Display panel and method for manufacturing light emitting element

Abstract

The invention relates to a display panel and a method for manufacturing a light emitting element. The display panel includes: a base layer; the circuit layer is arranged on the base body layer; and a light emitting element disposed on the circuit layer. The light-emitting element includes: a barrier layer including a metal and a metal oxide; a hydrogen supply layer disposed on the barrier layer and including an inorganic material; a first electrode disposed on the hydrogen supply layer; a light emitting layer disposed on the first electrode and including quantum dots; and a second electrode disposed on the light emitting layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits arising from Korean Patent Application No. 10-2023-0075126, filed on June 12, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The disclosure herein relates to a display panel including a light emitting element and a method for manufacturing the light emitting element. Background Art

[0004] Various display devices are being developed for multimedia devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles. Such display devices may include self-luminous display elements that can realize image display by allowing light-emitting materials including organic or inorganic compounds to emit light.

[0005] Recently, it has been suggested to improve the color reproducibility of a display device using a light-emitting element using quantum dots as a light-emitting material. Summary of the invention

[0006] In a display device including a light-emitting element using quantum dots as a light-emitting material, it is desirable to improve the light-emitting efficiency and lifetime of the light-emitting element using quantum dots.

[0007] Embodiments of the present disclosure provide a light emitting element having improved luminous efficiency and lifetime and having improved process reliability.

[0008] Embodiments of the present disclosure also provide a display panel having reduced display defects by effectively preventing a change in properties of a transistor electrically connected to a light emitting element.

[0009] An embodiment of the present invention provides a display panel, comprising: a base layer; a circuit layer disposed on the base layer; and a light-emitting element disposed on the circuit layer, wherein the light-emitting element comprises: a barrier layer comprising a metal and a metal oxide; a hydrogen supply layer disposed on the barrier layer and comprising an inorganic material; a first electrode disposed on the hydrogen supply layer; a light-emitting layer disposed on the first electrode and comprising quantum dots; and a second electrode disposed on the light-emitting layer.

[0010] In an embodiment, the hydrogen supply layer may include hydrogen impurities, wherein the hydrogen impurities diffuse into the light emitting layer.

[0011] In an embodiment, the hydrogen supply layer may include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

[0012] In an embodiment, the thickness of the hydrogen supply layer may be approximately 2000 angstroms or less.

[0013] In an embodiment, the barrier layer may include: a first layer including a metal; and a second layer disposed on the first layer and including a metal oxide.

[0014] In an embodiment, the resonance distance of the light emitting element may be defined as a distance between an upper surface of the first layer and a lower surface of the second electrode.

[0015] In an embodiment, the first layer may have a thickness of about 500 angstroms or more, and the second layer may have a thickness in a range of about 50 angstroms to about 100 angstroms.

[0016] In an embodiment, the content of the metal oxide in the barrier layer may gradually increase in a direction toward the light emitting layer.

[0017] In an embodiment, the metal oxide may include aluminum oxide.

[0018] In an embodiment, the metal may include at least one selected from aluminum and silver.

[0019] In an embodiment, the circuit layer may include: at least one transistor electrically connected to the light emitting element; a connecting electrode electrically connected to the at least one transistor; and an insulating layer disposed between the connecting electrode and the barrier layer, wherein the at least one transistor includes an oxide semiconductor.

[0020] In an embodiment, the first electrode may cover the hydrogen supply layer and the barrier layer, and the first electrode may be connected to the connection electrode via a contact hole defined through the insulating layer.

[0021] In embodiments, the barrier layer may be connected to the connection electrode via a contact hole defined through the insulating layer, and the first electrode may cover the hydrogen supply layer, and the first electrode may contact an upper surface of the barrier layer exposed from the hydrogen supply layer.

[0022] In an embodiment, the display panel may further include an additional barrier layer disposed between the insulating layer and the barrier layer, and the additional barrier layer is in contact with each of the insulating layer and the barrier layer, wherein the additional barrier layer includes a transparent conductive oxide.

[0023] In an embodiment, the first electrode may include a transparent conductive oxide.

[0024] In an embodiment, the thickness of the first electrode may be in a range of about 500 angstroms to about 1000 angstroms.

[0025] In an embodiment, the light-emitting element may be provided in plurality, and the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element emitting light of different colors, wherein a barrier layer of the first light-emitting element and a barrier layer of the second light-emitting element are spaced apart from each other, and a hydrogen supply layer of the first light-emitting element and a hydrogen supply layer of the second light-emitting element are spaced apart from each other.

[0026] In an embodiment, the light emitting layer of the first light emitting element may include first quantum dots, the light emitting layer of the second light emitting element may include second quantum dots, and the diameter of the first quantum dots and the diameter of the second quantum dots may be different from each other.

[0027] In an embodiment, the light emitting element may further include: a hole transport region disposed between the first electrode and the light emitting layer; and an electron transport region disposed between the light emitting layer and the second electrode.

[0028] In an embodiment, the hydrogen supply layer may include hydrogen impurities, wherein the hydrogen impurities diffuse into the electron transport region.

[0029] In an embodiment, a plurality of light-emitting elements may be provided, and the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element emitting light of different colors, wherein the thickness of the hole transport region of the first light-emitting element and the thickness of the hole transport region of the second light-emitting element are different from each other.

[0030] In an embodiment, the hole transport region of each of the first light-emitting element and the second light-emitting element may include a hole injection layer and a hole transport layer stacked sequentially on each other, and the thickness of the hole injection layer of the first light-emitting element and the thickness of the hole injection layer of the second light-emitting element may be different from each other.

[0031] In an embodiment, the light emitting element may further include: an electron transport region disposed between the first electrode and the light emitting layer; and a hole transport region disposed between the light emitting layer and the second electrode.

[0032] In an embodiment, a plurality of light-emitting elements may be provided, and the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element emitting light of different colors, wherein the thickness of the electron transport region of the first light-emitting element and the thickness of the electron transport region of the second light-emitting element are different from each other.

[0033] In an embodiment of the present invention, a method for manufacturing a light-emitting element includes: forming a barrier layer including a metal and a metal oxide; forming a hydrogen supply layer, which is arranged on the barrier layer and includes an inorganic material; forming a first electrode on the hydrogen supply layer; forming a light-emitting layer including quantum dots on the first electrode; and forming a second electrode on the light-emitting layer.

[0034] In an embodiment, forming the hydrogen supply layer may include depositing an inorganic material, and depositing the inorganic material may be performed by a chemical vapor deposition method by injecting a gas including hydrogen.

[0035] In an embodiment, the formation of the barrier layer may include forming an initial barrier layer, the initial barrier layer including a first initial layer including a metal and a second initial layer disposed on the first initial layer and including a metal oxide, and increasing the thickness of the second initial layer, wherein increasing the thickness of the second initial layer is performed by a heat treatment process or a plasma treatment process.

[0036] In an embodiment, the method for manufacturing a light emitting element may further include forming a functional layer on the first electrode after forming the first electrode and before forming the light emitting layer, wherein forming the functional layer is performed by an inkjet printing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings are included to provide a further understanding of the present invention and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention. In the drawings:

[0038] Figure 1 is a perspective view of a display device according to an embodiment of the present invention;

[0039] Figure 2 is an exploded perspective view of a display device according to an embodiment of the present invention;

[0040] Figure 3 It is along Figure 1 A cross-sectional view of a display module according to an embodiment of the present invention taken along line II';

[0041] Figure 4 is a plan view of an enlarged portion of a display area of ​​a display module according to an embodiment of the present invention;

[0042] Figure 5 It is along Figure 4 A cross-sectional view of a display module according to an embodiment of the present invention taken along line II-II';

[0043] Figure 6 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention;

[0044] Fig. 7A and Figure 7B is an enlarged cross-sectional view of a light emitting element according to an embodiment of the present invention;

[0045] Figure 8 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention;

[0046] Fig. 9 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention;

[0047] Fig.10 It is along Figure 4 A cross-sectional view of a display module according to an embodiment of the present invention taken along line II-II';

[0048] Fig.11A and Fig. 11B is an enlarged cross-sectional view of a light emitting element according to an embodiment of the present invention; and

[0049] FIG. 12A to FIG. 12H 1 is a cross-sectional view schematically showing a process of a method for manufacturing a light emitting element according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the present invention may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0051] In the present disclosure, when an element (or region, layer, part, etc.) is referred to as being "on" another element, "connected to" or "coupled to" another element, this means that the element can be directly set on the other element / directly connected to / directly coupled to the other element, or a third element can be set between the element and the other element.

[0052] The same reference numerals refer to the same elements. In addition, in the drawings, in order to effectively describe the technical contents, the thickness, ratio and size of the elements are exaggerated.

[0053] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the scope of the present invention, a first element may be referred to as a second element, and a second element may also be referred to as a first element in a similar manner.

[0054] In addition, terms such as "below", "lower", "above", and "upper" are used to describe the relationship of components shown in the drawings. These terms are used as relative concepts and are described with reference to the directions indicated in the drawings.

[0055] The terms used in this article are only used to describe the purpose of specific embodiments, and are not intended to be limited. Unless the context clearly indicates otherwise, as used in this article, "one", "one (kind / person)", "the (described)" and "at least one (kind / person)" do not represent quantitative restrictions, and are intended to include singular and plural. Therefore, the reference to "described" element after the reference to "one" element in the claim includes one element and a plurality of described elements. In addition, unless the context clearly indicates otherwise, "element" has the same meaning as "at least one element". "At least one (kind / person)" is not interpreted as being limited to "one", "one (kind / person)". "Or" means "and / or". As used in this article, the term "and / or" includes any combination and all combinations of one or more related listed items. It will also be understood that the terms “comprises” and / or “comprising” or “includes” and / or “including” when used in this specification specify the presence of stated features, regions, integers, steps, operations, elements, components and / or groups thereof, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components and / or groups thereof.

[0056] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measured values ​​in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0057] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will also be understood that, unless explicitly defined herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an overly idealized or overly formal sense.

[0058] Embodiments are described herein with reference to cross-sectional views as schematic diagrams of idealized embodiments. As such, variations in the shapes of the diagrams due to, for example, manufacturing techniques and / or tolerances are anticipated. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions shown herein, but will include deviations in shape, for example, caused by manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. In addition, the sharp corners shown may be rounded. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions and are not intended to limit the scope of the claims.

[0059] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0060] Figure 1 is a perspective view of a display device according to an embodiment of the present invention. Figure 2 is an exploded perspective view of a display device according to an embodiment of the present invention. Figure 3 It is along Figure 1 A cross-sectional view of a display module according to an embodiment of the present invention taken along line II′.

