A glass substrate and a method of manufacturing the same

Abstract

The application discloses a glass substrate and a manufacturing method thereof, and relates to the technical field of semiconductor packaging. The manufacturing method of the glass substrate comprises the following steps: glass core plate opening, first seed layer forming, first mask forming, through hole metalization, first mask and first seed layer covered by the first mask removing, hole plugging and first resin layer forming, second seed layer forming, second mask forming, inner circuit layer forming, second mask and second seed layer covered by the second mask removing, second resin layer forming, through holes being opened on the second resin layers of the first surface and the second surface, third seed layer forming, third mask forming, circuit layer forming, third mask and third seed layer covered by the third mask removing, repeating the steps of forming the second resin layer to the step of removing the third mask and the third seed layer covered by the third mask at least once, resist layer making, and ball planting, so as to reduce the warping of the substrate and improve the reliability of the substrate.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a glass substrate and a method for manufacturing the same. Background Technology

[0002] In existing technologies, organic substrates are generally used to interconnect packaged chips and devices with PCBs, so as to support and protect the chips while providing data exchange paths for the chips.

[0003] In today's era of rapid development in network and information technology, technologies such as AI, 5G, cloud computing, and autonomous driving are advancing at a high speed. This has led to an explosive growth in people's demand for data, placing increasingly higher demands on chips for data processing, data transmission, and data storage. To meet the demands of massive data processing, the development of global integrated circuit technology to improve data processing capabilities currently follows two main paths: one is following Moore's Law, utilizing advanced technology nodes to continuously advance integrated circuits towards larger-size System-on-Chip (SoC); the other is through three-dimensional heterogeneous integration, which uses high-density three-dimensional heterogeneous integration technology to package chips with different IPs, different technology nodes, and different materials into a single package, thereby improving the data processing capabilities of a single package. The larger the SoC size, the more chips integrated into a single package, and the larger the required substrate size. As the substrate size increases, substrate warpage increases significantly, having an increasingly greater impact on the packaging process and the reliability of the packaged device. Summary of the Invention

[0004] The purpose of this application is to provide a glass substrate and a method for manufacturing the same, so as to reduce the warpage of the substrate while improving the bonding force between the internal circuit layer and the glass core board, thereby improving the reliability of the substrate.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] A glass substrate, comprising:

[0007] A glass core sheet having a plurality of through holes, the glass core sheet including a first surface and a second surface opposite to each other along its thickness direction;

[0008] A first seed layer covers the inner wall of the through hole and the area around the opening of the through hole;

[0009] A metal layer that covers the first seed layer, and a portion of the metal layer located around the opening of the via forms an annular metal pad;

[0010] A plugging material, wherein the plugging material fills the through hole;

[0011] The first resin layer is provided on both the first and second surfaces of the glass core board, and the annular metal pad is not covered by the first resin layer. The annular metal pad is flush with the height of the first resin layer or the annular metal pad is higher than the first resin layer.

[0012] A second seed layer and an inner circuit layer are stacked together, wherein the second seed layer is located on the side surface of the first resin layer away from the glass core board, and the inner circuit layer covers the side surface of the second seed layer away from the glass core board.

[0013] At least one multilayer composite structure is disposed on the side of the inner circuit layer away from the glass core plate. The multilayer composite structure includes a second resin layer, a third seed layer and a circuit layer disposed sequentially in the direction away from the glass core plate. The second resin layer has a through hole. The third seed layer and the circuit layer are stacked on the side of the second resin layer away from the glass core plate.

[0014] A solder resist layer is disposed on the side of the multilayer composite structure opposite to the glass core board;

[0015] Solder balls, the solder balls being disposed on the solder resist layer ， The bottom of the solder ball penetrates the solder mask layer and contacts the outermost circuit layer.

[0016] In one implementation, the plugging material is a resin, which includes ABF, RCC, and / or a photosensitive dry film insulating layer material, or the plugging material is the same material as the first resin layer; or,

[0017] The plugging material is a metal; the metal includes copper, tungsten and / or titanium.

[0018] In one implementation, the first seed layer, the second seed layer, and / or the third seed layer include at least one sub-metal layer; or,

[0019] The first seed layer, the second seed layer, and / or the third seed layer include multiple sub-metal layers, and the materials of the multiple sub-metal layers are different.

[0020] In one implementation, the sub-metal layer is made of titanium, copper, or tungsten.

[0021] In one implementation, the solder balls include chip solder balls and substrate solder balls. The chip solder balls are disposed on a solder resist layer on one side of the glass chip, and the substrate solder balls are disposed on a solder resist layer on the other side of the glass chip. The chip solder balls are used for bonding to the chip, and the substrate solder balls are used for bonding to the printed circuit board.

[0022] The chip solder ball has a flat surface on the side facing away from the glass core plate; and / or, the substrate solder ball has a spherical surface on the side facing away from the glass core plate.

[0023] In the glass substrate provided in this application, the via-sealing material does not employ traditional liquid ink vacuum via-sealing or vacuum screen printing, but instead uses resin or metal via-sealing, thereby improving the reliability of the glass substrate. Furthermore, the high-rigidity support structure provided by the glass core board for the overall glass substrate, combined with the high bonding force of the via-sealing resin to the glass core board and inner layer metal circuitry, forms a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the glass core board surface. The high-rigidity support structure provided by the glass core board for the overall glass substrate can reduce the overall warpage of the substrate, thereby avoiding solder ball bridging during flip-chip bonding, preventing short circuits, and preventing open circuits caused by the inability of some chip solder balls to solder to the substrate pads. It can also prevent large stresses between the chip and the substrate caused by severe substrate warpage, which can lead to problems such as solder ball cracking, substrate cracking, and chip cracking.

