Light-emitting device, organic compound, light-emitting device, light-receiving device, electronic device, and lighting device

Abstract

The driving voltage of the light-emitting device is reduced and the light-emitting efficiency is improved. Provided is a light-emitting device including a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and a first layer between the first electrode and the light-emitting layer, the light-emitting layer containing a light-emitting substance, the first layer containing a first organic compound having a HOMO energy level of-5.40 eV or less, the HOMO energy level of the first organic compound being-5.40 eV or less, and the HOMO energy level of the second organic compound being-5.40 eV or less. The first organic compound is represented by general formula (G1). (In general formula (G1), Q is O or S. In addition, one of A and B is a group represented by general formula (g1), and the other of A and B and R1 to R31 each independently represent any of H, D, an alkyl group, a cyclic saturated hydrocarbon group, an alkoxy group, a cyano group, a halogen, a haloalkyl group, and an aromatic hydrocarbon group. In addition, a spiro structure may be formed by bonding R9 and R10 to each other. > # imgabs0 #

Description

Technical Field

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting element, a light-emitting device, a display module, a lighting module, a display device, a light-emitting device, a light-receiving device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification, etc., relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product, or a composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, camera devices, driving methods of these devices, or manufacturing methods of these devices can be cited. Background Art

[0002] In recent years, the research and development of light-emitting devices (also called light-emitting elements) using electroluminescence (EL) has become increasingly popular. In the basic structure of these light-emitting devices, a layer containing a light-emitting substance is sandwiched between a pair of electrodes. By applying voltage to the device, light from the light-emitting substance can be obtained.

[0003] Because this light-emitting device is a self-luminous light-emitting device, it has advantages over liquid crystal displays such as higher pixel visibility and no need for a backlight. Therefore, this light-emitting device is considered suitable for use as a flat panel display element. In addition, this light-emitting device can be made thin and light, which is also a great advantage. Moreover, a very fast response speed is also one of its characteristics.

[0004] Since these light-emitting devices can be formed into a film shape, surface light emission can be easily obtained. Therefore, a large-area element utilizing surface light emission can be easily formed. This feature is difficult to obtain when using a point light source such as an incandescent lamp or LED or a line light source such as a fluorescent lamp. Therefore, the utilization value of the light-emitting device as a surface light source that can be applied to lighting, etc. is very high.

[0005] Such light-emitting devices utilizing electroluminescence can be roughly classified according to whether the light-emitting substance is an organic compound or an inorganic compound. In an organic EL device (also referred to as an organic EL element) using an organic compound as a light-emitting substance and having a layer containing the organic compound between a pair of electrodes, by applying a voltage to the light-emitting device, electrons and holes are injected from the cathode and the anode into the layer containing the organic compound, respectively, so that current flows. Moreover, the injected electrons and holes put the organic compound in an excited state, thereby obtaining light emission from the excited organic compound.

[0006] The excited state formed by an organic compound can be a singlet excited state or a triplet excited state. * ) is called fluorescence, while the emission from the triplet excited state (T * ) is called phosphorescence.

[0007] There are many problems in improving the characteristics of such light-emitting devices, which depend on the material. Therefore, in order to overcome these problems, improvements in device structure and development of materials have been carried out. For example, Patent Document 1 discloses a hole transport material that can be used to form a light-emitting device with high luminous efficiency. [Prior technical literature] [Patent Document]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2009-298767 Summary of the invention Technical problem to be solved by the invention

[0009] An object of one embodiment of the present invention is to provide a light-emitting device having low driving voltage and low power consumption. In addition, an object of one embodiment of the present invention is to provide a light-emitting device having high luminous efficiency. In addition, an object of one embodiment of the present invention is to provide a light-emitting device having high reliability. In addition, an object of one embodiment of the present invention is to provide a light-emitting device having good carrier balance.

[0010] Another object of one embodiment of the present invention is to provide a hole transport material. Another object of one embodiment of the present invention is to provide an organic compound having a low HOMO level.

[0011] Another object of one embodiment of the present invention is to provide a light-receiving and light-emitting device including a light-emitting device with high reliability and a light-receiving device with high reliability. Another object of one embodiment of the present invention is to provide a light-receiving and light-emitting device including a light-receiving device with high light-receiving sensitivity.

[0012] In addition, an object of one embodiment of the present invention is to provide a light-emitting device, a light-emitting apparatus, a light-receiving device, an electronic device, and a lighting device with low power consumption. In addition, an object of one embodiment of the present invention is to provide a novel light-emitting device, a novel organic compound, a novel light-emitting apparatus, a novel light-receiving device, a novel electronic device, and a novel lighting device.

[0013] Note that the description of these purposes does not prevent the existence of other purposes. One mode of the present invention does not necessarily need to achieve all of the above purposes. In addition, purposes other than the above can be known and extracted from the description of the specification, drawings, claims, etc. Solutions to technical problems

[0014] One embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a light-emitting layer and a first layer, wherein the light-emitting layer is located between the first electrode and the second electrode, the first layer is located between the first electrode and the light-emitting layer, the light-emitting layer contains a light-emitting substance, the first layer contains a first organic compound, the HOMO energy level of the first organic compound is below -5.40 eV, and the first organic compound is an organic compound represented by the following general formula (G1).

[0015] [Chemical formula 1]

[0016] Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom.

[0017] In addition, one embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a light-emitting layer and a first layer, wherein the light-emitting layer is located between the first electrode and the second electrode, the first layer is located between the first electrode and the light-emitting layer, the light-emitting layer contains a light-emitting substance and a main material, the first layer contains a first organic compound, the difference between the HOMO energy level of the first organic compound and the HOMO energy level of the main material is less than 0.60 eV, and the first organic compound is an organic compound represented by the following general formula (G1).

[0018] [Chemical formula 2]

[0019] Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom.

[0020] In addition, one embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a light-emitting layer, a first layer and a second layer, wherein the light-emitting layer is located between the first electrode and the second electrode, the first layer is located between the first electrode and the light-emitting layer, the second layer is located between the light-emitting layer and the first layer, the light-emitting layer includes a light-emitting substance and a main material, the first layer includes a first organic compound, the second layer includes a second organic compound, the difference between the HOMO energy level of the first organic compound and the HOMO energy level of the main material is less than 0.60 eV, the difference between the HOMO energy level of the first organic compound and the HOMO energy level of the second organic compound is less than 0.30 eV, the first organic compound is an organic compound represented by the following general formula (G1), and the second organic compound is a material with hole transport properties.

[0021] [Chemical formula 3]

[0022] Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom.

[0023] Furthermore, one embodiment of the present invention is an organic compound represented by the following general formula (G5).

[0024] [Chemical formula 4]

[0025] Here, in the above general formula (G5), Q is an oxygen atom or a sulfur atom. 1 To R 8 , R 11 To R 16 , and R 18 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 Bonded to each other to form a spiro ring structure.

[0026] Furthermore, one embodiment of the present invention is an organic compound represented by the following structural formula (300).

[0027] [Chemical formula 5]

[0028] In addition, one embodiment of the present invention is a light-receiving and light-emitting device including a light-emitting device and a light-receiving device, wherein the light-emitting device and the light-receiving device are located on the same substrate, the light-emitting device includes a first electrode, a second electrode, a light-emitting layer and a first layer, the light-emitting layer is located between the first electrode and the second electrode, the first layer is located between the first layer and the light-emitting layer, the first layer contains a first organic compound, the light-receiving device includes a third electrode, a fourth electrode, a light-receiving layer and a second layer, the light-receiving layer is located between the third electrode and the fourth electrode, the second layer is located between the third electrode and the light-receiving layer, the second layer contains a first organic compound, the HOMO energy level of the first organic compound is below -5.40 eV, and the first organic compound is an organic compound represented by the following general formula (G10).

[0029] [Chemical formula 6]

[0030] Here, in the above general formula (G10), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g10), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), Ar 1 and Ar 2 Each independently represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms.

[0031] Note that the light-emitting device in this specification includes an image display device using a light-emitting device. In addition, the light-emitting device sometimes includes the following modules: a module in which a light-emitting device on a substrate is mounted with a connector such as an anisotropic conductive film or TCP (TapeCarrier Package); a module in which a printed circuit board is provided at the end of the TCP; or a module in which an IC (integrated circuit) is directly mounted on the light-emitting device by COG (Chip On Glass). Furthermore, a lighting device, etc. sometimes includes a light-emitting device. Effects of the Invention

[0032] According to one embodiment of the present invention, a light-emitting device having low driving voltage and low power consumption can be provided. In addition, according to one embodiment of the present invention, a light-emitting device having high light-emitting efficiency can be provided. In addition, according to one embodiment of the present invention, a light-emitting device having high reliability can be provided. In addition, according to one embodiment of the present invention, a light-emitting device having good carrier balance can be provided.

[0033] According to one embodiment of the present invention, a hole transport material can be provided. According to one embodiment of the present invention, an organic compound having a low HOMO level can be provided.

[0034] According to one embodiment of the present invention, a light-receiving and light-emitting device including a light-emitting device with high reliability and a light-receiving device with high reliability can be provided. According to one embodiment of the present invention, a light-receiving and light-emitting device including a light-receiving device with high light-receiving sensitivity can be provided.

[0035] In addition, according to one embodiment of the present invention, a light-emitting device, a light-emitting device, a light-receiving device, an electronic device, and a lighting device with low power consumption can be provided. In addition, according to one embodiment of the present invention, a novel light-emitting device, a novel organic compound, a novel light-emitting device, a novel light-receiving device, a novel electronic device, and a novel lighting device can be provided.

[0036] Note that the description of these effects does not prevent the existence of other effects. One mode of the present invention does not necessarily need to achieve all of the above effects. In addition, effects other than the above can be known and extracted from the description of the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figures 1A to 1F is a diagram illustrating a structure of a light emitting device according to an embodiment. Figure 2 is a diagram illustrating energy levels of a light emitting device according to an embodiment. FIG. 3A to FIG. 3C It is a diagram for explaining a light emitting device and a light receiving device according to an embodiment. FIG. 4A to FIG. 4C It is a diagram for explaining a light emitting device and a light receiving device according to an embodiment. FIG. 5A to FIG. 5D It is a diagram illustrating a light emitting device according to an embodiment. FIG. 6A to FIG. 6C It is a diagram for explaining a method for manufacturing a light emitting device according to an embodiment. 7A to 7C It is a diagram for explaining a method for manufacturing a light emitting device according to an embodiment. FIG. 8A to FIG. 8C It is a diagram for explaining a method for manufacturing a light emitting device according to an embodiment. 9A to 9D It is a diagram for explaining a method for manufacturing a light emitting device according to an embodiment. FIG. 10A to FIG. 10D It is a diagram for explaining a method for manufacturing a light emitting device according to an embodiment. FIG. 11A to FIG. 11C It is a diagram illustrating a light emitting device according to an embodiment. FIG. 12A to FIG. 12F It is a diagram illustrating a device and a pixel configuration according to an embodiment. FIG. 13A to FIG. 13C A diagram and a cross-sectional view illustrating a pixel circuit according to an embodiment. Fig.14 It is a diagram illustrating a light emitting device according to an embodiment. FIG. 15A to FIG. 15E It is a diagram for explaining an electronic device according to an embodiment. FIG. 16A to FIG. 16E It is a diagram for explaining an electronic device according to an embodiment. Fig.17A and Fig. 17B It is a diagram for explaining an electronic device according to an embodiment. Fig.18A and Fig.18B It is a diagram for explaining a lighting device according to an embodiment. Fig.19 It is a diagram for explaining a lighting device according to an embodiment. Fig. 20A and Fig. 20B It is N-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-benzo[b]naphtho[1,2-d]furan-8-amine 1 H NMR spectrum. Fig.21A and Fig. 21B It is FopTPBnf 1 H NMR spectrum. Fig. 22 These are the absorption and emission spectra of FopTPBnf in toluene solution. Fig.23 These are the absorption and emission spectra of the solid film of FopTPBnf. FIG. 24A to FIG. 24D It is a graph showing the distribution of HOMO and LUMO of FopTPBnf and comparative compounds. Fig.25 1 is a diagram illustrating the structure of the light emitting device 1 . Fig.26 1 and 2 are the luminance-current density characteristics of the light-emitting devices 1 to 3 and the comparative light-emitting device 4. Fig. 27 These are the current efficiency-luminance characteristics of the light-emitting devices 1 to 3 . Fig.28 1 and 2 are current-voltage characteristics of the light-emitting devices 1 to 3 and the comparative light-emitting device 4. Fig.29 It is the external quantum efficiency-brightness characteristic of the light-emitting devices 1 to 3. Fig.30 1 and 2 are emission spectra of light-emitting devices 1 to 3 and comparative light-emitting device 4. Fig.31 1 is a diagram showing changes in luminance of the light emitting device 2 , the light emitting device 3 , and the comparative light emitting device 4 with respect to driving time. Fig.32 1 and 2 are the brightness-current density characteristics of the light-emitting devices 5 to 7 and the comparative light-emitting device 8. Fig.33 ∥(R) and ∥(R) are the current efficiency-luminance characteristics of the light emitting devices 5 to 7. Fig.34 1 and 2 are current-voltage characteristics of the light emitting devices 5 to 7 and the comparative light emitting device 8. Fig.35 ∫ is the external quantum efficiency-brightness characteristic of the light-emitting devices 5 to 7. Fig.36 3 are emission spectra of light-emitting devices 5 to 7 and comparative light-emitting device 8. Fig.37 It is a diagram showing the change in brightness of the light-emitting devices 5 to 7 and the comparative light-emitting device 8 with respect to the driving time. Modes for Carrying Out the Invention

[0038] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that the mode and details thereof can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0039] (Implementation Method 1) In this embodiment, a light-emitting device which is one embodiment of the present invention and an organic compound which is one embodiment of the present invention and can be used for the light-emitting device which is one embodiment of the present invention are described.

[0040] <<Basic structure of light emitting device>> First, a basic structure of a light-emitting device according to one embodiment of the present invention will be described. Figure 1AA light-emitting device 100 is shown, which includes an EL layer including a light-emitting layer between a pair of electrodes. Specifically, an EL layer 103 is sandwiched between a first electrode 101 and a second electrode 102. The EL layer 103 preferably includes at least a light-emitting substance and a first organic compound. Thus, a light-emitting device having a low driving voltage and low power consumption can be provided. In addition, a light-emitting device having a high light-emitting efficiency can be provided. In addition, a light-emitting device having a high reliability can be realized. In addition, a light-emitting device having a good carrier balance can be provided.

[0041] also, Figure 1B It is shown that there are multiple ( Figure 1B In the embodiment, a light-emitting device 100 has a stacked structure (tandem structure) including two EL layers (103a, 103b) and a charge generation layer 106 between the EL layers. A light-emitting device having a tandem structure can realize a high-efficiency light-emitting device without changing the amount of current. Each EL layer (103a, 103b) contains at least a light-emitting substance and a first organic compound. Note that it is preferred that at least one of the EL layer 103a and the EL layer 103b contains a first organic compound. Thus, a tandem light-emitting device with a low driving voltage and low power consumption can be provided. In addition, a tandem light-emitting device with high luminous efficiency can be provided. In addition, a light-emitting device with a tandem structure having high reliability can be obtained. In addition, a tandem light-emitting device with good carrier balance can be provided.

[0042] also, Figure 1C The stacked structure of the EL layer 103 of the light-emitting device 100 according to one embodiment of the present invention is shown. Note that in this case, the first electrode 101 is used as an anode, and the second electrode 102 is used as a cathode. The EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are stacked in this order on the first electrode 101. In other words, in the EL layer 103, the light-emitting layer 113 is located between the first electrode 101 and the second electrode 102, the hole transport layer 112 is located between the first electrode 101 and the light-emitting layer 113, the electron transport layer 114 is located between the light-emitting layer 113 and the second electrode 102, the hole injection layer 111 is located between the first electrode 101 and the hole transport layer 112, and the electron injection layer 115 is located between the electron transport layer 114 and the second electrode 102. When the EL layer 103 has the above-mentioned stacked structure, it is preferred that one or more of the hole injection layer 111, the hole transport layer 112 and the light-emitting layer 113 contain the first organic compound. More preferably, one or more of the hole injection layer 111 and the hole transport layer 112 contain the first organic compound. Thus, a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high light-emitting efficiency can be provided. In addition, a light-emitting device with high reliability can be provided.

[0043] Figure 1D Show Figure 1C A modified example of the stacked structure shown. In this case, the first electrode 101 is used as an anode and the second electrode 102 is used as a cathode. In this modified example, the hole transport layer 112 and the electron transport layer 114 both have a two-layer stacked structure. In other words, the EL layer 103 has a structure in which a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light-emitting layer 113, a second electron transport layer 114-2, a first electron transport layer 114-1 and an electron injection layer 115 are sequentially stacked on the first electrode 101. The light-emitting layer 113 is located between the first electrode 101 and the second electrode 102. In addition, the first hole transport layer 112-1 is located between the first electrode 101 and the light-emitting layer 113. In addition, the first electron transport layer 114-1 is located between the light-emitting layer 113 and the second electrode 102. In addition, the hole injection layer 111 is located between the first electrode 101 and the hole transport layer 112. In addition, the electron injection layer 115 is located between the electron transport layer 114 and the second electrode 102. In addition, the second hole transport layer 112-2 is located between the first hole transport layer and the light-emitting layer 113. In addition, it can also be said that the second electron transport layer 114-2 is located between the light-emitting layer 113 and the first electron transport layer 114-1. When the EL layer 103 has the above-mentioned stacked structure, it is preferred that one or more of the hole injection layer 111, the hole transport layer 112 and the light-emitting layer 113 contain a first organic compound. In addition, it is more preferred that the first hole transport layer 112-1 in the stacked structure of the hole transport layer 112 contains a first organic compound. Thus, a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high luminous efficiency can be provided. In addition, a light-emitting device with high reliability can be provided.

[0044] The second hole transport layer 112-2 is provided, for example, to prevent electrons from passing through the first electrode 101 from the light-emitting layer 113. Therefore, the second hole transport layer 112-2 may also be referred to as an electron blocking layer. In addition, the second electron transport layer 114-2 is provided, for example, to prevent holes from passing through the second electrode 102 from the light-emitting layer 113. Therefore, the second electron transport layer 114-2 may also be referred to as a hole blocking layer.

[0045] Figure 1EThe light-emitting device 100 shown is a light-emitting device with a series structure. Since it has a microcavity structure, light of different wavelengths (monochromatic light) can be extracted from each EL layer (103a, 103b). Therefore, there is no need to coat separately (for example, coating as R, G, B) to obtain different luminous colors. Thus, high resolution can be easily achieved. In addition, it can be combined with a coloring layer (color filter). In addition, the luminous intensity in the front direction with a specific wavelength can be enhanced, thereby achieving low power consumption. The EL layer 103a has a structure in which a hole injection layer 111a, a hole transport layer 112a, a light-emitting layer 113a, an electron transport layer 114a and an electron injection layer 115a are stacked in sequence, and the EL layer 103b has a structure in which a hole injection layer 111b, a hole transport layer 112b, a light-emitting layer 113b, an electron transport layer 114b and an electron injection layer 115b are stacked in sequence. When each EL layer (103a, 103b) is a light-emitting device of a series structure having such a stacked structure, one or more of the hole injection layer (111a, 111b), the hole transport layer (112a, 112b) and the light-emitting layer (113a, 113b) contains a first organic compound. More preferably, one or more of the hole injection layer (111a, 111b) and the hole transport layer (112a, 112b) contains a first organic compound. Thus, a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high luminous efficiency can be provided. In addition, a light-emitting device with high reliability can be provided. In addition, voltage fluctuations relative to the initial voltage in a driving test can be suppressed.

[0046] Figure 1F The light emitting device 100 shown is Figure 1B An example of a light-emitting device of a tandem structure is shown in the figure, in which three EL layers (103a, 103b, 103c) are stacked in a manner of sandwiching a charge generation layer (106a, 106b). The three EL layers (103a, 103b, 103c) respectively include a light-emitting layer (113a, 113b, 113c), and the light-emitting color of each light-emitting layer can be freely combined. For example, the light-emitting layer 113a can be made blue, the light-emitting layer 113b can be made red, green or yellow, and the light-emitting layer 113c can be made blue. In addition, the light-emitting layer 113a can be made red, the light-emitting layer 113b can be made blue, green or yellow, and the light-emitting layer 113c can be made red. Each EL layer (103a, 103b, 103c) contains at least a light-emitting substance and a first organic compound. Note that at least one of the EL layers (103a, 103b, 103c) only needs to contain the first organic compound.

[0047] Next, the hole injection layer (111, 111a, 111b), the hole transport layer (112, 112a, 112b) and the light emitting layer (113, 113a, 113b, 113c) which can use the first organic compound in the light emitting device 100 are described.

[0048] The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101 of the anode and the charge generation layer (106, 106a, 106b) into the EL layer (103, 103a, 103b), and contains an organic acceptor material (electron acceptor material) or a material with high hole injection property. As a material with high hole injection property, a mixed material containing an organic acceptor material and a hole transport material can also be used. For example, in the hole injection layer (111, 111a, 111b), a first organic compound can be used as a hole transport material. By using a first organic compound with high hole transport property for the hole injection layer (111, 111a, 111b), a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high luminous efficiency can be provided. In addition, a light-emitting device with high reliability can be provided.

[0049] The hole transport layer (112, 112a, 112b) is a layer that transports holes injected from the hole injection layer (111, 111a, 111b) from the first electrode 101 to the light-emitting layer (113, 113a, 113b). In addition, the hole transport layer (112, 112a, 112b) is a layer containing a hole transport material. Therefore, as the hole transport layer (112, 112a, 112b), a hole transport material that can be used for the hole injection layer (111, 111a, 111b) can be used. For example, in the hole transport layer (112, 112a, 112b), a first organic compound can be used as a hole transport material. By using a first organic compound with high hole transport properties for the hole transport layer (112, 112a, 112b), a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high luminous efficiency can be provided. Furthermore, a light emitting device with high reliability can be provided.

[0050] In addition, it is more preferred to use the first organic compound for both the hole injection layer (111, 111a, 111b) and the hole transport layer (112, 112a, 112b). By adopting this structure, the HOMO energy level difference between the hole injection layer (111, 111a, 111b) and the hole transport layer (112, 112a, 112b) becomes smaller. As a result, holes are smoothly injected from the hole injection layer (111, 111a, 111b) into the hole transport layer (112, 112a, 112b), so the driving voltage of the light-emitting device can be further reduced. As a result, a light-emitting device with low power consumption can be provided. In addition, a light-emitting device with high luminous efficiency can be provided. In addition, a light-emitting device with high reliability can be provided.

[0051] The light-emitting layer (113, 113a, 113b, 113c) contains a light-emitting substance (guest material) and one or more other substances (host material, etc.) in appropriate combination, so that fluorescent light or phosphorescent light exhibiting a desired light emission color can be obtained.

[0052] Examples of organic compounds used as a host material include organic compounds such as hole transport materials and electron transport materials that meet the conditions for a host material for the light-emitting layer. In the light-emitting layer 113, the first organic compound can also be used as a host material. Thus, a light-emitting device with good carrier balance can be provided.

