High-precision glue coating process for quartz substrate production for IC chips

Abstract

The application discloses a high-precision glue coating process for quartz substrate production of IC chips, and relates to the technical field of semiconductor manufacturing. In order to solve the problems that high-precision quartz substrates are usually high in cost, low in production capacity, and low in yield, and are difficult to realize batch production due to poor consistency caused by the properties of the quartz substrate, the high-precision glue coating process for quartz substrate production of IC chips realizes high-precision and uniform coating of photoresist on the quartz substrate by setting glue coating parameters and combining a glue coating wheel with geometric grooves, greatly reduces the non-uniformity of glue coating, improves production efficiency and product quality, forms a complex and multi-layer pattern structure on the quartz substrate through twice glue coating and patterning processes, ensures the accuracy and reliability of the product, reduces material waste and the defective rate, reduces production cost, has remarkable economic benefits and wide application prospect, and helps to improve the yield of the product and market competitiveness.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of semiconductor manufacturing, in particular to a high-precision glue coating process for quartz substrate production of IC chips. BACKGROUND

[0002] With the rapid development of the semiconductor industry, the requirement for IC chip manufacturing precision is increasing, and the high-precision glue coating process has become the key to improving product quality and performance. For example, the patent application with the publication number CN115793397A discloses a high-precision quartz substrate glue coating and its production process. The glue coating is provided with a double-layer structure, which is a first glue layer attached to the outer surface of the quartz substrate material and a second glue layer connected to the first glue layer. The width ratio of the second glue layer is greater than that of the first glue layer. The first glue layer is made of the following materials by weight: high-temperature-resistant silicone 10-20 parts, cresol formaldehyde resin 30-50 parts, photosensitizer 11-13 parts, and additive 65-70 parts. The process sets up a double-layer structure for glue coating. The material for preparing the first glue layer is increased by adding high-temperature-resistant silicone material, which can resist high temperature and impact. When the second glue layer is pressurized, the first glue layer is not easy to deform, ensuring that only the second glue layer is increased in width, so that the glue coating pattern shape reaches the inverted T-shaped pattern.

[0003] However, the above-mentioned patent realizes the glue coating pattern shape to reach the inverted T-shaped pattern by twice glue coating, but still has the following problems:

[0004] In the prior art, high-precision quartz substrates usually have high cost, low production capacity, and low yield. Due to the properties of the quartz substrate, consistency is poor, and batch production is difficult to achieve. SUMMARY

[0005] The purpose of the present application is to provide a high-precision glue coating process for quartz substrate production of IC chips. Through twice glue coating and patterning process, a complex, multi-layer pattern structure is formed on the quartz substrate, ensuring the accuracy and reliability of the product, reducing material waste and defective rate, comprehensively detecting the quality of the glue coating, ensuring that the quality of the product meets high standards, and helping to improve the yield and market competitiveness of the product, so as to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned purpose, the application provides the following technical scheme:

[0007] The high-precision glue coating process for quartz substrate production of IC chips comprises the following steps:

[0008] S1: Quartz substrate cleaning: use an ultrasonic cleaner and add a cleaning agent to the ultrasonic cleaner to clean the quartz substrate, remove impurities and stains on the surface of the quartz substrate, and perform drying treatment after cleaning to remove oil, dust and other impurities on the surface, ensuring that the substrate surface is clean and flat;

[0009] S2: Preparation of glue applying head: prepare a glue applying device, obtain the specification parameters of the quartz substrate to be glued, and select appropriate glue applying speed, pressure and amount according to the specification parameters;

[0010] S3: First gluing and patterning: start the glue applying device based on the set glue applying parameters, perform first gluing on the surface of the quartz substrate, and perform pre-baking, exposure, development, post-baking and etching to form a first layer of pattern structure;

[0011] S4: Second gluing and patterning: apply a second layer of glue on the substrate after the first etching, complete the formation of the second layer of pattern structure through pre-baking, secondary lithography, development, post-baking and secondary etching, and remove the excess glue attached to the surface, completing the process;

[0012] S5: Glue applying quality detection: detect the quality of the quartz substrate after completing the glue applying process to ensure the gluing precision and uniformity, and transfer the qualified quartz substrate to the next manufacturing step.

[0013] Further, the quartz substrate cleaning in S1 further includes activating the quartz substrate: placing the dried quartz substrate in a UV irradiation device, the UV intensity in the UV irradiation device is: 1200mW / cm 2 -1600mW / cm 2 , and the activation time is 1min-3min.