[0024] A method for manufacturing a glass substrate, comprising:

[0025] The glass core board has openings, with multiple through holes formed in the glass core board, and the glass core board has opposing first and second surfaces;

[0026] A first seed layer is formed on the surface of the glass core plate with through holes.

[0027] A first mask is formed on the surface of the structure formed in the previous step. The first mask covers the other parts of the first and second surfaces of the structure formed in the previous step, except for the inner wall of the through hole and the area around the opening of the through hole.

[0028] Through-hole metallization: A metal layer is formed on the inner wall of the through-hole and in the area around the opening of the through-hole in the glass core board, and the metal layer in the area around the opening of the through-hole forms an annular metal pad.

[0029] Remove the first mask and the first seed layer covered by the first mask;

[0030] The holes are plugged and a first resin layer is formed by filling the through holes of the glass core plate with resin or metal, and the plugging resin is pressed onto both the first and second surfaces of the glass core plate to form a first resin layer on the first and second surfaces of the glass core plate.

[0031] Thin the first resin layer so that the annular metal pad is exposed outside the first resin layer;

[0032] A second seed layer is formed on the surface of the first resin layer on both sides of the glass core plate;

[0033] A second mask is formed on the first and second surfaces of the structure formed in the previous step, and the second mask has a hollow structure.

[0034] An inner circuit layer is formed within the hollow structure of the second mask;

[0035] Remove the second mask and the second seed layer covered by the second mask;

[0036] A second resin layer is formed by pressing resin onto the first and second surfaces of the structure formed in the previous step.

[0037] Through holes are formed in the second resin layer on the first and second surfaces;

[0038] A third seed layer is formed on the surface of the second resin layer on both sides of the glass core plate;

[0039] A third mask is formed on the first and second surfaces of the structure formed in the previous step, and the third mask has a hollow structure.

[0040] A circuit layer is formed within the hollow structure of the third mask;

[0041] Remove the third mask and the third seed layer covered by the third mask;

[0042] Repeat the steps at least once to form the second resin layer until the step of removing the third mask and the third seed layer covered by the third mask;

[0043] Solder resist layers are formed on the first and second surfaces of the structure formed in the previous step, and the solder resist layers have connection holes corresponding to the circuit layers;

[0044] Ball placement involves soldering balls onto the first and / or second surfaces of the structure formed in the previous step.

[0045] In one implementation, forming the first seed layer includes: forming the first seed layer on the surface of the glass core plate with through-holes by deposition; and / or,

[0046] The formation of the second seed layer includes: forming a second seed layer on the surface of the first resin layer on both sides of the glass core plate by deposition; and / or,

[0047] The formation of the third seed layer includes: forming a third seed layer on the surface of the second resin layer on both sides of the glass core plate by deposition.

[0048] In one implementation, the hole plugging step specifically involves filling the through-hole of the glass core board with resin and pressing the resin onto both the first and second surfaces of the glass core board, so that the resin fills the through-hole of the glass core board while forming a first resin layer on the first and second surfaces of the glass core board, and the annular metal pad is exposed on the first resin layer.

[0049] In one implementation, after the step of thinning the first resin layer, the annular metal pad is either flush with the height of the first resin layer or higher than the first resin layer.

[0050] In one implementation, a first mask is formed on the surface of the structure formed in the previous step, specifically by using photolithography to create an electroplating mask on the surface of the structure formed in the previous step; and / or,

[0051] A second mask is formed on the first and second surfaces of the structure formed in the previous step. Specifically, the second mask is formed on the first and second surfaces of the structure formed in the previous step by using photolithography to create an electroplating mask.

[0052] In the glass substrate manufactured using the above-described method, the via-filling material is not the traditional liquid ink vacuum via-filling or vacuum screen printing via-filling, but rather resin or metal via-filling, thereby improving the reliability of the glass substrate. Furthermore, the high-rigidity support structure provided by the glass core board for the overall glass substrate, combined with the high bonding force of the via-filling resin to the glass core board and inner metal circuitry, forms a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the glass core board surface. The high-rigidity support structure provided by the glass core board for the overall glass substrate can reduce the overall warpage of the substrate, thereby avoiding solder ball bridging during flip-chip fabrication, preventing short circuits, and preventing open circuits caused by the inability of some chip solder balls to solder to the substrate pads. It can also prevent large stresses between the chip and the substrate caused by severe substrate warpage, which can lead to problems such as solder ball cracking, substrate cracking, and chip cracking. Attached Figure Description

[0053] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0054] Figure 1 A flowchart illustrating a method for manufacturing a glass substrate according to an embodiment of this application;

[0055] Figure 2 A cross-sectional view of the glass core board after through holes are made, as provided in the embodiments of this application;

[0056] Figure 3 A top view of the glass core board after through holes have been made, as provided in the embodiments of this application;

[0057] Figure 4 This is a schematic diagram showing the formation of the first seed layer according to an embodiment of this application;

[0058] Figure 5 for Figure 4 A magnified view of a portion of region A in the middle;

[0059] Figure 6 This is a schematic diagram of the formation of the first mask provided in an embodiment of this application;

[0060] Figure 7 This is a schematic diagram of the through-hole after metallization, provided in an embodiment of this application;

[0061] Figure 8 This is a schematic diagram showing the result after removing the first mask, provided in an embodiment of this application.

