High-frequency module and communication device

Abstract

The invention provides a high-frequency module and a communication device, which can reduce the change amount of the band-pass phase of a second filter according to the state of a first filter when the first filter and the second filter communicate at the same time. The high-frequency module includes a first switch, a first filter, a second filter, a power amplifier, and a low-noise amplifier. The first switch has a first terminal, a second terminal, and a third terminal. The first terminal is connected to the antenna terminal. The first filter is connected with the second terminal. The second filter is connected with the third terminal. The first filter has a common filter section and an additional filter section. The additional filter unit is connected between the power amplifier and the common filter unit. The low noise amplifier is connected to a path branched from a path between the common filter unit and the additional filter unit. The common filter unit is connected between the additional filter unit and the first switch.

Description

Technical Field

[0001] The present invention relates to a high frequency module and a communication device, and more particularly to a high frequency module capable of simultaneously performing first communication using a first communication frequency band and second communication using a second communication frequency band, and a communication device having the high frequency module. Background Art

[0002] The filter device described in Patent Document 1 includes a switch and a first filter. The switch includes a common terminal, a first selection terminal, and a second selection terminal. The first filter includes a filter circuit (common filter unit) and a series arm resonator (additional filter unit). The filter circuit is connected to one end of the series arm resonator. The first selection terminal is connected between one end of the series arm resonator and the filter circuit. The second selection terminal is connected to the other end of the series arm resonator.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-97103 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In the filter device described in Patent Document 1, when the common terminal of the switch is connected to an antenna terminal (that is, when the switch is an antenna switch), an additional filter unit is connected between the antenna switch and the common filter unit. In this case, when both the common filter unit and the additional filter unit are used for communication, the additional filter unit becomes the resonator at the end of the antenna switch side of the first filter. On the other hand, when only the common filter unit is used for communication, the resonator at the end of the antenna switch side of the common filter unit becomes the resonator at the end of the antenna switch side of the first filter. In this way, the structure of the resonator at the end of the antenna switch side of the first filter is different when the common filter unit and the additional filter unit are used for communication and when only the common filter unit is used for communication. Therefore, the impedance of the first filter side when viewed from the first switch is different when the common filter unit and the additional filter unit are used for communication and when only the common filter unit is used for communication.

[0008] Here, the filter device is set as a filter with a first communication frequency band as a passband, and another filter with a second communication frequency band as a passband is connected to the antenna terminal together with the filter device. In addition, the following situation is considered: in the filter device, while alternately performing communication using both the common filter unit and the additional filter unit and communication using only the common filter unit, the filter device and the other filter are used to communicate simultaneously. In this case, the following problem arises: the signal passing through the other filter changes accordingly with the state of the filter device due to the influence of the filter device.

[0009] In view of the above problems, the present invention aims to provide a high-frequency module and a communication device that can reduce the variation of the passband phase (Japanese: pass phase) of the second filter corresponding to the state of the first filter when communicating simultaneously using a first filter and a second filter used in time division duplexing.

[0010] Solutions for solving problems

[0011] A high frequency module according to one aspect of the present invention is a high frequency module capable of simultaneously performing a first communication using a first communication frequency band and a second communication using a second communication frequency band. The high frequency module comprises a first switch, a first filter, a second filter, a power amplifier and a low noise amplifier. The first switch comprises a first terminal, a second terminal and a third terminal. The first terminal is connected to an antenna terminal. The second terminal and the third terminal can switch between connection and non-connection with the first terminal. The first filter is connected to the second terminal and has a passband including the first communication frequency band. The second filter is connected to the third terminal and has a passband including the second communication frequency band. The first filter comprises a common filter unit and an additional filter unit. The common filter unit is used for both transmission and reception, and the transmission signal and the reception signal pass through the common filter unit in a time division duplex manner. The additional filter unit is used for one of transmission and reception. The additional filter unit is connected between the common filter unit and the first amplifier as one of the power amplifier and the low noise amplifier. The second amplifier as the remaining one of the power amplifier and the low noise amplifier is connected to a second signal path branched from the first signal path between the common filter unit and the additional filter unit. The common filter unit is connected between the additional filter unit and the first switch.

[0012] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and performs signal processing on the high-frequency signal.

[0013] Effects of the Invention

[0014] The high frequency module and communication device according to the present invention have the advantage that when communicating simultaneously using the first filter and the second filter used in time division duplexing, the variation of the passband phase of the second filter according to the state of the first filter can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a diagram showing the configuration of a high-frequency module and a communication device according to Embodiment 1.

[0016] Figure 2 This is a diagram showing the configuration of a high-frequency module and a communication device according to the second embodiment.

[0017] Figure 3 It is a cross-sectional view for explaining the arrangement relationship between the first chip (first filter) and the second switch in the second chip in the high-frequency module described above.

[0018] Figure 4 It is an explanatory diagram for explaining the arrangement relationship of a plurality of electrodes of the first chip in the above high-frequency module.

[0019] Figure 5 This is a configuration diagram of a high-frequency module and a communication device according to Modification 1 of Embodiment 2. DETAILED DESCRIPTION

[0020] (Implementation Method 1)

[0021] Hereinafter, a communication device 100 including the high-frequency module according to the first embodiment will be described in detail with reference to the drawings.

[0022] (1) Summary

[0023] like Figure 1As shown, the high-frequency module 1 involved in the first embodiment is a high-frequency module that can communicate simultaneously by a first communication using a first communication frequency band and a second communication using a second communication frequency band. The high-frequency module 1 includes a first switch 6, a first filter 7, second filters 8, 9, a power amplifier 10 (first amplifier) ​​and a low-noise amplifier 11 (second amplifier). The first switch 6 has a first terminal 6a, a second terminal 6b and a third terminal 6c. The first terminal 6a is connected to the antenna terminal 5a. The second terminal 6b and the third terminal 6c can switch between connection and non-connection with the first terminal 6a. The first filter 7 is connected to the second terminal 6b and has a passband including the first communication frequency band. The second filters 8, 9 are connected to the third terminal 6c and have a passband including the second communication frequency band. The first filter 7 has a shared filter unit 71 and an additional filter unit 72. The shared filter unit 71 is used for both sending and receiving, and the transmission signal and the reception signal pass through the shared filter unit 71 in a TDD (Time Division Duplex) manner. The additional filter unit 72 is used for one of sending and receiving. The additional filter unit 72 is connected between the common filter unit 71 and the first amplifier (in Figure 1 The power amplifier 10 is between the power amplifier 10 and the low noise amplifier 11. The second amplifier (in Figure 1 The low noise amplifier 11 is connected to the second signal path L2 branched from the first signal path L1 between the common filter section 71 and the additional filter section 72. The common filter section 71 is connected between the additional filter section 72 and the first switch 6.

[0024] According to this structure, the common filter unit 71 is connected between the additional filter unit 72 and the first switch 6. Therefore, the resonator of the end of the first filter 7 on the first switch 6 side (that is, the end of the common filter unit 71 on the first switch 6 side) in the operation of the first filter 7 during the transmission and reception of the TDD can be made the same. As a result, the change in the impedance of the first filter 7 when viewed from the second filter 8, 9 side between the operation of the first filter 7 during the transmission and the operation of the TDD during the reception can be reduced. Consider the case where the first communication using the first filter 7 and the second communication using the second filter 8, 9 are performed simultaneously. In this case, the following situation can be reduced: the phase of the signal (signal of the second communication frequency band) passing through the second filter 8, 9 changes between the operation of the first filter 7 during the transmission and the operation of the TDD during the reception. That is, the change amount of the passband phase of the second filter 8, 9 corresponding to the state of the first filter 7 can be reduced when the first filter 7 and the second filter 8, 9 communicate simultaneously.

