Back-to-back heat absorption laser device and output method

Abstract

The invention relates to the field of laser technology, and provides a back-to-back heat-absorbing laser device and an output method. A local oscillator-level optical path and an amplifying-level optical path are respectively arranged on the two side surfaces of a phase change material heat sink, the local oscillator-level optical path is arranged on the upper surface of the phase change material heat sink, and the amplifying-level optical path is arranged on the lower surface of the phase change material heat sink. Two polarizing prisms are arranged to realize the optical path connection between the local oscillator-level optical path and the amplifying-level optical path, wherein the two polarizing prisms are respectively arranged at the exit end of the local oscillator-level optical path and the incident end of the amplifying-level optical path to form a three-dimensional sandwich optical path. The phase change material heat sink simultaneously realizes heat absorption heat dissipation for the local oscillator-level optical path and the amplifying-level optical path, thereby realizing a high-energy all-solid-state laser that can be quickly started, has a novel structure, strong environmental adaptability, and outputs laser rapidly while ensuring output performance.

Description

Technical Field

[0001] The present invention generally relates to the field of laser technology, and in particular to a back-to-back heat absorption laser device and an output method. Background Art

[0002] Laser diode (LD) array pumped solid-state laser (DPSSL) has become one of the main development directions in the field of solid-state lasers due to its advantages such as high efficiency, compact structure, stability and reliability, long life and full solidification.

[0003] The present invention adopts a pumping structure of a single-side pumped Nd YAG crystal, uses a stacked LD array as a pumping source to improve the light focusing efficiency, reasonably designs the light focusing cavity structure and related parameters, improves the gain uniformity in the crystal rod, and obtains high-efficiency, high-beam quality laser output.

[0004] Thermal effect is one of the unavoidable problems when all-solid-state lasers are working normally. The LD stack will release a large amount of heat after being powered on. When a large amount of heat accumulates inside the laser, high-temperature loss is very likely to occur, causing optical catastrophe of the laser and even irreversible damage.

[0005] The conduction cooling system is one of the commonly used heat dissipation methods for all-solid-state lasers. This method does not require a complex temperature control system, does not increase the size and power consumption of the laser, and is conducive to miniaturization and field operation. However, due to material limitations and space waste, traditional laser conduction cooling radiators can no longer meet the needs of increasingly complex use environments. Therefore, it is necessary to carry out a new structural design for intermittent all-solid-state lasers, and there is an urgent need for a technical means suitable for handling internal heat deposition in such non-water-cooled all-solid-state lasers. Summary of the invention

[0006] Refer to the following Figures 1 to 5 A back-to-back heat absorption laser device provided by an embodiment of the present invention is described.

[0007] The present invention proposes a back-to-back heat absorption laser device, such as Figure 1 As shown, it includes a local oscillator-level optical path, an amplifier-level optical path and a phase change material heat sink, wherein the local oscillator-level optical path and the amplifier-level optical path are respectively arranged on the two side surfaces of the phase change material heat sink, the local oscillator-level optical path is arranged on the upper surface of the phase change material heat sink, and the amplifier-level optical path is arranged on the lower surface of the phase change material heat sink, and the phase change material heat sink includes a thermal phase change material inside, and the phase change material heat sink simultaneously realizes heat absorption for the local oscillator-level optical path and the amplifier-level optical path; wherein,

[0008] like Figure 2The figure shows the structure of the local oscillation level optical path, wherein the local oscillation level optical path is sequentially provided with a first total reflection mirror 1, a polarizer 2, a polarizer base 3, a first local oscillation level crystal first bracket 4, a first local oscillation level crystal 5, a first condenser 6, a first conduction-cooled stacked array semiconductor laser 7, a first local oscillation level crystal second bracket 8, a second local oscillation level crystal first bracket 9, a second condenser 10, a second conduction-cooled stacked array semiconductor laser 11, a third conduction-cooled stacked array semiconductor laser 12, a second local oscillation level crystal 13, and a second local oscillation level crystal second bracket 1 4. a first reflecting mirror 15, a first polarizing prism 29, a first λ / 4 wave plate 16, a first bracket 27 for a third local oscillator-level crystal, a fourth conductively-cooled stacked semiconductor laser 26, a fifth conductively-cooled stacked semiconductor laser 25, a third condenser 24, a second bracket 23 for a third local oscillator-level crystal, a sixth conductively-cooled stacked semiconductor laser 22, a fourth condenser 21, a seventh conductively-cooled stacked semiconductor laser 20, a third local oscillator-level crystal 19, a third bracket 18 for a third local oscillator-level crystal, a second total reflection mirror 17, and a second reflecting mirror 30.

[0009] like Figure 3 The figure shows the structure of the optical path of the amplifier stage, wherein the optical path of the amplifier stage is provided with a second polarizing prism 31, a first bracket 32 ​​of the first amplifier stage crystal, an eighth conductively cooled stacked array semiconductor laser 33, a ninth conductively cooled stacked array semiconductor laser 34, a fifth condenser 35, a second bracket 36 of the first amplifier stage crystal, a sixth condenser 37, a tenth conductively cooled stacked array semiconductor laser 38, an eleventh conductively cooled stacked array semiconductor laser 39, a third bracket 40 of the first amplifier stage crystal, a first amplifier stage crystal 41, a third reflector 42, a second λ / 4 wave plate 43, a fourth reflector 44, a second amplifier stage crystal 45, a first bracket 46 of the second amplifier stage crystal, a twelfth conductively cooled stacked array semiconductor laser 47, a seventh condenser 48, a thirteenth conductively cooled stacked array semiconductor laser 49, a second bracket 50 of the second amplifier stage crystal, an eighth condenser 51, a fourteenth conductively cooled stacked array semiconductor laser 52, a fifteenth conductively cooled stacked array semiconductor laser 53, a third bracket 54 of the second amplifier stage crystal, and a third total reflection mirror 55.

[0010] Preferably, the polarizer 2 is used to generate horizontal linear polarized light.

[0011] Preferably, the first local oscillator crystal 5 is a Nd:YAG round rod with a diameter of 4 mm and a length of 21 mm. 3+ The ion doping concentration is 1%. The side of the crystal rod of the first local oscillator level crystal 5 is usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end faces of the crystal rod of the first local oscillator level crystal 5 are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser.

[0012] Preferably, the second local oscillation crystal 13 is a Nd:YAG round rod with a diameter of 4 mm and a length of 36 mm. 3+ The ion doping concentration is 1%. The side surfaces of the crystal rod of the second local oscillation stage crystal 13 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The crystal rod of the second local oscillation stage crystal 13 is polished on both ends and coated with a 1064 nm anti-reflection film, and is used as a gain medium for generating 1064 nm laser.

