Metal wire photolithography detection method, device, medium and terminal

Abstract

The present application provides a metal line lithography detection method, device, medium and terminal, the method comprising: performing OPC correction on the obtained design layout to obtain a corrected layout; determining the metal line pattern to be detected based on the corrected layout; performing lithography simulation on the corrected layout to obtain a metal line lithography simulation pattern corresponding to the metal line pattern to be detected; performing a curvature-based regional detection operation on the metal line lithography simulation pattern to obtain a corrected layout that meets the metal line pattern requirements. The present application achieves more comprehensive metal line pattern detection and improves detection accuracy through a curvature-based regional detection operation.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a photolithography detection method, device, medium and terminal for metal wires. Background Art

[0002] During the chip manufacturing process, the diffraction effect of light can cause differences between the graphics projected on the actual silicon wafer and the designed target layout during the chip lithography process. This phenomenon is called the Optical Proximity Effect.

[0003] For the endpoints of the metal wires, the exposed pattern will become approximately semicircular due to the optical proximity effect. The metal wire pattern after optical proximity correction must meet the requirement that the size of the long side to side of the position far from the endpoint of the metal wire pattern exceeds the set threshold to prevent disconnection in the subsequent chip process, and meet the requirement that the approximately semicircular pattern near the endpoint of the metal wire pattern is more in line with the target layout of the design.

[0004] However, existing metal line lithography detection only uses a fixed length to distinguish areas of opposite side sizes. If there are metal lines of different sizes in a layout, this method will affect the detection accuracy. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a metal wire lithography detection method, device, medium and terminal, which are used to solve the problem of low accuracy of the metal wire detection method in the prior art.

[0006] To achieve the above-mentioned purpose and other related purposes, the first aspect of the present application provides a metal line lithography detection method, comprising: performing OPC correction on the obtained design layout to obtain a corrected layout; based on the corrected layout, determining the metal line pattern to be detected; performing lithography simulation on the corrected layout to obtain a metal line lithography simulation pattern corresponding to the metal line pattern to be detected; performing a curvature-based regional detection operation on the metal line lithography simulation pattern to obtain a corrected layout that meets the metal line pattern requirements.

[0007] In some embodiments of the first aspect of the present application, based on the corrected layout, the specific process of determining the metal wire pattern to be detected includes: determining the metal wire pattern that meets the metal wire pattern detection conditions in the corrected layout as the metal wire pattern to be detected; wherein the metal wire pattern detection conditions include: the length of one side of the metal wire pattern is not greater than a set first length threshold, and the lengths of the two adjacent sides of the side are not less than a set second length threshold.

[0008] In some embodiments of the first aspect of the present application, a curvature-based regional detection operation is performed on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern, including: obtaining the edge curvature distribution of the metal wire lithography simulation pattern; determining a first detection range and a second detection range based on the edge curvature distribution; performing an area ratio detection on the metal wire lithography simulation pattern based on the first detection range, and performing an opposite side size detection on the metal wire lithography simulation pattern based on the second detection range; when a result that passes the area ratio detection and a result that passes the opposite side size detection are obtained, the revised layout is output as a revised layout that meets the requirements of the metal wire pattern.

[0009] In some embodiments of the first aspect of the present application, the specific method of obtaining the edge curvature distribution of the metal wire lithography simulation pattern includes: selecting multiple calculation points on the edge of the metal wire lithography simulation pattern according to set intervals, and calculating the curvature of each calculation point; outputting the curvatures of all calculation points as the edge curvature distribution of the metal wire lithography simulation pattern.

[0010] In some embodiments of the first aspect of the present application, the specific process of determining the first detection range and the second detection range according to the edge curvature distribution includes: according to a set curvature threshold, based on the curvature of multiple selected calculation points, determining multiple division reference points among the multiple calculation points; based on the metal wire lithography simulation graphics and the design layout, determining the first detection range and the second detection range by comparing the curvature with the division reference points.

