Method for manufacturing metal line on surface of glass substrate, glass substrate with metal line, and electronic device

Abstract

The application relates to a glass substrate surface metal line manufacturing method, a glass substrate with a metal line and an electronic device. The manufacturing method comprises the following steps: obtaining a glass substrate with a through hole, the inner diameter of the through hole being greater than 50 mu m; performing full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate, and meanwhile making the metal fill the through hole; using a sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate, so that the thickness of the metal layer is 10 mu m to 25 mu m; and performing patterning treatment on the thinned metal layer to form a metal line on the surface of the glass substrate. The glass substrate surface metal line manufacturing method can manufacture a metal line with a thickness of 10 mu m to 25 mu m and good thickness uniformity.

Description

Technical Field

[0001] This application relates to the field of glass through-holes, and in particular to a method for fabricating metal lines on the surface of a glass substrate, a glass substrate having metal lines, and an electronic device. Background Technology

[0002] With the continuous research and development of through-glass via (TGV) technology, the process of fabricating circuits on glass substrates with through-holes has gradually matured. However, for glass substrates with large-diameter (greater than 50 μm) through-holes, the thickness of the metal circuits fabricated using traditional methods is usually limited by the inner diameter of the through-hole, often exceeding half of it; for example, the thickness of the metal circuit is typically greater than 25 μm. Another traditional method, while not limited by the inner diameter of the through-hole, results in excessively thin metal circuits, such as less than 10 μm, limiting its applications. Currently, the required metal circuit thickness is typically between 10 μm and 25 μm. Therefore, for glass substrates with large-diameter through-holes, how to fabricate metal circuits with a thickness of 10 μm to 25 μm while ensuring good thickness uniformity is one of the urgent problems to be solved in this field. Summary of the Invention

[0003] Based on this, some embodiments of this application provide a method for fabricating metal lines on the surface of a glass substrate, which can produce metal lines with a thickness of 10μm~25μm and good thickness uniformity.

[0004] In addition, other embodiments of this application also provide a glass substrate with metal lines and an electronic device.

[0005] A method for fabricating metal lines on the surface of a glass substrate includes the following steps:

[0006] A glass substrate with through holes is obtained, wherein the inner diameter of the through holes is greater than 50 μm;

[0007] The glass substrate is electroplated across the entire substrate to form a metal layer on the surface of the glass substrate, while simultaneously filling the through holes with the metal.

[0008] The metal layer on the surface of the glass substrate is thinned using a sulfuric acid-hydrogen peroxide etchant to achieve a thickness of 10 μm to 25 μm.

[0009] The thinned metal layer is patterned to form metal lines on the surface of the glass substrate.

[0010] In some embodiments, the sulfuric acid-hydrogen peroxide etchant comprises, by weight percentage: 3%~5% sulfuric acid, 2%~4% hydrogen peroxide, 8%~12% stabilizer, 3%~5% etching inhibitor, and water.

[0011] In some embodiments, the electroplating step of the glass substrate includes, in the electroplating solution: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L; and / or,

[0012] In the step of performing full-plate electroplating on the glass substrate, the thickness of the metal layer formed is 30μm~50μm.

[0013] In some embodiments, prior to the step of full-plate electroplating of the glass substrate, a seed layer is formed on the surface of the glass substrate and the inner wall of the through hole.

[0014] In some embodiments, the thickness of the seed layer is greater than 1 μm;

[0015] Optionally, the thickness of the seed layer is 1 μm to 3 μm;

[0016] Optionally, the seed layer may be made of copper.

[0017] In some embodiments, the step of patterning the thinned metal layer to form metal lines on the surface of the glass substrate includes:

[0018] According to the preset pattern, cover part of the thinned metal layer with an anti-corrosion dry film;

[0019] The thinned metal layer is etched to remove the portion of the metal layer not covered by the resist dry film;

[0020] Remove the resist dry film and form metal lines on the surface of the glass substrate.

[0021] In some embodiments, the thickness of the glass substrate is 0.2 mm to 0.6 mm.

[0022] In some embodiments, the step of obtaining a glass substrate with through holes includes: laser modification and hydrofluoric acid etching of the glass substrate to form through holes with an inner diameter greater than 50 μm on the glass substrate.

[0023] A glass substrate with metal circuitry is manufactured using the method described above.

