Manufacturing method of semiconductor thermoelectric power generation sheet

Abstract

The invention relates to the technical field of thermoelectric devices, and provides a semiconductor thermoelectric power generation sheet manufacturing method comprising the following steps: S1, preparation; s2, sintering an insulating layer: sintering one surface of the aluminum alloy vapor chamber 1 to form an insulating substance, and forming the insulating layer 2; s3, sintering a copper sheet layer: pasting a copper sheet on the insulating layer for sintering and fixing to form a conductive copper sheet 3; s4, welding a power generation pile: welding an NP electric pile on a copper sheet, and respectively welding an A board circuit and a B board circuit on each pair of aluminum alloy uniform temperature plates 1; s5, pasting aerogel: covering and pasting aerogel 4 in gaps between the P seeds and the N seeds on the copper sheet; and S6, mold closing. Through the arrangement of the aluminum alloy temperature-uniforming plate and the aerogel, the heat utilization rate of the thermoelectric power generation sheet is greatly improved, the basic requirement for external insulation is ensured based on the operation of sintering the insulating layer, and the aluminum alloy temperature-uniforming plate can be used for manufacturing the thermoelectric power generation sheet.

Description

Technical Field

[0001] The invention relates to a method for manufacturing a semiconductor temperature difference power generation sheet, belonging to the technical field of thermoelectric devices. Background Art

[0002] In the prior art, the surface of the thermoelectric generator is generally encapsulated with insulating thermal conductive materials, such as the two-stage semiconductor refrigerator with multiple temperature zones and separate temperature controls disclosed in the Chinese patent application number CN202311716382.3. The most commonly used insulating thermal conductive material for thermoelectric generators is ceramic. However, the thermal conductivity of ordinary ceramics generally does not exceed 2.00W / mK, which is not even as high as the thermal conductivity of ice, and the price of ceramics with high thermal conductivity is too high. The cost of a piece of ceramic with high thermal conductivity can exceed that of dozens of ordinary thermoelectric generator products.

[0003] On the other hand, the A-board circuit and the B-board circuit interlayer of the thermoelectric power generation sheet are circuits made of metals such as copper sheets with high thermal conductivity. This leads to heat exchange between the N and P stacks inside the thermoelectric power generation sheet. The heat exchange between the N and P stacks is an inevitable result of the power generation of the thermoelectric power generation sheet.

[0004] The above two aspects combined result in low thermal energy utilization rate of the thermoelectric generator. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides a method for manufacturing a semiconductor thermoelectric power generation sheet. The method for manufacturing a semiconductor thermoelectric power generation sheet greatly improves the temperature difference of the thermoelectric power generation sheet through the setting of an aluminum alloy temperature-averaging plate and aerogel, and ensures the basic requirements for external insulation based on the operation of the sintered insulating layer, so that the aluminum alloy temperature-averaging plate can be used for the manufacture of the thermoelectric power generation sheet.

[0006] The present invention is achieved through the following technical solutions.

[0007] The present invention provides a method for manufacturing a semiconductor thermoelectric power generation sheet, comprising the following steps:

[0008] S1. Preparation: prepare an even number of aluminum alloy temperature balancing plates and place the aluminum alloy temperature balancing plates in pairs;

[0009] S2. Sintering insulation layer: Sinter one side of the aluminum alloy temperature balancing plate to form an insulation material to form an insulation layer;

[0010] S3, sintering copper sheet layer: sticking the copper sheet on the insulating layer and sintering and fixing it to form a conductive copper sheet;

[0011] S4. Welding the power generation stack: Weld the NP stack on the copper sheet, and weld the A board circuit and the B board circuit on each pair of aluminum alloy temperature balancing plates respectively;

[0012] S5, pasting aerogel: covering and pasting aerogel in the gap between P seeds and N seeds on the copper sheet;

[0013] S6. Mold closing: The paired aluminum alloy temperature equalizing plates are assembled into a sandwich-shaped semiconductor temperature difference power generation sheet with the aerogel surface being located thereon.

[0014] The following steps are also included:

[0015] S7, circuit conduction detection: by manufacturing the temperature difference between the A and B surfaces of the sandwich-shaped semiconductor thermoelectric power generation sheet, the circuit voltage and / or current of the sandwich-shaped semiconductor thermoelectric power generation sheet is detected to determine the qualification of the sandwich-shaped semiconductor thermoelectric power generation sheet;

[0016] S8. Edge sealing: seal and package the qualified sandwich semiconductor temperature difference power generation sheet along the edge.

