Heat processing apparatus, heat processing method, and computer storage medium

Abstract

A heat treatment device for heating a substrate on which a coating film is formed, the heat treatment device being provided with: a treatment container in which a treatment space for accommodating the substrate is formed; a heat plate having a placement surface on which the substrate accommodated in the processing space is placed, and a heating unit for heating the substrate; the adjusting mechanism is used for adjusting the height of the substrate relative to the hot plate; an exhaust unit that exhausts the processing space; and a control unit that performs control so as to execute: (A) a step in which the height of the substrate with respect to the heat plate is set to a predetermined height that is a predetermined distance from the heat plate, and heat treatment of the substrate is started; and (B) a step for switching the exhaust of the processing space from the off state to the on state, when the heat treatment has reached a predetermined degree of progress, in a state in which the substrate is placed on the hot plate or in a state in which the substrate is brought close to the hot plate, by making the height of the substrate with respect to the hot plate lower than the predetermined height.

Description

Technical Field

[0001] The present disclosure relates to a heating treatment device, a heating treatment method and a computer storage medium. Background Art

[0002] The heating treatment device disclosed in Patent Document 1 is a device for heating a substrate formed with a coating film in a processing container, and the heating treatment device comprises: a loading portion, which is arranged in the processing container and is used to load the substrate; and a heating portion, which is used to heat the substrate loaded on the loading portion. In addition, in Patent Document 1, the processing container has a cover portion constituting a top, and an exhaust chamber is formed between the upper surface portion and the lower surface portion of the cover portion. A peripheral exhaust port connected to the exhaust chamber is formed in the peripheral portion of the lower surface portion of the cover portion. A central exhaust port is formed in the central portion of the lower surface portion of the cover portion. The central exhaust port is connected to one end side of a central exhaust pipe that is arranged to pass through the exhaust chamber.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-9923 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The technology according to the present disclosure suppresses the generation of defects in the substrate caused by substances generated in the processing space during heating without impairing the uniformity of the coating film in the substrate surface after the heat treatment.

[0008] Solutions for solving problems

[0009] One embodiment of the present disclosure is a heating treatment device that heats a substrate on which a coating film is formed, and the heating treatment device comprises: a treatment container in which a treatment space for accommodating the substrate is formed; a hot plate having a placement surface for placing the substrate accommodated in the treatment space and a heating portion for heating the substrate; an adjustment mechanism for adjusting the height of the substrate relative to the hot plate; an exhaust portion for exhausting the treatment space; and a control portion, wherein the control portion controls to perform the following steps: (A) a step of setting the height of the substrate relative to the hot plate to a predetermined height at a predetermined distance from the hot plate and starting heating treatment of the substrate; and (B) a step of setting the height of the substrate relative to the hot plate to be lower than the predetermined height when the heating treatment reaches a predetermined degree of progress, setting the substrate to a state where the substrate is placed on the hot plate or a state where the substrate is close to the hot plate, and switching the exhaust of the treatment space from off to on.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to suppress the occurrence of defects in the substrate caused by substances generated in the processing space during heating without impairing the uniformity of the coating film in the substrate surface after the heat treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is an explanatory diagram schematically showing the structure of the heat treatment apparatus according to the present embodiment as viewed from the side.

[0013] Figure 2 It is a diagram showing the state of the heat treatment apparatus in each step of wafer processing according to the present embodiment.

[0014] Figure 3 It is a diagram showing the state of the heat treatment apparatus in each step of wafer processing according to the present embodiment.

[0015] Figure 4 FIG. 1 is a diagram showing a temperature history of a wafer W during a heating process included in the wafer processing according to the present embodiment.

[0016] Figure 5 FIG. 1 is a diagram showing an exhaust method of a processing space in another example of wafer processing according to the present embodiment.

[0017] Figure 6 This is a diagram showing a state of a processing space in a step of completing a heat treatment in another example of wafer processing according to the present embodiment.

[0018] Figure 7 It is a diagram for explaining the effects of another example of the wafer processing according to the present embodiment.

[0019] Figure 8 It is a diagram for explaining the effects of another example of the wafer processing according to the present embodiment.

[0020] Fig. 9 It is a diagram showing the height of the cover member with respect to the bottom member in each step of another example of the wafer processing according to the present embodiment.

[0021] Fig.10 This is an explanatory diagram of data used to determine whether the heating process has reached a predetermined degree of progress. DETAILED DESCRIPTION

[0022] In the manufacturing process of semiconductor devices and the like, various processing liquids are sometimes applied to the surface of a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). For example, a processing liquid for forming an SOC film used as a hard mask is applied. Further, after the application of these processing liquids, that is, after the formation of the coating film, a heat treatment of heating the substrate is performed in a processing container of a heat treatment apparatus.

[0023] In addition, in the heat treatment apparatus, for the purpose of recovering substances that cause defects (Japanese: 欠陥原因物質) generated in the processing container during heating, the inside of the processing container is exhausted. Substances that cause defects are substances that cause defects due to adhering to the substrate. However, even if the exhaust is performed as described above, it is sometimes impossible to completely recover the substances that cause defects. Further, if the exhaust amount from the processing container is increased or the exhaust time is extended, more substances that cause defects can be recovered, but sometimes the thickness of the coating film becomes uneven in the plane of the substrate.

[0024] Therefore, the technology according to the present disclosure suppresses defects of the substrate caused by substances generated in the processing container during heating (specifically, in the processing space formed by the processing container) without impairing the in-plane uniformity of the coating film on the substrate after the heat treatment.

[0025] Hereinafter, the heat treatment apparatus and the heat treatment method according to the present embodiment will be described with reference to the drawings. In addition, in this specification and the drawings, elements having substantially the same functional structure are denoted by the same reference numerals, and thus redundant description is omitted.

[0026] <Heat treatment apparatus>

[0027] Figure 1 FIG. is an explanatory view schematically showing the structure of the heat treatment apparatus according to the present embodiment as viewed from the side.

[0028] As Figure 1 shown, the heat treatment apparatus 1 has a processing container 2 that forms a processing space S for accommodating a wafer W as a substrate. The processing container 2 has a bottom member 3 and a lid member 4. The bottom member 3 has a hot plate 11. The lid member 4 includes a top portion 4a facing a mounting surface 11a (to be described later) of the bottom member 3, and a processing space S is formed between the lid member 4 and the bottom member 3. In addition, the processing container 2 is provided in a housing (not shown).

[0029] The bottom member 3 is supported on a base 5 of the above-described housing (not shown) via a support member 6. The bottom member 3 includes a support table 12 formed of a flat cylindrical body having a recess formed at a position inside the peripheral portion 12a. A hot plate 11 is provided in the recess of the support table 12.

[0030] The upper surface 11 a of the heat plate 11 is a placement surface for placing the wafer W. A plurality of gap pins (not shown) for supporting the lower surface of the wafer W may be provided on the upper surface 11 a of the heat plate 11 (hereinafter referred to as the placement surface 11 a ).

