Vertical furnace for processing plurality of substrates and processing method

Abstract

A vertical furnace and a method for processing a plurality of substrates in the vertical furnace are disclosed. Embodiments of the currently described vertical furnace include a processing chamber, a heating element configured to provide heat to reach a desired processing temperature for processing a plurality of substrates. The vertical furnace may also include a heat distribution member for distributing heat provided by the heating element. Embodiments of the presently described methods include processing a plurality of substrates in a vertical furnace described herein.

Description

Technical Field

[0001] The present disclosure relates to a vertical furnace and a processing method for processing a plurality of substrates. More particularly, the present invention relates to a vertical furnace provided with a heat distribution member. Background Art

[0002] As semiconductor device dimensions continue to shrink, processing multiple substrates through batch processing in semiconductor manufacturing becomes increasingly demanding. This not only helps to increase process throughput, but also helps to reduce process cycle time.

[0003] In this regard, vertical furnaces are batch processing tools that can perform processes such as deposition, annealing, oxidation, and diffusion.

[0004] Some challenges associated with batch processing in vertical furnaces may involve achieving a balanced heat distribution within the process chamber. This may further affect the temperature distribution within the process chamber during processing. This may have an impact not only on the reaction kinetics, but also on the thickness non-uniformity on the surface of the substrates positioned for processing within the process chamber, which are arranged vertically in a substrate carrier. Problems caused by thickness non-uniformity may further affect subsequent processes during semiconductor manufacturing and may ultimately affect device performance.

[0005] Therefore, improved processing in vertical furnaces may be required. Summary of the invention

[0006] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the exemplary embodiments of the present disclosure below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0007] The object of the present disclosure is to improve processing in a vertical furnace. More specifically, the object is to provide improved heat distribution in a processing chamber of a vertical furnace. To at least partially achieve these objects, the present disclosure may provide a vertical furnace and method for processing multiple substrates as defined in the independent claims. Further embodiments are provided in the dependent claims.

[0008] In a first aspect, the present invention relates to a vertical furnace. The vertical furnace may be suitable for processing multiple substrates. The vertical furnace may include an inner reaction tube extending in a longitudinal direction. The inner reaction tube may be constructed and arranged to receive multiple substrates, which may be arranged in a substrate carrier. The substrate carrier may be provided with a top plate. The vertical furnace may also include an outer reaction tube. The outer reaction tube may be constructed and arranged around the inner reaction tube in the longitudinal direction. The vertical furnace may also include a heating element, which may be constructed and arranged around the outer reaction tube in the longitudinal direction. The vertical furnace may also include a heat distribution member. The heat distribution member may be constructed and arranged to face the top plate of the substrate carrier. When the substrate carrier is accommodated in the inner reaction tube, the heat distribution member may at least partially overlap with the top plate to distribute the heat provided by the heating element to the center of the substrate.

[0009] Due to the presence of the heat distribution element, the vertical furnace according to the embodiment of the first aspect of the present disclosure may advantageously allow for improved heat distribution in the reaction tube.

[0010] Another advantage is that heat distribution can be improved within an inner reactor tube in which multiple substrates are received for processing, particularly for those substrates located on top of a substrate carrier, such as those closer to a top plate of the substrate carrier.

[0011] According to the embodiments of the first aspect of the present disclosure, a further advantage is that intra-wafer non-uniformity of substrates can be reduced, especially those wafers located on the upper part of the substrate carrier.

[0012] Due to the improvement of the non-uniformity within the wafer, the process yield of the subsequent process after the process in the vertical furnace can be improved, which is also an advantage.

[0013] According to the embodiments of the first aspect of the present disclosure, a further advantage is that the processing qualification can be improved.

[0014] In a second aspect, the present invention relates to a vertical furnace. The vertical furnace may be suitable for processing a plurality of substrates. The vertical furnace may include a substrate carrier. The substrate carrier may be constructed and arranged to hold a plurality of substrates. The vertical furnace may also include an inner reaction tube extending in a longitudinal direction. The inner reaction tube may be constructed and arranged to receive the substrate carrier. The substrate carrier may be provided with a top plate. The vertical furnace may also include an outer reaction tube. The outer reaction tube may be constructed and arranged around the inner reaction tube in a longitudinal direction. The substrate carrier may include a heat distribution member. The heat distribution member may be provided on the top plate.

[0015] A vertical furnace according to an embodiment of the second aspect of the present disclosure may provide improved processing performance due to improved heat distribution due to the presence of a heat distribution element contained in the substrate carrier.

