Elastic polishing wheel and preparation method thereof
By using a hot-pressed rubber vulcanized rubber combined with abrasive and conductive filler elastic polishing wheel, the problem of hard and brittle materials is solved, efficient and low-cost wafer surface improvement is achieved, and the process is simplified and environmental pollution is reduced.
Patent Information
- Application Number
- CN202411310006.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-19
- Publication Date
- 2024-12-20
AI Technical Summary
In the prior art, the processing of hard and brittle materials has high hardness and high brittleness, cutting and milling processing is not suitable, and grinding and grinding processing are prone to surface damage, and online electrolytic trimming, magnetorheological polishing and other methods are complex and expensive. The problem.
An elastic polishing wheel consisting of rubber, vulcanizing agent, abrasives, conductive fillers and oxidizing agents is prepared by hot pressing and used for the processing of wafers to form vulcanized rubber with certain mechanical properties, remove static electricity and oxidize the surface during grinding. Material to achieve polishing without polishing liquid.
It improves the surface quality of the wafer, reduces costs, simplifies the process, reduces environmental pollution, improves processing efficiency, reduces damage to the wafer surface, and significantly reduces surface roughness.
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Figure CN119161129A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of mechanical manufacturing and processing, and particularly relates to an elastic polishing wheel and a preparation method thereof. Background Art
[0002] With the rapid development of high-tech industries, chips represented by glass, sapphire, silicon wafers, and silicon carbide have been widely used in semiconductors, precision instruments, LED lighting, biomedicine, new energy vehicles and other fields. For example, microcrystalline glass can be used as a hard disk substrate material, sapphire is a key substrate material for manufacturing GaN-based LEDs, and single-crystal silicon wafers are the most important substrate material in integrated circuit manufacturing; however, these materials have high hardness and high brittleness, and cutting and milling processes are not suitable. Grinding and grinding are usually used, but grinding and grinding processes can easily cause surface damage to the chip, weakening its performance.
[0003] The surface quality of hard and brittle materials can be improved by online electrolytic dressing, magnetorheological polishing, ion beam polishing, chemical mechanical polishing and other methods. The basic principle is generally to remove trace surface materials through the mechanical and chemical action of ultrafine abrasives, with the assistance of polishing tools or electric / magnetic fields, chemical polishing liquids, etc., to obtain nanometer-level processing accuracy; however, online electrolytic dressing, magnetorheological polishing, and ion beam polishing require complex equipment and are expensive.
[0004] Patent CN1182689640A discloses a chemical polishing liquid, which uses hydrogen peroxide, nano-silicon dioxide and photocatalyst for polishing. During the polishing process, ultraviolet light is irradiated into the shear thickening polishing liquid, and the photocatalyst powder in the polishing liquid absorbs the energy of ultraviolet light, excites electrons from the valence band to the conduction band, and forms free electrons and holes. The holes have strong oxidizing properties, and catalyze H2O or H2O2 adsorbed on the surface of the photocatalyst powder to generate hydroxyl radicals with strong oxidizing properties; a part of the hydroxyl radicals combines with the Si dangling bonds on the surface of the nano-silicon dioxide to form -Si-OH radicals. The chemical mechanical polishing process is complicated, and the waste liquid needs to be treated and the surface of the workpiece needs to be cleaned.
[0005] Therefore, it is urgent to study a wafer processing method or processing tool with low price, simple process and high processing precision. Summary of the invention
[0006] Aiming at the technical problems of poor machinability, high machining cost, low machining efficiency and sensitivity to fracture damage of hard and brittle materials, the present invention proposes an elastic polishing wheel for wafer machining and a preparation method thereof. The elastic polishing wheel can effectively improve the surface quality of the wafer when used for wafer machining, and the polishing process does not require polishing liquid and has low cost.
[0007] In order to achieve the above object, the technical solution of the present invention is achieved as follows: An elastic polishing wheel is made of the following raw materials in parts by weight: 100 parts of rubber, 2-5 parts of vulcanizing agent, 0-2 parts of vulcanization accelerator, 5-10 parts of vulcanization activator, 0.5-1 part of antioxidant, 150-180 parts of abrasive, 5-10 parts of oxidant and 30-80 parts of conductive filler.
[0008] The rubber is one or more combinations of natural rubber (NR), styrene-butadiene rubber (SBR), butadiene rubber (BR), butyl rubber (IIR), isoprene rubber (IR), nitrile rubber (NBR), ethylene-propylene-diene rubber (EPDM) and chloroprene rubber (CR); Preferably, the rubber is a combination of a base rubber and a functional rubber, wherein the base rubber is natural rubber (NR); and the functional rubber is one or more combinations of styrene-butadiene rubber (SBR), butadiene rubber (BR), butyl rubber (IIR), isoprene rubber (IR), nitrile rubber (NBR), ethylene-propylene-diene rubber (EPDM) and chloroprene rubber (CR).