[0031] In addition, a heater 13 as a heating unit for heating the wafer W is provided in the hot plate 11. The heater 13 can heat the wafer W by heating the mounting surface 11a. Specifically, the heater 13 can heat the wafer W mounted on the mounting surface 11a by heating the mounting surface 11a, and can also heat the wafer W located at a position separated from the mounting surface 11a. The heater 13 is controlled by the control unit 100 described later.

[0032] The top portion 4 a of the cover member 4 is formed in a disk shape having a larger diameter than that of the bottom member 3 .

[0033] The cover member 4 has a side wall portion 4b that closes the periphery of the gap between the bottom member 3 and the ceiling portion 4a to form the processing space S. The side wall portion 4b is formed in a circular ring shape in plan view.

[0034] The cover member 4 is raised and lowered by the lifting mechanism 20. The lifting mechanism 20 has a driving source such as a motor that generates a driving force for raising and lowering the cover member 4, that is, a driving force for adjusting the height of the cover member 4 relative to the bottom member 3, and the cover member 4 is, for example, provided on the base 5. The lifting mechanism 20 is controlled by the control unit 100 described later. The lifting mechanism 20 can form the processing space S by lowering the cover member 4. In addition, the lifting mechanism 20 can open the processing space S by raising the cover member 4. Furthermore, the lifting mechanism 20 can change the volume of the processing space S by raising and lowering the cover member 4, that is, by adjusting the height of the cover member 4 relative to the bottom member 3.

[0035] As described above, the lifting mechanism 20 constitutes an adjustment mechanism for adjusting the height of the cover member 4 relative to the bottom member 3 , and also constitutes a changing section for changing the volume of the processing space S.

[0036] In addition, a shower head 30 is provided on the top 4 a of the cover member 4 .

[0037] The shower head 30 supplies a gas containing oxygen, that is, an oxygen-containing gas, downward from the top 4a. The oxygen-containing gas supplied by the shower head 30 is, for example, dry air.

[0038] In addition, the shower head 30 supplies an inert gas that does not contain oxygen downward from the top 4a. The inert gas supplied by the shower head 30 is, for example, nitrogen gas.

[0039] The shower head 30 has a plurality of spray holes 31 and a gas distribution space 32 .

[0040] The spray holes 31 are respectively formed on the lower surface of the shower head 30. The spray holes 31 are, for example, substantially evenly arranged at a portion other than an exhaust port 41 described later at a central portion of the lower surface of the shower head 30. The plurality of spray holes 31 include a first spray hole located above the peripheral portion of the wafer W on the hot plate 11 and a second spray hole located above the central portion of the wafer W on the hot plate 11.

[0041] The gas distribution space 32 distributes and supplies the oxygen-containing gas or the inert gas introduced into the shower head 30 to each of the ejection holes 31 .

[0042] The shower head 30 is connected to an introduction pipe 33 for introducing an oxygen-containing gas or an inert gas into the shower head 30 .

[0043] The introduction pipe 33 is connected to a gas source 35 storing an oxygen-containing gas via a supply pipe 34. The supply pipe 34 is provided with a supply equipment group 36 including an on-off valve for controlling the flow of the oxygen-containing gas, a flow rate regulating valve, and the like.

[0044] The introduction pipe 33 is connected to a gas source 38 storing an inert gas via a supply pipe 37. The supply pipe 37 is provided with a supply equipment group 39 including an on-off valve and a flow rate regulating valve for controlling the flow of the inert gas.

[0045] The supply equipment groups 36 and 39 are controlled by a control unit 100 described later.

[0046] In the heating treatment device 1, a gas supply unit for supplying inert gas to the processing space S is composed of a shower head 30, an inlet pipe 33, a supply pipe 37, and a supply equipment group 39, and another gas supply unit for supplying oxygen-containing gas to the processing space S is composed of a shower head 30, an inlet pipe 33, a supply pipe 34, and a supply equipment group 36.

[0047] Furthermore, the heat treatment apparatus 1 is provided with a central exhaust portion 40 and a peripheral exhaust portion 50. The central exhaust portion 40 and the peripheral exhaust portion 50 constitute an exhaust portion for exhausting the processing space S.

[0048] The central exhaust unit 40 exhausts the processing space S from a position above the mounting surface 11a and corresponding to a central position of the wafer W on the mounting surface 11a (the central position in the example). The central exhaust unit 40 has an exhaust port 41. The exhaust port 41 is provided at a central position (the central position in the example) of the lower surface of the shower head 30 and opens downward. The central exhaust unit 40 exhausts the processing space S through the exhaust port 41.

[0049] In addition, the central exhaust unit 40 has a central exhaust passage 42 formed to extend upward from the exhaust port 41. The central exhaust passage 42 is connected to an exhaust device 44 such as a vacuum pump via an exhaust pipe 43. An exhaust device group 45 is provided in the exhaust pipe 43, and the exhaust device group 45 has a valve for adjusting the exhaust amount. The exhaust device 44 and the exhaust device group 45 are controlled by the control unit 100 described later.

[0050] The peripheral exhaust unit 50 exhausts the processing space S from a position above the mounting surface 11a and corresponding to a position near the peripheral portion of the wafer W on the mounting surface 11a (in the example, a position slightly outside the peripheral end of the above-mentioned wafer W). The peripheral exhaust unit 50 has an exhaust port 51. The exhaust port 51 opens downward from the lower surface of the top 4a in a manner surrounding the outer periphery of the shower head 30. The exhaust port 51 may be formed by arranging a plurality of exhaust holes along the outer periphery of the shower head 30. The peripheral exhaust unit 50 exhausts the processing space S via the exhaust port 51.

[0051] In addition, the peripheral exhaust section 50 has a peripheral exhaust path 52 leading to the exhaust port 51. The peripheral exhaust path 52 is connected to an exhaust device 54 such as a vacuum pump via an exhaust pipe 53. An exhaust equipment group 55 is provided in the exhaust pipe 53. The exhaust equipment group 55 has a valve for adjusting the exhaust amount. The exhaust device 54 and the exhaust equipment group 55 are controlled by the control unit 100 described later.

[0052] Furthermore, the top portion 4a is configured to be heated. For example, a heater (not shown) for heating the top portion 4a is built in the top portion 4a. The heater is controlled by a control unit 100 described later to adjust the top portion 4a (specifically, for example, the shower head 30) to a predetermined temperature.

[0053] Furthermore, in the heat treatment apparatus 1, a lifting mechanism 60 for lifting and lowering the wafer W is provided below the bottom member 3. The lifting mechanism 60 is provided with lifting pins 61 as a delivery member penetrating the support table 12 and the hot plate 11, and the delivery member is used to deliver the wafer W to a transport mechanism (not shown) provided outside the processing container 2. For example, at least three lifting pins 61 are provided at equal intervals along the circumferential direction of the hot plate 11.

[0054] The lifting pins 61 are configured to be lifted and lowered by the lifting mechanism 62, and can protrude above the hot plate 11 when lifted. The lifting mechanism 62 has a driving source such as a motor that generates a driving force for lifting and lowering the lifting pins 61, and the lifting mechanism 62 is provided on the base 5, for example. By lifting and lowering the lifting pins 61, the height of the wafer W supported by the lifting pins 61 relative to the hot plate 11 can be adjusted. The lifting mechanism 62 is controlled by the control unit 100 described later.

