Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device and a preparation method thereof, and a display device, the photoelectric device comprises a first electrode and a second electrode which are oppositely arranged, a hole transport layer arranged between the first electrode and the second electrode, and an interface layer, the interface layer is arranged between the first electrode and the hole transport layer, and the interface layer comprises two-dimensional molybdenum trioxide. The photoelectric device comprises the interface layer, and the interface layer has relatively high adhesion strength, so that the interface contact quality between the hole transport layer and the adjacent layer can be optimized, holes formed by direct contact of metal oxide particles and the adjacent layer can be reduced, leakage current can be reduced, effective hole injection can be enhanced, and the efficiency of the photoelectric device can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic optoelectronic devices (OLED) and quantum dot optoelectronic devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high photoluminescence and electroluminescence quantum yield. In recent years, it has become a strong competitor to OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] The efficiency of existing optoelectronic devices is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low efficiency of existing photoelectric devices.

[0006] An embodiment of the present application is implemented as follows: a photoelectric device includes a first electrode and a second electrode arranged opposite to each other, and a hole transport layer arranged between the first electrode and the second electrode. The photoelectric device also includes an interface layer, which is arranged between the first electrode and the hole transport layer, and the interface layer includes two-dimensional molybdenum trioxide.

[0007] Optionally, in some embodiments of the present application, the material of the hole transport layer includes metal oxide particles, and the metal oxide particles include one or more of doped metal oxide particles and undoped metal oxide particles, and the material of the undoped metal oxide particles includes NiO x , MoO3, V2O5, CrO3, CuO or more, the doped metal oxide particles include metal oxide and doping elements, the metal oxide includes NiO x, MoO3, V2O5, CrO3, CuO, and the doping elements include one or more of Ga, Li, Mg, Mn, F, Cl, Br, I, Al, and K.

[0008] Optionally, in some embodiments of the present application, the average particle size of the metal oxide particles is 4 to 10 nm; and / or

[0009] In the doped metal oxide particles, the mass fraction of the doping element is 1 to 20%; and / or

[0010] The sheet diameter of the two-dimensional molybdenum trioxide is 50 to 300 nm; and / or

[0011] The average sheet diameter of the two-dimensional molybdenum trioxide is 80 nm; and / or

[0012] The thickness of the two-dimensional molybdenum trioxide sheet structure is 3 to 10 nm; and / or

[0013] The average thickness of the two-dimensional molybdenum trioxide sheet structure is 6 nm; and / or

[0014] The thickness of the interface layer is 3-10 nm.

[0015] Optionally, in some embodiments of the present application, the optoelectronic device further includes a light-emitting layer, and the light-emitting layer is disposed between the first electrode and the interface layer, or the light-emitting layer is disposed between the second electrode and the hole transport layer.

[0016] Optionally, in some embodiments of the present application, the interface layer is composed of the two-dimensional molybdenum trioxide.

[0017] Optionally, in some embodiments of the present application, the first electrode and the second electrode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode, and the material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide; the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, Z nO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes one or more of Au:Mg alloy electrode and Ag:Mg alloy electrode; and / or

[0018] The material of the light-emitting layer is an organic light-emitting material or a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2 + Sn 2+ , Cu2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - , I-one or more; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl-, Br - ,I - One or more of; and / or

[0019] The photoelectric device further comprises a hole injection layer, which is arranged between the first electrode and the interface layer or between the second electrode and the hole transport layer, and the material of the hole injection layer comprises one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; and / or

[0020] The photoelectric device also includes an electron transport layer, which is arranged between the first electrode and the light-emitting layer, or between the second electrode and the light-emitting layer. The material of the electron transport layer includes one or more of an inorganic electron transport material and an organic electron transport material. The inorganic electron transport material includes one or more of a metal oxide, a doped metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide includes ZnO, TiO2, SnO2, Z The invention relates to one or more of rO2, Ta2O5, and Al2O3, the dopant in the doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn; the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor material includes one or more of InP and GaP; the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0021] Accordingly, the present invention also provides a method for preparing a photoelectric device, comprising the following steps:

[0022] Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a first electrode;

[0023] Providing two-dimensional molybdenum trioxide, and disposing the two-dimensional molybdenum trioxide on the optoelectronic device preform to form an interface layer;

[0024] Preparing a hole transport layer on the interface layer, wherein the hole transport layer includes metal oxide particles;

[0025] A second electrode is formed on the hole transport layer to obtain a photoelectric device.

[0026] Optionally, in some embodiments of the present application, the first electrode is an anode, the second electrode is a cathode, and forming the second electrode on the hole transport layer includes: sequentially forming a stacked light-emitting layer and a second electrode on the hole transport layer; or

[0027] The first electrode is a cathode, the second electrode is an anode, and the photoelectric device preform further comprises a light-emitting layer disposed on the first electrode; or

[0028] The first electrode is an anode, the second electrode is a cathode, and the photoelectric device preform further comprises a hole injection layer disposed on the first electrode; or

[0029] The first electrode is a cathode, the second electrode is an anode, and the photoelectric device preform further comprises an electron transport layer and a light-emitting layer stacked on the first electrode; or

[0030] The first electrode is an anode, the second electrode is a cathode, and the forming of the second electrode on the hole transport layer comprises: sequentially forming a stacked light-emitting layer, an electron transport layer, and a second electrode on the hole transport layer; or

[0031] The first electrode is a cathode, the second electrode is an anode, the photoelectric device preform also includes a light-emitting layer arranged on the first electrode, and the sequentially forming the second electrode on the hole transport layer includes: forming a stacked hole injection layer and a second electrode on the hole transport layer.

[0032] Optionally, in some embodiments of the present application, the two-dimensional molybdenum trioxide is disposed on the optoelectronic device preform to form an interface layer, comprising: dissolving the two-dimensional molybdenum trioxide in a first solvent to obtain a two-dimensional molybdenum trioxide dispersion, disposing the two-dimensional molybdenum trioxide dispersion on the optoelectronic device preform by a solution method to form a two-dimensional molybdenum trioxide liquid film, and annealing the two-dimensional molybdenum trioxide liquid film to obtain an interface layer.

[0033] Optionally, in some embodiments of the present application, the first solvent includes one or more of ethanol, methanol, butanol, and N,N-dimethylformamide; and / or

[0034] The concentration of the two-dimensional molybdenum trioxide dispersion is 3-8 mg / mL; and / or

[0035] The temperature for annealing the two-dimensional molybdenum trioxide liquid film is 60-120° C., and the time is 5-15 minutes.

[0036] Optionally, in some embodiments of the present application, the method for preparing the two-dimensional molybdenum trioxide includes:

[0037] Providing a molybdenum salt and a second solvent, mixing them, and obtaining a molybdenum salt solution;

[0038] Providing a peroxide solution, and mixing the peroxide solution with the molybdenum salt solution to obtain a molybdenum trioxide particle dispersion;

[0039] An intercalation agent is added to the molybdenum trioxide particle dispersion, and ultrasonic exfoliation is performed to obtain two-dimensional molybdenum trioxide.