[0013] Preferably, the third local oscillator crystal 19 is a Nd:YAG round rod with a diameter of 4 mm and a length of 68 mm. 3+ The ion doping concentration is 1%. The side surfaces of the crystal rod of the third local oscillation level crystal 19 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end surfaces of the crystal rod of the third local oscillation level crystal 19 are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser.

[0014] Preferably, the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are Nd:YAG round rods with a diameter of 6 mm and a length of 70 mm. 3+ The ion doping concentration is 1%. The sides of the crystal rods of the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end surfaces of the crystal rods of the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are polished and coated with a 1064 nm anti-reflection film, and are used as gain media for generating 1064 nm amplified lasers.

[0015] Preferably, Figure 4 The schematic diagram of the structure of the focusing cavity of the local oscillator optical path of a back-to-back heat absorption laser device is shown. The focusing cavity of the local oscillator optical path is composed of the first local oscillator crystal 5, the first concentrator 6, and the first conduction-cooled stacked array semiconductor laser 7. The two end faces of the first local oscillator crystal 5 are bonded to the grooves of the first bracket 4 of the first local oscillator crystal and the second bracket 8 of the first local oscillator crystal by silver-filled epoxy resin adhesive. The first concentrator 6 is installed on the first bracket 4 of the first local oscillator crystal and the second bracket 8 of the first local oscillator crystal. The pump light emitted by the first conduction-cooled stacked array semiconductor laser 7 is reflected on the inner surface of the first concentrator 6, and a uniform light field is formed in the first concentrator 6, thereby improving the uniformity of the pumping and further improving the quality of the laser beam output by the laser device.

[0016] Preferably, the first concentrator 6 is an arc structure with an arc length of 32 mm and a length of 13 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, and is used to reflect 808 nm pump light to the surface of the first local oscillation stage crystal 5.

[0017] Preferably, the second concentrator 10 is an arc structure with an arc length of 32 mm and a length of 29 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, and is used to reflect 808 nm pump light to the surface of the second local oscillation stage crystal 13.

[0018] Preferably, the third concentrator 24 and the fourth concentrator 21 are arc structures with an arc length of 32 mm and a length of 29 mm. They are made of copper, and their inner surfaces are polished and plated with a high-reflection optical silver coating, which are used to reflect 808 nm pump light to the surface of the third local oscillation level crystal 19.

[0019] Preferably, the fifth concentrator 35 and the sixth concentrator 37 are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, and their inner surfaces are polished and plated with a high-reflection optical silver coating, which are used to reflect 808 nm pump light to the surface of the first amplifier stage crystal 41.

[0020] Preferably, the seventh concentrator 48 and the eighth concentrator 51 are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, have a polished surface and are plated with a high-reflection optical silver coating, and are used to reflect 808 nm pump light to the surface of the second amplifier stage crystal 45.

[0021] Preferably, the output wavelength of the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 is 808 nm, and is used as a local oscillator-level optical path pump source.

[0022] Preferably, the output wavelength of the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 is 808 nm, and is used as a pump source for the amplifier stage optical path.

[0023] Preferably, the first bracket 4 of the first local oscillation level crystal, the second bracket 8 of the first local oscillation level crystal, the first bracket 9 of the second local oscillation level crystal, the second bracket 14 of the second local oscillation level crystal, the first bracket 27 of the third local oscillation level crystal, the second bracket 23 of the third local oscillation level crystal, the third bracket 18 of the third local oscillation level crystal, the first bracket 32 ​​of the first amplifying level crystal, the second bracket 36 of the first amplifying level crystal, the third bracket 40 of the first amplifying level crystal, the first bracket 46 of the second amplifying level crystal, the second bracket 50 of the second amplifying level crystal, and the third bracket 54 of the second amplifying level crystal are made of high thermal conductivity materials such as copper, and the surface is polished.

[0024] Preferably, Figure 5 The figure shows a schematic diagram of the phase change material heat sink structure of a back-to-back heat absorption laser device. The phase change material heat sink 28 is made of a material with high thermal conductivity such as copper, and the upper and lower sides are used to fix the local oscillation optical path and the amplification optical path; the thermal phase change material 56 is a liquid gallium indium tin alloy, and the thermal phase change material 56 is filled in the rectangular parallelepiped groove inside the phase change material heat sink 28 and sealed.

[0025] The first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 are fixed on the upper surface of the phase-change material heat sink 28, and the contact surfaces between the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 and the phase-change material heat sink 28 are filled with thermally conductive silicone grease to improve thermal conductivity efficiency.

[0026] The eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 are fixed on the lower surface of the phase-change material heat sink 28, and the contact surfaces between the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 and the phase-change material heat sink 28 are filled with thermally conductive silicone grease to improve thermal conductivity.

[0027] Preferably, an output method using any of the above-mentioned back-to-back endothermic laser devices is also provided, the method comprising:

[0028] turning on the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, the seventh conductively-cooled stacked semiconductor laser 20, the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 to emit pump light;

[0029] The pump light passes through the first condenser 6, the second condenser 10, the third condenser 24, the fourth condenser 21, the fifth condenser 35, the sixth condenser 37, the seventh condenser 48 and the eighth condenser 51, and is uniformly irradiated to the first local oscillator stage crystal 5, the second local oscillator stage crystal 13, the third local oscillator stage crystal 19, the first amplifier stage crystal 41 and the second amplifier stage crystal 45;

[0030] The laser light generated by the first local oscillator crystal 5, the second local oscillator crystal 13 and the third local oscillator crystal 19 is converted into the first horizontal linear polarized light after passing through the polarizer 2;

[0031] The first horizontal linear polarized light is reflected by the first total reflection mirror 1 and transmitted to the first reflection mirror 15;

[0032] The first reflector 15 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0033] The first horizontal linear polarized light is reflected by the first reflector 15 and then transmitted to the first polarizing prism 29;

[0034] The first polarizing prism 29 is arranged at the exit end of the local oscillation level optical path, and the first polarizing prism 29 is arranged to reflect the first horizontal linear polarized light and transmit the vertical linear polarized light;

[0035] The first polarizing prism 29 causes the first horizontal linear polarized light to be emitted in a direction parallel to the local oscillation level optical path, and the first polarizing prism 29 causes the first horizontal linear polarized light to be reflected toward the phase change material heat sink 28, and the first polarizing prism 29 causes the vertical linear polarized light to be transmitted in a direction parallel to the phase change material heat sink 28;

[0036] The first horizontal linear polarized light is reflected by the first polarization prism 29 and then transmitted to the first λ / 4 wave plate 16. The polarization direction of the first horizontal linear polarized light is rotated by 45° to become the first elliptically polarized light. The first elliptically polarized light is transmitted to the third local oscillation stage crystal 19.

