Single crystal furnace power control method, single crystal furnace, storage medium and program product

Abstract

The embodiment of the invention provides a single crystal furnace power control method, a single crystal furnace, a storage medium and a program product, and relates to the technical field of single crystal manufacturing. The historical crystal pulling data are crystal pulling data corresponding to survived single crystals; extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data; the target crystal pulling data is crystal pulling data in the last single crystal production process; obtaining target seeding power and target equal-diameter power according to the reference crystal pulling data and the target crystal pulling data; and performing power control on the single crystal furnace according to the target seeding power and the target equal-diameter power. Through the mode, the accuracy of power control of the single crystal furnace can be effectively improved, so that the efficiency and the quality of single crystal production are improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal manufacturing, and in particular to a single crystal furnace power control method, a single crystal furnace, a storage medium and a program product. Background Art

[0002] As one of the most important basic materials in the semiconductor industry, the quality of monocrystalline silicon has a direct and profound impact on the performance of a series of products such as integrated circuits and solar cells.

[0003] The single crystal furnace is the core key equipment for preparing single crystal silicon. Its power control is a key factor that plays an important role in the quality and efficiency of single crystal growth.

[0004] In the related art, the power control of the single crystal furnace mostly relies on a pre-set program, or only relies on manual experience for control, which has low accuracy. Summary of the invention

[0005] The embodiments of the present application provide a single crystal furnace power control method, a single crystal furnace, a storage medium and a program product, which can effectively improve the accuracy of single crystal furnace power control.

[0006] In a first aspect, an embodiment of the present application provides a single crystal furnace power control method, comprising:

[0007] Acquire historical crystal pulling data; the historical crystal pulling data is the crystal pulling data corresponding to the surviving single crystal;

[0008] Extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data; the target crystal pulling data is the crystal pulling data in the last single crystal production process;

[0009] According to the reference crystal pulling data and the target crystal pulling data, a target seeding power and a target equal-diameter power are obtained;

[0010] The single crystal furnace is power controlled according to the target seeding power and the target equal-diameter power.

[0011] In some embodiments, obtaining a target seeding power and a target equal-diameter power according to the reference crystal pulling data and the target crystal pulling data includes:

[0012] Inputting the reference crystal pulling data and the target crystal pulling data into a power adjustment model to obtain the power adjustment parameters, wherein the power adjustment parameters include a seeding power adjustment amount and an equal diameter power adjustment amount;

[0013] The preset seeding power is adjusted based on the seeding power adjustment amount to obtain the target seeding power, and the preset equal-diameter power is adjusted based on the equal-diameter power adjustment amount to obtain the target equal-diameter power.

[0014] In some embodiments, extracting reference crystal pulling data from the historical crystal pulling data includes:

[0015] Classifying the historical crystal pulling data based on the data type of the crystal pulling data to obtain multiple types of initial crystal pulling data;

[0016] For any type of initial crystal pulling data, extracting the median of the initial crystal pulling data;

[0017] Based on the median, the reference crystal pulling data is determined.

[0018] In some embodiments, before inputting the reference crystal pulling data and the target crystal pulling data into the power prediction model, the method further includes:

[0019] Based on the historical crystal pulling data and the reference crystal pulling data, parameters of an initial power adjustment model are fitted to obtain the power adjustment model; the initial power adjustment model is used to characterize the mapping relationship between the historical crystal pulling data and the power adjustment parameters.

[0020] In some embodiments, the initial power adjustment model includes a first function and a second function, the first function is used to determine the seeding power adjustment amount, the second function is used to determine the equal diameter power adjustment amount, and the initial power adjustment model is parameter fitted based on the historical crystal pulling data and the reference crystal pulling data to obtain the power adjustment model, including:

[0021] The historical crystal pulling data are sorted from large to small according to the single crystal survival rate, and the first M target crystal pulling data are extracted; wherein M is an integer greater than 2;

[0022] The data related to the first function among the first M target crystal pulling data and the reference crystal pulling data are brought into the first function, and the first function is fitted. Also, the data related to the second function among the first M target crystal pulling data and the reference crystal pulling data are brought into the second function, and the second function is fitted to obtain the power adjustment model.

[0023] In some embodiments, inputting the reference crystal pulling data and the target crystal pulling data into a power adjustment model to obtain the power adjustment parameter includes:

[0024] Inputting data of the same data type as the first characteristic data in the reference crystal pulling data and the target crystal pulling data into the first function to obtain the seeding power adjustment amount;

[0025] The data of the reference crystal pulling data and the target crystal pulling data having the same data type as the second characteristic data is input into the second function to obtain the equal-diameter power adjustment amount.

[0026] In some embodiments, after obtaining the power adjustment model, the method further includes:

[0027] The remaining data in the historical crystal pulling data are used to perform parameter fitting verification on the first function and the second function.

