GaN-based compound semiconductor laser element

Abstract

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a GaN-based compound semiconductor laser element. The GaN-based compound semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and an exciton phonon quantum interference layer is arranged between the upper waveguide layer and the upper limiting layer. The lattice constant distribution of the exciton phonon quantum interference layer has curve distribution of a function y = A + B * lnx + x; the forbidden band width distribution of the exciton phonon quantum interference layer has a function y = C + D * sinx / x2 third quadrant curve distribution; the GaN-based compound semiconductor laser element can solve the abrupt change problems of conductivity jump, capacitance sinking and ideal factor jump at a threshold value, reduce the transmission loss of electron holes, improve the carrier injection uniformity and gain uniformity, and improve the optical power of a laser; and the beam quality factor is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a GaN-based compound semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapon, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse. There are mainly solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are major differences between lasers and nitride semiconductor light-emitting diodes: 1) Lasers are generated by stimulated radiation of carriers, the spectral half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of the laser reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0003] Nitride semiconductor lasers have the following problems:

[0004] 1) The optical waveguide has high absorption loss. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy p-type. The ionization rate of p-type doping is low. A large amount of unionized Mg acceptor impurities will lead to increased internal optical losses. In addition, the refractive index of the laser is dispersed. The high-concentration carrier concentration fluctuation affects the refractive index of the active layer. The confinement factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser.

[0005] 2) The morphology of laser light waves can be divided into transverse mode and longitudinal mode. The transverse mode intensity distribution in the cross section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser. If the transverse mode is complex and unstable, the coherence of the output light is poor. The longitudinal mode is a standing wave distribution in the propagation direction of the resonant cavity. If many longitudinal modes are simultaneously emitted or there are inter-mode changes, high temporal coherence cannot be obtained.

[0006] 3) The activation energy of the Mg acceptor of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, the holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in the slope efficiency, an increase in the laser valence band step difference, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. Summary of the invention

[0007] The purpose of the present invention is to provide a GaN-based compound semiconductor laser element with a simple structure and reasonable design in order to solve the above problems.

[0008] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0009] A GaN-based compound semiconductor laser element comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein an exciton-phonon quantum interference layer is provided between the upper waveguide layer and the upper confinement layer; the lattice constant distribution of the exciton-phonon quantum interference layer has a function y=A+B*l nx+x curve distribution, where A and B are arbitrary values; the bandgap width distribution of the exciton-phonon quantum interference layer has a function y=C+D*si nx / x 2 The third quadrant curve distribution, C and D are arbitrary values; the lattice constant of the upper confinement layer ≤ the lattice constant of the exciton-phonon quantum interference layer ≤ the lattice constant of the upper waveguide layer; the bandgap width of the upper waveguide layer ≤ the bandgap width of the exciton-phonon quantum interference layer ≤ the bandgap width of the upper confinement layer.

[0010] Furthermore, the thermal conductivity distribution of the exciton-phonon quantum interference layer has a function y=E+F*x a Curve distribution, where a<0, E and F are arbitrary values; the thermal conductivity of the upper waveguide layer ≤ the thermal conductivity of the exciton-phonon quantum interference layer ≤ the thermal conductivity of the upper confinement layer.

[0011] Furthermore, the thermal expansion coefficient distribution of the exciton-phonon quantum interference layer has a function y=G+H*b xCurve distribution, wherein b<1, G, H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer ≤ the thermal expansion coefficient of the exciton-phonon quantum interference layer ≤ the thermal expansion coefficient of the upper confinement layer.

[0012] Furthermore, the In / C element ratio of the exciton-phonon quantum interference layer has a curve distribution of the function y=J+K*lnx+x, where J and K are arbitrary values; the In / C element ratio of the upper confinement layer ≤ the In / C element ratio of the exciton-phonon quantum interference layer ≤ the In / C element ratio of the upper waveguide layer.

[0013] Furthermore, the In / H element ratio of the exciton-phonon quantum interference layer has a first four-quadrant curve distribution of the function y=L+x-1 / 2x, where L is an arbitrary value; the In / H element ratio of the upper confinement layer ≤ the In / H element ratio of the exciton-phonon quantum interference layer ≤ the In / H element ratio of the upper waveguide layer.

