A deep charging monitoring and suppressing device and method for a conductive slip ring

Abstract

The application provides a kind of electrically conductive slip ring deep charging monitoring and inhibiting device and method, device includes monitoring inhibiting unit and control unit;Monitoring inhibiting unit includes the charge module for obtaining first monitoring signal and transmitting to control unit;For obtaining second monitoring signal and transmitting to control unit, and for heating the temperature unit of second position according to final feedback information;Control unit is used to transmit control signal and final feedback information to monitoring inhibiting unit, for obtaining the charge distribution information of first position according to first monitoring signal to obtain intermediate feedback information according to electric field intensity threshold, for obtaining the current temperature of second position according to second monitoring signal to obtain final feedback information with intermediate feedback information and temperature threshold.The electrically conductive slip ring deep charging monitoring and inhibiting device and method provided by the application can actively inhibit deep charging, reduce the risk of deep discharge, realize small size, light weight, low installation difficulty.

Description

Technical Field

[0001] The present invention relates to the technical field of spacecraft electrical connection insulation, and in particular to a device and method for monitoring and suppressing deep charging of a conductive slip ring. Background Art

[0002] Satellites primarily rely on their solar panels for energy generation. To ensure the panels can track the sun in real time, the conductive slip ring drive mechanism plays a key role, enabling the panels to absorb solar energy with maximum efficiency. However, because the conductive slip ring mechanism is directly exposed to outer space, when it encounters an increase in high-energy electron flow, these electrons can penetrate the aluminum shielding layer and deposit on the insulating baffles and copper rails. Since the insulating baffles are made of polyimide, which has poor conductivity, the accumulated electrons will cause electric field distortion within the insulating layer. Once this distortion exceeds the discharge threshold, it will trigger electrostatic discharge, which in turn causes deep discharge, posing a serious threat to the stable operation of the spacecraft and becoming a potential failure point for the satellite.

[0003] Currently, monitoring methods for deep charging effects in conductive slip rings, both domestically and internationally, focus on dielectric surface potential measurement, PEA electroacoustic pulse measurement of dielectric space charge distribution, and optoelectronic measurement of space charge. While dielectric surface potential measurement can measure the surface potential on the insulating baffles of a conductive slip ring and thus infer deep charging effects, due to the slip ring's overall structure, the potential at the junction of the insulating dielectric, electrodes, and insulating baffles—where the electric field distortion caused by deep charging effects is most severe—cannot be directly measured, resulting in significant detection errors. While PEA acoustic-electrical measurement is relatively low-cost and well-established, it suffers from low resolution and inherently poor signal-to-noise ratio. Furthermore, PEA ultra-low-temperature measurement results are unsatisfactory in the extreme environment of space. Optoelectronic measurement of space charge offers a high signal-to-noise ratio and adaptability to a wide range of environments. However, optoelectronic measurement requires the addition of a target material above the insulating baffle. Currently, ink and aluminum are the target materials of choice for optoelectronic measurement, which increases the risk of surface flashover along the insulating baffle when used in conductive slip rings. Domestic and international efforts to suppress the deep charging effect of conductive slip rings primarily focus on thickening the aluminum shielding layer, adjusting the conductive slip ring structure, and replacing the insulating material. While thickening the aluminum shielding layer can reduce deep charging, it is limited by the weight of the spacecraft, and research has shown that even if the aluminum layer thickness is increased to 3 mm, the discharge threshold may still be reached. Lowering the height of the insulating baffle can reduce the electric field strength to a certain extent, but it may also shorten the creepage distance and increase the risk of discharge. Replacing the insulating material also has limitations, and the introduction of new materials may bring new and unknown risks. These methods are all passive suppression measures, and the electric field distortion will continue for some time after the high-energy electron flow ends. Therefore, how to monitor the deep charging effect of conductive slip rings and more effectively suppress the deep charging phenomenon to ensure the safe operation of spacecraft has become a pressing issue. Summary of the Invention

[0004] In response to the problems existing in the prior art, the present invention provides a conductive slip ring deep charging monitoring and suppression device and method, which can actively suppress deep charging, reduce the risk of deep discharge, and has a small size, lightweight, and low installation difficulty. The device obtains charge distribution information of the insulating baffle through a charge module and obtains the current temperature of the insulating baffle through a temperature module. The control unit calculates and compares the final feedback information with a preset threshold value, and transmits the final feedback information to the temperature module to heat the insulating baffle to improve the conductivity of the insulating baffle and accelerate the release of deposited electrons, thereby suppressing deep charging.

