Semiconductor device and method for manufacturing semiconductor device

By adopting alternately laminated insulating layer and conductive layer structures in semiconductor devices, combined with the design of support and contact structures, the challenges of improving integration and reliability of semiconductor devices in the prior art are solved, and stability and high reliability are achieved three-dimensional structure manufacturing.

CN119136544APending Publication Date: 2024-12-13SK HYNIX INC
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Patent Information

Application Number
CN202311422061.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-06-12
Filing Date
2023-10-30
Publication Date
2024-12-13

AI Technical Summary

Technical Problem

The existing semiconductor devices have challenges in improving integration and operational reliability, especially in the three-dimensional structure manufacturing of stacked memory cells on substrates, and it is difficult to achieve stable structure and reliability improvement.

Method used

By using alternately laminated insulating layer and conductive layer structures, the size and shape of the contact structure are adjusted using a barrier layer and an insulating material to improve the stability and reliability of the manufacturing process.

Benefits of technology

A semiconductor device with a stable structure and improved reliability is realized. By optimizing the design of the support and contact structure, the integration and operational reliability of the semiconductor device are improved.

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Abstract

The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. A semiconductor device may include: a gate structure including insulating layers and conductive layers alternately stacked; first supports in the gate structure, each first support including a second channel layer; second supports in the gate structure, each second support including a barrier layer; and contact structures extending through the gate structure between the second supports, where each contact structure is connected to a corresponding conductive layer.
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