Bidirectional power module packaging structure and packaging method

Abstract

A bidirectional power module packaging structure and packaging method are disclosed. In the structure, a first access terminal is configured as the input terminal of the IGBT power module, and a second access terminal is configured as the output terminal of the IGBT power module. A positive power module is disposed between the first access terminal and the second access terminal, and includes three stacked positive sub-modules connected to the first and second access terminals. A DBC substrate is disposed between the first and second access terminals. A first connection terminal is connected to the first access terminal at one end and to the DBC substrate at the other end. A second connection terminal is connected to the second access terminal at one end and to the DBC substrate at the other end. An IGBT chip is disposed on the upper surface of the DBC substrate, and an FRD chip is disposed on the upper surface of the DBC substrate and arranged at intervals from the IGBT chip. A bonding wire connects the FRD chip and the IGBT chip. A reverse power module is disposed between the first and second access terminals.

Description

Technical Field

[0001] This invention relates to the field of power electronics technology, and in particular to a bidirectional power module packaging structure and packaging method. Background Technology

[0002] With the rapid development of DC systems for urban rail transit, DC microgrids, and marine DC systems, and the continuous increase in power system capacity, the stable and safe operation of DC systems is of paramount importance. Short-circuit faults are the most frequent and damaging faults in DC transmission systems. When a short-circuit fault occurs in a low-voltage DC system, the rapidly rising short-circuit current, if not isolated, will cause very serious consequences. Therefore, low-voltage DC circuit breakers with fault isolation and isolation functions are indispensable for ensuring the safe and reliable operation of DC systems.

[0003] Hybrid DC circuit breakers employ parallel connections of mechanical and solid-state switch branches. The mechanical switch carries the load current under normal conditions with low conduction losses. The solid-state switch enables fault current interruption with rapid current breaking. Hybrid DC circuit breakers overcome the drawbacks of long breaking times in mechanical circuit breakers and high conduction losses in solid-state circuit breakers, making them a major research direction in DC circuit breaker development. The current-carrying capacity and commutation performance of the solid-state switch branches are key factors determining the performance of hybrid solid-state circuit breakers.

[0004] However, due to limitations in semiconductor materials and manufacturing processes, the capacity of a single power semiconductor device is limited. When used with solid-state switches, they often need to be connected in parallel to improve their turn-off capability. Directly connecting discrete devices in parallel results in problems such as large stray inductance, large size, and poor balance among parallel branches.

[0005] Therefore, a bidirectional IGBT module packaging structure is needed to improve the dynamic current sharing characteristics of parallel IGBT devices, thereby improving the turn-off capability of DC circuit breakers.

[0006] The information disclosed in the background section is only intended to enhance the understanding of the background of the present invention, and therefore may contain information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0007] To address the shortcomings or defects of the existing technology, a bidirectional power module packaging structure and packaging method are provided. Compared with the traditional single-layer IGBT module structure, the stacked structure realizes the spatial symmetry of multiple parallel IGBT chips, which is beneficial to improving the dynamic current sharing characteristics of IGBTs.

[0008] The objective of this invention is achieved through the following technical solutions.

[0009] A bidirectional power module packaging structure includes,

[0010] The first access terminal is configured as the input terminal of the IGBT power module.

[0011] The second access terminal is configured as the output terminal of the IGBT power module.

[0012] A positive power module, disposed between a first access terminal and a second access terminal, comprises three stacked positive sub-modules connected to the first and second access terminals. Each positive sub-module includes...

[0013] A DBC substrate is disposed between the first access terminal and the second access terminal.

[0014] The first connection terminal has one end connected to the first access terminal and the other end connected to the DBC substrate.

[0015] The second connection terminal has one end connected to the second access terminal and the other end connected to the DBC substrate.

[0016] The IGBT chip is disposed on the upper surface of the DBC substrate.

[0017] The FRD chip is disposed on the upper surface of the DBC substrate and arranged at intervals from the IGBT chips.

