Pixel sensor circuit

Abstract

The invention provides a pixel sensor circuit. The pixel sensor circuit includes a photodiode element and a transistor element. The photodiode element is used for sensing X-rays to generate a photocurrent signal. The photodiode element has a first end and a second end. A bias voltage is applied to a first end of the photodiode element. The transistor element is coupled to the second end of the photodiode element. The transistor element is used for controlling the light current signal to be read out. The voltage value of the bias voltage is adjusted according to the intensity of the X-ray.

Description

Technical Field

[0001] The present disclosure relates to an electronic circuit, and more particularly to a pixel sensor circuit. Background Art

[0002] During the dynamic imaging process, dynamic X-ray devices based on thin film transistors will encounter image retention problems, resulting in poor image quality. In particular, when the intensity of X-rays increases, the residual charge of the photodiode element is likely to increase. Therefore, if the residual charge of the photodiode element is not cleared in real time, a delay effect will easily occur during the next imaging. Summary of the invention

[0003] The present disclosure provides a pixel sensor circuit, wherein a bias voltage or a reset voltage can be adjusted according to the intensity of X-rays to reduce a delay effect during image acquisition.

[0004] The pixel sensor circuit of the present disclosure includes a photodiode element and a transistor element. The photodiode element is used to sense X-rays and generate a photocurrent signal. The photodiode element has a first end and a second end. A bias voltage is applied to the first end of the photodiode element. The transistor element is coupled to the second end of the photodiode element. The transistor element is used to control the photocurrent signal to be read out. The voltage value of the bias voltage is adjusted according to the intensity of the X-ray.

[0005] The pixel sensor circuit of the present disclosure includes a photodiode element and a first transistor element. The photodiode element is used to sense X-rays and generate a photocurrent signal. The photodiode element has a first end and a second end. The first end of the photodiode element is coupled to a first voltage. The first transistor element has a first end, a second end and a control end. The first end of the first transistor element is coupled to the second end of the photodiode element. A bias voltage is applied to the second end of the first transistor element. The voltage value of the bias voltage is adjusted according to the intensity of the X-ray.

[0006] The pixel sensor circuit disclosed in the present invention includes a photodiode element and a first transistor element. The photodiode element is used to sense X-rays and generate a photocurrent signal. The photodiode element has a first end and a second end. The first end of the photodiode element is coupled to a first voltage. The first transistor element has a first end, a second end and a control end. The first end of the first transistor element is coupled to the second end of the photodiode element. The second end of the first transistor element is coupled to a second voltage. The voltage of the first end of the first transistor element is used as a reset voltage of the photodiode element. The voltage value of the reset voltage is adjusted according to the intensity of the X-ray.

[0007] In order to make the foregoing content more understandable, several embodiments are described in detail below with accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A block diagram of an X-ray device according to an embodiment of the present disclosure is shown;

[0009] Figure 2 Show Figure 1 A schematic diagram of a pixel sensor circuit of an embodiment;

[0010] Figure 3 Show Figure 1 A schematic diagram of waveforms of various signals in an X-ray device of an embodiment;

[0011] Figure 4A and Figure 4B A corresponding relationship diagram of X-ray intensity, image grayscale value and bias voltage according to an embodiment of the present disclosure is shown;

[0012] Figure 5 A block diagram showing an X-ray device according to another embodiment of the present disclosure;

[0013] Figure 6 Show Figure 5 A schematic diagram of a pixel sensor circuit of an embodiment;

[0014] Figure 7 A schematic diagram showing the relationship between the bias voltage and the reset current of an embodiment of the present disclosure;

[0015] Figure 8 Show Figure 5 A schematic diagram of another embodiment of a pixel sensor circuit;

[0016] Fig. 9 Show Figure 8 A schematic diagram of a waveform of a reset voltage of a pixel sensor circuit varying with time;

[0017] Fig.10 Show Figure 8 Schematic diagram of the waveforms of various signals in the pixel sensor circuit. DETAILED DESCRIPTION

[0018] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to indicate the same or similar parts. It should be noted that, in order to facilitate the reader's understanding and the simplicity of the drawings, the various drawings in the present disclosure only depict a portion of an electronic device or display device, and certain elements in the drawings are not shown in actual proportion. In addition, the number and size of each element in the drawings are for illustration only and are not intended to limit the scope of the present disclosure.

