Nonreciprocal phase shifter

Abstract

The invention discloses a non-reciprocal phase shifter, and relates to the technical field of information communication, the non-reciprocal phase shifter is printed on the upper surface of a dielectric substrate, and the non-reciprocal phase shifter comprises a first radio frequency filtering structure, a second radio frequency filtering structure and a time-varying modulation resonant ring; the first radio frequency filtering structure and the second radio frequency filtering structure are both connected with the time-varying modulation resonant ring; the first radio frequency filtering structure and the second radio frequency filtering structure are both in short circuit connection with the metal on the lower surface of the dielectric substrate. According to the invention, non-reciprocal phase shift is realized by arranging the time-varying modulation resonant ring and utilizing a single phase shifter.

Description

Technical Field

[0001] The present application relates to the field of information and communication technology, and in particular to a non-reciprocal phase shifter. Background Art

[0002] A phase shifter is a common microwave device that can adjust the phase of electromagnetic waves. It can change the phase of the input RF signal and then output it. It is often used in phased array antennas, radar systems, and communication systems. The working principle of the phase shifter is to adjust the phase of the input signal based on the control signal. Depending on the implementation method, the phase shifter can use a variety of technical principles to achieve phase shift, mainly including the following: (1) voltage-controlled phase shift, where the input signal passes through a capacitor voltage controller and the control voltage is used to adjust the electric field strength and phase difference of the capacitor, thereby changing the phase of the input signal; (2) transistor-controlled phase shift, using the amplification and nonlinear characteristics of the transistor to change the phase of the signal by adjusting the bias current of the transistor or the amplitude of the input signal; (3) LC circuit-controlled phase shift, by adjusting the values ​​of the inductor and capacitor, changing the resonant frequency and impedance of the circuit, thereby adjusting the phase of the input signal.

[0003] Non-reciprocal phase shifting means that the phase shift of the RF signal fed into RF port 1 and output from RF port 2 is different from the phase shift of the RF signal fed into RF port 2 and output from RF port 1. It is difficult for existing microwave devices to achieve non-reciprocal phase shifting through a single phase shifter. Summary of the invention

[0004] The purpose of the present application is to provide a non-reciprocal phase shifter, which can achieve non-reciprocal phase shifting through a single phase shifter.

[0005] To achieve the above objectives, this application provides the following solutions:

[0006] The present application provides a non-reciprocal phase shifter, which is printed on the upper surface of a dielectric substrate, and includes: a first radio frequency filtering structure, a second radio frequency filtering structure, and a time-varying modulation resonant ring;

[0007] The first radio frequency filter structure and the second radio frequency filter structure are both connected to the time-varying modulation resonant ring; the first radio frequency filter structure and the second radio frequency filter structure are both short-circuited to the metal on the lower surface of the dielectric substrate.

[0008] Optionally, the time-varying modulation resonant ring includes: a double-loop microstrip line structure and a plurality of time-varying modulation signal circuits;

[0009] A plurality of the time-varying modulation signal circuits are all connected to the dual-loop microstrip line structure.

[0010] Optionally, the double-loop microstrip line structure includes a first horizontal microstrip line, a second horizontal microstrip line, a third horizontal microstrip line, a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line and a fourth vertical microstrip line;

[0011] The first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are arranged in parallel at equal intervals;

[0012] The first end of the first horizontal microstrip line and the first end of the second horizontal microstrip line are connected through the first vertical microstrip line;

[0013] The second end of the first horizontal microstrip line and the second end of the second horizontal microstrip line are connected through the second vertical microstrip line;

[0014] The first end of the second horizontal microstrip line and the first end of the third horizontal microstrip line are connected through the third vertical microstrip line;

[0015] The second end of the second horizontal microstrip line and the second end of the third horizontal microstrip line are connected via the fourth vertical microstrip line;

[0016] The first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are respectively connected to a corresponding time-varying modulation signal circuit.

[0017] Optionally, the lengths of the first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are all equal; the lengths of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all equal.

