Heterogeneous tuberculosis battery, preparation method and auxiliary tweezers
Through the combination of heteronodule battery structure and graphene electrode, the problem of insufficient self-absorption effect and electrical performance of nuclear batteries is solved, efficient energy conversion and lightweighting are achieved, and the stability of the substrate is ensured during the preparation process.
Patent Information
- Application Number
- CN202410876167.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-02
- Publication Date
- 2024-12-20
AI Technical Summary
Nuclear batteries have problems such as self-absorbing effects that lead to waste of radio sources, excessive radiation damage, insufficient electrical performance, and the substrate is prone to breaking or falling during the preparation process.
Using heteronodule battery structures, including P-type, I-type and N-type aluminum gallium arsenic layers, combined with graphene electrodes and gallium arsenic substrates, aluminum gallium arsenic materials are prepared by molecular beam epitaxial method, and auxiliary tweezers are used to ensure Stable clamping of substrate.
It improves the energy conversion efficiency and output power density of nuclear batteries, reduces volume and mass, enhances electrical performance, is suitable for microelectromechanical systems, and avoids the breakage or drop of the substrate during the pickling process.
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Figure CN119170317A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of nuclear battery preparation, in particular to a heterogeneous nodule nuclear battery and a preparation method and auxiliary tweezers. Background Art
[0002] A nuclear battery is a device that uses nuclear reactions to generate energy. Nuclear batteries use the energy released during the decay of radioactive isotopes to generate electricity. This energy conversion method can provide electricity for a long time because the decay rate of nuclear materials is very slow. Nuclear batteries are often used in micro-electromechanical systems for specific applications that require long-term uninterrupted power supply, such as spacecraft, deep-sea equipment, pacemakers, etc.
[0003] In beta radiation voltaic effect nuclear batteries, the commonly used radiation sources are mainly 3 T. 147 Pm, 90 Sr / 90 Y et al. 3 The T source has attracted widespread attention because the β particles it emits are relatively mild, will not cause significant displacement damage to semiconductor devices, and have low density and light weight. 90 The power density of Sr radiation source is higher, however 90 The average kinetic energy of the particles released by Sr during β decay is too large, causing displacement damage to the semiconductor. In addition, the thicker shielding material required for such β particles is not conducive to its application in micro-electromechanical systems.
[0004] 3 T is a long half-life low-energy β-radioactive nuclide. Since it cannot be used in nuclear batteries in gaseous form, it is prepared as Ti 3 T 2( Titanium tritide), due to 3 The self-absorption effect of the T source leads to low energy conversion efficiency of the nuclear battery. Considering the self-absorption effect of the radiation source, its thickness is determined to be 0.7 microns.
[0005] Aluminum gallium arsenide (AlxGa1-xAs) belongs to the second generation of semiconductor materials. Its lattice parameters are similar to those of gallium arsenide. Compared with gallium arsenide, Algaar has a larger bandgap width, ranging from 1.4eV to 2.2eV. At present, it is mostly used to manufacture optoelectronic devices and laser diodes. Algaar has the advantages of gallium arsenide, such as high melting point, stable chemical properties, large bandgap width, high electron mobility, and low intrinsic carrier concentration. These advantages can ensure that gallium arsenide is used in manufacturing stable and durable, with low reverse saturation current density and high open circuit current. In addition, the production technology of GaAs materials is mature and has strong radiation resistance. Compared with gallium arsenide, aluminum gallium arsenide has additional advantages: due to the different ratios of aluminum and gallium elements, aluminum gallium arsenide can adjust parameters such as band gap width, electron affinity, relative dielectric constant, valence band state density and conduction band state density, thereby realizing the regulation of the material's band structure. By adjusting the aluminum ratio (i.e., the value of x in AlxGa1-xAs is between 0 and 1, the molar fraction of aluminum), a heterojunction can be formed between different layers to form a PIN structure, which is beneficial to the transport of carriers.
[0006] Although aluminum gallium arsenide is not currently used as a transducer material for nuclear batteries and is mainly used in optoelectronics and optical communications, due to its excellent performance, aluminum gallium arsenide can be used to prepare new nuclear battery transducer devices, thereby improving the energy deposition rate of nuclear batteries and the speed of electron-hole pair generation, and ultimately increasing the output power density of nuclear batteries, giving them better electrical properties. Molecular beam epitaxy (MBE) is used to prepare aluminum gallium arsenide materials.
[0007] During the manufacturing process of nuclear batteries, the substrate needs to be pickled with acid. During the pickling process, tweezers are generally used to clamp the substrate. Because the substrate of the nuclear battery is relatively fragile, it is difficult for workers to control the clamping force when using tweezers to clamp it, which makes the substrate easy to break or fall off during the pickling process. Summary of the invention
[0008] The purpose of this section is to summarize some aspects of embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and the invention title of this application to avoid blurring the purpose of this section, the specification abstract and the invention title, and such simplifications or omissions cannot be used to limit the scope of the present invention.
[0009] The present invention is proposed in view of the problems that the self-absorption effect of nuclear batteries in the above or prior art leads to waste of radiation sources, excessive radiation damage, insufficient electrical performance, and the substrate is easily broken or dropped during the pickling process when preparing the nuclear battery.