[0061] In an embodiment, the display device DD may be a large electronic device such as a television, a monitor, or an external billboard. In addition, the display device DD may be a small or medium-sized electronic device such as a personal computer, a laptop computer, a personal digital terminal, a car navigation system unit, a game console, a smart phone, a tablet computer, or a camera. In addition, it should be understood that these are only examples and the display device DD may be used as other display devices without departing from the present invention. In an embodiment, as Figure 1 As shown in , the display device DD may be, for example, a smart phone.

[0062] Reference Figures 1 to 3 , an embodiment of the display device DD may display an image IM toward a third direction DR3 in a display surface FS parallel to each of the first direction DR1 and the second direction DR2. The image IM may include both a moving image and a still image. In an embodiment, as shown in FIG. Figure 1 As shown in , the image IM may include, for example, a clock window and icons. The display surface FS where the image IM is displayed may correspond to the front surface of the display device DD.

[0063] In an embodiment, the front surface (or upper surface) and the rear surface (or lower surface) of each component are defined based on the direction of displaying the image IM. The front surface and the rear surface are opposite to each other in the third direction DR3, and the normal direction of each of the front surface and the rear surface may be parallel to the third direction DR3. In the present disclosure, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 are relative concepts and may be converted into different directions. In the present disclosure, "on a plane" may mean when observed in the third direction DR3.

[0064] like Figure 2 As shown in FIG. 1 , the display device DD according to the embodiment may include a window WP, a display module DM, and a housing HAU. The window WP and the housing HAU may be coupled to each other to constitute the appearance of the display device DD.

[0065] The window WP may include an optically transparent insulating material. In an embodiment, for example, the window WP may include glass or plastic. The front surface of the window WP may define a display surface FS of the display device DD. In an embodiment, as shown in FIG. Figure 1 and Figure 2 As shown in , the display surface FS may include a transmissive area TA and a bezel area BZA. The transmissive area TA may be an optically transparent area. In an embodiment, for example, the transmissive area TA may be an area having a visible light transmittance of about 90% or more.

[0066] The frame area BZA may be an area having a relatively low light transmittance compared to the transmission area TA. The frame area BZA may define the shape of the transmission area TA. The frame area BZA is adjacent to the transmission area TA, and the frame area BZA may surround the transmission area TA. However, this is merely an example, and in the window WP according to an embodiment of the present invention, the frame area BZA may be omitted. The window WP may further include at least one functional layer among an anti-fingerprint layer, a hard coating layer, and an anti-reflection layer, and is not limited to any one embodiment.

[0067] The display module DM may be disposed in the lower portion of the window WP. The display module DM may be a component that substantially generates an image IM. The image IM generated in the display module DM is displayed in the display surface IS of the display module DM and is visually recognized by the user from the outside through the transmission area TA.

[0068] The display module DM includes a display area DA and a non-display area NDA. The display area DA may be an area activated by an electrical signal. The non-display area NDA is adjacent to the display area DA. The non-display area NDA may surround the display area DA. The non-display area NDA is an area covered by the frame area BZA and may not be visually recognized from the outside.

[0069] In an embodiment, Figure 3 As shown in , the display module DM may include a display panel DP and an optical member PP.

[0070] In the display module DM according to the embodiment, the display panel DP may be a light-emitting display panel. The display panel DP may be a quantum dot light-emitting display panel including quantum dot light-emitting elements.

[0071] In an embodiment, the display panel DP may include a first base layer BS1, a circuit layer DP-CL, and a display element layer DP-EL.

[0072] The first base layer BS1 may be a member that provides a base surface on which the circuit layer DP-CL and the display element layer DP-EL are disposed. The first base layer BS1 may be a glass substrate, a metal substrate, or a plastic substrate. However, the embodiments of the present invention are not limited thereto, and the first base layer BS1 may be an inorganic layer, an organic layer, or a composite material layer. The first base layer BS1 may be a flexible substrate that can be easily bent or folded.

[0073] The circuit layer DP-CL is disposed on the first base layer BS1, and the circuit layer DP-CL may include at least one insulating layer and a circuit element. The circuit element may include a signal line or a driving circuit of a pixel, etc. The circuit layer DP-CL may be formed by a process of forming an insulating layer, a semiconductor layer and a conductive layer by coating and deposition, etc., and a patterning process of forming an insulating layer, a semiconductor layer and a conductive layer by a photolithography process. The driving circuit of the pixel may include a plurality of transistors (not shown). In an embodiment, for example, the driving circuit of the pixel may include a switching transistor and a driving transistor for driving a light-emitting element.

[0074] The display element layer DP-EL is disposed on the circuit layer DP-CL, and the display element layer DP-EL may include a plurality of light emitting elements ED-1, ED-2, and ED-3 (see Figure 5 ). The display element layer DP-EL will be described in detail later.

[0075] The optical member PP may be disposed on the display panel DP to control reflected light in the display panel DP caused by external light. In an embodiment, for example, the optical member PP may include a color filter layer or a polarizing layer. However, according to another embodiment of the present invention, the optical member PP may be omitted.

[0076] The housing HAU may be coupled to the window WP. The housing HAU may be coupled to the window WP and provide a predetermined inner space. The display module DM may be accommodated in the inner space.

[0077] The housing HAU may include a material having relatively high rigidity. In an embodiment, for example, the housing HAU may include glass, plastic, or metal, or may include a plurality of frames and / or plates including or formed of at least one of the materials listed above. The housing HAU may effectively protect the components of the display device DD housed in the internal space from external impacts.

[0078] Figure 4 is a plan view of an enlarged portion of a display area of ​​a display module according to an embodiment of the present invention. Figure 4 shows the display module DM (see Figure 2 ) of the display surface IS (see Figure 2 ) observed on the display module DM (see Figure 2 ) plane, which shows the display module DM (see Figure 2 ) is an enlarged portion of the display area DA.

[0079] Reference Figure 4 In an embodiment, the display area DA may include pixel areas PXA-R, PXA-G, and PXA-B and a peripheral area NPXA surrounding the pixel areas PXA-R, PXA-G, and PXA-B.

[0080] The pixel regions PXA-R, PXA-G, and PXA-B may be associated with the pixel regions PXA-R, PXA-G, and PXA-B. Figure 5 The light provided by the described light emitting elements ED-1, ED-2, and ED-3 corresponds to the region from which the light is emitted. The pixel regions PXA-R, PXA-G, and PXA-B may include a first pixel region PXA-R, a second pixel region PXA-G, and a third pixel region PXA-B. The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may be arranged according to the orientation of the display module DM (see Figure 2 ) is distinguished by the color of the externally emitted light.

[0081] The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may respectively provide first color light, second color light, and third color light having colors different from each other. In an embodiment, for example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. However, the first to third color lights are not limited to the above examples.

[0082] The peripheral area NPXA sets or defines the boundaries of the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, and can effectively prevent color mixing between the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B.

[0083] Each of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B is provided in plurality to be repeatedly arranged, and the plurality of first pixel regions PXA-R, the plurality of second pixel regions PXA-G, and the plurality of third pixel regions PXA-B have a predetermined arrangement form in the display area DA. In an embodiment, for example, the first pixel region PXA-R and the third pixel region PXA-B may be alternately arranged along the first direction DR1 and form a first group PXG1. The second pixel region PXA-G may be arranged along the first direction DR1 and form a second group PXG2. Each of the first group PXG1 and the second group PXG2 may be provided in plurality, and the first group PXG1 and the second group PXG2 may be alternately arranged along the second direction DR2.

[0084] One second pixel region PXA-G may be disposed to be spaced apart from a corresponding one first pixel region PXA-R or a corresponding one third pixel region PXA-B in a fourth direction DR4. The fourth direction DR4 may be defined as a direction between the first direction DR1 and the second direction DR2.

[0085] Figure 4 The arrangement form of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the embodiment is shown, but the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may be arranged in various forms without being limited thereto. In the embodiment, the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have a configuration as shown in FIG. Figure 4 As shown in Alternatively, the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have a stripe arrangement or a diamond arrangement. Layout form.

[0086] The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have various shapes in a plane. In an embodiment, for example, the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have a shape such as a polygon, a circle, or an ellipse. Figure 4An embodiment is shown in which each of the first pixel region PXA-R and the third pixel region PXA-B has a quadrangular shape (eg, a diamond shape) on a plane and the second pixel region PXA-G has an octagonal shape.

[0087] The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have the same shape as each other on a plane, or at least some of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have shapes different from each other. Figure 4 An embodiment is shown in which the first pixel region PXA-R and the third pixel region PXA-B have the same shape as each other on a plane and the second pixel region PXA-G has a different shape from the first pixel region PXA-R and the third pixel region PXA-B.

[0088] At least some of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have different sizes or areas (e.g., plane areas) from each other on a plane. According to an embodiment, the plane area of ​​the first pixel region PXA-R emitting red light may be larger than the plane area of ​​the second pixel region PXA-G emitting green light, and smaller than the plane area of ​​the third pixel region PXA-B emitting blue light. However, the relationship between the sizes or areas of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B according to the color of the emitted light is not limited thereto, and may be determined according to the display module DM (see Figure 2 ). In addition, the embodiments of the present invention are not limited thereto, and the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may have the same size or area as each other on a plane.

[0089] In the embodiment of the present invention, the display module DM (see Figure 2 The shapes, areas or arrangements of the first pixel region PXA-R, the second pixel region PXA-G and the third pixel region PXA-B can be determined according to the color of the emitted light or the display module DM (see Figure 2 )'s shape and configuration are designed in various ways and are not limited to Figure 4 Those of the embodiments shown in .

[0090] Figure 5 It is along Figure 4 1 is a cross-sectional view of a display module according to an embodiment of the present invention taken along line II-II′.

[0091] Reference Figure 5, the display module DM according to the embodiment may include a display panel DP and an optical member PP disposed on the display panel DP, and the display panel DP may include a first base layer BS1, a circuit layer DP-CL, and a display element layer DP-EL.

[0092] In an embodiment, the display element layer DP-EL may include light emitting elements ED-1, ED-2, and ED-3, a pixel defining layer PDL, and an encapsulation layer TFE.

[0093] The light-emitting elements ED-1, ED-2, and ED-3 may include a first light-emitting element ED-1, a second light-emitting element ED-2, and a third light-emitting element ED-3. Each of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 may include a barrier layer BRL, a hydrogen supply layer HSL, a first electrode EL1, a hole transport region HTR, a light-emitting layer EML, an electron transport region ETR, and a second electrode EL2 sequentially stacked on each other.

[0094] The barrier layer BRL may be disposed on the circuit layer DP-CL. The barrier layer BRL may include a first barrier layer BRL-1, a second barrier layer BRL-2, and a third barrier layer BRL-3. The first barrier layer BRL-1, the second barrier layer BRL-2, and the third barrier layer BRL-3 may correspond to the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B, respectively, and the first barrier layer BRL-1, the second barrier layer BRL-2, and the third barrier layer BRL-3 are disposed as patterns spaced apart from each other or defined by patterns spaced apart from each other.

