Manufacturing method of metal circuit on surface of glass substrate, glass substrate with metal circuit and electronic equipment

Abstract

The invention relates to a manufacturing method of a metal circuit on the surface of a glass substrate, the glass substrate with the metal circuit and electronic equipment. The manufacturing method comprises the following steps: obtaining a glass substrate with a through hole, wherein the inner diameter of the through hole is greater than 50 [mu] m; carrying out full-plate electroplating on the glass substrate, forming a metal layer on the surface of the glass substrate, and simultaneously filling the through hole with metal; the metal layer on the surface of the glass substrate is thinned by adopting a sulfuric acid-hydrogen peroxide etching agent, so that the thickness of the metal layer is 10-25 microns; and carrying out patterning treatment on the thinned metal layer, and forming a metal circuit on the surface of the glass substrate. According to the manufacturing method of the metal circuit on the surface of the glass substrate, the metal circuit with the thickness of 10-25 microns and good thickness uniformity can be manufactured.

Description

Technical Field

[0001] The present application relates to the field of through-glass vias, and in particular to a method for manufacturing a metal circuit on the surface of a glass substrate, a glass substrate having the metal circuit, and an electronic device. Background Art

[0002] With the continuous research and development of through-glass via (TGV) technology, the process of making circuits on glass substrates with through holes has gradually matured. However, for glass substrates with large-aperture through holes (aperture greater than 50μm), the thickness of the metal circuit made by the traditional method is usually limited by the size of the inner diameter of the through hole, which is more than half of the inner diameter of the through hole. For example, the thickness of the metal circuit is usually greater than 25μm. There is another traditional method that is not limited by the size of the inner diameter of the through hole, but the metal circuit is too thin, such as less than 10μm, and its application is limited. However, the current required metal circuit thickness is usually 10μm~25μm. Therefore, for glass substrates with large-aperture through holes, how to make the metal circuit thickness between 10μm~25μm and ensure good thickness uniformity is one of the problems that need to be solved in this field. Summary of the invention

[0003] Based on this, some embodiments of the present application provide a method for manufacturing a metal circuit on the surface of a glass substrate, which can manufacture a metal circuit with a thickness of 10 μm to 25 μm and good thickness uniformity.

[0004] In addition, some other embodiments of the present application also provide a glass substrate and an electronic device having a metal circuit.

[0005] A method for manufacturing a metal circuit on the surface of a glass substrate comprises the following steps:

[0006] Obtaining a glass substrate having a through hole, wherein the inner diameter of the through hole is greater than 50 μm;

[0007] Performing full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate and filling the through holes with metal;

[0008] Using sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate so that the thickness of the metal layer is 10 μm to 25 μm;

[0009] The thinned metal layer is patterned to form a metal circuit on the surface of the glass substrate.

[0010] In some embodiments, the sulfuric acid-hydrogen peroxide etchant includes, by mass percentage, 3%-5% sulfuric acid, 2%-4% hydrogen peroxide, 8%-12% stabilizer, 3%-5% etching inhibitor and water.

[0011] In some embodiments, in the step of electroplating the entire glass substrate, the electroplating solution comprises: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L; and / or,

[0012] In the step of performing full-plate electroplating on the glass substrate, the thickness of the formed metal layer is 30 μm to 50 μm.

[0013] In some of the embodiments, before the step of performing full-plate electroplating on the glass substrate, the step further includes: forming a seed layer on the surface of the glass substrate and the inner wall of the through hole.

[0014] In some embodiments, the thickness of the seed layer is greater than 1 μm;

[0015] Optionally, the seed layer has a thickness of 1 μm to 3 μm;

[0016] Optionally, the material of the seed layer includes copper.

[0017] In some embodiments, the step of patterning the thinned metal layer to form a metal circuit on the surface of the glass substrate includes:

[0018] According to a preset pattern, a part of the surface of the thinned metal layer is covered with an anti-corrosion dry film;

[0019] Etching the thinned metal layer to remove the portion of the metal layer not covered by the anti-etching dry film;

[0020] The anti-etching dry film is removed to form a metal circuit on the surface of the glass substrate.

[0021] In some embodiments, the glass substrate has a thickness of 0.2 mm to 0.6 mm.

[0022] In some embodiments, the step of obtaining a glass substrate having a through hole includes: performing laser modification and hydrofluoric acid etching on the glass substrate to form a through hole having an inner diameter greater than 50 μm on the glass substrate.

