Preparation method of light-emitting device, light-emitting device and electronic equipment comprising light-emitting device

Abstract

The invention discloses a preparation method of a light-emitting device, the light-emitting device and electronic equipment comprising the light-emitting device. The preparation method comprises the following steps: providing a prefabricated device comprising a functional film layer; the functional film layer is subjected to ion irradiation treatment, the material of the functional film layer comprises a first metal oxide, the problem of exciton quenching caused by the fact that excessive current carriers reach the light emitting layer is effectively solved, the current carrier transmission performance of the functional film layer can be properly reduced, electron-hole transmission balance is promoted, and the light emitting efficiency is improved. When the light-emitting device prepared by the preparation method of the light-emitting device is applied to the electronic equipment, the display effect of the electronic equipment can be improved, and the service life of the electronic equipment can be prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a method for preparing a light-emitting device, a light-emitting device, and an electronic device comprising the light-emitting device. Background Art

[0002] A light-emitting device refers to a type of device that emits light through the injection and recombination of carriers, including but not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED). A light-emitting device has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, light-emitting devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings and the device life of light-emitting devices needs to be further improved. Summary of the invention

[0004] The present application provides a method for preparing a light-emitting device, a light-emitting device, and an electronic device including the light-emitting device, so as to improve the device life of the light-emitting device.

[0005] The technical solution of this application is as follows:

[0006] In a first aspect, the present application provides a method for preparing a light-emitting device, comprising the following steps:

[0007] Providing a prefabricated device including a functional film layer; and

[0008] performing ion irradiation treatment on the functional film layer;

[0009] Wherein, the material of the functional film layer includes a first metal oxide.

[0010] Optionally, the prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer stacked in sequence, and after the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a top electrode on a side of the functional film layer away from the light-emitting layer;

[0011] Alternatively, the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, and after the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a light-emitting layer on a side of the functional film layer away from the bottom electrode; and forming a top electrode on a side of the light-emitting layer away from the functional film layer;

[0012] The functional film layer is an electron functional layer or a hole functional layer.

[0013] Optionally, the metal element of the first metal oxide is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals; and / or

[0014] The thickness of the functional film layer is 10nm to 40nm; and / or

[0015] In the ion irradiation treatment, the energy range of the injected ions is 3keV to 5keV, and the injected ion dose is 1×10 8 ions / cm 2 ~1×10 16 ions / cm 2 ; and / or

[0016] The ions used in the ion irradiation treatment are ions generated by ionization of an inert gas. Optionally, the ions used in the ion irradiation treatment are He + ,Ar + 、Ne + , Kr + 、Xe + and N 2+ One or more of; and / or

[0017] The ion irradiation treatment is carried out continuously or intermittently; when the ion irradiation treatment is carried out intermittently, the ion irradiation treatment includes multiple ion irradiation sub-treatments, the time of each ion irradiation sub-treatment in the multiple ion irradiation sub-treatments is 0.01s to 1s, and / or the time interval between two adjacent ion irradiation sub-treatments is 3s to 15s.

[0018] Optionally, the method for preparing the functional film layer comprises the following steps:

[0019] depositing a first solution comprising a first metal oxide; and

[0020] The deposited first solution is dried to obtain a functional film layer.

[0021] Optionally, the functional film layer is an electronic functional layer, and the first metal oxide is selected from doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide and doped or undoped zirconium oxide, wherein, when the first metal oxide is a doped metal oxide, the doped metal element of the first metal oxide is selected from one or more of magnesium, calcium, gallium, lithium, aluminum, titanium, yttrium, indium and tin.

[0022] Optionally, when the prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer stacked in sequence, the prefabricated device further comprises a hole functional layer, and the hole functional layer is arranged between the bottom electrode and the light-emitting layer;

[0023] Alternatively, when the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, after the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a light-emitting layer, a hole functional layer and a top electrode in sequence on a side of the functional film layer away from the bottom electrode;

[0024] The material of the hole functional layer includes poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), 4,4'-bis (9-carbazole) biphenyl, poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline ], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4 ',4'-Tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'- Spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide.

[0025] Optionally, the functional film layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide and doped or undoped copper oxide; when the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0026] Optionally, when the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, the method for preparing the light-emitting device further comprises the steps of: forming a light-emitting layer, an electronic functional layer and a top electrode in sequence on a side of the functional film layer away from the bottom electrode;

[0027] Alternatively, when the prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer which are stacked in sequence, the prefabricated device further comprises a hole functional layer, and the hole functional layer is arranged between the bottom electrode and the light-emitting layer;

[0028] Wherein, the material of the electronic functional layer comprises an organic electronic functional compound. Optionally, the organic electronic functional compound is selected from one or more of 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene), 1,3,5-tri((3-pyridyl)-3-phenyl)benzene, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, tris(8-hydroxyquinoline)aluminum and bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum.

[0029] Optionally, the materials of the bottom electrode and the top electrode are independently selected from one or more of a metal, a carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or

[0030] The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; and / or

[0031] The quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; and / or

[0032] The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS , HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb , InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, In PSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlN The IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; and / or

[0033] The general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or

[0034] The general structural formula of the organic perovskite quantum dots is CMX3, where C is a carboxamidine group; and / or

[0035] The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations.