[0037] The first elliptically polarized light is transmitted to the second total reflection mirror 17 after passing through the third local oscillation level crystal 19;

[0038] The first elliptically polarized light is reflected by the second total reflection mirror 17 and then passes through the third local oscillator crystal 19 and the first λ / 4 wave plate 16 again;

[0039] The first elliptically polarized light becomes vertically linearly polarized light after passing through the first λ / 4 wave plate 16 again;

[0040] The vertical linear polarized light is transmitted through the first polarizing prism 29 to the second reflector 30;

[0041] The second reflector 30 is arranged to be fixed at 45° along the vertical direction of the light path to fold the original light path 90° in the vertical direction;

[0042] The vertical linear polarized light is reflected by the second reflector 30 and then transmitted to the second polarizing prism 31;

[0043] The second polarizing prism 31 is arranged at the incident end of the amplifying stage optical path, and the second polarizing prism 31 is arranged to reflect vertical linear polarized light and transmit horizontal linear polarized light;

[0044] The second polarizing prism 31 allows the laser to be emitted in a direction parallel to the phase change material heat sink;

[0045] The vertical linear polarized light is reflected by the second polarizing prism 31 and then transmitted to the first amplifier stage crystal 41;

[0046] The vertical linear polarized light is amplified by the first amplifier crystal 41 and then transmitted to the third reflector 42;

[0047] The third reflector 42 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0048] The vertical linear polarized light is reflected by the third reflector 42 and then transmitted to the second λ / 4 wave plate 43;

[0049] The polarization direction of the vertical linear polarized light is rotated by 45° to become a second elliptically polarized light, and the second elliptically polarized light is transmitted to the fourth reflector 44;

[0050] The fourth reflector 44 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0051] The second elliptically polarized light is reflected by the fourth reflector 44 and then transmitted to the second amplifier stage crystal 45;

[0052] The second elliptically polarized light is further amplified by the second amplifier crystal 45 and then transmitted to the third total reflection mirror 55;

[0053] The second elliptically polarized light is reflected by the third total reflection mirror 55 and then passes through the second amplifier stage crystal 45, the fourth reflection mirror 44 and the second λ / 4 wave plate 43 again;

[0054] The second elliptically polarized light becomes second horizontally linear polarized light after passing through the second λ / 4 wave plate 43 again;

[0055] The second horizontal linear polarized light is again transmitted to the second polarizing prism 31 for further energy amplification after passing through the first amplifier crystal 41 and then emitted;

[0056] The first polarizing prism 29 and the second polarizing prism 31 cooperate with each other in refracting laser beams of different polarization states to form a three-dimensional sandwich optical path;

[0057] In the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, the seventh conductively-cooled stacked semiconductor laser 20, the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser During the operation of the laser 39, the twelfth conductively cooled stacked semiconductor laser 47, the thirteenth conductively cooled stacked semiconductor laser 49, the fourteenth conductively cooled stacked semiconductor laser 52 and the fifteenth conductively cooled stacked semiconductor laser 53, the heat generated is firstly conducted to the phase change material heat sink 28. As the operating temperature of the phase change material heat sink 28 rises, the heat is conducted to the thermal phase change material 56. When the temperature reaches the melting point of the thermal phase change material 56, the thermal phase change material 56 gradually begins to change into a liquid state and begins to flow and dissipate heat, so that the heat dissipation effect reaches an optimal state.

[0058] In summary, the purpose of the present invention is to solve the problems of serious waste heat deposition, high energy consumption and complex structure of traditional intermittent solid lasers when excited at high peak power. By designing a heat dissipation plate made of thermal phase change material, the limitations of large volume, high power consumption, high noise and low heat exchange efficiency existing in water cooling, air cooling, TEC cooling and other methods are solved, so as to be suitable for miniaturized intermittent solid lasers. Therefore, the present invention provides a cooling component with simple structure, low energy consumption and small volume, which can effectively dissipate heat for intermittent solid-state lasers. The local oscillator-level optical path and the amplifying-level optical path are respectively arranged on the two side surfaces of the phase change material heat sink, the local oscillator-level optical path is arranged on the upper surface of the phase change material heat sink, and the amplifying-level optical path is arranged on the lower surface of the phase change material heat sink. The optical path connection between the local oscillator-level optical path and the amplifying-level optical path is achieved by arranging two polarizing prisms, wherein the two polarizing prisms are respectively arranged at the exit end of the local oscillator-level optical path and the incident end of the amplifying-level optical path, forming a three-dimensional sandwich optical path. The present invention realizes heat absorption heat dissipation for the local oscillator-level optical path and the amplifying-level optical path simultaneously by the phase change material heat sink, thereby realizing a high-energy narrow-pulse-width solid-state laser that can be quickly started, has a novel structure, strong environmental adaptability, and outputs laser rapidly while ensuring output performance.

[0059] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] The above and other features, advantages and aspects of the embodiments of the present invention will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein

[0061] Figure 1 A schematic diagram of a back-to-back endothermic laser device.

[0062] Figure 2 This is a schematic diagram of the local oscillator optical path of a back-to-back heat absorption laser device.

[0063] Figure 3 This is a schematic diagram of the optical path of the amplifier stage of a back-to-back heat-absorbing laser device.

[0064] Figure 4 The figure is a schematic diagram of the focusing cavity structure of the local oscillator optical path of a back-to-back heat absorption laser device.

[0065] Figure 5 The schematic diagram is a structural diagram of a phase change material heat sink of a back-to-back heat-absorbing laser device.