[0016] Another advantage is that heat distribution can be improved within an inner reactor tube in which multiple substrates are received for processing, particularly for those substrates located on top of a substrate carrier, such as those closer to a top plate of the substrate carrier.

[0017] According to the embodiments of the first aspect of the present disclosure, a further advantage is that intra-wafer non-uniformity of substrates can be reduced, especially those wafers located on the upper part of the substrate carrier.

[0018] Due to the improvement of the non-uniformity within the wafer, the process yield of the subsequent process after the process in the vertical furnace can be improved, which is also an advantage.

[0019] According to the embodiments of the first aspect of the present disclosure, a further advantage is that the processing qualification can be improved.

[0020] In a third aspect, the present disclosure relates to a method for processing a plurality of substrates. The method may include providing a plurality of substrates in an inner reaction tube of a vertical furnace according to an embodiment of the first aspect or the second aspect of the present disclosure. The plurality of substrates may be arranged in a substrate carrier. The method may also include providing a reaction gas mixture to the inner reaction tube, thereby forming a substrate film on each of the plurality of substrates and forming an inner reaction tube film on one or more surfaces of the inner reaction tube.

[0021] The method according to an embodiment of the third aspect of the present disclosure may allow for processing of multiple substrates, thereby improving heat distribution within the processing chamber; ie, the inner reaction tube.

[0022] Another advantage of embodiments of the third aspect of the present disclosure is the ability to process multiple substrates with reduced intra-wafer non-uniformity.

[0023] It is also an advantage that process qualification may be improved due to improved heat distribution in the process chamber during processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0025] Unless otherwise stated, the same reference numerals in the drawings will be used for the same elements. Reference numerals in the claims shall not be construed as limiting the scope.

[0026] Figure 1 and Figure 2a to Figure 2c A schematic diagram of a vertical furnace according to an embodiment of the first aspect of the present disclosure is shown.

[0027] Figure 3a to Figure 3h and Figure 4a to Figure 4bA schematic diagram of a vertical furnace according to an embodiment of the second aspect of the present disclosure is shown.

[0028] Figure 5 A flowchart of an exemplary method according to an embodiment of the third aspect of the present disclosure is shown. DETAILED DESCRIPTION

[0029] Although certain embodiments and examples are disclosed below, it will be appreciated by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0030] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0031] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0032] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided by a continuous substrate feeding system to allow the continuous substrate to be manufactured and output in any suitable form.

[0033] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets on which discontinuous substrates are mounted.

[0034] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0035] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0036] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in other orders, or may be omitted in some cases.

[0037] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0038] It should be noted that the term "comprising" used herein should not be interpreted as being limited to the means listed thereafter. It does not exclude other elements or steps. Therefore, it should be interpreted as specifying the presence of the features, steps or components mentioned. However, this does not prevent the presence or addition of one or more other steps, components or features or combinations thereof.

[0039] References to "embodiment" in various places in the specification do not necessarily refer to the same embodiment, but may refer to the same embodiment. In addition, in one or more embodiments, the particular features, structures or characteristics may be combined in any suitable manner, which is obvious to those of ordinary skill in the art.

[0040] References to "some embodiments" throughout the specification mean that the specific structures, features, and steps described in conjunction with these embodiments are included in some embodiments of the present invention. Therefore, phrases such as "in some embodiments" appearing in different places throughout the specification do not necessarily refer to the same set of embodiments, but may refer to the same set of embodiments.

[0041] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present disclosure. Therefore, the phrases "in one embodiment" or "in an embodiment" appearing in various places in this specification do not necessarily all refer to the same embodiment, but may refer to the same embodiment.

[0042] It should be noted that the term "essentially comprising" used in the claims means that in addition to those specifically mentioned components, other components may be present but are not required to be present, that is, those components that do not substantially affect the basic characteristics of the material, compound or composition involved.

[0043] The terms first, second, third, etc. in the specification and claims are used to distinguish similar elements. They are not necessarily used to describe a sequence in time, space, order, or any other manner. It should be understood that the terms so used are interchangeable where appropriate, and that the embodiments of the present disclosure described herein are capable of operating in other sequences than those described or shown herein.

[0044] The following terms are used only to aid in understanding the present disclosure.

[0045] As used herein, unless otherwise specified, the term "central portion of a substrate" may refer to a portion of a substrate proximate to the center thereof.

[0046] As used herein, unless otherwise specified, the term "within-wafer non-uniformity (WIWNU)" may refer to layer thickness variations across a substrate surface.

