A method for preparing a high-hardness, high-wear-resistance carbon self-doped silicon carbide semiconductor thin film

Abstract

The application discloses a preparation method of high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film, and relates to the technical field of semiconductors. The cleaning equipment comprises an ultrasonic cleaning tank and a hanging basket matched with the ultrasonic cleaning tank. The front face and the back face of the ultrasonic cleaning tank are fixedly connected with fixed plates. The front face of the ultrasonic cleaning tank is fixedly connected with a mounting plate. The mounting plate is provided with a driving mechanism. The fixed plate is provided with a shaking mechanism matched with the driving mechanism and used for driving the hanging basket to shake. The driving mechanism and the shaking mechanism are matched with each other. After the substrate is cleaned by ultrasonic waves, the hanging basket is lifted and reciprocatingly shaken, the residual chemical liquid on the substrate material can be treated, and the pollution to the surrounding environment is reduced when the substrate is taken out.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductors, and particularly relates to a preparation method of a high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film. BACKGROUND

[0002] Silicon carbide is a very hard wear-resistant material, has high wear resistance and high stability, and is widely used in automobiles, thermocouples and mechanical seals. As a semiconductor material, silicon carbide is the third generation of semiconductor materials, and with the development of science and technology, the demand for electronic components that can work in extreme conditions is becoming more and more urgent. Therefore, silicon carbide as a wide bandgap semiconductor material emerges as the times require. In the conventional preparation process, sometimes the semiconductor performance is emphasized, but the wear resistance or conductivity cannot be further adjusted, which limits the further development of wide bandgap semiconductor silicon carbide to a certain extent.

[0003] The existing preparation of semiconductor films will use a substrate material, which needs to be cleaned before use. The existing cleaning method is to place the substrate material in a tank containing a chemical liquid and clean it with ultrasonic waves. When the cleaned substrate material is taken out, the chemical liquid remaining on the substrate material will drop, which will pollute the surrounding environment. SUMMARY

[0004] The present application aims to at least solve the technical problems existing in the prior art. To this end, the present application provides a preparation method of a high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film.

[0005] The object of the present application can be achieved by the following technical solutions:

[0006] A preparation method of a high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor film, comprising the following steps:

[0007] Step one, select glass as a substrate material, and clean the substrate material with a cleaning device, then use a shaking mechanism to clean the cleaning liquid on the substrate material;

[0008] Step two, use a high-purity graphite target as a self-doped target material, and start the graphite target according to the needs during the whole process; use a silicon carbide ceramic target as a main sputtering target material, and simultaneously use high-purity argon gas as a sputtering gas;

[0009] Step three, vacuumize the sputtering chamber, start the target material when the vacuum degree reaches a certain value, and start the main sputtering target material and the corresponding doped target material according to the sputtering process requirements;

[0010] Step four, before formal sputtering, first pre-sputtering, and then set the coating process parameters, preparation of high hardness, high wear resistance of carbon self-doped silicon carbide semiconductor film; after coating, 200 DEG C vacuum annealing.

[0011] As a further scheme of the present application: the cleaning device comprises an ultrasonic cleaning tank and a hanging basket matched with the ultrasonic cleaning tank, the front and back surfaces of the ultrasonic cleaning tank are fixedly connected with fixed plates, the front surface of the ultrasonic cleaning tank is fixedly connected with a mounting plate, the mounting plate is provided with a driving mechanism, and the fixed plates are provided with a shaking mechanism used in cooperation with the driving mechanism to drive the hanging basket to shake.

[0012] As a further scheme of the present application: the shaking mechanism comprises a buckle plate and a first connecting plate fixedly connected on the top of the fixed plate, a bottom plate is slidably connected between the buckle plate and the fixed plate, a second connecting plate is fixedly connected to one side of the bottom plate, a spring is fixedly connected between the second connecting plate and the first connecting plate, and the bottom plate is provided with a lifting mechanism for supporting the hanging basket.

[0013] As a further scheme of the present application: the lifting mechanism comprises a gas cylinder fixedly connected on the top of the bottom plate, a connecting block fixedly connected to the output end of the gas cylinder, a fixing frame fixedly connected to the connecting block, and a lifting block fixedly connected to the fixing frame.

[0014] As a further scheme of the present application: the driving mechanism comprises a motor fixedly connected on the top of the mounting plate, a rotating shaft fixedly connected to the output end of the motor, and a cam fixedly connected to the bottom plate and used in cooperation with the bottom plate.

[0015] As a further scheme of the present application: one side of the ultrasonic cleaning tank is fixedly connected with a connecting seat, and the connecting seat is rotatably connected with the rotating shaft.