[0011] In some embodiments of the first aspect of the present application, the specific process of performing area ratio detection on the metal wire lithography simulation pattern based on the first detection range includes: obtaining the area ratio of the first detection range based on the calculated area of ​​the metal wire lithography simulation pattern within the first detection range and the area of ​​the design layout within the first detection range; when the area ratio of the first detection range is less than the set area threshold, obtaining a result of failing the area ratio detection; when the area ratio of the first detection range is not less than the set area threshold, obtaining a result of passing the area ratio detection.

[0012] In some embodiments of the first aspect of the present application, based on the second detection range, the specific process of performing edge size detection on the metal wire lithography simulation pattern includes: selecting multiple evaluation point pairs on the edge of the metal wire lithography simulation pattern within the second detection range according to a set step size, and measuring the distance of each evaluation point pair; when the distance of at least one evaluation point pair is less than the set edge size threshold, a result of failing the edge size detection is obtained; when the distances of all evaluation point pairs are not less than the set edge size threshold, a result of passing the edge size detection is obtained.

[0013] To achieve the above-mentioned purpose and other related purposes, the second aspect of the present application provides a metal line lithography detection device, including: an OPC correction module, used to perform OPC correction on the obtained design layout to obtain a corrected layout; a determination module, used to determine the metal line to be detected based on the corrected layout; a lithography simulation module, used to perform lithography simulation on the corrected layout to obtain a metal line lithography simulation pattern corresponding to the metal line pattern to be detected; a detection module, used to perform a curvature-based regional detection operation on the metal line lithography simulation pattern to obtain a corrected layout that meets the metal line pattern requirements.

[0014] To achieve the above-mentioned purpose and other related purposes, the third aspect of the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the photolithography detection method of the metal line is implemented.

[0015] To achieve the above-mentioned purpose and other related purposes, the fourth aspect of the present application provides an electronic terminal, including a memory, a processor and a computer program stored in the memory; the processor executes the computer program to implement the metal line lithography detection method.

[0016] As described above, the metal wire lithography detection method, device, medium and terminal of the present application have the following beneficial effects:

[0017] The present application achieves more comprehensive metal wire pattern detection and improves detection accuracy through curvature-based regional detection operations. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram showing the process of a photolithography inspection method for metal lines in one embodiment of the present application.

[0019] Figure 2 Shown is a schematic diagram of a method for determining a metal wire pattern in a specific embodiment of the present application.

[0020] Figure 3 Shown is a schematic diagram of calculation point selection in an embodiment of the present application.

[0021] Figure 4 Shown is a schematic diagram of area division in an embodiment of the present application.

[0022] Figure 5 Shown is a schematic diagram of edge size detection in one embodiment of the present application.

[0023] Figure 6 Shown is a schematic block diagram of a photolithography inspection device for metal lines in one embodiment of the present application.

[0024] Figure 7Shown is a schematic diagram of the structure of an electronic terminal in one embodiment of the present application. DETAILED DESCRIPTION

[0025] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0026] In the embodiments of the present application, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first length threshold and the second length threshold are only used to distinguish different length thresholds, and do not limit their order. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0027] It should be noted that in the embodiments of the present application, words such as "exemplary" or "for example" represent examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0028] In the embodiments of the present application, "at least one" refers to one or more, and "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can represent: a, b, c, ab, ac, bc or abc, where a, b, c can be single or multiple.

[0029] To facilitate understanding of the embodiments of the present application, first Figure 1 Detailed description. Figure 1 The schematic diagram of the process of a metal line photolithography detection method in an embodiment of the present invention is shown. The metal line photolithography detection method in this embodiment mainly includes the following steps:

[0030] Step S11: Perform OPC correction on the obtained design layout to obtain a corrected layout.

[0031] It should be noted that the design layout is the chip design layout. Optical proximity correction (OPC) is a key technology used to improve the quality of lithography images and the ability to restore patterns. It compensates for imaging distortion during the lithography process by preprocessing the pattern on the mask.

[0032] Step S12: based on the revised layout, determine the metal line pattern to be detected; perform photolithography simulation on the revised layout to obtain a metal line photolithography simulation pattern corresponding to the metal line pattern to be detected.

