Apparatus for manufacturing semiconductor device

Abstract

Apparatus (10) for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied onto the substrate by a chemical vapor deposition (CVD) process, comprising: a processing chamber (2) in which the substrate (101) is arranged in a linear structure (101 ') along a first reference axis (Z) of the processing chamber (2) and according to an orientation of the substrate (101) in a parallel plane orthogonal to the first reference axis (Z); a heating system for heating the processing chamber (2) to a predetermined internal temperature; a transport unit (4) for transporting a process gas to the process chamber (2) in which the process gas undergoes a CVD process to form a film on each substrate (101) of the linear structure; and an exhaust gas extraction unit (6) for extracting the treatment exhaust gas from the treatment chamber (2).

Description

Technical Field

[0001] The present invention relates to an apparatus for manufacturing a semiconductor device of the type comprising a substrate and a film applied to the substrate by a chemical vapor deposition (CVD) process. Background Art

[0002] This type of apparatus includes a process chamber in which a plurality of substrates are arranged and in which a process gas supplied to the process chamber undergoes a CVD process to form films on the plurality of substrates.

[0003] One aspect of a manufacturing process performed by such an apparatus may be that the CVD process should result in the formation of substantially identical films (eg, having substantially the same thickness) on each substrate disposed in the processing chamber.

[0004] This can be achieved when uniform conditions such as temperature, gas flow and pressure are established for all locations occupied by multiple substrates in the processing chamber.

[0005] JP2014123616A, JP5783859B2 and JP2550024B2 disclose some prior art devices. Summary of the invention

[0006] The present invention provides an apparatus for manufacturing a semiconductor device.

[0007] The present invention generally relates to a device according to claim 1 .

[0008] The invention also relates to a method according to claim 20.

[0009] The claims form an integral part of the teaching provided herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Other characteristics and advantages of the invention will become apparent from the following description, which makes reference to the accompanying drawings, which are provided by way of non-limiting example only, in which:

[0011] - Figure 1 A preferred embodiment of the apparatus described herein is shown;

[0012] - Figure 2 Shows Figure 1 The inner housing of the device;

[0013] - Figure 3 Shows Figure 1 sectional views of different parts of the device in order to illustrate its internal area;

[0014] - Figure 4 Shows Figure 1 The housing of the equipment;

[0015] - Figure 5 Shown is a partially disassembled Figure 4 Shell;

[0016] - Figure 6 Shown in Figure 1 A linear structure of a substrate on which a film is deposited by a CVD process implemented in an apparatus;

[0017] - Figure 7 and Fig. 7A The assembled and disassembled states are shown respectively. Figure 1 The conveying unit of the equipment;

[0018] - Figure 7B yes Figure 7 Side view of the conveying unit, Figure 7C The conveying unit is shown in Figure 7B A cross section in plane II is shown;

[0019] - Figure 8 and Fig. 8A The assembled and disassembled states are shown respectively. Figure 1 Exhaust gas extraction units of equipment;

[0020] - Figure 8B yes Figure 8 Side view of the exhaust gas extraction unit, Figure 8C The exhaust gas extraction unit is shown in Figure 8B A cross section in plane II-II is shown;

[0021] - Fig. 9 yes Figure 1 Schematic diagram of the device. DETAILED DESCRIPTION

[0022] The following description describes various specific details intended to provide a deeper understanding of the embodiments. The embodiments may be implemented without one or more of the specific details, or with other methods, components, materials, etc. In other cases, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring various aspects of the embodiments.

[0023] The references used herein are purely for convenience and therefore do not limit the scope of protection or the scope of the embodiments.

[0024] As described above, the apparatus described herein is an apparatus for manufacturing a semiconductor device of the type comprising a substrate and a film applied (e.g., deposited) onto the substrate by a chemical vapor deposition (CVD) process or a low pressure chemical vapor deposition (LPCVD) process. For example, the deposited film may include or consist of silicon carbide.

[0025] Reference Figures 1 to 8The device is generally indicated by reference numeral 10 and comprises:

[0026] - a process chamber 2 in which a substrate 101 (for example a silicon or graphite wafer) to be subjected to a CVD process is arranged;

[0027] a delivery unit 4 for delivering the process gas to the process chamber, and

[0028] - An exhaust gas extraction unit 6 for extracting process exhaust gases from the process chamber.

[0029] In one or more preferred embodiments, such as the illustrated embodiment (see Figures 4 to 6 ), the device 10 includes a housing 8, which surrounds the process chamber 2 and has an inlet 8A for receiving the process gas injected by the delivery unit 4 and an outlet 8B for guiding the process exhaust gas to the exhaust gas extraction unit 6.

[0030] In one or more preferred embodiments, such as the illustrated embodiment, the housing 8 comprises an inlet section 8C, a central section 8D and an outlet section 8E, which are arranged continuously along the reference axis Y.