[0010] Therefore, an object of the present invention is to provide a heterogeneous nodule battery.
[0011] In order to solve the above technical problems, the present invention provides the following technical solutions: a heterojunction battery, comprising a heterojunction, which comprises a P-type aluminum gallium arsenide layer, an I-type aluminum gallium arsenide layer and an N-type aluminum gallium arsenide layer, wherein the I-type aluminum gallium arsenide layer is arranged between the P-type aluminum gallium arsenide layer and the N-type aluminum gallium arsenide layer, a positive graphene electrode is arranged on the side of the P-type aluminum gallium arsenide layer away from the I-type aluminum gallium arsenide layer, and a Ti is arranged on the side of the positive graphene electrode away from the P-type aluminum gallium arsenide layer. 3 T 2 A radiation source, wherein a gallium arsenide substrate is disposed on a side of the N-type aluminum gallium arsenide layer away from the I-type aluminum gallium arsenide layer, and a negative graphene electrode is disposed on a side of the gallium arsenide substrate away from the I-type aluminum gallium arsenide layer.
[0012] As a preferred embodiment of the heterogeneous nodule battery of the present invention, the positive graphene electrode and the negative graphene electrode are electrically connected, and a load resistor is provided between the positive graphene electrode and the negative graphene electrode.
[0013] As a preferred embodiment of the heterojunction battery of the present invention, the doping concentration of the P-type AlGaAs layer is 3.1×10 18 cm -3 , the aluminum ratio is 0.94, the thickness is 0.17 μm, and the doping concentration of the I-type aluminum gallium arsenide layer is 9.1×10 15 cm -3 , the aluminum ratio is 0.74, the thickness is 1.80 μm, and the doping concentration of the N-type aluminum gallium arsenide layer is 3.1×10 18 cm -3 , the aluminum ratio is 0.5 and the thickness is 0.10μm.
[0014] The present invention also provides the following technical solution: a method for preparing a heterogeneous nodule battery, which is used to prepare a heterogeneous nodule battery, comprising vacuum treatment: preparing a substrate, selecting a gallium arsenide substrate, using auxiliary tweezers to clamp and pickle, ensuring that the surface of the gallium arsenide substrate is clean and flat, placing the gallium arsenide substrate in an MBE system, and vacuuming the substrate under a vacuum condition of 10 -7 torr, annealing treatment is performed for 48 hours to remove surface impurities and oxides;
[0015] Heating source loading: loading metal aluminum, gallium and arsenide sources into the heating chamber of the MBE system;
[0016] Vacuum extraction: Turn on the vacuum pump and pump the system to a high vacuum state, ensuring that the pressure in the system is within 10 -8 ~10 - 9 torr to ensure a stable experimental environment;
[0017] Preheat the heating source to 500°C for 1 hour to gradually convert the source material into a vapor state;
[0018] Growth: Opening or controlling a molecular beam at an open orifice near the surface of the GaAs substrate to deposit aluminum, gallium, and arsenic atoms on the GaAs substrate to form an AlGaAs thin film;
[0019] Cooling: After the growth is completed, gradually reduce the temperature of the source, stop the molecular beam, and allow the system to cool to room temperature;
[0020] Preparation of graphene electrode: 1 mg / mL graphene aqueous solution is filtered and vacuum dried to obtain graphene film; then the graphene film is cut into thin sheets and packaged into graphene electrode sheets with tape;
[0021] Assembly: Ti 3 T 2 Radiation source, heterojunction, GaAs substrate, graphene electrodes and wire assembly.
[0022] Beneficial effects of the heterojunction nuclear battery of the present invention: The present invention adjusts the aluminum ratio in aluminum gallium arsenide to form a PIN structure heterojunction as a nuclear battery transducer, thereby solving the problems of current nuclear batteries that suffer from self-absorption effect leading to waste of radiation sources, excessive radiation damage, and insufficient electrical performance. In addition, while maintaining high electrical properties such as output power density, the volume, thickness, and weight of the nuclear battery are reduced, while achieving the goals of high efficiency and lightweight, making the battery more suitable for micro-electromechanical systems.
[0023] The present invention also provides the following technical solution: an auxiliary tweezers, applied to a method for preparing a heterogeneous nodule battery, comprising a clamping mechanism, which comprises a hand-held rod, a fixed tweezers arranged on the hand-held rod, and a movable tweezers rotatably mounted on the fixed tweezers, the movable tweezers being provided with a pressing plate, the movable tweezers being provided with a strip groove, and the fixed tweezers being provided with a first through hole, an adjustment mechanism, which comprises an adjustment component arranged on the fixed tweezers and the movable tweezers, and a spring sleeved on the adjustment component, the adjustment component comprising an adjustment piece arranged on the fixed tweezers, and a tensioning piece movably mounted in the strip groove and connected to the adjustment piece.
[0024] As a preferred solution of the auxiliary tweezers of the present invention, the adjusting member includes an adjusting rod movably installed in the first through hole, a stopper arranged at one end of the adjusting rod, and a threaded cavity opened at the end of the adjusting rod away from the stopper, the tensioning member includes a threaded rod matching the thread of the threaded cavity, a connecting rod arranged at the end of the threaded rod away from the adjusting rod, and a baffle rotatably installed at the end of the connecting rod away from the threaded rod.