[0014] Furthermore, the In / O element ratio of the exciton-phonon quantum interference layer has a function y=M+N*log c The curve distribution of x, wherein c<1, M and N are arbitrary values; the In / O element ratio of the upper confinement layer ≤ the In / O element ratio of the exciton-phonon quantum interference layer ≤ the In / O element ratio of the upper waveguide layer.

[0015] Furthermore, the lattice constant distribution, bandgap width distribution, thermal conductivity distribution, and thermal expansion coefficient distribution of the exciton-phonon quantum interference layer have the following relationship: A≤E≤G≤C; the In / H element ratio, In / O element ratio, and In / C element ratio of the exciton-phonon quantum interference layer have the following relationship: L≤J≤M; the exciton-phonon quantum interference layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0016] Furthermore, the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1;

[0017] The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 80 angstroms;

[0018] The barrier layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 120 angstroms.

[0019] Further, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0020] Further, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0021] The beneficial effects of the present invention are as follows: the present invention modulates the corresponding symmetry breaking far from the equilibrium state through the exciton-phonon quantum interference layer, so that quantum interference is generated between the acoustic phonons at the boundary of the Brillouin zone and the dark excitons, the Coulomb screening strength is reduced, and the strong coupling effect between the dark excitons and the phonons is generated, so as to solve the sudden change problem of the conductance jump, capacitance sink and ideal factor jump at the threshold; the exciton-phonon quantum interference layer generates a surface plasmon-induced electric field to enhance the interface charge transfer, reduce the transmission loss of electron holes, strengthen the transmission and injection of electrons and holes into the active layer, improve the uniformity of carrier injection and gain uniformity, improve the optical power of the laser, and generate exciton polaritons, so that the strong coupling effect between the excitons of the laser element and the photons of the waveguide layer is greater than the dissipation rate, the photon mode confinement is formed for the laser, a high-purity laser longitudinal wave field is formed, the laser coherence and single-mode output are improved, and the beam quality factor is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic structural diagram of a GaN-based compound semiconductor laser element according to an embodiment of the present invention;

[0023] Figure 2 It is a SIMS secondary ion mass spectrum of a GaN-based compound semiconductor laser element according to an embodiment of the present invention.

[0024] In the figure: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, upper confinement layer; 106, exciton-phonon quantum interference layer. DETAILED DESCRIPTION

[0025] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0026] like Figure 1-Figure 2As shown, a GaN-based compound semiconductor laser element includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein an exciton-phonon quantum interference layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105;

[0027] The exciton-phonon quantum interference layer 106 is a special structure in semiconductor materials, in which the interaction between excitons (electron-hole pairs) and phonons (lattice vibration quanta) can produce quantum interference effects. This interference effect can affect the optical and electronic properties of the material and improve the performance of optoelectronic devices, such as enhancing the gain of a laser or adjusting the transmission characteristics of light.

[0028] The lattice constant distribution of the exciton-phonon quantum interference layer 106 has a function y=A+B*l nx+x curve distribution, where A and B are arbitrary values;

[0029] Among them, the lattice constant, also known as the lattice parameter, is a key quantity that describes the geometric arrangement of atoms, ions or molecules in the crystal lattice.

[0030] The bandgap width distribution of the exciton-phonon quantum interference layer 106 has the function y=C+D*sinx / x 2 The third quadrant curve distribution, C and D are arbitrary values;

[0031] The lattice constant of the upper confinement layer 105 ≤ the lattice constant of the exciton-phonon quantum interference layer 106 ≤ the lattice constant of the upper waveguide layer 104 ; the bandgap width of the upper waveguide layer 104 ≤ the bandgap width of the exciton-phonon quantum interference layer 106 ≤ the bandgap width of the upper confinement layer 105 .

[0032] Among them, the bandgap is the energy gap between the conduction band and the valence band in a semiconductor or insulator, representing the minimum energy required for electrons to jump from the valence band to the conduction band. The larger the bandgap, the lower the conductivity of the material is usually, and vice versa.