[0005] To achieve the above-mentioned object, the present invention adopts the following technical solutions: a conductive slip ring deep charging monitoring and suppression device, comprising a monitoring and suppression unit and a control unit;

[0006] The monitoring and suppression unit includes a plurality of charge modules and a plurality of temperature modules;

[0007] The charge module is used to obtain a first monitoring signal of a first position on the insulating baffle according to a first control signal, and to transmit the first monitoring signal to the control unit; each charge module corresponds to one first position;

[0008] The temperature module is configured to obtain a second monitoring signal of a second position on the insulating baffle according to a second control signal, transmit the second monitoring signal to the control unit, and heat the second position according to final feedback information from the control unit; each temperature module corresponds to one second position;

[0009] The control unit:

[0010] Used for power supply; used for presetting operating parameters, electric field strength thresholds and temperature thresholds;

[0011] for transmitting the first control signal to the charge module according to the preset operating parameters, and for transmitting the second control signal to the temperature module;

[0012] for receiving the first monitoring signal and obtaining charge distribution information of the first position according to the first monitoring signal;

[0013] for obtaining intermediate feedback information according to the electric field intensity threshold and the charge distribution information of the first position;

[0014] for receiving the second monitoring signal and obtaining the current temperature of the second position according to the second monitoring signal;

[0015] configured to obtain the final feedback information according to the intermediate feedback information, the current temperature of the second position, and the temperature threshold;

[0016] and for transmitting the final feedback information to the temperature module.

[0017] Furthermore, the charge module includes a first piezoelectric ceramic and a second piezoelectric ceramic;

[0018] When in use, the first piezoelectric ceramic is arranged on the outer surface of the first position, and the second piezoelectric ceramic is arranged on the inner surface of the first position;

[0019] The first piezoelectric ceramic and the second piezoelectric ceramic are respectively connected to the control unit;

[0020] The second piezoelectric ceramic is used to transmit a piezoelectric pressure wave pulse signal to the first position according to the first control signal, and the first position is the insulating baffle between the first piezoelectric ceramic and the second piezoelectric ceramic;

[0021] The piezoelectric pressure wave pulse signal is transmitted through the first position and then received by the first piezoelectric ceramic to form the first monitoring signal, which is then transmitted to the control unit by the first piezoelectric ceramic.

[0022] Furthermore, the temperature module includes:

[0023] The sound insulation layer is open at one end and is shell-shaped;

[0024] a third piezoelectric ceramic, which is sealed and disposed at the open end of the sound insulation layer, the third piezoelectric ceramic and the sound insulation layer forming a closed cavity, and the third piezoelectric ceramic is connected to the control unit;

[0025] A damping layer is sealed and filled in the sealed cavity;

[0026] and an acoustic impedance conversion layer, which is laid on the outer surface of the third piezoelectric ceramic and is used to connect to the inner surface of the second position when in use;

[0027] The third piezoelectric ceramic is used to transmit a first ultrasonic signal to the acoustic impedance conversion layer according to the second control signal, and the reflected wave of the first ultrasonic signal after passing through the inner surface of the second position is received by the third piezoelectric ceramic to form the second monitoring signal, and the second monitoring signal is transmitted to the control unit by the third piezoelectric ceramic; the third piezoelectric ceramic is used to transmit a second ultrasonic signal to the acoustic impedance conversion layer according to the final feedback information, and the second ultrasonic signal is used to heat the second position.

[0028] Furthermore, the temperature module also includes a power interface and a signal interface;

[0029] The signal interface is used to receive the second control signal and transmit it to the third piezoelectric ceramic, and is used to transmit the second monitoring signal to the control unit;

[0030] The power supply interface is used to receive the final feedback information and transmit it to the third piezoelectric ceramic.

[0031] Furthermore, the charge module and the temperature module are arranged at intervals.

[0032] Furthermore, several of the temperature modules are independently controlled by the control unit.

[0033] Furthermore, the control unit includes a power supply module, a signal processing module and a temperature control module;

[0034] The signal processing module:

[0035] Used to preset the electric field strength threshold;

[0036] used to receive the first monitoring signal;

[0037] for obtaining charge distribution information of the first position according to the first monitoring signal;

[0038] for obtaining intermediate feedback information based on the electric field strength threshold and the charge distribution information of the first position; the intermediate feedback information is: if the maximum electric field strength at the first position does not exceed the electric field strength threshold, the intermediate feedback information is a negative signal; otherwise, the intermediate feedback information includes a positive signal and the maximum electric field strength at the first position;

[0039] for transmitting the intermediate feedback information to the temperature control module;

[0040] for receiving the second monitoring signal and obtaining the current temperature of the second position according to the second monitoring signal;

[0041] for transmitting the current temperature of the second location to the temperature control module;

[0042] The temperature control module:

[0043] used to preset the temperature threshold;

[0044] Used to receive the intermediate feedback information;

[0045] for receiving the current temperature of the second location;

[0046] for obtaining a heating temperature at the second position according to the intermediate feedback information, the current temperature at the second position, and the temperature threshold;

[0047] for transmitting the heating temperature of the second position to the power module;

[0048] The power module:

[0049] Used for power supply, the power supply module is connected to the signal processing module, the temperature control module and the monitoring and suppression unit respectively;

[0050] Used to preset the operating parameters;

[0051] for transmitting the first control signal to the charge module according to the operating parameter, and for transmitting the second control signal to the temperature module;

[0052] for receiving the heating temperature of the second position, and obtaining the final feedback information according to the heating temperature of the second position;

[0053] Used to transmit the final feedback information to the temperature module.