[0025] As a preferred solution of the auxiliary tweezers of the present invention, the connecting rod is cylindrical, and the diameter of the connecting rod matches the width of the strip groove, and pads are provided at both ends of one side of the baffle close to the side wall of the movable tweezers.
[0026] As a preferred solution of the auxiliary tweezers of the present invention, a limiting seat is provided at one end of the fixed tweezers close to the movable tweezers, and a second through hole is opened on the limiting seat, and the second through hole is movably matched with the connecting rod.
[0027] As a preferred solution of the auxiliary tweezers of the present invention, the connecting rod is provided with a first anti-rotation seat and a second anti-rotation seat, and the first anti-rotation seat and the second anti-rotation seat are respectively arranged on both sides of the limiting seat, the first anti-rotation seat and the second anti-rotation seat are both snap-fitted and matched with the limiting seat, and the first anti-rotation seat and the second anti-rotation seat are both provided with guide surfaces.
[0028] As a preferred solution of the auxiliary tweezers of the present invention, a pressure sensor is arranged on the outer wall of the fixed tweezers and located at the first through hole, and the pressure sensor corresponds to one end of the spring, and a pressure display screen is arranged on the hand-held rod.
[0029] The beneficial effect of the auxiliary tweezers of the present invention is as follows: by rotating the adjusting piece, the length of the adjusting mechanism between the fixed tweezers and the movable tweezers is changed, and under the action of the spring, the clamping force between the fixed tweezers and the movable tweezers is adjusted, thereby avoiding the situation in which the clamping force is too large and causes the substrate to be broken during pickling, or the clamping force is too small and causes the substrate to fall during the pickling process. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.
[0031] Figure 1 It is a schematic diagram of the structure of the heterogeneous nodule battery of the present invention.
[0032] Figure 2 This is the energy band distribution diagram of PIN-type gradient component heterogeneous nodule battery.
[0033] Figure 3 Schematic diagram of the overall structure of the auxiliary forceps.
[0034] Figure 4 Schematic diagram of the clamping mechanism structure of the auxiliary tweezers.
[0035] Figure 5Schematic diagram of the exploded structure of the adjustment mechanism of the auxiliary tweezers.
[0036] Figure 6 Schematic diagram of the baffle structure of the auxiliary tweezers. DETAILED DESCRIPTION
[0037] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.
[0038] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0039] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.
[0040] Embodiment 1 is the first embodiment of the present invention. This embodiment provides a method for preparing a heterogeneous nodule battery, which includes vacuum treatment: preparing a substrate, selecting a gallium arsenide substrate 400, using auxiliary tweezers to clamp and pickle, using a pickling method to perform surface treatment, using a mixed acid of concentrated sulfuric acid and hydrogen peroxide (mixed in a ratio of 1:1), pickling at 80°C for 10 minutes, ensuring that there are no impurities and oxides on the substrate surface, and ensuring that the surface of the gallium arsenide substrate 400 is clean and flat,
[0041] The GaAs substrate 400 is placed in the MBE system and heated to 10 -7 torr, annealing treatment is performed for 48 hours to remove surface impurities and oxides;
[0042] Heating source loading: loading metal aluminum, gallium and arsenide sources into the heating chamber of the MBE system. According to the required aluminum ratio of aluminum-gallium-arsenic, metal aluminum, gallium and arsenic compound source materials are loaded into the heating source of the MBE system in proportion. In this embodiment, the temperature is controlled at about 700°C.
[0043] Vacuum extraction: Turn on the vacuum pump and pump the system to a high vacuum state, ensuring that the pressure in the system is within 10 -8 ~10 - 9 torr to ensure the stability of the experimental environment. In this embodiment, the pressure in the system is 10 -8 torr;
[0044] Preheat the heating source to 500°C for 1 hour to gradually convert the source material into a vapor state;
[0045] Growth: starting or controlling a molecular beam at an open hole near the surface of the gallium arsenide substrate 400 to deposit aluminum, gallium, and arsenic atoms on the gallium arsenide substrate 400 to form an aluminum gallium arsenic thin film;
[0046] For the P-type AlGaAs layer 101, the flux of aluminum atoms is 9.4·10 14 / second, and the flow rate of gallium atoms is 6·10 13 / second, the flow rate of arsenic atoms is 1015 / second;
[0047] For the I-type AlGaAs layer 102, the flux of aluminum atoms is 7.4·10 14 / second, and the flux of gallium atoms is 2.6·10 14 / second, the flow rate of arsenic atoms is 1015 / second;
[0048] For the N-type AlGaAs layer 103, the flux of aluminum atoms is 5·10 14 / second, the flow rate of gallium atoms is 5·10 13 / second, the flow rate of arsenic atoms is 10 15 pcs / sec;
[0049] Ensure that the doping concentration of the P-type AlGaAs layer 101 is 3.1×10 18 cm -3 , the aluminum ratio is 0.94, the thickness is 0.17μm, and the doping concentration of the I-type aluminum gallium arsenide layer 102 is 9.1×10 15 cm -3 , the aluminum ratio is 0.74, the thickness is 1.80μm, and the doping concentration of the N-type aluminum gallium arsenide layer 103 is 3.1×10 18 cm -3 , the aluminum ratio is 0.5 and the thickness is 0.10μm.
