Substrate processing system

Abstract

The invention provides a substrate processing system provided with a batch-type module and a monolithic module, wherein the substrate processing system can cope with various requirements related to the orientation of a substrate. The substrate processing system is provided with a rotation adjustment mechanism (SRM) of a rotary table capable of adjusting the position of a notch in a substrate (W) at a carrying-in position (IP) side or a carrying-out position (OP). The direction of the substrate (W) discharged to the single-chip processing device (2) by the relay device (6) can be arbitrarily changed by the rotation adjustment mechanism (SRM). According to the present invention, it is possible to provide a substrate processing system capable of coping with various requirements relating to the orientation of a substrate (W).

Description

Technical Field

[0001] The present invention relates to a substrate processing system for performing predetermined processing on various substrates such as semiconductor substrates, FPD (Flat Panel Display) substrates for liquid crystal displays or organic EL (Electroluminescence) display devices, mask glass substrates, and optical disk substrates. Background Art

[0002] In the past, such devices include devices with batch modules and single-chip modules (for example, refer to Patent Document 1). The batch module performs a predetermined process on multiple substrates in a unified manner. The single-chip module performs a predetermined process on each substrate. The batch module and the single-chip module each have inherent advantages. The substrate processing device with the batch module and the single-chip module has the advantages of both, thereby realizing a configuration that is more advantageous than the batch substrate processing device or the single-chip substrate processing device.

[0003] According to the configuration of Patent Document 1, a plurality of substrates are uniformly immersed in a batch processing tank. The substrates that have completed the batch processing are transported piece by piece to a single-wafer processing unit. In this way, according to the conventional configuration, a plurality of substrates contained in a carrier are transported and returned to the carrier in the same transporting style. The orientations of the plurality of substrates contained in the carrier are consistent in that the arrangement of the devices formed on the substrates is oriented in a common direction. In the conventional substrate processing apparatus, if substrate processing is performed on a plurality of substrates having a uniform orientation in a carrier, the substrate processing is performed while maintaining the uniformity of the substrate orientation, and the plurality of substrates are returned to the carrier in a uniform orientation.

[0004] [Background Technology Literature]

[0005] [Patent Document]

[0006] [Patent Document 1]

[0007] Japanese Patent Publication No. 2021-64654 Summary of the invention

[0008] [Problems to be solved by the invention]

[0009] However, the above configuration cannot achieve all the requirements pursued by the substrate processing device. Indeed, in the previous configuration, since all substrates are transported in the same transport mode during the substrate processing process, the substrates are discharged from the carrier with the same orientation, and the substrates are stored in the carrier again after the substrate processing is completed. However, if different transport modes are used according to the substrates in the substrate processing device, the orientation of the substrates stored in the carrier after the substrate processing is completed will be inconsistent. In this way, if the orientation of the substrates stored in the carrier after the substrate processing is completed is inconsistent, there is a concern that problems may occur in subsequent steps.

[0010] The present invention has been made in view of such a situation, and provides a substrate processing system including a batch module and a single-wafer module, which can cope with various requirements related to the orientation of a substrate.

[0011] [Technical means to solve the problem]

[0012] The present invention adopts the following configuration in order to solve the above-mentioned problems.

[0013] That is, the present invention provides a substrate processing system, characterized in that the substrate processing system continuously performs batch processing of processing multiple substrates in a unified manner and single-wafer processing of processing substrates one by one, and is equipped with: a batch processing device for performing batch processing; at least one single-wafer processing device for performing single-wafer processing on substrates that have been processed in batches; and at least one relay device, which specifies two positions, namely, an import position for receiving substrates that have been processed in batches from the batch processing device and an export position for transferring the substrates received at the import position to the single-wafer processing device; and the batch processing device has a function of being able to uniformly process multiple substrates in a vertical position. At least one batch processing tank for performing immersion treatment, the single-wafer processing device is equipped with multiple single-wafer processing chambers that can dry horizontal substrates piece by piece; the relay device is equipped with: a posture conversion mechanism, which can convert multiple substrates from a vertical posture to a horizontal posture on the side of the carry-in position; a relay conveying mechanism, which is arranged between the carry-in position and the carry-out position and can convey the horizontal substrates piece by piece along the substrate conveying path to the carry-out position; and a rotation adjustment mechanism, which is equipped with a rotating table that can adjust the position of the notch of the substrate by rotating the horizontal substrates piece by piece at the carry-in position side or the carry-out position.

[0014] [Function and Effect] According to the invention, in a substrate processing system in which a batch processing device and a single-wafer processing device are connected by a relay device, the requirements pursued by the substrate processing system can be achieved. The relay device of the present invention has a rotation adjustment mechanism, and the rotation adjustment mechanism has a rotating table that can adjust the position of the notch of the substrate at the side of the carry-in position where the relay device obtains the substrate or the carry-out position where the relay device discharges the substrate. The orientation of the substrate discharged from the relay device to the single-wafer processing device can be arbitrarily changed by the rotation adjustment mechanism. By changing the action of the rotation adjustment mechanism, the orientation of the batch-processed substrates transferred to the single-wafer processing device can be made consistent in a specified direction.

[0015] In addition, in the substrate processing system, it is more preferred that the batch processing device includes a substrate holding mechanism, which supports a first substrate group in a vertical posture and a second substrate group in a vertical posture, and supports a batch in which the first substrate and the second substrate are combined in a manner that the device surface of the first substrate constituting the first substrate group and the device surface of the second substrate constituting the second substrate group face each other; the relay device includes a substrate group distinguishing mechanism that can distinguish the batch into the first substrate and the second substrate; the posture conversion mechanism uniformly converts the distinguished first substrate and the second substrate from a vertical posture to a horizontal posture, and when the orientation of the recess of the first substrate converted to the horizontal posture by the posture conversion mechanism is different from the orientation of the recess of the second substrate, the rotation adjustment mechanism rotates the second substrate at an angle different from the rotation angle of the first substrate, so that the orientation of the recess of the first substrate is consistent with the orientation of the recess of the second substrate.

[0016] [Function and effect] According to this structure, it is possible to provide a substrate processing system that can make the orientation of the substrates consistent in a predetermined direction even when the substrates are arranged face to face to form a batch. If two substrate groups are combined and arranged in a manner that the device surface of the first substrate and the device surface of the second substrate face each other, a batch in which the first substrate and the second substrate are arranged alternately is formed. Thereafter, if the batch is divided into the first substrate and the second substrate, a situation occurs in which the orientation of the notch in the first substrate and the orientation of the notch in the second substrate are different from each other. According to the structure, the substrates are rotated by making the rotation angle of the first substrate and the rotation angle of the second substrate different from each other through the rotation adjustment mechanism, so that the orientation of the notch in the first substrate and the orientation of the notch in the second substrate can be consistent.

[0017] In addition, in the substrate processing system, it is preferred that the rotation adjustment mechanism has a substrate lifting mechanism that can lift and lower the substrate between a first position at an upper part and a second position at a lower part, and the substrate lifting mechanism raises the substrate held by the relay transport mechanism to the first position at a position between the first position and the second position, that is, at an intermediate position, and receives the substrate from the relay transport mechanism, and places the received substrate on the turntable by lowering it to the second position.

[0018] [Function and Effect] According to this structure, the substrate can be moved up and down between the upper first position, the middle position, and the lower second position, and the substrate can be received, rotated, and discharged. According to this structure, the structure of the rotation adjustment mechanism can be further simplified.

[0019] Furthermore, in the substrate processing system, it is preferable that the rotation adjustment mechanism includes a substrate shifting mechanism that shifts the substrate so that the center of the substrate located at the first position coincides with the rotation center of the turntable.

[0020] [Function and Effect] According to this structure, the substrate at the first position is shifted in such a way that the center thereof coincides with the center position of the rotating table. With this structure, the orientation of the substrate can be surely set to a predetermined orientation, and by placing the substrate at an ideal position, the substrate can be more surely transported by the single-wafer transport mechanism.

[0021] Furthermore, in the substrate processing system, preferably, the substrate lifting mechanism has a plurality of support pins that appear and disappear synchronously and are disposed at positions avoiding a plurality of extensions extending from a rotation center of the turntable located at an initial position.

[0022] [Function and Effect] According to this structure, the substrate lifting mechanism has a plurality of support pins that appear and disappear synchronously, and is arranged at a position away from a plurality of extensions extending from the rotation center of the rotation table located at the initial position. By setting it as this structure, it is possible to surely form a rotation adjustment mechanism having two parts, the substrate lifting mechanism and the mechanism for rotating the substrate.

[0023] Furthermore, in the substrate processing system, it is more preferable that the rotation adjustment mechanism includes a pure water supply mechanism for supplying pure water to the received substrate.

[0024] [Function and Effect] According to this configuration, since the rotation adjustment mechanism includes a pure water supply mechanism for supplying pure water to the received substrate, the substrate will not dry out during the operation of the rotation adjustment mechanism.

[0025] Furthermore, in the substrate processing system, it is preferable that the rotation adjustment mechanism includes a sensor that detects a position of a notch of the substrate on the turntable.

[0026] [Function and Effect] According to this configuration, since the rotation adjustment mechanism includes a sensor for detecting the position of the notch of the substrate on the rotation stage, it is possible to measure and correct minute deviations in orientation that are visible between substrates.

[0027] [Effects of the Invention]

[0028] According to the present invention, it is possible to provide a substrate processing system including a batch module and a single-wafer module, which can cope with various requirements regarding the orientation of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a plan view for explaining the overall structure of the substrate processing system according to the embodiment.

[0030] Figure 2 It is a plan view for explaining the overall structure of the batch processing apparatus according to the embodiment.

[0031] Figure 3 It is a schematic diagram for explaining the structure of the HVC posture conversion unit of the embodiment.

[0032] Figure 4 (a) to (f) are schematic diagrams for explaining the structure of the first posture conversion mechanism of the embodiment.

[0033] Figure 5A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0034] Figure 5B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0035] Fig. 6A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0036] Figure 6B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0037] Figure 6C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0038] Fig. 7A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0039] Figure 7B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0040] Figure 7C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0041] Fig. 8A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0042] Figure 8B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0043] Fig.9A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0044] Fig. 9B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0045] Fig. 9C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0046] Fig. 10A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0047] Fig. 10B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0048] Fig. 10C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0049] Fig.11A It is a schematic diagram for explaining the operation of the relay device according to the embodiment. Fig. 11B It is a schematic diagram for explaining the operation of the relay device according to the embodiment. Fig. 11C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0050] Fig.11D It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0051] Fig. 12A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0052] Fig. 12B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0053] Fig. 12C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0054] Fig.12D It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0055] Fig.13A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0056] Fig. 13B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0057] Fig. 13C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0058] Fig.14A It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0059] Fig. 14B It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0060] Fig. 14C It is a schematic diagram for explaining the operation of the relay device according to the embodiment.

[0061] Fig.15 FIG. 1 is a schematic diagram illustrating transition of the notch position of the substrate according to the embodiment.

[0062] Fig.16 FIG. 1 is a schematic diagram illustrating transition of the notch position of the substrate according to the embodiment.

[0063] Fig.17 It is a schematic diagram for explaining the structure of the rotation adjustment mechanism of the embodiment. Fig.18A It is a schematic diagram for explaining the structure of the rotation adjustment mechanism of the embodiment.

[0064] Fig.18B It is a schematic diagram for explaining the structure of the rotation adjustment mechanism of the embodiment.

[0065] Fig.19 This is a flowchart for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0066] Fig. 20A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0067] Fig. 20B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0068] Fig.21A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0069] Fig.21B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0070] Fig.22A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0071] Fig. 22B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0072] Fig.23A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0073] Fig. 23B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0074] Fig.24AIt is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0075] Fig. 24B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0076] Fig.25A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0077] Fig.25B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0078] Fig.26A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0079] Fig.26B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0080] Fig.27A It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0081] Fig.27B It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0082] Fig.28 It is a schematic diagram for explaining the operation of the rotation adjustment mechanism of the embodiment.

[0083] Fig.29 It is a plan view for explaining the structure of the single-wafer processing device according to the embodiment.

[0084] Fig.30 This is a flowchart for explaining substrate transfer according to the embodiment.

[0085] Fig.31 It is a schematic diagram for explaining the substrate transfer in the embodiment.

[0086] Fig.32 It is a schematic diagram for explaining the substrate transfer in the embodiment.

[0087] Fig.33 It is a schematic diagram for explaining a variation of the present invention. DETAILED DESCRIPTION

[0088] The following describes an embodiment of the present invention with reference to the accompanying drawings. The substrate processing system of the present invention is a substrate processing system that continuously performs batch processing for processing a plurality of substrates W at once and single processing for processing substrates W one by one, and is a structure in which a batch processing device for batch processing and a single processing device for single processing are connected via a relay device.

[0089] The substrate processing system of the present invention performs various processes such as liquid treatment, cleaning treatment, and drying treatment on the substrate W. The substrate processing system adopts a batch processing method for processing a plurality of substrates W at once and a single-wafer processing method for processing substrates W one by one (so-called hybrid method). The batch processing method is a processing method for processing a plurality of substrates W arranged in a vertical posture at once. The single-wafer processing method is a processing method for processing substrates W in a horizontal posture one by one. The substrate processing system of the present invention continuously performs batch processing for processing a plurality of substrates at once and single-wafer processing for processing substrates one by one.

[0090] [Example]

[0091] <1. Overall composition>

[0092] Substrate handling systems such as Figure 1 As shown, there are a batch processing apparatus 1 and a single-wafer processing apparatus 2 of separate structures, and a relay device 6 connecting the two apparatuses 1 and 2. The batch processing apparatus 1 is related to batch processing for processing a plurality of substrates at once, and the single-wafer processing apparatus 2 is related to single-wafer processing for processing substrates one by one. The relay device 6 is a structure for transferring the batch-processed substrates from the batch processing apparatus 1 to the single-wafer processing apparatus 2, and is a bridge structure provided at a position interposed between the batch processing apparatus 1 and the single-wafer processing apparatus 2.

[0093] Batch processing device 1, single chip processing device 2 Figure 1 That is, the batch processing device 1 includes a stocker block 3 , a transfer block 5 adjacent to the stocker block 3 , and a batch processing block 7 adjacent to the transfer block 5 . Figure 2 The specific structure of the batch processing block 7 of the batch processing apparatus 1 is shown. On the other hand, the single wafer processing apparatus 2 includes a carrier block 4 and a single wafer processing block 8 adjacent to the carrier block 4.

[0094] The batch processing apparatus 1 is configured to perform batch processing, and has a first housing 1A for accommodating the blocks constituting the batch processing apparatus 1. The single-wafer processing apparatus 2 is configured to perform single-wafer processing on the substrates W processed in batch, and has a second housing 2A for accommodating the blocks constituting the single-wafer processing apparatus 2. The first housing 1A has a first loading port 9 protruding from a first wall surface orthogonal to the Y direction from the batch processing apparatus 7 toward the transfer block 5 among the walls constituting the first housing. The second housing 2A has a second loading port 10 protruding from a second wall surface orthogonal to the Y direction among the walls constituting the second housing 2A, and the second loading port 10 is located at the same position as the first loading port 9 in the Y direction. The second loading port 10 can load the carrier C.

[0095] In this specification, for convenience, the direction in which the stacker block 3, the transfer block 5, and the batch processing block 7 of the batch processing device 1 are arranged is referred to as the "front-rear direction X". The front-rear direction X is also the direction in which the carrier block 4 and the single-wafer processing block 8 of the single-wafer processing device 2 are arranged. The front-rear direction X extends horizontally. In the front-rear direction X, the direction from the transfer block 5 of the batch processing device 1 toward the stacker block 3 is referred to as the "front". The front is also the direction from the single-wafer processing block 8 of the single-wafer processing device 2 toward the transfer block 4. The direction on the opposite side of the front is referred to as the "rear". The horizontally extending direction perpendicular to the front-rear direction X is referred to as the "width direction Y". For convenience, one direction of the "width direction Y" is referred to as the "right", and for convenience, the other direction is referred to as the "left". For convenience, the direction (height direction) perpendicular to the front-rear direction X and the width direction Y is referred to as the "vertical direction Z". In each figure, for reference, front, rear, right, left, top, and bottom are appropriately indicated.