[0016] As a further scheme of the present application: both sides of the ultrasonic cleaning tank are fixedly connected with supporting strips and clamping plates, the top of each supporting strip is placed with a baffle, the baffles are slidably connected with the clamping plates and the ultrasonic cleaning tank respectively, and the baffles are connected with the fixing frame through a moving mechanism.

[0017] As a further scheme of the present application: the moving mechanism comprises a straight rod fixedly connected with the fixing frame and a protruding block fixedly connected with the baffle, a through hole is formed in one side of the protruding block, and the straight rod is slidably connected with the through hole.

[0018] Compared with the prior art, the present application has the following advantages:

[0019] (1) The application can improve the wear resistance and hardness of the silicon carbide film and improve the conductivity of the film through the co-doping of the main and auxiliary target materials, so as to meet the use requirements of related components.

[0020] (2) The application can process the chemical liquid remaining on the substrate material through the cooperation of the driving mechanism and the shaking mechanism after the substrate is cleaned by the ultrasonic wave, and the basket is lifted and reciprocally shaken, so as to reduce the pollution to the surrounding environment when the substrate is taken out.

[0021] (3) The application can prevent the chemical liquid from splashing out of the ultrasonic cleaning tank when the basket is shaken by lifting the baffle when processing the chemical liquid remaining on the substrate material. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 is a perspective view of the application;

[0023] Figure 2 is a perspective view of the shaking mechanism of the application;

[0024] Figure 3 is a perspective view of the application Figure 2 is a partial enlarged view of A in the application;

[0025] Figure 4 is a perspective view of the ultrasonic cleaning tank of the application;

[0026] Figure 5 is a perspective view of the baffle of the application.

[0027] In the figure: 1, ultrasonic cleaning tank; 2, basket; 3, fixed plate; 4, mounting plate; 5, driving mechanism; 51, motor; 52, rotating shaft; 53, cam; 6, shaking mechanism; 61, buckle plate; 62, first connecting plate; 63, bottom plate; 64, second connecting plate; 65, spring; 66, lifting mechanism; 661, air cylinder; 662, connecting block; 663, fixed frame; 664, lifting block; 7, support bar; 8, clamping plate; 9, baffle; 10, moving mechanism; 101, straight rod; 102, protruding block; 103, through hole; 11, connecting seat. DETAILED DESCRIPTION

[0028] The technical solutions of the application will be described clearly and completely in combination with the embodiments. Obviously, the described embodiments are only a part of the embodiments of the application, not all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the application.

[0029] Example 1

[0030] Please refer to Figures 1-4As shown, the present application provides a preparation method of high hardness and high wear resistance carbon self-doped silicon carbide semiconductor film, comprising the following steps:

[0031] Step one, select glass (silicon wafer, etc.) as substrate material (with ultra-white glass as substrate material), and clean the substrate material by using cleaning equipment, then use the shaking mechanism 6 to clean the cleaning liquid on the substrate material;

[0032] Step two, use high-purity graphite target as self-doped target material, start the graphite target according to the needs in the whole process, use silicon carbide ceramic target as main sputtering target material, and use high-purity argon as sputtering gas (use high-purity silicon carbide and graphite as main and auxiliary sputtering target materials);

[0033] Step three, vacuumize the sputtering chamber, start the target when the vacuum degree reaches a certain value, and start the main sputtering target and the corresponding doped target according to the sputtering process requirements;

[0034] Step four, before formal sputtering, first pre-sputter, then set the film coating process parameters, prepare the high hardness and high wear resistance carbon self-doped silicon carbide semiconductor film, and perform 200℃ vacuum annealing after coating.

[0035] The cleaning equipment comprises an ultrasonic cleaning tank 1 and a hanging basket 2 matched with the ultrasonic cleaning tank 1, the hanging basket 2 is used for placing the substrate, the front and back surfaces of the ultrasonic cleaning tank 1 are fixedly connected with fixed plates 3, the front surface of the ultrasonic cleaning tank 1 is fixedly connected with a mounting plate 4, the mounting plate 4 is provided with a driving mechanism 5, and the fixed plate 3 is provided with a shaking mechanism 6 used in cooperation with the driving mechanism 5 to drive the hanging basket 2 to shake.

[0036] The shaking mechanism 6 comprises a buckle plate 61 and a first connecting plate 62 fixedly connected to the top of the fixed plate 3, a bottom plate 63 slidably connected between the buckle plate 61 and the fixed plate 3, a second connecting plate 64 fixedly connected to one side of the bottom plate 63, a spring 65 fixedly connected between the second connecting plate 64 and the first connecting plate 62, and a lifting mechanism 66 provided on the bottom plate 63 to support the hanging basket 2.