[0028] In a second aspect, an embodiment of the present application further provides a single crystal furnace, including a furnace body and a control system, wherein the control system includes:

[0029] Memory for storing computer programs;

[0030] A processor, configured to execute the computer program to implement the method described in any one of the first aspects of the claims.

[0031] In a third aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, and the computer program is executed by a processor to implement any one of the methods in the first aspect.

[0032] In a fourth aspect, the present application provides a computer program product, comprising a computer program, which implements any one of the methods in the first aspect when executed by a processor. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic diagram of a scenario provided for an embodiment of the present application;

[0034] Figure 2 A schematic diagram of a single crystal furnace power control method provided in an embodiment of the present application Figure 1 ;

[0035] Figure 3 A schematic diagram of a single crystal furnace power control method provided in an embodiment of the present application Figure 2 ;

[0036] Figure 4 A schematic diagram of the structure of a single crystal furnace power device provided in an embodiment of the present application;

[0037] Figure 5 A schematic diagram of the structure of a single crystal furnace provided in an embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] In the embodiments of the present application, words such as "first" and "second" are used to distinguish the same or similar items with substantially the same functions and effects, and do not limit their order. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0040] It should be noted that in the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0041] In addition, the terms "including" and "having" and any variations thereof are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to those components explicitly listed, but may include other components not explicitly listed or inherent to such products or devices.

[0042] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0043] First, the technical terms involved in the embodiments of the present application are briefly introduced:

[0044] In the single crystal production process, it can be roughly divided into the steps of loading, heating the melt (fusion), temperature adjustment, seeding, shoulder release, shoulder rotation, equal diameter, and finishing. Among them, the steps can also be called stages or steps. For example, the temperature adjustment step can also be called a temperature adjustment stage or a temperature adjustment step.

[0045] At each stage of single crystal production, the following parameters may be included:

[0046] Temperature adjustment time T1: the time from the completion of welding to the start of the seeding step. The length of this time can reflect whether the set target liquid temperature and seeding power are appropriate.

[0047] Seeding power W1: The heater power set in the seeding step is used as the reference value for adjustment. The correction value is calculated based on other parameters in the model and then adjusted based on the reference value.

[0048] Seeding liquid level measurement value L1: The system measurement value of the distance between the seeding step liquid level and the lower edge of the guide tube. The size of this measurement value can reflect the direct coverage area of ​​the heater silicon liquid and thus reflect the liquid surface temperature under the same heater power. It is one of the key reference parameters for power adjustment.

[0049] Millimeter (mm) pulling speed V1 after seeding: The crystal lifting speed in the last 100 mm of the seeding process can reflect the temperature and liquid temperature of the seeding process, and is one of the key references for power adjustment.

[0050] Shoulder release pulling speed V2: The average crystal rise speed during the shoulder release process can reflect the temperature in the furnace during the shoulder release process and is one of the key parameters for power adjustment.

[0051] Shoulder release time T2: The duration of the shoulder release process, which together with the shoulder release pulling speed reflects the furnace temperature during the shoulder release process.

[0052] Shoulder release and cooling (W1-W2): The variation range of heating power during the shoulder release process. By monitoring whether this parameter is within a reasonable range, it is analyzed whether the seeding power and equal diameter power are appropriate.

[0053] Equal diameter power W2: The heater power set when entering the equal diameter process step is used as the reference value for adjustment. The correction value is calculated based on the model calculation of other parameters and then adjusted based on the reference value.

[0054] 100mm equal diameter pulling speed V3: The average crystal rise speed within the 100mm equal diameter process can reflect the temperature inside the furnace during the equal diameter process and is an important parameter for power adjustment.

[0055] Equal-diameter liquid level measurement value L2: The measurement value of the equal-diameter process liquid surface from the lower edge of the guide tube. The size of this measurement value can reflect the coverage area of ​​the direct silicone liquid of the heater and thus reflect the liquid surface temperature under the same heater power. It is one of the key reference parameters for power adjustment.

[0056] As mentioned above, as one of the most important basic materials in the semiconductor industry, the quality of single crystal silicon has a profound impact on the performance of a series of products such as integrated circuits and solar cells. As the core key equipment for preparing single crystal silicon, power control is undoubtedly a key factor that plays an important role in the quality and efficiency of single crystal growth.

[0057] Traditional single crystal furnace power control relies heavily on pre-set programs or manual adjustments. This approach has obvious limitations and is difficult to accurately adapt to real-time changes in the single crystal growth process. Because of this, it often leads to a series of serious problems such as excessive energy consumption and low yield. Due to the inaccurate power control, the energy consumption of the single crystal furnace has increased significantly, which not only causes a waste of resources, but also increases production costs, and also restricts the development of related industries to a certain extent.

[0058] In view of this, the embodiments of the present application provide a single crystal furnace power control method, a single crystal furnace, a storage medium and a program product. By adjusting the power in the current production process based on historical crystal pulling big data, the power of the single crystal furnace can be accurately controlled, thereby significantly reducing the thermal stress and crystal defects generated by single crystal silicon during the growth process, and improving the quality and efficiency of single crystal growth.