[0053] When the first organic compound is used in one or both of the hole injection layer (111, 111a, 111b) and the hole transport layer (112, 112a, 112b), the driving voltage of the light-emitting device tends to be high when the highest occupied molecular orbital (HOMO) energy level of the first organic compound is high. For this reason, the HOMO energy level of the first organic compound is preferably -5.40 eV or less (refer to Figure 2 ). Therefore, holes can be smoothly transferred from the layer containing the first organic compound to the light-emitting layer. Thus, the driving voltage of the light-emitting device can be reduced and the light-emitting efficiency can be improved.

[0054] When the first organic compound is used in one or both of the hole injection layer (111, 111a, 111b) and the hole transport layer (112, 112a, 112b), the HOMO level of the first organic compound is preferably higher than the HOMO level of the host material contained in the light-emitting layer 113 (see Figure 2). In addition, under the same circumstances, the difference between the HOMO energy level of the first organic compound and the HOMO energy level of the main material (hereinafter, simply referred to as the main material) contained in the light-emitting layer 113 is preferably 0.60 eV or less. As a result, the barrier caused by the HOMO energy level steps between the layers is reduced, so that holes can be smoothly transmitted to the light-emitting layer. As a result, the driving voltage of the light-emitting device can be reduced and the luminous efficiency of the light-emitting device can be improved. Note that under the same circumstances, it is assumed that the main material is an organic compound different from the first organic compound.

[0055] In addition, Figure 1D In the case where the hole transport layer 112 shown in the figure has a stacked structure of a first hole transport layer 112-1 and a second hole transport layer 112-2 and the first organic compound is used in one or both of the hole injection layer 111 and the first hole transport layer 112-1, the HOMO energy level of the first organic compound is preferably higher than the HOMO energy level of the material used for the second hole transport layer 112-2 (hereinafter referred to as the electron blocking material), and the HOMO energy level of the electron blocking material is preferably higher than the HOMO energy level of the host material (refer to Figure 2 ). In addition, under the same circumstances, the difference (ΔE1) between the HOMO energy level of the first organic compound and the HOMO energy level of the electron blocking material is preferably 0.30 eV or less, and more preferably 0.10 eV or less. In addition, under the same circumstances, the difference (ΔE2) between the HOMO energy level of the electron blocking material and the HOMO energy level of the host material is preferably 0.30 eV or less. In addition, under the same circumstances, the difference (ΔE3) between the HOMO energy level of the first organic compound and the HOMO energy level of the host material is preferably 0.60 eV or less. In addition, under the same circumstances, from the point of view of the driving voltage, it is more preferred that the HOMO energy level of the electron blocking material is below -5.50 eV, and the thickness of the second hole transport layer 112-2 is below 200 nm. By adopting the above structure, the barrier caused by the HOMO energy level steps between the layers is reduced, so that holes can be smoothly transmitted to the light-emitting layer. Therefore, the driving voltage of the light-emitting device can be reduced, so that a low-power light-emitting device can be provided, and since the luminous efficiency can be improved, a light-emitting device with high reliability can be realized. In addition, voltage fluctuation with respect to the initial voltage in the drive test can be suppressed.

[0056] Note that the HOMO level and LUMO (Lowest Unoccupied Molecular Orbital) level values ​​used in this specification can be obtained by electrochemical measurement. Typical examples of electrochemical measurement include cyclic voltammetry (CV) measurement and differential pulse voltammetry (DPV) measurement.

[0057] In cyclic voltammetry (CV) measurements, the oxidation peak potential (E pa ) and reduction peak potential (E pc ) to calculate the HOMO energy level and the LUMO energy level (E). In the measurement, the HOMO energy level is calculated from the potential scan in the positive direction, and the LUMO energy level is calculated from the potential scan in the negative direction. In addition, the scanning speed in the measurement is 0.1 V / s.

[0058] The specific calculation method of HOMO energy level and LUMO energy level is described. pa ) and reduction peak potential (E pc ) to calculate the standard redox potential (E o )(=(E pa +E pc ) / 2), from the potential energy of the reference electrode relative to the vacuum level (E x ) minus the standard redox potential (E o ), from which the HOMO energy level and LUMO energy level values ​​(E) (=E x -E o ).

[0059] Note that the above shows the case where a reversible redox wave is obtained. In the case where an irreversible redox wave is obtained, the oxidation peak potential (E pa ) minus a certain value (0.1 eV) is assumed to be the reduction peak potential (E pc ), calculate the standard redox potential (E o ), and the HOMO energy level is calculated. pc ) plus a certain value (0.1 eV) is assumed to be the oxidation peak potential (E pa ), calculate the standard redox potential (E o ), and the LUMO level is calculated from this.

[0060] Thus, by adopting the above structure, a light emitting device with low driving voltage and low power consumption can be provided. In addition, a light emitting device with high light emitting efficiency can be provided. In addition, a light emitting device with high reliability can be provided.

[0061] In addition, by using the light-emitting device of one embodiment of the present invention, a light-emitting device or a light-receiving light-emitting device can be provided. Note that the light-receiving light-emitting device of one embodiment of the present invention using the first organic compound will be described in detail in the following embodiment.

[0062] Next, the first organic compound of the organic compound of one embodiment of the present invention which can be used in the light-emitting device of one embodiment of the present invention is described in detail.

[0063] The first organic compound is an amine compound including a substituted or unsubstituted benzo[b]naphtho[1,2-d]furanyl group or a substituted or unsubstituted benzo[b]naphtho[1,2-d]thienyl group, a substituted or unsubstituted first aryl group, and a substituted or unsubstituted second aryl group.

[0064] A portion of the HOMO of the amine compound is distributed in the benzene skeleton directly bonded to the nitrogen atom in the benzo[b]naphtho[1,2-d]furan skeleton or the benzo[b]naphtho[1,2-d]thiophene skeleton, and the electron density of the benzene skeleton can be reduced due to the influence of the oxygen atom of the benzo[b]naphtho[1,2-d]furan skeleton or the sulfur atom of the benzo[b]naphtho[1,2-d]thiophene skeleton. Thus, the HOMO energy level of the amine compound can be reduced.

[0065] In addition, in the above-mentioned amine compound, LUMO is easily distributed in the benzo [b] naphtho [1,2-d] furan skeleton or benzo [b] naphtho [1,2-d] thiophene skeleton, and is not easily distributed in the nitrogen atom, the first aryl group and the second aryl group at the center of the amine compound. This is because the benzo [b] naphtho [1,2-d] furan skeleton and the benzo [b] naphtho [1,2-d] thiophene skeleton have a naphthalene structure in the skeleton, so the conjugation is extended and it is easy to accept electrons. By introducing the benzo [b] naphtho [1,2-d] furan skeleton or the benzo [b] naphtho [1,2-d] thiophene skeleton into the amine compound, an amine compound with high tolerance to repeated reduction can be achieved. Therefore, by using this first organic compound, a light-emitting device with high reliability can be provided.

[0066] In a light-emitting device of a conventional structure, electrons may pass from the light-emitting layer through the anode side, causing the hole injection layer, the hole transport layer, etc. to deteriorate. This is because the hole transport material used in these layers has low resistance to repeated reduction.

[0067] On the other hand, the first organic compound has high resistance to repeated reduction. Therefore, by using the first organic compound in one or both of the hole injection layer 111 and the first hole transport layer 112-1, even if electrons pass through the second electrode 102 (anode) side from the light-emitting layer, it is not easy to deteriorate. Therefore, by using the first organic compound, a light-emitting device with high reliability can be realized. In addition, Figure 1D As shown, in a light-emitting device including a second hole transport layer 112-2 arranged in a manner to prevent electrons from passing from the light-emitting layer 113 through the first electrode 101 side, degradation of the hole injection layer 111 and the first hole transport layer 112-1 can be more effectively suppressed, so it is preferred.

[0068] In addition, the first organic compound is more preferably an amine compound comprising a substituted or unsubstituted benzo[b]naphtho[1,2-d]furanyl group, a substituted or unsubstituted first aryl group, and a substituted or unsubstituted second aryl group. Compared with the case of introducing a benzo[b]naphtho[1,2-d]thienyl group, the introduction of a benzo[b]naphtho[1,2-d]furanyl group can further reduce the refractive index of the organic compound. By using an organic compound with a lower refractive index, the light extraction efficiency of the light-emitting device can be improved, so it is preferred.

[0069] Note that in this specification, etc., benzo[b]naphtho[1,2-d]furan may be abbreviated as benzonaphthofuran. In addition, in this specification, etc., a benzo[b]naphtho[1,2-d]furanyl group, which is a substituent obtained by removing one hydrogen from benzo[b]naphtho[1,2-d]furan, may be referred to as benzonaphthofuranyl group.

[0070] Note that in this specification, benzo[b]naphtho[1,2-d]thiophene may be simply referred to as benzonaphthothiophene. In addition, in this specification, benzo[b]naphtho[1,2-d]thiophene, which is a substituent obtained by removing one hydrogen from benzo[b]naphtho[1,2-d]thiophene, may be referred to as benzonaphthothiophene.

[0071] Examples of the first aryl group and the second aryl group that can be used in the first organic compound include substituted or unsubstituted aromatic hydrocarbon groups having 6 to 60 carbon atoms. In this embodiment, specific examples of the aromatic hydrocarbon group having 6 to 60 carbon atoms will be described later.

[0072] Hereinafter, specific examples of the first organic compound will be described using general formulae (G10), (G11), and (G1) to (G5).

[0073] Specific examples of the first organic compound include organic compounds represented by the following general formula (G10).

[0074] [Chemical formula 7]

[0075] Here, in the above general formula (G10), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g10), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 and each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g10), Ar 1 and Ar 2 Each independently represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms.

[0076] In the above general formula (G10), the carbon at the 6th or 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton is bonded to the nitrogen atom, thereby forming an arylamine compound. In this way, by adopting a structure in which the carbon at the 6th or 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton is bonded to the nitrogen atom, due to the influence of the oxygen atom of the benzonaphthofuran skeleton or the sulfur atom of the benzonaphthothiophene skeleton, the electron density of the benzene skeleton directly bonded to the nitrogen atom in the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton can be reduced, thereby easily obtaining the effect of reducing the HOMO energy level of the organic compound. Thus, a material having a desired HOMO energy level that conforms to the light-emitting device structure of the present invention can be provided. Therefore, by using the first organic compound for the light-emitting device, hole injection and transmission can be smoothly performed in the light-emitting device, thereby suppressing the voltage variation relative to the initial voltage in the drive test.

[0077] In addition, specific examples of the first organic compound include organic compounds represented by the following general formula (G11).

[0078] [Chemical formula 8]

[0079] Here, in the above general formula (G11), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g11), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g11), Ar 2 represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, R 9 and R 10 each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group, and R 11 To R 18 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom.

[0080] The difference between the general formula (G11) and the general formula (G10) is that the general formula (G11) replaces Ar in the general formula (G10) with 1 The 9H-fluorenyl group is limited. By introducing the 9H-fluorenyl group, the hole transport property of the first organic compound can be further improved. In addition, it is also preferred from the viewpoint of improving heat resistance.

[0081] Note that as the organic compound used for the light-emitting device of one embodiment of the present invention, it is more preferable to use an organic compound represented by the following general formulas (G1) to (G5).

[0082] Specific examples of the first organic compound include organic compounds represented by the following general formula (G1).

[0083] [Chemical formula 9]

[0084] Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom.

[0085] The difference between the general formula (G1) and the general formula (G11) is that: In order to explain Ar in the general formula (G11) more specifically 2 , the general formula (G11) is limited to the m-terphenyl-4'-group. Since the steric hindrance of the m-terphenyl-4'-group is greater than that of the p-terphenyl group, it has the effect of inhibiting the intramolecular motion. By introducing the m-terphenyl-4'-group, the glass transition point of the first organic compound can be increased. Therefore, the heat resistance of the light-emitting device using the first organic compound can be improved, and the reliability can be improved.

[0086] In addition, specific examples of the first organic compound include organic compounds represented by the following general formula (G2).

[0087] [Chemical formula 10]

[0088] Here, in the above general formula (G2), Q is an oxygen atom or a sulfur atom. 1 To R 8 , R 11 To R 31 and B each independently represent any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom. 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 They may also be bonded to each other to form a spiro ring structure.

[0089] The general formula (G2) is different from the general formula (G1) in that the bonding position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton to the nitrogen atom is limited to the 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton. In this way, by adopting a structure in which the carbon at the 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton is bonded to the nitrogen atom, a compound with a high phosphorescence energy level can be realized, and when it is used in a phosphorescent light-emitting device, a high luminous efficiency can be achieved.

[0090] In addition, specific examples of the first organic compound include organic compounds represented by the following general formula (G3).

[0091] [Chemical formula 11]

[0092] Here, in the above general formula (G3), Q is an oxygen atom or a sulfur atom. 1 To R 8 , R 11 To R 31 and A each independently represent any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom. 9 and R 10Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 They may also be bonded to each other to form a spiro ring structure.

[0093] The general formula (G2) is different from the general formula (G1) in that the bonding position between the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton and the nitrogen atom is limited to the 6th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton.

[0094] In addition, specific examples of the first organic compound include organic compounds represented by the following general formula (G4).

[0095] [Chemical formula 12]

[0096] Here, in the above general formula (G4), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g4), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g6), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group, and may also be represented by R 9 and R 10 Bonded to each other to form a spiro ring structure, R 11 To R 16 and R 18 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms.

[0097] The difference between general formula (G4) and general formula (G1) is that the bonding position between the 9H-fluorenyl group and the nitrogen atom is limited to position 2. By setting the bonding position between the 9H-fluorenyl group and the nitrogen atom to position 2, the HOMO level of (G4) can be adjusted to a more appropriate value.

[0098] Note that as the organic compound used for the light-emitting device of one embodiment of the present invention, it is more preferable to use an organic compound represented by the following general formula (G5).

[0099] In addition, specific examples of the first organic compound include organic compounds represented by the following general formula (G5).

[0100] [Chemical formula 13]

[0101] Here, in the above general formula (G5), Q is an oxygen atom or a sulfur atom. 1 To R 8 , R 11 To R 16 , and R 18 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 They may also be bonded to each other to form a spiro ring structure.

[0102] The general formula (G5) is different from the general formula (G4) in that the bonding position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton to the nitrogen atom is limited to the 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton. In this way, by adopting a structure in which the carbon at the 8th position of the benzonaphthofuran skeleton or the benzonaphthothiophene skeleton is bonded to the nitrogen atom, a compound with a high phosphorescence energy level can be realized, and when it is used in a phosphorescent light-emitting device, a high luminous efficiency can be achieved.

[0103] Note that in the organic compounds represented by the above general formulas (G10), (G11), (G1) to (G5), when Q is an oxygen atom, the organic compound may have a lower refractive index than a compound containing a sulfur atom. By using an organic compound with a lower refractive index, the light extraction efficiency of the light-emitting device can be improved, so it is preferred.

[0104] Next, specific examples of alkyl groups having 1 to 6 carbon atoms, cyclic saturated hydrocarbon groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, halogens, halogenated alkyl groups having 1 to 6 carbon atoms, and aromatic hydrocarbon groups having 6 to 60 carbon atoms that can be used in the first organic compound are described. Note that the groups that can be used in the first organic compound are not limited to the following specific examples. In addition, some or all of the hydrogen atoms in the alkyl groups having 1 to 6 carbon atoms, cyclic saturated hydrocarbon groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, halogens, halogenated alkyl groups having 1 to 6 carbon atoms, and aromatic hydrocarbon groups having 6 to 60 carbon atoms may also be deuterium.

[0105] <<Specific examples of the alkyl group having 1 to 6 carbon atoms>> Specific examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, sec-hexyl, tert-hexyl, neohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl and 2,3-dimethylbutyl.

[0106] <<Specific examples of the cyclic saturated hydrocarbon group having 3 to 6 carbon atoms>> Specific examples of the cyclic saturated hydrocarbon group having 3 to 6 carbon atoms include cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl.

[0107] <<Specific examples of the alkoxy group having 1 to 6 carbon atoms>> Specific examples of the alkoxy group having 1 to 6 carbon atoms include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert-butoxy, n-pentoxy, isopentoxy, sec-pentoxy, tert-pentoxy, neopentoxy, n-hexoxy, isohexoxy, sec-hexoxy, tert-hexoxy, neohexyloxy and cyclohexyloxy.

[0108] <<Specific examples of halogen>> Specific examples of halogen include fluorine, chlorine, bromine, iodine and the like.

[0109] <<Specific examples of the halogenated alkyl group having 1 to 6 carbon atoms>> Specific examples of the halogenated alkyl group having 1 to 6 carbon atoms include groups in which one or more of the hydrogen atoms of the above-mentioned alkyl group having 1 to 6 carbon atoms are substituted by the above-mentioned halogen. More specifically, fluoromethyl, difluoromethyl, difluorochloromethyl, trifluoromethyl, chloromethyl, dichloromethyl, bromomethyl, 1,1-difluoroethyl, 2,2,2-trifluoroethyl, 1,1,2,2-tetrafluoroethyl, pentafluoroethyl, 3,3,3-trifluoropropyl, 1,1,1,3,3,3-hexafluoroisopropyl, and 1,1,2,2,3,3,3-heptafluoropropyl can be mentioned.

[0110] <<Aromatic hydrocarbon group having 6 to 60 carbon atoms>> Specific examples of aromatic hydrocarbon groups having 6 to 60 carbon atoms include substituents represented by the following structural formulae (Ar-1) to (Ar-21). Note that there is no limitation on the substitution positions of the following structural formulae (Ar-1) to (Ar-21).

[0111] [Chemical formula 14]

[0112] In addition, when the aromatic hydrocarbon group having 6 to 60 carbon atoms further has a substituent, as the substituent, a cyano group, the above-mentioned alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and an aromatic hydrocarbon having 6 to 60 carbon atoms can be used. Note that specific examples of the alkyl group having 1 to 6 carbon atoms, the cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, the alkoxy group having 1 to 6 carbon atoms, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and an aromatic hydrocarbon having 6 to 60 carbon atoms can refer to the above-mentioned specific examples.

[0113] Next, specific examples of the first organic compound are shown in the form of structural formulas. First, specific examples of organic compounds represented by general formulas (G10) and (G11) are shown below.

[0114] [Chemical formula 15]

[0115] [Chemical formula 16]

[0116] Next, specific examples of organic compounds represented by the above-mentioned general formulae (G1) to (G4) are shown below. In addition, the above-mentioned general formulae (G1) to (G4) are general formulae that specifically limit a part of the structure of the above-mentioned general formulae (G10) and (G11), so the following specific examples can also be said to be specific examples of organic compounds represented by the above-mentioned general formulae (G10), (G11) and (G1) to (G4).

[0117] [Chemical formula 17]

[0118] [Chemical formula 18]

[0119] Next, specific examples of organic compounds represented by the general formula (G5) are shown below. In addition, the general formula (G5) is a general formula that specifically limits a part of the structure of the general formulas (G10), (G11), and (G1) to (G4), so the following specific examples can also be said to be specific examples of organic compounds represented by the general formulas (G10), (G11), (G1) to (G5).

[0120] [Chemical formula 19]

[0121] [Chemical formula 20]

[0122] The organic compounds represented by the above structural formulas (100) to (119), (200) to (213) and (300) to (311) are examples of organic compounds represented by the above general formulas (G10), (G11), (G1) to (G4) and (G5), and the organic compounds that can be used as the first organic compound are not limited to these.

[0123] Next, as an example of an organic compound that can be used as the first organic compound, a method for synthesizing an organic compound represented by the following general formula (G5) is described. Note that various reactions can be used as a method for synthesizing the general formula (G5) and it is not limited to the following method.

[0124] [Chemical formula 21]

[0125] Here, in the above general formula (G5), Q is an oxygen atom or a sulfur atom. 1 To R 8 , R 11 To R 16 , and R 18 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. 9 and R 10Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 They may also be bonded to each other to form a spiro ring structure.

[0126] <<Method for synthesizing organic compounds represented by general formula (G5)>> The organic compound represented by the general formula (G5) of the present invention can be synthesized by the following synthesis schemes (A-1) and (A-2).

[0127] First, a synthesis scheme (A-1a) which is an example of the synthesis scheme (A-1) is described. By coupling an aryl compound (Compound 1) and an arylamine compound (Compound 2), an arylamine compound (Compound 3) can be obtained. The synthesis scheme (A-1a) is shown below.

[0128] [Chemical formula 22]

[0129] The arylamine compound (Compound 3) can also be obtained by a synthesis scheme (A-1b) which is another example of the synthesis scheme (A-1). The arylamine compound (Compound 4) and the aryl compound (Compound 5) can be coupled to obtain the arylamine compound (Compound 3). The synthesis scheme (A-1b) is shown below.

[0130] [Chemical formula 23]

[0131] Next, the synthesis scheme (A-2) is described. By coupling an arylamine compound (Compound 3) and an aryl compound (Compound 6), the target arylamine compound (G5) can be obtained. The synthesis scheme (A-2) is shown below.

[0132] [Chemical formula 24]

[0133] Alternatively, the target compound (G5) can also be obtained through the synthesis scheme (A-3) and the synthesis scheme (A-4).

[0134] First, a synthesis scheme (A-3a) which is an example of the synthesis scheme (A-3) is described. By coupling an aryl compound (Compound 6) and an arylamine compound (Compound 2), an arylamine compound (Compound 7) can be obtained. The synthesis scheme (A-3a) is shown below.

[0135] [Chemical formula 25]

[0136] The arylamine compound (Compound 7) can also be obtained by a synthesis scheme (A-3b) which is another example of the synthesis scheme (A-3). The arylamine compound (Compound 8) and the aryl compound (Compound 5) can be coupled to obtain the arylamine compound (Compound 7). The synthesis scheme (A-3b) is shown below.

[0137] [Chemical formula 26]

[0138] Next, the synthesis scheme (A-4) is described. By coupling an aryl compound (Compound 1) and an arylamine compound (Compound 7), the target arylamine compound (G5) can be obtained. The synthesis scheme (A-4) is shown below.

[0139] [Chemical formula 27]

[0140] Alternatively, the target compound (G5) can be obtained by the synthesis scheme (A-5) and the synthesis scheme (A-6).

[0141] First, a synthesis scheme (A-5a) which is an example of the synthesis scheme (A-5) is described. By coupling an arylamine compound (compound 4) and an aryl compound (compound 6), an arylamine compound (compound 9) can be obtained. The synthesis scheme (A-5a) is shown below.

[0142] [Chemical formula 28]

[0143] The arylamine compound (Compound 9) can also be obtained by another example of the synthesis scheme (A-5) of the synthesis scheme (A-5b). The arylamine compound (Compound 9) can be obtained by coupling the aryl compound (Compound 1) and the arylamine compound (Compound 8). The synthesis scheme (A-5b) is shown below.

[0144] [Chemical formula 29]

[0145] Next, the synthesis scheme (A-6) is described. By coupling an arylamine compound (Compound 9) and an aryl compound (Compound 5), the target arylamine compound (G5) can be obtained. The synthesis scheme (A-6) is shown below.

[0146] [Chemical formula 30]

[0147] In the above-mentioned synthesis schemes (A-1) to (A-6), X 1 To X 3 Each independently represents chlorine, bromine, iodine, or a triflate group. The halogen is preferably chlorine, bromine, or iodine. In consideration of reactivity, bromine or iodine is more preferred. In consideration of cost, chlorine or bromine is more preferred.