[0096] The substrate processing system of the present invention first performs batch processing on substrates W by using a batch processing device 1, and then transfers the batch-processed substrates W to a single-wafer processing device 2 through a relay device 6. Then, the single-wafer processing device 2 performs single-wafer processing on the substrates W, thereby completing all the processes of substrate processing. Hereinafter, according to the flow of substrates W in the substrate processing system of the present invention, the specific configuration of each device is described in the order of the batch processing device 1, the relay device 6, and the single-wafer processing device 2.

[0097] <2. Batch processing device: stacker block>

[0098] The stocker block 3 includes a first loading port 9 as an entrance for loading a carrier C containing a plurality of substrates W in a horizontal position at predetermined intervals in the vertical direction. The first loading port 9 is a structure protruding from an outer wall of the stocker block 3 extending in the width direction (Y direction).

[0099] Multiple (for example, 25) substrates W are stacked and stored in a carrier C in a horizontal position with fixed intervals. The carrier C storing the unprocessed substrates W brought into the batch processing device 1 is first placed on the first loading port 9. The carrier C forms a plurality of grooves (not shown) extending in the horizontal direction for storing the substrates W in a state where the surfaces are separated from each other. Substrates W are inserted into each of the grooves one by one. As the carrier C, there is, for example, a closed FOPU (Front Opening Unified Pod). In the present invention, an open container can also be used as the carrier C.

[0100] The internal structure of the stocker block 3 is described. The stocker block 3 includes a transport and storage unit ACB for storing and managing carriers C. The transport and storage unit ACB includes a carrier transport mechanism 11 for transporting carriers C and a rack 13 for placing carriers C. The number of carriers C that can be stored in the stocker block 3 is one or more.

[0101] The stocker block 3 includes a plurality of racks 13 for mounting carriers C. The racks 13 are provided on a partition separating the stocker block 3 from the transfer block 5. The racks 13 include a storage rack 13b for temporarily mounting carriers C and a substrate removal carrier mounting rack 13a for receiving and receiving the first substrate transport mechanism HTR of the transfer block 5.

[0102] The carrier carrier 13a is a structure for mounting a carrier that stores a plurality of substrates in a horizontal position at predetermined intervals in the vertical direction. The carrier carrier 13a is a structure for mounting a carrier C for taking out a substrate W. In the present embodiment, one carrier carrier 13a is provided, but a plurality of carrier carriers 13a may be provided. The carrier transport mechanism 11 takes in a carrier C storing an unprocessed substrate W from the first loading port 9 and places it on the carrier carrier 13a for substrate taking out. At this time, the carrier transport mechanism 11 may temporarily place the carrier C on the storage rack 13b before placing it on the carrier carrier 13a. The number of carrier carriers 13a provided in the stocker block 3 is one or more.

[0103] <3. Batch processing device: transfer block>

[0104] The transfer block 5 is adjacent to the carrier mounting rack 13a. The transfer block 5 is arranged adjacent to the rear of the stocker block 3. The transfer block 5 includes: a first substrate transport mechanism HTR that can receive the carrier C mounted on the substrate removal carrier mounting rack 13a; an HVC posture conversion unit 23 and a push rod mechanism 25 that convert a plurality of substrates W from a horizontal posture to a vertical posture. The HVC posture conversion unit 23 constitutes the first posture conversion mechanism 15. The first posture conversion mechanism 15 converts a plurality of substrates W taken out from the carrier C from a horizontal posture to a vertical posture. In addition, a substrate transfer position PP is set for the transfer block 5 to transfer a plurality of substrates W to the second substrate transport mechanism WTR provided in the transport region R2. The first substrate transport mechanism HTR, the HVC posture conversion unit 23, and the push rod mechanism 25 are arranged in sequence in the Y direction.

[0105] The first substrate transport mechanism HTR is configured to collectively take out a plurality of substrates W from a carrier C mounted on a carrier mounting rack 13a. The first substrate transport mechanism HTR is disposed on the right side of the rear of the transport storage section ACB of the stacker block 3. The first substrate transport mechanism HTR is a mechanism for collectively taking out a plurality of substrates W from a carrier C mounted on a substrate taking-out / storing carrier mounting rack 13a. The first substrate transport mechanism HTR includes a plurality of (e.g., 25) hands 51 for collectively transporting a plurality of substrates W. One hand 51 supports one substrate W. The first substrate transport mechanism HTR collectively takes out a plurality of (e.g., 25) substrates W from a carrier C mounted on a carrier mounting rack 13a of the stacker block 3. Furthermore, the first substrate transport mechanism HTR can transport the held plurality of substrates W to the support table 23A of the HVC posture conversion unit 23. The HVC posture conversion unit 23 converts the received plurality of substrates W in a horizontal posture into a vertical posture. The pusher mechanism 25 is configured to hold the plurality of substrates W in a vertical position and to move the substrates up, down, left, and right.

[0106] Figure 3 The HVC posture conversion unit 23 of Example 1 is described. The HVC posture conversion unit 23 includes a pair of horizontal holding units 23B and a pair of vertical holding units 23C extending in the longitudinal direction (Z direction). The support platform 23A has a support surface extending in the XY plane for supporting the horizontal holding unit 23B and the vertical holding unit 23C. The rotation drive mechanism 23D is configured to rotate the horizontal holding unit 23B and the vertical holding unit 23C together with the support platform 23A by 90°. Through the rotation, the horizontal holding unit 23B and the vertical holding unit 23C become a structure extending in the left-right direction (Y direction). In addition, Figure 4 23 is a schematic diagram for explaining the operation of the HVC posture conversion unit 23. Figure 3 and Figure 4 , while explaining the composition of each part.

[0107] The horizontal holding portion 23B supports the plurality of substrates W in a horizontal posture from the lower side. That is, the horizontal holding portion 23B has a comb-shaped structure having a plurality of protrusions corresponding to the substrates W to be supported. Between the protrusions adjacent to each other, there is an elongated recessed portion in which the peripheral portion of the substrate W is located. When the peripheral portion of the substrate W is inserted into the recessed portion, the lower surface of the substrate W in a horizontal posture contacts the upper surface of the protrusion, and the substrate W is supported in a horizontal posture.

[0108] The vertical holding part 23C supports a plurality of substrates W in a vertical posture from the lower side. That is, the vertical holding part 23C has a comb-shaped structure having a plurality of protrusions corresponding to the substrates W to be supported. Between the adjacent protrusions, there is an elongated V-shaped groove where the peripheral portion of the substrate W is located. When the peripheral portion of the substrate W is inserted into the V-shaped groove, the substrate W is clamped by the V-shaped groove and supported in a vertical posture. Since two vertical holding parts 23C are provided on the support table 23A, each of the two locations of the peripheral portion of the substrate W is clamped by different V-shaped grooves.

[0109] A pair of horizontal holding parts 23B and a pair of vertical holding parts 23C extending in the longitudinal direction (Z direction) are arranged along an imaginary circle corresponding to the substrate W in a horizontal posture so as to surround the substrate W to be held. The pair of horizontal holding parts 23B are separated by the diameter of the substrate W, and hold one end of the substrate W and the other end corresponding to the position farthest from the one end. In this way, the pair of horizontal holding parts 23B support the substrate W in a horizontal posture. On the other hand, the pair of vertical holding parts 23C are separated by a distance shorter than the diameter of the substrate W, and support a specified part of the substrate W and a specific part located near the specified part. In this way, the pair of vertical holding parts 23C support the substrate W in a vertical posture. The pair of horizontal holding parts 23B are located at the same position in the left-right direction (Y direction), and the pair of vertical holding parts 23C are located at the same position in the left-right direction (Y direction). The pair of vertical holding parts 23C are arranged on the side of the direction (left direction) in which the support table 23A rotates and tilts than the pair of horizontal holding parts 23B.

[0110] The rotation drive mechanism 23D supports the support table 23A so that it can rotate at least 90° around the horizontal axis AX2 extending in the front-rear direction (X direction). If the support table 23A in the horizontal state is rotated 90°, the support table 23A becomes vertical, and the posture of the plurality of substrates W held by the horizontal holding portion 23B and the vertical holding portion 23C is changed from the horizontal posture to the vertical posture.

[0111] like Figure 4As shown in (f) in FIG. 1 , the push rod mechanism 25 includes: a push rod 25A capable of carrying a substrate W in a vertical posture; an elevating and rotating part 25B for rotating and elevating the push rod 25A; a horizontal moving part 25C for moving the elevating and rotating part 25B in the left-right direction (Y direction); and a rail 25D extending in the left-right direction (Y direction) for guiding the horizontal moving part 25C. The push rod 25A is a structure that supports the lower part of each of a plurality of substrates W (e.g., 50) in a vertical posture. The elevating and rotating part 25B is a structure that is provided below the push rod 25A and has a retractable mechanism that allows the push rod 25A to be raised and lowered in the vertical direction. In addition, the elevating and rotating part 25B can also rotate the push rod 25A at least 180° around the vertical axis. The horizontal moving part 25C is a structure that supports the elevating and rotating part 25B and allows the push rod 25A and the elevating and rotating part 25B to move horizontally. The horizontal moving section 25C is guided by the rail 25D and can move the push rod 25A from the pickup position close to the HVC posture conversion section 23 to the substrate delivery position PP. In addition, the horizontal moving section 25C can also shift the substrate W in the vertical posture in the push rod 25A by a distance corresponding to a half pitch in the arrangement direction of the substrate W.

[0112] Here, the operation of the HVC posture conversion unit 23 and the push rod mechanism 25 is described. The HVC posture conversion unit 23 and the push rod mechanism 25 arrange, for example, a total of 50 substrates W accommodated in two carriers C in a face-to-face manner with a predetermined interval (for example, 5 mm). The 25 substrates W in the first carrier C are described as the first substrate W1 belonging to the first substrate group. Similarly, the 25 substrates W in the second carrier C are described as the second substrate W2 belonging to the second substrate group. In addition, Figure 4 (a)~ Figure 4 In (f), for the convenience of drawing, the number of first substrates W1 is 3 and the number of second substrates W2 is 3.

[0113] Figure 4 (a) in the figure shows the state where the first substrate W1, which will be in a horizontal posture, is uniformly transferred to the HVC posture conversion unit 23 by the first substrate transport mechanism HTR. At this time, the device surface (circuit pattern formation surface) of the first substrate W1 faces upward. 25 pieces of the first substrate W1 are arranged at a predetermined interval (for example, 10 mm). The 10 mm interval is called the full pitch (standard pitch). The first substrate W1 in the above state is held by the horizontal holding unit 23B. In addition, the push rod 25A at this time is located at a pickup position below the support table 23A.

[0114] Figure 4(b) shows a state when the support table 23A of the HVC posture conversion unit 23 is rotated 90 degrees by the rotation drive mechanism 23D. In this way, the posture of the 25 first substrates W1 in the HVC posture conversion unit 23 is converted from a horizontal posture to a vertical posture. The first substrates W1 in this state are held by the vertical holding unit 23C.

[0115] The pusher mechanism 25 supports the substrate group in the vertical posture into which the first substrate W1 accommodated in the first carrier C1 is posture-converted by the first posture conversion mechanism 15 . Figure 4 (c) in FIG. 2 shows a state where the push rod 25A rises from the pickup position and moves to a position set just above the pickup position. The rising movement is performed by the lifting and rotating part 25B. In this way, if the push rod 25A moves from the lower side of the first substrate W1 to the upper side, the first substrate W1 supported by the vertical holding part 23C of the HVC posture conversion part 23 is pulled out from the vertical holding part 23C and moved onto the push rod 25A. Grooves for clamping the substrate W are provided on the upper surface of the push rod 25A. The first substrate W1 is supported in these grooves arranged at equal intervals. The grooves are arranged at half pitch, and because the first substrate W1 is arranged at full pitch in the HVC posture conversion part 23, the grooves for clamping the first substrate W1 and the empty grooves that do not support the substrate W are arranged alternately on the upper surface of the push rod 25A located at the just above position.

[0116] Figure 4 (d) in FIG. 1 shows the action of the push rod 25A rotating 180° by the lifting and rotating section 25B and the action of the support table 23A of the HVC posture conversion section 23 rotating 90° in the opposite direction by the rotation driving mechanism 23D. The HVC posture conversion section 23 in the above state can support the second substrate W2. If the push rod 25A rotates 180°, the substrate W supported by the right end of the push rod 25A moves to the left end of the push rod 25A, and the empty groove located at the left end of the push rod 25A moves to the right end of the push rod 25A. Since the positional relationship between the HVC posture conversion section 23 and the push rod 25A is set in such a way that the substrate W located at the right end of the HVC posture conversion section 23 is transferred to the right end of the push rod 25A, the HVC posture conversion section 23 can transfer the second substrate W2 at the right end to the groove at the right end of the push rod 25A regardless of whether there is the first substrate W1 supported by the push rod 25A. This is also true for the other second substrates W2 supported on the HVC posture conversion unit 23. That is, the second substrates W2 arranged at intervals with full pitches on the HVC posture conversion unit 23 can be arranged at intervals with full pitches in sequence from the right end of the push rod 25A. This is because, in the rotated push rod 25A, empty grooves are arranged at intervals with full pitches starting from the right end. At this time, the first substrate W1 on the push rod 25A is accommodated in the gap between the second substrates W2 arranged on the push rod 25A. Figure 4(d) in FIG. 1 shows a state where the second substrate W2 has been transported to the HVC posture conversion unit 23. Figure 4 In (d), the second substrate W2 is supported by the horizontal holding portion 23B.

[0117] If in Figure 4 In the state (d) in FIG. 1 , the push rod 25A located at the upper position returns to the original pickup position, and the HVC posture conversion unit 23 can rotate the support platform 23A by 90° again.

[0118] Figure 4 (e) in FIG. 2 shows the situation when the support table 23A actually rotates again. At this time, since the push rod 25A rotates only 180°, if Figure 4 As shown in (f) in the figure, the push rod 25A is moved to the upper position again, so that the second substrate W2 does not interfere with the first substrate W1, but is accommodated in the empty groove sandwiched between the first substrates W1 on the upper surface of the push rod 25A. In this way, a batch of the first substrates W1 and the second substrates W2 are alternately arranged. In addition, Figure 4 In (e), the second substrate W2 is supported by the vertical holding portion 23C. Since the substrates W in the batch are arranged face to face, the device surfaces of the first substrates W1 constituting the batch are all facing the vertical holding portion 23C. Figure 4 On the right side of (f), the device surface of the second substrate W2 is all oriented toward Figure 4 In this way, the push rod mechanism 25 also supports the substrate group in the vertical posture into which the second substrate W2 accommodated in the second carrier C2 is posture-converted by the first posture conversion mechanism 15.

[0119] Figure 4 (f) in FIG. 1 shows a state when the pusher 25A moves to the upper position again. Then, the batch produced by the pusher 25A is transported in the left direction (Y direction) by the horizontal moving unit 25C and moved to the substrate taking-over position PP.

[0120] Thus, the pusher mechanism 25 combines two substrate groups stored in the carrier C at full pitch to form a batch in which the substrates W are arranged at half pitch. The device surface of the first substrate W1 and the device surface of the second substrate W2 constituting the batch face each other, and the substrates are arranged face to face.

[0121] The dry batch support 33 is mainly provided for the purpose of temporarily standing by the batch assembled by the HVC posture conversion unit 23 and the push rod mechanism 25, and is located between the substrate delivery position PP and the relay position 6 described later. When the batch is transferred from the dry batch support 33 to the batch processing block 7, the second substrate transfer mechanism WTR of the batch processing apparatus 1 is used.

[0122] <5. Batch processing device: Batch processing block>

[0123] The batch processing block 7 is adjacent to the transfer block 5. The batch processing block 7 performs batch processing on the batches. The batch processing block 7 is divided into a batch processing area R1 arranged in the width direction (Y direction) and a unified transfer area R2. Each area extends in the front-back direction (X direction). In detail, the batch processing area R1 is arranged inside the batch processing block 7. The unified transfer area R2 is adjacent to the batch processing area R1 and is arranged at the leftmost side of the batch processing block 7.

[0124] <5.1. Batch processing area>

[0125] The batch processing area R1 in the batch processing block 7 is a rectangular area extending in the front-rear direction (X direction). One end side (front side) of the batch processing area R1 is adjacent to the relay device 6. The other end side of the batch processing area R1 extends in a direction away from the transfer block 5 and the relay device 6 (rear direction). Therefore, the relay device 6 is a device inserted into a position where the batch processing device 1 is divided from the middle. When transferring a batch from the batch processing device 1 to the relay device 6, the second substrate transfer mechanism WTR of the batch processing device 1 is used.