[0018] Optionally, the structures of the multiple time-varying modulation signal circuits are the same;

[0019] The time-varying modulation signal circuit comprises: a varactor diode, a capacitor and an inductor;

[0020] The positive electrode of the varactor diode is grounded;

[0021] The cathode of the varactor diode, one end of the capacitor and one end of the inductor are connected;

[0022] The other end of the inductor serves as an input port of the time-varying modulation signal circuit;

[0023] The other end of the capacitor serves as an output port of the time-varying modulation signal circuit and is connected to the corresponding vertical microstrip line in the double-loop microstrip line structure; the corresponding vertical microstrip line in the double-loop microstrip line structure includes: the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line.

[0024] Optionally, the first radio frequency filtering structure includes a fourth horizontal microstrip line and a first radio frequency signal input / output port;

[0025] A first metallized through hole is disposed at a first end point of the fourth horizontal microstrip line;

[0026] The second metallized through hole is arranged at the second end point of the fourth horizontal microstrip line;

[0027] A third metallized through hole is disposed between the first metallized through hole and the second metallized through hole;

[0028] The first metallized through hole, the second metallized through hole and the third metallized through hole all penetrate the dielectric substrate and the fourth horizontal microstrip line;

[0029] The fourth horizontal microstrip line is connected to the first RF signal input / output port through a fifth vertical microstrip line; the intersection of the fifth vertical microstrip line and the fourth horizontal microstrip line is between the first metallized through hole and the third metallized through hole;

[0030] The fourth horizontal microstrip line is connected to the first horizontal microstrip line through a sixth vertical microstrip line; and an intersection of the sixth vertical microstrip line and the fourth horizontal microstrip line is between the second metallized through hole and the third metallized through hole.

[0031] Optionally, the second radio frequency filtering structure includes a fifth horizontal microstrip line and a second radio frequency signal input / output port;

[0032] A fourth metallized through hole is disposed at a first end point of the fifth horizontal microstrip line;

[0033] A fifth metallized through hole is disposed at the second end point of the fifth horizontal microstrip line;

[0034] A sixth metallized through hole is disposed between the fourth metallized through hole and the fifth metallized through hole;

[0035] The fourth metallized through hole, the fifth metallized through hole and the sixth metallized through hole all penetrate the dielectric substrate and the fifth horizontal microstrip line;

[0036] The fifth horizontal microstrip line is connected to the second RF signal input / output port through a seventh vertical microstrip line; the intersection of the seventh vertical microstrip line and the fifth horizontal microstrip line is between the fourth metallized through hole and the sixth metallized through hole;

[0037] The fifth horizontal microstrip line is connected to the third horizontal microstrip line through an eighth vertical microstrip line; and an intersection of the eighth vertical microstrip line and the fifth horizontal microstrip line is between the fifth metallized through hole and the sixth metallized through hole.

[0038] Optionally, the characteristic impedances of the first horizontal microstrip line, the second horizontal microstrip line, the third horizontal microstrip line, the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all 80 ohms;

[0039] The characteristic impedances of the fourth horizontal microstrip line and the fifth horizontal microstrip line are both 50 ohms;

[0040] The characteristic impedances of the fifth vertical microstrip line, the sixth vertical microstrip line, the seventh vertical microstrip line, and the eighth vertical microstrip line are all 40 ohms.

[0041] Optionally, the sum of the first distance and the second distance is half of the wavelength of the medium; the first distance is the distance from the first metallized through hole to the first intersection; the first intersection is the intersection of the fourth horizontal microstrip line and the fifth vertical microstrip line; the second distance is the distance from the third metallized through hole to the first intersection;

[0042] The first distance is one quarter of the second distance;

[0043] The sum of the third distance and the fourth distance is half of the wavelength of the medium; the third distance is the distance from the third metallized through hole to the second intersection; the second intersection is the intersection of the fourth horizontal microstrip line and the sixth vertical microstrip line; the fourth distance is the distance from the second metallized through hole to the second intersection;

[0044] The fourth distance is one quarter of the third distance;

[0045] The fifth distance is randomly set according to the size of the dielectric substrate; the fifth distance is the length of the sixth vertical microstrip line;

[0046] The sixth distance is one quarter of the wavelength of the medium; the sixth distance is the distance from the first end of the first horizontal microstrip line to the third intersection; the third intersection is the intersection of the sixth vertical microstrip line and the first horizontal microstrip line;

[0047] The seventh distance is one quarter of the wavelength of the medium; the seventh distance is the length of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line or the fourth vertical microstrip line;

[0048] The eighth distance is half of the wavelength of the medium; the eighth distance is the length of the first horizontal microstrip line, the second horizontal microstrip line or the third horizontal microstrip line.