[0025] (2) Structure of communication device

[0026] like Figure 1 As shown, the communication device 100 is a communication device having a high-frequency module 1. The communication device 100 is, for example, a portable terminal (such as a smartphone), but is not limited thereto, and may also be, for example, a wearable terminal (such as a smart watch). The high-frequency module 1 is, for example, a module that can support the 4G (fourth generation mobile communication) standard and the 5G (fifth generation mobile communication) standard. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0027] The communication device 100 includes a signal processing circuit 2 and an antenna 3 in addition to the high-frequency module 1 .

[0028] The high frequency module 1 is configured to amplify a transmission signal (high frequency signal) output from the signal processing circuit 2 and transmit it from the antenna 3, or to amplify a reception signal (high frequency signal) received by the antenna 3 and output it to the signal processing circuit 2. The high frequency module 1 is controlled by the signal processing circuit 2, for example.

[0029] The signal processing circuit 2 is connected to the high frequency module 1 and is configured to perform signal processing on a transmission signal to be output to the high frequency module 1 or a reception signal output from the high frequency module 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 2a and a baseband signal processing circuit 2b.

[0030] The RF signal processing circuit 2a is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmitting signals and receiving signals). The RF signal processing circuit 2a performs signal processing such as down-conversion on the receiving signal output from the high-frequency module 1 and outputs it to the baseband signal processing circuit 2b. In addition, the RF signal processing circuit 2a performs signal processing such as up-conversion on the transmitting signal output from the baseband signal processing circuit 2b and outputs it to the high-frequency module 1.

[0031] The baseband signal processing circuit 2b is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 2b outputs the received signal output from the RF signal processing circuit 2a to the outside. The output signal (received signal) is used for image display as an image signal, or is used for calls as a voice signal. In addition, the baseband signal processing circuit 2b generates a transmission signal based on the baseband signal (such as a voice signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 2a.

[0032] (3) Structure of high-frequency module

[0033] like Figure 1 As shown, the high frequency module 1 includes a plurality of external terminals 5a to 5f, a first switch 6, a first filter 7, and a plurality of Figure 1 In the example of FIG. 1 , there are two second filters 8 and 9 , power amplifiers 10 and 25 , low noise amplifiers 11 and 26 , matching circuits 12 to 14 , and a controller 15 .

[0034] The external terminal 5a is an antenna terminal to which the antenna 3 is connected. The external terminals 5b and 5d are connected to the output section (not shown) of the signal processing circuit 2, and are input terminals to which the transmission signal output from the output section of the signal processing circuit 2 is input. The external terminals 5c and 5e are connected to the input section (not shown) of the signal processing circuit 2, and are output terminals to output the reception signal processed by the high-frequency module 1 to the input section of the signal processing circuit 2. The external terminal 5f is connected to the signal output section (not shown) of the signal processing circuit 2, and is a signal input terminal to which the control signal for controlling the controller 15 is input from the signal processing circuit 2. Hereinafter, the external terminal 5a is sometimes described as the antenna terminal 5a, the external terminal 5b is sometimes described as the input terminal 5b, and the external terminal 5c is sometimes described as the output terminal 5c. In addition, the external terminal 5d is sometimes described as the input terminal 5d, the external terminal 5e is sometimes described as the output terminal 5e, and the external terminal 5f is sometimes described as the signal input terminal 5f.

[0035] The first switch 6 connects the connection destination of the antenna 3 to at least one of the first filter 7 and the second filters 8 and 9. The first switch 6 is controlled according to a control signal from the controller 15. The first switch 6 is, for example, a switch IC (Integrated Circuit). The first switch 6 has a first terminal 6a, a second terminal 6b, and a third terminal 6c. The first terminal 6a is a common terminal that can be selectively connected to the second terminal 6b and the third terminal 6c. The first terminal 6a is connected to the antenna terminal 5a. The second terminal 6b and the third terminal 6c are, for example, selection terminals that can switch between connection and non-connection with the first terminal 6a. The second terminal 6b is connected to the first filter 7. The third terminal 6c is connected to the second filters 8 and 9.

[0036] The first filter 7 is a transmit / receive filter having a passband including a transmit / receive frequency band of a first communication frequency band (e.g., Band 41). The first filter 7 is used for both transmission and reception, and a transmission signal and a reception signal pass through the first filter 7 in TDD. The first filter 7 is connected between the second terminal 6b of the first switch 6 and the power amplifier 10.

[0037] The first filter 7 includes an input-output unit 7 a , an input unit 7 b , an output unit 7 c , a common filter unit 71 , and an additional filter unit 72 .

[0038] The input-output section 7a is connected to the second terminal 6b of the first switch 6 via the matching circuit 12. The input section 7b is connected to the output section 10b of the power amplifier 10 via the matching circuit 13. A common filter section 71 and an additional filter section 72 are connected in series between the input-output section 7a and the input section 7b. A branch point N1 is provided in the first signal path L1 between the common filter section 71 and the additional filter section 72. A second signal path L2 connected to the input section 11a of the low noise amplifier 11 is branched from the branch point N1. The output section 7c is a portion that outputs the current flowing from the branch point N1 to the second signal path L2 at the branch point N1 from the inside of the first filter 7 to the outside. The output section 7c is provided in the middle of the second signal path L2.

[0039] The shared filter unit 71 is a transmit / receive filter used for both transmission and reception, and the transmission signal and the reception signal pass through the shared filter unit 71 in TDD. The shared filter unit 71 has a passband including the first communication frequency band. The shared filter unit 71 is connected between the input / output unit 7a and the output unit 7c of the first filter 7. In other words, the shared filter unit 71 is connected between the additional filter unit 72 and the second terminal 6b of the first switch 6. That is, the shared filter unit 71 is arranged on the signal path between the power amplifier 10 and the second terminal 6b of the first switch 6 at a position closer to the first switch 6 than the additional filter unit 72 (that is, the position closest to the first switch 6 in the first filter 7).

[0040] The common filter unit 71 includes input-output units 71a, 71b, a plurality of series arm resonators S11 to S16, and a plurality of parallel arm resonators P11 to P16. The input-output unit 71a is connected to the input-output unit 7a of the first filter 7. The input-output unit 71b is connected to the output unit 7c of the first filter 7. The plurality of series arm resonators S11 to S16 are connected in series between the input-output unit 71a and the input-output unit 71b. Figure 1 In the example of , the series arm resonators S11 to S16 are connected in series in this order from the input-output section 71a side toward the input-output section 71b side. The parallel arm resonators P11 and P12 are connected in series between the branch point between the input-output section 71a and the series arm resonator S11 and the ground. The parallel arm resonators P13 and P14 are connected in series between the branch point between the series arm resonators S12 and S13 and the ground. The parallel arm resonators P15 and P16 are connected in series between the branch point between the series arm resonators S14 and S15 and the ground.

[0041] When the first filter 7 is transmitting, the common filter unit 71 uses a plurality of series arm resonators S11 to S16 and a plurality of parallel arm resonators P11 to P16 to limit the transmission signal input to the input-output unit 71b to a signal including the passband of the first communication frequency band and then allows it to pass. Moreover, the common filter unit 71 outputs the transmitted transmission signal from the input-output unit 71a. In addition, when the first filter 7 is receiving, the common filter unit 71 uses a plurality of series arm resonators S11 to S16 and a plurality of parallel arm resonators P11 to P16 to limit the received signal input to the input-output unit 71a to a signal including the passband of the first communication frequency band and then allows it to pass. Moreover, the common filter unit 71 outputs the received signal from the input-output unit 71b.

[0042] exist Figure 1In the example, the common filter unit 71 is configured such that the resonator KS1 at the end of the common filter unit 71 on the first switch 6 side is a parallel arm resonator P11, P12. However, the common filter unit 71 may be configured such that the resonator KS1 is a series arm resonator.

[0043] The additional filter unit 72 is a filter (e.g., a transmission filter) used for one of transmission and reception (only for transmission in Embodiment 1). The additional filter unit 72 has a passband including the first communication frequency band. The additional filter unit 72 is connected between the input unit 7b and the output unit 7c of the first filter 7. That is, the additional filter unit 72 is connected between the output unit 10b of the power amplifier 10 and the common filter unit 71. The additional filter unit 72 is not provided on the second signal path L2 (receiving path) from the common filter unit 71 to the low noise amplifier 11.

