Testing system for measuring ferromagnetic material force-magnetic-thermal coupling model

Abstract

The invention discloses a test system for measuring a ferromagnetic material force-magnetic-thermal coupling model. The test system comprises a main control unit, a test device, a sensor unit and an upper computer, the testing device is used for performing an impact test on the normal-temperature test piece and the time after the temperature is controlled; the sensor unit is used for measuring stress, temperature and speed non-electric quantity signals; the main control unit is used for controlling the controllable high-pressure gas cylinder and the temperature controller in the testing device, conditioning, collecting and storing signals measured by the sensor unit, and then sending the signals to the upper computer for analysis and calculation. The test system is constructed based on the influence of force and temperature on the magnetic characteristics of the material, the test system realizes quantitative measurement of material magnetic field change caused by force and temperature in a low-cost test mode, and the system is simple to operate and has good practical value and wide application prospect.

Description

Technical Field

[0001] The invention belongs to the field of ferromagnetic material coupling behavior testing, and in particular relates to a testing system for measuring a force-magnetism-heat coupling model of ferromagnetic materials. Background Art

[0002] At present, in the field of coupled behavior testing, various coupled behavior testing methods have emerged according to different application fields of materials, material differences and special working environments. As ferromagnetic materials are widely used in artillery recoil mechanisms, their performance directly affects the reliability and stability of artillery operations. Their force-magnetic-thermal coupled behavior not only affects the artillery recoil performance, but is also an urgent problem to be solved in predicting its fatigue life.

[0003] Chinese Patent 202311663931.5 discloses the research on force-magnetic multi-field coupling loading and force-magnetic multi-thermal testing device for solid refrigeration technology. It uses a magnetic field loading component to provide the magnetic field strength required for the sample, and a stress field loading component to provide the tensile stress required during loading. The sensor assembly is used to control the working states of the magnetic field loading component and the stress field loading component respectively, and the infrared thermal imaging temperature acquisition component is used to collect the temperature change information of the sample. The device measures the temperature change of the sample under different magnetic fields and stresses through external magnetic fields and stresses, but cannot measure the magnetic field change of the material itself under force-magnetic-thermal coupling.

[0004] Chinese patent 201811123489.6 discloses a dynamic response test platform for magnetostrictive materials under a force-magnetic-thermal multi-field coupling environment. It uses a pressure head to apply a force field to the test specimen, an optical heating device to apply a thermal field to the specimen, two permanent magnets to apply a magnetic field, and finally a laser displacement sensor to measure the deformation of the specimen. The device studies the deformation of the material under force-magnetic-thermal coupling by applying an external magnetic field, stress and temperature, and cannot be used to study the magnetic field changes of the material itself under force-magnetic-thermal coupling. Summary of the invention

[0005] The purpose of the present invention is to provide a test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials, by applying impact force and temperature, and then measuring the magnetic field change of the material, and building the force-magnetic-thermal model of the ferromagnetic material through the magnetic field under different impact forces and temperatures, so as to solve the problem that when the ferromagnetic material is used in mechanical devices such as artillery recoil machines, its own force-magnetic-thermal coupling behavior affects the performance of the device. This method can not only measure the force-magnetic-thermal coupling of ferromagnetic materials, but also measure force-magnetic coupling and thermal-magnetic coupling separately, and the test system is low-cost and simple to operate.

[0006] The technical solution for achieving the novel purpose of the present invention is: a test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials, characterized in that it includes a main control unit, a test device, a sensor unit and a host computer; the test device is used to realize impact testing of normal temperature test pieces and the time after temperature control; the sensor unit is used to measure stress, temperature, speed non-electrical signals; the main control unit is used to control the controllable high-pressure gas cylinder and temperature controller in the test device, and to condition, collect and store the signals measured by the sensor unit, and then send the signals to the host computer for analysis and calculation.

[0007] The test device includes a controllable high-pressure gas cylinder, an impact rod, an impact table, a temperature controller and a test platform; the test platform is fixed on the ground, the controllable high-pressure gas cylinder is fixed on the test platform and connected to the impact rod, the impact rod and the impact table are coaxially arranged, and the end face of the impact rod is ensured to be parallel to the end face of the impact table; a gasket is placed between the impact rod and the sample; the sample is arranged between the gasket and the impact table and the sample is placed in the coil; the temperature controller is used to heat the sample.

[0008] The sensor unit includes a full-bridge strain gauge, a thin film temperature sensor, a speed sensor and a coil; the speed sensor is fixedly installed at the front end of the impact rod, and the coil is fixed on the end surface of the impact platform; one end of the specimen is attached to the full-bridge strain gauge, and the other end is attached to the thin film temperature sensor; the speed sensor is used to measure the speed at which the impact rod hits the specimen, the full-bridge strain gauge is used to measure the stress on the specimen, the thin film temperature sensor is used to measure the temperature of the specimen, and the coil is used to measure the induced electromotive force.

