Pattern correction method

Abstract

The graph correction method comprises the steps that iteration correction processing is conducted for multiple times, specifically, an initial graph or a correction graph obtained in previous iteration correction is corrected, a correction graph corresponding to the initial graph is obtained, and the contour edge of the correction graph comprises a plurality of first-class correction segments and a plurality of second-class correction segments; simulation exposure is conducted on the correction graph, an exposure graph corresponding to the correction graph is obtained, the exposure graph comprises a target exposure graph area, and the contour edge of the target exposure graph area corresponds to the multiple second-class correction fragments; according to a first edge placement error corresponding to each first type of correction fragment of the correction graph, a second edge placement error corresponding to each second type of correction fragment and the size change of the target exposure graph area in the first direction, determining an evaluation function of the correction graph in the current iteration correction processing; and according to the evaluation function in the current iteration correction processing, whether to enter the next iteration correction processing or not is judged, so that the accuracy of graph correction is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a pattern correction method. Background Art

[0002] In semiconductor manufacturing, as the design size continues to shrink, the optical proximity effect (OPE) caused by the exposure system has become increasingly influential. To this end, the optical proximity correction (OPC) method is used to correct the errors in the photolithography process, that is, the mask is pre-processed before photolithography to achieve pre-correction, so that the amount of correction compensation can just compensate for the optical proximity effect caused by the exposure system. The mask made of the wafer layout corrected by OPC can obtain the expected target pattern on the wafer after photolithography.

[0003] However, existing optical proximity correction methods still need to be further improved. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a graphics correction method to improve the graphics correction effect.

[0005] In order to solve the above technical problems, the technical solution of the present invention provides a method for correcting a graphic, comprising: providing an initial layout, the initial layout comprising a reference graphic and a plurality of initial graphics, the reference graphic extending along a first direction, the plurality of initial graphics extending along a second direction, the first direction and the second direction being perpendicular to each other, the initial graphic spanning the reference graphic along the second direction and partially overlapping with the reference graphic, the initial graphic having a first type of contour edge that does not overlap with the reference graphic, and a second type of contour edge that overlaps with the reference graphic; segmenting the first type of contour edge and the second type of contour edge of the initial graphic, obtaining a plurality of first type segments with the first type of contour edge, and obtaining a plurality of second type segments with the second type of contour edge; performing a plurality of iterative correction processes on the initial graphic until the evaluation function of each corrected graphic obtained reaches a minimum value, each iterative correction process comprising: correcting the initial graphic or the last iterative correction; The correction pattern obtained in the process is corrected to obtain a correction pattern corresponding to the initial pattern, wherein the contour edge of the correction pattern includes a plurality of first-type correction segments and a plurality of second-type correction segments, wherein the first-type correction segments correspond to the first-type segments, and the second-type correction segments correspond to the second-type segments; the correction pattern is simulated exposed to obtain an exposure pattern corresponding to the correction pattern, wherein the exposure pattern includes a target exposure pattern area, and the contour edge of the target exposure pattern area corresponds to a plurality of second-type correction segments; according to the first edge placement error corresponding to each of the first-type correction segments of the correction pattern, the second edge placement error corresponding to each of the second-type correction segments, and the size change of the target exposure pattern area in the first direction, the evaluation function of the correction pattern in the current iterative correction process is determined; according to the evaluation function of the correction pattern in the current iterative correction process, whether to enter the next iterative correction process is determined.

[0006] Optionally, the contour edge of the exposure pattern includes: a plurality of first-category exposure fragments and a plurality of second-category exposure fragments, the first-category exposure fragments correspond to the first-category correction fragments, the second-category exposure fragments correspond to the second-category correction fragments, and a plurality of the second-category exposure fragments constitute the contour edge of the target exposure pattern area.