[0018] Bonding wires connect the FRD chip and the IGBT chip;

[0019] A reverse power module, located between a first access terminal and a second access terminal, comprises three stacked reverse sub-modules connected to the first and second access terminals. Each reverse sub-module includes...

[0020] The first connection terminal has one end connected to the first access terminal and the other end connected to the DBC substrate.

[0021] The second connection terminal has one end connected to the second access terminal and the other end connected to the DBC substrate.

[0022] The IGBT chip is disposed on the lower surface of the DBC substrate.

[0023] The FRD chip is disposed on the lower surface of the DBC substrate and arranged at intervals from the IGBT chips.

[0024] Bonding wires connect the FRD chip and the IGBT chip.

[0025] In the bidirectional power module packaging structure, the forward power module and the reverse power module are connected in reverse parallel through a first access terminal and a second access terminal.

[0026] In the bidirectional power module packaging structure, the first terminal is connected to the positive terminal of the IGBT chip, and the second terminal is connected to the negative terminal of the FRD chip.

[0027] In the bidirectional power module packaging structure, the bonding wire connects the negative terminal of the IGBT chip to the positive terminal of the FRD chip.

[0028] In the bidirectional power module packaging structure, the positive sub-module or the negative sub-module integrates two or more IGBT chips connected in parallel.

[0029] In the bidirectional power module packaging structure, the positive sub-module or the negative sub-module integrates two or more FRD chips connected in parallel.

[0030] In the bidirectional power module packaging structure described above, the DBC substrate is a horizontal plate that is kept level.

[0031] In the aforementioned bidirectional power module packaging structure, the IGBT chip and FRD chip are soldered to the copper layer of the DBC substrate using a low-temperature silver sintering or high-temperature welding process.

[0032] In the aforementioned bidirectional power module packaging structure, the bidirectional power module packaging structure is a symmetrical structure.

[0033] The method of using the bidirectional power module packaging structure includes the following steps.

[0034] Process the DBC substrate to divide the copper layer of the DBC substrate into multiple conductive areas with a set gap;

[0035] Arrange IGBT and FRD power chips, with multiple IGBT chips or FRD chips connected in parallel;

[0036] The chip is welded, and multiple IGBT chips and FRD chips are electrically connected to the DBC substrate through processes such as silver sintering or welding.

[0037] Weld the first connecting end and the second connecting end onto the DBC substrate;

[0038] Bonding involves connecting the first terminal to the positive terminal of the IGBT chip and the second terminal to the negative terminal of the FRD chip via bonding wires, thus connecting the negative terminal of the IGBT chip to the positive terminal of the FRD chip.

[0039] Compared with the prior art, the beneficial effects of this invention are as follows:

[0040] The stacked sub-modules of this invention enable symmetrical three-dimensional layout of IGBT chips and increase the balance of stray inductance in each branch of the IGBT, which is beneficial to improving the dynamic current sharing characteristics of the IGBT module. This invention is beneficial to improving the power density and breaking performance of IGBT modules used in DC circuit breakers.

[0041] The description provided is merely an overview of the technical solution of this invention. In order to make the technical means of this invention clearer and more understandable, so that those skilled in the art can implement it according to the contents of the specification, and to make the described and other objects, features and advantages of this invention more obvious and understandable, specific embodiments of this invention are described below. Attached Figure Description

[0042] Various other advantages and benefits of the present invention will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. It is obvious that the drawings described below are merely some embodiments of the invention, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. Furthermore, the same reference numerals denote the same parts throughout the drawings.

[0043] In the attached diagram:

[0044] Figure 1 This is a schematic diagram of the packaging structure of a bidirectional IGBT power module according to an embodiment of the present invention;

[0045] Figure 2 This is a schematic diagram of a bidirectional IGBT circuit topology according to an embodiment of the present invention;

[0046] Figure 3 This is a schematic diagram of the arrangement of sub-modules according to an embodiment of the present invention;

[0047] Figure 4 This is a schematic diagram of the structure of a forward power module according to an embodiment of the present invention.