[0023] A glass substrate with metal circuits is manufactured by the above manufacturing method.

[0024] An electronic device comprises the above-mentioned glass substrate with metal circuits.

[0025] The method for making the metal circuit on the surface of the glass substrate comprises the steps of performing full-plate electroplating on a glass substrate having a through-hole inner diameter greater than 50 μm, forming a metal layer on the surface of the glass substrate, and filling the through-hole with metal. The full-plate electroplating method is conducive to improving the thickness uniformity of the metal layer, but the thickness of the obtained metal layer is relatively thick. Therefore, the metal layer needs to be thinned. The metal layer on the surface of the glass substrate is thinned by using a sulfuric acid-hydrogen peroxide etchant. The sulfuric acid-hydrogen peroxide etchant has a high etching factor and can ensure the uniformity of the thickness of the metal layer after thinning while thinning the thickness to 10 μm~25 μm. Then, the thinned metal layer is patterned to form a metal circuit on the surface of the glass substrate. Therefore, the method for making the metal circuit on the surface of the glass substrate combines the full-plate electroplating method with the chemical etching method. By selecting a suitable etchant, a metal circuit with a thickness of 10 μm~25 μm can be formed on the surface of a glass substrate with a large-aperture through-hole, while improving the thickness uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 A process flow chart of a method for manufacturing a metal circuit on a surface of a glass substrate according to some embodiments of the present application;

[0028] Figure 2 is a schematic diagram of a metal layer after being etched using a conventional chemical etchant;

[0029] Figure 3 A schematic diagram of a metal layer after being etched using a sulfuric acid-hydrogen peroxide etchant according to some embodiments of the present application;

[0030] Figure 4 A process flow chart of a method for manufacturing a metal circuit on a surface of a glass substrate according to some other embodiments of the present application;

[0031] Figure 5 for Figure 4 A schematic diagram of the process flow diagram shown. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present application, the present application will be described more comprehensively below in conjunction with the specific embodiments. The preferred embodiments of the present application are provided in the specific embodiments. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0034] Unless otherwise specified or there is a contradiction, the terms and phrases used in this application have the following meanings:

[0035] In this application, "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0036] In the description of the present application, “plurality” means at least two, for example, two, three, etc., unless otherwise clearly and specifically defined.

[0037] In this application, "one or several" refers to any one, any two or more of the listed items. Among them, "several" refers to any two or more of the listed items.

[0038] In this application, the percentage concentration involved, unless otherwise specified, refers to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of the component.

[0039] The words "optionally" and the like in this application refer to embodiments of the present application that may provide certain beneficial effects in certain cases. However, other embodiments may also be optional under the same or other circumstances. In addition, the statement of one or more optional embodiments does not imply that other embodiments are unavailable, nor is it intended to exclude other embodiments from the scope of this application.

[0040] When a numerical range is disclosed in this application, the above range is considered to be continuous and includes the minimum and maximum values ​​of the range, as well as every value between such minimum and maximum values. Further, when a range refers to an integer, every integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be combined. In other words, unless otherwise indicated, all ranges disclosed in this application should be understood to include any and all subranges included therein.

[0041] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0042] The terms "including" and "having" and any variations thereof in the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units that are not listed, or may optionally include other steps or components that are inherent to these processes, methods, products, or devices.

[0043] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0044] In the present application, “above” and “below” both include the number itself. For example, a thickness of 1 μm or more means a thickness greater than or equal to 1 μm.

[0045] For glass substrates with large apertures, the traditional method for making metal circuits includes: first filling the through hole with metal, and then sputtering the metal circuit. The thickness uniformity of the metal circuit made by this method is good, above 95%, but the thickness is thinner and less than 10μm, and the metal filling depression will be relatively large. Another method is: first attach a dry film to the surface of the glass substrate, perform electroplating to fill the holes and make the circuit. The copper thickness of the independent area of ​​the dry film electroplating is large, and the uniformity of the whole board is between 85% and 90%, and finally remove the dry film. The thickness of the metal circuit obtained by the above method will be subject to the size of the inner diameter of the through hole, which is usually more than half of the inner diameter, that is, the thickness of the metal circuit is usually greater than 25μm. However, the current demand for metal circuits is usually 10μm~25μm. For metal circuits with a thickness in the range of 10μm~25μm, how to improve the thickness uniformity is one of the problems to be solved in this field.