[0014] Further, the preparation of the glue applying head and the setting of the glue applying parameters specifically include:

[0015] A glue applying wheel and a glue leveling wheel are arranged in the glue applying device, and the photoresist is uniformly attached to the glue applying wheel based on the extrusion of the glue applying wheel and the glue leveling wheel, ensuring that the pressure into both ends of the glue roller is uniform;

[0016] The surface of the glue applying wheel is a trapezoidal structure geometric groove, and the groove depth is 120μm-200μm;

[0017] The setting of the glue applying parameters specifically includes: setting the viscosity of the photoresist, the glue supply amount and the glue applying speed, wherein the viscosity of the photoresist is 20mPa·s-25mPa·s, the glue supply amount is not less than 10mL / min, and the glue is applied at a speed of 4ml / min-5mL / min.

[0018] Further, the first time in S3 glue and patterning, the specific steps include:

[0019] S301: once glue: after cleaning and drying the quartz substrate is placed on the chuck of the automatic glue machine, ensure the substrate is stable fixed, start the glue program, make the glue head along the substrate surface uniform speed, coated with a first layer of glue;

[0020] S302: pre-baking: after the completion of the coating, the quartz substrate is pre-baked at 90-120 ℃ baking temperature, pre-baking duration is 1-2 min, to remove the solvent in the photoresist, reduce its flowability in the exposure process;

[0021] S303: once exposure: the pre-baked quartz substrate is loaded into the photoetching machine, adjust the exposure parameters, ensure the pattern is accurately transferred to the photoresist layer, ensure the alignment accuracy and exposure uniformity of the photo mask and quartz substrate during exposure;

[0022] S304: once development: the exposed quartz substrate is placed in the developing solution, according to the corresponding time and temperature provided by the developer supplier for development, and the development effect is monitored;

[0023] S305: post-baking: after development, the quartz substrate is post-baked at 150-250 ℃ baking temperature, post-baking duration is 15-30 min, completely curing the photoresist, enhancing its durability in the subsequent etching and cleaning steps;

[0024] S306: once etching: according to the pattern of the cured photoresist layer, the quartz substrate is etched;

[0025] S307: glue removal and cleaning: after etching, the remaining photoresist is dissolved using the glue remover, and the quartz substrate is cleaned to prepare for the next round of glue coating.

[0026] Further, the second time in S4 glue and patterning, the specific steps include:

[0027] S401: twice glue: a second layer of glue is coated on the substrate after the first etching, which has different properties to meet the subsequent process requirements;

[0028] S402: pre-baking: pre-baking treatment is carried out using slightly lower than the first coating pre-baking parameters;

[0029] S403: twice exposure: the second layer of glue is exposed using a photoetching machine;

[0030] S404: twice development: the exposed quartz substrate is placed in the developing solution for development treatment, removing the unexposed glue part;

[0031] S405: post-baking: the same post-baking parameters as after the first development are used for processing, and the glue layer is cured;

[0032] S406: second etching: the quartz substrate is etched according to the pattern of the second layer of glue to form the required surface microstructure of the quartz substrate;

[0033] S407: glue removal and cleaning: after etching, the remaining second layer of glue is dissolved using a glue remover, and the quartz substrate is finally cleaned to complete the entire glue coating process.

[0034] Further, in the first glue coating, the second layer of glue is photoresist, and the first layer of glue is added with high-temperature-resistant silicon resin, and the addition amount of the high-temperature-resistant silicon resin is 10-20 parts of the total weight of the photoresist; in the second glue coating, the second layer of glue is an anti-reflection coating, wherein a compound containing a metal element is added, and the addition amount of the compound containing a metal element is 1-10 parts of the total weight of the second layer of glue, and the heat resistance of the first layer of glue is higher than that of the second layer of glue.

[0035] Further, during the first exposure and the second exposure, the photomask is placed between the light source and the glue layer, and the glue layer is selectively irradiated using an ultraviolet light source.

[0036] Further, during the first development and the second development, the developer is used to remove the uncured adhesive part to form a pattern corresponding to the pattern of the photomask.

[0037] Further, in S3 and S4, an intermediate baking is further included after the first exposure and the second exposure, the baking temperature is between 120℃-150℃, and the baking time is 3min-5min, which is used to further cure the photoresist and improve its adhesion to the substrate.