[0024] An electronic device includes the glass substrate with metal lines described above.

[0025] The method for fabricating metal lines on the surface of the aforementioned glass substrate includes full-plate electroplating of a glass substrate with a via diameter greater than 50 μm to form a metal layer on the surface of the glass substrate, simultaneously filling the vias with metal. Full-plate electroplating improves the uniformity of the metal layer thickness, but the resulting metal layer is relatively thick. Therefore, it is necessary to thin the metal layer. A sulfuric acid-hydrogen peroxide etchant is used to thin the metal layer on the surface of the glass substrate. This sulfuric acid-hydrogen peroxide etchant has a high etching factor, enabling the thickness to be reduced to 10 μm~25 μm while maintaining the uniformity of the thinned metal layer thickness. The thinned metal layer is then patterned to form metal lines on the surface of the glass substrate. Therefore, the above method for fabricating metal lines on the surface of a glass substrate combines full-plate electroplating with chemical etching. By selecting a suitable etchant, metal lines with a thickness of 10 μm~25 μm can be formed on the surface of a glass substrate with large-diameter vias, while simultaneously improving thickness uniformity. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a process flow diagram illustrating the fabrication method of metal lines on the surface of a glass substrate according to some embodiments of this application;

[0028] Figure 2 This is a schematic diagram of the metal layer after etching using traditional chemical etchants;

[0029] Figure 3 This is a schematic diagram of the metal layer after etching using the sulfuric acid-hydrogen peroxide etchant according to some embodiments of this application;

[0030] Figure 4 This is a process flow diagram illustrating the fabrication method of metal lines on the surface of a glass substrate according to other embodiments of this application.

[0031] Figure 5 for Figure 4 The diagram shown is a schematic representation of a process flow chart. Detailed Implementation

[0032] To facilitate understanding of this application, a more comprehensive description of the application will be provided below in conjunction with specific embodiments. Preferred embodiments of the application are given in the specific embodiments. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0034] Unless otherwise stated or in case of conflict, the terms or phrases used in this application shall have the following meanings:

[0035] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" and "second" may explicitly or implicitly include at least one of those features.

[0036] In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.

[0037] In this application, "one or more" refers to any one, any two, or any two or more of the listed items. "Several" refers to any two or more.

[0038] Unless otherwise specified, all percentage concentrations mentioned in this application refer to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of that component.

[0039] The terms "optionally" and similar expressions used in this application refer to embodiments of this application that may provide certain beneficial effects under certain circumstances. However, other embodiments may also be optional in the same or other circumstances. Furthermore, the description of one or more optional embodiments does not imply that other embodiments are unavailable, nor is it intended to exclude other embodiments from the scope of this application.

[0040] When a numerical range is disclosed in this application, the range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to an integer, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed in this application should be understood to include any and all subranges to which they are included.

[0041] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0042] The terms "comprising" and "having," and any variations thereof, used in the embodiments of this application, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or components inherent to such processes, methods, products, or devices.

[0043] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0044] In this application, "above" and "below" both include the number itself. For example, a thickness of 1 μm or more means a thickness greater than or equal to 1 μm.

[0045] For glass substrates with large apertures, traditional methods for fabricating metal circuits include: first, filling the vias with metal, and then sputtering the metal circuits. This method produces metal circuits with good thickness uniformity (over 95%), but the thickness is relatively thin (less than 10 μm), and the metal filling depressions are quite large. Another method involves first applying a dry film to the glass substrate surface, then electroplating the vias and fabricating the circuits. This method produces thicker copper in individual areas of the dry film plating, with overall board uniformity between 85% and 90%, and finally removing the dry film. The thickness of the metal circuits obtained using these methods is limited by the inner diameter of the vias, typically exceeding half the inner diameter, meaning the metal circuit thickness is usually greater than 25 μm. However, current metal circuit requirements are generally between 10 μm and 25 μm. Therefore, improving thickness uniformity within the 10 μm to 25 μm range is one of the pressing problems to be solved in this field.

[0046] Based on this, the first aspect of this application provides a method for fabricating metal lines on the surface of a glass substrate. Please refer to [link to relevant documentation]. Figure 1 It includes the following steps:

[0047] Step S110: Obtain a glass substrate with through holes, the inner diameter of which is greater than 50 μm.