[0049] Optionally, the frequencies of the modulation signals input into the multiple time-varying modulation signal circuits are the same;

[0050] The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the first vertical microstrip line is

[0051] The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the second vertical microstrip line is

[0052] The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the third vertical microstrip line is

[0053] The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the fourth vertical microstrip line is

[0054] According to the specific embodiments provided in this application, this application discloses the following technical effects:

[0055] The present application provides a non-reciprocal phase shifter, which is printed on the upper surface of a dielectric substrate. The non-reciprocal phase shifter includes: a first radio frequency filter structure, a second radio frequency filter structure and a time-varying modulation resonant ring; the first radio frequency filter structure and the second radio frequency filter structure are both connected to the time-varying modulation resonant ring; the first radio frequency filter structure and the second radio frequency filter structure are both short-circuited to the metal on the lower surface of the dielectric substrate. As a multifunctional integrated device, it can realize the phase shifting function of the input radio frequency signal and the non-reciprocal phase shifting between the two radio frequency ports. One device realizes the functions of two devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0057] Figure 1 Schematic diagram of the structure of a non-reciprocal phase shifter in one embodiment of the present application.

[0058] Figure 2 FIG. 1 is a graph showing an input return loss curve of a non-reciprocal phase shifter in an embodiment of the present application.

[0059] Figure 3 FIG. 4 is a phase shift curve diagram of a non-reciprocal phase shifter in an embodiment of the present application.

[0060] Explanation of the reference numerals: first radio frequency filtering structure-1; second radio frequency filtering structure-2; time-varying modulation resonant ring-3. DETAILED DESCRIPTION

[0061] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0062] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0063] In an exemplary embodiment, Figure 1 As shown, a non-reciprocal phase shifter is provided. The non-reciprocal phase shifter is printed on the upper surface of a dielectric substrate. The non-reciprocal phase shifter includes: a first RF filter structure 1, a second RF filter structure 2 and a time-varying modulation resonant ring 3; the first RF filter structure 1 and the second RF filter structure 2 are both connected to the time-varying modulation resonant ring 3; the first RF filter structure 1 and the second RF filter structure 2 are both short-circuited to the metal on the lower surface of the dielectric substrate.

[0064] The non-reciprocal phase shifter structure provided by the present invention is as follows Figure 1 As shown, a microstrip line structure is adopted. The non-reciprocal phase shifter structure is printed on the top layer of the dielectric substrate, and the bottom layer of the dielectric substrate is a complete metal ground. According to the PCB processing technology, the top layer and the bottom layer are generally copper foil. The non-reciprocal phase shifter structure includes a first RF filter structure 1 and a second RF filter structure 2, and a time-varying modulation resonant ring 3. The first RF filter structure 1 and the second RF filter structure 2 play the role of bandpass filtering, ensuring that the operating frequency can be transmitted while suppressing the transmission of out-of-band useless signals.

[0065] Wherein, the time-varying modulation resonant ring includes: a double-loop microstrip line structure and a plurality of time-varying modulation signal circuits; the plurality of time-varying modulation signal circuits are all connected to the double-loop microstrip line structure. The double-loop microstrip line structure includes a first horizontal microstrip line, a second horizontal microstrip line, a third horizontal microstrip line, a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line and a fourth vertical microstrip line; the first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are arranged in parallel at equal intervals; the first end of the first horizontal microstrip line and the first end of the second horizontal microstrip line are connected through the first vertical microstrip line; the second end of the first horizontal microstrip line and the second end of the second horizontal microstrip line are connected through the second vertical microstrip line; the first end of the second horizontal microstrip line and the first end of the third horizontal microstrip line are connected through the third vertical microstrip line; the second end of the second horizontal microstrip line and the second end of the third horizontal microstrip line are connected through the fourth vertical microstrip line; the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are respectively connected to a corresponding time-varying modulation signal circuit. The lengths of the first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are all equal; the lengths of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all equal.

