Driving substrate and preparation method thereof, and preparation method of display panel

Abstract

The application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. By differentiating the overhanging widths of the isolation structures surrounding different pixel trenches and differentiating the extension widths, the etching of the conductive part in the preparation process of the sub-pixels arranged in the pixel trenches is matched, the width of the etched conductive part is compensated, the overhanging widths of the isolation structures in the final product are ensured to be the same, further, by making the difference between the first overhanging width and the second overhanging width the same as the difference between the first extension width and the second extension width, the difference between the overhanging width and the extension width in a single isolation structure is ensured to be unchanged, thereby the evaporation angle of each sub-pixel can be further ensured to be consistent when the sub-pixels are evaporated subsequently, and then the lap joint effect consistency of the cathodes of each sub-pixel and the conductive part is facilitated to improve the conductive lap joint effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a driving substrate and a preparation method thereof, and a preparation method of a display panel. BACKGROUND

[0002] With the development of display technology, in order to reduce the cost, the OLED (Organic Light-Emitting Diode) display device in the cathode and the light-emitting layer is formed by removing the fine mask plate. The cathode is formed by evaporation. The cathode is overlapped with the isolation structure to realize the electrical connection between the cathodes.

[0003] However, the evaporation method has the risk of poor overlap between the cathode and the isolation structure. SUMMARY

[0004] The technical problem solved by the present application is to provide a driving substrate and a preparation method thereof, and a preparation method of a display panel, to solve the problem of poor overlap between the cathode and the isolation structure in the prior art.

[0005] To solve the above technical problem, the first technical solution provided by the present application is to provide a preparation method of a driving substrate, comprising:

[0006] providing a driving layer, an anode metal layer and a pixel definition layer which are sequentially stacked;

[0007] forming an isolation structure on the side of the pixel definition layer away from the driving layer;

[0008] The isolation structure surrounds the pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel slot; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as the overhang width, and the width of the roof structure beyond the bottom of the conductive part is defined as the extension width; the pixel slot comprises a first pixel slot and a second pixel slot; in the isolation structure surrounding the first pixel slot, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel slot, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value.

[0009] The isolation structure is formed on the side of the pixel definition layer away from the driving layer, comprising:

[0010] forming a conductive layer and a roof layer on the side of the pixel definition layer away from the driving layer.

[0011] etching the eave layer and the conductive layer to form a pixel groove; a sidewall of the pixel groove forms an isolation structure.

[0012] The method further includes:

[0013] defining a first pre-pixel groove as a pre-pixel groove used to form a first pixel groove, and a second pre-pixel groove as a pre-pixel groove used to form a second pixel groove.

[0014] defining a first pre-pixel groove as a pre-pixel groove used to form a first pixel groove, and a second pre-pixel groove as a pre-pixel groove used to form a second pixel groove.

[0015] The first interval is different from the second interval by a first preset fixed value.

[0016] The first interval is different from the second interval by a first preset fixed value.

[0017] The method further includes:

[0018] defining a first pre-pixel groove as a pre-pixel groove used to form a first pixel groove, a second pre-pixel groove as a pre-pixel groove used to form a second pixel groove, and a third pre-pixel groove as a pre-pixel groove used to form a third pixel groove.

[0019] defining a first pre-pixel groove as a pre-pixel groove used to form a first pixel groove, a second pre-pixel groove as a pre-pixel groove used to form a second pixel groove, and a third pre-pixel groove as a pre-pixel groove used to form a third pixel groove.

[0020] The first interval is different from the second interval by a first preset fixed value, and the third interval is different from the second interval by a second preset fixed value.

[0021] The first interval is different from the second interval by a first preset fixed value, and the third interval is different from the second interval by a second preset fixed value.

[0022] To solve the above technical problems, the second technical solution provided by the present application is to provide a driving substrate prepared by the preparation method of the driving substrate described above; wherein, it comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are sequentially stacked; the isolation structure is arranged to form a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel slot; in the wall thickness direction of the isolation structure, the width of the conductive part is equal;

[0023] Wherein, in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as the extension width;

[0024] The pixel slot comprises a first pixel slot and a second pixel slot;

[0025] In the isolation structure surrounding the first pixel slot, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width;

[0026] In the isolation structure surrounding the second pixel slot, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width;

[0027] The difference between the first overhanging width and the second overhanging width is a first preset fixed value, and the first preset fixed value is a positive number;

[0028] The difference between the first extension width and the second extension width is a first preset fixed value.

[0029] Wherein, the pixel slot further comprises a third pixel slot, in the isolation structure surrounding the third pixel slot, the overhanging width is defined as a third overhanging width, and the extension width is defined as a third extension width; the difference between the second overhanging width and the third overhanging width is a second preset fixed value; the difference between the second extension width and the third extension width is a second preset fixed value; the second preset fixed value is a positive number.

[0030] Wherein, the first preset fixed value is equal to the second preset fixed value.

[0031] Wherein, the preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron;

[0032] In the direction perpendicular to the pixel definition layer, the thickness of the roof structure is 0.1 microns to 0.3 microns, and the thickness of the conductive part is 0.6 microns to 1.5 microns; the roof structure has insulation.

[0033] Wherein, the anode metal layer comprises a plurality of anodes arranged at intervals; the pixel slot is arranged corresponding to the anode, and covers the area where the corresponding anode is located.

[0034] In order to solve the above technical problems, the third technical solution provided by the present application is to provide a preparation method of a display panel, comprising:

[0035] providing a driving substrate; the driving substrate is the driving substrate described above;

[0036] forming a sub-pixel in the pixel groove, and making the cathode of the sub-pixel and the conductive part overlap; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0037] The beneficial effects of the present application are as follows: Different from the prior art, the present application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. The preparation method of the driving substrate comprises: providing a driving layer, an anode metal layer, and a pixel definition layer which are sequentially stacked; forming an isolation structure on the side of the pixel definition layer away from the driving layer; wherein the isolation structure is arranged to form a pixel groove; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as a overhanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as an extension width; the pixel groove comprises a first pixel groove and a second pixel groove; in the isolation structure surrounding the first pixel groove, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width; in the isolation structure surrounding the second pixel groove, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width; the difference between the first overhanging width and the second overhanging width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value. By differentiating the overhanging width and the extension width of the isolation structure surrounding different pixel grooves, the corrosion of the conductive part in the preparation process of the sub-pixel arranged in the pixel groove is matched, so as to compensate the width of the corroded conductive part, so as to ensure that the overhanging width of each isolation structure in the final product is the same; further, by making the difference between the first overhanging width and the second overhanging width and the difference between the first extension width and the second extension width the same, the difference between the overhanging width and the extension width in a single isolation structure is ensured to be unchanged, so as to further ensure the consistency of the evaporation angle of each sub-pixel when evaporating the sub-pixel, and thus the consistency of the overlap effect of the cathode and the conductive part of each sub-pixel is beneficial to improving the conductive overlap effect. BRIEF DESCRIPTION OF DRAWINGS

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of an embodiment of the driving substrate provided in this application;