[0040] Optionally, in some embodiments of the present application, the molybdenum salt includes one or more of an inorganic molybdenum salt and an organic molybdenum salt, the inorganic molybdenum salt includes one or more of ammonium molybdate, 2-ethylhexanoic acid molybdenum salt, sodium molybdate, potassium molybdate and hydrates thereof, and the organic molybdenum salt includes molybdenum acetylacetonate; and / or

[0041] The second solvent includes one or more of methanol, ethanol, butanol, and N,N-dimethylformamide; and / or

[0042] The peroxide in the peroxide solution comprises one or more of H2O2, Na2O2 and K2O2; and / or

[0043] The intercalant comprises one or more of n-butyl lithium, tert-butyl lithium and N-methyl pyrrolidone; and / or

[0044] The molar ratio of Mo in the molybdenum salt to the peroxide in the peroxide solution is 1:(0.2-1); and / or

[0045] In the molybdenum salt solution, the concentration of the molybdenum salt is 0.01 to 0.1 M; and / or

[0046] The mass concentration of the peroxide solution is 10-50%; and / or

[0047] The molar ratio of Mo in the molybdenum trioxide particles to the intercalation agent is 1:(0.1-1); and / or

[0048] The power of the ultrasonic treatment is 200-800W; and / or

[0049] The ultrasonic treatment time is 6 to 10 hours.

[0050] Optionally, in some embodiments of the present application, the method for preparing a hole transport layer on the interface layer includes: providing a metal oxide particle dispersion, disposing the metal oxide particle dispersion on the interface layer to obtain a first liquid film, and annealing the first liquid film to obtain a hole transport layer; or

[0051] The method for preparing a hole transport layer on the interface layer includes: providing a precursor solution of metal oxide particles, setting the precursor solution of the metal oxide particles on the interface layer to obtain a second liquid film, annealing the second liquid film to react the precursor of the metal oxide particles to form metal oxide particles, and obtaining a hole transport layer.

[0052] Optionally, in some embodiments of the present application, the precursor solution of the metal oxide particles includes a metal hydroxide solution, and the metal hydroxide in the metal hydroxide solution includes one or more of Ni(OH)2, Mo(OH)6, V(OH)5, Cr(OH)6, Cu(OH)2; and / or

[0053] The temperature for annealing the first liquid film is 100 to 250° C. and the time is 15 to 120 min; and / or

[0054] The temperature for annealing the second liquid film is 100 to 250° C., and the time is 15 to 120 minutes.

[0055] Correspondingly, an embodiment of the present application also provides a display device, comprising the optoelectronic device described above.

[0056] The optoelectronic device described in the present application includes the interface layer, and the interface layer has a strong adhesion strength. Thus, the hole transport layer is arranged on the interface layer, which can optimize the interface contact quality between the hole transport layer and the adjacent layer, thereby effectively improving the interface contact effect between the hole transport layer and the adjacent layer, reducing the holes formed by the direct contact between the metal oxide particles and the adjacent layer, reducing the leakage current, and enhancing the effective hole injection, thereby improving the efficiency of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0058] Figure 1 is a schematic structural diagram of a photoelectric device provided in an embodiment of the present application;

[0059] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0060] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0061] Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0062] Figure 5 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0063] Figure 6is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0064] Figure 7 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0065] Figure 8 It is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application.

[0066] Reference numerals:

[0067] Optoelectronic device 100 ; first electrode 10 ; hole transport layer 20 ; interface layer 30 ; second electrode 40 ; light emitting layer 50 ; hole injection layer 60 ; electron transport layer 70 . DETAILED DESCRIPTION

[0068] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0069] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0070] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0071] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0072] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0073] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0074] The hole transport layer of traditional optoelectronic devices uses organic hole transport materials (hole mobility greater than or equal to 1×10 -6 cm 2 / (v·s) of organic materials). However, organic hole transport materials are generally hygroscopic and easily corroded by water vapor in the air, which will have an adverse effect on the stability of the device. Compared with organic hole transport materials, inorganic hole transport materials have more superior stability, higher hole mobility, low cost, and can be solution processed. Among them, metal oxide particles are widely used in due to their wide band gap, high light transmittance, and excellent chemical stability. However, the physical and chemical properties of metal oxide particles will have certain differences due to different synthesis methods, which affects the performance of the device. In recent years, various methods for preparing metal oxide particles have been reported, such as solution sol method, reactive magnetron sputtering method, pulsed laser deposition method, electrochemical deposition method and room temperature solution method. Among them, the metal oxide particles prepared by the room temperature solution method have the advantages of not requiring additional heating annealing and being able to prepare flexible devices, and are widely used. However, the metal oxide particles prepared based on the room temperature solution method have poor crystallinity, poor substrate wettability, and difficulty in thin film spreading, resulting in poor film quality and poor interface contact, which leads to problems such as low hole mobility and severe interfacial charge recombination in the prepared hole transport layer, which in turn leads to low efficiency of optoelectronic devices.

[0075] The technical solution of this application is as follows:

[0076] First, see Figure 1 The embodiment of the present application provides a photoelectric device 100, comprising a first electrode 10, a hole transport layer 20, and a second electrode 40 stacked in sequence. The photoelectric device 100 further comprises an interface layer 30, which is disposed between the first electrode 10 and the hole transport layer 20. The material of the interface layer 30 comprises two-dimensional molybdenum trioxide.

[0077] In some embodiments, the material of the hole transport layer 20 includes metal oxide particles.

[0078] The optoelectronic device 100 described in the present application includes the interface layer 30, and the interface layer 30 has a strong adhesion strength. In this way, the hole transport layer 20 is arranged on the interface layer 30, which can optimize the interface contact quality between the hole transport layer 20 and the adjacent layer, thereby effectively improving the interface contact effect between the hole transport layer 20 and the adjacent layer, reducing the holes formed by the direct contact between the metal oxide particles and the adjacent layer, reducing the leakage current, and enhancing the effective hole injection, thereby improving the luminous efficiency of the optoelectronic device 100 and improving the yield of the optoelectronic device 100.

[0079] In addition, the optoelectronic device 100 includes the interface layer. Thus, when the hole transport layer 20 is prepared on the interface layer 30, the interface layer 30 can serve as a film-forming substrate for the hole transport layer 20, and serve as a confined template when the metal oxide particles or the precursor solution of the metal oxide particles are annealed to form a film, which can effectively improve the crystallinity of the metal oxide particles, facilitate the formation of a dense hole transport layer 20, and reduce the defect states inside and on the surface of the hole transport layer 20, further reduce the holes formed by the direct contact between the metal oxide particles in the hole transport layer 20 and the adjacent layers, reduce the leakage current, thereby effectively improving the hole transport efficiency, and further improving the luminescence efficiency of the optoelectronic device 100.

