Crosstalk suppression driving circuit and device

Abstract

The invention relates to the technical field of electronics, and discloses a crosstalk suppression driving circuit and equipment, and the circuit comprises a current injection module which is connected with a power device and a driving power supply end, and is used for injecting a current into a grid electrode of the power device when the power device is detected to be turned off, so as to reduce the voltage change rate when the power device is turned off; and the current absorption module is respectively connected with the power device and the driving power supply end, and absorbs current from a grid electrode of the power device when detecting that the power device is conducted so as to slow down the voltage change rate when the power device is conducted. Positive voltage pulses brought by grid voltages of the complementary power devices during turn-on are effectively reduced, mistaken turn-on of the complementary power devices is avoided, negative voltage pulses brought to the grid voltages of the complementary power devices during turn-off are effectively reduced, the complementary power devices are prevented from being broken down, crosstalk is suppressed from the source, and the crosstalk rate is increased. The problems of low negative voltage peak resistance and easy breakdown are solved.

Description

Technical Field

[0001] The present invention relates to the field of electronic technology, and in particular to a crosstalk suppression driving circuit and equipment. Background Art

[0002] In a bridge circuit, there will be a crosstalk problem between the two switch tubes of the upper and lower bridge arms. Compared with Si (silicon) power devices, SiC MOSFET (silicon carbide field effect transistor) has a faster switching speed and a more serious crosstalk problem, so a special drive circuit needs to be designed for SiC MOSFET. In the prior art, the peak value of the positive gate voltage can be reduced by increasing the negative gate voltage. The negative gate voltage can only be set within a range. In addition, increasing the negative gate voltage reduces the resistance to the negative voltage spike caused by the turn-off of the complementary tube, which is easy to be broken down. Summary of the invention

[0003] In view of this, the present invention provides a crosstalk suppression driving circuit and device to solve the problem of low negative voltage spike resistance and easy breakdown.

[0004] In a first aspect, the present invention provides a crosstalk suppression driving circuit, the circuit comprising:

[0005] A current injection module, which is connected to the power device and the driving power supply terminal respectively, and is used to inject current into the gate of the power device when it is detected that the power device is turned off, so as to slow down the voltage change rate when the power device is turned off;

[0006] The current absorption module is connected to the power device and the driving power supply terminal respectively. When it is detected that the power device is turned on, the current is absorbed from the gate of the power device to slow down the voltage change rate when the power device is turned on.

[0007] The crosstalk suppression driving circuit provided by the present invention has a current injection module that injects current into the gate of the power device when the power device is turned off, thereby reducing the voltage change rate when the power device is turned on, and a current absorption module that absorbs current from the gate of the power device when the power device is turned on, thereby reducing the voltage change rate when the power device is turned on. In addition, the positive voltage pulse caused by the gate voltage of the complementary power device when turned on is effectively reduced, thereby avoiding misleading turn-on of the complementary power device, and the negative voltage pulse caused by the gate voltage of the complementary power device when turned off is effectively reduced, thereby avoiding the complementary power device from being broken down, suppressing the crosstalk from the source, and solving the problem of low resistance to negative voltage spikes and easy breakdown.

[0008] In an optional implementation, the current injection module includes:

[0009] A charging module, the charging module is connected to the driving power supply terminal and the source of the power device, and is used to inject current into the gate of the power device;

[0010] The injection control module is connected to the driving power supply terminal, the gate of the power device and the charging module, and is used to control the charging module to inject current into the gate of the power device when it is detected that the power device is turned off.

[0011] In an optional embodiment, the charging module includes:

[0012] A first diode, wherein an anode of the first diode is connected to the driving power supply terminal, and a cathode of the first diode is connected to the injection control module;

[0013] A first capacitor, wherein a first end of the first capacitor is connected to a cathode of the first diode, and a second end of the first capacitor is connected to a source of the power device;

[0014] A first resistor, wherein a first end of the first resistor is connected to the cathode of the first diode, and a second end of the first resistor is connected to the source of the power device.