[0066] Figure 1-5 In the figure, the structural components indicated by the reference numerals are

[0067] 1. The first total reflection mirror; 2. The polarizer; 3. The polarizer base; 4. The first bracket of the first local oscillator crystal; 5. The first local oscillator crystal; 6. The first condenser; 7. The first conduction-cooled stacked semiconductor laser; 8. The second bracket of the first local oscillator crystal; 9. The first bracket of the second local oscillator crystal; 10. The second condenser; 11. The second conduction-cooled stacked semiconductor laser; 12. The third conduction-cooled stacked semiconductor laser; 13. The second local oscillator crystal; 14. The second bracket of the second local oscillator crystal; 15. The first reflecting mirror; 16. The first λ / 4 wave plate; 17. The second total reflection mirror; 18. The third bracket of the third local oscillator crystal; 19. The third local oscillator crystal; 20. The seventh conduction-cooled stacked semiconductor laser; 21. The third condenser; 22. The sixth conduction-cooled stacked semiconductor laser; 23. The second bracket of the third local oscillator crystal; 24. The fourth condenser; 25. The fifth conduction-cooled stacked semiconductor laser; 26. The fourth conduction-cooled stacked semiconductor laser; 27. The first bracket of the third local oscillator crystal; 28. Phase change material heat sink; 29 first polarizing prism; 30 second reflector; 31 second polarizing prism; 32 first amplifier crystal first bracket; 33 eighth conduction-cooled stacked semiconductor laser; 34 ninth conduction-cooled stacked semiconductor laser; 35 fifth condenser; 36 first amplifier crystal second bracket; 37 sixth condenser; 38 tenth conduction-cooled stacked semiconductor laser; 39 eleventh conduction-cooled stacked semiconductor laser; 40 first amplifier crystal third bracket; 41 first amplifier crystal; 42 third reflector; 43 second λ / 4 wave plate; 44 fourth reflector; 45 second amplifier crystal; 46 second amplifier crystal first bracket; 47 twelfth conduction-cooled stacked semiconductor laser; 48 seventh condenser; 49 thirteenth conduction-cooled stacked semiconductor laser; 50 second amplifier crystal second bracket; 51 eighth condenser; 52 fourteenth conduction-cooled stacked semiconductor laser; 53 fifteenth conduction-cooled stacked semiconductor laser; 54 The second amplifying stage crystal third bracket; 55 the third total reflection mirror; 56 the thermal phase change material. DETAILED DESCRIPTION

[0068] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0069] In addition, the term "and / or" in this article is only a description of the association relationship of the associated objects, indicating that there can be three relationships. For example, A and / or B can mean that A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0070] Refer to the following Figures 1 to 5 A back-to-back heat absorption laser device provided by an embodiment of the present invention is described.

[0071] The present invention proposes a back-to-back heat absorption laser device, such as Figure 1 As shown, it includes a local oscillator-level optical path, an amplifier-level optical path and a phase change material heat sink, wherein the local oscillator-level optical path and the amplifier-level optical path are respectively arranged on the two side surfaces of the phase change material heat sink, the local oscillator-level optical path is arranged on the upper surface of the phase change material heat sink, and the amplifier-level optical path is arranged on the lower surface of the phase change material heat sink, and the phase change material heat sink includes a thermal phase change material inside, and the phase change material heat sink simultaneously realizes heat absorption for the local oscillator-level optical path and the amplifier-level optical path; wherein,

[0072] like Figure 2 The figure shows the structure of the local oscillation level optical path, wherein the local oscillation level optical path is sequentially provided with a first total reflection mirror 1, a polarizer 2, a polarizer base 3, a first local oscillation level crystal first bracket 4, a first local oscillation level crystal 5, a first condenser 6, a first conduction-cooled stacked array semiconductor laser 7, a first local oscillation level crystal second bracket 8, a second local oscillation level crystal first bracket 9, a second condenser 10, a second conduction-cooled stacked array semiconductor laser 11, a third conduction-cooled stacked array semiconductor laser 12, a second local oscillation level crystal 13, and a second local oscillation level crystal second bracket 1 4. a first reflecting mirror 15, a first polarizing prism 29, a first λ / 4 wave plate 16, a first bracket 27 for a third local oscillator-level crystal, a fourth conductively-cooled stacked semiconductor laser 26, a fifth conductively-cooled stacked semiconductor laser 25, a third condenser 24, a second bracket 23 for a third local oscillator-level crystal, a sixth conductively-cooled stacked semiconductor laser 22, a fourth condenser 21, a seventh conductively-cooled stacked semiconductor laser 20, a third local oscillator-level crystal 19, a third bracket 18 for a third local oscillator-level crystal, a second total reflection mirror 17, and a second reflecting mirror 30.

[0073] like Figure 3The figure shows the structure of the optical path of the amplifier stage, wherein the optical path of the amplifier stage is provided with a second polarizing prism 31, a first bracket 32 ​​of the first amplifier stage crystal, an eighth conductively cooled stacked array semiconductor laser 33, a ninth conductively cooled stacked array semiconductor laser 34, a fifth condenser 35, a second bracket 36 of the first amplifier stage crystal, a sixth condenser 37, a tenth conductively cooled stacked array semiconductor laser 38, an eleventh conductively cooled stacked array semiconductor laser 39, a third bracket 40 of the first amplifier stage crystal, a first amplifier stage crystal 41, a third reflector 42, a second λ / 4 wave plate 43, a fourth reflector 44, a second amplifier stage crystal 45, a first bracket 46 of the second amplifier stage crystal, a twelfth conductively cooled stacked array semiconductor laser 47, a seventh condenser 48, a thirteenth conductively cooled stacked array semiconductor laser 49, a second bracket 50 of the second amplifier stage crystal, an eighth condenser 51, a fourteenth conductively cooled stacked array semiconductor laser 52, a fifteenth conductively cooled stacked array semiconductor laser 53, a third bracket 54 of the second amplifier stage crystal, and a third total reflection mirror 55.

[0074] In one embodiment, the polarizer 2 is used to generate horizontal linear polarized light.

[0075] In one embodiment, the first local oscillator crystal 5 is a Nd:YAG round rod with a diameter of 4 mm and a length of 21 mm. 3+ The ion doping concentration is 1%. The side of the crystal rod of the first local oscillator level crystal 5 is usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end faces of the crystal rod of the first local oscillator level crystal 5 are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser.

[0076] In one embodiment, the second local oscillator crystal 13 is a Nd:YAG round rod with a diameter of 4 mm and a length of 36 mm. 3+ The ion doping concentration is 1%. The side surfaces of the crystal rod of the second local oscillation stage crystal 13 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The crystal rod of the second local oscillation stage crystal 13 is polished on both ends and coated with a 1064 nm anti-reflection film, and is used as a gain medium for generating 1064 nm laser.

[0077] In one embodiment, the third local oscillator crystal 19 is a Nd:YAG round rod with a diameter of 4 mm and a length of 68 mm. 3+ The ion doping concentration is 1%. The side surfaces of the crystal rod of the third local oscillation level crystal 19 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end surfaces of the crystal rod of the third local oscillation level crystal 19 are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser.

