Driving substrate and preparation method thereof, and preparation method of display panel

Abstract

The application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. By differentiating the overhanging widths of the isolation structures surrounding different pixel trenches and differentiating the extension widths, the etching conditions of the conductive parts in the preparation process of the sub-pixels arranged in the pixel trenches are matched, the widths of the etched conductive parts are compensated, and the widths of the conductive parts of the isolation structures in the final product are ensured to be the same. Further, by making the difference between the first overhanging width and the second overhanging width the same as the difference between the first extension width and the second extension width, the difference between the overhanging width and the extension width in a single isolation structure is ensured to be unchanged, so that the evaporation angles of the sub-pixels can be further ensured to be consistent when the sub-pixels are evaporated subsequently, and then the lap joint effect consistency of the cathodes of the sub-pixels and the conductive parts is facilitated to improve the conductive lap joint effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a driving substrate and a preparation method thereof, and a preparation method of a display panel. BACKGROUND

[0002] With the development of display technology, in order to reduce the cost, the OLED (Organic Light-Emitting Diode) display device in the cathode and the light-emitting layer is formed by removing the fine mask plate. The cathode is formed by evaporation. The cathode is overlapped with the isolation structure to realize the electrical connection between the cathodes.

[0003] However, the evaporation method has the risk of poor overlap between the cathode and the isolation structure. SUMMARY

[0004] The technical problem solved by the present application is to provide a driving substrate and a preparation method thereof, and a preparation method of a display panel, to solve the problem of poor overlap between the cathode and the isolation structure in the prior art.

[0005] To solve the above technical problem, the first technical solution provided by the present application is to provide a preparation method of a driving substrate, comprising:

[0006] providing a driving layer, an anode metal layer and a pixel definition layer which are sequentially stacked;

[0007] forming an isolation structure on the side of the pixel definition layer away from the driving layer;

[0008] The isolation structure surrounds the pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel slot; wherein, in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is the extension width; the pixel slot comprises a first pixel slot and a second pixel slot which are sequentially formed; in the isolation structure surrounding the first pixel slot, the overhanging width is defined as the first overhanging width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel slot, the overhanging width is defined as the second overhanging width, and the extension width is defined as the second extension width; the difference between the first overhanging width and the second overhanging width is a preset fixed value, and the preset fixed value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value.

[0009] The isolation structure is formed on the side of the pixel definition layer away from the driving layer, comprising:

[0010] sequentially forming a conductive layer and a roof layer on the side of the pixel definition layer away from the driving layer;

[0011] etching the eave layer and the conductive layer to form pixel trenches; side walls of the pixel trenches form isolation structures.

[0012] The method further includes:

[0013] determining a first to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the first to-be-etched region to form a first pixel trench in the pixel trenches; wherein a concentration of an etching solution for etching the conductive layer at the first to-be-etched region is a first etching concentration, and an etching reaction duration is a first reaction duration.

[0014] determining a second to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the second to-be-etched region to form a second pixel trench in the pixel trenches; wherein a concentration of an etching solution for etching the conductive layer at the second to-be-etched region is a second etching concentration, and an etching reaction duration is a second reaction duration; the second etching concentration is less than the first etching concentration, and / or the second reaction duration is less than the first reaction duration.

[0015] The method further includes:

[0016] determining a first to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the first to-be-etched region to form a first pixel trench in the pixel trenches; wherein a concentration of an etching solution for etching the conductive layer at the first to-be-etched region is a first etching concentration, and an etching reaction duration is a first reaction duration.

[0017] determining a second to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the second to-be-etched region to form a second pixel trench in the pixel trenches; wherein a concentration of an etching solution for etching the conductive layer at the second to-be-etched region is a second etching concentration, and an etching reaction duration is a second reaction duration; the second etching concentration is less than the first etching concentration, and / or the second reaction duration is less than the first reaction duration.

[0018] determining a third to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the third to-be-etched region to form a third pixel trench in the pixel trenches; wherein a concentration of an etching solution for etching the conductive layer at the third to-be-etched region is a third etching concentration, and an etching reaction duration is a third reaction duration; the third etching concentration is less than the second etching concentration, and / or the third reaction duration is less than the second reaction duration.

[0019] To solve the above technical problems, the second technical solution provided by the present application is to provide a driving substrate prepared by the preparation method of the driving substrate described above; wherein, the driving substrate comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are sequentially stacked; the isolation structure is arranged to form a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends the conductive part in the direction close to the pixel slot; in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is the extension width.

[0020] Among them, the width of the roof structure beyond the top of the conductive part in the wall thickness direction of the isolation structure is defined as the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as the extension width.

[0021] The pixel slot comprises a first pixel slot and a second pixel slot formed in sequence;

[0022] In the isolation structure surrounding the first pixel slot, the overhanging width is defined as the first overhanging width, and the extension width is defined as the first extension width;

[0023] In the isolation structure surrounding the second pixel slot, the overhanging width is defined as the second overhanging width, and the extension width is defined as the second extension width;

[0024] The difference between the first overhanging width and the second overhanging width is a preset fixed value, and the preset fixed value is a positive number;

[0025] The difference between the first extension width and the second extension width is a preset fixed value.