[0017] In step S6, when the paired aluminum alloy temperature equalizing plates are assembled with the aerogel on the surface, P seeds and N seeds are sandwiched in between to form a series circuit through copper sheets.

[0018] The N seeds include N seeds obtained by cutting N-type semiconductor crystal rods and connecting P seeds to form a battery stack; the P seeds include P seeds obtained by cutting P-type semiconductor crystal rods and connecting N seeds to form a battery stack.

[0019] The N-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and selenium powders in a volume ratio of 45-55:42-50:3-6, die-casting and then pulling the crystal into shape.

[0020] The P-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and antimony powders in a volume ratio of 50-60:12-23:22-34, die-casting and then pulling the crystal into shape.

[0021] The NP stack includes P seeds and N seeds that are distributed in an array with gaps and staggered distribution.

[0022] The aerogel is a thermal insulation aerogel.

[0023] In the step S2, sintering is performed at 700° C. to 800° C., and the main component of the insulating layer is aluminum oxide.

[0024] The beneficial effect of the present invention is that the temperature difference of the thermoelectric power generation sheet is greatly improved by setting the aluminum alloy temperature equalizing plate and the aerogel, and the basic requirements for external insulation are ensured based on the operation of the sintered insulating layer, so that the aluminum alloy temperature equalizing plate can be used for the production of the thermoelectric power generation sheet. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic diagram of a process of at least one embodiment of the present invention;

[0026] Figure 2 yes Figure 1 Schematic diagram of the layered structure of the obtained product;

[0027] Figure 3 yes Figure 2 Schematic diagram of the internal local structure after omitting the aerogel.

[0028] In the figure: 1-aluminum alloy temperature plate, 2-insulating layer, 3-conductive copper sheet, 4-aerogel, 5-NP stack, 51-P seed, 52-N seed. DETAILED DESCRIPTION

[0029] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.

[0030] A first embodiment of the present invention relates to Figure 1 A method for manufacturing a semiconductor thermoelectric power generation sheet is shown, comprising the following steps:

[0031] S1. Preparation: prepare an even number of aluminum alloy temperature balancing plates 1, and place the aluminum alloy temperature balancing plates 1 in pairs;

[0032] S2, sintering insulating layer: sintering one side of the aluminum alloy temperature balancing plate 1 to form an insulating material to form an insulating layer 2;

[0033] S3, sintering copper sheet layer: sticking the copper sheet on the insulating layer and sintering and fixing it to form a conductive copper sheet 3;

[0034] S4, welding the power generation stack: welding the NP stack 5 on the copper sheet, and welding the A board circuit and the B board circuit respectively on each pair of aluminum alloy temperature equalizing plates 1; generally, the A board circuit and the B board circuit match, and the P seed distribution constitutes the whole circuit of the P stack and the N seed distribution constitutes the whole circuit of the N stack;

[0035] S5, pasting aerogel: covering and pasting aerogel 4 in the gap between P seeds and N seeds on the copper sheet;

[0036] S6, mold closing: the paired aluminum alloy temperature balancing plates 1 are assembled with the aerogel 4 on the surface thereof as shown in FIG. Figure 2 , Figure 3 The sandwich semiconductor thermoelectric power generation sheet shown.

[0037] Therefore, the aluminum alloy temperature-averaging plate 1 is used as a thermally conductive material, and its thermal conductivity is greater than 150W / mK, and can be easily set to exceed 200W / mK. The thermal conductivity is greatly improved compared to ordinary ceramics, and the cost is almost negligible compared to ceramics with high thermal conductivity, thereby greatly improving the surface thermal conductivity of the temperature difference power generation sheet at an extremely low cost; the aluminum alloy temperature-averaging plate 1 itself is not an insulating material. This embodiment forms an insulating layer on the inner surface of the aluminum alloy temperature-averaging plate 1 through step S2, so that the aluminum alloy temperature-averaging plate 1 and its insulating layer become an insulating thermally conductive material as a whole relative to the inside; the setting of aerogel can effectively reduce the heat exchange of the board circuit between the N-pole circuit and the P-pole circuit, and improve the utilization rate of the temperature difference between the N-pole seeds and the P-pole seeds, thereby greatly improving the overall power generation efficiency.