[0054] A method for monitoring and suppressing deep charge of a conductive slip ring is implemented using the conductive slip ring deep charge monitoring and suppression device, comprising the following steps:

[0055] Obtaining the operating parameters, the electric field strength threshold, and the temperature threshold and inputting them into the control unit;

[0056] The control unit transmits the first control signal to the charge module according to the operating parameter, and the control unit transmits the second control signal to the temperature module according to the operating parameter;

[0057] The charge module obtains a first monitoring signal of the first position on the insulating baffle according to the first control signal, and transmits the first monitoring signal to the control unit;

[0058] The temperature module obtains a second monitoring signal of the second position on the insulating baffle according to the second control signal, and transmits the second monitoring signal to the control unit;

[0059] The control unit receives the first monitoring signal and obtains charge distribution information of the first position according to the first monitoring signal;

[0060] The control unit obtains intermediate feedback information according to the electric field intensity threshold and the charge distribution information of the first position;

[0061] The step of obtaining intermediate feedback information according to the electric field intensity threshold and the charge distribution information at the first position is:

[0062] Obtaining a maximum electric field intensity at the first position according to the charge distribution information at the first position;

[0063] Comparing the maximum electric field strength at the first position with the electric field strength threshold:

[0064] If the maximum electric field strength at the first position does not exceed the electric field strength threshold, the intermediate feedback information is a negative signal;

[0065] otherwise, the intermediate feedback information includes an affirmative signal and the maximum electric field intensity at the first position;

[0066] The control unit receives the second monitoring signal and obtains the current temperature of the second position according to the second monitoring signal;

[0067] The control unit obtains the final feedback information according to the intermediate feedback information, the current temperature of the second position, and the temperature threshold;

[0068] The control unit transmits the final feedback information to the temperature module;

[0069] The temperature module heats the second position according to the final feedback information.

[0070] Furthermore, the step of obtaining the final feedback information according to the intermediate feedback information, the current temperature of the second position and the temperature threshold is:

[0071] Based on the affirmative signal, obtaining a heating temperature at the second position according to the current temperature at the second position, the temperature threshold, and the maximum electric field strength at the first position;

[0072] The final feedback information is obtained according to the heating temperature of the second position.

[0073] Furthermore, the sampling interval of the first control signal is 1 to 2 hours;

[0074] When the temperature module does not receive the final feedback information, the sampling interval of the second control signal is 1 to 2 hours;

[0075] When the temperature module receives the final feedback information, the sampling interval of the second control signal is 15 to 30 minutes.

[0076] Compared with the prior art, the present invention has the following beneficial effects:

[0077] 1. The present invention obtains charge distribution information on the insulating baffle through the charge module and the current temperature of the insulating baffle through the temperature module. The control unit calculates and compares the information with a preset threshold value to obtain final feedback information, which is then transmitted to the temperature module to heat the insulating baffle. This increases the conductivity of the insulating baffle, accelerates the release of deposited electrons, and thus suppresses deep charging.

[0078] 2. The temperature module in this invention integrates temperature measurement and heating functions, providing uniform heating, precise temperature control, and streamlined equipment. Combined with the charge module and control unit, it actively suppresses deep charging, significantly reducing the risk of deep discharge.

[0079] 3. The control unit of the present invention is integrated with power electronic devices, and the monitoring and suppression unit can also be realized by a small probe, which achieves small size and light weight, reducing the overall installation difficulty. BRIEF DESCRIPTION OF THE DRAWINGS

[0080] Figure 1 It is a structural schematic diagram of the present invention;

[0081] Figure 2 Schematic diagram of the installation position of the monitoring and suppression unit on the conductive slip ring in the present invention;

[0082] Figure 3 Schematic diagram of the structure of the temperature module in the present invention;

[0083] Figure 4 Schematic diagram of the principle of the conductive slip ring deep charging monitoring and suppression method of the present invention.

[0084] Among them, the figures are marked as follows: 1. conductive slip ring; 11. insulating baffle; 12. copper slide; 13. cavity; 2. monitoring and suppression unit; 21. charge module; 211. first piezoelectric ceramic; 212. second piezoelectric ceramic; 22. temperature module; 221. acoustic impedance conversion layer; 222. third piezoelectric ceramic; 223. sound insulation layer; 224. damping layer; 225. power interface; 226. signal interface; 3. control unit; 31. power module; 32. signal processing module; 33. temperature control module. DETAILED DESCRIPTION

[0085] It is worth noting that the methods used in the present invention are all conventional methods unless otherwise specified; the raw materials and devices used are all conventional commercially available products, and their sources are not specifically limited unless otherwise specified.

