Packaging structure and manufacturing method thereof, and packaging module

Abstract

The present invention provides a packaging structure and a manufacturing method thereof, and a packaging module, wherein the packaging structure includes: a power terminal conductive part is arranged on a substrate; a packaging body is arranged on the substrate and encapsulates a first area of ​​the power terminal conductive part, and a first through-hole structure exposes a second area of ​​the power terminal conductive part; a chip structure is located in the packaging body; the power terminal structure is penetrated in the first through-hole structure, the first end of the power terminal structure is connected to the second area of ​​the power terminal conductive part and is conductively connected to the chip structure, and the second end of the power terminal structure penetrates the first through-hole structure. The technical solution of the present application effectively solves the problem of limited application scenarios of packaging structures in related technologies.

Description

Technical Field

[0001] The present invention relates to the technical field of packaging structures, and in particular to a packaging structure and a manufacturing method thereof, and a packaging module. Background Art

[0002] The packaging structure generally includes a housing, a chip, a current input terminal, a current input terminal conductive plate, a current output terminal, a current output terminal conductive plate, and a copper-clad ceramic substrate. The chip is arranged on the copper-clad ceramic substrate, and the current input terminal and the current output terminal are both connected to the chip, so that the current can flow. The housing cover is arranged on the copper-clad ceramic substrate.

[0003] In the prior art, the current input terminals and current output terminals of the packaging structure manufactured by the transfer molding process can only pass through the side of the plastic packaging body, so that the external connectors can only be connected to the current input terminals and current output terminals from the side of the packaging structure, which limits the application scenarios of the packaging structure. Summary of the invention

[0004] The main purpose of the present invention is to provide a packaging structure and a manufacturing method thereof, and a packaging module to solve the problem of limited application scenarios of the packaging structure in the related art.

[0005] In order to achieve the above-mentioned purpose, according to a first aspect of the present invention, a packaging structure is provided, including: a substrate, on which a power terminal conductive portion is arranged; a packaging body, which is arranged on the substrate and encapsulates a first area of ​​the power terminal conductive portion, and a first through-hole structure is arranged on the packaging body, and the first through-hole structure exposes a second area of ​​the power terminal conductive portion; a chip structure, which is arranged on the substrate and located in the packaging body; a power terminal structure, which is passed through the first through-hole structure, a first end of the power terminal structure is connected to the second area of ​​the power terminal conductive portion and is conductively connected to the chip structure, and a second end of the power terminal structure passes through the first through-hole structure.

[0006] Further, the power terminal conductive portion comprises a first mounting block, the first mounting block is arranged on the substrate, and the second area of ​​the power terminal conductive portion is located on the first mounting block.

[0007] Further, a projection of the first end of the power terminal structure on the substrate is located within a projection area of ​​the first through hole structure on the substrate.

[0008] Furthermore, the chip structure includes a first chip, and the packaging structure further includes a connection structure, and the connection structure is arranged between the first chip and the power terminal conductive part.

[0009] Furthermore, the connection structure includes a first connection part, a second connection part and a third connection part, the third connection part is connected between a side of the first connection part facing the second connection part and a side of the second connection part facing the first connection part, the first connection part is connected to a surface of the chip structure away from the substrate, and the second connection part is arranged on the conductive part of the power terminal.

[0010] Further, the third connection portion includes a connection bridge, and in a direction from the first connection portion to the second connection portion, a distance between a side of the connection bridge facing the substrate and the substrate first increases and then decreases.

[0011] Furthermore, the chip structure includes multiple first chips, the first connection part includes multiple first connection blocks and at least one second connection block, each first connection block is connected to a corresponding first chip, and a second connection block is arranged between any two first connection blocks.

[0012] Further, the plurality of first chips are arranged at intervals along the first direction, and in the first direction, the distance between the second connection block on a side facing the substrate and the substrate first increases and then decreases.

[0013] Furthermore, the packaging structure also includes a control terminal conductive part and a control terminal structure, the control terminal conductive part is arranged on the substrate, the first area of ​​the control terminal conductive part is located in the packaging body, a second through hole structure is arranged on the packaging body, the second through hole structure exposes the second area of ​​the control terminal conductive part, the control terminal structure is penetrated in the second through hole structure, the first end of the control terminal structure is connected to the second area of ​​the control terminal conductive part and is conductively connected to the chip structure, and the second end of the control terminal structure penetrates out of the second through hole structure.

[0014] Further, the control terminal conductive portion includes a second mounting block arranged on the substrate, and the second area of ​​the control terminal conductive portion is located on the second mounting block.

[0015] Furthermore, the chip structure also includes a second chip, and the first chip and the second chip are arranged on the substrate with an interval; the power terminal structure includes a first power terminal, a second power terminal and a third power terminal, the power terminal conductive part includes a first power terminal conductive unit, a second power terminal conductive unit and a third power terminal conductive unit, the first power terminal is arranged on the first power terminal conductive unit, the second power terminal is arranged on the second power terminal conductive unit, and the third power terminal is arranged on the third power terminal conductive unit; the surface of the first chip away from the substrate is conductively connected to the first power terminal, the surface of the first chip facing the substrate is conductively connected to the second power terminal, the surface of the second chip away from the substrate is conductively connected to the second power terminal, and the surface of the second chip facing the substrate is conductively connected to the third power terminal.

[0016] Further, the first through hole structure is located at an end portion of the substrate.

[0017] Furthermore, the cross-section of the first through-hole structure is polygonal or circular, the first power terminal includes a first connecting section, a second connecting section and an extension section, the first connecting section is connected to the first power terminal conductive unit, and the second connecting section is located in the first through-hole structure and is in contact with a partial structure of the hole wall of the first through-hole structure.

[0018] Furthermore, the packaging structure further includes a sealing portion, which is filled and disposed in the first through-hole structure to seal a gap between the first through-hole structure and the power terminal structure.

[0019] According to a second aspect of the present invention, there is provided a packaging module, comprising a plurality of packaging structures arranged at intervals, wherein the packaging structure is the above-mentioned packaging structure.

[0020] According to a third aspect of the present invention, a method for manufacturing a packaging structure is provided, for manufacturing the above-mentioned packaging structure, the manufacturing method comprising:

[0021] obtaining a substrate and a power terminal conductive portion;

[0022] connecting the chip structure to the substrate;

[0023] Forming a package body on the substrate, and forming a first through-hole structure on the package body, so that the package body encapsulates the first area of ​​the power terminal conductive part, and the second area of ​​the power terminal conductive part is exposed through the first through-hole structure;

[0024] connecting the power terminal structure to the second region of the power terminal conductive portion;

[0025] A sealing portion is disposed in a gap between the first through-hole structure and the power terminal structure.

[0026] Furthermore, the step of forming a package body on the substrate includes:

[0027] The mold is arranged on the substrate, and a package body is formed by injection molding in the mold;

[0028] The mold comprises a main body having an injection cavity, an injection hole communicating with the injection cavity is arranged on the top wall of the main body, a separation cylinder is arranged in the injection cavity, and the separation cylinder is used to form a first through hole structure.

[0029] By applying the technical solution of the present invention, a power terminal conductive part is provided on the substrate. A package is also provided on the substrate, and the package encapsulates the first area of ​​the power terminal conductive part. A first through-hole structure is provided on the package, and the first through-hole structure exposes the second area of ​​the power terminal conductive part. A chip structure is provided on the substrate, and the chip structure is located in the package. The power terminal structure is penetrated in the first through-hole structure, the first end of the power terminal structure is connected to the second area of ​​the power terminal conductive part, the first end of the power terminal structure is conductively connected to the chip structure, and the second end of the power terminal structure penetrates the first through-hole structure. Through the above-mentioned arrangement, the substrate can support the power terminal conductive part. The package can encapsulate the first area of ​​the power terminal conductive part, and the chip structure is located in the package, so that the package can protect the first area of ​​the power terminal conductive part and the chip structure. The first through-hole structure exposes the second area of ​​the power terminal conductive part, which makes it easy to connect the power terminal structure with the second area of ​​the power terminal conductive part, and also enables the power terminal structure to pass through the package body from the side of the package body away from the substrate, and then can select different structural forms of power terminal structures according to whether the external connector is located on the side of the surface of the package body away from the substrate or the external connector is located on the side of the package body, that is, the part of the power terminal structure located outside the package body extends toward the middle of the package body or toward the side of the package body as needed, making the connection method between the power terminal structure and the external connector more flexible, expanding the application scenarios of the package structure, and making the package structure more versatile. Therefore, the technical solution of the present application effectively solves the problem of limited application scenarios of the package structure in the related art. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0031] Figure 1 A schematic diagram of a three-dimensional structure of an embodiment of a packaging structure according to the present invention is shown;

[0032] Figure 2 Shows Figure 1 A schematic diagram of the decomposition structure of the package structure;

[0033] Figure 3 Shows Figure 2 A local enlarged schematic diagram of the packaging structure at A;

[0034] Figure 4 Shows Figure 2 A schematic diagram of a three-dimensional structure of a packaging structure when the packaging body is not connected;

[0035] Figure 5 Shows Figure 1A schematic top view of a substrate of a packaging structure;

[0036] Figure 6 Shows Figure 5 A schematic diagram of the three-dimensional structure of the chip conductive part and the power terminal conductive part of the packaging structure;

[0037] Figure 7 Shows Figure 1 A schematic diagram of a three-dimensional structure of a connection structure of a packaging structure;

[0038] Figure 8 Shows Figure 7 A bottom view schematic diagram of a connection structure;

[0039] Fig. 9 Shows Figure 8 A schematic cross-sectional view of the connection structure at AA;

[0040] Fig.10 Shows Figure 8 A cross-sectional schematic diagram of the connection structure at BB;

[0041] Fig.11 Shows Figure 1 A schematic diagram of current flow direction when current flows into the package structure from the second power terminal;

[0042] Fig.12 A schematic diagram showing a three-dimensional structure of a mold according to an embodiment of a method for manufacturing a packaging structure of the present invention;

[0043] Fig.13 Shows Fig.11 A schematic diagram of the structure of the mold viewed from above;

[0044] Fig.14 Shows Fig.13 A schematic cross-sectional view of the mold at CC;

[0045] Fig.15 A schematic diagram of the three-dimensional structure of a packaging module according to the present invention is shown;

[0046] Fig.16 A schematic flow chart of a method for manufacturing a packaging structure according to the present invention is shown.