[0048] It is understood that obtaining through-holes with an inner diameter greater than 50 μm is a common practice in the art. Specifically, step S110 includes: laser-modifying the glass substrate and then etching with hydrofluoric acid to obtain through-holes with an inner diameter greater than 50 μm. The specific laser-modification and hydrofluoric acid etching methods can be those commonly used in the art and are not particularly limited here.

[0049] In some embodiments, ultrasonic waves are also applied during the hydrofluoric acid etching process. This arrangement helps to improve the uniformity of the pore size.

[0050] Through-holes with an inner diameter greater than 50μm can accommodate larger chips.

[0051] In some embodiments, the thickness of the glass substrate is 0.2 mm to 0.6 mm. For example, the thickness of the glass substrate may be, but is not limited to, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, or any combination of these values.

[0052] In some embodiments, the size of the glass substrate is less than or equal to 515mm × 510mm.

[0053] Step S120: Perform full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate, while simultaneously filling the through holes with the metal.

[0054] It can be understood that filling the through-hole with metal means that during the electroplating process, the inside of the through-hole is filled with metal, so that the upper and lower surfaces of the glass substrate are connected.

[0055] In some embodiments, the material of the metal layer includes copper.

[0056] In some embodiments, the thickness of the metal layer is 30 μm to 50 μm.

[0057] In some embodiments, the electroplating solution used for the full-plate electroplating of the glass substrate includes: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L. It is understood that the specific brightener and wetting agent can be those commonly used in the art and are not particularly limited herein.

[0058] For through holes with an inner diameter greater than 50 μm, compared to through holes with a smaller diameter, the electroplating uniformity is slightly worse in the subsequent electroplating process, and the thickness is easily affected by the hole diameter. Therefore, in some embodiments of this application, the full-board electroplating method is used, which produces a metal layer with better thickness uniformity than the traditional pattern electroplating method. However, the thickness is usually thicker, so thinning treatment is required to obtain a metal circuit with a thickness of 10 μm to 25 μm.

[0059] In some embodiments, prior to step S120, a seed layer is formed on the surface of the glass substrate and the inner wall of the via. Forming a seed layer on the surface of the glass substrate and the inner wall of the via facilitates subsequent in-hole electroplating, enabling the via to be metallized (with copper inside the via for conductivity) and achieving interlayer conductivity.

[0060] Specifically, a seed layer is formed using physical vapor deposition (PVD). For example, a seed layer can be formed using sputtering deposition.

[0061] In some embodiments, the thickness of the seed layer is greater than 1 μm. Specifically, the thickness of the seed layer is 1 μm to 3 μm.

[0062] In some embodiments, the seed layer is made of copper.

[0063] Step S130: Use sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate to a thickness of 10μm~25μm.

[0064] Sulfuric acid-hydrogen peroxide etchant has a high etching factor, which can reduce the thickness of the metal layer while ensuring the uniformity of the thickness. Using sulfuric acid-hydrogen peroxide etchant can dissolve copper with minimal in-plane deviation in etching amount, resulting in a smooth metal surface. This is beneficial for improving the etching factor and achieving finer lines and uniform thickness.

[0065] Please see Figure 2 Traditional etchants have low etching factors, resulting in etched lines with a certain angle. Figure 3 In this process, the sulfuric acid hydrogen peroxide etchant has a high etching factor, a leveling effect in the horizontal direction, and a slow inhibition effect in the vertical direction, resulting in right-angled lines after etching.

[0066] Specifically, the sulfuric acid-hydrogen peroxide etchant includes sulfuric acid, hydrogen peroxide, a stabilizer, and an etching inhibitor. The stabilizer inhibits the decomposition of hydrogen peroxide, while the etching inhibitor inhibits vertical etching and accelerates horizontal etching. In some embodiments, the sulfuric acid-hydrogen peroxide etchant comprises, by mass percentage: 3%~5% sulfuric acid, 2%~4% hydrogen peroxide, 8%~12% stabilizer, 3%~5% etching inhibitor, and water. It is understood that the specific stabilizer and etching inhibitor can be those commonly used in the art and are not particularly limited herein.

[0067] Using sulfuric acid-hydrogen peroxide etchant to thin the metal layer is more cost-effective than mechanical planarization, and can reduce the thickness to 10μm~25μm while ensuring thickness uniformity.

[0068] Step S140: Pattern the thinned metal layer to form metal lines on the surface of the glass substrate.