[0078] In one embodiment, the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are Nd:YAG round rods with a diameter of 6 mm and a length of 70 mm. 3+ The ion doping concentration is 1%. The sides of the crystal rods of the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are usually roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end surfaces of the crystal rods of the first amplifying stage crystal 41 and the second amplifying stage crystal 45 are polished and coated with a 1064 nm anti-reflection film, and are used as gain media for generating 1064 nm amplified lasers.

[0079] In one embodiment, if Figure 4 The schematic diagram of the structure of the focusing cavity of the local oscillator optical path of a back-to-back heat absorption laser device is shown. The focusing cavity of the local oscillator optical path is composed of the first local oscillator crystal 5, the first concentrator 6, and the first conduction-cooled stacked array semiconductor laser 7. The two end faces of the first local oscillator crystal 5 are bonded to the grooves of the first bracket 4 of the first local oscillator crystal and the second bracket 8 of the first local oscillator crystal by silver-filled epoxy resin adhesive. The first concentrator 6 is installed on the first bracket 4 of the first local oscillator crystal and the second bracket 8 of the first local oscillator crystal. The pump light emitted by the first conduction-cooled stacked array semiconductor laser 7 is reflected on the inner surface of the first concentrator 6, and a uniform light field is formed in the first concentrator 6, thereby improving the uniformity of the pumping and further improving the quality of the laser beam output by the laser device.

[0080] In one embodiment, the first concentrator 6 is an arc structure with an arc length of 32 mm and a length of 13 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, which is used to reflect 808 nm pump light to the surface of the first local oscillator crystal 5.

[0081] In one embodiment, the second concentrator 10 is an arc structure with an arc length of 32 mm and a length of 29 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, which is used to reflect 808 nm pump light to the surface of the second local oscillation stage crystal 13.

[0082] In one embodiment, the third concentrator 24 and the fourth concentrator 21 are arc structures with an arc length of 32 mm and a length of 29 mm. They are made of copper, and the inner surface is polished and plated with a high-reflection optical silver coating, which is used to reflect 808 nm pump light to the surface of the third local oscillation level crystal 19.

[0083] In one embodiment, the fifth concentrator 35 and the sixth concentrator 37 are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, and the inner surface is polished and plated with a high-reflection optical silver coating, which is used to reflect 808 nm pump light to the surface of the first amplifier stage crystal 41.

[0084] In one embodiment, the seventh concentrator 48 and the eighth concentrator 51 are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, polished and plated with a high-reflection optical silver coating, and are used to reflect 808 nm pump light to the surface of the second amplifier stage crystal 45.

[0085] In one embodiment, the output wavelength of the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 is 808 nm, and is used as a local oscillator-level optical path pump source.

[0086] In one embodiment, the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 have an output wavelength of 808 nm and are used as pump sources for the amplifier stage optical path.

[0087] In one embodiment, the first bracket 4 of the first local oscillation level crystal, the second bracket 8 of the first local oscillation level crystal, the first bracket 9 of the second local oscillation level crystal, the second bracket 14 of the second local oscillation level crystal, the first bracket 27 of the third local oscillation level crystal, the second bracket 23 of the third local oscillation level crystal, the third bracket 18 of the third local oscillation level crystal, the first bracket 32 ​​of the first amplification level crystal, the second bracket 36 of the first amplification level crystal, the third bracket 40 of the first amplification level crystal, the first bracket 46 of the second amplification level crystal, the second bracket 50 of the second amplification level crystal, and the third bracket 54 of the second amplification level crystal are made of high thermal conductivity materials such as copper, and the surface is polished.

[0088] In one embodiment, if Figure 5The figure shows a schematic diagram of the phase change material heat sink structure of a back-to-back heat absorption laser device. The phase change material heat sink 28 is made of a material with high thermal conductivity such as copper, and the upper and lower sides are used to fix the local oscillation optical path and the amplification optical path; the thermal phase change material 56 is a liquid gallium indium tin alloy, and the thermal phase change material 56 is filled in the rectangular parallelepiped groove inside the phase change material heat sink 28 and sealed.

[0089] The first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 are fixed on the upper surface of the phase-change material heat sink 28, and the contact surfaces between the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, and the seventh conductively-cooled stacked semiconductor laser 20 and the phase-change material heat sink 28 are filled with thermally conductive silicone grease to improve thermal conductivity efficiency.

[0090] The eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 are fixed on the lower surface of the phase-change material heat sink 28, and the contact surfaces between the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 and the phase-change material heat sink 28 are filled with thermally conductive silicone grease to improve thermal conductivity.

[0091] In one embodiment, there is also provided an output method using any of the above-mentioned back-to-back heat absorption laser devices, the method comprising:

[0092] turning on the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, the seventh conductively-cooled stacked semiconductor laser 20, the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser 39, the twelfth conductively-cooled stacked semiconductor laser 47, the thirteenth conductively-cooled stacked semiconductor laser 49, the fourteenth conductively-cooled stacked semiconductor laser 52, and the fifteenth conductively-cooled stacked semiconductor laser 53 to emit pump light;

[0093] The pump light passes through the first condenser 6, the second condenser 10, the third condenser 24, the fourth condenser 21, the fifth condenser 35, the sixth condenser 37, the seventh condenser 48 and the eighth condenser 51, and is uniformly irradiated to the first local oscillator stage crystal 5, the second local oscillator stage crystal 13, the third local oscillator stage crystal 19, the first amplifier stage crystal 41 and the second amplifier stage crystal 45;

[0094] The laser light generated by the first local oscillator crystal 5, the second local oscillator crystal 13 and the third local oscillator crystal 19 is converted into the first horizontal linear polarized light after passing through the polarizer 2;

[0095] The first horizontal linear polarized light is reflected by the first total reflection mirror 1 and transmitted to the first reflection mirror 15;

[0096] The first reflector 15 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0097] The first horizontal linear polarized light is reflected by the first reflector 15 and then transmitted to the first polarizing prism 29;

[0098] The first polarizing prism 29 is arranged at the exit end of the local oscillation level optical path, and the first polarizing prism 29 is arranged to reflect the first horizontal linear polarized light and transmit the vertical linear polarized light;

[0099] The first polarizing prism causes the first horizontal linear polarized light to be emitted in a direction parallel to the local oscillation level optical path, and the first polarizing prism causes the first horizontal linear polarized light to be reflected toward the phase change material heat sink, and the first polarizing prism causes the vertical linear polarized light to be transmitted in a direction parallel to the phase change material heat sink;

[0100] The first horizontal linear polarized light is reflected by the first polarization prism 29 and then transmitted to the first λ / 4 wave plate 16. The polarization direction of the first horizontal linear polarized light is rotated by 45° to become the first elliptically polarized light. The first elliptically polarized light is transmitted to the third local oscillation stage crystal 19.