[0007] Optionally, determining the evaluation function of the correction pattern in the current iterative correction process according to the first edge placement errors corresponding to each first-type correction segment of the correction pattern, the second edge placement errors corresponding to each second-type correction segment, and the size change in the first direction of the target exposure pattern area corresponding to the correction pattern includes: obtaining the first edge placement errors corresponding to each first-type correction segment; obtaining the second edge placement errors corresponding to each second-type correction segment; obtaining the difference between the maximum size and the minimum size of the target exposure pattern area at the second-type exposure segment position corresponding to each second-type correction segment in the first direction as the size change in the first direction of the target exposure pattern area corresponding to the second-type correction segment; obtaining the evaluation function of the correction pattern according to a number of the first edge placement errors, a number of the second edge placement errors, and a number of the size changes as follows:

[0008]

[0009] Among them, EPE 1,m is the first edge placement error corresponding to the mth first-type correction segment, EPE 2,n is the second edge placement error corresponding to the nth second type correction segment, CDV n is the size change of the target exposure pattern area corresponding to the nth second-type correction segment in the first direction, M is the number of the first-type correction segments in the correction pattern, and N is the number of the second-type correction segments in the correction pattern.

[0010] Optionally, the method for obtaining the first edge placement error corresponding to each first-type corrected segment includes: obtaining the first edge placement error according to a position offset degree of the first-type exposed segment relative to the first-type segment.

[0011] Optionally, the method for obtaining the second edge placement error corresponding to each of the second-type corrected segments includes: obtaining the second edge placement error according to a position offset degree of the second-type exposed segments relative to the second-type segments.

[0012] Optionally, segmenting the first-type contour edges and the second-type contour edges of each of the initial graphics includes: segmenting the contour edges of each of the initial graphics with a preset step size to segment the first-type contour edges and the second-type contour edges.

[0013] Optionally, segmenting the first type of contour edges and the second type of contour edges of each of the initial graphics includes: segmenting the first type of contour edges with a first step length, and segmenting the second type of contour edges with a second step length, wherein the second step length is less than or equal to the second step length.

[0014] Optionally, the determination of whether to enter the next iterative correction process is made based on the evaluation function of each corrected graphic in the initial layout obtained in the current iterative correction process, including: providing a preset value; if the evaluation functions of all the corrected graphics in the initial layout are less than or equal to the preset value, stopping the iterative correction process, otherwise, entering the next iterative correction process.

[0015] Optionally, the reference pattern includes an active area pattern, and some of the initial patterns include gate patterns.

[0016] Optionally, the method further includes: forming a correction layout using a plurality of the correction graphics.

[0017] Optionally, a plurality of the initial graphics are also arranged along the first direction.

[0018] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0019] The graphic correction method in the technical solution of the present invention, in performing several iterative correction processes on the initial graphic, determines the evaluation function of the corrected graphic in the current iterative correction process based on the first edge placement error, the second edge placement error, and the size change of the target exposure graphic area in the first direction, so as to minimize not only the edge placement error but also the size change of the exposure graphic; at the same time, in order to reduce the amount of calculation for graphic correction, in the technical solution provided by the present application, only the size change of the partial area where the exposure graphic and the reference graphic overlap (i.e., the target exposure graphic area) is considered, while the size change of the partial area where the exposure graphic and the reference graphic do not overlap is ignored, so that the complexity of the graphic correction is less affected on the basis of considering the mutual influence of the patterns of the upper and lower layers of the semiconductor process and improving the accuracy of the graphic correction. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figures 1 to 3 is a flow chart of a method for correcting a graphic in one embodiment of the present invention;

[0021] Figures 4 to 9 It is a structural schematic diagram of each step of the image correction method in one embodiment of the present invention. DETAILED DESCRIPTION

[0022] As described in the background art, the existing optical proximity correction method still needs to be further improved.

[0023] In the existing optical proximity correction method, after the original layout pattern is provided, the entire optical proximity correction process includes multiple cycles. Each cycle corrects the original layout pattern to obtain an adjusted initial sub-pattern, and calculates the edge placement error (Edge Placement Error, abbreviated as EPE). By judging whether the edge placement error meets the standard, it is judged whether the correction is completed, and finally a corrected pattern that meets the standard is obtained.