[0044] The additional filter unit 72 includes an input unit 72a, an output unit 72b, a plurality of series arm resonators S21 to S24, and a plurality of parallel arm resonators P21 to P24. The input unit 72a is connected to the input unit 7b of the first filter 7. The output unit 72b is connected to the input-output unit 71b of the common filter unit 71 via the output unit 7c of the first filter 7. The plurality of series arm resonators S21 to S24 are connected in series between the input unit 72a and the output unit 72b. Figure 1 In the example of , the series arm resonators S21 to S24 are connected in series in this order from the input portion 72a side toward the output portion 72b side. The parallel arm resonators P21 and P22 are connected in series between the branch point between the output portion 72b and the series arm resonator S21 and the ground. The parallel arm resonators P22 and P24 are connected in series between the branch point between the series arm resonators S22 and S23 and the ground.

[0045] The additional filter unit 72 uses a plurality of series arm resonators S21 to S24 and a plurality of parallel arm resonators P21 to P24 to limit the transmission signal input to the input unit 72a to a signal having a passband including the first communication frequency band and pass the signal through the passband, and outputs the passed transmission signal from the output unit 72b.

[0046] The second filter 8 is a transmission filter having a communication band including a transmission band of a second communication band (e.g., Band 3). The second communication band is a communication band different from the first communication band. The second filter 8 has an input section 8a and an output section 8b. The input section 8a is connected to the external terminal 5d via the power amplifier 25. The output section 8b is connected to the second terminal 6b of the first switch 6. The second filter 8 inputs a transmission signal output from the power amplifier 25 from the input section 8a, limits the input transmission signal to a signal of the transmission band of the second communication band, and passes the transmitted signal, and outputs the transmitted signal from the output section 8b.

[0047] The second filter 9 is a receiving filter for a communication band that is set to include a receiving band of a second communication band (e.g., Band 3). The second filter 9 has an input portion 9a and an output portion 9b. The input portion 9a is connected to the second terminal 6b of the first switch 6. The output portion 9b is connected to the external terminal 5e via a low-noise amplifier 26. The second filter 9 inputs a received signal output from the second terminal 6b of the first switch 6 from the input portion 9a, limits the input received signal to a signal of the receiving band of the second communication band, and passes the received signal, and outputs the received signal from the output portion 9b.

[0048] The power amplifier 10 is connected between the external terminal 5b and the first filter 7. The power amplifier 10 has an input section 10a and an output section 10b. The input section 10a is connected to the external terminal 5b. The output section 10b is connected to the input section 7b of the first filter 7 via a matching circuit 13. The power amplifier 10 amplifies the transmission signal input from the external terminal 5b to the input section 10a, and outputs the amplified transmission signal from the output section 10b to the first filter 7.

[0049] The low noise amplifier 11 is connected between the output portion 7c (branch point N1) of the first filter 7 and the external terminal 5c. The low noise amplifier 11 has an input portion 11a and an output portion 11b. The input portion 11a is connected to the output portion 7c of the first filter 7 via a matching circuit 14. The output portion 11b is connected to the external terminal 5c. The low noise amplifier 11 amplifies the reception signal input from the output portion 7c of the first filter 7 to the input portion 11a, and outputs the amplified reception signal from the output portion 11b to the external terminal 5c.

[0050] The power amplifier 25 is connected between the external terminal 5d and the second filter 8. The power amplifier 25 has an input section 25a and an output section 25b. The input section 25a is connected to the external terminal 5d. The output section 25b is connected to the input section 8a of the second filter 8. The power amplifier 25 amplifies the transmission signal input from the external terminal 5d to the input section 25a, and outputs the amplified transmission signal from the output section 25b to the second filter 8.

[0051] The low noise amplifier 26 is connected between the external terminal 5e and the second filter 9. The low noise amplifier 26 has an input portion 26a and an output portion 26b. The input portion 26a is connected to the output portion 9b of the second filter 9. The output portion 26b is connected to the external terminal 5e. The low noise amplifier 26 amplifies the reception signal input from the second filter 9 to the input portion 26a, and outputs the amplified reception signal from the output portion 26b to the external terminal 5e.

[0052] The matching circuit 12 is connected between the second terminal 6b of the first switch 6 and the first filter 7. The matching circuit 12 is a matching circuit for achieving impedance matching between the first switch 6 and the first filter 7. The matching circuit 12 includes, for example, an inductor connected between a signal path between the second terminal 6b of the first switch 6 and the input / output section 7a of the first filter 7 and ground.

[0053] The matching circuit 13 is connected between the power amplifier 10 and the additional filter unit 72 of the first filter 7. The matching circuit 13 is a matching circuit for achieving impedance matching between the power amplifier 10 and the additional filter unit 72. The matching circuit 13 includes an inductor connected in series between the power amplifier 10 and the additional filter unit 72, for example.

[0054] The matching circuit 14 is connected between the low noise amplifier 11 and the output portion 7c (branch point N1) of the first filter 7. The matching circuit 14 is a matching circuit for achieving impedance matching between the low noise amplifier 11 and the common filter portion 71 of the first filter 7. The matching circuit 14 includes, for example, an inductor connected in series between the low noise amplifier 11 and the output portion 7c of the first filter 7.

[0055] The controller 15 controls the electronic components (e.g., the first switch 6, the power amplifiers 10 and 25, and the low noise amplifiers 11 and 26) of the high frequency module 1 according to the control signal from the signal processing circuit 2. The controller 15 is electrically connected to the above-mentioned electronic components. In addition, the controller 15 is connected to the signal output unit of the signal processing circuit 2 via the external terminal 5f. The controller 15 controls the above-mentioned electronic components according to the control signal input from the signal processing circuit 2 to the external terminal 5f.

[0056] (4) Operation of high-frequency module 1

[0057] (4-1) Operation of the First Filter 7

[0058] The first filter 7 is used for both transmission and reception, and the transmission signal and the reception signal pass through the first filter 7 in TDD. In the first embodiment, the first filter 7 passes the transmission signal and the reception signal of the first communication frequency band in TDD.

[0059] In more detail, when the first filter 7 performs TDD transmission (i.e., operates as a transmission filter), the power amplifier 10 operates and the low noise amplifier 11 does not operate. When the low noise amplifier 11 does not operate, a predetermined internal switch of the low noise amplifier 11 is turned off. Thus, the low noise amplifier 11 is electrically separated from the second signal path L2.

[0060] Furthermore, when the first filter 7 performs TDD transmission, the transmission signal output from the power amplifier 10 passes through the matching circuit 13, the additional filter unit 72 of the first filter 7, the branch point N1, and the common filter unit 71 in sequence, and is output to the second terminal 6b of the first switch 6. In this case, since the low-noise amplifier 11 does not operate, the predetermined internal switch of the low-noise amplifier 11 is turned off, and the low-noise amplifier 11 is electrically separated from the second signal path L2. As a result, the transmission signal is suppressed from flowing from the branch point N1 to the low-noise amplifier 11 side.

[0061] In addition, when the first filter 7 performs the TDD reception operation (i.e., operates as a reception filter), the low noise amplifier 11 operates. Moreover, when the first filter 7 performs the TDD reception operation, the reception signal output from the second terminal 6b of the first switch 6 passes through the common filter unit 71 of the first filter 7, the branch point N1, and the low noise amplifier 11, and is output to the external terminal 5c. In addition, a switch (e.g., a band selection switch) may be provided between the power amplifier 10 and the inductor 13, and when the first filter 7 performs the TDD reception operation, the switch is disconnected, thereby electrically separating the power amplifier 10 from the additional filter unit 72. Thus, it is possible to suppress the reception signal from flowing from the branch point N1 to the power amplifier 10 side.