[0101] The first elliptically polarized light is transmitted to the second total reflection mirror 17 after passing through the third local oscillation level crystal 19;

[0102] The first elliptically polarized light is reflected by the second total reflection mirror 17 and then passes through the third local oscillator crystal 19 and the first λ / 4 wave plate 16 again;

[0103] The first elliptically polarized light becomes vertically linearly polarized light after passing through the first λ / 4 wave plate 16 again;

[0104] The vertical linear polarized light is transmitted through the first polarizing prism 29 to the second reflector 30;

[0105] The second reflector 30 is arranged to be fixed at 45° along the vertical direction of the light path to fold the original light path 90° in the vertical direction;

[0106] The vertical linear polarized light is reflected by the second reflector 30 and then transmitted to the second polarizing prism 31;

[0107] The second polarizing prism 31 is arranged at the incident end of the amplifying stage optical path, and the second polarizing prism 31 is arranged to reflect vertical linear polarized light and transmit horizontal linear polarized light;

[0108] The second polarizing prism 31 allows the laser to be emitted in a direction parallel to the phase change material heat sink;

[0109] The vertical linear polarized light is reflected by the second polarizing prism 31 and then transmitted to the first amplifier stage crystal 41;

[0110] The vertical linear polarized light is amplified by the first amplifier crystal 41 and then transmitted to the third reflector 42;

[0111] The third reflector 42 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0112] The vertical linear polarized light is reflected by the third reflector 42 and then transmitted to the second λ / 4 wave plate 43;

[0113] The polarization direction of the vertical linear polarized light is rotated by 45° to become a second elliptically polarized light, and the second elliptically polarized light is transmitted to the fourth reflector 44;

[0114] The fourth reflector 44 is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction;

[0115] The second elliptically polarized light is reflected by the fourth reflector 44 and then transmitted to the second amplifier stage crystal 45;

[0116] The second elliptically polarized light is further amplified by the second amplifier crystal 45 and then transmitted to the third total reflection mirror 55;

[0117] The second elliptically polarized light is reflected by the third total reflection mirror 55 and then passes through the second amplifier stage crystal 45, the fourth reflection mirror 44 and the second λ / 4 wave plate 43 again;

[0118] The second elliptically polarized light becomes second horizontally linear polarized light after passing through the second λ / 4 wave plate 43 again;

[0119] The second horizontal linear polarized light is again transmitted to the second polarizing prism 31 for further energy amplification after passing through the first amplifier crystal 41 and then emitted;

[0120] The first polarizing prism 29 and the second polarizing prism 31 cooperate with each other in refracting laser beams of different polarization states to form a three-dimensional sandwich optical path;

[0121] In the first conductively-cooled stacked semiconductor laser 7, the second conductively-cooled stacked semiconductor laser 11, the third conductively-cooled stacked semiconductor laser 12, the fourth conductively-cooled stacked semiconductor laser 26, the fifth conductively-cooled stacked semiconductor laser 25, the sixth conductively-cooled stacked semiconductor laser 22, the seventh conductively-cooled stacked semiconductor laser 20, the eighth conductively-cooled stacked semiconductor laser 33, the ninth conductively-cooled stacked semiconductor laser 34, the tenth conductively-cooled stacked semiconductor laser 38, the eleventh conductively-cooled stacked semiconductor laser During the operation of the laser 39, the twelfth conductively cooled stacked semiconductor laser 47, the thirteenth conductively cooled stacked semiconductor laser 49, the fourteenth conductively cooled stacked semiconductor laser 52 and the fifteenth conductively cooled stacked semiconductor laser 53, the heat generated is firstly conducted to the phase change material heat sink 28. As the operating temperature of the phase change material heat sink 28 rises, the heat is conducted to the thermal phase change material 56. When the temperature reaches the melting point of the thermal phase change material 56, the thermal phase change material 56 gradually begins to change into a liquid state and begins to flow and dissipate heat, so that the heat dissipation effect reaches an optimal state.

[0122] In the description of this specification, the terms "connection", "installation", "fixation" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific state.