[0038] Further, in S5, the glue coating quality detection further includes:

[0039] The multi-point thickness measurement of the glue coating layer of the quartz substrate after the glue coating process is performed, and the thickness uniformity of the glue coating layer is evaluated based on the measurement data, wherein the measurement points use a random point measurement method;

[0040] and the optical performance of the glue coating layer, the adhesion between the glue coating layer and the quartz substrate, and the environmental adaptability test are performed one by one;

[0041] Based on the thickness measurement result, the thickness uniformity evaluation result and the test result, a quality detection report of the quartz substrate is generated.

[0042] Compared with the prior art, the beneficial effects of the present application are:

[0043] This invention proposes a high-precision photoresist coating process for quartz substrate production of IC chips. By setting coating parameters and using a coating wheel with geometric grooves, high-precision and uniform coating of photoresist is achieved on the quartz substrate, greatly reducing coating unevenness, improving production efficiency and product quality. Through two coating and patterning processes, complex, multi-layered pattern structures can be formed on the quartz substrate, ensuring product accuracy and reliability, reducing material waste and defect rates, and lowering production costs. It has significant economic benefits and broad application prospects. After the process is completed, the coating quality is comprehensively inspected to ensure that the product quality meets high standards, which helps to improve the product yield and market competitiveness. Attached Figure Description

[0044] Figure 1 This is a flowchart illustrating the high-precision adhesive coating process for the production of quartz substrates for IC chips according to the present invention.

[0045] Figure 2 This is a diagram illustrating the first adhesive application and patterning steps of the present invention;

[0046] Figure 3 This diagram illustrates the second adhesive application and patterning steps of the present invention. Detailed Implementation

[0047] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] The present invention will be further described below with reference to specific embodiments:

[0049] like Figure 1 As shown in this embodiment, a high-precision coating process for quartz substrate production of IC chips includes the following steps:

[0050] S1: Quartz substrate cleaning: Use an ultrasonic cleaner and add cleaning agent (such as isopropanol, deionized water, etc.) to clean the quartz substrate to remove impurities and stains on the surface of the quartz substrate. After cleaning, dry the substrate to remove grease, dust and other impurities on the surface, and ensure that the substrate surface is clean and flat.

[0051] Activation of the quartz substrate: The dried quartz substrate is placed in an ultraviolet irradiation device with an ultraviolet intensity of 1200 mW / cm². 2 -1600 mW / cm 2, the activation time is 1 min-3 min;

[0052] S2: Preparation of glue head: prepare the glue coating device, obtain the specification parameters of the quartz substrate to be coated, select the appropriate coating speed, pressure and coating amount according to the specification parameters;

[0053] Specifically, the preparation of the glue head and the setting of the glue coating parameters include:

[0054] A glue coating wheel and a glue uniformizing wheel are arranged in the glue coating device. The photoresist is uniformly attached to the glue coating wheel based on the extrusion of the glue coating wheel and the glue uniformizing wheel, so as to ensure that the pressure into the both ends of the glue coating roller is uniform.

[0055] The surface of the glue coating wheel is a trapezoidal structure geometric groove, and the groove depth is 120 μm-200 μm.

[0056] The setting of the glue coating parameters specifically includes: setting the viscosity of the photoresist, the glue supply amount and the glue coating speed, wherein the viscosity of the photoresist is 20 mPa·s-25 mPa·s, the glue supply amount is not less than 10 mL / min, and the glue coating speed is 4 ml / min-5 mL / min.

[0057] In the embodiment, the preparation of the glue coating device and the setting of the glue coating parameters can realize the uniform coating of the photoresist on the quartz substrate, improve the glue coating precision, the trapezoidal structure geometric groove helps to further uniformly distribute the photoresist, reduces the non-uniformity of the glue coating, improves the production efficiency and reduces the defective rate, reduces the material waste, reduces the production cost, and is suitable for different specifications of the quartz substrate, has strong flexibility and adaptability.

[0058] S3: First glue coating and patterning: start the glue coating device based on the set glue coating parameters, perform the first glue coating on the surface of the quartz substrate, and perform pre-baking, exposure, development, post-baking and etching to form a first layer of pattern structure.

[0059] S4: Second glue coating and patterning: coat a second layer of glue on the substrate after the first etching, complete the formation of the second layer of pattern structure through pre-baking, secondary photoetching, development, post-baking and secondary etching, and remove the excess glue attached to the surface, complete the process.