[0033] In one embodiment, based on the corrected layout, the specific process of determining the metal wire pattern to be detected includes: determining the metal wire pattern that meets the metal wire pattern detection conditions in the corrected layout as the metal wire pattern to be detected; wherein the metal wire pattern detection conditions include: the length of one side of the metal wire pattern is not greater than a set first length threshold, and the lengths of the two adjacent sides of the side are not less than a set second length threshold.

[0034] It should be noted that the first length threshold and the second length threshold are set according to chip process requirements. The edge whose length is not greater than the set first length threshold is generally the edge at the endpoint of the metal line pattern. The endpoint of the metal line pattern refers to the starting and ending positions of the metal line pattern in the chip design layout.

[0035] For example, Figure 2 The length of one side A of the metal wire pattern is not greater than the first length threshold a, that is, length_A a. It can be seen that edge A is Figure 2 The edge at the end point of the metal wire pattern. Edge A has two adjacent edges, namely edge B and edge C. The length of edge B, length_B, is not less than the set second length threshold b. The length of edge C, length_C, is not less than the set second length threshold b, that is, length_B. b,length_C b. Therefore, Figure 2 The metal line pattern in can be confirmed as the metal line pattern to be detected.

[0036] In one embodiment, a lithography simulation is performed on the corrected layout to obtain a metal wire lithography simulation pattern corresponding to the metal wire pattern to be detected. The specific process includes: performing a lithography simulation on the corrected layout to obtain a lithography simulation image; and determining the metal wire lithography simulation pattern corresponding to the metal wire pattern to be detected in the lithography simulation image.

[0037] It should be noted that photolithography simulation is the process of simulating the process of light irradiating the photoresist on the silicon wafer through the mask during the photolithography process using computer software, and the process of the photoresist chemically reacting under the irradiation of light and forming a pattern. Through simulation, the designer can intuitively see the impact of the changes in various parameters in the photolithography process on the final result, thereby optimizing the process parameters and improving the quality and efficiency of photolithography. The present invention can use existing computer software to perform photolithography simulation, and the present invention is not limited to this.

[0038] It should also be noted that after the design layout is subjected to OPC correction and lithography simulation by computer software, a corrected layout, lithography simulation image and design layout that overlap each other will be automatically generated. Therefore, there is a corresponding relationship between the corrected layout, the lithography simulation image and the design layout. When the metal wire pattern to be tested is confirmed in the corrected layout, the metal wire pattern corresponding to the metal wire pattern to be tested in the lithography simulation image can be determined in the design layout. For example, Figures 3 to 5 The positional relationship between the metal line pattern to be tested, the corresponding pattern in the design layout, the metal line pattern to be tested, and the metal line lithography simulation pattern after OPC correction and lithography simulation is shown (in Figures 3 to 5 In the figure, the metal line pattern to be detected in the design layout corresponds to the pattern referred to as the design layout metal line pattern).

[0039] Step S13: performing a curvature-based region detection operation on the metal line lithography simulation pattern to obtain a revised layout that meets the metal line pattern requirements.

[0040] It should be noted that the metal line pattern requirements include that the area of ​​the metal line pattern close to the end point exposed by the optical proximity effect fits the design pattern, and the opposite side size of the area far from the end point exceeds the set opposite side size threshold to prevent disconnection in subsequent chip processes.

[0041] In one embodiment, a curvature-based regional detection operation is performed on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern, including: obtaining the edge curvature distribution of the metal wire lithography simulation pattern; determining a first detection range and a second detection range based on the edge curvature distribution; performing an area ratio detection on the metal wire lithography simulation pattern based on the first detection range, and performing an opposite side size detection on the metal wire lithography simulation pattern based on the second detection range; when a result that passes the area ratio detection and a result that passes the opposite side size detection are obtained, the revised layout is output as a revised layout that meets the requirements of the metal wire pattern; when a result that fails the area ratio detection and / or a result that fails the opposite side size detection is obtained, the design layout continues to be OPC corrected until a revised layout that meets the requirements of the metal wire pattern is obtained.

[0042] In one embodiment, a specific method for obtaining the edge curvature distribution of the metal wire lithography simulation pattern includes: selecting multiple calculation points on the edge of the metal wire lithography simulation pattern according to a set interval, and calculating the curvature of each calculation point; outputting the curvature of all calculation points as the edge curvature distribution of the metal wire lithography simulation pattern.