[0047] The above drawings include the following reference numerals:

[0048] 10. substrate; 11. chip conductive part; 111. first chip conductive unit; 1111. first chip conductive plate; 112. second chip conductive unit; 1121. second chip conductive plate; 113. third chip conductive unit; 114. fourth chip conductive unit; 115. first connection conductive unit; 116. second connection conductive unit; 1161. first connection conductive segment; 1162. second connection conductive segment; 1163. third connection conductive segment; 12. power terminal conductive part; 121. first mounting block; 1211. first block; 1212. second block; 1213. third block; 1214. fourth block; 122. first power terminal conductive unit; 1221. first power conductive segment; 122 2, the second power conductive segment; 1223, the third power conductive segment; 1224, the fourth power conductive segment; 123, the second power terminal conductive unit; 1231, the fifth power conductive segment; 1232, the sixth power conductive segment; 1233, the seventh power conductive segment; 1234, the eighth power conductive segment; 1235, the ninth power conductive segment; 1236, the tenth power conductive segment; 1237, the eleventh power conductive segment; 1238, the twelfth power conductive segment; 1239, the thirteenth power conductive segment; 124, the third power terminal conductive unit; 1241, the fourteenth power conductive segment; 1242, the fifteenth power conductive segment; 1243, the sixteenth power conductive segment; 1244, the seventeenth power conductive segment; 1245, the eighteenth power conductive segment; 125, fourth power terminal conductive unit; 1251, nineteenth power conductive segment; 1252, twentieth power conductive segment; 1253, twenty-first power conductive segment; 20, package body; 21, first through-hole structure; 22, second through-hole structure; 30, chip structure; 31, first chip; 32, second chip; 33, third chip; 34, fourth chip; 40, power terminal structure; 41, first power terminal; 411, first connecting segment; 412, second connecting segment; 413, extension segment; 42, second power terminal; 43, third power terminal; 44, fourth power terminal; 50, connecting structure; 51, first connecting portion; 511, first connecting block; 512, second connecting block; 52, first Second connection part; 53, third connection part; 531, connection bridge; 60, control terminal conductive part; 61, second mounting block; 611, fifth block; 612, sixth block; 62, first control terminal conductive unit; 621, first control conductive segment; 622, second control conductive segment; 63, second control terminal conductive unit; 631, third control conductive segment; 632, fourth control conductive segment; 64, third control terminal conductive unit; 641, fifth control conductive segment; 642, sixth control conductive segment; 643, seventh control conductive segment; 65, fourth control terminal conductive unit; 651, eighth control conductive segment; 70, control terminal structure; 71, first control terminal; 72, second control terminal; 80, first arc plate;90, second arc plate; 100, test terminal structure; 101, first test terminal; 102, second test terminal; 110, test terminal conductive part; 1101, first test terminal conductive unit; 11011, first test conductive segment; 11012, second test conductive segment; 1102, second test terminal conductive unit; 11021, third test conductive segment; 11022, fourth test conductive segment; 1103, third mounting block; 11031, seventh block; 11032, eighth block; 200, mold; 201, main body; 2011, injection cavity; 20111, separation cylinder; 2012, injection hole. ; DETAILED DESCRIPTION

[0049] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0051] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0052] Power electronic devices are developing towards high frequency, high density, high power and high temperature applications. At present, the power electronic packaging structure is gradually developing from the traditional wire bonding standard packaging structure to secondary injection molding, double-sided connection, device integration, and three-dimensional power integrated packaging structure. Among them, the injection molding structure is a compact planar package that is easy to mass produce modules. The typical power module packaging structure consists of power chips, connection materials, bonding wires, ceramic substrates, base plates, plastic packaging materials, shells and power terminals. Among them, the main functions of plastic packaging materials are electrical insulation and environmental isolation, which play a protective role such as moisture-proof, salt spray-proof, mildew-proof, dust-proof, collision-proof and vibration-proof, avoiding environmental corrosion and damage, thereby ensuring the electrical performance of electronic components, and even improving the voltage level of high-voltage power modules, avoiding electrode discharge, and ultimately improving the reliability of electronic products. Plastic packaging materials can be divided into conformal coatings, bottom filling glue, molding compounds, potting glue and top encapsulation glue.

[0053] Traditional packaging structures usually adopt a frame-type structure, which is large in size, high in parasitic inductance and low in conversion efficiency. At present, transfer molding is the main technical direction for high-power density, high-reliability and lightweight power module packaging, and is the main product form of advanced new wide-bandgap high-power modules. In recent years, the plastic-encapsulated power modules launched on the market use plastic encapsulation materials to replace potting glue and shells, and then perform injection molding and curing after chip lead bonding, terminal and pin welding, and finally cut ribs to form.

[0054] Advantages of transfer molding and plastic encapsulation modules: Transfer molding and plastic encapsulation technology is widely used in the packaging of integrated circuits and discrete devices, but it has not been used for high-power module packaging until recent years. Its advantages are: ① Higher operating temperature. At present, the maximum glass transition temperature of epoxy molding compound (EMC) reaches more than 200 ℃, so it is more suitable for high-temperature packaging than silicone; ② The thermal expansion coefficient of EMC material is one order of magnitude lower than that of silicone, and it can be achieved below 15 ppm / K. During the temperature change process, the thermal stress of EMC material semiconductor chips, interconnect metals, and insulating linings is smaller, thereby improving the "thermo-mechanical" stability and life of the module; ③ Transfer molding and plastic encapsulation have strong moisture resistance, and EMC materials have stronger resistance to moisture, ensuring the long-term reliability of the module in a humid working environment; ④ Stronger ability to resist mechanical vibration and impact. EMC materials have high strength after curing, and have strong bonding with materials such as terminals and linings, thereby reducing the impact of mechanical vibration and impact on the module and improving the reliability of the module. At present, major IGBT (Insulate Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) module manufacturers have launched plastic-encapsulated module products.

[0055] Disadvantages of existing plastic-encapsulated modules: ① The equipment and process requirements for transfer molding are higher than those for traditional silicone filling, and customized tooling is required. The process is long and the cost is high. ② The existing transfer molding is mainly suitable for module products with no substrate structure and small size, while the current main topology is a half-bridge structure. This is because after injection molding, the EMC needs to be cured at high temperature for a long time. This process causes the substrate to form a large "thermal-mechanical" stress, causing the substrate to deform (the existing technology solves this problem by designing grooves). ③ The current plastic-encapsulated module needs to be welded and bent for terminals and pins first, and then welded to the heat dissipation base plate. Because the surface of the module is uneven, it can only be welded, but not sintered, which cannot further reduce thermal resistance and improve heat dissipation efficiency. ④ The current plastic-encapsulated module must be cut and formed. The process equipment and mold need to be customized for the product, which is costly. At the same time, the cutting and forming process uses a rigid contact hard cutting method to directly contact the product, resulting in damage such as delamination and cracking of the plastic-encapsulated parts. The high impact force is transmitted to the inside of the module through the terminal, causing damage to the chip and bonding wire, etc., and even seriously affecting the product yield and service life. ⑤ The existing module chip electrode lead-out method is traditional wire bonding, which has weak current-carrying capacity and high failure rate under power cycling and temperature cycling. At present, the current terminals of transfer-molded plastic-sealed modules are all led out from the side. The reason is that they are limited by the existing rib cutting molding process, that is, the rib cutting direction is perpendicular to the frame, and only terminals parallel to the insulating substrate can be produced, resulting in limited application scenarios.

[0056] In response to the above problems, this embodiment proposes a power module suitable for large-area sintering of the entire device, namely a packaging structure, which can realize large-area sintering connection of the heat dissipation base plate. The process does not require rib cutting and forming, thereby avoiding damage to the device during the process. Terminals and pin through holes are reserved to fully release the thermal-mechanical stress formed during the epoxy resin curing process, thereby greatly improving the heat dissipation efficiency and reliability.

[0057] The packaging structure of this implementation has the following characteristics:

[0058] (1) Existing plastic-encapsulated modules can only be welded to the heat dissipation base plate, and large-area welding will lead to a significant increase in the void rate, an increase in the thermal resistance of the module, and a decrease in the heat dissipation and long-term working stability. This embodiment proposes a complete manufacturing method for manufacturing a sintered heat dissipation base plate plastic-encapsulated module, which realizes a large-area sintering connection between the heat dissipation base plate and the insulating substrate (i.e., a sintering connection between the copper-clad ceramic substrate and the heat dissipation structure), greatly improving the heat dissipation and stability of the power module.

[0059] (2) An innovative design of the copper layer on the insulating substrate (i.e., the chip conductive portion 11, the power terminal conductive portion 12, the control terminal conductive portion 60, and the test terminal conductive portion 110), and protrusions (i.e., the first mounting block 121, the second mounting block 61, and the third mounting block 1103) are designed at the pins (i.e., the control terminal structure 70 and the test terminal structure 100) and the terminal connection, together with a matching injection mold (i.e., the mold 200), to ensure that the plastic encapsulation material does not enter the protrusions during the injection molding process;

[0060] (3) The raised part of the upper copper layer is a thick copper layer (i.e., the first mounting block 121, the second mounting block 61, and the third mounting block 1103). Compared with the existing insulating substrate, it can withstand higher power and energy during the terminal bonding process. The shear strength of the connector formed after bonding is greater, and the device has a stronger ability to withstand temperature cycles and power cycles. It can be applied to the needs of high-power silicon carbide devices and give full play to the advantages of silicon carbide.

[0061] (4) The power terminal structure 40, the control terminal structure 70 and the test terminal structure 100 are led out from the side of the package body 20 away from the substrate 10, which solves the problem that the traditional plastic-encapsulated module can only arrange the signal pins and power terminals from the side, resulting in a large volume of the power module, a long electrical circuit and a large parasitic inductance. At the same time, it also saves the rib cutting molding, avoids the generation of cracks or delamination of the plastic encapsulation (i.e., the package body 20), and avoids the high shear force transmission affecting the chip, so that the module reliability is further improved.

[0062] (5) The power circuit uses a copper bridge (i.e., connection structure 50) and Cu-Clip connection (i.e., first arc plate 80 and second arc plate 90) to replace the bonding wire, thereby increasing the allowable current, simplifying the packaging process, and increasing reliability. The copper bridge connects multiple chips (i.e., chip structure 30) at the same time, which can make the chip junction temperature tend to be consistent, ensuring that the module can better achieve current sharing. The copper bridge draws part of the chip heat from the top to the area around the chip, increasing the heat dissipation area and reducing the thermal resistance of the module.

[0063] (6) When sintering the heat dissipation base plate, the plastic package (i.e., the package body 20) is subjected to force as a whole, thereby avoiding the risk of chip damage caused by direct contact between the sintering press head and the chip.

[0064] (7) The reserved through holes on the plastic package (i.e., the first through hole structure 21 and the second through hole structure 22 on the package body 20) also play a role in relieving stress, greatly reducing the impact on the chip and bonding wire during the injection molding curing and cooling process.