[0059] The following specific embodiments are used to describe in detail the technical solution of the present application and how the technical solution of the present application solves the above technical problems. The following specific embodiments can be implemented independently or in combination with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0060] Figure 1 Schematic diagram of application scenarios of the embodiments of the present application, such as Figure 1 As shown, it includes: single crystal production equipment 1 and control system 2.

[0061] The single crystal production equipment 1 may include a single crystal furnace and a crucible arranged in the single crystal furnace, and the single crystal furnace is used to heat the crucible.

[0062] The control system 2 is used to control the single crystal furnace to heat the crucible. In some embodiments, the control system 2 can also obtain the temperature in the crucible to adjust the power of the single crystal furnace to meet the temperature requirements of different stages of single crystal production.

[0063] In some embodiments, the single crystal production equipment 1 and the control system 2 may be integrated or separately arranged, and this application does not limit this.

[0064] Below Figure 1The control system in is the execution body, and the single crystal furnace power control method provided in the embodiment of the present application is explained.

[0065] Figure 2 A flow chart of a single crystal furnace power control method is provided for an embodiment of the present application, such as Figure 2 As shown, including:

[0066] S201. Obtain historical crystal pulling data.

[0067] In some embodiments, the historical crystal pulling data may include temperature adjustment time T1, seeding power W1, seeding liquid level measurement value L1, 100mm pulling speed V1 after seeding, shoulder release pulling speed V2, shoulder release time T2, equal diameter power W2, equal diameter 100mm pulling speed V3, equal diameter liquid level measurement value L2 and other data in the historical single crystal production process.

[0068] In some embodiments, in order to ensure the survival rate of single crystals, the historical crystal pulling data may refer to the crystal pulling data corresponding to the surviving single crystals, that is, the historical crystal pulling data is the data corresponding to the single crystals that failed to survive during the single crystal production process, wherein the surviving single crystal may refer to a single crystal having an equal diameter length greater than a preset length, for example, the preset length may be 500 mm.

[0069] During the single crystal production process, the control system can extract the historical crystal pulling data from a database storing production data. Optionally, the database can be a built-in database of the control system or an external database, which is not limited in the present embodiment.

[0070] S202: extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data.

[0071] In some embodiments, the reference crystal pulling data is the median of the historical crystal pulling data, or the mean of the historical crystal pulling data, which is not limited in the embodiments of the present application. For ease of understanding, the median is used as an example for explanation.

[0072] Exemplarily, the historical crystal pulling data includes crystal pulling data corresponding to N production processes, and each production process includes a set of different types of crystal pulling data, that is, each production process includes parameters such as T1, W1, L1, V1, V2, T2, W2, V3, and L2.

[0073] When the control system reads the historical crystal pulling data from the database, the historical crystal pulling data can be classified based on the data type of the crystal pulling data to obtain multiple types of initial crystal pulling data. For example, the historical crystal pulling data includes m groups of different types of crystal pulling data, and the control system can extract the same type of data from each group of crystal pulling data to obtain the initial crystal pulling data.

[0074] For example, the initial crystal pulling data may be as follows:

[0075] T1: (a1, b1, c1,..., m1);

[0076] W1: (a2, b2, c2,..., m2);

[0077] …

[0078] L2: (a9, b9, c9, ..., m9).

[0079] Among them, T1: (a1, b1, c1, ..., m1) is composed of the temperature adjustment time of each group in the m groups of crystal pulling data, and the rest are similar and will not be repeated here.

[0080] The initial crystal pulling data is acquired, and for any type of initial crystal pulling data, a median of the initial crystal pulling data is extracted, and the reference crystal pulling data is determined based on the median.

[0081] For example, taking T1 as an example, (a1, b1, c1, ..., m1) are sorted from large to small, and the median T1 is extracted. m .

[0082] When the control system obtains the medians of each type of crystal pulling, it can combine the medians of each type of crystal pulling to obtain the reference crystal pulling data.

[0083] For example, the reference crystal pulling data can be expressed as (T1 m 、W1 m 、L1 m 、V1 m 、V2 m 、T2 m 、W2 m 、V3 m 、L2 m ).

[0084] The target crystal pulling data is the crystal pulling data in the last single crystal production process. For example, the target crystal pulling data can be expressed as (T1, W1, L1, V1, V2, T2, W2, V3, L2).

[0085] S203. Obtain a target seeding power and a target equal-diameter power according to the reference crystal pulling data and the target crystal pulling data.

[0086] In some embodiments, the control system may use a pre-trained power adjustment model to obtain the target seeding power and the target constant diameter power, wherein the power adjustment model is a model trained based on reference crystal pulling data and target crystal pulling data extracted from historical crystal pulling data.