[0148] When the Buchwald-Hartwig reaction using a palladium catalyst is carried out in the synthesis schemes (A-1) to (A-6), palladium compounds such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]dichloropalladium(II), tetrakis(triphenylphosphine)palladium(0), and allylpalladium(II) chloride dimer, as well as ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(o-tolyl)phosphine, (S)-(6,6'-dimethoxybiphenyl-2,2'-diyl)bis(diisopropylphosphine) (abbreviated as: cBRIDP) can be used. In this reaction, an organic base such as sodium tert-butoxide or an inorganic base such as potassium carbonate, cesium carbonate, sodium carbonate, etc. can be used. In this reaction, as a solvent, toluene, xylene, benzene, tetrahydrofuran, dioxane, etc. can be used. Note that the reagents that can be used in the above reaction are not limited to the above reagents.

[0149] In addition, in the synthesis schemes (A-1) to (A-6), Ullmann reaction using copper or a copper compound can also be performed. In this reaction, copper or a copper compound can be used. As the base used, inorganic bases such as potassium carbonate can be mentioned. As the solvent that can be used for this reaction, Examples include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)pyrimidone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, the target product can be obtained in a short time with a high yield when the reaction temperature is above 100°C, so DMPU and xylene with a high boiling point are preferably used. In addition, the reaction temperature is more preferably a high temperature of above 150°C, so DMPU is more preferably used. The reagents that can be used in the reaction are not limited to the above reagents.

[0150] The method for synthesizing the organic compound represented by the general formula (G5) has been described above, but the method for synthesizing the organic compound is not limited to the synthesis schemes (A-1) to (A-6).

[0151] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0152] (Implementation Method 2) In this embodiment, a light emitting device and a light receiving device that can be applied to a light emitting and receiving device of one embodiment of the present invention are described.

[0153] Figure 3A A schematic cross-sectional view of a light emitting device 805a and a light receiving device 805b included in a light emitting and receiving apparatus 810 according to one embodiment of the present invention is shown.

[0154] The light-emitting device 805a has a function of emitting light (hereinafter, also referred to as a light-emitting function). The light-emitting device 805a includes an electrode 801a, an EL layer 803a, and an electrode 802. The light-emitting device 805a is preferably a light-emitting device (organic EL device) using organic EL shown in Embodiment 1. Therefore, the EL layer 803a sandwiched between the electrode 801a and the electrode 802 includes at least a light-emitting layer. The light-emitting layer contains a light-emitting substance. By applying a voltage between the electrode 801a and the electrode 802, light is emitted from the EL layer 803a. In addition, the EL layer 803a contains the first organic compound shown in Embodiment 1. In addition to the light-emitting layer, the EL layer 803a may also include various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier (hole or electron) blocking layer, and a charge generation layer. For example, the first organic compound shown in Embodiment 1 can be used for one or both of the hole injection layer and the hole transport layer.

[0155] The light receiving device 805b has a function of detecting light (hereinafter, also referred to as a light receiving function). Specifically, as the light detected by the light receiving device 805b, visible light and infrared light can be cited. The light receiving device 805b can use a pn-type or pin-type photodiode, for example. The light receiving device 805b includes an electrode 801b, a light receiving layer 803b and an electrode 802. The light receiving layer 803b sandwiched between the electrode 801b and the electrode 802 includes at least an active layer. In addition, the light receiving layer 803b contains the first organic compound shown in embodiment 1. In addition, the light receiving layer 803b can also use the materials used for the various layers (hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, carrier (hole or electron) blocking layer, charge generation layer, etc.) included in the above-mentioned EL layer 803a. For example, the first organic compound shown in embodiment 1 can be used as a material for the hole injection layer and the hole transport layer included in the EL layer 803a.

[0156] The light receiving device 805b is used as a photoelectric conversion device, and can generate charge by light incident on the light receiving layer 803b, thereby extracting it as current. At this time, a voltage can also be applied between the electrode 801b and the electrode 802. The amount of charge generated depends on the amount of light incident on the light receiving layer 803b.

[0157] Note that the wavelength region of blue (B) in this specification and the like refers to a wavelength region of 400 nm or more and less than 490 nm, and blue (B) light has at least one emission spectrum peak in this wavelength region. In addition, the wavelength region of green (G) refers to a wavelength region of 490 nm or more and less than 580 nm, and green (G) light has at least one emission spectrum peak in this wavelength region. In addition, the wavelength region of red (R) refers to a wavelength region of 580 nm or more and less than 700 nm, and red (R) light has at least one emission spectrum peak in this wavelength region. In addition, in this specification and the like, the wavelength region of visible light refers to a wavelength region of 400 nm or more and less than 700 nm, and visible light has at least one emission spectrum peak in this wavelength region. In addition, the wavelength region of infrared (IR) refers to a wavelength region of 700 nm or more and less than 900 nm, and infrared (IR) light has at least one emission spectrum peak in this wavelength region.

[0158] The active layer of the light receiving device 805b includes a semiconductor. As the semiconductor, inorganic semiconductors such as silicon and organic semiconductors including organic compounds can be cited. As the light receiving device 805b, an organic semiconductor device (or an organic photodiode) including an organic semiconductor in the active layer is preferably used. Organic photodiodes are easy to achieve thinning, light weight and large area, and have a high degree of freedom in shape and design, so they can be applied to various display devices. In addition, by using an organic semiconductor, the EL layer 803a included in the light emitting device 805a and the light receiving layer 803b included in the light receiving device 805b can be formed by the same method (for example, vacuum evaporation), and a common manufacturing device can be used, so it is preferred. In addition, the first organic compound shown in Embodiment 1 can also be used for the active layer.

[0159] The light-receiving and emitting device of one embodiment of the present invention can appropriately use an organic EL device and an organic photodiode as the light-emitting device 805a and the light-receiving device 805b, respectively. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be built into a display device using an organic EL device. The light-receiving and emitting device of one embodiment of the present invention has a function of displaying an image and one or two of a camera function and a sensing function.

[0160] The electrode 801a and the electrode 801b are disposed on the same surface. Figure 3A The structure in which the electrode 801a and the electrode 801b are provided over the substrate 800 is shown. Note that the electrode 801a and the electrode 801b can be formed by, for example, processing a conductive film formed over the substrate 800 into an island shape. That is, the electrode 801a and the electrode 801b can be formed by the same step.

[0161] The substrate 800 may be a substrate having heat resistance that can withstand the formation of the light emitting device 805a and the light receiving device 805b. When an insulating substrate is used as the substrate 800, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, or the like, or an SOI substrate may be used.

[0162] In particular, the substrate 800 is preferably a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the above-mentioned insulating substrate or semiconductor substrate. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition, in addition to the above, an operation circuit, a storage circuit, etc. may also be constituted.

[0163] A conductive film that transmits visible light and infrared light is used for the electrodes 801a, 801b, and 802 that emit or incident light, and a conductive film that reflects visible light and infrared light is preferably used for the electrodes that do not emit or incident light.

[0164] The electrode 802 of the light-receiving and light-emitting device according to one embodiment of the present invention is used as one electrode of each of the light-emitting device 805a and the light-receiving device 805b.

[0165] Figure 3B 805a is higher than the electrode 802. In this case, the electrode 801a is used as the anode of the light-emitting device 805a, and the electrode 802 is used as the cathode. In addition, the electrode 801b of the light-receiving device 805b is lower than the electrode 802. Note that Figure 3B In order to easily understand the direction of current flow, the circuit mark of the light-emitting diode is shown on the left side of the light-emitting device 805a, and the circuit mark of the photodiode is shown on the right side of the light-receiving device 805b. In addition, the direction of carrier (electron and hole) flow is schematically shown by arrows in each device.

[0166] exist Figure 3B In the structure shown, when the electrode 801a is supplied with a first potential through the first wiring, the electrode 802 is supplied with a second potential through the second wiring, and the electrode 801b is supplied with a third potential through the third wiring, the magnitude relationship of the potentials satisfies the first potential>second potential>third potential.

[0167] Figure 3C805a is lower than the electrode 802. In this case, the electrode 801a is used as the cathode of the light-emitting device 805a, and the electrode 802 is used as the anode. In addition, the electrode 801b of the light-receiving device 805b has a lower potential than the electrode 802 and a higher potential than the electrode 801a. Note that Figure 3B In order to easily understand the direction of current flow, the circuit mark of the light-emitting diode is shown on the left side of the light-emitting device 805a, and the circuit mark of the photodiode is shown on the right side of the light-receiving device 805b. In addition, the direction of carrier (electron and hole) flow is schematically shown by arrows in each device.

[0168] exist Figure 3C In the structure shown, when the electrode 801a is supplied with a first potential through the first wiring, the electrode 802 is supplied with a second potential through the second wiring, and the electrode 801b is supplied with a third potential through the third wiring, the magnitude relationship of the potentials satisfies second potential>third potential>first potential.

[0169] Figure 4A A light-receiving and light-emitting device 810A is shown as a modified example of the light-receiving and light-emitting device 810. The light-receiving and light-emitting device 810A is different from the light-receiving and light-emitting device 810 in that the EL layer 803a and the light-receiving layer 803b of the light-receiving and light-emitting device 810A include a common layer 806 and a common layer 807. In the light-emitting device 805a, the common layer 806 and the common layer 807 are used as a part of the EL layer 803a. In addition, in the light-receiving device 805b, the common layer 806 and the common layer 807 are used as a part of the light-receiving layer 803b. In addition, the common layer 806 includes, for example, a hole injection layer and a hole transport layer. In addition, the common layer 807 includes, for example, an electron transport layer and an electron injection layer.

[0170] The common layer 806 preferably uses the first organic compound described in Embodiment 1. Thus, a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high light-emitting efficiency can be provided. In addition, a light-emitting device and a light-receiving device with high reliability can be realized.

[0171] By adopting a structure including the common layer 806 and the common layer 807, a light receiving device can be built in without significantly increasing the number of times of coating, thereby manufacturing the light receiving and emitting device 810A with high productivity.

[0172] Figure 4BA light-receiving and light-emitting device 810B is shown as a modified example of the light-receiving and light-emitting device 810. The light-receiving and light-emitting device 810A is different from the light-receiving and light-emitting device 810A in that, in the light-receiving and light-emitting device 810A, the EL layer 803a includes a layer 806a and a layer 807a, and the light-receiving layer 803b includes a layer 806b and a layer 807b. The layers 806a and 806b are respectively composed of different materials, for example, a hole injection layer and a hole transport layer. In addition, the layers 806a and 806b may also be composed of a common material. In addition, the layers 807a and 807b are respectively composed of different materials, for example, an electron transport layer and an electron injection layer. The layers 807a and 807b may also be composed of a common material.

[0173] The first organic compound described in Embodiment 1 is preferably used for the layers 806a and 806b. Thus, a light-emitting device having a low driving voltage and low power consumption can be provided. In addition, a light-emitting device having high luminous efficiency can be provided. In addition, a light-emitting device and a light-receiving device having high reliability can be realized.

[0174] In addition, for example, by selecting the most suitable material for constituting the light-emitting device 805a from the first organic compound described in Embodiment Mode 1 as the layer 806a and the layer 807a, and selecting the most suitable material for constituting the light-receiving device 805b from the first organic compound described in Embodiment Mode 1 as the layer 806b and the layer 807b, the performance of the light-emitting device 805a and the light-receiving device 805b in the light-receiving device 810B can be improved. Specifically, as the light-emitting device 805a, a light-emitting device with low driving voltage and low power consumption can be provided. In addition, a light-emitting device with high light-emitting efficiency can be provided. In addition, a light-emitting device with high reliability can be realized, and as the light-receiving device 805b, a light-receiving device with high light-receiving sensitivity and high efficiency can be realized.

[0175] also, Figure 4C A light-receiving and light-emitting device 810C is shown as a modified example of the light-receiving and light-emitting device 810A. The light-receiving and light-emitting device 810C is different from the light-receiving and light-emitting device 810A in that the common layer 806 of the light-receiving and light-emitting device 810C has a stacked structure of a common layer 806-1 and a common layer 806-2, and the common layer 807 has a stacked structure of a common layer 807-1 and a common layer 807-2. For example, the common layer 806-1 includes a first hole transport layer, the common layer 806-2 includes a second hole transport layer, the common layer 807-1 includes a first electron transport layer, and the common layer 807-2 includes a second electron transport layer.

[0176] The first organic compound is preferably used for any layer included in the common layer 806, and is particularly preferably used for the common layer 806-1. This can realize a light-emitting device and a light-receiving device with low driving voltage, low power consumption, high efficiency and high reliability.

[0177] In the case where the first organic compound is used for the common layer 806 (refer to Figure 4A and Figure 4C ) and layer 806a and layer 806b (refer to Figure 4B ), the HOMO energy level of the first organic compound is preferably below -5.40 eV. Thus, a light-emitting device and a light-receiving device with low driving voltage, low power consumption, high efficiency and high reliability can be obtained.

[0178] Note that the resolution of the light receiving device 805b shown in this embodiment can be 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, further preferably 400 ppi or more, further preferably 500 ppi or more, 2000 ppi or less, 1000 ppi or less, or 600 ppi or less. In particular, by configuring the light receiving device 805b with a resolution of 200 ppi or more and 600 ppi or more, preferably 300 ppi or more and 600 ppi or less, it can be appropriately used for fingerprint photography. When fingerprint recognition is performed using a light receiving and emitting device of one embodiment of the present invention, by improving the resolution of the light receiving device 805b, for example, feature points (Minutia) of the fingerprint can be extracted with high precision, thereby improving the accuracy of fingerprint recognition. In addition, when the resolution is 500 ppi or more, it can meet the specifications of the National Institute of Standards and Technology (NIST) and the like, so it is preferred. Note that, assuming that the resolution of the light-receiving device is 500 ppi, the size of each pixel is 50.8 μm, and it can be confirmed that the pitch for photographing fingerprint ridges (typically 300 μm to 500 μm) is sufficient for obtaining a picture.

[0179] The structure described in this embodiment mode can be used in combination with the structures described in other embodiment modes as appropriate.

[0180] (Implementation 3) In this embodiment, a light-emitting device which is one embodiment of the present invention is described in more detail.

[0181] <<Specific structure of the light emitting device>> Next, the specific structure of the light emitting device of one embodiment of the present invention is described. Figure 1E Note: Figure 1A , Figure 1C and Figure 1D The light emitting device having a single structure shown also has the same structure of the EL layer. Figure 1EIn the case where the light-emitting device shown has a microcavity structure, a reflective electrode is formed as the first electrode 101, and a semi-transmissive-semi-reflective electrode is formed as the second electrode 102. Thus, the electrodes can be formed using a desired electrode material alone or using a plurality of electrode materials in a single layer or a stacked layer. In addition, the second electrode 102 is formed by appropriately selecting a material after forming the EL layer 103b.

[0182] <First Electrode and Second Electrode> As materials for forming the first electrode 101 and the second electrode 102, the following materials can be appropriately combined if they can satisfy the functions of the above two electrodes. For example, metals, alloys, conductive compounds, and mixtures thereof can be appropriately used. Specifically, In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide can be cited. In addition to the above, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper Metals such as copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys thereof are suitably combined. In addition to the above, rare earth metals such as elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), europium (Eu), ytterbium (Yb), and alloys thereof are suitably combined, as well as graphene, etc. can be used.

[0183] exist Figure 1E In the light-emitting device shown, when the first electrode 101 is an anode, the hole injection layer 111a and the hole transport layer 112a of the EL layer 103a are sequentially stacked on the first electrode 101 by vacuum evaporation. After the EL layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the EL layer 103b are sequentially stacked on the charge generation layer 106 in the same manner as described above.

[0184] In addition, Figure 1E In the light-emitting device shown, by making the first electrode 101 a reflective electrode, making the second electrode 102 a semi-transmissive-semi-reflective electrode and adopting an optical microcavity resonator (microcavity) structure, the light obtained from the light-emitting layer 113 in the EL layer 103 can resonate between the above-mentioned electrodes, thereby enhancing the light emitted from the second electrode 102.

[0185] In the case where the first electrode 101 of the light-emitting device is a reflective electrode composed of a laminated structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), optical adjustment can be performed by controlling the thickness of the transparent conductive film. Specifically, it is preferably adjusted in the following manner: when the wavelength of light obtained from the light-emitting layer 113 is λ, the optical distance (the product of thickness and refractive index) between the first electrode 101 and the second electrode 102 is mλ / 2 (note that m is an integer greater than 1) or a value close thereto.

[0186] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained to (2m'+1)λ / 4 (note that m' is an integer greater than 1) or a value in the vicinity thereof. Note that the "light-emitting region" described here refers to the region where holes and electrons in the light-emitting layer 113 recombine.

[0187] By performing the above optical adjustment, the spectrum of specific monochromatic light that can be obtained from the light-emitting layer 113 can be narrowed, thereby obtaining light emission with good color purity.

[0188] In addition, in the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 can be said to be the total thickness from the reflective region in the first electrode 101 to the reflective region in the second electrode 102. However, since it is difficult to accurately determine the positions of the reflective regions in the first electrode 101 and the second electrode 102, the above effect can be fully obtained by assuming that any position in the first electrode 101 and the second electrode 102 is a reflective region. In addition, strictly speaking, the optical distance between the first electrode 101 and the light-emitting layer that can obtain the desired light can be said to be the optical distance between the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light. However, since it is difficult to accurately determine the positions of the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light, the above effect can be fully obtained by assuming that any position in the first electrode 101 is a reflective region and any position in the light-emitting layer that can obtain the desired light is a light-emitting region.

[0189] In addition, in the light-emitting device of one embodiment of the present invention, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (transparent electrode, semi-transmitting-semi-reflecting electrode, etc.). In the case where the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In addition, in the case where the electrode is a semi-transmitting-semi-reflecting electrode, the visible light reflectance of the semi-transmitting-semi-reflecting electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0190] In the light-emitting device of one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the reflective electrode has a visible light reflectivity of 40% to 100%, preferably 70% to 100%. In addition, the resistivity of the electrode is preferably 1×10 -2 Ωcm or less.

[0191] <Hole Injection Layer> The hole injection layer (111, 111a, 111b) is a layer for injecting holes from the anode first electrode 101 and the charge generation layer (106, 106a, 106b) into the EL layer (103, 103a, 103b), and contains an organic acceptor material and a material with high hole injection properties.

[0192] The organic acceptor material can generate holes in the organic compound by charge separation with other organic compounds whose HOMO energy level is close to the LUMO energy level. Therefore, compounds having an electron-withdrawing group (halogen or cyano) such as quinone dimethane derivatives, tetrachlorobenzoquinone derivatives, and hexaazatriphenylene derivatives can be used as organic acceptor materials. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylidene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. can be used. Among organic acceptor materials, compounds such as HAT-CN, etc., in which electron-withdrawing groups are bonded to fused aromatic rings having multiple heteroatoms, have high acceptor properties and are thermally stable in film quality, so they are particularly preferred. In addition, [3]radialene derivatives including electron-withdrawing groups (especially halogen groups such as fluorine groups or cyano groups) have very high electron acceptor properties and are therefore preferred. Specifically, α, α', α"-1,2,3-cyclopropane trimethylene tris[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenylacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,3,4,5,6-pentafluorophenylacetonitrile], etc. can be used.

[0193] As materials with high hole injection properties, oxides of metals belonging to Groups 4 to 8 in the periodic table (transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide, etc.) can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide can be cited. Among them, molybdenum oxide is particularly stable in the atmosphere, has low hygroscopicity, and is easy to handle, so it is preferred. In addition to the above, phthalocyanine compounds such as phthalocyanine (abbreviated as: H2Pc) or copper phthalocyanine (CuPc) can be used.

[0194] In addition to the above materials, the following low molecular weight aromatic amine compounds can be used, such as 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviated as TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviated as MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl benzene (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc.

[0195] In addition, a polymer compound (oligomer, dendrimer or polymer, etc.) can be used, such as poly(N-vinyl carbazole) (abbreviated as PVK), poly(4-vinyl triphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), etc. Alternatively, a polymer compound to which an acid is added, such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviated as PEDOT / PSS), polyaniline / polystyrene sulfonic acid (PAni / PSS), etc. can also be used.

[0196] As a material with high hole injection property, a mixed material containing a hole transport material and the above-mentioned organic acceptor material (electron acceptor material) can also be used. In this case, the organic acceptor material extracts electrons from the hole transport material to generate holes in the hole injection layer 111, and the holes are injected into the light-emitting layer 113 through the hole transport layer 112. In addition, the hole injection layer 111 can be a single layer composed of a mixed material containing a hole transport material and an organic acceptor material (electron acceptor material), or a stack of layers formed using a hole transport material and an organic acceptor material (electron acceptor material) respectively.

[0197] As a hole transport material, it is preferable to use a hole transport material having a hole mobility of 1×10 -6 cm 2 / Vs or more. In addition, any substance other than the above may be used as long as it has a higher hole-transporting property than an electron-transporting property.

[0198] As hole transport materials, it is preferred to use materials with high hole transport properties such as compounds having π-electron-rich heteroaromatic rings (e.g., carbazole derivatives, furan derivatives, or thiophene derivatives) and aromatic amines (organic compounds containing aromatic amine skeletons). The organic compounds described in Embodiment 1 are used as hole transport materials because they have hole transport properties.

[0199] Examples of the carbazole derivative (organic compound having a carbazole ring) include bicarbazole derivatives (eg, 3,3′-bicarbazole derivatives) and aromatic amines having a carbazole group.

[0200] Specific examples of the bicarbazole derivatives (e.g., 3,3'-bicarbazole derivatives) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviated as BismBPCz), mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: βNCCP), etc.

[0201] In addition, as the aromatic amine having the above-mentioned carbazole group, specifically, 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-bis(9,9-dimethyl-9H-fluorene-2-yl)amine (abbreviation: PCBiF), BFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren- 4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluorene)-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluorene)-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)-9 , 9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviated as PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviated as PCA2B), N,N',N"-triphenyl-N,N',N"-tri(9-phenylcarbazole-3-yl)benzene-1,3,5-triamine (abbreviated as PCA3B), 9,9-dimethyl N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), : PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviated as: PCzPCN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]spiro-9,9'-difluorene (abbreviation: PCASF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4',4"-tris(carbazole-9-yl)triphenylamine (abbreviation: TCTA), etc.

[0202] Note that as carbazole derivatives, in addition to the above, 9-[4-(9-phenyl-9H-carbazol-3-yl)-phenyl]phenanthrene (abbreviation: PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), etc. can also be mentioned.

[0203] Specific examples of the above-mentioned furan derivatives (organic compounds having a furan ring) include 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0204] Specific examples of the above-mentioned thiophene derivatives (organic compounds having a thiophene ring) include 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), which are organic compounds having a thiophene ring.

[0205] Specific examples of the aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spiro[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), N-(9,9-dimethyl-9H-fluorene)-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), -2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), 2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4"-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: : 1'-TNATA), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviated as: TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviated as: m-MTDATA), N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1, 2-d] furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d] furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d] furan-8-yl)-4"-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d] furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d] furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d] furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4"-diphenyltriphenylamine (abbreviation: BBAβNB) , 4-[4-(2-naphthyl)phenyl]-4',4"-diphenyltriphenylamine (abbreviated as: BBAβNBi), 4,4'-diphenyl-4"-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBAαNβNB), 4,4'-diphenyl-4"-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBAαNβNB-03), 4,4'-diphenyl-4"-(7-phenyl)naphthyl -2-yl triphenylamine (abbreviated as: BBAPβNB-03), 4,4'-diphenyl-4"-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B), 4,4'-diphenyl-4"-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviated as: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviated as: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl-2 ... BAβNαNB), 4,4'-diphenyl-4"-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviated as: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviated as: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: mTPBiAβNBi), 4-, (4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviated as αNBB1BP), 4,4'-diphenyl-4"-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviated as YGTBi1BP), 4'-[4- (3-phenyl-9H-carbazol-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF (4)), N- (Biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluorene- N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-1-amine, etc.