[0060] S5: Glue coating quality detection: detect the quality of the quartz substrate after the glue coating process to ensure the glue coating precision and uniformity, and transfer the quartz substrate that passes the detection to the next manufacturing step, such as doping, deposition or other microelectronic manufacturing processes.

[0061] The multi-point thickness measurement of the glue coating layer of the quartz substrate after the glue coating process is performed, and the thickness uniformity of the glue coating layer is evaluated based on the measurement data, wherein the measurement points adopt a random point measurement mode.

[0062] and the adhesion between the glue layer and the quartz substrate, and environmental adaptability test are carried out one by one;

[0063] Based on the thickness measurement result, the thickness uniformity evaluation result and the test result, a quality detection report of the quartz substrate is generated.

[0064] In the embodiment, through the setting of the glue coating parameters combined with the glue coating wheel with geometric grooves, high-precision and uniform coating of the photoresist on the quartz substrate is realized, the non-uniformity of the glue coating is greatly reduced, the production efficiency and product quality are improved, through the twice glue coating and patterning process, a complex and multi-layer pattern structure can be formed on the quartz substrate, the accuracy and reliability of the product are ensured, material waste and defective rate are reduced, production cost is reduced, and significant economic benefits and wide application prospects are achieved. After the process is completed, the glue coating quality is comprehensively detected to ensure that the product quality meets the high standard requirements, which helps to improve the good product rate and market competitiveness of the product.

[0065] In order to better control the glue coating quality and process, reference is made to Figures 2-3 The double-layer glue coating process is carried out, and exposure, development and etching are carried out to form a fine pattern structure.

[0066] Specifically in the embodiment, the first glue coating and patterning in S3 include the following specific steps:

[0067] S301: One-time glue coating: the cleaned and dried quartz substrate is placed on the suction cup of the automatic glue coating machine to ensure that the quartz substrate is stably fixed, the glue coating program is started, the glue coating head moves at a constant speed along the surface of the substrate, and the first layer of glue is coated;

[0068] S302: Pre-baking: after the glue coating is completed, the quartz substrate is pre-baked at a baking temperature of 90-120°C, the pre-baking time is 1-2min, the solvent in the glue is removed, the adhesion of the glue layer is enhanced, the solvent in the photoresist is removed, and the flowability of the photoresist in the exposure process is reduced;

[0069] S303: One-time exposure: the pre-baked quartz substrate is loaded onto the photoetching machine, the exposure parameters such as exposure energy, time, focal length, etc. are adjusted to ensure that the pattern is accurately transferred to the photoresist layer, and the alignment accuracy and exposure uniformity of the photomask and the quartz substrate during the exposure process are ensured;

[0070] S304: One-time development: the exposed quartz substrate is placed in the developing solution, and the corresponding time and temperature provided by the developing solution supplier are used for development, and the development effect is monitored;

[0071] S305: Post-baking: After development, post-baking is performed on the quartz substrate at a baking temperature of 150-250°C for 15-30min, completely curing the photoresist and enhancing its durability in subsequent etching and cleaning steps;

[0072] S306: First etching: Etching is performed on the quartz substrate according to the pattern of the cured photoresist layer;

[0073] S307: Photoresist removal and cleaning: After etching, the remaining photoresist is dissolved using a photoresist remover, and the quartz substrate is cleaned to prepare for the next round of coating.

[0074] Specifically in this embodiment, the second coating and patterning in S4 include the following steps:

[0075] S401: Second coating: Using the suction cup of the automatic coating machine, a second layer of glue is coated on the quartz substrate after the first etching using the same coating parameters;

[0076] S402: Pre-baking: Pre-baking is performed using slightly lower pre-baking parameters after the first coating, specifically: pre-baking the quartz substrate at a baking temperature of 80-110°C for 1-2min;

[0077] S403: Second exposure: The second layer of glue is exposed using a photolithography machine;

[0078] S404: Second development: The quartz substrate after the second exposure is placed in a developing solution for development treatment to remove the unexposed glue portion;

[0079] S405: Post-baking: The same post-baking parameters as after the first development are used for treatment to cure the glue layer;

[0080] S406: Second etching: Etching is performed on the quartz substrate according to the pattern of the second layer of glue to form the required surface microstructure of the quartz substrate;

[0081] S407: Photoresist removal and cleaning: After etching, the remaining second layer of glue is dissolved using a photoresist remover, and the quartz substrate is finally cleaned to complete the entire coating process.