[0062] (4-2) Operation of the High-Frequency Module 1 When Communicating Simultaneously by the First Communication and the Second Communication

[0063] The high-frequency module 1 simultaneously performs a first communication using a first communication frequency band and a second communication using a second communication frequency band. In the first communication, as described above, the first filter 7 is used to transmit a transmission signal of the first communication frequency band and to receive a reception signal of the first communication frequency band by TDD. In the second communication, the transmission signal of the second communication frequency band using the second filter 8 and the reception signal of the second communication frequency band using the second filter 9 are transmitted by FDD (Frequency Division Duplex).

[0064] In more detail, when the high-frequency module 1 performs the above-mentioned first communication, the first terminal 6a of the first switch 6 is always connected to both the second terminal 6b and the third terminal 6c. Moreover, in this connection state, the high-frequency module 1 uses the first filter 7 to transmit the transmission signal of the first communication frequency band and receive the reception signal of the first communication frequency band by TDD as described above. In more detail, when the high-frequency module 1 uses the first filter 7 to transmit the transmission signal of the first communication frequency band by TDD, the transmission signal is input from the signal processing circuit 2 to the external terminal 5b of the high-frequency module 1. Then, the transmission signal is transmitted from the external terminal 5b through the power amplifier 10, the additional filter unit 72, the common filter unit 71 and the first switch 6 in sequence and then transmitted from the antenna 3. In addition, when the high-frequency module 1 uses the first filter 7 to receive the reception signal of the first communication frequency band by TDD, the high-frequency module 1 uses the antenna 3 to receive the reception signal of the first communication frequency band. Then, the reception signal is output to the external terminal 5c after passing through the first switch 6, the common filter unit 71 of the first filter 7, the branch point N1 and the low-noise amplifier 11 in sequence.

[0065] In addition, when the high-frequency module 1 performs the above-mentioned second communication, the first terminal 6a of the first switch 6 is connected to both the second terminal 6b and the third terminal 6c. Moreover, when the high-frequency module 1 uses the second filter 8 to send the transmission signal of the second communication frequency band in the above-mentioned FDD, the transmission signal is input from the signal processing circuit 2 to the external terminal 5d of the high-frequency module 1. Then, the transmission signal is transmitted from the external terminal 5d through the power amplifier 25, the second filter 8 and the first switch 6 in sequence and then transmitted from the antenna 3. In addition, when the high-frequency module 1 uses the second filter 9 to receive the reception signal of the second communication frequency band in the above-mentioned FDD, the reception signal of the second communication frequency band is received by the antenna 3. Then, the reception signal is output to the external terminal 5e after passing through the first switch 6, the second filter 9 and the low-noise amplifier 26 in sequence.

[0066] (4-3) Phase of the signal passing through the second filters 8 and 9

[0067] In the high frequency module 1, the common filter unit 71 is connected between the additional filter unit 72 and the first switch 6. Therefore, the resonator KS1 of the end of the first filter 7 on the first switch 6 side (i.e., the end of the common filter unit 71 on the first switch 6 side) in the TDD transmission operation and the reception operation in the first filter 7 can be made the same. Thus, the change of the impedance of the first filter 7 side when viewed from the second filter 8, 9 between the TDD transmission operation and the TDD reception operation in the first filter 7 can be suppressed. Consider the case where the first communication using the first filter 7 (i.e., the first communication using the first communication band) and the second communication using the second filters 8, 9 (i.e., the second communication using the second communication band) are simultaneously performed in FDD. In this case, the following situation can be reduced: the phase of the signal (the signal of the second communication band) passing through the second filters 8, 9 changes between the TDD transmission operation and the TDD reception operation in the first filter 7.

[0068] In addition, in the operation of TDD transmission and reception in the first filter 7, the matching circuit 12 between the common filter unit 71 and the second terminal 6b of the first switch 6 is shared. Thus, the change in impedance of the first filter 7 side when viewed from the second filter 8, 9 between the operation of TDD transmission and reception in the first filter 7 can also be suppressed. Consider the case where the first communication using the first filter 7 (i.e., the first communication using the first communication band) and the second communication using the second filters 8, 9 (i.e., the second communication using the second communication band) are simultaneously performed in FDD. In this case, the following situation can also be reduced: the phase of the signal (signal of the second communication band) passing through the second filters 8, 9 changes between the operation of TDD transmission and reception in the first filter 7.

[0069] (5) Effect

[0070] As described above, the high-frequency module 1 involved in the first embodiment can simultaneously perform the first communication using the first communication frequency band and the second communication using the second communication frequency band. The high-frequency module 1 includes a first switch 6, a first filter 7, second filters 8, 9, a power amplifier 10, and a low-noise amplifier 11. The first switch 6 has a first terminal 6a, a second terminal 6b, and a third terminal 6c. The first terminal 6a is connected to the antenna terminal 5a. The second terminal 6b and the third terminal 6c can switch between connection and non-connection with the first terminal 6a. The first filter 7 is connected to the second terminal 6b and has a passband including the first communication frequency band. The second filter 8, 9 is connected to the third terminal 6c and has a passband including the second communication frequency band. The first filter 7 has a common filter unit 71 and an additional filter unit 72. The common filter unit 71 is used for both sending and receiving, and the sending signal and the receiving signal pass through the common filter unit 71 in TDD. The additional filter unit 72 is used for one of sending and receiving. The additional filter unit 72 is connected between the common filter unit 71 and the first amplifier, which is one of the power amplifier 10 and the low noise amplifier 11. The second amplifier, which is the other of the power amplifier 10 and the low noise amplifier 11, is connected to the second signal path L2 branched from the first signal path L1 between the common filter unit 71 and the additional filter unit 72. The common filter unit 71 is connected between the additional filter unit 72 and the first switch 6.

[0071] According to this structure, the common filter unit 71 is connected between the additional filter unit 72 and the first switch 6. Therefore, the structure of the resonator KS1 at the end of the first filter 7 on the first switch 6 side (that is, the end of the common filter unit 71 on the first switch 6 side) in the TDD transmission operation and the reception operation of the first filter 7 can be made the same, thereby suppressing the change in impedance of the first filter 7 when viewed from the second filter 8, 9 side between the TDD transmission operation and the TDD reception operation of the first filter 7. Consider the case where the first communication using the first filter 7 and the second communication using the second filter 8, 9 are performed simultaneously. In this case, the following situation can be reduced: the phase of the signal (signal of the second communication frequency band) passing through the second filter 8, 9 changes between the TDD transmission operation and the TDD reception operation of the first filter 7. That is, the change amount of the passband phase of the second filter 8, 9 corresponding to the state of the first filter 7 can be reduced when the first filter 7 and the second filter 8, 9 communicate simultaneously.

[0072] In addition, the additional filter unit 72 is not provided on the second signal path L2 (receiving path) from the common filter unit 71 to the low noise amplifier 11. According to this structure, the following situation is envisioned: the additional filter unit 72 constitutes a part of the transmission filter implemented by the first filter 7. In this case, the receiving filter implemented by the first filter 7 can be integrated into the common filter unit 71. This can contribute to the miniaturization of the high-frequency module 1.

[0073] In addition, the additional filter unit 72 is connected between the power amplifier 10 and the common filter unit 71. The low noise amplifier 11 is connected to the second signal path L2. According to this structure, the additional filter unit 72 can constitute a part of the first filter 7 that functions as a transmission filter. Thus, by adding the filter unit 72, the number of resonators when the first filter 7 functions as a transmission filter can be made larger than the number of resonators when the first filter 7 functions as a reception filter. Generally speaking, compared with the received signal, the power of the transmission signal is large and the noise is large. In this case, the attenuation characteristics of the transmission filter can also be set to be able to fully attenuate the noise of the transmission signal.

[0074] The communication device 100 according to the first embodiment includes a high frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high frequency module 1 and processes the high frequency signal. With this configuration, the communication device 100 that can achieve the above-mentioned effect of the high frequency module 1 can be provided.