[0009] The main control unit includes an STM32 main control module, a signal conditioning module, a DAC control module, an ADC acquisition module, a FLASH storage module and a serial communication module; the output ends of the coil, the speed sensor, the thin film temperature sensor and the full-bridge strain gauge are connected to the signal conditioning module, the signal conditioning module is connected to the signal acquisition module, and the signal acquisition module is connected to the STM32 main control module; the STM32 main control module is connected to the FLASH storage module, the serial communication module and the DAC control module; the DAC control module is connected to the temperature controller and the controllable high-pressure gas cylinder; and the serial communication module is connected to the host computer.

[0010] First, an impact demagnetization experiment is carried out at ambient temperature. The object to be tested with the strain gauge attached is placed in the coil winding not far in front of the impact rod through a non-magnetic steel gasket. The changing magnetic field will be converted into current in real time. The voltage signal generated by the signal conditioning module is collected by the signal acquisition module. At the same time, the speed signal under the corresponding load will be collected by the speed sensor. Then a temperature demagnetization experiment of the material is carried out. The object to be tested with the full-bridge strain gauge and temperature sensor attached is placed in the temperature controller for heating. The signals of the full-bridge strain gauge and temperature sensor are conditioned by the conditioning module and collected in real time by the signal acquisition module. After the material is heated to the specified temperature, it is taken out and placed in the coil to measure the magnetic field change and temperature. Then the power is loaded to measure the magnetic field change under different temperatures and different impact loads.

[0011] A test method for a test system for measuring a force-magnetic-thermal coupling model of a ferromagnetic material, characterized in that the steps are as follows:

[0012] Step 1: Build a test device for the force-magnetic-thermal coupling model of ferromagnetic materials;

[0013] Step 2, debugging the test device of the ferromagnetic material force-magnetic-thermal coupling model;

[0014] Step 3: The main control unit controls the controllable high-pressure gas cylinder to load power to act on the non-edge impact rod, and the impact rod passes through the speed sensor and hits the ferromagnetic material attached to the strain gauge in the front coil winding;

[0015] Step 4: Place the ferromagnetic material attached to the full-bridge strain gauge and the temperature sensor into a temperature controller with a set temperature for heating, and collect the thermal stress and temperature in real time;

[0016] Step 5: Place the heated ferromagnetic material attached to the full-bridge strain gauge and the temperature sensor into the coil;

[0017] Step 6: Load power and measure temperature, stress, velocity and magnetic field changes simultaneously.

[0018] Step 7: The main control unit collects and stores the signal of the sensor unit and sends it to the host computer for display through the serial port.

[0019] Compared with the prior art, the present invention has the following significant advantages:

[0020] (1) The present invention utilizes the internal magnetic circuit of the ferromagnetic material and its own structural dimensions, and the magnetic induction response is reflected as magnetic flux in the coil and converted into induced electromotive force according to Faraday's law of electromagnetic induction.

[0021] (2) The present invention uses a simple test device to achieve quantitative measurement of material magnetic field changes caused by force and temperature, and the operation is simple.

[0022] (3) The present invention places the specimen in a temperature controller for heating, overcoming the unevenness of the heating method of the traditional device. At the same time, temperature sensors and strain gauges are attached to both sides of the specimen and placed in a temperature controller for heating, solving the problem of ignoring the thermal stress of the material itself when measuring the traditional force-magnetic-thermal coupling behavior;

[0023] (4) The present invention can test the material force-magnetic-thermal coupling model, and can also test the material force-magnetic coupling and magnetic-thermal coupling models separately;

[0024] (5) The test system of the present invention is a multi-channel high-precision high-speed storage test system. Compared with the same type of test systems, the chips and components used in the present invention are less expensive, and the number of channels of the present invention is greater, and the signal acquisition speed can reach more than 20MSPS. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The present invention is a schematic diagram of the system composition of a test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials.

[0026] Figure 2 The present invention is a schematic diagram of the installation of a test device for measuring a force-magnetic-thermal coupling model test system of ferromagnetic materials.

[0027] Figure 3 The present invention is a schematic diagram of an impact demagnetization test principle of a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials.

[0028] Figure 4 The present invention is a temperature demagnetization test principle diagram of a test system for measuring the force-magnetism-heat coupling model of ferromagnetic materials.

[0029] Figure 5 The present invention is a circuit diagram of a main control module of a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials.