[0055] As described above, the lifting mechanism 60 constitutes an adjustment mechanism for adjusting the height of the wafer W relative to the heating plate 11 .

[0056] The above-mentioned heating treatment device 1 has a control unit 100. The control unit 100 is, for example, a computer having a processor such as a CPU, a memory, etc., and has a storage unit 101. The storage unit 101 stores, for example, a program containing instructions for controlling various actions of the heating treatment device 1 described later. In addition, the above-mentioned program can also be recorded in a computer-readable storage medium H, and installed from the storage medium H to the control unit 100. The storage medium H can be a medium for temporary storage or a medium for non-temporary storage. In addition, part or all of the program can also be implemented by dedicated hardware (circuit board).

[0057] <Wafer Processing Example 1>

[0058] Next, an example of wafer processing including heat processing performed using the heat processing apparatus 1 according to the present embodiment will be described.

[0059] Figure 2 and Figure 3 Each of the diagrams shows a state of the heat treatment apparatus 1 in each step of the wafer processing according to the present embodiment. Figure 4 FIG. 1 is a diagram showing a temperature history of a wafer W during a heating process included in the wafer processing according to the present embodiment.

[0060] In addition, all wafer processes according to the present embodiment described below are performed under the control of the control unit 100 .

[0061] (Step S1: Loading of Wafer W)

[0062] First, the wafer W is loaded into the heat treatment apparatus 1 .

[0063] Specifically, after the cover member 4 is raised, the wafer W having the SOC film formed thereon as the coating film is moved to the top of the hot plate 11 by a transport mechanism (not shown). Figure 2 As shown in (A), the wafer W is delivered to the lift pins 61, and the height of the wafer W relative to the heat plate 11 is raised to a delivery height Hd. The delivery height Hd is, for example, 30 mm to 50 mm.

[0064] At this time, the exhaust by the central exhaust unit 40 is turned off, and the exhaust by the peripheral exhaust unit 50 is always turned on during the wafer processing.

[0065] In addition, at this time, the heater 13 is controlled so that the temperature of the mounting surface 11a of the hot plate 11 becomes, for example, 200° C. to 450° C. In addition, during the wafer processing, the heater 13 is controlled so that the temperature of the mounting surface 11a of the hot plate 11 is constant, for example. In addition, during the wafer processing, the heater (not shown) for the top 4a is controlled so that the temperature of the top 4a (specifically, the shower head 30) is constant at a predetermined temperature, for example.

[0066] (Step S2: Start of heating treatment)

[0067] Next, the height of the wafer W relative to the heat plate 11 is set to a predetermined height, ie, a first height H1 , which is a predetermined distance from the heat plate 11 , and the heating process is started.

[0068] Specifically, the cover member 4 is lowered, as shown in FIG. Figure 2 The processing space S is formed as shown in (B).

[0069] In addition, at the same time as the cover member 4 is lowered or after the cover member 4 is lowered, the lift pins 61 are lowered to set the height of the wafer W relative to the heat plate 11 to a first height H1 that is different from and lower than the handover height Hd. When the height of the wafer W relative to the heat plate 11 is set to the first height H1 and the processing space S is formed in this way, the heating process starts. In addition, the first height H1 is, for example, 2 mm to 10 mm, and is preset and stored in the storage unit 101.

[0070] In addition, during the heat treatment, the height of the cover member 4 relative to the bottom member 3, that is, the volume of the treatment space S is constant.

[0071] (Step S3: Heating at the First Height H1)

[0072] Next, the wafer W is heated at the first height H1 , and the peripheral exhaust unit 50 is used to exhaust the wafer W to recover defect-causing substances generated in the processing space S during heating.

[0073] Specifically, the oxygen-containing gas is supplied from the shower head 30 to the processing space S while the height of the wafer W relative to the hot plate 11 is maintained at the first height H1 .

[0074] In addition, exhaust is performed by the peripheral exhaust unit 50 to recover defect-causing substances in the processing space S, such as defect-causing substances generated from the SOC film during heating.

[0075] In addition, the oxygen-containing gas may be ejected from the shower head 30 before the start of the heating process.

[0076] Step S3 is performed until the heating process reaches a predetermined progress level. Figure 4As shown, step S3 is performed until the temperature of the wafer W reaches a predetermined temperature Tt slightly lower than the temperature at which a cross-linking reaction with oxygen in the SOC film starts.

[0077] The determination of whether the heating process has reached a predetermined degree of progress, that is, whether the temperature of the wafer W has reached a predetermined temperature Tt, is performed, for example, based on whether the time elapsed from setting the height of the wafer W relative to the hot plate 11 to the first height H1 exceeds a predetermined time T1. When the predetermined time T1 is exceeded, the control unit 100 determines that the predetermined degree of progress has been reached, that is, the predetermined temperature Tt has been reached. The "predetermined time T1" used for this determination varies depending on the type of SOC film, and is pre-set, for example, based on user input via an input unit such as a keyboard or a touch panel not shown, and is stored in the storage unit 101.

[0078] (Step S4: Lowering of Wafer W)

[0079] Then, after the heat treatment reaches a predetermined degree of progress, the wafer W is lowered.

[0080] Specifically, after the heating process reaches a predetermined degree of progress, the lift pins 61 are lowered to place the wafer W on the placement surface 11 a of the hot plate 11 .

[0081] (Step S5: Heating in the Placed State)

[0082] Next, the wafer W is heated while being placed on the hot plate 11 , and exhaust is performed by the peripheral exhaust unit 50 and the central exhaust unit 40 to recover defect-causing substances generated in the processing space S during heating.

[0083] Specifically, if Figure 3 As shown in (A), the wafer W is kept placed on the hot plate 11, and oxygen-containing gas is supplied from the shower head 30 to the processing space S. When the wafer W heated by the hot plate 11 exceeds a certain temperature, the material in the SOC film on the wafer W undergoes a cross-linking reaction with oxygen in the processing space S and the like due to the heat. The SOC film is cured due to the cross-linking reaction in the film, that is, etching resistance is generated.

[0084] In addition, the exhaust equipment group 45 is controlled to switch the exhaust from the central exhaust unit 40 from off to on, and both the exhaust from the peripheral exhaust unit 50 and the exhaust from the central exhaust unit 40 are performed. Thus, defect-causing substances in the processing space S, such as defect-causing substances generated from the SOC film during heating, are recovered.

[0085] This step S5 is performed until a predetermined time T2 has elapsed since the wafer W was placed on the hot plate 11 .

[0086] The above-mentioned prescribed time T2 (i.e., the heating time when placed on the hot plate 11) is, for example, 30 seconds to 120 seconds. In addition, the above-mentioned prescribed time T1 (i.e., the heating time at the first height H1) is 0.5 times to 1.5 times the above-mentioned prescribed time T2.

[0087] Specifically, the timing of switching the exhaust performed by the central exhaust unit 40 from off to on is, for example, immediately after the start of heating in step S5 (i.e., immediately after the wafer W is placed on the hot plate 11). Alternatively, the timing may be after a predetermined time T3 has passed since the start of heating in step S5 (i.e., since the wafer W is placed on the hot plate 11). The reason for this will be described later. The predetermined time T3 is, for example, not less than 2 seconds and not more than 10 seconds.