[0040] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at point AA;

[0041] Figure 3 This is a schematic diagram of the structure of the second embodiment of the driving substrate provided in this application;

[0042] Figure 4 This is a schematic diagram of the arrangement structure of an embodiment of the pixel slot and isolation structure provided in this application;

[0043] Figure 5 This is a schematic flowchart of the first embodiment of the method for fabricating the driving substrate provided in this application;

[0044] Figure 6 yes Figure 5 A schematic diagram of the structure corresponding to step S100;

[0045] Figure 7 yes Figure 5 A flowchart illustrating an implementation method for step S200;

[0046] Figure 8 yes Figure 7 A schematic diagram of the structure corresponding to step S10;

[0047] Figure 9 yes Figure 7 A flowchart illustrating an implementation method for step S20;

[0048] Figure 10 yes Figure 9 A flowchart illustrating an implementation method for step S211;

[0049] Figure 11 yes Figure 10 Structural diagrams corresponding to steps S2111 to S2114

[0050] Figure 12 yes Figure 9 A flowchart illustrating an implementation method for step S212;

[0051] Figure 13 yes Figure 12The structure diagram corresponding to step S2121 to S2123 in the middle step;

[0052] Figure 14 is Figure 7 The flow diagram of another embodiment of the middle step S20;

[0053] Figure 15 is Figure 14 The structure diagram corresponding to step S221 in the middle step;

[0054] Figure 16 is Figure 14 The structure diagram corresponding to step S222 in the middle step;

[0055] Figure 17 is Figure 5 The structure diagram corresponding to step 300 in the middle step;

[0056] Figure 18 is the flow diagram of an embodiment of the preparation method of the display panel provided in the present application;

[0057] Figure 19 is Figure 18 The structure diagram corresponding to step S1 in the middle step;

[0058] Figure 20 is Figure 18 The flow diagram of an embodiment of the middle step S2;

[0059] Figure 21 is Figure 20 The flow diagram of an embodiment of the middle step S201;

[0060] Figure 22 is Figure 21 The structure diagram corresponding to step S2011 and S2012 in the middle step;

[0061] Figure 23 is Figure 20 The flow diagram of an embodiment of the middle step S202;

[0062] Figure 24 is Figure 23 The structure diagram corresponding to step S2021 and S2022 in the middle step;

[0063] Figure 25 is Figure 18 The flow diagram of another embodiment of the middle step S2;

[0064] Figure 26 is Figure 25 The structure diagram corresponding to step S201 and S202 in the middle step;

[0065] Figure 27 is Figure 25Fig. 2 is a flowchart of an embodiment of step S203 in Fig. 1;

[0066] Figure 28 is Figure 27 Fig. 3 is a structural diagram corresponding to steps S2031 and S2032 in Fig. 2.

[0067] LIST OF ABBREVIATIONS:

[0068] 100, driving substrate; 10, driving layer; 11, planarization layer; 20, anode metal layer; 21, anode; 30, pixel definition layer; 31, pixel opening; 40, isolation structure; 40A, inner sidewall; 40B, outer sidewall; 41, conductive part; 42, roof structure; 411, first isolation structure; 412, second isolation structure; 413, third isolation structure; 50, pixel slot; 51, first pixel slot; 52, second pixel slot; 53, third pixel slot; 54, prefabricated pixel slot; 541, first prefabricated pixel slot; 542, second prefabricated pixel slot; 543, third prefabricated pixel slot; d1, first overhanging width; d2, second overhanging width; d3, third overhanging width; w1, first extension width; w2, second extension width; w3, third extension width; L1, first pitch; L2, second pitch; L3, third pitch; 410, conductive layer; 420, roof layer; 60, sub-pixel; 61, light-emitting layer; 62, cathode; 60A, first sub-pixel; 60B, second sub-pixel; 60C, third sub-pixel; 610, light-emitting material layer; 620, cathode material layer; 71, to-be-etched region; 72, mask region; 73, first exposed region; 74, second exposed region; 75, third exposed region; 76, fourth exposed region; 81, first photoresist layer; 82, second photoresist layer; 83, third photoresist layer; 84, fourth photoresist layer; 85, fifth photoresist layer; 86, fifth photoresist layer; 90, etching protection layer; 91, first etching protection layer; 92, second etching protection layer; 93, third etching protection layer; 200, display panel. DETAILED DESCRIPTION

[0069] The scheme of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0070] In the following description, specific details are set forth in order to provide a thorough understanding of the present application. However, persons having ordinary skill in the art will appreciate that the present application can be practiced without the specific details.

[0071] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort fall within the scope of the present application.

[0072] The terms “first”, “second”, “third” in the present application are only for descriptive purpose, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with “first”, “second”, “third” can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of “plurality” is at least two, for example, two, three, etc., unless otherwise explicitly and specifically limited. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly. In addition, the terms “include” and “have” and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0073] In this document, reference to “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive or alternative embodiments. It is explicitly contemplated that embodiments described herein can be combined with other embodiments.

[0074] In the prior art, in the process of evaporating sub-pixels by removing a fine mask, an isolation structure is needed to isolate the sub-pixels. The isolation structure includes a conductive part and a roof structure, and the cathodes of the sub-pixels are overlapped with the conductive part to realize the electrical connection between the cathodes. The roof structure is used to adjust the evaporation angle of the evaporation material, so that the cathode can be well overlapped with the conductive part.

[0075] However, due to the difference in the light-emitting layer of the sub-pixels of different colors, the sub-pixels of different colors need to be prepared in sequence. After the light-emitting layer and the cathode of the sub-pixels of one color are evaporated on the whole surface, only the light-emitting layer and the cathode at the position of the sub-pixels of this color are reserved, and the light-emitting layer and the cathode of the sub-pixels of other colors at the position of the sub-pixels of this color need to be removed. Then, the photoresist is exposed and developed, the light-emitting layer and the cathode of the sub-pixels of another color are continuously evaporated on the whole surface, only the light-emitting layer and the cathode at the position of the sub-pixels of this color are reserved, and the light-emitting layer and the cathode of the sub-pixels of other colors at the position of the sub-pixels of this color need to be removed. The above steps are repeated in sequence to evaporate the sub-pixels of other colors. In the process of removing the cathode, an etching liquid is used to react with the cathode to remove the cathode. However, in the process of removing the cathode, the etching liquid also reacts with the conductive part, causing the conductive part to be corroded and the width of the conductive part to be narrowed. In the case where the width of the conductive part is narrowed, it is not conducive to the overlap of the cathode and the conductive part in the subsequent film layer deposition process of the sub-pixels, thereby causing the overlap to be invalid, the electrical signal cannot be connected, and the light-emission of the sub-pixels is affected.