[0080] See also Figures 2-3 The photoelectric device 100 further includes a light-emitting layer 50, and the light-emitting layer 50 is disposed between the first electrode 10 and the interface layer 30 (see Figure 2 ), or, the light emitting layer 50 is disposed between the second electrode 40 and the hole transport layer 20 (see Figure 3 ). It can be understood that, at this time, the optoelectronic device 100 can be a light-emitting device, such as a quantum dot light-emitting device or an organic light-emitting device.

[0081] It is understood that the metal oxide particles are metal oxide particles with hole transport properties known to be used in hole transport layers. The metal oxide particles include one or more of doped metal oxide particles and undoped metal oxide particles. The material of the undoped metal oxide particles includes NiO x , MoO3, V2O5, CrO3, CuO or more. The doped metal oxide particles include metal oxide and doping elements, and the metal oxide includes NiO x , MoO3, V2O5, CrO3, CuO, and the doping elements include one or more of Ga, Li, Mg, Mn, F, Cl, Br, I, Al, and K.

[0082] In some embodiments, the mass fraction of the doping element in the doped metal oxide particles is 1-20%, for example, 1-10%, 5-15%, 8-18%, 10-20%, etc. Within the doping amount range, the stability and hole transport performance of the hole transport layer 20 can be effectively improved.

[0083] In some embodiments, the average particle size of the metal oxide particles is 4-10 nm, such as 5-7 nm, 6-8 nm, 6.5-9 nm, etc. The metal oxide particles with the average particle size have better crystallization performance, better film forming property and better hole transport performance.

[0084] In some embodiments, the interface layer 30 is composed of the two-dimensional molybdenum trioxide.

[0085] It can be understood that the two-dimensional molybdenum trioxide has a flaky structure. In some embodiments, the sheet diameter of the two-dimensional molybdenum trioxide is 50 to 300 nm, for example, 80 to 200 nm, 100 to 220 nm, 120 to 230 nm, 140 to 240 nm, 160 to 260 nm, 180 to 280 nm, etc. Within the sheet diameter range, on the one hand, the two-dimensional molybdenum trioxide can have better film-forming properties; on the other hand, when the hole transport layer 20 is prepared on the interface layer 30 including the two-dimensional molybdenum trioxide, it is beneficial to make the hole transport layer 20 have better compactness and crystallinity.

[0086] In some embodiments, the thickness of the two-dimensional molybdenum trioxide sheet structure is 3-10 nm, such as 4-9.5 nm, 5-7 nm, 6-8 nm, 6.5-9 nm, etc. The thickness within the above range is conducive to preparing a thinner interface layer 30 .

[0087] In at least one embodiment, the average sheet diameter of the two-dimensional molybdenum trioxide is 80 nm.

[0088] In at least one embodiment, the average thickness of the two-dimensional molybdenum trioxide sheet structure is 6 nm.

[0089] In some embodiments, the thickness of the interface layer 30 is 3-10 nm, for example, 4-7 nm, 5-8 nm, 6-9 nm, etc. Within the thickness range, the crystallinity and film-forming properties of the hole transport layer 20 can be effectively improved, and the optoelectronic device 100 as a whole can have lower resistance and better conductivity.

[0090] See also Figures 4-5 In some embodiments, the photoelectric device 100 further includes a hole injection layer 60, and the hole injection layer 60 is disposed between the first electrode 10 and the interface layer 30 (see Figure 5 ) or between the second electrode 40 and the hole transport layer 20 (see Figure 4 ).

[0091] See also Figures 6-7 In some embodiments, the optoelectronic device 100 further includes an electron transport layer 70, wherein the electron transport layer 70 is disposed between the first electrode 10 and the light emitting layer 50 (see Figure 6 ), or between the second electrode 40 and the light-emitting layer 50 (see Figure 7 ).

[0092] The first electrode 10 and the second electrode 40 are anodes and cathodes for optoelectronic devices known in the art, for example, they can be independently and independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single-substance electrodes or alloy electrodes. The material of the doped metal oxide electrode can be but is not limited to one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, an Ag layer and an AZO layer. The material of the metal single substance electrode may include but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode includes, but is not limited to, one or more of an Au:Mg alloy electrode and an Ag:Mg alloy electrode.

[0093] In some embodiments, the anode is an electrode with a relatively high work function, for example, it may include but is not limited to a doped metal oxide electrode with a relatively high work function, a metal single substance electrode with a relatively high work function, and a carbon nanotube electrode. The metal single substance electrode with a relatively high work function may be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0094] In some embodiments, the cathode is an electrode with a relatively low work function, for example, it may include but is not limited to a metal single substance electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal single substance electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function may be Au:Mg and Ag:Mg, etc.

[0095] The material of the light-emitting layer 50 may be an organic light-emitting material or a quantum dot light-emitting material.

[0096] The organic light-emitting material may include, but is not limited to, one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0097] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0098] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0099] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0100] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl-, Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0101] The material of the hole injection layer 60 can also be a material known in the art for hole injection layer, for example, it can be selected from but not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide. One or more.

[0102] The material of the electron transport layer 70 is a material known in the art for electron transport layers, for example, it can be selected from but not limited to one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport material includes but is not limited to one or more of metal oxides, doped metal oxides, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. Specifically, the metal oxide is selected from but not limited to one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the doped metal oxide is selected from but not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the dopant in the doped metal oxide is selected from but not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. For example, the doped metal oxide may be aluminum zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), and tin-doped zinc oxide, etc.; the IIB-VIA semiconductor material is selected from but not limited to one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor material is selected from but not limited to one or more of InP and GaP; the IB-IIIA-VIA semiconductor material is selected from but not limited to one or more of CuInS and CuGaS. The organic electron transport material includes, but is not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0103] In some embodiments, the thickness of the first electrode 10 is 20-100 nm.

[0104] In some embodiments, the thickness of the hole transport layer 20 is 20-60 nm.

[0105] In some embodiments, the thickness of the second electrode 40 is 40-80 nm.

[0106] In some embodiments, the thickness of the light emitting layer 50 is 20-60 nm.

[0107] In some embodiments, the hole injection layer 60 has a thickness of 10-100 nm.

[0108] In some embodiments, the thickness of the electron transport layer 70 is 20-60 nm.

[0109] It is understandable that the optoelectronic device 100 may also be further provided with some functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, and the like.

[0110] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0111] In some embodiments, the optoelectronic device 100 further includes a substrate, and the substrate is disposed on a side of the first electrode 10 away from the light-emitting layer 50 , or the substrate is disposed on a side of the second electrode 40 away from the light-emitting layer 50 .