[0062] Figure 9 This is a cross-sectional view provided in an embodiment of this application after removing the first seed layer;

[0063] Figure 10 A top view provided for an embodiment of this application after removing the first seed layer covered by the first mask;

[0064] Figure 11 This is a schematic diagram showing the hole-plugging step provided in an embodiment of this application;

[0065] Figure 12 This is a schematic diagram showing the hole-plugging step as provided in another embodiment of this application;

[0066] Figure 13 This is a cross-sectional view of the first resin layer after thinning, provided in an embodiment of this application.

[0067] Figure 14 This is a top view of the first resin layer after thinning, provided in an embodiment of this application.

[0068] Figure 15 This is a schematic diagram showing the formation of the second seed layer as provided in an embodiment of this application;

[0069] Figure 16 This is a schematic diagram showing the formation of the second mask according to an embodiment of this application;

[0070] Figure 17 This is a schematic diagram of the internal circuit layer after its formation, provided in an embodiment of this application.

[0071] Figure 18 This is a schematic diagram showing the result after removing the second mask, provided in an embodiment of this application.

[0072] Figure 19This is a schematic diagram showing the removal of the second seed layer covered by the second mask, provided in an embodiment of this application.

[0073] Figure 20 This is a schematic diagram showing the formation of the second resin layer according to an embodiment of this application;

[0074] Figure 21 This is a schematic diagram showing the second resin layer after a through hole has been formed, as provided in an embodiment of this application.

[0075] Figure 22 This is a schematic diagram showing the formation of the third seed layer as provided in an embodiment of this application;

[0076] Figure 23 This is a schematic diagram showing the formation of the third mask according to an embodiment of this application;

[0077] Figure 24 This is a schematic diagram of the circuit layer after its formation, provided in an embodiment of this application.

[0078] Figure 25 This is a schematic diagram showing the result after removing the third mask, provided in an embodiment of this application.

[0079] Figure 26 A schematic diagram showing the removal of the third seed layer covered by the third mask, provided for an embodiment of this application;

[0080] Figure 27 This is a schematic diagram showing the formation of multiple circuit layers according to an embodiment of this application;

[0081] Figure 28 This is a schematic diagram showing the solder mask layer after its formation, provided in an embodiment of this application.

[0082] Figure 29 This is a schematic diagram of a glass substrate provided in an embodiment of this application.

[0083] Figure label:

[0084] 1-Glass core board, 1a-Through hole, 2-First seed layer, 3-First mask, 4-Metal layer, 4a-Annular metal pad, 5-First resin layer, 6-Second seed layer, 7-Second mask, 8-Inner circuit layer, 8a-Hole pad, 9-Second resin layer, 9a-Through hole, 10-Third seed layer, 11-Third mask, 12-Circuit layer, 13-Solder resist layer, 14-Chip solder ball, 15-Substrate solder ball. Detailed Implementation

[0085] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0086] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0087] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise expressly specified. "Several" means one or more, unless otherwise expressly specified.

[0088] In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0089] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0090] In existing technologies, with the explosive growth in demand for data, the requirements for data processing, data transmission, and data storage on chips are constantly increasing. The increase in the size of organic substrates leads to a significant increase in substrate warpage, which can easily cause solder ball bridging during flip-chip fabrication, resulting in short circuits, and situations where some chip solder balls cannot be soldered to the substrate pads, creating open circuits. Furthermore, severe substrate warpage can also generate significant stress between the chip and the substrate. When temperatures change, this stress can cause reliability issues such as solder ball cracking, substrate cracking, and chip cracking.

[0091] In view of the above, if Figure 29As shown, this application provides a glass substrate, which can be fabricated using any of the glass substrate manufacturing methods described below. The glass substrate includes a glass core plate 1, a first seed layer 2, a metal layer 4, a via-plugging material, a first resin layer 5, a second seed layer 6, an internal circuit layer 8, a multilayer composite structure, a solder mask layer 13, and solder balls. The first seed layer 2, metal layer 4, via-plugging material, first resin layer 5, second seed layer 6, internal circuit layer 8, multilayer composite structure, and solder mask layer 13 are symmetrically arranged on both sides of the glass core plate 1.

[0092] The glass core plate 1 has multiple through holes 1a and includes a first surface and a second surface opposite to each other along its thickness direction. The first surface can be the upper surface, and the second surface can be the lower surface. The through holes 1a penetrate the thickness of the glass core plate 1, with one opening of the through hole 1a located on the first surface and the other opening of the through hole 1a located on the second surface. A first seed layer 2 covers the inner wall of the through holes 1a and the area around the openings of the through holes 1a in the glass core plate 1, that is, the areas around the openings on both the first and second surfaces are covered by the first seed layer 2.

[0093] Metal layer 4 covers the first seed layer 2, and the portion of metal layer 4 located around the opening of via 1a forms an annular metal pad 4a. The annular metal pad 4a is used to connect the inner circuit layer 8. Metal layer 4 can be a single layer of metal, and the material of the single layer of metal can be copper, tungsten, or titanium, etc. Of course, metal layer 4 can also include multiple sub-metal layers, and the materials of the multiple sub-metal layers can be the same or different; for example, the materials of the sub-metal layers can be copper, tungsten, or titanium. The thickness of the multiple sub-metal layers can be the same or different.

[0094] A plugging material is used to fill the through-hole 1a. The plugging material can be resin or metal. If metal is used, the metal can be copper, tungsten, or titanium. If resin is used, the resin can be ABF (ABFAjinomoto Build-up Film), RCC (Resin Coated Copper), and / or a photosensitive dry film insulating layer material. Furthermore, the plugging material is the same material as the first resin layer 5, which simplifies the processing by allowing resin to fill the through-hole simultaneously with the formation of the first resin layer 5.