[0076] Please refer to Figure 1 and Figure 2 , Figure 1 is a structure schematic diagram of an embodiment of the driving substrate provided by the present application, Figure 2 is Figure 1 a cross-sectional structure schematic diagram of A-A in

[0077] To solve the above technical problems, the present application provides a driving substrate 100. The driving substrate 100 comprises a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40 which are sequentially stacked. The isolation structure 40 is arranged to form a pixel groove 50. The isolation structure 40 comprises a conductive part 41 and a roof structure 42 which are sequentially stacked. The roof structure 42 extends out of the conductive part 41 in the direction close to the pixel groove 50. In the wall thickness direction of the isolation structure 40, the width of the conductive part 41 is equal. Among them, in the wall thickness direction of the isolation structure 40, the width of the roof structure 42 beyond the top of the conductive part 41 is defined as the overhanging width, and the width of the roof structure 42 beyond the bottom of the conductive part 41 is defined as the extension width. The pixel groove 50 comprises a first pixel groove 51 and a second pixel groove 52. In the isolation structure 40 surrounding the first pixel groove 51, the overhanging width is defined as the first overhanging width d1, and the extension width is defined as the first extension width w1. In the isolation structure 40 surrounding the second pixel groove 52, the overhanging width is defined as the second overhanging width d2, and the extension width is defined as the second extension width w2. The difference between the first overhanging width d1 and the second overhanging width d2 is a first preset fixed value, and the first preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is the first preset fixed value.

[0078] By differentiating the overhanging width of the isolation structure 40 surrounding the different pixel trenches 50, and differentiating the extension width, the etching condition of the conductive part 41 in the manufacturing process of the sub-pixel 60 (see Figure 22 ) arranged in the pixel trench 50 is matched, so as to compensate the width of the etched conductive part 41, to ensure that the overhanging widths of the isolation structures 40 are the same in the final product. Further, by making the difference between the first overhanging width d1 and the second overhanging width d2 the same as the difference between the first extension width w1 and the second extension width w2, the difference between the overhanging width and the extension width in a single isolation structure 40 is kept unchanged, so as to further ensure the consistency of the evaporation angle of each sub-pixel 60 when the sub-pixel 60 is evaporated subsequently, and thus the consistency of the lapping effect of the cathode 62 (see Figure 22 ) of each sub-pixel 60 and the conductive part 41 is improved to improve the conductive lapping effect.

[0079] It should be noted that the driving substrate 100 in the embodiment of the present application is an intermediate product in the process of manufacturing the display panel, and the evaporation of the sub-pixel 60 in the display panel is performed on the driving substrate 100.

[0080] The driving layer 10 is electrically connected with the anode metal layer 20, and is used to drive the sub-pixel 60 in the display panel to emit light. The structure and material of the driving layer 10 are not limited here, and are selected according to actual needs.

[0081] The planar layer 11 is further included between the driving layer 10 and the anode metal layer 20, and the material of the planar layer 11 is not limited here, and is selected according to actual needs.

[0082] The anode metal layer 20 includes a plurality of anodes 21 arranged at intervals. The pixel trench 50 is arranged corresponding to the anode 21, and covers the area where the corresponding anode 21 is located. The anode 21 is an electrode of the sub-pixel 60.

[0083] The pixel trench 50 is arranged corresponding to the anode 21, and covers the area where the corresponding anode 21 is located. It can be understood that one pixel trench 50 corresponds to at least one anode 21, and the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel trench 50 corresponds to one anode 21, the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel trench 50 corresponds to a plurality of anodes 21, the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding plurality of anodes 21 on the driving layer 10.

[0084] In the embodiment, one pixel trench 50 corresponding to one anode 21 is mainly taken as an example for description.

[0085] The pixel definition layer 30 can be an inorganic material, such as a silicon oxide compound, a silicon nitride compound, or a silicon oxynitride compound. The thickness of the pixel definition layer 30 is 0.2-1 microns, and in one embodiment, the thickness of the pixel definition layer 30 is 0.4-0.6 microns.

[0086] In other embodiments, the pixel definition layer 30 can be other materials, and / or the thickness of the pixel definition layer 30 can be other values.

[0087] The isolation structure 40 surrounds to form the pixel groove 50, and it can be understood that the sidewall of the pixel groove 50 is the isolation structure 40. The isolation structure 40 is a ring structure.

[0088] In the outer sidewall 40B of the isolation structure 40 in the embodiment, the outer wall surface of the eave structure 42 and the outer wall surface of the conductive part 41 are arranged in alignment in a direction perpendicular to the pixel definition layer 30.

[0089] In the wall thickness direction of the isolation structure 40, the width of the conductive part 41 is equal, that is, in the embodiment, the width of each conductive part 41 is unchanged, and the width of the eave structure 42 is adjusted to make the overhanging width and the extension width of the isolation structure 40 surrounding different pixel grooves 50 different, so as to compensate for the width of the conductive part 41 corroded to ensure that the overhanging width of each isolation structure 40 in the final product is the same.

[0090] The eave structure 42 extends the conductive part 41 in the direction close to the pixel groove 50, so that the evaporation angle can be adjusted by the inner side edge of the eave structure 42 when the sub-pixel 60 is subsequently evaporated in the pixel groove 50. It should be understood that in the wall thickness direction of the isolation structure 40, the greater the width of the conductive part 41 extended by the eave structure 42 in the direction close to the pixel groove 50, the less likely the cathode 62 of the evaporated sub-pixel 60 is to be overlapped with the conductive part 41.

[0091] In the wall thickness direction of the isolation structure 40, the width of the eave structure 42 beyond the top of the conductive part 41 is the overhanging width, and the width of the eave structure 42 beyond the bottom of the conductive part 41 is the extension width. That is, in the wall thickness direction of the isolation structure 40, the spacing between the inner side edge of the lower surface of the eave structure 42 and the inner side edge of the upper surface of the conductive part 41 is the overhanging width, and the spacing between the inner side edge of the lower surface of the eave structure 42 and the inner side edge of the lower surface of the conductive part 41 is the extension width.

[0092] It should be noted that the inner side and the outer side in the embodiment refer to the relative two sides in the wall thickness direction of the isolation structure 40.

[0093] The pixel groove 50 includes a first pixel groove 51 and a second pixel groove 52. It should be noted that the first pixel groove 51 and the second pixel groove 52 in the embodiment of the present application are respectively used for accommodating sub-pixels 60 of different colors.

[0094] The pixel groove 50 includes at least two kinds of pixel grooves 50, and here only two kinds of pixel grooves 50 are taken as an example for description.

[0095] The shape and size of the first pixel groove 51 and the second pixel groove 52 are not limited here, and can be selected according to actual needs.

[0096] In the isolation structure 40 surrounding the first pixel groove 51, the overhanging width is defined as a first overhanging width d1, and the extension width is defined as a first extension width w1, that is, the overhanging width of the isolation structure 40 surrounding the first pixel groove 51 is the first overhanging width d1, and the extension width of the isolation structure 40 surrounding the first pixel groove 51 is the first extension width w1.

[0097] The first overhanging width d1 is greater than or equal to 0.4 microns and less than or equal to 1 micron, so as to better make the cathode 62 in the sub-pixel 60 overlap with the conductive part 41, and separate the light-emitting layer 61 (see Figure 22 ) in the sub-pixels 60 of different colors.