[0050] Cooling: After the growth is completed, gradually reduce the temperature of the source, stop the molecular beam, and allow the system to cool to room temperature;
[0051] Preparation of graphene electrode: 1 mg / mL graphene aqueous solution is filtered and vacuum dried to obtain graphene film; then the graphene film is cut into thin sheets and packaged into graphene electrode sheets with tape;
[0052] Assembly: Ti 3 T 2 Radiation source 300, heterojunction 100, gallium arsenide substrate 400, graphene electrodes and wires are assembled.
[0053] Embodiment 2: This embodiment is different from Embodiment 1 in that the doping concentration of the P-type AlGaAs layer 101 is adjusted to 1·10 18 cm -3 The rest of the preparation process is the same as that in Example 1 to obtain a nuclear battery.
[0054] Embodiment 3: This embodiment is different from Embodiment 1 in that the doping concentration of the I-type AlGaAs layer 102 is adjusted to 5·10 15 cm -3 The rest of the preparation process is the same as that in Example 1 to obtain a nuclear battery.
[0055] Embodiment 4: This embodiment differs from Embodiment 1 in that the doping concentration of the N-type AlGaAs layer 103 is adjusted to 2·10 18 cm -3 The rest of the preparation process is the same as that in Example 1 to obtain a nuclear battery.
[0056] The performance of the material prepared in the above embodiment was tested, and the comparison results with those in Example 1 are shown in Table 1.
[0057] Table 1
[0058] Short circuit current density Open circuit voltage Output power density Example 1 <![CDATA[0.270μA / cm 2 ]]> 1.08V <![CDATA[0.292μW / cm 2 ]]> Example 2 0.251μA / cm2 1.08V 0.271μW / cm2 Example 3 0.241μA / cm2 1.06V 0.255μW / cm2 Example 4 0.229μA / cm2 1.08V 0.247μW / cm2
[0059] It can be seen from the above table that adjusting the doping concentration of each layer has a significant effect on the performance of the nuclear battery. This is due to the change in the energy band structure. According to the results in the above table, the doping concentration in the present invention is 3.1×10 18 cm -3 , I layer 9.1×10 15 cm -3 , 3.1×10 for N layers 18 cm -3 The best technical effect can be obtained (the P layer represents the P-type AlGaAs layer 101, the I layer represents the I-type AlGaAs layer 102, and the N layer represents the N-type AlGaAs layer 103).
[0060] Example 5: This example differs from Example 1 in that the thickness of the P layer is adjusted to 0.16 μm, and the rest of the preparation process is the same as that of Example 1 to obtain a nuclear battery.
[0061] Example 6: This example differs from Example 1 in that the thickness of layer I is adjusted to 1.9 μm, and the rest of the preparation process is the same as that of Example 1 to obtain a nuclear battery.
[0062] Example 7: This example differs from Example 1 in that the thickness of the N layer is adjusted to 0.05 μm, and the rest of the preparation process is the same as that of Example 1 to obtain a nuclear battery.
[0063] The performance of the material prepared in the above embodiment was tested, and the comparison results with those in Example 1 are shown in Table 2.
[0064] Table 2
[0065] Short circuit current density Open circuit voltage Output power density Example 1 <![CDATA[0.270μA / cm 2 ]]> 1.08V <![CDATA[0.292μW / cm 2 ]]> Example 5 <![CDATA[0.244μA / cm 2 ]]> 1.08V <![CDATA[0.264μW / cm 2 ]]> Example 6 <![CDATA[0.237μA / cm 2 ]]> 1.08V <![CDATA[0.256μW / cm 2 ]]> Example 7 <![CDATA[0.242μA / cm 2 ]]> 1.08V <![CDATA[0.261μW / cm 2 ]]>
[0066] It can be seen from the above table that adjusting the thickness of each layer has a significant impact on the performance of the nuclear battery. This is due to changes in the collection of carriers. According to the results in the above table, the best technical effect can be obtained when the thickness of each layer in the present invention is 0.17μm for the P layer, 1.8μm for the I layer, and 0.1μm for the N layer.
[0067] Example 8: This example differs from Example 1 in that the aluminum ratio of the P layer is adjusted to 0.8, and the rest of the preparation process is the same as that of Example 1 to obtain a nuclear battery.
[0068] Example 9. The difference between this example and Example 1 is that the proportion of aluminum in layer I is adjusted to 0.6, and the rest of the preparation process is the same as that in Example 1 to obtain a nuclear battery.
[0069] Example 10: This example is different from Example 1 in that the proportion of aluminum in the N layer is adjusted to 0.46, and the rest of the preparation process is the same as that in Example 1 to obtain a nuclear battery.