[0036] In a second aspect, the present application provides a light-emitting device, which is manufactured using any one of the manufacturing methods described in the first aspect.

[0037] In a third aspect, the present application provides an electronic device, comprising a light-emitting device manufactured by the method for manufacturing a light-emitting device as described in any one of the first aspects.

[0038] The present application provides a method for preparing a light-emitting device, a light-emitting device, and an electronic device including the light-emitting device, which have the following technical effects:

[0039] In the preparation method of the light-emitting device, the functional film layer containing the first metal oxide is subjected to ion irradiation treatment to introduce a defect interface into the functional film layer. The defect interface can capture excess carriers (electrons or holes), effectively improve the exciton quenching problem caused by excess carriers reaching the light-emitting layer, and can appropriately reduce the carrier transport performance of the functional film layer, thereby promoting the electron-hole transport balance, thereby improving the photoelectric performance and device life of the light-emitting device, and is conducive to improving the performance stability of the light-emitting device.

[0040] The light-emitting device prepared by the preparation method of the light-emitting device is applied to electronic devices, which is beneficial to improving the display effect and service life of the electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0042] Figure 1 A schematic diagram of a process for preparing a light-emitting device provided in an embodiment of the present application;

[0043] Figure 2 A schematic diagram of the structure of a first light-emitting device provided in an embodiment of the present application;

[0044] Figure 3A schematic diagram of the structure of a second light-emitting device provided in an embodiment of the present application;

[0045] Figure 4 A schematic diagram of the structure of a third light-emitting device provided in an embodiment of the present application;

[0046] Figure 5 is a current density-voltage characteristic curve diagram of the light emitting devices in Example 1, Example 2 and Comparative Example 1;

[0047] Figure 6 is a current efficiency-current density characteristic curve diagram of the light emitting devices in Example 1, Example 2 and Comparative Example 1;

[0048] Figure 7 is a current density-voltage characteristic curve diagram of the light emitting device in Example 6 and Comparative Example 2;

[0049] Figure 8 It is a current efficiency-current density characteristic curve diagram of the light-emitting devices in Example 6 and Comparative Example 2.

[0050] The reference numerals are as follows:

[0051] 1: light-emitting device, 10: substrate, 11: anode, 12: cathode, 13: light-emitting layer, 14: electron functional layer, 15: hole functional layer, 151: hole injection layer, 152: hole transport layer. DETAILED DESCRIPTION

[0052] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0053] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0054] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0055] In the description of the present application, the term “including” means “including but not limited to”.

[0056] The term "at least one" means one or more, and "multiple" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or plural, respectively.

[0057] In the present application, the description of "layer A is formed on one side of layer B" or "layer A is formed on the side of layer B away from layer C" may mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B; it may also mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other film layers may be formed between layer A and layer B.

[0058] The selection scope of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the said any and all combinations include any combination of two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions of A, B and A+B. For another example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the combination of four items of A, B, C, and D (that is, the technical solution connected by "logical and").

[0059] The present application provides a method for preparing a light emitting device, such as Figure 1 As shown, the method for preparing the light emitting device comprises the following steps:

[0060] S1. providing a prefabricated device including a functional film layer;

[0061] S2. Perform ion irradiation treatment on the functional film layer.

[0062] Wherein, the material of the functional film layer comprises a first metal oxide. In the embodiment of the present application, "ion irradiation" refers to a treatment method in which high-energy ions are used to knock atoms in the first metal oxide away from their normal positions, thereby generating crystal defects such as vacancies and interstitial atoms. During the ion irradiation treatment process, the high-energy ions will have Coulomb electromagnetic interactions with the atoms in the first metal oxide, and based on the electron energy loss and nuclear energy loss, the irradiated ions will gradually slow down and eventually stay or penetrate the first metal oxide. It is understandable that the ions used in the ion irradiation treatment can enter and stay in the lattice of the first metal oxide, thereby introducing defect states such as point defects and defect clusters, causing lattice distortion at the interface of the functional film layer, destroying the lattice symmetry, and causing the problem of band bending, and the interface with lattice distortion will introduce additional interface barriers, therefore, a large number of defects caused by disordered atoms and incomplete chemical bonds in the distorted lattice will capture carriers, making them difficult to move, thereby reducing the number of free carriers that can participate in carrier transport.

[0063] It should be noted that existing light-emitting devices have the problem of unbalanced carrier transport, such as the electron injection level is much greater than the hole injection level, or the hole injection level is much greater than the electron injection level. For example, the existing QLED has the problem that the electron injection level is much greater than the hole injection level, which leads to a negative impact on the photoelectric performance and device life of the light-emitting device. In the preparation method of the light-emitting device of the embodiment of the present application, the functional film layer containing the first metal oxide is ion irradiated to introduce a defective interface into the functional film layer, thereby reducing the carrier transport performance of the functional film layer, effectively improving the phenomenon of excessive carriers (electrons or holes) injected into the light-emitting layer, reducing the "exciton quenching" effect, and promoting the electron-hole transport balance, thereby improving the photoelectric performance and device life of the light-emitting device. In addition, compared with neutron irradiation treatment of the functional film layer, ion irradiation treatment of the functional film layer is more conducive to improving the comprehensive performance of the light-emitting device, and it is easier to control the treatment depth and reduce the preparation cost of the light-emitting device.