[0088] (Step S6: End of heating treatment)

[0089] When step S5 is completed, the wafer W is separated from the mounting surface 11 a by the ascent of the lift pins 61 , and the cover member 4 is ascent to open the processing space S, and the heating process is completed.

[0090] Specifically, after step S5 is completed, for example, the supply of oxygen-containing gas from the shower head 30 to the processing space S, the exhaust by the central exhaust unit 40, and the exhaust by the peripheral exhaust unit 50 are still maintained, and the lifting pins 61 and the cover member 4 are simultaneously raised. Figure 3 As shown in (B), the wafer W is raised to the transfer height Hd, and the processing space S is opened.

[0091] (Step S7: Unloading of Wafer W)

[0092] Thereafter, the wafer W is unloaded from the heat treatment apparatus 1 .

[0093] Specifically, the lift pins 61 are lowered to transfer the wafer W to a transfer mechanism (not shown), and the transfer mechanism moves the wafer W from above the heat plate 11 .

[0094] Thus, the wafer processing involved in this example is completed.

[0095] As wafer processing different from this example, wafer processing according to the following Comparative Examples 1 and 2 will be considered.

[0096] (Comparative Example 1)

[0097] The wafer W at the first height H1 is not heated, and only the wafer W placed on the hot plate 11 is heated. During heating, both the exhaust by the central exhaust part 40 and the exhaust by the peripheral exhaust part 50 are turned on from the beginning.

[0098] (Comparative Example 2)

[0099] The wafer W at the first height H1 is not heated, and only the wafer W placed on the hot plate 11 is heated. During heating, the exhaust by the central exhaust portion 40 is turned off for the first 10 to 20 seconds, and only the exhaust by the peripheral exhaust portion 50 is turned on. Thereafter, for about 50 seconds, both the exhaust by the central exhaust portion 40 and the exhaust by the peripheral exhaust portion 50 are turned on.

[0100] However, the present inventors have repeatedly conducted in-depth experiments and found that the following problems exist in Comparative Examples 1 and 2. That is, in the wafer processing involved in Comparative Example 1, the following situation occurs: although no defects are generated on the surface of the wafer W after the wafer processing, the thickness of the SOC film after the wafer processing becomes thicker in the central part of the wafer W. In addition, in the wafer processing involved in Comparative Example 2, depending on the type of SOC film, the following situation occurs: sometimes the defect-causing substances in the processing space S cannot be fully recovered, and defects are generated on the surface of the wafer W after the wafer processing, and even if the exhaust time is extended, the above-mentioned defects cannot be fully reduced.

[0101] This is considered to be because: in a corresponding type of SOC film, when the wafer W is not heated at the first height H1, defective substances will be produced during the period when the temperature of the wafer W changes drastically after the heating treatment starts and just after it is placed on the hot plate 11, and if exhaust by the central exhaust section 40 is not performed, the defective substances cannot be recovered even if exhaust by the central exhaust section 40 is performed later.

[0102] In contrast, in the wafer processing involved in this example, the wafer W is placed on the hot plate 11 after being heated at the first height H1. Therefore, the temperature change of the wafer W immediately after the heating process starts and the temperature change of the wafer W immediately after being placed on the hot plate 11 are relatively gentle. Therefore, according to the wafer processing involved in this example, the generation of defective substances P that may be generated during a period when the temperature of the wafer W changes drastically and are difficult to recover can be suppressed.

[0103] In addition, in the heating process for the wafer W with the SOC film formed thereon, the fluidity of the SOC film is the highest in the initial stage, and the influence of exhaust is easily manifested in the film thickness. In this regard, in the wafer processing involved in this example, in the process of heating the wafer W at the first height H1, which is equivalent to the initial stage of the heating process, the exhaust performed by the central exhaust unit 40 is in the disconnected state. Therefore, it is possible to suppress the thickness of the SOC film from becoming thicker in the central part of the wafer W due to the central exhaust during the heating process.

[0104] In addition, in the above example of wafer processing according to the present embodiment, the height of the wafer W relative to the hot plate 11 during heating in step S5 is a height at which the wafer W is placed on the hot plate 11, but the invention is not limited thereto, and any height may be used as long as the wafer W is closer to the hot plate 11 than the first height H1. The same applies to the following examples.

[0105] <Main Effects of the Present Embodiment>

[0106] As described above, the wafer processing of the example involved in the present embodiment includes: (a) a step of setting the height of the wafer W relative to the hot plate 11 to the first height H1 at a predetermined distance from the hot plate 11 and starting the heating treatment of the wafer W; and a switching step of setting the height of the wafer W relative to the hot plate 11 to be lower than the first height H1, setting the wafer W to a state where the wafer W is placed on the hot plate 11 or a state where the wafer W is close to the hot plate 11, and switching the exhaust in the processing space S from off to on. Therefore, the temperature change of the wafer W is relatively gentle throughout the entire period of the heating treatment. Therefore, the generation of the defect-causing substance P that may be generated during the period when the temperature of the wafer W changes drastically and is difficult to recover can be suppressed. In addition, in the wafer processing of the example involved in the present embodiment, the exhaust of the processing space S (specifically, the exhaust performed by the central exhaust unit 40) for improving the recovery efficiency of the defect-causing substance in the processing space S is set to be turned on after the heating treatment has reached a predetermined progress, that is, after the fluidity of the coating film on the wafer W decreases. Therefore, it is possible to suppress the occurrence of in-plane non-uniformity in film thickness due to exhaust of the processing space S (specifically, exhaust by the central exhaust unit 40 ).

[0107] Therefore, according to the present embodiment, it is possible to suppress the occurrence of defects on the wafer W caused by substances generated in the processing space S during heating without impairing the uniformity of the coating film in the wafer W surface after the heat treatment.

[0108] As described above, the timing for switching the exhaust by the central exhaust unit 40 from off to on may also be after a predetermined time T3 has passed since the film was placed on the hot plate 11. This is because, depending on the type of the coating film, the heating time at the first height H1, etc., sometimes the fluidity of the coating film cannot be sufficiently reduced to a level that is not affected by the exhaust by the central exhaust unit 40 only by heating at the first height H1.

[0109] (Wafer Processing Example 2)

[0110] Figure 5 FIG. 1 is a diagram showing an exhaust method of the processing space S in another example of wafer processing according to the present embodiment.

[0111] In the above example, in the process of ending the heating treatment in step S6, the exhaust by the central exhaust unit 40 and the exhaust by the peripheral exhaust unit 50 are still kept on, and the cover member 4 is raised to open the processing space S. Alternatively, in the process of ending the heating treatment in step S6, as shown in FIG. Figure 5 As shown in FIG. 1 , the exhaust by the central exhaust unit 40 is still kept on, the exhaust by the peripheral exhaust unit 50 is turned off, and then after a predetermined time T2 has passed, the cover member 4 is raised to open the processing space S. Thus, it is possible to prevent defective substances from leaking out of the processing container 2 from the gap between the bottom member 3 and the cover member 4 when the processing space S is opened.