[0112] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0113] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device or an organic optoelectronic device.

[0114] Second, see Figure 1 and Figure 8 The present application also provides a method for preparing a photoelectric device, comprising the following steps:

[0115] Step S11, providing a photoelectric device preform, wherein the photoelectric device preform includes a first electrode 10;

[0116] Step S12, providing two-dimensional molybdenum trioxide, and disposing the two-dimensional molybdenum trioxide on the optoelectronic device preform to form an interface layer 30;

[0117] Step S13, preparing a hole transport layer 20 on the interface layer 30;

[0118] Step S14 , forming a second electrode 40 on the hole transport layer 20 to obtain a photoelectric device 100 .

[0119] Please read further Figure 2 In some embodiments, the first electrode 10 is a cathode, the second electrode 40 is an anode, and the photoelectric device preform further includes a light-emitting layer 50 disposed on the first electrode 10. At this time, in step S12, the two-dimensional molybdenum trioxide is disposed on the light-emitting layer 50.

[0120] Please read further Figure 3 In some embodiments, the first electrode 10 is an anode, the second electrode 40 is a cathode, and the step S14 is: sequentially forming a stacked light-emitting layer 50 and a second electrode 40 on the hole transport layer 20 to obtain a photoelectric device 100.

[0121] Please read further Figure 4 In some embodiments, the first electrode 10 is a cathode, the second electrode 40 is an anode, the photoelectric device preform further includes a light-emitting layer 50 disposed on the first electrode, in the step S12, the two-dimensional molybdenum trioxide is disposed on the light-emitting layer 50, and the step S14 is: a stacked hole injection layer 60 and a second electrode 40 are sequentially formed on the hole transport layer 20 to obtain a photoelectric device 100.

[0122] Please read further Figure 5 In some embodiments, the first electrode 10 is an anode, the second electrode 40 is a cathode, and the photoelectric device preform further includes a hole injection layer 60 disposed on the first electrode 10. At this time, in step S12, the two-dimensional molybdenum trioxide is disposed on the hole injection layer 60.

[0123] Please read further Figure 6 In some embodiments, the first electrode 10 is a cathode, the second electrode 40 is an anode, and the photoelectric device preform further includes an electron transport layer 70 and a light-emitting layer 50 sequentially stacked on the first electrode 10. At this time, in step S12, the two-dimensional molybdenum trioxide is disposed on the light-emitting layer 50.

[0124] Please read further Figure 7 In some embodiments, the first electrode 10 is an anode, the second electrode 40 is a cathode, and the step S14 is: sequentially forming a stacked light-emitting layer 50, an electron transport layer 70 and a second electrode 40 on the hole transport layer 20 to obtain a photoelectric device 100.

[0125] In the step S12:

[0126] The two-dimensional molybdenum trioxide is described above and will not be repeated here.

[0127] The method of setting the two-dimensional molybdenum trioxide on the optoelectronic device preform can be a chemical method or a physical method. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, scraping, printing, dip pulling, immersion, spraying, rolling, casting, slit coating, and strip coating.

[0128] In at least one embodiment, the method for setting the two-dimensional molybdenum trioxide on the optoelectronic device preform is a solution method, and the step S12 includes: dissolving the two-dimensional molybdenum trioxide in a first solvent to obtain a two-dimensional molybdenum trioxide dispersion, setting the two-dimensional molybdenum trioxide dispersion on the optoelectronic device preform by a solution method to form a two-dimensional molybdenum trioxide liquid film, and annealing the two-dimensional molybdenum trioxide liquid film to obtain an interface layer 30.

[0129] The first solvent includes, but is not limited to, one or more of ethanol, methanol, butanol, and N,N-dimethylformamide (DMF).

[0130] In some embodiments, the concentration of the two-dimensional molybdenum trioxide dispersion is 3-8 mg / mL, for example, 4-6 mg / mL, 5-7 mg / mL, etc. Within the concentration range, it is beneficial to prepare an interface layer 30 with good film-forming properties.

[0131] In some embodiments, the method of disposing the two-dimensional molybdenum trioxide dispersion on the optoelectronic device preform by a solution method is a spin coating method, and the spin coating speed of the spin coating method is 4×10 3 ~8ⅹ10 3 rpm / min, and the time is 10-100s. The rotation speed and time range are conducive to preparing the interface layer 30 with good film properties.

[0132] In some embodiments, the annealing temperature of the two-dimensional molybdenum trioxide liquid film is 60-120°C, for example, 70-100°C, 80-110°C, 90-120°C, etc., and the annealing time is 5-15min, for example, 5-10min, 6-12min, 8-14min, 9-15min, etc. Within the temperature and time range, it is beneficial to prepare an interface layer 30 with better crystallinity.

[0133] The two-dimensional molybdenum trioxide can be prepared by methods known in the art. In at least one embodiment, the two-dimensional molybdenum trioxide is prepared by the following method:

[0134] Step S21, providing a molybdenum salt and a second solvent, mixing them to obtain a molybdenum salt solution;

[0135] Step S22, providing a peroxide solution, and mixing the peroxide solution with the molybdenum salt solution to obtain a molybdenum trioxide particle dispersion;

[0136] Step S23, adding an intercalating agent to the molybdenum trioxide particle dispersion, and ultrasonically exfoliating to obtain two-dimensional molybdenum trioxide.

[0137] The molybdenum salt includes but is not limited to one or more of an inorganic molybdenum salt and an organic molybdenum salt. The inorganic molybdenum salt includes but is not limited to one or more of ammonium molybdate, 2-ethylhexanoic acid molybdenum salt, sodium molybdate, potassium molybdate and hydrates thereof. The organic molybdenum salt includes but is not limited to molybdenum acetylacetonate.

[0138] The second solvent includes, but is not limited to, one or more of methanol, ethanol, butanol, and DMF.

[0139] The peroxide in the peroxide solution includes, but is not limited to, one or more of H2O2, Na2O2 and K2O2. It is understood that the solvent in the peroxide solution may be water.

[0140] The intercalation agent includes, but is not limited to, one or more of n-butyl lithium, tert-butyl lithium and N-methyl pyrrolidone.

[0141] The molar ratio of Mo in the molybdenum salt to the peroxide in the peroxide solution is 1:(0.2-1), for example, 1:(0.2-0.6), 1:(0.3-0.7), 1:(0.4-0.8), 1:(0.5-0.9), 1:(0.55-1), etc. Within the ratio range, molybdenum trioxide particles with better performance and better crystallinity can be effectively prepared.

[0142] In the molybdenum salt solution, the concentration of the molybdenum salt is 0.01-0.1 M, for example, 0.02-0.06 M, 0.04-0.08 M, etc. Within the concentration range, it is beneficial to prepare molybdenum trioxide particles with better performance and better crystallinity.