[0065] (8) The method for manufacturing the packaging structure is applicable to a plastic-encapsulated module in which one or more of the IGBT chips, MOSFET chips, and diode chips are combined together. It is compatible with existing process equipment conditions and can be mass-produced at low cost and high efficiency.

[0066] (9) This packaging structure does not require post-installation, and the heat dissipation efficiency of the direct sintering connection base plate is better than that of post-installation. It can give full play to the high junction temperature working advantage of the silicon carbide chip. According to application requirements, multiple unit modules can be injection molded at the same time and sintered at the same time with the heat dissipation base plate to form a series module. The three half-bridge modules are plastic-sealed at the same time to form a three-phase full-bridge module.

[0067] The packaging structure of this embodiment has the following advantages: ① A large-area sintering connection between the heat dissipation base plate and the insulating substrate is achieved through innovative process steps; ② The innovative design of the special-shaped copper layer on the insulating substrate matches the terminal pins, together with the matching injection mold, to ensure that the plastic encapsulation material will not enter the connection during the injection molding process. At the same time, the protrusions of the upper copper layer are thicker, and the energy that can be withstood during the terminal bonding process is greater. The shear strength of the connector formed after bonding is greater, which can meet the needs of high-power silicon carbide devices and give full play to the advantages of silicon carbide; ③ The through holes are reserved in the first injection molding or the shell, and the gaps and their matching molds are filled in the second injection molding. ④ The power circuit uses copper bridge and Cu-Clip connection to replace bonding wires; ⑤ No subsequent installation is required, and multiple modules can be connected in series to share a heat dissipation baseplate at one time, and three half-bridge modules are simultaneously plastic-sealed to form a three-phase full-bridge module; ⑥ It breaks through the limitation that the existing transfer-molding plastic-sealed modules rely on rib cutting and forming, resulting in the terminal can only be led out from the side, making the connection method between the terminal and the DC busbar more flexible, greatly expanding the application scenarios of transfer-molding plastic-sealed modules, and no rib cutting and forming is required, avoiding cracks or stratification of plastic-sealed parts, and high impact conduction affecting chips and other problems.

[0068] like Figure 1 , Figure 2 as well as Figure 5 As shown, the package structure of this embodiment includes: a substrate 10, a package body 20, a chip structure 30 and a power terminal structure 40. A power terminal conductive portion 12 is provided on the substrate 10. The package body 20 is provided on the substrate 10 and encapsulates the first area of ​​the power terminal conductive portion 12. A first through-hole structure 21 is provided on the package body 20, and the first through-hole structure 21 exposes the second area of ​​the power terminal conductive portion 12. The chip structure 30 is provided on the chip conductive portion 11 and is located in the package body 20. The power terminal structure 40 is penetrated in the first through-hole structure 21, a first end of the power terminal structure 40 is connected to the second area of ​​the power terminal conductive portion 12 and is conductively connected to the chip structure 30, and a second end of the power terminal structure 40 penetrates the first through-hole structure 21.

[0069] By applying the technical solution of the present invention, a power terminal conductive portion 12 is provided on the substrate 10. A package body 20 is also provided on the substrate 10, and the package body 20 encapsulates the first area of ​​the power terminal conductive portion 12. A first through-hole structure 21 is provided on the package body 20, and the first through-hole structure 21 exposes the second area of ​​the power terminal conductive portion 12, and the axis of the first through-hole structure 21 is perpendicular to the substrate 10. A chip structure 30 is provided on the substrate 10, and the chip structure 30 is located in the package body 20. A power terminal structure 40 is provided in the first through-hole structure 21, and a first end of the power terminal structure 40 is connected to the second area of ​​the power terminal conductive portion 12, and a first end of the power terminal structure 40 is conductively connected to the chip structure 30, and a second end of the power terminal structure 40 passes through the first through-hole structure 21. Through the above arrangement, the substrate 10 can support the power terminal conductive portion 12. The package body 20 can encapsulate the first area of ​​the power terminal conductive part 12, and the chip structure 30 is located in the package body 20, so that the package body 20 can protect the first area of ​​the power terminal conductive part 12 and the chip structure 30. The first through-hole structure 21 exposes the second area of ​​the power terminal conductive part 12, which facilitates the connection between the power terminal structure 40 and the second area of ​​the power terminal conductive part 12, and also enables the power terminal structure 40 to pass through the package body 20 from the side of the package body 20 away from the substrate 10, and then different structural forms of power terminal structures can be selected according to whether the external connector is located on the side of the surface of the package body 20 away from the substrate 10 or the external connector is located on the side of the package body 20, that is, the part of the power terminal structure 40 located outside the package body 20 extends toward the middle of the package body 20 or toward the side of the package body 20 as needed, so that the connection method between the power terminal structure 40 and the external connector is more flexible, expanding the application scenario of the package structure, and making the package structure more versatile. Therefore, the technical solution of the present application effectively solves the problem of limited application scenarios of the package structure in the related art.

[0070] It should be noted that the substrate 10 is also provided with a chip conductive portion 11, and the chip conductive portion 11 and the power terminal conductive portion 12 are arranged at intervals. The package body 20 encapsulates the entire area of ​​the chip conductive portion 11. The chip structure 30 is arranged on the chip conductive portion 11. The axis of the first through-hole structure 21 is perpendicular to the substrate 10.

[0071] The package structure further includes a sealing portion, which is filled and arranged in the first through-hole structure 21 to seal the gap between the first through-hole structure 21 and the power terminal structure 40. The sealing portion can seal the gap between the first through-hole structure 21 and the power terminal structure 40, so that under the action of the package body 20 and the sealing portion, the chip conductive portion 11, the power terminal conductive portion 12, the first end of the power terminal structure 40 and the chip structure 30 arranged in the package body 20 can be isolated from the outside of the package body 20, thereby achieving sealing of the package structure.

[0072] The axis of the first through-hole structure 21 is perpendicular to the substrate 10. This facilitates the arrangement of the power terminal structure, and also enables the power terminal structure 40 to pass through the package body 20 from the side of the package body 20 away from the substrate 10, and then different structural forms of power terminal structures can be selected according to whether the external connector is located on the side of the surface of the package body 20 away from the substrate 10 or the external connector is located on the side of the package body 20, that is, the part of the power terminal structure 40 located outside the package body 20 extends toward the middle of the package body 20 or toward the side of the package body 20 as needed, so that the connection method between the power terminal structure 40 and the external connector is more flexible, which expands the application scenario of the package structure and makes the package structure more versatile.

[0073] The packaging structure of this embodiment is a silicon carbide power electronic device.

[0074] The packaging structure also includes a heat dissipation structure arranged on a side of the substrate 10 away from the packaging body 20. The heat dissipation structure is a Pin-Fin structure. The heat dissipation structure includes a heat dissipation metal plate and multiple heat dissipation metal columns. The multiple heat dissipation metal columns are arranged in a certain pattern on a side of the heat dissipation metal plate away from the substrate.

[0075] When the portion of the power terminal structure 40 located outside the package body 20 extends toward the middle of the package body 20, the power terminal structure 40 can be connected to an external connector located on the side of the surface of the package body 20 away from the substrate 10; when the portion of the power terminal structure 40 located outside the package body 20 extends toward the side of the package body 20, the power terminal structure 40 can be connected to an external connector located on the side of the package body 20.

[0076] The packaging structure of this embodiment breaks through the limitation that the power terminal structure 40 can only be led out from the side due to the rib cutting molding of the existing transfer molding plastic sealing module, making the connection method between the power terminal structure 40 and the DC busbar more flexible, greatly expanding the application scenarios of the transfer molding plastic sealing module.

[0077] like Figure 5 As shown, in this embodiment, the power terminal conductive portion 12 includes a first mounting block 121, which is disposed on the substrate 10, and the second region of the power terminal conductive portion 12 is located on the first mounting block 121. The first mounting block 121 can protrude from the substrate 10, so that the power terminal structure 40 is easily connected to the second region of the power terminal conductive portion 12.

[0078] It should be noted that by providing the first mounting block 121 , it is possible to prevent the molding compound from flowing into the second region of the power terminal conductive portion 12 during the injection molding of the package body 20 , thereby preventing the connection between the power terminal structure 40 and the first mounting block 121 from being affected.

[0079] like Figure 1 and Figure 2 As shown, in this embodiment, the projection of the first end of the power terminal structure 40 on the substrate 10 is located within the projection area of ​​the first through-hole structure 21 on the substrate 10. Through the above arrangement, it is convenient for the first end of the power terminal structure 40 to extend into the first through-hole structure 21, thereby facilitating the connection between the first end of the power terminal structure 40 and the second area of ​​the power terminal conductive portion 12.

[0080] It should be noted that the first end of the power terminal structure 40 is connected to the second region of the power terminal conductive portion 12 by ultrasonic welding. By setting the projection of the first end of the power terminal structure 40 on the substrate 10 to be located within the projection region of the first through-hole structure 21 on the substrate 10, the first through-hole structure 21 can allow the ultrasonic welding head to extend into the package body 20, thereby achieving the connection between the first end of the power terminal structure 40 and the second region of the power terminal conductive portion 12.

[0081] like Figure 2 As shown, in this embodiment, the chip structure 30 includes a first chip 31, and the package structure further includes a connection structure 50, which is disposed between the first chip 31 and the power terminal conductive portion 12. By providing the connection structure 50, the first chip 31 and the power terminal conductive portion 12 can be connected, thereby allowing current to flow between the first chip 31 and the power terminal conductive portion 12.

[0082] It should be noted that the package body 20 includes a panel and a boss disposed in the panel, and the side of the boss facing the substrate abuts against the side of the connection structure away from the substrate, so that the relative position between the connection structure 50 and the substrate 10 is more stable. The first through hole structure 21 is disposed in the boss and passes through the boss. The power terminal structure 40 passes through the side of the boss away from the substrate 10.

[0083] like Figure 2 as well as Figures 7 to 10As shown, in this embodiment, the connection structure 50 includes a first connection portion 51, a second connection portion 52 and a third connection portion 53, the third connection portion 53 is connected between the side of the first connection portion 51 facing the second connection portion 52 and the side of the second connection portion 52 facing the first connection portion 51, the first connection portion 51 is connected to the surface of the chip structure 30 away from the chip conductive portion 11, and the second connection portion 52 is arranged on the power terminal conductive portion 12. The first connection portion 51 can be connected to the surface of the chip structure 30 away from the chip conductive portion 11, the second connection portion 52 can be connected to the power terminal conductive portion 12, and the third connection portion 53 can connect the first connection portion 51 and the second connection portion 52, so that under the action of the first connection portion 51, the second connection portion 52 and the third connection portion 53, the current can flow between the power terminal conductive portion 12, the chip structure 30 and the chip conductive portion 11.