[0064] In step S1, the "prefabricated device" refers to a laminated structure in which one or more film layers have been prepared, and the next step is to perform ion irradiation treatment on the functional film layers. The first metal oxide may be doped or undoped, and the metal element of the first metal oxide is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals, and transition metals.

[0065] In some embodiments of the present application, the prefabricated device includes a bottom electrode, a light-emitting layer and the functional film layer stacked in sequence, and after step S2, the method for preparing the light-emitting device further includes the steps of: forming a top electrode on the side of the functional film layer away from the light-emitting layer; or, the prefabricated device includes a bottom electrode and a functional film layer stacked in sequence, and after step S2, the method for preparing the light-emitting device further includes the steps of: forming a light-emitting layer on the side of the functional film layer away from the bottom electrode; and forming a top electrode on the side of the light-emitting layer away from the functional film layer. Wherein, the functional film layer is an electron functional layer or a hole functional layer; one of the bottom electrode and the top electrode is an anode, and the other is a cathode.

[0066] In some embodiments of the present application, the first metal oxide is in the form of nanoparticles, and the average particle size of the first metal oxide is 2nm to 40nm, for example, it can be 2nm, 5nm, 10nm, 20nm, 30nm, 40nm, and a value between any two of the aforementioned values.

[0067] In order to improve the comprehensive performance of the light-emitting device and reduce the preparation cost of the light-emitting device, in some embodiments of the present application, the thickness of the functional film layer is 10nm to 40nm, for example, 10nm, 20nm, 30nm, 40nm and values ​​between any two of the aforementioned values.

[0068] In step S2, the ions used in the ion irradiation treatment are ions generated by ionization of an inert gas, for example, He + ,Ar + 、Ne + , Kr + 、Xe + and N 2+ The ion irradiation treatment may be performed continuously or intermittently. In some embodiments of the present application, the ion irradiation treatment is performed intermittently, and the ion irradiation treatment includes a plurality of ion irradiation sub-treatments, and the time of each ion irradiation sub-treatment in the plurality of ion irradiation sub-treatments is 0.01s to 1s, and / or the time interval between two adjacent ion irradiation sub-treatments is 3s to 15s.

[0069] In order to further promote the electron-hole transport balance of the light-emitting device, in some embodiments of the present application, in step S2, the energy range of the injected ions is 3keV to 5keV, for example, 3keV, 3.5keV, 4keV, 4.5keV, 5keV and a value between any two of the foregoing values, and the injected ion dose is 1×10 8 ions / cm 2 ~1×10 16 ions / cm 2 , for example, 1×10 8 ions / cm 2 , 1×10 9 ions / cm 2 , 1×10 10 ions / cm 2 , 1×10 11 ions / cm 2 , 1×10 12 ions / cm 2 , 1×10 13 ions / cm 2 , 1×10 14 ions / cm 2 , 1×10 15 ions / cm 2 , 1×10 16 ions / cm 2 and values ​​between any two of the preceding values.

[0070] In some embodiments of the present application, the method for preparing the functional film layer comprises the following steps:

[0071] S11, depositing a first solution containing a first metal oxide;

[0072] S12, drying the deposited first solution to obtain a functional film layer.

[0073] In step S11, the solvent of the first solution includes but is not limited to one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds, wherein the alkanes include but are not limited to one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, the aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, the halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, the alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, the ether compounds include but are not limited to ethylene glycol monomethyl ether, the furan compounds include but are not limited to tetrahydrofuran, the pyridine compounds include but are not limited to pyridine, the amide compounds include but are not limited to N,N-dimethylformamide, and the solvent of the first solution is ethanol. The concentration of the first metal oxide in the first solution is, for example, 10 mg / mL to 50 mg / mL.

[0074] In step S11, the deposition method of the first solution includes but is not limited to one or more of spin coating, printing, inkjet printing, doctor blading, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, strip coating and solution electrodeposition.

[0075] In step S12, "drying treatment" includes all processes that can make the deposited first solution obtain higher energy and transform into a solidified film layer, including but not limited to heating treatment or vacuum drying treatment, wherein the temperature of the heating treatment can be constant temperature or non-constant temperature (for example, the temperature changes in a gradient). As an example, the drying treatment is a heating treatment, and the temperature of the heating treatment is 60°C to 200°C.

[0076] When the drying method is vacuum drying, in order to improve the quality of the functional film layer, in some embodiments of the present application, after the step of drying the deposited first solution and before the step of obtaining the functional film layer, the method for preparing the functional film layer further includes the step of: performing a controllable depth annealing treatment on the solidified film layer formed by the drying treatment, and the controllable depth annealing treatment includes but is not limited to one or more of atomic annealing treatment, electron beam annealing treatment and infrared radiation treatment.

[0077] When the light-emitting device has the problem that the electron injection level is much greater than the hole injection level, the functional film layer is an electronic functional layer, and the first metal oxide includes but is not limited to doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide and doped or undoped zirconium oxide, wherein, when the first metal oxide is a doped metal oxide, the doped metal element of the first metal oxide is selected from one or more of magnesium, calcium, gallium, lithium, aluminum, titanium, yttrium, indium and tin. It can be understood that the main metal element and the doped metal element in the first metal oxide are not the same, and the content of the main metal element is greater than the content of the doped metal element. Examples of undoped first metal oxides are one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and examples of doped first metal oxides are Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x<1.