[0030] Figure 6 The present invention is a circuit diagram of a signal conditioning module for measuring a force-magnetic-thermal coupling model test system of ferromagnetic materials.

[0031] Figure 7 This is a circuit diagram of the main chip of an ADC acquisition module of a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials according to the present invention.

[0032] Figure 8 The present invention is a circuit diagram of an ADC acquisition module acquisition channel of a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials.

[0033] Fig. 9 The present invention is a circuit diagram of a FLASH storage module of a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials. DETAILED DESCRIPTION

[0034] The present invention is further described in detail below in conjunction with the accompanying drawings.

[0035] Combination Figure 1 A test system for measuring the force-magnetic-thermal coupling behavior of ferromagnetic materials comprises a test device (one), a sensor unit (two), a main control unit (three) and a host computer (16). The main control unit (three) is used to control the controllable high-pressure gas cylinder 1 and the temperature controller 13 in the test device (one), and to condition, collect and store the signal measured by the sensor unit (two), and then send the signal to the host computer 16 for calculation through a serial communication module 15.

[0036] The test device includes a controllable high-pressure gas cylinder 1, an impact rod 2, an impact table 8, a temperature controller 13 and a test platform 18; Figure 2 , the test platform 18 is fixed on the ground. The controllable high-pressure gas cylinder 1 is fixed on the test platform and connected to the impact rod 2. The impact rod 2 is coaxially arranged with the impact table 8, and the end face of the impact rod 2 is parallel to the end face of the impact table 8. The gasket 3 is placed between the impact rod and the sample; the sample is set between the gasket 3 and the impact table 8 and the sample is placed in the coil; the temperature controller 13 is used to heat the sample.

[0037] The sensor unit includes a full-bridge strain gauge 7, a thin film temperature sensor 6, a speed sensor 17 and a coil 4;

[0038] The velocity sensor 17 is fixedly mounted on the front end of the impact rod 2, and the coil 4 is fixed to the end face of the impact platform 8 using strong glue. The gasket 3 is placed between the impact rod 2 and the sample 5; the sample 5 is set between the gasket 3 and the impact platform 8. One end of the sample 5 is attached to the full-bridge strain gauge 7, and the other end is attached to the thin film temperature sensor 6, which is placed in the coil 4. The sensor unit is used to measure non-electrical quantities such as stress, temperature, and speed. The velocity sensor 17 is used to measure the speed at which the impact rod 2 hits the sample, the full-bridge strain gauge 7 is used to measure the stress on the sample 5, the thin film temperature sensor 6 is used to measure the temperature of the sample, and the coil 4 is used to measure the induced electromotive force.

[0039] The main control unit includes an STM32 main control module 11 , a signal conditioning module 9 , a DAC control module 12 , an ADC acquisition module 10 , a FLASH storage module 14 and a serial communication module 15 .

[0040] The output ends of the coil 4, the speed sensor 17, the thin film temperature sensor 6 and the full-bridge strain gauge 7 are connected to the signal conditioning module 9, the signal conditioning module 9 is connected to the signal acquisition module 10, and the signal acquisition module 10 is connected to the STM32 main control module 11. The STM32 main control module 11 is connected to the FLASH storage module 14, the serial communication module 15 and the DAC control module 12. The DAC control module 12 is connected to the temperature controller 13 and the controllable high-pressure gas cylinder 1. The serial communication module 15 is connected to the host computer 16. After the signal is conditioned by the signal conditioning module 9, it is input to the ADC acquisition module 10. The data collected by the ADC acquisition module 10 stores the test data in the FLASH storage module 14 under the control of the STM32 main control module 11. The serial communication module 15 is used to transmit the data stored in the FLASH storage module 14 to the host computer 16 under the control of the STM32 main control module 11.

[0041] Further, specifically, the output end of the DAC control module 12 of the main control unit is connected to the controllable high-pressure gas cylinder 1 and the temperature controller 13 in the test device; the test device is connected to the sensor unit; the output end of the sensor unit is connected to the input end of the signal conditioning module 9 of the main control unit; the output end of the signal conditioning module 9 is connected to the input end of the ADC acquisition module 10; the output end of the ADC acquisition module 10 is connected to the STM32 main control module 11; the FLASH storage module 14 and the serial port communication module 15 are connected to the STM32 main control module 11; the serial port communication module 15 is connected to the host computer 16.

[0042] Combination Figure 3 , the impact rod 2 transfers the impact load to the sample 5 under the high-pressure gas cylinder. After the impact, the sample 5 (material) makes a mechanical response according to the material constitutive structure. The mechanical response σ tr Binding force magnetic coupling is transformed into magnetic induction response B tr Under the influence of the internal magnetic circuit of the material and its own structural dimensions, the magnetic induction response B tr In the coil, it is reflected as magnetic flux Φ g And according to Faraday's law of electromagnetic induction, it is converted to E g , and finally after the conditioning circuit is shown as E out Output. The whole process is completed in the mechanical circuit, magnetic circuit and electrical circuit respectively.

