Process chamber purge plate and susceptor shielding system with shroud

Abstract

Examples related to a purge plate including a shroud are disclosed. The shroud helps to avoid crosstalk between stations in a multi-station processing chamber. An example provides a processing tool including a processing chamber including a plurality of stations. The treatment tool also includes a purge plate having a surface facing the chamber. The purge plate also includes a plurality of cutouts configured to receive process gas outlets of the plurality of stations. The purge plate also includes a shroud disposed around at least a portion of a periphery of a first cutout of the plurality of cutout. The shroud extends away from the chamber-facing surface. The purge plate also includes a plurality of purge gas holes formed in the chamber facing surface and the shroud.

Description

Background Art

[0001] Semiconductor device manufacturing processes may involve many steps of material deposition, patterning, and removal to form an integrated circuit on a substrate. A variety of methods may be used to selectively deposit materials onto a substrate. One example is chemical vapor deposition. The chemical vapor deposition process involves flowing one or more precursor gases over a substrate within a processing chamber. The conditions in the chamber are controlled so that the precursor gases react and / or decompose on the substrate surface, thereby forming a film. Summary of the invention

[0002] This summary is provided to introduce a selection of concepts in a simplified form, which will be further described in the following detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that address any or all of the disadvantages mentioned in any part of this disclosure.

[0003] An example of a purge plate including a shield is disclosed. The shield helps avoid crosstalk between stations in a multi-station processing chamber. One example provides a processing tool including a processing chamber, the processing chamber including a plurality of stations. The processing tool also includes a purge plate having a surface facing the chamber. The purge plate also includes a plurality of cutouts configured to accommodate process gas outlets of the plurality of stations. The purge plate also includes a shield configured around at least a portion of a perimeter of a first cutout of the plurality of cutouts. The shield extends away from the surface facing the chamber. The purge plate also includes a plurality of purge gas holes formed in the surface facing the chamber and in the shield.

[0004] In some such examples, the shield is a first shield and the processing tool includes a second shield configured at least partially around a perimeter of a second cutout of the plurality of cutouts.

[0005] In some such examples, the plurality of purge gas holes may alternatively or additionally comprise a pattern, and wherein the pattern is interrupted at an edge of the shroud.

[0006] In some such examples, the shield may alternatively or additionally extend away from the chamber-facing surface a distance in a range between 0.10 inches and 0.25 inches.

[0007] In some such examples, the shroud may alternatively or additionally be configured to accommodate one or more tabs of the transfer ring.

[0008] In some such examples, the processing chamber may alternatively or additionally include four stations.

[0009] In some such examples, the processing tool further includes a susceptor located at a station in the plurality of stations, a susceptor support supporting the susceptor above a bottom surface of the processing chamber, and a susceptor shielding system, the susceptor shielding system including side shields configured around the susceptor support, a bottom shield supporting the side shields, and a radiation shield, the bottom shield including a plurality of adjusters configured to adjust one or more of the side shield inclination and the side shield height, the bottom shield also including one or more openings, the radiation shield configured to absorb heat radiated from the susceptor and transfer the heat to be removed from the processing chamber, the radiation shield including one or more foot pads extending through the one or more openings of the bottom shield. Alternatively or additionally, in some such examples, the side shields are configured around the susceptor, and the processing tool further includes a purge gas outlet to flow a purge gas into a space at least partially surrounded by the side shields. Alternatively or additionally, in some such examples, the processing tool further includes a plurality of lift pins supported by the bottom shield, and wherein the plurality of adjusters of the bottom shield are further configured to adjust one or more of a lift pin height and a lift pin angle relative to the base angle, wherein the radiation shield includes a plurality of cutouts configured to accommodate the plurality of lift pins.

[0010] In some such examples, the processing chamber may alternatively or additionally include a chemical vapor deposition tool.

[0011] Another example provides a purge plate for a process chamber in a processing tool. The purge plate includes a surface facing the chamber. The purge plate also includes a cutout configured to accommodate a corresponding process gas outlet of the processing tool. The purge plate also includes a shield configured around at least a portion of the periphery of the cutout. The shield extends from the surface facing the chamber. The purge plate also includes a plurality of purge gas holes formed in the surface facing the chamber and in the shield.

[0012] In some such examples, the purification plate comprises a unitary body.

[0013] In some such examples, the purge plate may alternatively or additionally be formed from aluminum.

[0014] In some such examples, the shield is a first shield and the purge panel includes a second shield configured around the second cutout.

[0015] In some such examples, the plurality of purge gas holes may alternatively or additionally comprise a pattern, with the pattern being interrupted at an edge of the shield.

[0016] In some such examples, the shield may alternatively or additionally extend away from the chamber-facing surface a distance in a range between 0.10 inches and 0.25 inches.

[0017] In some such examples, the purge plate may alternatively or additionally include second, third, and fourth cutouts.

[0018] In some such examples, the shroud may alternatively or additionally include one or more recesses configured to receive one or more tabs of the transfer ring.

[0019] In some such examples, the purge plate may alternatively or additionally be configured for use in a deposition chamber of a chemical vapor deposition tool.

[0020] Another example provides a method for processing a plurality of substrates in a processing chamber of a processing tool. The processing chamber includes a plurality of stations and a corresponding plurality of process gas outlets. The processing chamber also includes a purge plate. The purge plate includes a plurality of cutouts configured to accommodate the plurality of process gas outlets. The method includes flowing a first precursor gas over a first substrate at a first station. The method also includes flowing a second precursor gas over a second substrate at a second station. The method also includes flowing a purge gas through a purge hole formed through a chamber-facing surface of the purge plate. The method also includes flowing a purge gas through a purge hole formed through a shield through the purge plate. The shield is configured around at least a portion of a periphery of a first cutout of the plurality of cutouts.

[0021] In some such examples, the shield is a first shield, and the method further includes flowing the purge gas through a purge hole formed in a second shield of the purge plate. The second shield is configured at least partially around a portion of a second cutout of the plurality of cutouts.

[0022] In some such examples, the method of processing a plurality of substrates may alternatively or additionally further include an additional method including performing a chemical vapor deposition process.

[0023] In some such examples, the method may alternatively or additionally further include moving the first substrate to a second station after flowing the first precursor gas, and moving the second substrate to a third station after flowing the second precursor gas.

[0024] An example of a pedestal shielding system for protecting a pedestal system of a substrate processing tool is also disclosed. One example provides a substrate processing tool, the substrate processing tool including a processing chamber, a substrate heater, and a pedestal system configured in the processing chamber. The pedestal system includes a pedestal and a pedestal support configured to support the pedestal above the bottom surface of the processing chamber. The substrate processing tool also includes a pedestal shielding system. The pedestal shielding system includes a side shield configured around the pedestal support. The pedestal shielding system also includes a bottom shield supporting the side shield, the bottom shield including a plurality of adjusters configured to adjust one or more of the side shield inclination and the side shield height, the bottom shield also including one or more openings. The pedestal shielding system also includes a radiation shield configured to absorb heat radiated from the pedestal and transfer the heat to be removed from the processing chamber, the radiation shield including one or more foot pads extending through one or more openings of the bottom shield.

[0025] In some such examples, the side shields are configured around the base.

[0026] In some such examples, the substrate processing tool additionally or alternatively includes a purge gas outlet to flow a purge gas into the space at least partially surrounded by the side shields.

[0027] In some such examples, the substrate processing tool additionally or alternatively further includes a plurality of lift pins supported by the bottom shield.

[0028] In some such examples, the plurality of adjusters of the bottom shield are additionally or alternatively configured to adjust one or more of lift pin height and lift pin angle relative to the base angle.

[0029] In some such examples, the radiation shield additionally or alternatively includes a plurality of cutouts configured to accommodate the plurality of lift pins.

[0030] In some such examples, the substrate processing tool additionally or alternatively includes a chemical vapor deposition tool.

[0031] In some such examples, the side shields are additionally or alternatively integral with the bottom shield.

[0032] In some such examples, the side shields additionally or alternatively comprise aluminum.

[0033] Another example provides a pedestal shield system for a substrate processing tool. The pedestal shield system includes side shields configured to be placed around a pedestal support of a pedestal system of a substrate processing tool. The pedestal shield system also includes a bottom shield configured to support the side shields. The bottom shield includes a plurality of adjusters configured to adjust one or more of the side shield inclination and the side shield height, and the bottom shield also includes one or more openings. The pedestal shield system also includes a radiation shield configured to absorb heat radiated from the pedestal support and the pedestal. The radiation shield includes one or more foot pads configured to extend through one or more openings of the bottom shield.

[0034] In some such examples, the bottom shield is configured to support a plurality of lift pins.

[0035] In some such examples, the adjuster of the bottom shield is additionally or alternatively further configured to adjust one or more of lift pin height and lift pin angle relative to the base angle.

[0036] In some such examples, the plurality of lift pins additionally or alternatively includes three or more lift pins and the adjuster of the bottom shield is further configured to adjust the lift pin flatness relative to the base surface.

[0037] In some such examples, the radiation shield additionally or alternatively includes a plurality of cutouts configured to accommodate the plurality of lift pins.

[0038] In some such examples, the side shields are additionally or alternatively integral with the bottom shield.

[0039] In some such examples, the side shields additionally or alternatively comprise aluminum.