[0047] As used herein, unless otherwise specified, the term "process qualification" may refer to implementing the necessary remedial measures to enable a process to achieve its dedicated process performance in a given processing system.

[0048] The present disclosure will now be described by a detailed description of a plurality of embodiments of the present disclosure. It is apparent that other embodiments of the present disclosure may be configured according to the knowledge of those skilled in the art without departing from the technical teachings of the present disclosure. The present disclosure is limited only by the terms of the claims included herein.

[0049] Described herein is a vertical furnace according to an embodiment of a first aspect of the present disclosure.

[0050] Figure 1 and FIG2 shows a schematic diagram of such a vertical furnace.

[0051] The vertical furnace 100 may be suitable for processing a plurality of substrates. The vertical furnace 100 may include an inner reaction tube 120. The inner reaction tube 120 may extend in a longitudinal direction. The longitudinal direction may be a vertical direction relative to the ground where the vertical furnace is located, such as Figure 1 shown.

[0052] The inner reaction tube 120 may be constructed and arranged to receive a plurality of substrates 134. The plurality of substrates may be disposed in the inner reaction tube 120 from an opening at a lower end of the inner reaction tube 120. The plurality of substrates may be disposed in a substrate carrier 130. The substrate carrier 130 may be provided with a top plate 131.

[0053] The vertical furnace 100 may further include an outer reaction tube 110. The outer reaction tube may be constructed and arranged in a longitudinal direction around the inner reaction tube 120. In other words, the outer reaction tube may also extend in a vertical direction. In an embodiment, the inner reaction tube 120 and the outer reaction tube 110 may be positioned substantially concentrically relative to each other.

[0054] The vertical furnace 100 may further include a heating element 140. The heating element may be constructed and arranged in a longitudinal direction around the outer reaction tube 110. The heating element 140 may provide heat to achieve a processing temperature required for processing a plurality of substrates.

[0055] In some embodiments, the heating element 140 may be a cylindrical heating element. In other words, the heating element may surround the outer reaction tube 110 around its side wall in the longitudinal direction. Therefore, this may make the upper part of the outer reaction tube 110 not surrounded by the heating element.

[0056] The vertical furnace 100 may further include a heat distribution member 150. The heat distribution member may be constructed and arranged to face the top plate 131 of the substrate carrier 130. When the substrate carrier is received in the inner reaction tube 120, the heat distribution member 150 may at least partially overlap the top plate 131 to distribute heat provided by the heating element 140 toward the center of the substrate 134.

[0057] Thus, the heating element 140 may extend in the longitudinal direction to substantially the same height as the outer reaction tube 110. When the substrate carrier 130 is thus received in the inner reaction tube 120 for processing a plurality of substrates 134, the heating element 140 may provide heat to substantially all substrates 134 that may be arranged in the substrate carrier 130.

[0058] Due to the presence of the heat distribution element, the vertical furnace 100 can advantageously allow for improved heat distribution in the inner reaction tube 120. The improved heat distribution can improve temperature driven phenomena occurring on the substrate surface, such as oxidation, diffusion, deposition. The improved heat distribution can further improve, for example, thermal annealing processes.

[0059] Furthermore, the improved heat distribution can advantageously reduce intra-wafer non-uniformities. In this regard, advantages can be obtained, in particular for substrates located on the upper slots of the substrate carrier 130.

[0060] When the substrate carrier 130 is located within the inner reactor tube 120, the upper grooves of the substrate carrier may be those grooves closer to the inner surface 111 of the outer reactor tube 110. The advantage obtained may be due to the fact that heat losses are reduced, which are generally higher in the upper portion of the inner reactor tube 120 than in the center thereof.

[0061] Without wishing to be bound by theory, it can be said that this may be caused by the lack of a top heater in the vertical furnace 100. While substrates located in the center slot of the substrate carrier may be exposed to uniform heat distribution due to the substrates still being located above and below the center portion of the substrate carrier, substrates located in the upper slots may experience reduced heat distribution due to the lack of a top heater. Therefore, the difference in heat distribution between substrates located in the upper slots may result in increased intra-wafer non-uniformity for substrates located in the upper slots compared to the center slot of the substrate carrier.

[0062] Improving intra-wafer non-uniformity can also have an impact on the yield of subsequent processes. Having different layer thicknesses on the substrate surface may cause challenges to subsequent processes, such as further deposition processes, patterning including lithography and etching. This may result in some substrates being scrapped due to the reduced yield of such subsequent processes. Therefore, improving intra-wafer non-uniformity may be beneficial in reducing the risk of jeopardizing the yield of such subsequent processes.