[0048] The present invention will be further explained below with reference to the accompanying drawings and embodiments. Detailed Implementation

[0049] Specific embodiments of the invention will now be described in more detail with reference to the accompanying drawings. While specific embodiments of the invention are shown in the drawings, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the invention and to fully convey the scope of the invention to those skilled in the art.

[0050] It should be noted that certain terms are used in the specification and claims to refer to specific components. Those skilled in the art will understand that different terms may be used to refer to the same component. This specification and claims do not distinguish components based on differences in terminology, but rather on differences in function. The terms "comprising" or "including" used throughout the specification and claims are open-ended and should be interpreted as "comprising but not limited to." The following descriptions are preferred embodiments for carrying out the invention; however, these descriptions are for the purpose of understanding the general principles of the specification and are not intended to limit the scope of the invention. The scope of protection of this invention is determined by the appended claims.

[0051] To facilitate understanding of the embodiments of the present invention, the following will provide further explanation and description with reference to the accompanying drawings and several specific embodiments, and the accompanying drawings do not constitute a limitation on the embodiments of the present invention.

[0052] To better understand, such as Figures 1 to 4 As shown, a bidirectional power module packaging structure includes,

[0053] The first access terminal 113 is configured as the input terminal of the IGBT power module.

[0054] The second access terminal 114 is configured as the output terminal of the IGBT power module.

[0055] A positive power module 111, disposed between a first access terminal 113 and a second access terminal 114, includes three stacked positive sub-modules connected to the first access terminal 113 and the second access terminal 114. Each positive sub-module includes...

[0056] DBC substrate 104 is disposed between the first access terminal 113 and the second access terminal 114.

[0057] The first connection terminal 105 has one end connected to the first access terminal 113 and the other end connected to the DBC substrate 104.

[0058] The second connection terminal 106 has one end connected to the second access terminal 114 and the other end connected to the DBC substrate 104.

[0059] The IGBT chip 101 is disposed on the upper surface of the DBC substrate 104.

[0060] FRD chip 102 is disposed on the upper surface of the DBC substrate 104 and arranged at intervals from IGBT chip 101.

[0061] Bonding wire 103 connects the FRD chip 102 and the IGBT chip 101;

[0062] A reverse power module 112, disposed between a first access terminal 113 and a second access terminal 114, includes three stacked reverse sub-modules connected to the first access terminal 113 and the second access terminal 114. Each reverse sub-module includes...

[0063] The first connection terminal 105 has one end connected to the first access terminal 113 and the other end connected to the DBC substrate 104.

[0064] The second connection terminal 106 has one end connected to the second access terminal 114 and the other end connected to the DBC substrate 104.

[0065] The IGBT chip 101 is disposed on the lower surface of the DBC substrate 104.

[0066] FRD chip 102 is disposed on the lower surface of the DBC substrate 104 and arranged at intervals from IGBT chip 101.

[0067] Bonding wire 103 connects the FRD chip 102 and the IGBT chip 101.

[0068] In a preferred embodiment of the bidirectional power module packaging structure, the forward power module 111 and the reverse power module 112 are connected in reverse parallel via a first access terminal 113 and a second access terminal 114.

[0069] In a preferred embodiment of the bidirectional power module packaging structure, the first terminal is connected to the positive terminal of the IGBT chip 101, and the second terminal is connected to the negative terminal of the FRD chip 102.

[0070] In a preferred embodiment of the bidirectional power module packaging structure, the bonding wire 103 connects the negative terminal of the IGBT chip 101 to the positive terminal of the FRD chip 102.

[0071] In a preferred embodiment of the bidirectional power module packaging structure, the positive sub-module or the negative sub-module integrates two or more IGBT chips 101 connected in parallel.

[0072] In a preferred embodiment of the bidirectional power module packaging structure, the positive submodule or the negative submodule integrates two or more parallel FRD chips 102.

[0073] In a preferred embodiment of the bidirectional power module packaging structure, the DBC substrate 104 is a horizontal plate that remains level.

[0074] In a preferred embodiment of the bidirectional power module packaging structure, the IGBT chip 101 and the FRD chip 102 are soldered to the copper layer of the DBC substrate 104 by low-temperature silver sintering or high-temperature welding processes.