[0038] The second embodiment of the present invention is substantially the same as the first embodiment, mainly in that it further includes the following steps:

[0039] S7, circuit conduction detection: by manufacturing the temperature difference between the A and B surfaces of the sandwich-shaped semiconductor thermoelectric power generation sheet, the circuit voltage and / or current of the sandwich-shaped semiconductor thermoelectric power generation sheet is detected to determine the qualification of the sandwich-shaped semiconductor thermoelectric power generation sheet;

[0040] S8. Edge sealing: seal and package the qualified sandwich semiconductor temperature difference power generation sheet along the edge.

[0041] Furthermore, in step S6, when the paired aluminum alloy temperature equalizing plates 1 are assembled with the aerogel 4 on the surface, the P seeds and N seeds are sandwiched in between to form a series circuit 5 through a copper sheet.

[0042] Furthermore, the NP stack 5 includes P seeds and N seeds distributed in an array with gaps and staggered spacing.

[0043] Preferably, the aerogel 4 is a heat-insulating aerogel. The function of the heat-insulating aerogel is to isolate the hot side from the cold side, increase the temperature difference between the two sides, and reduce thermal neutralization.

[0044] Furthermore, in step S2, sintering is performed at 700°C to 800°C, and the main component of the insulating layer 2 is aluminum oxide.

[0045] The third embodiment of the present invention is substantially the same as the first embodiment, mainly in that, further, the N seeds include N seeds 52 obtained by cutting N-type semiconductor crystal rods and connected P seeds 51 to form a battery stack; the P seeds include P seeds obtained by cutting P-type semiconductor crystal rods and connected N seeds to form a battery stack.

[0046] Furthermore, the N-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and selenium powders in a volume ratio of 45-55:42-50:3-6, die-casting and then pulling the crystal into shape.

[0047] Furthermore, the P-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and antimony powders in a volume ratio of 50-60:12-23:22-34, die-casting and then pulling the crystal into shape.

Claims

1. A method for manufacturing a semiconductor thermoelectric power generation sheet, characterized in that: The following steps are involved: S1. Preparation: prepare an even number of aluminum alloy temperature balancing plates (1), and place the aluminum alloy temperature balancing plates (1) in pairs; S2, sintering the insulating layer: sintering one side of the aluminum alloy temperature balancing plate (1) to form an insulating material to form an insulating layer (2); S3, sintering the copper sheet layer: sticking the copper sheet on the insulating layer and sintering and fixing it to form a conductive copper sheet (3); S4, welding the power generation stack: welding the NP stack (5) on the copper sheet, and welding the A board circuit and the B board circuit on each pair of aluminum alloy temperature balancing plates (1); S5, pasting aerogel: covering and pasting aerogel (4) in the gap between P seeds and N seeds on the copper sheet; S6. Mold closing: The paired aluminum alloy temperature equalizing plates (1) are assembled together with the surface where the aerogel (4) is located to form a sandwich-shaped semiconductor temperature difference power generation sheet.

2. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: The following steps are also included: S7, circuit conduction detection: by manufacturing the temperature difference between the A and B surfaces of the sandwich-shaped semiconductor thermoelectric power generation sheet, the circuit voltage and / or current of the sandwich-shaped semiconductor thermoelectric power generation sheet is detected to determine the qualification of the sandwich-shaped semiconductor thermoelectric power generation sheet; S8. Edge sealing: seal and package the qualified sandwich semiconductor temperature difference power generation sheet along the edge.

3. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: In the step S6, when the paired aluminum alloy temperature equalizing plates (1) are assembled with the surface where the aerogel (4) is located, the P seeds and N seeds are sandwiched in between to form a series circuit through the copper sheet.

4. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: The N seeds include N seeds obtained by cutting N-type semiconductor crystal rods and connecting P seeds to form a battery stack; the P seeds include P seeds obtained by cutting P-type semiconductor crystal rods and connecting N seeds to form a battery stack.

5. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 4, characterized in that: The N-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and selenium powders in a volume ratio of 45-55:42-50:3-6, die-casting and then pulling the crystal into shape.

6. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 4, characterized in that: The P-type semiconductor crystal rod is obtained by mixing tellurium, bismuth and antimony powders in a volume ratio of 50-60:12-23:22-34, die-casting and then pulling the crystal into shape.

7. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 3, characterized in that: The NP battery stack (5) comprises P seeds and N seeds which are distributed in an array with gaps and staggered distribution.

8. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: The aerogel (4) is a thermal insulation aerogel.

9. The method for manufacturing a semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: In the step S2, sintering is performed at 700° C. to 800° C., and the main component of the insulating layer (2) is aluminum oxide.

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