[0063] Thus, another advantage is that process qualification can be improved so that a target substrate load size in a substrate carrier can be processed with substantially the same intra-wafer non-uniformity value for all substrates held therein.

[0064] In some embodiments, the inner reaction tube 120 may be defined by a closed top end 121, such as Figure 2a It is schematically shown in FIG.

[0065] When the substrate carrier 130 is thus received inside the inner reaction tube 120, the top plate 131 of the substrate carrier 130 faces the lower surface 121b of the closed top end 121. The upper surface 121a of the closed top end 121 is positioned opposite to the lower surface 121b of the closed top end 121.

[0066] In these embodiments, a heat distribution member 150 may be provided at the closed top end 121. This may allow for enhanced heat distribution from the heating element 140 to the center of the substrate 134. This is particularly advantageous for substrates located on the upper slot of the substrate carrier 130. The presence of the heat distribution member 150 may advantageously help the heat provided by the heating element 140 through the sidewalls of the outer reaction tube 110 to be further transferred to the inner reaction tube 120 to be redistributed toward the center of these substrates.

[0067] In an embodiment, the heat distribution member 150 may be provided to a surface portion of the closed top end 121. The closed top end 121 may have an upper surface 121a. The upper surface 121a may face the inner surface 111 of the outer reaction tube 110. The closed top end 121 may also have a lower surface 121b that faces away from the inner surface 111 of the outer reaction tube 110 and is opposite to the upper surface 121a of the closed top end 121.

[0068] In an embodiment, the heat distribution member 150 may be in the form of a plate, a disk, etc., which may allow for easy placement on the surface of the closed top end 121 .

[0069] In some embodiments, the surface portion of the closed top end 121 on which the heating element is disposed may be the upper surface 121a of the closed top end 121. Figure 2b Schematically represented in .

[0070] In an embodiment, the heat distribution member 150 may be constructed and arranged to be received on the upper surface 121 a of the closed top end 121 .

[0071] Due to the presence of gravity, the heat distribution member 150 may be positioned at the closed top end 121 , which may provide an advantage of easily providing the heat distribution member 150 to the closed top end 121 .

[0072] In some embodiments, the heat distribution member 150 may be provided to the upper surface 121a of the closed top end 121 by connection means such as bolts, screws or ropes, thereby allowing for a more robust and reliable arrangement.

[0073] In some embodiments, the heat distribution member 150 may be disposed on the lower surface 121b of the closed top end 121, such as Figure 2c In other words, in these embodiments, the upper surface 121a of the closed top end 120 can remain exposed.

[0074] In an embodiment, the heat distribution member 150 may be provided to the lower surface 121 b of the closed top end 121 by a connection means such as bolts, screws or ropes.

[0075] In an embodiment, the heat distribution member 150 may at least partially overlap the surface 121a; 121b of the closed top end 121 on which it is disposed, in terms of its surface area.

[0076] In some embodiments, the heat distribution member 150 may overlap at least a surface area of ​​the top plate 131 of the substrate carrier 130 when the substrate carrier is received in the inner reaction tube.

[0077] In some embodiments, the heat distribution member 150 may substantially overlap the surface of the closed top end 121 on which it is disposed. In other words, the surface area of ​​the heat distribution element may be substantially the same as the surface area of ​​the closed top end 121 on which it is disposed.

[0078] In some embodiments, the thickness of the heat distribution component may be in the range of 2 mm to 35 mm. In some embodiments, the thickness of the heat distribution component may be in the range of 5 mm to 25 mm. In some embodiments, the thickness may be in the range of from at least 5 mm to at most 10 mm, or from at least 10 mm to at most 15 mm, or from at least 15 mm to at most 20 mm, or from at least 20 mm to at most 25 mm, or from at least 25 mm to at most 30 mm, or from at least 30 mm to at most 35 mm.

[0079] In an embodiment, the surface of the heat distribution member 150 may have roughness. When roughness is present on the surface of the heat distribution member that may come into contact with the upper surface 121a of the closed top end 121 of the inner reaction tube 120, it may advantageously allow for enhanced gripping with the upper surface 121a of the closed top end 121, thereby preventing slippage and thereby providing improved stability to the heat distribution member 150.

[0080] When roughness is present on the surface of the heat distribution member opposite to the surface that may contact the lower surface 121b of the closed top end 121 of the inner reaction tube 120, film deposition may also occur on the rough surface. The rough surface can accommodate more deposition material adhering to the rough surface, thereby allowing thicker film deposition. Thicker film deposition on the rough surface can advantageously provide the film deposited thereon with increased resistance to stress release. This can help reduce particle formation within the inner reaction tube 120. Reducing particle formation can advantageously increase the yield of the process performed in the vertical furnace 100.