[0040] Another example provides a method of adjusting a processing tool, the processing tool including a processing chemical outlet, a pedestal system, and a pedestal shielding system. The pedestal system includes a pedestal and a pedestal support. The pedestal shielding system includes a bottom shield, a side shield disposed around the pedestal and supported by the bottom shield, and a radiation shield including one or more foot pads extending through one or more openings in the bottom shield. The method includes adjusting a tilt angle of the pedestal relative to the processing chemical outlet. The method also includes adjusting one or more adjusters on the bottom shield to adjust a position of the side shield relative to the pedestal.

[0041] In some such examples, the method further includes applying a vacuum to a process chamber of the processing tool prior to adjusting the tilt angle of the susceptor.

[0042] In some such examples, the method additionally or alternatively further includes directing a purge gas into a space at least partially surrounded by the side shield.

[0043] In some such examples, adjusting one or more adjusters additionally or alternatively includes adjusting one or more of a screw, a cam, a rack and pinion, a level, a piston, or a wedge. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 An exemplary processing tool including multiple stations within a processing chamber is shown.

[0045] Figure 2 A side schematic diagram of an exemplary station including a purge panel with a shroud is shown.

[0046] Figure 3 An exploded view of selected components of an exemplary four-station processing chamber is schematically shown.

[0047] Figure 4 A bottom view of an exemplary purge plate including a shield positioned around a portion of a cutout is schematically shown.

[0048] Figure 5 A bottom view of an exemplary purification panel including multiple shields is schematically shown.

[0049] Figure 6 A bottom view of an exemplary purge plate including a shroud having a recess to accommodate a transfer ring is schematically shown.

[0050] Figure 7 An exemplary pattern of purification holes formed in a purification plate is schematically shown.

[0051] Figure 8 A flow chart is shown of an exemplary method for processing a substrate in a multi-station processing chamber.

[0052] Fig. 9 An exemplary processing tool including a plurality of pedestal systems and corresponding plurality of pedestal shield systems within a processing chamber is schematically shown.

[0053] Fig.10 Schematic diagram showing a cross section of an exemplary pedestal shield system within a processing chamber.

[0054] Figures 11A to 11C The alignment of the pedestal and pedestal shielding system relative to the process chemical outlet is schematically shown.

[0055] Fig.12 An exemplary side shield configured for use in a pedestal shield system is shown.

[0056] Fig.13 An exemplary bottom shield configured for use in a pedestal shield system is shown.

[0057] Fig.14 Exemplary integrated side and bottom shields are shown.

[0058] Fig.15 A top view of an exemplary radiation shield configured for use in a susceptor shielding system is shown.

[0059] Fig.16 show Fig.15 Bottom view of the radiation shield.

[0060] Fig.17 A flow chart is shown of an exemplary method for adjusting a processing tool including a pedestal system and a pedestal shield system.

[0061] Fig.18 A block diagram of an exemplary computing system is shown. DETAILED DESCRIPTION

[0062] The term "adjuster" generally refers to a component of a bottom shield that is capable of adjusting the height of the bottom shield relative to the position of an underlying surface, such as the bottom surface of a processing chamber. Exemplary adjusters may include one or more of a screw, a cam, a rack and pinion, a lever, a piston, or a wedge.

[0063] The term "atomic layer deposition" generally refers to a process of forming a film on a substrate in one or more separate layers by sequentially conformally adsorbing precursors to the substrate and reacting the adsorbed precursors to form a film layer. Examples of ALD processes include plasma enhanced ALD (PEALD) and thermal ALD (TALD). PEALD utilizes a plasma of a reactive gas to promote the chemical conversion of a precursor adsorbed to a substrate into a film on the substrate. TALD utilizes heat to promote the chemical conversion of a precursor adsorbed to a substrate into a film on the substrate.

[0064] The term "bottom shield" generally refers to the component in a base shield system that supports the side shields and / or one or more lift pins.

[0065] The term "bottom surface of a processing chamber" generally refers to a surface defining a lower interior boundary of a processing chamber.

[0066] The term "chemical vapor deposition" generally refers to a process for depositing a film on a substrate by flowing one or more precursor gases over the substrate under conditions that cause the precursor gases to react to form a film on the substrate surface.

[0067] The term "chemical vapor deposition tool" generally refers to a processing tool configured to perform chemical vapor deposition.

[0068] The term "cutout" generally refers to a feature in a purge plate that is configured to accommodate a process gas outlet. The cutout may be formed at the edge of the purge plate. The cutout may also be formed within the interior of the purge plate.

[0069] The term "foot pad" generally refers to a structural feature of the radiation shield that is configured to extend downwardly through an opening in the bottom shield.

[0070] The term "indexing plate" generally refers to a substrate transfer mechanism in a multi-station processing tool that rotates substrates between stations.

[0071] The term "lift pins" generally refers to structures configured to extend through corresponding holes in a susceptor to support a substrate above a susceptor surface when the height of the upper ends of the lift pins is raised above the height of the susceptor surface.

[0072] The term "lift pin cutout" generally refers to a structure in a radiation shield that is configured to accommodate one or more lift pins.

[0073] The term "lift pin height" generally refers to the distance from the bottom surface of the processing chamber to the upper ends of the lift pins.

[0074] The term "lift pin angle" generally refers to the angle of the direction of the long axis of the lift pin relative to the direction of the long axis of the base support.

[0075] The term "lift pin flatness" generally refers to the degree of planarity between a plane defined by the upper ends of three or more lift pins and the surface of a base.

[0076] The term "lift pin hole" generally refers to an opening in a base for receiving a lift pin.

[0077] The term "pedestal" generally refers to a structure configured to support a substrate within a processing chamber. The pedestal may include any suitable structure for supporting and / or clamping a substrate, such as a chuck.

[0078] The term "base system" generally refers to a system comprising a base and a base support.

[0079] The term "susceptor support" generally refers to a support column configured to support a susceptor. In some examples, the susceptor support is configured to adjust the tilt angle of the susceptor relative to the process chemical outlet.

[0080] The term "pedestal shielding system" generally refers to a system configured to at least partially protect the pedestal system from the processing environment in the processing chamber. The pedestal shielding system may include a bottom shield, a side shield, and a radiation shield. In various examples, the bottom shield and the side shield may be integrated or separate.

[0081] The term "susceptor" generally refers to a structure configured to support a substrate within a processing chamber. The susceptor may include any suitable structure for supporting and / or clamping a substrate, such as a chuck.

[0082] The term "base system" generally refers to a system comprising a base and a base support.

[0083] The term "susceptor support" generally refers to a support column configured to support a susceptor. In some examples, the susceptor support is configured to adjust the tilt angle of the susceptor relative to the process chemical outlet.

[0084] The term "pedestal shielding system" generally refers to a system configured to at least partially protect the pedestal system from the processing environment in the processing chamber. The pedestal shielding system may include a bottom shield, a side shield, and a radiation shield. In various examples, the bottom shield and the side shield may be integrated or separate.

[0085] The terms "process gas outlet" and "process chemical outlet" generally refer to an outlet configured to direct a process chemical or process chemical mixture onto a substrate during a chemical process. Showerheads and nozzles are examples of process gas and process chemical outlets. The term "showerhead" generally refers to a process chemical outlet comprising a plurality of holes distributed across an area.

[0086] The term "processing chamber" generally refers to a housing in which chemical and / or physical processes are performed on a substrate. Exemplary chemical processes include chemical vapor deposition (CVD), atomic layer deposition (ALD), and dry etching processes.

[0087] The terms "processing tool" and "substrate processing tool" generally refer to a mechanism that includes a processing chamber and other hardware configured to enable a process to be performed in the processing chamber. The term "purge gas" generally refers to any suitable gas, such as an inert gas, for removing a process gas from at least a portion of a processing chamber. Purge gases can be used to isolate process stations from each other in a multi-station processing tool.

[0088] The term "purge gas" generally refers to any suitable gas, such as an inert gas, for removing at least a portion of the process chemicals from the process chamber. Exemplary purge gases include nitrogen (N2), argon (Ar), neon (Ne), and helium (He).

[0089] The term "purge gas outlet" generally refers to the outlet at the location through which the purge gas is introduced into the process chamber.

[0090] The term "purge plate" generally refers to a structure that defines at least a portion of a process chamber housing and contains holes through which a purge gas can flow into the process chamber. The term "purge hole" may refer to any hole in a purge plate that is configured for the flow of a purge gas. The term "chamber-facing surface" generally refers to a surface of a purge plate that faces the interior of a process chamber.

[0091] The term "radiation shield" generally refers to a structure configured to absorb heat radiated from a susceptor system within a processing chamber and conduct the heat to be removed from the processing chamber. The radiation shield includes one or more pads to transfer the heat to another structure in the processing chamber. In some examples, the pads can transfer the heat to the bottom surface of the processing chamber.

[0092] The term "spacer" generally refers to a structure that may be placed between a lift pin and an underlying surface, such as a bottom shield.

[0093] The term "shield" generally refers to any structure that extends from a chamber-facing surface of a purge plate to inhibit migration of process gases from one process station toward one or more other process stations in a processing chamber.

[0094] The term "side shield" generally refers to a structure placed around a pedestal support and configured to help protect the pedestal system from processing chamber conditions. The side shields may be supported by and / or integrated with the bottom shield.

[0095] The term "station" generally refers to a location in a processing tool where chemical and / or physical processes are performed on a substrate.

[0096] The term "substrate" generally refers to any object that may be processed at a station in a process chamber of a processing tool.