[0095] Both the first and second surfaces of the glass core board 1 are provided with a first resin layer 5, and the annular metal pad 4a is not covered by the first resin layer 5. That is, the annular metal pad 4a is exposed on the first resin layer 5, meaning the first resin layer 5 does not cover the annular metal pad 4a, to facilitate the connection between the annular metal pad 4a and the inner circuit layer 8. The annular metal pad 4a is flush with the height of the first resin layer 5 or higher than the first resin layer 5, specifically, the annular metal pad 4a is slightly higher than the first resin layer 5. In this way, the inner circuit layer is manufactured on the entire flat surface without the requirement for through-hole plating, making the process simple and convenient.

[0096] The second seed layer 6 and the inner circuit layer 8 are stacked. The second seed layer 6 is located on the side of the first resin layer 5 facing away from the glass core board 1, and the inner circuit layer 8 covers the side of the second seed layer 6 facing away from the glass core board 1. The portion of the inner circuit layer 8 opposite to the through hole 1a and its surrounding area is the hole pad 8a, which is used to connect the circuit layer 12.

[0097] A multi-layer composite structure is disposed on the side of the inner circuit layer 8 facing away from the glass core board 1. When multiple multi-layer composite structures are disposed on the upper or lower side of the glass core board 1, the multiple multi-layer composite structures are stacked sequentially. Alternatively, a single multi-layer composite structure can also be disposed on the upper or lower side of the glass core board 1. The multi-layer composite structure includes a second resin layer 9, a third seed layer 10, and a circuit layer 12 disposed sequentially along the direction facing away from the glass core board 1. The second resin layer 9 has through holes 9a. The third seed layer 10 and the circuit layer 12 are stacked on the side of the second resin layer 9 facing away from the glass core board 1. The multiple through holes 9a can be respectively opposite to multiple hole pads 8a, so as to facilitate the connection between the hole pads 8a and the circuit layer 12 through the through holes 9a.

[0098] A solder resist layer 13 is disposed on the side of the multilayer composite structure facing away from the glass core board 1. The solder resist layer 13 has connection holes corresponding to the circuit layer 12, which are used for connection with solder balls. Solder balls are disposed on the solder resist layer. The solder balls may include chip solder balls 14 and substrate solder balls 15, wherein the chip solder balls 14 are disposed on the solder resist layer 13 on one side of the glass chip, and the substrate solder balls 15 are disposed on the solder resist layer 13 on the other side of the glass chip. The chip solder balls 14 are used for bonding to the chip, and the substrate solder balls 15 are used for bonding to the printed circuit board.

[0099] In the aforementioned glass substrate, the via-filling material does not employ traditional liquid ink vacuum via-filling or vacuum screen printing, but rather resin or metal via-filling, thereby improving the reliability of the glass substrate. Furthermore, the high-rigidity support structure provided by the glass core board for the overall glass substrate, combined with the high bonding force of the via-filling resin to the glass core board and inner metal circuitry, forms a high-strength bond between the metal layer and the glass core board, solving the problem of poor direct bonding strength between the metal layer and the glass core board surface. The high-rigidity support structure provided by the glass core board 1 for the overall glass substrate can reduce the overall warpage of the substrate, thereby avoiding solder ball bridging during flip-chip bonding, preventing short circuits, and preventing open circuits caused by the inability of some chip solder balls to solder to the substrate pads. It can also prevent large stresses between the chip and the substrate caused by severe substrate warpage, which can lead to problems such as solder ball cracking, substrate cracking, and chip cracking.

[0100] The chip solder ball 14 is used to bond with the chip. The side of the chip solder ball 14 facing away from the glass core plate 1 has a flat surface to facilitate bonding with the chip.

[0101] The substrate solder ball 15 is used to bond with the printed circuit board. The side of the substrate solder ball 15 facing away from the glass core board 1 is spherical to facilitate bonding with the printed circuit board.

[0102] In the above technical solution, the first resin layer 5 may include ABF (ABF: Ajinomoto Build-up Film), RCC, and / or photosensitive dry film insulating layer material. The second resin layer 9 may include ABF (ABF: Ajinomoto Build-up Film), RCC, and / or photosensitive dry film insulating layer material.

[0103] The first seed layer 2, the second seed layer 6, and / or the third seed layer 10 each include at least one sub-metal layer. That is, the first seed layer 2, the second seed layer 6, and / or the third seed layer 10 can be a single-layer metal, and the material of the single-layer metal can be copper, tungsten, or titanium, etc. Of course, the first seed layer 2, the second seed layer 6, and / or the third seed layer 10 can also include multiple sub-metal layers. The materials of the multiple sub-metal layers can be the same or different; for example, the materials of the sub-metal layers can be copper, tungsten, or titanium. The thicknesses of the multiple sub-metal layers can be the same or different.

[0104] Please see Figure 1 This application also provides a method for manufacturing a glass substrate, comprising:

[0105] S1: The glass core plate 1 has openings, and multiple through holes 1a are opened on the glass core plate 1. The glass core plate 1 has a first surface and a second surface opposite to each other.

[0106] like Figure 2 and Figure 3As shown, specifically, along the thickness direction, the glass core plate 1 has opposing first and second surfaces, both of which are perpendicular to the thickness direction of the glass core plate 1. Multiple through holes 1a penetrating the thickness of the glass core plate 1 are formed on the glass core plate 1, with one opening of each through hole 1a located on the first surface and the other opening located on the second surface.

[0107] In this step, a laser can be used to create the hole.