[0081] In an embodiment, the vertical furnace may further include a gas injector constructed and arranged to provide a precursor gas or a process gas to the inner reaction tube 120. The gas injector may be a multi-hole gas injector including a plurality of gas outlets along its longitudinal dimension.

[0082] In an embodiment, the inner reaction tube 120 having the closed top end 121 may be constructed and arranged to enable the process gas within the inner reaction tube 120 to flow laterally, or in other words, horizontally. This may be provided by exhaust openings or slits that may correspond horizontally to each of the plurality of gas outlets included in the porous gas injector. This may be advantageous in allowing the precursor gas or process gas to flow parallel to the surface of each substrate disposed in the substrate carrier.

[0083] A vertical furnace according to a second aspect of the present disclosure is further described herein. Figure 3 shows a schematic diagram of a vertical furnace according to an embodiment of the second aspect of the present disclosure.

[0084] The vertical furnace 100 may be suitable for processing a plurality of substrates. The vertical furnace 100 may be suitable for processing a plurality of substrates. The vertical furnace 100 may include an inner reaction tube 120. The inner reaction tube 120 may extend in a longitudinal direction. The longitudinal direction may be a vertical direction relative to the ground on which the vertical furnace 100 is located, such as Figure 3a Shown schematically.

[0085] The vertical furnace 100 may include a substrate carrier 130. The substrate carrier may be constructed and arranged to hold a plurality of substrates 134.

[0086] The inner reaction tube 120 may be constructed and arranged to receive a substrate carrier 130. A plurality of substrates may be disposed in the inner reaction tube 120 from an opening at a lower end thereof. A plurality of substrates may be disposed in the substrate carrier 130. The substrate carrier 130 may be provided with a top plate 131.

[0087] The vertical furnace 100 may further include an outer reaction tube 110. The outer reaction tube may be constructed and arranged around the inner reaction tube 120 in the longitudinal direction. In other words, the outer reaction tube 110 may also extend in the vertical direction. The vertical furnace 100 may further include a heating element 140. The heating element 140 may be constructed and arranged around the outer reaction tube 110 in the longitudinal direction. The substrate carrier 130 may include a heat distribution member 150. The heat distribution member 150 may be disposed on the top plate 131.

[0088] In some embodiments, the heating element 140 may be a cylindrical heating element. In other words, the heating element may surround the outer reaction tube 110 around its side wall in the longitudinal direction. Therefore, this may make the upper part of the outer reaction tube 110 not surrounded by the heating element.

[0089] In an embodiment, the inner reaction tube 120 and the outer reaction tube 110 may be positioned substantially concentrically relative to each other.

[0090] In an embodiment, when disposed on the top plate 131 , the heat distribution member 150 may at least partially overlap the top plate 131 in terms of its surface area.

[0091] In some embodiments, the heat distribution member 150 may have substantially the same surface area as the top plate 131 .

[0092] The vertical furnace 100 is also advantageous in terms of improved heat distribution due to the presence of the heat distribution element 150 disposed on the top plate 131. Heat losses that may occur through the upper portion of the inner reaction tube 120 may be reduced. Such heat losses may occur due to the lack of a top heater in the vertical furnace 100. The presence of the heat distribution member 150 may therefore help to supply heat to the central portion of the substrate 134. This may be particularly advantageous for substrates 134 located in the upper grooves 132 of the substrate carrier, such as those located closer to the top plate 131. The upper grooves of the substrate carrier 130 may be those grooves that are closer to the inner surface 111 of the outer reaction tube 110 when the substrate carrier 130 is located inside the inner reaction tube 120.

[0093] While substrates located in the center slot 132 of the substrate carrier may experience uniform heat distribution because the substrates are still located above and below the center portion of the substrate carrier, substrates located in the upper slots may experience reduced heat distribution due to the lack of a top heater. Therefore, the difference in heat distribution between substrates located in the upper slots may result in increased wafer non-uniformity for substrates located in the upper slots compared to the center slot of the substrate carrier.

[0094] Improving heat distribution on the substrate surface can advantageously reduce intra-wafer non-uniformity. This may be particularly advantageous for substrates 134 located in the upper slots of the substrate carrier.

[0095] Thus, according to embodiments of the first aspect of the present disclosure, advantageously, process qualification may be improved such that a target substrate load size in a substrate carrier may be processed with substantially the same intra-wafer non-uniformity value for all substrates held therein.