[0095] The hydrogen supply layer HSL may be disposed on the barrier layer BRL. The hydrogen supply layer HSL may include a first hydrogen supply layer HSL-1, a second hydrogen supply layer HSL-2, and a third hydrogen supply layer HSL-3. The first hydrogen supply layer HSL-1, the second hydrogen supply layer HSL-2, and the third hydrogen supply layer HSL-3 may correspond to the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B, respectively, and the first hydrogen supply layer HSL-1, the second hydrogen supply layer HSL-2, and the third hydrogen supply layer HSL-3 are arranged as patterns spaced apart from each other or defined by patterns spaced apart from each other. The first hydrogen supply layer HSL-1 may be disposed on the first barrier layer BRL-1, the second hydrogen supply layer HSL-2 may be disposed on the second barrier layer BRL-2, and the third hydrogen supply layer HSL-3 may be disposed on the third barrier layer BRL-3.

[0096] The first electrode EL1 may be disposed on the circuit layer DP-CL. In an embodiment, the first electrode EL1 may be disposed on the hydrogen supply layer HSL. The first electrode EL1 is provided in plurality, and the plurality of first electrodes EL1 may correspond to the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B, respectively, and the plurality of first electrodes EL1 are disposed in each of the light emitting elements ED-1, ED-2, and ED-3 as patterns spaced apart from each other. In an embodiment, each of the plurality of first electrodes EL1 may be an anode.

[0097] The first electrode EL1 of the first light-emitting element ED-1 may be disposed on the first hydrogen supply layer HSL-1. The first electrode EL1 of the first light-emitting element ED-1 may cover the first hydrogen supply layer HSL-1. The first electrode EL1 of the second light-emitting element ED-2 may be disposed on the second hydrogen supply layer HSL-2. The first electrode EL1 of the second light-emitting element ED-2 may cover the second hydrogen supply layer HSL-2. The first electrode EL1 of the third light-emitting element ED-3 may be disposed on the third hydrogen supply layer HSL-3. The first electrode EL1 of the third light-emitting element ED-3 may cover the third hydrogen supply layer HSL-3.

[0098] The pixel defining layer PDL may be disposed on the circuit layer DP-CL. In an embodiment, the pixel openings OH1, OH2, and OH3 may be defined in the pixel defining layer PDL. Each of the pixel openings OH1, OH2, and OH3 may expose at least a portion of a corresponding first electrode EL1 among a plurality of first electrodes EL1. The pixel openings OH1, OH2, and OH3 may include a first pixel opening OH1, a second pixel opening OH2, and a third pixel opening OH3.

[0099] Each of the pixel regions PXA-R, PXA-G, and PXA-B may be an area distinguished or separated by the pixel defining layer PDL. The peripheral area NPXA is an area between adjacent pixel regions among the pixel regions PXA-R, PXA-G, and PXA-B, and may be an area corresponding to the pixel defining layer PDL. In the specification, each of the pixel regions PXA-R, PXA-G, and PXA-B may correspond to one pixel or one pixel area. The pixel defining layer PDL may distinguish between the light emitting elements ED-1, ED-2, and ED-3.

[0100] In the first electrode EL1, the area exposed through the first pixel opening OH1 due to not being covered by the pixel defining layer PDL is defined as the first pixel area PXA-R. Each of the first barrier layer BRL-1 and the first hydrogen supply layer HSL-1 may overlap with the first pixel opening OH1 (that is, each of the first barrier layer BRL-1 and the first hydrogen supply layer HSL-1 may overlap with the first pixel area PXA-R). In the first electrode EL1, the area exposed through the second pixel opening OH2 due to not being covered by the pixel defining layer PDL is defined as the second pixel area PXA-G. Each of the second barrier layer BRL-2 and the second hydrogen supply layer HSL-2 may overlap with the second pixel opening OH2 (that is, each of the second barrier layer BRL-2 and the second hydrogen supply layer HSL-2 may overlap with the second pixel area PXA-G). In the first electrode EL1, the area exposed through the third pixel opening OH3 due to not being covered by the pixel defining layer PDL is defined as the third pixel area PXA-B. Each of the third barrier layer BRL-3 and the third hydrogen supply layer HSL-3 may overlap the third pixel opening OH3 (ie, each of the third barrier layer BRL-3 and the third hydrogen supply layer HSL-3 may overlap the third pixel area PXA-B).

[0101] In an embodiment, the hole transport region HTR may be disposed on the first electrode EL1. The hole transport region HTR may include a first hole transport region HTR-1 disposed in the first pixel opening OH1, a second hole transport region HTR-2 disposed in the second pixel opening OH2, and a third hole transport region HTR-3 disposed in the third pixel opening OH3. In an embodiment, the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 may be disposed in the first pixel opening OH1, the second pixel opening OH2, and the third pixel opening OH3, respectively, and the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 are disposed in a pattern spaced apart from each other or are defined by a pattern spaced apart from each other.

[0102] In an embodiment, the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 may have different thicknesses from each other. This will be described in detail later.

[0103] The light-emitting layer EML may be disposed on the hole transport region HTR. The light-emitting layer EML may include a first light-emitting layer EML-R disposed on the first hole transport region HTR-1 in the first pixel opening OH1, a second light-emitting layer EML-G disposed on the second hole transport region HTR-2 in the second pixel opening OH2, and a third light-emitting layer EML-B disposed on the third hole transport region HTR-3 in the third pixel opening OH3. In an embodiment, the first light-emitting layer EML-R, the second light-emitting layer EML-G, and the third light-emitting layer EML-B may be disposed in the first pixel opening OH1, the second pixel opening OH2, and the third pixel opening OH3, respectively, and the first light-emitting layer EML-R, the second light-emitting layer EML-G, and the third light-emitting layer EML-B may be disposed in a pattern spaced apart from each other or defined by a pattern spaced apart from each other.

[0104] The first light emitting layer EML-R, the second light emitting layer EML-G, and the third light emitting layer EML-B may include quantum dots QD1, QD2, and QD3, respectively. The quantum dots QD1, QD2, and QD3 may include first quantum dots QD1, second quantum dots QD2, and third quantum dots QD3.

[0105] The first light emitting layer EML-R may include a first quantum dot QD1. The first quantum dot QD1 may emit red light as a first color light. The second light emitting layer EML-G may include a second quantum dot QD2. The second quantum dot QD2 may emit green light as a second color light. The third light emitting layer EML-B may include a third quantum dot QD3. The third quantum dot QD3 may emit blue light as a third color light.

[0106] In an embodiment, the first color light may be light having a center (or peak) wavelength in a wavelength region of about 410 nanometers (nm) to about 480 nm, the second color light may be light having a center wavelength in a wavelength region of about 500 nm to about 570 nm, and the third color light may be light having a center wavelength in a wavelength region of about 625 nm to about 675 nm.

[0107] In the specification, quantum dots refer to crystals of semiconductor compounds. Quantum dots can emit light of various wavelengths depending on the size of the crystals. By controlling the ratio of elements in the quantum dot compound, quantum dots can emit light of various wavelengths.

[0108] The diameter of a quantum dot may be in the range of, for example, about 1 nm to about 10 nm.

[0109] Quantum dots can be synthesized by wet chemical processes, metal organic chemical deposition processes, molecular beam epitaxy processes, or similar processes.

[0110] The wet chemical process is a method of mixing an organic solvent and a precursor material and then growing a quantum dot particle crystal. When the crystal grows, the organic solvent naturally acts as a dispersant distributed on the surface of the quantum dot crystal, and the growth of the crystal can be controlled. Therefore, the wet chemical process is easier than vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and the wet chemical process can control the growth of quantum dot particles through a low-cost process.

[0111] The core of the quantum dot may be selected from the group consisting of Group II-VI compounds, Group III-V compounds, Group III-VI compounds, Group I-III-VI compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0112] The II-VI compounds can be selected from the group consisting of binary compounds of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdH CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS ternary compounds and mixtures thereof, and quaternary compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. In this article, the II-VI semiconductor compound may also include a Group I metal and / or a Group IV element. The I-II-VI compound may be selected from CuSnS or CuZnS, and the II-IV-VI compound may be selected from ZnSnS, etc. The I-II-IV-VI compound may be selected from CuSnS or CuZnS, and the II-IV-VI compound may be selected from ZnSnS, etc. 2 ZnSnS 2 , Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 、Ag 2 ZnSnS 2 Select from quaternary compounds and mixtures thereof.

[0113] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc., ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc., quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc., or any combination thereof. Here, the III-V semiconductor compound may also include a Group II element. Examples of the Group III-V semiconductor compound also including the Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0114] Examples of III-VI semiconductor compounds may include GaS, Ga 2 S 3 ,GaSe,Ga 2 Se 3 、GaTe、InS、InSe、In 2 Se 3 , InTe, etc., binary compounds such as InGaS 3 、InGaSe 3 or any combination thereof.

[0115] Examples of Group I-III-VI semiconductor compounds may include AgInS, AgInS 2 、AgInSe 2 、AgGaS、AgGaS 2 、AgGaSe 2 、CuInS、CuInS 2 、CuInSe 2 、CuGaS 2 、CuGaSe 2 、CuGaO 2 、AgGaO 2 、AgAlO 2 Ternary compounds such as AgInGaS 2 、AgInGaSe 2 or any combination thereof.

[0116] Examples of IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc., ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc., quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc., or any combination thereof.

[0117] Examples of II-IV-V group compounds may include those selected from ZnSnP, ZnSnP 2 、ZnSnAs 2 、ZnGeP 2 、ZnGeAs 2 、CdSnP 2 and CdGeP 2 Ternary compounds and mixtures thereof.

[0118] The Group IV element or Group IV compound may include a single element such as Si, Ge, etc., a binary compound such as SiC, SiGe, etc., or any combination thereof.

[0119] Each element included in a multi-element compound such as a binary compound, a ternary compound, and a quaternary compound may be present in the particle at a uniform concentration or a non-uniform concentration. That is, the above chemical formula represents the type of element included in the compound, and the ratio of the elements in the compound may be different. For example, AgInGaS 2 Can represent AgIn x Ga 1- x S 2 (x is a real number between 0 and 1).

[0120] In an embodiment, the quantum dot may have a single structure or a dual core-shell structure in which the concentration of each element included in the corresponding quantum dot is uniform. For example, the material included in the core and the material included in the shell may be different from each other.

[0121] The shell of the quantum dot can be used as a protective layer for preventing chemical deformation of the core to maintain semiconductor properties and / or a charging layer for imparting electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. In the core-shell structure, the binary compound, ternary compound or quaternary compound can have a concentration gradient in which the concentration of the element in the shell becomes lower toward the center.