[0066] The structures of multiple time-varying modulation signal circuits are the same; the time-varying modulation signal circuit includes: a varactor diode, a capacitor and an inductor; the positive electrode of the varactor diode is grounded; the negative electrode of the varactor diode, one end of the capacitor and one end of the inductor are connected; the other end of the inductor serves as the input port of the time-varying modulation signal circuit; the other end of the capacitor serves as the output port of the time-varying modulation signal circuit and is connected to the corresponding vertical microstrip line in the double-loop microstrip line structure; the corresponding vertical microstrip line in the double-loop microstrip line structure includes: a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line and a fourth vertical microstrip line.

[0067] The time-varying modulation resonant ring 3 includes a microstrip line with a characteristic impedance of 80 ohms and four time-varying modulation signal circuits. The physical length parameters of the resonant ring satisfy: l6 = one-quarter dielectric wavelength, l7 = one-quarter dielectric wavelength, l8 = one-half dielectric wavelength. The four time-varying modulation signal circuits have the same structure, including: (grounded) varactor diodes, capacitors and inductors. One end of each time-varying modulation signal circuit is connected to the resonant ring, and the other end is a modulation signal input port.

[0068] The first radio frequency filtering structure includes a fourth horizontal microstrip line and a first radio frequency signal input / output port; a first metallized through hole is arranged at a first end point of the fourth horizontal microstrip line; a second metallized through hole is arranged at a second end point of the fourth horizontal microstrip line; a third metallized through hole is arranged between the first metallized through hole and the second metallized through hole; the first metallized through hole, the second metallized through hole and the third metallized through hole all penetrate the dielectric substrate and the fourth horizontal microstrip line; the fourth horizontal microstrip line is connected to the first radio frequency signal input / output port through a fifth vertical microstrip line; the intersection of the fifth vertical microstrip line and the fourth horizontal microstrip line is between the first metallized through hole and the third metallized through hole; the fourth horizontal microstrip line is connected to the first horizontal microstrip line through a sixth vertical microstrip line; the intersection of the sixth vertical microstrip line and the fourth horizontal microstrip line is between the second metallized through hole and the third metallized through hole.

[0069] The second radio frequency filtering structure includes a fifth horizontal microstrip line and a second radio frequency signal input / output port; a fourth metallized through hole is arranged at a first end point of the fifth horizontal microstrip line; a fifth metallized through hole is arranged at a second end point of the fifth horizontal microstrip line; a sixth metallized through hole is arranged between the fourth metallized through hole and the fifth metallized through hole; the fourth metallized through hole, the fifth metallized through hole and the sixth metallized through hole all penetrate the dielectric substrate and the fifth horizontal microstrip line; the fifth horizontal microstrip line is connected to the second radio frequency signal input / output port through the seventh vertical microstrip line; the intersection of the seventh vertical microstrip line and the fifth horizontal microstrip line is between the fourth metallized through hole and the sixth metallized through hole; the fifth horizontal microstrip line is connected to the third horizontal microstrip line through the eighth vertical microstrip line; the intersection of the eighth vertical microstrip line and the fifth horizontal microstrip line is between the fifth metallized through hole and the sixth metallized through hole.

[0070] One end of the first RF filter structure 1 and the second RF filter structure 2 is a RF signal input / output port. The RF signal ports corresponding to the first RF filter structure 1 and the second RF filter structure 2 are RF port 1 and RF port 2, respectively. The length of the microstrip line of the RF port is not specifically limited. Generally, enough space can be left for welding the RF connector. The width of the microstrip line is determined by its characteristic impedance, which is generally 50 ohms. The other ends of the first RF filter structure 1 and the second RF filter structure 2 are connected to the time-varying modulation resonant ring 3. The length of the microstrip line at the connection is l5, which can be taken as one-eighth of the dielectric wavelength. The width of the microstrip line is determined by its characteristic impedance, which is generally 50 ohms. The first RF filter structure 1 and the second RF filter structure 2 are the same in structural parameters. They are both composed of two sections of one-half dielectric wavelength microstrip lines with short-circuited grounding at both ends (the white round hole is a metallized through hole, which short-circuit connects the top microstrip line and the bottom metal ground). l1 to l8 represent the first distance to the eighth distance respectively, and the physical length parameter satisfies l1+l2=l3+l4=half dielectric wavelength. Generally, the length of microstrip line l1 is about one-fourth of l2, and the length of microstrip line l4 is about one-fourth of l3. The width of two short-circuited and grounded microstrip lines of half the dielectric wavelength is determined by their characteristic impedance, which is generally 40 ohms.