[0126] The second substrate transport mechanism WTR collectively transports a plurality of substrates W in a vertical posture between the transfer block 5, the batch processing units BPU1 to BPU6, and the transfer position IP of the relay device 6. Therefore, the area in which the second substrate transport mechanism WTR can move, that is, the collective transport area R2, is not divided by the relay device 6, but extends in the Y direction along the left end of the relay device 6. The relay device 6 is a structure embedded in the inside of the batch processing device 1, but does not reach the left end of the batch processing device 1. This is because the collective transport area R2 is set at the left end of the batch processing device 1.

[0127] The batch processing region R1 mainly includes a batch processing section for performing batch processing. Specifically, in the batch processing region R1, a batch drying chamber DC for uniformly drying a plurality of substrates W and a plurality of batch processing units BPU1 to BPU6 for uniformly performing immersion processing on a plurality of substrates W are arranged in the direction in which the batch processing region R1 extends. The batch processing units BPU1 to BPU6 uniformly perform immersion processing on a plurality of substrates in a vertical posture. The configuration of the batch drying chamber DC and the batch processing units BPU1 to BPU6 will be described in detail. The batch drying chamber DC is adjacent to the relay device 6 from the rear. The first batch processing unit BPU1 is adjacent to the batch drying chamber DC from the rear. The second batch processing unit BPU2 is adjacent to the first batch processing unit BPU1 from the rear. The third batch processing unit BPU3 is adjacent to the second batch processing unit BPU2 from the rear. The fourth batch processing unit BPU4 is adjacent to the third batch processing unit BPU3 from the rear. The fifth batch processing unit BPU5 is adjacent to the fourth batch processing unit BPU4 from the rear. The sixth batch processing unit BPU6 is adjacent to the fifth batch processing unit BPU5 from the rear. Therefore, the batch drying chamber DC, the first batch processing unit BPU1, the second batch processing unit BPU2, the third batch processing unit BPU3, the fourth batch processing unit BPU4, the fifth batch processing unit BPU5, and the sixth batch processing unit BPU6 are arranged in a manner of leaving the relay device 6 in sequence. Figure 1 For the convenience of drawing, the second batch processing unit BPU2 to the fifth batch processing unit BPU5 are omitted. Figure 2 Batch processing units BPU1 to BPU6 are equivalent to the batch processing tank of the present invention.

[0128] Specifically, the second batch processing unit BPU2 includes: a batch chemical liquid processing tank CHB2 for uniformly processing the batches with chemical liquid; and a lift LF2 for lifting the batches between the substrate transfer position and the chemical liquid processing position (refer to Figure 2 ). The substrate transfer position is set at a position above the batch chemical liquid treatment tank CHB2 that can be received by the second substrate transport mechanism WTR, and the chemical liquid treatment position is set at a position in the tank of the batch chemical liquid treatment tank CHB2 that can immerse the batch in the chemical liquid. The batch chemical liquid treatment tank CHB2 performs an acid treatment on the batch. The acid treatment may be a phosphoric acid treatment or a treatment using other acids. The phosphoric acid treatment performs an etching treatment on the multiple substrates W constituting the batch. The etching treatment, for example, chemically etches the nitride film on the surface of the substrate W.

[0129] The batch chemical liquid processing tank CHB2 contains an acid solution such as a phosphoric acid solution. The batch chemical liquid processing tank CHB2 is provided with an elevator LF2 for moving the batch up and down. The batch chemical liquid processing tank CHB2 supplies chemical liquid from the bottom to the top, for example, to cause chemical liquid convection. The elevator LF2 moves up and down in the vertical direction (Z direction). Specifically, the elevator LF2 moves up and down over a processing position corresponding to the inside of the batch chemical liquid processing tank CHB2 and a handover position corresponding to the top of the batch chemical liquid processing tank CHB2. The elevator LF2 holds a batch consisting of substrates W in a vertical posture. At the handover position, the elevator LF2 hands over the batch with the second substrate transport mechanism WTR. If the elevator LF2 descends from the handover position to the processing position while holding the batch, the entire area of ​​the substrate W is located below the liquid surface of the chemical liquid. If the elevator LF2 rises from the processing position to the handover position while holding the batch, the entire area of ​​the substrate W is located above the liquid surface of the chemical liquid.

[0130] Specifically, the third batch processing unit BPU3 comprises: a batch chemical liquid treatment tank CHB3; and an elevator LF3 for raising and lowering the batch between the substrate handover position and the chemical liquid treatment position. The batch chemical liquid treatment tank CHB3 has the same structure as the batch chemical liquid treatment tank CHB2. That is, the chemical liquid is contained in the batch chemical liquid treatment tank CHB3, and an elevator LF3 is attached. The batch chemical liquid treatment tank CHB3 performs the same treatment on the batch as the batch chemical liquid treatment tank CHB2. The batch processing apparatus 1 of this example comprises a plurality of treatment tanks capable of performing the same chemical liquid treatment. This is because phosphoric acid treatment takes more time than other treatments. Phosphoric acid treatment takes a long time (for example, 60 minutes). Therefore, the apparatus of this example can perform acid treatment in parallel through a plurality of batch chemical liquid treatment tanks.

[0131] The 4th batch processing unit BPU4 to the 6th batch processing unit BPU6 have the same structure as the 2nd batch processing unit BPU2 and the 3rd batch processing unit BPU3. That is, the 4th batch processing unit BPU4 includes: a batch chemical liquid processing tank CHB4; and an elevator LF4 that raises and lowers the batch between the substrate handover position and the chemical liquid processing position. Similarly, the 5th batch processing unit BPU5 includes: a batch chemical liquid processing tank CHB5; and an elevator LF5 that raises and lowers the batch between the substrate handover position and the chemical liquid processing position. And, the 6th batch processing unit BPU6 includes: a batch chemical liquid processing tank CHB6; and an elevator LF6 that raises and lowers the batch between the substrate handover position and the chemical liquid processing position. Therefore, the batch is acid-treated in any one of the batch chemical liquid processing tanks CHB2 to CHB6. If chemical liquid treatment is performed in parallel by 5 processing units in this way, the processing capacity of the device is improved.

[0132] Specifically, the first batch processing unit BPU1 includes: a batch cleaning processing tank ONB for storing cleaning liquid; and an elevator LF1 for lifting and lowering the batch between the substrate transfer position and the cleaning position. The substrate transfer position is set at a position above the batch cleaning processing tank ONB that can be received by the second substrate transport mechanism WTR, and the cleaning position is set at a position in the tank of the batch cleaning processing tank ONB that can immerse the batch in the cleaning liquid. The batch cleaning processing tank ONB has the same structure as the batch chemical liquid processing tank CHB2. That is, the batch cleaning processing tank ONB stores cleaning liquid and is attached with an elevator LF1. The batch cleaning processing tank ONB is different from other processing tanks in that it stores pure water and is provided for the purpose of cleaning the chemical liquid attached to a plurality of substrates W. In the batch cleaning processing tank ONB, if the resistivity of the pure water in the tank rises to a specified value, the cleaning process is completed.

[0133] Thus, the batch cleaning processing tank ONB of the present embodiment is located closer to the relay device 6 than the batch chemical liquid processing tanks CHB2 to CHB6. By configuring in this way, the components constituting the relay device 6 are separated from the batch chemical liquid processing tanks CHB2 to CHB6 as much as possible, and the relay device 6 is not adversely affected by the acid such as phosphoric acid. In addition, by arranging the relay device 6 and the batch cleaning processing tank ONB close to each other, the batch after the cleaning process is transported a short distance and immediately transported to the relay device 6. Therefore, according to the configuration of the present embodiment, the substrate W can be quickly transported while keeping the substrate W in a wet state.

[0134] <5.2. Unified transport area>

[0135] The unified transfer area R2 in the distribution processing block 7 is a rectangular area extending in the front-rear direction (X direction). The unified transfer area R2 is provided along the outer edge of the batch processing area R1, and one end side extends to the transfer block 5, and the other end side extends in the direction away from the transfer block 5. Therefore, the unified transfer area R2 is also configured along the relay device 6 located at a position sandwiched between the transfer block 5 and the batch processing block 7.

[0136] In the unified transfer area R2, a second substrate transfer mechanism WTR for unified transfer of a plurality of substrates W is provided. The second substrate transfer mechanism WTR is configured to uniformly transfer a plurality of substrates W (specifically, batches) between the substrate transfer position PP specified in the transfer block 5, the drying batch support 33, the batch drying chamber DC, each batch processing unit BPU1 to BPU6, and the transfer position IP in the relay device 6 described later. The second substrate transfer mechanism WTR is configured to be able to reciprocate in the front-to-back direction (X direction) across the transfer block 5, the relay device 6, and the batch processing block 7. In addition to the unified transfer area R2 in the batch processing block 7, the second substrate transfer mechanism WTR can also move to the substrate transfer position PP in the transfer block 5, the drying batch support 33, and the transfer position IP in the relay device 6.

[0137] The second substrate transport mechanism WTR is equipped with a pair of chucks 29 for transporting a batch. The pair of chucks 29 can be changed into a closed state in which they are close to each other and an open state in which they are separated from each other. The chucks 29 are components extending in the Y direction in which grooves for holding the substrate W are arranged at half pitch. The pair of chucks 29 are in a closed state to receive a plurality of substrates W constituting a batch. In addition, the pair of chucks 29 are in an open state to transfer a plurality of substrates W constituting a batch to other components (elevator LF1, etc.). The second substrate transport mechanism WTR delivers a batch between the substrate delivery position PP and the drying batch support portion 33 in the transfer block 5 and the elevator LF65 belonging to the batch standby slot 65 set at the carry-in position IP in the relay device 6. In addition, the second substrate transport mechanism WTR delivers a batch between the elevators LF1 to LF6 of the batch processing units BPU1 to BPU6 belonging to the batch processing block 7 and the batch drying chamber DC.

[0138] The unified transfer region R2 is provided with a guide rail 31X extending in the X direction for guiding the second substrate transfer mechanism WTR. The second substrate transfer mechanism WTR can move forward and backward in the X direction along the guide rail 31X. Therefore, the guide rail 31X extends from the batch processing block 7 to the transfer block 5 via the relay device 6. More specifically, the guide rail 31X faces the substrate transfer position PP in the transfer block 5 from the Y direction, and faces the sixth batch processing unit BPU6 in the batch processing block 7 from the Y direction. In addition, the guide rail 31X faces the drying batch support 33 in the transfer block 5, the batch standby slot 65 in the relay device 6, the batch drying chamber DC in the batch processing block 7, and the first batch processing unit BPU1 to the sixth batch processing unit BPU6 from the Y direction.

[0139] <5.3. Other components>

[0140] The batch drying chamber DC is arranged at a position sandwiched by the first batch processing unit BPU1 and the relay device 6. The batch drying chamber DC has a drying chamber for accommodating batches of substrates W arranged in a vertical posture. The drying chamber has an inert gas nozzle for supplying an inert gas into the chamber and a steam supply nozzle for supplying the vapor of an organic solvent into the tank. The batch drying chamber DC first supplies an inert gas to the batch supported in the chamber, and replaces the atmosphere in the chamber with the inert gas. Then, the decompression in the chamber is started. While the chamber is decompressed, the vapor of the organic solvent is supplied into the chamber. The organic solvent is discharged to the outside of the chamber along with the moisture attached to the substrate W. In this way, the batch drying chamber DC performs drying of the batch. At this time, the inert gas may be, for example, nitrogen, and the organic solvent may be, for example, IPA (isopropyl alcohol). In this embodiment, the batch drying chamber DC is not used, and the substrate W is dried by the single-wafer processing device 2. The batch drying chamber DC is a structure used when the substrate is processed by the batch processing device 1 alone. In the above case, the batch that has completed the batch cleaning process in the batch cleaning process tank ONB is not moved to the relay device 6, but is dried in the batch drying chamber DC and then transported to the substrate transfer position PP. The transport of the batch is performed by the second substrate transport mechanism WTR. Figure 4 The arrangement of the first substrate W1 and the arrangement of the second substrate W2 are divided into the opposite path of the description. The arrangement of the first substrate W1 is returned to the empty carrier C by the first substrate transport mechanism HTR, and the arrangement of the second substrate W2 is then returned to the empty carrier C by the first substrate transport mechanism HTR.

[0141] <6. Relay device>

[0142] The relay device 6 is a structure that bridges the batch processing apparatus 1 and the single-wafer processing apparatus 2, and the left end portion is embedded in the batch processing apparatus 1, and the right end portion is embedded in the single-wafer processing apparatus 2. The relay device 6 includes a conveying path for the substrate W extending in the Y direction, which connects the unified conveying area R2 of the batch processing apparatus 1 to the single-wafer conveying area R3 of the single-wafer processing apparatus 2. The conveying path is a structure that conveys the substrate W in the Y direction (horizontally) without changing the position of the substrate W in the Z direction. Therefore, the insertion position of the relay device 6 of the batch processing apparatus 1 and the insertion position of the relay device 6 of the single-wafer processing apparatus 2 are the same position in the Z direction.

[0143] The relay device 6 is located in the middle layer of the batch processing device 1 and the single-chip processing device 2 (refer to Fig.17 ). Therefore, the relay device 6 is located in the air away from the bottom surface where the batch processing device 1 and the single-wafer processing device 2 are installed, and bridges the batch processing device 1 and the single-wafer processing device 2. The specific position of the relay device 6 is related to the structure of the single-wafer processing device 2, so it will be described in detail in conjunction with the description of the single-wafer processing device 2.

[0144] The relay device 6 includes a relay housing 6A that connects the first housing 1A of the batch processing device 1 and the second housing 2A of the single-wafer processing device 2, which are separated from each other in the Y direction. The relay housing 6A is provided between a third wall surface 1B of the wall surface constituting the first housing 1A and facing the second housing 2A, and a fourth wall surface 2B of the wall surface constituting the second housing 2A and facing the third wall surface 1B.

[0145] The relay housing 6A has a side wall 62a, a bottom plate 62b, and a top plate 62c for connecting the batch processing device 1 and the single-wafer processing device 2. Figure 2 , Fig.17 The relay housing 6A connects the housings of the batch processing apparatus 1 and the single wafer processing apparatus 2 to form a substrate processing system. Thus, the substrate processing system is configured to isolate the atmosphere in the apparatus from the outside air.

[0146] The relay device 6 includes: a batch standby tank 65 for allowing the batch processed to standby in pure water; an underwater posture conversion unit 55 for receiving a plurality of substrates W arranged in the Y direction and converting the postures of the plurality of substrates W from a vertical posture to a horizontal posture by uniformly rotating the received substrates W by 90° in water; a relay transport mechanism OTR for transporting the substrates W in the horizontal posture to the carrying-out position OP one by one; and a rotation adjustment mechanism SRM for adjusting the orientation of the substrates W. The batch standby tank 65, the underwater posture conversion unit 55, the relay transport mechanism OTR, and the rotation adjustment mechanism SRM are arranged in the right direction in this order starting from the left part of the batch processing device 1. The following will describe each part in detail. In addition, the underwater posture conversion unit 55 is equivalent to the posture conversion mechanism of the present invention.

[0147] <6.1. Relay device: Batch standby slot>

[0148] The batch standby tank 65 immerses the batch processed in pure water. The batch standby tank 65 has the same structure as the first distribution processing unit BPU1 of the batch processing device 1. That is, the batch standby tank 65 holds pure water and has an elevator LF5 for lifting and lowering the batch. The elevator LF65 can reciprocate between the carry-in position IP for carrying the batch into the relay device 6 and the immersion position for immersing the carried-in batch in pure water. The carry-in position IP is a position specified for receiving the substrates processed in the batch from the batch processing device 1. The carry-in position IP is located above the immersion position and is a position where the substrate can be transported by the second substrate transport mechanism WTR. The carry-in position IP is set in a manner that the entire area of ​​the substrates W constituting the batch is in the air, and the immersion position is set in a manner that the entire area of ​​the substrates W constituting the batch is immersed in pure water.