[0026] Among them, the pixel slot further comprises a third pixel slot, and the second pixel slot and the third pixel slot are sequentially formed; in the isolation structure surrounding the third pixel slot, the overhanging width is defined as the third overhanging width, and the extension width is defined as the third extension width; the difference between the second overhanging width and the third overhanging width is a preset fixed value; the difference between the second extension width and the third extension width is a preset fixed value.

[0027] Among them, the preset fixed value is less than or equal to 3 microns.

[0028] Among them, in the direction perpendicular to the pixel definition layer, the thickness of the roof structure is 0.1 microns to 0.3 microns, and the thickness of the conductive part is 0.6 microns to 1.5 microns;

[0029] The roof structure has conductivity, and the material of the roof structure is different from that of the conductive part; or, the roof structure has insulation.

[0030] Among them, the anode metal layer comprises a plurality of anodes arranged at intervals; the pixel slot is arranged corresponding to the anode, and covers the area where the corresponding anode is located.

[0031] To solve the above technical problems, the third technical solution provided by the present application is to provide a preparation method of a display panel, comprising:

[0032] A driving substrate is provided; the driving substrate is the driving substrate described above;

[0033] A sub-pixel is formed by evaporation in the pixel groove, and the cathode of the sub-pixel is overlapped with the conductive part; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0034] The beneficial effects of the present application are as follows: Different from the prior art, the present application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. The preparation method of the driving substrate comprises: providing a driving layer, an anode metal layer, and a pixel definition layer which are sequentially stacked; forming an isolation structure on the side of the pixel definition layer away from the driving layer; wherein the isolation structure is arranged to form a pixel groove; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel groove; wherein, in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is the overhanging width, and the width of the roof structure beyond the bottom of the conductive part is the extension width; the pixel groove comprises a first pixel groove and a second pixel groove formed in sequence; in the isolation structure surrounding the first pixel groove, the overhanging width is defined as the first overhanging width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhanging width is defined as the second overhanging width, and the extension width is defined as the second extension width; the difference between the first overhanging width and the second overhanging width is a preset fixed value, and the preset fixed value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value. By differentiating the overhanging width and the extension width of the isolation structure surrounding different pixel grooves, the corrosion condition of the conductive part in the preparation process of the sub-pixel arranged in the pixel groove is matched, so as to compensate the width of the corroded conductive part, so as to ensure that the width of the conductive part of each isolation structure in the final product is the same; further, by making the difference between the first overhanging width and the second overhanging width and the difference between the first extension width and the second extension width the same, the difference between the overhanging width and the extension width in a single isolation structure is ensured to be unchanged, so as to further ensure that the evaporation angle of each sub-pixel is consistent when the sub-pixel is evaporated subsequently, and then the consistency of the overlapping effect of the cathode and the conductive part of each sub-pixel is beneficial to improve the conductive overlapping effect. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0036] FIG. 1 is a structural schematic diagram of an embodiment of the driving substrate provided by the present application;

[0037] FIG. 2 is FIG. 1 is a sectional structural schematic diagram of A-A in FIG. 8;

[0038] FIG. 3 is a structural schematic diagram of a second embodiment of the driving substrate provided by the present application;

[0039] FIG. 4 is a structural schematic diagram of an embodiment of the pixel groove and the isolation structure provided by the present application;

[0040] FIG. 5 is a flow schematic diagram of a first embodiment of the preparation method of the driving substrate provided by the present application;

[0041] FIG. 6 is FIG. 5 is a structural schematic diagram corresponding to step S100 in FIG. 10;

[0042] FIG. 7 is FIG. 5 is a flow schematic diagram of an embodiment of step S200 in FIG. 12;

[0043] FIG. 8 is FIG. 7 is a structural schematic diagram corresponding to step S10 in FIG. 14;

[0044] FIG. 9 is FIG. 7 is a flow schematic diagram of an embodiment of step S20 in FIG. 16;

[0045] FIG. 10 is FIG. 9 is a flow schematic diagram of an embodiment of step S211 in FIG. 18;

[0046] FIG. 11 is FIG. 10 is a structural schematic diagram corresponding to steps S2111 to S2114 in FIG. 20;

[0047] FIG. 12 is FIG. 9 is a flow schematic diagram of an embodiment of step S212 in FIG. 22;

[0048] FIG. 13 is FIG. 12The structural diagram corresponding to step S2121 to S2124 in the middle step;

[0049] FIG. 14 The structural diagram corresponding to step S2011 and S2012 in the middle step; FIG. 7 The flow diagram of another embodiment of the middle step S20;

[0050] FIG. 15 The structural diagram corresponding to step S221 in the middle step; FIG. 14 The structural diagram corresponding to step S222 in the middle step;