[0084] like Fig.10 As shown, in this embodiment, the third connection portion 53 includes a connection bridge 531. In the direction from the first connection portion 51 to the second connection portion 52, the distance between the side of the connection bridge 531 facing the substrate 10 and the substrate 10 increases first and then decreases. Through the above-mentioned arrangement, there is a larger interval between the side of the connection bridge 531 facing the substrate 10 and the substrate 10, which avoids the side of the connection bridge 531 facing the substrate 10 and the chip conductive part 11 being too small, resulting in conduction between the chip conductive part 11 and the connection bridge 531, and also avoids the side of the connection bridge 531 facing the substrate 10 and the power terminal conductive part 12 being too small, resulting in conduction between the power terminal conductive part 12 and the connection bridge 531.

[0085] It should be noted that, in this embodiment, the side of the connecting bridge 531 facing the substrate 10 is a first curved surface.

[0086] like Figure 8 and Fig. 9 As shown, in the present embodiment, the chip structure 30 includes a plurality of first chips 31, the first connection portion 51 includes a plurality of first connection blocks 511 and at least one second connection block 512, each first connection block 511 is connected to a corresponding first chip 31, and a second connection block 512 is arranged between any two first connection blocks 511. A plurality of first chips 31 are arranged so that a larger current can be passed through the package structure. Each first connection block 511 can be connected to a corresponding first chip 31, so that the first connection block 511 can conduct the first chip 31 and the third connection portion 53, thereby enabling the flow of current. A second connection block 512 is arranged between any two first connection blocks 511, so that the second connection block 512 can connect the first connection block 511, thereby making the structural strength of the first connection portion 51 better.

[0087] like Figure 2 As shown, in the present embodiment, a plurality of first chips 31 are arranged at intervals along the first direction, and in the first direction, the distance between the second connection block 512 facing the side of the substrate 10 and the substrate 10 increases first and then decreases. A plurality of first chips 31 are arranged at intervals along the first direction, so that the arrangement of the first connection block 511 and the second connection block 512 is more reasonable, and the flow of current is better. The distance between the second connection block 512 facing the side of the substrate 10 and the substrate 10 increases first and then decreases, so that there is a sufficient distance between the second connection block 512 and the chip conductive part 11, avoiding direct conduction between the second connection block 512 and the chip conductive part 11, which affects the normal use of the packaging structure.

[0088] It should be noted that, in this embodiment, the side of the second connection block 512 facing the substrate 10 is a second curved surface.

[0089] like Figure 1 and Figure 4 As shown, in this embodiment, the package structure further includes a control terminal conductive part 60 and a control terminal structure 70, the control terminal conductive part 60 is arranged on the substrate 10, the first area of ​​the control terminal conductive part 60 is located in the package body 20, the package body 20 is provided with a second through-hole structure 22, the second through-hole structure 22 exposes the second area of ​​the control terminal conductive part 60, the control terminal structure 70 is penetrated in the second through-hole structure 22, the first end of the control terminal structure 70 is connected to the second area of ​​the control terminal conductive part 60 and is conductively connected to the chip structure 30, and the second end of the control terminal structure 70 penetrates the second through-hole structure 22. By providing the control terminal structure 70 and the control terminal conductive part 60, the chip structure 30 can be controlled, and then the chip structure 30 can be switched between running and stopping. The second through-hole structure 22 enables the control terminal structure 70 to extend into the package body 20, and then the control terminal structure 70 can be connected to the second area of ​​the control terminal conductive part 60.

[0090] It should be noted that the first end of the control terminal structure 70 is connected to the second area of ​​the control terminal conductive portion 60 by ultrasonic welding. The second through-hole structure 22 allows the ultrasonic welding head to extend into the package body 20 to achieve the connection between the first end of the control terminal structure 70 and the second area of ​​the control terminal conductive portion 60.

[0091] The second through hole structure 22 is disposed in the boss and penetrates the boss. The control terminal structure 70 passes through a side of the boss away from the substrate 10 .

[0092] like Figure 1 and Figure 4As shown, in this embodiment, the control terminal conductive part 60 includes a second mounting block 61 disposed on the substrate 10, and the second area of ​​the control terminal conductive part 60 is located on the second mounting block 61. The second mounting block 61 can protrude from the substrate 10, so that the control terminal structure 70 is easily connected to the second area of ​​the control terminal conductive part 60.

[0093] It should be noted that the second mounting block 61 can be provided to prevent the molding compound from flowing into the second region of the control terminal conductive portion 60 during the injection molding of the package body 20 , thereby preventing the connection between the control terminal structure 70 and the second mounting block 61 from being affected.

[0094] like Figure 2 , Figure 5 as well as Figure 6 As shown, in this embodiment, the chip structure 30 further includes a second chip 32, the chip conductive portion 11 includes a first chip conductive unit 111 and a second chip conductive unit 112, the first chip 31 is arranged on the first chip conductive unit 111, and the second chip 32 is arranged on the second chip conductive unit 112. The power terminal structure 40 includes a first power terminal 41, a second power terminal 42, and a third power terminal 43, the power terminal conductive portion 12 includes a first power terminal conductive unit 122, a second power terminal conductive unit 123, and a third power terminal conductive unit 124, the first power terminal 41 is arranged on the first power terminal conductive unit 122, the second power terminal 42 is arranged on the second power terminal conductive unit 123, and the third power terminal 43 is arranged on the third power terminal conductive unit 124. The surface of the first chip 31 away from the substrate 10 is conductively connected to the first power terminal conductive unit 122, the first chip conductive unit 111 is conductively connected to the second power terminal conductive unit 123, the surface of the second chip 32 away from the substrate 10 is conductively connected to the second power terminal conductive unit 123, and the second chip conductive unit 112 is conductively connected to the third power terminal conductive unit 124. Through the above configuration, current can flow between the first chip conductive unit 111, the first chip 31, the second power terminal conductive unit 123, the first power terminal conductive unit 122, the first power terminal 41 and the second power terminal 42, or the current can flow between the second chip 32, the second chip conductive unit 112, the second power terminal conductive unit 123, the second power terminal 42, the third power terminal conductive unit 124 and the third power terminal 43, that is, the current flows through the first chip 31 or the second chip 32.

[0095] Specifically, Figure 5 and Fig.11As shown, current can flow in through the third power terminal 43, and flow out through the third power terminal conductive unit 124, the second chip conductive unit 112, the second chip 32, the second power terminal conductive unit 123, and the second power terminal 42 in sequence. Current can also flow in through the second power terminal 42, and flow out through the second power terminal conductive unit 123, the first chip conductive unit 111, the first chip 31, the first power terminal conductive unit 122, and the first power terminal 41 in sequence. That is, when current flows through the first chip 31, the first chip 31 operates, and the second chip 32 stops operating; when current flows through the second chip 32, the second chip 32 operates, and the first chip 31 stops operating, that is, one of the first chip 31 and the second chip 32 operates, and the other of the first chip 31 and the second chip 32 stops operating.

[0096] It should be noted that the chip structure 30 further includes a third chip 33 and a fourth chip 34, and the chip conductive portion further includes a third chip conductive unit 113 conductively connected to the first chip conductive unit 111 and a fourth chip conductive unit 114 conductively connected to the second chip conductive unit. The third chip 33 is disposed on the third chip conductive unit 113, and the fourth chip 34 is disposed on the fourth chip conductive unit 114. The surface of the third chip 33 away from the substrate 10 is conductively connected to the first power terminal conductive unit 122, the third chip conductive unit 113 is conductively connected to the second power terminal conductive unit 123, the surface of the fourth chip 34 away from the substrate 10 is conductively connected to the second power terminal conductive unit 123, and the fourth chip conductive unit 114 is conductively connected to the third power terminal conductive unit 124. Through the above-mentioned arrangement, current can flow between the third chip conductive unit 113, the third chip 33, the second power terminal conductive unit 123, the first power terminal conductive unit 122, the first power terminal 41 and the second power terminal 42, or current can flow between the fourth chip 34, the fourth chip conductive unit 114, the second power terminal conductive unit 123, the second power terminal 42, the third power terminal conductive unit 124 and the third power terminal 43, that is, the current flows through the third chip 33 or the fourth chip 34.

[0097] Specifically, the current can flow in through the third power terminal 43, and flow out through the third power terminal conductive unit 124, the fourth chip conductive unit 114, the fourth chip 34, the second power terminal conductive unit 123, and the second power terminal in sequence. The current can also flow in through the second power terminal 42, and flow out through the second power terminal conductive unit 123, the third chip conductive unit 113, the third chip 33, the first power terminal conductive unit 122, and the first power terminal 41 in sequence. That is, when the current flows through the third chip 33, the third chip 33 operates, and the fourth chip 34 stops operating; when the current flows through the fourth chip 34, the fourth chip 34 operates, and the third chip 33 stops operating, that is, one of the third chip 33 and the fourth chip 34 operates, and the other of the third chip 33 and the fourth chip 34 stops operating.

[0098] The second chip 32 includes a plurality of second chips 32, and the plurality of second chips 32 are arranged at intervals along the first direction. The third chip 33 includes a plurality of third chips 33, and the plurality of third chips 33 are arranged at intervals along the first direction. The fourth chip 34 includes a plurality of fourth chips 34, and the plurality of fourth chips 34 are arranged at intervals along the first direction. The connection structure 50 includes a plurality of second chips 32, and the plurality of third chips 33 are connected to the first power terminal conductive unit 122 through a connection structure 50, and the plurality of fourth chips 34 are connected to the second power terminal conductive unit 123 through a connection structure 50.

[0099] The connection structure 50 is connected to the chip structure 30 and the power terminal conductive portion 12 through a sintering process. Of course, the connection structure 50 can also be connected to the chip structure 30 and the power terminal conductive portion 12 through a welding process.

[0100] The first chip 31 and the third chip 33 are arranged in parallel, and the second chip 32 and the fourth chip 34 are arranged in parallel. The first chip and the third chip 33 run at the same time, or stop running at the same time. The second chip 32 and the fourth chip 34 run at the same time, or stop running at the same time. By arranging the first chip 31, the second chip 32, the third chip 33 and the fourth chip 34, the packaging structure of this embodiment forms a half-bridge structure.

[0101] The first chip conductive unit 111 and the third chip conductive unit 113 are arranged at intervals along the second direction. The second chip conductive unit 112 and the fourth chip conductive unit 114 are also arranged at intervals along the second direction. The first chip conductive unit 111 and the second chip conductive unit 112 are arranged at intervals along the first direction. The third chip conductive unit 113 and the fourth chip conductive unit 114 are also arranged at intervals along the first direction.