[0123] In the description of this specification, the description of the terms "one embodiment", "some embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0124] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A back-to-back heat absorption laser device, characterized in that: It includes a local oscillator-level optical path, an amplifier-level optical path and a phase change material heat sink, wherein the local oscillator-level optical path and the amplifier-level optical path are respectively arranged on the two side surfaces of the phase change material heat sink, the local oscillator-level optical path is arranged on the upper surface of the phase change material heat sink, and the amplifier-level optical path is arranged on the lower surface of the phase change material heat sink, and the phase change material heat sink includes a thermal phase change material inside, and the phase change material heat sink simultaneously realizes heat absorption for the local oscillator-level optical path and the amplifier-level optical path; wherein, The local oscillation level optical path is provided with a first total reflection mirror, a polarizer, a polarizer base, a first local oscillation level crystal first bracket, a first local oscillation level crystal, a first condenser, a first conduction-cooled stacked array semiconductor laser, a first local oscillation level crystal second bracket, a second local oscillation level crystal first bracket, a second condenser, a second conduction-cooled stacked array semiconductor laser, a third conduction-cooled stacked array semiconductor laser, a second local oscillation level crystal, a second bracket of the second local oscillation level crystal, a first reflector, a first polarizing prism, a first λ / 4 wave plate, a first bracket of the third local oscillation level crystal, a fourth conduction-cooled stacked array semiconductor laser, a fifth conduction-cooled stacked array semiconductor laser, a third condenser, a third local oscillation level crystal second bracket, a sixth conduction-cooled stacked array semiconductor laser, a fourth condenser, a seventh conduction-cooled stacked array semiconductor laser, a third local oscillation level crystal, a third bracket of the third local oscillation level crystal, a second total reflection mirror, and a second reflector; The amplifier optical path is provided with a second polarizing prism, a first bracket of the first amplifier crystal, an eighth conductively cooled stacked array semiconductor laser, a ninth conductively cooled stacked array semiconductor laser, a fifth condenser, a second bracket of the first amplifier crystal, a sixth condenser, a tenth conductively cooled stacked array semiconductor laser, an eleventh conductively cooled stacked array semiconductor laser, a third bracket of the first amplifier crystal, a first amplifier crystal, a third reflector, a second λ / 4 wave plate, a fourth reflector, a second amplifier crystal, a first bracket of the second amplifier crystal, a twelfth conductively cooled stacked array semiconductor laser, a seventh condenser, a thirteenth conductively cooled stacked array semiconductor laser, a second bracket of the second amplifier crystal, an eighth condenser, a fourteenth conductively cooled stacked array semiconductor laser, a fifteenth conductively cooled stacked array semiconductor laser, a third bracket of the second amplifier crystal, and a third total reflection mirror in sequence; The polarizer is used to generate a first horizontal linear polarized light; The first horizontally polarized light is reflected by the first total reflection mirror and transmitted to the first reflection mirror; The first reflector is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction; The first horizontal linear polarized light is reflected by the first reflector and then transmitted to the first polarizing prism; The first polarizing prism is arranged at the exit end of the local oscillation level optical path, and the first polarizing prism is arranged to reflect the first horizontal linear polarized light and transmit the vertical linear polarized light; The first polarizing prism causes the first horizontal linear polarized light to be emitted in a direction parallel to the local oscillation level optical path, and the first polarizing prism causes the first horizontal linear polarized light to be reflected toward the phase change material heat sink, and the first polarizing prism causes the vertical linear polarized light to be transmitted in a direction parallel to the phase change material heat sink; The first horizontal linear polarized light is reflected by the first polarization prism and then transmitted to the first λ / 4 wave plate. The polarization direction of the first horizontal linear polarized light is rotated by 45° to become the first elliptically polarized light. The first elliptically polarized light is transmitted to the third local oscillation level crystal. The first elliptically polarized light is transmitted to the second total reflection mirror after passing through the third local oscillation level crystal; The first elliptically polarized light is reflected by the second total reflection mirror and then passes through the third local oscillator crystal and the first λ / 4 wave plate again; The first elliptically polarized light becomes vertically linearly polarized light after passing through the first λ / 4 wave plate again; The vertical linear polarized light is transmitted through the first polarizing prism to the second reflector; The second reflector is arranged to be fixed at 45° along the vertical direction of the light path so as to fold the original light path 90° in the vertical direction; The vertical linear polarized light is reflected by the second reflector and then transmitted to the second polarizing prism; The second polarizing prism is arranged at the incident end of the amplifying stage optical path, and the second polarizing prism is arranged to reflect the vertical linear polarized light and transmit the horizontal linear polarized light; The second polarizing prism causes the vertical linear polarized light to be emitted in a direction parallel to the phase change material heat sink; The first polarizing prism and the second polarizing prism cooperate with each other in reflecting and refracting lasers of different polarization states to form a three-dimensional sandwich optical path; The focusing cavity of the local oscillator optical path is composed of the first local oscillator crystal, the first concentrator, and the first conduction-cooled stacked array semiconductor laser. The two end faces of the first local oscillator crystal are bonded to the grooves of the first bracket of the first local oscillator crystal and the second bracket of the first local oscillator crystal by silver-filled epoxy resin adhesive. The first concentrator is installed on the first bracket of the first local oscillator crystal and the second bracket of the first local oscillator crystal. The pump light emitted by the first conduction-cooled stacked array semiconductor laser is reflected on the inner surface of the first concentrator, forming a uniform light field in the first concentrator, thereby improving pump uniformity and further improving the quality of the laser beam output by the laser device.

2. The back-to-back heat absorption laser device according to claim 1, characterized in that: The phase change material heat sink is made of copper, and the upper and lower sides are used to fix the local oscillation level optical path and the amplification level optical path; The thermal phase change material is a liquid gallium-indium-tin alloy, and the thermal phase change material is filled in a rectangular parallelepiped groove inside the phase change material heat sink and is sealed.

3. The back-to-back heat absorption laser device according to claim 1, characterized in that: The first local oscillator crystal is a Nd:YAG round rod with a diameter of 4 mm and a length of 21 mm. 3+ The ion doping concentration is 1%, the side of the crystal rod of the first local oscillator crystal is roughened to improve the uniformity of the pump and avoid parasitic oscillation, and the double-end faces of the crystal rod of the first local oscillator crystal are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser; The second local oscillator crystal is a Nd:YAG round rod with a diameter of 4 mm and a length of 36 mm. 3+ The ion doping concentration is 1%, the side of the crystal rod of the second local oscillator crystal is roughened to improve the uniformity of the pump and avoid parasitic oscillation, and the double-end surface of the crystal rod of the second local oscillator crystal is polished and coated with a 1064 nm anti-reflection film, which is used as a gain medium for generating 1064 nm laser; The third local oscillation crystal is a Nd:YAG round rod with a diameter of 4 mm and a length of 68 mm. 3+ The ion doping concentration is 1%, and the side of the crystal rod of the third local oscillation level crystal is roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end faces of the crystal rod of the third local oscillation level crystal are polished and coated with a 1064 nm anti-reflection film, and are used as a gain medium for generating 1064 nm laser.

4. The back-to-back heat absorption laser device according to claim 1, characterized in that: The first amplification stage crystal and the second amplification stage crystal are Nd:YAG round rods with a diameter of 6 mm and a length of 70 mm. 3+ The ion doping concentration is 1%, and the sides of the crystal rods of the first amplifying stage crystal and the second amplifying stage crystal are roughened to improve the uniformity of the pump and avoid parasitic oscillation. The double-end surfaces of the crystal rods of the first amplifying stage crystal and the second amplifying stage crystal are polished and coated with a 1064 nm anti-reflection film, and are used as gain media for generating 1064 nm amplified lasers.

5. The back-to-back heat absorption laser device according to claim 1, characterized in that: The first concentrator is an arc structure with an arc length of 32 mm and a length of 13 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, and is used to reflect the 808 nm pump light to the surface of the first local oscillator crystal; The second concentrator is an arc structure with an arc length of 32 mm and a length of 29 mm. It is made of copper, and its inner surface is polished and plated with a high-reflection optical silver coating, and is used to reflect the 808 nm pump light to the surface of the second local oscillator crystal. The third concentrator and the fourth concentrator are arc structures with an arc length of 32 mm and a length of 29 mm. They are made of copper, and their inner surfaces are polished and plated with a high-reflection optical silver coating, and are used to reflect 808 nm pump light to the surface of the third local oscillation level crystal.

6. The back-to-back heat absorption laser device according to claim 1, characterized in that: The fifth concentrator and the sixth concentrator are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, and their inner surfaces are polished and plated with a high-reflection optical silver coating, and are used to reflect the 808 nm pump light to the surface of the first amplifier stage crystal; The seventh concentrator and the eighth concentrator are arc structures with an arc length of 40 mm and a length of 29 mm. They are made of copper, have a polished surface and are plated with a high-reflection optical silver coating, and are used to reflect 808 nm pump light to the surface of the second amplifier stage crystal.