[0070] Table 3
[0071] Short circuit current density Open circuit voltage Output power density Example 1 <![CDATA[0.270μA / cm 2 ]]> 1.08V <![CDATA[0.292μW / cm 2 ]]> Example 8 <![CDATA[0.233μA / cm 2 ]]> 1.06V <![CDATA[0.247μW / cm 2 ]]> Example 9 <![CDATA[0.244μA / cm 2 ]]> 1.03V <![CDATA[0.252μW / cm 2 ]]> Example 10 <![CDATA[0.228μA / cm 2 ]]> 1.08V <![CDATA[0.246μW / cm 2 ]]>
[0072] It can be seen from the above table that adjusting the aluminum ratio has a significant impact on the performance of the nuclear battery. This is due to the change in the band structure. According to the results in the above table, the best technical effect can be obtained when the aluminum ratio of each layer in the present invention is.
[0073] Comparative Example 1
[0074] This comparative example provides a nuclear battery using gallium arsenide as a transducer device, specifically: a homogeneous PIN junction is used, except that aluminum atoms are not deposited in the growth step, the rest is the same as Example 1.
[0075] Comparative Example 2
[0076] This comparative example provides a nuclear battery using AlGaAs as a transducer device, specifically: a heterogeneous PN junction is used, except that there is no I layer, and the thickness of the P layer and the thickness of the I layer are both 1 μm, and the rest is the same as Example 1.
[0077] The performance of the material obtained in the above comparative example was tested, and the comparison results with those of Example 1 are shown in Table 4.
[0078] Table 4
[0079] Short circuit current density Open circuit voltage Output power density Example 1 <![CDATA[0.270μA / cm 2 ]]> 1.08V <![CDATA[0.292μW / cm 2 ]]> Comparative Example 1 <![CDATA[0.203μA / cm 2 ]]> 0.93V <![CDATA[0.189μW / cm 2 ]]> Comparative Example 2 <![CDATA[0.218μA / cm 2 ]]> 1.01V <![CDATA[0.220μW / cm 2 ]]>
[0080] It can be seen from the above table that due to the large band gap width and built-in electric field of AlGaAs compared with GaAs, when other conditions are the same, the electrical performance of the nuclear battery with AlGaAs as the energy conversion device is relatively excellent. The PIN junction has greater advantages than the PN junction. The nuclear battery introduced in Example 1 has the best technical effect.
[0081] Example 11, reference Figure 1 to Figure 2 , which is the eleventh embodiment of the present invention. Different from the previous embodiment, this embodiment provides a heterojunction nuclear battery, which solves the problem that the current nuclear battery has a self-absorption effect that leads to waste of radiation sources, excessive radiation damage, and insufficient electrical performance. It includes a heterojunction 100, which includes a P-type aluminum gallium arsenide layer 101, an I-type aluminum gallium arsenide layer 102, and an N-type aluminum gallium arsenide layer 103. The I-type aluminum gallium arsenide layer 102 is arranged between the P-type aluminum gallium arsenide layer 101 and the N-type aluminum gallium arsenide layer 103;
[0082] A positive graphene electrode 200 is disposed on the side of the P-type AlGaAs layer 101 away from the I-type AlGaAs layer 102, and a Ti electrode is disposed on the side of the positive graphene electrode 200 away from the P-type AlGaAs layer 101. 3 T 2 Radioactive source 300;
[0083] A gallium arsenide substrate 400 is disposed on a side of the N-type AlGaAs layer 103 away from the I-type AlGaAs layer 102 , and a negative graphene electrode 500 is disposed on a side of the GaAs substrate 400 away from the I-type AlGaAs layer 102 .
[0084] The positive graphene electrode 200 and the negative graphene electrode 500 are electrically connected, and a load resistor 600 is provided between the positive graphene electrode 200 and the negative graphene electrode 500 .
[0085] To get Ti 3 T 2 The optimal electrical performance of the heterojunction battery of the carrier transport layer is determined and the optimal parameters of the energy conversion device of the nuclear battery are determined. The electrical performance of the nuclear battery with different structural parameters is determined by the experiments in Examples 1-10. The structural parameters when the electrical performance is the largest are the optimal structural parameters. The optimized P layer doping concentration is 3.1×10 18 cm -3 , the aluminum ratio is 0.94, the thickness is 0.17μm; the doping concentration of the I layer is 9.1×10 15 cm -3 , the aluminum ratio is 0.74, the thickness is 1.80μm; the N layer doping concentration is 3.1×10 18 cm -3 , aluminum ratio is 0.5, thickness is 0.10μm. The electrical performance obtained: short-circuit current density is about 0.270μA / cm2 , the open circuit voltage is 1.08V, and the output power density is about 0.292μW / cm 2 .
[0086] Example 12, reference Figures 3 to 6 , which is the twelfth embodiment of the present invention. Different from the previous embodiment, it includes a clamping mechanism 700, which includes a hand-held rod 701, and also includes a fixed tweezers 702 arranged on the hand-held rod 701, and a movable tweezers 703 rotatably installed on the fixed tweezers 702, the movable tweezers 703 is provided with a pressing plate 704, the movable tweezers 703 is provided with a strip groove 703a, and the fixed tweezers 702 is provided with a first through hole 702a, an adjustment mechanism 800, which includes an adjustment component 801 arranged on the fixed tweezers 702 and the movable tweezers 703, and a spring 802 sleeved on the adjustment component 801, the adjustment component 801 includes an adjustment member 801a arranged on the fixed tweezers 702, and a tensioning member 801b movably installed in the strip groove 703a and connected to the adjustment member 801a.