[0098] In the isolation structure 40 surrounding the second pixel groove 52, the overhanging width is defined as a second overhanging width d2, and the extension width is defined as a second extension width w2, that is, the overhanging width of the isolation structure 40 surrounding the second pixel groove 52 is the second overhanging width d2, and the extension width of the isolation structure 40 surrounding the second pixel groove 52 is the second extension width w2.

[0099] The overhanging width of the isolation structure 40 surrounding the first pixel groove 51 is the first overhanging width d1, and the extension width of the isolation structure 40 surrounding the first pixel groove 51 is the second extension width w2.

[0100] The difference between the first overhanging width d1 and the second overhanging width d2 is a first preset fixed value, and the first preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is the first preset fixed value. It can be understood that the difference between the first overhanging width d1 and the second overhanging width d2 is a first overhanging difference, and the difference between the first extension width w1 and the second extension width w2 is a first extension difference. The first overhanging difference is equal to the first extension difference.

[0101] The preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron, so as to control the etching amount of the conductive part 41 in the subsequent process of evaporating the sub-pixel 60. It can be understood that the etching amount of the conductive part 41 is not infinite in the subsequent process of evaporating the sub-pixel 60, and selecting the preset fixed value in this range is helpful to compensate the conductive part 41 of different isolation structures 40.

[0102] Specifically, the first preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron,

[0103] In the direction perpendicular to the pixel definition layer 30, the thickness of the eave structure 42 is 0.1 microns to 0.3 microns, and the thickness of the conductive part 41 is 0.6 microns to 1.5 microns. The eave structure 42 has insulation.

[0104] The eave structure 42 has insulation, and the eave structure 42 can be an inorganic film layer, for example, silicon oxide compound, silicon nitride compound, or silicon oxynitride compound. The eave structure 42 can also be an organic compound film layer, for example, a material such as soluble polytetrafluoroethylene (PFA), PI (Polyimide), etc.

[0105] The isolation structure 40 defining the first pixel groove 51 is defined as a first isolation structure 411, and the isolation structure 40 defining the second pixel groove 52 is defined as a second isolation structure 412. In the adjacent first pixel groove 51 and the second pixel groove 52, the outer side wall 40B of the first isolation structure 411 is in contact with the outer side wall 40B of the second isolation structure 412, and is flush in the direction parallel to the pixel definition layer 30.

[0106] It should be noted that in the subsequent process of evaporating the sub-pixel 60 on the driving substrate 100, the sub-pixel 60 is sequentially evaporated in the first pixel groove 51 and the second pixel groove 52, and the colors of the sub-pixels 60 evaporated in the first pixel groove 51 and the second pixel groove 52 are different.

[0107] It can be understood that in the subsequent process of evaporating the sub-pixel 60, the evaporation sequence of the sub-pixel 60 of different colors has a corresponding relationship with the size sequence of the overhanging width in the different isolation structures 40, that is, the sub-pixel 60 evaporated first is arranged in the pixel groove 50 (i.e., the first pixel groove 51) surrounded by the isolation structure 40 with the largest overhanging width, and the sub-pixel 60 evaporated later is arranged in the pixel groove 50 surrounded by the isolation structure 40 with the smallest overhanging width, so as to match the etching condition of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50, so as to compensate the width of the etched conductive part 41, so as to ensure that the overhanging widths of the isolation structures 40 are the same in the final product, and to improve the lap joint effect of the cathode 62 and the conductive part 41 of each sub-pixel 60.

[0108] In the embodiment, the pixel definition layer 30 is etched to expose the anode 21, so that the pixel definition layer 30 does not need to be etched again in the subsequent process of evaporating the sub-pixel 60, and the steps can be simplified. Specifically, the pixel definition layer 30 has a plurality of pixel openings 31 arranged at intervals. The pixel openings 31 are arranged one by one with the anodes 21. The pixel openings 31 at least partially expose the corresponding anodes 21. That is, the anodes 21 are exposed to the pixel definition layer 30 through the pixel openings 31.

[0109] In other embodiments, the pixel definition layer 30 can not be etched, and the pixel openings 31 can be etched before the sub-pixel 60 is evaporated.

[0110] The driving substrate 100 can further include a protective film (not shown in the figure) arranged on the side of the isolation structure 40 away from the driving layer 10. The protective film is used to protect the conductive part 41 from corrosion by the external environment during storage and transportation of the driving substrate 100. It should be understood that the protective film needs to be removed when the sub-pixel 60 is evaporated on the driving substrate 100.

[0111] Please refer to Figures 1 to 4 , Figure 3 is a structural schematic diagram of a second embodiment of the driving substrate provided by the present application, Figure 4 is a schematic diagram of the arrangement structure of an embodiment of the pixel groove and the isolation structure provided by the present application.

[0112] The second embodiment of the driving substrate 100 provided by the present application is basically similar in structure to the first embodiment of the driving substrate 100 provided by the present application, and the difference lies in that the pixel groove 50 further includes a third pixel groove 53.

[0113] In the embodiment, the pixel groove 50 further includes a third pixel groove 53, and the overhanging width in the isolation structure 40 surrounding the third pixel groove 53 is defined as a third overhanging width d3, and the extension width in the isolation structure 40 surrounding the third pixel groove 53 is defined as a third extension width w3. That is, the overhanging width in the isolation structure 40 surrounding the third pixel groove 53 is the third overhanging width d3, and the extension width in the isolation structure 40 surrounding the third pixel groove 53 is the third extension width w3.

[0114] The difference between the second overhanging width d2 and the third overhanging width d3 is a second preset fixed value. The difference between the second extension width w2 and the third extension width w3 is a second preset fixed value. That is, the difference between the second overhanging width d2 and the third overhanging width d3 is a second overhanging difference value, and the difference between the second extension width w2 and the third extension width w3 is a second extension difference value. The second overhanging difference value is equal to the second extension difference value.

[0115] The second preset fixed value may be equal to or unequal to the first preset fixed value, depending on the concentration of the etching solution of the cathode 62 of the sub-pixel 60 selected in the subsequent process of evaporating sub-pixels 60 of different colors and / or the etching reaction time.

[0116] In other words, when the etching solution selected for the cathode 62 of the sub-pixels 60 of different colors is the same, and the etching concentration and etching reaction time are the same, the second preset fixed value is equal to the first preset fixed value.

[0117] When the same etching solution is selected for the cathode 62 of the sub-pixels 60 of different colors, but the concentration of the etching solution is different and / or the etching reaction time is different, the second preset fixed value is not equal to the first preset fixed value. The second preset fixed value can be greater than the first preset fixed value, or the second preset fixed value can be less than the first preset fixed value.

[0118] Specifically, the second preset fixed value is less than or equal to 3 micrometers and greater than or equal to 1 micrometer.

[0119] In this embodiment, the second preset fixed value is equal to the first preset fixed value, which can reduce the difficulty of the subsequent fabrication process of the vapor-deposited sub-pixel 60.