[0206] In addition, as hole transport materials, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4- [(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), etc. Alternatively, a polymer compound to which an acid is added may be used, such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviated as PEDOT / PSS) or polyaniline / polystyrene sulfonic acid (PAni / PSS), etc.

[0207] Note that the hole-transporting material is not limited to the above materials, and a combination of one or more known various materials can be used as the hole-transporting material.

[0208] Note that the hole injection layer (111, 111a, 111b) can be formed by various known deposition methods, for example, by vacuum evaporation.

[0209] <Hole Transport Layer> The hole transport layer (112, 112a, 112b) is a layer that transports holes injected from the hole injection layer (111, 111a, 111b) from the first electrode 101 to the light-emitting layer (113, 113a, 113b). In addition, the hole transport layer (112, 112a, 112b) is a layer containing a hole transport material. Therefore, as the hole transport layer (112, 112a, 112b), a hole transport material that can be used for the hole injection layer (111, 111a, 111b) can be used.

[0210] Note that in the light-emitting device of one embodiment of the present invention, the same organic compound as that of the hole transport layer (112, 112a, 112b) can be used for the light-emitting layer (113, 113a, 113b). When the same organic compound is used for the hole transport layer (112, 112a, 112b) to the light emitting layer (113, 113a, 113b), holes can be efficiently transported from the hole transport layer (112, 112a, 112b) to the light emitting layer (113, 113a, 113b), which is preferred.

[0211] <Luminous Layer> The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. For the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that emit light in blue, purple, blue-purple, green, yellow-green, yellow, orange, red, etc. can be appropriately used. In addition, when a plurality of light-emitting layers are included, by using different light-emitting substances in each light-emitting layer, a structure that emits different light-emitting colors can be obtained (for example, light-emitting colors in a complementary color relationship can be combined to obtain white light). In addition, when a plurality of light-emitting layers are included, each light-emitting layer can also exhibit the same color. When multiple light-emitting layers with the same light-emitting color are stacked, reliability can sometimes be improved compared to a single layer. Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances can also be adopted.

[0212] In addition, the light-emitting layer (113, 113a, 113b) may contain one or more organic compounds (host material, etc.) in addition to the light-emitting substance (guest material).

[0213] Note that when multiple host materials are used in the light-emitting layer (113, 113a, 113b), as the newly added second host material, it is preferred to use a substance having an energy gap larger than the energy gaps of the existing guest material and the first host material. In addition, it is preferred that the lowest singlet excitation energy level (S1 energy level) of the second host material 3 is higher than the S1 energy level of the first host material, and the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the guest material. In addition, it is preferred that the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the first host material. By adopting the above structure, an excimer complex can be formed by two host materials. Note that in order to efficiently form an excimer complex, it is particularly preferred to combine a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material). In addition, by adopting the above structure, high efficiency, low voltage and long life can be achieved at the same time.

[0214] Note that as an organic compound used as the above-mentioned host material (including the first host material and the second host material), as long as the conditions of the host material for the light-emitting layer are met, an organic compound such as a hole transport material that can be used for the above-mentioned hole transport layer (112, 112a, 112b) or an electron transport material that can be used for the electron transport layer (114, 114a, 114b) described later can be used, and an exciplex formed by a plurality of organic compounds (the above-mentioned first host material and the second host material) can also be used. In addition, an exciplex formed by a plurality of organic compounds in an excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small. As a combination of a plurality of organic compounds that form an exciplex, for example, it is preferred that one has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. In addition, as one of the combinations forming an exciplex, a phosphorescent luminescent substance such as an iridium, rhodium or platinum organic metal complex or a metal complex can also be used. Since the organic compound described in Embodiment 1 has a hole-transporting property, it can also be used as a host material.

[0215] There is no particular limitation on the luminescent material that can be used in the luminescent layer (113, 113a, 113b), and a luminescent material that converts singlet excitation energy into light in the visible light region or a luminescent material that converts triplet excitation energy into light in the visible light region can be used.

[0216] <<Luminescent material that converts singlet excitation energy into luminescence>> As the luminescent material that can be used for the luminescent layer (113, 113a, 113b) and converts the singlet excitation energy into luminescence, the following fluorescent emitting materials (fluorescent luminescent materials) can be cited. For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc. can be cited. In particular, pyrene derivatives are preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene- 1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0217] In addition, 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: Y GA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthracenyl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), 4-(10-phenyl triphenylamine (abbreviated as: PCBAPA), 4-[4-(10-phenyl-9-anthracenyl)phenyl]-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBAPBA), perylene, 2,5,8,11-tetra-(tert-butyl) perylene (abbreviated as: TBP), N,N"-(2-tert-butylanthracene-9,10-diyldiphenylamine -4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthracenyl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), etc.

[0218] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: 2DPAPA), DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenylnaphthacene (abbreviated as BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malononitrile (abbreviated as DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile nitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviation: DCJTI ), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviated as BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as BisDCM), [-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviation: BisDCJTM), 1,6BnfAPrn-03, 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0219] <<Luminescent material that converts triplet excitation energy into luminescence>> Next, examples of a light-emitting substance that converts triplet excitation energy into light emission and can be used for the light-emitting layer 113 include a substance that emits phosphorescence (phosphorescent substance) and a thermally activated delayed fluorescence (TADF) material that exhibits thermally activated delayed fluorescence.

[0220] Phosphorescent materials refer to compounds that exhibit phosphorescence but no fluorescence at any temperature in the temperature range (i.e., 77K or more and 313K or less) above low temperature (e.g., 77K or more and 313K or less) below room temperature. The phosphorescent material preferably contains a metal element with a large spin-orbit interaction, and an organic metal complex, a metal complex (platinum complex), a rare earth metal complex, etc. can be used. Specifically, it is preferred to contain a transition metal element, and it is particularly preferred to contain a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt)), and it is particularly preferred to contain iridium. Iridium can increase the probability of direct transition between the singlet ground state and the triplet excited state, so it is preferred.

[0221] <<Phosphorescent substances (450nm and above and 570nm and below: blue or green)>> Examples of phosphorescent substances that emit blue or green light and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following substances.

[0222] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole ]iridium (III) (abbreviated as [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium (III) (abbreviated as [Ir(iPr5btz)3]), etc. having a 4H-triazole ring; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium (III) (abbreviated as [Ir(Mptz1-mp)3]), tris(1-methyl- Organic metal complexes with a 1H-triazole ring, such as tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridine root (phenanthridinato) ]iridium (III) (abbreviated as [Ir(dmpimpt-Me)3]) and other organic metal complexes with an imidazole ring; and bis[2-(4', 6'-difluorophenyl) pyridinium-N, C2']iridium (III) tetra(1-pyrazolyl) borate (abbreviated as FIr6), bis[2-(4', 6'-difluorophenyl) pyridinium-N, C2']iridium (III) picolinate (abbreviated as FIrpic), bis{2-[3', 5'-bis(trifluoromethyl)phenyl]pyridinium-N, C 2’ Iridium(III) picolinate (abbreviated as [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]Organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium (III) acetylacetonate (abbreviation: FIr(acac)).

[0223] <<Phosphorescent substances (495nm or more and 590nm or less: green or yellow)>> Examples of phosphorescent substances that emit green or yellow light and have an emission spectrum with a peak wavelength of 495 nm to 590 nm include the following substances.

[0224] For example, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviated as [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviation: [Ir(nbppm)2 (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(mpmppm)2(acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), (acetylacetonate)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), etc.; (acetylacetonate)bis(3,5-dimethyl-2-phenylpyrazine)iridium (III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]), etc.; tris(2-phenylpyridinium-N,C 2’ )iridium (III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinium-N,C 2’ )iridium(III) acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium(III) acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinoline)iridium(III) (Abbreviation: [Ir(bzq)3]), tris(2-phenylquinoline-N,C 2’ )iridium(III) (abbreviated as [Ir(pq)3]), bis(2-phenylquinoline-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-phenyl-2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridyl-κN)benzofuran[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN 2 )phenyl-κC]iridium (III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridyl-κN]benzofurano[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridyl-κN]phenyl-κC}iridium (III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), Organometallic iridium complexes having a pyridine ring, such as [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mdppy)); bis(2,4-diphenyl-1,3-oxazol-N,C 2’ ) iridium (III) acetylacetonate (abbreviated as [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridine-N,C 2’ Iridium(III) acetylacetonate (abbreviated as [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazole-N,C 2’ ) organic metal complexes such as iridium (III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), and rare earth metal complexes such as tris(acetylacetonate)(monophenanthroline)terbium (III) (abbreviated as [Tb(acac)3(Phen)]).

[0225] <<Phosphorescent substances (570nm and above and 750nm and below: yellow or red)>> Examples of phosphorescent substances that exhibit yellow or red light and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following substances.

[0226] For example, there can be mentioned organic metal complexes having a pyrimidine ring, such as (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviated as [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviated as [Ir(5mdppm)2(dpm)]), and (dipivaloylmethane)bis[4,6-di(naphthalene-1-yl)pyrimidinyl]iridium(III) (abbreviated as [Ir(d1npm)2(dpm)]); (Acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethane)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviated as [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3- (3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedione-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato]-N,C 2’ ]iridium (III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato)-N,C 2’ ]iridium (III) (abbreviated as [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium (III) (abbreviated as [Ir(Fdpq)2(acac)]) and other organic metal complexes having a pyrazine ring; tris(1-phenylisoquinoline-N, C2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinoline-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and bis[4,6-dimethyl-2-(2-quinolin-κN)phenyl-κC](2,4-pentanedionato-κ 2 O,O’)iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]) and other organometallic complexes with pyridine rings; platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]); or rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and tris[1-(2-thienoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0227] <<TADF materials>> In addition, the following materials can be used as TADF materials. TADF materials refer to materials with a small energy difference between the S1 energy level and the T1 energy level (preferably 0.20 eV or less), which can convert the triplet excited state to the singlet excited state (reverse intersystem crossing) using a small amount of thermal energy and efficiently emit luminescence (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is 0.00 eV or more and 0.20 eV or less, preferably 0.00 eV or more and 0.10 eV or less. The delayed fluorescence emitted by TADF materials refers to luminescence with the same spectrum as ordinary fluorescence but a very long lifetime. Its lifetime is 1×10 -6 seconds or more or 1×10 -3 seconds or more.

[0228] In addition, TADF materials can be used as electron-transporting materials, hole-transporting materials, and host materials.

[0229] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as prussicin, eosin, etc. In addition, metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be cited. As metal-containing porphyrins, for example, protoporphyrin-tin fluoride complex (abbreviated as: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviated as: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviated as: SnF2(HematoIX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviated as: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviated as: SnF2(OEP)), protoporphyrin-tin fluoride complex (abbreviated as: SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (abbreviated as: PtCl2OEP) can be mentioned.

[0230] [Chemical formula 31]

[0231] In addition to the above, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H -phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4- (9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofurano[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3 , 3'-biphenyl-9H-carbazole-9-yl)phenyl]benzofurano[3,2-d]pyrimidine (abbreviated as: 4PCCzPBfpm), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-biphenyl-9H-carbazole (abbreviated as: mPCCzPTzn-02), and the like.

[0232] In addition, in the substance in which the π-electron-rich heteroaromatic compound and the π-electron-deficient heteroaromatic compound are directly bonded, the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-deficient heteroaromatic compound are both strong, and the energy difference between the singlet excited state and the triplet excited state becomes small, so it is particularly preferred. In addition, as a TADF material, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium can also be used. This TADF material has a short luminescence lifetime (excitation lifetime), so it can suppress the efficiency reduction in the high brightness area of ​​the light-emitting device.

[0233] [Chemical formula 32]

[0234] In addition to the above, as a material having the function of converting triplet excitation energy into luminescence, a nanostructure of a transition metal compound having a perovskite structure can be cited. Metal halide perovskite nanostructures are particularly preferred. As the nanostructure, nanoparticles and nanorods are preferred.

[0235] In the light-emitting layer (113, 113a, 113b, 113c), as an organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material), one or more substances having a larger energy gap than the light-emitting substance (guest material) can be used.

[0236] <<Fluorescent host material>> When the light-emitting material used for the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting material, as an organic compound (host material) used in combination with the light-emitting material, it is preferred to use an organic compound whose singlet excited state energy level is large and whose triplet excited state energy level is small or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies the above conditions, the hole transport material (described above) and the electron transport material (described later) shown in this embodiment can be used. In addition, the organic compound described in Embodiment 1 can be used.

[0237] Although part of the content is repeated in the above specific examples, from the viewpoint of preferably using in combination with a light-emitting substance (fluorescent light-emitting substance), examples of the organic compound (host material) include anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, (chrysene) derivatives, dibenzo[g,p] Derivatives and other fused polycyclic aromatic compounds.

[0238] Specific examples of organic compounds (host materials) preferably used in combination with fluorescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-( 10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviated as: PCAPBA), N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), 6,12-dimethoxy-5,11-diphenyl N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] -2,7,10,15-tetramine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4-yl]- anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α, β-ADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1 -naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9- (2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-(biphenyl-4-yl)-9-anthryl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 9,9'-bianthracene (abbreviation: BANT), 9,9'- (Diphenylethylene-3,3'-diyl)phenanthrene (abbreviation: DPNS), 9,9'-(diphenylethylene-4,4'-diyl)phenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrene)benzene (abbreviation: TPB3), 5,12-diphenyl tetracene, 5,12-bis(biphenyl-2-yl) tetracene, etc.

[0239] <<Phosphorescent host material>> When the light-emitting material used for the light-emitting layer (113, 113a, 113b, 113c) is a phosphorescent light-emitting material, as an organic compound (host material) used in combination with the light-emitting material, an organic compound whose triplet excitation energy (energy difference between the ground state and the triplet excited state) is greater than the triplet excitation energy of the light-emitting material can be selected. Note that when a plurality of organic compounds (for example, a first host material and a second host material (or an auxiliary material)) are used in combination with a light-emitting material in order to form an exciplex, it is preferable to use these plurality of organic compounds mixed with the phosphorescent light-emitting material. Alternatively, the organic compound described in Embodiment 1 may be used.

[0240] By adopting such a structure, light emission by ExTET (Exciplex-Triplet Energy Transfer) utilizing energy transfer from an exciplex to a luminescent substance can be efficiently obtained. As a combination of multiple organic compounds, a combination that easily forms an exciplex is preferably used, and a combination of a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material) is particularly preferred.

[0241] Although part of the content is repeated in the above specific examples, from the viewpoint of the preferred combination with the light-emitting substance (phosphorescent light-emitting substance), examples of the organic compound (host material, auxiliary material) include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (organic compounds having a dibenzofuran ring), and the like. Organisms (organic compounds having a benzimidazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), furanodiazine derivatives (organic compounds having a furanodiazine ring), zinc and aluminum metal complexes, etc.

[0242] Note that among the above organic compounds, specific examples of aromatic amines and carbazole derivatives as organic compounds having a high hole-transporting property include the same materials as the specific examples of the hole-transporting materials described above, and these materials are preferably used as the host material.

[0243] Specific examples of dibenzothiophene derivatives and dibenzofuran derivatives as organic compounds having high hole transport properties among the above organic compounds include 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, and II, 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as: DBTFLP-IV), 4-[3-(triphenyl-2-yl)phenyl]dibenzothiophene (abbreviated as: mDBTPTp-II), etc. These materials are preferably used as the main materials.

[0244] In addition, preferred host materials include metal complexes having oxazolyl ligands and thiazole ligands, such as bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ).

[0245] In addition, among the above-mentioned organic compounds, specific examples of oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, phenanthroline derivatives, etc. as organic compounds with high electron transport properties include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), Organic compounds containing a heteroaromatic ring having a polyazole ring, such as 2,4-triazole (abbreviation: TAZ), 2,2',2"-(1,3,5-phenyltriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), bathophenanthroline (abbreviation: Bphen), bathocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenylene) -1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-I II), 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 7mDBTPDBq-II) and 6-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviated as: ZADN), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviated as: 2mpPCBPDBq) and other organic compounds containing heteroaromatic rings having dibenzoquinoxaline rings, and these materials are preferably used as the main material.

[0246] Among the above-mentioned organic compounds, specific examples of pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furanodiazine derivatives as organic compounds with high electron transport properties include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3, 5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridine)phenyl]benzene (abbreviated as TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3' -dimethyl)]bis(9H-carbazole) (abbreviated as 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mFBPTzn), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (Abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (Abbreviation: 9mDBtBPNfpr), 9-[(3'-dibenzothiophene-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (Abbreviation: 9pmDBtBPNfpr), 11-[(3'-dibenzothiophene-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (Abbreviation: 11mDBtBPPnfpr), 11-[(3'-dibenzothiophene-4-yl)biphenyl- 4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[(3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviated as 12PCCzPnfpr), 9-[(3'-9-phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmPCBPNfpr), carbazole-9-yl) naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl) naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5] furano[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophene-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophene-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophene-4-yl]biphenyl-3-yl}phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviated as mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)biphenyl-3-yl] ]-4,6-diphenyl-1,3,5-triazine (abbreviated as mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2,6-bis(4-naphthylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 3 -[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1"-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 6-( Organic compounds containing heteroaromatic rings having diazine rings, such as biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), etc., are preferably used as the host material.

[0247] Among the above-mentioned organic compounds, specific examples of metal complexes of organic compounds with high electron transport properties include: zinc or aluminum metal complexes of tris(8-hydroxyquinoline)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinoline)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviation: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviation: Znq); metal complexes having a quinoline ring or a benzoquinoline ring, etc. These materials are preferably used as the main material.

[0248] In addition, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)](abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)](abbreviation: PF-BPy) and other polymer compounds.

[0249] Furthermore, bipolar 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno Organic compounds having a dioxazine ring, such as [2,1-b]carbazole (abbreviation: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12-phenyl-indole[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the main material.

[0250] <Electron Transport Layer> The electron transport layer (114, 114a, 114b) is a layer that transports electrons injected from the second electrode 102 and the charge generation layer (106, 106a, 106b) by the electron injection layer (115, 115a, 115b) described later to the light-emitting layer (113, 113a, 113b). In addition, the light-emitting device of one embodiment of the present invention has a stacked structure, so the heat resistance is improved. In addition, as an electron transport material for the electron transport layer (114, 114a, 114b), it is preferred to use a material having a 1×10 -6 cm 2 / Vs or more. In addition, as long as the electron transport property is higher than the hole transport property, substances other than the above can be used. In addition, the electron transport layer (114, 114a, 114b) works even if it is a single layer, but a stacked structure of more than two layers can also be used. Note that since the above-mentioned mixed material is heat-resistant, by performing a photolithography process on the electron transport layer using the mixed material, the influence of the thermal process on the device characteristics can be suppressed.

[0251] <<Electron Transport Materials>> As an electron transport material that can be used for the electron transport layer (114, 114a, 114b), an organic compound with high electron transport properties can be used, for example, a heteroaromatic compound can be used. Note that a heteroaromatic compound refers to a cyclic compound containing at least two different elements in the ring. Note that as a ring structure, a three-membered ring, a four-membered ring, a five-membered ring, a six-membered ring, etc. are included, and a five-membered ring or a six-membered ring is particularly preferred. As the element contained in the heteroaromatic compound, in addition to carbon, it is preferably one or more of nitrogen, oxygen and sulfur. Particularly preferred is a heteroaromatic compound containing nitrogen (nitrogen-containing heteroaromatic compound), and it is preferred to use a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the nitrogen-containing heteroaromatic compound. High electron transport materials (electron transport materials) such as π-electron-deficient heteroaromatic compounds are preferably used.

[0252] Note that the electron transport material may use a material different from the material used for the light-emitting layer. Not all excitons generated by the recombination of carriers in the light-emitting layer may contribute to luminescence, and sometimes diffuse to the layer in contact with or near the light-emitting layer. In order to avoid this phenomenon, the energy level (lowest singlet excitation level or lowest triplet excitation level) of the material used for the layer in contact with or near the light-emitting layer is preferably higher than that of the material used for the light-emitting layer. Thus, when a material different from the material used for the light-emitting layer is used for the electron transport material, a highly efficient device can be obtained.

[0253] Heteroaromatic compounds are organic compounds having at least one heteroaromatic ring.

[0254] Note that the heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, a thiazole ring, etc. Further, the heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, or a pyridazine ring, etc. Further, the heteroaromatic ring having a polyazole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, or an oxadiazole ring.

[0255] The heteroaromatic ring includes a condensed heteroaromatic ring having a condensed ring structure. Note that examples of the condensed heteroaromatic ring include a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a furadiazine ring, and a benzimidazole ring.

[0256] Note that, for example, among heteroaromatic compounds containing one or more of nitrogen, oxygen, sulfur, etc. in addition to carbon, as heteroaromatic compounds having a five-membered ring structure, there can be mentioned heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, heteroaromatic compounds having a benzimidazole ring, and the like.

[0257] For example, among heteroaromatic compounds containing one or more of nitrogen, oxygen, sulfur, etc. in addition to carbon, as heteroaromatic compounds having a six-membered ring structure, there can be mentioned heteroaromatic compounds having heteroaromatic rings such as pyridine rings, diazine rings (including pyrimidine rings, pyrazine rings, pyridazine rings, etc.), triazine rings, and polyazole rings. Note that heteroaromatic compounds having a bipyridine structure, heteroaromatic compounds having a terpyridine structure, etc. can be mentioned, and they are included in the examples of heteroaromatic compounds connected to a pyridine ring.

[0258] Furthermore, examples of heteroaromatic compounds having a fused ring structure in which a portion of the six-membered ring structure is included include heteroaromatic compounds having fused heteroaromatic rings such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a furanodiazine ring (including a structure in which a furan ring of a furanodiazine ring is fused with an aromatic ring), and a benzimidazole ring.

[0259] Specific examples of heteroaromatic compounds having the above-mentioned five-membered ring structure (polyazole ring (including imidazole ring, triazole ring, oxadiazole ring), oxazole ring, thiazole ring, benzimidazole ring, etc.) include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenyl)-4-phenyl -5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (abbreviated as: p-EtTAZ), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviated as: BzO S )wait.

[0260] Specific examples of heteroaromatic compounds having the above-mentioned six-membered ring structure (including heteroaromatic rings having pyridine rings, diazine rings, triazine rings, etc.) include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like; 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl 1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviated as mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)biphenyl-3- yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2,6-bis(4-naphthylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9- Heteroaromatic compounds containing a heteroaromatic ring having a triazine ring, such as phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1"-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), and mFBPTzn;4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9 -yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP- 4mDBtPBfpm, 9mDBtBPNfpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofurano[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviated as 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine heteroaromatic compounds containing heteroaromatic rings having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthyl)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), and the like. Note that the aromatic compounds containing the above heteroaromatic rings include heteroaromatic compounds having condensed heteroaromatic rings. ;

[0261] In addition, 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl Heteroaromatic compounds containing heteroaromatic rings having diazine (pyrimidine) rings, such as pyrimidine (abbreviation: 6mBP-4Cz2PPm); heteroaromatic compounds containing heteroaromatic rings having triazine rings, such as 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridinyl)-1,3,5-triazine (abbreviation: 2Py3Tz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), etc.

