Radio frequency power combiner, radio frequency power supply and electronic equipment

Abstract

The embodiment of the invention discloses a radio frequency power combiner, a radio frequency power supply and electronic equipment. The radio frequency power combiner comprises a plurality of input ports, a plurality of transmission channels, an output port and an isolation circuit. The first ports of the plurality of transmission channels are connected with the plurality of input ports in a one-to-one correspondence manner, the second ports of the plurality of transmission channels are connected with the output port, and the first ports of two adjacent transmission channels in the plurality of transmission channels are connected through at least one isolation circuit. The isolation circuit comprises an isolation resistor, a first capacitor and a second capacitor, the first capacitor is connected in series between the first end of the isolation resistor and the first port of one of the two transmission channels, and the second capacitor is connected in series between the second end of the isolation resistor and the first port of the other of the two transmission channels. The two ends of the isolation resistor are respectively connected with one capacitor in series, so that the total capacitance at the two ends of the isolation resistor can be reduced, and the power loss of the isolation resistor is reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power synthesizer, a radio frequency power supply and an electronic device. Background Art

[0002] RF power supplies usually have an output power of several kilowatts or even tens of thousands of watts, but the power of existing solid-state devices usually cannot reach such a high power. The RF power combiner is a synthesis network that combines several equal or approximately equal power signals into a high-power or relatively high-power output signal. Based on this, an RF power combiner is used at the output end of the RF power supply to perform power synthesis to achieve the required power. However, the RF power combiner usually needs to set a 50-ohm isolation resistor. The isolation resistor itself has parasitic capacitance, and the parasitic capacitance will increase with the increase of rated power and package volume. As a result, in the case of high-power output, there is usually a high power loss on the isolation resistor, affecting the performance of the RF power combiner. Summary of the invention

[0003] Embodiments of the present application provide a radio frequency power combiner, a radio frequency power supply, and an electronic device, which are used to reduce the power loss of an isolation resistor provided in the radio frequency power combiner.

[0004] In the first aspect, an embodiment of the present application provides a radio frequency power synthesizer, which includes: multiple input ports, multiple transmission channels, output ports and isolation circuits. Among them, the first ports of the multiple transmission channels are connected to the multiple input ports in a one-to-one correspondence, the second ports of the multiple transmission channels are connected to the output ports, and the first ports of two adjacent transmission channels in the multiple transmission channels are connected through at least one isolation circuit. In this way, the isolation circuit not only achieves the isolation effect of the first port, but also realizes impedance matching. In addition, the isolation circuit includes: an isolation resistor, a first capacitor and a second capacitor, the first capacitor is connected in series between the first end of the isolation resistor and the first port of one of the two transmission channels, and the second capacitor is connected in series between the second end of the isolation resistor and the first port of the other transmission channel in the two transmission channels. In this way, a capacitor is connected in series at each end of the isolation resistor, which is equivalent to connecting two capacitors in series on the basis of the parasitic capacitance generated by the isolation resistor, which can reduce the total capacitance at both ends of the isolation resistor, thereby reducing the power loss of the isolation resistor, and then reducing the heating of the isolation resistor, improving the efficiency of the radio frequency power supply, especially solving the bottleneck of ultra-high power resistor selection and heat dissipation.

[0005] In addition, in the present application, a capacitor is connected in series at both ends of the isolation resistor, so that the RF power combiner forms a symmetrical structure, thereby enabling the RF power combiner to have a good power combining effect.

[0006] In some possible implementations, the isolation circuit may specifically include: a first capacitor and a second capacitor, and by setting the capacitance values ​​of the first capacitor and the second capacitor in the same isolation circuit to be the same, the symmetry of the RF power combiner is improved, and the RF power combiner can further have a good power combining effect.

[0007] Multiple capacitors may also be set at both ends of the isolation resistor. In some possible implementations, the first capacitor may include multiple first sub-capacitors; the multiple first sub-capacitors are sequentially connected in series between the first end of the isolation resistor and the first port of one of the two transmission channels. Based on this, the total capacitance at both ends of the isolation resistor can be further reduced, and the power loss of the isolation resistor can be further reduced. Exemplarily, the capacitance values ​​of the first sub-capacitors set in the first capacitor may be the same, partially the same, or different, which is not limited here.