[0087] In this embodiment, the fixed tweezers 702 is in the shape of a "7", which includes a fixed section and a clamping section. The hand-held rod 701 is fixedly installed at the middle end of the "one" part of the tweezers 702. A rotating ear is provided at one end of the fixed section of the fixed tweezers 702 away from the clamping section. The movable tweezers 703 and the pressing plate 704 are integrally formed, and the intersection of the movable tweezers 703 and the pressing plate 704 is rotatably installed through a rotating shaft and the rotating ear on the fixed tweezers 702. The fixed tweezers 702 and the movable tweezers 703 are both provided with vertical sections. The vertical sections and the fixed sections are perpendicular to each other in order to install the adjustment mechanism 800. The spring 802 is sleeved on the adjustment member 801a, and then the adjustment member 801a is inserted into the first Through the through hole 702a, the spring 802 contacts the outer wall of the fixed tweezers 702, thereby exerting a pushing force on the adjusting member 801a in the direction away from the movable tweezers 703. The tensioning member 801b passes through the strip groove 703a and is threadedly connected to the adjusting member 801a. The adjusting member 801a is threadedly rotated to adjust the total length of the adjusting component 801. When the length of the adjusting component 801 becomes longer, the clamping force on the spring 802 becomes smaller, that is, the force of the spring 802 pushing the adjusting member 801a becomes smaller, thereby reducing the clamping force of the movable tweezers 703 to move closer to the fixed tweezers 702. Based on the same principle, when the length of the adjusting component 801 becomes shorter, the clamping force between the movable tweezers 703 and the fixed tweezers 702 becomes larger.
[0088] The adjusting member 801a includes an adjusting rod 801a-1 movably installed in the first through hole 702a, and also includes a stopper 801a-2 set at one end of the adjusting rod 801a-1, and a threaded cavity 801a-3 opened at the end of the adjusting rod 801a-1 away from the stopper 801a-2. The tensioning member 801b includes a threaded rod 801b-1 threadably matched with the threaded cavity 801a-3, and also includes a connecting rod 801b-2 set at the end of the threaded rod 801b-1 away from the adjusting rod 801a-1, and a baffle 801b-3 rotatably installed at the end of the connecting rod 801b-2 away from the threaded rod 801b-1.
[0089] The connecting rod 801b - 2 is cylindrical, and the diameter of the connecting rod 801b - 2 matches the width of the strip groove 703a. Pad strips 801b - 4 are provided at both ends of one side of the baffle 801b - 3 close to the side wall of the movable tweezers 703 .
[0090] A limiting seat 702b is provided at one end of the fixed tweezers 702 close to the movable tweezers 703, and a second through hole 702b-1 is opened on the limiting seat 702b. The second through hole 702b-1 and the connecting rod 801b-2 are movably matched.
[0091] In this embodiment, the adjusting rod 801a-1 and the first through hole 702a are movably plugged into each other, the spring 802 is sleeved on the outside of the circumference of the adjusting rod 801a-1, and the two ends of the spring 802 respectively abut against the block 801a-2 and the fixed tweezers 702, the threaded rod 801b-1 and the connecting rod 801b-2 pass through the strip groove 703a and extend between the fixed tweezers 702 and the movable tweezers 703, and the baffle 801b-3 rotatably connected to the connecting rod 801b-2 fits the vertical section of the movable tweezers 703, so that the adjusting component 801 can pull the movable tweezers 703 toward the fixed tweezers 702 when adjusting.
[0092] Specifically, the baffle 801b-3 and the connecting rod 801b-2 are connected by rotation. When the pressing plate 704 is held tightly to rotate the movable tweezer 703 away from the fixed tweezer 702, the baffle 801b-3 can rotate along with the surface of the vertical section of the movable tweezer 703. If the baffle 801b-3 and the connecting rod 801b-2 are fixedly connected in a T shape, when the movable tweezer 703 rotates to lift the baffle 801b-3, the force point is concentrated on the baffle 801b- 3, the force at this point will be divided into an upward pulling force and a pushing force toward the hand-held rod 701, thereby increasing the friction of the adjustment component 801 sliding in the first through hole 702a and the second through hole 702b-1, which makes it more difficult to unfold the tweezers. The baffle 801b-3 has pads 801b-4 on both sides, so that the friction between the baffle 801b-3 and the movable tweezers 703 is linear friction, thereby reducing the friction and making it easier to unfold the tweezers.
[0093] Furthermore, the adjustment component 801 passes through the second through hole 702b-1 on the limit seat 702b and the first through hole 702a on the fixed tweezers 702, so that the adjustment component 801 can maintain linear motion when the pressing plate 704 is gripped to unfold the tweezers. If there is no limit seat 702b, the adjustment component 801 will only have a simple limit of the first through hole 702a. When the pressing plate 704 is gripped to unfold the tweezers, the adjustment component 801 is prone to shaking, and the position of the baffle 801b-3 will also be offset after resetting, thereby causing errors in the clamping force of the tweezers after adjustment.