[0149] <6.2. Relay device: Full pitch array substrate transport mechanism>

[0150] The full-pitch arrangement substrate transfer mechanism STR divides the batch area immersed in the batch standby tank 65 into the first substrate W1 and the second substrate W2. The full-pitch arrangement substrate transfer mechanism STR can transfer 25 substrates W arranged at full pitch between the batch standby tank 65 and the underwater posture conversion unit 55. The batch standby tank 65 provides 50 substrates W arranged at half pitch for standby, and the full-pitch arrangement substrate transfer mechanism STR picks up half of the 25 substrates and transfers them to the underwater posture conversion unit 55. The full-pitch arrangement substrate transfer mechanism STR has a pair of chucks 30 that are the same as the pair of chucks 29 in the second substrate transfer mechanism WTR. In the chuck 30, grooves are formed at half pitch intervals like the chuck 29, but it is different from the chuck 29 in that two types of grooves are alternately arranged. That is, in the chuck 30, deep grooves that cannot hold the substrate W and shallow grooves that hold the substrate W are alternately arranged at half pitch intervals. Therefore, if the batch on the elevator LF65 is to be held by the full-pitch arrangement substrate transport mechanism STR, 25 substrates W are picked up by the shallow grooves that cannot hold the substrates W, and the remaining 25 substrates W cannot abut against the deep grooves and remain in the elevator LF65. Since the shallow grooves in the chuck 30 are arranged at a pitch that is twice the half pitch (full pitch), the full-pitch arrangement substrate transport mechanism STR picks up 25 substrates W arranged at a full pitch from the batch in the elevator LF65. From the perspective that the batch is composed of substrates W arranged face to face, the picked-up substrates W are arranged with the front side (device side) on the right and the back side on the left in a manner that the device surfaces of adjacent substrates W do not face each other. On the other hand, the 25 substrates W that are not picked up and remain in the elevator LF65 are arranged with the front side (device side) on the left and the back side on the right in a manner that the device surfaces of adjacent substrates W do not face each other. The full-pitch arrangement substrate transport mechanism STR is equivalent to the substrate group distinguishing mechanism of the present invention.

[0151] The pair of chucks 30 provided in the full-pitch array substrate transport mechanism STR can be in two states, namely, a closed state in which the chucks 30 are close to each other in the X direction and an open state in which the chucks 30 are separated from each other in the X direction, similarly to the chucks 29 of the second substrate transport mechanism WTR. When the pair of chucks 30 are in the closed state, the chucks 30 are sufficiently close to each other with respect to the diameter of the substrate W, so that two locations of the lower part of the substrate W abut against each of the chucks 30. In this way, the substrate W is held by the pair of chucks 30. When the pair of chucks 30 that are in the closed state are in the open state, the chucks 30 are sufficiently separated from each other with respect to the diameter of the substrate W, so that the substrate W is detached from the chucks 30. Specifically, the pair of chucks 30 are in the open state before the multiple substrates W are received from the elevator LF65 at the carrying-in position IP and after the multiple substrates W are transferred to the push rod 55A described later at the empty position above the immersion tank described later.

[0152] The relay device 6 is provided with a guide rail 31Y extending in the Y direction for guiding the full-pitch array substrate transport mechanism STR. The full-pitch array substrate transport mechanism STR can move forward and backward along the guide rail 31Y in the Y direction. Therefore, the guide rail 31Y extends from the batch standby tank 65 to the underwater posture conversion unit 55.

[0153] The fully pitched substrate transport mechanism STR can move forward and backward in the Y direction from the position where the batch of the elevator LF65 is transferred by the guide rail 31Y, that is, the carry-in position IP, to the position above the immersion tank where the push rod 55A described later of the underwater posture conversion unit 55 receives multiple substrates W. As a result, the fully pitched substrate transport mechanism STR can transport multiple substrates W from the carry-in position IP to the position above the immersion tank in the Y direction. In addition, when the second substrate transport mechanism WTR moves from the transfer block 5 to the batch processing block 7, the fully pitched substrate transport mechanism STR can also move to the position above the immersion tank without interfering with the second substrate transport mechanism WTR (refer to Figure 2 ).

[0154] <6.3. Relay device: underwater conversion unit>

[0155] The underwater posture conversion unit 55 converts the plurality of substrates W received from the batch processing apparatus 1 from a vertical posture to a horizontal posture. The underwater posture conversion unit 55 converts the first substrate W1 and the second substrate W2 divided into the vertical posture into a horizontal posture in unison. The underwater posture conversion unit 55 includes an immersion tank 73 for holding pure water, an inversion chuck 71 located above the immersion tank 73, and a pair of inversion chuck support mechanisms 72 for holding each of the inversion chucks 71 and lifting and rotating the inversion chucks 71. The inversion chuck 71 can be lifted and lowered into the liquid of the immersion tank 73 from a substrate handover position with the full-pitch array substrate transport mechanism STR set on the liquid surface of the immersion tank 73. The inversion chuck 71 can immerse the plurality of substrates W received from the full-pitch array substrate transport mechanism STR in the immersion tank 73, and rotate 90 degrees in one direction or the opposite direction in the above state. The posture of the plurality of substrates W in the vertical posture is converted into a horizontal posture by the rotation of the pair of inversion chucks 71.

[0156] The inverted chuck 71 can change its state between a closed state in which a plurality of substrates W can be held by the operation of the pair of inverted chuck support mechanisms 72, and an open state in which the held plurality of substrates W are released. In addition, the inverted chuck 71 can rotate 90° in one direction and in the opposite direction while maintaining the positional relationship with each other by the operation of the pair of inverted chuck support mechanisms 72. In addition, the inverted chuck 71 can be raised and lowered from above the immersion tank 73 to the liquid in the immersion tank 73 while maintaining the positional relationship with each other by the operation of the pair of inverted chuck support mechanisms 72.

[0157] The multiple V-grooves 71a of the reversal chuck 71 are in a comb-like shape arranged at intervals with full pitch, and the pair of reversal chucks 71 hold multiple substrates W from both sides by inserting multiple substrates W into the V-grooves. If the reversal chuck 71 is in a closed state, the ends of the substrates are in contact with the deepest part of the V-grooves, and even if the reversal chuck 71 is rotated in this state, the substrates W will not slip off the reversal chuck 71. If the reversal chuck 71 is in an open state, the substrate W can be received from the full-pitch array substrate transport mechanism STR that holds multiple substrates W and waits above the immersion tank 73. In addition, the reversal chuck 71 can also take a state between the open state and the closed state (half-open state), and the state will be described below.

[0158] <6.4. Relay device: Relay transport mechanism>

[0159] The relay transport mechanism OTR is a mechanism provided between the carry-in position IP and the carry-out position OP, and receives the substrates W in the horizontal position one by one from the underwater position conversion unit 55, and carries the substrates W out to the carry-out position OP along the substrate transport path. Figure 1 As shown in FIG. 1 , the substrate W is guided by a relay rail 32Y extending in the Y direction from the underwater posture conversion unit 55 to the rotation adjustment mechanism SRM described later, and can move in the Y direction. The relay transport mechanism OTR has a hand 103. The relay transport mechanism OTR can receive the substrates W in the horizontal posture from the inversion chuck 71 one by one by making the hand 103 face the underwater posture conversion unit 55 side. In addition, the relay transport mechanism OTR can transport the substrate to the carrying-out position OP of the rotation adjustment mechanism SRM by using an arm.

[0160] <6.5. Relay device: Operation of the relay transport mechanism>

[0161] A description will be given of a situation in which the relay device 6 transfers the substrate W located at the carry-in position IP to the carry-out position OP. The carry-out position OP is a position defined to transfer the substrate W received at the carry-in position IP to the wafer processing apparatus 2. Figure 5A The lift LF65 is shown holding a plurality of substrates W at the carry-in position IP set above the batch standby tank 65. The substrates W are transported to the carry-in position IP by the second substrate transport mechanism WTR. The plurality of substrates W placed on the lift LF65 are arranged face to face, with substrates W with device surfaces facing the right and substrates W with device surfaces facing the left being arranged alternately.

[0162] At this time, if the lifter LF65 descends from the carrying position IP to the immersion position, it is possible to prevent the substrates W waiting to be transferred from being dried while the substrates W are being transferred one by one in the relay device 6 .

[0163] Figure 5AThe figure shows a state where the plurality of substrates W are collectively transferred from the lift LF65 to the full-pitch arrangement substrate transport mechanism STR in order to transport the plurality of substrates W to the underwater posture conversion unit 55. At this time, the lift LF65 supports the plurality of substrates W at the carry-in position IP, and the full-pitch arrangement substrate transport mechanism STR moves a pair of chucks 30 to a position where the batch can be held, and sets the chucks 30 to a closed state. At this time, as described above, the chucks 30 can only hold half of the plurality of substrates W arranged at half pitch that constitute the batch. As a result, the batch is in a state where the substrates W held by the chucks 30 and the substrates W not held by the chucks 30 are alternately arranged.

[0164] Figure 5B The following figure shows the situation when the lift LF65 is lowered from the carrying position IP to the immersion position. Figure 5A The state of the substrate W is lowered, then the multiple substrates W arranged at full pitch, which is equivalent to half of the substrates W constituting the batch, remain in the fully pitched substrate transport mechanism STR, and the remaining half of the substrates W are returned to the batch standby tank 65 in the state of being arranged at full pitch in the lift LF65. The device surface of the multiple substrates W remaining in the fully pitched substrate transport mechanism STR faces right, and the device surface of the multiple substrates W held in the immersion position by the lift LF65 faces left.

[0165] Fig. 6A The figure shows the state when the full-pitch array substrate transport mechanism STR transports the plurality of substrates W to the space above the immersion tank 73. At this time, the pair of inverting chucks 71 are located above the full-pitch array substrate transport mechanism STR, and the rotation angle is 0° in the initial state. The inverting chucks 71 in the initial state extend in the horizontal direction and can receive the plurality of substrates W in a vertical posture.

[0166] Figure 6B The reverse chuck 71 is then shown to be lowered to the full pitch array substrate transport mechanism STR. The movement of the reverse chuck 71 is realized by the reverse chuck support mechanism 72. Figure 6B The figure shows the state where 25 substrates W are transferred from the chuck 30 of the full-pitch arrangement substrate transport mechanism STR to the reversal chuck 71. That is, the pair of reversal chucks 71 are maintained in an open state, descend to the full-pitch arrangement substrate transport mechanism STR, and then are set to a closed state. Since the pair of reversal chucks 71 in the open state are separated by only a distance for the substrate W to pass, they can approach the chuck 30 without contacting the substrate W. After that, the reversal chuck 71 is closed by the action of the reversal chuck support mechanism 72, and holds the 25 substrates W. At this time, the 25 substrates W are held by either the chuck 30 or the reversal chuck 71. After that, the chuck 30 is opened and withdrawn in the Y direction (left direction). In this way, the substrate W is transferred from the chuck 30 to the reversal chuck 71. Figure 6C25 substrates W are transferred to the inversion chuck 71. Figure 6C As shown by the arrow, it descends below the liquid surface of the immersion tank 73, so that the 25 substrates W are immersed in the pure water maintained in the immersion tank 73.

[0167] Fig. 7A The inversion chuck 71 is then shown to be rotated 90 degrees in a state where 25 substrates W are immersed in pure water. The operation of the inversion chuck 71 is realized by the inversion chuck supporting mechanism 72 . Figure 7B The figure shows the state where the 90° rotation of the inverted chuck 71 is completed. In this way, the device surfaces of the 25 substrates W immersed in the immersion tank 73 and facing the Y direction (left direction) are rotated 90° to face upward. If the substrates W are tilted in this way, the posture of the substrates W can be set to a horizontal posture with the device surface facing upward. The substrates W in the horizontal posture are then transported with the device surface W facing upward.

[0168] Figure 7C The following figure shows a situation where the inverted chuck 71 moves one of the 25 substrates W to the liquid surface of the immersion tank 73. The operation of the inverted chuck 71 is realized by the inverted chuck support mechanism 72. Figure 7C , only one substrate W is located on the liquid surface, and the remaining 24 substrates W are below the liquid surface of the immersion tank 73. With such a configuration, the 24 substrates W will not dry out while waiting for transfer. The one substrate W located on the liquid surface is transferred to the transfer position OP by the relay transfer mechanism OTR while maintaining a horizontal posture. Thereafter, the inverted chuck support mechanism 72 raises the pair of inverted chucks 71 to a height equivalent to the full pitch each time the relay transfer mechanism OTR transfers the substrate W. After repeating the above operation, all 25 substrates W are transferred to the transfer position OP by the relay transfer mechanism OTR.

[0169] right Figure 5A to Figure 7C The opening and closing actions of the reversing chuck 71 in each state are described. As described above, Figure 5A to Figure 6A The pair of reverse chucks 71 in the state of being in an open state are not in a state capable of holding the substrate W. Since the reverse chuck 71 in the open state can pass through the substrate W, the reverse chuck 71 can be moved to a position where it does not collide with the substrate W. Figure 6B Position shown. Figure 6B In the embodiment, the pair of inverted chucks 71 are switched from the open state to the closed state. At this time, the V-shaped grooves of the pair of inverted chucks 71 are provided for each end of the 25 substrates W arranged at full pitch to enter and abut. Since the V-shaped grooves are arranged at full pitch, the 25 substrates W arranged at full pitch can be easily accommodated in each V-shaped groove. The state of the substrates W accommodated in each V-shaped groove is shown in FIG. Fig. 12A Detailed description in. Figure 6C to Figure 7BThe pair of inversion chucks 71 in the embodiment are in a closed state, and are in a state of holding the substrate W. In this state, even if the inversion chucks 71 are rotated, the held substrate W will not fall.

[0170] To achieve Figure 7C In this state, it is necessary to allow the relay transport mechanism OTR to transport the substrate W without causing the substrate W waiting in the immersion tank 73 to fall. Figure 7C In the state of the half-open state, the pair of inverting chucks 71 are set to a half-open state. Thus, a state in which the substrate W can be taken out and supported is achieved. Fig. 12C , Fig.12D Detailed description in.

[0171] Fig. 8A The figure shows that the lift LF65 holds a plurality of substrates W in the transfer position IP set above the batch standby slot 65. The transfer of the substrates to the transfer position IP is performed by the second substrate transfer mechanism WTR. Among the 25 substrates W placed on the lift LF65, the substrates W with the device surface facing the right are arranged at full pitch. These substrates W are Figure 5B The substrate W remaining in the batch standby tank 65. Fig. 8A Next, the conditions when these 25 substrates are transported are described. Fig. 8A In, it is shown Figure 7C The substrate transfer in the horizontal posture described above is completed, and the pair of inverted chucks 71 return to Figure 5A The pair of inversion chucks 71 in the initial state can introduce the substrate W in a vertical posture extending in the Y direction, and are located above the immersion tank 73 .

[0172] Figure 8B is corresponding to the Figure 5B The figure shows the situation where 25 substrates W are transferred to the chuck 30 of the full-pitch array substrate transfer mechanism STR. Fig.9A is corresponding to the Fig. 6A The figure shows the situation when the full-pitch array substrate transport mechanism STR moves 25 substrates W to the position clamped by the immersion tank 73 and a pair of reverse chucks 71. Fig. 9B is corresponding to the Figure 6B The figure shows the situation when 25 substrates W are transferred from the full-pitch array substrate transport mechanism STR to a pair of inverted chucks 71. Fig. 9C is corresponding to the Figure 6C The figure shows the situation when 25 substrates W supported by a pair of inverted chucks 71 are located above the immersion tank 73.

[0173] Fig. 10AThe inversion chuck 71 is then shown to be rotated positively by -90° while 25 substrates W are immersed in pure water. The operation of the inversion chuck 71 is realized by the inversion chuck supporting mechanism 72 . Fig. 10B The figure shows the state where the -90° rotation of the inverted chuck 71 is completed. In this way, the device surfaces of the 25 substrates W immersed in the immersion tank 73 and facing the Y direction (right direction) are rotated 90° to face upward. If the substrates W are tilted in this way, the posture of the substrates W can be set to a horizontal posture with the device surface facing upward. The substrates W in the horizontal posture are then transported with the device surface W facing upward.

[0174] Fig. 10C is corresponding to the Figure 7C , it shows a state where the pair of inverted chucks 71 are set to a half-open state, and only the substrate W located at the uppermost position is exposed above the liquid surface of the immersion tank 73. After that, the inverted chuck supporting mechanism 72 raises the pair of inverted chucks 71 to a height corresponding to the full pitch each time the relay transport mechanism OTR transports the substrate W. After repeating the above operation, all 25 substrates W are transported to the transport-out position OP by the relay transport mechanism OTR.