[0078] Furthermore, when the light-emitting device is a positive structure, the prefabricated device further includes a bottom electrode and a light-emitting layer, and the functional film layer (electronic functional layer) is located on the side of the light-emitting layer away from the bottom electrode. After step S2, the method for preparing the light-emitting device further includes the step of forming a top electrode on the side of the functional film layer away from the light-emitting layer, the bottom electrode is an anode and the top electrode is a cathode. In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, the prefabricated device further includes a hole functional layer, and the hole functional layer is arranged between the bottom electrode and the light-emitting layer.

[0079] Alternatively, when the light-emitting device is an inverted structure, the prefabricated device further includes a bottom electrode. After step S2, the method for preparing the light-emitting device further includes the steps of: forming a light-emitting layer on the side of the functional film layer away from the bottom electrode; and forming a top electrode on the side of the light-emitting layer away from the functional film layer, wherein the bottom electrode is an anode and the top electrode is a cathode. In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, after the step of forming the light-emitting layer and before the step of forming the top electrode on the side of the light-emitting layer away from the functional film layer, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on the side of the light-emitting layer away from the functional film layer; and forming the top electrode on the side of the hole functional layer away from the light-emitting layer.

[0080] Wherein, the hole functional layer is a single layer structure or a multilayer structure, and the hole functional layer includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer, and the thickness of the hole functional layer is 10 nm to 200 nm. The material of the hole functional layer includes, but is not limited to, poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline ], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4 ',4'-Tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'- Spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide.Among them, transition metal sulfides include but are not limited to one or more of molybdenum sulfide, tungsten sulfide and copper sulfide; transition metal selenides include but are not limited to one or more of molybdenum selenide and tungsten selenide; doped or undoped nickel oxide is exemplified by NiO, doped or undoped molybdenum oxide is exemplified by MoO3, doped or undoped tungsten oxide is exemplified by WO3, doped or undoped vanadium oxide is exemplified by V2O5, doped or undoped chromium oxide is exemplified by CrO3, doped or undoped copper oxide is exemplified by one or more of CuO and Cu2O, wherein the doping elements are but are not limited to one or more of carbon, nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0081] When the light-emitting device has the problem that the hole injection level is much greater than the electron injection level, the functional film layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide, and doped or undoped copper oxide. Wherein, when the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements. It can be understood that the main metal element and the doping metal element in the first metal oxide are different, and the content of the main metal element is greater than the content of the doping metal element.

[0082] Furthermore, when the light-emitting device is a positive structure, the prefabricated device further includes a bottom electrode, and the functional film layer is located on one side of the bottom electrode. After step S2, the method for preparing the light-emitting device further includes the steps of: forming a light-emitting layer on the side of the functional film layer away from the bottom electrode; and forming a top electrode on the side of the light-emitting layer away from the functional film layer, wherein the bottom electrode is an anode and the top electrode is a cathode. In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, after the step of forming the light-emitting layer and before the step of forming the top electrode, the method for preparing the light-emitting device further includes the steps of: forming an electronic functional layer on the side of the light-emitting layer away from the functional film layer; and forming the top electrode on the side of the electronic functional layer away from the light-emitting layer.

[0083] Alternatively, when the light-emitting device is an inverted structure, the prefabricated device further includes a bottom electrode and a light-emitting layer, and the functional film layer is located on a side of the light-emitting layer away from the bottom electrode. After step S2, the method for preparing the light-emitting device further includes the step of forming a top electrode on a side of the functional film layer away from the light-emitting layer, wherein the bottom electrode is a cathode and the top electrode is an anode. In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, the prefabricated device further includes an electronic functional layer, which is disposed between the bottom electrode and the light-emitting layer.

[0084] Wherein, the electronic functional layer is a single-layer structure or a multi-layer structure, and the electronic functional layer includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer, and the thickness of the electronic functional layer is 10 nm to 200 nm. The material of the electronic functional layer includes an organic electronic functional compound, and the organic electronic functional compound is selected from, for example, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole (PBD for short, CAS No. 15082-28-7), 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene) (TPBi for short, CAS No. 192198-85-9), 1,3,5-tri((3-pyridyl)-3-phenyl)benzene (TmPyPb for short, CAS No. 921205-03-0), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP for short, One or more of 4,7-diphenyl-1,10-phenanthroline (Bphen, CAS No. 1662-01-7), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ, CAS No. 150405-69-9), tris(8-hydroxyquinoline)aluminum (Alq3, CAS No. 2085-33-8) and bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum (Balq, CAS No. 146162-54-1).

[0085] It should be noted that, in addition to the functional film layer, the preparation methods of other film layers in the light-emitting device are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and coprecipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of the solution method includes but is not limited to spin coating, printing, inkjet printing, scraping, printing, dip pulling, immersion, spraying, rolling, casting, slit coating and strip coating. After the preparation of each film layer of the light-emitting device is completed, a packaging process is required. The packaging process can be carried out by commonly used machine packaging or manual packaging. In the packaging process environment, the oxygen content and water content are both lower than 0.1ppm to ensure the stability of the light-emitting device.