[0108] S2: Forming a first seed layer 2, forming a first seed layer 2 on the surface of the glass core plate 1 with through hole 1a;

[0109] like Figure 4 and Figure 5 As shown, a first seed layer 2 is formed on the surface of the glass core plate 1 after the hole is opened in step S1. The first seed layer 2 covers the first surface, the second surface, and the inner wall of the through hole 1a of the glass core plate 1. Optionally, the first seed layer 2 can be formed by deposition, electroplating, or other methods.

[0110] In this way, a regular, dense and smooth first seed layer 2 is formed on the surface of the glass core plate 1. Its better brightness and level distribution enhance the adhesion between the electrolyte and the metal and promote the surface uniformity of the deposit.

[0111] S3: A first mask 3 is formed on the surface of the structure formed in the previous step. The first mask 3 covers the other parts of the first and second surfaces of the structure formed in the previous step, except for the inner wall of the through hole 1a and the area around the opening of the through hole 1a.

[0112] like Figure 6 As shown, a first mask 3 is formed on the surface of the structure formed in step S2. Specifically, the first mask 3 is formed on both the first and second surfaces of the structure formed in step S2. The first surface can be the upper surface, and the second surface can be the lower surface. The first mask 3 covers all parts of the first and second surfaces of the structure formed in the previous step, except for the inner wall of the through hole 1a and the area around the opening of the through hole 1a. That is, the first mask 3 has a perforated structure. The perforated structure of the first mask 3 is opposite to the opening of the through hole 1a and its surrounding area, so that the inner wall of the through hole 1a and the area around the opening of the through hole 1a are not covered by the first mask 3.

[0113] In this step, a first mask 3 can be formed on the surface of the structure formed in the previous step using photolithography to create an electroplating mask. Specifically, a dry film is first pressed onto the first and second surfaces of the structure formed in the previous step, and then exposure and development are performed sequentially to finally form the first mask 3. The dry film is made of a photosensitive polymer material. Of course, other methods can also be used to form the first mask 3, and this is not limited here.

[0114] S4: Through-hole metallization, a metal layer 4 is formed on the inner wall of the through-hole 1a of the glass core board 1 and in the area around the opening of the through-hole 1a, and the metal layer 4 in the area around the opening of the through-hole 1a forms an annular metal pad 4a.

[0115] like Figure 7 As shown, in this step, a metal layer 4 is formed on the inner wall of the through hole 1a and around the opening of the through hole 1a in the glass core board 1. Specifically, the metal layer 4 can be formed on the inner wall of the through hole 1a and around the opening of the through hole 1a by electroplating, deposition, or other methods. The portion of the metal layer 4 located around the opening of the through hole 1a is a ring-shaped metal pad 4a, which is used to connect the inner circuit layer 8.

[0116] In this step, metal layer 4 can be a single layer of metal, and the material of the single layer of metal can be copper, tungsten, or titanium, etc. Of course, metal layer 4 can also include multiple sub-metal layers, and the materials of the multiple sub-metal layers can be the same or different. For example, the materials of the sub-metal layers can be copper, tungsten, or titanium. The thickness of the multiple sub-metal layers can be the same or different.

[0117] S5: Remove the first mask 3 and the first seed layer 2 covered by the first mask 3;

[0118] like Figures 8-10 As shown, the first mask 3 and the first seed layer 2 covered by the first mask 3 are removed, leaving the metal layer 4 and the first seed layer 2 covered by the metal layer 4.

[0119] This step can be divided into two steps: removing the first mask 3 and the first seed layer 2 covered by the first mask 3. Specifically, the first mask 3 can be removed first, followed by the removal of the first seed layer 2 covered by the first mask 3. Alternatively, the first mask 3 can be peeled off directly by a stripping method, and then the first seed layer 2 covered by the first mask 3 can be removed by wet etching or laser etching.

[0120] S6: Plug the hole and form a first resin layer 5. Fill the through hole 1a of the glass core board 1 with resin or metal, and press the resin on both the first and second surfaces of the glass core board 1 to form a first resin layer 5 on the first and second surfaces of the glass core board 1. The annular metal pad 4a is exposed on the first resin layer 5.

[0121] like Figure 11 As shown, in this step, the through-hole 1a is filled with resin, that is, the through-hole 1a is filled with resin. Or, as... Figure 12 As shown, in this step, the through-hole 1a is filled with metal, that is, the through-hole 1a is filled with metal. For example... Figure 11 As shown, resin is pressed onto both the first and second surfaces of the glass core board 1 to form a first resin layer 5 on the first and second surfaces of the glass core board 1, and the annular metal pad 4a is exposed on the first resin layer 5.

[0122] When the through hole 1a is filled with metal, the through hole 1a can be filled with metal first, and then resin can be pressed onto both the first and second surfaces of the glass core plate 1 to form a first resin layer 5. The filling metal and the metal layer 4 can be made of the same or different materials. The filling metal can be made of copper, tungsten, or titanium, etc.

[0123] When resin is filled into the through-hole 1a, the resin filling can be completed simultaneously with the first resin layer 5. That is, resin is pressed onto both the first and second surfaces of the glass core board 1, so that the resin fills the through-hole 1a of the glass core board 1 while the first resin layer 5 is formed on both the first and second surfaces of the glass core board 1. The filling resin may include ABF (Ajinomoto Build-up Film), RCC (Resin Coated Copper), and / or photosensitive dry film insulating layer material.

[0124] S6': Thin the first resin layer 5 so that the annular metal pad is exposed outside the first resin layer.