[0033] In a specific embodiment, the thermal conductivity distribution of the exciton-phonon quantum interference layer 106 has the function: the lattice constant of the upper confinement layer 105 ≤ the lattice constant of the exciton-phonon quantum interference layer 106 ≤ the lattice constant of the upper waveguide layer 104; the bandgap width of the upper waveguide layer 104 ≤ the bandgap width of the exciton-phonon quantum interference layer 106 ≤ the bandgap width of the upper confinement layer 105;

[0034] Among them, thermal conductivity is the ability of a material to conduct heat, which usually depends on multiple factors, including temperature, material structure, lattice defects, etc. The distribution of thermal conductivity can vary greatly under different materials and different conditions.

[0035] In a specific embodiment, the thermal expansion coefficient distribution of the exciton-phonon quantum interference layer 106 has a function y=G+H*b x , wherein b<1, G and H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer 104 ≤ the thermal expansion coefficient of the exciton-phonon quantum interference layer 106 ≤ the thermal expansion coefficient of the upper confinement layer 105;

[0036] Among them, the thermal expansion coefficient describes the degree of change in volume or length of a material when the temperature changes. It is a quantitative indicator of the thermal expansion phenomenon.

[0037] In a specific implementation manner, the In / C element ratio of the exciton-phonon quantum interference layer 106 has a curve distribution of the function y=J+K*lnx+x, where J and K are arbitrary values; the In / C element ratio of the upper confinement layer 105 ≤ the In / C element ratio of the exciton-phonon quantum interference layer 106 ≤ the In / C element ratio of the upper waveguide layer 104.

[0038] In a specific implementation manner, the In / H element ratio of the exciton-phonon quantum interference layer 106 has a first four-quadrant curve distribution of the function y=L+x-1 / 2x, where L is an arbitrary value; the In / H element ratio of the upper confinement layer 105 ≤ the In / H element ratio of the exciton-phonon quantum interference layer 106 ≤ the In / H element ratio of the upper waveguide layer 104.

[0039] In a specific embodiment, the ratio of In / O elements in the exciton-phonon quantum interference layer 106 has a function y=M+N*log c The curve distribution of x, wherein c<1, M and N are arbitrary values; the In / O element ratio of the upper confinement layer 105 ≤ the In / O element ratio of the exciton-phonon quantum interference layer 106 ≤ the In / O element ratio of the upper waveguide layer 104.

[0040] The lattice constant distribution, bandgap width distribution, thermal conductivity distribution, and thermal expansion coefficient distribution of the exciton-phonon quantum interference layer 106 have the following relationship: A≤E≤G≤C; the In / H element ratio, In / O element ratio, and In / C element ratio of the exciton-phonon quantum interference layer 106 have the following relationship: L≤J≤M.

[0041] In a specific embodiment, the exciton-phonon quantum interference layer 106 is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0042] In a specific implementation, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1;

[0043] The well layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 80 angstroms;

[0044] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness is 10 to 120 angstroms.

[0045] In a specific embodiment, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, AlGaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0046] In a specific embodiment, the substrate 100 includes any one of sapphire, silicon, Ge, SiC, Al N, GaN, GaAs, I nP, I nAs, GaSb, sapphire / SiO2 composite substrate, sapphire / Al N composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0047] In order to highlight the technical advantages of the present technical solution, this embodiment compares the performance of the laser element proposed by the present invention with that of the traditional laser element. The comparison results can be seen in Table 1:

[0048] Table 1

[0049]

[0050]

[0051] According to the data in Table 1, it can be seen that the GaN-based compound semiconductor laser element proposed in the present invention has a beam quality factor of 3.7M compared to the traditional laser. 2 Reduced to 1.6M 2 , the change is 131%. The beam quality factor is usually used to describe the spatial structure and focusing performance of the laser beam. The closer the value is to 1, the higher the quality of the laser beam is, that is, the beam is closer to the ideal Gaussian beam. Therefore, from 3.7M 2 Reduced to 1.6M 2 This means that the quality of the beam is improved, providing greater flexibility and possibilities for the design of optical devices;

[0052] The optical power increased from 4.1W to 6.7W, a change of 63%. The increase in optical power indicates that the output energy of the laser has increased, resulting in a stronger beam, a longer transmission distance or higher processing efficiency.