[0143] The mass concentration of the peroxide solution is 10-50%, for example, 10-25%, 15-30%, 20-40%, etc. In at least some embodiments, the mass concentration of the peroxide solution is 30%.

[0144] The molar ratio of Mo in the molybdenum trioxide particles to the intercalation agent is 1:(0.1-1), for example, 1:(0.2-0.6), 1:(0.3-0.7), 1:(0.4-0.8), 1:(0.5-0.9), 1:(0.55-1), etc. Within the ratio range, the molybdenum trioxide particles can be effectively and fully exfoliated.

[0145] The power of the ultrasonic treatment is 200-800W, for example, 300-600W, 400-700W, 500-800W, etc., and the time of the ultrasonic treatment is 6-10h, for example, 6-8h, 7-9h, 8-10h, etc. Within the power and time range of the ultrasound, the exfoliation effect on the trioxide particles is better, which is conducive to the preparation of two-dimensional molybdenum trioxide with suitable sheet diameter and thickness and excellent performance.

[0146] In step S13:

[0147] In some embodiments, the method for preparing the hole transport layer 20 on the interface layer 30 includes: providing a metal oxide particle dispersion, disposing the metal oxide particle dispersion on the interface layer 30 to obtain a first liquid film, and annealing the first liquid film to obtain the hole transport layer 20. By using this method to prepare the hole transport layer 20 on the interface layer 30, the interface contact quality between the hole transport layer 20 and the optoelectronic device preform can be optimized, the interface contact effect can be effectively improved, the holes in the contact interface can be reduced, and the leakage current can be reduced.

[0148] In other embodiments, the method for preparing the hole transport layer 20 on the interface layer 30 includes: providing a precursor solution of metal oxide particles, setting the precursor solution of the metal oxide particles on the interface layer 30 to obtain a second liquid film, annealing the second liquid film, so that the precursor of the metal oxide particles reacts to form metal oxide particles, and obtains the hole transport layer 20. The hole transport layer 20 is prepared on the interface layer 30 by this method. On the one hand, the interface contact quality between the hole transport layer 20 and the optoelectronic device preform can be optimized, the interface contact effect can be effectively improved, the holes in the contact interface can be reduced, and the leakage current can be reduced; on the other hand, the metal oxide particle precursor crystallizes on the interface layer 30 to form metal oxide particles, and the interface layer 30 can act as a confined template, which is conducive to the preparation of metal oxide particles with good crystallinity, and then the preparation of the hole transport layer 20 with good hole transport performance.

[0149] The metal oxide particles are as described above and will not be described again here.

[0150] The precursor solution of the metal oxide particles may include, but is not limited to, a metal hydroxide solution. The metal hydroxide in the metal hydroxide solution includes, but is not limited to, one or more of Ni(OH)2, Mo(OH)6, V(OH)5, Cr(OH)6, and Cu(OH)2. The solvent in the metal hydroxide solution includes, but is not limited to, one or more of ethylene glycol, glycerol, DMF, and DMSO (dimethyl sulfoxide).

[0151] The method of disposing the metal oxide particle dispersion or the metal oxide particle precursor solution on the interface layer 30 may be the solution method described above.

[0152] In at least one embodiment, the method of disposing the metal oxide particle dispersion or the metal oxide particle precursor solution on the interface layer 30 is a spin coating method, and the spin coating speed of the spin coating method is 2×10 3 ~6ⅹ10 3 rpm / min, and the time is 30 to 90 s. The rotation speed and time range are conducive to preparing a hole transport layer 20 with good film properties.

[0153] In some embodiments, the temperature for annealing the first liquid film may be 100-250° C., for example, 100-200° C., 120-210° C., 140-220° C., 150-230° C., 160-240° C., 180-250° C., etc., and the time may be 15-120 min., for example, 15-70 min., 30-80 min., 50-100 min., 60-120 min., etc. Within the temperature and time range, it is beneficial to prepare a hole transport layer 20 with good crystallinity.

[0154] In some embodiments, the temperature for annealing the second liquid film may be 100-250° C., for example, 100-200° C., 120-210° C., 140-220° C., 150-230° C., 160-240° C., 180-250° C., etc., and the time may be 15-120 min., for example, 15-70 min., 30-80 min., 50-100 min., 60-120 min., etc. Within the temperature and time range, it is beneficial to prepare a hole transport layer 20 with good crystallinity.

[0155] The metal oxide particle precursor solution can be prepared by methods known in the art. Taking Ni(OH)2 solution as an example, in at least one embodiment, the Ni(OH)2 solution is prepared by the following method:

[0156] Step S31, providing a nickel salt and a third solvent, mixing them to obtain a nickel salt solution;

[0157] Step S32, providing an alkali source, and adding the alkali source to the nickel salt solution to obtain a Ni(OH)2 solution;

[0158] The nickel salt includes, but is not limited to, one or more of nickel chloride, nickel nitrate, and nickel acetylacetonate.

[0159] The third solvent includes, but is not limited to, one or more of ethylene glycol, glycerol, DMF, and DMSO (dimethyl sulfoxide).

[0160] The alkali source includes, but is not limited to, one or more of sodium hydroxide, potassium hydroxide, and tetramethylammonium hydroxide.

[0161] The concentration of the nickel salt solution is 0.01-0.1M, for example, 0.02-0.06M, 0.04-0.08M, etc.

[0162] The amount of the alkali source added is: after the alkali source is added to the nickel salt solution, the pH of the system is 9-14.

[0163] In the method for preparing the optoelectronic device, the method for forming the light-emitting layer 50, the hole injection layer 60, the electron transport layer 70, and the second electrode may be the chemical method or the physical method described above.

[0164] The materials of the light emitting layer 50 , the second electrode 40 , the hole injection layer 60 , and the electron transport layer 70 are as described above and will not be described in detail here.

[0165] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0166] The present application also relates to a display device, wherein the display device includes the optoelectronic device 100 .