[0075] (6) Modification

[0076] A modification of Embodiment 1 is described. In the following description, the same components as those of Embodiment 1 are sometimes denoted by the same reference numerals as those of Embodiment 1 and the description thereof is omitted, and only the parts different from Embodiment 1 are described. The following modifications may also be implemented in combination.

[0077] (6-1) Modification 1

[0078] In Embodiment 1, the power amplifier 10 is connected to the additional filter section 72, and the low noise amplifier 11 is connected to the second signal path L2 branched from the first signal path L1 between the common filter section 71 and the additional filter section 72. As a variation 1 of Embodiment 1, it is also possible that the low noise amplifier 11 is connected to the additional filter section 72, and the power amplifier 10 is connected to the second signal path L2. In this case, the additional filter section 72 is connected between the low noise amplifier 11 and the common filter section 71, and the power amplifier 10 is connected to the second signal path L2. The additional filter section 72 in this case is a receiving filter. That is to say, the additional filter section 72 is not limited to a transmitting filter, but may also be a receiving filter, in which case the additional filter section 72 is connected to the low noise amplifier 11.

[0079] (6-2) Modification 2

[0080] Regarding the high frequency module 1 of Embodiment 1, the case where the second communication using the second communication frequency band is performed by FDD is exemplified. More specifically, the case where the transmission signal of the second communication frequency band using the second filter 8 and the reception signal of the second communication frequency band using the second filter 9 are transmitted by FDD are exemplified. However, the second communication using the second communication frequency band may also be performed by TDD.

[0081] (Implementation Method 2)

[0082] Reference Figure 2 A high frequency module 1 according to Embodiment 2 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as those in Embodiment 1 and the description thereof may be omitted, and only the parts different from Embodiment 1 may be described.

[0083] (1) Structure

[0084] like Figure 2 As shown, the high-frequency module 1 according to the second embodiment is configured similarly to the high-frequency module 1 of the first embodiment except that the high-frequency module 1 further includes a second switch 16 .

[0085] The first filter 7 further includes an output section 7d and an input section 7e. The output section 7d outputs an output signal of the output section 72b of the additional filter section 72 to the outside of the first filter 7 (the terminal 16a of the second switch 16 described later). The output section 7d is connected to the terminal 16a of the second switch 16 described later. In addition, the output section 7d is connected to the output section 72b of the additional filter section 72. The input section 7e inputs a signal output from the terminal 16b of the second switch 16 described later into the inside of the first filter 7. The input section 7e is connected to the terminal 16b of the second switch 16 described later. In addition, the input section 7e is connected to the branch point N1 of the first filter 7.

[0086] The second switch 16 is connected between the input section 7e and the output section 7d of the first filter 7 (i.e., between the branch point N1 and the additional filter section 72), and switches the connection and disconnection between the common filter section 71 and the additional filter section 72. The second switch 16 has a terminal 16a (fourth terminal) and a terminal 16b (fifth terminal). The terminal 16a is connected to the output section 7d of the first filter 7. The terminal 16b is connected to the input section 7e, and can switch the connection and disconnection with the terminal 16a.

[0087] When the first filter 7 performs TDD transmission (i.e., when the power amplifier 10 operates), the terminals 16a and 16b of the second switch 16 are connected to each other. Thus, when the first filter 7 performs TDD transmission, the output signal (transmission signal) of the power amplifier 10 passes through the additional filter unit 72, the second switch 16, the branch point N1, the common filter unit 71, and the first switch 6 in sequence and is transmitted from the antenna 3.

[0088] In addition, when the first filter 7 is in operation for TDD reception (i.e., when the power amplifier 10 is not in operation), the terminals 16a and 16b of the second switch 16 are not connected to each other. Thus, the reception signal received by the antenna 3 is output to the external terminal 5c after passing through the first switch 6, the common filter unit 71, the branch point N1, and the low noise amplifier 11 in sequence. At this time, since the terminals 16a and 16b of the second switch 16 are not connected, it is possible to prevent the reception signal from flowing from the branch point N1 to the additional filter unit 72 side.

[0089] (2) Example of double-sided mounting structure of mounting substrate

[0090] like Figure 3 As shown, the high-frequency module 1 further includes a mounting substrate 20 (substrate), a first chip 21 (chip), and a second chip 22 .

[0091] The mounting substrate 20 is a substrate for mounting a plurality of electronic components of the high-frequency module 1, and is, for example, a rectangular plate. The plurality of electronic components include a first switch 6, a second switch 16, a first filter 7, second filters 8 and 9, power amplifiers 10 and 25, low-noise amplifiers 11 and 26, matching circuits 12 to 14, and a controller 15. In Embodiment 2, the first filter 7 is formed by a first chip 21, and the first switch 6, the second switch 16, and the low-noise amplifiers 11 and 26 are formed by a second chip 22. Figure 3 In the example of FIG. 1 , only the first chip 21 , the second chip 22 , and the power amplifier 10 are illustrated among the plurality of electronic components, and illustration of other electronic components is omitted.

[0092] The mounting substrate 20 is a substrate (multilayer substrate) having multiple layers including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D1 of the mounting substrate 20. The multiple conductive layers are formed in a predetermined pattern determined for each layer.

[0093] The mounting substrate 20 has a first main surface 20a and a second main surface 20b facing each other in the thickness direction D1 of the mounting substrate 20. A plurality of pads 20p are provided on the first main surface 20a of the mounting substrate 20. A plurality of pads 20q are provided on the second main surface 20b of the mounting substrate 20. The plurality of pads 20p of the first main surface 20a are connected to other pads 20p of the plurality of pads 20p of the first main surface 20a via a circuit in the mounting substrate 20 (i.e., a circuit composed of via electrodes and a conductive layer). In addition, the plurality of pads 20p of the first main surface 20a are connected to a certain pad 20q of the plurality of pads 20q of the second main surface 20b via a circuit in the mounting substrate 20.

[0094] At least the first chip 21 and the power amplifier 10 among the plurality of electronic components are arranged (mounted) on the first main surface 20a of the mounting substrate 20. In addition, at least the second chip 22 among the plurality of electronic components is arranged (mounted) on the second main surface 20b of the mounting substrate 20. Figure 3 In the example, as an example, only the first chip 21 and the power amplifier 10 are shown on the first main surface 20 a of the mounting substrate 20 , and only the second chip 22 is shown on the second main surface 20 b of the mounting substrate 20 .

[0095] The first chip 21 is an IC (Integrated Circuit) chip including the first filter 7. That is, the common filter section 71 and the additional filter section 72 of the first filter 7 are provided on the same chip (first chip 21). The first chip 21 is arranged (mounted) at a predetermined position on the first main surface 20a of the mounting substrate 20. The first chip 21 is, for example, a rectangular plate in a plan view.

[0096] The first chip 21 has a chip body 211 and a plurality of electrodes 212. The chip body 211 is, for example, a rectangular plate-shaped when viewed from above. The chip body 211 is a portion of the first chip 21 other than the plurality of electrodes 212. The plurality of electrodes 212 are provided on a facing surface 211s of the chip body 211 that faces the mounting substrate 20. The plurality of electrodes 212 constitute the input / output portion 7a, the input portion 7b, the output portion 7c, the output portion 7d, and the input portion 7e of the first filter 7. The plurality of electrodes 212 are connected to a certain pad among the plurality of pads 20p provided on the first main surface 20a of the mounting substrate 20 via solder 24.

[0097] The second chip 22 is an IC chip including the first switch 6, the second switch 16, and the low noise amplifiers 11 and 26. That is, the first switch 6, the second switch 16, and the low noise amplifiers 11 and 26 are provided in the same chip (the second chip 22). Figure 3 In FIG. 1 , only the first switch 6 and the low noise amplifiers 11 and 26 are shown by dotted lines inside the second chip 22. The second chip 22 is arranged (mounted) at a predetermined position on the first main surface 20a of the mounting substrate 20. The second chip 22 is, for example, a rectangular plate in a plan view.