[0086] The present application also provides a light-emitting device. The light-emitting device can be manufactured by any of the above-mentioned methods for manufacturing a light-emitting device. For example, Figure 2As shown, the light emitting device 1 includes an anode 11, a cathode 12, a light emitting layer 13, an electron functional layer 14 and a hole functional layer 15, wherein the anode 11 and the cathode 12 are arranged opposite to each other, the light emitting layer 13 is arranged between the anode 11 and the cathode 12, the electron functional layer 14 is arranged between the cathode 12 and the light emitting layer 13, and the hole functional layer 15 is arranged between the anode 11 and the light emitting layer 13. The electron functional layer 14 and the hole functional layer 15 are described above.

[0087] In some embodiments of the present application, the materials of the anode 11 and the cathode 12 are independently selected from one or more of metals, carbon materials and second metal oxides, wherein the metals include but are not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, the carbon materials include but are not limited to one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxides include but are not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), SnO2, ZnO and In2O3. The anode 11 or the cathode 12 may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and lower layers are respectively doped or undoped transparent metal oxides, and the material of the middle layer is a metal, for example, it may be one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2, and the thickness of the middle layer does not exceed 35nm. The thickness of the anode 11 may be, for example, 20nm to 300nm, and the thickness of the cathode 12 may be, for example, 20nm to 300nm.

[0088] The light emitting layer 13 is a single layer structure or a multilayer structure. The light emitting layer 13 may be two or more layers. The thickness of the light emitting layer 13 may be 10 nm to 100 nm. In some embodiments of the present application, the material of the light emitting layer 13 includes one or more organic light emitting materials and quantum dots.

[0089] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials. One or more.

[0090] Quantum dots include but are not limited to one or more of red quantum dots, green quantum dots and blue quantum dots, and quantum dots include but are not limited to one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be, for example, 5nm to 10nm, and the average particle size of the quantum dots is exemplified as 5nm, 6nm, 7nm, 8nm, 9nm or 10nm.

[0091] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0092] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0093] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0094] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0095] It is understood that when the material of the light-emitting layer 13 includes quantum dots, the material of the light-emitting layer 13 also includes ligands connected to the surface of the quantum dots, and the ligands include but are not limited to at least one of amine ligands, carboxylic acid ligands, thiol ligands, (oxy)phosphine ligands, phospholipids, phospholipids or polyvinyl pyridine, and the amine ligands are selected from one or more of methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine and trioctylamine. The carboxylic acid ligand is, for example, selected from one or more of formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid and benzoic acid; the thiol ligand is, for example, selected from one or more of methyl mercaptan, ethyl mercaptan, propyl mercaptan, butyl mercaptan, pentyl mercaptan, hexanethiol, octadecyl mercaptan, dodecanethiol, hexadecanethiol, octadecanethiol and benzyl mercaptan; the (oxygen) phosphine ligand is selected from one or more of methyl phosphine, ethyl phosphine, propyl phosphine, butyl phosphine, pentyl phosphine, octyl phosphine, dioctyl phosphine, tributyl phosphine and trioctyl phosphine.

[0096] The embodiment of the present application also provides an electronic device, the electronic device includes a light-emitting device prepared by any one of the methods for preparing the light-emitting device in the embodiment of the present application, or the electronic device includes any one of the light-emitting devices in the embodiment of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0097] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0098] Example 1

[0099] This embodiment provides a light-emitting device and a method for preparing the same. The light-emitting device is a quantum dot light-emitting diode with an inverted structure, such as Figure 3As shown, in the direction from bottom to top, the light-emitting device 1 includes a substrate 10, a cathode 12, an electronic functional layer 14, a light-emitting layer 13, a hole functional layer 15 and an anode 11 which are stacked in sequence, wherein the hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 which are stacked, and the hole injection layer 151 is closer to the anode 11 than the hole transport layer 152.

[0100] The materials and thicknesses of the various layers in the light emitting device 1 are as follows:

[0101] The material of the substrate 10 is glass, and the thickness of the substrate 10 is 2 mm;

[0102] The material of the anode 11 is Ag, and the thickness of the anode 11 is 100 nm;

[0103] The material of the cathode 12 is ITO, and the thickness of the cathode 12 is 80 nm;

[0104] The material of the light-emitting layer 13 is CdZnSe quantum dots, the light-emitting color is blue, the average particle size of the quantum dots is 12nm, and the thickness of the light-emitting layer 13 is 40nm;

[0105] The material of the electronic functional layer 14 is nano ZnO (average particle size is 5 nm), and the thickness of the electronic functional layer 14 is 35 nm;

[0106] The material of the hole injection layer 151 is PEDOT:PSS, and the thickness of the hole injection layer 151 is 20 nm;

[0107] The material of the hole transport layer 152 is TFB, and the thickness of the hole transport layer 152 is 20 nm.