[0046] Based on this, the first aspect of the present application provides a method for manufacturing a metal circuit on a glass substrate surface. Figure 1 , including the following steps:

[0047] Step S110: obtaining a glass substrate having a through hole, wherein the inner diameter of the through hole is greater than 50 μm.

[0048] It is understood that obtaining a through hole with an inner diameter greater than 50 μm can be a common method in the art. Specifically, step S110 includes: laser denaturing the glass substrate, and then etching with hydrofluoric acid to obtain a through hole with an inner diameter greater than 50 μm. The specific laser denaturation and hydrofluoric acid etching methods can be commonly used in the art and are not particularly limited here.

[0049] In some embodiments, ultrasonic waves are also applied during the hydrofluoric acid etching process. The above arrangement is helpful to improve the uniformity of the pore size.

[0050] Through holes with an inner diameter greater than 50μm can accommodate larger chips.

[0051] In some embodiments, the thickness of the glass substrate is 0.2 mm to 0.6 mm. For example, the thickness of the glass substrate may be, but is not limited to, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, or a range consisting of any two of these values.

[0052] In some embodiments, the glass substrate has a size less than or equal to 515 mm×510 mm.

[0053] Step S120: performing full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate and fill the through holes with metal.

[0054] It can be understood that filling the through-hole with metal means that during the electroplating process, the inside of the through-hole is filled with metal so that conduction is achieved between the upper and lower surfaces of the glass substrate.

[0055] In some embodiments, the material of the metal layer includes copper.

[0056] In some embodiments, the thickness of the metal layer is 30 μm to 50 μm.

[0057] In some embodiments, in the step of electroplating the entire glass substrate, the electroplating solution includes: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L. It can be understood that the specific brightener and wetting agent can be commonly used in the art and are not particularly limited here.

[0058] For through holes with an inner diameter greater than 50μm, compared with through holes with smaller apertures, the electroplating uniformity is slightly worse during the subsequent electroplating process, and the thickness is easily affected by the aperture. Therefore, in some embodiments of the present application, a full-board electroplating method is adopted. Compared with the traditional graphic electroplating method, the thickness uniformity of the formed metal layer is better, but the thickness is usually thicker. Therefore, thinning treatment is required to obtain a metal circuit with a thickness of 10μm~25μm.

[0059] In some embodiments, before step S120, a seed layer is formed on the surface of the glass substrate and the inner wall of the through hole. The seed layer is formed on the surface of the glass substrate and the inner wall of the through hole to facilitate subsequent electroplating in the hole, so that the hole is metallized (copper in the hole can be conductive) to achieve interlayer conduction.

[0060] Specifically, the seed layer is formed by physical vapor deposition (PVD), for example, by sputtering.

[0061] In some embodiments, the thickness of the seed layer is greater than 1 μm. Specifically, the thickness of the seed layer is 1 μm to 3 μm.

[0062] In some embodiments, the material of the seed layer includes copper.

[0063] Step S130: using sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate to make the thickness of the metal layer 10 μm-25 μm.

[0064] Sulfuric acid-hydrogen peroxide etchant has a high etching factor, which can reduce the thickness while ensuring the uniformity of the metal layer thickness after thinning. Sulfuric acid-hydrogen peroxide etchant can be used to dissolve copper, and the in-plane deviation of the etching amount is small, which can form a flat metal surface, which is conducive to improving the etching factor and achieving circuit refinement and thickness uniformity.

[0065] See also Figure 2 , the etching factor of the traditional etchant is low, and the etched line has a certain angle, while Figure 3 In the present invention, the above-mentioned sulfuric acid hydrogen peroxide etchant has a high etching factor, has a leveling effect in the horizontal direction, has a slow suppression effect in the vertical direction, and the circuit after etching is a right angle.

[0066] Specifically, the sulfuric acid-hydrogen peroxide etchant includes sulfuric acid, hydrogen peroxide, a stabilizer and an etching inhibitor. The stabilizer can inhibit the decomposition of hydrogen peroxide, and the etching inhibitor can inhibit the etching in the vertical direction and accelerate the etching in the horizontal direction. In some embodiments, the sulfuric acid-hydrogen peroxide etchant includes, by mass percentage: 3% to 5% sulfuric acid, 2% to 4% hydrogen peroxide, 8% to 12% stabilizer, 3% to 5% etching inhibitor and water. It can be understood that the specific stabilizer and etching inhibitor can be commonly used in the art and are not particularly limited here.