[0043] Specifically, Figure 3 As shown, multiple calculation points are selected on the edge of the metal line lithography simulation pattern according to the set interval. It should be noted that the present invention does not limit the specific value of the interval, and those skilled in the art can set it according to actual needs.

[0044] Furthermore, for the calculation point (x, y), the curvature of the calculation point is calculated using the following formula 1:

[0045] ;(Formula 1)

[0046] Among them, k is the curvature, x is the horizontal coordinate of the calculation point, and y is the vertical coordinate of the calculation point. is the first derivative of y with respect to x, indicating the slope, is the second derivative of y with respect to x, representing the rate of change of slope.

[0047] Furthermore, after calculating the curvatures of all selected calculation points, the curvatures of all selected calculation points are output as edge curvature distribution of the metal wire lithography simulation pattern.

[0048] In one embodiment, according to the edge curvature distribution, the specific process of determining the first detection range and the second detection range includes: according to a set curvature threshold, based on the curvature of the selected multiple calculation points, determining multiple division reference points among the multiple calculation points; based on the metal wire lithography simulation pattern and the design layout (specifically, the metal wire pattern to be detected corresponding to the metal wire pattern in the design layout), determining the first detection range and the second detection range by comparing the curvature with the division reference points.

[0049] Specifically, the specific value of the curvature threshold C is generally set to C = 0.95 × (2 / length); where length is the length of the edge at the end point of the metal wire (for example Figure 2 Those skilled in the art may also set the curvature threshold to other values ​​according to actual needs, and the present invention is not limited to this.

[0050] Furthermore, among the selected multiple calculation points, according to a set curvature threshold, based on the curvature of the selected multiple calculation points, the calculation points that meet the reference point requirements are determined as the division reference points.

[0051] The requirements for the reference points include: the curvature of the calculated point is not less than the set curvature threshold, and the curvature of one adjacent calculated point is less than the curvature of the calculated point and less than the set curvature threshold, and the curvature of another adjacent calculated point is greater than the curvature of the calculated point. For different shapes of metal line lithography simulation patterns, the number of divided reference points is different. The number of divided reference points n 2.

[0052] For example, if Figure 3 As shown, the curvature of calculation point 1 is less than the set curvature threshold, the curvature of calculation point 2 is not less than the set curvature threshold, the curvature of calculation point 3 is greater than the curvature of calculation point 2, and calculation point 1 and calculation point 3 are adjacent calculation points of calculation point 2. According to the above conditions, it can be judged that calculation point 2 meets the reference point requirements, so calculation point 2 is the division reference point.

[0053] Furthermore, the range corresponding to the graphic portion of the metal wire lithography simulation graphic whose curvature is greater than the curvature of at least one dividing reference point is determined as the second detection range; the first detection range is determined according to the dividing reference points and the endpoints of the metal wire graphic corresponding to the metal wire graphic to be detected in the design layout; wherein the curvature of all points on the edge of the graphic portion of the metal wire lithography simulation graphic within the first detection range is smaller than the curvature of the dividing reference point.

[0054] It should be understood that the closer the point is to the end point of the metal wire pattern, the smaller the curvature is, and the farther the point is from the end point, the larger the curvature is.

[0055] For example, Figure 4 The curvature of all points in the middle part of the metal line photolithography simulation pattern is greater than the curvature of at least one of the four dividing reference points, so the range corresponding to the middle part of the metal line photolithography simulation pattern is determined as the second detection range. Figure 4 As shown, two first detection ranges are determined according to the division reference points 1 to 4 and the two end points of the metal line pattern corresponding to the metal line pattern to be detected in the design layout. Figure 4 The curvature of all points on the edge of the pattern portion of the metal line lithography simulation pattern within the first detection range on the left side is smaller than the curvature of the division reference point 1 and smaller than the curvature of the division reference point 2, Figure 4 The curvature of all points on the edge of the pattern portion of the metal line lithography simulation pattern within the first detection range on the right side is smaller than the curvature of the division reference point 3 and smaller than the curvature of the division reference point 4.