[0024] However, judging whether the correction is complete only by whether the edge placement error meets the standard may result in a large error in the size of the pattern after correction. At the same time, the existing optical proximity correction method generally only corrects the current layer without referring to the upper and lower layers, but the pattern performance between different lithography layers in the chip manufacturing process affects each other. Therefore, a method is urgently needed to improve the accuracy of pattern correction.

[0025] In order to solve the above problems, the present invention provides a graphic correction method. In performing several iterative correction processes on the initial graphic, based on the first edge placement error, the second edge placement error, and the size change of the target exposure graphic area in the first direction, the evaluation function of the corrected graphic in the current iterative correction process is determined, so that not only the edge placement error is minimized, but also the size change of the exposure graphic is minimized; at the same time, in order to reduce the amount of calculation for graphic correction, the technical solution provided in the present application only considers the size change of the partial area where the exposure graphic and the reference graphic overlap (i.e., the target exposure graphic area), while ignoring the size change of the partial area where the exposure graphic and the reference graphic do not overlap. On the basis of considering the mutual influence of the patterns of the upper and lower layers of the semiconductor process and improving the accuracy of the graphic correction, the complexity of the graphic correction is less affected.

[0026] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0027] Figures 1 to 3 It is a flowchart of a method for correcting a graphic in one embodiment of the present invention.

[0028] Please refer to Figure 1 and Figure 2 , the graphics correction method comprises the following steps:

[0029] Step S101, providing an initial layout, wherein the initial layout includes a reference pattern and a plurality of initial patterns, wherein the reference pattern extends along a first direction, and the plurality of initial patterns extend along a second direction, wherein the first direction and the second direction are perpendicular to each other, wherein the initial pattern crosses the reference pattern along the second direction and partially overlaps with the reference pattern, and wherein the initial pattern has a first type of contour edge that does not overlap with the reference pattern, and a second type of contour edge that overlaps with the reference pattern;

[0030] Step S102, segmenting the first-type contour edges and the second-type contour edges of the initial graphic, obtaining a plurality of first-type segments from the first-type contour edges, and obtaining a plurality of second-type segments from the second-type contour edges;

[0031] Step S103, performing several iterative correction processes on the initial graph until the evaluation function of each corrected graph obtained reaches a minimum value, and each iterative correction process includes:

[0032] Step S1031, correcting the initial figure or the corrected figure obtained in the last iterative correction, to obtain a corrected figure corresponding to the initial figure, wherein the contour edge of the corrected figure includes a plurality of first-type corrected segments and a plurality of second-type corrected segments, wherein the first-type corrected segments correspond to the first-type segments, and the second-type corrected segments correspond to the second-type segments;

[0033] Step S1032, performing simulated exposure on the correction pattern to obtain an exposure pattern corresponding to the correction pattern, wherein the exposure pattern includes a target exposure pattern area, and the contour edge of the target exposure pattern area corresponds to a plurality of the second-type correction segments;

[0034] Step S1033, determining the evaluation function of the correction pattern in the current iterative correction process according to the first edge placement errors corresponding to the first-type correction segments of the correction pattern, the second edge placement errors corresponding to the second-type correction segments of the correction pattern, and the size change of the target exposure pattern area in the first direction;

[0035] Step S1034, determining whether to enter the next iterative correction process according to the evaluation function of the correction graph in the current iterative correction process.

[0036] Here, in performing several iterative correction processes on the initial graphic, based on the first edge placement error, the second edge placement error, and the size change of the target exposure graphic area in the first direction, the evaluation function of the corrected graphic in the current iterative correction process is determined, so that not only the edge placement error but also the size change of the exposure graphic is minimized; at the same time, in order to reduce the amount of calculation for graphic correction, the technical solution provided in the present application only considers the size change of the partial area where the exposure graphic and the reference graphic overlap (i.e., the target exposure graphic area), while ignoring the size change of the partial area where the exposure graphic and the reference graphic do not overlap. This reduces the complexity of the graphic correction while taking into account the mutual influence of the patterns of the upper and lower layers of the semiconductor process and improving the accuracy of the graphic correction.