[0075] In a preferred embodiment of the bidirectional power module packaging structure, the bidirectional power module packaging structure is a symmetrical structure.

[0076] The method of using the bidirectional power module packaging structure includes the following steps.

[0077] Process the DBC substrate 104 to divide the copper layer of the DBC substrate 104 into multiple conductive regions according to a set gap;

[0078] Arrange IGBT and FRD power chips, with multiple IGBT chips 101 or FRD chips 102 connected in parallel;

[0079] The chips are welded, and multiple IGBT chips 101 and FRD chips 102 are electrically connected to the DBC substrate 104 through processes such as silver sintering or welding.

[0080] Solder the first connecting end 105 and the second connecting end 106 to the DBC substrate 104.

[0081] Bonding is performed by connecting the first terminal to the positive terminal of the IGBT chip 101 and the second terminal to the negative terminal of the FRD chip 102 via bonding wire 103, thereby connecting the negative terminal of the IGBT chip 101 to the positive terminal of the FRD chip 102.

[0082] In one embodiment, both the first access terminal 113 and the second access terminal 114 include an E-type structure for connecting the positive power module 111 or the negative power module and an access board for connecting the E-type structure, wherein the access board is provided with through holes.

[0083] In one embodiment, the number of sub-modules of the bidirectional IGBT power module can be adjusted according to the number of IGBTs and FRD chips 102 connected in parallel to achieve a better symmetry effect.

[0084] In one embodiment, when the bidirectional IGBT power module is turned on, bidirectional current can flow through the power module; when the IGBT is turned off, bidirectional current cannot flow through the module.

[0085] Figure 1 This is a schematic diagram of the packaging structure of a bidirectional IGBT power module according to an embodiment of the present invention. The bidirectional power module packaging structure includes:

[0086] The first access terminal 113 is configured as the input terminal of the IGBT power module.

[0087] The second access terminal 114 is configured as the output terminal of the IGBT power module.

[0088] In some embodiments of this application, the forward power module 111 contains three stacked sub-modules, which are connected through a first access terminal 113 and a second access terminal 114.

[0089] The reverse power module 112 has the same composition and structure as the forward power module 111.

[0090] In some embodiments of this application, the forward power module and the reverse power module are connected in reverse parallel through a first access terminal and a second access terminal.

[0091] In some embodiments of this application, the submodule includes a first connection terminal 105, a second connection terminal 106, a DBC substrate 104, an IGBT chip 101, an FRD chip 102, and a bonding wire 103.

[0092] In some embodiments of this application, the IGBT chip and the FRD chip are soldered to the copper layer of the DBC substrate by low-temperature silver sintering or high-temperature welding processes.

[0093] In some embodiments of this application, the first terminal is connected to the positive terminal of the IGBT chip, and the second terminal is connected to the negative terminal of the FRD chip.

[0094] In some embodiments of this application, the bonding wire connects the negative terminal of the IGBT chip to the positive terminal of the FRD chip.

[0095] Figure 2 This is a schematic diagram of the sub-module circuit topology in a bidirectional IGBT power module according to an embodiment of the present invention.

[0096] Figure 3 This is a schematic diagram of the arrangement of sub-modules according to an embodiment of the present invention.

[0097] In one embodiment, two IGBT chips 101 and two FRD chips 102 are symmetrically arranged on a DBC substrate 104. A first connection terminal 105 is configured as a positive terminal soldered to the DBC substrate, and a second connection terminal 106 is configured as a negative terminal soldered to the DBC substrate. The negative terminals of the IGBT chips and the positive terminals of the FRD chips are electrically connected via bonding wires 103.

[0098] Figure 4 This is a schematic diagram of the structure of a forward power module according to an embodiment of the present invention, which includes three stacked sub-modules.

[0099] In this invention, the encapsulation method of a submodule in one embodiment includes the following steps:

[0100] The DBC substrate is processed so that the copper layer of the DBC substrate is divided into multiple conductive areas with a set gap.