[0069] In some embodiments, step S140 includes:

[0070] According to the preset pattern, cover part of the thinned metal layer with an anti-corrosion dry film;

[0071] The thinned metal layer is etched to remove the portion of the metal layer not covered by the resist dry film;

[0072] Remove the resist dry film and form metal lines on the surface of the glass substrate.

[0073] It is understandable that the preset pattern refers to the pattern of the metal circuit to be obtained.

[0074] In some embodiments, the etching step of the thinned metal layer is performed using wet etching. Specifically, the wet etching step uses copper chloride acid etching.

[0075] In some embodiments, please refer to 4. The method for fabricating metal lines on the surface of a glass substrate includes the following steps:

[0076] Step S210: Perform laser modification on the glass substrate.

[0077] Step S220: The laser-modified glass substrate is etched with hydrofluoric acid to obtain a glass substrate with through holes having an inner diameter greater than 50 μm.

[0078] Step S230: A seed layer is formed on the surface of the glass substrate and the inner wall of the through hole.

[0079] Step S240: Perform full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate, while simultaneously filling the through holes with metal.

[0080] Step S250: Use sulfuric acid-hydrogen peroxide etchant to thin the metal layer on the surface of the glass substrate to a thickness of 10μm~25μm.

[0081] Step S260: Cover a portion of the thinned metal layer with an anti-corrosion dry film according to the preset pattern.

[0082] Step S270: Etch the thinned metal layer to remove the portion of the metal layer not covered by the resist dry film.

[0083] Step S280: Remove the resist dry film and form metal lines on the surface of the glass substrate.

[0084] The specific processes for each step are the same as described above, and will not be repeated here.

[0085] Please refer to the following: Figure 5 , Figure 5 for Figure 4 This is a specific schematic diagram of the process flow chart shown. Figure 5 In this process, the glass substrate 310 is first laser-modified in step S210, and then etched in step S220 to form through-holes 312. A seed layer 320 is sputtered onto the surface of the glass substrate 310 and the inner wall of the through-holes in step S230. The glass substrate 310 is then electroplated across the entire substrate in step S240 to form a metal layer 330. The metal layer 330 is then thinned in step S250. A resist dry film 340 is partially coated onto the surface of the metal layer 330 in step S260, and then etched in step S270 to remove the portion of the metal layer not covered by the resist dry film 340. Finally, the resist dry film 340 is removed in step S280, forming metal lines on the surface of the glass substrate 310.

[0086] The method for fabricating metal lines on the surface of the aforementioned glass substrate includes full-plate electroplating of a glass substrate with a via diameter greater than 50 μm to form a metal layer on the surface of the glass substrate, simultaneously filling the vias with metal. Full-plate electroplating improves the uniformity of the metal layer thickness, but the resulting metal layer is relatively thick. Therefore, the metal layer needs to be thinned. A sulfuric acid-hydrogen peroxide etchant is used to thin the metal layer on the surface of the glass substrate to a thickness of 10 μm to 25 μm. The sulfuric acid-hydrogen peroxide etchant has a high etching factor, which can ensure the uniformity of the metal layer thickness after thinning. Then, the thinned metal layer is patterned to form metal lines on the surface of the glass substrate. Therefore, the above method for fabricating metal lines on the surface of a glass substrate combines full-plate electroplating with chemical etching. By selecting a suitable etchant, metal lines with a thickness of 10 μm to 25 μm can be formed on the surface of a glass substrate with large-diameter vias, while simultaneously improving thickness uniformity.

[0087] Furthermore, the metal lines produced by the above-mentioned method for fabricating metal lines on the surface of a glass substrate have a thickness uniformity of ≥95%.

[0088] Figure 1 and Figure 4 These are schematic flowcharts illustrating a method for fabricating metal lines on a glass substrate surface according to one embodiment of this application. It should be understood that, although Figure 1 and Figure 4 The steps in the flowchart shown are displayed sequentially according to the arrows. However, these steps are not necessarily performed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order requirement for the execution of these steps; they can be executed in other orders. Figure 1 and Figure 4 At least some of the steps in the process may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. Their execution order is not necessarily sequential, but can be executed in turn or alternately with at least some of other steps or other sub-steps or stages.

[0089] The second aspect of this application provides a glass substrate with metal lines, which is manufactured by the above-described manufacturing method.