[0097] The term "substrate heater" generally refers to a heater configured to heat a substrate during processing. In some examples, the substrate heater may be incorporated into the susceptor.

[0098] The term "substrate holder" generally refers to a structure configured to support a substrate and / or a transfer ring that clamps a substrate. Examples include pedestals and chucks.

[0099] The term "transfer ring" generally refers to a structure configured to hold a substrate during transfer between processing stations.

[0100] The term "unitary body" generally refers to a one-piece structure without joints formed by welding, adhesives, or fasteners.

[0101] As mentioned above, the manufacture of integrated circuits on substrates involves many individual steps of material addition, patterning, modification, and removal. For example, chemical vapor deposition can be used to deposit films having various compositions on a substrate surface. Chemical vapor deposition involves exposing a substrate to one or more reactive precursor gases under conditions that cause the precursor gases to react and / or decompose on the substrate.

[0102] Chemical vapor deposition is typically performed in a process chamber under a controlled gas environment. Some processing tools may include multiple stations located in the same process chamber. This configuration enables multiple substrates to be processed in parallel. This can help achieve higher throughput relative to a process chamber with a single station.

[0103] Different stations within a processing chamber may perform different chemical processes in parallel. However, performing different chemical processes in parallel at different stations may create a risk of migration of process gases between processing stations. This migration of process gases between processing stations may be referred to as "crosstalk". In some cases, crosstalk between stations may create a risk of contaminating the growing film.

[0104] To help prevent migration of process gases between stations, a flow of purge gas may be directed between stations. For example, the process chamber may include a purge plate. The purge plate may include a plurality of holes configured to direct the flow of purge gas between stations. The purge gas flow isolates the process environment of the station. The purge gas may flow from the purge plate toward a chamber exhaust port in the bottom of the process chamber and be removed by a vacuum pumping system. In this way, unreacted precursor gas and reaction products may be pumped out as the purge gas flows toward the exhaust port.

[0105] However, some processing environments may cause a brief interruption of the desired flow pattern of the purge gas and process gas (reactants and / or products) toward the exhaust port. Accordingly, in order to provide further obstruction to crosstalk under such conditions, an example of the use of a purge plate comprising one or more shields is disclosed. In short, the purge plate of the processing chamber includes a plurality of cutouts configured to accommodate a plurality of process gas outlets in the processing chamber. For at least one of the cutouts, the shield is configured around at least a portion of the periphery of the cutout. The shield extends into the processing chamber from the surface of the purge plate facing the chamber. The shield thus helps to guide the precursor gas and / or reaction products from the corresponding process gas outlet to the exhaust port and away from other processing stations. In addition, the purge plate includes a plurality of purge holes configured to guide the flow of the purge gas between processing stations. The use of a purge plate comprising a purge hole and one or more shields as disclosed herein can help reduce the risk of crosstalk between sites of a processing tool. Although a chemical vapor deposition tool is described in the context of this article, a purge plate comprising a shield as disclosed herein can be used in any other suitable processing tool. Examples include atomic layer deposition tools, plasma etch tools, and atomic layer etch tools.

[0106] Figure 1 Shown is a schematic diagram of an exemplary processing tool 100 (eg, a multi-station processing tool) that may be used to process multiple substrates in parallel. Figure 1 A first station 102A and a second station 102B are depicted within a process chamber 106. In some examples, the process tool 100 comprises a chemical vapor deposition tool and the process chamber 106 comprises a deposition chamber. The first station 102A and the second station 102B are configured to expose a substrate to one or more precursor gases, for example as part of a chemical vapor deposition process. The process tool 100 may further comprise Figure 1 In some examples, the processing tool 100 includes four stations. However, any suitable number of stations may be used.

[0107] The first station 102A includes a first substrate holder 110A and a first substrate holder support 112A disposed within a first well 114A of the processing chamber 106. The first station 102A also includes a first process gas outlet 116A fluidly connected to a first precursor gas source 118A. The first precursor gas source 118A is configured to provide one or more precursor gases to the first process gas outlet 116A. The first substrate holder 110A supports a first substrate 120A during processing. In some examples, the first substrate holder 110A may support a transfer ring that clamps the first substrate 120A. The first substrate holder support 112A may be configured to raise and lower the first substrate holder 110A, for example, to adjust a gap between the first substrate holder 110A and the first process gas outlet 116A.

[0108] Similarly, the second station 102B includes a second substrate holder 110B and a second substrate holder support 112B disposed in the second well 114B. The second station 102B also includes a second process gas outlet 116B connected to a second precursor gas source 118B fluid. The second precursor gas source 118B is configured to provide one or more precursor gases to the second process gas outlet 116B. The second substrate holder 110B supports the second substrate 120B during processing at the second station 102B. In some examples, the second substrate holder 110B can support a transfer ring that clamps the second substrate 120B. The second substrate holder support 112B can be configured to raise and lower the second substrate holder 110B.

[0109] The processing chamber 106 also includes a purge plate 130. The purge plate 130 includes a cutout to accommodate the first process gas outlet 116A and the second process gas outlet 116B. The processing tool 100 also includes a purge gas source 132 including a purge gas that can be introduced into the processing chamber 106 through purge gas holes formed in the purge plate 130 (indicated by purge gas flow arrows 133 and similar arrows). In the depicted example, the purge plate 130 includes a top plate that forms a top boundary of the processing chamber 106. In other examples, the purge plate can have any other suitable location and / or orientation in the processing chamber.

[0110] The processing chamber 106 may be evacuated by an exhaust system 134 including one or more exhaust ports 136A-B. In the depicted example, the first station 102A includes a first exhaust port 136 A. Similarly, the second station 102B includes a second exhaust port 136B.

[0111] The processing chamber 106 also includes a rotary disk 138 configured to transfer substrates between stations. The rotary disk 138 can be configured to lift the substrates 120A-B from the corresponding substrate holders 110A-B. In some examples, the rotary disk can be configured to lift a transfer ring holding the substrates 120A-B. After lifting the substrates 120A-B, the rotary disk 138 rotates to advance the substrates 120A-B to the respective next stations.

[0112] The processing tool 100 also includes a controller 150 configured to control the processing tool 100 to perform a process cycle. For example, the controller 150 is controllably connected to valves 152A, 152B, and 154 to control the flow of process gases and purge gases during and between process cycles. The controller 150 is also controllably connected to the exhaust system 134. The controller 150 can control the valves 152A, 152B, 154 and the exhaust system 134 to control the pressure and gas composition within the processing chamber 106. The controller 150 can also control the substrate holder supports 112A, 112B to raise and lower the substrate. The controller 150 can further control the indexing disk 138 to transfer the substrate between stations. The controller 150 can additionally control Figure 1 Other components not shown in the drawings may include, for example, a substrate holder heater, a gas line heater, a substrate transfer robot, a load lock, and / or any other suitable components.

[0113] During substrate processing, controller 150 controls valve 152A to flow one or more precursor gases from first precursor gas source 118A over first substrate 120A at first station 102A. Similarly, controller 150 controls valve 152B to flow one or more precursor gases from second precursor gas source 118B over second substrate 120B at second station 102B.

[0114] As mentioned above, different precursor gases may be provided to the first process gas outlet 116A and the second process gas outlet 116B. Thus, to assist in preventing crosstalk, the controller 150 controls the valve 154 to flow the purge gas through the purge hole in the purge plate 130. The purge plate 130 includes a first shield 160A disposed at least partially around a cutout accommodating the first process gas outlet 116A. The first shield 160A may assist in preventing crosstalk between the first station 102A and the second station 102B by directing the flow of the precursor gas and / or reaction products from the first process gas outlet 116A to the first exhaust port 136A. This may also help maintain the desired gas flow pattern even when transient conditions disrupt the normal flow pattern. In some examples, the purge plate 130 may include multiple shields for respective multiple stations. For example, as indicated at 160B, the purge plate 130 may include a second shield 160B disposed at least partially around a cutout accommodating the second process gas outlet 116B. In other examples, the second shield 160B may be omitted.

[0115] Figure 2 A side view of an exemplary station 200 including a purification panel with a shield is schematically shown. In some examples, the station 200 may represent Figure 1 200 is a first station 102A and / or a second station 102B in a well 205. The station 200 includes a substrate holder 202 and a substrate holder support 204 disposed in a well 205. A transfer ring 206 is disposed around a substrate 208 on the substrate holder 202. In other examples, the transfer ring may be omitted when the substrate can be transferred by a robot that directly handles the substrate. The station 200 also includes a purge plate 210 having a cutout 211 to accommodate a process gas outlet 212. The process gas outlet 212 is configured to dispense a precursor gas or a precursor gas mixture over the substrate 208. The station 200 also includes a wall 214 that separates the well 205 from an adjacent station (e.g., station 216 or station 218).

[0116] The purge plate 210 includes a shield 220 extending from a chamber-facing surface 222 of the purge plate 210 to assist in preventing crosstalk. In some examples, the purge plate 210 includes a single body including the shield 220. Such a purge plate may be machined, cast, or formed in any other suitable manner. In other examples, the shield 220 may be incorporated into the purge plate 210 by welding, fasteners, adhesives, and / or other suitable connections. The purge plate 210 may include any suitable material. For example, the purge plate 400 may be formed of a metal (e.g., aluminum or corrosion-resistant steel) or a ceramic. As discussed above, in the absence of the shield 220, as depicted by arrows 224A and 224B, there may be a risk of residual precursor gas and / or reaction products migrating toward other stations. Conversely, as depicted by arrows 228A and 228B, the shield 220 helps direct the precursor gas to the exhaust port 226 in the well 205.