[0015] In an optional implementation, the injection control module includes:

[0016] A first driving resistor, a first end of the first driving resistor is connected to a driving power supply end;

[0017] A first switch tube, wherein a control end of the first switch tube is connected to a second end of the first driving resistor;

[0018] a second diode, the anode of the second diode being connected to the cathode of the first diode, and being configured to be turned on when the power device is turned off;

[0019] a second resistor, wherein a first end of the second resistor is connected to the cathode of the second diode, and a second end of the second resistor is connected to the source of the first switch tube;

[0020] A third diode, wherein an anode of the third diode is connected to the drain of the first switch tube, and a cathode of the third diode is connected to the gate of the power device.

[0021] In an optional implementation, the current absorption module includes:

[0022] A filter module, the filter module is connected to the source of the power device, and is used to filter the source of the power device when it is detected that the power device is turned on, so as to output a turn-on signal;

[0023] The absorption control module is connected to the gate of the power device, the driving power supply terminal and the filter module respectively, and is used to receive the conduction signal and absorb current from the gate of the power device.

[0024] In an optional implementation, the filtering module includes:

[0025] a third resistor, wherein a first end of the third resistor is connected to the source of the power device, and a second end of the third resistor is connected to the absorption control module;

[0026] A second capacitor, wherein a first end of the second capacitor is connected to a second end of the third resistor, and a second end of the second capacitor is grounded.

[0027] The crosstalk suppression driving circuit provided by the present invention prevents the situation in which excessive current is absorbed and power devices are damaged.

[0028] In an optional implementation, the absorption control module includes:

[0029] A second driving resistor, a first end of the second driving resistor is connected to the driving power supply end;

[0030] A second switch tube, the gate of the second switch tube is connected to the second end of the second driving resistor, and is used to be turned on when the power device is turned on;

[0031] a fourth diode, wherein an anode of the fourth diode is connected to the gate of the power device, and a cathode of the fourth diode is connected to the drain of the second switch tube;

[0032] a fifth diode, wherein an anode of the fifth diode is connected to a source of the second switch tube;

[0033] A fourth resistor, wherein a first end of the fourth resistor is connected to the cathode of the fifth diode, and a second end of the fourth resistor is connected to the second end of the third resistor.

[0034] In an optional implementation, the absorption control module further includes:

[0035] A third capacitor, wherein a first end of the third capacitor is connected to a first end of the third resistor, and a second end of the third capacitor is connected to a second end of the third resistor.

[0036] In an optional implementation, the crosstalk suppression driving circuit further includes:

[0037] a fifth resistor, wherein a first end of the fifth resistor is connected to a source of the power device in the upper bridge arm;

[0038] The inductor has a first end connected to the second end of the fifth resistor, and a second end of the inductor is grounded.

[0039] The crosstalk suppression driving circuit provided by the present invention analyzes the crosstalk influence of the upper bridge arm power device on the lower bridge arm power device when the upper bridge arm power device is turned off and turned on based on simulation observation.

[0040] In a second aspect, the present invention provides a crosstalk suppression driving device, the crosstalk suppression driving device comprising the crosstalk suppression driving circuit of the first aspect and any optional implementation manner thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 It is a conventional upper and lower bridge arm bridge circuit structure diagram;

[0043] Figure 2 is a structural diagram of a crosstalk suppression driving circuit according to an embodiment of the present invention;

[0044] Figure 3 It is another conventional upper and lower bridge arm bridge circuit structure diagram;

[0045] Figure 4 is a structural diagram of another crosstalk suppression driving circuit according to an embodiment of the present invention;