[0056] In one embodiment, if Figure 4As shown, based on the first detection range, the specific process of performing area ratio detection on the metal wire lithography simulation pattern includes: obtaining the area ratio of the first detection range based on the calculated area of ​​the metal wire lithography simulation pattern within the first detection range and the area of ​​the design layout (specifically, the metal wire pattern corresponding to the metal wire pattern to be detected in the design layout) within the first detection range; when the area ratio of the first detection range is less than the set area threshold, obtaining a result of failing the area ratio detection; when the area ratio of the first detection range is not less than the set area threshold, obtaining a result of passing the area ratio detection.

[0057] It should be noted that those skilled in the art can set the area threshold according to chip process requirements, and the present invention is not limited to this.

[0058] It should also be noted that the present invention divides the detection area, performs area detection on the area close to the endpoint of the metal wire graphic, and performs side size detection on the area far from the endpoint of the metal wire graphic. Compared with the existing detection method, the present invention is more comprehensive and has higher detection accuracy.

[0059] In one embodiment, based on the second detection range, the specific process of performing edge size detection on the metal wire lithography simulation pattern includes: selecting multiple evaluation point pairs on the edge of the metal wire lithography simulation pattern within the second detection range according to a set step size, and measuring the distance of each evaluation point pair; when the distance of at least one evaluation point pair is less than the set edge size threshold, a result of failing the edge size detection is obtained; when the distances of all evaluation point pairs are not less than the set edge size threshold, a result of passing the edge size detection is obtained.

[0060] Specifically, Figure 5 As shown, the metal line lithography simulation pattern has two opposite sides in the second detection range. According to the set step size, the same number of corresponding evaluation points are selected on the two sides, thereby forming a plurality of evaluation point pairs. For each evaluation point pair, one point in the evaluation point pair is located on one side of the second detection area, and the other point is located on the opposite side of the side. For example, Figure 5 The evaluation point a and the evaluation point b in are an evaluation point pair. The distance of the evaluation point pair is the distance between the two evaluation points in the evaluation point pair.

[0061] It should be noted that those skilled in the art may set the specific value of the step length according to actual needs, and set the specific value of the edge size threshold according to chip process requirements, and the present invention does not limit this.

[0062] Figure 6 is a schematic block diagram of a metal wire photolithography detection device provided in an embodiment of the present application. Figure 6As shown, the metal wire lithography detection device 6 includes:

[0063] An OPC correction module 61 is used to perform OPC correction on the obtained design layout to obtain a corrected layout;

[0064] A determination module 62, connected to the OPC correction module 61, is used to determine the metal line to be detected based on the corrected layout;

[0065] The photolithography simulation module 63 is connected to the OPC correction module 61 and the determination module 62 respectively, and is used to perform photolithography simulation on the corrected layout to obtain a metal line photolithography simulation pattern corresponding to the metal line pattern to be detected;

[0066] The detection module 64 is connected to the photolithography simulation module 63 and is used to perform a curvature-based regional detection operation on the metal line photolithography simulation pattern to obtain a revised layout that meets the metal line pattern requirements.

[0067] It should be understood that the specific process of each module executing the above corresponding steps has been described in detail in the above method embodiment, and for the sake of brevity, it will not be repeated here.

[0068] It should also be understood that the division of modules in the embodiments of the present application is schematic and is only a logical function division. There may be other division methods in actual implementation. In addition, each functional module in each embodiment of the present application may be integrated into a processor, or may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated modules may be implemented in the form of hardware or in the form of software functional modules.

[0069] In one embodiment, based on the corrected layout, the specific process of determining the metal wire pattern to be detected includes: determining the metal wire pattern that meets the metal wire pattern detection conditions in the corrected layout as the metal wire pattern to be detected; wherein the metal wire pattern detection conditions include: the length of one side of the metal wire pattern is not greater than a set first length threshold, and the lengths of the two adjacent sides of the side are not less than a set second length threshold.