[0098] The second chip 22 has a chip body 221 and a plurality of electrodes 222. The chip body 221 is, for example, a rectangular plate-shaped when viewed from above. The chip body 221 is a portion of the second chip 22 other than the plurality of electrodes 222. The plurality of electrodes 222 are disposed on a facing surface 221s of the chip body 221 that faces the mounting substrate 20. The plurality of electrodes 222 include electrodes connected to the first terminal 6a, the second terminal 6b, or the third terminal 6c of the first switch 6, and electrodes connected to the input portion 11a of the low-noise amplifier 11. The plurality of electrodes 222 are connected to a certain pad among the plurality of pads 20q disposed on the second main surface 20b of the mounting substrate 20 via solder 24.

[0099] An electrode 212 of the first chip 21 is electrically connected to an electrode 222 of the second chip 22 (for example, an electrode connected to the second terminal 6b of the first switch 6) via a pad 20p provided on the first main surface 20a of the mounting substrate 20, a circuit h1 inside the mounting substrate 20, and a pad 20q provided on the second main surface 20b of the mounting substrate 20. In addition, another electrode 212 of the first chip 21 is electrically connected to another electrode 222 of the second chip 22 (for example, an electrode connected to the input portion 11a of the low noise amplifier 11) via another pad 20p provided on the first main surface 20a of the mounting substrate 20, a circuit h2 inside the mounting substrate 20, and another pad 20q provided on the second main surface 20b of the mounting substrate 20. In addition, another electrode 212 of the first chip 21 is electrically connected to the output portion 10b of the power amplifier 10 via another pad 20p of the first main surface 20a of the mounting substrate 20 and a circuit h3 inside the mounting substrate 20.

[0100] (3) Configuration Relationship of the Second Switch 16 in the First Chip 21 and the Second Chip 22

[0101] Reference Figure 3 , the arrangement relationship between the first chip 21 and the second switch 16 in the second chip 22 in the thickness direction D1 of the mounting substrate 20 will be described.

[0102] like Figure 3 As shown, the first chip 21 is arranged (mounted) on the first main surface 20 a of the mounting substrate 20 , and the second chip 22 is arranged on the second main surface 20 b of the mounting substrate 20 .

[0103] In the thickness direction D1 of the mounting substrate 20, the first chip 21 overlaps with the first switch 6 inside the second chip 22. Here, the so-called "the first chip 21 overlaps with the first switch 6" may be that the first chip 21 overlaps with at least a portion of the first switch 6, or at least a portion of the first chip 21 overlaps with the first switch 6. By overlapping the first chip 21 with the first switch 6 in the thickness direction D1 of the mounting substrate 20 in this way, the circuit h1 between the first chip 21 and the first switch 6 can be shortened. As a result, the loss in the circuit h1 between the first chip 21 and the first switch 6 can be suppressed.

[0104] (4) Arrangement Relationship of Multiple Electrodes 212 of First Chip 21

[0105] Reference Figure 4 The arrangement of the plurality of electrodes 212 of the first chip 21 will be described.

[0106] As described above, the first chip 21 has a plurality of ( Figure 4 In the example of FIG. 6 , there are 6 electrodes 212. Figure 4 As shown, the six electrodes 212 include a first electrode 212 a to a fourth electrode 212 d. The six electrodes 212 are arranged vertically and horizontally on the facing surface 211 s of the first chip 21 .

[0107] exist Figure 4 In the example of , as an example, six electrodes 212 are arranged in three rows and two columns. The first electrode 212a is arranged in the first row and the first column. The second electrode 212b is arranged in the first row and the second column. The third electrode 212c is arranged in the second row and the first column. The fourth electrode 212d is arranged in the third row and the second column.

[0108] like Figure 2 As shown, the first electrode 212a constitutes the input portion 7b of the first filter 7. The second electrode 212b constitutes the output portion 7d of the first filter 7. The third electrode 212c integrates the output portion 7c and the input portion 7e of the first filter 7. The fourth electrode 212d constitutes the input and output portion 7a of the first filter 7.

[0109] like Figure 4 As shown, the first electrode 212a is connected to the output portion 10b of the power amplifier 10 via a circuit. The second electrode 212b is connected to the terminal 16a (fourth terminal) of the second switch 16 via a circuit. The third electrode 212c is connected to the input portion 11a of the low noise amplifier 11 via a circuit. The fourth electrode 212d is connected to the second terminal 6b of the first switch 6 via a circuit. The above-mentioned circuits are circuits provided on the mounting substrate 20.

[0110] like Figure 4 As shown, when viewed from the thickness direction of the first chip 21 (i.e., the thickness direction D1 of the mounting substrate 20), the second electrode 212b and the third electrode 212c are arranged between the first electrode 212a and the fourth electrode 212d in the direction M1 connecting the first electrode 212a and the fourth electrode 212d. Thus, it is possible to provide the common filter unit 71 and the additional filter unit 72 in the first chip 21 and to reduce the area of ​​the first chip 21.

[0111] (5) Effect

[0112] The high-frequency module 1 according to the second embodiment is further provided with a second switch 16 in the high-frequency module 1 according to the first embodiment. The second switch 16 is connected between the branch point N1 of the first signal path L1 and the second signal path L2 and the additional filter section 72, and switches the connection and disconnection between the common filter section 71 and the additional filter section 72. According to this structure, by switching the second switch 16 to disconnection, it is possible to prevent a part of the signal flowing through the common filter section 71, the branch point N1, and the second signal path L2 from flowing from the branch point N1 to the additional filter section 72 side. Thus, the loss of the signal can be suppressed.

[0113] In addition, the common filter unit 71 and the additional filter unit 72 are provided in the same chip 21. According to this structure, it is possible to contribute to the miniaturization of the high-frequency module 1.

[0114] In addition, the high-frequency module 1 further includes a mounting substrate 20 (substrate), and the mounting substrate 20 has a first main surface 20a and a second main surface 20b facing each other. The first chip 21 (chip) is arranged on the first main surface 20a of the mounting substrate 20. The first switch 6 is arranged on the second main surface 20b of the mounting substrate 20. In the thickness direction D1 of the mounting substrate 20, the first chip 21 overlaps the first switch 6. According to this structure, the circuit h1 between the first chip 21 and the first switch 6 can be shortened. As a result, the loss in the circuit h1 between the first chip 21 and the first switch 6 can be suppressed.

[0115] In addition, the second switch 16 has a terminal 16a (fourth terminal) and a terminal 16b (fifth terminal). The terminal 16a is connected to the additional filter unit 72. The terminal 16b is connected to the branch point N1 and can switch between connection and non-connection with the terminal 16a. The first chip 21 has a first electrode 212a, a second electrode 212b, a third electrode 212c, and a fourth electrode 212d. The first electrode 212a is connected to the power amplifier 10 (first amplifier). The second electrode 212b is connected to the terminal 16a. The third electrode 212c is connected to the terminal 16b. The fourth electrode 212d is connected to the second terminal 6b of the first switch 6. When viewed from the thickness direction D1 of the first chip 21, the second electrode 212b and the third electrode 212c are arranged between the first electrode 212a and the fourth electrode 212d in the direction M1 connecting the first electrode 212a and the fourth electrode 212d. According to this configuration, it is possible to provide the common filter unit 71 and the additional filter unit 72 in the first chip 21 while reducing the area of ​​the first chip 21 .

[0116] (6) Modification

[0117] Next, a modification of Embodiment 2 is described. In the following description, the same components as those in Embodiment 2 are sometimes denoted by the same reference numerals as those in Embodiment 2 and the description thereof is omitted, and only the parts different from Embodiment 2 are described. In addition, the following modifications may be implemented in combination.

[0118] (6-1) Modification 1

[0119] Regarding the high frequency module 1 according to the first modification of the second embodiment, in the high frequency module 1 according to the second embodiment, the second switch 16 is replaced with the changeover switch 40 . That is, the high frequency module 1 according to the second modification of the second embodiment includes the changeover switch 40 .