[0108] The method for preparing the light emitting device in this embodiment includes the following steps:

[0109] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform ultraviolet-ozone surface treatment for 20 minutes to obtain a substrate including a cathode;

[0110] S1.2, in a nitrogen environment at room temperature and pressure, spin-coat a 30 mg / mL nano ZnO-ethanol solution on the side of the cathode away from the substrate, and then heat-treat at 80°C to solidify the film to obtain an electronic functional layer;

[0111] S1.3, placing the prefabricated device after step S1.2 in an ion implanter for ion irradiation treatment, wherein the ion irradiation treatment is carried out continuously, and the implanted ions are He + The implanted ion energy is 4 keV and the implanted ion dose is 1×10 14 ions / cm 2 ;

[0112] S1.4. In a nitrogen environment at room temperature and pressure, a CdZnSe quantum dot-n-octane solution with a concentration of 10 mg / mL is spin-coated on the side of the electronic functional layer away from the cathode, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain a light-emitting layer;

[0113] S1.5. In a nitrogen environment at room temperature and pressure, spin-coat a 6.5 mg / mL TFB-chlorobenzene solution on the side of the light-emitting layer away from the electronic functional layer, and then heat-treat at 120° C. to solidify the film to obtain a hole transport layer;

[0114] S1.6. In a nitrogen environment at room temperature and pressure, a 2.8% by mass PEDOT:PSS aqueous solution is spin-coated on the side of the hole transport layer away from the light-emitting layer, and then subjected to a constant temperature heat treatment at 120° C. to solidify the film to obtain a hole injection layer;

[0115] S1.7, place the laminated structure after step S1.6 in a vacuum no higher than 3×10 -4 In the Pa evaporation chamber, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask plate to obtain an anode, which is then packaged to obtain a light-emitting device.

[0116] Example 2

[0117] This embodiment provides a light-emitting device and a method for manufacturing the same. The structure and composition of the light-emitting device in this embodiment are the same as those in Embodiment 1.

[0118] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this embodiment is different in that: the "ion dose implanted in step S1.3 is 1×10 14 ions / cm 2 " is replaced by "The implanted ion dose is 1×10 12 ions / cm 2 ”.

[0119] Example 3

[0120] This embodiment provides a light-emitting device and a method for manufacturing the same. The structure and composition of the light-emitting device in this embodiment are the same as those in Embodiment 1.

[0121] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this embodiment is different in that: the "ion dose implanted in step S1.3 is 1×10 14 ions / cm 2 " is replaced by "The implanted ion dose is 1×10 16 ions / cm 2 ”.

[0122] Example 4

[0123] This embodiment provides a light-emitting device and a method for manufacturing the same. The structure and composition of the light-emitting device in this embodiment are the same as those in Embodiment 1.

[0124] Compared with the method for preparing the light-emitting device in Example 1, the difference of the method for preparing the light-emitting device in this embodiment is that the "injected ions" in step S1.3 are He + " is replaced by "The implanted ions are Ar + ”.

[0125] Example 5

[0126] This embodiment provides a light-emitting device and a method for manufacturing the same. The structure and composition of the light-emitting device in this embodiment are the same as those in Embodiment 1.

[0127] Compared with the method for preparing the light-emitting device in Example 1, the difference of the method for preparing the light-emitting device in this embodiment is that step S1.3 is replaced by "placing the prefabricated device after completing step S1.2 in an ion implanter for ion irradiation treatment, wherein the ion irradiation treatment is performed intermittently, and the implanted ions are He + The ion irradiation treatment includes multiple ion irradiation sub-treatments. The time interval between any two adjacent ion irradiation sub-treatments is 3s. The time of each ion irradiation sub-treatment is 0.1s. The ion energy injected in each ion irradiation sub-treatment is 4keV. The total ion dose injected in the ion irradiation treatment is 1×10 14 ions / cm 2 ”.

[0128] Example 6

[0129] This embodiment provides a light emitting device and a method for preparing the same. The light emitting device is a quantum dot light emitting diode of a positive structure, such as Figure 4As shown, in the direction from bottom to top, the light emitting device 1 includes a substrate 10, an anode 11, a hole functional layer 15, a light emitting layer 13, an electron functional layer 14 and a cathode 12 which are stacked in sequence, wherein the hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 which are stacked, and the hole injection layer 151 is closer to the anode 11 than the hole transport layer 152. Except for the anode 11 and the cathode 12, the materials and thicknesses of the functional layers in the light emitting device 1 are respectively consistent with the corresponding film layers in Example 1, the material of the anode 11 is ITO, and the thickness of the anode 11 is 80nm; the material of the cathode 12 is Ag, and the thickness of the cathode 12 is 100nm.

[0130] The method for preparing the light emitting device in this embodiment includes the following steps:

[0131] S6.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, acetone for 15 minutes, ethanol for 15 minutes, and isopropanol for 15 minutes, and then dry and perform a UV-ozone surface treatment for 20 minutes to obtain a substrate including an anode;

[0132] S6.2, in a nitrogen environment at room temperature and pressure, spin-coating a 2.8% by mass PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then subjecting the anode to a constant temperature heat treatment at 120° C. to solidify the film to obtain a hole injection layer;

[0133] S6.3, in a nitrogen environment at room temperature and pressure, spin-coat a 6.5 mg / mL TFB-chlorobenzene solution on the side of the hole injection layer away from the anode, and then heat-treat at 120° C. to solidify the film to obtain a hole transport layer;

[0134] S6.4. In a nitrogen environment at room temperature and pressure, spin-coat a CdZnSe quantum dot-n-octane solution with a concentration of 10 mg / mL on the side of the hole transport layer away from the hole injection layer, and then heat-treat at 80°C to solidify the film to obtain a light-emitting layer;

[0135] S6.5. In a nitrogen environment at room temperature and pressure, spin-coat a 30 mg / mL nano ZnO-ethanol solution on the side of the light-emitting layer away from the hole transport layer, and then heat-treat at 80° C. to solidify the film to obtain an electronic functional layer;

[0136] S6.6, placing the prefabricated device after step S1.5 in an ion implanter for ion irradiation treatment, wherein the ion irradiation treatment is performed continuously, and the implanted ions are He +The implanted ion energy is 4 keV and the implanted ion dose is 1×10 14 ions / cm 2 ;

[0137] S6.7, place the laminated structure after step S1.6 in a vacuum no higher than 3×10 -4 In the evaporation chamber of Pa, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask plate to obtain a cathode, which is then packaged to obtain a light-emitting device.