[0262] Specific examples of the heteroaromatic compound having a fused ring structure in which a part of the heteroaromatic compound has a six-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: Bphen), bathocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline] (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(di ... heteroaromatic compounds having a quinoxaline ring, such as 2-[3-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), and 2mpPCBPDBq.

[0263] In addition to the above-mentioned heteroaromatic compounds, the following metal complexes can be used for the electron transport layer (114, 114a, 114b). Examples of the metal complexes include tris(8-hydroxyquinoline)aluminum(III) (abbreviated as Alq3), Almq3, 8-hydroxyquinoline lithium (abbreviated as Liq), BeBq2, bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviated as BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviated as Znq), and metal complexes having a quinoline ring or a benzoquinoline ring, and bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO), bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ), and the like.

[0264] In addition, as electron transport materials, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used.

[0265] In addition, the electron transport layer (114, 114a, 114b) may be a single layer or a stack of two or more layers containing the above-mentioned substances.

[0266] <Electron Injection Layer> The electron injection layer (115, 115a, 115b) is a layer containing a substance with high electron injection property. The electron injection layer (115, 115a, 115b) is a layer used to improve the efficiency of injecting electrons from the second electrode 102. It is preferred to use a material with a small difference (less than 0.50 eV) between the work function value of the material used for the second electrode 102 and the LUMO energy level value of the material used for the electron injection layer (115, 115a, 115b). Therefore, as the electron injection layer 115, lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-hydroxyquinoline-lithium (abbreviated as: Liq), 2-(2-pyridyl) phenol lithium (abbreviated as: LiPP), 2-(2-pyridyl)-3-hydroxypyridine (pyridinolato) lithium (abbreviated as: LiPPy), 4-phenyl-2-(2-pyridyl) phenol lithium (abbreviated as: LiPPP), lithium oxide (LiO x), alkali metals such as cesium carbonate, alkaline earth metals or their compounds. In addition, rare earth metals such as erbium fluoride (ErF3) and ytterbium (Yb) can be used. In addition, compounds having a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton, such as 1-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF), 1,1'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2,7hpp2SF), and 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py), can also be used. Note that the electron injection layer (115, 115a, 115b) may be formed by mixing multiple materials mentioned above or by stacking multiple materials mentioned above. In addition, an electron compound may be used for the electron injection layer (115, 115a, 115b). As an example of the electron compound, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration may be cited. In addition, the substance constituting the electron transport layer (114, 114a, 114b) as described above may also be used.

[0267] In addition, a mixed material formed by mixing an organic compound with an electron donor (donor) can also be used for the electron injection layer (115, 115a, 115b). This mixed material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent performance in transporting the generated electrons. Specifically, for example, an electron transport material (metal complex and heteroaromatic compound, etc.) used for the electron transport layer (114, 114a, 114b) as described above can be used. As an electron donor, any substance that exhibits electron donating properties to organic compounds can be used. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferably used, and lithium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be mentioned. In addition, alkali metal oxides and alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be mentioned. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as: TTF) can also be used. Alternatively, multiple of these materials can be stacked and used.

[0268] In addition, a mixed material of an organic compound and a metal may be used for the electron injection layer (115, 115a, 115b). Note that the organic compound used here preferably has a LUMO level of -3.60 eV or more and -2.30 eV or less. In addition, a material having a non-shared electron pair is preferably used.

[0269] Therefore, as an organic compound for the above-mentioned mixed material, a mixed material formed by mixing the above-mentioned heteroaromatic compounds and metals that can be used for the electron transport layer can also be used. The heteroaromatic compound is preferably a heteroaromatic compound having a five-membered ring structure (imidazole ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, benzimidazole ring, etc.), a heteroaromatic compound having a six-membered ring structure (pyridine ring, diazine ring (including pyrimidine ring, pyrazine ring, pyridazine ring, etc.), a triazine ring, a bipyridine ring, a terpyridine ring, etc.), a heteroaromatic compound having a condensed ring structure (quinoline ring, benzoquinoline ring, quinoxaline ring, dibenzoquinoxaline ring, phenanthroline ring, etc.) having a six-membered ring structure, and the like. Materials with non-shared electron pairs. The specific materials have been described above, so their description is omitted here.

[0270] As the metal used for the mixed material, it is preferred to use transition metals belonging to Group 5, Group 7, Group 9 or Group 11 in the periodic table and materials belonging to Group 13, for example, Ag, Cu, Al or In. In addition, at this time, a single occupied orbital (SOMO) is formed between the organic compound and the transition metal.

[0271] In addition, for example, in the case of amplifying the light obtained from the light-emitting layer 113b, it is preferable to form the second electrode 102 and the light-emitting layer 113b in such a manner that the optical distance between the second electrode 102 and the light-emitting layer 113b is less than 1 / 4 of the wavelength λ of the light presented by the light-emitting layer 113b. In this case, the optical distance can be adjusted by changing the thickness of the electron transport layer 114b or the electron injection layer 115b.

[0272] In addition, if Figure 1E By providing the charge generation layer 106 between two EL layers (103a, 103b) as in the light-emitting device shown in the figure, a structure (also referred to as a tandem structure) in which a plurality of EL layers are stacked between a pair of electrodes can be provided.

[0273] <Charge Generation Layer> The charge generation layer 106 has the following function: when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode), electrons are injected into the EL layer 103a and holes are injected into the EL layer 103b. The charge generation layer 106 can have a structure in which an electron acceptor (acceptor) is added to a hole transport material (also called a P-type layer), and can also have a structure in which an electron donor (donor) is added to an electron transport material (also called an electron injection buffer layer). Alternatively, these two structures can be stacked. Furthermore, an electron relay layer can be provided between the P-type layer and the electron injection buffer layer. Note that by using the above-mentioned materials to form the charge generation layer 106, the increase in driving voltage caused by stacking EL layers can be suppressed.

[0274] In the case where the charge generation layer 106 has a structure in which an electron acceptor is added to a hole transport material of an organic compound (P-type layer), the material shown in this embodiment can be used as a hole transport material. In addition, as an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as: F4-TCNQ), chloranil, etc. can be cited. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be cited. In addition, the above-mentioned acceptor materials can also be used. In addition, a mixed film in which the materials constituting the P-type layer are mixed can be used, or a single film containing each material can be stacked.

[0275] In the case where the charge generation layer 106 has a structure in which an electron donor is added to an electron transport material (electron injection buffer layer), the material shown in this embodiment can be used as an electron transport material. In addition, as an electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc. are preferably used. In addition, compounds of alkali metals such as Liq can also be used. In addition, organic compounds such as tetrathianaphthacene can also be used as electron donors. In addition, organic compounds having a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton such as 2hppSF, 2,7hpp2SF, hpp2Py can also be used as electron donors. When these organic compounds are used as electron donors, when organic compounds containing heteroaromatic rings having phenanthroline rings such as bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) are used as combined electron transport materials, the driving voltage of the light-emitting device can be reduced, so it is preferred.

[0276] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least a substance having electron transport properties, and has the function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO energy level of the substance having electron transport properties contained in the electron relay layer is preferably located between the LUMO energy level of the acceptor substance in the P-type layer and the LUMO energy level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific value of the LUMO energy level of the substance having electron transport properties in the electron relay layer is preferably above -5.00 eV, more preferably above -5.00 eV and below -3.00 eV. In addition, as the substance having electron transport properties in the electron relay layer, it is preferred to use a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0277] In terms of light extraction efficiency, the charge generation layer 106 preferably has a light transmittance to visible light (specifically, the charge generation layer 106 has a visible light transmittance of 40% or more). The charge generation layer 106 can function even if its conductivity is lower than that of the first electrode 101 and the second electrode 102 .

[0278] Although Figure 1E Although a structure in which two EL layers 103 are stacked is shown, a structure in which three or more layers are stacked can be formed by providing a charge generating layer between different EL layers.

[0279] <Cap layer> Note that although Figures 1A to 1E Although not shown in the figure, a cap layer may be provided on the second electrode 102 of the light emitting device. For example, a material with a high refractive index may be used for the cap layer. By providing the cap layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 may be improved.

[0280] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviated as BisBTc), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), and the like.

[0281] <Substrate> The light-emitting device shown in this embodiment can be formed on various substrates. Note that there is no particular limitation on the type of substrate. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate including a stainless steel foil, a tungsten substrate, a substrate including a tungsten foil, a flexible substrate, a laminated film, a paper including a fibrous material, or a substrate film.

[0282] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic vapor-deposited films, and paper.

[0283] In addition, when manufacturing the light-emitting device shown in this embodiment, a vapor phase method such as evaporation, a liquid phase method such as spin coating and inkjet can be used. As an evaporation method, a physical evaporation method (PVD method) or a chemical vapor deposition method (CVD method) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, and vacuum evaporation can be used. In particular, a layer having various functions (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) included in the EL layer of the light-emitting device can be formed by a evaporation method (vacuum evaporation method), a coating method (dip coating, dye coating, rod coating, spin coating, spray coating, etc.), a printing method (inkjet method, screen printing (porcelain printing) method, offset printing (lithography) method, flexographic printing (relief printing) method, gravure printing, microcontact printing, etc.) and the like.

[0284] Note that when using the above-mentioned deposition method such as the coating method and the printing method, high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds (compounds between low molecular weight and high molecular weight): molecular weight is greater than 400 and less than 4000), inorganic compounds (quantum dot materials, etc.), etc. can be used. Note that as quantum dot materials, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell (Core Shell) type quantum dot materials, core-type quantum dot materials, etc. can be used.

[0285] The materials of each layer (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) constituting the EL layer 103 of the light-emitting device shown in this embodiment are not limited to the materials shown in this embodiment, and any material that can satisfy the functions of each layer can be used in combination.

[0286] In this specification and the like, "layer" and "film" can be interchanged.

[0287] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0288] (Implementation 4) In this embodiment, a specific configuration example and an example of a manufacturing method of a light receiving and emitting device which is one embodiment of the present invention are described.

[0289] <Configuration Example of Light Receiving and Light Emitting Device 700> Figure 5A The light-emitting device 700 shown includes a light-emitting device 550B, a light-emitting device 550G, a light-emitting device 550R, and a light-receiving device 550PS formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes not only a driving circuit such as a gate driver and a source driver composed of a plurality of transistors, but also wiring that electrically connects them. As an example, these driving circuits are electrically connected to the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS, respectively, and can drive these devices. In addition, the light-emitting device 700 includes an insulating layer 705 on the functional layer 520 and each device (light-emitting device and light-receiving device), and the insulating layer 705 has the function of bonding the second substrate 770 and the functional layer 520.

[0290] The light-emitting device 550B, the light-emitting device 550G, and the light-emitting device 550R have the device structure described in Embodiment 1. Figure 1A ) has a structure that is different between light-emitting devices. For example, the light-emitting layer 105B included in the EL layer 103B can emit blue light, the light-emitting layer 105G included in the EL layer 103G can emit green light, and the light-emitting layer 105R included in the EL layer 103G can emit red light.

[0291] Note that this embodiment shows a case where each device (a plurality of light-emitting devices and a light-receiving device) is formed separately, but in the manufacturing process, part of the EL layer (hole injection layer, hole transport layer, and electron transport layer) of the light-emitting device and part of the active layer (hole injection layer, hole transport layer, and electron transport layer) of the light-receiving device may be formed simultaneously using the same material. This will be described in detail in Embodiment 8.

[0292] In this specification, etc., a structure in which the light-emitting layer of each color light-emitting device (e.g., blue (B), green (G), and red (R)) and the light-receiving layer of the light-receiving device are formed or coated separately is sometimes referred to as an SBS (Side By Side) structure. Figure 5A In the light receiving and emitting device 700 shown, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the light receiving device 550PS are arranged in this order, but one embodiment of the present invention is not limited to this structure. For example, in the light receiving and emitting device 700, the above devices may also be arranged in the order of the light emitting device 550R, the light emitting device 550G, the light emitting device 550B, and the light receiving device 550PS.

[0293] exist Figure 5A In the embodiment, the light-emitting device 550B includes an electrode 551B, an electrode 552, and an EL layer 103B sandwiched between the electrode 551B and the electrode 552. In addition, the light-emitting device 550G includes an electrode 551G, an electrode 552, and an EL layer 103G sandwiched between the electrode 551G and the electrode 552. In addition, the light-emitting device 550R includes an electrode 551R, an electrode 552, and an EL layer 103R sandwiched between the electrode 551R and the electrode 552. In addition, the EL layer (103B, 103G, 103R) has a stacked structure composed of a plurality of layers having different functions including the light-emitting layer (105B, 105G, 105R). The specific structure of each layer of the light-emitting device is shown in Embodiments 1 to 3.

[0294] In addition, Figure 5A In the embodiment, the light receiving device 550PS includes an electrode 551PS, an electrode 552, and a light receiving layer 103PS sandwiched between the electrode 551PS and the electrode 552. The light receiving layer 103PS has a stacked structure composed of a plurality of layers having different functions including an active layer 105PS. The specific structure of the light receiving device is shown in Embodiment 8.

[0295] Figure 5A The following cases are shown: the EL layer 103B includes a hole injection / transport layer 104B, a light-emitting layer 105B, an electron transport layer 108B, and an electron injection layer 109; the EL layer 103G includes a hole injection / transport layer 104G, a light-emitting layer 105G, an electron transport layer 108G, and an electron injection layer 109; the EL layer 103R includes a hole injection / transport layer 104R, a light-emitting layer 105R, an electron transport layer 108R, and an electron injection layer 109; and the light-receiving layer 103PS includes a hole injection / transport layer 104PS, an active layer 105PS, an electron transport layer 108PS, and an electron injection layer 109. However, the present invention is not limited to this.

[0296] In addition, the electron transport layer (108B, 108G, 108R) may also have a function of inhibiting the transfer of holes from the anode side to the cathode side through the light-emitting layer (103B, 103G, 103R). In addition, the electron injection layer 109 may also have a stacked structure in which part or all of it is made of different materials.

[0297] In addition, if Figure 5AAs shown, an insulating layer 107 is formed on the side (or end) of the hole injection / transport layer (104B, 104G, 104R), the light emitting layer (105B, 105G, 105R) and the electron transport layer (108B, 108G, 108R) in the layers of the EL layer (103B, 103G, 103R) and the side (or end) of the hole injection / transport layer 104PS, the active layer 105PS and the electron transport layer 108PS in the layers of the light receiving layer 103PS. The insulating layer 107 is in contact with the side (or end) of the EL layer (103B, 103G, 103R) and the light receiving layer 103PS. Thus, oxygen, moisture or its constituent elements can be suppressed from entering the inside from the side of the EL layer (103B, 103G, 103R) and the light receiving layer 103PS. In addition, the insulating layer 107 can use aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride or silicon oxynitride, etc. In addition, the insulating layer 107 can also be formed by stacking the above materials. In addition, the insulating layer 107 can be formed by sputtering, CVD, MBE, PLD, ALD, etc., and preferably by using the ALD method with good coverage. In addition, the insulating layer 107 continuously covers a part of the EL layer (103B, 103G, 103R) of the adjacent light-emitting device or a part of the side (or end) of the light-receiving layer 103PS of the light-receiving device. For example, in Figure 5A In the embodiment, a part of the EL layer 103G of the light-emitting device 550B and a part of the side surface of the EL layer 103G of the light-emitting device 550G are covered with the insulating layer 107. In addition, it is preferable to form a Figure 5A The partition wall 528 shown is made of an insulating material.

[0298] exist Figure 5A In the embodiment, the electron injection layer 109 and the electrode 552 are common layers (common layers) between the devices (550B, 550G, 550R, 550PS). In addition, the electron injection layer 109 may have a stacked structure of two or more layers (for example, layers with different stacked resistances, etc.).

[0299] Partition walls 528 are provided between a portion of the electrodes (551B, 551G, 551R, 551PS) and the EL layer (103B, 103G, 103R) and a portion of the light receiving layer 103PS. Figure 5A As shown, the side surfaces (or ends) of the electrodes (551B, 551G, 551R, 551PS) of each device, a portion of the EL layer (103B, 103G, 103R), and a portion of the light-receiving layer 103PS are in contact with the partition wall 528 via the insulating layer 107.

[0300] In each EL layer and light-receiving layer, in particular, the hole injection layer included in the hole transport region located between the anode and the light-emitting layer and between the anode and the active layer has a high conductivity in many cases, and thus, if it is formed as a layer used in common between adjacent devices, this sometimes causes crosstalk. Therefore, as in this structural example, by providing a partition wall 528 formed of an insulating material between each EL layer and the light-receiving layer, crosstalk between adjacent devices (between a light-receiving device and a light-emitting device, between a light-emitting device and a light-emitting device, or between a light-receiving device and a light-receiving device) can be suppressed.

[0301] In the manufacturing method described in this embodiment, the side surfaces (or ends) of the EL layer and the light-receiving layer are exposed during the process due to the patterning process. Therefore, oxygen, water, etc. enter from the side surfaces (or ends) of the EL layer and the light-receiving layer, making it easy for the EL layer and the light-receiving layer to deteriorate. Therefore, by providing the partition wall 528, the degradation of the EL layer and the light-receiving layer during the manufacturing process can be suppressed.

[0302] By setting the partition wall 528, the recessed portion formed between adjacent devices (between the light receiving device and the light emitting device, between the light emitting device and the light emitting device, or between the light receiving device and the light receiving device) can also be flattened. In addition, by flattening the recessed portion, the disconnection of the electrode 552 formed on each EL layer and the light receiving layer can be suppressed. In addition, as an insulating material for forming the partition wall 528, for example, organic materials such as acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin and precursors of these resins can be used. In addition, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose or polyamide resin soluble in alcohol can also be used. In addition, photosensitive resins such as photoresists can be used. Note that the photosensitive resin can use positive materials or negative materials.

[0303] By using a photosensitive resin, the partition wall 528 can be manufactured only by the process of exposure and development. In addition, the partition wall 528 can also be formed using a negative photosensitive resin (such as a resist material, etc.). In addition, when an insulating layer containing an organic material is used as the partition wall 528, it is preferable to use a material that absorbs visible light. By using a material that absorbs visible light for the partition wall 528, the light emitted from the EL layer can be absorbed by the partition wall 528, thereby suppressing the light (stray light) that may leak to the adjacent EL layer and the light-receiving layer. Therefore, a display panel with high display quality can be provided.

[0304] The difference between the height of the top surface of the partition wall 528 and the height of the top surface of any layer of the EL layer (103B, 103G, 103R) and the light-receiving layer 103PS is, for example, preferably 0.5 times or less, and more preferably 0.3 times or less, the thickness of the partition wall 528. For example, the partition wall 528 may be provided so that the top surface of any layer of the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS is higher than the top surface of the partition wall 528. For example, the partition wall 528 may be provided so that the top surface of the partition wall 528 is higher than the top surfaces of the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS.

[0305] In a high-definition light-receiving and light-emitting device (display panel) exceeding 1000 ppi, crosstalk occurs when electrical conduction occurs between the EL layer 103B, the EL layer 103G, the EL layer 103R, and the light-receiving layer 103PS, so that the color gamut that can be displayed by the light-receiving and light-emitting device becomes narrower. By providing the partition wall 528 in a high-definition display panel exceeding 1000 ppi, preferably a high-definition display panel exceeding 2000 ppi, and more preferably an ultra-high-definition display panel exceeding 5000 ppi, a display panel capable of displaying vivid colors can be provided.

[0306] Figure 5B and Figure 5C is corresponding to Figure 5A The schematic top view of the light-emitting device 700 along the dotted line Ya-Yb in the cross-sectional view of FIG. That is, each light-emitting device (550B, 550G and 550R) is arranged in a matrix. Note that Figure 5B The so-called stripe arrangement in which light emitting devices of the same color are arranged in the X direction is shown. Figure 5C The structure in which light emitting devices of the same color are arranged in the X direction and patterned for each pixel is shown. Note that the arrangement method of the light emitting devices is not limited to this, and other arrangements such as Delta arrangement, Zigzag arrangement, Pentile arrangement, Diamond arrangement, etc. may be used.

[0307] Note that since patterning is performed by photolithography in the separation process of each EL layer (103B, 103G, 103R) and the light-receiving layer 103PS, a high-definition light-receiving and light-emitting device can be manufactured. (Display panel). In addition, the end (side) of the EL layer processed by patterning by photolithography has a shape including substantially the same surface (or located on substantially the same plane). In this case, the width (SE) of the gap 580 provided between each EL layer and the light-receiving layer is preferably 5 μm or less, more preferably 1 μm or less.

[0308] In the EL layer, in particular, the hole injection layer included in the hole transport region located between the anode and the light-emitting layer has a high conductivity in many cases, and therefore, if it is formed as a layer used in common between adjacent light-emitting devices, this may cause crosstalk. Therefore, as in this structural example, by performing patterning using photolithography to separate the EL layer, the occurrence of crosstalk between adjacent light-emitting devices can be suppressed.

[0309] Figure 5D is corresponding to Figure 5B and Figure 5C Schematic cross-sectional view of the dot-dash line C1-C2 in FIG. Figure 5D The connecting portion 130 is shown in which the connecting electrode 551C is electrically connected to the electrode 552. In the connecting portion 130, the electrode 552 is provided on the connecting electrode 551C so as to be in contact therewith. In addition, the partition wall 528 is provided so as to cover the end of the connecting electrode 551C.

[0310] <Example of a method for manufacturing a light-receiving and light-emitting device> like Fig. 6A As shown in FIG. 5 , an electrode 551B, an electrode 551G, an electrode 551R, and an electrode 551PS are formed. For example, a conductive film is formed on the functional layer 520 formed on the first substrate 510, and the conductive film is processed into a predetermined shape by photolithography.

[0311] Note that the conductive film can be formed by sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, molecular beam epitaxy (MBE: Molecular Beam Epitaxy) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. As a CVD method, a plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method or a thermal CVD method can be cited. In addition, as one of the thermal CVD methods, an organic metal chemical vapor deposition (MOCVD: Metal OrganicCVD) method can be cited.

[0312] When processing the conductive film, in addition to the above-mentioned photolithography, the thin film can also be processed by nanoimprinting, sandblasting, lift-off, etc. In addition, an island-shaped thin film can be directly formed by a deposition method using a shadow mask such as a metal mask.

[0313] There are two typical methods of photolithography. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask. The other is a method of depositing a photosensitive thin film and then exposing and developing the thin film to a desired shape. Note that when using the former method, there are heat treatment steps such as heating after resist coating (PAB: Pre Applied Bake) and heating after exposure (PEB: Post Exposure Bake). In one embodiment of the present invention, photolithography is used in the processing of a thin film (a film formed of an organic compound or a film in which a portion thereof contains an organic compound) used to form an EL layer in addition to the processing of a conductive film.

[0314] In the photolithography method, as the light used for exposure, for example, i-line (wavelength 365nm), g-line (wavelength 436nm), h-line (wavelength 405nm) or light mixed with these rays can be used. In addition, ultraviolet light, KrF laser or ArF laser, etc. can also be used. In addition, liquid immersion exposure technology can also be used for exposure. In addition, as the light used for exposure, extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays can also be used. In addition, an electron beam can also be used instead of the light used for exposure. When extreme ultraviolet light, X-rays or electron beams are used, extremely fine processing can be performed, so it is preferred. Note that when exposure is performed by scanning with a light beam such as an electron beam, a photomask is not required.

[0315] As thin film etching using a resist mask, dry etching, wet etching, sand blasting, or the like can be used.