[0125] The annular metal pad 4a is exposed outside the first resin layer 5, meaning the first resin layer 5 does not cover the annular metal pad 4a, to facilitate the connection between the annular metal pad 4a and the inner circuit layer 8. The first resin layer 5 and the annular metal pad 4a can be flush, or the annular metal pad 4a can be slightly higher than the first resin layer 5.

[0126] like Figure 13 and Figure 14 As shown, since the thickness of the first resin layer 5 is uncontrollable during the resin lamination process, after plugging the hole and forming the first resin layer 5 in step S6, the process further includes step S6': thinning the first resin layer 5 to expose the annular metal pads. This step may also involve polishing the surface of the first resin layer 5. The thickness of the thinned first resin layer 5 is 3μm-5μm. Specifically, the first resin layer 5 can be thinned using a grinding wheel or by chemical mechanical polishing. Further, after thinning, CMP (Chemical Mechanical Polishing) can be performed to remove minor surface scratches. For example, the thickness of the thinned first resin layer 5 is 3μm, 3.5μm, 4μm, 4.5μm, or 5μm.

[0127] S7: Form a second seed layer 6, and form a second seed layer 6 on the surface of the first resin layer 5 on both sides of the glass core plate 1;

[0128] like Figure 15As shown, a second seed layer 6 is formed on the surface of the structure formed in step S7. Specifically, the second seed layer 6 is formed on the surface of the first resin layer 5 of the structure formed in the previous step that faces away from the glass core plate 1, and the second seed layer 6 covers the surface of the first resin layer 5 that faces away from the glass core plate 1. Optionally, the second seed layer 6 can be formed by deposition, electroplating, or other methods.

[0129] S8: A second mask 7 is formed on the first and second surfaces of the structure formed in the previous step. The second mask 7 has a hollow structure.

[0130] like Figure 16 As shown, a second mask 7 is formed on the surface of the structure formed in step S7. Specifically, a second mask 7 is formed on both the first and second surfaces of the structure formed in step S7. The first surface can be the upper surface, and the second surface can be the lower surface. The second mask 7 covers the first and second surfaces of the structure formed in the previous step. The second mask 7 has a cutout structure, and the cutout structure of the second mask 7 is used to form the inner circuit layer 8.

[0131] In this step, a second mask 7 can be formed on the surface of the structure formed in the previous step using photolithography to create an electroplating mask. Specifically, a dry film is first pressed onto the first and second surfaces of the structure formed in the previous step, and then exposed and developed sequentially to finally form the second mask 7. The dry film is made of a photosensitive polymer material. Of course, other methods can also be used to form the second mask 7, which are not limited here.

[0132] S9: An inner circuit layer 8 is formed within the hollow structure of the second mask 7;

[0133] like Figure 17 As shown, in this step, an inner circuit layer 8 is formed within the hollow structure of the second mask 7. Specifically, the inner circuit layer 8 can be formed within the hollow structure of the second mask 7 by electroplating, deposition, or other methods. The portion of the inner circuit layer 8 opposite to the via 1a and its surrounding area is a via pad 8a, used to connect the circuit layer 12. The via pad 8a has the same thickness as other locations of the inner circuit layer 8.

[0134] In this step, the material of the inner circuit layer 8 can be copper, tungsten, or titanium.

[0135] S10: Remove the second mask 7 and the second seed layer 6 covered by the second mask 7;

[0136] like Figures 18-19 As shown, the second mask 7 and the second seed layer 6 covered by the second mask 7 are removed, leaving the inner circuit layer 8 and the second seed layer 6 covered by the inner circuit layer 8.

[0137] This step can be divided into two steps: removing the second mask 7 and the second seed layer 6 covered by the second mask 7. Specifically, the second mask 7 can be removed first, followed by the removal of the second seed layer 6 covered by the second mask 7. Alternatively, the second mask 7 can be peeled off directly by a stripping method, and then the second seed layer 6 covered by the second mask 7 can be removed by wet etching or laser etching.

[0138] S11: Forming a second resin layer 9, the second resin layer 9 is formed by pressing resin onto the first and second surfaces of the structure formed in the previous step;

[0139] like Figure 20 As shown, resin is pressed and filled onto the side of the inner circuit layer 8 of the structure formed in the previous step that is away from the glass core plate 1 to form a second resin layer 9. That is, resin is pressed onto the first surface and the second surface of the structure formed in the previous step to form the second resin layer 9.

[0140] S12: A through hole 9a is formed in the second resin layer 9 on the first surface and the second surface;

[0141] like Figure 21 As shown, multiple through holes 9a extending through the thickness of the second resin layer 9 are formed. These through holes 9a can be respectively aligned with multiple aperture pads 8a, facilitating the connection of the aperture pads 8a to the circuit layer 12 through the through holes 9a. Preferably, the through holes 9a can be formed on the second resin layer 9 using a laser process.

[0142] S13: Forming a third seed layer 10, forming a third seed layer 10 on the surface of the second resin layer 9 on both sides of the glass core plate 1;

[0143] like Figure 22 As shown, a third seed layer 10 is formed on the surface of the structure formed in step S12. Specifically, the third seed layer 10 is formed on the surface of the second resin layer 9 of the structure formed in the previous step that faces away from the glass core plate 1. The third seed layer 10 is required on both the upper and lower sides of the structure formed in the previous step, and the third seed layer 10 covers the surface of the second resin layer 9 that faces away from the glass core plate 1. Optionally, the third seed layer 10 can be formed by deposition, electroplating, or other methods.

[0144] S14: A third mask 11 is formed on the first and second surfaces of the structure formed in the previous step. The third mask 11 has a hollow structure.