[0120] The switch 40 is used to selectively switch the connection between the common filter unit 71 and the additional filter unit 72 and the connection between the common filter unit 71 and the second signal path L2 .

[0121] In more detail, the switch 40 has a common terminal 40a, a first selection terminal 40b, and a second selection terminal 40c. The common terminal 40a is selectively connected to one of the first selection terminal 40b and the second selection terminal 40c. The common terminal 40a is connected to the input portion 7e of the first filter 7. The first selection terminal 40b is connected to the output portion 7d of the first filter 7. The second selection terminal 40c is connected to the second signal path L2. That is, the second selection terminal 40c is connected to the input portion 11a of the low noise amplifier 11 via the matching circuit 14.

[0122] In Modification 1, the switch 40 is provided in the first signal path L1 between the input / output section 71b of the common filter section 71 and the output section 72b of the additional filter section 72. Furthermore, the second signal path L2 is branched from the first signal path L1 by switching the switch 40. Therefore, in Modification 1, the branch point N1 and the output section 7c of Embodiment 1 are omitted.

[0123] In the modification 1, when the first filter 7 performs TDD reception, the common terminal 40a of the switching switch 40 is selectively connected to the second selection terminal 40c. That is, by switching the switch 40, the common filter unit 71 and the additional filter unit 72 are not connected, and the common filter unit 71 is connected to the second signal path L2. Thus, the reception signal received by the antenna 3 is output from the output terminal 5c via the first switch 6, the common filter unit 71, the switching switch 40, the matching circuit 14, and the low noise amplifier 11. At this time, the receiving signal can be prevented from flowing from the common filter unit 71 to the additional filter unit 72 side by switching the switch 40.

[0124] In addition, when the first filter 7 performs TDD transmission, the common terminal 40a of the switching switch 40 is selectively connected to the first selection terminal 40b. That is, by switching the switch 40, the common filter unit 71 is connected to the additional filter unit 72, and the common filter unit 71 is no longer connected to the second signal path L2. As a result, the output signal (transmission signal) of the power amplifier 10 is transmitted from the antenna 3 after passing through the additional filter unit 72, the switching switch 40, the common filter unit 71 and the first switch 6. At this time, the transmission signal can be prevented from flowing from the additional filter unit 72 to the second signal path L2 by switching the switch 40.

[0125] (6-2) Modification 2

[0126] In Embodiment 2, the first chip 21 is arranged on the first main surface 20a of the mounting substrate 20 (i.e., the main surface on which the power amplifier 10 is arranged). However, the first chip 21 may be arranged on the second main surface 20b of the mounting substrate 20. In this case, the first chip 21 may also be arranged to overlap with the power amplifier 10 in the thickness direction D1 of the mounting substrate 20. In addition, the so-called "the first chip 21 overlaps with the power amplifier 10" may be that the first chip 21 overlaps with at least a portion of the power amplifier 10, or at least a portion of the first chip 21 overlaps with the power amplifier 10.

[0127] (6-3) Modification 3

[0128] In Embodiment 2, the common filter unit 71 and the additional filter unit 72 are arranged on the first principal surface 20a of the mounting substrate 20 (that is, the same principal surface as each other). However, the common filter unit 71 and the additional filter unit 72 may be arranged on different principal surfaces of the mounting substrate 20. That is, the common filter unit 71 may be arranged on one principal surface of the first principal surface 20a and the second principal surface 20b of the mounting substrate 20, and the additional filter unit 72 may be arranged on the other principal surface of the first principal surface 20a and the second principal surface 20b of the mounting substrate 20. For example, the common filter unit 71 may be arranged on the first principal surface 20a of the mounting substrate 20 (that is, the principal surface on which the power amplifier 10 is arranged), and the additional filter unit 72 may be arranged on the second principal surface 20b of the mounting substrate 20.

[0129] (6-4) Modification 4

[0130] In Embodiment 2, the additional filter unit 72 constitutes a part of the transmission filter. In this case, the additional filter unit 72 may also be arranged between the power amplifier 10 and the common filter unit 71 on the first main surface 20a of the mounting substrate 20. In the case where the additional filter unit 72 constitutes a part of the transmission filter, the additional filter unit 72 is connected to the power amplifier 10 via a circuit. Therefore, by arranging the additional filter unit 72 between the common filter unit 71 and the power amplifier 10 as described above, the circuit connecting the additional filter unit 72 and the power amplifier 10 can be shortened.

[0131] (Way)

[0132] The following aspects are disclosed in this specification.

[0133] A high frequency module (1) of a first mode can simultaneously perform first communication using a first communication frequency band and second communication using a second communication frequency band. The high frequency module (1) comprises a first switch (6), a first filter (7), a second filter (8, 9), a power amplifier (10) and a low noise amplifier (11). The first switch (6) comprises a first terminal (6a), a second terminal (6b) and a third terminal (6c). The first terminal (6a) is connected to an antenna terminal (5a). The second terminal (6b) and the third terminal (6c) can switch between connection and disconnection with the first terminal (6a). The first filter (7) is connected to the second terminal (6b) and has a passband including the first communication frequency band. The second filter (8, 9) is connected to the third terminal (6c) and has a passband including the second communication frequency band. The first filter (7) comprises a common filter section (71) and an additional filter section (72). The common filter section (71) is used for both transmission and reception, and the transmission signal and the reception signal pass through the common filter section (71) in a time division duplex manner. The additional filter unit (72) is used for one of transmission and reception. The additional filter unit (72) is connected between the common filter unit (71) and a first amplifier which is one of the power amplifier (10) and the low noise amplifier (11). The second amplifier which is the other of the power amplifier (10) and the low noise amplifier (11) is connected to a second signal path (L2) branched from a first signal path (L1) between the common filter unit (71) and the additional filter unit (72). The common filter unit (71) is connected between the additional filter unit (72) and the first switch (6).

[0134] According to this structure, the common filter unit (71) is connected between the additional filter unit (72) and the first switch (6). Therefore, the structure of the resonator (KS1) at the end of the first switch (6) side of the first filter (7) (i.e., the end of the first switch (6) side of the common filter unit (71)) in the TDD (time division duplex) transmission operation and the TDD (time division duplex) reception operation in the first filter (7) can be made the same. Thus, the change in the impedance of the first filter (7) when viewed from the second filter (8, 9) side between the TDD transmission operation and the TDD reception operation in the first filter (7) can be suppressed. Consider the case where the first communication using the first filter (7) and the first communication using the second filter (8, 9) are performed simultaneously. In this case, the following situation can be reduced: the phase of the signal (signal of the second communication frequency band) passing through the second filter (8, 9) changes between the TDD transmission operation and the TDD reception operation in the first filter (7). That is, when the first filter (7) and the second filter (8, 9) communicate simultaneously, the variation of the passband phase of the second filter (8, 9) according to the state of the first filter (7) can be reduced.

[0135] The high frequency module (1) of the second embodiment is provided with a second switch (16) in the first embodiment. The second switch (16) is connected between a branch point (N1) between the first signal path (L1) and the second signal path (L2) and the additional filter section (72), and switches between connection and disconnection between the common filter section (71) and the additional filter section (72).

[0136] According to this structure, by switching the second switch (16) to non-connection, a part of the signal flowing through the common filter unit (71), the branch point (N1) and the second signal path (L2) can be prevented from flowing from the branch point (N1) to the additional filter unit (72), thereby suppressing signal loss.

[0137] Regarding the high frequency module (1) of the third aspect, in the second aspect, the common filter unit (71) and the additional filter unit (72) are provided in the same chip (21).

[0138] This structure can contribute to miniaturization of the high-frequency module (1).

[0139] A high-frequency module (1) according to a fourth embodiment is provided in the third embodiment, further comprising a substrate (20), the substrate (20) having a first main surface (20a) and a second main surface (20b) facing each other. A chip (21) is arranged on the first main surface (20a). A first switch (6) is arranged on the second main surface (20b). In a thickness direction (D1) of the substrate (20), the chip (21) and the first switch (6) overlap.