[0102] The third chip conductive unit 113 is connected to the second power terminal conductive unit 123. The first chip conductive unit 111 is connected to the second power terminal conductive unit 123.

[0103] The control terminal structure 70 includes a first control terminal 71 and a second control terminal 72 . The control terminal conductive portion 60 includes a first control terminal conductive unit 62 and a second control terminal conductive unit 63 . The first control terminal 71 is conductively connected to the first control terminal conductive unit 62 , and the second control terminal 72 is conductively connected to the second control terminal conductive unit 63 .

[0104] The gate of the first chip 31 and the gate of the third chip 33 are arranged opposite to each other, and the gate of the first chip 31 and the gate of the third chip 33 are both conductively connected to the first control terminal conductive unit 62. The gate of the second chip 32 and the gate of the fourth chip 34 are arranged opposite to each other, and the gate of the second chip 32 and the gate of the fourth chip 34 are both conductively connected to the second control terminal conductive unit 63.

[0105] The first control terminal conductive unit 62 is disposed between the first chip conductive unit 111 and the third chip conductive unit 113 . This facilitates connecting the gate of the first chip 31 and the gate of the third chip 33 to the first control terminal conductive unit 62 .

[0106] The second control terminal conductive unit 63 is disposed between the second chip conductive unit 112 and the fourth chip conductive unit 114 , so as to facilitate connecting the gate of the second chip 32 and the gate of the fourth chip 34 to the second control terminal conductive unit 63 .

[0107] The chip conductive part 11 further includes a first connecting conductive unit 115 and a second connecting conductive unit 116. The first connecting conductive unit 115 is connected between the first chip conductive unit 111 and the third chip conductive unit 113. The second connecting conductive unit 116 is connected between the second chip conductive unit 112 and the fourth chip conductive unit 114.

[0108] The first chip conductive unit 111 includes a first chip conductive plate 1111, the second chip conductive unit 112 includes a second chip conductive plate 1121, the third chip conductive unit 113 includes a third chip conductive plate, and the fourth chip conductive unit 114 includes a fourth chip conductive plate. The first connection conductive unit 115 includes a first connection conductive plate, and the second connection conductive unit 116 includes a second connection conductive plate.

[0109] The second connecting conductive plate includes a first connecting conductive segment 1161, a second connecting conductive segment 1162, and a third connecting conductive segment 1163 connected between the first connecting conductive segment 1161 and the second connecting conductive segment 1162. The first end of the first connecting conductive segment 1161 is arranged on a side of the fourth chip conductive plate away from the third chip conductive plate, and the first connecting conductive segment 1161 extends along the first direction. The third connecting conductive segment 1163 is arranged on the second end of the first connecting conductive segment 1161, the first end of the first connecting conductive segment 1161 is arranged opposite to the second end of the first connecting conductive segment 1161, and the third connecting conductive segment 1163 extends along the second direction. The second connecting conductive segment 1162 is arranged on a side of the second chip conductive plate 1121 away from the first chip conductive plate 1111, and the second connecting conductive segment 1162 extends along the second direction.

[0110] The first control terminal conductive unit 62 includes a first control terminal conductive plate, the first control terminal conductive plate includes a first control conductive segment 621 and a second control conductive segment 622, the first control conductive segment 621 is arranged between the first chip conductive plate 1111 and the third chip conductive plate, the first end of the second control conductive segment 622 is arranged at an end of the first control terminal conductive plate away from the first connecting conductive plate, and the second end of the second control conductive segment 622 extends in the second direction toward a direction away from the first chip conductive plate 1111.

[0111] The second control terminal conductive unit 63 includes a second control terminal conductive plate, the second control terminal conductive plate includes a third control conductive segment 631 and a fourth control conductive segment 632, the third control conductive segment 631 is arranged between the second chip conductive plate 1121 and the fourth chip conductive plate. The first end of the fourth control conductive segment 632 is arranged at an end of the third control conductive segment 631 away from the first control terminal conductive plate, and the second end of the fourth control conductive segment 632 extends in the second direction toward a direction away from the fourth chip conductive plate.

[0112] The fourth control conductive segment 632 is located in a space enclosed by the second connecting conductive plate and the second chip conductive plate 1121 .

[0113] The control terminal conducting portion 60 further includes a third control terminal conducting unit 64 connected to the first control terminal conducting unit 62 and a fourth control terminal conducting unit 65 connected to the second control terminal conducting unit 63 .

[0114] The third control terminal conductive unit 64 includes a third control terminal conductive plate, which includes a fifth control conductive segment 641, a sixth control conductive segment 642 and a seventh control conductive segment 643. The first end of the sixth control conductive segment 642 is connected to the fifth control conductive segment 641, the first end of the seventh control conductive segment 643 is connected to the second end of the sixth control conductive segment 642, and the second end of the seventh control conductive segment 643 extends in the first direction toward a direction away from the third chip 33.

[0115] The first chip and the third chip 33 are both connected to the first control conductive segment 621 through a first bonding wire. The second control conductive segment 622 and the fifth control conductive segment 641 are connected through a second bonding wire.

[0116] The fourth control terminal conductive unit 65 includes a fourth control terminal conductive plate, and the fourth control terminal conductive plate includes an eighth control conductive segment 651 .

[0117] The second chip and the fourth chip 34 are both connected to the third control conductive segment 631 through a third bonding wire. The fourth control conductive segment 632 is connected to the eighth control conductive segment 651 through a fourth bonding wire.

[0118] The first power terminal conductive unit 122 includes a first power terminal conductive plate, and the first power terminal conductive plate includes a first power conductive segment 1221, a second power conductive segment 1222, a third power conductive segment 1223, and a fourth power conductive segment 1224. The second power conductive segment 1222 is disposed in the middle of a side of the first power terminal conductive plate away from the first connection conductive plate. The first end of the third power conductive segment 1223 is disposed at the first end of the first power conductive segment 1221, and the second end of the third power conductive segment 1223 extends in the first direction toward a direction away from the second power conductive segment 1222. The first end of the fourth power conductive segment 1224 is disposed at the second end of the first power conductive segment 1221, and the second end of the fourth power conductive segment 1224 extends in the first direction toward a direction away from the second power conductive segment 1222.

[0119] The fourth power conductive segment 1224 , the third chip conductive unit 113 , the first control conductive segment 621 , the first chip conductive unit 111 , and the third power conductive segment 1223 are spaced apart in the second direction.

[0120] The plurality of first chips 31 are connected to the third power conductive segment 1223 via a connection structure 50. The plurality of third chips 33 are connected to the fourth power conductive segment 1224 via a connection structure 50.

[0121] The second power terminal conductive unit 123 includes a second power terminal conductive plate, and the second power terminal conductive plate includes a fifth power conductive segment 1231, a sixth power conductive segment 1232, a seventh power conductive segment 1233, an eighth power conductive segment 1234, a ninth power conductive segment 1235, a tenth power conductive segment 1236, an eleventh power conductive segment 1237, a twelfth power conductive segment 1238, and a thirteenth power conductive segment 1239. The sixth power conductive segment 1232 is arranged on a side of the fifth power conductive segment 1231 facing the first connection conductive plate, and the seventh power conductive segment 1233 is also arranged on a side of the fifth power conductive segment 1231 facing the first connection conductive plate, and the sixth power conductive segment 1232 and the seventh power conductive segment 1233 are arranged at intervals. The eighth power conductive segment 1234 is arranged on a side of the sixth power conductive segment 1232 facing the first power conductive segment 1221, and the eighth power conductive segment 1234 extends in the second direction toward a direction away from the fourth chip conductive plate. The first end of the ninth power conductive segment 1235 is arranged on the side of the eighth power conductive segment 1234 facing the first power terminal, and the second end of the ninth power conductive segment 1235 extends in the first direction toward the direction close to the first chip conductive board 1111. The first end of the tenth power conductive segment 1236 is arranged on the second end of the ninth power conductive segment 1235, and the second end of the tenth power conductive segment 1236 extends in the second direction toward the direction close to the fourth chip conductive board. The eleventh power conductive segment 1237 is arranged on the side of the seventh power conductive segment 1233 facing the first power conductive segment 1221, and the eleventh power conductive segment 1237 extends in the second direction toward the direction away from the second chip conductive board 1121. The first end of the twelfth power conductive segment 1238 is arranged on the side of the eleventh power conductive segment 1237 toward the first power terminal, the second end of the twelfth power conductive segment 1238 extends in the first direction toward the direction close to the third chip conductive plate, the first end of the thirteenth power conductive segment 1239 is arranged at the second end of the twelfth power conductive segment 1238, and the second end of the thirteenth power conductive segment 1239 extends in the second direction toward the direction close to the second chip conductive plate 1121.

[0122] The plurality of second chips 32 are connected to the ninth power conductive segment 1235 via a connection structure 50. The plurality of fourth chips 34 are connected to the twelfth power conductive segment 1238 via a connection structure 50.

[0123] The packaging structure further includes a first curved plate 80 and a second curved plate 90. The tenth power conductive segment 1236 and the first chip conductive plate 1111 are connected via the first curved plate 80, and the thirteenth power conductive segment 1239 and the third chip conductive plate are connected via the second curved plate 90. The first curved plate 80 includes a plurality of first curved plates 80, and the plurality of first curved plates 80 are arranged at intervals along the second direction. The second curved plate 90 includes a plurality of second curved plates 90, and the plurality of second curved plates 90 are arranged at intervals along the second direction. The first curved plate 80 is connected to the tenth power conductive segment 1236 and the first chip conductive plate 1111 by welding, and the second curved plate 90 is connected to the thirteenth power conductive segment 1239 and the third chip conductive plate by welding.

[0124] Both ends of the first arc-shaped plate 80 are provided with first connection plates, one of which is provided on the tenth power conductive segment 1236, and the other first connection plate is provided on the first chip conductive plate 1111. A circular hole is provided on the first connection plate. Both ends of the second arc-shaped plate 90 are provided with second connection plates, one of which is provided on the thirteenth power conductive segment 1239, and the other second connection plate is provided on the third chip conductive plate. A circular hole is also provided on the second connection plate.

[0125] The arc structure of the first arc plate 80 and the second arc plate 90 can withstand greater pressure, improve the insulation between high potential and low potential, and significantly enhance the current carrying capacity. The circular holes on the first connecting plate and the circular holes on the second connecting plate can release stress and increase welding strength.