[0145] like Figure 23As shown, a third mask 11 is formed on the surface of the structure formed in step S13. Specifically, a third mask 11 is formed on both the first and second surfaces of the structure formed in step S13. The first surface can be the upper surface, and the second surface can be the lower surface. The third mask 11 covers the first and second surfaces of the structure formed in the previous step. The third mask 11 has a cutout structure, and the cutout structure of the third mask 11 is used to form the circuit layer 12.

[0146] In this step, a third mask 11 can be formed on the surface of the structure formed in the previous step using photolithography to create an electroplating mask. Specifically, a dry film is first pressed onto the first and second surfaces of the structure formed in the previous step, and then exposure and development are performed sequentially to finally form the third mask 11. The dry film is made of a photosensitive polymer material. Of course, other methods can also be used to form the third mask 11, and this is not limited here.

[0147] S15: A circuit layer 12 is formed within the hollow structure of the third mask 11;

[0148] like Figure 24 As shown, in this step, a circuit layer 12 is formed within the hollow structure of the third mask 11. Specifically, the circuit layer 12 can be formed within the hollow structure of the third mask 11 by electroplating, deposition, or other methods.

[0149] In this step, the material of the circuit layer 12 can be copper, tungsten, or titanium.

[0150] S16: Remove the third mask 11 and the third seed layer 10 covered by the third mask 11;

[0151] like Figures 25-26 As shown, the third mask 11 and the third seed layer 10 covered by the third mask 11 are removed, and the circuit layer 12 and the third seed layer 10 covered by the circuit layer 12 are retained.

[0152] This step can be divided into two steps to remove the third mask 11 and the third seed layer 10 covered by the third mask 11. That is, first remove the third mask 11, and then remove the third seed layer 10 covered by the third mask 11. Specifically, the third mask 11 can be directly peeled off by a stripping method, and then the third seed layer 10 covered by the third mask 11 can be removed by wet etching or laser etching.

[0153] S17: Repeat step 9 to form the second resin layer at least once to remove the third mask 11 and the third seed layer 10 covered by the third mask 11;

[0154] like Figure 27 As shown, steps S11-S16 are repeated at least once to fabricate the multilayer circuit layer 12.

[0155] S18: A solder resist layer 13 is formed on the first and second surfaces of the structure formed in the previous step, and the solder resist layer 13 has connection holes corresponding to the circuit layer 12.

[0156] like Figure 28 As shown, in this step, a solder resist layer 13 is made on the first and second surfaces of the structure formed in the previous step. That is, a solder resist layer 13 is made on the outermost circuit layer 12 on the upper and lower sides of the structure formed in the previous step, and the solder resist layer 13 has a connection hole corresponding to the circuit layer 12. The connection hole is used to connect with solder balls.

[0157] S19: Ball placement, soldering balls onto the first and / or second surfaces of the structure formed in the previous step.

[0158] Specifically, chip solder balls 14 and substrate solder balls 15 can be respectively disposed on the first and second surfaces of the structure formed in the previous step. The chip solder balls 14 are used to bond with the chip, and the substrate solder balls 15 are used to bond with the printed circuit board.

[0159] like Figure 29 As shown, chip solder balls 14 are disposed on the first surface of the structure formed in the previous step, and substrate solder balls 15 are disposed on the second surface of the structure formed in the previous step. The bottom of the solder balls corresponds to the connection holes. The chip solder balls 14 are used for bonding with the chip, and the side of the chip solder balls 14 facing away from the glass core plate 1 has a flat surface to facilitate bonding with the chip. The substrate solder balls 15 are used for bonding with the printed circuit board, and the side of the substrate solder balls 15 facing away from the glass core plate 1 has a spherical surface to facilitate bonding with the printed circuit board.

[0160] In the glass substrate manufactured using the above-described method, the via-filling material is not the traditional liquid ink vacuum via-filling or vacuum screen printing via-filling, but rather resin or metal via-filling, thereby improving the reliability of the glass substrate. Furthermore, the high-rigidity support structure provided by the glass core board 1 for the entire glass substrate, combined with the high bonding force of the via-filling resin to the glass core board 1 and the inner metal circuitry, forms a high-strength bond between the metal layer 4 and the glass core board 1, solving the problem of poor direct bonding strength between the metal layer 4 and the surface of the glass core board 1. The high-rigidity support structure provided by the glass core board 1 for the entire glass substrate can reduce the overall warpage of the substrate, thereby avoiding solder ball bridging during flip-chip fabrication, preventing short circuits, and preventing open circuits caused by the inability of some chip solder balls to solder to the substrate pads. It can also prevent large stresses between the chip and the substrate caused by severe substrate warpage, which can lead to problems such as solder ball cracking, substrate cracking, and chip cracking.