[0140] According to this structure, the circuit (h1) between the chip (21) and the first switch (6) can be shortened, thereby suppressing the loss in the circuit (h1) between the chip (21) and the first switch (6).

[0141] Regarding the high-frequency module (1) of the fifth embodiment, in the third or fourth embodiment, the second switch (16) has a fourth terminal (16a) and a fifth terminal (16b). The fourth terminal (16a) is connected to the additional filter unit (72). The fifth terminal (16b) is connected to the branch point (N1) and can switch between connection and non-connection with the fourth terminal (16a). The chip (21) has a first electrode (212a), a second electrode (212b), a third electrode (212c) and a fourth electrode (212d). The first electrode (212a) is connected to the first amplifier. The second electrode (212b) is connected to the fourth terminal (16a). The third electrode (212c) is connected to the fifth terminal (16b). The fourth electrode (212d) is connected to the second terminal (6b) of the first switch (6). When viewed from above in the thickness direction (D1) of the chip (21), the second electrode (212b) and the third electrode (212c) are arranged between the first electrode (212a) and the fourth electrode (212d) in the direction (M1) connecting the first electrode (212a) and the fourth electrode (212d).

[0142] According to this structure, it is possible to provide a common filter unit (71) and an additional filter unit (72) in the chip (21) while reducing the area of ​​the chip (21).

[0143] A high frequency module (1) according to a sixth aspect is provided with a switch (40) in the first aspect. The switch (40) selectively switches the connection between the common filter unit (71) and the additional filter unit (72) and the connection between the common filter unit (71) and the second signal path (L2).

[0144] According to this structure, the common filter unit (71) can be selectively connected to one of the additional filter unit (72) and the second signal path (L2) by switching the switch (40). Thus, it is possible to prevent a signal (a transmission signal or a reception signal) from flowing to the one of the additional filter unit (72) and the second signal path (L2) that is not connected to the common filter unit (71).

[0145] A high frequency module (1) according to a seventh aspect is characterized in that, in any one of the first to sixth aspects, no additional filter section (72) is provided on a reception path (L2) from the common filter section (71) to the low noise amplifier (11).

[0146] According to this structure, the following situation is envisioned: the additional filter unit (72) constitutes a part of the transmission filter implemented by the first filter (7). In this case, the reception filter implemented by the first filter (7) can be integrated into the common filter unit (71). This can contribute to the miniaturization of the high-frequency module (1).

[0147] The high frequency module (1) of the eighth aspect is characterized in that, in any one of the first to seventh aspects, the additional filter unit (72) is connected between the power amplifier (10) and the common filter unit (71). The low noise amplifier (11) is connected to the second signal path (L2).

[0148] According to this structure, the additional filter unit (72) can constitute a part of the first filter (7) that functions as a transmission filter. Thus, by adding the filter unit (72), the number of resonators when the first filter (7) functions as a transmission filter can be increased compared to the number of resonators when the first filter (7) functions as a reception filter. As a result, the frequency characteristics of the transmission filter can be easily designed compared to the frequency characteristics of the reception filter.

[0149] A communication device (100) of a ninth aspect comprises a high frequency module (1) of any one of the first to eighth aspects and a signal processing circuit (2). The signal processing circuit (2) is connected to the high frequency module (1) and performs signal processing on a high frequency signal.

[0150] According to this structure, a communication device (100) that exerts the above-mentioned effect of the high-frequency module (1) can be provided.

[0151] Description of Reference Numerals

[0152] 1: high frequency module; 2: signal processing circuit; 2a: RF signal processing circuit; 2b: baseband signal processing circuit; 3: antenna; 5a: external terminal (antenna terminal); 5b-5f: external terminal; 6: first switch; 6a: first terminal; 6b: second terminal; 6c: third terminal; 7: first filter; 7a: input and output section; 7b: input section; 7c: output section; 7d: output section; 7e: input section; 8: second filter; 8a: input section; 8b: output section; 9: second filter; 9a: input section 1: input portion; 9b: output portion; 10: power amplifier (first amplifier); 10a: input portion; 10b: output portion; 11: low noise amplifier (second amplifier); 11a: input portion; 11b: output portion; 12-14: matching circuit; 15: controller; 16: second switch; 16a: terminal (fourth terminal); 16b: terminal (fifth terminal); 20: mounting substrate (substrate); 20a: first main surface; 20b: second main surface; 20p, 20q: pads; 21: first chip (chip); 22: second chip; 25: power amplifier; 25a: input; 25b: output; 26: low noise amplifier; 26a: input; 26b: output; 40: switch; 40a: common terminal; 40b: first selection terminal; 40c: second selection terminal; 71: common filter; 71a: input and output; 71b: input and output; 72: additional filter; 72a: input; 72b: output; 100: communication device; 211: chip body; 211s: facing surface ; 212: electrode; 212a: first electrode; 212b: second electrode; 212c: third electrode; 212d: fourth electrode; 221: chip body; 221s: facing surface; 222: electrode; D1: direction; h1~h3: circuit; KS1: resonator; L1: first signal path; L2: second signal path (receiving path); M1: direction; N1: branch point; P11~P16, P21~P24: parallel arm resonators; S11~S16, S21~S24: series arm resonators.

Claims

1. A high-frequency module capable of simultaneously performing first communication using a first communication frequency band and second communication using a second communication frequency band, the high-frequency module comprising: A first switch including a first terminal connected to the antenna terminal, and a second terminal and a third terminal capable of switching between connection and disconnection with the first terminal; a first filter connected to the second terminal and having a passband including the first communication frequency band; a second filter connected to the third terminal and having a passband including the second communication frequency band; Power amplifier; as well as Low noise amplifier, Wherein, the first filter has: a common filter section used for both transmission and reception, through which a transmission signal and a reception signal pass in a time division duplex manner; and Add a filter unit, which is used for one of the transmission and reception, The additional filter unit is connected between the common filter unit and a first amplifier that is one of the power amplifier and the low noise amplifier. A second amplifier, which is the other of the power amplifier and the low noise amplifier, is connected to a second signal path branched from the first signal path between the common filter unit and the additional filter unit. The common filter unit is connected between the additional filter unit and the first switch.

2. The high frequency module according to claim 1, wherein: The device further includes a second switch connected between a branch point between the first signal path and the second signal path and the additional filter section, and switches between connection and disconnection between the common filter section and the additional filter section.

3. The high frequency module according to claim 2, wherein: The common filter unit and the additional filter unit are provided in the same chip.

4. The high frequency module according to claim 3, wherein: The invention further comprises a substrate having a first main surface and a second main surface facing each other, The chip is arranged on the first main surface, The first switch is arranged on the second main surface, The chip overlaps with the first switch in a thickness direction of the substrate.

5. The high frequency module according to claim 3 or 4, wherein: The second switch has: a fourth terminal connected to the additional filter unit; and a fifth terminal connected to the branch point and capable of switching between connection and disconnection with the fourth terminal; The chip has: a first electrode connected to the first amplifier; a second electrode connected to the fourth terminal; a third electrode connected to the fifth terminal; as well as a fourth electrode connected to the second terminal of the first switch, When viewed in plan from the thickness direction of the chip, the second electrode and the third electrode are arranged between the first electrode and the fourth electrode in a direction connecting the first electrode and the fourth electrode.

6. The high frequency module according to claim 1, wherein: A switch is provided for selectively switching the connection between the common filter unit and the additional filter unit and the connection between the common filter unit and the second signal path.

7. The high frequency module according to any one of claims 1 to 6, wherein: The additional filter unit is not provided on a reception path from the common filter unit to the low-noise amplifier.

8. The high frequency module according to any one of claims 1 to 7, wherein: The additional filter unit is connected between the power amplifier and the common filter unit. The low noise amplifier is connected to the second signal path.

9. A communication device comprising: The high frequency module according to any one of claims 1 to 8; and The signal processing circuit is connected to the high frequency module and performs signal processing on the high frequency signal.

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