[0126] The third power terminal conductive unit 124 includes a third power terminal conductive plate connected to the fourth chip conductive plate, and the third power terminal conductive plate includes a fourteenth power conductive segment 1241, a fifteenth power conductive segment 1242, a sixteenth power conductive segment 1243, a seventeenth power conductive segment 1244 and an eighteenth power conductive segment 1245. The first end of the fifteenth power conductive segment 1242 is arranged on the side of the fourteenth power conductive segment 1241 toward the first chip conductive plate 1111, the first end of the sixteenth power conductive segment 1243 is arranged at the second end of the fifteenth power conductive segment 1242, the second end of the sixteenth power conductive segment 1243 extends in the second direction toward the direction close to the fourth chip conductive plate, the first end of the seventeenth power conductive segment 1244 is arranged at the second end of the sixteenth power conductive segment 1243, the second end of the seventeenth power conductive segment 1244 extends in the first direction toward the direction away from the first power conductive segment 1221, the first end of the eighteenth power conductive segment 1245 is arranged at the second end of the seventeenth power conductive segment 1244, and the second end of the eighteenth power conductive segment 1245 is connected to the fourth chip conductive plate.

[0127] The power terminal structure 40 further includes a fourth power terminal 44. The power terminal conductive portion 12 further includes a fourth power terminal conductive unit 125. The fourth power terminal conductive unit 125 includes a fourth power terminal conductive plate. The fourth power terminal conductive plate is connected to both the fourth chip conductive plate and the third power terminal conductive plate.

[0128] The first power terminal 41 is a DC-terminal, the second power terminal 42 is an AC terminal, and the third power terminal 43 and the fourth power terminal are both DC+terminals.

[0129] It should be noted that when current flows out of the second power terminal 42, part of the current flowing out of the second power terminal 42 flows in from the third power terminal, and the other part flows in from the fourth power terminal. When current flows in from the second power terminal 42, part of the current flowing into the second power terminal 42 flows out from the third power terminal, and the other part flows out from the fourth power terminal.

[0130] The fourth power terminal conductive plate includes a nineteenth power conductive segment 1251, a twentieth power conductive segment 1252 and a twenty-first power conductive segment 1253, the first end of the twentieth power conductive segment 1252 is arranged on a side of the nineteenth power conductive segment 1251 facing the second chip conductive plate 1121, the first end of the twenty-first power conductive segment 1253 is arranged at the second end of the twentieth power conductive segment 1252, the second end of the twenty-first power conductive segment 1253 extends in the second direction toward a direction close to the first chip conductive plate 1111, and the second end of the twenty-first power conductive segment 1253 is connected to the first end of the seventeenth power conductive segment 1244.

[0131] The package structure further includes a test terminal structure 100 and a test terminal conductive portion 110. The test terminal structure 100 penetrates from a side of the boss away from the substrate 10.

[0132] It should be noted that the first end of the test terminal structure 100 is connected to the test terminal conductive portion 110 by ultrasonic welding. The second through-hole structure 22 allows the ultrasonic welding head to extend into the package body 20 to achieve the connection between the first end of the test terminal structure 100 and the test terminal conductive portion 110.

[0133] like Figure 3 As shown, the test terminal structure 100 includes a first test terminal 101 and a second test terminal 102. The first test terminal 101 is connected to the first power terminal conductive unit 122 via a fifth bonding wire. The second test terminal 102 is connected to the third power terminal conductive unit 124.

[0134] The test terminal conductive portion 110 includes a first test terminal conductive unit 1101 connected to a first power terminal conductive plate, the first test terminal conductive unit 1101 includes a first test terminal conductive plate, the first test terminal conductive plate includes a first test conductive segment 11011 and a second test conductive segment 11012 connected to the first test conductive segment 11011. The distance between the two side walls of the second test conductive segment 11012 in the second direction is greater than the distance between the two side walls of the first test terminal 101 in the first direction. The first test terminal 101 is disposed on the second test conductive segment 11012, and the first test conductive segment 11011 is connected to the fourth power conductive segment 1224 via a fifth bonding wire.

[0135] The test terminal conductive portion 110 also includes a second test terminal conductive unit 1102 connected to the third power terminal conductive plate, the second test terminal conductive unit 1102 includes a second test terminal conductive plate, the second test terminal conductive plate includes a third test conductive segment 11021 and a fourth test conductive segment 11022 connected to the third test conductive segment 11021. The distance between the two side walls of the third test conductive segment 11021 in the second direction is less than the distance between the two side walls of the fourth test terminal in the first direction. The second test terminal 102 is arranged on the fourth test conductive segment 11022, and the third test conductive segment 11021 is connected to the second end of the fifteenth power conductive segment 1242.

[0136] The first mounting block 121 includes a first block body 1211 arranged on a first power terminal conductive plate, a second block body 1212 arranged on a second power terminal conductive plate, a third block body 1213 arranged on a third power terminal conductive plate, and a fourth block body 1214 arranged on a fourth power terminal conductive plate, the first end of the first power terminal is arranged on the first block body 1211, the first end of the second power terminal is arranged on the second block body 1212, the first end of the third power terminal is arranged on the third block body 1213, and the first end of the fourth power terminal is arranged on the fourth block body 1214.

[0137] The first block 1211 and the first power terminal conductive plate, the second block 1212 and the second power terminal conductive plate, the third block 1213 and the third power terminal conductive plate, and the fourth block 1214 and the fourth power terminal conductive plate can be connected by a welding process or a sintering process. Of course, the first block 1211 and the first power terminal conductive plate can be an integrally formed structure, the second block 1212 and the second power terminal conductive plate can be an integrally formed structure, the third block 1213 and the third power terminal conductive plate can be an integrally formed structure, and the fourth block 1214 and the fourth power terminal conductive plate can be an integrally formed structure.

[0138] Specifically, the first block 1211 is disposed on the second power conductive segment 1222 , the second block 1212 is disposed on the fifth power conductive segment 1231 , the third block 1213 is disposed on the fourteenth power conductive segment 1241 , and the fourth block 1214 is disposed on the nineteenth power conductive segment 1251 .

[0139] The second mounting block 61 includes a fifth block 611 and a sixth block 612. The fifth block 611 is disposed on the third control terminal conductive plate, and the sixth block 612 is disposed on the fifth control terminal conductive plate. The first control terminal 71 is disposed on the fifth block 611. The second control terminal 72 is disposed on the sixth block 612.

[0140] The fifth block 611 and the third control terminal conductive plate as well as the sixth block 612 and the fifth control terminal conductive plate can be connected by welding or sintering. Of course, the fifth block 611 and the third control terminal conductive plate can be an integrally formed structure as well as the sixth block 612 and the fifth control terminal conductive plate can be an integrally formed structure.

[0141] Specifically, the fifth block 611 is disposed on the seventh control conductive segment 643 , and the sixth block 612 is disposed on the eighth control conductive segment 651 .

[0142] The test terminal conductive portion 110 further includes a third mounting block 1103, and the first end of the test terminal structure 100 is disposed on the third mounting block 1103. The first region of the test terminal conductive portion 110 is located in the package body 20, the second region of the test terminal conductive portion 110 is located on the third mounting block 1103, and the second through-hole structure 22 also exposes the second region of the test terminal conductive portion 110.

[0143] The third mounting block 1103 includes a seventh block 11031 and an eighth block 11032. The seventh block 11031 is disposed on the first test terminal conductive unit 1101, and the eighth block 11032 is disposed on the second test terminal conductive unit 1102. The first test terminal 101 is disposed on the seventh block 11031. The second test terminal 102 is disposed on the eighth block 11032.

[0144] The seventh block 11031 and the first test terminal conductive unit 1101 as well as the eighth block 11032 and the second test terminal conductive unit 1102 can be connected by welding process or sintering process. Of course, the seventh block 11031 and the first test terminal conductive unit 1101 can be an integrally molded structure as well as the eighth block 11032 and the second test terminal conductive unit 1102 can be an integrally molded structure.

[0145] Specifically, the seventh block 11031 is disposed on the second test conductive segment 11012 , and the eighth block 11032 is disposed on the fourth test conductive segment 11022 .

[0146] The test terminal structure 100 further includes a third test terminal. The third mounting block 1103 further includes a ninth block body, which is disposed on the second power terminal conductive unit 123. The third test terminal is disposed on the ninth block body.

[0147] The ninth block and the second power terminal conductive unit 123 can be connected by welding or sintering. Of course, the ninth block and the second power terminal conductive unit 123 can be an integrally formed structure. Specifically, the ninth block is disposed on the fifth power conductive segment 1231 .

[0148] like Figure 1 As shown, in this embodiment, the first through hole structure 21 is located at the end of the substrate 10. Such a configuration facilitates the arrangement of the power terminal structure 40, the chip conductive portion 11 and the power terminal conductive portion 12.

[0149] like Figure 1 As shown, in this embodiment, the cross section of the first through-hole structure 21 is polygonal or circular, and the first power terminal 41 includes a first connecting section 411, a second connecting section 412 and an extension section 413. The first connecting section 411 is connected to the first power terminal conductive unit 122, and the second connecting section 412 is located in the first through-hole structure 21 and is in contact with a part of the hole wall structure of the first through-hole structure 21. The first connecting section 411 can achieve the connection between the first power terminal 41 and the first power terminal conductive unit 122. The second connecting section 412 is located in the first through-hole structure 21 and is in contact with a part of the hole wall structure of the first through-hole structure 21, so that when the sealing part seals the gap between the first through-hole structure 21 and the power terminal structure 40, the area filled by the sealing part can be reduced.

[0150] When the portion of the power terminal structure 40 located outside the package body 20 extends toward the middle of the package body 20, that is, the extension section 413 extends toward the middle of the package body 20, the power terminal structure 40 can be connected to an external connector located on the side of the surface of the package body 20 away from the substrate 10. When the portion of the power terminal structure 40 located outside the package body 20 extends toward the side of the package body 20, that is, the extension section 413 extends toward the side of the package body 20, the power terminal structure 40 can be connected to an external connector located on the side of the package body 20.

[0151] The first power terminal 41, the second power terminal 42, the third power terminal 43 and the fourth power terminal 44 have the same structure, but the outer dimensions of the first power terminal 41, the second power terminal 42, the third power terminal 43 and the fourth power terminal 44 may be different, and the outer dimensions of the first power terminal 41, the second power terminal 42, the third power terminal 43 and the fourth power terminal 44 may be determined according to the current carried by the packaging structure. Specifically, the distance between the two side walls of the first power terminal 41 in the second direction and the distance between the two side walls of the second power terminal 42 in the second direction are both greater than the distance between the two side walls of the third power terminal 43 in the second direction, and the distance between the two side walls of the first power terminal 41 in the second direction and the distance between the two side walls of the second power terminal 42 in the second direction are both greater than the distance between the two side walls of the fourth power terminal 44 in the second direction, so that the first power terminal 41 and the second power terminal 42 can pass a larger current.