[0112] (Wafer Processing Example 3)

[0113] Figure 6 This is a diagram showing a state of the processing space S in the step of finishing the heat treatment in step S6 in another example of the wafer processing according to the present embodiment.

[0114] In the above-mentioned example 1 of the wafer processing, in the process of ending the heating process in step S6, the exhaust by the central exhaust unit 40 and the exhaust by the peripheral exhaust unit 50 are still kept on, and the lifting pins 61, that is, the wafer W is lifted, and the cover member 4 is lifted, until the wafer W is lifted to the delivery height Hd, and the processing space S is opened. Alternatively, in the process of ending the heating process in step S6, first, as shown in FIG. Figure 6 As shown, the exhaust by the central exhaust unit 40 and the exhaust by the peripheral exhaust unit 50 are still maintained, and only the lifting pins 61 are raised, and the height of the wafer W relative to the hot plate 11 is set to the second height H2, and the processing space S is still formed. Then, after a predetermined time T3 has passed, the lifting pins 61 may be raised again and the cover member 4 may be raised at the same time, and the wafer W may be raised to the delivery height Hd, and the processing space S may be opened.

[0115] In addition, the first height H1 and the second height H2 may be the same or different.

[0116] The second height H2 is set in advance and stored in the storage unit 101 , for example, similarly to the first height H1 .

[0117] In addition, the second height H2 may be pre-calculated and determined by the control unit 100 as follows, and stored in the storage unit 101. That is, the control unit 100 may obtain the detection result of the warpage amount of the wafer W to be processed from an external detection device (not shown), and pre-calculate and determine the second height H2 based on the detection result, and store it in the storage unit 101. In addition, the external detection device is, for example, a well-known device that captures the wafer W from the side and detects the warpage amount of the wafer W based on the captured result.

[0118] For example, the second height H2 is calculated and determined by the control unit 100 based on the detection result of the warpage amount of the wafer W to be processed as follows.

[0119] That is, the control unit 100 calculates the acquired warpage amount Wp of the wafer W and the default value H2 of the second height H2 stored in the storage unit 101. 0 The calculated result is determined as the actual second height H2 (=Wp+H2 0 ). Thus, the height H3 of the peripheral portion of the wafer W relative to the lower end of the peripheral portion of the cover member 4 is constant regardless of the warpage amount of the wafer W.

[0120] If the height H3 of the peripheral portion of the wafer W relative to the lower end of the peripheral portion of the cover member 4 is different, when the lifting pins 61 are lifted again and the cover member 4 is lifted to open the processing space S, the airflow passing under the peripheral portion of the cover member 4 and flowing into the surface of the wafer W is also different. Specifically, when the lifting pins 61 are lifted again and the cover member 4 is lifted to open the processing space S, if the height H3 is large, the airflow flowing into the surface of the wafer W is reduced, and if the height H3 is small, the airflow flowing into the surface of the wafer W is increased. Therefore, by making the height H3 of the peripheral portion of the wafer W relative to the lower end of the peripheral portion of the cover member 4 constant regardless of the warpage amount of the wafer W, the airflow flowing into the surface of the wafer W when the processing space S is opened is also approximately constant. As a result, the influence of the warpage amount of the wafer W on the heat treatment result can be suppressed.

[0121] In addition, in the case of this example, the exhaust method of the processing space S in the process of ending the heat treatment in step S6 may be set to be the same as that of the above-mentioned wafer processing example 6. That is, in the process of ending the heat treatment in step S6, of the exhaust by the central exhaust part 40 and the exhaust by the peripheral exhaust part 50, only the exhaust by the peripheral exhaust part 50 may be turned off before the cover member 4 rises, and then the cover member 4 is raised after a predetermined time T3 has passed to open the processing space S.

[0122] Furthermore, when performing the above-described wafer processing examples 1 to 3, the supply pipe 37 , the gas source 38 , and the supply device group 39 for supplying the inert gas to the processing space S can be omitted from the heat processing apparatus 1 .

[0123] <Wafer Processing Example 4>

[0124] Figure 7 and Figure 8 It is a diagram for explaining the effects of another example of the wafer processing according to the present embodiment.

[0125] In the above examples, during the heat treatment, the gas supplied to the processing space S is an oxygen-containing gas, and switching to an inert gas is not particularly performed.

[0126] In contrast, in this example, during the heat treatment, the gas supplied to the processing space S is switched from the oxygen-containing gas to the inert gas, and the oxygen-containing gas in the processing space S is replaced with the inert gas. That is, in this example, in the middle of the heat treatment, the heating in the atmosphere of the oxygen-containing gas is switched to the heating in the atmosphere of the low oxygen concentration (specifically, the heating in the atmosphere of the inert gas).

[0127] The timing for switching the gas supplied to the processing space S from the oxygen-containing gas to the inert gas is, for example, during the heating of the wafer W placed on the hot plate 11 in step S5 .

[0128] Specifically, the above-mentioned timing is, for example, during the heating period of step S5 and when the cross-linking reaction based on the reaction with oxygen in the SOC film on the wafer W reaches a specified degree of progress, more specifically, during the heating period of step S5 and when the specified temperature Ts becomes higher than the temperature at which the above-mentioned cross-linking reaction in the SOC film is completed.

[0129] The determination of whether the cross-linking reaction based on the reaction with oxygen in the SOC film has reached a predetermined degree of progress, that is, whether the temperature of the wafer W has reached a predetermined temperature Ts, is performed, for example, based on whether the time elapsed since the wafer W was placed on the hot plate 11 exceeds a predetermined time T11. When the above-mentioned predetermined time T11 is exceeded, the control unit 100 determines that the predetermined degree of progress has been reached, that is, the predetermined temperature Ts has been reached. The "predetermined time T11" used for this determination varies depending on the type of SOC film, and is pre-set, for example, based on user input using an input unit such as a keyboard or touch panel not shown, and is stored in the storage unit 101.

[0130] When heating is performed in an inert gas atmosphere in the latter stage of the heat treatment as in this example, the supply of the inert gas from the shower head 30 to the processing space S is stopped before the cover member 4 is raised and before the processing space S is opened when the heat treatment is finished.

[0131] During the period including immediately after the wafer W is placed on the hot plate 11, due to a sharp temperature change or the like, as shown in (A) of FIG. Figure 7 , sometimes a defect-causing substance P1 in the form of large particles scatters from the SOC film. If the heat treatment progresses, the scattering of the defect-causing substance P1 converges (in Japanese: 収まる). However, in a case different from this example where the switching to an inert gas is not performed, when the heat treatment progresses, as shown in (B) of FIG. Figure 7 , sometimes the above-mentioned defect-causing substance P1 combines with fine particles P2 formed from the material vaporized from the SOC film on the wafer W and oxygen in the processing space S thereafter, and becomes another defect-causing substance P3 with a large mass. This defect-causing substance P3 not only has a large mass but also is generated in large quantities. Therefore, in the exhaust by the central exhaust portion 40 and the exhaust by the peripheral exhaust portion 50, sometimes the defect-causing substance P3 cannot be completely recovered. As shown in (C) of FIG. Figure 7 , the defect-causing substance P3 fills the processing space S at the end of the heat treatment and adheres and remains on the entire surface of the wafer W after the wafer processing is completed.