[0117] In this example, purge gas holes are formed in the shroud 220 as indicated by purge gas flow arrows 234 and similar arrows. Figure 2 Although not shown, the purge gas may also flow through other areas of the purge plate 210 through the purge holes. Exemplary purge hole configurations are described in more detail below.

[0118] In some examples, the shield 220 can extend far enough from the chamber-facing surface 222 so that when the substrate holder 202 and the process gas outlet 212 are positioned for substrate processing, the lower surface 230 of the shield 220 is below the upper surface 232 of the transfer ring 206. In other examples, the shield 220 can be configured to extend a lesser distance from the chamber-facing surface 222. In some examples, the shield 220 extends a distance from the chamber-facing surface 222 in a range between 0.10 inches and 0.25 inches. In other examples, the shield can extend any other suitable distance from the chamber-facing surface 222.

[0119] As mentioned above, a processing chamber may have any suitable number of stations. Figure 3 An exploded view of exemplary components 300 for a process chamber including four process stations is shown. The depicted components include a chamber base 302, a purge plate 304 including cutouts 306A-306D, an indexing disk 308, process gas outlets 310A-310D, and substrate holders 312A-312D.

[0120] The purge plate 304 is configured to define an upper boundary of the process chamber. The purge plate 304 includes a shield 316 disposed on a surface 318 facing the chamber. Figure 3306C. The purge plate 304 also includes purge holes formed in the chamber-facing surface 318 and the shield 316 for allowing the purge gas to flow into the processing chamber. Figure 3 The purge holes are omitted in FIG. 1 but are described in more detail below. Figure 3 The shield is depicted as being positioned about one cutout, but in other examples the shield may be positioned about two or more cutouts.

[0121] In some examples, the substrate is clamped by a transfer ring such as a transfer ring 320. In such an example, the indexing disk 308 is configured to move the corresponding transfer ring. During indexing, the substrate holders 312A to 312D can be lowered and / or the indexing disk 308 can be raised by the spindle 322 to lift the transfer ring from the corresponding substrate holder. The indexing disk 308 can then be rotated to advance the transfer ring and the corresponding substrate. Then, the indexing disk 308 can be lowered and / or the substrate holders 312A to 312D can be raised to place the substrate on the substrate holders 312A to 312D for process cycles. The shield 316 of the purge plate 304 can be configured to accommodate the transfer ring 320 including the insert 328, as described below.

[0122] Figures 4 to 6 An exemplary purge plate that can be used in a four-station processing chamber to assist in preventing crosstalk between stations is shown. First, Figure 4 A bottom view of an exemplary purge plate 400 including a shield 402 is depicted. In some examples, the shield 402 can be a single shield. The shield 402 is located on a surface of the purge plate 400 that faces the chamber. The purge plate 400 includes a plurality of cutouts 404A to 404D. Each cutout can be configured to accommodate a respective process gas outlet. The shield 402 is configured around a portion of the periphery of the cutout 404C. In some examples, the purge plate 400 is configured for a deposition chamber of a chemical vapor deposition tool.

[0123] As mentioned above, the purification plate 400 may include a single body. In such examples, the purification plate 400 may be machined, cast, or otherwise formed as a single piece. In other examples, the shield 402 may include an object separate from the planar portion 406 of the purification plate 400. In such examples, the shield 402 may be coupled to the planar portion 406 of the purification plate 400 in any suitable manner. Examples may include welding, one or more fasteners, and / or a suitable adhesive. The purification plate 400 may include any suitable material, such as aluminum, corrosion-resistant steel, or ceramic.

[0124] Figure 5A bottom view of another exemplary purge plate is depicted. The purge plate 500 includes a plurality of cutouts 502A to 502D configured to accommodate a corresponding plurality of process gas outlets. The purge plate 500 also includes shields 504A to 504D configured partially around the cutouts 502A to 502D, respectively. In other examples, the shields may be configured around the periphery of any suitable number of cutouts. In some examples, the purge plate 500 is configured as a deposition chamber for a chemical vapor deposition tool. The purge plate 500 may include any suitable material, such as aluminum, corrosion resistant steel, or ceramic.

[0125] Figure 6 Another exemplary purge plate 600 is shown. The purge plate 600 includes a shield 602 having recesses 604 to accommodate a transfer ring. In the depicted example, the shield 602 includes three recesses 604 to accommodate the inserts of the corresponding transfer rings. In other examples, the shield may have a different number of recesses to accommodate different transfer ring configurations. In some examples, the purge plate 600 is configured for a deposition chamber of a chemical vapor deposition tool. The purge plate 600 may include any suitable material, such as aluminum, corrosion resistant steel, or ceramic.

[0126] As mentioned above, the purge plate may include purge holes through which purge gas may flow to assist in maintaining separate processing environments at different processing stations. Figure 7 An enlarged view of an exemplary purification plate 700 including purification holes 702 is shown. The purification plate 700 may represent any of the exemplary purification plates described herein. In the depicted example, the purification holes 702 extend both through the planar portion 704 of the purification plate 700 and through the shield 706. In some examples, the purification holes 702 may be formed in a pattern that may assist in achieving relatively uniform purification. In such an example, the pattern may be interrupted at an edge 708 of the shield 706. For example, the pattern of purification holes 702 may place a purification hole at 710. When 710 is located at edge 708, the purification hole at 710 may be omitted. For manufacturability and / or to avoid disrupting a desired purification flow pattern, the purification holes may be omitted at the edge of the shield. Although Figure 7 The examples in depict a regular pattern of purge holes, but any suitable regular or irregular configuration of purge holes may be used. The purge holes 702 may be formed in any suitable manner. For example, the purge holes 702 may be machined into the purge plate 700.

[0127] Figure 8 A flow chart of an exemplary method 800 for processing multiple substrates in a single processing chamber, such as the exemplary processing chambers described herein, is shown. The method 800 may represent a chemical vapor deposition process, or any other suitable process. The method 800 may be controlled by a controller of a processing tool, such as the controller 150 of the processing tool 100.

[0128] At 802, method 800 includes flowing a first precursor gas or gas mixture from a first process gas outlet over a first substrate at a first station. At 804, method 800 also includes flowing a different second precursor gas or gas mixture from a second process gas outlet over a second substrate at a second station. Additionally, in some examples, at 806, method 800 includes flowing a third precursor gas or gas mixture from a third process gas outlet over a third substrate at a third station. The third precursor gas or gas mixture may be the same as the first or second gas or gas mixture, or may be different. In some examples, the processing chamber may include additional stations. Thus, in some examples, at 808, method 800 includes flowing an Nth precursor gas from an Nth process gas outlet over an Nth substrate at an Nth station.

[0129] Continuing, at 810, method 800 includes flowing a purge gas through a purge hole formed by one or more shields through a purge plate. As described above, the shield includes a structure extending from a surface of the purge plate facing the chamber. The shield can be configured at least partially around the periphery of a cutout that accommodates a first process gas outlet or a second process gas outlet. In some examples, multiple cutouts may have shields. The use of a purge plate including a shield can assist in preventing crosstalk between stations of a processing chamber by directing gas away from other stations and toward an exhaust port. In some examples, the purge plate includes a single body including a shield. In some examples, at 812, method 800 includes flowing a purge gas through a purge hole formed in a surface of the purge plate facing the chamber. In some examples, at 814, method 800 also includes flowing the purge gas out of the processing chamber through an exhaust system.

[0130] In some examples, method 800 further includes transferring the first substrate to the second station and transferring the second substrate to the third station at 816. In some examples, method 800 includes transferring the substrate via a transfer ring and an indexing plate at 818. In other examples, the substrate may be transferred via direct handling rather than via a transfer ring.

[0131] By processing substrates within a process chamber containing a purge plate with a shield, the examples disclosed herein can help reduce the risk of crosstalk between stations. Thus, the disclosed examples can facilitate processing of multiple substrates within a single process chamber using different chemistries at different stations.

[0132] In addition to crosstalk, other problems may occur in the deposition system. As described above, chemical vapor deposition and atomic layer deposition processes are typically performed in a processing chamber under a controlled gas environment. The processing chemical can be introduced into the processing chamber through a processing chemical outlet. For example, the processing chemical can be introduced through a nozzle placed above the substrate. The substrate can be supported by a susceptor system including a susceptor and a susceptor support. During processing, the substrate can rest on the top surface of the susceptor. In some examples, the susceptor may include a substrate heater configured to heat the substrate. The susceptor support may include, for example, a column configured to raise and lower the susceptor and substrate. In addition, lift pins extending through lift pin holes in the susceptor can assist in supporting the substrate during transfer. For example, when the susceptor is lowered, the lift pins can support the substrate above the susceptor to facilitate substrate transfer using a robot.

[0133] The processing environment may involve the application of a partial vacuum within the processing chamber. This may cause a degree of warping in the chamber ceiling, such as a purge plate. The warping may result in a slight tilting of the surface of the process chemical outlet, such as a showerhead, relative to the surface of the pedestal. To compensate for this effect, the pedestal may be tilted so that the substrate is approximately parallel to the process chemical outlet when the processing chamber is under the processing pressure.

