Passivated contact solar cell and photovoltaic module

CN119133265AActive Publication Date: 2024-12-13TONGWEI SOLAR ENERGY (CHENGDU) CO LID

Patent Information

Application Number
CN202411640214.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-18
Publication Date
2024-12-13
Estimated Expiration
2044-11-18

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Abstract

The invention provides a passivation contact solar cell and a photovoltaic module, the passivation contact solar cell comprises a silicon substrate, and the backlight surface of the silicon substrate comprises a first area and a third area which are arranged at an interval; in the first region, the backlight surface of the silicon substrate is sequentially provided with a dielectric layer, a first doping layer and a first passivation layer, and the dielectric layer and the first doping layer form a passivation contact structure in the first region; in the third area, the backlight surface of the silicon substrate is provided with a first passivation layer; the second area is arranged between the first area and the third area, the second area is provided with the step structure, the number of steps in the step structure is at least two, the optical loss of the passivation contact solar cell can be reduced, and therefore the photoelectric conversion efficiency of the solar cell is improved.
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Citation Information

Patent Citations

  • Manufacturing method for photoelectric sensor with receiving active region on a inclined surface

    CN101383388A

  • Passivation contact structure and solar cell

    CN109841693A

  • Double-sided passivation contact P-type high-efficiency battery and preparation method thereof

    CN110137274A

  • Manufacturing method of P-type passivation contact solar cell

    CN112397613A

  • Solar cell and preparation method thereof, and photovoltaic module

    CN116722051A

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