[0122] Examples of the shell of the quantum dot may be metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal oxides or non-metal oxides may include SiO2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO and other binary compounds, such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 As described herein, examples of semiconductor compounds may include III-VI semiconductor compounds, II-VI semiconductor compounds, III-V semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, or any combination thereof. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS 2 , GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or any combination thereof.

[0123] Each element included in a multi-element compound such as a binary compound or a ternary compound may be present in the particle at a uniform concentration or a non-uniform concentration. That is, the above chemical formula represents the type of element included in the compound, and the ratio of the elements in the compound may be different.

[0124] The quantum dot can have a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45nm or less (e.g., about 40nm or less, or about 30nm or less), and color purity or color reproducibility can be improved within the above range. In addition, the light emitted by such a quantum dot is emitted in all directions, so that a wide viewing angle can be provided.

[0125] Furthermore, the quantum dots may be specifically in the form of spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate particles, and the like.

[0126] Since the energy band gap can be adjusted by adjusting the size of the quantum dots or adjusting the ratio of elements in the quantum dot compound, light of various wavelengths can be obtained from the quantum dot light-emitting layer. Therefore, a light-emitting element that emits light of various wavelengths can be realized by using quantum dots as described above (using quantum dots of different sizes or quantum dots with different ratios of elements in the quantum dot compound). In particular, it is possible to choose to adjust the size of the quantum dots or the ratio of elements in the quantum dot compound to emit red light, green light and / or blue light. In addition, quantum dots can be configured to emit white light by combining light of various colors.

[0127] Figure 5 An embodiment in which the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 have sizes (e.g., diameters) different from each other is shown. However, the embodiments of the present invention are not limited thereto, and the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 may have the same size (e.g., diameter) as each other.

[0128] In an embodiment, the electron transport region ETR may be disposed on the light emitting layer EML. The electron transport region ETR may include a first electron transport region ETR-1 disposed in the first pixel opening OH1 and disposed on the first light emitting layer EML-R, a second electron transport region ETR-2 disposed in the second pixel opening OH2 and disposed on the second light emitting layer EML-G, and a third electron transport region ETR-3 disposed in the third pixel opening OH3 and disposed on the third light emitting layer EML-B.

[0129] Figure 5 An embodiment is shown in which the electron transport region ETR is provided in the form of a plurality of patterns spaced apart from each other and the first electron transport region ETR-1, the second electron transport region ETR-2 and the third electron transport region ETR-3 are respectively arranged in the first pixel opening OH1, the second pixel opening OH2 and the third pixel opening OH3, but the embodiments of the present invention are not limited thereto, and the electron transport region ETR may be provided as a common layer, and the first electron transport region ETR-1, the second electron transport region ETR-2 and the third electron transport region ETR-3 may be distinguished in the common layer or defined by part of the common layer.

[0130] The second electrode EL2 may be disposed on the electron transport region ETR. The second electrode EL2 of the first light-emitting element ED-1, the second electrode EL2 of the second light-emitting element ED-2, and the second electrode EL2 of the third light-emitting element ED-3 may be connected to each other and provided in a single shape or integrally formed with each other as a single and indivisible part. That is, the second electrode EL2 may be provided in the form of a common layer. In an embodiment, the second electrode EL2 may be a cathode.

[0131] The encapsulation layer TFE may cover the light emitting elements ED-1, ED-2, and ED-3, thereby encapsulating the light emitting elements ED-1, ED-2, and ED-3. The encapsulation layer TFE is disposed on the second electrode EL2, and may be disposed to fill the pixel openings OH1, OH2, and OH3.

[0132] The encapsulation layer TFE may have a multilayer structure in which an inorganic layer / organic layer is alternately stacked. In an embodiment, for example, the encapsulation layer TFE may have a structure of an inorganic layer / organic layer / inorganic layer. The inorganic layer may protect the light-emitting elements ED-1, ED-2, and ED-3 from external moisture, and the organic layer may effectively prevent trace defects of the light-emitting elements ED-1, ED-2, and ED-3 caused by foreign substances introduced during the manufacturing process.

[0133] In the embodiment, the optical member PP may include a second base layer BS2 and a color filter layer CFL. That is, the display module DM according to the embodiment may include a color filter layer CFL disposed on the light emitting elements ED-1, ED-2 and ED-3 of the display panel DP.

[0134] The second base layer BS2 may be a member that provides a base surface on which a color filter layer CFL, etc. is disposed. The second base layer BS2 may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments of the present invention are not limited thereto, and the second base layer BS2 may be an inorganic layer, an organic layer, or a composite material layer.

[0135] The color filter layer CFL may include a light blocking portion BM and a color filter CF. The color filter CF may include a plurality of color filters CF-R, CF-G, and CF-B. That is, the color filter layer CFL may include a first color filter CF-R that transmits a first light, a second color filter CF-G that transmits a second light, and a third color filter CF-B that transmits a third light.

[0136] Each of the color filters CF-B, CF-G, and CF-R may include a polymer photosensitive resin and a pigment or dye. The first color filter CF-R may include a red pigment or a red dye, the second color filter CF-G may include a green pigment or a green dye, and the third color filter CF-B may include a blue pigment or a blue dye. However, the embodiments of the present invention are not limited thereto, and the third color filter CF-B may not include a pigment or a dye.

[0137] The light blocking portion BM may be a black matrix. The light blocking portion BM may be formed by including an organic light blocking material or an inorganic light blocking material containing a black pigment or a black dye. The light blocking portion BM may effectively prevent a light leakage phenomenon and may separate or define a boundary between adjacent color filters among the color filters CF-B, CF-G, and CF-R.

[0138] The color filter layer CFL may further include a buffer layer BFL. In an embodiment, for example, the buffer layer BFL may be a protective layer for protecting the color filters CF-R, CF-G, and CF-B. The buffer layer BFL may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) The buffer layer BFL may be formed or defined by a single layer or a plurality of layers.

[0139] In an embodiment, Figure 5 As shown in , the third color filter CF-B of the color filter layer CFL may partially overlap with the first color filter CF-R and the second color filter CF-G, and may completely overlap with the peripheral area NPXA, but the embodiments of the present invention are not limited thereto. In an embodiment, for example, the first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may be distinguished by the light blocking portion BM, and the first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may not overlap with each other. In an embodiment, the first color filter CF-R, the second color filter CF-G, and the third color filter CF-B may be arranged to correspond to (or overlap) the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, respectively. According to another embodiment, the color filter layer CFL may be omitted.

[0140] Figure 5 An embodiment of the optical member PP is shown. According to another embodiment, the optical member PP may include a polarizing layer (not shown). The polarizing layer (not shown) may block external light provided to the display panel DP from the outside. In an embodiment, the polarizing layer (not shown) may reduce reflected light generated in the display panel DP by the external light.

[0141] The polarization layer (not shown) may be a circular polarizer with an anti-reflection function, or the polarization layer (not shown) may include a linear polarizer and a λ / 4 phase retarder. In an embodiment, the polarization layer (not shown) may be disposed on the second base layer BS2 and exposed, or the polarization layer (not shown) may be disposed in a lower portion of the second base layer BS2.

[0142] Figure 6 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention. Fig. 7A and Figure 7B is an enlarged cross-sectional view of a light emitting element according to an embodiment of the present invention. Figure 6A region of an embodiment of the display panel DP is shown, in which region one transistor TR and one light emitting element ED are provided in a pixel of the display panel DP. Figure 6 A light emitting element ED shown in FIG. Figure 5 It corresponds to one of the first light emitting element ED-1, the second light emitting element ED-2 and the third light emitting element ED-3 shown in FIG. Fig. 7A and Figure 7B They are schematically shown Figure 5 The first light emitting element ED-1 and the second light emitting element ED-2 among the light emitting elements ED-1, ED-2 and ED-3 shown in FIG. The same / similar reference numerals are used to refer to Figures 1 to 5 The same / similar components are described herein, and any repeated detailed description thereof will be omitted or simplified.

[0143] Reference Figure 6 and Figure 7B In an embodiment, the circuit layer DP-CL may include a buffer layer BFL, a transistor TR, a connection signal line SCL, an upper electrode UE, connection electrodes CNE1 and CNE2, and a plurality of insulating layers 10 to 60. The plurality of insulating layers 10 to 60 may include first to sixth insulating layers 10 to 60 sequentially stacked on the buffer layer BFL. Each of the first to sixth insulating layers 10 to 60 may be an inorganic layer or an organic layer.

[0144] The transistor TR may include a semiconductor pattern including a source region Sa, an active region Aa, and a drain region Da, and a gate electrode Ga. According to an embodiment, the semiconductor pattern of the transistor TR may include an oxide semiconductor. The semiconductor pattern may include a transparent conductive oxide (TCO), such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO x ) or indium oxide (In 2 O 3 ) etc. Zinc oxide (ZnO x ) can be zinc oxide (ZnO) and / or zinc peroxide (ZnO 2 ).

[0145] The oxide semiconductor may include a plurality of regions that are distinguished from each other based on whether the transparent conductive oxide has been reduced. The region in which the transparent conductive oxide has been reduced (hereinafter, referred to as the reduction region) has a higher conductivity than the region in which the transparent conductive oxide has not been reduced (hereinafter, referred to as the non-reduction region). The reduction region has a greater hydrogen concentration than the non-reduction region, and the reduction region is basically used as the source / drain or signal line of the transistor TR. The non-reduction region may basically correspond to the active region Aa (or channel region) of the transistor TR. That is, a partial region of the semiconductor pattern may be the active region Aa, and another partial region of the semiconductor pattern may be the source region Sa and the drain region Da. The source region Sa and the drain region Da may extend in opposite directions, and the active region Aa is between the source region Sa and the drain region Da. That is, the active region Aa may be disposed between the source region Sa and the drain region Da.

[0146] The connection signal line SCL may be formed by a semiconductor pattern (or defined by a portion of a semiconductor pattern), and may be disposed in the same layer as the source region Sa, the active region Aa, and the drain region Da of the transistor TR (or disposed directly on the same layer as the source region Sa, the active region Aa, and the drain region Da of the transistor TR). According to an embodiment, the connection signal line SCL may be electrically connected to the drain region Da of the transistor TR on a plane.

[0147] The first insulating layer 10 may cover the semiconductor pattern of the circuit layer DP-CL. The gate electrode Ga may be disposed on the first insulating layer 10. The gate electrode Ga may overlap the active area Aa. The gate electrode Ga may be used as a mask in a process of doping the semiconductor pattern. The upper electrode UE may be disposed on the second insulating layer 20. The upper electrode UE may overlap the gate electrode Ga.

[0148] The first connection electrode CNE1 and the second connection electrode CNE2 may be disposed between the transistor TR and the light emitting element ED to electrically connect the transistor TR and the light emitting element ED to each other. The first connection electrode CNE1 may be disposed on the third insulating layer 30 and connected to the connection signal line SCL via a contact hole CNT-1 defined through the first insulating layer 10 to the third insulating layer 30. The second connection electrode CNE2 may be disposed on the fifth insulating layer 50 and connected to the first connection electrode CNE1 via a contact hole CNT-2 defined through the fourth insulating layer 40 and the fifth insulating layer 50.