[0067] The metal layer is thinned by sulfuric acid-hydrogen peroxide etchant. Compared with the mechanical planarization method, on the one hand, it is less expensive, and on the other hand, it can reduce the thickness to 10μm~25μm while ensuring the uniformity of the thickness.

[0068] Step S140: patterning the thinned metal layer to form metal circuits on the surface of the glass substrate.

[0069] In some embodiments, step S140 includes:

[0070] According to a preset pattern, a part of the surface of the thinned metal layer is covered with an anti-corrosion dry film;

[0071] Etching the thinned metal layer to remove the portion of the metal layer not covered by the anti-etching dry film;

[0072] The anti-etching dry film is removed to form a metal circuit on the surface of the glass substrate.

[0073] It can be understood that the preset pattern refers to the pattern of the metal circuit to be obtained.

[0074] In some embodiments, the step of etching the thinned metal layer uses wet etching, and specifically, the step of wet etching uses cupric chloride acid etching.

[0075] In some of the embodiments, see 4, the method for manufacturing a metal circuit on the surface of a glass substrate comprises the following steps:

[0076] Step S210: performing laser modification on the glass substrate.

[0077] Step S220: etching the laser-modified glass substrate with hydrofluoric acid to obtain a glass substrate having a through hole with an inner diameter greater than 50 μm.

[0078] Step S230: forming a seed layer on the surface of the glass substrate and the inner wall of the through hole.

[0079] Step S240: performing full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate and fill the through holes with metal.

[0080] Step S250: using sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate to make the thickness of the metal layer 10 μm-25 μm.

[0081] Step S260: covering a portion of the surface of the thinned metal layer with an anti-etching dry film according to a preset pattern.

[0082] Step S270: etching the thinned metal layer to remove the portion of the metal layer not covered by the anti-etching dry film.

[0083] Step S280: removing the anti-etching dry film and forming a metal circuit on the surface of the glass substrate.

[0084] The specific process of each step is the same as above and will not be repeated here.

[0085] Please also read Figure 5 , Figure 5 for Figure 4 A specific schematic diagram of the process flow diagram shown in FIG. Figure 5 In the process, the glass substrate 310 is firstly laser-modified in step S210, and then the laser-modified glass substrate 310 is etched in step S220 to form a through hole 312. In step S230, the seed layer 320 is sputtered on the surface of the glass substrate 310 and the inner wall of the through hole. In step S240, the glass substrate 310 is fully electroplated to form a metal layer 330. In step S250, the metal layer 330 is thinned. In step S260, the surface of the metal layer 330 is partially covered with an anti-etching dry film 340, and in step S270, the metal layer 330 is etched to remove the metal layer not covered by the anti-etching dry film 340. In step S280, the anti-etching dry film 340 is removed to form a metal circuit on the surface of the glass substrate 310.

[0086] The preparation method of the metal circuit on the surface of the glass substrate comprises the following steps: full-plate electroplating a glass substrate having a through-hole inner diameter greater than 50 μm, forming a metal layer on the surface of the glass substrate, and filling the through-hole with metal. The full-plate electroplating method is conducive to improving the thickness uniformity of the metal layer, but the thickness of the obtained metal layer is relatively thick. Therefore, the metal layer needs to be thinned, and the metal layer on the surface of the glass substrate is thinned by sulfuric acid-hydrogen peroxide etchant, so that the metal layer is thinned to a thickness of 10 μm to 25 μm; sulfuric acid-hydrogen peroxide etchant has a high etching factor, and can ensure the uniformity of the thickness of the metal layer after thinning while thinning the thickness. Then, the thinned metal layer is patterned to form a metal circuit on the surface of the glass substrate. Therefore, the preparation method of the metal circuit on the surface of the glass substrate combines the full-plate electroplating method with the chemical etching method. By selecting a suitable etchant, a metal circuit with a thickness of 10 μm to 25 μm can be formed on the surface of the glass substrate with a large-aperture through-hole, while improving the thickness uniformity.

[0087] Furthermore, the thickness uniformity of the metal circuit manufactured by the above-mentioned method for manufacturing the metal circuit on the surface of the glass substrate is ≥95%.

[0088] Figure 1 and Figure 4 1 and 2 are schematic diagrams of a method for manufacturing a metal circuit on a glass substrate according to an embodiment of the present invention. It should be understood that although Figure 1 and Figure 4 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily performed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and they can be performed in other orders. Figure 1 and Figure 4 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The order of execution is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of other sub-steps or stages.