[0070] In one embodiment, a curvature-based regional detection operation is performed on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern, including: obtaining the edge curvature distribution of the metal wire lithography simulation pattern; determining a first detection range and a second detection range based on the edge curvature distribution; performing an area ratio detection on the metal wire lithography simulation pattern based on the first detection range, and performing an opposite side size detection on the metal wire lithography simulation pattern based on the second detection range; when a result that passes the area ratio detection and a result that passes the opposite side size detection are obtained, the revised layout is output as a revised layout that meets the requirements of the metal wire pattern.

[0071] In one embodiment, a specific method for obtaining the edge curvature distribution of the metal wire lithography simulation pattern includes: selecting multiple calculation points on the edge of the metal wire lithography simulation pattern according to a set interval, and calculating the curvature of each calculation point; outputting the curvature of all calculation points as the edge curvature distribution of the metal wire lithography simulation pattern.

[0072] In one embodiment, according to the edge curvature distribution, the specific process of determining the first detection range and the second detection range includes: according to a set curvature threshold, based on the curvature of the selected multiple calculation points, determining multiple division reference points among the multiple calculation points; based on the metal wire lithography simulation graphics and the design layout, determining the first detection range and the second detection range by comparing the curvature with the division reference points.

[0073] In one embodiment, based on the first detection range, the specific process of performing area ratio detection on the metal wire lithography simulation pattern includes: obtaining the area ratio of the first detection range based on the calculated area of ​​the metal wire lithography simulation pattern within the first detection range and the area of ​​the design layout within the first detection range; when the area ratio of the first detection range is less than the set area threshold, obtaining a result of failing the area ratio detection; when the area ratio of the first detection range is not less than the set area threshold, obtaining a result of passing the area ratio detection.

[0074] In one embodiment, based on the second detection range, the specific process of performing edge size detection on the metal wire lithography simulation pattern includes: selecting multiple evaluation point pairs on the edge within the second detection range of the metal wire lithography simulation pattern according to a set step size, and measuring the distance of each evaluation point pair; when the distance of at least one evaluation point pair is less than the set edge size threshold, a result of failing the edge size detection is obtained; when the distances of all evaluation point pairs are not less than the set edge size threshold, a result of passing the edge size detection is obtained.

[0075] Figure 7 is a schematic block diagram of an electronic terminal provided in an embodiment of the present application. Figure 7As shown, the electronic terminal includes: at least one processor 701, a memory 702, at least one network interface 703 and a user interface 705. The various components in the device are coupled together through a bus system 704. It can be understood that the bus system 704 is used to realize the connection and communication between these components. In addition to the data bus, the bus system 704 also includes a power bus, a control bus and a status signal bus. However, for the sake of clarity, Figure 7 In the specification, various buses are labeled as bus systems.

[0076] The user interface 705 may include a display, a keyboard, a mouse, a trackball, a click gun, keys, buttons, a touch pad or a touch screen.

[0077] It is understood that the memory 702 can be a volatile memory or a non-volatile memory, and can also include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), which is used as an external cache. By way of exemplary but not limiting explanation, many forms of RAM are available, such as static random access memory (SRAM), synchronous static random access memory (SSRAM). The memory described in the embodiments of the present invention is intended to include but is not limited to these and any other suitable categories of memory.

[0078] The memory 702 in the embodiment of the present invention is used to store various categories of data to support the operation of the electronic terminal 700. Examples of these data include: any executable program for operating on the electronic terminal 700, such as an operating system 7021 and an application 7022; the operating system 7021 includes various system programs, such as a framework layer, a core library layer, a driver layer, etc., for implementing various basic services and processing hardware-based tasks. The application 7022 can include various applications, such as a media player (Media Player), a browser (Browser), etc., for implementing various application services. The photolithography detection method of the metal line provided in the embodiment of the present invention can be included in the application 7022.