[0149] The display element layer DP-EL may include a light emitting element ED and a pixel defining layer PDL. The light emitting element ED may include a barrier layer BRL, a hydrogen supply layer HSL, a first electrode EL1, a hole transport region HTR, a light emitting layer EML, an electron transport region ETR, and a second electrode EL2.

[0150] The barrier layer BRL may be disposed on the circuit layer DP-CL.The barrier layer BRL may be disposed on the uppermost insulating layer (ie, the sixth insulating layer 60 ) among the insulating layers 10 to 60 arranged in the circuit layer DP-CL.

[0151] In an embodiment, the barrier layer BRL may include a first layer L1 and a second layer L2 disposed on the first layer L1.

[0152] The first layer L1 may include a metal. In an embodiment, for example, the metal included in the first layer L1 may include aluminum (Al) or silver (Ag). The first layer L1 may be referred to as a reflective electrode.

[0153] In an embodiment, the thickness t1 of the first layer L1 may be approximately or greater. If the thickness t1 of the first layer L1 is less than about It may then be difficult to ensure desired reflectivity, and light emission efficiency may be reduced due to insufficient resonance of light in the light emitting element ED.

[0154] The second layer L2 may include a metal oxide. In an embodiment, for example, the metal oxide included in the second layer L2 may include aluminum oxide (Al x O y ). Due to the aluminum oxide (Al x O y ) has a large permeation reduction factor (PRF), so when the second layer L2 includes aluminum oxide (Al x O y ), the diffusion of hydrogen (for example, hydrogen impurities in the film) can be reduced by the second layer L2.

[0155] In an embodiment, the thickness t2 of the second layer L2 may be approximately To about If the thickness t2 of the second layer L2 is less than about Then the second layer L2 may have difficulty in blocking hydrogen diffusion, and if the thickness t2 of the second layer L2 is greater than about Then, it may be difficult to ensure a desired reflectivity due to a decrease in reflectivity, and light emission efficiency may be reduced due to insufficient resonance of light in the light emitting element ED.

[0156] Figure 6 An embodiment in which the barrier layer BRL is divided into the first layer L1 and the second layer L2 is shown, but the barrier layer BRL may be provided in a state in which the boundary of the layer including the metal and the layer including the metal oxide is not distinguished from each other. That is, the barrier layer BRL may be formed in the form of a single layer including the metal and the metal oxide, and at this time, the content of the metal oxide in the barrier layer BRL may gradually increase in the direction toward the light emitting layer EML.

[0157] The hydrogen supply layer HSL may be disposed on the second layer L2 of the barrier layer BRL. In an embodiment, the hydrogen supply layer HSL may include an inorganic material. In an embodiment, for example, the inorganic material included in the hydrogen supply layer HSL may include a material selected from silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) at least one of.

[0158] In an embodiment, the hydrogen supply layer HSL may include hydrogen. The gas injected in the process of forming the hydrogen supply layer HSL may include hydrogen, and the hydrogen in the injected gas may remain in the hydrogen supply layer HSL in the form of impurities after the process. Hereinafter, the hydrogen remaining in the hydrogen supply layer HSL is referred to as a hydrogen impurity.

[0159] In an embodiment, the thickness t3 of the hydrogen supply layer HSL may be approximately However, the embodiments of the present invention are not limited thereto, and the hydrogen supply layer HSL may be provided with an appropriate thickness in consideration of an appropriate resonance distance according to the wavelength of light emitted from the light emitting layer EML and / or the thickness of other layers in the light emitting element ED that affect the resonance distance, etc.

[0160] The first electrode EL1 may be disposed on the sixth insulating layer 60 and may cover the barrier layer BRL and the hydrogen supply layer HSL. The first electrode EL1 may contact the upper surface U-60 of the sixth insulating layer 60 exposed from the barrier layer BRL. The first electrode EL1 may be connected to the second connection electrode CNE2 via a contact hole CNT-3 defined through the sixth insulating layer 60. That is, the first electrode EL1 may be electrically connected to the transistor TR via the second connection electrode CNE2.

[0161] In an embodiment, the first electrode EL1 may include a transparent conductive oxide (TCO). In an embodiment, for example, the first electrode EL1 may include indium tin oxide (ITO) or indium zinc oxide (IZO), etc. The first electrode EL1 may be referred to as a transparent electrode. In an embodiment, the thickness of the first electrode EL1 may be about 1000 Å. To about within the range.

[0162] The pixel defining layer PDL may include a polymer resin or be formed of a polymer resin. In an embodiment, for example, the pixel defining layer PDL may be formed using a polyacrylate resin or a polyimide resin. In addition, in addition to the polymer resin, the pixel defining layer PDL may also be formed by using an inorganic substance. In an embodiment, the pixel defining layer PDL may be formed by using a light absorbing material, or may be formed by using a black pigment or a black dye. A black pixel defining layer may be realized by forming the pixel defining layer PDL using a black pigment or a black dye. When forming the pixel defining layer PDL, carbon black or the like may be used as a black pigment or a black dye, but embodiments of the present invention are not limited thereto.

[0163] In an embodiment, the pixel defining layer PDL may include or be formed of an inorganic material. In an embodiment, for example, the pixel defining layer PDL may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) etc. to form.

[0164] In an embodiment, the side surface S-PDL of the pixel defining layer PDL may be hydrophobic. That is, the side surface S-PDL of the pixel defining layer PDL defining the pixel opening OH may be hydrophobic. In an embodiment, for example, the pixel defining layer PDL itself may be formed by including a hydrophobic material, or a hydrophobic coating layer (not shown) may be included at least on the side surface S-PDL of the pixel defining layer PDL. The side surface S-PDL of the pixel defining layer PDL may be a region in contact with the hole transport region HTR, the light emitting layer EML, and the electron transport region ETR.

[0165] The hole transport region HTR may have a single-layer structure including a single layer including or formed of a single material, a single-layer structure including or formed of a plurality of different materials, or a multi-layer structure including or formed of a plurality of different materials. Figures 6 to 7B An embodiment is shown in which the hole transport region HTR includes a hole injection layer HIL and a hole transport layer HTL disposed on the hole injection layer HIL.

[0166] For example, the hole injection layer HIL may include a phthalocyanine compound such as copper phthalocyanine, N,N'-diphenyl-N,N'-di-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine (DNTPD), 4,4',4"-tris(3-methylphenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (TDATA), 4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine (2-TNATA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) )(PEDOT / PSS), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), polyaniline / camphorsulfonic acid (PANI / CSA), (polyaniline) / poly(4-styrenesulfonate) (PANI / PSS), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPD), triphenylamine-containing polyether ketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium salt, tetrakis(pentafluorophenyl)borate or dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanitrile (HAT-CN), etc.

[0167] The hole transport layer HTL may include common materials known in the art. For example, the hole transport layer HTL may also include carbazole derivatives such as N-phenylcarbazole and polyvinyl carbazole, fluorene derivatives, triphenylamine derivatives such as N,N'-di(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD) and 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPD), 4,4'-cyclohexyldi[N,N-di(4-methylphenyl)aniline] (TAPC), 4,4'-di[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl (HMTPD) or 1,3-di(N-carbazolyl)benzene (mCP), etc.

[0168] In addition to the hole injection layer HIL and the hole transport layer HTL, the hole transport region HTR may further include at least one selected from a hole buffer layer and an electron blocking layer. The hole buffer layer may increase the luminous efficiency by compensating the resonance distance according to the wavelength of the light emitted from the light emitting layer EML. As the material included in the hole buffer layer, a material that may be included in the hole transport region HTR may be used. The electron blocking layer is a layer for preventing electrons from being injected from the electron transport region ETR into the hole transport region HTR.

[0169] The electron transport region ETR may include at least one selected from a hole blocking layer, an electron transport layer, and an electron injection layer, but embodiments of the present invention are not limited thereto. Figures 6 to 7B An example is shown in which the electron transport region ETR is defined by a single layer and the single layer may be an electron transport layer.

[0170] In an embodiment, the electron transport region ETR may include a metal oxide. The metal oxide may include an oxide of a metal selected from at least one of silicon, aluminum, zinc, indium, gallium, yttrium, germanium, scandium, titanium, tantalum, hafnium, zirconium, cerium, molybdenum, nickel, chromium, iron, niobium, tungsten, tin, and copper, and a mixture thereof, but is not limited thereto.

[0171] In an embodiment, the metal oxide may include zinc oxide. The type of zinc oxide is not particularly limited, but may be, for example, ZnO, ZnMgO, or a combination thereof, and may be doped with Li or Y in addition to Mg. In addition, in addition to zinc oxide, TiO 2 、SiO 2 SnO 2 , WO 3 、 2 O 3 、BaTiO 3 、BaZrO 3 、ZrO 2 , HfO 2 、Al 2 O 3 , Y 2 O 3 or ZrSiO 4 etc. may be used as the inorganic material, but the embodiments of the present invention are not limited thereto.

[0172] The second electrode EL2 is disposed on the electron transport region ETR. In an embodiment, the second electrode EL2 may be a transmissive electrode, a semi-transmissive reflective electrode, or a reflective electrode. In an embodiment where the second electrode EL2 is a transmissive electrode, the second electrode EL2 may include a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO), or may be formed of a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO).

[0173] In an embodiment where the second electrode EL2 is a semi-transmissive reflective electrode or a reflective electrode, the second electrode EL2 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of silver and magnesium), or a material having a multilayer structure such as LiF / Ca or LiF / Al. Alternatively, the second electrode EL2 may have a multilayer structure including a reflective film or a semi-transmissive reflective film, each layer of which contains at least one of the materials listed above, and a transparent conductive film, the transparent conductive film including indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like, or formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like.

[0174] Hydrogen impurities in the hydrogen supply layer HSL may diffuse into other layers disposed on the upper side or lower side of the hydrogen supply layer HSL. According to an embodiment of the present invention, hydrogen impurities in the hydrogen supply layer HSL may diffuse into a portion in which the light-emitting layer EML and / or the electron transport region ETR are disposed. When hydrogen is provided in the light-emitting layer EML including quantum dots QD, the occurrence of defects in the light-emitting layer EML can be effectively prevented or substantially reduced. In addition, when hydrogen is provided in the electron transport region ETR including a metal oxide, the occurrence of defects in the electron transport region ETR can be effectively prevented or substantially reduced. Therefore, in an embodiment of the present invention, the luminous efficiency and / or luminous lifetime of the light-emitting element ED can be improved by arranging or providing the hydrogen supply layer HSL in the light-emitting element ED.