[0031] The central section 8D surrounds the process chamber 2. On the other hand, the inlet section 8C includes an inlet 8A, and the outlet section 8E includes an outlet 8B; both the inlet 8A and the outlet 8B are in fluid communication with the process chamber 2 surrounded by the central section 8D.

[0032] The central section 8D is configured to receive a plurality of substrates 101 arranged in a linear configuration 101 ′ along a reference axis Z orthogonal to the reference axis Y and according to an orientation of the substrates 101 in parallel planes orthogonal to the reference axis Z.

[0033] In one or more preferred embodiments, such as the illustrated embodiment, reference axis Z is vertical and reference axis Y is horizontal.

[0034] In an alternative embodiment, reference axis Z is horizontal and reference axis Y is vertical. In another alternative embodiment, reference axes Z and Y are both horizontal.

[0035] The substrate 101 is preferably loaded on a support 7 (or any other equivalent frame) configured to hold and support the substrate according to the linear structure 101 ′ described above.

[0036] In the example shown, the support 7 comprises two opposite disc-shaped ends 7A connected together by three longitudinal posts 7B positioned on the peripheral edges of the two ends 7A at a constant mutual angular distance of 120°.

[0037] The pillars 7B have a corresponding longitudinal series of inwardly projecting pins (not visible) which support the substrate 101 in parallel lying planes according to the arrangement of the linear structures 101 ′.

[0038] Preferably, the support 7 is equipped with a rotating mechanism (not shown) for rotating the support 7 and the substrate 101 carried thereby around a rotation axis parallel to the reference axis Z during the CVD process.

[0039] The housing 8 is configured to establish a pressure difference between the inlet 8A and the outlet 8B, generating an airflow from the inlet 8A to the outlet 8B through the housing 8. In particular, the generated airflow moves along the reference axis Y, sequentially passing through the inlet section 8C, the central section 8D, and the outlet section 8E; in the central section 8D, the airflow passes through the substrate linear structure 101' and flows through all substrates 101.

[0040] In one or more preferred embodiments, such as the illustrated embodiment, housing 8 has a cross-sectional flow area whose dimension H along reference axis Z is uniform and constant across inlet section 8C, central section 8D, and outlet section 8E.

[0041] On the other hand, in one or more preferred embodiments, such as the illustrated embodiment, the cross-sectional flow area of ​​the housing 8 has a dimension L in a direction orthogonal to the reference axis Z, which increases at the center section 8D relative to the inlet section 8C and the outlet section 8E; due to this feature, the air flow velocity in the center section 8D is lower than the air flow velocity in the inlet and outlet sections 8C, 8E.

[0042] The housing 8 is preferably made of a thermally conductive and high temperature resistant material; by the way, note that "high temperature" refers to temperatures above 1000° C. and up to 1400° C., which represents the temperature range typically required in a process chamber during a CVD process. Preferably, the housing 8 is made of graphite.

[0043] In view of the above, the housing 8 is configured as a shaped duct which surrounds the process chamber 2 and creates a fluid dynamic system which controls the supply of process gases to the process chamber 2 and the removal of process exhaust gases from the same process chamber.

[0044] In one or more preferred embodiments, such as the illustrated embodiment, the inlet section 8C comprises a series of fins 8F extending in a linear configuration parallel to the reference axis Z and facing the inlet 8A; each fin 8F is orthogonal to the reference axis Z, and all fins 8F are equally spaced and positioned along the axis Z so as to evenly distribute and direct the airflow entering the housing inlet 8A to a plurality of locations corresponding to the locations of the substrate 101 in the linear configuration 101 '. Preferably, the fins 8F are made of graphite.

[0045] From a structural point of view, the housing 8 can be implemented in different ways depending on the needs of a specific application.

[0046] In one or more preferred embodiments, such as the illustrated embodiment, the housing 8 includes a pair of opposing walls 81 and a pair of end caps 82, wherein the pair of opposing walls 81 both extend substantially along the reference axis Y, and the pair of end caps 82 are mounted to edges 81' of the pair of walls 81 that are opposite to each other along the reference axis Z.

[0047] With reference to the reference axis Y, each of the pair of opposing walls 81 has an upstream end flat portion 81C, a downstream end flat portion 81E, and a central recessed (eg, cylindrical) portion 81D having a convex side facing the outside of the housing 8 .

[0048] Similarly, with reference to the reference axis Y, each of the pair of end covers 82 has an upstream end flat portion 82C, a downstream end flat portion 82E, and a center flat portion 82D.

[0049] A pair of walls 81 and a pair of end caps 82 are assembled together to form the housing 8, in particular in such a manner that:

[0050] - upstream end flat portions 81C of a pair of opposing walls 81 and upstream end flat portions 82C of a pair of end covers 82 together form an inlet section 8C of the housing 8;

[0051] - a central section 81D of a pair of opposing walls 81 and a central section 82D of a pair of end caps 82 together form a central section 8D of the housing 8; and

[0052] The downstream end flat portions 81E of the pair of opposing walls 81 and the downstream end flat portions 82E of the pair of end covers 82 together form the outlet section 8E of the housing 8 .