[0008] In some possible implementations, the second capacitor may also include a plurality of second sub-capacitors; the plurality of second sub-capacitors are sequentially connected in series between the second end of the isolation resistor and the first port of the other transmission channel of the two transmission channels. Based on this, the total capacitance at both ends of the isolation resistor can be further reduced, and the power loss of the isolation resistor can be further reduced. Exemplarily, the capacitance values ​​of the second sub-capacitors set in the second capacitor can be all the same, partially the same, or all different, which is not limited here.

[0009] In some possible embodiments, the number of multiple first sub-capacitors and the number of multiple second sub-capacitors can be set to be the same, and by making the capacitance values ​​of the first sub-capacitors and the second sub-capacitors symmetrically set relative to the isolation resistor the same, the symmetry of the RF power combiner can be further improved, and the RF power combiner can further have a good power combining effect.

[0010] In some possible implementations, the RF power combiner may specifically include two transmission channels, and the first ports of the two transmission channels may be connected via an isolation circuit. Exemplarily, the specific implementation form of the transmission channel in the RF power combiner may have multiple forms, and the specific implementation form may satisfy that the characteristic impedance of the two transmission channels is Ω and the phase is 90°.

[0011] In some possible implementations, each of the multiple transmission channels may include: a λ / 4 transmission line. Furthermore, when the RF power combiner includes two transmission channels, the characteristic impedance of the λ / 4 transmission lines in the two transmission channels is Ω and the phase is 90°.

[0012] In some possible implementations, the λ / 4 transmission line may include, but is not limited to, a λ / 4 microstrip line or a λ / 4 stripline.

[0013] In some other possible implementations, each of the multiple transmission channels may include: a lumped circuit structure. Moreover, the characteristic impedance of an equivalent circuit of the lumped circuit structure of two transmission channels is Ω, and the phase is 90°.

[0014] In some possible implementations, the lumped circuit structure includes: a third capacitor, an inductor, and a fourth capacitor. The first end of the inductor is connected to the corresponding input port, the second end of the inductor is connected to the output port, the third capacitor is connected between the first end of the inductor and the ground terminal, and the fourth capacitor is connected between the second end of the inductor and the ground terminal. In this way, the capacitor and the inductor can be used to form a lumped circuit structure.

[0015] In a second aspect, an embodiment of the present application further provides a radio frequency power supply, comprising: a plurality of signal sources and at least one radio frequency power synthesizer according to the first aspect; the plurality of signal sources are connected one-to-one with a plurality of input ports of the radio frequency power synthesizer. Since the power loss of the radio frequency power synthesizer is small, the power loss of the radio frequency power supply formed based on the radio frequency power synthesizer is also small and the efficiency is high.

[0016] In a third aspect, an embodiment of the present application further provides an electronic device, comprising: a load and the RF power supply of the second aspect, wherein the output port of the RF power synthesizer in the RF power supply is connected to the load to supply power to the load. Since the power loss of the RF power supply is also small and the efficiency is high, the power loss of the electronic device is also small and the efficiency is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of a radio frequency power synthesizer provided in one embodiment of the present application; Figure 3 A schematic diagram of the structure of a radio frequency power synthesizer provided in yet another embodiment of the present application; Figure 4 A schematic diagram of the structure of a radio frequency power synthesizer provided in yet another embodiment of the present application; Figure 5 A schematic structural diagram of a radio frequency power synthesizer provided in yet another embodiment of the present application.

[0018] Reference numerals: 100-RF power supply; 200-load; 110a / 110b-signal source; 120-RF power synthesizer; Ina / Inb-input port; OUTP-output port; 121a / 121b-transmission channel; 122-isolation circuit; RS-isolation resistor; C1-first capacitor; C2-second capacitor; R0-equivalent resistor; C3-third capacitor; L-inductor; C4-fourth capacitor; C11 / C12-first sub-capacitor; C21 / C22-second sub-capacitor. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings. The specific operating methods in the method embodiments can also be applied to device embodiments or system embodiments. It should be noted that in the description of the present application, "at least one" refers to one or more, wherein multiple refers to two or more. In view of this, "multiple" can also be understood as "at least two" in the embodiments of the present application. In addition, it should be understood that in the description of the present application, words such as "first" and "second" are only used to distinguish the purpose of description, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying order.

[0020] It should be pointed out that in the embodiments of the present application, "connection" may refer to electrical connection, and the connection between two electrical components may be a direct or indirect connection between the two electrical components. For example, the connection between A and B may be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components, such as A and B connection, or A and C direct connection, C and B direct connection, and A and B are connected through C. In the embodiments of the present application, "coupling" may refer to the coupling between two windings through an electromagnetic field, that is, the two windings can transmit electrical energy through an electromagnetic field, which mainly includes the energy conversion process of electrical energy-magnetic field potential energy-electrical energy.