[0175] In addition, according to an embodiment of the present invention, by disposing a barrier layer BRL in the lower part of the hydrogen supply layer HSL, hydrogen impurities can be effectively prevented from diffusing toward the barrier layer BRL in a downward direction. Therefore, hydrogen impurities can be effectively prevented from diffusing into the circuit layer DP-CL. In such an embodiment, since the semiconductor pattern of the transistor TR includes an oxide semiconductor, when hydrogen impurities diffuse into the circuit layer DP-CL (in particular, when diffused into the transistor TR), the properties of the transistor TR (such as the threshold voltage of the transistor TR) may change. According to an embodiment of the present invention, by disposing or providing a barrier layer BRL in the lower part of the hydrogen supply layer HSL, hydrogen impurities can be effectively prevented from diffusing into the transistor TR. Therefore, display defects due to changes in the properties of the transistor TR can be effectively prevented. That is, a display panel DP with reduced display defects can be provided.

[0176] In an embodiment, Fig. 7A As shown in , the first light emitting element ED-1 may include a first light emitting layer EML-R including a first quantum dot QD1, and as Figure 7B As shown in , the second light emitting element ED-2 may include a second light emitting layer EML-G including a second quantum dot QD2. The size (eg, diameter) of the first quantum dot QD1 and the size (eg, diameter) of the second quantum dot QD2 may be different from each other.

[0177] Reference Fig. 7A and Figure 7B In an embodiment, the resonance distance RD-1 of the first light-emitting element ED-1 may be defined as a distance between an upper surface U-L1 of the first layer L1-1 corresponding to the reflective electrode of the first barrier layer BRL-1 and a lower surface L-EL2 of the second electrode EL2. The resonance distance RD-2 of the second light-emitting element ED-2 may be defined as a distance between an upper surface U-L1 of the first layer L1-2 corresponding to the reflective electrode of the second barrier layer BRL-2 and a lower surface L-EL2 of the second electrode EL2. The upper surfaces U-L1 of the first layers L1-1 and L1-2 may be surfaces in contact with the second layers L2-1 and L2-2. The lower surface L-EL2 of the second electrode EL2 may be a surface in contact with the electron transport regions ETR-1 and ETR-2. Therefore, the resonance distance RD-1 of the first light-emitting element ED-1 can be defined as the sum of the thickness t2 of the second layer L2-1, the thickness t3 of the first hydrogen supply layer HSL-1, the thickness t4 of the first electrode EL1, the thickness t5-1 of the first hole transport region HTR-1, the thickness of the first light-emitting layer EML-R, and the thickness of the first electron transport region ETR-1. The resonance distance RD-2 of the second light-emitting element ED-2 can be defined as the sum of the thickness t2 of the second layer L2-2, the thickness t3 of the second hydrogen supply layer HSL-2, the thickness t4 of the first electrode EL1, the thickness t5-2 of the second hole transport region HTR-2, the thickness of the second light-emitting layer EML-G, and the thickness of the second electron transport region ETR-2.

[0178] In an embodiment, the resonance distance RD-1 of the first light emitting element ED-1 and the resonance distance RD-2 of the second light emitting element ED-2 may be different from each other. The resonance distance RD-1 of the first light emitting element ED-1 and the resonance distance RD-2 of the second light emitting element ED-2 may be set to appropriate distances by the thickness t5-1 of the first hole transport region HTR-1 and the thickness t5-2 of the second hole transport region HTR-2, respectively. The thickness t5-1 of the first hole transport region HTR-1 and the thickness t5-2 of the second hole transport region HTR-2 may be different from each other.

[0179] For example, in the hole transport regions HTR-1 and HTR-2, the hole injection layers HIL-1 and HIL-2 may be disposed at the lowermost side, and the resonance distance RD-1 of the first light emitting element ED-1 and the resonance distance RD-2 of the second light emitting element ED-2 may be set to appropriate distances by the thickness T-1 of the hole injection layer HIL-1 and the thickness T-2 of the hole injection layer HIL-2, respectively. That is, the thickness T-1 of the hole injection layer HIL-1 in the first hole transport region HTR-1 and the thickness T-2 of the hole injection layer HIL-2 in the second hole transport region HTR-2 may be different from each other.

[0180] In the embodiment, by disposing the hydrogen supply layers HSL-1 and HSL-2 on the reflective electrode (ie, the first layer L1 (see Figure 6 )) and the second electrode EL2, the resonance distances RD-1 and RD-2 can be ensured by the thickness t3 of the hydrogen supply layers HSL-1 and HSL-2.

[0181] In the case where the hydrogen supply layer is not provided between the reflective electrode and the second electrode, it is desirable that the hole transport region is provided to be as thick as the thickness of the hydrogen supply layer. Since the hole transport region is generally formed by an inkjet printing process, it is desirable to perform several inkjet printing processes to form a thicker hole transport region. Since the inkjet printing process includes a process of injecting a solution and then evaporating the solvent, the structure formed by the inkjet printing method may have a variation in thickness. Specifically, when the inkjet printing process is performed several times, the variation in thickness may be more significant. Therefore, when a thick hole transport region is provided, the resonance distance of the light-emitting element may also have a deviation, so that the luminous efficiency may be reduced.

[0182] According to an embodiment, the hydrogen supply layers HSL-1 and HSL-2 may be formed by a deposition method, and thus may be relatively easily or uniformly formed to be thick, and may have a relatively small deviation in thickness compared to the hole transport region HTR provided by an inkjet printing method. Therefore, by arranging the hydrogen supply layers HSL-1 and HSL-2 formed by a deposition method between the reflective electrode (i.e., the first layer L1) and the second electrode EL2, a relatively thin hole transport region HTR may be provided. Since the desired or predetermined resonance distances RD-1 and RD-2 may be provided more accurately, the luminous efficiency may be improved. Therefore, light-emitting elements ED-1 and ED-2 having improved luminous efficiency and lifespan may be provided.

[0183] Figure 8 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention. Figures 1 to 7B The same / similar components are described, and any repeated detailed description thereof will be omitted, and the differences will be mainly described.

[0184] Reference Figure 8 In an embodiment, the light emitting element EDa of the display panel DPa may include a barrier layer BRLa, a hydrogen supply layer HSL, a first electrode EL1a, a hole transport region HTR, a light emitting layer EML, an electron transport region ETR, and a second electrode EL2.

[0185] In an embodiment, the barrier layer BRLa may be connected to the second connection electrode CNE2 via a contact hole CNT- 3 defined through the sixth insulating layer 60 .

[0186] The first electrode EL1a covers the hydrogen supply layer HSL and may be in contact with the upper surface U-BRLa of the barrier layer BRLa exposed from the hydrogen supply layer HSL. Thus, the first electrode EL1a may be electrically connected to the second connection electrode CNE2 via the barrier layer BRLa.

[0187] In an embodiment, the barrier layer BRLa may include a first layer L1a including a metal and a second layer L2a disposed on the first layer L1a and including a metal oxide. In such an embodiment, an upper surface U-BRLa of the barrier layer BRLa may correspond to an upper surface of the second layer L2a.

[0188] In an embodiment, Figure 8 As shown in FIG. 1 , the first electrode EL1a may not be in contact with the sixth insulating layer 60. However, the embodiment of the present invention is not limited thereto, and the first electrode EL1a may be as shown in FIG. Figure 5 As shown in FIG. , it is arranged to be in contact not only with the upper surface U-BRLa of the barrier layer BRLa but also with the upper surface U-60 of the sixth insulating layer 60 .

[0189] Fig. 9 is an enlarged cross-sectional view of a display panel according to an embodiment of the present invention. Figures 1 to 7B The same / similar components are described, and any repeated detailed description thereof will be omitted, and the differences will be mainly described.

[0190] Reference Fig. 9 In an embodiment, the light emitting element EDb of the display panel DPb may include an additional barrier layer BRL-A, a barrier layer BRL, a hydrogen supply layer HSL, a first electrode EL1, a hole transport region HTR, a light emitting layer EML, an electron transport region ETR, and a second electrode EL2.

[0191] In such an embodiment, the light emitting element EDb may further include an additional barrier layer BRL-A disposed between the circuit layer DP-CL and the barrier layer BRL. The additional barrier layer BRL-A may be disposed between the sixth insulating layer 60 and the barrier layer BRL. The additional barrier layer BRL-A may be disposed with respect to the pixel regions (pixel regions PXA-R, PXA-G, PXA-B, see Figure 5 ) corresponding to, and can be provided in the form of multiple patterns.

[0192] The additional barrier layer BRL-A may improve adhesion between the sixth insulating layer 60 and the barrier layer BRL. In an embodiment, the additional barrier layer BRL-A may include a transparent conductive oxide (TCO).

[0193] Fig.10 It is along Figure 4 A cross-sectional view of a display module according to an embodiment of the present invention taken along line II-II'. Figures 1 to 7B The same / similar components are described, and any repeated detailed description thereof will be omitted, and the differences will be mainly described.

[0194] Reference Fig.10 , the display module DM' according to the embodiment may include a display panel DP' and an optical member PP, and the display panel DP' may include light emitting elements ED-1', ED-2', and ED-3'.

[0195] Each of the light emitting elements ED-1', ED-2' and ED-3' may include a barrier layer BRL, a hydrogen supply layer HSL, a first electrode EL1', an electron transport region ETR', a light emitting layer EML, a hole transport region HTR', and a second electrode EL2'.

[0196] In such an embodiment, the first electrode EL1' may be a cathode and the second electrode EL2' may be an anode. The electron transport region ETR' may be disposed between the first electrode EL1' and the light emitting layer EML, and the hole transport region HTR' may be disposed between the light emitting layer EML and the second electrode EL2'.

[0197] In the first light-emitting element ED-1', the first electron transport region ETR-1' may be disposed between the first electrode EL1' and the first light-emitting layer EML-R, and the first hole transport region HTR-1' may be disposed between the first light-emitting layer EML-R and the second electrode EL2'. In the second light-emitting element ED-2', the second electron transport region ETR-2' may be disposed between the first electrode EL1' and the second light-emitting layer EML-G, and the second hole transport region HTR-2' may be disposed between the second light-emitting layer EML-G and the second electrode EL2'. In the third light-emitting element ED-3', the third electron transport region ETR-3' may be disposed between the first electrode EL1' and the third light-emitting layer EML-B, and the third hole transport region HTR-3' may be disposed between the third light-emitting layer EML-B and the second electrode EL2'.

[0198] In such an embodiment, the first electron transport region ETR-1′, the second electron transport region ETR-2′, and the third electron transport region ETR-3′ may have different thicknesses from each other.