[0037] The lifting mechanism 66 comprises a gas cylinder 661 fixedly connected to the top of the bottom plate 63, the gas cylinder 661 is electrically connected with an external power supply and controlled by an external control program, the output end of the gas cylinder 661 is fixedly connected with a connecting block 662, the connecting block 662 is fixedly connected with a fixing frame 663, and the fixing frame 663 is fixedly connected with a lifting block 664.

[0038] The driving mechanism 5 includes a motor 51 fixedly connected on the top of the mounting plate 4, the motor 51 is electrically connected with an external power supply and is controlled by an external control program, the output end of the motor 51 is fixedly connected with a rotating shaft 52, the rotating shaft 52 is fixedly connected with a cam 53 used in cooperation with the bottom plate 63, by opening the air cylinder 661, the fixed frame 663 is lifted through the connecting block 662, and then the lifting block 664 lifts the hanging basket 2, then the motor 51 is started, and then the motor 51 drives the cam 53 to rotate through the rotating shaft 52, so that the cam 53 pushes the bottom plate 63 in the process of rotating, and is used in cooperation with the first connecting plate 62, the second connecting plate 64 and the spring 65, so that the bottom plate 63 reciprocates between the buckle plate 61 and the fixed plate 3, so as to drive the air cylinder 661 to reciprocate, and then drive the hanging basket 2 to reciprocate, so as to treat the residual liquid on the substrate material, and reduce the pollution to the surrounding environment when the substrate is taken out.

[0039] The ultrasonic cleaning tank 1 is fixedly connected with a connecting seat 11 on one side, because the rotating shaft 52 is long, the connecting seat 11 can support the rotating shaft 52, and the connecting seat 11 is rotatably connected with the rotating shaft 52.

[0040] Example two

[0041] On the basis of example one, see Figure 1 , Figure 2 and Figure 5 .

[0042] The ultrasonic cleaning tank 1 is fixedly connected with a supporting strip 7 and a clamping plate 8 on both sides, the top of the supporting strip 7 is placed with a baffle 9, the baffle 9 is slidably connected with the clamping plate 8 and the ultrasonic cleaning tank 1 respectively, and the baffle 9 is connected with the fixed frame 663 through the moving mechanism 10, when the residual liquid on the substrate material is treated, the baffle 9 can be pulled up, so that the liquid in the ultrasonic cleaning tank 1 can be prevented from splashing out when the hanging basket 2 is shaken.

[0043] The moving mechanism 10 includes a straight rod 101 fixedly connected with the fixed frame 663 and a protruding block 102 fixedly connected with the baffle 9, a through hole 103 is formed in one side of the protruding block 102, and the straight rod 101 is slidably connected with the through hole 103, in the process of lifting the hanging basket 2, the baffle 9 is lifted by the straight rod 101 (part of the baffle 9 is still clamped in the clamping plate 8), in the process of reciprocating the hanging basket 2, the straight rod 101 slides in the through hole 103 (the straight rod 101 does not come off from the through hole 103), and the baffle 9 remains stationary, so that the baffle 9 can prevent the liquid in the ultrasonic cleaning tank 1 from splashing out when the hanging basket 2 is shaken.

[0044] The working principle of the present application: taking high-purity silicon carbide and graphite as sputtering main and auxiliary target materials, taking super white glass as substrate material, first, the glass substrate material is cleaned by ultrasonic wave according to the conventional method, and then dried, put into the magnetron sputtering chamber, the main and auxiliary targets use direct current power supply. When the vacuum degree in the sputtering chamber reaches 8.0*10 -45 Pa, argon gas is introduced to make the target material glow at the same time, and pre-sputtering is carried out, and then the process parameters are adjusted, specifically: main target power 100w, auxiliary target power 50w, work gas pressure is kept at 1.5Pa, sputtering time 30min, Ar: 15, the auxiliary target is closed at the 29th minute, and finally the carbon self-doped silicon carbide semiconductor thin film with silicon carbide surface is obtained. After the preparation of the thin film is completed, it is subjected to 200℃ vacuum heat treatment to achieve the uniformity of carbon doping and the effect of reducing the internal stress of the thin film. Through the performance test of the prepared thin film: the hardness shows hard, the wear resistance is very good, and the electrical performance is also in the semiconductive range, and all the performances can be adjusted according to the performance requirements.