[0043] Combination Figure 4 The temperature controller heats the sample, and the material responds thermally according to its constitutive structure during the heating process. The thermal response T tr Combined with the thermomagnetic coupling, the magnetic induction response B tr , under the influence of the internal magnetic circuit of the material and its own structural dimensions, the magnetic induction response B tr In the coil, it is reflected as magnetic flux Φ gAnd according to Faraday's law of electromagnetic induction, it is converted to E g , and finally after the conditioning circuit is shown as E out Output. The whole process is completed in the thermal circuit, magnetic circuit and electrical circuit respectively.

[0044] Among them, the calculation formula of the magnetic flux of the coil is:

[0045]

[0046] Where Φ is the magnetic flux of the coil, E out is the induced electromotive force in the coil.

[0047] Combination Figure 5 The STM32 main control module 11 includes an STM32F407VET6 chip, a resistor R1, a resistor R2, a resistor R3, a resistor R49, a resistor R59, a resistor R60, a resistor R61, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, a capacitor C7, a crystal oscillator Y1 and a switch RST1; the resistor R3 and the resistor R49 are respectively connected to the 94th and 37th pins of the STM32F407VET6 chip, and the other end is grounded ; One end of the switch RST1, resistor R2 and capacitor C5 is connected to the 14th pin of the STM32F407VET6 chip, the other end of the switch RST1 and capacitor C5 is connected to the ground, and the other end of the resistor R2 is connected to 3.3V; one end of the resistor R60 is connected to the 21st pin of the STM32F407VET6 chip, and the other end is connected to the 19th pin of the STM32F407VET6 chip. The 19th and 21st pins of the STM32F407VET6 chip are connected to VDDA; capacitor C6 and capacitor C7 are connected in parallel, one end of the two is connected to the 19th pin of the STM32F407VET6 chip, and the other end is connected to the 20th pin of the STM32F407VET6 chip; one end of the resistor R59 is connected to the 19th pin of the STM32F407VET6 chip, and the other end is connected to 3.3V; one end of the resistor R61 is connected to the 20th pin of the STM32F407VET6 chip, and the other end is grounded; one end of the capacitor C1 and the capacitor C2 are connected to the ST Pin 49 and pin 73 of the M32F407VET6 chip are connected, and the other end is grounded; one end of the crystal oscillator Y1 and the resistor R1 are connected to pin 12 of the STM32F407VET6 chip, and the other end is connected to pin 13 of the STM32F407VET6 chip; one end of the capacitor C3 is grounded, and the other end is connected to pin 12 of the STM32F407VET6 chip; one end of the capacitor C4 is grounded, and the other end is connected to pin 13 of the STM32F407VET6 chip.

[0048] In this embodiment, combined with Figure 6The signal conditioning module 9 includes a CA3140 chip, a resistor R4, a resistor R5, a resistor R7, a resistor R8, a potentiometer R9, a capacitor C12, a capacitor C13, a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, and a connector P1; one end of the resistor R8 is connected to pin 3 of the CA3140 chip, and the other end is grounded; one end of the resistor R7 is connected to pin 6 of the CA3140 chip, the other end of the resistor R7 is connected to a section of the capacitor C18, the other end of the capacitor C18 is connected to one end of the resistor R4, the other end of the resistor R4 is connected to pin 2 of the connector P1, and pin 1 of the connector P1 is grounded; both ends of the potentiometer R9 are respectively connected to pins 1 and 5 of the CA3140 chip, and the variable resistance end and both ends of the potentiometer R9 are respectively connected to the 4 pins are connected; the positive electrode of capacitor C16 is connected to pin 4 of CA3140 chip, and the negative electrode is grounded; one end of capacitor C17 is connected to pin 4 of CA3140 chip, and the other end is grounded; the positive electrode of capacitor C13 is connected to pin 4 of CA3140 chip connected to 15V, and the negative electrode is grounded; one end of capacitor C17 is connected to pin 4 of CA3140 chip, and the other end is grounded; one end of capacitor C14 is connected to the connection point of capacitor C18 and resistor R4, and the other end is connected to one end of resistor R5 and capacitor C15, and the other end of resistor R5 and capacitor C15 are connected to pin 2 of CA3140 chip; one end of resistor R7 leads to signal output terminal Signal_OUT (not connected to the chip end), and pin 2 of the connector leads to signal input terminal Signal_IN.