[0199] Fig.10 An embodiment is shown in which the electron transport region ETR' is provided in the form of a plurality of patterns spaced apart from each other and the first hole transport region HTR-1', the second hole transport region HTR-2' and the third hole transport region HTR-3' are respectively arranged in the first pixel opening OH1, the second pixel opening OH2 and the third pixel opening OH3, but the embodiments of the present invention are not limited thereto, and the hole transport region HTR' may be provided as a common layer, and the first hole transport region HTR-1', the second hole transport region HTR-2' and the third hole transport region HTR-3' may be distinguished or defined by portions of the common layer.

[0200] Fig.11A and Fig. 11B is an enlarged cross-sectional view of a light emitting element according to an embodiment of the present invention. Fig.11A and Fig. 11B They are schematically shown Fig.10 The first light emitting element ED-1' and the second light emitting element ED-2' among the light emitting elements ED-1', ED-2' and ED-3' shown in FIG. The same / similar reference numerals are used to refer to Figures 1 to 7B The same / similar components are described, and any repeated detailed description thereof will be omitted, and the differences will be mainly described.

[0201] Reference Fig.11A and Fig. 11B, the electron transport regions ETR-1′ and ETR-2′ according to the embodiment may include sequentially stacked electron injection layers EIL-1′ and electron transport layers ETL-1′ and sequentially stacked electron injection layers EIL-2′ and electron transport layers ETL-2′, respectively.

[0202] In an embodiment, the electron injection layers EIL-1' and EIL-2' may have higher conductivity than the electron transport layers ETL-1' and ETL-2'. The material included in the electron injection layers EIL-1' and EIL-2' may have higher conductivity than the material included in the electron transport layers ETL-1' and ETL-2'. In an embodiment, for example, the electron injection layers EIL-1' and EIL-2' may include ZnO, and the electron transport layers ETL-1' and ETL-2' may include ZnMgO. However, this is merely an example, and embodiments of the present invention are not limited thereto.

[0203] The resonance distance RD-1' of the first light-emitting element ED-1' may be defined as the distance between the upper surface U-L1 of the first layer L1-1 corresponding to the reflective electrode of the first barrier layer BRL-1 and the lower surface L-EL2' of the second electrode EL2'. The resonance distance RD-2' of the second light-emitting element ED-2' may be defined as the distance between the upper surface U-L1 of the first layer L1-2 corresponding to the reflective electrode of the second barrier layer BRL-2 and the lower surface L-EL2' of the second electrode EL2'. The upper surfaces U-L1 of the first layers L1-1 and L1-2 may be surfaces in contact with the second layers L2-1 and L2-2. The lower surface L-EL2' of the second electrode EL2' may be surfaces in contact with the hole transport regions HTR-1' and HTR-2'. Therefore, the resonance distance RD-1' of the first light-emitting element ED-1' may be defined as the sum of the thickness t2 of the second layer L2-1, the thickness t3 of the first hydrogen supply layer HSL-1, the thickness t4' of the first electrode EL1', the thickness t5-1' of the first electron transport region ETR-1', the thickness of the first light-emitting layer EML-R, and the thickness of the first hole transport region HTR-1'. The resonance distance RD-2' of the second light-emitting element ED-2' may be defined as the sum of the thickness t2 of the second layer L2-2, the thickness t3 of the second hydrogen supply layer HSL-2, the thickness t4' of the first electrode EL1', the thickness t5-2' of the second electron transport region ETR-2', the thickness of the second light-emitting layer EML-G, and the thickness of the second hole transport region HTR-2'.

[0204] The resonance distance RD-1' of the first light emitting element ED-1' and the resonance distance RD-2' of the second light emitting element ED-2' may be different from each other. In an embodiment, the resonance distance RD-1' of the first light emitting element ED-1' and the resonance distance RD-2' of the second light emitting element ED-2' may be set to an appropriate distance by the thickness t5-1' of the first electron transport region ETR-1' and the thickness t5-2' of the second electron transport region ETR-2', respectively. The thickness t5-1' of the first electron transport region ETR-1' and the thickness t5-2' of the second electron transport region ETR-2' may be different from each other.

[0205] For example, in the electron transport regions ETR-1' and ETR-2', the electron injection layers EIL-1' and EIL-2' may be disposed at the lowermost side, and the resonance distance RD-1' of the first light emitting element ED-1' and the resonance distance RD-2' of the second light emitting element ED-2' may be set to appropriate distances by the thickness T-1' of the electron injection layer EIL-1' and the thickness T-2' of the electron injection layer EIL-2', respectively. That is, the thickness T-1' of the electron injection layer EIL-1' in the first electron transport region ETR-1' and the thickness T-2' of the electron injection layer EIL-2' in the second electron transport region ETR-2' may be different from each other.

[0206] In such an embodiment, by placing the hydrogen supply layers HSL-1 and HSL-2 on the reflective electrode (ie, the first layer L1 (see Figure 6 Between the hydrogen supply layer HSL-1 and the second electrode EL2', the resonance distances RD-1' and RD-2' may be ensured by the thickness t3 of the hydrogen supply layer HSL-1 and the thickness t3 of HSL-2.

[0207] In the case where the hydrogen supply layer is not provided between the reflective electrode and the second electrode, it is desirable that the electron transport region is provided to be as thick as the thickness of the hydrogen supply layer. Since the electron transport region is generally formed by an inkjet printing process, when a thick electron transport region is provided, a change in thickness may become significant. Therefore, the resonance distance of the light emitting element may also have a deviation, so that the light emitting efficiency may not be improved.

[0208] According to the embodiment, by disposing the hydrogen supply layers HSL-1 and HSL-2 formed by a deposition method between the reflective electrode (ie, the first layer L1) and the second electrode EL2', a relatively thin electron transport region ETR' can be provided, so that the required resonance distances RD-1' and RD-2' can be provided more accurately. Therefore, light emitting elements ED-1' and ED-2' with improved luminous efficiency and lifespan can be provided.

[0209] FIG. 12A to FIG. 12His a cross-sectional view schematically showing a process of a method for manufacturing a light emitting element according to an embodiment of the present invention. FIG. 12A to FIG. 12H , an embodiment of a method for manufacturing a light emitting element ED will be described in detail.

[0210] like Fig. 12A and Fig. 12B As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H ) may include forming an initial barrier layer BRL-I. The formation of the initial barrier layer BRL-I may include depositing a metal on the circuit layer DP-CL.

[0211] In an embodiment, Fig. 12B As shown in , the initial barrier layer BRL-I may include a first initial layer L1-I including a metal and a second initial layer L2-I including a metal oxide. In an embodiment, the second initial layer L2-I may include an oxide of the metal included in the first initial layer L1-I. In an embodiment, for example, the first initial layer L1-I may include aluminum (Al), and the second initial layer L2-I may be a layer formed by oxidizing the interface of the first initial layer L1-I, and the second initial layer L2-I may include aluminum oxide (Al x Oy).

[0212] According to another embodiment of the present invention, in the formation of the initial barrier layer BRL-I, the first initial layer L1-I and the second initial layer L2-I can be formed by separate deposition processes, and in such an embodiment, the first initial layer L1-I can include a first metal, and the second initial layer L2-I can include an oxide of a second metal different from the first metal.

[0213] like Fig. 12C As shown in , the formation of the initial barrier layer BRL-I according to the embodiment may also include increasing the thickness of the second initial layer L2-I'. After the metal is deposited, a separate heat treatment process or a plasma treatment process may be performed. For example, the plasma treatment process may be performed using O 2 Plasma surface treatment process.

[0214] The second initial layer L2-I′ after the heat treatment process or the plasma treatment process may become thicker than the second initial layer L2-I before the heat treatment process or the plasma treatment process (see Fig. 12B As a result, the second layer L2 (see, for example, Fig.12H ) can more reliably or effectively block the diffusion of hydrogen impurities into the lower side of the second layer L2.

[0215] like Fig.12D As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H ) may include forming an initial hydrogen supply layer HSL-I. The formation of the initial hydrogen supply layer HSL-I may include depositing an inorganic material on the initial barrier layer BRL-I.

[0216] In the formation of the initial hydrogen supply layer HSL-I, the deposition of the inorganic material may be performed by a chemical vapor deposition (CVD) method. According to an embodiment, the raw material gas injected during the chemical vapor deposition may include hydrogen. In an embodiment, for example, SiH may be injected. 4 Gas and NH 4 The gas is used to deposit SiN by chemical vapor deposition. x The initial hydrogen supply layer HSL-I is formed by injecting an inorganic film. However, the embodiments of the present invention are not limited thereto. In the embodiments, for example, SiH 4 Gas and N 2 O gas to deposit SiO by chemical vapor deposition x Inorganic film, or SiH 4 Gas, N 2 O gas and N 2 Gas to deposit SiO by chemical vapor deposition x N y The inorganic film is formed to form an initial hydrogen supply layer. The deposition of the inorganic material can be performed by a plasma enhanced chemical vapor deposition (PECVD) method among chemical vapor deposition methods.

[0217] like Fig.12D and Fig.12E As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H ) may include forming a barrier layer BRL and a hydrogen supply layer HSL. In an embodiment, the barrier layer BRL may be formed from an initial barrier layer BRL-I (e.g., the barrier layer BRL may be formed by patterning the initial barrier layer BRL-I). In such an embodiment, the hydrogen supply layer HSL may be formed from an initial hydrogen supply layer HSL-I (e.g., the hydrogen supply layer HSL may be formed by patterning the initial hydrogen supply layer HSL-I).

[0218] In an embodiment, the patterning process of the initial barrier layer BRL-I and the patterning process of the initial hydrogen supply layer HSL-I may be performed by a photolithography process. However, the patterning process of the initial barrier layer BRL-I and the patterning process of the initial hydrogen supply layer HSL-I are not limited to any one embodiment.

[0219] The patterning process of the preliminary barrier layer BRL-I and the patterning process of the preliminary hydrogen supply layer HSL-I may be performed simultaneously or separately.

[0220] Optionally, after forming the initial barrier layer BRL-I and before forming the initial hydrogen supply layer HSL-I, the initial barrier layer BRL-I may be patterned to form a barrier layer BRL from the initial barrier layer BRL-I. In this process, the initial hydrogen supply layer HSL-I may be formed on the patterned barrier layer BRL.

[0221] like Fig.12E As shown in FIG. 1 , since a gas including hydrogen is injected in a process of forming the initial hydrogen supply layer HSL-I, hydrogen remains in the finally formed hydrogen supply layer HSL, so that hydrogen impurities may be included in the hydrogen supply layer HSL.

[0222] Afterwards, if Fig.12F As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H ) may include forming a first electrode EL1.

[0223] The first electrode EL1 may be formed by depositing a transparent conductive material on the circuit layer DP-CL. The first electrode EL1 may be formed to cover the hydrogen supply layer HSL and the barrier layer BRL. However, the embodiments of the present invention are not limited thereto, and according to embodiments, the first electrode EL1 may be formed to cover the hydrogen supply layer HSL and to contact the upper surface of the barrier layer BRL exposed from the hydrogen supply layer HSL.