[0037] The following is a detailed description with reference to the accompanying drawings.

[0038] Figures 4 to 9 It is a structural schematic diagram of each step of the image correction method in one embodiment of the present invention.

[0039] Execute step S101, please refer to Figure 4 , providing an initial layout, the initial layout comprising a reference graphic 201 and a plurality of initial graphics 202, the reference graphic 201 extending along a first direction X, the plurality of initial graphics 202 extending along a second direction Y, the first direction X and the second direction Y being perpendicular to each other, the initial graphic 202 spanning the reference graphic 201 along the second direction Y and partially overlapping with the reference graphic 201, the initial graphic 202 having a first type of contour edge 202a that does not overlap with the reference graphic 201, and a second type of contour edge 202b that overlaps with the reference graphic 201.

[0040] In this embodiment, the plurality of initial graphics 202 are also arranged along the first direction X.

[0041] In this embodiment, the initial layout further includes a plurality of reference patterns 201 arranged along the second direction Y.

[0042] In this embodiment, the reference pattern 201 includes an active area pattern, and the initial patterns 202 include a gate pattern. The gate pattern is used to form a gate of a MOS device, and the active area pattern is used to form an active area of ​​the MOS device. For a MOS device, the active area covered by the gate structure forms a channel, and the size of the gate structure overlapping the active area has a greater impact on the length of the channel. Therefore, the requirement for the correction accuracy of the second type of contour edge 202b is higher than the requirement for the correction accuracy of the first type of contour edge 202a.

[0043] Subsequently, after correcting the initial patterns 202, several corrected patterns can be obtained, and the corrected patterns form a corrected version. The corrected version is used to prepare a mask having the corrected patterns thereon, and the mask is used to transfer the corrected patterns to the substrate surface.

[0044] Execute step S102, please refer to Figure 5 and Figure 6 , Figure 6 for Figure 5 As shown in the locally enlarged view, the first-type contour 202a and the second-type contour edge 202b of the initial graphic 202 are segmented, and a plurality of first-type segments are obtained with the first-type contour edge 202a, and a plurality of second-type segments II are obtained with the second-type contour edge 202b.

[0045] Here, for the convenience of description, Figure 5 and Figure 6 Take one of the initial graphics 202 as an example and perform segmentation.

[0046] In this embodiment, the contour edges of each of the initial graphics 202 are segmented with a preset step length to segment the first type of contour edges 202a and the second type of contour edges 202b. Figure 5 The two adjacent contour edges are split.

[0047] Here, the segmentation method will result in the same segment of the contour edge (such as Figure 5 In the case where the first type of contour edge 202a and the second type of contour edge 202b are shown in the dotted ellipse area, some of the first type of segments or the second type of segments are too short.

[0048] Here, for illustration only, the first-class contour edge 202a includes 17 first-class segments (shorter segments omitted), respectively identified by a1 to a17, and the second-class contour edge 202a includes 14 second-class segments (shorter segments omitted), respectively identified by b1 to b17.

[0049] In another embodiment, the first type of silhouette edge may be segmented with a first step length, and the second type of silhouette edge may be segmented with a second step length, and the second step length may be smaller than or equal to the second step length.

[0050] Here, setting grid points at the junction of the first contour edge and the second contour edge can avoid the situation where the same section of the contour edge belongs to the first type of contour edge and the second type of contour edge. In addition, the second step length can also be made smaller than the second step length to improve the correction accuracy of the second type of contour edge.

[0051] In yet another embodiment, other segmentation methods may also be used, such as adjusting the number of segments and the step size of the segments according to actual needs.