[0094] The connecting rod 801b-2 is provided with a first anti-rotation seat 801b-5 and a second anti-rotation seat 801b-6, and the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 are respectively arranged on both sides of the limiting seat 702b, the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 are both snap-fitted and matched with the limiting seat 702b, and the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 are both provided with a guide surface 801b-7.
[0095] In this embodiment, the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 are both welded to the circumferential side wall of the connecting rod 801b-2. In the initial state, under the action of the spring 802, the fixed tweezers 702 and the movable tweezers 703 are close to each other, and there is no force between the fixed tweezers 702 and the movable tweezers 703. At this time, the first anti-rotation seat 801b-5 and the limiting seat 702b are matched and clamped on both sides, so that the connecting rod 801b-2 cannot rotate, so that when the adjusting rod 801a-1 and the threaded rod 801b-1 are rotated and adjusted, there is no need to manually limit the tensioning member 801b.
[0096] Furthermore, when the tweezers are unfolded, the movable tweezers 703 drives the tensioning piece 801b to move, so that the first anti-rotation seat 801b-5 disengages from the limiting seat 702b. When the first anti-rotation seat 801b-5 disengages from the limiting seat 702b, the second anti-rotation seat 801b-6 enters and matches with the limiting seat 702b, thereby preventing the first anti-rotation seat 801b-5 from rotating and disengaging from the limiting seat 702b when it is reset after disengaging from the limiting seat 702b, causing the trouble of manual adjustment.
[0097] It should be noted that the guide surface 801b-7 provided on the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 can correct the deviation when the first anti-rotation seat 801b-5 and the second anti-rotation seat 801b-6 are separated from the limiting seat 702b and a slight deviation occurs.
[0098] A pressure sensor 900 is disposed on the outer wall of the fixed tweezers 702 and located at the first through hole 702 a , and the pressure sensor 900 corresponds to one end of the spring 802 . A pressure display screen 701 a is disposed on the hand-held rod 701 .
[0099] In this embodiment, the pressure sensor 900 is a sheet-type pressure sensor, a battery is provided inside the hand-held rod 701, the pressure display screen 701a and the pressure sensor 900 are electrically connected, and the pressure display screen 701a and the pressure sensor 900 are both electrically connected to the battery.
[0100] Importantly, it should be noted that the construction and arrangement of the present application shown in a plurality of different exemplary embodiments are only exemplary. Although only a few embodiments are described in detail in this disclosure, it should be readily understood by those who refer to this disclosure that many modifications are possible (e.g., the size, scale, structure, shape and proportion of various elements, and parameter values (e.g., temperature, pressure, etc.), installation arrangement, use of materials, color, directional changes, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in the application. For example, the element shown as integrally formed can be composed of multiple parts or elements, the position of the element can be inverted or otherwise changed, and the nature or number or position of the discrete element can be changed or changed. Therefore, all such modifications are intended to be included in the scope of the present invention. The order or sequence of any process or method steps can be changed or reordered according to alternative embodiments. In the claims, any "device plus function" clause is intended to cover the structure of performing the function described herein, and is not only structurally equivalent but also equivalent structure. Without departing from the scope of the present invention, other replacements, modifications, changes and omissions can be made in the design, operating conditions and arrangement of the exemplary embodiments. Therefore, the invention is not limited to a specific embodiment, but extends to numerous modifications still falling within the scope of the appended claims.
[0101] Additionally, in order to provide a concise description of exemplary embodiments, all features of an actual embodiment (ie, those features that are not relevant to the best mode presently contemplated for carrying out the invention or those that are not relevant to implementing the invention) may not be described.
[0102] It will be appreciated that in the development of any actual implementation, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort may be complex and time-consuming, but will be a routine task of design, fabrication, and production for those of ordinary skill having the benefit of this disclosure without undue experimentation.
[0103] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.
Claims
1. A heterogeneous nodule battery, Features: include, A heterojunction (100), comprising a P-type aluminum gallium arsenide layer (101), an I-type aluminum gallium arsenide layer (102) and an N-type aluminum gallium arsenide layer (103), wherein the I-type aluminum gallium arsenide layer (102) is arranged between the P-type aluminum gallium arsenide layer (101) and the N-type aluminum gallium arsenide layer (103); A positive graphene electrode (200) is provided on a side of the P-type aluminum gallium arsenide layer (101) away from the I-type aluminum gallium arsenide layer (102), and a Ti electrode is provided on a side of the positive graphene electrode (200) away from the P-type aluminum gallium arsenide layer (101). 3 T 2 Radioactive source (300); A gallium arsenide substrate (400) is provided on a side of the N-type aluminum gallium arsenide layer (103) away from the I-type aluminum gallium arsenide layer (102), and a negative graphene electrode (500) is provided on a side of the gallium arsenide substrate (400) away from the I-type aluminum gallium arsenide layer (102).
2. The heterogeneous nodule battery according to claim 1, Features: The positive graphene electrode (200) and the negative graphene electrode (500) are electrically connected, and a load resistor (600) is provided between the positive graphene electrode (200) and the negative graphene electrode (500).