[0086] A conductive slip ring deep charging monitoring and suppression device, comprising a monitoring and suppression unit 2 and a control unit 3;

[0087] The monitoring and suppression unit 2 includes a plurality of charge modules 21 and a plurality of temperature modules 22;

[0088] Charge module 21: used to obtain a first monitoring signal at a first position on the insulating baffle 11 based on a first control signal, and to transmit the first monitoring signal to the control unit 3; each charge module 21 corresponds to a first position, where the charge module 21 is installed on the insulating baffle 11; the charge module 21 is used to monitor the deep charging effect at the first position on the insulating baffle 11;

[0089] Temperature module 22: used to obtain a second monitoring signal from a second position on the insulating baffle 11 based on the second control signal, transmit the second monitoring signal to the control unit 3, and heat the second position based on the final feedback information from the control unit 3; each temperature module 22 corresponds to a second position, and the second position is the location where the temperature module 22 is installed on the insulating baffle 11;

[0090] The charge module 21 and the temperature module 22 are arranged at intervals; several temperature modules 22 are independently controlled by the control unit 3, and the temperature modules 22 within a preset distance interval around the charge module 21 are associated with the charge module 21. The preset distance interval includes at least one temperature module 22, that is, each charge module 21 corresponds to a first position, each temperature module 22 corresponds to a second position, and the first position is associated with at least one second position.

[0091] See also Figure 1 、 2 The conductive slip ring 1 includes an insulating baffle 11 and a copper slide 12. The insulating baffle 11 is hollow and cylindrical, and a cavity 13 is provided in the insulating baffle 11. Grooves are provided on the outer surfaces of both axial ends of the insulating baffle 11, and the copper slide 12 is installed in the grooves. The grooves are annular, and the axial outer end surface of the insulating baffle 11 is an annular protrusion. The first position and the second position are both arranged on the annular protrusion. Charge modules 21 are evenly arranged along the circumference of each annular protrusion. Temperature modules 22 are arranged around the charge modules 21 within a preset distance interval, that is, each charge module 21 corresponds to a temperature module 22 within the surrounding preset distance interval. The same temperature module 22 corresponds to at least one charge module 21. When the deep charging effect at the first position exceeds the electric field strength threshold, the temperature module 22 associated with the charge module 21 at the first position heats the corresponding second position according to the feedback signal, so that the entire area around the first position is evenly heated, thereby improving the conductivity of the insulating baffle 11 and achieving a precise and rapid increase in the temperature of the insulating baffle 11.

[0092] Control Unit 3:

[0093] Used for power supply; used for presetting operating parameters, electric field strength threshold and temperature threshold, where both the electric field strength threshold and the temperature threshold are preset thresholds;

[0094] Used to transmit a first control signal to the charge module 21 according to preset operating parameters, and used to transmit a second control signal to the temperature module 22; the first control signal and the second control signal are both control signals;

[0095] Used to receive a first monitoring signal and obtain charge distribution information at a first position according to the first monitoring signal;

[0096] Used to obtain intermediate feedback information according to the electric field intensity threshold and the charge distribution information at the first position;

[0097] Used to receive a second monitoring signal and obtain a current temperature of a second location according to the second monitoring signal;

[0098] for obtaining final feedback information according to the intermediate feedback information, the current temperature of the second position, and a temperature threshold;

[0099] And used to transmit the final feedback information to the temperature module 22.

[0100] First, the operating parameters, electric field strength threshold and temperature threshold are preset in the control unit 3. The operating parameters include the sampling frequency, voltage and other parameters of the first control signal and the second control signal. During actual operation, the control unit 3 transmits the first control signal to the charge module 21 and the second control signal to the temperature module 22 according to the operating parameters. The charge module 21 obtains the first monitoring signal of the first position on the insulating baffle 11 according to the first control signal, and transmits the first monitoring signal to the control unit 3. The temperature module 22 obtains the second monitoring signal of the second position on the insulating baffle 11 according to the second control signal, and transmits the second monitoring signal to the control unit 3; the control unit 3 receives the first monitoring signal and obtains the charge distribution information of the first position according to the first monitoring signal; the control unit 3 obtains the intermediate feedback information according to the electric field strength threshold and the charge distribution information of the first position, that is, the maximum electric field strength of the first position is obtained according to the charge distribution information of the first position. degree, and compares the maximum electric field strength at the first position with the electric field strength threshold: if the maximum electric field strength at the first position does not exceed the electric field strength threshold, that is, the deep charging effect at the first position does not exceed the electric field strength threshold, then the intermediate feedback information is a negative signal; otherwise, that is, the deep charging effect at the first position exceeds the electric field strength threshold, then the intermediate feedback information includes a positive signal and the maximum electric field strength at the first position; the control unit 3 receives the second monitoring signal and obtains the current temperature of the second position according to the second monitoring signal; the control unit 3 obtains the final feedback information according to the intermediate feedback information, the current temperature of the second position and the temperature threshold, that is, based on the positive signal, the final feedback information is obtained according to the current temperature of the second position, the temperature threshold and the maximum electric field strength of the first position, and the final feedback information is obtained according to the heating temperature of the second position; the control unit 3 transmits the final feedback information to the temperature module 22; the temperature module 22 heats the second position according to the final feedback information.