[0052] It should be noted here that a greater number of segments will increase the accuracy of graphic correction, but will also increase the complexity of graphic correction, increase calculation time, and increase the manufacturing cost and complexity of the mask. Segment settings need to be made according to actual needs.

[0053] In this embodiment, at the corner position of the initial graphic 202 (such as Figure 5 A smaller step size can be set.

[0054] Please refer to Figures 7 to 9 , Figure 8 for Figure 7 A partial enlarged schematic diagram of Fig. 9 for Figure 8 , executing step S103, performing several iterative correction processes on the initial graph 202 until the evaluation function of each corrected graph (not shown in the figure) reaches the minimum value, and each iterative correction process includes:

[0055] Execute step S1031 to correct the initial graphic 202 or the corrected graphic obtained in the last iterative correction (not shown in the figure), and obtain a corrected graphic corresponding to the initial graphic 202, wherein the contour edge of the corrected graphic includes a plurality of first-type corrected fragments (not shown in the figure) and a plurality of second-type corrected fragments (not shown in the figure), wherein the first-type corrected fragments correspond to the first-type fragments, and the second-type corrected fragments correspond to the second-type fragments.

[0056] Step S1032 is executed to simulate exposure of the correction pattern to obtain an exposure pattern 203 corresponding to the correction pattern, wherein the exposure pattern 203 includes a target exposure pattern area ii, and the contour edge of the target exposure pattern area ii corresponds to a plurality of the second-type correction segments.

[0057] Here, it should be noted that for the convenience of description, Figure 7 Only the outline edge of the exposure pattern 203 is given.

[0058] In this embodiment, the contour edge of the exposure pattern 203 includes: a plurality of first-category exposure fragments and a plurality of second-category exposure fragments, the first-category exposure fragments correspond to the first-category correction fragments, the second-category exposure fragments correspond to the second-category correction fragments, and a plurality of the second-category exposure fragments constitute the contour edge of the target exposure pattern area ii.

[0059] Specifically, still taking the exposure graphic 203 corresponding to the selected initial graphic 202 as an example, corresponding to the first type of correction fragments and at the same time corresponding to the first type of fragments, the contour edge of the exposure graphic 203 includes 17 first type exposure fragments, which are respectively identified by A1 to A17; corresponding to the second type of correction fragments and at the same time corresponding to the second type of fragments, the contour edge of the exposure graphic 203 includes 14 second type exposure fragments, which are respectively identified by B1 to B17.

[0060] More specifically, the exposure pattern 203 includes a plurality of target exposure pattern areas ii, taking one of the target exposure pattern areas ii as an example (eg Fig. 9 As shown), the second type of exposure fragments B1, B2, B3, B12, B13 and B14 constitute the contour edge of the target exposure pattern area ii.

[0061] Execute step S1033 to determine the evaluation function of the correction pattern in the current iterative correction process based on the first edge placement error corresponding to each of the first-type correction segments of the correction pattern, the second edge placement error corresponding to each of the second-type correction segments, and the size change of the target exposure pattern area ii in the first direction X.

[0062] In this embodiment, the evaluation function of the correction pattern in the current iterative correction process is determined according to the first edge placement error corresponding to each first-type correction segment of the correction pattern, the second edge placement error corresponding to each second-type correction segment, and the size change of the target exposure pattern area ii corresponding to the correction pattern in the first direction X. Please refer to Figure 3 , including the following steps:

[0063] Step S10331, obtaining a first edge placement error corresponding to each of the first-type corrected segments;

[0064] Step S10332, obtaining a second edge placement error corresponding to each of the second-type corrected segments;

[0065] Step S10333, obtaining the difference between the maximum size and the minimum size of the target exposure pattern area ii at the second type exposure segment position corresponding to each second type correction segment in the first direction X, so as to represent the size change of the target exposure pattern area ii corresponding to the second type correction segment in the first direction X;

[0066] Step S10334, according to a number of the first edge placement errors, a number of the second edge placement errors, and a number of the size changes, the evaluation function of the corrected graph is obtained as follows:

[0067]

[0068] Among them, EPE 1,m is the first edge placement error corresponding to the mth first-type correction segment, EPE 2,n is the second edge placement error corresponding to the nth second type correction segment, CDV n is the size change of the target exposure pattern area ii corresponding to the nth second-type correction segment in the first direction X, M is the number of the first-type correction segments in the correction pattern, and N is the number of the second-type correction segments in the correction pattern.