[0120] This embodiment can also achieve the same effect of improving the overlap between the cathode 62 and the conductive part 41 of the sub-pixel 60. Compared with the first embodiment of the driving substrate 100 provided in this application, the driving substrate 100 of this embodiment can vapor-deposit a wider variety of colors for the sub-pixel 60 during the subsequent vapor deposition process.

[0121] The arrangement of pixel slots 50 is not restricted here; it can be selected according to actual needs. For example, as... Figure 4 As shown, the first pixel slot 51 and the second pixel slot 52 are located on the same side of the third pixel slot 53. The first pixel slot 51, the second pixel slot 52, and the third pixel slot 53, together with the isolation structure 40 surrounding the pixel slot 50, form a minimum repeating unit. This repeating unit is rectangular.

[0122] Please see Figure 2 , Figure 5 and Figure 6 , Figure 5 This is a schematic flowchart of the first embodiment of the method for fabricating the driving substrate provided in this application. Figure 6 yes Figure 5 A schematic diagram of the structure corresponding to step S100.

[0123] This application provides a method for fabricating a driving substrate. This method is used to fabricate the driving substrate 100 described above.

[0124] In an embodiment, the preparation method of the driving substrate comprises:

[0125] S100: providing a driving layer, an anode metal layer, and a pixel definition layer which are sequentially stacked.

[0126] Specifically, a driving layer 10, an anode metal layer 20, and a pixel definition layer 30 which are sequentially stacked are provided.

[0127] The driving substrate 100 further comprises a planar layer 11 which is located between the driving layer 10 and the anode metal layer 20.

[0128] S200: forming an isolation structure on the side of the pixel definition layer away from the driving layer; wherein the isolation structure surrounds to form a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel slot; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as the extension width; the pixel slot comprises a first pixel slot and a second pixel slot; in the isolation structure surrounding the first pixel slot, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width; in the isolation structure surrounding the second pixel slot, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width; the difference between the first overhanging width and the second overhanging width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value.

[0129] Here, the isolation structure 40 and the pixel slot 50 are not described in detail, and reference is made to the above description.

[0130] Please refer to Figure 2 , Figure 7 and Figure 8 , Figure 7 are Figure 5 the flowchart of an embodiment of step S200 in Figure 8 is Figure 7 the structural schematic diagram corresponding to step S10 in

[0131] In an embodiment, the step of forming an isolation structure on the side of the pixel definition layer away from the driving layer in step S200 comprises:

[0132] S10: sequentially forming a conductive layer and a roof layer on the side of the pixel definition layer away from the driving layer.

[0133] Specifically, a conductive layer 410 and a roof layer 420 are sequentially formed on the side of the pixel definition layer 30 away from the driving layer 10.

[0134] S20: etching the eave layer and the conductive layer to form a pixel groove; a sidewall of the pixel groove forms the isolation structure.

[0135] Specifically, the eave layer 420 and the conductive layer 410 are etched to form a pixel groove 50. A sidewall of the pixel groove 50 forms the isolation structure 40. Etching the conductive layer 410 obtains a conductive part 41, and etching the eave layer 420 obtains an eave structure 42.

[0136] Please refer to Figure 2 and Figure 9 , Figure 9 is Figure 7 a flowchart of an embodiment of step S20 in

[0137] In an embodiment, step S20: etching the eave layer and the conductive layer to form a pixel groove, comprises:

[0138] S211: determining an etching area on the eave layer, etching the eave layer and the conductive layer at the etching area to form a pre-pixel groove; defining the pre-pixel groove for forming a first pixel groove as a first pre-pixel groove, and defining the pre-pixel groove for forming a second pixel groove as a second pre-pixel groove.

[0139] Specifically, a plurality of etching areas 71 are determined on the eave layer 420 by exposure and development, and the eave layer 420 and the conductive layer 410 at the etching areas 71 are etched to form pre-pixel grooves 54. The pre-pixel grooves 54 are defined as a first pre-pixel groove 541 and a second pre-pixel groove 542, respectively.

[0140] It should be noted that the widths of the conductive layers 410 surrounding the pre-pixel grooves 54 are the same, and the widths of the eave layers 420 surrounding the pre-pixel grooves 54 are the same.

[0141] Please refer to Figure 2 , Figure 10 and Figure 11 , Figure 10 is Figure 9 a flowchart of an embodiment of step S211 in Figure 11 is Figure 10 corresponding structure diagrams of steps S2111 to S2114 in

[0142] In an embodiment, S211 specifically comprises:

[0143] S2111: disposing a first photoresist layer on a side of the eave layer away from the conductive layer.

[0144] S2112: exposing and developing the first photoresist layer to determine an etching area on the eave layer and remove the first photoresist layer at the etching area.

[0145] S2113: etching to remove the eave layer at the region to be etched.

[0146] Specifically, the dry etching method is adopted to remove the eave layer 420 at the region 71 to be etched.

[0147] In other embodiments, other methods can also be adopted to remove the eave layer 420 at the region 71 to be etched.

[0148] S2114: etching to remove the conductive layer at the region to be etched, to obtain a pre-pixel slot.

[0149] Specifically, the wet etching method is adopted to remove the conductive layer 410 at the region 71 to be etched, to obtain a pre-pixel slot 54.

[0150] S212: determining a mask region on the unetched eave layer, removing the eave layer outside the mask region, so that the pre-pixel slot forms a pixel slot; wherein in the thickness direction of the conductive layer, the distance between the inner side edge of the eave layer surrounding the first pre-pixel slot and the side edge of the adjacent mask region approaching each other is a first distance, the distance between the inner side edge of the eave layer surrounding the second pre-pixel slot and the side edge of the adjacent mask region approaching each other is a second distance, and the difference between the second distance and the first distance is a first preset fixed value.

[0151] Specifically, the mask region 72 is determined on the unetched eave layer 420 by exposure and development, and the eave layer 420 outside the mask region 72 is removed to retain the eave layer 420 at the mask region 72, so that the pre-pixel slot 54 forms a pixel slot 50.

[0152] It should be noted that in the process of forming different pixel slots 50 in the embodiments of the present application, the conductive layer 410 is etched only once. It can be understood that in the process of adjusting the width of the eave structure 42 to form pixel slots 50 with different overhang widths while ensuring the width of the conductive part 41 remains unchanged, the conductive layer 410 does not need to be etched multiple times, which can reduce the number of wet etching, thereby saving the process flow and production time, and increasing the production capacity without the need for more equipment.

[0153] It should be understood that compared with wet etching, dry etching has more precise control over precision. That is, compared with adjusting the width of the conductive part 41 to form pixel slots 50 with different overhang widths while ensuring the width of the eave structure 42 remains unchanged, in the embodiments of the present application, the width of the conductive part 41 remains unchanged, and the width of the eave structure 42 is adjusted, which can reduce the steps of wet etching and have more precise control over the width, making the size adjustment of the overhang width more precise.