[0101] When the charge distribution information of the first position is compared with the electric field strength threshold to generate a negative signal, there is no need to heat the second position associated with the first position;

[0102] When the charge distribution information of the first position is compared with the electric field strength threshold to generate a positive signal, the second position associated with the first position is heated according to the final feedback information. When the deep charging effect of the first position reaches the preset electric field strength threshold, the temperature module 22 heats the second position associated with the first position, so that the area around the first position is evenly heated to increase the conductivity of the first position of the insulating baffle 11, accelerate the release of deposited electrons, and thus suppress deep charging.

[0103] The charge module 21 includes a first piezoelectric ceramic 211 and a second piezoelectric ceramic 212;

[0104] During use, the first piezoelectric ceramic 211 is arranged on the outer surface of the first position, and the second piezoelectric ceramic 212 is arranged on the inner surface of the first position, and is used to monitor the charge distribution at the first position in the insulating baffle 11. It has a higher resolution in three-dimensional charge measurement and can better monitor the deep charging of the conductive slip ring. Under low temperature conditions, the piezoelectric pressure wave measurement effect is good and adapts to the extreme environment of space. Preferably, the charge module 21 measures the charge distribution at the first position based on the piezoelectric pressure wave (PIPWP) method. The power supply module 31 in the control unit 3 generates a series of high-speed square wave electric pulses according to the operating parameters to drive the second piezoelectric ceramic 212, so that the second piezoelectric ceramic 212 generates a piezoelectric pressure wave pulse signal to act on the first position, causing a slight displacement of the space charge in the insulating baffle 11 at the first position, thereby causing the induced charge of the first piezoelectric ceramic 211 to change, thereby forming a first monitoring signal.

[0105] The first piezoelectric ceramic 211 and the second piezoelectric ceramic 212 are respectively connected to the control unit 3;

[0106] The second piezoelectric ceramic 212 is used to transmit a piezoelectric pressure wave pulse signal to a first position according to a first control signal. The first position is the insulating baffle 11 between the first piezoelectric ceramic 211 and the second piezoelectric ceramic 212. The second piezoelectric ceramic 212 serves as a transmitter of the piezoelectric pressure wave pulse signal. Under the action of the first control signal, the second piezoelectric ceramic 212 generates a piezoelectric pressure wave pulse signal and injects it into the measured medium, i.e., the first position.

[0107] After the piezoelectric pressure wave pulse signal propagates through the first position, it is received by the first piezoelectric ceramic 211 to form a first monitoring signal. The first monitoring signal is transmitted by the first piezoelectric ceramic 211 to the control unit 3. The first piezoelectric ceramic 211 is the receiving end of the piezoelectric pressure wave pulse signal. It captures the signal changes after propagation through the measured medium at the first position, that is, forms the first monitoring signal, and transmits it back to the control unit 3. The control unit 3 calculates the charge distribution information at the first position.

[0108] In addition, the charge module 21 may also be a capacitive sensor or a potential probe, which is a prior art and will not be described in detail here.

[0109] See also Figure 3 The temperature module 22 is an electroacoustic transducer, and the temperature module 22 includes:

[0110] The sound insulation layer 223 has an open end and is in a shell shape, and is used to absorb and isolate external sound waves, reduce signal interference, and protect the third piezoelectric ceramic 222. Preferably, the sound insulation layer 223 is made of rubber;

[0111] The third piezoelectric ceramic 222 is sealed at the open end of the sound insulation layer 223. The third piezoelectric ceramic 222 and the sound insulation layer 223 form a closed cavity. The third piezoelectric ceramic 222 is connected to the control unit 3.

[0112] The damping layer 224 is sealed and filled in the sealed cavity. The damping layer 224 is made of a mixed material such as epoxy resin and tungsten powder, and is used to absorb ultrasonic waves on the back of the third piezoelectric ceramic 222 to reduce noise.

[0113] and an acoustic impedance conversion layer 221, which is laid on the outer surface of the third piezoelectric ceramic 222 and is used to connect to the inner surface of the second position when in use. Preferably, the acoustic impedance conversion layer 221 is made of open-cell polyurethane foam to reduce reflection and scattering of sound waves and improve the efficiency of sound wave transmission;

[0114] The third piezoelectric ceramic 222 is used to transmit a first ultrasonic signal to the acoustic impedance conversion layer 221 according to the second control signal. The reflected wave of the first ultrasonic signal after passing through the inner surface of the second position is received by the third piezoelectric ceramic 222 to form a second monitoring signal. The second monitoring signal formed by the first ultrasonic signal is used to obtain the real-time temperature of the second position. The second monitoring signal is transmitted to the control unit 3 by the third piezoelectric ceramic 222; the third piezoelectric ceramic 222 is used to transmit a second ultrasonic signal to the acoustic impedance conversion layer 221 according to the final feedback information. The second ultrasonic signal is used to heat the second position. Ultrasonic heating is used to ensure uniform heating and rapid temperature increase.