[0053] Furthermore, the apparatus 10 includes a heating system for heating the process chamber 2 to a predetermined internal temperature, which is typically within the above-mentioned temperature range of 1000° C. to 1400° C.

[0054] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 ), the heating system includes a plurality of heaters 3, which are located outside the housing 8 and generate heat radiation to heat the housing 8.

[0055] The radiation-heated housing 8 constitutes a “hot wall” which in turn heats the process chamber 2 and the substrate accommodated therein to a predetermined internal temperature.

[0056] In one or more preferred embodiments, such as the illustrated embodiment, the heater 3 extends longitudinally parallel to a reference axis Z and has a length substantially equal to the dimension of the housing 8 along the same axis Z (ie the height in the illustrated example).

[0057] In one or more preferred embodiments, such as the illustrated embodiment, the heating system comprises two series 3A, 3B of thermal radiation heaters 3 arranged outside the housing to face and extend along a pair of opposing walls 81; in particular, in one or more preferred embodiments, such as the illustrated embodiment, each series of heaters 3 follows a line M matching the contour of the corresponding facing wall 81 along the reference axis Y. Preferably, each series of heaters 3 is spaced equidistant from each other.

[0058] In one or more embodiments, such as the one shown, each series 3A or 3B extends substantially from the beginning of the upstream end 81C of the corresponding wall 81 to the end of its central section 81D.

[0059] Therefore, the heater 3 is arranged to heat mainly the inlet section 8C and the central section 8D of the housing 8 .

[0060] Preferably, the heating system is configured to heat the inlet section 8C to a higher temperature than the central section 8D.

[0061] To this end, in one or more preferred embodiments, such as the illustrated embodiment, each series of heaters 3 has an additional heater 3' in the area of ​​the inlet section 8D, which is arranged after the line M (i.e., farther away from the housing 8 than the line M) and is preferably located in an intermediate position between one heater 3 and the next heater 3 in the series.

[0062] In this way, the heating system is able to determine a steeper increase in the temperature of the process gas flowing through the inlet section 8C of the housing 8 .

[0063] The delivery unit 4 and the exhaust gas extraction unit 6 are both arranged outside the housing 8 and are fluidly connected to the housing 8 (as will be described in more detail below), so that the treated gas ejected by the delivery unit 4 can reach the inlet 8A of the housing 8, and the treated exhaust gas flowing out of the housing 8 via the outlet 8B can reach the extraction unit 6.

[0064] In one or more preferred embodiments, such as the illustrated embodiment (see Figures 1 to 3 ), the device 10 includes a fixed base 12 supporting the housing 8, the conveying unit 4 and the exhaust gas extraction unit 6.

[0065] The base 12 comprises a plate 12A, for example made of steel, having a first seat 12B for receiving the delivery unit 4 and a second seat 12C for receiving the exhaust gas extraction unit 6 .

[0066] The insulating block 12D is arranged on the plate 12A, between the first and second seats 12B, 12C, and is configured to receive the casing 8 on itself, separating it from the plate 12A. Preferably, the insulating block 12D is made of foam, even more preferably of graphite foam.

[0067] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 7 , 7A , 7B and 7C), the conveying unit 4 is provided with an internal cooling pipe 44 (see Figure 7C ) for cooling the process gas before it is ejected by the delivery unit. The cooling pipe 44 is connected to a system for thermally regulating a cooling medium (eg, water) and circulating it through the cooling pipe 44.

[0068] The cooling effect exerted by the cooling medium circulating through the cooling pipe 44 has the function of keeping the temperature of the process gas below a predetermined threshold until it reaches the housing 8, thereby avoiding premature activation of the reaction of the process gas. This prevents the process gas from being consumed prematurely and therefore wasted, and also prevents the risk of the delivery unit 4 being blocked by particles generated by the reaction of the process gas.

[0069] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 7 , 7A , 7B and 7C), the conveying unit 4 includes a conveying hanger 42, and the conveying hanger 42 is provided with a connecting portion 41 at its lower end.

[0070] The connection part 41 is housed in the seat 12B of the plate 12A and is provided with an outer flange 41A for fixing the conveying unit to the plate 12A, for example by means of screws.

[0071] In addition, the transport hanger 42 is accommodated in a pair of opposing columns 11 (see Figure 2 and 3 ) in the space between, the pair of opposing columns 11 are fixed to the insulating block 12D of the base 12 and extend parallel to the reference axis Z; the transport hanger 42 is fixed to these two columns 11, for example by screws.

[0072] The connection portion 41 has an inlet 41C through which the process gas enters the transport unit 4 , and an inlet 41D and an outlet 41E forming a part of a cooling pipe 44 provided in the transport unit 4 .

[0073] Inlet 41C is fluidly connected to a source of process gas. Inlet 41D and outlet 41E, on the other hand, are connected to the above-mentioned system for heat regulation and circulation of cooling medium.