[0087] For example, the reference crystal pulling data and the target crystal pulling data are input into a power adjustment model to obtain the power adjustment parameters, and the power adjustment parameters include a seeding power adjustment amount and an equal-diameter power adjustment amount; based on the seeding power adjustment amount, the preset seeding power is adjusted to obtain the target seeding power, and based on the equal-diameter power adjustment amount, the preset equal-diameter power is adjusted to obtain the target equal-diameter power.

[0088] For this single crystal production, the control system can input the reference crystal pulling data and the target crystal pulling data into the power adjustment model to obtain the seeding power adjustment amount ΔW1 and the equal-diameter power adjustment amount ΔW2 output by the power adjustment model.

[0089] When the control system obtains the seeding power adjustment amount ΔW1 and the equal-diameter power adjustment amount ΔW2, it can determine the target seeding power (W1+ΔW1) based on the preset seeding power W1 and the seeding power adjustment amount ΔW1, and determine the target seeding power (W2+ΔW2) based on the preset equal-diameter power W2 and the equal-diameter power adjustment amount ΔW2.

[0090] S204, performing power control on the single crystal furnace according to the target seeding power and the target equal-diameter power.

[0091] In some embodiments, when entering the seeding stage, the control system adjusts the originally preset seeding power from W1 to the target seeding power (W1+ΔW1); when entering the equal-diameter stage, the control system adjusts the originally preset seeding power from W2 to the target equal-diameter power (W2+ΔW2).

[0092] The single crystal furnace power control method provided in the embodiment of the present application is obtained by acquiring historical crystal pulling data; the historical crystal pulling data is the crystal pulling data corresponding to the live single crystal; extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data; the target crystal pulling data is the crystal pulling data in the last single crystal production process; according to the reference crystal pulling data and the target crystal pulling data, the target crystal seeding power and the target equal-diameter power are obtained; the single crystal furnace is power controlled according to the target crystal seeding power and the target equal-diameter power. In the above method, based on the analysis of the historical live data and combined with the pre-trained power adjustment model, the power adjustment amount of the single crystal furnace used for the current single crystal production can be obtained, and the power of the single crystal furnace is adjusted based on the power adjustment amount, so that the power of the single crystal furnace can be accurately controlled, and the undesirable situation of overheating or insufficient heating in the production process can be effectively avoided, thereby significantly reducing the thermal stress and crystal defects generated by the single crystal silicon during the growth process, and improving the quality and efficiency of the single crystal growth.

[0093] Below Figure 2 Based on the embodiment shown, combined Figure 3A single crystal furnace power control method provided in an embodiment of the present application is further described.

[0094] Figure 3 A schematic diagram of a single crystal furnace power control method provided in an embodiment of the present application Figure 2 ,like Figure 3 As shown, including:

[0095] S301, obtaining historical crystal pulling data.

[0096] In some embodiments, the specific implementation method of step S301 is the same as Figure 2 The specific implementation method of step S201 in the illustrated embodiment is similar and will not be repeated here.

[0097] S302: Perform dimensionality reduction processing on the historical data.

[0098] In some embodiments, when the control system obtains the historical data, it can perform dimensionality reduction processing on the historical data, thereby removing noise and redundant information in the historical data, highlighting the main features of the data, and reducing the amount of calculation. For example, the control system can use a principal component analysis (PCA) algorithm to perform dimensionality reduction processing on the historical data.

[0099] PCA is a commonly used machine learning algorithm, mainly used for data dimensionality reduction. Its basic idea is to project the original data into a new coordinate system through linear transformation, so that the coordinate axes of the new coordinate system (i.e., principal components) can explain the variance of the data to the greatest extent. In this way, the original data can be approximated by fewer principal components, thereby achieving the purpose of dimensionality reduction. The advantages of PCA include: reducing data dimensions, reducing computational workload and storage space. Removing noise and redundant information, and highlighting the main features of the data. It helps in data visualization, making complex data easier to understand.

[0100] Exemplarily, the dimensionality reduction process for the historical data may include the following steps:

[0101] 1. Data standardization: Scale historical data to a standard range with a mean of 0 and a variance of 1 to ensure that different features contribute equally to the analysis.

[0102] 2. Calculate the covariance matrix: Calculate the covariance matrix between historical data.

[0103] 3. Solve eigenvalues ​​and eigenvectors: Perform eigenvalue decomposition on the covariance matrix to obtain the eigenvalues ​​and corresponding eigenvectors.

[0104] 4. Select principal components: Select the eigenvectors corresponding to the first few largest eigenvalues ​​according to the size of the eigenvalues. These eigenvectors constitute a new feature space.

[0105] 5. Transform data: Project the original data into the new feature space to obtain the reduced-dimensional data.

[0106] S303, extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data after dimensionality reduction.

[0107] In some embodiments, the specific implementation method of step S303 is the same as Figure 2 The specific implementation method of step S202 in the illustrated embodiment is similar and will not be repeated here.