[0071] The characteristic impedances of the first horizontal microstrip line, the second horizontal microstrip line, the third horizontal microstrip line, the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all 80 ohms. The characteristic impedances of the fourth horizontal microstrip line and the fifth horizontal microstrip line are all 50 ohms. The characteristic impedances of the fifth vertical microstrip line, the sixth vertical microstrip line, the seventh vertical microstrip line and the eighth vertical microstrip line are all 40 ohms.

[0072] The sum of the first distance and the second distance is half of the wavelength of the medium. The first distance is the distance from the first metallized through hole to the first intersection. The first intersection is the intersection of the fourth horizontal microstrip line and the fifth vertical microstrip line. The second distance is the distance from the third metallized through hole to the first intersection.

[0073] The first distance is one quarter of the second distance.

[0074] The sum of the third distance and the fourth distance is half of the wavelength of the medium. The third distance is the distance from the third metallized through hole to the second intersection. The second intersection is the intersection of the fourth horizontal microstrip line and the sixth vertical microstrip line. The fourth distance is the distance from the second metallized through hole to the second intersection.

[0075] The fourth distance is one quarter of the third distance.

[0076] The fifth distance is randomly set according to the size of the dielectric substrate; the fifth distance is the length of the sixth vertical microstrip line.

[0077] The sixth distance is one quarter of the wavelength of the medium. The sixth distance is the distance from the first end of the first horizontal microstrip line to the third intersection. The third intersection is the intersection of the sixth vertical microstrip line and the first horizontal microstrip line.

[0078] The seventh distance is one quarter of the wavelength of the medium. The seventh distance is the length of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line or the fourth vertical microstrip line.

[0079] The eighth distance is one half of the wavelength of the medium. The eighth distance is the length of the first horizontal microstrip line, the second horizontal microstrip line or the third horizontal microstrip line.

[0080] The frequencies of the modulation signals input to the multiple time-varying modulation signal circuits are the same. The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the first vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the second vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the third vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the fourth vertical microstrip line is

[0081] A method for realizing control of non-reciprocal phase shift between RF port 1 (i.e., first RF signal input / output port) and RF port 2 (i.e., second RF signal input / output port):

[0082] The same DC bias voltage V is fed into the input ports of the four time-varying modulation signal circuits. DC This voltage value is used to control the reverse capacitance value of the grounded varactor diode, which plays a role in adjusting the operating frequency of the phase shifter.

[0083] The input ports of the four time-varying modulation signal circuits are all fed with low-frequency modulation signals of the same frequency, which are all f m , and control the initial phase as

[0084] When a radio frequency signal with a frequency of f0 is fed into the radio frequency port 1 and output from the radio frequency port 2, the radio frequency signal with a frequency of f0 will generate When the RF signal with a frequency of f0 is fed into RF port 2 and output from RF port 1, the RF signal with a frequency of f0 will produce a phase shift. The phase shift of the two is Control the initial phase parameters of the low-frequency modulation signal fed into the input port of the four time-varying modulation signal circuits and The non-reciprocal phase difference can be controlled The numerical value of .