[0138] Example 7

[0139] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the electronic functional layer 14 is replaced with "nano Zn 0.9 Mg 0.1 O (average particle size is 5 nm)".

[0140] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that: step S1.2 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coating a nano ZnO2 having a concentration of 30 mg / mL on the side of the cathode away from the substrate; 0.9 Mg 0.1 O-ethanol solution, and then placed in a constant temperature heat treatment at 80 ° C to solidify into a film to obtain an electronic functional layer.

[0141] Example 8

[0142] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the electronic functional layer 14 is replaced with "nano-SnO2 (with an average particle size of 5 nm)".

[0143] Compared with the preparation method of the light-emitting device in Example 1, the only difference in the preparation method of the light-emitting device in this embodiment is that step S1.2 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a nano-SnO2-ethanol solution with a concentration of 30 mg / mL on the side of the cathode away from the substrate, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain an electronic functional layer."

[0144] Comparative Example 1

[0145] This comparative example provides a light-emitting device and a method for preparing the same. The structural composition of the light-emitting device in this comparative example is the same as that of the light-emitting device in Example 1.

[0146] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this comparative example is different in that step S1.3 is omitted.

[0147] Comparative Example 2

[0148] This comparative example provides a light-emitting device and a method for preparing the same. The structural composition of the light-emitting device in this comparative example is the same as that of the light-emitting device in Example 6.

[0149] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this comparative example is different in that step S6.6 is omitted.

[0150] Comparative Example 3

[0151] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the electronic functional layer 14 is replaced with "nano-SnO2 (with an average particle size of 5 nm)".

[0152] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this comparative example is that: step S1.2 is replaced by "in a nitrogen environment at room temperature and pressure, spin-coat a nano-SnO2-ethanol solution with a concentration of 30 mg / mL on the side of the cathode away from the substrate, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain an electronic functional layer", and step S1.3 is omitted.

[0153] Experimental example

[0154] The performance of the light-emitting devices of Examples 1 to 8 and Comparative Examples 1 to 3 was tested, and the start-up voltage, current, brightness, luminescence spectrum and other parameters of each light-emitting device were obtained by detecting and obtaining key parameters such as external quantum efficiency and power efficiency, and the service life of each of the above-mentioned light-emitting devices was tested using FPD optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc.). Then, key parameters such as external quantum efficiency and power efficiency were calculated, and the service life of each of the above-mentioned light-emitting devices was tested using a life test equipment.

[0155] The current efficiency test method is: set the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the light-emitting device in the range of 0V to 6V. The initial voltage value of the brightness is 3V, and the brightness is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions, and the maximum current efficiency (CE max ,cd / A). Figure 5The current density-voltage characteristic curves of the light emitting devices in Example 1, Example 2 and Comparative Example 1 are shown, and Figure 6 The external quantum efficiency-current density characteristic curves of the light emitting devices in Example 1, Example 2 and Comparative Example 1 are shown, and Figure 7 The current density-voltage characteristic curves of the light emitting devices in Example 6 and Comparative Example 2 are shown, and Figure 8 The external quantum efficiency-current density characteristic curves of the light-emitting devices in Example 6 and Comparative Example 2 are shown.

[0156] The test method for service life is as follows: under the drive of constant current (2mA), a 128-channel QLED life test system is used to perform electroluminescent life analysis on each light-emitting device, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) is recorded. The time required for the brightness of each light-emitting device to decay from 100% to 95% at a brightness of 1000nit is calculated through the attenuation fitting formula (T95@1000nit, h).

[0157] The performance test data of each light emitting device under 25°C environment are detailed in Table 1 below:

[0158] Table 1 Performance test data of the light emitting devices in Examples 1 to 8 and Comparative Examples 1 to 3 at 25°C

[0159]

[0160]

[0161] From Table 1 and Figures 5 to 8 It can be seen that compared with the comprehensive performance of the light-emitting devices in Comparative Examples 1 and 2, the comprehensive performance of the light-emitting devices in Examples 1 to 7 has significant advantages, which are specifically manifested as follows: the photoelectric performance of the light-emitting devices in Examples 1 to 7 is better, and the device life of the light-emitting devices in Examples 1 to 7 is longer. Taking the light-emitting devices in Example 1 and Comparative Example 1 as examples, the L max is the L of the light emitting device in Comparative Example 1 max The T95 of the light-emitting device in Example 1 is 1.2 times that of the light-emitting device in Comparative Example 1, the T95@1000nit of the light-emitting device in Example 1 is 1.6 times that of the light-emitting device in Comparative Example 1, the T95@1000nit of the light-emitting device in Example 1 is 2.3 times that of the light-emitting device in Comparative Example 1, and the EQE of the light-emitting device in Example 1 is 2.6 times that of the EQE of the light-emitting device in Comparative Example 1. In addition, compared with the comprehensive performance of the light-emitting device in Comparative Example 3, the comprehensive performance of the light-emitting device in Example 8 is better.