[0046] Figure 5 is a structural diagram of another crosstalk suppression driving circuit according to an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0049] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0051] refer to Figure 1 , Figure 1 It is a conventional upper and lower bridge arm bridge circuit structure diagram, such as Figure 1 In (a), when the upper bridge arm power device Q1 is turned on, V ds2 The voltage change triggers the C gd2 When the current flows through the gate resistor R g2 When the voltage spike is generated on the gate of the lower bridge arm power device Q2 In V gs2 In the worst case, if this voltage spike is higher than the gate threshold voltage, the lower bridge arm power device Q2 will be mis-turned on. Figure 1 In (b), V ds2 The voltage change triggers the gd2 When the current flows through the gate resistor R g2 When the voltage is negative, a negative voltage peak V' is generated on the gate of the lower bridge arm power device Q2. gp2 , in V gs2 In the worst case, if this voltage spike exceeds the maximum negative gate voltage acceptable to the semiconductor device, it will cause the gate to break down. Just as the turn-on and turn-off of the SiC MOSFET in the upper arm will affect the complementary SiC MOSFET in the lower arm through crosstalk, the turn-on and turn-off of the SiC MOSFET in the lower arm will also cause crosstalk to the SiC MOSFET in the upper arm.

[0052] In view of the crosstalk suppression problem of the SiC MOSFETs in the upper and lower bridge arms in the above bridge circuit, there are three ways to suppress the crosstalk problem in the related art.

[0053] The first is to increase the negative gate voltage. This method can reduce the peak value of the positive gate voltage, but the negative gate voltage can only be set within a range, and increasing the negative gate voltage reduces the ability to resist the negative voltage spike caused by the complementary tube turning off, which is easy to be broken down. The second is the Miller clamping method. This method is very mature and has been widely used in gate drive integrated circuits. However, the Miller clamping method can suppress positive spike voltages, but cannot suppress the impact of negative spike voltages. The third is multi-level gate voltage. This method optimizes the gate voltage by adding transistors and diodes to generate multi-level gate voltages, but in order to avoid false triggering and negative voltage breakdown, power supplies and additional control signals are usually introduced, resulting in a more complex circuit structure.

[0054] In this regard, an embodiment of the present invention provides a crosstalk suppression driving circuit, which injects current into the gate of the power device when the power device is turned off, and absorbs current from the gate of the power device when the power device is turned on, thereby slowing down the voltage change rate when the power device is turned off and turned on, thereby solving the problem of low resistance to negative voltage spikes and easy breakdown.

[0055] In this embodiment, a crosstalk suppression driving circuit is provided. Figure 2 As shown, Figure 2 is a structural diagram of a crosstalk suppression driving circuit according to an embodiment of the present invention, Figure 2 The power device Q takes MOS tube as an example, and can also be other power devices, such as IGBT (Insulate-Gate Bipolar Transistor), GTO (Gate Turn-Off Thyristor), GTR (Power Transistor), etc. The crosstalk suppression driving circuit includes:

[0056] A current injection module 10, the current injection module 10 is connected to the power device Q and the driving power supply terminal V respectively, and is used to inject current into the gate of the power device Q when it is detected that the power device Q is turned off, so as to slow down the voltage change rate when the power device Q is turned off;

[0057] The current absorption module 20 is connected to the power device Q and the driving power supply terminal V respectively. When it is detected that the power device Q is turned on, the current absorption module 20 absorbs current from the gate of the power device Q to slow down the voltage change rate when the power device Q is turned on.

[0058] refer to Figure 3 , Figure 3 This is another conventional upper and lower bridge arm bridge circuit structure diagram. Taking the upper bridge arm power device Q1 receiving a trigger signal and turning on as an example, at this time, the lower bridge arm power device Q2 is affected by the crosstalk. Formula (1) quantitatively calculates the crosstalk voltage.