[0089] A second aspect of the present application provides a glass substrate with a metal circuit, which is manufactured by the above-mentioned manufacturing method.

[0090] The glass substrate with metal circuits has a metal circuit thickness of 10 μm to 25 μm and good thickness uniformity, and can be used in displays, packaging carriers, receiving plates, and the like.

[0091] A third aspect of the present application provides an electronic device, comprising the above-mentioned glass substrate with metal circuits.

[0092] Specifically, the electronic device can be, but is not limited to, mobile phones, computers, televisions, naked-eye 3D, head-mounted displays VR, MR, cinema screens, creative displays, car-mounted, public displays and other field equipment.

[0093] In order to make the purpose and advantages of the present application clearer, the following is a further detailed description of the method for making the metal circuit on the surface of the glass substrate of the present application and its effects in combination with specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and shall not be used to limit the present application. The following embodiments do not include other components except for unavoidable impurities unless otherwise specified. The drugs and instruments used in the embodiments are conventionally selected in the art unless otherwise specified. The experimental methods for which specific conditions are not specified in the embodiments are implemented according to conventional conditions, such as the conditions described in the literature and books or the methods recommended by the manufacturer.

[0094] Example 1

[0095] This embodiment provides a method for manufacturing a metal circuit on the surface of a glass substrate, comprising the following steps:

[0096] (1) A glass substrate is obtained, wherein the glass substrate has a thickness of 0.4 mm and a size of 515 mm×510 mm, and the glass substrate is laser modified.

[0097] (2) The laser-modified glass substrate was etched with hydrofluoric acid to obtain a glass substrate having a through hole with an inner diameter of 100 μm and an outer diameter of 120 μm.

[0098] (3) A copper seed layer with a thickness of 3 μm is formed on the surface of the glass substrate and the inner wall of the through hole by physical sputtering.

[0099] (4) Obtaining an electroplating solution, the electroplating solution includes: copper sulfate with a concentration of 230 g / L, sulfuric acid with a concentration of 100 g / L, hydrochloric acid with a concentration of 50 ppm, a brightener with a concentration of 1 mL / L, and a wetting agent with a concentration of 10 mL / L, and performing full-board electroplating on the glass substrate to form a metal layer on the surface of the glass substrate and fill the through holes with metal.

[0100] (5) A sulfuric acid-hydrogen peroxide etchant is used to thin the metal layer on the surface of the glass substrate, wherein the sulfuric acid-hydrogen peroxide etchant comprises, by mass percentage, 4% sulfuric acid, 3% hydrogen peroxide, 10% stabilizer, 4% etching inhibitor and the remainder water.

[0101] (6) According to the preset pattern, a portion of the surface of the thinned metal layer is covered with an anti-corrosion dry film.

[0102] (7) Etching the thinned metal layer. In the etching step, copper chloride acid etching is used to remove the metal layer that is not covered by the anti-etching dry film.

[0103] (8) The anti-etching dry film is removed to form a metal circuit on the surface of the glass substrate.

[0104] Comparative Example 1

[0105] Comparative Example 1 provides a method for manufacturing a metal circuit on the surface of a glass substrate, comprising the following steps:

[0106] (1) A glass substrate is obtained, wherein the glass substrate has a thickness of 0.4 mm and a size of 515 mm×510 mm, and the glass substrate is laser modified.

[0107] (2) The laser-modified glass substrate was etched with hydrofluoric acid to obtain a glass substrate having a through hole with an inner diameter of 100 μm and an outer diameter of 120 μm.

[0108] (3) A copper seed layer with a thickness of 3 μm is formed on the surface of the glass substrate and the inner wall of the through hole by physical sputtering.

[0109] (4) According to a preset pattern, a dry film is attached to a portion of the surface of the glass substrate to obtain an electroplating solution, wherein the electroplating solution includes: copper sulfate with a concentration of 230 g / L, sulfuric acid with a concentration of 100 g / L, hydrochloric acid with a concentration of 50 ppm, brightener with a concentration of 1 mL / L, and wetting agent with a concentration of 10 mL / L. The portion of the glass substrate without the dry film is subjected to pattern electroplating to form a metal layer on the surface of the glass substrate and fill the through hole with metal.

[0110] (5) Remove the dry film and form a metal circuit on the surface of the glass substrate.