[0021] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present application. In order to facilitate understanding of the RF power synthesizer, RF power supply and electronic equipment provided in the embodiments of the present application, the application scenarios thereof are first introduced below.

[0022] The RF power synthesizer provided in the embodiment of the present application can be applied to a RF power supply. Since the power loss of the RF power synthesizer provided in the embodiment of the present application is reduced, the power loss of the formed RF power supply can be reduced and the efficiency can be improved. In addition, the RF power supply provided in the embodiment of the present application can be widely used in various electronic devices, for example, it can be applied to semiconductor process equipment. Semiconductor process equipment includes but is not limited to plasma equipment. It is understandable that the RF power synthesizer proposed in the embodiment of the present application is intended to include but is not limited to application in these and any other suitable types of electronic devices.

[0023] Reference Figure 1 , Figure 1 A schematic diagram of the structure of an electronic device provided for an embodiment of the present application. The electronic device may include: an RF power supply 100 and a load 200. The RF power supply 100 is a power supply that can generate a fixed frequency sinusoidal voltage, the frequency of which is within the RF range (about 3KHz to 300GHz) and has a certain power. The output end of the RF power supply 100 is connected to the load 200 to supply power to the load 200. The present application does not limit the specific structure and type of the load 200.

[0024] Exemplarily, the RF power supply 100 includes: signal sources 110a, 110b and a RF power synthesizer 120. The RF power synthesizer 120 has input ports Ina, Inb and an output port OUTP. The signal source 110a is connected to the input port Ina, and provides a high-frequency signal of a certain power (such as high power or relatively high power) to the input port Ina. The signal source 110b is connected to the input port Inb, and provides a high-frequency signal of a certain power (such as high power or relatively high power) to the input port Inb. The output port OUTP is connected to the load 200.

[0025] In practical applications, the RF power synthesizer 120 performs power synthesis on the high frequency signals input to the input ports Ina and Inb to achieve the required power, and then provides the synthesized signal to the load 200 through the output port to power the load 200.

[0026] It is understandable that the number of signal sources included in the RF power supply 100 may also be three, four, five or more, which is not limited herein.

[0027] Reference Figure 2 and Figure 3 , Figure 2 and Figure 3Schematic diagrams of the structures of the RF power synthesizers provided in the embodiments of the present application. The RF power synthesizer 120 also includes: transmission channels 121a, 121b and an isolation circuit 122. Among them, the first port of the transmission channel 121a is connected to the input port Ina, the first port of the transmission channel 121b is connected to the input port Inb, and the second ports of the transmission channels 121a and 121b are connected together and connected to the output port OUTP. In addition, the first ports of the transmission channels 121a and 121b are connected through the isolation circuit 122. It can be understood that the isolation circuit 122 not only realizes the isolation effect of the first port, but also realizes impedance matching.

[0028] Continue to refer to Figure 2 and Figure 3 , the isolation circuit 122 includes: an isolation resistor RS, a first capacitor C1 and a second capacitor C2. The first capacitor C1 is connected in series between the first end of the isolation resistor RS and the first port (or input port Ina) of the transmission channel 121a, and the second capacitor C2 is connected in series between the second end of the isolation resistor RS and the first port (or input port Inb) of the transmission channel 121b. In this way, a capacitor is connected in series at each end of the isolation resistor, which is equivalent to connecting two capacitors in series on the basis of the parasitic capacitance generated by the isolation resistor, which can reduce the total capacitance at both ends of the isolation resistor, thereby reducing the power loss of the isolation resistor, and then reducing the heat generation of the isolation resistor, improving the efficiency of the RF power supply, especially solving the bottleneck of ultra-high power resistor selection and heat dissipation.

[0029] In addition, in the present application, a capacitor is connected in series at both ends of the isolation resistor, so that the RF power combiner forms a symmetrical structure, thereby enabling the RF power combiner to have a good power combining effect.

[0030] To further improve the symmetry, refer to Figure 2 and Figure 3 The isolation circuit 122 may specifically include a first capacitor C1 and a second capacitor C2. Furthermore, the capacitance values ​​of the first capacitor C1 and the second capacitor C2 in the same isolation circuit 122 may be the same, thereby improving symmetry and further enabling the RF power synthesizer 120 to have a good power synthesis effect.