[0059]

[0060] It can be deduced from equation (1) that when the upper bridge arm power device Q1 is turned on, V ds2 Instantaneous increase, C gd2 With V ds2 decrease with the increase of That is, reduce V ds2 The rate of increase can reduce V gs2 When the upper bridge arm power device Q1 is turned off, V ds2 Instantaneous decrease, C gd2 With V ds2 decreases and increases monotonically; decrease V ds2 The rate of decrease, the corresponding C at the same time gd2 It also decreases, which can reduce V ds2 The effect of reducing V ds2 The rate of change of V ds2 The range of change will not change C gd2 The value range of This can reduce V gs2 . Reduce V ds2 The rate of change can reduce the crosstalk voltage V gs2 According to formula (2), it can be considered that the reduction It can also reduce It can be considered that reducing the upper arm power device Q1 It can also reduce the crosstalk voltage V gs2 .

[0061]

[0062] Therefore, the current is absorbed from the gate of the upper bridge arm power device Q1 when it is turned on, and the current is injected into the gate of the upper bridge arm power device Q1 when it is turned off to reduce the Then reduce the crosstalk voltage V of the lower bridge arm gs2 Similarly, it can be considered that the lower bridge arm power device Q2 absorbs current from its gate when it is turned on, and injects current into its gate when it is turned off to reduce Then reduce the crosstalk voltage V gs1 .

[0063] The crosstalk suppression driving circuit provided in the present embodiment has a current injection module that injects current into the gate of the power device when the power device is turned off, thereby reducing the voltage change rate when the power device is turned off; and a current absorption module that absorbs current from the gate of the power device when the power device is turned on, thereby reducing the voltage change rate when the power device is turned on. In addition, the positive voltage pulse caused by the gate voltage of the complementary power device when turned on is effectively reduced, thereby avoiding misleading turn-on of the complementary power device, and effectively reducing the negative voltage pulse caused by the gate voltage of the complementary power device when turned off, thereby avoiding the breakdown of the complementary power device. The crosstalk is suppressed from the source, and there is no need to change the voltage at the driving power supply end, thereby solving the problems of low resistance to negative voltage spikes and easy breakdown, as well as the inability to increase the negative spike voltage. In high-frequency applications, the influence of parasitic parameters in the hardware circuit will be more serious, and there is no need to introduce an additional power supply to cause a more complicated circuit structure.

[0064] In some optional embodiments, such as Figure 4 As shown, the current injection module 10 includes:

[0065] A charging module 11, which is connected to the driving power supply terminal V and the source of the power device Q, and is used to inject current into the gate of the power device Q;

[0066] The injection control module 12 is connected to the driving power supply terminal V, the gate of the power device Q and the charging module 11, and is used to control the charging module 11 to inject current into the gate of the power device Q when it is detected that the power device Q is turned off.

[0067] When the power device Q is turned on, energy is stored through the charging module 11 . When the power device Q is turned off, the injection control module 12 detects that the charging module 11 is controlled to inject current into the gate of the power device Q.

[0068] In some optional embodiments, such as Figure 4 As shown, the charging module 11 includes:

[0069] A first diode Ds, wherein an anode of the first diode Ds is connected to the driving power supply terminal V, and a cathode of the first diode Ds is connected to the injection control module 12;

[0070] A first capacitor Cb1, wherein a first end of the first capacitor Cb1 is connected to a cathode of the first diode Ds, and a second end of the first capacitor Cb1 is connected to a source of the power device Q;

[0071] The first resistor Rb1 has a first end connected to the cathode of the first diode Ds, and a second end connected to the source of the power device Q.

[0072] When the driving power supply terminal is at a positive voltage, the first capacitor Cb1 is charged based on the first diode Ds. When the driving power supply terminal is at a negative voltage, the first capacitor Cb1 injects current into the gate of the power device Q.

[0073] In some optional embodiments, such as Figure 4 As shown, the injection control module 12 includes:

[0074] A first driving resistor Rpg1, a first end of the first driving resistor Rpg1 is connected to a driving power supply end V;

[0075] A first switch tube M1, wherein the gate of the first switch tube M1 is connected to the second end of the first driving resistor Rpg1;

[0076] a second diode Df1, wherein the anode of the second diode Df1 is connected to the cathode of the first diode Ds, and is configured to be turned on when the power device Q is turned off;

[0077] A second resistor Rf1, wherein a first end of the second resistor Rf1 is connected to a cathode of the second diode Df1, and a second end of the second resistor Rf1 is connected to a source of the first switch tube M1;

[0078] The third diode D3 has an anode connected to the drain of the first switch tube M1 and a cathode connected to the gate of the power device Q.