7. An output method of a back-to-back endothermic laser device, using the back-to-back endothermic laser device according to any one of claims 1 to 6, comprising: Turning on the first conductively-cooled stacked semiconductor laser, the second conductively-cooled stacked semiconductor laser, the third conductively-cooled stacked semiconductor laser, the fourth conductively-cooled stacked semiconductor laser, the fifth conductively-cooled stacked semiconductor laser, the sixth conductively-cooled stacked semiconductor laser, the seventh conductively-cooled stacked semiconductor laser, the eighth conductively-cooled stacked semiconductor laser, the ninth conductively-cooled stacked semiconductor laser, the tenth conductively-cooled stacked semiconductor laser, the eleventh conductively-cooled stacked semiconductor laser, the twelfth conductively-cooled stacked semiconductor laser, the thirteenth conductively-cooled stacked semiconductor laser, the fourteenth conductively-cooled stacked semiconductor laser, and the fifteenth conductively-cooled stacked semiconductor laser to emit pump light; The pump light is uniformly irradiated to the first local oscillator stage crystal, the second local oscillator stage crystal, the third local oscillator stage crystal, the first amplifier stage crystal and the second amplifier stage crystal through the first condenser, the second condenser, the third condenser, the fourth condenser, the fifth condenser, the sixth condenser, the seventh condenser and the eighth condenser; The laser light generated by the first local oscillator crystal, the second local oscillator crystal and the third local oscillator crystal is converted into the first horizontal linear polarized light through the polarizer; The first horizontally polarized light is reflected by the first total reflection mirror and transmitted to the first reflection mirror; The first reflector is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction; The first horizontal linear polarized light is reflected by the first reflector and then transmitted to the first polarizing prism; The first polarizing prism is arranged at the exit end of the local oscillation level optical path, and the first polarizing prism is arranged to reflect the first horizontal linear polarized light and transmit the vertical linear polarized light; The first polarizing prism causes the first horizontal linear polarized light to be emitted in a direction parallel to the local oscillation level optical path, and the first polarizing prism causes the first horizontal linear polarized light to be reflected toward the phase change material heat sink, and the first polarizing prism causes the vertical linear polarized light to be transmitted in a direction parallel to the phase change material heat sink; The first horizontal linear polarized light is reflected by the first polarization prism and then transmitted to the first λ / 4 wave plate. The polarization direction of the first horizontal linear polarized light is rotated by 45° to become the first elliptically polarized light. The first elliptically polarized light is transmitted to the third local oscillation level crystal. The first elliptically polarized light is transmitted to the second total reflection mirror after passing through the third local oscillation level crystal; The first elliptically polarized light is reflected by the second total reflection mirror and then passes through the third local oscillator crystal and the first λ / 4 wave plate again; The first elliptically polarized light becomes vertically linearly polarized light after passing through the first λ / 4 wave plate again; The vertical linear polarized light is transmitted through the first polarizing prism to the second reflector; The second reflector is arranged to be fixed at 45° along the vertical direction of the light path so as to fold the original light path 90° in the vertical direction; The vertical linear polarized light is reflected by the second reflector and then transmitted to the second polarizing prism; The second polarizing prism is arranged at the incident end of the amplifying stage optical path, and the second polarizing prism is arranged to reflect vertical linear polarized light and transmit horizontal linear polarized light; The second polarizing prism causes the laser to be emitted in a direction parallel to the phase change material heat sink; The vertical linear polarized light is reflected by the second polarizing prism and then transmitted to the first amplifier stage crystal; The vertical linear polarized light is amplified by the first amplifier crystal and then transmitted to the third reflector; The third reflector is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction; The vertical linear polarized light is reflected by the third reflector and then transmitted to the second λ / 4 wave plate; The polarization direction of the vertical linear polarized light is rotated by 45° to become a second elliptically polarized light, and the second elliptically polarized light is transmitted to the fourth reflector; The fourth reflector is arranged to be fixed at 45° along the horizontal direction of the light path to fold the original light path 90° in the horizontal direction; The second elliptically polarized light is reflected by the fourth reflector and then transmitted to the second amplifier stage crystal; The second elliptically polarized light is further amplified by the second amplifier crystal and then transmitted to the third total reflection mirror; The second elliptically polarized light is reflected by the third total reflection mirror and then passes through the second amplifier stage crystal, the fourth reflection mirror and the second λ / 4 wave plate again; The second elliptically polarized light becomes a second horizontally linear polarized light after passing through the second λ / 4 wave plate again; The second horizontal linear polarized light is further amplified by the first amplifier crystal and then transmitted to the second polarizing prism for emission; The first polarizing prism and the second polarizing prism cooperate with each other in reflecting and refracting lasers of different polarization states to form a three-dimensional sandwich optical path; The focusing cavity of the local oscillator optical path is composed of the first local oscillator crystal, the first concentrator, and the first conduction-cooled stacked array semiconductor laser. The two end faces of the first local oscillator crystal are bonded to the grooves of the first bracket of the first local oscillator crystal and the second bracket of the first local oscillator crystal by silver-filled epoxy resin adhesive. The first concentrator is installed on the first bracket of the first local oscillator crystal and the second bracket of the first local oscillator crystal. The pump light emitted by the first conductively cooled stacked array semiconductor laser is reflected on the inner surface of the first concentrator, and a uniform light field is formed in the first concentrator, thereby improving the uniformity of the pumping and further improving the quality of the laser beam output by the laser device; During the operation of the first conductively-cooled stacked semiconductor laser, the second conductively-cooled stacked semiconductor laser, the third conductively-cooled stacked semiconductor laser, the fourth conductively-cooled stacked semiconductor laser, the fifth conductively-cooled stacked semiconductor laser, the sixth conductively-cooled stacked semiconductor laser, the seventh conductively-cooled stacked semiconductor laser, the eighth conductively-cooled stacked semiconductor laser, the ninth conductively-cooled stacked semiconductor laser, the tenth conductively-cooled stacked semiconductor laser, the eleventh conductively-cooled stacked semiconductor laser, the twelfth conductively-cooled stacked semiconductor laser, the thirteenth conductively-cooled stacked semiconductor laser, the fourteenth conductively-cooled stacked semiconductor laser and the fifteenth conductively-cooled stacked semiconductor laser, the generated heat is firstly conducted to the phase change material heat sink. As the operating temperature of the phase change material heat sink rises, the heat is conducted to the thermal phase change material. When the temperature reaches the melting point of the thermal phase change material, the thermal phase change material gradually begins to change into a liquid state and begins to flow and dissipate heat, so that the heat dissipation effect reaches an optimal state.

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