[0031] The present application does not limit the specific implementation of the first capacitor C1 and the second capacitor C2, which may be flat plate capacitors or other forms of capacitors.

[0032] The present application does not limit the capacitance values ​​of the first capacitor C1 and the second capacitor C2, and the capacitance values ​​can be selected based on the operating frequency and the requirements of the loss and isolation indicators.

[0033] The present application does not limit the resistance value of the isolation resistor RS, which can be determined according to the need for impedance matching. For example, if the equivalent resistance R0 in the signal sources 110a and 110b is 50Ω, the typical value of the resistance value of the isolation resistor RS can be set to 100Ω.

[0034] The specific implementation form of the transmission channel in the RF power synthesizer 120 can have various forms, and its specific implementation form satisfies the characteristic impedance of the transmission channels 121a and 121b as follows: Ω, the phase can be 90°, which is not limited in the present application. Two embodiments are used as examples for description.

[0035] In some examples, reference Figure 2 , the transmission channels 121a and 121b may respectively include: a λ / 4 transmission line. And the characteristic impedance of the λ / 4 transmission line of the transmission channels 121a and 121b is Ω, and the phase is 90°. Exemplarily, the λ / 4 transmission line includes but is not limited to: a λ / 4 microstrip line or a λ / 4 stripline.

[0036] In some other examples, reference Figure 3 , the transmission channels 121a and 121b may respectively include: a lumped circuit structure. And the characteristic impedance of the equivalent circuit of the lumped circuit structure of the transmission channels 121a and 121b is Ω, the phase is 90°.

[0037] Exemplarily, the lumped circuit structure includes: a third capacitor C3, an inductor L, and a fourth capacitor C4. A first end of the inductor L is connected to the corresponding input port, a second end of the inductor L is connected to the output port, the third capacitor C3 is connected between the first end of the inductor L and the ground, and the fourth capacitor C4 is connected between the second end of the inductor L and the ground.

[0038] The present application does not limit the specific implementation of the third capacitor C3 and the fourth capacitor C4, which can be a flat capacitor or other forms of capacitors. The present application does not limit the capacitance values ​​of the third capacitor C3 and the fourth capacitor C4, which can be the same or different. The present application does not limit the inductance value of the inductor L, which can be determined according to the needs of actual applications.

[0039] In order to achieve a symmetrical structure, the capacitance value of the third capacitor C3 in the transmission channel 121a can be made the same as the capacitance value of the third capacitor C3 in the transmission channel 121b, the capacitance value of the fourth capacitor C4 in the transmission channel 121a can be made the same as the capacitance value of the fourth capacitor C4 in the transmission channel 121b, and the inductance value of the inductor L in the transmission channel 121a can be made the same as the inductance value of the inductor L in the transmission channel 121b.

[0040] It is understandable that the above is only an example to illustrate the specific structure of the lumped circuit structure, and it can also be other structures known to those skilled in the art, which is not limited here.

[0041] Similarly, multiple capacitors can be set at both ends of the isolation resistor RS. Figure 4 and Figure 5 , Figure 4 and Figure 5 1 and 2 are schematic diagrams of the structure of a radio frequency power synthesizer provided in another embodiment of the present application. This embodiment is a modification of the implementation method in the above embodiment. Only the differences between this embodiment and the above embodiment are described below, and the similarities are not repeated here.

[0042] Reference Figure 4 and Figure 5 The first capacitor C1 includes: first sub-capacitors C11 and C12; the first sub-capacitors C11 and C12 are sequentially connected in series between the first end of the isolation resistor RS and the first port (or input port Ina) of the transmission channel 121a. In this way, the total capacitance at both ends of the isolation resistor RS can be further reduced, and the power loss of the isolation resistor RS can be further reduced.

[0043] It is understandable that the number of first sub-capacitors provided in the first capacitor C1 may be three, four or more, which is not limited here. In addition, the capacitance values ​​of the first sub-capacitors provided in the first capacitor C1 may be the same, partially the same, or different, which is not limited here.

[0044] Continue to refer to Figure 4 and Figure 5 The second capacitor C2 includes: second sub-capacitors C21 and C22; the second sub-capacitors C21 and C22 are sequentially connected in series between the second end of the isolation resistor RS and the first port (or input port Inb) of the transmission channel 121b.

[0045] It is understandable that the number of second sub-capacitors provided in the second capacitor C2 may also be three, four or more, which is not limited here. The capacitance values ​​of the second sub-capacitors provided in the second capacitor C2 may be the same, partially the same, or different, which is not limited here.