[0074] Reference Figure 3 , 7 , 7A, 7B and 7C, the transport hanger 42 has a closed housing 42B, which extends from the connection part 41 parallel to the reference axis Z and is internally fluidly connected to the inlet 41C of the connection part 41.

[0075] The housing 42B includes one side which is defined by the baffle 42A and faces the inlet 8A of the housing 8 .

[0076] The baffle 42A has a plurality of holes 42 ′ through which the process gas supplied to the delivery unit 4 via the inlet duct 41C is ejected out of the delivery unit toward the inlet 8A of the housing 8 .

[0077] The above-mentioned plurality of holes 42' are formed over almost the entire extending area in the baffle plate 42A.

[0078] The dimensions of the baffle 42A along the reference axis Z and in a direction orthogonal thereto are approximately equal to the corresponding dimensions of the inlet 8A.

[0079] In one or more preferred embodiments, such as the illustrated embodiment, the transport hanger 42 further includes an inner baffle 42A', which is adjacent to and parallel to the baffle 42A.

[0080] The inner baffle 42A′ preferably has a greater width (in a direction orthogonal to the reference axis Z) than the baffle 42A and has a plurality of holes positioned according to a staggered arrangement relative to the holes of the baffle 42A.

[0081] The side of the shell 42B opposite to the baffle 42A is closed by a cover 42C; in order to prevent leakage of the processing gas, a first seal 42D is installed between the cover 42C and the inner baffle 42A', a second seal 42E is installed between the inner baffle 42A' and the baffle 42A, and a third seal 42F is installed between the baffle 42A and the periphery 42G of the shell 42B.

[0082] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 7 , 7A , 7B and 7C), the baffle 42A is arranged at a position displaced inwardly relative to the end 42H of the shell 42B, and the end 42H is located on the same side of the shell 42B as the baffle 42A and surrounds the latter.

[0083] The end portion 42H protrudes beyond the baffle 42A in the direction toward the housing 8 and forms a central duct section 42I through which the process gas flowing out from the interior of the housing 42B via the baffle 42A passes.

[0084] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 7 , 7A , 7B and 7C), the cooling pipe 44 is realized as a cavity made in the wall of the shell 42B and the connecting part 41.

[0085] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 7 , 7A, 7B and 7C), the cooling pipe 44 is made in the end 42H of the shell 42B and is arranged to surround the duct section 42I, extend along a trajectory contained in a plane parallel to the baffle 42A, and follow the contour of the baffle 42A, in particular the contour of its two vertical sections and the horizontal section thereon.

[0086] In view of the above, it can be noted that this arrangement of the cooling tubes 44 enables the cooling medium to perform its cooling function in which the process gas flow is already exposed to the heating housing 8, as is the case with the delivery unit 4. In this way, the cooling function performed by the cooling medium shows maximum efficacy in keeping the temperature of the process gas below a predetermined threshold, and also protects the delivery unit 4 from the high temperatures of the heating housing 8.

[0087] Similar to the conveying unit 4, in one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 , 8 , 8A, 8B and 8C), the exhaust gas extraction unit 6 is provided with a cooling pipe 64 for cooling the treated exhaust gas received from the housing 8. The cooling pipe 64 is connected to a system for thermally regulating a cooling medium (e.g., water) and circulating it through the cooling pipe 44.

[0088] The cooling effect operated by the cooling medium circulating through the cooling pipes 64 has the function of lowering the exhaust gas temperature below a predetermined threshold value in order to prevent possible process gas residues in the exhaust gas from starting process reactions and generating particles that could cause blockages in the extraction unit.

[0089] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 , 8 , 8A, 8B and 8C), the exhaust gas extraction unit 6 includes an extraction hanger 62, and the extraction hanger 62 is provided with a connecting portion 61 at its lower end.

[0090] The connection portion 61 is housed in the seat 12C of the plate 12A and is provided with an outer flange 61A for fixing the extraction unit 6 to the plate 12A, for example by screws.

[0091] On the other hand, the extraction hanger 62 is accommodated in a pair of opposite columns 13 (see Figure 2 and 3 ) in the space between the two columns 13, the column 13 is fixed to the insulating block 12D of the base 12 and extends parallel to the reference axis Z; the extraction hanger 62 is fixed to the two columns 13, for example by screws.

[0092] The connection part 61 has an outlet pipe 61C through which the exhaust gas sucked by the extraction hanger 62 flows out of the extraction unit 6, and also has an inlet 61D and an outlet 61E forming part of a cooling pipe 64 provided in the extraction unit 6. The inlet 61D and the outlet 61E are connected to the above-mentioned system for heat regulation and circulation of the cooling medium.

[0093] In one or more preferred embodiments, such as the one shown, the extraction hanger 62 has a closed housing 62B extending parallel to the reference axis Z and in internal fluid communication with the outlet duct 62C of the connection 61 .