[0224] The pixel defining layer PDL may be formed after forming the first electrode EL1. The pixel defining layer PDL may be disposed on the circuit layer DP-CL and formed to expose a portion of the first electrode EL1. In such an embodiment, a pixel opening OH exposing a portion of the first electrode EL1 may be formed by or through the pixel defining layer PDL.

[0225] Afterwards, if Fig.12F and Figure 12G As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H ) may include forming a functional layer. In the specification, the functional layer may correspond to the hole transport region HTR or the electron transport region ETR. The formation of the functional layer may be performed by an inkjet printing method.

[0226] According to the method for manufacturing the light emitting element ED (see Fig.12H The method of forming the hole transport region HTR on the first electrode EL1 may include forming a hole transport region HTR on the first electrode EL1, and the formation of the hole transport region HTR may include forming a hole injection layer HIL and forming a hole transport layer HTL. The formation of the hole injection layer HIL and the formation of the hole transport layer HTL may both be performed by an inkjet printing method. Fig.12F The process of forming the hole injection layer HIL is schematically shown.

[0227] In the embodiment, for each light emitting element ED (see Fig.12H ), a hole injection layer HIL may be formed with an appropriate thickness to provide each light emitting element ED (see Fig.12H ) required resonance distance. According to the embodiment, by Fig.12H ) in the first layer L1 corresponding to the reflective electrode and the second electrode EL2 (see Fig.12H ) is provided between the hydrogen supply layer HSL, and the hole injection layer HIL may be provided to be as thin as the hydrogen supply layer HSL. According to an embodiment, the hole injection layer HIL may be formed by a single inkjet printing process. Compared with the case where a thick hole injection layer HIL is formed by performing several inkjet printing processes, the deviation in thickness may be reduced. Therefore, in an embodiment of the present invention, since a desired or predetermined resonance distance can be provided more accurately, luminous efficiency is improved.

[0228] Fig.12F and Figure 12G An embodiment of forming the hole transport region HTR including the hole injection layer HIL and the hole transport layer HTL is shown, but embodiments of the present invention are not limited thereto, and the formation of the hole transport region HTR may further include forming a hole buffer layer and / or forming an electron blocking layer.

[0229] Afterwards, if Figure 12G As shown in FIG. 1 , a method for manufacturing a light emitting element ED (see FIG. 1 ) according to an embodiment Fig.12H The method of forming the light emitting layer EML and forming the electron transport region ETR may include forming the light emitting layer EML and forming the electron transport region ETR. Both the forming of the light emitting layer EML and the forming of the electron transport region ETR may be performed by an inkjet printing process.

[0230] Figure 12G An example in which a single layer of the electron transport region ETR is formed is shown, but the formation of the electron transport region ETR may include at least one selected from the group consisting of forming a hole blocking layer, forming an electron transport layer, and forming an electron injection layer.

[0231] Fig.12F and Figure 12G An embodiment in which a hole transport region HTR is formed between the first electrode EL1 and the light emitting layer EML and an electron transport region ETR is formed on the light emitting layer EML is shown, but the embodiments of the present invention are not limited thereto, and as Fig.10 As shown in FIG, an electron transport region ETR' may be formed between the first electrode EL1' and the light emitting layer EML, and a hole transport region HTR' may be formed on the light emitting layer EML. In this case, the light emitting element ED' (see FIG. Fig.10 ) can be determined by the electron transport region ETR' (see Fig.10 ) thickness control. For example, the light emitting element ED' (see Fig.10 ) can be determined by the electron transport region ETR′ (see Fig.10 ) in the electron injection layers EIL-1' and EIL-2' (see Fig.11A and Fig. 11B ) to control the thickness.

[0232] Afterwards, if Fig.12H As shown in , the method for manufacturing a light emitting element ED according to an embodiment may include forming a second electrode EL2. The formation of the second electrode EL2 may be performed by a deposition method. As a result, a light emitting element ED including a barrier layer BRL, a hydrogen supply layer HSL, a first electrode EL1, a hole transport region HTR, a light emitting layer EML, an electron transport region ETR, and a second electrode EL2 may be formed.

[0233] According to an embodiment of the present invention, the light-emitting element includes a hydrogen supply layer, so that a light-emitting element with improved luminous efficiency and life, a display panel including the light-emitting element, and a method for manufacturing the light-emitting element can be provided. In addition, according to an embodiment of the present invention, by providing a hydrogen supply layer on a reflective electrode, a light-emitting element with improved process reliability, a display panel including the light-emitting element, and a method for manufacturing the light-emitting element can be provided. In addition, according to an embodiment of the present invention, by allowing the light-emitting element to include a barrier layer disposed on the lower side of the hydrogen supply layer, changes in the properties of transistors in a pixel driving circuit can be significantly reduced or effectively prevented, and therefore, a display panel with reduced display defects can be provided.

[0234] The present invention should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art.

[0235] While the invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A display panel, in, The display panel comprises: Base layer; a circuit layer, disposed on the substrate layer; and A light emitting element is disposed on the circuit layer, wherein the light emitting element comprises: Barrier layers, including metals and metal oxides; a hydrogen supply layer disposed on the barrier layer and comprising an inorganic material; a first electrode disposed on the hydrogen supply layer; a light-emitting layer disposed on the first electrode and comprising quantum dots; and The second electrode is arranged on the light-emitting layer.

2. The display panel according to claim 1, in, The hydrogen supply layer includes hydrogen impurities, wherein the hydrogen impurities diffuse into the light emitting layer.

3. The display panel according to claim 1, in, The hydrogen supply layer includes at least one selected from silicon nitride, silicon oxide, and silicon oxynitride.

4. The display panel according to claim 1, in, The thickness of the hydrogen supply layer is 2000 angstroms or less.

5. The display panel according to claim 1, in, The barrier layer comprises: A first layer, comprising metal; and The second layer is disposed on the first layer and includes a metal oxide.

6. The display panel according to claim 5, in, The resonance distance of the light emitting element is defined as the distance between the upper surface of the first layer and the lower surface of the second electrode.

7. The display panel according to claim 5, in: The first layer has a thickness of 500 angstroms or greater; and The thickness of the second layer is in the range of 50 angstroms to 100 angstroms.

8. The display panel according to claim 1, in, The content of the metal oxide in the barrier layer gradually increases in a direction toward the light-emitting layer.

9. The display panel according to claim 1, in, The metal oxide includes aluminum oxide.

10. The display panel according to claim 1, in, The metal includes at least one selected from aluminum and silver.

11. The display panel according to claim 1, in, The circuit layer comprises: at least one transistor electrically connected to the light emitting element; a connecting electrode electrically connected to the at least one transistor; and An insulating layer is disposed between the connection electrode and the barrier layer, wherein the at least one transistor includes an oxide semiconductor.

12. The display panel according to claim 11, in, The first electrode covers the hydrogen supply layer and the barrier layer, and the first electrode is connected to the connection electrode via a contact hole defined through the insulating layer.

13. The display panel according to claim 11, in: The barrier layer is connected to the connection electrode via a contact hole defined through the insulating layer; and The first electrode covers the hydrogen supply layer and contacts an upper surface of the barrier layer exposed from the hydrogen supply layer.

14. The display panel according to claim 11, in, The display panel further includes: An additional barrier layer is disposed between the insulating layer and the barrier layer, and the additional barrier layer is in contact with each of the insulating layer and the barrier layer, wherein the additional barrier layer includes a transparent conductive oxide.

15. The display panel according to claim 1, in, The first electrode includes a transparent conductive oxide.

16. The display panel according to claim 1, in, The thickness of the first electrode is in a range of 500 angstroms to 1000 angstroms.

17. The display panel according to claim 1, in, The light emitting element is provided in plurality, and the plurality of light emitting elements include a first light emitting element and a second light emitting element that emit light of different colors, in, The barrier layer of the first light emitting element and the barrier layer of the second light emitting element are spaced apart from each other, and The hydrogen supply layer of the first light emitting element and the hydrogen supply layer of the second light emitting element are spaced apart from each other.

18. The display panel according to claim 17, in: The light-emitting layer of the first light-emitting element includes first quantum dots; The light-emitting layer of the second light-emitting element includes second quantum dots; and A diameter of the first quantum dot and a diameter of the second quantum dot are different from each other.

19. The display panel according to claim 1, in, The light emitting element further comprises: a hole transport region, disposed between the first electrode and the light-emitting layer; and The electron transport region is arranged between the light-emitting layer and the second electrode.

20. The display panel according to claim 19, in, The hydrogen supply layer includes hydrogen impurities, wherein the hydrogen impurities diffuse into the electron transport region.

21. The display panel according to claim 19, in, The light emitting element is provided in plurality, and the plurality of light emitting elements includes a first light emitting element and a second light emitting element that emit light of different colors, The thickness of the hole transport region of the first light-emitting element and the thickness of the hole transport region of the second light-emitting element are different from each other.

22. The display panel according to claim 21, in: The hole transport region of each of the first light-emitting element and the second light-emitting element includes a hole injection layer and a hole transport layer sequentially stacked on each other; and The thickness of the hole injection layer of the first light-emitting element and the thickness of the hole injection layer of the second light-emitting element are different from each other.

23. The display panel according to claim 1, in, The light emitting element further comprises: an electron transport region, disposed between the first electrode and the light-emitting layer; and The hole transport region is arranged between the light-emitting layer and the second electrode.

24. The display panel according to claim 23, in, The light emitting element is provided in plurality, and the plurality of light emitting elements includes a first light emitting element and a second light emitting element that emit light of different colors, The thickness of the electron transport region of the first light-emitting element and the thickness of the electron transport region of the second light-emitting element are different from each other.

25. A method for manufacturing a light emitting element, in, The method comprises: forming a barrier layer comprising metal and metal oxide; forming a hydrogen supply layer disposed on the barrier layer and comprising an inorganic material; forming a first electrode on the hydrogen supply layer; forming a light-emitting layer including quantum dots on the first electrode; and A second electrode is formed on the light emitting layer.

26. The method according to claim 25, in, The forming of the hydrogen supply layer includes depositing the inorganic material, and Wherein, the depositing of the inorganic material is performed by chemical vapor deposition by injecting a gas including hydrogen.

27. The method according to claim 25, in, The forming of the barrier layer comprises: forming an initial barrier layer, the initial barrier layer comprising a first initial layer including the metal and a second initial layer disposed on the first initial layer and including the metal oxide; and The thickness of the second initial layer is increased, wherein the increasing the thickness of the second initial layer is performed by a thermal treatment process or a plasma treatment process.

28. The method according to claim 25, in, The method further comprises: After forming the first electrode and before forming the light-emitting layer, forming a functional layer on the first electrode, Wherein, the forming of the functional layer is performed by an inkjet printing process.

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