[0045] After the substrate material is cleaned, the cylinder 661 is opened, the fixed frame 663 is lifted through the connecting block 662, the hanging basket 2 is lifted through the lifting block 664, then the motor 51 is opened, the motor 51 drives the cam 53 to rotate through the shaft 52, the cam 53 pushes the bottom plate 63 in the process of rotating, and the first connecting plate 62, the second connecting plate 64 and the spring 65 are used in cooperation, so that the bottom plate 63 reciprocates between the buckle plate 61 and the fixed plate 3, so as to drive the cylinder 661 to reciprocate, and then drive the hanging basket 2 to reciprocate, so as to treat the residual liquid on the substrate material, and reduce the pollution to the surrounding environment when taking out the substrate. In the process of lifting the hanging basket 2, the baffle 9 is lifted by the straight rod 101 (part of the baffle 9 is still clamped in the clamping plate 8), in the process of reciprocating the hanging basket 2, the straight rod 101 slides in the through hole 103 (the straight rod 101 does not separate from the through hole 103), and the baffle 9 is always kept stationary, so that the baffle 9 can prevent the liquid from spilling out of the ultrasonic cleaning tank 1 when the hanging basket 2 is shaken.

[0046] The above examples are only used to illustrate the technical method of the present application, not to limit it. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical method of the present application can be modified or replaced equivalently without departing from the spirit and scope of the technical method of the present application.

Claims

1. A method for preparing a high-hardness, high-wear-resistant carbon self-doped silicon carbide semiconductor thin film, characterized in that: The method comprises the following steps: Step 1: glass is selected as the substrate material, and the substrate material is cleaned by a cleaning device, and then the cleaning liquid on the substrate material is treated clean by a shaking mechanism (6); Step 2: a high-purity graphite target is used as a self-doped target material, and the graphite target is started according to the needs during the whole process, a silicon carbide ceramic target is used as a main sputtering target material, and high-purity argon is used as a sputtering gas; Step 3: the sputtering chamber is vacuumized, and when the vacuum degree reaches a certain value, the target material is started, and according to the sputtering process requirements, the main sputtering target material and the corresponding doped target material are started; Step 4: before formal sputtering, pre-sputtering is first performed, and then the film forming process parameters are set to prepare a high-hardness and high-wear-resistance carbon self-doped silicon carbide semiconductor thin film, and after the plating is completed, 200 DEG C vacuum annealing is performed. The cleaning device comprises an ultrasonic cleaning tank (1) and a hanging basket (2) matched with the ultrasonic cleaning tank (1), the front and back surfaces of the ultrasonic cleaning tank (1) are fixedly connected with fixed plates (3), the front surface of the ultrasonic cleaning tank (1) is fixedly connected with a mounting plate (4), the mounting plate (4) is provided with a driving mechanism (5), and the fixed plates (3) are provided with a shaking mechanism (6) matched with the driving mechanism (5) for driving the hanging basket (2) to shake. The shaking mechanism (6) comprises a buckle plate (61) and a first connecting plate (62) fixedly connected to the top of the fixed plate (3), a bottom plate (63) is slidably connected between the buckle plate (61) and the fixed plate (3), one side of the bottom plate (63) is fixedly connected with a second connecting plate (64), the second connecting plate (64) and the first connecting plate (62) are fixedly connected with springs (65), and the bottom plate (63) is provided with a lifting mechanism (66) for supporting the hanging basket (2). The lifting mechanism (66) comprises a gas cylinder (661) fixedly connected to the top of the bottom plate (63), the output end of the gas cylinder (661) is fixedly connected with a connecting block (662), the connecting block (662) is fixedly connected with a fixing frame (663), and the fixing frame (663) is fixedly connected with a lifting block (664). The driving mechanism (5) comprises a motor (51) fixedly connected to the top of the mounting plate (4), the output end of the motor (51) is fixedly connected with a rotating shaft (52), and the rotating shaft (52) is fixedly connected with a cam (53) matched with the bottom plate (63).

2. The method of claim 1, wherein the carbon self-doped silicon carbide semiconductor thin film has high hardness and high wear resistance. One side of the ultrasonic cleaning tank (1) is fixedly connected with a connecting seat (11), and the connecting seat (11) is rotatably connected with the rotating shaft (52).

3. The method of claim 1, wherein the carbon self-doped silicon carbide semiconductor thin film has high hardness and high wear resistance. Both sides of the ultrasonic cleaning tank (1) are fixedly connected with supporting strips (7) and clamping plates (8), the top of the supporting strip (7) is placed with a baffle (9), the baffle (9) is slidably connected with the clamping plate (8) and the ultrasonic cleaning tank (1) respectively, and the baffle (9) is connected with the fixing frame (663) through a moving mechanism (10).

4. The method according to claim 3, wherein the carbon self-doped silicon carbide semiconductor thin film has high hardness and high wear resistance. The moving mechanism (10) comprises a straight rod (101) fixedly connected to a fixed frame (663) and a protrusion (102) fixedly connected to the baffle (9), one side of the protrusion (102) is provided with a through hole (103), and the straight rod (101) is in sliding connection with the through hole (103).

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