[0152] The second through-hole structure 22 exposes the second area of ​​the test terminal conductive part 110. The first through-hole structure 21 includes four first through-holes, and the first power terminal 41, the second power terminal 42, the third power terminal 43 and the fourth power terminal 44 are respectively arranged corresponding to a first through-hole. The second through-hole structure 22 includes two second through-holes, and the first control terminal 71 and the second control terminal 72 are respectively arranged corresponding to a second through-hole. The first test terminal 101 and the first control terminal 71 extend out of the package body 20 from the same second through-hole. The second test terminal 102, the second control terminal 72 and the third test terminal extend out of the package body from the same second through-hole. In this way, fewer through-holes are arranged on the package body, so that the test terminal structure 100, the power terminal structure 40 and the control terminal structure 70 can be extended, thereby ensuring the structural strength of the package body 20.

[0153] The projection of the first through hole corresponding to the first power terminal 41 on the substrate 10 is located within the projection area of ​​the first block 1211 on the substrate. The projection of the first through hole corresponding to the second power terminal 42 on the substrate 10 is located within the projection area of ​​the second block 1212 on the substrate 10. The projection of the first through hole corresponding to the third power terminal 43 on the substrate is located within the projection area of ​​the third block 1213 on the substrate 10. The projection of the first through hole corresponding to the fourth power terminal 44 on the substrate 10 is located within the projection area of ​​the fourth block 1214 on the substrate 10. This facilitates the connection between the power terminal structure 40 and the power terminal conductive portion 12. It can also prevent the glue from overflowing outside the first block 1211, the second block 1212 and the third block 1213 when the glue is poured into the first through hole structure 21.

[0154] The projection of the second through hole corresponding to the first test terminal 101 and the first control terminal 71 on the substrate 10 is located in the area surrounded by the projection of the seventh block 11031 on the substrate and the projection of the fifth block 611 on the substrate. This facilitates the connection between the first test terminal 101 and the seventh block 11031, and the connection between the first control terminal 71 and the fifth block 611. The projection of the second through hole corresponding to the second test terminal 102, the second control terminal 72 and the third test terminal on the substrate 10 is located in the area surrounded by the projection of the eighth block 11032 on the substrate 10, the projection of the sixth block 612 on the substrate 10 and the projection of the ninth block on the substrate 10. This facilitates the connection of the second test terminal 102 and the eighth block 11032, and the connection of the second control terminal 72 and the sixth block 612. It can also prevent the glue from overflowing outside the seventh block 11031 , the fifth block 611 , the eighth block 11032 , the sixth block 612 and the ninth block when the glue is poured into the second through hole structure 22 .

[0155] When the cross-section of the first through-hole structure 21 is a polygon, the cross-section of the first through-hole structure 21 may be a quadrilateral, a pentagon or a hexagon, and of course may also be other polygons. The partial structural fit between the second connecting segment 412 and the hole wall surface of the first through-hole structure 21 refers to the fit between the second connecting segment 412 and at least one side wall of the first through-hole structure 21.

[0156] When the cross section of the first through hole structure 21 is circular, the second connecting section 412 fits with a partial area of ​​the first through hole structure 21 .

[0157] The cross section of the second through hole structure 22 is polygonal or circular. When the cross section of the second through hole structure is polygonal, the cross section of the second through hole structure may be a quadrilateral, a pentagon or a hexagon, and may also be other polygons.

[0158] In this embodiment, the cross section of the first through hole structure 21 is rectangular, and the cross section of the second through hole structure 22 is rectangular. Specifically, different structures of the power terminal structure 40, the test terminal structure 100, and the control terminal structure 70 can be used according to the application scenario of the packaging structure.

[0159] It should be noted that the material of the substrate 10 is ceramic, and the material of the chip conductive part 11, the power terminal conductive part 12, the control terminal conductive part 60 and the test terminal conductive part 110 are all copper. The packaging structure also includes a heat-conducting metal plate arranged on the side of the substrate facing the heat dissipation structure. The material of the heat-conducting metal plate is copper. The heat-conducting metal plate, the substrate 10, the chip conductive part 11, the power terminal conductive part 12, the control terminal conductive part 60 and the test terminal conductive part 110 together constitute a copper-clad ceramic substrate. The copper-clad ceramic substrate can be a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The heat dissipation metal plate and the copper-clad ceramic substrate are connected by a welding process or a sintering process.

[0160] When manufacturing the packaging structure of this embodiment, after the packaging body is injection molded, the power terminal structure 40 is connected to the power terminal conductive part 12, the control terminal structure 70 is connected to the control terminal conductive part 60, and the test terminal structure 100 is connected to the test terminal conductive part 110. This facilitates the connection of the copper-clad ceramic substrate and the heat dissipation metal plate through the sintering process, and also facilitates the sintering of the chip structure 30 and the chip conductive part 11 as well as the sintering of the chip structure 30 and the connection structure 50. That is, when sintering the copper-clad ceramic substrate and the heat dissipation metal plate, the power terminal structure 40, the control terminal structure 70, and the test terminal structure 100 will not interfere with the sintering of the copper-clad ceramic substrate and the heat dissipation metal plate, nor will they interfere with the sintering of the chip structure 30 and the chip conductive part 11 as well as the sintering of the chip structure 30 and the connection structure 50.

[0161] Specifically, when using the sintering process, a mold is required to contact the structure to be sintered. Therefore, if the power terminal structure 40 is first connected to the power terminal conductive part 12, the control terminal structure 70 is connected to the control terminal conductive part 60, and the test terminal structure 100 is connected to the test terminal conductive part 110, the power terminal structure 40, the control terminal structure 70 and the test terminal structure 100 will interfere with the mold.

[0162] like Fig.15 As shown, the packaging module of this embodiment includes a plurality of packaging structures arranged at intervals, and the packaging structure is the above-mentioned packaging structure. When the above-mentioned packaging structure is in use, the packaging body 20 and the sealing portion can encapsulate the power terminal conductive portion 12 in the packaging body 20, and then the power terminal conductive portion 12 can be isolated from the outside of the packaging body 20, thereby protecting the power terminal conductive portion 12. The packaging module with the above-mentioned packaging structure also has the above-mentioned advantages.

[0163] The packaging module of this embodiment is a silicon carbide power electronic module.

[0164] It should be noted that the encapsulation module includes three encapsulation structures, and the three encapsulation structures form a three-phase full-bridge structure. The three encapsulation structures are arranged at intervals in the second direction, and are respectively the first encapsulation structure, the second encapsulation structure and the third encapsulation structure. The encapsulation body 20 of the three encapsulation structures is an integrated structure, specifically, the side of the encapsulation body of the first encapsulation structure facing the side of the encapsulation body of the second encapsulation structure facing the side of the encapsulation body of the first encapsulation structure, and the side of the encapsulation body of the second encapsulation structure facing the side of the encapsulation body of the third encapsulation structure facing the side of the encapsulation body of the second encapsulation structure.

[0165] like Fig.16 As shown, the manufacturing method of the packaging structure of this embodiment is used to manufacture the above-mentioned packaging structure, and the manufacturing method includes:

[0166] Obtaining a substrate 10 and a power terminal conductive portion 12;

[0167] Connecting the chip structure 30 to the substrate 10;

[0168] A package body 20 is formed on the substrate 10, and a first through-hole structure 21 is formed on the package body 20, so that the package body 20 encapsulates a first region of the power terminal conductive portion 12, and a second region of the power terminal conductive portion 12 is exposed through the first through-hole structure 21;

[0169] connecting the power terminal structure 40 and the second region of the power terminal conductive portion 12;

[0170] A sealing portion is disposed in the gap between the first through-hole structure 21 and the power terminal structure 40 .

[0171] Through the above arrangement, the package body 20 and the sealing portion can encapsulate the chip structure 30 and the power terminal structure 40 .

[0172] The steps of obtaining the substrate 10 and the power terminal conductive portion 12 include:

[0173] The substrate 10 , the chip conductive portion 11 and the power terminal conductive portion 12 are obtained.

[0174] The step of connecting the chip structure 30 to the substrate 10 includes:

[0175] The chip structure 30 is connected to the chip conductive portion 11 .

[0176] Through the above arrangement, the chip conductive part can be obtained, and the chip structure 30 is connected to the chip conductive part 11 .

[0177] The method after obtaining the substrate 10, the chip conductive portion 11 and the power terminal conductive portion 12 includes:

[0178] The control terminal conductive portion 60 and the test terminal conductive portion 110 are obtained.

[0179] The method of connecting the chip structure 30 to the chip conductive portion 11 includes:

[0180] The chip structure 30 and the chip conductive portion 11 are connected by a sintering process or a welding process.

[0181] Through the above arrangement, the chip structure 30 and the chip conductive part 11 can be connected.

[0182] The method of connecting the chip structure 30 and the chip conductive part 11 by using a sintering process or a welding process includes:

[0183] Connecting the plurality of first chips 31 and the first chip conductive unit 111 by using a sintering process or a welding process;

[0184] Connecting the plurality of second chips 32 and the second chip conductive units 112 by using a sintering process or a welding process;

[0185] Connecting the plurality of third chips 33 and the third chip conductive unit 113 by using a sintering process or a welding process;

[0186] The plurality of fourth chips 34 and the fourth chip conductive units 114 are connected by a sintering process or a welding process.

[0187] Through the above configuration, multiple first chips 31 and first chip conductive units 111 , multiple second chips 32 and second chip conductive units 112 , multiple third chips and third chip conductive units 113 , and multiple fourth chips 34 and fourth chip conductive units 114 can be connected.

[0188] The method after connecting the chip structure 30 to the chip conductive part 11 includes:

[0189] Connecting the chip structure 30 to the power terminal structure 40;

[0190] Connecting the gate of the chip structure 30 to the control terminal structure 70;

[0191] Connecting the first chip conductive unit 111 to the second power terminal conductive unit 123;

[0192] The third chip conducting unit 113 is connected to the second power terminal conducting unit 123 .

[0193] Through the above configuration, the chip structure 30 and the power terminal structure 40 can be connected, and the gate of the chip structure 30 and the control terminal structure 70 can be connected.

[0194] The method of connecting the first chip conductive unit 111 with the second power terminal conductive unit 123 includes:

[0195] The first curved plate 80 is connected to the first chip conductive unit 111 and the second power terminal conductive unit 123 .

[0196] The method of connecting the third chip conductive unit 113 with the second power terminal conductive unit 123 includes:

[0197] The second curved plate 90 is connected to the third chip conductive unit 113 and the second power terminal conductive unit 123 .