[0009] The vulcanizing agent is a combination of sulfur S, dicumyl peroxide DCP, epoxy resin liquid or phenolic resin; The vulcanization accelerator is one of accelerator M (mercaptobenzothiazole), accelerator DM (dibenzothiazole disulfide), and accelerator TMTD (tetramethylthiuram disulfide); The vulcanization activator is ZnO and stearic acid SA, and the antioxidant is one of antioxidant 4020, antioxidant 4010NA, and antioxidant RD; The abrasive is one or more combinations of diamond, cubic boron nitride, silicon carbide, cerium oxide, zirconium oxide, silicon dioxide, iron oxide, aluminum oxide and magnesium oxide; The conductive filler is one or more of carbon black, graphite powder, graphene, carbon fiber, and carbon nanotubes. When the surface of the chip is polished and friction is generated, static electricity will be generated on the surface of the chip. Static electricity can absorb dust, which is not conducive to the subsequent manufacturing of the chip. At this time, the conductive filler can remove the static electricity generated on the surface of the chip, which can prevent dust and the like from adhering to the surface of the chip.
[0010] The oxidant is one of KClO4, KMnO4, K2Cr2O7, KClO3 and NaAsO3, and is used to oxidize the material on the polishing surface into a softened layer that is easily removed.
[0011] Rubber is used as a binder to bond abrasives and conductive fillers to form elastic polishing wheels; vulcanizers, vulcanization accelerators, vulcanization activators, etc. are used for the vulcanization and cross-linking of rubber to form vulcanized rubber with certain mechanical properties; antioxidants can be used to prevent rubber aging and ensure that the physical and chemical properties of the elastic polishing wheel do not change significantly during manufacturing, storage and use; abrasives are used to remove material from the surface of the chip.
[0012] A method for preparing an elastic polishing wheel comprises the following steps: (1) mixing the rubber, adding a vulcanization activator, an antioxidant, a vulcanization accelerator, a vulcanizing agent, a conductive filler, an oxidant and an abrasive for mixing to obtain a mixed rubber, and leaving the mixed rubber at room temperature; (2) The rubber mixture is hot pressed and hardened to obtain an elastic polishing wheel.
[0013] Preferably, the rubber is subjected to rubber refining, and then a vulcanization activator, an antioxidant, and a vulcanization accelerator are added and mixed evenly, and then a vulcanizer, a conductive filler, an oxidant, and an abrasive are added in sequence and mixed to obtain a mixed rubber, which is then stored at room temperature; The rubber mixing process in step (1) is as follows: the temperature is 80-120°C and continuous rolling; the mixing process is continuous rolling, and finally thinning through 5 times, and the sheet is unrolled at a roller distance of 1-2 mm. The parking time is 24 hours. The purpose of parking is to allow the rubber to change from a stretched state to a relaxed state.
[0014] The temperature of the hot pressing molding in step (2) is 100-180° C., the pressure is 1-5 MPa, and the time is 120-240 min.
[0015] The hardening temperature in step (2) is 100-180° C. and the hardening time is 6-10 hours.
[0016] Preferably, the temperature rise curve for hardening is: keep warm at 100-110°C for 90-150 min, increase to 120-130°C after 10 min and keep warm for 90-150 min, increase to 140-150°C after 10 min, keep warm at 140-150°C for 90-150 min, increase to 160-180°C after 10 min, keep warm at 160-180°C for 90-150 min, and then cool naturally to room temperature.
[0017] The present invention has the following beneficial effects: (1) The elastic polishing wheel of the present invention adopts multiple components, which promote each other synergistically. Rubber is used as a binder to bond abrasives and fillers to form an elastic polishing wheel; vulcanizers, vulcanization accelerators, vulcanization activators, etc. are used for vulcanization cross-linking of rubber to form vulcanized rubber with certain mechanical properties; antioxidants can be used to prevent rubber aging to ensure that the physical and chemical properties of the elastic polishing wheel do not change significantly during manufacturing, storage and use; abrasives are used to remove materials on the surface of the chip. The added conductive filler can remove static electricity on the surface of the chip and avoid the adhesion of grinding dust and the like; the oxidant can oxidize the material on the surface of the polished object into a softened layer that is easy to remove.