[0134] In addition to low pressure, the processing environment may also involve high temperatures (e.g., >300°C) and the presence of process chemicals. Such a processing environment may cause wear and tear on structures within the processing chamber. For example, a substrate heater may heat the susceptor support and other structures by radiation, conduction, and / or convection of the process chemicals. In addition, deposition of process chemicals may occur on surfaces of the susceptor system, such as the back side of the susceptor, the susceptor support, and within the lift pin holes. The use of elevated temperatures may promote chemical deposition on such surfaces. Over time, the accumulation of high temperatures and / or chemical deposits may cause stress on the susceptor support. Maintenance work to correct such problems may be labor-intensive and / or costly.

[0135] One option to protect the susceptor system from temperature and / or process chemicals is to place a shield around the susceptor support and the susceptor. A purge gas can then be flowed through the space between the susceptor support and the shield to reduce chemical deposition on the susceptor support. However, the use of such a shield may present challenges. For example, certain processing environments may include temperatures in the range of 400°C to 500°C. In such an environment, the shield temperature may be greater than 300°C. Thus, it may not be feasible to use metal alloys (e.g., aluminum 6061) that may experience degassing and distortion above 300°C. Ceramic shields may also be used to avoid distortion and degassing. However, ceramics may incur additional costs. It may also be difficult to adjust the susceptor shield to match the tilt of the susceptor. In addition, the use of a shield may complicate lift pin adjustment because the lift pins and gaskets may not be accessible without removing the shield.

[0136] Thus, examples are disclosed regarding a pedestal shield system for use in a process chamber of a substrate processing tool. As described in more detail below, the disclosed examples can help protect the pedestal system from processing environments such as high temperatures and / or chemical deposition.

[0137] In brief, the pedestal shielding system includes side shields, a bottom shield, and a radiation shield. The bottom shield is disposed below the pedestal on the bottom surface of the processing chamber. The side shield is disposed around the pedestal support and supported by the bottom shield. The bottom shield includes an adjuster configured to adjust the height of the side shield and / or the inclination of the side shield. The side shield at least partially surrounds the space below the pedestal that can be purged using a purge gas. In this way, the side shield can help protect the pedestal system and the lift pins from the processing environment. The radiation shield includes a foot pad extending through an opening in the bottom shield to contact another structure in the processing chamber for heat transfer. The radiation shield is configured to absorb heat radiated from the pedestal system and conduct the heat to be removed from the processing chamber. For example, heat can be transferred from the foot pad to the bottom surface of the processing chamber.

[0138] The pedestal shield system according to the present disclosure can thus help mitigate the adverse effects of the processing environment on the pedestal system. The disclosed exemplary pedestal shield system can conduct heat in the pedestal system with sufficient efficiency to allow the use of less expensive aluminum alloys to replace ceramics. For example, when the substrate heater is heated to about 500°C, the side shield temperature can still be below 300°C. This can avoid degassing and / or distortion that can occur in certain aluminum alloys at higher temperatures.

[0139] Before discussing these examples in detail, Fig. 9 An exemplary processing tool 900 is schematically shown. The processing tool 900 is a multi-station processing tool configured to process multiple substrates in parallel. Fig. 9A first processing station 902A and a second processing station 902B are depicted within a processing chamber 904. Each of the first processing station 902A and the second processing station 902B is configured to expose a substrate to one or more processing chemicals. The processing tool 900 may further include Fig. 9 In other examples, the processing tool may include a single processing station. In some examples, the processing tool 900 includes a chemical vapor deposition tool configured to perform chemical vapor deposition. In some examples, the processing tool 900 may alternatively or additionally include an atomic layer deposition tool configured to perform atomic layer deposition.

[0140] The first processing station 902A includes a first pedestal 908A and a first pedestal support 910A disposed within a first well 912A of the processing chamber 904. The first processing station 902A also includes a first pedestal shielding system 914A configured around the first pedestal support 910A. The first pedestal shielding system 914A may at least partially surround a first space 915A around the first pedestal support 910A and below the first pedestal 908A. Details of an exemplary pedestal shielding system suitable for use as the first pedestal shielding system 914A are described in more detail below.

[0141] The first treatment station 902A also includes a first treatment chemical outlet 916A fluidly connected to a treatment chemical source 918. The treatment chemical source 918 can be configured to provide a treatment chemical to the first treatment chemical outlet 916A. In certain examples, the treatment chemical source 918 can be configured to provide a mixture of treatment chemicals.

[0142] The first pedestal 908A supports the first substrate 920A during processing. The first pedestal support 910A is configured to raise and lower the first pedestal 908A to, for example, adjust the gap between the first pedestal 908A and the first process chemical outlet 916A. The first pedestal support 910A may be further configured to adjust the tilt of the first pedestal 908A.

[0143] The first base 908A may include lift pins (shown in FIG. 1 for clarity). Fig. 9 Lowering the first pedestal 908A may cause the lift pins to extend through the lift pin holes to support the first substrate 920A. Raising the first pedestal 908A may cause the lift pins to retract.

[0144] Similarly, the second processing station 902B includes a second pedestal 908B and a second pedestal support 910B disposed in a second well 912B. The second pedestal support 910B is configured to raise and lower the second pedestal 908B. The second pedestal support 910B may also be configured to adjust the inclination of the second pedestal 908B. The second processing station 902B further includes a second pedestal shielding system 914B configured around the second pedestal support 910B. The second pedestal shielding system 914B may at least partially surround a second space 915B around the second pedestal support 910B and below the second pedestal 908B. Details of an exemplary pedestal shielding system suitable for use as the second pedestal shielding system 914B are described in more detail below.

[0145] The second processing station 902B also includes a second processing chemical outlet 916B fluidly connected to a processing chemical source 918. The processing chemical source 918 can be configured to provide one or more processing chemicals to the second processing chemical outlet 916B. In some examples, different processing chemical sources can be fluidly connected to the second processing chemical outlet 916B. This can allow different processing chemicals to be introduced into the first processing station 902A and the second processing station 902B.

[0146] The processing chamber 904 also includes a top plate 922, a first processing chemical outlet 916A and a second processing chemical outlet 916B. The processing tool 900 also includes a purge gas source 924, which contains a purge gas that can be introduced into the processing chamber 904 through a purge gas hole formed in the top plate 922. The processing tool 900 also includes a purge gas source 926, which contains a purge gas that can be introduced into the first space 915A through a purge gas outlet 928A and introduced into the second space 915B through a purge gas outlet 928B. The purge gas can flow into the space through a gap between the susceptor shielding system and the susceptor support. In some examples, the same purge gas source can be used for the purge gas source 924 and the purge gas source 926.

[0147] As described above, a pressure drop within the process chamber 904 may cause some degree of warping of the top plate 922. This may result in some degree of tilting of the first process chemical outlet 916A and / or some degree of tilting of the second process chemical outlet 916B when the process chamber 904 is under vacuum. Thus, as described above, the first pedestal support 910A may be configured to allow adjustment of the tilt angle of the first pedestal 908A. This may allow the first pedestal 908A to be adjusted to be appropriately parallel to the first process chemical outlet 916A when the process chamber 904 is under vacuum. Similarly, the tilt of the second pedestal support 910B may be adjusted so that the second substrate 920B is appropriately parallel to the second process chemical outlet 916B.

[0148] The process chamber 904 may be evacuated via an exhaust system 934 that includes one or more exhaust ports 936A-936B. In the depicted example, the first process station 902A includes a first exhaust port 936A. Similarly, the second process station 902B includes a second exhaust port 936B.

[0149] The processing tool 900 may also include Fig. 9 For example, the processing tool 900 may include a substrate transfer system configured to transfer a substrate between the first processing station 902A and the second processing station 902B.

[0150] The processing tool 900 also includes a controller 950 configured to control the processing tool 900 to perform a process cycle. For example, the controller 950 is controllably connected to valves 952A, 952B, 954, and 956 to control the flow of processing chemicals and purge gases during and between process cycles. The controller 950 is also controllably connected to an exhaust system 934. The controller 950 can control valves 952A, 952B, 954, 956, and the exhaust system 934 to control the pressure and gas composition within the processing chamber 904. The controller 950 can also control the first pedestal support 910A and the second pedestal support 910B to raise, lower, and / or tilt the first pedestal 908A and the second pedestal 908B. The controller 950 can also control one or more heaters to heat the first substrate 920A and / or the second substrate 920B. The controller 950 can additionally control Fig. 9 Other components not shown, such as gas line heaters, liquid cooling components, substrate transfer robots, load locks, and / or any other suitable components.

[0151] Fig.10 Schematically shown is a cross-sectional side view of an exemplary process chamber 1000. The process chamber 1000 includes a pedestal system 1001 and a pedestal shielding system 1002. The process chamber 904 is an example of the process chamber 1000. The pedestal system 1001 includes a pedestal 1003 supported by a pedestal support 1004. The pedestal support 1004 is configured to raise and lower the pedestal 1003. As described below, the pedestal support 1004 is also configured to adjust the tilt angle of the pedestal 1003 relative to the process chemical outlet.

[0152] The pedestal 1003 is configured to support a substrate 1006 on a pedestal surface 1007. The pedestal 1003 includes a substrate heater 1008 configured to heat the substrate 1006. In some examples, the substrate heater 1008 is configured to heat to a temperature in the range of 350° C. to 550° C. In other examples, the substrate heater may be omitted.

[0153] The processing chamber 1000 also includes a pedestal shield system 1002 configured to at least partially protect the pedestal system 1001 from a processing environment within the processing chamber 1000. The pedestal shield system 1002 includes side shields 1010, a bottom shield 1012, and a radiation shield 1014.