[0154] Please refer to Figure 2 , Figure 12and Figure 13 , Figure 12 is Figure 9 a flowchart of an embodiment of step S212 in Figure 13 is Figure 12 a structural diagram corresponding to steps S2121 to S2123 in

[0155] In a specific embodiment, in step S212, the mask region is determined on the unetched eave layer, and the eave layer outside the mask region is removed, so that the step of forming the pixel groove by the prefabricated pixel groove comprises:

[0156] S2121: removing the first photoresist layer, and disposing a second photoresist layer on the side of the eave layer away from the conductive layer.

[0157] S2122: exposing and developing the second photoresist layer, determining the mask region on the eave layer and removing the second photoresist layer outside the mask region.

[0158] S2123: etching to remove the eave layer outside the mask region.

[0159] Specifically, the dry etching method is used to remove the eave layer 420 outside the mask region 72.

[0160] In other embodiments, other methods can also be used to remove the eave layer 420 outside the mask region 72.

[0161] Please refer to Figure 3 , Figures 14 to 16 , Figure 14 is Figure 7 a flowchart of another embodiment of step S20 in Figure 15 is Figure 14 a structural diagram corresponding to step S221 in Figure 16 is Figure 14 a structural diagram corresponding to step S222 in

[0162] In another specific embodiment, step S20: etching the eave layer and the conductive layer to form the pixel groove, comprises:

[0163] S221: determining the to-be-etched region on the eave layer, etching the eave layer and the conductive layer at the to-be-etched region to form the prefabricated pixel groove; defining the prefabricated pixel groove used to form the first pixel groove as the first prefabricated pixel groove, the prefabricated pixel groove used to form the second pixel groove as the second prefabricated pixel groove, and the prefabricated pixel groove used to form the third pixel groove as the third prefabricated pixel groove.

[0164] For specific steps, please refer to step S211, which will not be described here.

[0165] S222: Determine a mask area on the un-etched eave layer, remove the eave layer outside the mask area, so that the pre-pixel groove forms a pixel groove; wherein, in the wall thickness direction of the conductive layer, the distance between the inner side edge of the eave layer surrounding the first pre-pixel groove and the side edge of the adjacent mask area close to each other is the first distance, the distance between the inner side edge of the eave layer surrounding the second pre-pixel groove and the side edge of the adjacent mask area close to each other is the second distance, and the distance between the inner side edge of the eave layer surrounding the third pre-pixel groove and the side edge of the adjacent mask area close to each other is the third distance; the difference between the second distance and the first distance is a first preset fixed value, and the difference between the third distance and the second distance is a second preset fixed value.

[0166] In the embodiment, the first preset fixed value is equal to the second preset fixed value. In other embodiments, the first preset fixed value and the second preset fixed value can not be equal, which is not described in detail here, and reference is made to the above description.

[0167] Step S222 is similar to step S212, and specific steps are described with reference to step S212, which is not described here.

[0168] Please refer to Figure 3 and Figure 17 , Figure 17 is Figure 5 the structural schematic diagram corresponding to step 300 in

[0169] After step S200, it further includes:

[0170] Step S300: Forming a pixel opening on the pixel definition layer, the pixel groove is arranged corresponding to the pixel opening, and covers the corresponding pixel opening.

[0171] Specifically, the photoresist layer on the eave layer 420 is removed, and a third photoresist layer 83 is arranged on the side of the eave layer 420 away from the pixel definition layer 30. The third photoresist layer 83 is exposed and developed to determine a first exposed area 73 on the pixel definition layer 30. The pixel definition layer 30 at the first exposed area 73 is removed to form a pixel opening 31.

[0172] The first exposed area 73 is arranged corresponding to the pixel groove 50, and is located in the pixel groove 50.

[0173] The structure of the pixel opening 31 is not described in detail here, and reference is made to the above description.

[0174] It should be understood that in other embodiments, step S300 can not be included.

[0175] Please refer to Figure 2 , Figure 18 and Figure 19 , Figure 18is a flowchart of an embodiment of the method for manufacturing a display panel provided in the present application, Figure 19 is Figure 18 is a structural diagram corresponding to step S1 in

[0176] The present application provides a method for manufacturing a display panel. The display panel 200 comprises a sub-pixel 60 and an etching protection layer 90 arranged on one side of the sub-pixel 60, and further comprises a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40. The sub-pixel 60 comprises an anode 21, a light-emitting layer 61 and a cathode 62 arranged in sequence.

[0177] The method for manufacturing a display panel comprises:

[0178] S1: providing a driving substrate.

[0179] Specifically, a driving substrate 100 is provided. The driving substrate 100 is the driving substrate 100 described above, and the structure of the driving substrate 100 is not described here, and reference is made to the description above.

[0180] S2: forming a sub-pixel in the pixel groove by evaporation, and making the cathode of the sub-pixel and the conductive part overlap; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in a first pixel groove, and the second sub-pixel is formed in a second pixel groove.

[0181] Please refer to Figure 2 , Figures 20 to 22 , Figure 20 is Figure 18 is a flowchart of an embodiment of step S2 in Figure 21 is Figure 20 is a flowchart of an embodiment of step S201 in Figure 22 is Figure 21 is a structural diagram corresponding to steps S2011 and S2012 in

[0182] In a specific embodiment, the step of forming a sub-pixel in the pixel groove by evaporation and making the cathode of the sub-pixel and the conductive part overlap in step S2 comprises:

[0183] S201: evaporating a first sub-pixel in a first pixel groove.

[0184] Specifically, the light-emitting layer 61 and the cathode 62 of the first sub-pixel 60A are formed in the first pixel groove 51 by evaporation.

[0185] In an embodiment, step S201 specifically comprises:

[0186] S2011: forming a light-emitting material layer and a cathode material layer of the first sub-pixel and a first etching protection layer on the driving substrate in sequence.

[0187] Specifically, the light-emitting material layer 610 and the cathode material layer 620 of the first sub-pixel 60A, and the first etching protection layer 91 are sequentially formed on the driving substrate 100. The first etching protection layer 91 is used to protect the first sub-pixel 60A from etching when the remaining color sub-pixels 60 are evaporated.

[0188] S2012: A fourth photoresist layer is arranged on the side of the cathode material layer away from the driving substrate, and a second exposure area is determined; the fourth photoresist layer, the first etching protection layer, the light-emitting material layer and the cathode material layer at the second exposure area are sequentially etched to form the first sub-pixel in the area outside the second exposure area.

[0189] Specifically, the fourth photoresist layer 84, the first etching protection layer 91, the light-emitting material layer 610 and the cathode material layer 620 at the second exposure area 74 are sequentially etched to form the first sub-pixel 60A in the area outside the second exposure area 74.

[0190] It should be noted that the cathode material layer 620 is etched by using a wet etching method. The first etching protection layer 91 located outside the second exposure area 74 is not removed, that is, the first etching protection layer 91 is also arranged on the side of the first sub-pixel 60A away from the driving substrate 100. The first etching protection layer 91 covers the first sub-pixel 60A and the inner wall surface of the isolation structure 40 surrounding the first pixel groove 51, so that the cathode 62 of the first sub-pixel 60A and the conductive part 41 in the isolation structure 40 will not be etched again in the subsequent evaporation process of the remaining color sub-pixels 60.