[0079] The method disclosed in the above embodiment of the present invention can be applied to the processor 701, or implemented by the processor 701. The processor 701 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit in the processor 701 or the instruction in the form of software. The above processor 701 may be a general processor, a digital signal processor (DSP, Digital Signal Processor), or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. The processor 701 can implement or execute the various methods, steps and logic block diagrams disclosed in the embodiment of the present invention. The general processor 701 may be a microprocessor or any conventional processor, etc. In combination with the steps of the accessory optimization method provided in the embodiment of the present invention, it can be directly embodied as a hardware decoding processor to execute, or it can be executed by a combination of hardware and software modules in the decoding processor. The software module can be located in a storage medium, which is located in a memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0080] In an exemplary embodiment, the electronic terminal 700 can be one or more application specific integrated circuits (ASIC), DSP, programmable logic device (PLD), complex programmable logic device (CPLD) to perform the aforementioned metal line lithography detection method.

[0081] According to the method provided in the embodiment of the present application, the present application also provides a computer program product, which includes: a computer program code, when the computer program code is run on a computer, the computer executes Figure 1 The photolithography inspection method of the metal line in the illustrated embodiment.

[0082] According to the method provided in the embodiment of the present application, the present application also provides a computer-readable storage medium, which stores a program code, and when the program code is run on a computer, the computer executes Figure 1 The photolithography inspection method of the metal line in the illustrated embodiment.

[0083] The terms "component", "module", "system", etc. used in this specification are used to represent computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a component can be, but is not limited to, a process, a processor, an object, an executable file, an execution thread, a program and / or a computer running on a processor. By way of illustration, both applications and computing devices running on a computing device can be components. One or more components may reside in a process and / or an execution thread, and a component may be located on a computer and / or distributed between two or more computers. In addition, these components may be executed from various computer-readable media having various data structures stored thereon. Components may, for example, communicate through local and / or remote processes according to signals having one or more data packets (e.g., data from two components interacting with another component between a local system, a distributed system and / or a network, such as the Internet interacting with other systems through signals).

[0084] Those of ordinary skill in the art will appreciate that the various illustrative logical blocks and steps described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0085] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0086] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0087] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0088] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0089] In the above embodiments, the functions of each functional unit can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions (programs). When the computer program instructions (programs) are loaded and executed on a computer, the process or function according to the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from a website site, computer, server or data center to another website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media integrated. Available media may be magnetic media (e.g., floppy disks, hard disks, tapes), optical media (e.g., high-density digital video discs (DVDs), or semiconductor media (e.g., solid state disks (SSDs)).

[0090] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including a number of instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the various embodiments of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, and other media that can store program codes.

[0091] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0092] In summary, the present application provides a metal wire lithography detection method, device, medium and terminal, the method comprising: performing OPC correction on the obtained design layout to obtain a corrected layout; determining the metal wire pattern to be detected based on the corrected layout; performing lithography simulation on the corrected layout to obtain a metal wire lithography simulation pattern corresponding to the metal wire pattern to be detected; performing a curvature-based regional detection operation on the metal wire lithography simulation pattern to obtain a corrected layout that meets the metal wire pattern requirements. The present application achieves more comprehensive metal wire pattern detection and improves detection accuracy through a curvature-based regional detection operation. Therefore, the present application effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0093] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A photolithography detection method for metal lines, characterized in that: include: Perform OPC correction on the obtained design layout to obtain a corrected layout; Based on the corrected layout, determine the metal line pattern to be tested; Performing photolithography simulation on the corrected layout to obtain a metal line photolithography simulation pattern corresponding to the metal line pattern to be detected; Performing a curvature-based regional detection operation on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern; wherein, performing a curvature-based regional detection operation on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern includes: obtaining the edge curvature distribution of the metal wire lithography simulation pattern; determining a first detection range and a second detection range according to the edge curvature distribution; performing an area ratio detection on the metal wire lithography simulation pattern based on the first detection range, and performing an opposite side size detection on the metal wire lithography simulation pattern based on the second detection range; when a result that passes the area ratio detection and a result that passes the opposite side size detection are obtained, outputting the revised layout as a revised layout that meets the requirements of the metal wire pattern; The specific process of performing area ratio detection on the metal wire photolithography simulation pattern based on the first detection range includes: obtaining an area ratio of the first detection range based on the calculated area of ​​the metal wire photolithography simulation pattern within the first detection range and the area of ​​the design layout within the first detection range; when the area ratio of the first detection range is less than a set area threshold, obtaining a result of failing the area ratio detection; when the area ratio of the first detection range is not less than the set area threshold, obtaining a result of passing the area ratio detection; Based on the second detection range, the specific process of performing edge size detection on the metal wire lithography simulation pattern includes: selecting multiple evaluation point pairs on the edge of the metal wire lithography simulation pattern within the second detection range according to the set step size, and measuring the distance of each evaluation point pair; when the distance of at least one evaluation point pair is less than the set edge size threshold, a result of failing the edge size detection is obtained; when the distances of all evaluation point pairs are not less than the set edge size threshold, a result of passing the edge size detection is obtained.