[0115] The most direct effect of the second ultrasonic signal is to heat the second position. Due to the absorption of the second position, the sound energy of the second ultrasonic signal is reduced, and part of the reduced sound energy is converted into heat and remains at the second position of the insulating baffle 11 to heat the insulating baffle 11 and achieve temperature rise. The temperature rise rate of the insulating baffle 11 at the second position is formula one, and formula one is:

[0116]

[0117] In the formula, is the temperature rise rate, is the sound absorption coefficient, which is a function of the sound wave frequency f (MHz) and can be approximately expressed as , is the second ultrasonic wave intensity of the measured second position, and the unit is , is the average density of the measured medium (at the second position of the insulating baffle), and the unit is , is the specific heat capacity of the measured medium (at the second position of the insulating baffle) under a certain pressure, and the unit is ℃;

[0118] According to the Arrhenius conductivity-temperature model, the relationship between the conductivity of polyimide and temperature is expressed as formula two, and formula two is:

[0119]

[0120] In the formula, is the conductivity, is the temperature, is the Boltzmann constant, is the activation energy of the measured medium (at the second position of the insulating baffle), is a constant related to the measured medium (at the second position of the insulating baffle).

[0121] According to the above formula one and formula two, when the temperature of the insulating baffle increases from 0 to 80℃, the conductivity increases by two orders of magnitude at most, and the maximum electric field distortion degree of the high-energy electron radiation of the conductive slip ring also decreases by two orders of magnitude. Therefore, the maximum temperature of the insulating baffle 11 after heating by the temperature module 22 is 80℃, and the preset value of the temperature threshold is 80℃.

[0122] In addition, the temperature module 22 can also be a thermocouple temperature measurement and heating integrated device or an optical temperature measurement and heating integrated device, which is a prior art and will not be described here.

[0123] The temperature module 22 further comprises a power interface 225 and a signal interface 226;

[0124] The signal interface 226 is used to receive the second control signal and transmit it to the third piezoelectric ceramic 222 , and to transmit the second monitoring signal to the control unit 3 ;

[0125] The power interface 225 is used to receive the final feedback information and transmit it to the third piezoelectric ceramic 222 .

[0126] The control unit 3 includes a power supply module 31, a signal processing module 32 and a temperature control module 33;

[0127] Signal processing module 32:

[0128] Used to preset the electric field strength threshold;

[0129] Used to receive a first monitoring signal;

[0130] for obtaining charge distribution information at a first position according to a first monitoring signal;

[0131] Used to obtain intermediate feedback information according to the electric field intensity threshold and the charge distribution information at the first position;

[0132] Used to transmit the intermediate feedback information to the temperature control module 33;

[0133] Used to receive a second monitoring signal and obtain a current temperature of a second location according to the second monitoring signal;

[0134] for transmitting the current temperature of the second position to the temperature control module 33;

[0135] Temperature control module 33:

[0136] Used to preset temperature thresholds;

[0137] Used to receive the intermediate feedback information;

[0138] for receiving a current temperature at a second location;

[0139] for obtaining a heating temperature at the second position according to the intermediate feedback information, the current temperature at the second position, and a temperature threshold;

[0140] for transmitting the heating temperature of the second position to the power module 31;

[0141] Power module 31:

[0142] For power supply, the power supply module 31 is connected to the signal processing module 32, the temperature control module 33 and the monitoring and suppression unit 2 respectively;

[0143] Used to preset operating parameters;

[0144] for transmitting a first control signal to the charge module 21 according to the operating parameters, and for transmitting a second control signal to the temperature module 22;

[0145] Used to receive the heating temperature of the second position and obtain final feedback information according to the heating temperature of the second position;

[0146] Used to transmit the final feedback information to the temperature module 22.

[0147] The power supply module 31 , the signal processing module 32 and the temperature control module 33 are integrated together using power electronic devices to achieve a small size and light weight, thereby reducing the overall installation difficulty.

[0148] Preferably, the power module 31 is connected to the solar panels.