[0175] After that, the relay transport mechanism OTR is explained. Figure 7C , Fig. 10C The inverted chuck 71 in the state is transporting the substrate W in a horizontal posture. Fig.11A FIG. 100 shows a state in which the relay transport mechanism OTR moves to the vicinity of the immersion tank 73 in order to transport the substrate W. The hand 103 of the relay transport mechanism OTR is as shown in FIG. Fig.11A As shown in FIG. 1 , the hand 103 is provided with a sliding mechanism 102 for advancing and retreating the hand 103, and a supporting mechanism 101 for supporting the sliding mechanism 102. The sliding mechanism 102 supports the base of the hand 103, and can be Fig. 11B In this way, the hand 103 can be moved forward. Fig.11D The support mechanism 101 can reciprocate the slide mechanism 102 and the hand 103 in the Y direction. In addition, the support mechanism 101 can turn the hand 103 180 degrees to face the dipping tank 73 or the carrying-out position OP.

[0176] Fig. 11B The hand 103 is shown inserted between the substrate W on the liquid surface and the substrate W below the liquid surface through the sliding mechanism 102. Fig. 11B The substrate W is prepared to take a horizontal posture. At this time, the slide mechanism 102 can move from the initial position to the advanced position.

[0177] Fig. 11CThe figure shows a state where the pair of inverted chucks 71 are lowered while maintaining their positional relationship with each other, and the substrate W on the liquid surface is brought into contact with the upper surface of the hand 103. In this way, if the inverted chuck 71 is lowered so that the hand 103 takes the substrate W, the structure for moving the hand 103 up and down can be omitted to form a relay transport mechanism OTR, so that a substrate processing system with a simple device structure and less trouble can be provided.

[0178] Fig.11D The state in which the hand 103 that has taken the substrate W is retreated to the support mechanism 101 of the relay transport mechanism OTR through the slide mechanism 102 is shown. Since the pair of reverse chucks 71 are in a half-open state, the hand 103 is allowed to pull out the substrate W and support the substrate W held in the liquid. At this time, the slide mechanism 102 moves from the advanced position to the initial position.

[0179] The half-open state of the pair of inversion chucks 71 will be described. Fig. 12A like Figure 7B , Fig. 10B 2 is a cross-sectional view showing the state of 25 substrates W just after being rotated 90° or -90°. At this time, the pair of reverse chucks 71 are in a closed state, and both ends of the substrate W reach the deepest part of the V-shaped groove 71a. If the pair of reverse chucks 71 press both ends of the substrate W to fix the substrate W, the 25 substrates W will not slip off the pair of reverse chucks 71.

[0180] Fig. 12B is corresponding to the Fig. 11B A pair of reverse chucks 71 are set to a closed state, and the hand 103 is inserted between the substrates W. In addition, Fig. 12B and later Fig. 12C , Fig.12D In the figure, the liquid level of the immersion tank 73 is omitted.

[0181] Fig. 12C The figure shows a state when a pair of inverted chucks 71 in a closed state are slightly separated and in a half-open state. When the pair of inverted chucks 71 are in a half-open state, both ends of the substrate W move from the deepest part of the V-groove and come into contact with the wall portion constituting the V-groove. The state described is a state in which the substrate W will not slip off the inverted chuck 71 unless the inverted chuck 71 is rotated, and the substrate W itself is not fixed to the inverted chuck 71. Therefore, if the pair of inverted chucks 71 is in a half-open state, the substrate W waiting in the liquid can be held, and one substrate can be transferred to the hand 103 on the liquid surface. However, due to Fig. 12C In this state, the hand 103 has not yet come into contact with the substrate W, so in order to transfer the substrate W to the hand 103 , the substrate W needs to be lowered relative to the hand 103 .

[0182] Fig.12D is corresponding to the Fig. 11C sectional view of . Fig.12D A pair of reverse chucks 71 from Fig. 12C The state of the substrate W is slightly lowered, so that the substrate W contacts the hand 103. Fig.12D In the state, the substrate W is placed on the hand 103 at a position away from the wall surface of the V-shaped groove 71a of the reverse chuck 71. In other words, Fig.12D In the state, the substrate W does not contact the inversion chuck 71. Therefore, if the slide mechanism 102 is operated to move the hand 103 in the above state, the substrate W does not contact the inversion chuck 71 and is pulled out.

[0183] Fig.13A The substrate W is shown in a horizontal position obtained by a pair of inverted chucks 71. The substrate processing system of this embodiment has a structure related to the water retention of the substrate W in the middle of the substrate conveying path of the relay device 6. The shower head 69 supplies a spray of pure water to the substrate W. Figure 1 The tray 105 is a square plate-shaped member inserted into the gap between the hand 103 and the support mechanism 101, and holds the pure water supplied from the shower head 69 and dripping from the substrate W. Since the tray 105 hinders the movement of the sliding mechanism 102, the sliding mechanism 102 is Fig. 11B , Fig. 11C When the operation is performed in this manner, the tray 105 retreats in the X direction from the slide mechanism 102. The tray moving mechanism 108 is a structure for realizing the operation of the tray 105 described above.

[0184] Fig. 13B The relay transport mechanism OTR transports the substrate W in the Y direction and moves to the vicinity of the carry-out position OP. At this time, the hand 103 faces the immersion tank 73 and the inversion chuck 71 while holding the substrate W.

[0185] Fig. 13C The following figure shows a state where the support mechanism 101 of the relay transport mechanism OTR rotates 180° around the rotation axis 104 extending in the Z direction. By the operation of the support mechanism 101, the hand 103 facing the immersion tank 73 side faces the carrying-out position OP side.

[0186] Fig.14A The slide mechanism 102 then slides to move the hand 103 holding the substrate W to the carry-out position OP. At this time, the substrate W is located at the carry-out position OP specified in the substrate processing system. At this time, the slide mechanism 102 can move from the initial position to the advanced position.

[0187] The rotation adjustment mechanism SRM is a mechanism provided just below the carrying-out position OP. The rotation adjustment mechanism SRM has a plurality of (e.g., three) support pins 111 extending in the Z direction. The support pins 111 can be freely moved in and out of the Z direction. Each of the support pins 111 is synchronously extended and retracted so that the front ends thereof are at the same height. The bottom plate 110 is a structure for supporting the base ends of the support pins 111. Fig.14A In the embodiment, the front end of the support pin 111 is located below the carry-out position OP.

[0188] Fig. 14B The support pins 111 are then extended to move the substrate W supported by the hand 103 to the space above the carry-out position OP. In this way, the substrate W is transferred from the hand 103 to the support pins 111.

[0189] Fig. 14C The slide mechanism 102 then returns to the initial position after advancing, and the hand 103 is withdrawn from the carry-out position OP. The substrate W is supported by the support pins 111 above the carry-out position OP.

[0190] In this way, each of the substrates W constituting the batch carried into the carry-in position IP in the relay device 6 is set to a horizontal posture and transported piece by piece to the carry-out position OP. The substrate W transported to the carry-out position OP is moved to the space above the carry-out position OP by the support pins 111 of the rotation adjustment mechanism SRM, and then the position is adjusted by the rotation adjustment mechanism SRM.

[0191] <6.6. Relay device: Direction of notch>

[0192] The following describes the change in the orientation of the recess provided in the substrate W during the substrate transport process. Figure 1 The notches of the substrate W of the carrier C described above are all oriented to the left as an example, and will be described below. Fig.15 The notch processing apparatus 1 of the embodiment is configured as follows: each of the substrate groups stored in two carriers C is combined to form a batch, and after batch processing, the batch groups in the batch are released, the substrates W are set to a horizontal posture, and then the substrates W are transported to the single-wafer processing apparatus 2 one by one. Fig.15 25 first substrates W1 are stored at full pitch in the first carrier C1, and 25 second substrates W2 are stored at full pitch in the second carrier C2. These first substrates W1 and second substrates W2 are a group of substrates to be batched when constituting a batch.

[0193] The notches N1 of the first substrates W1 stored in the first carrier C1 all face left. Even if the first substrate W1 is held by the first substrate transport mechanism HTR, the orientation of the notches N1 does not change. Since the first substrate transport mechanism HTR needs to transfer the first substrate W1 to the HVC posture conversion unit 23, the first substrate W is rotated 90° counterclockwise. Thus, the notches N1 facing leftward face the rear side of the substrate processing system.

[0194] The first substrate transport mechanism HTR then transfers the first substrates W1 to the HVC posture conversion unit 23. The HVC posture conversion unit 23 rotates the transferred substrates by 90°, but since the notch N1 is located at the rotation center axis of the first substrate W1 at this time, the orientation of the notch N1 does not change. Therefore, the orientation of the notch N1 does not change according to the operation of the HVC posture conversion unit 23.

[0195] The first substrate W1 which has been set in the vertical posture by the HVC posture conversion unit 23 is transferred to the push rod 25A. The push rod 25A then Figure 3 As described in (d) of FIG. 1 , the first substrate W1 is rotated 180° around the Z axis. Since the notch N1 is not located at the rotation center axis at this time, the orientation of the notch N1 changes. Specifically, the notch N1 that was facing the rear side faces the front side.

[0196] On the other hand, the notches N2 of the second substrate W2 accommodated in the second carrier C2 all face leftward like the notches N1. The notches N2 are turned backward by the first substrate transport mechanism HTR and are transferred to the HVC posture switching unit 23.

[0197] The second substrate W2 which is changed into a vertical posture by the HVC posture conversion unit 23 is as shown in FIG. Figure 3 As described in (e) of FIG. 1 , the push rod 25A is placed on the push rod 25A rotated 180°. At this time, the orientation of the notch N2 does not change.

[0198] Thus, the notch N1 of the first substrate W1 constituting the batch is oriented toward the front side, while the notch N2 of the second substrate W2 constituting the batch is oriented toward the rear side. From the fact that the first substrate W1 and the second substrate W2 are alternately arranged in the batch, the substrates having notches facing the rear side and the substrates having notches facing the front side are alternately arranged in each substrate W constituting the batch. The substrates W constituting the batch are arranged face to face.

[0199] Fig.16It shows that the batches after various batch processes in the batch processing block 7 are converted into a horizontal posture by a pair of reversing chucks 71. First, the batches are divided into the arrangement of the first substrate W1 and the arrangement of the second substrate W2. At this time, the orientation of the notches N1 and N2 does not change. Next, the posture of the first substrate W1 is first changed, and the first substrate W1 becomes a horizontal posture. At this time, the first substrate W1 is rotated 90°, but because the orientation direction of the notch N1 is consistent with the rotation axis, the orientation of the notch N1 does not change. Similarly, the posture of the second substrate W2 is changed, and the second substrate W2 becomes a horizontal posture. At this time, the second substrate W2 is rotated -90°, but because the direction of the notch N2 is parallel to the rotation axis, the orientation of the notch N2 does not change. As a result, the orientation inconsistency between the notches N1 and N2 is not eliminated by the action of the reversing chuck 71. If the first substrate W1 and the second substrate W2 are directly transferred to the single-wafer processing device 2, the single-wafer processing is completed while the orientations of the recesses are kept inconsistent, and the first substrate W1 is returned to the carrier C placed on the second loading unit 10. Similarly, the second substrate W2 is returned to another carrier C placed on the second loading unit 10. The orientations of the recesses of the substrates W accommodated in each carrier C are consistent, but when the carriers C are compared, the orientations of the recesses differ by 180°.

[0200] In order to eliminate such mismatch, the substrate processing system of the embodiment is provided with a rotation adjustment mechanism SRM in the relay device 6. The rotation adjustment mechanism SRM has a function of making the orientations of the notches N1 and N2 consistent by rotating the second substrate W2 180 degrees without rotating the first substrate W1.

[0201] <6.7. Relay device: Configuration of the rotation adjustment mechanism>

[0202] Next, the structure of the rotation adjustment mechanism is described. When the orientation of the notch of the first substrate W1 converted to the horizontal posture by the underwater posture conversion unit 55 is different from the orientation of the notch of the second substrate W2, the rotation adjustment mechanism SRM makes the orientation of the notch of the first substrate W1 consistent with the orientation of the notch of the second substrate W2 by rotating the second substrate W2 at an angle different from the rotation angle of the first substrate W1. Fig.17This is a diagram when the single-wafer processing device 2 is observed from the batch processing device 1 side. As shown in the figure, the single-wafer processing chambers are stacked in the Z direction to form a stacked body. For example, the single-wafer processing chamber 49c is arranged on the upper side of the single-wafer processing chamber 48c, and the single-wafer processing chamber 47c is arranged on the lower side of the single-wafer processing chamber 48c. Similarly, another single-wafer processing chamber is arranged on the upper side of the single-wafer processing chamber 48a, and other single-wafer processing chambers are arranged on the lower side of the single-wafer processing chamber 48a. Another single-wafer processing chamber is also arranged on the upper side of the single-wafer processing chamber 48b, and other single-wafer processing chambers are also arranged on the lower side of the single-wafer processing chamber 48a. In addition, the single-wafer processing chamber is a structure for processing substrates W in a horizontal posture one by one, and the details are described below.

[0203] Fig.17 The relay device 6 is also described as being disposed at a position sandwiched between the single-wafer processing chambers from above and below. That is, the single-wafer processing chamber 49d is disposed above the relay device 6, and the single-wafer processing chamber 47d is disposed below the relay device 6.

[0204] Thus, the single-wafer processing chamber of this embodiment has: a first stacked body, which is composed of three single-wafer processing chambers belonging to the single-wafer processing chamber 48a arranged in the Z direction; a second stacked body, which is composed of three single-wafer processing chambers belonging to the single-wafer processing chamber 48b arranged in the Z direction; and a third stacked body, which is composed of three single-wafer processing chambers belonging to the single-wafer processing chamber 48c arranged in the Z direction. In addition, the single-wafer processing device 2 of this embodiment has two single-wafer processing chambers in which the relay device 6 is set at a position sandwiched from the Z direction. Therefore, the single-wafer processing device 2 has 9 single-wafer processing chambers constituting the stacked body and 2 single-wafer processing chambers set above and below the relay device 6, totaling 11 single-wafer processing chambers.

[0205] Shielding plate 16 Fig.17 As shown, it is a part of the second wall surface 2B of the single-wafer processing device 2, and is located at a position surrounded by the relay device 6, the single-wafer processing chamber 47d and the single-wafer processing chamber 49d located above and below the relay device 6, and the carrier block 4. The shielding plate 16 is provided in a manner to cover the rectangular opening that cannot be closed by the relay device 6 that is shorter than the single-wafer processing chamber 47d and the single-wafer processing chamber 49d in the X direction. If the shielding plate 16 is provided on the carrier block 4 side, the relay device 6 can be located on the central robot CR1 side, so that the substrate W received from the rotation adjustment mechanism SRM at the carrying-out position OP can be transferred to the single-wafer processing chamber without moving the central robot CR1 in the X direction.

[0206] In addition, the hand of the holding center robot CR1 holding the substrate W in a horizontal posture can move in the Z direction while maintaining the posture of the substrate W. By configuring the center robot CR1 in this way, the substrate W received from the rotation adjustment mechanism SRM can be transferred to the single-wafer processing chambers located on the upper and lower sides of the relay device 6. By arranging the relay device 6 in the middle layer of the stacked body of the single-wafer processing chamber, the rotation adjustment mechanism SRM is located in the middle of the single-wafer processing block 8 in the Z direction. If configured in this way, the rotation adjustment mechanism SRM is located in a nearby position with respect to any of the upper and lower single-wafer processing chambers, so when the substrate is transferred, there is no need to move the center robot CR1 a long distance in the Z direction, and the substrate W can be quickly transferred from the rotation adjustment mechanism SRM to the single-wafer processing chamber.

[0207] The rotation adjustment mechanism SRM includes a plurality of support pins 111 that can raise and lower the substrate W between the first position P1 at the top and the second position P2 at the bottom. The plurality of support pins 111 appear and disappear synchronously, so that the substrate W moves between the first position P1 and the second position P2, that is, the intermediate position P3. The plurality of support pins 111 raise the substrate W held by the relay transport mechanism OTR to the first position P1, and receive the substrate W from the relay transport mechanism OTR, and lower the received substrate W to the second position P2, so that it is placed on the rotating table 113. The first position P1, the second position P2, and the intermediate position P3 correspond to the unloading position of the present invention. The above configuration will be described in detail below.