[0069] In this embodiment, the method for obtaining the first edge placement error corresponding to each first-type corrected segment includes: obtaining the first edge placement error according to the position offset degree of the first-type exposed segment relative to the first-type segment.

[0070] Continuing to take the selection of the initial graphic 202 as an example, M=17, and the value range of m is 1 to 17.

[0071] Taking the first type of fragment a2 as an example, EPE 1,2 is a first edge placement error corresponding to the second first-type correction segment, which is obtained according to the position offset degree of the first-type exposure segment A2 relative to the first-type segment a2.

[0072] In this embodiment, the method for obtaining the second edge placement error corresponding to each second-type corrected segment includes: obtaining the second edge placement error according to the position offset degree of the second-type exposed segment relative to the second-type segment II.

[0073] Continuing to take the selection of the initial graphic 202 as an example, N=14, and the value range of n is 1 to 14.

[0074] Taking the second type of fragment b2 as an example, EPE 2,2 is the second edge placement error EPE corresponding to the second type of the second correction segment 2,2 , obtained according to the position offset degree of the second type exposure fragment B2 relative to the second type fragment b2.

[0075] Taking the second type segment b2 as an example, CDV2 is the size change of the target exposure graphic area ii corresponding to the second second type correction segment in the first direction X, that is, the difference between the maximum size d2 and the minimum size d1 of the target exposure graphic area ii at the corresponding second type exposure segment B2 in the first direction X.

[0076] Here, it should be noted that since the second type of segment b2 and the second type of segment b13 are symmetrically arranged, CDV2 and CDV13 are the same size.

[0077] Step S1034 is executed to determine whether to enter the next iterative correction process according to the evaluation function of the correction graph in the current iterative correction process.

[0078] The determination of whether to enter the next iterative correction process is based on the evaluation function of each corrected graphic in the initial layout obtained in the current iterative correction process, including: providing a preset value; if the evaluation functions of all the corrected graphics in the initial layout are less than or equal to the preset value, stopping the iterative correction process, otherwise, entering the next iterative correction process.

[0079] At this point, after several iterations of correction processing, the evaluation functions of all the corrected graphics in the initial layout are less than or equal to the preset value, thereby completing the correction of the initial graphics.

[0080] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A graphics correction method, characterized in that: include: Providing an initial layout, the initial layout comprising a reference pattern and a plurality of initial patterns, the reference pattern extending along a first direction, the plurality of initial patterns extending along a second direction, the first direction and the second direction being perpendicular to each other, the initial pattern spanning the reference pattern along the second direction and partially overlapping with the reference pattern, the initial pattern having a first type of contour edge that does not overlap with the reference pattern, and a second type of contour edge that overlaps with the reference pattern; Segmenting the first-type contour edges and the second-type contour edges of the initial graphic, obtaining a plurality of first-type segments using the first-type contour edges, and obtaining a plurality of second-type segments using the second-type contour edges; The initial graph is subjected to several iterative correction processes until the evaluation function of each corrected graph obtained reaches a minimum value, and each iterative correction process includes: Correcting the initial figure or the corrected figure obtained in the last iterative correction to obtain a corrected figure corresponding to the initial figure, wherein the contour edge of the corrected figure includes a plurality of first-type corrected segments and a plurality of second-type corrected segments, wherein the first-type corrected segments correspond to the first-type segments, and the second-type corrected segments correspond to the second-type segments; Performing simulated exposure on the correction pattern to obtain an exposure pattern corresponding to the correction pattern, wherein the exposure pattern includes a target exposure pattern area, and the contour edge of the target exposure pattern area corresponds to a plurality of the second-type correction segments; Determine the evaluation function of the correction pattern in the current iterative correction process according to the first edge placement errors corresponding to the first-type correction segments of the correction pattern, the second edge placement errors corresponding to the second-type correction segments of the correction pattern, and the size change of the target exposure pattern area in the first direction; Whether to enter the next iterative correction process is determined based on the evaluation function of the correction graph in the current iterative correction process.