[0191] The first sub-pixel 60A is located in the first pixel groove 51.

[0192] It should be understood that when the cathode material layer 620 at the second exposure area 74 is etched, the etching liquid for etching the cathode material layer 620 will corrode the side wall of the second pixel groove 52, so that the width of the conductive part 41 in the isolation structure 40 surrounding the second pixel groove 52 is narrowed, so that the overhanging width of the second isolation structure 412 is equal to the overhanging width of the first isolation structure 411, and the extension width of the second isolation structure 412 is equal to the extension width of the first isolation structure 411, thereby improving the consistency of the lap joint of the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0193] The first preset fixed value is the etching width of the conductive part 41 by the etching liquid for etching the cathode material layer 620 when the cathode material layer 620 at the second exposure area 74 is etched.

[0194] S202: Evaporating a second sub-pixel in the second pixel groove.

[0195] Specifically, the light emitting layer 61 and the cathode 62 of the second sub-pixel 60B are formed in the second pixel groove 52 by evaporation.

[0196] Please refer to Figure 2 , Figure 23 and 24 , Figure 23 is Figure 20 a flowchart of an embodiment of step S202 in Figure 24 is Figure 23 a structural diagram corresponding to steps S2021 and S2022 in

[0197] In an embodiment, step S202 specifically comprises:

[0198] S2021: removing the fourth photoresist layer, and forming the light emitting material layer and the cathode material layer of the second sub-pixel, and the second etching protection layer on the driving substrate in sequence.

[0199] S2022: disposing the fifth photoresist layer on the side of the cathode material layer of the second sub-pixel away from the driving substrate, and determining the third exposure area; etching the fifth photoresist layer, the second etching protection layer, the light emitting material layer and the cathode material layer of the second sub-pixel in sequence at the third exposure area, so as to form the second sub-pixel in the area outside the third exposure area.

[0200] Steps S2021 to S2022 are similar to steps S2011 to S2012, and refer to the above description, which will not be described here.

[0201] It should be noted that the second etching protection layer 92 outside the third exposure area 75 is not removed, that is, the second etching protection layer 92 is also disposed on the side of the second sub-pixel 60B away from the driving substrate 100.

[0202] The second sub-pixel 60B is located in the second pixel groove 52.

[0203] It should be understood that, since the first etching protection layer 91 is disposed on the side of the first sub-pixel 60A away from the driving substrate 100, when etching the cathode material layer 620 at the third exposure area 75, the etching liquid for etching the cathode material layer 620 will not corrode the sidewall of the first pixel groove 51 and the cathode 62 of the first sub-pixel 60A.

[0204] Please refer to Figure 3 , Figure 25 and Figure 26 , Figure 25 is Figure 18 a flowchart of another embodiment of step S2 in Figure 26 is Figure 25 a structural diagram corresponding to steps S201 and S202 in

[0205] In another specific embodiment, the step of evaporating the sub-pixel in the pixel slot in step S2, and the step of making the cathode of the sub-pixel overlap with the conductive part, include:

[0206] S201: evaporating a first sub-pixel in a first pixel slot.

[0207] The specific steps are described above and will not be repeated here.

[0208] It should be understood that when etching the cathode material layer 620 at the second exposed area 74, the etching liquid for etching the cathode material layer 620 will corrode the sidewall of the second pixel slot 52 and the sidewall of the third pixel slot 53, so as to narrow the width of the conductive part 41 in the isolation structure 40 surrounding the second pixel slot 52 by a first preset fixed value, and narrow the width of the conductive part 41 in the isolation structure 40 surrounding the third pixel slot 53 by a preset fixed value, so as to equalize the overhanging width in the second isolation structure 412 and the overhanging width in the first isolation structure 411, and equalize the extension width in the second isolation structure 412 and the extension width in the first isolation structure 411, thereby improving the consistency of the overlap between the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0209] The first preset fixed value is the etching width of the conductive part 41 by the etching liquid for etching the cathode material layer 620 when etching the cathode material layer 620 at the second exposed area 74.

[0210] S202: evaporating a second sub-pixel in a second pixel slot.

[0211] The specific steps are described above and will not be repeated here.

[0212] It should be understood that when etching the cathode material layer 620 at the third exposed area 75, the etching liquid for etching the cathode material layer 620 will corrode the sidewall of the third pixel slot 53, so as to narrow the width of the conductive part 41 in the isolation structure 40 surrounding the third pixel slot 53 by the first preset fixed value again, so as to equalize the overhanging width in the third isolation structure 41340 and the overhanging width in the first isolation structure 411, and equalize the extension width in the third isolation structure 41340 and the extension width in the first isolation structure 411, thereby improving the consistency of the overlap between the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0213] The second preset fixed value is the etching width of the conductive part 41 by the etching liquid for etching the cathode material layer 620 when etching the cathode material layer 620 at the third exposed area 75.

[0214] That is, due to the evaporation process of the sub-pixel 60, the sidewall of the pixel groove 50 where the sub-pixel 60 formed later will be etched by the etching liquid of the etching cathode 62 material at least once. By compensating and adjusting the width of the eave structure 42 of the sidewall of the pixel groove 50 where the sub-pixel 60 formed later (i.e. the isolation structure 40), the etching condition of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50 is matched, so as to ensure that the overhanging width of each isolation structure 40 in the final product is the same, and then the lap consistency of the cathode 62 and the conductive part 41 of each sub-pixel 60 is improved, and the purpose of improving the lap effect is achieved.

[0215] S203: Evaporating a third sub-pixel in a third pixel groove.

[0216] Specifically, the light-emitting layer 61 and the cathode 62 of the third sub-pixel 60C are formed in the third pixel groove 53 by evaporation.

[0217] Please refer to Figure 3 , Figure 27 and Figure 28 , Figure 27 is Figure 25 the flowchart of an embodiment of step S203 in Figure 28 is Figure 27 the corresponding structural schematic diagram of steps S2031 and S2032 in

[0218] In an embodiment, step S203: evaporating a third sub-pixel in a third pixel groove, comprises:

[0219] S2031: removing the fifth photoresist layer, and forming a light-emitting material layer and a cathode material layer of the third sub-pixel and a third etching protection layer on the driving substrate in sequence.

[0220] Specifically, the fifth photoresist layer 85 is removed, and the light-emitting material layer 610 and the cathode material layer 620 of the third sub-pixel 60C and the third etching protection layer 93 are formed on the driving substrate 100 in sequence. The third etching protection layer 93 is used to protect the third sub-pixel 60C from etching when evaporating the sub-pixels 60 of the remaining colors.

[0221] S2032: arranging a sixth photoresist layer on the side of the cathode material layer of the third sub-pixel away from the driving substrate, and determining a fourth exposure area; etching the sixth photoresist layer, the third etching protection layer, the light-emitting material layer and the cathode material layer of the third sub-pixel at the fourth exposure area in sequence to form the third sub-pixel in the area outside the fourth exposure area.

[0222] Steps S2031 to S2032 are similar to steps S2021 to S2022, which will not be described here again, please refer to the above description.