3. The heterogeneous nodule battery according to claim 1 or 2, Features: The doping concentration of the P-type AlGaAs layer (101) is 3.1×10 18 cm -3 , aluminum accounts for 0.94% and the thickness is 0.17μm; The doping concentration of the I-type AlGaAs layer (102) is 9.1×10 15 cm -3 , aluminum accounts for 0.74 and the thickness is 1.80μm; The doping concentration of the N-type AlGaAs layer (103) is 3.1×10 18 cm -3 , the aluminum ratio is 0.5 and the thickness is 0.10μm.
4. A method for preparing a heterogeneous tuberculosis battery, Features: Used for preparing the heterogeneous tuberculosis battery according to any one of claims 1 to 3, comprising: Vacuum treatment: prepare the substrate, select the gallium arsenide substrate (400), use auxiliary tweezers to hold and pickle the gallium arsenide substrate (400), ensure that the surface of the gallium arsenide substrate (400) is clean and flat, put the gallium arsenide substrate (400) into the MBE system, and place it in a vacuum condition of 10 -7 torr, annealing treatment is performed for 48 hours to remove surface impurities and oxides; Heating source loading: loading metal aluminum, gallium and arsenide sources into the heating chamber of the MBE system; Vacuum extraction: Turn on the vacuum pump and pump the system to a high vacuum state, ensuring that the pressure in the system is within 10 -8 ~10 -9 torr to ensure a stable experimental environment; Preheat the heating source to 500°C for 1 hour to gradually convert the source material into a vapor state; Growth: starting or controlling a molecular beam at an open hole near the surface of the gallium arsenide substrate (400) to deposit aluminum, gallium and arsenic atoms on the gallium arsenide substrate (400) to form an aluminum gallium arsenic thin film; Cooling: After the growth is completed, gradually reduce the temperature of the source, stop the molecular beam, and allow the system to cool to room temperature; Preparation of graphene electrode: 1 mg / mL graphene aqueous solution is filtered and vacuum dried to obtain graphene film; then the graphene film is cut into thin sheets and packaged into graphene electrode sheets with tape; Assembly: Ti 3 T 2 A radiation source (300), a heterojunction (100), a gallium arsenide substrate (400), a graphene electrode and a wire assembly.
5. An auxiliary forceps, Features: The method for preparing a heterogeneous nodule battery as claimed in claim 4 comprises: A clamping mechanism (700) comprises a hand-held rod (701), a fixed forceps clamp (702) arranged on the hand-held rod (701), and a movable forceps clamp (703) rotatably mounted on the fixed forceps clamp (702), wherein a pressing plate (704) is arranged on the movable forceps clamp (703); The movable tweezers (703) are provided with a strip groove (703a), and the fixed tweezers (702) are provided with a first through hole (702a); An adjustment mechanism (800), comprising an adjustment component (801) disposed on the fixed forceps (702) and the movable forceps (703), and a spring (802) sleeved on the adjustment component (801); The adjustment component (801) comprises an adjustment member (801a) arranged on the fixed forceps (702), and a tension member (801b) movably installed in the strip groove (703a) and connected to the adjustment member (801a).
6. The auxiliary forceps according to claim 5, Features: The adjusting member (801a) comprises an adjusting rod (801a-1) movably mounted in the first through hole (702a), a stopper (801a-2) arranged at one end of the adjusting rod (801a-1), and a threaded cavity (801a-3) opened at one end of the adjusting rod (801a-1) away from the stopper (801a-2); The tensioning member (801b) comprises a threaded rod (801b-1) threadably matched with the threaded cavity (801a-3), a connecting rod (801b-2) arranged at one end of the threaded rod (801b-1) away from the adjusting rod (801a-1), and a baffle (801b-3) rotatably mounted on one end of the connecting rod (801b-2) away from the threaded rod (801b-1).
7. The auxiliary forceps according to claim 6, Features: The connecting rod (801b-2) is arranged in a cylindrical shape, and the diameter of the connecting rod (801b-2) matches the width of the strip groove (703a); Pad strips (801b-4) are provided at both ends of one side of the baffle (801b-3) close to the side wall of the movable tweezers (703).
8. The auxiliary forceps according to claim 7, Features: A limit seat (702b) is provided at one end of the fixed tweezers (702) close to the movable tweezers (703), and a second through hole (702b-1) is provided on the limit seat (702b); The second via hole (702b-1) and the connecting rod (801b-2) are movably matched.
9. The auxiliary forceps according to claim 8, Features: The connecting rod (801b-2) is provided with a first anti-rotation seat (801b-5) and a second anti-rotation seat (801b-6), and the first anti-rotation seat (801b-5) and the second anti-rotation seat (801b-6) are respectively arranged on both sides of the limiting seat (702b); The first anti-rotation seat (801b-5) and the second anti-rotation seat (801b-6) are both snap-fitted and matched with the limiting seat (702b), and the first anti-rotation seat (801b-5) and the second anti-rotation seat (801b-6) are both provided with guide surfaces (801b-7).
10. The auxiliary forceps according to claim 8 or 9, Features: A pressure sensor (900) is disposed on the outer wall of the fixed tweezer (702) and located at the first through hole (702a), and the pressure sensor (900) corresponds to one end of the spring (802); The hand-held rod (701) is provided with a pressure display screen (701a).