[0108] S304: Based on the historical crystal pulling data and the reference crystal pulling data, perform parameter fitting on an initial power adjustment model to obtain the power adjustment model.

[0109] In some embodiments, the initial power adjustment model includes a first function and a second function, wherein the first function is used to determine the seeding power adjustment amount, and the second function is used to determine the equal-diameter power adjustment amount.

[0110] The control system can perform parameter fitting on the initial power adjustment model by using the following method:

[0111] The control system sorts the historical crystal pulling data according to the single crystal survival rate from large to small, and extracts the first M target crystal pulling data; M is an integer greater than 2; the data related to the first function in the first M target crystal pulling data and the reference crystal pulling data are brought into the first function, and the first function is fitted; and the data related to the second function in the first M target crystal pulling data and the reference crystal pulling data are brought into the second function, and the second function is fitted to obtain the power adjustment model.

[0112] Exemplarily, the first function may be as follows:

[0113] f(ΔW1)=a*(T1 m -T1)+b*(L1 m -L1)+c*(V1 m -V1)+d*(V2 m -V2)+e*(T2 m -T2);

[0114] The second function can be as follows:

[0115] f(ΔW2)=f*(V3 m -V3)+g*(W1m -W2)+h*(L2 m -L2)

[0116] After the control system obtains the historical crystal pulling data, it can sort the historical crystal pulling data according to the survival rate, and select the crystal pulling data of the first M groups in the sorting to fit the above model. For example, the above model includes 8 unknown parameters, and the data of the first 8 groups in the survival rate sorting can be selected for model fitting.

[0117] After obtaining M groups of crystal pulling data, the M groups of crystal pulling data and reference crystal pulling data can be brought into the above model. Each group of crystal pulling data and reference crystal pulling data can establish an equation. By solving the equations simultaneously, the coefficient values ​​of a, b, c, etc. in the model are solved to obtain the first function and the second function after fitting. Among them, the left side of the model equation is (ΔW1, ΔW2) the difference between two consecutive W1 and W2 in the M groups of crystal pulling data.

[0118] In some embodiments, to further improve the generalization of the model, after the control system obtains the fitted model, the remaining data in the historical crystal pulling data and the reference crystal pulling data can be used to verify the model to ensure that the model can cover most (e.g., greater than 90%) scenarios. For example, when the model is verified by the remaining data in the historical crystal pulling data and the reference crystal pulling data, if there are many deviation results, the coefficients therein can be fine-tuned, for example, by using a preset adjustment algorithm to adjust the parameters.

[0119] Exemplarily, if during verification, the historical crystal pulling data and the reference crystal pulling data are brought into the first function and / or the second function, and the calculated values ​​on the left and right sides are not equal, the coefficients can be fine-tuned so that the deviations on the left and right sides are less than or equal to the preset threshold. For example, for the first function, the data calculated on the left and right sides are 100 and 110 respectively. By adjusting the coefficients, the calculation result on the right side of the model can be adjusted to 105, so that the difference is less than or equal to the preset value (5). Correspondingly, after adjusting the coefficients, the first M crystal pulling data of the survival rate can be brought in again for verification to ensure that the model can cover its data.

[0120] It should be understood that the step shown in S304 can be performed in each production process, and the values ​​of various parameters in the model can be continuously optimized by continuously updating the historical crystal pulling data to ensure the accuracy of the calculation results.

[0121] Since the probability of sudden changes in the production environment is small, step S304 can be performed for fitting at regular intervals. For example, after the fitting is completed, the subsequent N production processes all use the parameters fitted in this production process, thereby improving the calculation efficiency of the control system. In the N+1 production process, historical crystal pulling data is used again for parameter fitting.

[0122] S305 , inputting the reference crystal pulling data and the target crystal pulling data into a power adjustment model to obtain the power adjustment parameters.

[0123] In some embodiments, during the current single crystal production process, the control system may input the target crystal pulling data in the previous production and the data related to the first function in the reference crystal pulling data into the first function to obtain the crystal induction power adjustment amount ΔW1, and input the target crystal pulling data in the previous production and the data related to the second function in the reference crystal pulling data into the second function to obtain the equal-diameter power adjustment amount ΔW2.

[0124] S306 , adjusting the preset powers of the seeding stage and the equal diameter stage based on the power adjustment parameters.

[0125] In some embodiments, the specific implementation method of step S306 is the same as Figure 2 The specific implementation method of step S203 in the illustrated embodiment is similar and will not be repeated here.

[0126] Optionally, when the preset powers of the seeding stage and the equal-diameter stage are adjusted based on the power adjustment parameters, the adjustment can also be made by adjusting the duration of the seeding stage and the equal-diameter stage.

[0127] For example, the total heating amount in the seeding stage is determined based on the seeding power (W1+ΔW1) and the duration of the seeding stage after adjustment, and the duration of the seeding stage after adjustment is calculated based on the total heating amount and the preset seeding power. The power is adjusted by extending the time, and the probability of uncertainty in the production process caused by the sudden change in temperature due to the change in power can be reduced, ensuring that the heating process is carried out smoothly.