2. The photolithography detection method of metal wire according to claim 1, characterized in that: Based on the corrected layout, the specific process of determining the metal line pattern to be tested includes: Determine the metal line pattern in the modified layout that meets the metal line pattern detection condition as the metal line pattern to be detected; Wherein, the metal wire pattern detection conditions include: The length of one side of the metal wire pattern is not greater than a set first length threshold, and the lengths of two adjacent sides of the side are not less than a set second length threshold.

3. The photolithography detection method of metal wire according to claim 1, characterized in that: The specific method of obtaining the edge curvature distribution of the metal line lithography simulation pattern includes: Selecting a plurality of calculation points on the edge of the metal line photolithography simulation pattern at set intervals, and calculating the curvature of each calculation point; The curvatures of all calculated points are output as the edge curvature distribution of the metal line lithography simulation pattern.

4. The photolithography detection method of metal wire according to claim 3, characterized in that: According to the edge curvature distribution, the specific process of determining the first detection range and the second detection range includes: According to a set curvature threshold, based on the curvatures of the selected multiple calculation points, a plurality of division reference points are determined from the multiple calculation points; Based on the metal line lithography simulation pattern and the design layout, the first detection range and the second detection range are determined by comparing the curvature with the division reference points.

5. A photolithography detection device for metal wires, characterized in that: include: An OPC correction module is used to perform OPC correction on the obtained design layout to obtain a corrected layout; A determination module, used for determining the metal lines to be detected based on the corrected layout; A photolithography simulation module is used to perform photolithography simulation on the modified layout to obtain a metal line photolithography simulation pattern corresponding to the metal line pattern to be detected; A detection module, used for performing a curvature-based regional detection operation on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern; wherein, performing a curvature-based regional detection operation on the metal wire lithography simulation pattern to obtain a revised layout that meets the requirements of the metal wire pattern includes: obtaining an edge curvature distribution of the metal wire lithography simulation pattern; determining a first detection range and a second detection range according to the edge curvature distribution; performing an area ratio detection on the metal wire lithography simulation pattern based on the first detection range, and performing an opposite side size detection on the metal wire lithography simulation pattern based on the second detection range; when a result that passes the area ratio detection and a result that passes the opposite side size detection are obtained, outputting the revised layout as a revised layout that meets the requirements of the metal wire pattern; The specific process of performing area ratio detection on the metal wire photolithography simulation pattern based on the first detection range includes: obtaining an area ratio of the first detection range based on the calculated area of ​​the metal wire photolithography simulation pattern within the first detection range and the area of ​​the design layout within the first detection range; when the area ratio of the first detection range is less than a set area threshold, obtaining a result of failing the area ratio detection; when the area ratio of the first detection range is not less than the set area threshold, obtaining a result of passing the area ratio detection; Based on the second detection range, the specific process of performing edge size detection on the metal wire lithography simulation pattern includes: selecting multiple evaluation point pairs on the edge of the metal wire lithography simulation pattern within the second detection range according to the set step size, and measuring the distance of each evaluation point pair; when the distance of at least one evaluation point pair is less than the set edge size threshold, a result of failing the edge size detection is obtained; when the distances of all evaluation point pairs are not less than the set edge size threshold, a result of passing the edge size detection is obtained.

6. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 4 is implemented.

7. An electronic terminal comprising a memory, a processor and a computer program stored in the memory, characterized in that: The processor executes the computer program to implement the method according to any one of claims 1 to 4.

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