[0132] In contrast, in the wafer processing according to this example, after the oxygen-based crosslinking reaction in the SOC film reaches a prescribed progress degree (specifically, after the crosslinking reaction is completed), the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas. Therefore, even if the above-mentioned defect-causing substance P1 in the form of large particles scatters during the period including immediately after the wafer W is placed on the hot plate 11, as shown in (A) of FIG. Figure 8 , this defect-causing substance P1 does not combine with the aforementioned fine particles P2 and oxygen in the processing space S, and thus does not change into another defect-causing substance P3 with a large mass (refer to (B) of FIG. Figure 7 ). Instead, a part of the above-mentioned defect-causing substance P1 volatilizes due to heat and shrinks (in (A) of FIG. Figure 8 , P4 is the defect-causing substance after shrinking). As shown in (B) of FIG. Figure 8 , the shrunk defect-causing substance P4 can be easily recovered by the exhaust by the central exhaust portion 40 and the exhaust by the peripheral exhaust portion 50. Therefore, it is possible to suppress the above-mentioned defect-causing substance P3 (refer to (B) of FIG. Figure 2 ) and other defect-causing substances from filling the processing space S at the end of the heat treatment, and it is possible to suppress the defect-causing substances from adhering and remaining on the entire surface of the wafer W after the wafer processing is completed.

[0133] When the timing of switching the gas supplied to the processing space S from an oxygen-containing gas to an inert gas is the above-mentioned timing, it is also possible to switch the exhaust by the central exhaust portion 40 from off to on at the same time as the switching. ​​​​​​​​​​​​​​​​

[0134] Alternatively, the timing for switching the gas supplied to the processing space S from the oxygen-containing gas to the inert gas, that is, replacing the processing space S with the inert gas, may be when the heating of step S5 is started, that is, when the wafer W is lowered and placed on the hot plate 11 in step S4 .

[0135] <Wafer Processing Example 5>

[0136] Fig. 9 It is a diagram showing the height of the cover member 4 relative to the bottom member 3 in each step of another example of the wafer processing according to the present embodiment.

[0137] In the above example, during the heating process, the height of the cover member 4 relative to the bottom member 3, that is, the volume of the processing space S is constant. Alternatively, in the process of replacing the oxygen-containing gas in the processing space S with an inert gas (hereinafter referred to as the replacement process), the volume of the processing space S is made smaller than the volume during the heating process under the atmosphere of the oxygen-containing gas. In addition, in this case, in the heating process under the atmosphere of the inert gas, the volume of the processing space S can also be made larger than the volume during the above-mentioned replacement process.

[0138] Specifically, it can also be, Fig. 9 As shown in (A), the heating step is performed in an atmosphere of oxygen-containing gas while the height of the cover member 4 relative to the bottom member 3 is set to a first height H11. Fig. 9 As shown in (B), the replacement process is performed in a state where the height of the cover member 4 relative to the bottom member 3 is set to a second height H12 lower than the first height H12. In addition, in this case, the heating process in an inert gas atmosphere may be performed in a state where the height of the cover member 4 relative to the bottom member 3 is set to a third height H13 higher than the second height H12. The third height H13 may be the same as the first height H11 or different from the first height H11.

[0139] By reducing the volume of the processing space S in the replacement step as in this example, it is possible to shorten the time required to replace the atmosphere in the processing space S with the inert gas. As a result, it is possible to suppress the generation of the aforementioned large-mass defect-causing substance P3.

[0140] In addition, by increasing the volume of the processing space S as described above in the heating process under the inert gas atmosphere, that is, by raising the height of the cover member 4 relative to the bottom member 3, the gas flow directly above the wafer W can be made more uniform within the wafer surface. In addition, it is possible to suppress the adhesion of defective substances to the cover member 4 (specifically, the shower head 30) and contamination.

[0141] In the heating process under the inert gas atmosphere, when the volume of the processing space S is made larger than the volume during the replacement process as described above, the supply flow rate of the inert gas supplied to the processing space S can be increased in the replacement process and relatively reduced in the heating process under the inert gas atmosphere. In this way, the time required to replace the atmosphere in the processing space S with the inert gas in the replacement process can be shortened, and the consumption of the inert gas in the entire heating process can be suppressed.

[0142] (Variation Example)

[0143] In the above-mentioned example 1 of wafer processing, a determination is made as to whether the heating treatment has reached a predetermined degree of progress, i.e., whether the temperature of the wafer W has reached a predetermined temperature Tt, based on a predetermined time T1, and the predetermined time T1 is pre-set based on user input via an input unit such as a keyboard or touch panel not shown.

[0144] The method for determining whether the heat treatment has reached a predetermined degree of progress, that is, the method for determining whether the temperature of the wafer W has reached a predetermined temperature Tt is not limited thereto.

[0145] For example, it will be shown Fig.10 The data D1 of the relationship R as shown is stored in advance in the storage unit 101. The above relationship R is the relationship between the temperature of the wafer W and the heating time when the wafer W is heated by setting the hot plate 11 to the current set temperature and setting the height of the wafer W relative to the hot plate 11 to the first height H1 set in advance. In addition, the above specified temperature (i.e., the target temperature reached by heating at the first height H1) Tt is received from the user by means of an input unit such as a keyboard or a touch panel not shown in the figure, and is stored in advance in the storage unit 101. Then, it can be determined whether the temperature of the wafer W has reached the specified temperature Tt based on the above data D1 stored in the storage unit 101. Specifically, it can be that the control unit 100 calculates and determines the time T21 required to reach the specified temperature Tt based on the above data D1 stored in the storage unit 101 and the specified temperature Tt, and determines whether the temperature of the wafer W has reached the specified temperature Tt based on the determination of whether the time elapsed since the height of the wafer W relative to the hot plate 11 is set to the first height H1 exceeds the above time T21.

[0146] The time T21 required to reach the predetermined temperature Tt, which is determined as information for determining whether the temperature of the wafer W has reached the predetermined temperature Tt, may be externally outputted via an external output unit such as a display unit (eg, a liquid crystal display) not shown.

[0147] Alternatively, data D2 may be pre-stored in the storage unit 101, the data D2 indicating the relationship R between the temperature of the wafer W and the heating time when the height of the wafer W relative to the hot plate 11 is set to the first height H1 to heat the wafer W, for each temperature of the hot plate 11 and each height of the wafer W relative to the hot plate 11. Then, whether the temperature of the wafer W has reached the predetermined temperature Tt may be determined based on the data D2 stored in the storage unit 101.

[0148] For example, the current temperature of the hot plate 11, the above-mentioned prescribed temperature Tt, and the set value of the first height H1 are received from the user by means of an input unit such as a keyboard or a touch panel (not shown), and are pre-stored in the storage unit 101. In addition, the control unit 100 calculates and determines the time T21 required to reach the prescribed temperature Tt based on this information and the above-mentioned data D2. Then, the control unit 100 determines whether the temperature of the wafer W has reached the prescribed temperature Tt based on whether the time elapsed since the height of the wafer W relative to the hot plate 11 was set to the first height H1 exceeds the above-mentioned time T21.