[0167] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0168] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0169] Example 1

[0170] Providing an ITO anode having a thickness of 100 nm;

[0171] Dissolve 0.25g of ammonium molybdate tetrahydrate in 10mL of ethanol, stir until dissolved, add 2mL of H2O2 solution with a mass concentration of 30%, wherein the molar ratio of Mo to H2O2 in ammonium molybdate tetrahydrate is 1:0.5, continue stirring for 24h, stop stirring, let stand for 1h, centrifuge and wash to obtain molybdenum trioxide particles; take 0.2g of the above molybdenum trioxide particles and disperse them in 50mL of ethanol solution, place them in a constant temperature ultrasonic instrument, add 1mL of n-butyl lithium, wherein the molar ratio of Mo to n-butyl lithium in the molybdenum trioxide particles is 1:0.5, ultrasonicate for 6h, and obtain ultrathin two-dimensional molybdenum trioxide nanomaterials; disperse the ultrathin two-dimensional molybdenum trioxide in ethanol solution to obtain a two-dimensional molybdenum trioxide dispersion with a concentration of 5mg / mL; spin-coat the two-dimensional molybdenum trioxide dispersion on the anode, wherein the spin-coating speed is 4000rpm / min, the time is 30s, and annealing is performed at 60℃ for 10min to obtain an interface layer 30 with a thickness of 3nm;

[0172] Nickel nitrate hexahydrate is ultrasonically dissolved and dispersed in ethylene glycol to form a nickel nitrate solution; sodium hydroxide is dissolved in ethanol to form an alkaline solution; the alkaline solution is added dropwise to the nickel nitrate solution, the pH is adjusted to 12, and stirred for 1 hour to obtain a Ni(OH)2 solution with a concentration of 0.05M; the Ni(OH)2 solution is spin-coated on the interface layer 30, wherein the spin-coating speed is 3000 rpm, the time is 30 seconds, and annealing is performed at 150°C for 60 minutes to crystallize Ni(OH)2 to form NiO x particles, to obtain a hole transport layer 20 with a thickness of 50 nm;

[0173] Depositing CdSe / ZnS quantum dot material on the hole transport layer 20, annealing at 100°C for 30 minutes, to obtain a light-emitting layer 50 with a thickness of 25 nm;

[0174] Spin-coat a ZnO ethanol solution on the light-emitting layer 50 and anneal at 80° C. for 30 min to obtain an electron transport layer 70 with a thickness of 30 nm;

[0175] Al is evaporated on the electron transport layer 70 to obtain a cathode with a thickness of 100 nm;

[0176] After packaging, the optoelectronic device 100 is obtained.

[0177] Example 2

[0178] This embodiment is substantially the same as Embodiment 1, except that this embodiment further comprises: providing a PEDOT:PSS material, spin-coating the PEDOT:PSS material on the anode, and annealing at 100° C. for 20 min to obtain a hole injection layer 60 with a thickness of 55 nm.

[0179] The interface layer 30 of this embodiment is formed on the hole injection layer 60 .

[0180] Example 3

[0181] Providing an Al cathode having a thickness of 70 nm;

[0182] Spin-coat a ZnO ethanol solution on the cathode, and anneal at 80° C. for 30 min to obtain an electron transport layer 70 with a thickness of 40 nm;

[0183] Depositing CdSe / ZnS quantum dot material on the electron transport layer 70, annealing at 100°C for 30 minutes, to obtain a light-emitting layer 50 with a thickness of 25 nm;

[0184] Dissolve 0.25g of ammonium molybdate tetrahydrate in 10mL of ethanol, stir until dissolved, add 2mL of H2O2 solution with a mass concentration of 30%, wherein the molar ratio of Mo to H2O2 in ammonium molybdate tetrahydrate is 1:0.5, continue stirring for 24h, stop stirring, let stand for 1h, centrifuge and wash to obtain molybdenum trioxide particles; take 0.2g of the above molybdenum trioxide particles and disperse them in 50mL of ethanol solution, place them in a constant temperature ultrasonic instrument, add 1mL of n-butyl lithium, wherein the molar ratio of Mo to n-butyl lithium in the molybdenum trioxide particles is 1:0.5, ultrasonicate for 6h, and obtain ultra-thin two-dimensional molybdenum trioxide nanomaterials; disperse the ultra-thin two-dimensional molybdenum trioxide in ethanol solution to obtain a two-dimensional molybdenum trioxide dispersion with a concentration of 5mg / mL; spin-coat the two-dimensional molybdenum trioxide dispersion on the light-emitting layer 50, wherein the spin-coating speed is 4000rpm / min, the time is 30s, and annealing is performed at 120℃ for 15min to obtain an interface layer 30 with a thickness of 6nm;

[0185] Dissolving nickel nitrate hexahydrate in ethylene glycol by ultrasonic dissolution to form a nickel nitrate solution; dissolving sodium hydroxide in ethanol to form an alkaline solution; dropping the alkaline solution into the nickel nitrate solution, adjusting the pH to 12, stirring for 1 hour, and obtaining a Ni(OH)2 solution with a concentration of 0.05M; spin coating the Ni(OH)2 solution on the interface layer 30, wherein the spin coating speed is 3000 rpm, the time is 30 seconds, and annealing at 150°C for 60 minutes to obtain a hole transport layer 20 with a thickness of 40 nm;

[0186] ITO is evaporated on the hole transport layer 20 to obtain an anode with a thickness of 100 nm;

[0187] After packaging, the optoelectronic device 100 is obtained.

[0188] Example 4

[0189] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, molybdenum acetylacetonate is used to replace the ammonium molybdate tetrahydrate in Embodiment 1.

[0190] Example 5

[0191] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, N-methylpyrrolidone is used to replace the n-butyl lithium in Embodiment 1.

[0192] Example 6

[0193] This embodiment is substantially the same as Embodiment 1, except that the molar ratio of Mo to n-butyl lithium in the molybdenum trioxide particles in this embodiment is 1:0.1.

[0194] Example 7

[0195] This embodiment is substantially the same as Embodiment 1, except that the molar ratio of Mo to n-butyl lithium in the molybdenum trioxide particles in this embodiment is 1:1.

[0196] Example 8

[0197] This embodiment is substantially the same as Embodiment 1, except that the molar ratio of Mo to H2O2 in the ammonium molybdate tetrahydrate in this embodiment is 1:0.2.

[0198] Example 9

[0199] This embodiment is substantially the same as Embodiment 1, except that the molar ratio of Mo to H2O2 in ammonium molybdate tetrahydrate in this embodiment is 1:1.

[0200] Example 10

[0201] This embodiment is substantially the same as the embodiment 1, except that the annealing temperature during preparation of the interface layer 30 in this embodiment is 100° C.

[0202] Embodiment 11

[0203] This embodiment is substantially the same as the embodiment 1, except that the annealing temperature during preparation of the interface layer 30 in this embodiment is 120°C.

[0204] Example 12

[0205] This embodiment is substantially the same as Embodiment 1, except that the thickness of the interface layer 30 prepared in this embodiment is 6 nm.

[0206] Example 13

[0207] This embodiment is substantially the same as the embodiment 1, except that the thickness of the interface layer 30 prepared in this embodiment is 10 nm.

[0208] Embodiment 14

[0209] This embodiment is basically the same as Embodiment 1, except that vanadium nitrate is used in this embodiment to replace nickel nitrate hexahydrate in Embodiment 1, and correspondingly, the material of the hole transport layer 20 prepared in this embodiment is V2O5 particles.