[0198] The method of connecting the chip structure 30 to the power terminal structure 40 includes:

[0199] Connecting the plurality of first chips 31 and the first power terminal conductive unit 122 via a connecting structure;

[0200] connecting the plurality of second chips 32 and the second power terminal conductive unit 123 via a connecting structure;

[0201] Connecting the plurality of third chips 33 and the first power terminal conductive unit 122 via a connecting structure;

[0202] The plurality of fourth chips 34 and the second power terminal conductive unit 123 are connected via a connection structure.

[0203] Through the above-mentioned setting, connection between multiple first chips 31 and the first power terminal conductive unit 122, multiple second chips 32 and the second power terminal conductive unit 123, multiple third chips 33 and the first power terminal conductive unit 122, and multiple fourth chips 34 and the second power terminal conductive unit 123 can be achieved.

[0204] The method of connecting the gate of the chip structure 30 to the control terminal structure 70 includes:

[0205] Connecting the gates of the plurality of first chips 31 to the first control terminal conductive unit 62;

[0206] Connecting the gates of the plurality of second chips 32 to the second control terminal conductive unit 63;

[0207] Connecting the gates of the plurality of third chips 33 to the first control terminal conductive unit 62;

[0208] The gates of the plurality of fourth chips 34 are connected to the second control terminal conducting unit 63 .

[0209] Through the above configuration, the gate of the chip structure 30 can be connected to the control terminal structure 70 .

[0210] The method before connecting the power terminal structure 40 and the second region of the power terminal conductive portion 12 includes:

[0211] The substrate 10 is connected to the heat dissipation structure through a sintering process or a welding process.

[0212] Through the above arrangement, the connection between the substrate 10 and the heat dissipation structure can be achieved.

[0213] In this embodiment, the step of forming the package body 20 on the substrate 10 includes:

[0214] The mold 200 is disposed on the substrate 10, and the package body 20 is formed by injection molding in the mold 200;

[0215] The mold 200 includes a main body 201 having an injection cavity 2011 . An injection hole 2012 communicating with the injection cavity 2011 is disposed on the top wall of the main body 201 . A separation cylinder 20111 is disposed in the injection cavity 2011 . The separation cylinder 20111 is used to form a first through hole structure 21 .

[0216] It should be noted that if Figure 12 to Figure 14 As shown, the separation cylinder 20111 includes a plurality of separation cylinders, a portion of which is used to form the first through-hole structure 21, and another portion of which is used to form the second through-hole structure 22, that is, when the package body 20 is formed by injection molding using a mold, the first through-hole structure 21 and the second through-hole structure 22 are formed simultaneously, and the second through-hole structure 22 exposes the second area of ​​the control terminal conductive part 60 and the second area of ​​the control test terminal conductive part 110. The material of the mold 200 is PTFE (polytetrafluoroethylene), and the material of the package body is epoxy resin, and the mold will not adhere to the epoxy resin after injection molding.

[0217] Through the above configuration, the package body 20 can be formed by using the mold 200 , and the separation cylinder 20111 can be provided to prevent the molding compound from flowing onto the first mounting block 121 , the second mounting block 61 and the third mounting block 1103 .

[0218] The method after connecting the power terminal structure 40 and the second region of the power terminal conductive portion 12 includes:

[0219] connecting the control terminal structure 70 and the second region of the control terminal conductive portion 60;

[0220] The test terminal structure 100 and the second region of the test terminal conductive portion 110 are connected.

[0221] Through the above arrangement, the control terminal structure 70 and the control terminal conductive portion 60 can be connected, and the test terminal structure 100 and the test terminal conductive portion 110 can be connected.

[0222] The method after providing a sealing portion in the gap between the first through-hole structure 21 and the power terminal structure 40 includes:

[0223] A sealing portion is also formed between the second through-hole structure 22 and the control terminal structure 70 .

[0224] Through the above configuration, it is possible to isolate the inside of the package 20 from the outside of the package 20 .

[0225] It should be noted that the sealing portion can be formed by glue potting or injection molding, and both glue potting and injection molding can fill the gap between the first through-hole structure and the power terminal structure to protect the power terminal structure and the first mounting block.

[0226] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0227] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein are interpreted accordingly.

[0228] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0229] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A packaging structure, characterized in that: include: A substrate (10), wherein a power terminal conductive portion (12) is provided on the substrate (10); A package body (20) is arranged on the substrate (10) and encapsulates a first region of the power terminal conductive portion (12), wherein a first through-hole structure (21) is arranged on the package body (20), and the first through-hole structure (21) exposes a second region of the power terminal conductive portion (12); A chip structure (30) disposed on the substrate (10) and located in the package (20); a power terminal structure (40) passing through the first through-hole structure (21), a first end of the power terminal structure (40) being connected to a second region of the power terminal conductive portion (12) and being conductively connected to the chip structure (30), and a second end of the power terminal structure (40) passing through the first through-hole structure (21); The chip structure (30) comprises a first chip (31), and the packaging structure further comprises a connection structure (50), wherein the connection structure (50) is arranged between the first chip (31) and the power terminal conductive portion (12); The connection structure (50) comprises a first connection portion (51), a second connection portion (52) and a third connection portion (53); the third connection portion (53) is connected between a side of the first connection portion (51) facing the second connection portion (52) and a side of the second connection portion (52) facing the first connection portion (51); the first connection portion (51) is connected to a surface of the chip structure (30) away from the substrate (10); and the second connection portion (52) is arranged on the power terminal conductive portion (12); The third connection portion (53) comprises a connection bridge (531), and in a direction from the first connection portion (51) to the second connection portion (52), the distance between a side of the connection bridge (531) facing the substrate (10) and the substrate (10) first increases and then decreases.

2. The packaging structure according to claim 1, characterized in that: The power terminal conductive portion (12) comprises a first mounting block (121), the first mounting block (121) is arranged on the substrate (10), and the second area of ​​the power terminal conductive portion (12) is located on the first mounting block (121).

3. The packaging structure according to claim 1, characterized in that: The projection of the first end of the power terminal structure (40) on the substrate (10) is located within the projection area of ​​the first through hole structure (21) on the substrate (10).

4. The packaging structure according to claim 1, characterized in that: The chip structure (30) comprises a plurality of the first chips (31); the first connection portion (51) comprises a plurality of first connection blocks (511) and at least one second connection block (512); each of the first connection blocks (511) is connected to a corresponding first chip (31); and a second connection block (512) is provided between any two of the first connection blocks (511).

5. The packaging structure according to claim 4, characterized in that: A plurality of the first chips (31) are arranged at intervals along a first direction, and in the first direction, a distance between a side of the second connection block (512) facing the substrate (10) and the substrate (10) first increases and then decreases.

6. The packaging structure according to claim 1, characterized in that: The packaging structure further comprises a control terminal conductive portion (60) and a control terminal structure (70); the control terminal conductive portion (60) is arranged on the substrate (10); a first region of the control terminal conductive portion (60) is located within the packaging body (20); a second through-hole structure (22) is arranged on the packaging body (20); the second through-hole structure (22) exposes a second region of the control terminal conductive portion (60); the control terminal structure (70) is penetrated through the second through-hole structure (22); a first end of the control terminal structure (70) is connected to the second region of the control terminal conductive portion (60) and is conductively connected to the chip structure (30); and a second end of the control terminal structure (70) penetrates the second through-hole structure (22).

7. The packaging structure according to claim 6, characterized in that: The control terminal conductive part (60) comprises a second mounting block (61) arranged on the substrate (10), and the second area of ​​the control terminal conductive part (60) is located on the second mounting block (61).

8. The packaging structure according to claim 1, characterized in that: The chip structure (30) further comprises a second chip (32), wherein the first chip (31) and the second chip (32) are arranged on the substrate (10) at an interval; The power terminal structure (40) comprises a first power terminal (41), a second power terminal (42) and a third power terminal (43); the power terminal conductive portion (12) comprises a first power terminal conductive unit (122), a second power terminal conductive unit (123) and a third power terminal conductive unit (124); the first power terminal (41) is arranged on the first power terminal conductive unit (122), the second power terminal (42) is arranged on the second power terminal conductive unit (123), and the third power terminal (43) is arranged on the third power terminal conductive unit (124); The surface of the first chip (31) away from the substrate (10) is conductively connected to the first power terminal (41), the surface of the first chip (31) facing the substrate (10) is conductively connected to the second power terminal (42), the surface of the second chip (32) away from the substrate (10) is conductively connected to the second power terminal (42), and the surface of the second chip (32) facing the substrate (10) is conductively connected to the third power terminal (43).

9. The packaging structure according to any one of claims 1 to 8, characterized in that: The first through hole structure (21) is located at an end of the substrate (10).

10. The packaging structure according to claim 8, characterized in that: The cross section of the first through-hole structure (21) is polygonal or circular, the first power terminal (41) comprises a first connecting section (411), a second connecting section (412) and an extension section (413), the first connecting section (411) being connected to the first power terminal conductive unit (122), the second connecting section (412) being located in the first through-hole structure (21) and being in contact with a part of the hole wall surface of the first through-hole structure (21).

11. The packaging structure according to any one of claims 1 to 8, characterized in that: The packaging structure also includes a sealing portion, which is filled and arranged in the first through-hole structure (21) to seal the gap between the first through-hole structure (21) and the power terminal structure (40).

12. A packaging module, comprising a plurality of packaging structures arranged at intervals, characterized in that: The packaging structure is the packaging structure according to any one of claims 1 to 11.

13. A method for manufacturing a packaging structure, characterized in that: Used to manufacture the packaging structure according to any one of claims 1 to 11, the manufacturing method comprising: Obtaining a substrate (10) and a power terminal conductive portion (12); connecting the chip structure (30) to the substrate (10); Forming a package body (20) on the substrate (10), and forming a first through-hole structure (21) on the package body (20), so that the package body (20) encapsulates a first region of the power terminal conductive portion (12), and a second region of the power terminal conductive portion (12) is exposed through the first through-hole structure (21); Connecting the power terminal structure (40) and the second region of the power terminal conductive portion (12); A sealing portion is provided in a gap between the first through-hole structure (21) and the power terminal structure (40).

14. The manufacturing method according to claim 13, characterized in that: The step of forming a package body (20) on the substrate (10) comprises: Arranging a mold (200) on the substrate (10), and forming the package body (20) by injection molding in the mold (200); The mold (200) comprises a main body (201), the main body (201) having an injection cavity (2011), an injection hole (2012) connected to the injection cavity (2011) being arranged on the top wall of the main body (201), a separation cylinder (20111) being arranged in the injection cavity (2011), and the separation cylinder (20111) being used to form the first through hole structure (21).

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