[0208] like Fig.18A As shown, the rotation adjustment mechanism SRM has a rotating table 113 capable of placing a substrate W in a horizontal posture. The rotating table 113 has a disk-shaped central portion 113a and three extension portions 113b radially extending from the central portion 113a. The rotating table 113 can rotate around the central portion 113a and the rotating table 113 rotates around the Z axis. The three extension portions 113b rotate as the central portion 113a rotates.

[0209] Since the center portion 113a of the rotating table 113 is arranged away from the support pins 111, this point will be described. The support pins 111 are arranged at positions away from the periphery of the center portion 113a of the rotating table 113. Three support pins 111 are arranged at positions corresponding to the v points of an equilateral triangle whose center of gravity is the same as the rotation center of the rotating table 113, and the center portion 113a of the rotating table 113 will not interfere with the support pins 111 even if it rotates.

[0210] The extension part 113b of the rotating table 113 is a structure for surely placing the substrate W in a horizontal posture. It is set at a position avoiding the multiple extension parts extending from the rotation center of the rotating table 113 in the initial position. The front end of the extension part 113b is configured to protrude from the substrate W when the substrate W in a horizontal posture is placed on the rotating table 113, and is configured to surely support three locations of the periphery of the substrate W. The extension part 113b is configured to be sufficiently slender to prevent interference with the support pin 111 as much as possible. When the rotating table 113 is rotated, the position of the extension part 113b coincides with the position of the support pin 111. Since the support pin 111 is contracted in the initial state, the extension part 113b does not immediately collide with the support pin 111 even if the rotating table 113 is rotated. However, if the support pin 111 is extended in a state where the extension part 113b stops at a position overlapping with the support pin 111, the support pin 111 collides with the extension part 113b. Therefore, there is an angle range in which the rotating table 113 cannot stop. Since the extension portion 113 b of this embodiment is sufficiently slender, the angle range is as small as possible.

[0211] In addition, the support pins 111 are set at a position that does not interfere with the relay transport mechanism OTR that enters the space above the rotation adjustment mechanism SRM. That is, the three support pins 111 in the initial state are located in the space sandwiched by the pair of hands 103 located at the carry-out position OP. Therefore, when the support pins 111 receive the substrate W at the carry-out position OP, the support pins 111 and the hand 103 do not collide. The support pins 111 in the initial state are located below the second position P2 set at the lower part of the carry-out position OP. Regarding the second position P2, Fig.24A Described in detail.

[0212] The rotation adjustment mechanism SRM includes a rotation stage 113 capable of adjusting the position of the notch in the substrate W by rotating the substrates in a horizontal posture one by one at the unloading position OP. Fig.18B The more detailed structure of the rotation adjustment mechanism SRM is shown. Fig.18B As shown, the apparatus includes a rotation table 113 on which a substrate W is placed, a rotation shaft 114 extending in the Z direction and rotatably supporting the rotation table 113 , and a rotation shaft driving motor 114 m for driving the rotation shaft 114 . Fig.18B In the figure, the extension portion 113b of the rotating table 113 is omitted. The rotation drive motor 114m is attached to the bottom plate 110 of the rotation adjustment mechanism SRM.

[0213] A support pin retracting mechanism 112 is provided at the base of each support pin 111 for retracting and retracting the support pin 111. The support pin retracting mechanism 112 is attached to the base plate 110. The three support pin retracting mechanisms 112 are operated synchronously, and each of the support pins 111 is operated while keeping the front ends of the support pins 111 at the same height. Therefore, the three support pins 111 can be retracted and retracted while supporting the substrate W in a horizontal posture. Fig.18B In the embodiment, each of the support pins 111 is in a retracted state, and the front end of each of the support pins 111 is located below the rotating table 113. The support pins 111 are synchronously extended by the support pin retracting mechanism 112, and each of the support pins 111 becomes as follows Fig. 20B In the extended state shown, the front end of each of the support pins 111 is located above the rotating table 113 . Fig.18B In the figure, one of the three support pins 111 is omitted. The support pins 111 and the support pin retracting mechanism 112 correspond to the substrate lifting mechanism of the present invention.

[0214] The rotation adjustment mechanism SRM includes a substrate shifting mechanism for shifting the substrate W in such a manner that the center of the substrate W located at the first position P1 coincides with the rotation center of the rotating stage 113. The substrate shifting mechanism includes a positioning chuck 115 having an L-shaped cross section, and a moving mechanism 115a for reciprocating a pair of positioning chucks 115 in the radial direction of the substrate W. The positioning chucks 115 are provided on both the right side and the left side of the substrate W, and the pair of positioning chucks 115 are configured to hold both ends of the substrate W. In an initial state, the pair of positioning chucks 115 are in an open state, and the positioning chucks 115 are located at positions separated from each other. The pair of positioning chucks 115 are moved closer to each other, as shown in FIG. Fig. 22B As shown, the substrate W is clamped from both sides. In addition, a pair of positioning chucks 115 can also be used. Fig.22A The positioning chuck support 116 is a component that supports the positioning chuck 115 and has a sliding surface for the positioning chuck 115 to slide. The positioning chuck 115 is located at the lower part of the front end of the support pin 111 that is in the extended state. The positioning chuck support 116 is attached to the base plate 110.

[0215] The water supply nozzle 117 is provided for the purpose of supplying pure water to the device surface of the substrate W. The water supply nozzle 117 is located on the upper side of the center portion of the substrate and is configured to spray pure water to the substrate W. The water supply nozzle 117 is connected to an L-shaped water supply pipe 118a. The water supply pipe 118a is retractable in the Z direction. The operation of the water supply pipe 118a is realized by a water supply pipe driving mechanism 118b. The water supply pipe driving mechanism 118b is attached to the base plate 110. The water supply nozzle 117, the water supply pipe 118, and the water supply pipe driving mechanism 118b constitute a pure water supply mechanism of the present invention. The pure water supply mechanism is configured to supply pure water to the substrate W received by the rotation adjustment mechanism SRM. According to this configuration, the substrate W will not dry during the operation of the rotation adjustment mechanism SRM.

[0216] The guard 119 is provided for the purpose of preventing the pure water sprayed from the water supply nozzle 117 from reaching each driving mechanism. The guard 119 has a circular bottom plate and a cylindrical main body at the end connected to the bottom plate. The support pin 111 is inserted through a through hole provided in the bottom plate of the guard 119, and a waterproof member (not shown) is provided in the through hole so that the pure water does not leak from the gap between the support pin 111 and the bottom plate of the guard 119.

[0217] <6.8. Relay device: Operation of the rotation adjustment mechanism>

[0218] The rotation adjustment mechanism SRM receives a substrate W in a horizontal position from the substrate W carrying-out position OP of the relay transport mechanism OTR, rotates the substrate W by a predetermined angle, and transfers the substrate W to the central robot CR1 of the wafer processing apparatus 2 . Fig.19 Detailed description of the operation of the rotation adjustment mechanism SRM is given in the following flow chart. Fig.19 , while explaining the operation of the rotation adjustment mechanism SRM.

[0219] Step S11: First, the relay transport mechanism OTR transports the substrate W in a horizontal position to the carry-out position OP (intermediate position P3). At this time, the rotation adjustment mechanism SRM is in the initial state. In the rotation adjustment mechanism SRM in the initial state, the support pins 111 are in a retracted state, the pair of positioning chucks 115 are in an open state, and the water supply pipe 118a is in an extended state. The carry-out position OP is set at the upper part of the rotating table 113 and the lower part of the positioning chuck 115. Therefore, the substrate W located at the carry-out position OP is located above the front end of the support pins 111 in the retracted state and is located below the front end of the support pins 111 in the extended state. Of course, in the rotation adjustment mechanism SRM in the initial state, since the support pins 111 and the water supply nozzle 117 are not located at the carry-out position OP, the relay transport mechanism OTR can position the substrate W at the carry-out position OP without colliding with these components. Fig. 20AThe status of the rotation adjustment mechanism SRM in this step is shown. Fig. 20A As shown, the carrying-out position OP is sandwiched between the rotating table 113 and the water supply nozzle 117 . Fig. 20A The symbol 103 indicates the hand of the relay transport mechanism OTR. Fig. 20A In, omitted Fig.18B Hereinafter, the operation of the rotation adjustment mechanism SRM will be described while the guard 119 is omitted as appropriate.

[0220] according to Figures 20A to 28 ,illustrate Fig.16 The illustrated situation is that the notch N2 is rotated 180°. Fig. 20A In the figure, the notch N2 is located on the right side of the substrate W. Hereinafter, the position of the notch N2 is appropriately indicated in the figure.

[0221] Step S12: Fig. 20B The state when the substrate W is moved to the first position P1 by extending the support pins 111 is shown. When the support pins 111 are extended, the front ends of the support pins 111 contact the substrate W, and then the substrate W is moved upward. In this way, the substrate W is transferred from the hand 103 of the relay transport mechanism OTR to the support pins 111 of the rotation adjustment mechanism SRM. After that, the support pins 111 are in an extended state, and the substrate W is located above the pair of positioning chucks 115. At this time, the pair of positioning chucks 115 are in an open state, and the pair of positioning chucks 115 are separated to the extent that the substrate W can pass through.

[0222] Step S13: Fig.21A The following figure shows the situation when the hand 103 of the relay transport mechanism OTR retreats from the carry-out position OP. If the hand 103 retreats in the Y direction, the substrate W can be placed on the rotating table 113 by extending and retracting the support pins 111. The rotation adjustment mechanism SRM of the embodiment can align the substrate W in the XY direction before placing the substrate W on the rotating table 113. The following steps S14 to S18 are processes related to the alignment of the substrate W.

[0223] Step S14: Fig.21B The figure shows a state in which the pair of positioning chucks 115 are in a half-open state and are ready to receive the substrate W. When the pair of positioning chucks 115 are in a half-open state, the substrate W cannot pass between the positioning chucks 115. Therefore, when the substrate W located above the positioning chucks 115 (first position P1) is moved downward, the substrate W contacts the upper surface of the positioning chucks 115. Since the positioning chucks 115 are in a half-open state rather than a closed state, the substrate W is not clamped by the positioning chucks 115 but is only placed on the positioning chucks 115.

[0224] Step S15: Fig.22AThe state when the support pins 111 are subsequently retracted is shown. When the support pins 111 are retracted, the substrate W supported by the support pins 111 is transferred to the positioning chuck 115. Since a gap is provided between the side surface of the positioning chuck 115 and the peripheral edge of the substrate W, the substrate W is not clamped by the positioning chuck 115 at this point in time.

[0225] Step S16: Fig. 22B The following figure shows the state when the positioning chucks 115 are in a closed state. When the pair of positioning chucks 115 are in a closed state, both ends of the substrate W abut against each of the side surfaces of the positioning chucks 115. In this way, the substrate W is clamped by the pair of positioning chucks 115. At this time, the right end of the substrate W is pushed to the left by the right positioning chuck 115, and the left end of the substrate W is pushed to the right by the left positioning chuck 115. Assuming that the substrate W approaches the right positioning chuck 115, the gap between the substrate W and the positioning chuck 115 is different on the left and right, and the substrate W is also pushed by the pair of positioning chucks 115 and stored in a predetermined position. This is also the case when the substrate W approaches the left positioning chuck 115. That is, the centering of the substrate W is performed by the pair of positioning chucks 115 changing from a semi-open state to a closed state. Since the contact portion of the positioning chuck 115 that abuts against the substrate W is in an arc shape, the pair of positioning chucks 115 can center the substrate W not only in the X direction but also in the Y direction.

[0226] Step S17: Fig.23A The following figure shows the state when the support pins 111 are in the extended state. When the support pins 111 are in the extended state, the substrate W abuts against the front ends of the support pins 111 and is pushed to the first position P1, thereby being released from the positioning chuck 115 this time. In this way, the support pins 111 can obtain the centered substrate W from the pair of positioning chucks 115. Since the positioning chucks 115 in the closed state clamp the substrate W with a weak force, when the support pins 111 push the substrate W upward, the substrate W is easily separated from the positioning chuck 115. In addition, since the positioning chuck 115 is in an L shape, the positioning chuck 115 does not have a component that hinders the substrate W abutting against the side of the positioning chuck 115 from rising. Therefore, the substrate W is easily released from the positioning chuck 115 by the support pins 111.

[0227] Step S18: Fig. 23B The pair of positioning chucks 115 are then shown in an open state. The positioning chucks 115 in the open state are separated to a degree that allows the substrate W to pass through. In this way, the substrate W is ready to be moved from the positioning chucks 115 to the rotating stage 113.

[0228] Step S19: Fig.24AThe figure shows the state where the support pins 111 return to the retracted state. When the support pins 111 are in the retracted state, the front ends of the support pins 111 are located below the upper surface of the turntable 113. At this time, the substrate W abuts against the turntable 113 as the support pins 111 are retracted, and is not supported by the support pins 111. In this way, the substrate W is transferred from the support pins 111 to the turntable 113. Since the turntable 113 is located at the second position P2, the substrate W transferred to the turntable 113 is also located at the second position P2. The substrate W transferred to the turntable 113 has been subjected to centering processing by the positioning chuck 115. Therefore, when the substrate W is placed on the turntable 113, the rotation center of the turntable 113 and the center of the substrate W are aligned.

[0229] Step S20: Fig. 24B The figure shows a situation where the rotating stage 113 is then rotated 180 degrees and the notch N2 located at the right end of the substrate W is moved to the left end of the substrate W. In this way, the position of the notch N2 of the second substrate W2 is changed by the rotation adjustment mechanism SRM. Fig.25A , Fig.25B It is a top view explaining step S20. Fig.25A It shows the condition of the rotating table 113 before the rotation. Fig.25B The status of the rotating table 113 after rotation is shown. Fig.25A As shown in FIG. 1 , the extension portion 113b of the rotating table 113 is located at a position away from the support pin 111. The position is the initial position of the extension portion 113b, and the initial position is set in such a way that the extension portion 113b does not collide with the support pin 111 when the support pin 111 is in the extended state as in steps S12, S13, S14, S17, and S18. Fig.25A The state is rotated 180° around the Z axis and becomes Fig.25B At this time, since the support pin 111 is in the retracted state, the front end of the support pin 111 does not collide with the extending portion 113 b of the rotating table 113 .

[0230] like Fig.25B As shown, the extension part 113b of the rotating table 113 after rotation is located at a position away from the support pin 111. The position is the position of the extension part 113b after the rotation action, and the position after the rotation action is set as follows: as in step S22 and step S23 described later, when the support pin 111 becomes an extended state, the extension part 113b does not collide with the support pin 111.

[0231] In addition, due to the alternating repetition of Fig.25A Status and Fig.25B The rotation action of the second substrate W2 is performed while being in the state, so this point will be explained. Fig.25AIn the figure, the turntable 113 that received the substrate W is located at the initial position, but after rotating the substrate W by 180°, the turntable 113 is located at the position after the rotation action. The rotated substrate W is soon transported by the central robot CR1 of the single-wafer processing device 2, and the turntable 113 is left from the substrate W. Since there are multiple second substrates W2 that need to be rotated, the subsequent second substrate W2 is placed on the turntable 113. At this time, the turntable 113 is located at Fig.25B In the above case, the rotating stage 113 rotates 180° and returns to the initial position. Then, the second substrate W2 placed on the rotating stage 113 rotates 180° to adjust the position of the notch N2. In this way, the rotating stage 113 performs the rotation processing of multiple second substrates W continuously while repeating the initial position and the position after the rotation action alternately.

[0232] Step S21: Fig.26A The operation of supplying pure water to the substrate W after the rotation operation is described. In order to supply pure water to the substrate W, first, the water supply nozzle 117 is lowered to approach the substrate W. Then, pure water is radially emitted from the water supply nozzle 117. The range of the pure water is large enough to supply the pure water to the entire substrate W. The pure water supplied to the substrate W drips onto the substrate W and is received by the guard 119 provided at the bottom of the substrate W.

[0233] Step S22: Fig.26B The figure shows a state where the support pins 111 are then extended and the substrate W is raised to the first position P1. At this time, the water supply nozzle 117 is returned to the initial position defined above the positioning chuck 115 so as not to collide with the raised substrate W. In this way, the substrate W is separated from the rotating table 113, and the central robot CR1 of the single-wafer processing apparatus 2 is ready to take the substrate W.