[0149] A method for monitoring and suppressing deep charge of a conductive slip ring is implemented using a device for monitoring and suppressing deep charge of a conductive slip ring, and includes the following steps:

[0150] Obtaining operating parameters, electric field strength thresholds, and temperature thresholds and inputting them into the control unit 3;

[0151] The control unit 3 transmits a first control signal to the charge module 21 according to the operating parameters, and the control unit 3 transmits a second control signal to the temperature module 22 according to the operating parameters;

[0152] The charge module 21 obtains a first monitoring signal of a first position on the insulating baffle 11 according to the first control signal, and transmits the first monitoring signal to the control unit 3;

[0153] The temperature module 22 obtains a second monitoring signal of a second position on the insulating baffle 11 according to the second control signal, and transmits the second monitoring signal to the control unit 3;

[0154] The control unit 3 receives the first monitoring signal and obtains charge distribution information of the first position according to the first monitoring signal;

[0155] The control unit 3 obtains intermediate feedback information according to the electric field intensity threshold and the charge distribution information at the first position;

[0156] The control unit 3 receives the second monitoring signal and obtains the current temperature of the second position according to the second monitoring signal;

[0157] The control unit 3 obtains final feedback information according to the intermediate feedback information, the current temperature of the second position and the temperature threshold;

[0158] The control unit 3 transmits the final feedback information to the temperature module 22;

[0159] The temperature module 22 heats the second position according to the final feedback information.

[0160] Furthermore, the step of obtaining the final feedback information according to the intermediate feedback information, the current temperature of the second position and the temperature threshold is:

[0161] Based on the affirmative signal, the final feedback information is obtained according to the current temperature of the second position, the temperature threshold and the maximum electric field strength of the first position. The final feedback information is the heating temperature of the second position. The required power is transmitted from the power module 31 to the temperature module 22 according to the final feedback information.

[0162] Furthermore, the sampling interval of the first control signal is 1 to 2 hours, preferably 1 hour;

[0163] When the temperature module 22 does not receive the final feedback information, the sampling interval of the second control signal is 1 to 2 hours, preferably 1 hour;

[0164] When the temperature module 22 receives the final feedback information, the sampling interval of the second control signal is 15 to 30 minutes, preferably 15 minutes, and the power transmitted to the temperature module 22 is adjusted in real time to accurately control the temperature of the insulating baffle and significantly reduce the risk of deep discharge.

[0165] Finally, it should be noted that the above content is only used to illustrate the technical solution of the present invention, rather than to limit the scope of protection of the present invention. Simple modifications or equivalent substitutions of the technical solution of the present invention by ordinary technicians in this field do not deviate from the essence and scope of the technical solution of the present invention.

Claims

1. A conductive slip ring deep charging monitoring and suppression device, characterized in that: It includes a monitoring and suppression unit and a control unit; The monitoring and suppression unit includes a plurality of charge modules and a plurality of temperature modules; The charge module is used to obtain a first monitoring signal of a first position on the insulating baffle according to a first control signal, and to transmit the first monitoring signal to the control unit; each charge module corresponds to one first position; The temperature module is configured to obtain a second monitoring signal of a second position on the insulating baffle according to a second control signal, transmit the second monitoring signal to the control unit, and heat the second position according to final feedback information from the control unit; each temperature module corresponds to one second position; The control unit: For power supply; Used to preset operating parameters, electric field strength thresholds and temperature thresholds; for transmitting the first control signal to the charge module according to the preset operating parameters, and for transmitting the second control signal to the temperature module; for receiving the first monitoring signal and obtaining charge distribution information of the first position according to the first monitoring signal; for obtaining intermediate feedback information based on the electric field strength threshold and the charge distribution information of the first position; the intermediate feedback information is: if the maximum electric field strength at the first position does not exceed the electric field strength threshold, the intermediate feedback information is a negative signal; otherwise, the intermediate feedback information includes a positive signal and the maximum electric field strength at the first position; for receiving the second monitoring signal and obtaining the current temperature of the second position according to the second monitoring signal; configured to obtain the final feedback information according to the intermediate feedback information, the current temperature of the second position, and the temperature threshold; and for transmitting the final feedback information to the temperature module.

2. The conductive slip ring deep charging monitoring and suppression device according to claim 1, characterized in that: The charge module includes a first piezoelectric ceramic and a second piezoelectric ceramic; When in use, the first piezoelectric ceramic is arranged on the outer surface of the first position, and the second piezoelectric ceramic is arranged on the inner surface of the first position; The first piezoelectric ceramic and the second piezoelectric ceramic are respectively connected to the control unit; The second piezoelectric ceramic is used to transmit a piezoelectric pressure wave pulse signal to the first position according to the first control signal, and the first position is the insulating baffle between the first piezoelectric ceramic and the second piezoelectric ceramic; The piezoelectric pressure wave pulse signal is transmitted through the first position and then received by the first piezoelectric ceramic to form the first monitoring signal, which is then transmitted to the control unit by the first piezoelectric ceramic.

3. The conductive slip ring deep charging monitoring and suppression device according to claim 1, characterized in that: The temperature module includes: The sound insulation layer is open at one end and is shell-shaped; a third piezoelectric ceramic, which is sealed and disposed at the open end of the sound insulation layer, the third piezoelectric ceramic and the sound insulation layer forming a closed cavity, and the third piezoelectric ceramic is connected to the control unit; A damping layer is sealed and filled in the sealed cavity; and an acoustic impedance conversion layer, which is laid on the outer surface of the third piezoelectric ceramic and is used to connect to the inner surface of the second position when in use; The third piezoelectric ceramic is used to transmit a first ultrasonic signal to the acoustic impedance conversion layer according to the second control signal, and the reflected wave of the first ultrasonic signal after passing through the inner surface of the second position is received by the third piezoelectric ceramic to form the second monitoring signal, and the second monitoring signal is transmitted to the control unit by the third piezoelectric ceramic; the third piezoelectric ceramic is used to transmit a second ultrasonic signal to the acoustic impedance conversion layer according to the final feedback information, and the second ultrasonic signal is used to heat the second position.