[0049] In this embodiment, combined with Figure 7, the ADC acquisition module 10 includes an AD9238 chip module, channel A and channel B circuits. The components of channel A and channel B circuits are the same, so only the acquisition circuit A is described. The AD9238 chip module includes an AD9238 chip, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R34, a resistor R35, a resistor R36, a resistor R37, a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C35, a capacitor C37, a capacitor C38, a capacitor C39, a capacitor C40, a capacitor C41, a capacitor C42, and a capacitor C44; one end of the capacitor C8 and the capacitor C35 are respectively connected to the 6th and 7th pins of the AD9238 chip, and the other end is grounded; the two ends of the capacitors C9, C10, and C11 are respectively connected to the 6th and 7th pins of the AD9238 chip; the capacitors C37 and C38 One end of is connected to pin 8 of AD9238 chip, and the other end is grounded; one end of capacitor C39 and capacitor C44 are respectively connected to pin 10 and pin 11 of AD9238 chip, and the other end is grounded; both ends of capacitor C9, capacitor C10 and capacitor C11 are respectively connected to pin 10 and pin 11 of AD9238 chip; one end of resistor R19, resistor R21, resistor R22, resistor R35, resistor R36 and resistor R37 are respectively connected to pin 62, pin 60, pin 59, pin 20, pin 21 and pin 22 of AD9238 chip, and the other end is grounded; resistor R20 and resistor R34 are respectively connected to pin 19 and pin 61 of AD9238 chip, and the other end is connected to D3V3.

[0050] In this embodiment, combined with Figure 8, the channel A circuit includes an AD8138 driving operational amplifier, an AD8065 voltage feedback amplifier, a resistor R13, a resistor R15, a resistor R11, a resistor R16, a resistor R10, a resistor R23, a resistor R12, a resistor R14, a capacitor C19, a capacitor C31, a capacitor C20, a capacitor C32, a capacitor C30 and a connector P2; the connector pin 1 is connected to one end of the resistor R13, and the other end of the resistor R13 is connected to the pin 3 of the AD8065; one end of the resistor R15 is connected to the pin 3 of the AD8065, and the other end is grounded; the pin 4 of the AD8065 is connected to the pin 1; the pin 2 of the AD8065 is connected to one end of the capacitor 31, and the other end of the capacitor C31 is grounded; the two ends of the resistor R11 are respectively connected to the pin 1 of the AD8065 and the pin A Pin 1 of D8138 is connected; both ends of resistor R10 are connected to pin 1 and pin 4 of AD8138 respectively; both ends of resistor R23 are connected to pin 8 and pin 5 of AD8138 respectively; one end of resistor R16 is connected to pin 8 of AD8138, and the other end is grounded; one end of capacitor C32 is connected to pin 6 of AD8138, and the other end is grounded; one end of capacitor C20 is connected to pin 3 of AD8138, and the other end is grounded; one end of resistor R12 and resistor R14 are connected to pin 4 and pin 5 of AD8138 respectively, and the other ends of resistor 12 and resistor 14 are connected to both ends of capacitor C30 respectively; the end of resistor R12 not connected to AD8138 is connected to VIN_A-, and the end of resistor R14 not connected to AD8138 is connected to VIN_A+.

[0051] In this embodiment, combined with Fig. 9 , the FLASH storage module 4 includes a MT29F32G08 chip, a resistor R45, a resistor R46, a resistor R47, a resistor R48, a capacitor C67 and a capacitor C68; one end of the resistor R46 is connected to pin 9 of the MT29F32G08 chip, and the other end is connected to 3.3V; one end of the resistor R47 is connected to pin 10 of the MT29F32G08 chip, and the other end is connected to 3.3V; one end of the resistor R48 is connected to pin 19 of the MT29F32G08 chip, and the other end is connected to 3.3V; pin 12 of the MT29F32G08 chip is connected to pin 37, and pin 13 is connected to pin 36; both ends of the capacitor C67 and the capacitor C68 are connected to pin 36 and pin 37 of the MT29F32G08 chip respectively; pin 36 of the MT29F32G08 chip is grounded, and pin 37 is connected to 3.3V.

[0052] In this embodiment, the serial port communication module 15 specifically adopts a communication module based on a CH340 chip.