[0046] In order to improve the symmetry, the number of first sub-capacitors set in the first capacitor C1 and the number of second sub-capacitors set in the second capacitor C2 can be made the same, and the capacitance values ​​of the first sub-capacitors and the second sub-capacitors symmetrically set relative to the isolation resistor RS are the same, thereby further improving the symmetry and further enabling the RF power combiner to have a good power combining effect.

[0047] For example, refer to Figure 4 and Figure 5The first sub-capacitor C11 and the second sub-capacitor C21 are symmetrically arranged relative to the isolation resistor RS, so the capacitance values ​​of the first sub-capacitor C11 and the second sub-capacitor C21 can be the same, and the first sub-capacitor C12 and the second sub-capacitor C22 are symmetrically arranged relative to the isolation resistor RS, so the capacitance values ​​of the first sub-capacitor C12 and the second sub-capacitor C22 can be the same.

[0048] The present application does not limit the capacitance values ​​of the first sub-capacitor and the second sub-capacitor, and the capacitance values ​​can be selected based on the operating frequency and the requirements of the loss and isolation indicators.

[0049] The above contents are only specific implementation methods of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be covered by the protection scope of the present application.

Claims

1. A radio frequency power synthesizer, characterized in that: include: Multiple input ports, multiple transmission channels, output ports, and isolation circuits; The first ports of the plurality of transmission channels are connected to the plurality of input ports in a one-to-one correspondence, the second ports of the plurality of transmission channels are connected to the output port, and the first ports of two adjacent transmission channels in the plurality of transmission channels are connected via at least one of the isolation circuits; The isolation circuit includes: an isolation resistor, a first capacitor and a second capacitor, the first capacitor is connected in series between the first end of the isolation resistor and the first port of one of the two transmission channels, and the second capacitor is connected in series between the second end of the isolation resistor and the first port of the other of the two transmission channels.

2. The radio frequency power synthesizer according to claim 1, characterized in that: The isolation circuit specifically includes a first capacitor and a second capacitor, and the capacitance values ​​of the first capacitor and the second capacitor in the same isolation circuit are the same.

3. The radio frequency power synthesizer according to claim 1, characterized in that: The first capacitor includes a plurality of first sub-capacitors; the plurality of first sub-capacitors are sequentially connected in series between the first end of the isolation resistor and the first port of one of the two transmission channels.

4. The radio frequency power synthesizer according to claim 3, characterized in that: The second capacitor includes a plurality of second sub-capacitors; the plurality of second sub-capacitors are sequentially connected in series between the second end of the isolation resistor and the first port of the other transmission channel of the two transmission channels.

5. The radio frequency power synthesizer according to claim 4, characterized in that: The number of the plurality of first sub-capacitors and the number of the plurality of second sub-capacitors are the same, and the capacitance values ​​of the first sub-capacitors and the second sub-capacitors that are symmetrically arranged relative to the isolation resistor are the same.

6. The radio frequency power synthesizer according to any one of claims 1 to 5, characterized in that: The multiple transmission channels are two transmission channels, and the first ports of the two transmission channels are connected via one of the isolation circuits.

7. The radio frequency power synthesizer according to any one of claims 1 to 5, characterized in that: Each of the plurality of transmission channels comprises: a λ / 4 transmission line.

8. The radio frequency power synthesizer according to claim 7, characterized in that: The λ / 4 transmission line includes: a λ / 4 microstrip line or a λ / 4 stripline.

9. The radio frequency power synthesizer according to any one of claims 1 to 5, characterized in that: Each of the plurality of transmission channels comprises: a lumped circuit structure.

10. The radio frequency power synthesizer according to claim 9, characterized in that: The lumped circuit structure includes: a third capacitor, an inductor and a fourth capacitor; The first end of the inductor is connected to the corresponding input port, the second end of the inductor is connected to the output port, the third capacitor is connected between the first end of the inductor and the ground, and the fourth capacitor is connected between the second end of the inductor and the ground.

11. A radio frequency power supply, characterized in that: include: A plurality of signal sources and at least one radio frequency power synthesizer as claimed in any one of claims 1 to 9; The multiple signal sources are connected to the multiple input ports of the radio frequency power synthesizer in a one-to-one correspondence.

12. An electronic device, characterized in that: include: A load and the RF power supply as claimed in claim 11, wherein the output port of the RF power synthesizer in the RF power supply is connected to the load to supply power to the load.

Images