[0079] The first switch tube M1 is a PMOS tube (referring to a MOS tube with an n-type substrate and a p-channel, which transports current by the flow of holes). When the driving power supply end is a positive voltage, the gate voltage of the first switch tube M1 is higher than the source voltage, and the first switch tube M1 is turned off. When the driving power supply end is a negative voltage, the gate voltage of the first switch tube M1 is lower than the source voltage. At this time, the first switch tube M1 is turned on, and the electricity stored in the first capacitor Cb1 is transmitted to the gate of the power device Q through the second diode Df1, the second resistor Rf1, the first switch tube M1 and the third diode D3, thereby injecting current into the gate of the power device Q.

[0080] It should be noted that when the power device Q is turned on, the first capacitor Cb1 discharges a small amount through the first resistor Rb1. Since the amount of discharge is small, the third diode D3 is used to control the flow direction of the injected current to ensure the accuracy of the injected current. The drain of the power device Q is connected to the power supply terminal VCC.

[0081] In some optional embodiments, such as Figure 4 As shown, the current absorption module 20 includes:

[0082] A filter module 21, the filter module 21 is connected to the source of the power device Q, and is used to filter the source of the power device Q when it is detected that the power device Q is turned on, so as to output a turn-on signal;

[0083] The absorption control module 22 is respectively connected to the gate of the power device Q, the driving power supply terminal V and the filter module 21, and is used to receive a conduction signal and absorb current from the gate of the power device Q.

[0084] When the driving power supply end is a positive voltage, the power device Q is turned on, and the filtering module 21 filters the source of the power device Q to provide a conduction condition for the absorption control module 22, so that after the absorption control module 22 is turned on, current is absorbed from the gate of the power device Q.

[0085] In some optional embodiments, such as Figure 4 As shown, the filtering module 21 includes:

[0086] a third resistor Rb2, wherein a first end of the third resistor Rb2 is connected to the source of the power device Q, and a second end of the third resistor Rb2 is connected to the absorption control module 22;

[0087] The second capacitor Cb2 has a first end connected to the second end of the third resistor Rb2, and a second end of the second capacitor Cb2 is grounded.

[0088] When the power device Q is turned on, the source voltage of the power device Q is filtered by a low-pass filter circuit formed by the third resistor Rb2 and the second capacitor Cb2, thereby providing a turn-on condition for the absorption control module 22.

[0089] In some optional embodiments, such as Figure 4 As shown, the absorption control module 22 includes:

[0090] A second driving resistor Rpg2, a first end of the second driving resistor Rpg2 is connected to the driving power supply terminal V;

[0091] A second switch tube M2, a control end of the second switch tube M2 is connected to the second end of the second driving resistor Rpg2, and is used to be turned on when the power device Q is turned on;

[0092] A fourth diode D4, wherein an anode of the fourth diode D4 is connected to the gate of the power device Q, and a cathode of the fourth diode D4 is connected to the drain of the second switch tube M2;

[0093] a fifth diode Df2, wherein an anode of the fifth diode Df2 is connected to a source of the second switch tube M2;

[0094] The fourth resistor Rf2 has a first end connected to the cathode of the fifth diode Df2, and a second end connected to the second end of the third resistor Rb2.