[0053] Further, pin 23, pin 24, pin 25, pin 26, pin 29, pin 30, pin 31, pin 32, pin 67, pin 68, pin 69, pin 3, pin 95, pin 35, pin 36, pin 1, pin 2, pin 91, pin 92, pin 93, pin 98, pin 38, pin 5, pin 4, pin 97, pin 96, pin 89 of the main control chip STM32F407VET6 in the STM32 main control module 11 are respectively connected to pin 44, pin 45, pin 46, pin 47, pin 48, pin 49, pin 50, pin 51, pin 54, pin 55, pin 56, pin 57, pin 58, pin 25, pin 26, pin 27, pin 30, pin 31, pin 32, pin 33, pin 34, pin 35, pin 36, pin 37, pin 38, pin 39, pin 63 of the ADC acquisition module;

[0054] Pins 39, 40, 41, 42, 43, 44, 45, 46, 87, 85, 54, 53, 58, 59 and 86 of the main control chip STM32F407VET6 in the STM32 main control module 11 are respectively connected to pins 29, 30, 31, 32, 41, 42, 43, 44, 7, 8, 9, 10, 16, 17 and 18 of the FLASH storage module.

[0055] The 78th, 79th and 74th pins of the STM32 main control module 11 are respectively connected to the TXD, RXD and GND pins of the serial communication module; the Signal_OUT end of the signal conditioning module is connected to the 1st pin of the P2 connector.

[0056] A test method for a test system for measuring a force-magnetic-thermal coupling model of ferromagnetic materials is as follows: The test steps are as follows:

[0057] Step 1: Build a test device for the force-magnetic-thermal coupling model of ferromagnetic materials;

[0058] Step 1-1, align the impact rod, coil, specimen installation position and impact table coaxially;

[0059] Step 1-2: In order to prevent the movement of the coil and the permanent magnet during the experiment from causing errors in the experimental results, it is necessary to use strong glue to fix the coil system;

[0060] Step 1-3, attach the thin film temperature sensor and the full-bridge strain gauge to both sides of the sample, install the velocity sensor at the front end of the impact rod, and connect the thin film temperature sensor, the full-bridge strain gauge, the velocity sensor and the coil output end to the signal conditioning module;

[0061] Step 1-4: Connect the signal conditioning module to the signal acquisition module, and the signal acquisition module to the STM32 main control module;

[0062] Step 1-5, connect the STM32 main control module with the FLASH storage module, the serial communication module and the DAC control module;

[0063] Step 2, debugging the test device of the ferromagnetic material force-magnetic-thermal coupling model;

[0064] Step 2-1, use a small piece of bakelite to quickly pass through the speed sensor and observe whether the host computer has a speed signal;

[0065] Step 2-2, apply pressure to the sample through the gasket and observe whether the host computer has a stress signal;

[0066] Step 2-3, use a warm pack to heat the sample, and observe whether the host computer has temperature signals and induced electromotive force signals of the coil;

[0067] Step 3: The main control unit controls the controllable high-pressure gas cylinder to load power to act on the non-edge impact rod, and the impact rod passes through the speed sensor and hits the ferromagnetic material (test piece) attached to the strain gauge in the front coil winding;

[0068] Step 4: Place the ferromagnetic material attached to the full-bridge strain gauge and the temperature sensor into a temperature controller with a set temperature for heating, and collect the thermal stress and temperature in real time;

[0069] Step 5: Place the heated ferromagnetic material attached to the full-bridge strain gauge and the temperature sensor into the coil;

[0070] Step 6: Load power and measure temperature, stress, velocity and magnetic field changes simultaneously.

[0071] Step 7: The main control unit collects and stores the signal of the sensor unit and sends it to the host computer for display through the serial port.

Claims

1. A test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials, characterized in that: It includes a main control unit, a test device, a sensor unit and a host computer; the test device is used to realize impact test on the test piece at room temperature and the time after temperature control; the sensor unit is used to measure stress, temperature, speed non-electrical signal; the main control unit is used to control the controllable high-pressure gas cylinder and temperature controller in the test device, and to condition, collect and store the signal measured by the sensor unit, and then send the signal to the host computer for analysis and calculation.

2. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 1, characterized in that: The test device includes a controllable high-pressure gas cylinder, an impact rod, an impact table, a temperature controller and a test platform; the test platform is fixed on the ground, the controllable high-pressure gas cylinder is fixed on the test platform and connected to the impact rod, the impact rod and the impact table are coaxially arranged, and the end face of the impact rod is ensured to be parallel to the end face of the impact table; during the experiment, a gasket needs to be placed between the impact rod and the sample; the sample is set between the gasket and the impact table and the sample is placed in the coil; the temperature controller is used to heat the sample.

3. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 2, characterized in that: The sensor unit includes a full-bridge strain gauge, a thin film temperature sensor, a speed sensor and a coil; the speed sensor is fixedly installed at the front end of the impact rod, and the coil is fixed on the end surface of the impact platform; one end of the specimen is attached to the full-bridge strain gauge, and the other end is attached to the thin film temperature sensor; the speed sensor is used to measure the speed at which the impact rod hits the specimen, the full-bridge strain gauge is used to measure the stress on the specimen, the thin film temperature sensor is used to measure the temperature of the specimen, and the coil is used to measure the induced electromotive force.

4. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 3, characterized in that: The main control unit includes an STM32 main control module, a signal conditioning module, a DAC control module, an ADC acquisition module, a FLASH storage module and a serial communication module; the output ends of the coil, the speed sensor, the thin film temperature sensor and the full-bridge strain gauge are connected to the signal conditioning module, the signal conditioning module is connected to the signal acquisition module, and the signal acquisition module is connected to the STM32 main control module; the STM32 main control module is connected to the FLASH storage module, the serial communication module and the DAC control module; the DAC control module is connected to the temperature controller and the controllable high-pressure gas cylinder; and the serial communication module is connected to the host computer.

5. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 4, characterized in that: The STM32 main control module includes an STM32F407VET6 chip, a resistor R1, a resistor R2, a resistor R3, a resistor R49, a resistor R59, a resistor R60, a resistor R61, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, a capacitor C7, a crystal oscillator Y1 and a switch RST1; the resistor R3 and the resistor R49 are respectively connected to the 94th and 37th pins of the STM32F407VET6 chip, and the other ends are grounded; one end of the switch RST1, the resistor R2 and the capacitor C5 is connected to the STM32F407VET6 chip The 14th pin of the STM32F407VET6 chip is connected to the 14th pin of the STM32F407VET6 chip, the other end of the switch RST1 and the capacitor C5 are connected to the ground, and the other end of the resistor R2 is connected to 3.3V; one end of the resistor R60 is connected to the 21st pin of the STM32F407VET6 chip, and the other end is connected to the 19th pin of the STM32F407VET6 chip, and the 19th pin and the 21th pin of the STM32F407VET6 chip are connected to VDDA; the capacitor C6 is connected in parallel with the capacitor C7, one end of the two is connected to the 19th pin of the STM32F407VET6 chip, and the other end is connected to the 20th pin of the STM32F407VET6 chip; One end of resistor R59 is connected to pin 19 of the STM32F407VET6 chip, and the other end is connected to 3.3V; one end of resistor R61 is connected to pin 20 of the STM32F407VET6 chip, and the other end is grounded; one end of capacitor C1 and capacitor C2 are respectively connected to pin 49 and pin 73 of the STM32F407VET6 chip, and the other end is grounded; one end of crystal oscillator Y1 and resistor R1 are connected to pin 12 of the STM32F407VET6 chip, and the other end is connected to pin 13 of the STM32F407VET6 chip; one end of capacitor C3 is grounded, and the other end is connected to pin 12 of the STM32F407VET6 chip; one end of capacitor C4 is grounded, and the other end is connected to pin 13 of the STM32F407VET6 chip.

6. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 4, characterized in that: The signal conditioning module includes a CA3140 chip, a resistor R4, a resistor R5, a resistor R7, a resistor R8, a potentiometer R9, a capacitor C12, a capacitor C13, a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, and a connector P1; one end of the resistor R8 is connected to pin 3 of the CA3140 chip, and the other end is grounded; one end of the resistor R7 is connected to pin 6 of the CA3140 chip, the other end of the resistor R7 is connected to a section of the capacitor C18, the other end of the capacitor C18 is connected to one end of the resistor R4, the other end of the resistor R4 is connected to pin 2 of the connector P1, and pin 1 of the connector P1 is grounded; both ends of the potentiometer R9 are respectively connected to pins 1 and 5 of the CA3140 chip, and the variable resistance end and both ends of the potentiometer R9 are respectively connected to the CA3140 The 4th pin of the chip is connected; the positive electrode of capacitor C16 is connected to the 4th pin of CA3140 chip, and the negative electrode is grounded; one end of capacitor C17 is connected to the 4th pin of CA3140 chip, and the other end is grounded; the positive electrode of capacitor C13 is connected to the 4th pin of CA3140 chip connected to 15V, and the negative electrode is grounded; one end of capacitor C17 is connected to the 4th pin of CA3140 chip, and the other end is grounded; one end of capacitor C14 is connected to the connection point of capacitor C18 and resistor R4, and the other end is connected to one end of resistor R5 and capacitor C15, and the other end of resistor R5 and capacitor C15 is connected to the 2nd pin of CA3140 chip; one end of resistor R7 leads to the signal output terminal Signal_OUT, and the 2nd pin of the connector leads to the signal input terminal Signal_IN.

7. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 4, characterized in that: The ADC acquisition module includes an AD9238 chip module, channel A and channel B circuits. The composition of channel A and channel B circuits is the same, so only the acquisition circuit A is described; the AD9238 chip module includes an AD9238 chip, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R34, a resistor R35, a resistor R36, a resistor R37, a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C35, a capacitor C37, a capacitor C38, a capacitor C39, a capacitor C40, a capacitor C41, a capacitor C42, and a capacitor C44; one end of the capacitor C8 and the capacitor C35 are respectively connected to the 6th and 7th pins of the AD9238 chip, and the other end is grounded; the two ends of the capacitors C9, C10, and C11 are respectively connected to the 6th and 7th pins of the AD9238 chip, and the other ends are grounded; Connected to pin 6 and pin 7 of the AD9238 chip; one end of capacitor C37 and capacitor C38 are connected to pin 8 of the AD9238 chip, and the other end is grounded; one end of capacitor C39 and capacitor C44 are respectively connected to pin 10 and pin 11 of the AD9238 chip, and the other end is grounded; both ends of capacitor C9, capacitor C10, and capacitor C11 are respectively connected to pin 10 and pin 11 of the AD9238 chip; one end of resistor R19, resistor R21, resistor R22, resistor R35, resistor R36, and resistor R37 are respectively connected to pin 62, pin 60, pin 59, pin 20, pin 21, and pin 22 of the AD9238 chip, and the other end is grounded; resistor R20 and resistor R34 are respectively connected to pin 19 and pin 61 of the AD9238 chip, and the other end is connected to D3V3.

8. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 4, characterized in that: The FLASH storage module includes an MT29F32G08 chip, a resistor R45, a resistor R46, a resistor R47, a resistor R48, a capacitor C67 and a capacitor C68; one end of the resistor R46 is connected to pin 9 of the MT29F32G08 chip, and the other end is connected to 3.3V; one end of the resistor R47 is connected to pin 10 of the MT29F32G08 chip, and the other end is connected to 3.3V; one end of the resistor R48 is connected to pin 19 of the MT29F32G08 chip, and the other end is connected to 3.3V; pin 12 of the MT29F32G08 chip is connected to pin 37, and pin 13 is connected to pin 36; both ends of the capacitor C67 and the capacitor C68 are respectively connected to pin 36 and pin 37 of the MT29F32G08 chip; pin 36 of the MT29F32G08 chip is grounded, and pin 37 is connected to 3.3V.

9. The test system for measuring the force-magnetic-thermal coupling model of ferromagnetic materials according to claim 4, characterized in that: Further, the 23rd, 24th, 25th, 26th, 29th, 30th, 31st, 32nd, 67th, 68th, 69th, 3rd, 95th, 35th, 36th, 1st, 2nd, 91st, 92nd, 93rd, 98th, 38th, 5th, 4th, 97th, 96th, and 89th pins of the STM32F407VET6 chip are respectively connected to the 44th, 45th, 46th, 47th, 48th, 49th, 50th, 51st, 54th, 55th, 56th, 57th, 58th, 25th, 26th, 27th, 30th, 31st, 32nd, 33rd, 34th, 35th, 36th, 37th, 38th, 39th, and 63rd pins of the ADC acquisition module; Pin 39, 40, 41, 42, 43, 44, 45, 46, 87, 85, 54, 53, 58, 59, and 86 of the STM32F407VET6 chip are connected to pin 29, 30, 31, 32, 41, 42, 43, 44, 7, 8, 9, 10, 16, 17, and 18 of the FLASH memory module respectively; Pins 78, 79 and 74 of the STM32F407VET6 chip are connected to the TXD, RXD and GND pins of the serial communication module respectively; the Signal_OUT end of the signal conditioning module is connected to pin 1 of the P2 connector.

10. A test method for a test system for measuring a force-magnetic-thermal coupling model of a ferromagnetic material, characterized in that: Based on the test system described in claims 1-8, the specific steps are as follows: Step 1: Build a test device for the force-magnetic-thermal coupling model of ferromagnetic materials; Step 2, debugging the test device of the ferromagnetic material force-magnetic-thermal coupling model; Step 3: The main control unit controls the controllable high-pressure gas cylinder to load power to act on the non-edge impact rod, and the impact rod passes through the velocity sensor to hit the test piece attached to the strain gauge in the front coil winding; Step 4: Place the test piece with the full-bridge strain gauge and temperature sensor in a temperature controller with a set temperature to heat it, and collect the thermal stress and temperature in real time; Step 5: Place the heated test piece with the full-bridge strain gauge and temperature sensor attached to it into the coil; Step 6: Load power and measure temperature, stress, velocity and magnetic field changes simultaneously; Step 7: The main control unit collects and stores the signal of the sensor unit and sends it to the host computer through the serial port for calculation and display.

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