[0019] Certain words are used throughout the specification and claims of this disclosure to refer to specific components. It should be understood by those skilled in the art that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, the words "having" and "including" are open-ended words and should be interpreted as "including but not limited to..."

[0020] In some embodiments of the present disclosure, terms such as "connection" and "interconnection" related to bonding and connection, unless otherwise defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, wherein another structure is disposed between the two structures. Terms related to bonding and connection may also include situations where both structures are movable, or where both structures are fixed. In addition, the terms "electrically connected" and "coupled" include any direct and indirect electrical connection means.

[0021] In the following embodiments, the same or similar elements will use the same or similar reference numerals, and their redundant description will be omitted. In addition, the features in different embodiments can be mixed and matched as long as they do not violate the spirit of the disclosure or conflict with each other, and simple equivalent changes and modifications made in accordance with this specification or claims are still within the scope of this disclosure. In addition, the terms "first", "second", etc. mentioned in this specification or claims are only used to name different elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of elements, nor are they used to limit the manufacturing order or setting order of the elements.

[0022] It should be noted that the following embodiments can replace, reorganize, or mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. The features between the embodiments can be mixed and matched as long as they do not violate the spirit of the disclosure or conflict with each other.

[0023] Figure 1 A block diagram of an X-ray device according to an embodiment of the present disclosure is shown. Figure 1 The X-ray device 100 may be an X-ray flat panel detector (FPD). For example, the X-ray device 100 may be a digital X-ray photography (DR) system for off-site backup. The X-ray device 100 may be a mobile image capture device and may be used to obtain a measurement image (e.g., an X-ray image).

[0024] In this embodiment, the X-ray device 100 may first be connected to an electronic device (not shown) for communication, wherein the electronic device may be, for example, a personal computer (PC), a laptop, a tablet, or a smart phone, and may output or automatically output a control signal to the X-ray device 100 according to user control. For example, when a user needs to use the X-ray device 100 to measure and analyze an X-ray image of a lung measurement area, the user may start the X-ray device 100 and connect through the electronic device. The user may operate the electronic device so that the electronic device may output a corresponding control signal to the X-ray device 100 to set the X-ray device 100 to execute a measurement module corresponding to the lung measurement area.

[0025] The X-ray device 100 includes a control circuit 110, a drive circuit 120, a readout circuit 130, and a sensor panel 140. The control circuit 110 is used to control the overall measurement operation of the X-ray device 100. The sensor panel 140 includes a plurality of Figure 2 The pixel sensor circuit 200 is shown. The pixel sensor circuit 200 is arranged in an array on the sensor panel 140. The driving circuit 120 is used to drive the sensor panel 140 to perform a measurement operation, and the reading circuit 130 obtains the measurement result.

[0026] In this embodiment, during the dynamic imaging of the X-ray device 100, the control circuit 110 can obtain the light and dark grayscale values ​​of the first image and automatically feedback control the bias voltage of the photodiode element to effectively neutralize the residual charge, thereby reducing the delay effect of the second image.

[0027] In the present embodiment, the control circuit 110 may be a central processing unit (CPU), and may communicate with other electronic devices or electronic units through a wired or wireless communication module. For example, the control circuit 110 may be connected to other electronic devices or other electronic units through a connecting line, or the control circuit 110 may communicate with other electronic devices or other electronic units through Bluetooth or wifi. Alternatively, the control circuit 110 may be a field programmable gate array (FPGA) or a graphics processing unit (GPU) or other suitable components.

[0028] Figure 2 Show Figure 1 A schematic diagram of a pixel sensor circuit according to an embodiment. Figure 3 Show Figure 1Schematic diagram of waveforms of various signals in the X-ray device of the embodiment. Please refer to Figures 1 to 3 , the pixel sensor circuit 200 includes a photodiode element 210 and a transistor element 220. The photodiode element 210 is used to sense the X-ray 310 and generate a photocurrent signal IPD. The photodiode element 210 senses the X-ray 310 by directly receiving the X-ray 310 and being exposed, thereby generating the photocurrent signal IPD, or the X-ray 310 first passes through a scintillator layer (photoconversion layer) and is converted into a light band that the photodiode element 210 can sense, and at this time, the photodiode element 210 generates a photocurrent signal IPD.