[0234] Step S23: Fig.27A The figure shows a state where the hand 32 of the central robot CR1 enters the space (intermediate position P3) between the rotating table 113 and the substrate W. The hand 32 of the central robot CR1 is configured to hold the end of the substrate W in a manner that does not collide with the support pins 111, similarly to the hand 103 of the relay transport mechanism OTR. In this way, the central robot CR1 is ready to obtain the substrate W.

[0235] Step S24: Fig.27BThe figure shows the state when the support pins 111 are retracted and the substrate W is lowered. When the support pins 111 are retracted, the front end of the support pins 111 is located below the upper surface of the hand 32 of the central robot CR1 waiting at the intermediate position P3. At this time, the substrate W abuts against the hand 32 as the support pins 111 are retracted, and is not supported by the support pins 111. In this way, the substrate W is transferred from the support pins 111 to the central robot CR1. The central robot CR1 takes the substrate W into the interior of the single-wafer processing device 2, and the transfer of the second substrate W2 is completed. Fig.28 is a top view showing the positional relationship between the hand 32 of the central robot CR1 and the support pin 111, corresponding to Fig.18A As reference Fig.18A , Fig.28 It can be seen that the rotation adjustment mechanism SRM is provided with an entrance through which the hand 103 of the relay transfer robot OTR enters and an exit through which the hand 32 of the center robot CR1 enters.

[0236] Next, by repeating steps S11 to S24, all the second substrates W2 held by the pair of inverted chucks 71 are transferred to the single-wafer processing apparatus 2. In addition, the rotation adjustment mechanism SRM is repeated when transferring the first substrate W1 to the single-wafer processing apparatus 2. Fig.19 The operations of steps S11 to S19 and steps S21 to S24 except step S20 described above are different in the method of conveying the first substrate W1 and the method of conveying the second substrate W2 in terms of whether or not to carry out Fig. 24B , Fig.25A , Fig.25B The rotation action of the substrate W is described.

[0237] <7. Single-chip processing device: carrier block>

[0238] The carrier block 4 is adjacent to the second loading port 10. Figure 1 As shown, the second load port 10 is provided for placing a carrier C storing a plurality of substrates W in a horizontal posture with a predetermined interval in the vertical direction. Therefore, the second load port 10 is a carrier C placement table. The carrier C storing a plurality of substrates W that have been processed individually is placed on the second load port 10. Since the single-wafer processing apparatus 2 of this embodiment is configured to receive the substrates W that have been processed individually from the relay apparatus 6 without passing through the second load port 10, the second load port 10 is used as an exit for the substrates W in the single-wafer processing apparatus 2.

[0239] The internal structure of the carrier block 4 will be described. The carrier block 4 includes a carrier robot IR that transfers substrates W in a horizontal posture one by one between a carrier C and a bus 24 provided on the carrier block 4 side in a wafer processing block 8 described later.

[0240] The transfer robot IR stores the processed substrate W in a carrier C placed on the second loading port 10. The transfer robot IR includes a hand composed of a pair of holding bodies that hold the substrate W in a horizontal position at the front end, and an arm that supports the hand. The arm has a plurality of joints, the front end of which is connected to the hand, and the base end of which is connected to the base of the arm provided on the transfer block 4. The transfer robot IR of this embodiment is configured to receive the processed substrate W from the bus 24a and store it in the second loading port 10 outside the transfer block 4.

[0241] <8. Single chip processing device: Single chip processing block>

[0242] The wafer processing block 8 is adjacent to the carrier block 4. That is, the wafer processing block 8 is arranged at the rear side of the carrier block 4 when viewed from the second loading port 10. In the center of the wafer processing block 8 in the Y direction, there are a bus 24a to which the carrier robot IR can access, and a central robot CR1 that can load the wafer-processed substrates W on the bus 24a. The central robot CR1 receives the wafer-processed horizontal substrates W one by one from the unloading position OP of the relay device 6, and transports them to the wafer processing chamber. On the other hand, the bus 24b is located behind the central robot CR1 and can be received by the central robot CR1 and the central robot CR2. The central robot CR2 is arranged behind the bus 24b. The central robot CR1 and the central robot CR2 are both substrate transport robots that transport the wafer-processing chamber W in the horizontal position one by one, and can reciprocate in the Z direction. Therefore, the central robot CR1 and the central robot CR2 can access any one of the wafer processing chamber, the supercritical fluid chamber, and the rotation adjustment mechanism SRM that constitute the stack.

[0243] The single-wafer processing block 8 has a plurality of single-wafer processing chambers for drying substrates in a horizontal position one by one. The single-wafer processing chamber of the embodiment includes a supercritical fluid chamber for drying the substrate W by a supercritical fluid. Therefore, the substrate drying chamber mounted on the single-wafer processing device 2 is a supercritical fluid chamber. The supercritical fluid chamber dries the substrate W by, for example, carbon dioxide that becomes a supercritical fluid. Fluids other than carbon dioxide can also be used as supercritical fluids for drying. The supercritical state can be obtained by placing carbon dioxide at an inherent critical pressure and critical temperature. The specific pressure is 7.38 MPa and the temperature is 31°C. In the supercritical state, the surface tension of the fluid becomes zero, so there is no influence of the gas-liquid interface on the circuit pattern on the surface of the substrate W. Therefore, if the substrate W is dried by a supercritical fluid, the so-called pattern collapse in which the circuit pattern collapses on the substrate W can be prevented.

[0244] Fig.29The structure of the single-wafer processing device 2 of the embodiment is described. The supercritical fluid chamber has an entrance for carrying in substrates W before drying treatment and an exit for carrying out substrates W after drying treatment. The entrance is located in the front or rear of the supercritical fluid chamber and has a gate S5 that can be opened and closed freely. The exit is located on the side wall of the supercritical fluid chamber and has a gate S6 that can be opened and closed freely. The gates S5 and S6 are closed during the drying process of the supercritical fluid. The entrance of the supercritical fluid chamber faces the first wet transfer robot AR1 and the second wet transfer robot AR2, and the exit faces the single-wafer transfer area R3.

[0245] The first wet transfer robot AR1 is disposed in an area sandwiched between the rotation adjustment mechanism SRM and the supercritical fluid chamber 48f located on the left side of the wafer transfer area R3. Another robot, the second wet transfer robot AR2, is disposed in an area sandwiched between the wafer processing chamber 48a located on the right side of the wafer transfer area R3 and the supercritical fluid chamber 48e.

[0246] In addition, the wafer processing block 8 is provided with a wafer processing chamber capable of performing liquid chemical processing. The wafer processing chamber is not a supercritical fluid chamber, but a liquid chemical processing chamber having a liquid chemical nozzle for supplying liquid chemical to the substrate W. Two liquid chemical processing chambers are provided in the wafer processing block 8, one of which is a wafer processing chamber 48a. The other is a wafer processing chamber 49d located on the upper side of the rotation adjustment mechanism SRM. The liquid chemical processing chamber 49d is as shown in FIG. Fig.17 The structure described above is located on the upper side of the relay device 6. As the liquid medicine, IPA (isopropyl alcohol) can be used. The liquid medicine treatment chamber has explosion-proof properties to the extent that it can treat flammable IPA. In this way, the liquid medicine treatment chamber can safely perform the required IPA treatment before the drying treatment of the supercritical fluid. However, the liquid medicine used in the liquid medicine treatment chamber of this embodiment is not limited to IPA.

[0247] The positions of the chemical liquid processing chambers can be changed relatively freely, but one of the two chemical liquid processing chambers is located on the right side of the wafer transfer area R3, and the other is located on the left side. With this configuration, it is not necessary for the central robot CR1 or the central robot CR2 located in the wafer transfer area R3 to receive the substrate W after the IPA treatment. That is, since the substrate W after the chemical liquid treatment in the chemical liquid processing chamber is transferred to the supercritical fluid chamber by the first wet transfer robot AR1 or the second wet transfer robot AR2, the substrate W waiting for the IPA treatment will not be retained and cause a decrease in the processing throughput.

[0248] The first wet transfer robot AR1 receives substrates W before drying treatment (substrates W after liquid treatment) in a horizontal position one by one from the single-wafer processing chamber 49d, and carries them into any one of the supercritical fluid chambers located to the left of the single-wafer transfer area R3 from the entrance. Therefore, the substrate transfer hand of the first wet transfer robot AR1 can access all entrances of the single-wafer processing chamber 49d and the supercritical fluid chambers in its vicinity. After each chamber is stacked in the Z direction, the hand can move in the height direction. In addition, each chamber includes a chamber located in front of the first wet transfer robot AR1 and a chamber located behind the first wet transfer robot AR1. Therefore, the hand can face forward or backward.

[0249] The second wet transfer robot AR2 has the same structure as the first wet transfer robot AR1. The second wet transfer robot AR2 receives substrates W before drying (substrates W after chemical treatment) in a horizontal position one by one from the single-wafer processing chamber 48a, and transfers them from the entrance to any of the supercritical fluid chambers located on the left side of the single-wafer transfer area R3. Therefore, the substrate transfer hand of the second wet transfer robot AR2 can receive all the chambers forming the front laminated body and all the chambers forming the rear laminated body.

[0250] The central robot CR1 and the central robot CR2 can access the outlet of the supercritical fluid chamber. The central robot CR1 has a first hand 32a and a second hand 32b. The first hand 32a is located below the second hand 32b. Therefore, the first hand 32a and the second hand 32b are stacked in the Z direction. The first hand 32a carries out the substrate W before drying from the rotation adjustment mechanism SRM and carries it to the single-wafer processing chamber 49d. The second hand 32b carries out the dried substrate W from either the supercritical fluid chamber located on the left side of the single-wafer transfer area R3 or the supercritical fluid chamber located on the right side through the outlet.

[0251] The central robot CR2 has a hand for carrying the dried substrate W. The central robot CR2 receives the dried substrate W from the nearby supercritical fluid chamber and carries it to the bus 24b. The substrate W carried to the bus 24b is carried to the bus 24a by the second hand 32b of the central robot CR1. The transfer robot IR stores the substrate W in the bus 24a in the carrier C.

[0252] <9. Control Department>

[0253] The substrate processing system includes a first control unit 131 related to the control of the batch processing apparatus 1, a second control unit 132 related to the control of the single-wafer processing apparatus 2, and a third control unit 136 related to the control of the relay apparatus 6. Figure 1 In addition, although Figure 1Although not shown in the figure, the storage unit corresponding to each control unit is equipped in the substrate processing system. The control unit 131, the control unit 132, and the control unit 136 are composed of, for example, a CPU (Central Processing Unit). The specific structure of each control unit is not limited. For example, each control unit can be composed of a single processor or a separate processor. In addition, the control of the batch processing device 1 can also be composed of multiple processors, and the same is true for the single-wafer processing device 2 and the relay device 6.

[0254] As control related to the control unit 131, for example, there are controls related to the carrier transport mechanism 11, the first substrate transport mechanism HTR, the first posture conversion mechanism 15, the second substrate transport mechanism WTR, the batch processing units BPU1 to BPU6, and the batch drying chamber DC. As control related to the control unit 132, for example, there are controls related to the center robot CR1, the center robot CR2, each chamber, the first wet transport robot AR1, the second wet transport robot AR2, and the transfer robot IR. And, as control related to the third control unit 136, for example, there are controls related to the full-pitch array substrate transport mechanism STR, the batch standby tank 65, the elevator LF65, the underwater posture conversion unit 55 (the second posture conversion mechanism), the rotation adjustment mechanism SRM, the relay transport mechanism OTR, and the pure water supply device.

[0255] The storage unit stores control-related programs or parameters, etc. The storage unit may be composed of a single device or may be composed of individual devices corresponding to each control unit. In addition, in the substrate processing system of this embodiment, there is no particular limitation on the composition of the device that realizes the storage unit.

[0256] <10. Substrate processing flow>

[0257] Below, while referring to Fig.30 The flow chart of the embodiment is used to explain the substrate processing flow of the embodiment. The substrate processing of the embodiment is completed by first performing batch processing on the substrate W and then performing single-wafer processing. The substrate W of this embodiment is composed as follows: it is transported in the order of the first loading port 9, the stacker block 3, the transfer block 5, the batch processing block 7, the relay device 6, the single-wafer processing area R4, the transfer block 4 and the second loading port 10, and the batch processing and single-wafer processing are completed during this period (refer to Fig.31 , Fig.32 ).

[0258] Step S31: The carrier C containing the unprocessed substrates W arranged in the height direction and in a horizontal posture is placed on the first loading port 9 in the batch processing device 1. Then, the carrier C is stored in the stocker block 3 and placed on the carrier mounting rack 13a. The carrier C may pass through the storage rack 13b before being placed on the carrier mounting rack 13a. The movement of the carrier C at this time is performed by the carrier transport mechanism 11. The first substrate transport mechanism HTR collectively takes out a plurality of substrates W in a horizontal posture from the carrier C placed on the carrier mounting rack 13a and transfers them to the HVC posture conversion unit 23.

[0259] Step S32: The HVC posture conversion unit 23 converts the postures of the received multiple substrates W from the horizontal posture to the vertical posture, and transfers them to the push rod mechanism 25. The HVC posture conversion unit 23 receives another group of substrates W from a carrier C different from the carrier C storing the multiple substrates W after the posture conversion from the first substrate transport mechanism HTR, and converts the postures of the substrates W from the horizontal posture to the vertical posture. The multiple substrates W after the posture conversion are also transferred to the push rod mechanism 25. In this way, the substrates W arranged at the full pitch are batched, and the substrates W for two carriers are arranged at the half pitch in the push rod 25A. The batch generated in this way is transported to the substrate transfer position PP specified in the transfer block 5 by the push rod mechanism 25.

[0260] Step S33: The second substrate transport mechanism WTR receives the batch waiting at the substrate transfer position PP from the push rod mechanism 25, and transfers it to the elevator LF6 waiting above the batch liquid treatment tank CHB6 in the sixth batch processing unit BPU6. At this time, the batch may pass through the drying batch support part 33 before being placed on the elevator LF6. The purpose of transferring the batch to the elevator LF6 is to perform phosphoric acid treatment on the batch. Therefore, the batch only needs to be transferred to any one of the elevators LF2 to LF6 for phosphoric acid treatment. The following description will be given on the transfer of the batch to the elevator LF6.

[0261] After that, the lift LF6 descends to the immersion position and performs batch phosphoric acid treatment on the batch. The batch that has completed the phosphoric acid treatment is returned to the air above the batch chemical solution treatment tank CHB6 by the lift LF6 and is transferred to the second substrate transport mechanism WTR. The second substrate transport mechanism WTR transfers it to the lift LF1 waiting above the batch cleaning treatment tank ONB of the first batch processing unit BPU1. After that, the lift LF1 descends to the immersion position and performs batch cleaning treatment on the batch. In this way, a series of batch treatments are completed. The batch that has completed the batch treatment is returned to the air above by the lift LF1 and is transferred to the second substrate transport mechanism WTR.

[0262] Step S34: The second substrate transport mechanism WTR transfers the batch processed in batches to the lifter LF65 waiting at the transfer position IP. Thereafter, the lifter LF65 descends to the immersion position of the batch standby tank 65, and makes the batch standby in pure water. When a plurality of substrates W are transported from the batch standby tank 65 to the immersion tank 73 of the underwater posture conversion unit 55, first, the lifter LF65 moves the batch from the immersion position to the transfer position IP. The full-pitch array substrate transport mechanism STR receives the substrate row changed to the vertical posture from the lifter LF65 at the transfer position IP, and transports it in the Y direction (rightward). As described above, since the full-pitch array substrate transport mechanism STR cannot transport 50 substrates W constituting a batch at one time, two transport operations are required to transport all the substrates W constituting the batch to the underwater posture conversion unit 55. The second transport operation of the full-pitch array substrate transport mechanism STR is performed after all the substrates W transported in the first transport operation are transported out of the immersion tank 73.

[0263] The push rod 55A located at the bottom of the immersion tank 73 of the underwater posture conversion unit 55 rises to receive the substrate array from the full-pitch array substrate transfer mechanism STR waiting above the immersion tank 73. Thereafter, the push rod 55A is lowered to transfer the substrate array to the inversion chuck 71.

[0264] Fig.31 The figure shows a state where a plurality of substrates W are collectively transported in the above steps S11 to S14.