[0090] The metal lines in the glass substrates described above have a thickness of 10μm to 25μm and good thickness uniformity, making them suitable for use in displays, packaging substrates, and receiving boards.

[0091] A third aspect of this application provides an electronic device including the glass substrate with metal lines described above.

[0092] Specifically, electronic devices can be, but are not limited to, mobile phones, computers, televisions, glasses-free 3D, head-mounted displays (VR, MR), cinema screens, creative displays, vehicle-mounted displays, public displays, and other related devices.

[0093] To make the objectives and advantages of this application clearer, the following detailed description of the fabrication method and effects of the metal circuitry on the glass substrate surface of this application, in conjunction with specific embodiments, is provided. It should be understood that the specific embodiments described herein are merely illustrative of this application and should not be construed as limiting the scope of this application. Unless otherwise specified, the following embodiments do not include components other than unavoidable impurities. Unless otherwise specified, the drugs and instruments used in the embodiments are conventional choices in the art. Experimental methods in the embodiments that do not specify specific conditions are implemented under conventional conditions, such as those described in literature, books, or methods recommended by the manufacturer.

[0094] Example 1

[0095] This embodiment provides a method for fabricating metal lines on the surface of a glass substrate, including the following steps:

[0096] (1) Obtain a glass substrate with a thickness of 0.4 mm and a size of 515 mm × 510 mm, and perform laser modification on the glass substrate.

[0097] (2) The laser-modified glass substrate was etched with hydrofluoric acid to obtain a glass substrate with a through hole with an inner diameter of 100 μm and an outer diameter of 120 μm.

[0098] (3) A copper seed layer with a thickness of 3 μm is formed on the surface of the glass substrate and the inner wall of the through hole by physical sputtering.

[0099] (4) Obtain an electroplating solution, which includes: copper sulfate with a concentration of 230 g / L, sulfuric acid with a concentration of 100 g / L, hydrochloric acid with a concentration of 50 ppm, brightener with a concentration of 1 mL / L and wetting agent with a concentration of 10 mL / L. Perform full-plate electroplating on the glass substrate to form a metal layer on the surface of the glass substrate, while filling the through holes with metal.

[0100] (5) The metal layer on the surface of the glass substrate is thinned by using sulfuric acid-hydrogen peroxide etchant, wherein, by mass percentage, the sulfuric acid-hydrogen peroxide etchant includes 4% sulfuric acid, 3% hydrogen peroxide, 10% stabilizer, 4% etching inhibitor and the balance water.

[0101] (6) Cover part of the thinned metal layer with an anti-corrosion dry film according to the preset pattern.

[0102] (7) The thinned metal layer is etched. In the etching step, copper chloride acid etching is used to remove the metal layer that is not covered by the resist dry film.

[0103] (8) Remove the resist dry film and form metal lines on the surface of the glass substrate.

[0104] Comparative Example 1

[0105] Comparative Example 1 provides a method for fabricating metal lines on the surface of a glass substrate, comprising the following steps:

[0106] (1) Obtain a glass substrate with a thickness of 0.4 mm and a size of 515 mm × 510 mm, and perform laser modification on the glass substrate.

[0107] (2) The laser-modified glass substrate was etched with hydrofluoric acid to obtain a glass substrate with a through hole with an inner diameter of 100 μm and an outer diameter of 120 μm.

[0108] (3) A copper seed layer with a thickness of 3 μm is formed on the surface of the glass substrate and the inner wall of the through hole by physical sputtering.

[0109] (4) Apply a dry film to a portion of the surface of the glass substrate according to the preset pattern to obtain an electroplating solution. The electroplating solution includes: copper sulfate with a concentration of 230 g / L, sulfuric acid with a concentration of 100 g / L, hydrochloric acid with a concentration of 50 ppm, brightener with a concentration of 1 mL / L, and wetting agent with a concentration of 10 mL / L. Perform pattern electroplating on the portion of the glass substrate that is not covered with a dry film to form a metal layer on the surface of the glass substrate, and at the same time fill the through holes with metal.

[0110] (5) Remove the dry film and form metal lines on the surface of the glass substrate.