[0316] Then, if Figure 6B As shown, a hole injection / transport layer 104B, a light-emitting layer 105B, and an electron transport layer 108B are formed on the electrode 551B, the electrode 551G, the electrode 551R, and the electrode 551PS. For example, the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B can be formed by vacuum evaporation. Furthermore, a sacrificial layer 110B is formed on the electron transport layer 108B. When forming the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B, the materials described in Embodiments 1 to 3 can be used.

[0317] The sacrificial layer 110B preferably uses a film with high resistance to etching treatment of the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B, that is, a film with a relatively large etching selectivity. In addition, the sacrificial layer 110B preferably adopts a stacked structure of a first sacrificial layer and a second sacrificial layer having different etching selectivities. In addition, the sacrificial layer 110B can use a film that can be removed by a wet etching method that causes less damage to the EL layer 103B. Oxalic acid or the like can be used as an etching material for wet etching. Note that in this specification, etc., the sacrificial layer may also be referred to as a mask layer.

[0318] The sacrificial layer 110B may be an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film. The sacrificial layer 110B may be formed by various deposition methods such as sputtering, vapor deposition, CVD, or ALD.

[0319] As the sacrificial layer 110B, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing the metal materials can be used. In particular, low melting point materials such as aluminum and silver are preferably used.

[0320] In addition, as the sacrificial layer 110B, a metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) can be used. In addition, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0321] Note that an element M (M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium) may be used instead of the above gallium. In particular, M is preferably one or more selected from gallium, aluminum and yttrium.

[0322] Alternatively, an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide may be used as the sacrificial layer 110B.

[0323] As the sacrificial layer 110B, it is preferred to use a material that is soluble in the following solvent, that is, a solvent that is chemically stable at least to the electron transport layer 108B located at the top. In particular, a material that is soluble in water or alcohol can be appropriately used as the sacrificial layer 110B. When depositing the sacrificial layer 110B, it is preferred that the material is applied by a wet deposition method in a state dissolved in a solvent such as water or alcohol, and then a heating treatment is performed to evaporate the solvent. At this time, by performing a heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature and in a short time, so the thermal damage to the hole injection / transport layer 104B, the light-emitting layer 105B and the electron transport layer 108B can be reduced, so it is preferred.

[0324] Note that when a stacked-layer structure is adopted as the sacrificial layer 110B, a layer formed of the above-mentioned material may be used as a first sacrificial layer, and a second sacrificial layer may be formed thereunder to form a stacked-layer structure.

[0325] At this time, the second sacrificial layer is a film used as a hard mask when etching the first sacrificial layer. In addition, the first sacrificial layer is exposed when processing the second sacrificial layer. Therefore, as the first sacrificial layer and the second sacrificial layer, a combination of films with a relatively large etching selectivity is selected. Therefore, a film that can be used for the second sacrificial layer can be selected according to the etching conditions of the first sacrificial layer and the etching conditions of the second sacrificial layer.

[0326] For example, when dry etching using a gas containing fluorine (also referred to as a fluorine-based gas) is used as the etching of the second sacrificial layer, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, or an alloy containing molybdenum and tungsten can be used for the second sacrificial layer. Here, as a film having a relatively large etching selectivity (i.e., a slow etching rate) for the above-mentioned dry etching using a fluorine-based gas, there are metal oxide films such as IGZO and ITO, and the above-mentioned films can be used for the first sacrificial layer.

[0327] In addition, the second sacrificial layer is not limited thereto, and can be selected from various materials according to the etching conditions of the first sacrificial layer and the etching conditions of the second sacrificial layer. For example, it can also be selected from the films that can be used for the first sacrificial layer.

[0328] In addition, as the second sacrificial layer, for example, a nitride film can be used, and specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can be used.

[0329] Alternatively, an oxide film may be used as the second sacrificial layer. Typically, an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride may be used.

[0330] Then, if Figure 6CAs shown, a resist is applied on the sacrificial layer 110B, and the resist is formed into a desired shape (resist mask: REG) by photolithography. In addition, when this method is adopted, there are heat treatment processes such as heating after resist coating (PAB: PreApplied Bake) and heating after exposure (PEB: Post Exposure Bake). For example, the PAB temperature is about 100°C and the PEB temperature is about 120°C. Therefore, the light-emitting device needs to be able to withstand these processing temperatures.

[0331] Next, a portion of the sacrificial layer 110B not covered by the resist mask REG is etched away using the obtained resist mask REG, the resist mask REG is removed, and then the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B not covered by the sacrificial layer are removed by etching, and the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B are processed into a shape having a side (or exposed side) on the electrode 551B or a strip shape extending in a direction intersecting the page. As an etching method, dry etching is preferably used. In the case where the sacrificial layer 110B has a stacked structure of the above-mentioned first sacrificial layer and the above-mentioned second sacrificial layer, the resist mask REG can also be removed after etching a portion of the second sacrificial layer using the resist mask REG, and the second sacrificial layer is used as a mask to etch a portion of the first sacrificial layer to process the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B into a specified shape. By performing these etching processes, Fig. 7A shape.

[0332] Then, if Figure 7B As shown, a hole injection / transport layer 104G, a light-emitting layer 105G, and an electron transport layer 108G are formed on the sacrificial layer 110B, the electrode 551G, the electrode 551R, and the electrode 551PS. When forming the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G, the materials described in Embodiments 1 to 3 can be used. In addition, for example, the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G can be formed using a vacuum evaporation method.

[0333] Then, if Figure 7CAs shown, a sacrificial layer 110G is formed on the electron transport layer 108G, and then a resist is applied on the sacrificial layer 110G, and the resist is formed into a desired shape (resist mask: REG) by photolithography, and a portion of the sacrificial layer 110G not covered by the obtained resist mask is removed by etching, and the resist mask is removed, and then the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G not covered by the sacrificial layer are removed by etching, and the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G are processed into a shape having a side surface (or exposing a side surface) on the electrode 551G or a strip shape extending in a direction intersecting the page. As an etching method, dry etching is preferably used. As the sacrificial layer 110G, the same material as that of the sacrificial layer 110B can be used. In the case where the sacrificial layer 110G has the stacked structure of the first sacrificial layer and the second sacrificial layer, the second sacrificial layer can be etched with a resist mask and then the resist mask can be removed. The second sacrificial layer can be used as a mask to etch a portion of the first sacrificial layer to process the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G into a predetermined shape. By performing these etching processes, Fig. 8A shape.

[0334] Then, if Figure 8B As shown, a hole injection / transport layer 104R, a light-emitting layer 105R, and an electron transport layer 108R are formed on the sacrificial layer 110B, the sacrificial layer 110G, the electrode 551R, and the electrode 551PS. When forming the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R, the materials described in Embodiments 1 to 3 can be used. In addition, for example, the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R can be formed using a vacuum evaporation method.

[0335] Then, if Figure 8CAs shown, a sacrificial layer 110R is formed on the electron transport layer 108R, and then a resist is applied on the sacrificial layer 110R, and the resist is formed into a desired shape (resist mask: REG) by photolithography. Next, the sacrificial layer 110R not covered by the obtained resist mask is removed by etching, and the resist mask is removed. Then, the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R not covered by the sacrificial layer are removed by etching, and the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R are processed into a shape having a side surface (or an exposed side surface) on the electrode 551R or a strip shape extending in a direction intersecting the page. As an etching method, dry etching is preferably used. As the sacrificial layer 110R, the same material as that of the sacrificial layer 110B can be used. In the case where the sacrificial layer 110R has the stacked structure of the first sacrificial layer and the second sacrificial layer, the second sacrificial layer can be partially etched using a resist mask and then the resist mask can be removed. The second sacrificial layer can be used as a mask to etch a portion of the first sacrificial layer to process the hole injection / transport layer 104R, the light emitting layer 105R, and the electron transport layer 108R into a predetermined shape. By performing these etching processes, Fig.9A shape.

[0336] Then, if Fig. 9B As shown, a hole injection / transport layer 104PS, an active layer 105PS, and an electron transport layer 108PS are formed on the sacrificial layer 110B, the sacrificial layer 110G, the sacrificial layer 110R, and the electrode 551PS. When the hole injection / transport layer 104PS is formed, as a material, for example, the materials described as the hole injection layer and the hole transport layer in Embodiment Modes to 3 can be used. In addition, in the active layer 105PS, as a material, the material to be described in Embodiment Mode 8 can be used. When the electron transport layer 108PS is formed, as a material, for example, the materials described as the electron transport layer and the electron injection layer in Embodiment Mode 3 can be used. For example, the hole injection / transport layer 104PS, the active layer 105PS, and the electron transport layer 108PS can be formed using a vacuum evaporation method.

[0337] Then, if Fig. 9CAs shown, a sacrificial layer 110PS is formed on the electron transport layer 108PS, and then a resist is applied on the sacrificial layer 110PS, and the resist is formed into a desired shape (resist mask: REG) by photolithography, and a portion of the sacrificial layer 110PS not covered by the obtained resist mask is removed by etching, and the resist mask is removed, and then the hole injection / transport layer 104PS, the active layer 105PS, and the electron transport layer 108PS not covered by the sacrificial layer are removed by etching, and the hole injection / transport layer 104PS, the active layer 105PS, and the electron transport layer 108PS are processed into a shape having a side surface (or exposing a side surface) on the electrode 551PS or a strip shape extending in a direction intersecting the page. As an etching method, dry etching is preferably used. As the sacrificial layer 110PS, the same material as that of the sacrificial layer 110B can be used. In the case where the sacrificial layer 110PS has the stacked structure of the first sacrificial layer and the second sacrificial layer, the second sacrificial layer can be etched with a resist mask, then the resist mask is removed, and the second sacrificial layer is used as a mask to etch a portion of the first sacrificial layer, so as to process the hole injection / transport layer 104PS, the active layer 105PS, and the electron transport layer 108PS into a predetermined shape. By performing these etching processes, Fig.9D shape.

[0338] Then, if Fig. 10A As shown, an insulating layer 107 is formed on the sacrificial layer 110B, the sacrificial layer 110G, the sacrificial layer 110R, and the sacrificial layer 110PS.

[0339] In addition, the insulating layer 107 can be formed by using an ALD method, for example. Fig. 10A As shown, the insulating layer 107 is in contact with each side (each end) of the hole injection / transport layer (104B, 104G, 104R), the light-emitting layer (103R, 103G, 103R), the electron transport layer (108B, 108G, 108R), the hole injection / transport layer 104PS of the light-receiving device, the active layer 105PS, and the electron transport layer 108PS. Thus, it is possible to inhibit oxygen, moisture, or its constituent elements from entering the interior from each side. As a material for the insulating layer 107, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon oxynitride can be used.

[0340] Then, if Fig. 10B As shown in FIG. 1 , a resin film 528a is formed on the insulating layer 107. As the resin film 528a, for example, a negative photosensitive resin or a positive photosensitive resin can be used.

[0341] Then, if Fig. 10CAs shown, by removing part of the resin film 528a, part of the insulating layer 107, and the sacrificial layers (110B, 110G, 110R, 110PS), the top surfaces of the electron transport layers (108B, 108G, 108R, 108PS) are exposed.

[0342] Then, if Fig. 10D As shown in FIG. 5 , the partition wall 528 is formed by performing a heat treatment so that the upper end of the resin film 528a has a curved surface. By making the upper end of the partition wall 528 have a curved surface, it is possible to improve the coverage of the electron injection layer 109 to be formed later. For example, when a positive photosensitive acrylic resin is used as the resin film 528a, it is preferable to make the upper end of the partition wall 528 have a curved surface with a curvature radius (0.2 μm to 3 μm).

[0343] Next, the electron injection layer 109 is formed over the insulating layer 107, the electron transport layers (108B, 108G, 108R, and 108PS), and the partition wall 528. When forming the electron injection layer 109, the material described in Embodiment 3 can be used. For example, the electron injection layer 109 is formed by a vacuum evaporation method.

[0344] Then, if Fig.11A As shown in FIG. 1 , an electrode 552 is formed on the electron injection layer 109. For example, the electrode 552 is formed by vacuum evaporation.

[0345] Through the above steps, the EL layer 103B, the EL layer 103G, the EL layer 103R, and the light-receiving layer 103PS in the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS can be separated and processed.

[0346] Note that since patterning is performed by photolithography in the separation process of these EL layers (EL layer 103B, EL layer 103G, EL layer 103R) and the light-receiving layer 103PS, a high-definition light-receiving device (display panel) can be manufactured. In addition, the end portions (side surfaces) of the EL layers processed by patterning by photolithography have a shape including substantially the same surface (or located on substantially the same plane).

[0347] In addition, the hole injection / transport layer (104B, 104G, 104R) in these EL layers and the hole injection / transport layer 104PS in the light-receiving layer have high conductivity in many cases, and thus, if they are formed as layers commonly used between adjacent light-emitting devices, this may cause crosstalk. Therefore, as in this structural example, by performing patterning using photolithography to separate each EL layer, crosstalk between adjacent light-emitting devices and light-receiving devices can be suppressed.

[0348] In addition, because the photolithography method is used to form a pattern when the hole injection / transport layer (104B, 104G, 104R), light-emitting layer (103R, 103G, 103R), electron transport layer (108B, 108G, 108R) included in each EL layer (EL layer 103B, EL layer 103G and EL layer 103R) in each light-emitting device of the present structure, the hole injection / transport layer 104PS, active layer 105PS and electron transport layer 108PS included in the light-receiving layer 103PS in the light-receiving device are separated and processed, the end portion (side) of the processed EL layer has a shape including approximately the same surface (or, located on approximately the same plane).

[0349] In addition, since the hole injection / transport layers (104B, 104G, 104R) included in each EL layer (EL layer 103B, EL layer 103G, EL layer 103R) in each light-emitting device are When the hole injection / transport layer 104PS, active layer 105PS, and electron transport layer 108PS included in the light receiving layer 103PS of the light receiving device are separated and processed, the pattern is formed by photolithography, so that each processed end (side) has a gap of 580 between adjacent light emitting devices. Fig. 10C In the figure, when the gap 580 is recorded as the distance SE between the EL layers of adjacent light-emitting devices, the smaller the distance SE, the higher the aperture ratio and the higher the definition. On the other hand, since the larger the distance SE, the more the influence of the uneven manufacturing process between adjacent light-emitting devices can be allowed, the manufacturing yield can be improved. Since the light-emitting devices manufactured by the present specification are suitable for miniaturization processes, the distance SE between the EL layers of adjacent light-emitting devices can be greater than 0.5 μm and less than 5 μm, preferably greater than 1 μm and less than 3 μm, more preferably greater than 1 μm and less than 2.5 μm, and further preferably greater than 1 μm and less than 2 μm. Note that the distance SE is typically preferably greater than 1 μm and less than 2 μm (for example, 1.5 μm or thereabouts).

[0350] In this specification, etc., a device manufactured using a metal mask or FMM (Fine Metal Mask) is sometimes referred to as a device of MM (Metal Mask) structure. In addition, in this specification, etc., a device manufactured without using a metal mask or FMM is sometimes referred to as a device of MML (Metal Mask Less) structure. Since the light-emitting device of MML structure is manufactured without using a metal mask, its pixel configuration and pixel shape have a higher degree of freedom in design than the light-emitting device of FMM structure or MM structure.

[0351] The island-shaped EL layer of the light-receiving and light-emitting device of the MML structure is formed by processing the EL layer after the EL layer is formed, without using the pattern of the metal mask. Therefore, a light-receiving and light-emitting device with a higher definition or aperture ratio than the existing light-receiving and light-emitting device can be realized. Furthermore, since the EL layers of each color can be formed separately, a light-receiving and light-emitting device with extremely clear, extremely high contrast and extremely high display quality can be realized. In addition, by providing a sacrificial layer on the EL layer, the damage to the EL layer during the manufacturing process can be reduced, and the reliability of the light-emitting device can be improved.

[0352] In addition, Figure 5A and Fig.11A In the light-emitting device 550B, the light-emitting device 550G, and the light-emitting device 550R shown, the width of the EL layer (103B, 103G, 103R) is approximately equal to the width of the electrode (551B, 551G, 551R), and in the light-receiving device 550PS, the width of the light-receiving layer 103PS is approximately equal to the width of the electrode 551PS, but one embodiment of the present invention is not limited to this.

[0353] In the light-emitting device 550B, the light-emitting device 550G, and the light-emitting device 550R, the width of the EL layer (103B, 103G, 103R) may be smaller than the width of the electrode (551B, 551G, 551R). In addition, in the light-receiving device 550PS, the width of the light-receiving layer 103PS may be smaller than the width of the electrode 551PS. Fig. 11B An example is shown in which the width of the EL layer 103B of the light-emitting device 550B is smaller than the width of the electrode 551B.

[0354] In the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, the width of the EL layer (103B, 103G, and 103R) may be greater than the width of the electrode (551B, 551G, and 551R). In addition, in the light receiving device 550PS, the width of the light receiving layer 103PS may be greater than the width of the electrode 551PS. Fig. 11C An example is shown in which the width of the EL layer 103R in the light-emitting device 550R is larger than the width of the electrode 551R.

[0355] Note that the light-receiving and light-emitting device described in this embodiment is a device including both a light-emitting device and a light-receiving device, and may also be referred to as a light-emitting device including a light-receiving device or a light-receiving device including a light-emitting device. In addition, in the structure of the light-receiving and light-emitting device described in this embodiment, a device that does not include a light-receiving device may also be referred to as a light-emitting device. In addition, in the structure of the light-receiving and light-emitting device described in this embodiment, a device that does not include a light-receiving device may also be referred to as a light-emitting device.

[0356] The structure described in this embodiment mode can be used in combination with the structures described in other embodiment modes as appropriate.

[0357] (Implementation method 5) In this embodiment, referring to FIGS. 12 to 13 Fig.14 Description device 720. Note that FIG. 12 to FIG. Fig.14 The device 720 shown in the embodiment 1 and the embodiment 2 can be said to be a light-emitting device, but the device 720 described in this embodiment can be applied to the display portion of an electronic device, etc., and thus can also be said to be a display panel or a display device. In addition, when the above-mentioned light-emitting device is used as a light source and includes a light-receiving device that can receive light from the light-emitting device, it can also be said to be a light-receiving device. In addition, these light-emitting devices, display panels, display devices, and light-receiving devices include at least a light-emitting device.

[0358] In addition, the light-emitting device, display panel, display device, and light-receiving device of the present embodiment can be a high-resolution or large-scale light-emitting device, display panel, display device, and light-receiving device. Therefore, for example, the light-emitting device, display panel, display device, and light-receiving device of the present embodiment can be used not only for electronic devices with large screens such as television devices, desktop or notebook personal computers, displays for computers, etc., digital signage, large-scale game machines such as pinball machines, etc., but also for digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smart phones, watch-type terminals, tablet terminals, portable information terminals, and sound reproduction devices.

[0359] Fig. 12A It is a top view of these devices (including a light-emitting device, a display panel, a display device, and a light-receiving device) 720.

[0360] exist Fig. 12A In the embodiment, the device 720 has a structure in which a substrate 710 and a substrate 711 are bonded. In addition, the device 720 includes a display region 701, a circuit 704, and a wiring 706. In addition, the display region 701 includes a plurality of pixels. Fig. 12A The pixel 703(i,j) shown includes Fig. 12B The pixel 703(i+1,j) adjacent to the pixel 703(i,j) is shown.

[0361] In addition, if Fig. 12A As shown, the device 720 has an IC (integrated circuit) 712 disposed on a substrate 710 by a COG (Chip On Glass) method or a COF (Chip On Film) method. As the IC 712, for example, an IC including a scan line driver circuit or a signal line driver circuit can be applied. Fig. 12AA structure in which an IC including a signal line driver circuit is used as the IC 712 and a scan line driver circuit is included as the circuit 704 is shown.

[0362] The wiring 706 has a function of supplying signals and power to the display area 701 and the circuit 704. The signals and power are input to the wiring 706 from the outside through the FPC (Flexible Printed Circuit) 713 or from the IC 712. In addition, the IC may not be provided in the device 720. In addition, the IC may be mounted on the FPC by a COF method or the like.

[0363] Fig. 12B The pixel 703 (i, j) and the pixel 703 (i+1, j). That is, the pixel 703 (i, j) may include a plurality of sub-pixels, each of which includes a light-emitting device that emits light of a different color. In addition, in addition to this, the pixel 703 (i, j) may also include a plurality of sub-pixels, each of which includes a light-emitting device that emits light of the same color. The sub-pixels of a pixel may be, for example, three types of sub-pixels. As the three types of sub-pixels, sub-pixels of the three colors of red (R), green (G) and blue (B), sub-pixels of the three colors of yellow (Y), cyan (C) and magenta (M), etc. may be cited. Alternatively, the pixel may include four types of sub-pixels. As the four types of sub-pixels, sub-pixels of the four colors of R, G, B, and white (W), sub-pixels of the four colors of R, G, B, and Y, etc. may be cited. Specifically, a pixel 703 (i, j) displaying blue, a pixel 702G (i, j) displaying green, and a pixel 702R (i, j) displaying red may be used to form the pixel.

[0364] In addition, the sub-pixel may include a light-receiving device in addition to the light-emitting device. In the case where the sub-pixel includes a light-receiving device, the device 720 may also be referred to as a light-receiving device.

[0365] FIG. 12C to FIG. 12F An example of various layouts when a pixel 703 (i, j) includes a sub-pixel 702PS (i, j) having a light receiving device is shown. Fig. 12C The arrangement of the pixels shown is a stripe arrangement. Fig.12D The arrangement of the pixels shown is a matrix arrangement. Fig.12E The pixel shown has a structure in which three sub-pixels (sub-pixel R, sub-pixel G, and sub-pixel S) are arranged vertically adjacent to one sub-pixel (sub-pixel B). Fig.12FIn the pixel shown, three sub-pixels G, B, and R that are longer in the vertical direction are arranged horizontally, and sub-pixels PS and IR that are longer in the horizontal direction are arranged horizontally below them. In addition, there is no particular limitation on the wavelength of light detected by sub-pixel 702PS (i, j), but the light-receiving device of sub-pixel 702PS (i, j) is preferably sensitive to light emitted by the light-emitting device of sub-pixel 702R (i, j), sub-pixel 702G (i, j), sub-pixel 702B (i, j), or sub-pixel 702IR (i, j). For example, it is preferred to detect one or more of light in wavelength regions such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength region.

[0366] In addition, if Fig.12F As shown in FIG. 1 , a sub-pixel 702G(i, j) emitting infrared light may be added to the above group to form a pixel 703(i, j). Specifically, a sub-pixel emitting light including light with a wavelength of not less than 650 nm and not more than 1000 nm may be used for the pixel 703(i, j). j).

[0367] The arrangement of sub-pixels is not limited to the structure shown in FIG12 , and various arrangements may be adopted, such as stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, Pentile arrangement, and the like.

[0368] In addition, as the top surface shape of the sub-pixel, for example, there can be cited a triangle, a quadrangle (including a rectangle, a square), a polygon such as a pentagon, the above polygonal shapes with rounded corners, an ellipse or a circle, etc. Here, the top surface shape of the sub-pixel is equivalent to the top surface shape of the light-emitting region of the light-emitting device.

[0369] When the pixel includes a light emitting device and a light receiving device, the pixel has a light receiving function, so that the contact or approach of an object can be detected while displaying an image. For example, not only all sub-pixels included in the light emitting device display an image, but also some sub-pixels can present light used as a light source and other sub-pixels can display an image.