[0149] In addition, the relationship R between the temperature of the wafer W and the heating time when the height of the wafer W relative to the hot plate 11 is set to the first height H1 to heat the wafer W is affected not only by the set temperature of the hot plate 11 and the height of the wafer W relative to the hot plate 11, but also by the set temperature of the cover member 4 (specifically, the shower head 30). Therefore, data D3 may be pre-stored in the storage unit 101, which shows the above relationship R for each temperature of the hot plate 11, each height of the wafer W relative to the hot plate 11, and each temperature of the cover member 4. Then, it can be determined whether the temperature of the wafer W has reached the specified temperature Tt based on the above data D3 stored in the storage unit 101.

[0150] For example, the temperature of the cover member 4, the temperature of the hot plate 11, the above-mentioned predetermined temperature Tt, and the set value of the first height H1 are received from the user by means of an input unit such as a keyboard or a touch panel (not shown), and are stored in advance in the storage unit 101. In addition, the control unit 100 calculates and determines the time T21 required to reach the predetermined temperature Tt based on this information and the above-mentioned data D2. Then, the control unit 100 determines whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the hot plate 11 was set to the first height H1 exceeds the above-mentioned time T21.

[0151] Similar to the example using the above-mentioned data D1, in the example using the above-mentioned data D2 or the above-mentioned data D3, the time T21 required to reach the specified temperature Tt, which is determined as information for judging whether the temperature of the wafer W has reached the specified temperature Tt, can also be externally output by means of an external output unit such as a display unit (such as a liquid crystal display) not shown in the figure.

[0152] In addition, candidates for information used to determine whether the temperature of the wafer W has reached the predetermined temperature Tt may be determined based on the data D2.

[0153] For example, the temperature of the hot plate 11 and the set value of the predetermined temperature Tt, as well as the range of the time T21 allowed to reach the predetermined temperature Tt are received from the user through an input unit such as a keyboard or a touch panel (not shown), and are stored in advance in the storage unit 101. In addition, the control unit 100 determines a candidate combination of the time T21 and the first height H1 based on this information and the data D2. The determined candidate can also be output externally through an external output unit such as a display unit (e.g., a liquid crystal display) (not shown).

[0154] Similarly, candidates for information used to determine whether the temperature of the wafer W has reached the predetermined temperature Tt may be determined based on the data D3 .

[0155] For example, the temperature of the cover member 4, the temperature of the hot plate 11, the set value of the above-mentioned predetermined temperature Tt, and the range of the time T21 allowed to reach the predetermined temperature Tt are received from the user through an input unit such as a keyboard or a touch panel not shown, and are stored in advance in the storage unit 101. In addition, the control unit 100 determines a candidate combination of the above-mentioned time T21 and the first height H1 based on this information and the above-mentioned data D3. The determined candidate can also be output externally through an external output unit such as a display unit (for example, a liquid crystal display) not shown.

[0156] Alternatively, the candidate combinations of the time T21 and the height H1 determined based on the data D2 or the data D3 may be narrowed down based on the detection result of the warpage amount of the wafer W to be processed as follows.

[0157] That is, when the shape of the wafer W is a convex shape (a shape in which the central portion protrudes upward) in side view and the warpage of the wafer W is large, the distance between the peripheral portion of the wafer W and the heat plate 11 becomes closer, so that the amount of heating increases, and as a result, there is a risk of damaging the in-plane uniformity of the film thickness. Therefore, it can also be set that, for example, when the warpage of the wafer W along the convex shape in side view is 500μm or more, the control unit 100 selects the candidate combinations of the time T21 and the first height H1 to only those combinations in which the first height H1 is 3mm or more.

[0158] The detection result of the warpage amount of the wafer W to be processed is obtained from, for example, an external detection device (not shown). The information other than the warpage amount of the wafer W required for selecting the above-mentioned combination candidates is stored in advance in, for example, the storage unit 101 .

[0159] In addition, the first height H1 may be adjusted based on the detection result of the warpage amount of the wafer W to be processed as follows. That is, a basic value of the first height H1 may be set. For example, when the warpage amount of the wafer W along the convex shape in side view is 500 μm or more, a value larger than the basic value is applied to the first height H1, and in other cases, the basic value is applied to the first height H1.

[0160] In the above, the height of the cover member 4 relative to the bottom member 3 is adjusted by moving the cover member 4 up and down. However, the height of the cover member 4 may be adjusted by moving the cover member 4 up and down.

[0161] In the above, the height of the wafer W relative to the heat plate 11 is adjusted by moving the wafer W up and down, but the height may be adjusted by moving the heat plate 11 up and down.

[0162] In the above, the SOC film is cited as an example of the coating film, but the technology according to the present disclosure can also be applied to other coating films.

[0163] It should be considered that all points of the embodiments disclosed this time are illustrative and not restrictive. The above embodiments can be omitted, replaced, and changed in various ways without departing from the attached claims, the notes described later, and their main purpose. For example, the structural elements of the above embodiments can be arbitrarily combined within the scope that does not impair the above effects. In addition, the technology involved in the present disclosure can exert other effects that are clear to those skilled in the art based on the description of this specification together with or in place of the above effects.

[0164] In addition, the following structures also belong to the technical scope of the present disclosure.

[0165] [Supplementary Item 1]

[0166] A heat treatment device is provided for heating a substrate on which a coating film is formed, the heat treatment device comprising:

[0167] A processing container, wherein a processing space for accommodating a substrate is formed in the processing container;

[0168] a hot plate having a placement surface on which the substrate accommodated in the processing space is placed and a heating portion for heating the substrate;

[0169] an adjustment mechanism for adjusting the height of the substrate relative to the hot plate;

[0170] an exhaust unit for exhausting the processing space; and

[0171] Control Department,

[0172] The control unit controls to execute the following steps:

[0173] (A) step of setting the height of the substrate relative to the hot plate to a predetermined height at a predetermined distance from the hot plate and starting a heating process of the substrate; and

[0174] (B) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lowered to below the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

[0175] [Supplementary Item 2]

[0176] The heat treatment apparatus according to Supplementary Item 1, wherein:

[0177] The exhaust portion comprises:

[0178] a central exhaust portion for exhausting the processing space from a position above the mounting surface and corresponding to a position close to the center of the substrate on the mounting surface; and

[0179] a peripheral exhaust portion for exhausting the processing space from a position above the mounting surface and corresponding to a position close to the peripheral portion of the substrate on the mounting surface,

[0180] The control unit performs control,

[0181] The exhaust by the central exhaust portion is kept off in the step (A) and switched from off to on in the step (B); and

[0182] The exhaust by the peripheral exhaust portion is kept on from the step (A).

[0183] [Supplementary item 3]

[0184] The heat treatment apparatus according to Supplementary Item 2, wherein:

[0185] The processing container has:

[0186] a bottom member including the thermal plate; and

[0187] a cover member including a top wall facing the placement surface, wherein the processing space is formed between the cover member and the bottom member,

[0188] The heat treatment device further includes another adjustment mechanism for adjusting the height of the cover member relative to the bottom member.