[0094] In one or more preferred embodiments, such as the illustrated embodiment, the housing 62B includes a side defined by the baffle 62A and facing the outlet 8B of the housing 8 .

[0095] The baffle 62A has a single row of holes 62 ′ extending parallel to the reference axis Z, through which the treated exhaust gases coming from the outlet 8B are sucked into the extraction unit 6 .

[0096] Preferably, the baffle 62A extends parallel to the reference axis Z over a length approximately equal to the dimension of the outlet 8B along the reference axis Z.

[0097] In one or more preferred embodiments, such as the illustrated embodiment, the extraction hanger 62 and the outlet pipe 61C both have an inner lining 63 made of a high temperature resistant material (see FIG. Fig. 8A ), only the treated exhaust gas contacts the liner 63, which is used to protect the extraction hanger 62 and other parts of the container body 61B from the high temperature of the exhaust gas. Preferably, the liner is made of graphite. The liner 63 contained in the shell 62B has a corresponding row of holes 63' aligned with the row of holes 62' of the baffle 62A.

[0098] In one or more preferred embodiments, such as the illustrated embodiment (see Fig. 8A and 8C ), the cooling pipe 64 is realized as a cavity formed in the wall of the shell 62B and is arranged around the baffle 62A, extending along a trajectory contained in a plane parallel to the baffle 42A, and following the contour of the baffle 42A, in particular the contour of its two vertical segments and its upper horizontal segment.

[0099] In view of the above, it can be noted that this arrangement of the cooling pipe 64 makes it possible to concentrate the cooling effect of the cooling medium to the area of ​​the extraction unit 6 where the extraction unit 6 is exposed to the heating housing 8. In this way, the exhaust gas is immediately cooled upon entering the extraction unit 6, and the extraction unit 6 is effectively protected from the high temperature of the heating housing 8.

[0100] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 ), the device 10 also includes intermediate conduit sections 15, 16, which are respectively located between the inlet 8A of the housing 8 and the conveying hanger 42 and between the outlet 8B of the housing 8 and the extraction hanger 62, and respectively connect the conveying hanger 42 fluid to the inlet 8A and connect the extraction hanger 62 fluid to the outlet 8B.

[0101] In this way, the duct sections 15, 16 spatially separate the two hangers 42, 62 from the housing 8, thereby creating a corresponding transition region, whereby a temperature gradient is established in the air flow, and then the two hangers 42, 62 are subjected to the lower temperature air flow. The two sections 15, 16 are preferably made of high temperature resistant material, such as graphite.

[0102] In one or more preferred embodiments, such as the illustrated embodiment (see Figures 1 to 3 ), the device 10 includes a housing structure 14, which can be positioned relative to the base 12 along the reference axis Z in a first position ( Figure 1 shown) and the second position ( Figure 3 In the first position, the shell structure 14 and the base are connected together and the housing 8 is separated from the outside. In the second position, the shell structure 14 is separated from the base 12 and the housing 8 can be approached from the outside.

[0103] refer to Figure 1 , the device 10 includes a drive system for moving the housing structure 14 between the above-mentioned first and second positions.

[0104] The drive system may include conventional means suitable for effecting indicated movement of the housing structure 14 .

[0105] In the example shown, the device 10 includes two pairs of drive units 20, which are arranged on two opposite sides of the housing structure 14 and support the housing structure 14. Each drive unit 20 includes a pair of guide rails 22 parallel to the reference axis Z and a slider 24 to which the housing structure 14 is connected. In addition, each drive unit 20 includes a shaft 26 parallel to the reference axis Z, which is driven in rotation by a motor 27 and engages with an internal threaded hole of the slider 24, so that the rotation of the shaft 26 determines the corresponding movement of the slider along the reference axis Z.

[0106] In operation, the four drive units 20 are synchronously controlled so as to drive the housing structure 14 to move along the reference axis Z together.

[0107] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 2 and 3 ), the shell structure 14 comprises an inner shell 141 made of a heat insulating material. Preferably, the inner shell 141 is made of foam, and even more preferably made of graphite foam.

[0108] In one or more preferred embodiments, such as the illustrated embodiment, the inner housing 141 includes a side wall 141A extending about a reference axis Z and a cover 141B placed on top of the side wall 141A.

[0109] The side wall 141A comprises two opposite openings 141C, 141D extending parallel to the reference axis Z.

[0110] In the above-mentioned first position of the casing structure 14, the inner casing 141 is placed with its side wall 141A resting on the block 12D of the base 12 and receiving inside the outer casing 8 and the intermediate ducts 15, 16. At the same time, according to the shape coupling, the openings 141C, 141D receive respectively the column 11 with the associated hanger 42 and the column 13 with the associated hanger 62, so that each opening finds itself closed with respect to the outside by the corresponding column and hanger.

[0111] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 ), the shell structure 14 further includes an outer shell 142, which surrounds the inner shell 141 and carries the inner shell 141. Preferably, the outer shell is made of steel.