[0085] A non-reciprocal phase shifter with a central operating frequency of 2GHz is designed according to the control method of non-reciprocal phase shift. The dielectric substrate used in the non-reciprocal phase shifter sample is Rogers 5880 material, with a dielectric constant of 2.2 and a thickness of 0.8 mm. The processing technology is the traditional PCB printed circuit technology, and the thickness of the top and bottom copper foils is 35 microns. The width of the 50-ohm microstrip line is 2.3mm, the width of the 40-ohm microstrip line is 3.2mm, and the width of the 80-ohm microstrip line is 1.0mm. l1=14mm, l2=41mm, l3=41mm, l4=14mm, l5=14mm, l6=27.5mm, l7=27.5mm, l8=55mm. The varactor diode in the time-varying modulation circuit uses Skyworks SMV1231, with an inductance value of 20nH and a capacitance value of 8pF. The frequency f of the low-frequency modulation signal m =220MHz, fed DC bias voltage V DC =6.9V, let Set the initial phase of the low frequency modulation signal Then control The initial phase values ​​of the four time-varying modulation signals can be adjusted.

[0086] Figure 2 is the return loss curve of the RF port of the non-reciprocal phase shifter. Figure 2 It can be seen that the phase shifter works at 2GHz and has good matching in the 1960MHz-2060MHz frequency band, with a return loss value lower than -10dB. At the same time, the out-of-band frequency shows a steep change characteristic, indicating good suppression ability for out-of-band frequency signal transmission. Figure 3 This is the phase shift curve of the non-reciprocal phase shifter. It can be seen that the phase shift difference of the output signal between RF port 1 and RF port 2 is basically stable within the working frequency band, and the initial phase of the modulated signal is changed. Parameters can control the value of the phase shift of the non-reciprocal phase shifter, and satisfy the non-reciprocal phase shift difference equal to (because ).

[0087] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0088] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and core ideas of this application. At the same time, for those skilled in the art, according to the ideas of this application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A non-reciprocal phase shifter, characterized in that: The non-reciprocal phase shifter is printed on the upper surface of the dielectric substrate, and the non-reciprocal phase shifter includes: a first radio frequency filter structure, a second radio frequency filter structure and a time-varying modulation resonant ring; The first radio frequency filter structure and the second radio frequency filter structure are both connected to the time-varying modulation resonant ring; the first radio frequency filter structure and the second radio frequency filter structure are both short-circuited to the metal on the lower surface of the dielectric substrate.

2. The non-reciprocal phase shifter according to claim 1, characterized in that: The time-varying modulation resonant ring comprises: a double-loop microstrip line structure and a plurality of time-varying modulation signal circuits; A plurality of the time-varying modulation signal circuits are all connected to the dual-loop microstrip line structure.

3. The non-reciprocal phase shifter according to claim 2, characterized in that: The double-loop microstrip line structure includes a first horizontal microstrip line, a second horizontal microstrip line, a third horizontal microstrip line, a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line and a fourth vertical microstrip line; The first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are arranged in parallel at equal intervals; The first end of the first horizontal microstrip line and the first end of the second horizontal microstrip line are connected through the first vertical microstrip line; The second end of the first horizontal microstrip line and the second end of the second horizontal microstrip line are connected through the second vertical microstrip line; The first end of the second horizontal microstrip line and the first end of the third horizontal microstrip line are connected through the third vertical microstrip line; The second end of the second horizontal microstrip line and the second end of the third horizontal microstrip line are connected via the fourth vertical microstrip line; The first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are respectively connected to a corresponding time-varying modulation signal circuit.

4. The non-reciprocal phase shifter according to claim 3, characterized in that: The lengths of the first horizontal microstrip line, the second horizontal microstrip line and the third horizontal microstrip line are all equal; the lengths of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all equal.

5. The non-reciprocal phase shifter according to claim 3, characterized in that: The structures of the multiple time-varying modulation signal circuits are the same; The time-varying modulation signal circuit comprises: a varactor diode, a capacitor and an inductor; The positive electrode of the varactor diode is grounded; The cathode of the varactor diode, one end of the capacitor and one end of the inductor are connected; The other end of the inductor serves as an input port of the time-varying modulation signal circuit; The other end of the capacitor serves as an output port of the time-varying modulation signal circuit and is connected to the corresponding vertical microstrip line in the double-loop microstrip line structure; the corresponding vertical microstrip line in the double-loop microstrip line structure includes: the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line.