[0189] The control unit performs control so that step (C) is also performed,

[0190] In the (C) step, when the heating treatment is completed, the exhaust by the central exhaust portion is maintained on, and the exhaust by the peripheral exhaust portion is disconnected. Thereafter, after a prescribed period of time, the height of the cover member is increased relative to the bottom member to open the treatment space.

[0191] [Supplementary Item 4]

[0192] The heat treatment apparatus according to any one of Supplementary Items 1 to 3, wherein

[0193] The control unit determines whether the heating process has reached the specified degree of progress or determines information used for the determination based on data indicating the relationship between the substrate temperature and the heating time when the height of the substrate relative to the hot plate is the specified height at the current set temperature of the hot plate.

[0194] [Supplementary Item 5]

[0195] The heat treatment apparatus according to any one of claims 1 to 3, wherein:

[0196] The control unit determines at least any one of the following: the specified height, whether the heating process has reached the specified degree of progress, information used for the determination, and candidates for the information, based on data showing the relationship between the substrate temperature and the heating time for each temperature of the hot plate and each height of the substrate relative to the hot plate.

[0197] [Supplementary Item 6]

[0198] The heat treatment apparatus according to Supplementary Item 4, wherein:

[0199] A storage unit for storing the data is further provided.

[0200] [Supplementary Item 7]

[0201] The heat treatment apparatus according to Supplementary Item 5, wherein:

[0202] A storage unit for storing the data is further provided.

[0203] [Supplementary Item 8]

[0204] The heat treatment apparatus according to any one of Supplementary Items 1 to 7, wherein:

[0205] further comprising a gas supply unit for supplying an inert gas to the processing space,

[0206] The control unit performs control to replace the oxygen-containing gas in the processing space with the inert gas during the heating process.

[0207] [Supplementary Item 9]

[0208] The heat treatment apparatus according to Supplementary Item 8, wherein:

[0209] The control unit performs control so that the oxygen-containing gas in the processing space is replaced with the inert gas in the step (B).

[0210] [Supplementary Item 10]

[0211] A heat treatment method is provided for heating a substrate on which a coating film is formed. The heat treatment method comprises:

[0212] (a) a step of setting the height of the substrate relative to a hot plate at a predetermined distance from the hot plate and starting a heating process of the substrate, wherein the hot plate has a placement surface on which the substrate accommodated in the processing space is placed; and

[0213] (b) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lower than the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

[0214] [Supplementary Item 11]

[0215] A computer-readable storage medium stores a program, which operates on a computer that controls a control unit of a heat treatment device to cause the heat treatment device to perform a heat treatment method for heating a substrate having a coating film formed thereon.

[0216] The heating treatment method comprises:

[0217] (a) a step of setting the height of the substrate relative to a hot plate at a predetermined distance from the hot plate and starting a heating process of the substrate, wherein the hot plate has a placement surface on which the substrate accommodated in the processing space is placed; and

[0218] (b) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lower than the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

[0219] Description of Reference Numerals

[0220] 1: heating treatment device; 2: treatment container; 11: hot plate; 11a: mounting surface; 13: heater; 20: lifting mechanism; 40: central exhaust part; 50: peripheral exhaust part; 60: lifting mechanism; 100: control part; S: treatment space; W: wafer.

Claims

1. A heat treatment device for heating a substrate on which a coating film is formed, the heat treatment device comprising: A processing container, wherein a processing space for accommodating a substrate is formed in the processing container; a hot plate having a placement surface on which the substrate accommodated in the processing space is placed and a heating portion for heating the substrate; an adjustment mechanism for adjusting the height of the substrate relative to the hot plate; an exhaust unit for exhausting the processing space; and Control Department, in, The control unit performs control to execute the following processes: (A) step of setting the height of the substrate relative to the hot plate to a predetermined height at a predetermined distance from the hot plate and starting a heating process of the substrate; and (B) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lowered to below the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

2. The heating treatment device according to claim 1, wherein: The exhaust portion has: a central exhaust portion for exhausting the processing space from a position above the mounting surface and corresponding to a position close to the center of the substrate on the mounting surface; as well as a peripheral exhaust portion for exhausting the processing space from a position above the mounting surface and corresponding to a position close to the peripheral portion of the substrate on the mounting surface, The control unit performs control, The exhaust by the central exhaust portion is kept off in the step (A) and switched from off to on in the step (B), The exhaust by the peripheral exhaust portion is kept on from the step (A).

3. The heating treatment device according to claim 2, wherein: The processing container has: a bottom member including the thermal plate; and a cover member including a top wall facing the placement surface, wherein the processing space is formed between the cover member and the bottom member, The heat treatment device further includes another adjustment mechanism for adjusting the height of the cover member relative to the bottom member. The control unit performs control so that step (C) is also performed, In the (C) step, when the heating treatment is completed, the exhaust by the central exhaust portion is maintained on, and the exhaust by the peripheral exhaust portion is disconnected. Thereafter, after a prescribed period of time, the height of the cover member is increased relative to the bottom member to open the treatment space.

4. The heat treatment device according to any one of claims 1 to 3, wherein: The control unit determines whether the heating process has reached the specified degree of progress or determines information used for the determination based on data indicating the relationship between the substrate temperature and the heating time when the height of the substrate relative to the hot plate is the specified height at the current set temperature of the hot plate.

5. The heat treatment device according to any one of claims 1 to 3, wherein: The control unit determines at least any one of the following: the specified height, whether the heating process has reached the specified degree of progress, information used for the determination, and candidates for the information, based on data showing the relationship between the substrate temperature and the heating time for each temperature of the hot plate and each height of the substrate relative to the hot plate.

6. The heat treatment device according to claim 4, wherein: A storage unit for storing the data is further provided.

7. The heating treatment device according to claim 5, wherein: A storage unit for storing the data is further provided.

8. The heat treatment device according to claim 1, wherein: further comprising a gas supply unit for supplying an inert gas to the processing space, The control unit performs control to replace the oxygen-containing gas in the processing space with the inert gas during the heating process.

9. The heating treatment device according to claim 8, wherein: The control unit performs control so that the oxygen-containing gas in the processing space is replaced with the inert gas in the step (B).

10. A heat treatment method for heating a substrate having a coating film formed thereon, the heat treatment method comprising: (A) a step of setting the height of the substrate relative to a hot plate at a predetermined distance from the hot plate and starting a heating process of the substrate, wherein the hot plate has a placement surface on which the substrate accommodated in the processing space is placed; and (B) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lowered to below the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

11. A computer-readable storage medium storing a program, the program being executed on a computer for controlling a control unit of a heat treatment device so that the heat treatment device executes a heat treatment method for heating a substrate having a coating film formed thereon, The heating treatment method comprises: (A) a step of setting the height of the substrate relative to a hot plate at a predetermined distance from the hot plate and starting a heating process of the substrate, wherein the hot plate has a placement surface on which the substrate accommodated in the processing space is placed; and (B) step, when the heating treatment reaches a specified degree of progress, the height of the substrate relative to the hot plate is lowered to below the specified height, the substrate is placed on the hot plate or is close to the hot plate, and the exhaust of the processing space is switched from off to on.

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