[0082] In this embodiment, the quartz substrate is placed at a preset temperature for pre-baking and post-baking to volatilize the solvent in the adhesive, enhance the adhesion between the adhesive and the substrate, reduce the flowability of the photoresist during exposure, ensure the accuracy of pattern transfer, and improve the wear resistance and resistance to developer soaking of the adhesive film. The optimized coating parameters and temperature control reduce the defects that may occur during the coating process. The secondary etching of the quartz substrate forms the required surface microstructure, which significantly improves the performance and stability of the coating layer, the clarity and precision of the pattern, the production efficiency, and the controllability and repeatability of the process, providing a stable process foundation for mass production.

[0083] To better improve the performance and stability of the adhesive layer, and improve the clarity and edge sharpness of the development, the photomask is placed between the light source and the adhesive layer during the first exposure and the second exposure. The adhesive layer is selectively irradiated using a UV light source to ensure the accuracy and consistency of pattern transfer. The short wavelength and high energy of UV light can effectively initiate photochemical reactions in the photoresist, thereby improving the accuracy and efficiency of exposure. After the first exposure and the second exposure, intermediate baking is performed at a temperature of 150-250°C for 3-5 minutes to further solidify the photoresist. The solvent in the photoresist will further volatilize, and the polymer chains will further crosslink, thereby enhancing the stability and mechanical strength of the adhesive layer, improving its adhesion to the substrate, and reducing the peeling and deformation in subsequent processes. During the first development and the second development, the uncured adhesive is removed using a developer to form a pattern corresponding to the photomask pattern, ensuring the clarity and edge sharpness of the pattern.

[0084] In traditional coating processes, deformation or peeling occurs due to insufficient heat resistance, resulting in damage to the coating layer. In the etching process, the adhesive and the substrate material do not react sufficiently, leading to poor etching selectivity and affecting the clarity and precision of the pattern.

[0085] In order to solve the above problems, in the embodiment, in the first gluing, the second layer of glue is photoresist, and the first layer of glue is added with high-temperature-resistant silicon resin to improve the heat resistance, and the added amount of the high-temperature-resistant silicon resin is 10-20 parts of the total weight of the photoresist; the glue with high viscosity and heat resistance ensures the stability in the high-temperature process, reduces the deformation and peeling of the glue layer; in the second gluing, the second layer of glue is an anti-reflection coating, and the second layer of glue is added with a compound containing metal elements to improve the etching selectivity, and the added amount of the compound containing metal elements is 1-10 parts of the total weight of the second layer of glue; the first layer of glue and the second layer of glue form a double-layer structure on the quartz substrate, and the heat resistance of the first layer of glue is higher than that of the second layer of glue, not only the advantages of the respective materials are utilized, but also the overall stability of the glue layer is improved through the reasonable distribution of thermal stress, and the deformation and peeling phenomenon in the high-temperature process are effectively reduced.

[0086] The above is only the preferred specific embodiment of the present application, but the protection scope of the present application is not limited to this, any person skilled in the art can make equivalent replacement or change according to the technical scheme and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A high-precision glue coating process for quartz substrate production for IC chips, characterized by, The method comprises the following steps: S1: quartz substrate cleaning: using an ultrasonic cleaner, and adding a cleaning agent in the ultrasonic cleaner to clean the quartz substrate, remove impurities and stains on the surface of the quartz substrate, and perform drying treatment after cleaning; S2: glue preparation: preparing a glue coating device, obtaining the specification parameters of the quartz substrate to be coated with glue, setting the glue coating parameters according to the specification parameters, specifically including: The glue coating device is provided with a glue coating wheel and a glue uniformizing wheel, and the glue is uniformly attached to the glue coating wheel based on the extrusion of the glue coating wheel and the glue uniformizing wheel; The surface of the glue coating wheel is a trapezoidal structure geometric groove, and the groove depth is 120-200 μm; The setting of the glue coating parameters specifically includes setting the viscosity of the photoresist, the glue supply amount and the glue coating speed, wherein the viscosity of the photoresist is 20-25 mPa·s, and the glue supply amount is not less than 10 mL / min; S3: first glue coating and patterning: starting the glue coating device based on the set glue coating parameters, performing first glue coating on the surface of the quartz substrate, and performing pre-baking, exposure, development, post-baking, etching and forming a first layer of pattern structure; S4: second glue coating and patterning: coating a second layer of glue on the substrate after the first etching, and completing the formation of the second layer of pattern structure by pre-baking, secondary photoetching, development, post-baking and secondary etching, and removing the excess glue attached to the surface, and completing the process; S5: glue coating quality detection: detecting the quality of the quartz substrate after the glue coating process, and transferring the quartz substrate that passes the detection to the next manufacturing step; In the first glue coating, the first layer of glue is photoresist, and high-temperature-resistant silicon resin is added to the first layer of glue, and the addition amount of the high-temperature-resistant silicon resin is 10-20 parts of the total weight of the photoresist; in the second glue coating, the second layer of glue is an anti-reflection coating, wherein a compound containing a metal element is added, and the addition amount of the compound containing a metal element is 1-10 parts of the total weight of the second layer of glue; the first layer of glue and the second layer of glue form a double-layer structure on the quartz substrate, and the heat resistance of the first layer of glue is higher than that of the second layer of glue.