[0018] (2) No additional polishing liquid is required during the polishing process of the present invention, thus avoiding the generation of wastewater and reducing environmental pollution. In traditional chemical polishing, oxidants, photocatalysts, etc. are added to the polishing liquid to increase the oxidizing property to enhance the polishing effect. In the elastic polishing wheel component of the present invention, an oxidant is added. During the grinding process, the surface temperature of the workpiece rises, and the oxidant can oxidize the material on the surface of the polished object into a softened layer that is easy to remove, which is easier to remove during the polishing process, further reducing the damage to the chip surface during the polishing process, significantly reducing the surface roughness, and improving the polishing accuracy; the surface quality of the chip is significantly improved.
[0019] (3) The elastic polishing wheel provided by the present invention can remove damage to the surface of a workpiece such as a wafer caused by grinding or grinding in a relatively short time, thereby effectively improving processing efficiency.
[0020] (4) The elastic polishing wheel of the present invention has a simple processing flow and low cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0022] Figure 1 The present invention is a process flow chart for preparing the elastic polishing wheel. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0024] Example 1 This embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 1: Table 1 Rubber compounding ratio ; The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed using an open mill. First, natural rubber and styrene-butadiene rubber were rolled to a continuous roll at 80°C, and then ZnO, SA, antioxidant, and accelerator DM were added. After mixing evenly, S and phenolic resin were added. Finally, carbon black, KClO3, diamond, and cerium oxide were added in sequence. The mixture was passed through the mill for 5 times and pressed into sheets at a roll distance of 2 mm. The mixing process was as follows: Figure 1 The process flow is shown; 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 140°C and 3MPa, holding the pressure for 120 minutes, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 120 min, increase to 120°C after 10 min, keep at 120 min, increase to 140°C after 10 min, keep at 140°C for 120 min, increase to 160°C after 10 min, keep at 160°C for 120 min, and then cool naturally to room temperature; 5) Inspection before storage.
[0025] The glass was processed using the elastic polishing wheel prepared in Example 1, and the roughness after processing was measured. The test results are shown in the following table.
[0026] Table 2 Test parameters Table 3 Processing results of elastic polishing wheel in Example 1 The above test results show that the elastic polishing wheel of Example 1 of the present invention has a better polishing effect on diamond fine-ground micro-ceramic glass, the surface quality is significantly improved after polishing, and no polishing liquid is required.
[0027] Example 2 The present embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 4: Table 4 Ratio of compound rubber ; The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber and nitrile rubber were rolled to a continuous roll at 80 °C, and then ZnO, SA, antioxidant, and accelerator TMTD were added. After mixing evenly, S and phenolic resin were added. Finally, carbon black, carbon nanotubes, KMnO4, magnesium oxide, and silicon dioxide were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 2 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 120°C and 3MPa, holding the pressure for 120 minutes, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 120 min, increase to 120°C after 10 min, keep at 120 min, increase to 140°C after 10 min, keep at 140°C for 120 min, increase to 160°C after 10 min, keep at 160°C for 120 min, and then cool naturally to room temperature; 5) Inspection and storage. The elastic polishing wheel prepared in Example 2 was used to process the silicon wafer, and the roughness after processing was measured. The test results are shown in the following table.
[0028] Table 5 Test parameters Table 6 Processing results of elastic polishing wheel in Example 2 The above test results show that the elastic polishing wheel of Example 2 of the present invention has a good polishing effect on the diamond wheel pre-ground silicon wafer. After polishing, all scratches on the surface of the silicon wafer are removed, the polishing time is short, and no polishing liquid is required.
[0029] Example 3 This embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 7: Table 7 Rubber compounding ratio ; The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber, BR, and butyl rubber (IIR) were rolled to a continuous roll at 100 °C, and then ZnO, SA, antioxidant 4020, and accelerator M were added. After mixing evenly, DCP and epoxy resin liquid were added. Finally, carbon fiber, graphene, KClO4, alumina, and magnesium oxide were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 2 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 100°C and 5MPa, holding the pressure for 240min, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set a heating curve as follows: keep at 110°C for 90 min, increase to 130°C after 10 min, keep at 150°C for 10 min, keep at 150°C for 90 min, increase to 180°C after 10 min, keep at 180°C for 90 min, and then cool naturally to room temperature; 5) Inspection and storage. The elastic polishing wheel prepared in Example 3 was used to process the silicon wafer, and the roughness after processing was measured. The test results are shown in the following table.
[0030] Table 8 Test parameters Table 9 Processing results of elastic polishing wheel in Example 3 The above test results show that the elastic polishing wheel of Example 3 of the present invention has a good polishing effect on the diamond wheel pre-ground silicon wafer. After polishing, all scratches on the surface of the silicon wafer are removed, the polishing time is short, and no polishing liquid is required.