[0111] Comparative Example 2

[0112] Comparative Example 2 provides a method for manufacturing a metal circuit on the surface of a glass substrate. The preparation steps are similar to those of Example 1, except that the etchant used in step (5) is different. In Comparative Example 2, the composition of the etchant used in step (5) is as follows: 200 g / L of cupric chloride, 100 g / L of hydrochloric acid, 100 g / L of sodium chloride, and 150 g / L of ammonium chloride.

[0113] The thickness and thickness uniformity of the metal lines made in the above embodiments and comparative examples were tested to obtain the data shown in Tables 1 and 2. The following data were measured using the nine-point method. The thickness unit is μm. In Table 1, max represents the maximum thickness, min represents the minimum thickness, avg represents the average thickness, and COV represents the coefficient of variation, which is calculated by the following formula: COV = (max-min) / (2×avg) × 100%. Uniformity is represented by 100%-COV.

[0114] Table 1

[0115]

[0116] Table 2

[0117]

[0118] It can be seen from Table 1 and Table 2 that the metal layer produced by the method of Example 1 through full-plate electroplating is thicker and has good uniformity. After chemical thinning, the thickness of the metal layer after thinning is between 10 μm and 25 μm, and the thickness uniformity is good.

[0119] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0120] The above-described embodiments only express several implementation methods of the present application, which is convenient for understanding the technical solution of the present application in detail, but it cannot be understood as limiting the scope of protection of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the scope of protection of the present application. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided in the present application are all within the scope of protection of the claims attached to the present application. Therefore, the scope of protection of the patent of this application shall be based on the contents of the attached claims, and the description and drawings can be used to explain the contents of the claims.

Claims

1. A method for manufacturing a metal circuit on a glass substrate surface, characterized in that: The steps include: Obtaining a glass substrate having a through hole, wherein the inner diameter of the through hole is greater than 50 μm; Performing full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate and filling the through holes with metal; Using sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate so that the thickness of the metal layer is 10 μm to 25 μm; The thinned metal layer is patterned to form a metal circuit on the surface of the glass substrate.

2. The method for manufacturing a metal circuit on a glass substrate surface according to claim 1, characterized in that: Calculated by mass percentage, the sulfuric acid-hydrogen peroxide etchant includes: 3%-5% sulfuric acid, 2%-4% hydrogen peroxide, 8%-12% stabilizer, 3%-5% etching inhibitor and water.

3. The method for manufacturing a metal circuit on a glass substrate surface according to claim 1, characterized in that: In the step of electroplating the entire glass substrate, the electroplating solution comprises: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L; and / or, In the step of performing full-plate electroplating on the glass substrate, the thickness of the formed metal layer is 30 μm to 50 μm.

4. The method for manufacturing a metal circuit on a glass substrate surface according to claim 1 or 3, characterized in that: Before the step of performing full-plate electroplating on the glass substrate, the method further includes: forming a seed layer on the surface of the glass substrate and the inner wall of the through hole.

5. The method for manufacturing a metal circuit on a glass substrate surface according to claim 4, characterized in that: The thickness of the seed layer is greater than 1 μm; Optionally, the seed layer has a thickness of 1 μm to 3 μm; Optionally, the material of the seed layer includes copper.

6. The method for manufacturing a metal circuit on a glass substrate surface according to claim 1, characterized in that: The step of patterning the thinned metal layer to form a metal circuit on the surface of the glass substrate includes: According to a preset pattern, a part of the surface of the thinned metal layer is covered with an anti-corrosion dry film; Etching the thinned metal layer to remove the portion of the metal layer not covered by the anti-etching dry film; The anti-etching dry film is removed to form a metal circuit on the surface of the glass substrate.

7. The method for manufacturing a metal circuit on the surface of a glass substrate according to any one of claims 1 to 3 and 5 to 6, characterized in that: The thickness of the glass substrate is 0.2 mm to 0.6 mm.

8. The method for manufacturing a metal circuit on the surface of a glass substrate according to claims 1 to 3 and 5 to 6, characterized in that: The step of obtaining a glass substrate with a through hole includes: performing laser denaturation and hydrofluoric acid etching on the glass substrate to form a through hole with an inner diameter greater than 50 μm on the glass substrate.

9. A glass substrate with a metal circuit, characterized in that: It is produced by the production method according to any one of claims 1 to 8.

10. An electronic device, characterized in that: The invention comprises the glass substrate with metal circuits as claimed in claim 9.

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