[0029] The transistor device 220 is used to control the photocurrent signal IPD to be read out. For example, the sensing voltage VPD corresponding to the photocurrent signal IPD is read out from the data line 142 and output to the readout circuit 130 . Figure 3 The X-ray waveform 310 shown represents the intensity of the X-ray, which corresponds to the X-ray dose, and its unit can be expressed in micro Gray (uGy). The dotted line of the waveform 310 indicates that the intensity of the X-ray increases, from the intensity Gy1 to the intensity Gy2.

[0030] The photodiode element 210 has a first end and a second end. The bias voltage VB1 is applied to the first end of the photodiode element 210, and the second end of the photodiode element 210 is coupled to the first end of the transistor element 220. The first end of the photodiode element 210 is an anode, and the second end of the photodiode element 210 is a cathode. The transistor element 220 has a first end, a second end, and a control end. The first end of the transistor element 220 is coupled to the second end of the photodiode element 210. The second end of the transistor element 220 is coupled to the data line 142 of the sensor panel 140, and the photocurrent signal IPD is read out from the data line 142. The control end of the transistor element 220 is coupled to the scan line 144 of the sensor panel 140.

[0031] exist Figure 3 In the embodiment, the driving circuit 120 outputs a high-level scanning signal 320 to turn on the transistor element 220, and then the readout circuit 130 reads the photocurrent IPD signal during the readout period (the high-level period of the readout signal 330) and outputs it to the image processor (not shown) after digitization to form an X-ray image. The image processor can be set in the control circuit 110 or other positions of the X-ray device 100.

[0032] A bias voltage VB1 is applied to the first end (anode) of the photodiode element 210. The voltage value of the bias voltage VB1 is adjusted according to the intensity of the X-ray 310. For example, the stronger the intensity of the X-ray 310, the lower the voltage value of the bias voltage VB1. In an embodiment, the voltage value of the bias voltage VB1 can be adjusted between 1 volt and -5 volts according to the intensity of the X-ray 310. This voltage range is not intended to limit the present disclosure.

[0033] Specifically, in the present embodiment, during the dynamic imaging process of the X-ray device 100, the control circuit 110 can obtain the light and dark grayscale values ​​of the first image. The grayscale value of the first image can be used as a reference for sensing the X-ray 310. Then, the control circuit 110 automatically calculates the size of the appropriate bias voltage VB1, such as the voltage value V1 in this example. In addition, the control circuit 110 converts the bias voltage VB1 into an input signal of a programmable power management IC (power management IC, PMIC) so that the programmable power management IC (not shown) can provide a variety of voltage values ​​of the bias voltage VB1. Therefore, the control circuit 110 can use the grayscale value of the first image as a reference for sensing the X-ray 310, and when acquiring the second image, adjust the voltage value of the bias voltage VB1 according to the intensity of the X-ray 310.

[0034] For example, in Figure 3 In the embodiment, if the intensity of the X-ray 310 is not adjusted after the control circuit 110 obtains the first image and still maintains Gy1, the control circuit 110 decides not to adjust the voltage value of the bias voltage VB1 and still maintains V1 according to the intensity of the X-ray 310. On the contrary, if the intensity of the X-ray 310 increases to Gy2 after the control circuit 110 obtains the first image, the control circuit 110 decides to adjust the voltage value of the bias voltage VB1 to V2 according to the intensity of the X-ray 310.

[0035] Therefore, the control circuit 110 can automatically feedback control the bias voltage VB1 of the photodiode element 210 to effectively neutralize the residual charge increased in the photodiode element 210 when the intensity of the X-ray 310 becomes stronger, thereby reducing the delay effect when capturing the second image.