2. The image correction method according to claim 1, characterized in that: The contour edge of the exposure pattern includes: a plurality of first-type exposure fragments and a plurality of second-type exposure fragments, the first-type exposure fragments correspond to the first-type correction fragments, the second-type exposure fragments correspond to the second-type correction fragments, and the plurality of second-type exposure fragments constitute the contour edge of the target exposure pattern area.

3. The image correction method according to claim 2, characterized in that: Determining the evaluation function of the correction pattern in the current iterative correction process according to the first edge placement errors corresponding to each of the first-type correction segments of the correction pattern, the second edge placement errors corresponding to each of the second-type correction segments, and the size change in the first direction of the target exposure pattern area corresponding to the correction pattern, includes: obtaining the first edge placement errors corresponding to each of the first-type correction segments; obtaining the second edge placement errors corresponding to each of the second-type correction segments; obtaining the difference between the maximum size and the minimum size of the target exposure pattern area at the second-type exposure segment position corresponding to each of the second-type correction segments in the first direction as the size change in the first direction of the target exposure pattern area corresponding to the second-type correction segment; obtaining the evaluation function of the correction pattern according to a number of the first edge placement errors, a number of the second edge placement errors, and a number of the size changes as follows: Among them, EPE 1,m is the first edge placement error corresponding to the mth first-type correction segment, EPE 2,n is the second edge placement error corresponding to the nth second type correction segment, CDV n is the size change of the target exposure pattern area corresponding to the nth second-type correction segment in the first direction, M is the number of the first-type correction segments in the correction pattern, and N is the number of the second-type correction segments in the correction pattern.

4. The image correction method according to claim 3, characterized in that: The method for obtaining the first edge placement error corresponding to each first-type corrected segment includes: obtaining the first edge placement error according to the position offset degree of the first-type exposed segment relative to the first-type segment.

5. The image correction method according to claim 3, characterized in that: The method for obtaining the second edge placement error corresponding to each of the second-type corrected segments includes: obtaining the second edge placement error according to the position offset degree of the second-type exposed segments relative to the second-type segments.

6. The image correction method according to claim 1, characterized in that: The segmenting of the first-type contour edges and the second-type contour edges of each of the initial graphics includes: segmenting the contour edges of each of the initial graphics with a preset step length to segment the first-type contour edges and the second-type contour edges.

7. The image correction method according to claim 1, characterized in that: The segmenting of the first type of contour edges and the second type of contour edges of each of the initial figures includes: segmenting the first type of contour edges with a first step length, and segmenting the second type of contour edges with a second step length, wherein the second step length is less than or equal to the second step length.

8. The image correction method according to claim 1, characterized in that: The determination of whether to enter the next iterative correction process is based on the evaluation function of each corrected graphic in the initial layout obtained in the current iterative correction process, including: providing a preset value; if the evaluation functions of all the corrected graphics in the initial layout are less than or equal to the preset value, stopping the iterative correction process, otherwise, entering the next iterative correction process.

9. The image correction method according to claim 1, characterized in that: The reference pattern includes an active area pattern, and the initial patterns include gate patterns.

10. The image correction method according to claim 1, characterized in that: Also includes: A correction layout is formed by a plurality of the correction patterns.

11. The image correction method according to claim 1, characterized in that: A plurality of the initial patterns are also arranged along the first direction.

Images