[0095] The second switch tube M2 is an NMOS tube (N-Metal-Oxide-Semiconductor). When the driving power supply terminal V is a negative voltage, the gate voltage of the second switch tube M2 is lower than the source voltage, and the second switch tube M2 is turned off. When the driving power supply terminal V is a positive voltage, the V of the power device Q is gs1 The power device Q is turned on and the gate voltage of the second switch tube M2 increases rapidly. At this time, the power device QV ds1 When it decreases, the rising rate of the source of the second switch tube M2 is lower than the rising rate of the gate of the second switch tube M2 through the third resistor Rb2 and the second capacitor Cb2, so that the second switch tube M2 is in the on state. At this time, the current of the gate of the power device Q is absorbed by the fourth diode D4, the second switch tube M2, the fifth diode Df2, and the fourth resistor Rf2.

[0096] Optionally, in this embodiment, an anti-reverse circuit is provided, and the anti-reverse circuit may include a diode, and the unidirectional conduction principle of the diode is used to control the flow direction of the absorption current, thereby ensuring the accuracy of the absorption current. For example, Figure 4 The fourth diode D4 in the circuit is an anti-reverse circuit.

[0097] In some optional embodiments, such as Figure 4 As shown, the absorption control module 22 also includes:

[0098] A third capacitor Cs1 , a first end of the third capacitor Cs1 is connected to a first end of a third resistor Rb2 , and a second end of the third capacitor Cs1 is connected to a second end of the third resistor Rb2 .

[0099] Connecting the third capacitor Cs1 in parallel across the third resistor Rb2 can speed up the voltage increase at point a, so that the second switch tube M2 and the fifth diode Df2 are turned on when the power device Q is turned on. gs1 The voltage suddenly drops to a large negative voltage, which may even damage the power device Q.

[0100] In some optional embodiments, such as Figure 5 As shown, in this embodiment, the crosstalk suppression driving circuit further includes:

[0101] A fifth resistor R0, wherein a first end of the fifth resistor RC is connected to a source of the upper bridge arm power device Q1;

[0102] The inductor L0 has a first end connected to the second end of the fifth resistor R0 and a second end of the inductor L0 is grounded.

[0103] The fifth resistor R0 and the inductor L0 are used to verify the influence of one power device Q in the upper and lower bridge arms on the other power device. Specifically, a resistive-inductive load is connected between the middle point of the upper and lower bridge arms and the ground. When the upper bridge arm power device Q1 is turned on, the current flows from the source through the fifth resistor R0 and the inductor L0 to the ground. When the upper bridge arm power device Q1 is turned off, L0 is used to carry out freewheeling through the anti-parallel diode inside the lower bridge arm power device Q2, and the crosstalk influence of the opening and closing of the upper bridge arm power device Q1 on the lower bridge arm power device Q2 is observed and analyzed.

[0104] In view of the situation that the conduction time of the upper arm power device Q1 and the lower arm power device Q2 are complementary, the upper arm power device Q1 and the lower arm power device Q2 interfere with each other. Therefore, crosstalk suppression drive circuits are respectively provided in the upper arm and the lower arm, thereby suppressing the mutual interference between the upper arm power device Q1 and the lower arm power device Q2.

[0105] In this embodiment, the present invention provides a crosstalk suppression driving device, which includes the crosstalk suppression driving circuit and the MOS driving circuit as described above, and specifically may include two crosstalk suppression driving circuits and upper and lower bridge arm MOS driving circuits, and the two crosstalk suppression driving circuits are respectively arranged on the upper bridge MOS driving circuit and the lower bridge MOS driving circuit. The crosstalk suppression driving device effectively reduces the negative voltage pulse brought to the gate voltage of the complementary MOS tube when the MOS tube is turned off, thereby avoiding damage to the complementary MOS tube. At the same time, it effectively reduces the positive voltage pulse brought to the gate voltage of the complementary MOS tube when the MOS tube is turned on, thereby avoiding the complementary MOS tube from being mis-turned on, and suppressing the crosstalk from the source.

[0106] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from these are still within the scope of protection of the invention.