[0096] In an embodiment, the heat distribution member 150 may be releasably attached to the top plate 131. This may facilitate easy access to the heat distribution member 150 in the event of maintenance and / or replacement.

[0097] In an embodiment, the substrate carrier 130 may include at least two rods 133. The at least two rods may extend from the bottom plate of the substrate carrier 130 to the top plate 131 and connect the bottom plate to the top plate. In some embodiments, the substrate carrier may include three rods, two of which may be referred to as side rods. Each of the at least two rods 133 may include a plurality of slots 132. The substrate carrier 130 may include another heat distribution member 150. Figure 3b As schematically shown in FIG. 1 , another heat distribution member may be disposed in the topmost groove 132 of the substrate carrier 130 .

[0098] This may provide the advantage of enhanced heat distribution on the substrate carrier. This may be particularly advantageous in providing enhanced heat distribution for a substrate located on an upper portion of the substrate carrier.

[0099] In some embodiments, another heat distribution member may be disposed in the lowermost slot (not shown) of the substrate carrier 130. This may provide heat distribution for the substrate located at the lower portion of the substrate carrier 130. In embodiments, the another heat distribution member to be disposed at the lower portion of the substrate carrier may be substantially the same as or different from the heat distribution member to be disposed at the upper portion of the substrate carrier.

[0100] It may be advantageous for the heat distribution component to be present in an upper or lower portion of the substrate carrier so that the heat distribution component can be easily removed from the substrate carrier 130 when performing preventive maintenance.

[0101] In an embodiment, the inner reaction tube 120 may be Figure 3a The open top schematically shown in Figure 3c 121 schematically shown in the figure. Thus, the presence of the heat distribution member 150 provided to the top plate 131 of the substrate carrier 130 can provide more effective heat distribution to the center of the substrate, especially those held in the upper groove 132. When the inner reaction tube is restricted by the closed top ( Figure 3c ), which may be particularly advantageous. This may be due to the closed top end creating a closed volume of space above the substrate carrier 130, so that the heat transferred by the heating element 140 can be captured and redirected in a more efficient manner.

[0102] In an embodiment, the inner reaction tube 120 having the closed top end 121 may be constructed and arranged to enable the process gas to flow laterally, or in other words, horizontally, within the inner reaction tube 120. This may be provided by exhaust openings or slits, which may correspond horizontally to each of the plurality of gas outlets included in the porous gas injector. This may be advantageous in allowing the precursor gas or the process gas to flow parallel to the surface of each substrate arranged in the substrate carrier.

[0103] In some embodiments, Figure 3d As schematically shown in FIG. 1 , a substrate carrier 130 having heat distribution members 150 disposed on both its top plate 131 and the topmost groove 132 can be received in an inner reaction tube 120 defined by a closed top end 131. This configuration can further enhance heat distribution. Therefore, this can allow for more effective reduction of the WIWNU of a substrate located particularly in the upper groove 132 of the substrate carrier 130.

[0104] In some embodiments, the heat distribution member 150 may be further included in the closed top end 120 of the inner reaction tube. Figure 3e , Figure 3f , Figure 3g , Figure 3h As schematically shown, the heat distribution member 150 may be disposed on a surface portion of the closed top end 120 .

[0105] In some embodiments, the surface portion of the closed top end 120 provided with the heat distribution member 150 may be the upper surface 121a of the closed top end 121, such as Figure 3e and Figure 3g Schematically shown. Therefore, the upper surface 121a of the closed top end 120 can face the inner surface 111 of the outer reaction tube 110. Therefore, the inner surface 111 of the outer reaction tube 110 facing the upper surface 121a of the inner reaction tube 120 can be the upper inner surface of the outer reaction tube 110. The upper inner surface 111 can be located at the upper part of the outer reaction tube and face the ground where the vertical furnace is located. As seen in these embodiments, the substrate carrier 130 can have a heat distribution element 150 disposed on its top plate 131.

[0106] In some embodiments, the surface portion of the closed top end 120 provided with the heat distribution member may be the lower surface 121b of the closed top end 121. The lower surface 121b of the closed top end 120 may thus face the upper surface of the heat distribution member 150, which may be provided to the top plate 131 of the substrate carrier 130, such as Figure 3f and Figure 3h As seen in these embodiments, the substrate carrier 130 may have a heat distribution element 150 disposed on its top plate 131 and on its topmost grooves 132 .