[0370] In addition, the light receiving area of ​​sub-pixel 702PS(i, j) is preferably smaller than the light emitting area of ​​other sub-pixels. The smaller the light receiving area, the narrower the imaging range, which can suppress blurring of the imaging result and improve the resolution. Therefore, by using sub-pixel 702PS(i, j), imaging can be performed with high definition or high resolution. For example, sub-pixel 702PS(i, j) can be used for imaging for personal identification using fingerprints, palm prints, irises, vein shapes (including vein shapes, artery shapes) or faces.

[0371] In addition, the sub-pixel 702PS(i, j) can be used for a touch sensor (also called a direct touch sensor) or an air touch sensor (also called a suspended sensor, a suspended touch sensor, a non-contact sensor, or a contactless sensor). For example, the sub-pixel 702PS(i, j) preferably detects infrared light. Thus, a touch can be detected even in a dark place.

[0372] Here, the touch sensor or the mid-air touch sensor can detect the approach or contact of an object (a finger, a hand, a pen, etc.). The touch sensor can detect the object when the light-receiving device is in direct contact with the object. In addition, the mid-air touch sensor can detect the object even if the object does not contact the light-receiving device. For example, preferably, the light-receiving device can detect the object within a range where the distance between the light-receiving device and the object is greater than 0.1 mm and less than 300 mm, preferably greater than 3 mm and less than 50 mm. By adopting this structure, the operation can be performed in a state where the object does not directly contact the light-receiving device, in other words, the light-receiving device can be operated in a non-contact (contactless) manner. By adopting the above structure, the risk of the light-receiving device being soiled or damaged can be reduced, or the light-receiving device can be operated without the object directly contacting the stain (for example, garbage, bacteria or viruses, etc.) attached to the light-receiving device.

[0373] Because high-definition video is performed, sub-pixels 702PS(i, j) are preferably set in all pixels included in the light-receiving and light-emitting device. On the other hand, sub-pixels 702PS(i, j) used for touch sensors or air touch sensors do not require high detection accuracy compared to the case of photographing fingerprints, so sub-pixels 702PS(i, j) can be set in some pixels included in the light-receiving and light-emitting device. By making the number of sub-pixels 702PS(i, j) included in the light-receiving and light-emitting device less than the number of sub-pixels 702R(i, j), etc., the detection speed can be increased.

[0374] Next, refer to Fig.13A An example of a pixel circuit including a sub-pixel of a light-emitting device is described. Fig.13A The pixel circuit 530 shown includes a light emitting device (EL) 550, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3. A light emitting diode can be used as the light emitting device 550. In particular, the light emitting device described in Embodiment 1 is preferably used as the light emitting device 550.

[0375] exist Fig.13AIn the embodiment, the gate of the transistor M15 is electrically connected to the wiring VG, one of the source and the drain is electrically connected to the wiring VS, and the other of the source and the drain is electrically connected to one electrode of the capacitor C3 and the gate of the transistor M16. One of the source and the drain of the transistor M16 is electrically connected to the wiring V4, and the other of the source and the drain is electrically connected to the anode of the light-emitting device 550 and one of the source and the drain of the transistor M17. The gate of the transistor M17 is electrically connected to the wiring MS, and the other of the source and the drain is electrically connected to the wiring OUT2. The cathode of the light-emitting device 550 is electrically connected to the wiring V5.

[0376] Wiring V4 and wiring V5 are each supplied with a constant potential. The anode side and cathode side of the light-emitting device 550 can be set to a high potential and a potential lower than the anode side, respectively. The transistor M15 is controlled by a signal supplied to the wiring VG and is used as a selection transistor for controlling the selection state of the pixel circuit 530. In addition, the transistor M16 is used as a driving transistor for controlling the current flowing through the light-emitting device 550 according to the potential supplied to the gate. When the transistor M15 is in the on state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light-emitting brightness of the light-emitting device 550 can be controlled according to the potential. The transistor M17 is controlled by a signal supplied to the wiring MS, and the potential between the transistor M16 and the light-emitting device 550 is output to the outside through the wiring OUT2.

[0377] Fig.13A The pixel circuit 530 includes a transistor M15, a transistor M16, and a transistor M17, Fig. 13B As the transistor M11 , the transistor M12 , the transistor M13 , and the transistor M14 included in the pixel circuit 531 , it is preferable to use a transistor whose semiconductor layer forming a channel includes a metal oxide (oxide semiconductor).

[0378] A transistor using a metal oxide having a wider band gap than silicon and a low carrier density can achieve an extremely low off-state current. Thus, because its off-state current is low, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. Therefore, in particular, transistors M11, M12, and M15 connected in series with capacitor C2 or capacitor C3 preferably use transistors containing oxide semiconductors. In addition, by using transistors that also apply oxide semiconductors for other transistors, manufacturing costs can be reduced.

[0379] Alternatively, transistors M11 to M17 may be transistors whose channels are formed of a semiconductor including silicon. In particular, it is preferred to use highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field effect mobility and higher speed operation can be achieved.

[0380] Note that at least one of the transistors M11 to M17 may be a transistor including an oxide semiconductor, and the other transistors may be a transistor including silicon.

[0381] Next, refer to Fig. 13B An example of a pixel circuit of a sub-pixel having a light-receiving device will be described. Fig. 13B The pixel circuit 531 shown includes a light receiving device (PD) 560, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitor C2. Here, an example in which a photodiode is used as the light receiving device (PD) 560 is shown.

[0382] exist Fig. 13B In the embodiment, the anode of the light receiving device (PD) 560 is electrically connected to the wiring V1, and the cathode is electrically connected to one of the source and drain of the transistor M11. The gate of the transistor M11 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The gate of the transistor M12 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. One of the source and drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M14. The gate of the transistor M14 is electrically connected to the wiring SE1, and the other of the source and drain is electrically connected to the wiring OUT1.

[0383] Wiring V1, wiring V2, and wiring V3 are each supplied with a constant potential. When the light receiving device (PD) 560 is driven with a reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. Transistor M12 is controlled by a signal supplied to wiring RES so that the potential of the node connected to the gate of transistor M13 is reset to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX, and the timing of the potential change of the above-mentioned node is controlled according to the current flowing through the light receiving device (PD) 560. Transistor M13 is used as an amplifying transistor according to the potential output of the above-mentioned node. Transistor M14 is controlled by a signal supplied to wiring SE1 and is used as a selection transistor, which is used to read out the output according to the potential of the above-mentioned node using an external circuit connected to wiring OUT1.

[0384] exist Fig.13A and Fig. 13B In the embodiment, an n-channel transistor is used as the transistor, but a p-channel transistor may also be used.

[0385] The transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 are preferably arranged on the same substrate. In particular, it is preferred that the transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 are mixed and formed in one region and are arranged periodically.

[0386] In addition, one or more layers including one or both of a transistor and a capacitor are preferably provided at a position overlapping with the light receiving device (PD) 560 or the light emitting device (EL) 550. Thus, the effective occupied area of ​​each pixel circuit can be reduced, thereby realizing a high-definition light receiving unit or display unit.

[0387] then, Fig. 13C Shown can be applied to reference Fig.13A and Fig. 13B An example of a specific structure of a transistor in a pixel circuit is described below. Note that as the transistor, a bottom-gate transistor, a top-gate transistor, or the like can be used as appropriate.

[0388] Fig. 13C The transistor shown includes a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed on the insulating film 501C, for example. In addition, the transistor includes an insulating film 516 (insulating film 516A and insulating film 516B) and an insulating film 518.

[0389] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0390] The conductive film 504 includes a region overlapping with the region 508C, and the conductive film 504 functions as a gate electrode.

[0391] The insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 has a function as a first gate insulating film.

[0392] The conductive film 512A has one of the function of a source electrode and the function of a drain electrode, and the conductive film 512B has the other of the function of a source electrode and the function of a drain electrode.

[0393] In addition, the conductive film 524 can be used for the transistor. The conductive film 524 includes a region in which the semiconductor film 508 is sandwiched between the conductive film 504. The conductive film 524 has a function of a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and has a function of a second gate insulating film.

[0394] The insulating film 516 is used, for example, as a protective film that covers the semiconductor film 508. Specifically, for example, a film containing a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used as the insulating film 516.

[0395] For example, a material that can suppress diffusion of oxygen, hydrogen, water, alkali metals, alkaline earth metals, and the like is preferably used for the insulating film 518. Specifically, for example, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, and the like can be used as the insulating film 518. In addition, as for the number of oxygen atoms and the number of nitrogen atoms contained in silicon oxynitride and aluminum oxynitride, respectively, it is preferable that the number of nitrogen atoms is larger.

[0396] In the process of forming a semiconductor film for a transistor of a pixel circuit, a semiconductor film for a transistor of a driver circuit may be formed. For example, a semiconductor film having the same composition as that of a semiconductor film in a transistor of a pixel circuit may be used for the driver circuit.

[0397] As the semiconductor film 508, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium) and zinc are preferably contained. In particular, M is preferably one or more selected from aluminum, gallium, yttrium and tin.

[0398] In particular, as the semiconductor film 508, an oxide (IGZO) containing indium (In), gallium (Ga), and zinc (Zn) is preferably used. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.

[0399] When the semiconductor film is an In-M-Zn oxide, it is preferred that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Examples of the atomic ratio of the metal elements in the In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or in the vicinity thereof, a composition of In:M:Zn=1:1:1.2 or in the vicinity thereof, a composition of In:M:Zn=1:3:2 or in the vicinity thereof, a composition of In:M:Zn=1:3:4 or in the vicinity thereof, a composition of In:M:Zn=2:1:3 or in the vicinity thereof, a composition of In:M:Zn=3:1:2 or in the vicinity thereof, and a composition of In:M:Zn=1:3:4 or in the vicinity thereof. =4:2:3 or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that the nearby compositions include a range of ±30% of the desired atomic number ratio.

[0400] When the composition is described as an atomic ratio of In:Ga:Zn=4:2:3 or thereabouts, the following cases are included: when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. In addition, when the composition is described as an atomic ratio of In:Ga:Zn=5:1:6 or thereabouts, the following cases are included: when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. In addition, when the composition is described as an atomic ratio of In:Ga:Zn=1:1:1 or thereabouts, the following cases are included: when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0401] There is no particular restriction on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. When a crystalline semiconductor is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0402] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). Note that examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0403] Alternatively, a transistor (Si transistor) using silicon for the channel formation region may be used. Examples of silicon include single crystal silicon (single crystal Si), polycrystalline silicon, amorphous silicon, and the like. In particular, a transistor (hereinafter also referred to as an LTPS transistor) containing low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer may be used. The LTPS transistor has high field effect mobility and good frequency characteristics.

[0404] By using Si transistors such as LTPS transistors, a circuit that needs to be driven at a high frequency (e.g., a source driver circuit) and a display unit can be formed on the same substrate. Therefore, the external circuit mounted on the light-emitting device can be simplified, and the component cost and mounting cost can be reduced.

[0405] Compared with transistors using amorphous silicon, the field effect mobility of OS transistors is very high. In addition, the leakage current between the source and the drain of the OS transistor in the off state (hereinafter also referred to as the off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. In addition, by using OS transistors, the power consumption of the light-emitting device can be reduced.

[0406] In addition, the off-state current value of the OS transistor with a channel width of 1 μm at room temperature can be 1aA (1×10 -18 A) or less, 1zA(1×10 -21 A) or less or 1yA(1×10 -24 Note that the off-state current value of a Si transistor with a channel width of 1 μm at room temperature is 1 fA (1×10 -15 A) or more and 1pA (1×10 -12 Therefore, it can be said that the off-state current of the OS transistor is about 10 bits lower than the off-state current of the Si transistor.

[0407] In addition, when the luminance of the light-emitting device included in the pixel circuit is increased, it is necessary to increase the amount of current flowing through the light-emitting device. To this end, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain withstand voltage of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased to improve the luminance of the light-emitting device.

[0408] In addition, when the transistor operates in the saturation region, the OS transistor can make the change in the source-drain current relative to the change in the gate-source voltage smaller than the Si transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail according to the change in the gate-source voltage, so the amount of current flowing through the light-emitting device can be controlled. As a result, the grayscale of the pixel circuit can be increased.

[0409] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can make a stable current (saturation current) flow even if the source-drain voltage is gradually increased. Therefore, by using the OS transistor as a driving transistor, even if, for example, the current-voltage characteristics of the light-emitting device are uneven, a stable current can flow through the light-emitting device. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current remains almost unchanged, so the light-emitting brightness of the light-emitting device can be stabilized.

[0410] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, “suppression of black blur”, “increase in light emission brightness”, “multi-grayscale”, “suppression of unevenness in light emitting devices”, etc. can be achieved.

[0411] Alternatively, a semiconductor film of a transistor for a driver circuit and a semiconductor film of a transistor for a pixel circuit can be formed by the same process. Alternatively, a driver circuit can be formed on the same substrate as a substrate on which a pixel circuit is formed. Alternatively, the number of components constituting an electronic device can be reduced.

[0412] In addition, silicon can also be used as the semiconductor film 508. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor containing low temperature polycrystalline silicon (LTPS (Low Temperature PolySilicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field effect mobility and good frequency characteristics.

[0413] By using silicon transistors such as LTPS transistors, a circuit that needs to be driven at a high frequency (e.g., a source driver circuit) and a display unit can be formed on the same substrate. Therefore, the external circuit mounted on the light-emitting device can be simplified, and the component cost and mounting cost can be reduced.

[0414] In addition, it is preferred that a transistor (hereinafter also referred to as an OS transistor) containing a metal oxide (hereinafter also referred to as an oxide semiconductor) in a semiconductor forming a channel is used for at least one of the transistors included in the pixel circuit. Compared with a transistor using amorphous silicon, the field effect mobility of the OS transistor is very high. In addition, the leakage current between the source and the drain in the off state of the OS transistor (hereinafter also referred to as the off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. In addition, by using an OS transistor, the power consumption of the light-emitting device can be reduced.

[0415] By using LTPS transistors for some of the transistors included in the pixel circuit and OS transistors for other transistors, a light-emitting device with low power consumption and high driving capability can be realized. As a more preferred example, it is preferred that the OS transistor is used for a transistor used as a switch for controlling conduction / non-conduction between wirings, and the LTPS transistor is used for a transistor for controlling current, etc. In addition, a structure combining the two transistors, the LTPS transistor and the OS transistor, is sometimes called LTPO. By adopting LTPO, a display panel with low power consumption and high driving capability can be realized.

[0416] For example, one of the transistors provided in the pixel circuit is used as a transistor for controlling the current flowing through the light emitting device, and may also be referred to as a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting device. An LTPS transistor is preferably used as the driving transistor. Therefore, the current flowing through the light emitting device in the pixel circuit can be increased.

[0417] On the other hand, another of the transistors provided in the pixel circuit is used as a switch for controlling the selection / non-selection of the pixel, and may also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line). The selection transistor preferably uses an OS transistor. Therefore, even if the frame rate is significantly reduced (for example, below 1fps), the grayscale of the pixel can be maintained, thereby reducing power consumption by stopping the driver when displaying a static image.

[0418] In the case of using an oxide semiconductor for the semiconductor film, the device 720 has a structure in which an oxide semiconductor is used for the semiconductor film and includes a light-emitting device having an MML (no fine metal mask) structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current, side leakage current, etc.) can be made extremely low. In addition, by adopting the above structure, when the image is displayed on the display device, the viewer can observe one or more of the sharpness of the image, the sharpness of the image, the high color saturation and the high contrast. In addition, by adopting a structure in which the leakage current that can flow through the transistor and the lateral leakage current between the light-emitting devices are extremely low, a display (also called a pure black display) with very little light leakage (so-called blackening) that can occur when displaying black can be performed.

[0419] In particular, when the above-mentioned SBS structure is adopted in the light-emitting device of the MML structure, the layer arranged between the light-emitting devices (for example, the organic layer commonly used between the light-emitting devices, also called the common layer) is divided, thereby enabling a display with no side leakage or very little side leakage.

[0420] In addition, the structure of the transistor used for the display panel can be appropriately selected according to the screen size of the display panel. For example, when a single crystal Si transistor is used as a transistor of the display panel, it can be applied to a display panel with a screen size of 0.1 inches or more and 3 inches or less. In addition, when an LTPS transistor is used as a transistor of the display panel, it can be applied to a display panel with a screen size of 0.1 inches or more and 30 inches or less, and preferably applied to a display panel with a screen size of 1 inch or more and 30 inches or less. In addition. When the display panel adopts LTPO (a structure combining LTPS transistors and OS transistors), it can be applied to a display panel with a screen size of 0.1 inches or more and 50 inches or less, and preferably applied to a display panel with a screen size of 1 inch or more and 50 inches or less. In addition, when an OS transistor is used as a transistor of the display panel, it can be applied to a display panel with a screen size of 0.1 inches or more and 200 inches or less, and preferably applied to a display panel with a screen size of 50 inches or more and 100 inches or less.

[0421] Note that due to the size of the single-crystal Si substrate, it is difficult to enlarge the display panel using single-crystal Si transistors. In addition, LTPS transistors use laser crystallization devices in the manufacturing process, and it is difficult to apply them to large-scale (typically, screen sizes with a diagonal size of more than 30 inches). On the other hand, OS transistors do not have restrictions such as the use of laser crystallization devices in the manufacturing process, and can be manufactured at a lower process temperature (typically below 450°C), so they can be applied to display panels with larger areas (typically, diagonal sizes of 50 inches or more and 100 inches or less). In addition, when LTPO is used, it can be applied to display panel sizes between the sizes when using LTPS transistors and the sizes when using OS transistors (typically, diagonal sizes of 1 inch or more and 50 inches or less).

[0422] Next, a cross-sectional view of the light receiving and emitting device is shown. Fig.14 yes Fig. 12A A cross-sectional view of the light-receiving and light-emitting device shown.

[0423] Fig.14 These are cross-sectional views showing a portion of a region including the FPC 713 and the wiring 706 and a portion of a display region 701 including the pixel 703 (i, j) cut out.

[0424] exist Fig.14 In the embodiment, the light emitting and receiving device 700 includes a functional layer 520 between a first substrate 510 and a second substrate 770. The functional layer 520 includes wiring (VS, VG, V1, V2, V3, V4, V5) and the like for electrically connecting the transistors (M11, M12, M13, M14, M15, M16, M17) and capacitors (C2, C3) and the like described in FIG. Fig.14 The functional layer 520 is shown to include a pixel circuit 530X(i, j), a pixel circuit 530S(i, j), and a circuit GD, but the present invention is not limited to this structure.

[0425] The pixel circuit (eg, Fig.14 The pixel circuit 530X (i, j) and the pixel circuit 530S (i, j) shown in FIG. 5 are connected to the light emitting device and the light receiving device (eg, Fig.14 The light emitting device 550X(i, j) and the light receiving device 550S(i, j) are electrically connected. Specifically, the light emitting device 550X(i, j) is connected via wiring. 591X is electrically connected to the pixel circuit 530X(i, j), and the light receiving device 550S(i, j) is electrically connected to the pixel circuit 530S(i, j) through the wiring 591S. In addition, an insulating layer 705 is provided on the functional layer 520, the light emitting device, and the light receiving device, and the insulating layer 705 has the function of bonding the second substrate 770 to the functional layer 520.

[0426] Note that a substrate including touch sensors in a matrix can be used as the second substrate 770. For example, a substrate including a capacitive touch sensor or an optical touch sensor can be used for the second substrate 770. Thus, the light receiving and light emitting device of one embodiment of the present invention can be used as a touch panel.

[0427] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0428] (Implementation 6) In this embodiment, refer to FIG. 15A to FIG. 17B The structure of an electronic device according to one embodiment of the present invention will be described.

[0429] FIG. 15A to FIG. 17B It is a diagram for explaining the structure of an electronic device according to one embodiment of the present invention. Fig.15A is a block diagram of an electronic device, FIG. 15B to FIG. 15E It is a perspective view illustrating the structure of an electronic device. FIG. 16A to FIG. 16E It is a perspective view illustrating the structure of an electronic device. Fig.17A and Fig. 17B It is a perspective view illustrating the structure of an electronic device.

[0430] The electronic device 5200B described in this embodiment includes a computing device 5210 and an input / output device 5220 (see Fig.15A ).

[0431] The computing device 5210 has a function of being supplied with operation data, and has a function of supplying image data based on the operation data.

[0432] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 5290, and has a function of supplying operation data and a function of being supplied with image data. In addition, the input / output device 5220 has a function of supplying detection data, a function of supplying communication data, and a function of being supplied with communication data.

[0433] The input unit 5240 has a function of supplying operation data. For example, the input unit 5240 supplies operation data according to an operation of a user of the electronic device 5200B.

[0434] Specifically, a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, a camera device, an audio input device, a line of sight input device, a posture detection device, or the like can be used for the input unit 5240 .

[0435] The display portion 5230 includes a display panel and has a function of displaying image data. For example, the display panel described in Embodiment 4 can be used for the display portion 5230.

[0436] The detection unit 5250 has a function of supplying detection data. For example, it has a function of detecting the surrounding environment where the electronic device is used and supplying the detection data.

[0437] Specifically, an illumination sensor, a camera device, a posture detection device, a pressure sensor, a human body sensing sensor, or the like can be used for the detection unit 5250 .

[0438] The communication unit 5290 has the function of being supplied with communication data and the function of supplying communication data. For example, it has the function of connecting with other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has the functions of wireless LAN communication, telephone communication, short-range wireless communication, etc.

[0439] Fig. 15B An electronic device having an outer shape along a cylindrical column or the like is shown. As an example, a digital sign or the like can be cited. A display panel of one embodiment of the present invention can be used for the display unit 5230. Note that it can also have a function of changing the display method according to the illumination of the use environment. In addition, it has a function of changing the display content by sensing the presence of a human body. Therefore, for example, it can be set on a column of a building. Alternatively, it can display advertisements or guides.

[0440] Fig. 15C An electronic device having a function of generating image data according to the trajectory of an indicator used by a user is shown. An electronic blackboard, an electronic message board, a digital sign, etc. can be cited as an example. Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used as a display area. Alternatively, a plurality of display panels can be arranged and used as a multi-screen display panel.

[0441] Fig.15DAn electronic device that can receive data from other devices and display it on the display unit 5230 is shown. As an example, a wearable electronic device can be cited. Specifically, several options can be displayed or the user can select several items from the options and reply them to the sender of the data. In addition, for example, there is a function of changing the display method according to the illumination of the use environment. Thereby, for example, the power consumption of the wearable electronic device can be reduced. In addition, for example, the image is displayed on the wearable electronic device in a manner that the wearable electronic device can be appropriately used even in an environment with strong external light, such as outdoors on a sunny day.

[0442] Fig.15E An electronic device including a display unit 5230 having a curved surface gently curved along the side of a frame is shown. As an example, a mobile phone or the like can be cited. In addition, the display unit 5230 includes a display panel, and the display panel has, for example, a function of displaying on its front, side, top, and back. Thus, for example, data can be displayed not only on the front of the mobile phone, but also on the side, top, and back of the mobile phone.

[0443] Fig.16A An electronic device that can receive data from the Internet and display it on the display unit 5230 is shown. As an example, a smartphone can be cited. For example, the notification made can be confirmed on the display unit 5230. In addition, the notification made can be sent to other devices. In addition, for example, there is a function of changing the display method according to the illumination of the use environment. Thereby, the power consumption of the smartphone can be reduced. In addition, for example, the image is displayed on the smartphone in a manner that allows the smartphone to be appropriately used even in an environment with strong external light, such as outdoors on a sunny day.