[0111] Comparative Example 2

[0112] Comparative Example 2 provides a method for fabricating metal lines on the surface of a glass substrate. The preparation steps are similar to those in Example 1, except that the etchant used in step (5) is different. In Comparative Example 2, the composition of the etchant used in step (5) is as follows: 200 g / L copper chloride, 100 g / L hydrochloric acid, 100 g / L sodium chloride, and 150 g / L ammonium chloride.

[0113] The thickness and thickness uniformity of the metal circuits fabricated in the above embodiments and comparative examples were tested, and the data are shown in Tables 1 and 2 below. The following data were measured using the nine-point method. The unit of thickness is μm. In Table 1, max represents the maximum thickness, min represents the minimum thickness, avg represents the average thickness, and COV represents the coefficient of variation, calculated using the following formula: COV = (max - min) / (2 × avg) × 100%. Uniformity is expressed as 100% - COV.

[0114] Table 1

[0115]

[0116] Table 2

[0117]

[0118] As can be seen from Tables 1 and 2, the metal layer produced by full-plate electroplating using the method of Example 1 is thicker and has good uniformity. Further chemical thinning results in a metal layer thickness of 10μm~25μm with good uniformity.

[0119] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0120] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A method for fabricating metal lines on the surface of a glass substrate, characterized in that, Includes the following steps: A glass substrate with through holes is obtained, wherein the inner diameter of the through holes is greater than 50 μm; The glass substrate is electroplated across the entire substrate to form a metal layer on the surface of the glass substrate, while simultaneously filling the through holes with the metal. The metal layer on the surface of the glass substrate is thinned using a sulfuric acid-hydrogen peroxide etchant to a thickness of 10 μm to 25 μm. The thinned metal layer is patterned to form metal lines on the surface of the glass substrate. Before performing full-plate electroplating on the glass substrate, the method further includes forming a seed layer on the surface of the glass substrate and the inner wall of the through hole using physical vapor deposition.

2. The method for fabricating metal lines on the surface of a glass substrate according to claim 1, characterized in that, The sulfuric acid-hydrogen peroxide etchant comprises, by weight percentage: 3%~5% sulfuric acid, 2%~4% hydrogen peroxide, 8%~12% stabilizer, 3%~5% etching inhibitor, and water.

3. The method for fabricating metal lines on the surface of a glass substrate according to claim 1, characterized in that, In the step of performing full-plate electroplating on the glass substrate, the electroplating solution includes: copper sulfate with a concentration of 200 g / L to 250 g / L, sulfuric acid with a concentration of 80 g / L to 120 g / L, hydrochloric acid with a concentration of 40 ppm to 60 ppm, a brightener with a concentration of 0.5 mL / L to 1.5 mL / L, and a wetting agent with a concentration of 5 mL / L to 15 mL / L; and / or, In the step of performing full-plate electroplating on the glass substrate, the thickness of the metal layer formed is 30μm~50μm.

4. The method for fabricating metal lines on the surface of a glass substrate according to claim 1, characterized in that, The thickness of the seed layer is greater than 1 μm.

5. The method for fabricating metal lines on the surface of a glass substrate according to claim 4, characterized in that, The thickness of the seed layer is 1μm to 3μm.

6. The method for fabricating metal lines on the surface of a glass substrate according to claim 1, 4, or 5, characterized in that, The seed layer is made of copper.

7. The method for fabricating metal lines on the surface of a glass substrate according to claim 1, characterized in that, The step of patterning the thinned metal layer to form metal lines on the surface of the glass substrate includes: According to the preset pattern, cover part of the thinned metal layer with an anti-corrosion dry film; The thinned metal layer is etched to remove the portion of the metal layer not covered by the resist dry film; Remove the resist dry film and form metal lines on the surface of the glass substrate.

8. The method for fabricating metal lines on the surface of a glass substrate according to any one of claims 1 to 5 and 7, characterized in that, The thickness of the glass substrate is 0.2mm to 0.6mm.

9. The method for fabricating metal lines on the surface of a glass substrate according to any one of claims 1 to 5 and 7, characterized in that, The steps for obtaining a glass substrate with through holes include: performing laser modification and hydrofluoric acid etching on the glass substrate to form through holes with an inner diameter greater than 50 μm on the glass substrate.

10. A glass substrate with metallic circuitry, characterized in that, It is produced by the manufacturing method described in any one of claims 1 to 9.

11. An electronic device, characterized in that, Including the glass substrate with metal lines as described in claim 10.

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