[0223] The third sub-pixel 60C is located in the third pixel groove 53. The third sub-pixel 60C is formed by removing the sixth photoresist layer 86.

[0224] It should be noted that the first etching protection layer 91, the second etching protection layer 92 and the third etching protection layer 93 in the embodiments of the present application are all etching protection layers 90, only the order of preparation is different, and the positions are different, but the functions are the same.

[0225] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0226] The above is only the implementation of the present application, and does not limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation using the content of the present application specification and drawings, or direct or indirect application in other related technical fields, is also included in the patent protection scope of the present application.

Claims

1. A method for driving the production of a substrate, characterized by, The application relates to an OLED display panel and a manufacturing method thereof. The OLED display panel comprises a driving layer, an anode metal layer and a pixel definition layer which are sequentially arranged in layers; An isolation structure is formed on the side of the pixel definition layer away from the driving layer; The isolation structure surrounds a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially arranged in layers; the roof structure extends out of the conductive part in the direction close to the pixel slot; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as a hanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as an extension width; the pixel slot comprises a first pixel slot and a second pixel slot; in the isolation structure surrounding the first pixel slot, the hanging width is defined as a first hanging width, and the extension width is defined as a first extension width; in the isolation structure surrounding the second pixel slot, the hanging width is defined as a second hanging width, and the extension width is defined as a second extension width; the difference between the first hanging width and the second hanging width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value; the first pixel slot is used for forming a first sub-pixel. When the first preset fixed value is used for etching a cathode material layer for forming the first sub-pixel and located in the area outside the first sub-pixel, the etching width of the etching liquid for etching the cathode material layer to the conductive part.

2. The production method of a driving substrate according to claim 1, wherein The isolation structure is formed on the side of the pixel definition layer away from the driving layer, comprising: A conductive layer and a roof layer are sequentially formed on the side of the pixel definition layer away from the driving layer; The roof layer and the conductive layer are etched to form a pixel slot; the side wall of the pixel slot forms the isolation structure.

3. The production method of a driving substrate according to claim 2, wherein The roof layer and the conductive layer are etched to form a pixel slot, comprising: A to-be-etched area is determined on the roof layer, and the roof layer and the conductive layer at the to-be-etched area are etched to form a prefabricated pixel slot; the prefabricated pixel slot used for forming the first pixel slot is defined as a first prefabricated pixel slot, and the prefabricated pixel slot used for forming the second pixel slot is defined as a second prefabricated pixel slot; A mask area is determined on the roof layer which is not etched, and the roof layer outside the mask area is removed, so that the prefabricated pixel slot forms the pixel slot; In the wall thickness direction of the conductive layer, the interval between the inner side edge of the roof layer surrounding the first prefabricated pixel slot and the side edge of the adjacent mask area close to each other is a first interval, and the interval between the inner side edge of the roof layer surrounding the second prefabricated pixel slot and the side edge of the adjacent mask area close to each other is a second interval, The difference between the second interval and the first interval is the first preset fixed value.

4. The production method of a driving substrate according to claim 3, wherein The roof layer and the conductive layer are etched to form a pixel slot, comprising: Determining a to-be-etched region on the eave layer, etching the eave layer and the conductive layer at the to-be-etched region to form a pre-pixel groove; defining the pre-pixel groove for forming the first pixel groove as a first pre-pixel groove, the pre-pixel groove for forming the second pixel groove as a second pre-pixel groove, and the pre-pixel groove for forming the third pixel groove as a third pre-pixel groove; Determining a mask region on the eave layer which is not etched, and removing the eave layer outside the mask region to make the pre-pixel groove form the pixel groove; In the wall thickness direction of the conductive layer, the distance between the inner side edge of the eave layer surrounding the first pre-pixel groove and the side edge of the adjacent mask region is the first distance, the distance between the inner side edge of the eave layer surrounding the second pre-pixel groove and the side edge of the adjacent mask region is the second distance, and the distance between the inner side edge of the eave layer surrounding the third pre-pixel groove and the side edge of the adjacent mask region is the third distance; The difference between the second distance and the first distance is the first preset fixed value, and the difference between the third distance and the second distance is the second preset fixed value; The second pixel groove is used to form a second sub-pixel; The second preset fixed value is the etching width of the etching liquid for etching the cathode material layer outside the second sub-pixel when etching the cathode material layer for forming the second sub-pixel.

5. A drive substrate produced by the production method of the drive substrate according to any one of claims 1 to 4, characterized by The display panel comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are sequentially stacked; the isolation structure surrounds a pixel groove; the isolation structure comprises a conductive part and an eave structure which are sequentially stacked; the eave structure extends out of the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; In the wall thickness direction of the isolation structure, the width of the eave structure beyond the top of the conductive part is the overhanging width, and the width of the eave structure beyond the bottom of the conductive part is the extension width; The pixel groove comprises a first pixel groove and a second pixel groove; In the isolation structure surrounding the first pixel groove, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width; In the isolation structure surrounding the second pixel groove, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width; The difference between the first overhanging width and the second overhanging width is a first preset fixed value, and the first preset fixed value is a positive number; The difference between the first extension width and the second extension width is the first preset fixed value.

6. The drive substrate according to claim 5, wherein The pixel groove further comprises a third pixel groove, in the isolation structure surrounding the third pixel groove, the overhanging width is defined as a third overhanging width, and the extension width is defined as a third extension width; the difference between the second overhanging width and the third overhanging width is a second preset fixed value; the difference between the second extension width and the third extension width is the second preset fixed value; the second preset fixed value is a positive number; The second pixel groove is used to form a second sub-pixel; The second preset fixed value is an etching width of the cathode material layer when etching the cathode material layer used to form the second sub-pixel and located in an area outside the second sub-pixel.

7. The drive substrate according to claim 6, wherein The first preset fixed value is equal to the second preset fixed value.

8. The drive substrate according to claim 6, wherein The preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron; In a direction perpendicular to the pixel definition layer, the thickness of the eave structure is 0.1 microns to 0.3 microns, and the thickness of the conductive part is 0.6 microns to 1.5 microns; the eave structure has insulation.

9. The drive substrate according to claim 5, wherein The anode metal layer comprises a plurality of spaced anodes; the pixel groove is arranged corresponding to the anode and covers the area where the anode is located.

10. A method for manufacturing a display panel, characterized by, Comprise: A driving substrate is provided; The driving substrate is the driving substrate of claim 5; A sub-pixel is formed by evaporation in the pixel groove, and the cathode of the sub-pixel is overlapped with the conductive part; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in a first pixel groove, and the second sub-pixel is formed in a second pixel groove; The overhanging width of each isolation structure is equal, and the extension width of each isolation structure is equal; The sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence, which comprises: The light-emitting material layer and the cathode material layer of the first sub-pixel are formed by evaporation on the driving substrate in sequence; The first sub-pixel is etched; The light-emitting material layer and the cathode material layer of the second sub-pixel are formed by evaporation on the driving substrate in sequence; The second sub-pixel is etched.

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