[0444] Fig. 16B An electronic device that can use a remote controller as an input unit 5240 is shown. As an example, a television system or the like can be cited. In addition, for example, data can be received from a broadcasting station or the Internet and displayed on the display unit 5230. In addition, the user can be photographed using the detection unit 5250. In addition, the user's image can be sent. In addition, the user's viewing history can be obtained and provided to a cloud service. In addition, recommended data can be obtained from the cloud service and displayed on the display unit 5230. In addition, programs or dynamic images can be displayed based on the recommended data. In addition, for example, there is a function of changing the display method according to the illumination of the use environment. Thus, images can be displayed on the television system in a manner that allows the television system to be appropriately used even in an environment where strong external light is incident on a sunny day.

[0445] Fig. 16CThe electronic device that can receive teaching materials from the Internet and display them on the display unit 5230 is shown. As an example, a tablet computer can be cited. In addition, a report can be input using the input unit 5240 and sent to the Internet. In addition, the correction results or evaluations of the report can be obtained from the cloud service and displayed on the display unit 5230. In addition, appropriate teaching materials can be selected based on the evaluation and displayed on the display unit 5230.

[0446] For example, an image signal can be received from another electronic device and displayed on the display portion 5230. In addition, the display portion 5230 can be placed on a stand or the like and used as a sub-display. For example, an image can be displayed on a tablet computer in such a manner that the electronic device can be appropriately used even in an environment with strong external light, such as outdoors on a sunny day.

[0447] Fig.16D An electronic device including a plurality of display units 5230 is shown. As an example, a digital camera or the like can be cited. For example, an image captured using the detection unit 5250 can be displayed on the display unit 5230. In addition, the captured image can be displayed on the detection unit. In addition, the captured image can be modified using the input unit 5240. In addition, text can be added to the captured image. In addition, it can be sent to the Internet. In addition, there is a function of changing the shooting conditions according to the illumination of the use environment. Thus, for example, the subject can be displayed on the digital camera in a manner that the image can be appropriately seen even in an environment with strong external light, such as outdoors on a sunny day.

[0448] Fig.16E An electronic device that can control other electronic devices by using other electronic devices as slaves and using the electronic device of this embodiment as a master is shown. As an example, a portable personal computer or the like can be cited. For example, a part of the image data can be displayed on the display unit 5230 and another part of the image data can be displayed on the display unit of the other electronic device. In addition, an image signal can be supplied. In addition, the communication unit 5290 can be used to obtain data written from the input unit of the other electronic device. Thus, for example, a larger display area can be utilized using a portable personal computer.

[0449] Fig.17AAn electronic device including a detection unit 5250 for detecting acceleration or orientation is shown. As an example, a goggles-type electronic device can be cited. In addition, the detection unit 5250 can supply data on the position of the user or the direction in which the user is facing. In addition, the electronic device can generate image data for the right eye and image data for the left eye based on the position of the user or the direction in which the user is facing. In addition, the display unit 5230 includes a display area for the right eye and a display area for the left eye. Thus, for example, a virtual reality space image that can obtain a realistic feeling can be displayed on a goggles-type electronic device.

[0450] Fig. 17B An electronic device including a camera device and a detection unit 5250 for detecting acceleration or orientation is shown. As an example, a glasses-type electronic device can be cited. In addition, the detection unit 5250 can provide data on the user's position or the direction the user is facing. In addition, the electronic device can generate image data based on the user's position or the direction the user is facing. Thus, for example, data can be added to a real scene and displayed. In addition, an image of an augmented reality space can be displayed on a glasses-type electronic device.

[0451] Note that this embodiment mode can be combined with other embodiment modes described in this specification as appropriate.

[0452] (Implementation 7) In this embodiment, a structure in which the light-emitting device described in Embodiment 1 is used in a lighting device is described with reference to FIG. 18. Note that Fig.18A It is along Fig.18B A cross-sectional view of line segment ef in a top view of the lighting device shown.

[0453] In the lighting device of this embodiment, a first electrode 401 is formed on a light-transmitting substrate 400 serving as a support. The first electrode 401 corresponds to the first electrode 101 in Embodiment 1. When light is extracted from the first electrode 401 side, the first electrode 401 is formed using a light-transmitting material.

[0454] A pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400 .

[0455] An EL layer 403 is formed over the first electrode 401. The EL layer 403 has a structure corresponding to the EL layer 103 in Embodiment 3. Note that for these structures, refer to the respective descriptions.

[0456] The second electrode 404 is formed to cover the EL layer 403. The second electrode 404 corresponds to the second electrode 102 in Embodiment 1. When light is extracted from the first electrode 401 side, the second electrode 404 is formed using a material with high reflectivity. The second electrode 404 is connected to the pad 412 to supply voltage to the second electrode 404.

[0457] As described above, the lighting device described in this embodiment includes a light-emitting device including the first electrode 401, the EL layer 403, and the second electrode 404. Since the light-emitting device has high light emission efficiency, the lighting device of this embodiment can be a low-power lighting device.

[0458] The substrate 400 on which the light emitting device having the above structure is formed and the sealing substrate 407 are fixed and sealed using the sealing materials (405, 406), thereby manufacturing a lighting device. In addition, only one of the sealing materials 405 and 406 may be used. In addition, the inner sealing material 406 (at Fig.18B The semiconductor device (not shown) is mixed with a desiccant, thereby absorbing moisture and improving reliability.

[0459] Furthermore, the pad 412 and part of the first electrode 401 can be used as an external input terminal by extending outside the sealing materials 405 and 406. Alternatively, an IC chip 420 or the like on which a converter or the like is mounted may be provided on the external input terminal.

[0460] (Implementation 8) In this embodiment, refer to Fig.19 An application example of a lighting device manufactured by applying the light-emitting device of one embodiment of the present invention or a light-emitting device which is a part thereof will be described.

[0461] As an indoor lighting device, a ceiling spotlight 8001 can be used. As a ceiling spotlight 8001, there are direct installation types and embedded types. This lighting device is manufactured by combining a light-emitting device with a frame or a cover. In addition, it can also be applied to a lighting device of a chandelier (suspended from the ceiling with wires).

[0462] In addition, the foot lamp 8002 illuminates the ground, which can improve the safety of the foot. For example, it is very effective to use it in bedrooms, stairs, and passages. In this case, the size and shape of the foot lamp can be appropriately changed according to the size or structure of the room. In addition, the foot lamp 8002 can also be a mounting type lighting device formed by combining a light emitting device and a bracket.

[0463] In addition, the sheet lighting 8003 is a thin film lighting device. Because it is attached to the wall and used, it does not take up space and can be applied to various purposes. In addition, it is easy to achieve a large area. In addition, it can also be attached to a wall with a curved surface, a frame, etc.

[0464] Alternatively, a lighting device 8004 may be used in which light from a light source is controlled so as to be emitted only in a desired direction.

[0465] The desk lamp 8005 includes a light source 8006 . As the light source 8006 , a light-emitting device according to one embodiment of the present invention or a light-emitting device which is a part thereof can be used.

[0466] By using the light-emitting device of one embodiment of the present invention or a light-emitting device which is a part of the light-emitting device, other than the above, in a part of indoor furniture, a lighting device having the function of furniture can be provided.

[0467] As described above, various lighting devices to which the light emitting device is applied can be obtained. In addition, such lighting devices are included in one embodiment of the present invention.

[0468] The structure described in this embodiment mode can be used in combination with the structures described in other embodiment modes as appropriate. [Example 1]

[0469] <<Synthesis example 1>> In this example, a method for synthesizing the organic compound N-(9,9-dimethyl-9H-fluorene-2-yl)-N-(terphenyl-4'-yl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as: FopTPBnf) represented by structural formula (300) in Embodiment 1 is described. The structural formula of FopTPBnf is shown below.

[0470] [Chemical formula 33]

[0471] <Step 1: Synthesis of N-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-benzo[b]naphtho[1,2-d]furan-8-amine> 4.2 g (20 mmol) of 2-amino-9,9-dimethylfluorene and 8.4 g (20 mmol) of 8-iodo-6-phenyl-benzo[b]naphtho[1,2-d]furan were placed in a 300 mL three-necked flask, and the air in the flask was replaced with nitrogen. 0.12 g (0.30 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (abbreviated as SPhos), 2.9 g (30 mmol) of sodium tert-butoxide (abbreviated as t-BuONa), 75 mL of xylene, and 86 mg (0.15 mmol) of bis(dibenzylideneacetone)palladium(0) (abbreviated as Pd(dba)2) were added to the flask and stirred at 60°C for 7 hours. After stirring, water was added to the mixture, and the alkali contained in the mixture was dissolved in the water layer by ultrasonic treatment. The obtained mixture was filtered, and the obtained solid was washed with toluene, ethanol, and water. The obtained solid is dissolved in toluene and the insoluble matter is removed by hot filtration. The obtained filtrate is concentrated and the obtained solid is purified by recrystallization (solvent: toluene). The precipitated solid is collected by suction filtration and washed with toluene, acetone and hexane. The obtained solid is dried to obtain the target white solid (6.5 g, yield 65%). The following formula (a-1) shows the synthesis scheme of step 1.

[0472] [Chemical formula 34]

[0473] Fig. 20A and Fig. 20B The white solid obtained in step 1 is shown 1 H NMR spectrum. 1 HNMR measurement results: It can be seen that N-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-benzo[b]naphtho[1,2-d]furan-8-amine was obtained in this synthesis example.

[0474] 1H NMR (dichloromethane-d2 500 MHz): δ = 8.69 (d, J = 8.0 Hz, 1H), 8.11 (d, J = 8.3 Hz, 1H), 8.07 (s, 1H), 8.03 (dd, J = 6.0, 2, 0 Hz, 1H), 7.97-7.95 (m, 2H), 7.76 (t, J = 7.4 Hz, 1H), 7.70 (d, J = 8.0 Hz, 1H), 7.68 (d, J=7.4Hz, 1H), 7.61 (t, J=8.0Hz, 1H), 7.52-7.49 (m, 2H), 7.46-7.40 (m, 4H), 7.35-7.31 (m, 2H), 7.27 (t, J=7.4Hz, 1H), 7.22 (dd, J=8.0, 2.0Hz, 1H), 6.41 (br, 1H), 1.46 (s, 6H).

[0475] <Step 2: Synthesis of FopTPBnf> 1.9 g (6.2 mmol) of 4'-bromo-1,1':3',1"-terphenyl and 3.2 g (6.2 mmol) of N-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-benzo[b]naphtho[1,2-d]furan-8-amine were placed in a 200 mL three-necked flask, and the air in the flask was replaced with nitrogen. 51 mg (0.12 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (abbreviated as SPhos), 1.2 g (12 mmol) of sodium tert-butoxide (abbreviated as t-BuONa), 45 mL of xylene, and 36 mg (62 μmol) of bis(dibenzylideneacetone)palladium(0) (abbreviated as Pd(dba)2) were added to the flask, and the mixture was refluxed at 150° C. for 7 hours with stirring.

[0476] After stirring, water was added to the mixture, and the obtained mixture was separated into an organic layer and an aqueous layer, and the aqueous layer was extracted with toluene. The extract was combined with the organic layer, and then washed twice with water, and then washed with saturated brine. The obtained organic layer was dried with magnesium sulfate, and the magnesium sulfate was removed by gravity filtration. The obtained filtrate was concentrated, and the obtained solid was vacuum dried to obtain 5.2 g of a yellow viscous solid. The obtained yellow viscous solid was purified by silica gel column chromatography (hexane and toluene were used as developing solvents. Note that as the ratio of hexane and toluene, a ratio of hexane: toluene = 10: 1 was used first, and then a ratio of hexane: toluene = 4: 1 was used) and recrystallization (a mixed solvent of hexane and toluene was used as the solvent), and then vacuum dried to obtain the target pale yellow solid (2.8 g, yield 63%).

[0477] Next, 2.8 g of the pale yellow solid was sublimated and purified by gradient sublimation. During the sublimation purification, argon was introduced at 15 mL / min, the pressure was 4.2 Pa, and the heating temperature was a three-stage temperature gradient of 293°C / 290°C / 250°C, and the solid was heated for 20 hours. After sublimation purification, a pale yellow solid (2.0 g, recovery rate 71%) was obtained. The following formula (a-2) shows the synthesis scheme of step 2.

[0478] [Chemical formula 35]

[0479] Fig.21A and Fig. 21B The light yellow solid obtained in step 2 is shown 1 H NMR spectrum. 1 HNMR measurement results: It can be seen that FopTPBnf was obtained in this synthesis example.

[0480] 1 H NMR (dichloromethane-d2 500 MHz): δ = 8.63 (d, J = 8.0 Hz, 1H), 8.07 (d, J = 8.0 Hz, 2H), 8.02 (s, 1H), 7.75-7.56 (m, 7H), 7.52-7.42 (m, 6H), 7.36-7.28 (m, 6H), 7.22 (t, J = 7.4 Hz, 1H), 7.13 (d, J = 8.0 Hz, 1H), 7.06-7.04 (m, 3H), 6.92-6.73 (m, 5H), 1.20 (s, 6H).

[0481] <Measurement of physical properties> Next, the ultraviolet-visible absorption spectra (hereinafter referred to as "absorption spectra") and emission spectra of the toluene solution and solid thin film of FopTPBnf were measured. The solid thin film was produced on a quartz substrate by vacuum evaporation.

[0482] In the measurement of the absorption spectrum, an ultraviolet-visible spectrophotometer (V-770DS manufactured by JASCO Corporation) was used. The absorption spectrum of FopTPBnf in toluene solution was calculated by subtracting the absorption spectrum obtained by measuring only toluene in a quartz dish from the absorption spectrum obtained by measuring the toluene solution of FopTPBnf in a quartz dish. In addition, the absorption spectrum of the film was calculated based on the absorbance (-log 10 [%T / (100- Note that %T represents transmittance and %R represents reflectance. In the measurement of the emission spectrum, a fluorescence spectrophotometer (FP-8600DS manufactured by JASCO Corporation) was used.

[0483] Fig. 22 The measurement results of the absorption spectrum and emission spectrum of the obtained toluene solution are shown. The horizontal axis represents the wavelength, and the vertical axis represents the absorption intensity and the emission intensity.

[0484] exist Fig. 22 In the toluene solution of FopTPBnf, an absorption peak was observed near 347 nm, and a peak of emission wavelength was observed near 427 nm (excitation wavelength: 347 nm).

[0485] Fig.23 The measurement results of the absorption spectrum and emission spectrum of the obtained solid thin film are shown. The horizontal axis represents the wavelength, and the vertical axis represents the absorption intensity and the emission intensity.

[0486] Depend on Fig.23 It can be seen that the solid thin film of FopTPBnf has absorption peaks observed near 330 nm, 352 nm, and 383 nm, and a peak of emission wavelength is observed near 439 nm (excitation wavelength: 350 nm).

[0487] Next, the results of the calculation of the HOMO level and LUMO level of FopTPBnf based on cyclic voltammetry (CV) measurement are shown. The calculation method is shown below.

[0488] As a measuring device, an electrochemical analyzer (ALS model 600A or 600C manufactured by BAS Co., Ltd.) was used. As a solution in the CV measurement, dehydrated dimethylformamide (DMF) (manufactured by Aldrich Co., Ltd., 99.8%, catalog number: 22705-6) was used as a solvent, and tetra-n-butylammonium perchlorate (n-Bu4NClO) was used as a supporting electrolyte. 4) The sample was prepared by dissolving the sample at a concentration of 100 mmol / L (manufactured by Tokyo Chemical Industry Co., Ltd., catalog number: T0836), and dissolving the sample to be measured at a concentration of 2 mmol / L. In addition, a platinum electrode (manufactured by BAS Inc., PTE platinum electrode) was used as the working electrode, a platinum electrode (manufactured by BAS Inc., Pt counter electrode (5 cm) for VC-3) was used as the auxiliary electrode, and Ag / Ag was used as the reference electrode. + Electrode (manufactured by BAS Inc., RE7 non-aqueous solvent type reference electrode).

[0489] In addition, the measurement was performed at room temperature (20°C to 25°C). The scanning rate during CV measurement was unified to 0.1 V / sec, and the oxidation potential Ea [V] and reduction potential Ec [V] relative to the reference electrode were measured. Ea is the oxidation peak potential E obtained by forward potential scanning. pa and reduction peak potential E pc The standard oxidation potential (=(E pa +E pc ) / 2), Ec is the oxidation peak potential E obtained by negative potential scanning pa [V] and reduction peak potential E pc [V] The standard reduction potential (=(E pa +E pc ) / 2). Here, since the potential energy of the reference electrode used in this embodiment relative to the vacuum level is known to be -4.94 [eV], the HOMO energy level and the LUMO energy level can be calculated from the formula: HOMO energy level [eV] = -4.94 - Ea, LUMO energy level [eV] = -4.94 - Ec.

[0490] Furthermore, CV measurement was repeated 100 times, and the oxidation-reduction wave in the measurement of the 100th cycle was compared with the oxidation-reduction wave in the measurement of the 1st cycle to examine the electrical stability of the compound.

[0491] From the results, it can be seen that the HOMO energy level of FopTPBnf is -5.47eV and the LUMO energy level is -2.49eV. In the repeated measurement of the oxidation-reduction wave, when the waveform of the measurement of the first cycle is compared with the waveform of the 100th cycle, the peak intensity is maintained at 81% in the Ea measurement and 92% in the Ec measurement, which confirms that FopTPBnf has good oxidation resistance and reduction resistance.

[0492] In addition, FopTPBnf was subjected to thermogravimetry-differential thermal analysis (TG-DTA). A high vacuum differential thermogravimetric analyzer (TG-DTA2410SA manufactured by Bruker AXS) was used for the measurement. The measurement was performed under the conditions of atmospheric pressure, a heating rate of 10°C / min, and a nitrogen flow (flow rate of 200 mL / min).

[0493] According to thermogravimetric-differential thermal analysis, the temperature (decomposition temperature) at which the weight of FopTPBnf measured by thermogravimetric measurement decreased by 5% relative to the weight at the beginning of measurement was 427°C, indicating that FopTPBnf is a substance with high heat resistance.

[0494] In addition, differential scanning calorimetry (DSC) of FopTPBnf was performed using DSC8500 manufactured by PerkinElmer, Inc. In the differential scanning calorimetry, the following operation was performed twice in succession: the temperature was raised from -10°C to 350°C at a heating rate of 40°C / min, then the temperature was maintained at the same temperature for 3 minutes, and then the temperature was cooled to -10°C at a cooling rate of 100°C / min.

[0495] The DSC measurement result of the second operation shows that the glass transition temperature of FopTPBnf is 145° C. Since the glass transition temperature of a general hole transport material is about 100° C. to 120° C., FopTPBnf is a material having higher heat resistance than that of a general hole transport material.

[0496] <Structural analysis by calculation> Next, the distribution of HOMO and LUMO of FopTPBnf is analyzed. As a calculation method, vibration (spin density) analysis is performed in the case of the most stable structure with the lowest energy level of the singlet ground state (S0) of the compound. The calculation method uses density functional theory (DFT: Density Functional Theory). All energies calculated by DFT are expressed as the sum of potential energy, electrostatic energy between electrons, kinetic energy of electrons, and exchange-correlation energy including all other complex interactions between electrons. In DFT, since the exchange-correlation effect is approximated by the functional (meaning of function of function) of the single electron potential represented by the electron density, high-speed calculations can be performed. Here, B3LYP, a hybrid functional, is used to ...

Claims

1. A light emitting device, include: a first electrode; a second electrode; Luminescent layer; as well as First floor, Wherein, the light-emitting layer is located between the first electrode and the second electrode, The first layer is located between the first electrode and the light-emitting layer, The light-emitting layer contains a light-emitting substance. The first layer comprises a first organic compound, The HOMO energy level of the first organic compound is below -5.40 eV, Furthermore, the first organic compound is an organic compound represented by the following general formula (G1). [Chemical formula 1] (Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom. ) 2. A light emitting device, include: a first electrode; a second electrode; Luminescent layer; as well as First floor, Wherein, the light-emitting layer is located between the first electrode and the second electrode, The first layer is located between the first electrode and the light-emitting layer, The light-emitting layer comprises a light-emitting substance and a host material. The first layer comprises a first organic compound, The difference between the HOMO energy level of the first organic compound and the HOMO energy level of the host material is 0.60 eV or less, Furthermore, the first organic compound is an organic compound represented by the following general formula (G1). [Chemical formula 2] (Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom. ) 3. A light emitting device, include: a first electrode; a second electrode; Luminescent layer; First floor; as well as Second layer, Wherein, the light-emitting layer is located between the first electrode and the second electrode, The first layer is located between the first electrode and the light-emitting layer, The second layer is located between the light-emitting layer and the first layer, The light-emitting layer comprises a light-emitting substance and a host material. The first layer comprises a first organic compound, the second layer comprises a second organic compound, The difference between the HOMO energy level of the first organic compound and the HOMO energy level of the host material is 0.60 eV or less, The difference between the HOMO energy level of the first organic compound and the HOMO energy level of the second organic compound is 0.30 eV or less, The first organic compound is an organic compound represented by the following general formula (G1): Furthermore, the second organic compound is a material having a hole transport property. [Chemical formula 3] (Here, in the above general formula (G1), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the above general formula (g1), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), R 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 bonded to each other to form a spiro ring structure. 11 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. Note that R 15 To R 18 Any of represents a bond with a nitrogen atom. ) 4. An organic compound represented by the following general formula (G5). [Chemical formula 4] (Here, in the above general formula (G5), Q is an oxygen atom or a sulfur atom. In addition, B, R 1 To R 8 , R 11 To R 16 , and R 18 To R 31 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. 9 and R 10 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 9 and R 10 Bonded to each other to form a spirocyclic structure.) 5. An organic compound represented by the following structural formula (300). [Chemical formula 5] 6. A light receiving and emitting device, include: Light emitting device; as well as Light receiving device, Wherein, the light emitting device and the light receiving device are located on the same substrate. The light emitting device comprises a first electrode, a second electrode, a light emitting layer and a first layer, The light emitting layer is located between the first electrode and the second electrode. The first layer is located between the first layer and the light-emitting layer, The first layer comprises a first organic compound, The light receiving device comprises a third electrode, a fourth electrode, a light receiving layer and a second layer, The light-receiving layer is located between the third electrode and the fourth electrode. The second layer is located between the third electrode and the light-receiving layer, the second layer comprises the first organic compound, The HOMO energy level of the first organic compound is below -5.40 eV, Furthermore, the first organic compound is an organic compound represented by the following general formula (G10). [Chemical formula 6] (Here, in the general formula (G10), Q is an oxygen atom or a sulfur atom. In addition, one of A and B is a group represented by the general formula (g10), and the other is any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a halogenated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms, and R 1 To R 8 Each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a cyclic saturated hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, a halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. In the general formula (g1), Ar 1 and Ar 2 Each independently represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms. ) 7. A light emitting device, include: The light emitting device according to any one of claims 1 to 3; as well as transistor or substrate.

8. An electronic device, include: The light-emitting device according to claim 7; as well as Detection unit, input unit or communication unit.

9. An electronic device, include: The light-emitting device according to claim 7; as well as Frame.

10. An electronic device, include: The light receiving and emitting device according to claim 6; as well as Detection unit, input unit or communication unit.

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