[0036] Figure 4A and Figure 4B The corresponding relationship diagram of the X-ray intensity, image grayscale value and bias voltage of the embodiment of the present disclosure is shown. Please refer to Figure 4A and Figure 4B The grayscale value of the X-ray image is represented by a 16-bit digital signal, for example, wherein the grayscale value 2048 is 2 to the 11th power, and the grayscale value 65536 is 2 to the 16th power. After the first imaging, the control circuit 110 may Figure 4A and Figure 4BThe corresponding relationship between the three parameters of the X-ray intensity, image grayscale value and bias voltage of the first image is obtained and used as a reference. Then, when taking the image for the second time, if the X-ray intensity changes, the control circuit 110 can Figure 4A and Figure 4B The corresponding relationship among the three parameters of the X-ray intensity, the image grayscale value and the bias voltage of the second image is obtained, and the bias voltage VB1 applied to the photodiode element 210 is adjusted accordingly.

[0037] Figure 4A and Figure 4B The corresponding relationship between the three parameters of X-ray intensity, image grayscale value and bias voltage and their respective values ​​are only used for illustration and are not intended to limit the present disclosure.

[0038] Figure 5 A block diagram of an X-ray device according to another embodiment of the present disclosure is shown. Figure 6 Show Figure 5 A schematic diagram of a pixel sensor circuit according to an embodiment of the present invention. Figure 5 and Figure 6 The X-ray device 400 of this embodiment is similar to Figure 1 The X-ray device 100 of the embodiment has a major difference therebetween, for example, in that the X-ray device 400 further includes a reset circuit 150. The reset circuit 150 is used to perform a reset operation on the pixel sensor circuit 600 during a reset period.

[0039] The pixel sensor circuit 600 includes a photodiode element 210, a first transistor element 610 and a second transistor element 620. The photodiode element 210 has a first end and a second end. The first end of the photodiode element 210 is coupled to a first voltage GND, such as a ground voltage. The second end of the photodiode element 210 is coupled to a first end of the first transistor element 610. The first transistor element 610 has a first end, a second end and a control end. The first end of the first transistor element 610 is coupled to the second end of the photodiode element 210, and the second end of the first transistor element 610 is applied with a bias voltage VB2. The control end of the first transistor element 610 is coupled to the reset line 146. The second transistor element 620 has a first end, a second end and a control end. The first end of the second transistor element 620 is coupled to the data line 142, and the second end of the second transistor element 620 is coupled to the scan line 144. The control end of the second transistor element 620 is coupled to the second end of the photodiode element 620.

[0040] In the present embodiment, the voltage value of the bias voltage VB2 is adjusted according to the intensity of the X-rays. For example, the stronger the intensity of the X-rays 310, the lower the voltage value of the bias voltage VB2. The voltage value of the bias voltage VB2 can be adjusted between 1V and -5V according to the intensity of the X-rays 310. Specifically, during the reset period, the second voltage VDD is applied to the second end of the second transistor element 620 through the scan line 144, and the reset control signal Vctrl1 is applied to the control end of the first transistor element 610 through the reset line 146, so that the first transistor element 610 generates a reset current I1 corresponding to the bias voltage VB2. In the present embodiment, the relationship between the bias voltage VB2 and the reset current I1 is as follows: Figure 7 The reset current I1 flows to the photodiode element 210 during the reset period to neutralize the charge remaining in the photodiode element 210 .

[0041] Therefore, the control circuit 110 can use the grayscale value of the first image as a reference for sensing the X-ray 310, and when obtaining the second image, adjust the voltage value of the bias voltage VB2 according to the intensity of the X-ray 310. For example, if the intensity of the X-ray 310 is not adjusted after the control circuit 110 obtains the first image, the control circuit 110 decides not to adjust the voltage value of the bias voltage VB2 according to the intensity of the X-ray 310. Conversely, if the intensity of the X-ray 310 increases after the control circuit 110 obtains the first image, the control circuit 110 can decide to increase the voltage value of the bias voltage VB2 according to the intensity of the X-ray 310 to increase the reset current I1. The corresponding relationship between the three parameters of X-ray intensity, image grayscale value and bias voltage in this embodiment can be shown as follows. Figure 4A and Figure 4B shown.

[0042] Therefore, the control circuit 110 can automatically feedback control the bias voltage VB2 of the first transistor element 610 to effectively neutralize the residual charge increased in the photodiode element 210 when the intensity of the X-ray 310 becomes stronger, thereby reducing the delay effect when capturing the second image.