[0128] In summary, the control method of the single crystal furnace provided in the embodiment of the present application can significantly reduce the thermal stress and crystal defects generated by the single crystal silicon during the growth process through accurate power control means. It creates more ideal conditions for the growth of single crystal silicon, thereby effectively improving the purity and consistency of the single crystal. It can avoid the undesirable situation of overheating or insufficient heating during the production process. Through accurate analysis and forward-looking judgment of various relevant data, it can adjust the heating strategy in advance, thereby maximizing energy efficiency. At the same time, it reduces the uncertainty and error caused by human intervention, significantly shortens the growth cycle of single crystal silicon, greatly improves the output speed of single crystal, and the control system continuously collects, analyzes and processes a large amount of data from different production scenarios, and calculates the optimal power control mode under various complex and changeable situations. Whether facing raw materials of slightly poor quality or more demanding growth conditions, the system can quickly make accurate adjustments and optimizations to ensure the stable progress of the production process.

[0129] Based on the above embodiments, the embodiments of the present application also provide a single crystal furnace power control device.

[0130] Figure 4 The schematic diagram of the structure of the single crystal furnace power control device 40 provided in the embodiment of the present application is as follows: Figure 4 As shown, including:

[0131] The acquisition module 401 is used to acquire historical crystal pulling data; the historical crystal pulling data is the crystal pulling data corresponding to the surviving single crystal.

[0132] The extraction module 402 is used to extract reference crystal pulling data and target crystal pulling data from the historical crystal pulling data; the target crystal pulling data is the crystal pulling data in the last single crystal production process.

[0133] A processing module 403 is used to obtain a target seeding power and a target equal-diameter power according to the reference crystal pulling data and the target crystal pulling data;

[0134] The control module 404 is used to control the power of the single crystal furnace according to the target seeding power and the target equal-diameter power.

[0135] In some embodiments, the processing module 403 is also used to input the reference crystal pulling data and the target crystal pulling data into the power adjustment model to obtain the power adjustment parameters, and the power adjustment parameters include a seeding power adjustment amount and an equal-diameter power adjustment amount; based on the seeding power adjustment amount, the preset seeding power is adjusted to obtain the target seeding power, and based on the equal-diameter power adjustment amount, the preset equal-diameter power is adjusted to obtain the target equal-diameter power.

[0136] In some embodiments, the extraction module 402 is further used to classify the historical crystal pulling data based on the data type of the crystal pulling data to obtain multiple types of initial crystal pulling data; for any type of initial crystal pulling data, extract the median of the initial crystal pulling data; and determine the reference crystal pulling data based on the median.

[0137] In some embodiments, the processing module 403 is also used to perform parameter fitting on the initial power adjustment model based on the historical crystal pulling data and the reference crystal pulling data to obtain the power adjustment model; the initial power adjustment model is used to characterize the mapping relationship between the historical crystal pulling data and the power adjustment parameters.

[0138] In some embodiments, the initial power adjustment model includes a first function and a second function, the first function is used to determine the crystal induction power adjustment amount, and the second function is used to determine the equal-diameter power adjustment amount. The processing module 403 is also used to sort the historical crystal pulling data from large to small according to the single crystal survival rate, and extract the first M target crystal pulling data; M is an integer greater than 2; the data related to the first function in the first M target crystal pulling data and the reference crystal pulling data are brought into the first function, and the first function is fitted, and the data related to the second function in the first M target crystal pulling data and the reference crystal pulling data are brought into the second function, and the second function is fitted to obtain the power adjustment model.

[0139] In some embodiments, the processing module 403 is also used to input the data type of the reference crystal pulling data and the target crystal pulling data that is the same as the first characteristic data into the first function to obtain the crystal induction power adjustment amount; and input the data type of the reference crystal pulling data and the target crystal pulling data that is the same as the second characteristic data into the second function to obtain the equal-diameter power adjustment amount.

[0140] In some embodiments, the processing module 403 is further configured to use the remaining data in the historical crystal pulling data to perform parameter fitting verification on the first function and the second function.

[0141] A single crystal furnace power control device provided in an embodiment of the present application can execute the technical solution of the single crystal furnace power control method provided in any of the above embodiments, and its principles and technical effects are similar, which will not be repeated here.

[0142] It should be noted that it should be understood that the division of the various modules of the above device is only a division of logical functions. In actual implementation, they can be fully or partially integrated into one physical entity, or they can be physically separated. And these modules can all be implemented in the form of software called by processing elements; they can also be all implemented in the form of hardware; some modules can also be implemented in the form of software called by processing elements, and some modules can be implemented in the form of hardware. Each module can be a separately established processing element, or it can be integrated in a chip of the above device. In addition, it can also be stored in the memory of the above device in the form of program code, and called and executed by a processing element of the above device. The functions of each module. In addition, all or part of these modules can be integrated together, or they can be implemented independently. The processing element here can be an integrated circuit with signal processing capabilities. In the implementation process, each step of the above method or each module above can be completed by an integrated logic circuit of hardware in the processor element or instructions in the form of software.