6. The non-reciprocal phase shifter according to claim 3, characterized in that: The first radio frequency filtering structure includes a fourth horizontal microstrip line and a first radio frequency signal input / output port; A first metallized through hole is disposed at a first end point of the fourth horizontal microstrip line; The second metallized through hole is arranged at the second end point of the fourth horizontal microstrip line; A third metallized through hole is disposed between the first metallized through hole and the second metallized through hole; The first metallized through hole, the second metallized through hole and the third metallized through hole all penetrate the dielectric substrate and the fourth horizontal microstrip line; The fourth horizontal microstrip line is connected to the first RF signal input / output port through a fifth vertical microstrip line; the intersection of the fifth vertical microstrip line and the fourth horizontal microstrip line is between the first metallized through hole and the third metallized through hole; The fourth horizontal microstrip line is connected to the first horizontal microstrip line through a sixth vertical microstrip line; and an intersection of the sixth vertical microstrip line and the fourth horizontal microstrip line is between the second metallized through hole and the third metallized through hole.

7. The non-reciprocal phase shifter according to claim 6, characterized in that: The second radio frequency filtering structure includes a fifth horizontal microstrip line and a second radio frequency signal input / output port; A fourth metallized through hole is disposed at a first end point of the fifth horizontal microstrip line; A fifth metallized through hole is disposed at the second end point of the fifth horizontal microstrip line; A sixth metallized through hole is disposed between the fourth metallized through hole and the fifth metallized through hole; The fourth metallized through hole, the fifth metallized through hole and the sixth metallized through hole all penetrate the dielectric substrate and the fifth horizontal microstrip line; The fifth horizontal microstrip line is connected to the second RF signal input / output port through a seventh vertical microstrip line; the intersection of the seventh vertical microstrip line and the fifth horizontal microstrip line is between the fourth metallized through hole and the sixth metallized through hole; The fifth horizontal microstrip line is connected to the third horizontal microstrip line through an eighth vertical microstrip line; and an intersection of the eighth vertical microstrip line and the fifth horizontal microstrip line is between the fifth metallized through hole and the sixth metallized through hole.

8. The non-reciprocal phase shifter according to claim 7, characterized in that: The characteristic impedances of the first horizontal microstrip line, the second horizontal microstrip line, the third horizontal microstrip line, the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line and the fourth vertical microstrip line are all 80 ohms; The characteristic impedances of the fourth horizontal microstrip line and the fifth horizontal microstrip line are both 50 ohms; The characteristic impedances of the fifth vertical microstrip line, the sixth vertical microstrip line, the seventh vertical microstrip line, and the eighth vertical microstrip line are all 40 ohms.

9. The non-reciprocal phase shifter according to claim 7, characterized in that: The sum of the first distance and the second distance is half of the wavelength of the medium; the first distance is the distance from the first metallized through hole to the first intersection; the first intersection is the intersection of the fourth horizontal microstrip line and the fifth vertical microstrip line; The second distance is the distance from the third metallized through hole to the first intersection; The first distance is one quarter of the second distance; The sum of the third distance and the fourth distance is half of the wavelength of the medium; the third distance is the distance from the third metallized through hole to the second intersection; the second intersection is the intersection of the fourth horizontal microstrip line and the sixth vertical microstrip line; The fourth distance is the distance from the second metallized through hole to the second intersection; The fourth distance is one quarter of the third distance; The fifth distance is randomly set according to the size of the dielectric substrate; the fifth distance is the length of the sixth vertical microstrip line; The sixth distance is one quarter of the wavelength of the medium; the sixth distance is the distance from the first end of the first horizontal microstrip line to the third intersection; the third intersection is the intersection of the sixth vertical microstrip line and the first horizontal microstrip line; The seventh distance is one quarter of the wavelength of the medium; the seventh distance is the length of the first vertical microstrip line, the second vertical microstrip line, the third vertical microstrip line or the fourth vertical microstrip line; The eighth distance is half of the wavelength of the medium; the eighth distance is the length of the first horizontal microstrip line, the second horizontal microstrip line or the third horizontal microstrip line.

10. The non-reciprocal phase shifter according to claim 3, characterized in that: The frequencies of the modulation signals input into the plurality of time-varying modulation signal circuits are the same; The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the first vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the second vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the third vertical microstrip line is The initial phase of the modulation signal of the time-varying modulation signal circuit connected to the fourth vertical microstrip line is

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