2. The high-precision glue coating process for quartz substrate production for IC chips according to claim 1, characterized in that: The S1 quartz substrate cleaning further comprises activating the dried quartz substrate by placing the dried quartz substrate in an ultraviolet irradiation device, wherein the intensity of the ultraviolet light in the ultraviolet irradiation device is 1200 mW / cm 2 -1600 mW / cm 2 and the activation time is 1-3 minutes.

3. The high-precision glue coating process for quartz substrate production for IC chips according to claim 1, characterized in that: The first glue coating and patterning in S3 specifically includes the following steps: S301: first glue coating: placing the quartz substrate on the glue coating device, and uniformly coating the first layer of glue by the glue coating wheel; S302: pre-baking: after the glue coating is completed, pre-baking the quartz substrate at a baking temperature of 90-120℃, the pre-baking time is 1-2 min, removing the solvent in the glue, and enhancing the adhesion of the glue layer; S303: first exposure: exposing the quartz substrate coated with glue by using a photoetching machine, and defining a preset quartz substrate surface pattern through a photomask; S304: first development: developing the exposed quartz substrate, removing the part of the glue that is not hardened by light, and leaving the patterned glue layer; S305: post-baking: after development, post-baking the quartz substrate at a baking temperature of 150-250℃, and the post-baking time is 15-30 min, completely curing the photoresist; S306: first etching: etching the quartz substrate according to the pattern of the cured photoresist layer; S307: After etching, the remaining photoresist is dissolved using a remover, and the quartz substrate is cleaned to prepare for the next round of glue coating.

4. The high-precision glue coating process for quartz substrate production for IC chips according to claim 3, characterized in that: The second coating and patterning in S4 include the following steps: S401: Second coating: Apply a second layer of glue on the substrate after the first etching; S402: Pre-baking: Pre-bake the quartz substrate at a baking temperature of 80-110°C for 1-2 minutes; S403: Second exposure: Use a photolithography machine to expose the second layer of glue; S404: Second development: Place the exposed quartz substrate in a developing solution for development to remove the unexposed glue portion; S405: Post-baking: Use the same post-baking parameters as after the first development to solidify the glue layer; S406: Second etching: Etch the quartz substrate according to the pattern of the second layer of glue to form the required surface microstructure of the quartz substrate; S407: Remover cleaning: After etching, the remaining second layer of glue is dissolved using a remover, and the quartz substrate is finally cleaned to complete the entire glue coating process.

5. The high-precision glue coating process for quartz substrate production for IC chips according to claim 4, characterized in that: During the first and second exposures, the photomask is placed between the light source and the glue layer, and the glue layer is selectively irradiated using a UV light source.

6. The high-precision glue coating process for quartz substrate production for IC chips according to claim 4, wherein: During the first and second developments, the developing solution is used to remove the uncured glue portion to form a pattern corresponding to the photomask pattern.

7. The high-precision glue coating process for quartz substrate production for IC chips according to claim 4, wherein: In S3 and S4, an intermediate baking is performed after the first and second exposures, with a baking temperature of 120-150°C and a baking time of 3-5 minutes, to further solidify the photoresist.

8. The high-precision glue coating process for quartz substrate production for IC chips according to claim 1, wherein: The glue coating quality detection in S5 further includes: Multi-point thickness measurement of the glue coating layer on the quartz substrate after the glue coating process, and evaluation of the thickness uniformity of the glue coating layer based on the measurement data, where the measurement points use a random point measurement method; And test the optical performance of the glue coating layer, the adhesion between the glue coating layer and the quartz substrate, and the environmental adaptability one by one; Based on the thickness measurement results, thickness uniformity evaluation results, and test results, generate a quality detection report for the quartz substrate.

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