[0143] The embodiment of the present application also provides a single crystal furnace.

[0144] Figure 5 The schematic diagram of the structure of the single crystal furnace 50 provided in the embodiment of the present application is as follows: Figure 5 As shown, the single crystal furnace may include: a furnace body and a control system.

[0145] The control system may include a transceiver 501 , a processor 502 , and a memory 503 .

[0146] The processor 502 executes the computer execution instructions stored in the memory, so that the processor 502 executes the scheme in the above embodiment. The processor 502 can be a general-purpose processor, including a central processing unit CPU, a network processor (network processor, NP), etc.; it can also be a digital signal processor DSP, an application-specific integrated circuit ASIC, a field programmable gate array FPGA or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0147] The memory 503 is connected to the processor 502 via a system bus and implements communication therebetween. The memory 503 is used to store computer program instructions.

[0148] The transceiver 501 can perform receiving data / instructions and sending data / instructions.

[0149] Optionally, the electronic device 50 may further include a communication interface, so that it can communicate and interact with an external or internal device through the communication interface 503. The external device may be, for example, a client (e.g., a mobile phone, a tablet). In a specific implementation, if the communication interface, the memory 503, and the processor 502 are implemented independently, the communication interface, the memory 503, and the processor 502 may be interconnected through a bus and communicate with each other.

[0150] The system bus can be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The system bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus. The transceiver is used to realize the communication between the database access device and other computers (such as clients, read-write libraries, and read-only libraries). The memory may include random access memory (RAM) and may also include non-volatile memory.

[0151] Optionally, in a specific implementation, if the communication interface, the memory 503 and the processor 502 are integrated on a chip, the communication interface, the memory 503 and the processor 502 can communicate through an internal interface.

[0152] An embodiment of the present application also provides a chip for running instructions, which is used to execute the technical solution executed by the above control system in the above embodiment.

[0153] A computer-readable storage medium is also provided in an embodiment of the present application, on which a computer program is stored. When the computer program is executed by a processor, the technical solution executed by the above-mentioned control system is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0154] In one possible implementation, a computer-readable medium may include a random access memory (RAM), a read-only memory (ROM), a compact disc read-only memory (CD-ROM) or other optical disk storage, a magnetic disk storage or other magnetic storage device, or any other medium that is intended to carry or store the required program code in the form of instructions or data structures and can be accessed by a computer. Moreover, any connection is appropriately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL) or wireless technologies such as infrared, radio and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL or wireless technologies such as infrared, radio and microwave are included in the definition of the medium. Disks and optical disks as used herein include optical disks, laser disks, optical disks, digital versatile disks (DVDs), floppy disks and Blu-ray disks, where disks usually reproduce data magnetically, while optical disks reproduce data optically using lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0155] A computer program product is also provided in an embodiment of the present application, including a computer program. When the computer program is executed by a processor, the technical solution executed by the above-mentioned control system is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0156] In the specific implementation of the above-mentioned terminal device or server, it should be understood that the processor can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. The general-purpose processor can be a microprocessor or the processor can be any conventional processor, etc. The steps of the method disclosed in the embodiments of the present application can be directly embodied as being executed by a hardware processor, or can be executed by a combination of hardware and software modules in the processor.

[0157] Those skilled in the art will appreciate that all or part of the steps of any of the above method embodiments may be completed by hardware associated with program instructions. The aforementioned program may be stored in a computer-readable storage medium, and when the program is executed, all or part of the steps of the above method embodiments are executed.

[0158] If the technical solution of the present application is implemented in the form of software and sold or used as a product, it can be stored in a computer-readable storage medium. Based on such an understanding, all or part of the technical solution of the present application can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a computer program or several instructions. The computer software product enables a computer device (which can be a personal computer, a server, a network device, or a similar electronic device) to perform all or part of the steps of the method described in the embodiment of the present application.

[0159] It should be noted that, for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the described order of actions, because according to the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0160] It should be further noted that, although the various steps in the flowchart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowchart may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0161] It should be understood that the above-mentioned device embodiments are only illustrative, and the device of the present application can also be implemented in other ways. For example, the division of units / modules in the above-mentioned embodiments is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units, modules or components can be combined, or can be integrated into another system, or some features can be ignored or not executed.

[0162] In addition, unless otherwise specified, each functional unit / module in each embodiment of the present application may be integrated into one unit / module, each unit / module may exist physically separately, or two or more units / modules may be integrated together. The above-mentioned integrated unit / module may be implemented in the form of hardware or in the form of a software program module.