[0107] In an embodiment, heat distribution member 150 may be constructed of a thermally conductive material. Thermally conductive materials may provide advantages in collecting and then redistributing heat emitted from heating element 140 toward inner reactor tube 120, particularly in the upper portion of the inner reactor tube where there may not be a top heater disposed therein.

[0108] In an embodiment, the thermally conductive material may include silicon.

[0109] In some embodiments, the thermally conductive material may substantially include at least one of silicon and silicon carbide. Such a heat distribution member 150 may be advantageous so that when the substrate carrier is made of a material containing Si (e.g., silicon carbide), it does not cause any mismatch in the thermal conductivity of the substrate carrier 130. In addition, such a heat distribution member 150 may also be advantageous when coupled with a substrate carrier made of quartz. Quartz substrate boats may be preferred over silicon carbide substrate carriers because they are more economical. Therefore, as disclosed herein, the presence of the heat distribution element 150 may provide an effective heat distribution means inside the inner reaction tube 120 while also providing an economic advantage.

[0110] In an embodiment, the outer reaction tube 110 may be defined by a dome-shaped top end 112, such as Figure 1Schematically shown in FIG. The dome-shaped top 112 may include a coating 113. In an embodiment, the coating 113 may be a reflective coating. Without a top heater, heat loss toward the top of the outer reaction tube 110 may become significant. Therefore, the reflective coating may provide the advantage of reducing heat loss from the dome-shaped top 112 during processing of multiple substrates 134.

[0111] In an embodiment, the reflective coating may be, for example, a high temperature resistant paint, which may be applied directly onto the dome-shaped tip 112 .

[0112] In an embodiment, the reflective coating 113 may include silicon.

[0113] In some embodiments, the reflective coating may consist essentially of silicon.

[0114] It may be advantageous to combine the silicon-containing reflective coating 113 with the quartz outer reactor tube 110. This may reduce the risk of thermal mismatch between the reflective coating 113 and the outer reactor tube 110.

[0115] In some embodiments, the coating 113 may be included on the inner surface 111 of the dome-shaped top end of the top plate 131 facing the substrate carrier, such as Figure 4b It is schematically shown in FIG.

[0116] In some embodiments, the coating 113 may be included on an outer surface of the dome-shaped top 112 that is opposite to the inner surface 111 of the dome-shaped top. Figure 4a 1. This may be advantageous when performing an in-situ cleaning process to clean one or more inner surfaces of the outer reaction tube 110. One or more inner surfaces of the outer reaction tube 110 may also be coated due to processing in the vertical furnace 100, especially when the inner reaction tube 120 is defined by an open top end. Therefore, by having a coating on the outer surface of the dome-shaped top end 112, the coating may be advantageously prevented from being removed during the in-situ cleaning process.

[0117] A method of processing a plurality of substrates according to a third aspect of the present disclosure is further described herein. Figure 5 A flowchart illustrating an exemplary method according to an embodiment of the third aspect of the present disclosure may be represented.

[0118] The method 1000 may include providing a plurality of substrates 1010 in an inner reaction tube 120 of a vertical furnace according to the first aspect or the second aspect of the present disclosure. The plurality of substrates 134 may be arranged in a substrate carrier 130 .

[0119] The method 1000 may further include providing 1020 a reaction gas mixture to the inner reaction tube 120 . This may result in forming a substrate film on each of the plurality of substrates 134 and forming an inner reaction tube film on one or more surfaces of the inner reaction tube 120 .

[0120] In an embodiment, the substrate film and the inner reaction tube film may include oxide or nitride.

[0121] As processing continues in the vertical furnace, the presence of the inner reactor tube film may pose a risk in the long term. Increased thickness of the inner reactor tube film layer on one or more surfaces of the inner reactor tube 120 may be associated with particle generation, which can reduce processing yield. However, process controls can be implemented to monitor the increase in thickness as a function of turnover number, and measures can then be taken to clean the reactor tube inner film.

[0122] Therefore, in an embodiment, method 1000 may further include repeatedly providing the reaction gas mixture one or more times until the thickness of the inner reaction tube membrane reaches a predetermined thickness. When the thickness of the inner reaction tube membrane reaches the predetermined thickness, the method may include exposing one or more surfaces of the inner reaction tube 120 to the environment in situ, thereby removing the inner reaction tube membrane. In other words, the inner reaction tube membrane can be cleaned in situ.

[0123] The embodiments of the present disclosure do not limit the scope of the present invention, because these embodiments are defined by the claims attached hereto and their legal equivalents. Any equivalent embodiments are within the scope of the present invention. In addition to the content disclosed herein, modifications different from each other of the present disclosure will be apparent to those skilled in the art. Such modifications and embodiments derived therefrom are also intended to fall within the scope of the claims attached hereto.