4. The conductive slip ring deep charging monitoring and suppression device according to claim 3, characterized in that: The temperature module also includes a power interface and a signal interface; The signal interface is used to receive the second control signal and transmit it to the third piezoelectric ceramic, and is used to transmit the second monitoring signal to the control unit; The power supply interface is used to receive the final feedback information and transmit it to the third piezoelectric ceramic.

5. The conductive slip ring deep charging monitoring and suppression device according to claim 1, characterized in that: The charge module and the temperature module are arranged at intervals.

6. The conductive slip ring deep charging monitoring and suppression device according to claim 1, characterized in that: The plurality of temperature modules are independently controlled by the control unit.

7. The conductive slip ring deep charging monitoring and suppression device according to claim 1, characterized in that: The control unit includes a power supply module, a signal processing module and a temperature control module; The signal processing module: Used to preset the electric field strength threshold; used to receive the first monitoring signal; for obtaining charge distribution information of the first position according to the first monitoring signal; for obtaining intermediate feedback information according to the electric field intensity threshold and the charge distribution information of the first position; for transmitting the intermediate feedback information to the temperature control module; for receiving the second monitoring signal and obtaining the current temperature of the second position according to the second monitoring signal; for transmitting the current temperature of the second location to the temperature control module; The temperature control module: used to preset the temperature threshold; Used to receive the intermediate feedback information; for receiving the current temperature of the second location; for obtaining a heating temperature at the second position according to the intermediate feedback information, the current temperature at the second position, and the temperature threshold; for transmitting the heating temperature of the second position to the power module; The power module: Used for power supply, the power supply module is connected to the signal processing module, the temperature control module and the monitoring and suppression unit respectively; Used to preset the operating parameters; for transmitting the first control signal to the charge module according to the operating parameter, and for transmitting the second control signal to the temperature module; for receiving the heating temperature of the second position and obtaining the final feedback information according to the heating temperature of the second position; Used to transmit the final feedback information to the temperature module.

8. A method for monitoring and suppressing deep charge of a conductive slip ring, implemented by using the device for monitoring and suppressing deep charge of a conductive slip ring according to any one of claims 1 to 7, characterized in that: The following steps are involved: Obtaining the operating parameters, the electric field strength threshold, and the temperature threshold and inputting them into the control unit; The control unit transmits the first control signal to the charge module according to the operating parameter, and the control unit transmits the second control signal to the temperature module according to the operating parameter; The charge module obtains a first monitoring signal of the first position on the insulating baffle according to the first control signal, and transmits the first monitoring signal to the control unit; The temperature module obtains a second monitoring signal of the second position on the insulating baffle according to the second control signal, and transmits the second monitoring signal to the control unit; The control unit receives the first monitoring signal and obtains charge distribution information of the first position according to the first monitoring signal; The control unit obtains intermediate feedback information according to the electric field intensity threshold and the charge distribution information of the first position; The step of obtaining intermediate feedback information according to the electric field intensity threshold and the charge distribution information at the first position is: Obtaining a maximum electric field intensity at the first position according to the charge distribution information at the first position; Comparing the maximum electric field strength at the first position with the electric field strength threshold: If the maximum electric field strength at the first position does not exceed the electric field strength threshold, the intermediate feedback information is a negative signal; otherwise, the intermediate feedback information includes an affirmative signal and the maximum electric field intensity at the first position; The control unit receives the second monitoring signal and obtains the current temperature of the second position according to the second monitoring signal; The control unit obtains the final feedback information according to the intermediate feedback information, the current temperature of the second position, and the temperature threshold; The control unit transmits the final feedback information to the temperature module; The temperature module heats the second position according to the final feedback information.

9. The method for monitoring and suppressing deep charging of a conductive slip ring according to claim 8, characterized in that: The step of obtaining the final feedback information according to the intermediate feedback information, the current temperature of the second position and the temperature threshold is: Based on the affirmative signal, obtaining a heating temperature at the second position according to the current temperature at the second position, the temperature threshold, and the maximum electric field strength at the first position; The final feedback information is obtained according to the heating temperature of the second position.

10. The method for monitoring and suppressing deep charging of a conductive slip ring according to claim 8 or 9, characterized in that: The sampling interval of the first control signal is 1~2h; When the temperature module does not receive the final feedback information, the sampling interval of the second control signal is 1 to 2 hours; When the temperature module receives the final feedback information, the sampling interval of the second control signal is 15 to 30 minutes.

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