[0154] The side shield 1010 is disposed around the susceptor support 1004 and supported by the bottom shield 1012. For example, the side shield 1010 at least partially surrounds a space 1016 below the susceptor 1003 through which the purge gas can flow (indicated by flow arrows 1018 and similar arrows). In this way, the side shield 1010 can inhibit chemical deposition on the susceptor 1003 and the susceptor support 1004 by at least partially blocking the flow of process chemicals into the space 1016. In various examples, the side shield 1010 can be integral with or separate from the bottom shield 1012. In some examples, the side shield 1010 includes aluminum and / or an aluminum alloy.

[0155] The bottom shield 1012 includes a plurality of adjusters. Two adjusters are shown, namely adjuster 1020A and adjuster 1020B. Each adjuster is capable of adjusting the height of the bottom shield relative to the position of the underlying surface. For example, adjuster 1020A is capable of adjusting height 1021A and adjuster 1020B is capable of adjusting height 1021B. Figures 11A to 11C As discussed in more detail, multiple adjusters are configured to adjust one or more of the side shield height, side shield inclination, lift pin height, and lift pin angle. Exemplary adjusters that may be suitable as adjusters in the bottom shield 1012 include screws, cams, rack and pinion gears, levels, pistons, wedges, and combinations of two or more of the above. In some examples, the bottom shield may include three adjusters. In other examples, any other suitable number of adjusters may be used. The adjusters 1020A and 1020B may be accessed from corresponding openings in the upper side of the bottom shield 1012.

[0156] The bottom shield 1012 is also configured to support a plurality of lift pins, such as lift pin 1022. The lift pin 1022 extends through a lift pin hole 1024 in the pedestal 1003 such that the upper end of the lift pin 1022 can support the substrate 1006. When the upper end of the lift pin 1022 is raised above the height of the pedestal surface 1007, the lift pin 1022 can support the substrate 1006. For example, the pedestal 1003 can be raised so that the lift pin 1022 is retracted through the lift pin hole 1024 and supports the substrate 1006 by the pedestal 1003. Similarly, the pedestal 1003 can be lowered so that the substrate 1006 is supported by the plurality of lift pins. In some examples, the plurality of lift pins includes three lift pins including the lift pin 1022. In other examples, any other suitable number of lift pins can be used. The lift pins can include any suitable material. Examples include aluminum, sapphire, corrosion resistant steel, and ceramic.

[0157] exist Fig.10 1028 of the bottom shield 1012. The lower end of the lift pin 1022 is supported by a shim 1026 disposed within a recess 1028 of the bottom shield 1012. The shim 1026 may be removable so that a user may replace the shim 1026 with another shim having a different thickness. The shim may comprise any suitable material, such as aluminum, sapphire, corrosion resistant steel, or ceramic. In other examples, the shim and / or recess may be optional. In other examples, such a shim may be omitted.

[0158] As discussed above, the base 1003 can be raised and lowered. To prevent the lift pins 1022 from being pulled upward when the base is raised, the lift pins 1022 can include weights 1030. In other examples, the weights 1030 can be omitted.

[0159] The bottom shield 1012 also includes one or more openings to accommodate the pads of the radiation shield 1014. For example, the opening 1034 is configured to accommodate the pad 1036. In some examples, the bottom shield may have three to six openings. In other examples, the bottom shield may include a number of openings outside this range.

[0160] The bottom shield 1012 may contact the bottom surface 1040 of the processing chamber 1000 at relatively few points (e.g., three points). As such, there may be little heat conduction from the bottom shield 1012 to the underlying surface. Thus, the radiation shield 1014 is configured to absorb heat radiated from the base system 1001 and conduct the heat to remove it from the processing chamber 1000. The radiation shield 1014 includes one or more foot pads (including foot pad 1036) to transfer heat to another structure in the processing chamber. One or more foot pads extend through an opening in the bottom shield 1012. For example, foot pad 1036 extends through opening 1034 and is in thermal communication with the bottom surface 1040. As depicted by arrow 1046, foot pad 1036 can conduct heat to the bottom surface 1040 to remove heat from the base system 1001. In some examples, the bottom surface 1040 is actively cooled, for example, by flowing a liquid through a channel below the bottom surface 1040. In some examples, the foot pad can conduct heat to another structure within the processing chamber 1000, such as a heat sink that is separate from the bottom surface of the processing chamber.

[0161] As mentioned above, a base shielding system according to the present disclosure may be configured to facilitate adjustment of the side shield position and / or lift pin position relative to the position of the base. Figures 11A to 11C Schematically showing the adjustment of an exemplary shield system 1100 within a process chamber of a processing tool. The shield system 1100 includes side shields 1102, a bottom shield 1104 supporting the side shields, and a radiation shield 1106. The process chamber includes a process chemical outlet 1108 tilted to a tilt angle 1110 represented by angle θ. Such tilting may occur, for example, due to warping of the top plate 922 (e.g., a process chamber ceiling) when the process chamber is under reduced pressure. The magnitude of the tilt of the depicted process chemical outlet 1108 is exaggerated for clarity.

[0162] The processing tool includes a susceptor 1112 supported by a susceptor support 1114. The processing tool also includes lift pins 1120A and 1120B extending through respective lift pin holes 1122A and 1122B of the susceptor 1112.

[0163] Due to the inclination of the process chemical outlet 1108, the susceptor 1112 is not parallel to the process chemical outlet 1108, which may affect film deposition.

[0164] Thus, as described above, the base can be tilted and adjusted to align with the process chemical outlet. Fig. 11B As depicted in FIG. 1 , the pedestal support 1114 and the pedestal 1112 are adjusted to an inclined angle 1110. Thus, the pedestal 1112 is substantially parallel to the process chemical outlet 1108.

[0165] Once the base 1112 is tilted, the lift pins 1120A and 1120B are not aligned with the base 1112. Fig. 11B As shown in FIG. 1 , the upper ends of the lift pins 1120A, 1120B are not aligned with the surface of the base 1112. Thus, the lift pins 1120A, 1120B may get stuck and / or break during the descent of the base 1112.

[0166] The side shields 1102 are also not aligned with the pedestal 1112. As a result, the gap 1124A may become wider and allow process chemicals to enter the space below the pedestal 1112. As a result, the gap 1124B may become narrower. This may interrupt the flow of the purge gas. Therefore, adjusting the tilt of the pedestal without adjusting the side shields may expose the pedestal system to the process environment.

[0167] Therefore, one or more adjusters of the bottom shield 1104 are used to adjust the position of the bottom shield 1104. Exemplary adjusters are shown at 1130A and 1130B. Fig. 11C As shown in , adjuster 1130A is adjusted to increase gap 1132A between a first position of bottom shield 1104 and bottom surface 1134 of the processing chamber. Additionally, adjuster 1130B is adjusted to decrease gap 1132B between a second position of bottom shield 1104 and bottom surface 1134. Any suitable adjustment mechanism may be used for each adjuster 1130A, 1130B. Examples include screws, cams, rack and pinion, levels, pistons, wedges, or any combination of any two or more of the above. Although in Figures 11A to 11C 1104, but the bottom shield 1104 can include any suitable number of adjusters. For example, by using three adjusters, the bottom shield 1104 can be used as a tripod, whereby the three adjusters can be independently adjusted to control the height and tilt of the tripod. As a result of the adjustment, the side shield 1102 is tilted to an angle substantially equivalent to the tilt angle 1110. In some examples, the position of the shield system 1100 can also be adjusted in the XY plane on the bottom surface 1134, which can help achieve similarity between the gaps 1124A and 1124B.

[0168] The positions of the lift pins 1120A and 1120B are also adjusted by the adjusters 1130A and 1130B. Fig. 11C As depicted in FIG. 1 , by adjusting adjuster 1130A, gap 1132A is increased, and by adjusting adjuster 1130B, gap 1132B is decreased, thereby increasing the height of lift pin 1120A, decreasing the height of lift pin 1120B, and adjusting the angle of the two lift pins. Figures 11A to 11CIn the depicted example, the lift pin height refers to the distance from the bottom surface 1134 to the upper end of the lift pin. Adjustment of the lift pin angle can help align lift pin 1120A with lift pin hole 1122A and align lift pin 1120B with lift pin hole 1122B. Thus, this can help prevent the lift pin from being damaged or stuck during the raising / lowering of the base.

[0169] In addition, the lift pin flatness may be adjusted relative to the surface of the base 1112 so that the upper ends of the lift pins 1120A and 1120B are substantially flush with the surface of the base 1112. Here, the lift pin flatness refers to the degree of planarity between a plane defined by the upper ends of three or more lift pins (including the lift pins 1120A and 1120B) and the surface of the base 1112. Fig. 11C As depicted in , when the pedestal 1112 is lowered, the lift pins 1120A, 1120B can contact the substrate placed on top of the pedestal 1112 together.

[0170] Adjusting the lift pin height and lift pin flatness by adjusting the adjusters 1130A-1130B may be more convenient for the user than other methods such as adjustment of lift pin length or adjustment of shims. For example, removing the shield to access the shims and lift pins, adjusting the shims and lift pins, and then replacing the shield may be labor intensive. In contrast, adjusting the adjusters 1130A-1130B, such as by twisting screws, may be relatively quick for the user. In other examples, shims may be used to adjust the height of the lift pins independently of the adjusters 1130A-1130B.