[0162] It can be seen from this that for quantum dot light-emitting diodes in which the electron injection level is greater than the hole injection level, whether it is a light-emitting device with an upright structure or a light-emitting device with an inverted structure, during the preparation process of the light-emitting device, ion irradiation treatment of the electronic functional layer can introduce a defect interface into the electronic functional layer. The defect interface can capture excess electrons, effectively improve the exciton quenching and efficiency roll-off problems caused by excess electrons reaching the light-emitting layer, and can appropriately reduce the electron injection level, thereby promoting the electron-hole transfer balance, thereby improving the photoelectric performance and device life of the light-emitting device, and is conducive to improving the performance stability of the light-emitting device.

[0163] The above is a detailed introduction to a method for preparing a light-emitting device, a light-emitting device, and an electronic device including a light-emitting device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a light-emitting device, characterized in that: The steps include: Providing a prefabricated device including a functional film layer; and performing ion irradiation treatment on the functional film layer; Wherein, the material of the functional film layer includes a first metal oxide.

2. The preparation method according to claim 1, characterized in that: The prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer which are stacked in sequence. After the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a top electrode on a side of the functional film layer away from the light-emitting layer; Alternatively, the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, and after the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a light-emitting layer on a side of the functional film layer away from the bottom electrode; and forming a top electrode on a side of the light-emitting layer away from the functional film layer; The functional film layer is an electron functional layer or a hole functional layer.

3. The preparation method according to claim 1, characterized in that: The metal element of the first metal oxide is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals; and / or The thickness of the functional film layer is 10nm to 40nm; and / or In the ion irradiation treatment, the energy range of the injected ions is 3keV to 5keV, and the injected ion dose is 1×10 8 ions / cm 2 ~1×10 16 ions / cm 2 ; and / or The ions used in the ion irradiation treatment are ions generated by ionization of an inert gas. Optionally, the ions used in the ion irradiation treatment are He + ,Ar + 、Ne + , Kr + 、Xe + and N 2+ One or more of; and / or The ion irradiation treatment is carried out continuously or intermittently; when the ion irradiation treatment is carried out intermittently, the ion irradiation treatment includes multiple ion irradiation sub-treatments, the time of each ion irradiation sub-treatment in the multiple ion irradiation sub-treatments is 0.01s to 1s, and / or the time interval between two adjacent ion irradiation sub-treatments is 3s to 15s.

4. The preparation method according to claim 1, characterized in that: The method for preparing the functional film layer comprises the following steps: depositing a first solution comprising a first metal oxide; and The deposited first solution is dried to obtain a functional film layer.

5. The preparation method according to claim 1, characterized in that: The functional film layer is an electronic functional layer, and the first metal oxide is selected from doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide and doped or undoped zirconium oxide, wherein, when the first metal oxide is a doped metal oxide, the doped metal element of the first metal oxide is selected from one or more of magnesium, calcium, gallium, lithium, aluminum, titanium, yttrium, indium and tin.

6. The preparation method according to claim 5, characterized in that: When the prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer which are stacked in sequence, the prefabricated device further comprises a hole functional layer, and the hole functional layer is arranged between the bottom electrode and the light-emitting layer; Alternatively, when the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, after the step of subjecting the functional film layer to ion irradiation treatment, the preparation method further comprises the steps of: forming a light-emitting layer, a hole functional layer and a top electrode in sequence on a side of the functional film layer away from the bottom electrode; The material of the hole functional layer includes poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), 4,4'-bis (9-carbazole) biphenyl, poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline ], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4 ',4'-Tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'- Spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide.

7. The preparation method according to claim 1, characterized in that: The functional film layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide and doped or undoped copper oxide; when the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

8. The preparation method according to claim 7, characterized in that: When the prefabricated device comprises a bottom electrode and the functional film layer stacked in sequence, the method for preparing the light-emitting device further comprises the steps of: forming a light-emitting layer, an electronic functional layer and a top electrode in sequence on a side of the functional film layer away from the bottom electrode; Alternatively, when the prefabricated device comprises a bottom electrode, a light-emitting layer and the functional film layer which are stacked in sequence, the prefabricated device further comprises a hole functional layer, and the hole functional layer is arranged between the bottom electrode and the light-emitting layer; Wherein, the material of the electronic functional layer comprises an organic electronic functional compound. Optionally, the organic electronic functional compound is selected from one or more of 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene), 1,3,5-tri((3-pyridyl)-3-phenyl)benzene, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, tris(8-hydroxyquinoline)aluminum and bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum.

9. The light emitting device according to claim 1, characterized in that: The materials of the bottom electrode and the top electrode are independently selected from one or more of a metal, a carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; and / or The quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; and / or The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS , HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb , InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, In PSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlN The IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; and / or The general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or The general structural formula of the organic perovskite quantum dots is CMX3, where C is a carboxamidine group; and / or The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations.

10. A light emitting device, characterized in that: The light-emitting device is manufactured by the manufacturing method as described in any one of claims 1 to 9.

11. An electronic device, characterized in that: The electronic device comprises a light emitting device manufactured by the method for manufacturing a light emitting device as claimed in any one of claims 1 to 10.

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