[0210] Embodiment 15

[0211] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, the preparation method of the hole transport layer 20 is:

[0212] Provide NiO x Ethanol dispersion of NiO particles x The ethanol dispersion of particles was spin-coated on the interface layer 30 , wherein the spin-coating speed was 3000 rpm, the time was 30 s, and annealing was performed at 150° C. for 60 min, to obtain a hole transport layer 20 with a thickness of 50 nm.

[0213] Comparative Example 1

[0214] This comparative example is substantially the same as Example 1, except that this comparative example does not include the interface layer in Example 1.

[0215] Comparative Example 2

[0216] This comparative example is substantially the same as Example 2, except that this comparative example does not include the interface layer in Example 2.

[0217] Comparative Example 3

[0218] This comparative example is basically the same as Example 3, except that this comparative example does not include the interface layer in Example 3.

[0219] Comparative Example 4

[0220] This comparative example is basically the same as Example 14, except that this comparative example does not include the interface layer in Example 14.

[0221] Comparative Example 5

[0222] This comparative example is basically the same as Example 1, except that this comparative example does not include Example 14 in which the interface layer is prepared using the molybdenum trioxide particles in Example 1. Specifically: the molybdenum trioxide particles are dispersed in an ethanol solution to obtain a molybdenum trioxide particle dispersion with a concentration of 3 mg / mL; the molybdenum trioxide particle dispersion is spin-coated on the anode at a spin-coating speed of 4 Krpm / min for 30 s, and annealed at 60°C for 15 min to obtain an interface layer 30 with a thickness of 10 nm.

[0223] The external quantum efficiency EQE, leakage current, and roughness of the hole transport layer of the optoelectronic devices of Examples 1 to 15 and Comparative Examples 1 to 5 were tested. The test results are shown in Table 1.

[0224] The test method for external quantum efficiency EQE is: using FPD optical property measurement equipment from Foster, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminescence spectrum, and calculating the external quantum efficiency EQE of the device.

[0225] The leakage current test method is as follows: the efficiency test system built by Keithley 2400 and Keithley 6485 measures the corresponding voltage, current and brightness, and the leakage current can be obtained from the brightness-current curve.

[0226] The roughness of the hole transport layer is tested by using an atomic force microscope to measure the surface roughness of the hole transport layer using samples of the products of Examples 1 to 15 and Comparative Examples 1 to 5 in which the hole transport layer 20 is prepared but other functional layers are not prepared on the hole transport layer 20.

[0227] Table 1:

[0228]

[0229]

[0230] From Table 1 we can see that:

[0231] Compared with the optoelectronic devices of comparative examples 1 to 5, the optoelectronic devices of embodiments 1 to 15 have higher external quantum efficiency, lower leakage current, and the hole transport layer 20 has lower roughness. The reason may be that the optoelectronic devices of embodiments 1 to 15 have the interface layer 30 described in the present application, and the hole transport layer 20 is prepared on the interface layer 30, which can effectively improve the crystallinity of the metal oxide particles, which is conducive to forming a dense hole transport layer 20, and reducing the internal and surface defect states of the hole transport layer 20, improving the interface contact effect of the hole transport layer 20, and reducing the leakage current, thereby effectively improving the hole transport efficiency;

[0232] Compared with the optoelectronic device of Example 15, the optoelectronic device of Example 1 has higher external quantum efficiency, lower leakage current, and the hole transport layer 20 has lower roughness. The reason may be that Example 15 directly uses a dispersion of metal oxide particles to prepare the hole transport layer 20 on the interface layer 30, while Example 1 uses a precursor solution of metal oxide particles to crystallize on the interface layer 30 to form metal oxide particles to prepare the hole transport layer 20, which can more effectively improve the crystallinity of the metal oxide particles, which is conducive to forming a dense hole transport layer 20 and reducing the internal and surface defect states of the hole transport layer 20;

[0233] Compared with the optoelectronic device of comparative example 5, the optoelectronic device of embodiment 1 has higher external quantum efficiency, lower leakage current, and the hole transport layer 20 has lower roughness. It can be seen that compared with the interface layer formed by three-dimensional molybdenum trioxide particles, the interface layer formed by two-dimensional molybdenum trioxide can more effectively improve the crystallinity of metal oxide particles, thereby improving the performance of the hole transport layer.

[0234] The optoelectronic device 100 described in the present application includes the interface layer 30, and the interface layer 30 has a strong adhesion strength. In this way, the hole transport layer 20 is arranged on the interface layer 30, which can optimize the interface contact quality between the hole transport layer 20 and the adjacent layer, such as the first electrode 10 or the light-emitting layer 50, thereby effectively improving the interface contact effect between the hole transport layer 20 and the first electrode 10 or the light-emitting layer 50, reducing the holes formed by the direct contact between the metal oxide particles and the first electrode 10 or the light-emitting layer 50, reducing the leakage current, and enhancing the effective hole injection, thereby improving the luminescence efficiency of the optoelectronic device 100 and improving the yield of the optoelectronic device 100.

[0235] In addition, the optoelectronic device 100 includes the interface layer. Thus, when the hole transport layer 20 is prepared on the interface layer 30, the interface layer 30 can serve as a film-forming substrate for the hole transport layer 20, and serve as a confined template when the metal oxide particles or the precursor solution of the metal oxide particles are annealed to form a film, which can effectively improve the crystallinity of the metal oxide particles, facilitate the formation of a dense hole transport layer 20, and reduce the defect states inside and on the surface of the hole transport layer 20, further reduce the holes formed by direct contact between the metal oxide particles in the hole transport layer 20 and the first electrode 10 or the light-emitting layer 50, reduce leakage current, thereby effectively improving the hole transport efficiency, and further improving the light-emitting efficiency of the optoelectronic device 100.

[0236] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising a first electrode and a second electrode arranged opposite to each other, and a hole transport layer arranged between the first electrode and the second electrode, characterized in that: The photoelectric device further includes an interface layer, which is disposed between the first electrode and the hole transport layer, and includes two-dimensional molybdenum trioxide.

2. The optoelectronic device according to claim 1, characterized in that The material of the hole transport layer includes metal oxide particles, and the metal oxide particles include one or more of doped metal oxide particles and undoped metal oxide particles. The material of the undoped metal oxide particles includes NiO x , MoO3, V2O5, CrO3, CuO or more, the doped metal oxide particles include metal oxide and doping elements, the metal oxide includes NiO x , MoO3, V2O5, CrO3, CuO, and the doping elements include one or more of Ga, Li, Mg, Mn, F, Cl, Br, I, Al, and K.

3. The optoelectronic device according to claim 2, characterized in that The average particle size of the metal oxide particles is 4 to 10 nm; and / or In the doped metal oxide particles, the mass fraction of the doping element is 1 to 20%; and / or The sheet diameter of the two-dimensional molybdenum trioxide is 50 to 300 nm; and / or The average sheet diameter of the two-dimensional molybdenum trioxide is 80 nm; and / or The thickness of the two-dimensional molybdenum trioxide sheet structure is 3 to 10 nm; and / or The average thickness of the two-dimensional molybdenum trioxide sheet structure is 6 nm; and / or The thickness of the interface layer is 3-10 nm.