Claims

1. A crosstalk suppression driving circuit, characterized in that: The circuit comprises: A current injection module, the current injection module is connected to the power device and the driving power supply terminal respectively, and is used to inject current into the gate of the power device when it is detected that the power device is turned off, so as to slow down the voltage change rate when the power device is turned off; A current absorption module is connected to the power device and the driving power supply terminal respectively. When it is detected that the power device is turned on, the current absorption module absorbs current from the gate of the power device to slow down the voltage change rate when the power device is turned on.

2. The circuit according to claim 1, characterized in that The current injection module comprises: A charging module, the charging module is connected to the driving power supply terminal and the source of the power device, and is used to inject current into the gate of the power device; An injection control module is connected to the driving power supply terminal, the gate of the power device and the charging module, and is used to control the charging module to inject current into the gate of the power device when it is detected that the power device is turned off.

3. The circuit according to claim 2, characterized in that The charging module comprises: a first diode, wherein an anode of the first diode is connected to the driving power supply terminal, and a cathode of the first diode is connected to the injection control module; a first capacitor, wherein a first end of the first capacitor is connected to a cathode of the first diode, and a second end of the first capacitor is connected to a source of the power device; A first resistor, wherein a first end of the first resistor is connected to the cathode of the first diode, and a second end of the first resistor is connected to the source of the power device.

4. The circuit according to claim 3, characterized in that The injection control module comprises: A first driving resistor, wherein a first end of the first driving resistor is connected to the driving power supply end; A first switch tube, wherein a gate of the first switch tube is connected to a second end of the first driving resistor; a second diode, the anode of the second diode being connected to the cathode of the first diode, and being configured to be turned on when the power device is turned off; a second resistor, wherein a first end of the second resistor is connected to a cathode of the second diode, and a second end of the second resistor is connected to a source of the first switch tube; A third diode, wherein an anode of the third diode is connected to the drain of the first switch tube, and a cathode of the third diode is connected to the gate of the power device.

5. The circuit according to claim 1, characterized in that The current absorption module comprises: A filtering module, the filtering module is connected to the source of the power device, and is used to filter the source of the power device when it is detected that the power device is turned on, so as to output a turn-on signal; An absorption control module is connected to the gate of the power device, the driving power supply terminal and the filtering module respectively, and is used to receive the conduction signal and absorb current from the gate of the power device.

6. The circuit according to claim 5, characterized in that The filtering module comprises: a third resistor, wherein a first end of the third resistor is connected to the source of the power device, and a second end of the third resistor is connected to the absorption control module; A second capacitor, wherein a first end of the second capacitor is connected to a second end of the third resistor, and a second end of the second capacitor is grounded.

7. The circuit according to claim 6, characterized in that The absorption control module comprises: a second driving resistor, wherein a first end of the second driving resistor is connected to the driving power supply end; A second switch tube, the gate of the second switch tube is connected to the second end of the second driving resistor, and is used to be turned on when the power device is turned on; a fourth diode, wherein an anode of the fourth diode is connected to the gate of the power device, and a cathode of the fourth diode is connected to the drain of the second switch tube; a fifth diode, wherein an anode of the fifth diode is connected to a source of the second switch tube; A fourth resistor, wherein a first end of the fourth resistor is connected to the cathode of the fifth diode, and a second end of the fourth resistor is connected to the second end of the third resistor.

8. The circuit according to claim 7, characterized in that The absorption control module also includes: A third capacitor, wherein a first end of the third capacitor is connected to a first end of the third resistor, and a second end of the third capacitor is connected to a second end of the third resistor.

9. The circuit according to claim 1, characterized in that The crosstalk suppression driving circuit further includes: a fifth resistor, wherein a first end of the fifth resistor is connected to a source of the power device in the upper bridge arm; An inductor, a first end of the inductor is connected to the second end of the fifth resistor, and a second end of the inductor is grounded.

10. A crosstalk suppression driving device, characterized in that: The crosstalk suppression driving device comprises the crosstalk suppression driving circuit according to any one of claims 1 to 9.

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