[0031] Example 4 The present embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 10: Table 10 Rubber compounding ratio The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber mixture was mixed on an open mill. First, natural rubber NR, chloroprene rubber CR, and isoprene rubber IR were rolled to a continuous roll at 100 °C, and then ZnO, SA, and antioxidant RD were added. After mixing evenly, S and epoxy resin liquid were added. Finally, carbon nanotubes, carbon black, K2Cr2O7, zirconium oxide, and iron oxide were added in sequence. The mixture was thinned for 5 times and rolled at a roller distance of 1 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 180°C and 1 MPa, holding the pressure for 120 min, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 120 min, increase to 120°C after 10 min, keep at 120 min, increase to 140°C after 10 min, keep at 140°C for 120 min, increase to 180°C after 10 min, keep at 180°C for 90 min, and then cool naturally to room temperature; 5) Inspection and storage. The glass was processed using the elastic polishing wheel prepared in Example 4, and the roughness after processing was measured. The test results are shown in the following table.
[0032] Table 11 Test parameters Table 12 Processing results of elastic polishing wheel of Example 4 The above test results show that the elastic polishing wheel of Example 4 of the present invention has a good polishing effect on the diamond wheel pre-ground glass. After polishing, all scratches on the glass surface are removed, the polishing time is short, and no polishing liquid is required.
[0033] Example 5 This embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 13: Table 13 Rubber compounding ratio The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber NR and EPDM were rolled to a continuous roll at 100 °C, and then ZnO and antioxidant 4010NA were added. After mixing evenly, S was added. Finally, carbon nanotubes, carbon black, NaAsO3, cerium oxide and cubic boron nitride were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 1.8 mm. 2) Store at room temperature for 24 hours; 3) Place the film from step 2) in a steel mold, perform hot pressing at 150°C and 3 MPa, hold the pressure for 200 min, and demold.
[0034] 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 150 min, increase to 120°C after 10 min and keep at 150 min, increase to 140°C after 10 min, keep at 140°C for 150 min, increase to 160°C after 10 min, keep at 160°C for 150 min, and then cool naturally to room temperature; 5) Inspection before storage.
[0035] Example 6 This embodiment provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight, and the proportions are shown in Table 14: Table 14 Rubber compounding ratio The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber NR, EPDM and chloroprene rubber CR were rolled to a continuous roll at 100 °C, and then ZnO, stearic acid SA, antioxidant RD and accelerator DM were added. After mixing evenly, S and phenolic resin were added. Finally, carbon black, graphite powder, K2Cr2O7, silicon dioxide and cubic boron nitride were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 2 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 150°C and 3MPa, holding the pressure for 200 minutes, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 150 min, increase to 120°C after 10 min and keep at 150 min, increase to 140°C after 10 min, keep at 140°C for 150 min, increase to 160°C after 10 min, keep at 160°C for 150 min, and then cool naturally to room temperature; 5) Inspection before storage.
[0036] Comparative Example 1 This comparative example provides an elastic polishing wheel, which is made of the following components in parts by weight. The difference from Example 1 is that no oxidant is included in the components. The composition is shown in Table 15: Table 15 Rubber compounding ratio The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber and styrene-butadiene rubber were rolled to a continuous roll at 80°C, and then ZnO, SA, antioxidant, and accelerator DM were added. After mixing evenly, S and phenolic resin were added. Finally, carbon black, diamond, and cerium oxide were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 2 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 140°C and 3MPa, holding the pressure for 120 minutes, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 120 min, increase to 120°C after 10 min, keep at 120 min, increase to 140°C after 10 min, keep at 140°C for 120 min, increase to 160°C after 10 min, keep at 160°C for 120 min, and then cool naturally to room temperature; 5) Inspection before storage.
[0037] The glass was processed using the elastic polishing wheel prepared in Comparative Example 1, and the roughness after processing was measured. The test results are shown in the following table.
[0038] Table 16 Test parameters Table 17 Comparative Example 1 Elastic Polishing Wheel Processing Results The above test results show that the elastic polishing wheel of comparative example 1 of the present invention has a better polishing effect on diamond-ground microcrystalline glass, the surface quality is improved after polishing, and no polishing liquid is required. However, compared with Example 1, under the condition of not using an oxidant, the surface quality of the workpiece deteriorates, indicating that the addition of the oxidant component improves the polishing accuracy of the elastic polishing wheel.