[0043] Figure 8 Show Figure 5 Schematic diagram of another embodiment of a pixel sensor circuit. Fig. 9 Show Figure 8 Schematic diagram of the waveform of the reset voltage of the pixel sensor circuit changing with time. Fig.10 Show Figure 8 The waveform diagram of each signal in the pixel sensor circuit. Please refer to Figures 8 to 10In this embodiment, the control circuit 110 can adjust the pulse width of the reset control signal Vctrl2 according to the intensity of the X-ray 310 to control the on-time length of the first transistor element 610, thereby determining the voltage value of the reset voltage Vrst. In other words, the voltage value of the reset voltage Vrst is adjusted according to the intensity of the X-ray 310. For example, the stronger the intensity of the X-ray 310, the lower the voltage value of the reset voltage Vrst. The voltage value of the reset voltage Vrst can be adjusted between 1 volt and -5 volts according to the intensity of the X-ray 310.

[0044] Specifically, the first end of the first transistor element 610 is coupled to the second end of the photodiode element 210, and the second end of the first transistor element is coupled to the scan line 144. During the reset period, the second voltage VDD is applied to the second end of the first transistor element 610 through the scan line 144, and the reset control signal Vctrl2 is applied to the control end of the first transistor element 610 through the reset line 146. When the first transistor element 610 is turned on, the charge from the second voltage VDD is accumulated at the first end of the first transistor element 610 to generate the reset voltage Vrst. In this embodiment, the reset voltage Vrst varies with time as shown in FIG. Fig. 9 The reset voltage Vrst is used to neutralize the charge remaining in the photodiode element 210 during the reset period.

[0045] Further, the reset control signal Vctrl2 is applied to the control terminal of the first transistor element 610 through the reset line 146, and the conduction time of the first transistor element 610 can be controlled. When the conduction time length of the first transistor element 610 is T1, the voltage value of the corresponding reset voltage Vrst is, for example, V3. When the conduction time length of the first transistor element 610 is increased to T2, the voltage value of the corresponding reset voltage Vrst is, for example, V4. Therefore, the voltage value of the reset voltage Vrst is determined according to the conduction time of the first transistor element 610, and the conduction time of the first transistor element 610 can be adjusted according to the intensity of the X-ray.

[0046] Therefore, the control circuit 110 can use the grayscale value of the first image as a reference for sensing the X-ray 310, and when obtaining the second image, adjust the pulse width of the reset control signal Vctrl2 according to the intensity of the X-ray 310 to determine the voltage value of the reset voltage Vrst. For example, if the intensity of the X-ray 310 is not adjusted after the control circuit 110 obtains the first image and still maintains Gy1, the control circuit 110 decides not to adjust the pulse width of the reset control signal Vctrl2 according to the intensity of the X-ray 310, so the voltage value of the reset voltage Vrst is also maintained at V3. Conversely, if the intensity of the X-ray 310 is enhanced to Gy2 after the control circuit 110 obtains the first image, the control circuit 110 can decide to increase the pulse width of the reset control signal Vctrl2 according to the intensity of the X-ray 310 to increase the voltage value of the reset voltage Vrst. Therefore, when the intensity of the X-ray is stronger, the conduction time of the first transistor element 610 can be adjusted to be longer to increase the voltage value of the reset voltage Vrst. The corresponding relationship between the three parameters of the X-ray intensity, the image grayscale value and the bias voltage in this embodiment can be as follows: Figure 4A and Figure 4B shown.

[0047] Therefore, the control circuit 110 can automatically feedback control the voltage value of the reset voltage Vrst generated by the first transistor element 610 to effectively neutralize the residual charge increased in the photodiode element 210 when the intensity of the X-ray 310 becomes stronger, thereby reducing the delay effect when capturing the second image.