4. The optoelectronic device according to claim 1, characterized in that The optoelectronic device further includes a light-emitting layer, and the light-emitting layer is disposed between the first electrode and the interface layer, or the light-emitting layer is disposed between the second electrode and the hole transport layer.

5. The optoelectronic device according to claim 1, wherein: The interface layer is composed of the two-dimensional molybdenum trioxide.

6. The optoelectronic device according to claim 4, characterized in that The first electrode and the second electrode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium doped tin oxide, fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide, magnesium doped zinc oxide, aluminum doped magnesium oxide, and cadmium doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / Zn O, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes one or more of Au:Mg alloy electrode and Ag:Mg alloy electrode; and / or The material of the light-emitting layer is an organic light-emitting material or a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl-, Br - , I-one or more; and / or The photoelectric device further comprises a hole injection layer, which is arranged between the first electrode and the interface layer or between the second electrode and the hole transport layer, and the material of the hole injection layer comprises one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; and / or The photoelectric device also includes an electron transport layer, which is arranged between the first electrode and the light-emitting layer, or between the second electrode and the light-emitting layer. The material of the electron transport layer includes one or more of an inorganic electron transport material and an organic electron transport material. The inorganic electron transport material includes one or more of a metal oxide, a doped metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide includes ZnO, TiO2, SnO2, Z The invention relates to one or more of rO2, Ta2O5, and Al2O3, the dopant in the doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn; the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor material includes one or more of InP and GaP; the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; the organic electron transport material includes one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

7. A method for preparing a photoelectric device, characterized in that: The steps include: Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a first electrode; Providing two-dimensional molybdenum trioxide, and disposing the two-dimensional molybdenum trioxide on the optoelectronic device preform to form an interface layer; Preparing a hole transport layer on the interface layer, wherein the hole transport layer includes metal oxide particles; A second electrode is formed on the hole transport layer to obtain a photoelectric device.

8. The preparation method according to claim 7, characterized in that: The optoelectronic device preform further includes a light-emitting layer disposed on the first electrode; or The photoelectric device preform further comprises a hole injection layer disposed on the first electrode; or The photoelectric device preform further comprises an electron transport layer and a light emitting layer stacked on the first electrode; or The forming of the second electrode on the hole transport layer comprises: forming a stacked light emitting layer and a second electrode in sequence on the hole transport layer; or The forming of the second electrode on the hole transport layer comprises: sequentially forming a stacked light emitting layer, an electron transport layer and a second electrode on the hole transport layer; or The optoelectronic device preform further includes a light-emitting layer disposed on the first electrode, and forming the second electrode on the hole transport layer includes: sequentially forming a stacked hole injection layer and a second electrode on the hole transport layer.

9. The preparation method according to claim 7, characterized in that: The step of disposing the two-dimensional molybdenum trioxide on the photoelectric device preform to form an interface layer comprises: The two-dimensional molybdenum trioxide is dissolved in a first solvent to obtain a two-dimensional molybdenum trioxide dispersion, the two-dimensional molybdenum trioxide dispersion is disposed on the optoelectronic device preform by a solution method to form a two-dimensional molybdenum trioxide liquid film, and the two-dimensional molybdenum trioxide liquid film is annealed to obtain an interface layer.

10. The preparation method according to claim 9, characterized in that: The first solvent comprises one or more of ethanol, methanol, butanol, and N,N-dimethylformamide; and / or The concentration of the two-dimensional molybdenum trioxide dispersion is 3-8 mg / mL; and / or The temperature for annealing the two-dimensional molybdenum trioxide liquid film is 60-120° C., and the time is 5-15 minutes.

11. The preparation method according to claim 7, characterized in that: The preparation method of the two-dimensional molybdenum trioxide comprises: Providing a molybdenum salt and a second solvent, mixing them, and obtaining a molybdenum salt solution; Providing a peroxide solution, and mixing the peroxide solution with the molybdenum salt solution to obtain a molybdenum trioxide particle dispersion; An intercalation agent is added to the molybdenum trioxide particle dispersion, and ultrasonic exfoliation is performed to obtain two-dimensional molybdenum trioxide.

12. The preparation method according to claim 11, characterized in that: The molybdenum salt comprises one or more of an inorganic molybdenum salt and an organic molybdenum salt, wherein the inorganic molybdenum salt comprises one or more of ammonium molybdate, 2-ethylhexanoic acid molybdenum salt, sodium molybdate, potassium molybdate and hydrates thereof, and the organic molybdenum salt comprises molybdenum acetylacetonate; and / or The second solvent includes one or more of methanol, ethanol, butanol, and N,N-dimethylformamide; and / or The peroxide in the peroxide solution comprises one or more of H2O2, Na2O2 and K2O2; and / or The intercalant comprises one or more of n-butyl lithium, tert-butyl lithium and N-methyl pyrrolidone; and / or The molar ratio of Mo in the molybdenum salt to the peroxide in the peroxide solution is 1:(0.2-1); and / or In the molybdenum salt solution, the concentration of the molybdenum salt is 0.01 to 0.1 M; and / or The mass concentration of the peroxide solution is 10-50%; and / or The molar ratio of Mo in the molybdenum trioxide particles to the intercalation agent is 1:(0.1-1); and / or The power of the ultrasonic treatment is 200-800W; and / or The ultrasonic treatment time is 6 to 10 hours.

13. The preparation method according to claim 7, characterized in that: The method for preparing a hole transport layer on the interface layer comprises: providing a metal oxide particle dispersion, placing the metal oxide particle dispersion on the interface layer to obtain a first liquid film, and annealing the first liquid film to obtain a hole transport layer; or The method for preparing a hole transport layer on the interface layer includes: providing a precursor solution of metal oxide particles, setting the precursor solution of the metal oxide particles on the interface layer to obtain a second liquid film, annealing the second liquid film to react the precursor of the metal oxide particles to form metal oxide particles, and obtaining a hole transport layer.

14. The preparation method according to claim 13, characterized in that: The precursor solution of the metal oxide particles comprises a metal hydroxide solution, wherein the metal hydroxide in the metal hydroxide solution comprises one or more of Ni(OH)2, Mo(OH)6, V(OH)5, Cr(OH)6, Cu(OH)2; and / or The temperature for annealing the first liquid film is 100 to 250° C. and the time is 15 to 120 min; and / or The temperature for annealing the second liquid film is 100-250° C., and the time is 15-120 minutes.

15. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 6, or the display device comprises the optoelectronic device prepared by the preparation method according to any one of claims 7 to 14.

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