Claims

1. A vertical furnace for processing a plurality of substrates, comprising: an inner reaction tube extending in a longitudinal direction and constructed and arranged to receive a plurality of substrates arranged in a substrate carrier, the substrate carrier being provided with a top plate, - an outer reaction tube, which is constructed and arranged around the inner reaction tube in the longitudinal direction, a heating element which is constructed and arranged around the outer reaction tube in the longitudinal direction, in, The vertical furnace also includes a heat distribution member constructed and arranged to face the top plate of the substrate carrier and at least partially overlap the top plate when the substrate carrier is accommodated in the inner reaction tube to distribute heat provided by the heating element toward the center of the substrate.

2. The vertical furnace according to claim 1, wherein: The inner reaction tube is defined by a closed top end, and wherein the heat distribution member is disposed at the closed top end.

3. The vertical furnace according to claim 2, wherein: The heat distribution member is disposed on a surface portion of the closed top end.

4. The vertical furnace according to claim 3, wherein: The surface portion of the closed top end is an upper surface of the closed top end, which faces the inner surface of the outer reaction tube.

5. The vertical furnace according to claim 4, wherein: The heat distribution member is constructed and arranged to be received on an upper surface of the closed top end.

6. The vertical furnace according to claim 3, wherein: The surface portion of the top end is a lower surface of the closed top end, which faces away from the inner surface of the outer reaction tube.

7. A vertical furnace for processing a plurality of substrates, comprising: - a substrate carrier constructed and arranged to hold a plurality of substrates, - an inner reaction tube extending in a longitudinal direction and constructed and arranged to receive a substrate carrier provided with a top plate, - an outer reaction tube, which is constructed and arranged around the inner reaction tube in the longitudinal direction, a heating element which is constructed and arranged around the outer reaction tube in the longitudinal direction, in, The substrate carrier includes a heat distribution member disposed on the top plate.

8. The vertical furnace according to claim 7, wherein: The heat distribution member is releasably attached to the top plate.

9. The vertical furnace according to claim 7 or 8, wherein: The substrate carrier comprises at least two rods, wherein each rod comprises a plurality of slots, and wherein the substrate carrier comprises a further heat distribution member arranged in a topmost slot.

10. The vertical furnace according to any one of claims 7 to 9, wherein: The inner reaction tube is defined by an open top or a closed top.

11. The vertical furnace according to claim 10, wherein: The inner reaction tube is defined by the closed top end, and wherein the heat distribution member is further contained in the closed top end and disposed on a surface portion of the closed top end.

12. The vertical furnace according to claim 11, wherein: The surface portion of the closed top end is an upper surface of the closed top end facing the inner surface of the outer reaction tube, or the surface portion of the top end is a lower surface of the closed top end facing away from the inner surface of the outer reaction tube.

13. The vertical furnace according to any one of claims 1 to 12, wherein: The heat distribution element is made of a thermally conductive material.

14. The vertical furnace according to claim 13, wherein: The thermally conductive material essentially includes at least one of silicon and silicon carbide.

15. The vertical furnace according to any one of claims 1 to 14, wherein: The outer reaction tube is defined by a dome-shaped top end, wherein the dome-shaped top end includes a coating.

16. The vertical furnace according to claim 15, wherein: The coating is a reflective coating, thereby reducing heat loss from the domed tip during handling.

17. The vertical furnace according to claim 15 or 16, wherein: The coating is included on an inner surface of the dome-shaped top end facing the top plate, or on an outer surface of the dome-shaped top end, the outer surface being opposite to the inner surface.

18. A method of processing a plurality of substrates, the method comprising: - providing a plurality of substrates in an inner reaction tube of a vertical furnace according to claim 1 or 7, and wherein the plurality of substrates are arranged in a substrate carrier, - providing a reaction gas mixture to the inner reaction tube, thereby forming a substrate film on each of the plurality of substrates and forming an inner reaction tube film on one or more surfaces of the inner reaction tube.

19. The method according to claim 18, wherein: The method further includes: - Repeatedly providing the reaction gas mixture one or more times until the inner reaction tube film reaches a predetermined thickness; and - When the inner reaction tube film reaches a predetermined thickness, one or more surfaces of the inner reaction tube are exposed in situ to the environment, thereby removing the inner reaction tube film.

20. The method according to claim 18 or 19, wherein: The substrate film and the inner reaction tube film include oxide or nitride.

Images