[0053] The resolution of the focused spot is increased from more than 250nm to less than 20nm, thereby improving the details of the image and data, making it suitable for more precise applications; enhancing the focusing ability of the light beam, facilitating more precise processing and measurement; and improving the imaging quality, making the detection and analysis of tiny structures more effective.

[0054] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A GaN-based compound semiconductor laser element, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, characterized in that: An exciton-phonon quantum interference layer is provided between the upper waveguide layer and the upper confinement layer; the lattice constant distribution of the exciton-phonon quantum interference layer has a function y=A+B*lnx+x curve distribution, where A and B are arbitrary values; the bandgap width distribution of the exciton-phonon quantum interference layer has a function y=C+D*sinx / x 2 The third quadrant curve distribution, C and D are arbitrary values; the lattice constant of the upper confinement layer ≤ the lattice constant of the exciton-phonon quantum interference layer ≤ the lattice constant of the upper waveguide layer; the bandgap width of the upper waveguide layer ≤ the bandgap width of the exciton-phonon quantum interference layer ≤ the bandgap width of the upper confinement layer.

2. A GaN-based compound semiconductor laser element according to claim 1, characterized in that: The thermal conductivity distribution of the exciton-phonon quantum interference layer has the function y=E+F*x a Curve distribution, where a<0, E and F are arbitrary values; the thermal conductivity of the upper waveguide layer ≤ the thermal conductivity of the exciton-phonon quantum interference layer ≤ the thermal conductivity of the upper confinement layer.

3. A GaN-based compound semiconductor laser element according to claim 2, characterized in that: The thermal expansion coefficient distribution of the exciton-phonon quantum interference layer has a function y=G+H*b x Curve distribution, wherein b<1, G, H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer ≤ the thermal expansion coefficient of the exciton-phonon quantum interference layer ≤ the thermal expansion coefficient of the upper confinement layer.

4. A GaN-based compound semiconductor laser element according to claim 3, characterized in that: The In / C element ratio of the exciton-phonon quantum interference layer has a curve distribution of the function y=J+K*lnx+x, where J and K are arbitrary values; the In / C element ratio of the upper confinement layer ≤ the In / C element ratio of the exciton-phonon quantum interference layer ≤ the In / C element ratio of the upper waveguide layer.

5. A GaN-based compound semiconductor laser element according to claim 4, characterized in that: The In / H element ratio of the exciton-phonon quantum interference layer has a first four-quadrant curve distribution of the function y=L+x-1 / 2x, where L is an arbitrary value; the In / H element ratio of the upper confinement layer ≤ the In / H element ratio of the exciton-phonon quantum interference layer ≤ the In / H element ratio of the upper waveguide layer.

6. A GaN-based compound semiconductor laser element according to claim 5, characterized in that: The In / O element ratio of the exciton-phonon quantum interference layer has a function y=M+N*log c The curve distribution of x, wherein c<1, M and N are arbitrary values; the In / O element ratio of the upper confinement layer ≤ the In / O element ratio of the exciton-phonon quantum interference layer ≤ the In / O element ratio of the upper waveguide layer.

7. A GaN-based compound semiconductor laser element according to claim 6, characterized in that: The lattice constant distribution, bandgap width distribution, thermal conductivity distribution, and thermal expansion coefficient distribution of the exciton-phonon quantum interference layer have the following relationship: A≤E≤G≤C; the In / H element ratio, In / O element ratio, and In / C element ratio of the exciton-phonon quantum interference layer have the following relationship: L≤J≤M; the exciton-phonon quantum interference layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

8. The GaN-based compound semiconductor laser device according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1; The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 80 angstroms; The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 120 angstroms.

9. The GaN-based compound semiconductor laser device according to claim 1, characterized in that: The lower limiting layer, lower waveguide layer, upper waveguide layer, and upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. A GaN-based compound semiconductor laser device as claimed in claim 1, characterized in that: The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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