[0171] like Fig. 11C As shown in FIG. 1 , when the bottom shield 1104 is adjusted, the pads 1140A, 1140B of the radiation shield 1106 maintain contact with the bottom surface 1134. The pads 1140A, 1140B extend through the openings 1142A, 1142B in the bottom shield 1104. In this way, the radiation shield 1106 does not tilt with the bottom shield 1104. Thus, when the bottom shield 1104 is adjusted, the radiation shield 1106 can conduct heat through the pads 1140A, 1140B to remove heat from the processing chamber.

[0172] Fig.12 An exemplary side shield 1200 configured for use in a base shielding system is schematically shown. The side shield 1200 is Fig.10 The side shield 1010 or Figures 11A to 11C 1. An example of a side shield 1102 of the embodiment of the present invention. The side shield 1200 can be configured around a base support of the base system to help protect the base system from the processing environment. The side shield 1200 can be supported by a bottom shield. In some examples, the side shield can be integrated with the bottom shield.

[0173] The side shield 1200 includes a shape that approximates a cylinder. In other examples, the side shield may include any other suitable shape. The side shield 1200 includes a flange 1202 having a fastener hole 1204. The flange 1202 can help transfer heat from the side shield 1200 to the bottom shield supporting the side shield 1200. Fasteners such as screws can be inserted through the fastener holes 1204 to help secure the side shield 1200 to the bottom shield.

[0174] In some examples, the side shield 1200 includes aluminum and / or an aluminum alloy. As discussed above, a processing environment including a temperature greater than 300°C may cause degassing of the metal alloy (e.g., aluminum 6061), which may deform, damage, and / or weaken the metal alloy. However, the examples disclosed herein enable the side shield in the processing environment to be at a relatively low temperature. For example, in one experiment, the substrate heater was heated to 500°C, and the measured side shield temperature was less than 225°C. Therefore, the examples disclosed herein enable metal alloys (e.g., aluminum alloys such as aluminum 6061) that are less expensive than ceramics to be used as side shields. In other examples, the side shield 1200 may include any other suitable material. Examples include corrosion-resistant steel or ceramics.

[0175] Fig.13 An exemplary bottom shield 1300 configured for use in a base shield system is schematically shown. The bottom shield 1300 is Fig.10 The bottom shield 1012 or Figures 11A to 11C The bottom shield 1300 is configured to support a side shield, such as the side shield 1010, the side shield 1102, or the side shield 1200. Fig.13 As depicted in , the bottom shield 1300 includes three adjusters 1302A to 1302C. In other examples, the bottom shield may include any other suitable number of adjusters. Exemplary adjusters may include screws, cams, racks and pinions, levels, pistons, wedges, or any combination of two or more of these structures. In some examples, the adjuster may include a locking mechanism to lock the adjuster and prevent movement. For example, the adjuster may include an adjustment screw and a locking screw. In such an example, when in the locked position, the locking screw may partially cover or otherwise block the adjustment screw. The adjustment screw is adjustable when the locking screw is in the unlocked position, and the adjustment screw is not adjustable when the locking screw is in the locked position.

[0176] The bottom shield 1300 also includes fastener holes 1304 that can be aligned with the fastener holes of the corresponding side shields to facilitate attachment of the side shields to the bottom shield 1300. Examples include the fastener holes 1204 of the side shield 1200. For example, screws threaded through the fastener holes 1204 and the fastener holes 1304 can be used to secure the side shield 1200 to the bottom shield 1300. In other examples, any suitable fasteners can be used. Examples include clamps and bolts. In further examples, fasteners can be omitted. For example, the bottom shield can include grooves configured to receive the side shields and clamp the side shields by friction.

[0177] The bottom shield 1300 also includes a plurality of features 1306A-1306C configured to support a corresponding plurality of lift pins. In some examples, the features 1306A-1306C can be configured to prevent displacement of the lift pins. For example, the features 1306A-1306C can be recesses in which the lift pins can rest. In some examples, the features 1306A-1306C can be configured to accommodate weights and / or lift pin assemblies. For example, the weights can rest at least partially within the recesses. Additionally, in some examples, shims can be placed in the features such that the shims are configured between the lift pins and the bottom shield 1300. Return to Reference Fig.10 , recess 1028 is an example of a feature that may accommodate a shim to support a lift pin.

[0178] As discussed above, the adjusters 1302A to 1302C can be configured to adjust one or more of the lift pin height, lift pin angle, side shield height, and side shield tilt. The adjusters 1302A to 1302C can be adjusted together to raise and lower the bottom shield 1300. In addition, by tilting the bottom shield 1300, the adjusters 1302A to 1302C can be used to adjust the side shield tilt and lift pin angle relative to the base.

[0179] The bottom shield 1300 also includes a plurality of openings including an opening 1308 and an opening 1310. The opening 1308 is located near the center of the bottom shield 1300 and is configured to accommodate a base support of the base system. The opening 1308 may also be configured to allow the purge gas to flow around the base support through the opening 1308. The opening 1310 is located near the edge of the bottom shield 1300 and is configured to accommodate a foot pad of the radiation shield. The bottom shield 1300 includes six openings configured to accommodate the foot pads. However, in other examples, the bottom shield may include any suitable number of openings to accommodate any suitable number of foot pads. The openings may include any suitable shape and size. In addition, in some examples, the openings may be configured to accommodate two or more foot pads.

[0180] As discussed above, in certain examples, the side shields and the bottom shield may be integrated. Fig.14 An exemplary integrated bottom and side shield 1400 is shown including a side shield portion 1402 and a bottom shield portion 1404. The integrated bottom and side shield 1400 also includes one or more adjusters (including adjuster 1406) configured to adjust one or more of the side shield tilt and the side shield height. The integrated bottom and side shield 1400 also includes one or more openings (including opening 1408) configured to accommodate foot pads of the radiation shield. The integrated bottom and side shield 1400 also includes one or more features (including feature 1410) configured to accommodate one or more lift pins. The side shield portion 1402 and the bottom shield portion 1404 may be joined in any suitable manner, such as welding. In some examples, the integrated bottom and side shield 1400 may be machined, cast, or otherwise formed as a single component. Additionally, in some examples, the integrated bottom and side shield 1400 includes aluminum and / or an aluminum alloy.

[0181] Fig.15 A schematic top view of an exemplary radiation shield 1500 is shown. Radiation shield 1500 is Fig.10 Radiation shield 1014 or Figures 11A to 11C 15. Radiation shield 1500 includes six foot pads 1502A through 1502F indicated by dashed lines. Fig.16 A perspective view of radiation shield 1500 showing the bottom of radiation shield 1500 is shown. Fig.16 As seen in , the pads 1502A-1502F of the radiation shield 1500 extend downward. When used with a bottom shield, the pads 1502A-1502F extend downward through an opening in the bottom shield, such as through the opening 1310 of the bottom shield 1300. The radiation shield 1500 is configured to absorb heat from the base system. In addition, the pads 1502A-1502F are configured to conduct heat to perform heat removal in the processing chamber. In some examples, the pads 1502A-1502F may include a material with a relatively high thermal conductivity, such as copper. In other examples, any other suitable material may be used. Although in Figures 15 to 16 The example depicted in includes six foot pads, but the radiation shield may include any suitable number of foot pads. In addition, the foot pads may have any suitable shape.

[0182] The radiation shield 1500 also includes an opening 1504 configured to receive a pedestal support of the pedestal system. The opening 1504 can also be configured to allow a purge gas to flow around the pedestal support through the opening 1504. The radiation shield 1500 also includes a plurality of cutouts 1506A-1506C configured to receive one or more lift pins. For example, the cutout 1506A can receive a first lift pin extending through the radiation shield 1500 to be supported by the bottom shield (e.g., feature 1306A at the bottom shield 1300). Similarly, the cutout 1506B can receive a second lift pin. The cutout 1506C can receive a third lift pin.

[0183] As mentioned above, the pedestal shield system may be adjusted to achieve and maintain proper alignment with the pedestal system.For example, the pedestal shield system may be adjusted during manufacture or maintenance of a processing tool.

[0184] Fig.17 An exemplary method 1700 of adjusting a pedestal shielding system is shown. A pedestal system of a substrate processing tool includes a pedestal and a pedestal support. The pedestal shielding system of the substrate processing tool includes side shields, a bottom shield, and a radiation shield. At 1702, method 1700 includes adjusting a tilt angle of the pedestal relative to a process chemical outlet. As described above, application of a vacuum may cause warping of a ceiling of a process chamber resulting in tilting of the process chemical outlet. Thus, adjusting the tilt angle of the pedestal at 1704 may include applying a vacuum to a process chamber of the process tool prior to adjusting the tilt angle of the pedestal.

[0185] At 1706, method 1700 also includes adjusting one or more adjusters on a bottom shield of the base shield system to adjust a position of the side shield relative to the base. In some examples, at 1708, adjusting the one or more adjusters includes adjusting one or more of a screw, a cam, a rack and pinion, a level, a piston, or a wedge. In some examples, at 1710, adjusting the one or more adjusters may include adjusting a height of the side shield. In some examples, at 1712, adjusting the one or more adjusters may include adjusting a tilt of the side shield. Further, in some examples, at 1714, adjusting the one or more adjusters may include adjusting a lift pin height of one or more lift pins supported by the bottom shield. And, in some examples, at 1716, adjusting the one or more adjusters may include adjusting a lift pin flatness relative to a surface of the base.