[0039] Comparative Example 2: This comparative example provides an elastic polishing wheel and a preparation method thereof, which is made of the following components in parts by weight. The difference from Example 2 is that this comparative example does not contain an oxidant. The component proportions are shown in Table 18: Table 18 Rubber compounding ratio The specific steps for preparing the elastic polishing wheel are as follows: 1) The rubber compound was mixed on an open mill. First, natural rubber and nitrile rubber were rolled to a continuous roll at 80 °C, and then ZnO, SA, antioxidant, and accelerator TMTD were added. After mixing evenly, S and phenolic resin were added. Finally, carbon black, carbon nanotubes, magnesium oxide, and silicon dioxide were added in sequence. The mixture was thinned 5 times and rolled at a roller distance of 2 mm. 2) Store at room temperature for 24 hours; 3) placing the film from step 2) in a steel mold, hot pressing at 120°C and 3MPa, holding the pressure for 120 minutes, and demolding; 4) Place the sample in step 3) in a forced air drying oven for hardening, and set the heating curve as follows: keep at 100°C for 120 min, increase to 120°C after 10 min, keep at 120 min, increase to 140°C after 10 min, keep at 140°C for 120 min, increase to 160°C after 10 min, keep at 160°C for 120 min, and then cool naturally to room temperature; 5) Inspection and storage. The elastic polishing wheel prepared in Example 4 was used to process the silicon wafer, and the roughness after processing was measured. The test results are shown in the following table.
[0040] Table 19 Test parameters Table 20 Comparative Example 2 Elastic Polishing Wheel Processing Results The above test results show that when the elastic polishing wheel of Comparative Example 2 of the present invention is used to pre-grind the silicon wafer with a diamond grinding wheel, a small amount of fine scratches exist on the surface of the silicon wafer. Compared with Example 2, the surface quality of the workpiece deteriorates without using an oxidant, indicating that an oxidant is necessary for the formulation design of the elastic polishing wheel.
[0041] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims
1. An elastic polishing wheel, characterized in that: The elastic polishing wheel is made of the following raw materials in parts by weight: 100 parts of rubber, 2-5 parts of vulcanizing agent, 0-2 parts of vulcanization accelerator, 5-10 parts of vulcanization activator, 0.5-1 part of antioxidant, 150-180 parts of abrasive, 5-10 parts of oxidant and 30-80 parts of conductive filler.
2. The elastic polishing wheel according to claim 1, characterized in that: The rubber is one or more of natural rubber, styrene-butadiene rubber, butadiene rubber, butyl rubber, isoprene rubber, nitrile rubber, EPDM rubber and chloroprene rubber.
3. The elastic polishing wheel according to claim 1, characterized in that: The vulcanizing agent is a combination of sulfur, dicumyl peroxide, epoxy resin liquid or phenolic resin; the vulcanization accelerator is one of mercaptan benzothiazole, dibenzothiazole disulfide and tetramethylthiuram disulfide; and the vulcanization activator is ZnO and stearic acid.
4. The elastic polishing wheel according to claim 1, characterized in that: The antioxidant is antioxidant 4020, antioxidant 4010NA or antioxidant RD, and the abrasive is one or more combinations of diamond, cubic boron nitride, silicon carbide, cerium oxide, zirconium oxide, silicon dioxide, iron oxide, aluminum oxide and magnesium oxide.
5. The elastic polishing wheel according to claim 1, characterized in that: The conductive filler is one or more of carbon black, graphite powder, graphene, carbon fiber and carbon nanotube; the oxidant is one of KClO4, KMnO4, K2Cr2O7, KClO3 and NaAsO3.
6. The method for preparing the elastic polishing wheel according to any one of claims 1 to 5, characterized in that: The steps include: (1) mixing the rubber, adding a vulcanization activator, an antioxidant, a vulcanization accelerator, a vulcanizing agent, a conductive filler, an oxidant and an abrasive for mixing to obtain a mixed rubber, and leaving the mixed rubber at room temperature; (2) The rubber mixture is hot pressed and hardened to obtain an elastic polishing wheel.
7. The method for preparing the elastic polishing wheel according to claim 6, characterized in that: The process of rubber mixing in step (1) is: temperature of 80-120° C., continuous rolling; the mixing process is: continuous rolling, finally thinning through 5 times, and unrolling at a roller distance of 1-2 mm.
8. The method for preparing the elastic polishing wheel according to claim 6, characterized in that: The temperature of the hot pressing molding in step (2) is 100-180° C., the pressure is 1-5 MPa, and the time is 120-240 min.
9. The method for preparing the elastic polishing wheel according to claim 6, characterized in that: The hardening temperature in step (2) is 100-180° C. and the hardening time is 6-10 hours.
10. Application of the elastic polishing wheel according to any one of claims 1 to 5 in wafer polishing, characterized in that: The wafer is glass, sapphire, silicon wafer or silicon carbide.
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