[0048] In summary, in the embodiment of the present disclosure, during the dynamic imaging process of the X-ray device, the control circuit can obtain the brightness and darkness grayscale values ​​of the first image as the reference for sensing the X-rays, and then automatically calculate the appropriate bias voltage or the pulse width of the reset control signal. Therefore, the control circuit can automatically feedback control the bias voltage or the reset voltage to effectively neutralize the residual charge added in the photodiode element when the intensity of the X-rays becomes stronger, thereby reducing the delay effect when capturing the second image.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A pixel sensor circuit, comprising: A photodiode element, used for sensing X-rays to generate a photocurrent signal, wherein the photodiode element has a first end and a second end, and a bias voltage is applied to the first end of the photodiode element; as well as a transistor element, coupled to the second end of the photodiode element and used to control the photocurrent signal to be read out, The voltage value of the bias voltage is adjusted according to the intensity of the X-ray. 2 . The pixel sensor circuit of claim 1 , wherein the first end of the photodiode element is an anode and the second end of the photodiode element is a cathode.

3. The pixel sensor circuit according to claim 1, wherein the transistor element has a first end, a second end and a control end, the first end of the transistor element is coupled to the second end of the photodiode element, the second end of the transistor element is coupled to a data line, and the control end of the transistor element is coupled to a scan line. 4 . The pixel sensor circuit according to claim 1 , wherein the stronger the intensity of the X-rays, the lower the voltage value of the bias voltage.

5. A pixel sensor circuit, comprising: a photodiode element for sensing X-rays to generate a photocurrent signal, wherein the photodiode element has a first end and a second end, and the first end of the photodiode element is coupled to a first voltage; and a first transistor element having a first terminal, a second terminal and a control terminal, wherein the first terminal of the first transistor element is coupled to the second terminal of the photodiode element, and a bias voltage is applied to the second terminal of the first transistor element, The voltage value of the bias voltage is adjusted according to the intensity of the X-ray. 6 . The pixel sensor circuit of claim 5 , wherein the first end of the photodiode element is an anode and the second end of the photodiode element is a cathode.

7. A pixel sensor circuit according to claim 5, wherein the control terminal of the first transistor element is coupled to a reset line, and a reset control signal is applied to the control terminal of the first transistor element through the reset line so that the first transistor element generates a reset current corresponding to the bias voltage, and the reset current flows to the photodiode element.

8. The pixel sensor circuit according to claim 7 further comprises a second transistor element, wherein the second transistor element has a first end, a second end and a control end, the first end of the second transistor element is coupled to a data line, the second end of the second transistor element is coupled to a scan line, and the control end of the second transistor element is coupled to the second end of the photodiode element. 9 . The pixel sensor circuit according to claim 5 , wherein the stronger the intensity of the X-rays, the lower the voltage value of the bias voltage.

10. A pixel sensor circuit, comprising: a photodiode element for sensing X-rays to generate a photocurrent signal, wherein the photodiode element has a first end and a second end, and the first end of the photodiode element is coupled to a first voltage; and a first transistor element having a first terminal, a second terminal and a control terminal, wherein the first terminal of the first transistor element is coupled to the second terminal of the photodiode element, and the second terminal of the first transistor element is coupled to a second voltage, The voltage at the first end of the first transistor element is used as a reset voltage of the photodiode element, and the voltage value of the reset voltage is adjusted according to the intensity of the X-ray. 11 . The pixel sensor circuit of claim 10 , wherein the first end of the photodiode element is an anode and the second end of the photodiode element is a cathode.

12. The pixel sensor circuit according to claim 10, wherein the control end of the first transistor element is coupled to a reset line, and a reset control signal is applied to the control end of the first transistor element through the reset line to control the on-time of the first transistor element, wherein a voltage value of the reset voltage is determined according to the on-time of the first transistor element, and the on-time of the first transistor element is adjusted according to the intensity of the X-ray. 13 . The pixel sensor circuit according to claim 12 , wherein the on-time of the first transistor element is adjusted to be longer as the intensity of the X-ray is stronger.

14. The pixel sensor circuit according to claim 10 further comprises a second transistor element, wherein the second transistor element has a first end, a second end and a control end, the first end of the second transistor element is coupled to a data line, the second end of the second transistor element is coupled to a scan line, and the control end of the second transistor element is coupled to the second end of the photodiode element. 15 . The pixel sensor circuit according to claim 10 , wherein the stronger the intensity of the X-rays, the lower the voltage value of the reset voltage.

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