[0112] The outer shell 142 includes a closed side wall 142A extending around the reference axis Z and a cover 142B placed on top of the closed side wall 142. The side wall 142A surrounds the side wall 141A of the inner shell 141 maintaining a certain distance, thereby forming an empty space between the two shells.

[0113] In the above-mentioned first position of the shell structure 14, the outer shell 142 is placed with its side wall 142A resting on the plate 12A of the base 12, and receives the parts of the columns 11, 13 and the hangers 42, 62 extending from the inner shell 141 in its internal space surrounding the inner shell 141.

[0114] The outer shell 142 is configured to seal the inner space it defines together with the base 12 with respect to the outside. As will be described below, in operation, the outer shell 142 is actually intended to contain an inert gas controlled atmosphere filling the interior of the inner shell 141 and the inner space between the outer shell 142 and the inner shell 141.

[0115] In one or more preferred embodiments, such as the illustrated embodiment, the heater 3 of the heating system is mounted on the cover 142B of the outer shell 142 so as to move together with the shell structure 14 when the shell structure 14 moves from the first position to the second position, and vice versa.

[0116] In particular, the heater 3 is suspended on the cover 142B and extends to the interior of the inner shell 141, extending parallel to the reference axis Z and passing through the hole 141D made on the cover 141B of the inner shell 141; the heaters 3 are arranged relative to each other according to the above-mentioned two series 3A, 3B so that when the shell structure 14 is in its first position, they find themselves in the above-mentioned relative position relative to the relative wall 81 of the outer shell 8.

[0117] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 3), a temperature probe 5 is also installed on the cover 142B of the outer shell 142, and the temperature probe 5 extends into the interior of the inner shell 141 through a corresponding hole 141E made on its cover 141B.

[0118] Reference now Fig. 9 As described above, the delivery unit 4 is fluidically connected to the supply unit 7 via its inlet 41C for supplying the process gas to the delivery unit 4 .

[0119] Preferably, the supply unit 7 is configured to supply a predetermined flow of the process gas to the delivery unit 4 ; for example, the supply unit 7 may include a flow sensor, based on which the supply unit 7 adjusts the flow of the process gas it supplies to the delivery unit 4 .

[0120] On the other hand, the extraction unit 6 is fluidly connected to a pump 70 via its outlet duct 61C via the insertion of a pressure control valve 72 (e.g. a throttle valve). The pump 70, in turn, is fluidly connected to a system for disposing of the treated exhaust gases. The pump 70 and the pressure control valve 72 together form a negative pressure or vacuum generator, which is suitable for determining a predetermined minimum pressure in the device during operation. For example, the minimum pressure can be in the range of 10 to 600 mbar.

[0121] In one or more preferred embodiments, the apparatus 10 further includes means for generating a controlled atmosphere 80 within the housing structure 14 .

[0122] In particular, in one or more preferred embodiments, such as the illustrated embodiment (see Figure 3 ), the plate 12A includes at least an inlet 74 that is fluidly connected to the interior of the outer shell 142, and more specifically, is fluidly connected to the interior space included between the outer shell 142 and the inner shell 141.

[0123] The inlet 74 is connected to a supply unit 78, which supplies the inert gas to the interior of the housing structure 14 through the inlet 74 to form and maintain a controlled atmosphere 80 of the inert gas inside the housing structure 14. The supply unit 78 may include a pressurized tank containing the inert gas, the pressurized tank being associated with a flow control valve for controlling the flow of the inert gas supplied by the pressurized tank.

[0124] The inert gas may be a rare gas, such as helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe). Preferably, the rare gas may be argon, since argon is relatively abundant in the atmosphere. Alternatively, the inert gas may be nitrogen. The inert gas may be provided in a pressurized tank of the supply unit 78.

[0125] Furthermore, the plate 12A comprises at least an outlet 76 for extracting the inert gas of the controlled atmosphere out of the housing structure 14 , which outlet is in fluid communication with the interior of the housing structure 14 , more specifically with the internal space comprised between the outer housing 142 and the inner housing 141 .

[0126] In one or more preferred embodiments, such as the illustrated embodiment, the outlet 76 is fluidly connected to the outlet duct 61C of the extraction unit 6 , in particular via a pipe joint 61F provided on the same outlet duct 61C.

[0127] In one or more preferred embodiments, such as the illustrated embodiment, the outlet 76 is positioned relative to the inner housing 141 relative to the inlet 74; for example, Figure 3 and 9 As shown, the inlet 74 may be located near the delivery unit 4 , while the outlet 76 may be located near the extraction unit 6 .

[0128] The inert gas flowing into the housing structure 14 via the inlet 74 fills the inner space between the outer housing 142 and the inner housing 141 , as well as the space around the housing 8 inside the inner housing 141 , which is not hermetically closed.

[0129] This means that, in operation, the interior spaces of both housings 141 and 142 contain a controlled atmosphere 80 and are at the same pressure.