[0161] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0162] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A glass substrate, characterized in that, include: A glass core sheet having a plurality of through holes, the glass core sheet including a first surface and a second surface opposite to each other along its thickness direction; A first seed layer covers the inner wall of the through hole and the area around the opening of the through hole; A metal layer that covers the first seed layer, and a portion of the metal layer located around the opening of the via forms an annular metal pad; A plugging material, wherein the plugging material fills the through hole; The first resin layer is provided on both the first and second surfaces of the glass core board, and the annular metal pad is not covered by the first resin layer. The annular metal pad is flush with the height of the first resin layer or the annular metal pad is higher than the first resin layer. A second seed layer and an inner circuit layer are stacked together, wherein the second seed layer is located on the side surface of the first resin layer away from the glass core board, and the inner circuit layer covers the side surface of the second seed layer away from the glass core board. At least one multilayer composite structure is disposed on the side of the inner circuit layer away from the glass core plate. The multilayer composite structure includes a second resin layer, a third seed layer and a circuit layer disposed sequentially along the direction away from the glass core plate. The second resin layer has a through hole. The third seed layer and the circuit layer are stacked on the side of the second resin layer away from the glass core plate. The portion of the inner circuit layer opposite to the through hole and its surrounding area is a hole pad, which is used to connect the circuit layer. A solder resist layer is disposed on the side of the multilayer composite structure opposite to the glass core board; Solder ball, wherein the solder ball is disposed on the solder resist layer, and the bottom of the solder ball penetrates the solder resist layer and contacts the outermost circuit layer; The plugging material is resin, or the plugging material is metal; Alternatively, the plugging material is the same as the material of the first resin layer. When the through hole is filled with resin, the filling of the resin and the first resin layer are completed simultaneously. Resin is pressed onto both the first and second surfaces of the glass core board so that the resin fills the through hole of the glass core board while the first resin layer is formed on the first and second surfaces of the glass core board.

2. The glass substrate according to claim 1, characterized in that, The resin includes ABF, RCC and / or photosensitive dry film insulating layer material; The metals include copper, tungsten, and / or titanium.

3. The glass substrate according to claim 1, characterized in that, The first seed layer, the second seed layer, and / or the third seed layer each include at least one sub-metal layer; or, The first seed layer, the second seed layer, and / or the third seed layer include multiple sub-metal layers, and the materials of the multiple sub-metal layers are different.

4. The glass substrate according to claim 3, characterized in that, The sub-metal layer is made of titanium, copper, or tungsten.

5. The glass substrate according to claim 1, characterized in that, The solder balls include chip solder balls and substrate solder balls. The chip solder balls are disposed on the solder resist layer on one side of the glass core board, and the substrate solder balls are disposed on the solder resist layer on the other side of the glass core board. The chip solder balls are used for bonding with chips, and the substrate solder balls are used for bonding with printed circuit boards.

6. A method for manufacturing a glass substrate, characterized in that, include: The glass core board has openings, with multiple through holes formed in the glass core board, and the glass core board has opposing first and second surfaces; A first seed layer is formed on the surface of the glass core plate with through holes. A first mask is formed on the surface of the structure formed in the previous step. The first mask covers the other parts of the first and second surfaces of the structure formed in the previous step, except for the inner wall of the through hole and the area around the opening of the through hole. Through-hole metallization: A metal layer is formed on the inner wall of the through-hole and in the area around the opening of the through-hole in the glass core board, and the metal layer in the area around the opening of the through-hole forms an annular metal pad. Remove the first mask and the first seed layer covered by the first mask; The holes are plugged and a first resin layer is formed. Resin or metal is filled into the through holes of the glass core plate, and resin is pressed onto both the first and second surfaces of the glass core plate to form a first resin layer on the first and second surfaces of the glass core plate. When the plugging material is the same as the material of the first resin layer, the resin is filled into the through holes of the glass core plate by pressing. Thin the first resin layer so that the annular metal pad is exposed outside the first resin layer; A second seed layer is formed on the surface of the first resin layer on both sides of the glass core plate; A second mask is formed on the first and second surfaces of the structure formed in the previous step, and the second mask has a hollow structure. An inner circuit layer is formed within the pattern of the second mask; the portion of the inner circuit layer opposite to the via and its surrounding area is a via pad, which is used to connect the circuit layer. Remove the second mask and the second seed layer covered by the second mask; A second resin layer is formed by pressing resin onto the first and second surfaces of the structure formed in the previous step. Through holes are formed in the second resin layer on the first and second surfaces; A third seed layer is formed on the surface of the second resin layer on both sides of the glass core plate; A third mask is formed on the first and second surfaces of the structure formed in the previous step, and the third mask has a hollow structure. A circuit layer is formed within the hollow structure of the third mask; Remove the third mask and the third seed layer covered by the third mask; Repeat the steps at least once to form the second resin layer until the step of removing the third mask and the third seed layer covered by the third mask; Solder resist layers are formed on the first and second surfaces of the structure formed in the previous step, and the solder resist layers have connection holes corresponding to the circuit layers; Ball placement involves soldering balls onto the first and / or second surfaces of the structure formed in the previous step.

7. The method for manufacturing a glass substrate according to claim 6, characterized in that, The formation of the first seed layer includes: forming a first seed layer on the surface of the glass core plate with through-holes by deposition; and / or, The formation of the second seed layer includes: forming a second seed layer on the surface of the first resin layer on both sides of the glass core plate by deposition; and / or, The formation of the third seed layer includes: forming a third seed layer on the surface of the second resin layer on both sides of the glass core plate by deposition.

8. The method for manufacturing a glass substrate according to claim 6, characterized in that, The specific steps of plugging the holes are as follows: filling the through holes of the glass core board with resin, and pressing the resin onto both the first and second surfaces of the glass core board, so that the resin fills the through holes of the glass core board while forming a first resin layer on the first and second surfaces of the glass core board.

9. The method for manufacturing a glass substrate according to claim 6, characterized in that, After the step of thinning the first resin layer, the annular metal pad is either flush with the height of the first resin layer or higher than the first resin layer.

10. The method for manufacturing a glass substrate according to claim 6, characterized in that, A first mask is formed on the surface of the structure formed in the previous step, specifically by using photolithography to create an electroplating mask on the surface of the structure formed in the previous step; and / or, A second mask is formed on the first and second surfaces of the structure formed in the previous step. Specifically, the second mask is formed on the first and second surfaces of the structure formed in the previous step by using photolithography to create an electroplating mask.

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