[0101] Arrange IGBT and FRD power chips. Multiple IGBTs or FRDs are connected in parallel.

[0102] Chip welding. A reliable electrical connection is achieved between the multi-power chip and the DBC substrate in one embodiment layout using processes such as silver sintering or welding.

[0103] The power terminals and drive terminals are soldered. In one embodiment, the first connection terminal 105 and the second connection terminal 106 are soldered to a specific area on the DBC substrate, and the drive terminal 107 is soldered in the same way.

[0104] Bonding. The drive terminals are connected to the power chip electrodes using bonding wires, and the negative terminal of the IGBT chip is connected to the positive terminal of the FRD chip.

[0105] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0106] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A bidirectional power module package structure, characterized by, It includes, The first access terminal is configured as the input terminal of the IGBT power module. The second access terminal is configured as the output terminal of the IGBT power module. A positive power module, disposed between a first access terminal and a second access terminal, comprises three stacked positive sub-modules connected to the first and second access terminals. Each positive sub-module includes... The DBC substrate is disposed between the first access terminal and the second access terminal. The first connection terminal has one end connected to the first access terminal and the other end connected to the DBC substrate. The second connection terminal has one end connected to the second access terminal and the other end connected to the DBC substrate. The IGBT chip is disposed on the upper surface of the DBC substrate. The FRD chip is disposed on the upper surface of the DBC substrate and arranged at intervals from the IGBT chips. Bonding wires connect the FRD chip and the IGBT chip; A reverse power module, located between a first access terminal and a second access terminal, comprises three stacked reverse sub-modules connected to the first and second access terminals. Each reverse sub-module includes... The first connection terminal has one end connected to the first access terminal and the other end connected to the DBC substrate. The second connection terminal has one end connected to the second access terminal and the other end connected to the DBC substrate. The IGBT chip is disposed on the lower surface of the DBC substrate. The FRD chip is disposed on the lower surface of the DBC substrate and arranged at intervals from the IGBT chips. A bonding wire connects the FRD chip and the IGBT chip. The IGBT chip and the FRD chip are soldered to the copper layer of the DBC substrate using a low-temperature silver sintering or high-temperature welding process. Both the first and second access terminals include an E-type structure for connecting the positive or negative power module and an access board for connecting the E-type structure. The access board has through holes. The positive and negative power modules are connected in reverse parallel through the first and second access terminals. When the IGBT power module is turned on, bidirectional current can flow through the power module; when the IGBT power module is turned off, bidirectional current cannot flow through the IGBT power module.

2. The bidirectional power module package structure of claim 1, wherein, The first connection terminal is connected to the positive terminal of the IGBT chip, and the second connection terminal is connected to the negative terminal of the FRD chip.

3. The bidirectional power module package structure of claim 1, wherein, The bonding wire connects the negative terminal of the IGBT chip to the positive terminal of the FRD chip.

4. The bidirectional power module package structure of claim 1, wherein, The positive or negative submodule integrates two or more IGBT chips connected in parallel.

5. The bidirectional power module package structure of claim 1, wherein, The positive or negative submodule integrates two or more FRD chips connected in parallel.

6. The bidirectional power module package structure of claim 1, wherein, The DBC substrate is a horizontal plate that is kept level.

7. The bidirectional power module package structure of claim 1, wherein, The bidirectional power module has a symmetrical packaging structure.

8. A method of using a bidirectional power module package structure according to any one of claims 1-7, wherein, It includes the following steps, Process the DBC substrate to divide the copper layer of the DBC substrate into multiple conductive areas with a set gap; Arrange IGBT and FRD power chips, with multiple IGBT chips or FRD chips connected in parallel; The chip is welded, and multiple IGBT chips and FRD chips are electrically connected to the DBC substrate through silver sintering or welding processes. Weld the first connecting end and the second connecting end onto the DBC substrate; Bonding involves connecting the first terminal to the positive terminal of the IGBT chip and the second terminal to the negative terminal of the FRD chip via bonding wires, thus connecting the negative terminal of the IGBT chip to the positive terminal of the FRD chip.

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