[0130] In view of the above, it can now be noted that the pump 70 operates in conjunction with the throttle valve 72 to establish a predetermined minimum pressure downstream of the extraction unit 6, and also establishes essentially the same pressure for the controlled atmosphere within the shell structure 14, since there is fluid communication between the latter region and the downstream region of the extraction unit 6.

[0131] Conversely, along the flow path through the delivery unit 4, the housing 8 and the extraction unit 6, the process gas maintains a higher pressure, since the pressure difference tends to determine the flow of the process gas along the same path and upward to the above-mentioned area downstream of the extraction unit 6.

[0132] This means that eventual gas leakage can only occur from the flow path of process gas to the controlled atmosphere 80, but not vice versa.

[0133] Gas leaking into the controlled atmosphere 80 is subsequently removed through the outlet 76 along with the inert gas.

[0134] In this regard, it is important to note that the high temperatures and wide temperature ranges to which the outer shell 8 and the inner shell 141 are subjected would make it technically very difficult to provide these two structures with a leak-proof gas-tight closure. In the solution described here, this problem is eliminated in any case by the controlled atmosphere 80 generated inside the shell structure 14, which serves to suppress any possible gas leakage and remove it via the outlet 76.

[0135] In contrast, the outer housing 142, which must contain the controlled atmosphere 80, is exposed to lower temperatures than the outer housing 8 and the inner housing 141, which can then easily provide a hermetic closure.

[0136] In addition to solving the problem of gas leakage, the controlled atmosphere 80 also has the function of protecting equipment components from premature failure.

[0137] Obviously, as long as the principle of the invention is maintained, the construction details and forms of the embodiments may vary, even to a great extent, from what is described here purely by way of non-limiting example, without thereby departing from the scope of the invention as defined in the appended claims. For example, the device 10 according to the preferred embodiment shown in the figures may be mounted according to different orientations, such that both the reference axis Y and the reference axis Z are horizontal, or such that the reference axis Y is vertical and the reference axis Z is horizontal.

Claims

1. An apparatus (10) for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied to the substrate by a chemical vapor deposition (CVD) process, include: - a process chamber (2) in which a substrate (101, 101') is arranged along a first reference axis (Z), wherein the substrate (101) is located in parallel planes substantially orthogonal to the first reference axis (Z); - a heating system for heating the process chamber (2) to a predetermined internal temperature; - a delivery unit (4) for delivering process gas to the process chamber (2); - an exhaust gas extraction unit (6) for extracting process exhaust gases from the process chamber (2); The device comprises a housing (8) which surrounds a process chamber (2) and has an inlet (8A) for receiving process gas ejected by a delivery unit (4) and an outlet (8B) for directing process waste gas to a waste gas extraction unit (6), and the device (10) is configured to establish a pressure difference between the inlet (8A) and the outlet (8B), generating a gas flow from the inlet (8A) to the outlet (8B) through the housing (8) and through a substrate (101') arranged in the process chamber (2), - a housing structure (14) configured to surround the housing (8) and isolate it from the outside, - an inlet (74) and an outlet (76) in fluid communication with the interior of the housing structure (14), and A supply unit (78) for supplying the inert gas to the interior of the housing structure (14) via the inlet (74) and for generating a controlled atmosphere (80) of the inert gas within the housing structure (14).

2. The device according to claim 1, in, The housing (8) comprises: - an inlet section (8C) comprising said inlet (8A), - a central section (8D) surrounding said process chamber (2), and - an outlet section (8E) comprising said outlet (8B).

3. The device according to claim 2, in, The housing (8) has an increased cross-sectional flow area in the central section (8D) relative to the inlet and outlet sections (8C, 8E) so that the air flow velocity in the central section (8D) is lower than the air flow velocity in the inlet and outlet sections (8C, 8E).

4. The device according to claim 2 or 3, in, The housing (8) has a cross-sectional flow area whose dimensions along a first reference axis (Z) are uniform and constant throughout the inlet, center and outlet sections (8C, 8D, 8E).

5. The device according to any one of the preceding claims, in, The inlet section (8C) comprises a series of linear fins (8F) extending along a first reference axis (Z), the fins facing the inlet (8A) and being equally spaced along the first reference axis (Z) so as to evenly distribute the airflow entering the housing inlet (8A) to a plurality of positions corresponding to the positions of the substrate (101) in the linear structure (101').

6. The device according to any one of the preceding claims, in, The housing (8) comprises a pair of opposing walls (81) and a pair of end caps (82), the pair of opposing walls both extending substantially along the second reference axis (Y), the pair of end caps being mounted to edges of the pair of walls (81) that are opposite to each other along the first reference axis (Z).