[0186] It should be understood that in some examples, the disclosed pedestal shielding system and purge plate examples can be used in the same processing station of a processing tool. The disclosed example pedestal shielding system can help protect the pedestal from environmental influences such as high temperatures and process gases. In addition, the disclosed example purge plates can help prevent crosstalk between stations of a multi-station tool.

[0187] In some examples, the methods and processes described herein may be combined with a computing system of one or more computing devices. Specifically, such methods and processes may be implemented as a computer application or service, an application programming interface (API), a library, and / or other computer program products.

[0188] Fig.18 A non-limiting example of a computing system 1800 is schematically shown that can perform one or more of the above methods and processes. The computing system 1800 is shown in simplified form. The computing system 1800 can take the form of one or more personal computers, workstations, computers integrated with wafer processing tools, and / or network accessible server computers.

[0189] The computing system 1800 includes a logic machine 1802 and a storage machine 1804. The computing system 1800 may optionally include a display subsystem 1806, an input subsystem 1808, a communication subsystem 1850, and / or Fig.18 Controllers 150 and 950 are examples of computing system 1800 .

[0190] Logic machine 1802 includes one or more physical devices configured to execute instructions. For example, the logic machine can be configured to execute instructions that are part of one or more applications, services, programs, routines, libraries, objects, components, data structures, or other logical constructs. Such instructions can be implemented to perform tasks, implement data types, transform the state of one or more components, achieve technical effects, or otherwise achieve desired results.

[0191] The logic machine may include one or more processors configured to execute software instructions. Additionally or alternatively, the logic machine may include one or more hardware or firmware logic machines configured to execute hardware or firmware instructions. The processors of the logic machine may be single-core or multi-core, and the instructions executed thereon may be configured for sequential, parallel and / or distributed processing. The various components of the logic machine may optionally be distributed in two or more separate devices that may be remotely located and / or configured for coordinated processing. Various aspects of the logic machine may be virtualized and executed by a remotely accessible networked computing device configured in a cloud computing configuration.

[0192] The storage machine 1804 includes one or more physical devices configured to store instructions 1812 that can be executed by a logic machine to implement the methods and processes described herein. When such methods and processes are implemented, the state of the storage machine 1804 can be transformed—for example, to store different data.

[0193] Storage 1804 may include removable and / or built-in devices. Storage 1804 may include optical storage (e.g., CD, DVD, HD-DVD, Blu-ray disc, etc.), semiconductor storage (e.g., RAM, EPROM, EEPROM, etc.), and / or magnetic storage (e.g., hard disk drive, floppy disk drive, tape drive, MRAM, etc.). Storage 1804 may include volatile, non-volatile, dynamic, static, read / write, read-only, random access, sequential access, location addressable, file addressable, and / or content addressable devices.

[0194] It should be understood that storage 1804 includes one or more physical devices. However, alternatively, aspects of the instructions described herein may be propagated via a communication medium (eg, electromagnetic signals, optical signals, etc.) that is not held for a limited duration by a physical device.

[0195] Aspects of the logic machine 1802 and the storage machine 1804 may be integrated together into one or more hardware logic components. For example, such hardware logic components may include field programmable gate arrays (FPGAs), program and application specific integrated circuits (PASIC / ASIC), program and application specific standard products (PSSP / ASSP), systems on chips (SOCs), and complex programmable logic devices (CPLDs).

[0196] When included, display subsystem 1806 can be used to present a visual representation of the data stored by storage machine 1804. This visual representation can take the form of a graphical user interface (GUI). Since the methods and processes described herein change the data held by the storage machine, and therefore change the state of the storage machine, the state of display subsystem 1806 can also be converted to visually represent the change of the underlying data. Display subsystem 1806 can include one or more display devices using almost any type of technology. Such a display device can be combined with a logical machine 1802 and / or a storage machine 1804 in a shared cabinet (a shared enclosure), or such a display device can be a peripheral display device.

[0197] When included, input subsystem 1808 may include or may interact with one or more user input devices (e.g., a keyboard, mouse, or touch screen). In some examples, the input subsystem may include or interact with selected natural user input (NUI) components. Such components may be integrated or peripheral, and the conversion and / or processing of input actions may be handled on-machine or off-machine. Exemplary NUI components may include microphones for voice and / or sound recognition, and infrared, color, stereo, and / or depth cameras for machine vision and / or gesture recognition.

[0198] When included, the communication subsystem 1810 can be configured to communicatively couple the computing system 1800 with one or more other computing devices. The communication subsystem 1810 can include wired and / or wireless communication devices compatible with one or more different communication protocols. As non-limiting examples, the communication subsystem can be configured to communicate via a wireless telephone network, or a wired or wireless local area network or wide area network. In some examples, the communication subsystem can allow the computing system 1800 to send messages to other devices and / or receive messages from other devices via a network such as the Internet.

[0199] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific examples or examples should not be considered restrictive, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown and / or described may be performed in the order shown and / or described, in other orders, in parallel, or omitted. Likewise, the order of the above-mentioned processes may be changed.

[0200] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

1. A processing tool comprising: A processing chamber comprising: Multiple stations, and A purification plate comprising: The surface facing the chamber, a plurality of cutouts configured to accommodate process gas outlets of the plurality of stations, a shield disposed around at least a portion of a perimeter of a first one of the plurality of cutouts, the shield extending away from the chamber-facing surface, and A plurality of purge gas holes are formed in the chamber-facing surface and the shield.

2. The processing tool of claim 1, wherein the shield is a first shield, and the processing tool further comprises a second shield configured at least partially around a perimeter of a second cutout of the plurality of cutouts.

3. The processing tool of claim 1, wherein the plurality of purge gas holes comprises a pattern, and wherein the pattern is interrupted at an edge of the shield.

4. The processing tool according to claim 1, wherein the shield is configured to accommodate one or more tabs of a transfer ring.

5. The processing tool of claim 1 , further comprising a pedestal at a station of the plurality of stations, a pedestal support supporting the pedestal above a bottom surface of the processing chamber, and a pedestal shielding system comprising: a side shield disposed about the base support, a bottom shield supporting the side shields, the bottom shield including a plurality of adjusters configured to adjust one or more of a side shield inclination and a side shield height, the bottom shield also including one or more openings, and A radiation shield configured to absorb heat radiated from the susceptor and to transfer the heat to be removed from the processing chamber includes one or more foot pads extending through the one or more openings of the bottom shield.

6. The processing tool of claim 5, wherein the side shield is disposed around the susceptor, and the processing tool further comprises a purge gas outlet to flow a purge gas into a space at least partially surrounded by the side shield.

7. The processing tool of claim 5 , further comprising a plurality of lift pins supported by the bottom shield, and wherein the plurality of adjusters of the bottom shield are further configured to adjust one or more of lift pin height and lift pin angle relative to a base angle, wherein the radiation shield comprises a plurality of cutouts configured to accommodate the plurality of lift pins.

8. A purge plate for a process chamber in a process tool, the purge plate comprising: a surface facing the chamber; a cutout configured to accommodate a corresponding process gas outlet of the processing tool; a shroud disposed around at least a portion of a perimeter of the cutout, the shroud extending from the chamber-facing surface; as well as A plurality of purge gas holes are formed in the chamber-facing surface and the shield.

9. The purification plate of claim 8, wherein the purification plate comprises a single body.

10. The purification plate of claim 8, wherein the purification plate is formed of aluminum.

11. The purification plate of claim 8, wherein the shield is a first shield, and the purification plate further comprises a second shield disposed around a second cutout.

12. The purification plate of claim 8, wherein the plurality of purge gas holes comprises a pattern that is interrupted at an edge of the shield.

13. The purification panel of claim 8, wherein the shield extends away from the chamber-facing surface a distance in a range between 0.10 inches and 0.25 inches.

14. The purification plate of claim 8, further comprising a second cutout, a third cutout, and a fourth cutout.

15. The purification plate of claim 8, wherein the shield includes one or more notches configured to receive one or more tabs of a transfer ring.

16. The purge plate of claim 8, wherein the purge plate is configured for use in a deposition chamber of a chemical vapor deposition tool.

17. A method of processing a plurality of substrates in a processing chamber of a processing tool, the processing chamber comprising a plurality of stations and a corresponding plurality of process gas outlets, the processing chamber further comprising a purge plate, the purge plate comprising a plurality of cutouts, each of the plurality of cutouts being configured to accommodate a process gas outlet of the plurality of process gas outlets, the method comprising: flowing a first precursor gas over a first substrate at a first station; flowing a second precursor gas over a second substrate at a second station; flowing a purge gas through purge holes formed through a chamber-facing surface of the purge plate; and The purge gas is caused to flow through a purge hole formed through a shield of the purge plate, the shield being disposed around at least a portion of a periphery of a first cutout of the plurality of cutouts.

18. The method of claim 17, wherein the shield is a first shield, and the method further comprises flowing the purge gas through a purge hole formed in a second shield of the purge plate, the second shield being disposed at least partially around a portion of a second cutout of the plurality of cutouts.

19. The method of claim 17, wherein the method of processing the plurality of substrates further comprises an additional method, the additional method comprising: A chemical vapor deposition process is performed.

20. The method of claim 17, further comprising moving the first substrate to the second station after flowing the first precursor gas, and moving the second substrate to a third station after flowing the second precursor gas.

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