[0265] Step S35: The inversion chuck 71 receiving the substrate array is rotated left or right, so that the postures of the substrates W that were in the vertical posture are uniformly converted into the horizontal posture.

[0266] Step S36: The third control unit 136 determines whether the substrate W transported to the carry-out position OP of the rotation adjustment mechanism SRM by the relay transport mechanism OTR needs to be rotated. If the substrate W at the carry-out position OP is the first substrate W1 and the rotation of the substrate W is not required, the substrate W is not rotated and the process proceeds to step S38. If the substrate W at the carry-out position OP is the second substrate W2, the process proceeds to step S37.

[0267] Step S37: The rotation adjustment mechanism SRM that has received the substrate W at the carry-out position OP rotates the substrate W on the rotation stage 113 by 180 degrees.

[0268] Step S38: The substrate W received from the single wafer processing chamber 49d by the central robot CR1 is subjected to IPA treatment on the spot. The substrate after the IPA treatment is transferred to the supercritical fluid chamber by the first wet transfer robot AR1.

[0269] Step S39: The substrate W that has been dried in the supercritical fluid chamber is received by the substrate transport hand after drying process of the central robot CR1 or the central robot CR2, and is transported from the supercritical fluid chamber to the bus 24a or the bus 24b. The carrier robot IR receives the processed substrate W from the bus 24a and transfers it to the carrier C placed on the second loading port 10. In this way, the transfer of the substrate W is completed. In addition, when the substrate W is transferred to the bus 24b, the central robot CR1 transfers the substrate W to the bus 24a. After that, the substrate W is transferred to the carrier C via the carrier robot IR.

[0270] Fig.32 The figure shows a state in which the substrates W in the horizontal posture are transported one by one in the above steps S35 to S39.

[0271] Since each step is sometimes performed simultaneously, this point is explained. In step S38, while the substrate W is being dried, the substrate in a horizontal position is continuously transported to the carry-out position OP. The substrate transport to the carry-out position OP is repeated until all of the 11 single-wafer processing chambers of the single-wafer processing apparatus 2 are in use. In addition, when any of the single-wafer processing chambers in use becomes empty, the substrate transport to the carry-out position OP is performed again. In this way, by performing single-wafer substrate processing in parallel, the processing capacity of the substrate processing system can be increased.

[0272] In step S35, after all the plurality of substrates W set to the horizontal posture are transferred from the relay device 6 to the single-wafer processing device 2, the underwater posture conversion unit 55 can receive a new substrate row. At the above time, the full-pitch array substrate transfer mechanism STR receives the substrate row waiting in the batch standby tank 65 from the elevator LF65 and transfers it to the underwater posture conversion unit 55. In this way, according to this embodiment, in order to transfer one batch, step S35 needs to be performed twice. Therefore, step S35 and step S38 may be performed simultaneously.

[0273] If steps S35, S36, S37, S38, and S39 are appropriately repeated, the batch combination can be released and the substrate drying process in the single-wafer processing chamber is completed. If all substrates W constituting the batch are returned to the carrier C placed on the second load port, the substrate processing of this embodiment is completed.

[0274] In addition, the substrate processing of this embodiment is a configuration in which two carriers C are processed at a time. That is, each of the substrates W stored in the first carrier C and the second carrier C placed on the first loading port 9 of the batch processing apparatus 1 is stored in the third carrier C and the fourth carrier C placed on the second loading port 10 of the single-wafer processing apparatus 2.

[0275] In step S35, all the substrates W whose postures are changed come from the first carrier C. Therefore, the relay device 6 transfers only the first substrates W1 stored in the first carrier C to the single wafer processing device 2. The transfer robot IR stores all the first substrates W1 of the first carrier C thus transferred in the third carrier C.

[0276] If all the substrates W of the first carrier C are transferred from the underwater posture conversion unit 55, step S35 is executed again. In this case, all the substrates W after posture conversion are from the second carrier C. Therefore, the relay device 6 transfers only the second substrates W2 stored in the second carrier C to the single-wafer processing device 2 this time. The transfer robot IR stores all the second substrates W2 of the second carrier C transferred in this way in the fourth carrier C.

[0277] In this way, the substrates W stored in the first carrier C and the substrates W stored in the second carrier C are not mixed, but are stored in each of the third carrier C and the fourth carrier C.

[0278] The substrate W held by the rotation adjustment mechanism SRM is received by the central robot CR1 and finally transferred to the carrier C by the transfer robot IR. During this period, the substrate is transported while changing its orientation in a fixed pattern. For example, if the notch of the substrate W held by the rotation adjustment mechanism SRM faces forward, the notch passes through each chamber or each bus while facing forward or backward, and finally returns to the carrier C with the notch facing backward. In the chamber, depending on the type, it is different whether the substrate before processing is half-rotated to end the processing or the substrate before processing is not rotated to end the processing. However, each of the substrates held by the rotation adjustment mechanism SRM is subjected to the same processing until it reaches the carrier C, and as a result, the substrates W after substrate processing stored in the carrier C are in a state where the direction of the notch is all uniform.

[0279] In the embodiment, since the substrates W with different notches are transported to the transport position OP by the relay transport mechanism OTR, if the rotation adjustment of the substrates is not performed, the first substrate W1 and the second substrate W2 are stored in the carrier C in a state where the notches are in different directions. However, in the present embodiment, since the rotation adjustment mechanism SRM is provided to selectively rotate only the second substrate W2, the second substrate W2 is processed individually in a state where the notches are in the same direction as the first substrate W1. Therefore, there is no difference in the notches between the first substrate W1 after the substrate processing and the second substrate W2 after the substrate processing.

[0280] As described above, according to the configuration of the embodiment, in a substrate processing system configured by connecting a batch processing apparatus 1 and a single-wafer processing apparatus 2 with a relay apparatus 6, the requirements pursued by the substrate processing system can be achieved. The relay apparatus 6 of the present invention has a rotation adjustment mechanism SRM, and the rotation adjustment mechanism SRM has a rotating table 113 that can adjust the position of the notch of the substrate W at the transfer position IP of the substrate obtained by the relay apparatus 6, or the transfer position OP of the substrate discharged by the relay apparatus 6. The orientation of the substrate W discharged from the relay apparatus 6 to the single-wafer processing apparatus 2 can be arbitrarily changed by the rotation adjustment mechanism SRM. By changing the operation of the rotation adjustment mechanism SRM, the orientation of the substrate W transferred to the single-wafer processing apparatus 2 can be made consistent in a predetermined direction.

[0281] Furthermore, according to the present invention, a substrate processing system can be provided that can make the orientation of the substrates W consistent in a predetermined direction even when the substrates W are arranged face to face to form a batch. If two substrate groups are combined and arranged in a manner that the device surface of the first substrate W1 and the device surface of the second substrate W2 face each other, a batch in which the first substrate W1 and the second substrate W2 are arranged alternately is formed. Thereafter, if the batch is divided into the first substrate W1 and the second substrate W2, a situation occurs in which the orientation of the notch of the first substrate W1 and the orientation of the notch of the second substrate W2 are different from each other. According to the above configuration, the orientation of the notch of the first substrate W1 and the orientation of the notch of the second substrate W2 can be made consistent by rotating the substrates by the rotation adjustment mechanism SRM in a manner in which the rotation angle of the first substrate W1 and the rotation angle of the second substrate W2 are different from each other.

[0282] According to this embodiment, the substrate W moves up and down between the upper first position P1, the middle position P3, and the lower second position P2, and can receive the substrate W, rotate the substrate W, and discharge the substrate W. According to this configuration, the configuration of the rotation adjustment mechanism SRM can be further simplified.

[0283] According to the present embodiment, the substrate W located at the first position P1 is shifted so that the center thereof coincides with the center position of the turntable 113 by the positioning chuck 115. With this configuration, the orientation of the substrate W can be reliably set to a predetermined orientation, and by placing the substrate W at an ideal position, the substrate W can be more reliably transported by the central robot CR1.

[0284] The plurality of support pins 111 are synchronously moved in and out and are arranged at positions away from the plurality of extensions 113b extending from the rotation center of the rotation table 113 at the initial position. With this configuration, the rotation adjustment mechanism SRM including the plurality of support pins 111 and a mechanism for rotating the substrate can be reliably configured.

[0285] The present invention is not limited to the configurations of the above-described embodiments, and can be implemented in various modified forms as described below.

[0286] <Variation 1>

[0287] The substrate processing system of the embodiment has a structure with one relay device 6, but the present invention is not limited to the above structure. It can also be set as a structure with multiple single-wafer processing devices 2 for one batch processing device 1, and a relay device 6 for each single-wafer processing device 2. The substrate processing system of this variation has a structure with multiple relay devices 6.

[0288] <Variation 2>

[0289] The substrate processing system of the embodiment dries the substrate W by using a supercritical fluid chamber, but the present invention is not limited to the above configuration. The substrate W may also be dried by spin drying.

[0290] <Variation 3>

[0291] The substrate processing system of the embodiment is configured such that the turntable 113 rotates the second substrate W2 by 180°, but the present invention is not limited to this configuration and may be configured such that the first substrate W1 is rotated by 180° without rotating the second substrate W2.

[0292] <Variation 4>

[0293] The substrate processing system of the embodiment is configured not to rotate the first substrate W1, but the present invention is not limited to the configuration. For example, the first substrate W1 may be rotated by -n° and the second substrate may be rotated by 180-n°. With such a configuration, even in a substrate processing system in which the central robot CR1 receives a substrate from an inclined direction of n° relative to the rotation adjustment mechanism SRM, the substrate W can be stored in the carrier C as in the embodiment.

[0294] <Variation 5>

[0295] The rotation adjustment mechanism SRM of the substrate processing system of the embodiment is as follows Fig.33 As described above, a sensor 120 for detecting the position of the notch of the substrate W may be provided. For example, a reflective optical sensor or a transmissive optical sensor is used as the sensor 120. According to this configuration, since the sensor 120 detects the position of the notch of the substrate W on the rotating stage 113, it is possible to measure and correct a slight deviation in orientation that is visible between substrates.

[0296] <Variation 6>

[0297] The rotation adjustment mechanism SRM of the substrate processing system of the embodiment is set at the carry-out position OP of the relay device 6, but the present invention is not limited to the above configuration. The rotation adjustment mechanism SRM may also be set at the carry-in position IP side. Specifically, the carry-in position IP side is a position sandwiched by the underwater posture conversion unit 55 and the relay transport mechanism OTR. According to this variation, before the substrate W is held by the relay transport mechanism OTR, the notch is aligned. As a result, the configuration at the carry-out position OP of the relay device 6 can be simplified.

[0298] [Explanation of symbols]

[0299] 1 Batch Processing Unit

[0300] 1A 1st housing

[0301] 1B Third wall

[0302] 2 Single-Chip Processing Device

[0303] 2A Second housing

[0304] 2B 4th wall

[0305] 3 Stacker Blocks

[0306] 4 Transfer Block

[0307] 5 Transfer block

[0308] 6 Relay device

[0309] 6A Relay Housing

[0310] 7 Batch Blocks

[0311] 8 monolithic processing blocks

[0312] 9 Loading port 1

[0313] 10 2nd loading port (2nd carrier rack)

[0314] 11 Carrier transport mechanism

[0315] 13a Carrier loading rack (first carrier loading rack)

[0316] 15. First posture conversion mechanism

[0317] 48a Single Wafer Processing Chamber

[0318] 48b Single Wafer Processing Chamber

[0319] 48c Single Wafer Processing Chamber

[0320] 55 underwater posture conversion unit (second posture conversion mechanism)

[0321] 65 batch standby slots

[0322] 71 Reverse chuck

[0323] 111 Support pin

[0324] 112 Support pin telescopic mechanism

[0325] 113 Rotating table

[0326] 114 Rotation axis

[0327] 114m Rotary drive motor

[0328] 115 Positioning chuck

[0329] 115a Mobile mechanism

[0330] 116 Positioning chuck support

[0331] 117 Water supply nozzle

[0332] 118a Water supply pipe

[0333] 118b Water supply pipe moving mechanism

[0334] 119 Protective parts

[0335] 120 Sensors

[0336] 131 Control Department

[0337] 132 Control Department

[0338] 136 Control Department

[0339] BPU1 Batch Processing Unit 1 (Batch Processing Tank)

[0340] BPU2 Batch Processing Unit 2 (Batch Processing Tank)

[0341] BPU3 Batch Processing Unit 3 (Batch Processing Tank)

[0342] BPU4 Batch Processing Unit No. 4 (Batch Processing Tank)

[0343] BPU5 Batch Processing Unit No. 5 (Batch Processing Tank)

[0344] BPU6 Batch Processing Unit No. 6 (Batch Processing Tank)

[0345] CR center robot (single-chip transfer mechanism)

[0346] HTR 1st substrate transport mechanism (substrate transport mechanism)

[0347] IP move location

[0348] IR Delivery Robot

[0349] OP moves out of position

[0350] OTR relay transport agency

[0351] P1 1st position

[0352] P2 2nd position

[0353] P3 Middle position

[0354] STR Full pitch array substrate transport mechanism (relay transport mechanism)

[0355] W substrate

[0356] WTR Second transport mechanism (central transport mechanism).

Claims

1. A substrate processing system, characterized in that: The substrate processing system continuously performs batch processing of uniformly processing multiple substrates and single-wafer processing of processing substrates one by one, and has: A batch processing device for batch processing; at least one single-wafer processing device for single-wafer processing of substrates that have been processed in batches; and at least one relay device defines two positions: an in-position for receiving batch-processed substrates from the batch processing device and an out-position for transferring the substrates received at the in-position to the single-wafer processing device; and The batch processing device comprises: At least one batch treatment tank capable of uniformly immersing a plurality of substrates in a vertical position; The single-chip processing device comprises: Multiple single-wafer processing chambers capable of drying horizontal substrates one by one; The relay device comprises: A posture conversion mechanism, which can convert the plurality of substrates from a vertical posture to a horizontal posture on the side of the carrying-in position; a relay transport mechanism, the relay transport mechanism being disposed between the carry-in position and the carry-out position and being capable of transporting substrates in a horizontal position one by one along a substrate transport path to the carry-out position; and The rotation adjustment mechanism includes a rotation table capable of adjusting the position of the notch of the substrate by rotating the substrates one by one in a horizontal posture at the carrying-in position side or the carrying-out position.

2. The substrate processing system according to claim 1, characterized in that: The batch processing device comprises: a substrate holding mechanism that supports a first substrate group in a vertical posture and a second substrate group in a vertical posture, and supports a batch of the first substrates and the second substrates that are combined in such a manner that a device surface of a first substrate constituting the first substrate group and a device surface of a second substrate constituting the second substrate group face each other; The relay device comprises: a substrate group distinguishing mechanism capable of distinguishing a batch into the first substrate and the second substrate; The posture conversion mechanism converts the first substrate and the second substrate, which are separated, from a vertical posture to a horizontal posture. When the orientation of the notch of the first substrate converted to the horizontal orientation by the orientation conversion mechanism is different from the orientation of the notch of the second substrate, The rotation adjustment mechanism makes the orientation of the notch in the first substrate coincide with the orientation of the notch in the second substrate by rotating the second substrate at an angle different from the rotation angle of the first substrate.

3. The substrate processing system according to claim 1, characterized in that: The rotation adjustment mechanism comprises: A substrate lifting mechanism capable of lifting the substrate between a first upper position and a second lower position; The substrate lifting mechanism receives the substrate from the relay transport mechanism by raising the substrate held by the relay transport mechanism to the first position at a position between the first position and the second position, and places the received substrate on the turntable by lowering it to the second position.

4. The substrate processing system according to claim 3, characterized in that: The rotation adjustment mechanism includes a substrate shift mechanism that shifts the substrate so that the center of the substrate located at the first position coincides with the rotation center of the turntable.

5. The substrate processing system according to claim 3, characterized in that: The substrate lifting mechanism includes a plurality of pins that are synchronously advanced and retracted and are disposed at positions avoiding a plurality of extensions extending from a rotation center of the turntable located at an initial position.

6. The substrate processing system according to claim 1, characterized in that: The rotation adjustment mechanism includes a pure water supply mechanism for supplying pure water to the received substrate.

7. The substrate processing system according to claim 1, characterized in that: The rotation adjustment mechanism includes a sensor that detects a position of a notch of the substrate on the rotation stage.

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