7. The device according to claim 6, in, With reference to the second reference axis (Y): Each of the pair of opposing walls (81) has an upstream end flat portion (81C), a downstream end flat portion (81E), and a central concave cylindrical portion (81D) having a convex side facing the outside of the housing (8); and Each of the pair of end covers (82) has an upstream end flat portion (82C), a downstream end flat portion (82E) and a central flat portion (82D); The pair of walls (81) and the pair of end covers (82) are assembled together so that: The upstream end flat portions (81C) of the pair of opposite walls (81) and the upstream end flat portions (82C) of the pair of end covers (82) together form an inlet section (8C) of the housing (8) including the inlet (8A); The central portion (81D) of the pair of opposing walls (81) and the central portion (82D) of the pair of end covers (82) together form a central section (8D) of the housing (8) surrounding the processing chamber (2); and The downstream end flat portions (81E) of the pair of opposing walls (81) and the downstream end flat portions (82E) of the pair of end covers (82) together form an outlet section (8E) of the housing (8) including the outlet (8B).

8. The device according to any one of the preceding claims, in, The housing (8) is made of a heat-conducting material, preferably graphite or silicon carbide, and the heating system is arranged to heat the housing.

9. The device according to claim 8, in, The heating system comprises a heater (3) which generates thermal radiation to heat the housing (8).

10. The device according to claim 9, in, The heating system comprises two series (3A, 3B) of thermal radiation heaters (3), which are arranged outside the housing (8) to face and extend along a pair of opposite walls (81) of the housing (8), and the pair of opposite walls (81) generally extend along a second reference axis (Y).

11. The device according to claim 10, in, Each series (3A, 3B) of heaters (3) follows a line (M) matching the contour of the corresponding housing wall (81) along the second reference axis (Y).

12. The device according to claim 10 or 11, in, The heating system is configured to heat the inlet section (8C) of the housing (8) to a higher temperature than the center and outlet sections (8D, 8E) of the housing (8).

13. The device according to any one of the preceding claims, in, The delivery unit (4) comprises a baffle (42A) having a plurality of holes through which the process gas is ejected, the baffle (42A) being arranged parallel to the inlet (8A) of the housing and orthogonal to the second reference axis (Y).

14. The device according to any one of the preceding claims, in, The exhaust gas extraction unit (6) comprises a baffle (62A) having a plurality of holes through which the exhaust gas is discharged, the baffle (62A) being arranged parallel to the outlet (8B) of the housing (8) and orthogonal to the second reference axis (Y).

15. Apparatus according to any one of the preceding claims, in, The conveying unit (4) comprises a cooling pipe for cooling the conveyed process gas, and / or wherein: The exhaust gas extraction unit (6) comprises a cooling pipe for cooling the extracted treated exhaust gas.

16. Apparatus according to any one of the preceding claims, include: an intermediate conduit (15) which fluidically connects the delivery unit (4) to the inlet (8A) of the housing (8) while spatially separating the delivery unit from the inlet, and / or - an intermediate duct (16) which fluidically connects the exhaust gas extraction unit (6) to the outlet (8B) of the housing (8) while spatially separating the exhaust gas extraction unit from the outlet.

17. Apparatus according to any one of the preceding claims, in, The first reference axis (Z) is vertical and the second reference axis (Y) is horizontal.

18. Apparatus according to any one of the preceding claims, in, The apparatus also includes a negative pressure generator (70, 72) fluidly connected to the exhaust extraction unit (6) and the outlet (76) and configured to determine, in operation, a predetermined minimum pressure in the controlled atmosphere (80) within the housing structure (14) that is lower than the pressure of the gas flow through the housing (8).

19. The device according to claim 18, comprising a base (12) supporting the housing (8), the delivery unit (4) and the exhaust gas extraction unit (6); in, The shell structure (14) can be moved relative to the base (2) along a first reference axis (Z) between a first position and a second position. In the first position, the shell structure (14) and the base (12) are connected together and separate the outer shell (8) from the outside. In the second position, the shell structure (14) is separated from the base (12) and the outer shell (8) can be approached from the outside.

20. A method for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied to the substrate by a chemical vapor deposition (CVD) process, include: - arranging the substrates (101) in a linear configuration (101') along a first reference axis (Z) of the process chamber (2) and according to an orientation of the substrates (101) in parallel planes orthogonal to the first reference axis (Z); - heating the process chamber (2) to a predetermined internal temperature by means of a heating system; - delivering the process gas to the process chamber (2) via a delivery unit (4), wherein, in the process chamber (2), the process gas undergoes a CVD process to form a film on each substrate (101) of the linear structure (101'), and generates process exhaust gas; - extracting the process waste gas generated in the process chamber (2) through the waste gas extraction unit (6); The method includes providing a shell (8) surrounding a process chamber (2) and having an inlet (2A) for receiving a process gas ejected by a delivery unit (4) and an outlet (2B) for directing the process exhaust gas to an exhaust gas extraction unit (6), and generating a gas flow from the inlet (2A) to the outlet (2B) through the shell (8) and surrounding all substrates (101) arranged in the linear structure (101') by moving along a second reference axis (Y) transverse to a first reference axis (Z) and passing through a linear structure (101') of substrates arranged in the process chamber (2).

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