[0163] If the integrated unit / module is implemented in the form of hardware, the hardware may be a digital circuit, an analog circuit, etc. The physical implementation of the hardware structure includes but is not limited to transistors, memristors, etc. If not specifically stated, the processor may be any appropriate hardware processor, such as a CPU, a GPU, an FPGA, a DSP, an ASIC, etc. If not specifically stated, the storage unit may be any appropriate magnetic storage medium or magneto-optical storage medium, such as a resistive random access memory RRAM (Resistive Random Access Memory), a dynamic random access memory DRAM (Dynamic Random Access Memory), a static random access memory SRAM (Static Random-Access Memory), an enhanced dynamic random access memory EDRAM (Enhanced Dynamic Random Access Memory), a high-bandwidth memory HBM (High-Bandwidth Memory), a hybrid memory cube HMC (Hybrid Memory Cube), etc.

[0164] If the integrated unit / module is implemented in the form of a software program module and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or all or part of the technical solution, can be embodied in the form of a software product, which is stored in a memory and includes several instructions for a computer device (which can be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the various embodiments of the present application. The aforementioned memory includes: U disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), mobile hard disk, disk or optical disk and other media that can store program codes.

[0165] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0166] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A single crystal furnace power control method, characterized in that: include: Acquire historical crystal pulling data; the historical crystal pulling data is the crystal pulling data corresponding to the surviving single crystal; Extracting reference crystal pulling data and target crystal pulling data from the historical crystal pulling data; The target crystal pulling data is the crystal pulling data in the last single crystal production process; According to the reference crystal pulling data and the target crystal pulling data, a target seeding power and a target equal-diameter power are obtained; The single crystal furnace is power controlled according to the target seeding power and the target equal-diameter power.

2. The method according to claim 1, characterized in that The step of obtaining a target seeding power and a target equal-diameter power according to the reference crystal pulling data and the target crystal pulling data includes: Inputting the reference crystal pulling data and the target crystal pulling data into a power adjustment model to obtain the power adjustment parameters, wherein the power adjustment parameters include a seeding power adjustment amount and an equal diameter power adjustment amount; The preset seeding power is adjusted based on the seeding power adjustment amount to obtain the target seeding power, and the preset equal-diameter power is adjusted based on the equal-diameter power adjustment amount to obtain the target equal-diameter power.

3. The method according to claim 2, characterized in that The extracting reference crystal pulling data from the historical crystal pulling data comprises: Classifying the historical crystal pulling data based on the data type of the crystal pulling data to obtain multiple types of initial crystal pulling data; For any type of initial crystal pulling data, extract the median of the initial crystal pulling data; Based on the median, the reference crystal pulling data is determined.

4. The method according to claim 2, characterized in that: Before inputting the reference crystal pulling data and the target crystal pulling data into the power prediction model, the method further includes: Based on the historical crystal pulling data and the reference crystal pulling data, parameters of an initial power adjustment model are fitted to obtain the power adjustment model; the initial power adjustment model is used to characterize the mapping relationship between the historical crystal pulling data and the power adjustment parameters.

5. The method according to claim 4, characterized in that The initial power adjustment model includes a first function and a second function, wherein the first function is used to determine the seeding power adjustment amount, and the second function is used to determine the equal-diameter power adjustment amount. The power adjustment model is obtained by performing parameter fitting on the initial power adjustment model based on the historical crystal pulling data and the reference crystal pulling data, including: The historical crystal pulling data are sorted from large to small according to the single crystal survival rate, and the first M target crystal pulling data are extracted; wherein M is an integer greater than 2; The data related to the first function among the first M target crystal pulling data and the reference crystal pulling data are brought into the first function, and the first function is fitted. Also, the data related to the second function among the first M target crystal pulling data and the reference crystal pulling data are brought into the second function, and the second function is fitted to obtain the power adjustment model.

6. The method according to claim 5, characterized in that The step of inputting the reference crystal pulling data and the target crystal pulling data into a power adjustment model to obtain the power adjustment parameter includes: Input data related to the first function in the reference crystal pulling data and the target crystal pulling data into a first function to obtain the seeding power adjustment amount; The data related to the second function in the reference crystal pulling data and the target crystal pulling data are input into the second function to obtain the equal-diameter power adjustment amount.

7. The method according to claim 5, characterized in that After obtaining the power adjustment model, the method further includes: The remaining data in the historical crystal pulling data are used to perform parameter fitting verification on the first function and the second function.

8. A single crystal furnace, characterized in that: It includes a furnace body and a control system, and the control system includes: Memory for storing computer programs; A processor, configured to execute the computer program to implement the method according to any one of claims 1 to 7.

9. A computer-readable storage medium, characterized in that: A computer program is stored thereon, and the computer program is executed by a processor to implement the method according to any one of claims 1 to 7.

10. A computer program product, characterized in that The invention comprises a computer program, which implements the method according to any one of claims 1 to 7 when being executed by a controller.

Images