[0051] FIG. 16 The structural diagram corresponding to step S222 in the middle step; FIG. 14 The structural diagram corresponding to step S222 in the middle step;

[0052] FIG. 17 The structural diagram corresponding to step S222 in the middle step; FIG. 14 The flow diagram of an embodiment of step S223 in the middle step;

[0053] FIG. 18 The structural diagram corresponding to step S2131 to S2134 in the middle step; FIG. 17 The structural diagram corresponding to step S2131 to S2134 in the middle step;

[0054] FIG. 19 The structural diagram corresponding to step S2131 to S2134 in the middle step; FIG. 5 The structural diagram corresponding to step 300 in the middle step;

[0055] FIG. 20 The flow diagram of an embodiment of the preparation method of the display panel provided in the present application;

[0056] FIG. 21 The structural diagram corresponding to step S1 in the middle step; FIG. 20 The structural diagram corresponding to step S1 in the middle step;

[0057] FIG. 22 The structural diagram corresponding to step S1 in the middle step; FIG. 20 The flow diagram of an embodiment of step S2 in the middle step;

[0058] FIG. 23 The structural diagram corresponding to step S201 in the middle step; FIG. 22 The structural diagram corresponding to step S201 in the middle step;

[0059] FIG. 24 The structural diagram corresponding to step S201 in the middle step; FIG. 22 The structural diagram corresponding to step S2011 and S2012 in the middle step;

[0060] FIG. 25 The structural diagram corresponding to step S2011 and S2012 in the middle step; FIG. 22 The flow diagram of an embodiment of step S202 in the middle step;

[0061] FIG. 26 The structural diagram corresponding to step S2021 and S2022 in the middle step; FIG. 25 The structural diagram corresponding to step S2021 and S2022 in the middle step;

[0062] FIG. 27 The structural diagram corresponding to step S2021 and S2022 in the middle step;FIG. 20 Flowchart of another embodiment in step S2;

[0063] FIG. 28 FIG. 27 Structural diagram corresponding to steps S201 and S202;

[0064] FIG. 29 FIG. 27 Flowchart of an embodiment in step S203;

[0065] FIG. 30 FIG. 29 Structural diagram corresponding to steps S2031 and S2032.

[0066] BRIEF DESCRIPTION OF DRAWINGS

[0067] 100, driving substrate; 10, driving layer; 11, planarization layer; 20, anode metal layer; 21, anode; 30, pixel definition layer; 31, pixel opening; 40, isolation structure; 40A, inner sidewall; 40B, outer sidewall; 41, conductive part; 42, eave structure; 411, first isolation structure; 412, second isolation structure; 413, third isolation structure; 50, pixel slot; 51, first pixel slot; 52, second pixel slot; 53, third pixel slot; d1, first overhang width; d2, second overhang width; d3, third overhang width; w1, first extension width; w2, second extension width; w3, third extension width; 410, conductive layer; 420, eave layer; 60, sub-pixel; 61, light-emitting layer; 62, cathode; 610, light-emitting material layer; 620, cathode material layer; 71, first to-be-etched region; 72, second to-be-etched region; 73, third to-be-etched region; 74, fourth to-be-etched region; 75, fifth to-be-etched region; 76, sixth to-be-etched region; 81, first photoresist layer; 82, second photoresist layer; 83, third photoresist layer; 84, fourth photoresist layer; 85, fifth photoresist layer; 86, sixth photoresist layer; 87, seventh photoresist layer; 90, etching protection layer; 91, first etching protection layer; 92, second etching protection layer; 93, third etching protection layer; 200, display panel. DETAILED DESCRIPTION

[0068] The scheme of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0069] In the following description, specific details are set forth such as particular system configurations, interfaces, techniques, etc., in order to provide a thorough understanding of the present application. However, techniques have been known to those skilled in the art before the present application.

[0070] ​​​With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort are within the scope of the present application.

[0071] The terms “first”, “second”, “third” in the present application are only for descriptive purpose, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with “first”, “second”, “third” can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of “plurality” is at least two, for example, two, three, etc., unless otherwise explicitly and specifically limited. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly. In addition, the terms “include” and “have” and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0072] In this document, reference to “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive of one another. As will be apparent to those of ordinary skill in the art, embodiments described herein can be combined with other embodiments.

[0073] In the prior art, in the process of evaporating sub-pixels by removing a fine mask, an isolation structure is needed to isolate the sub-pixels. The isolation structure includes a conductive part and a roof structure, and the cathodes of the sub-pixels are overlapped with the conductive part to realize electrical connection between the cathodes. The roof structure is used to adjust the evaporation angle of the evaporation material, so that the cathode can be well overlapped with the conductive part.

[0074] However, due to the difference in the light-emitting layer of the sub-pixels of different colors, the sub-pixels of different colors need to be prepared in sequence. After the light-emitting layer and the cathode of the sub-pixels of one color are evaporated on the whole surface, only the light-emitting layer and the cathode at the position of the sub-pixels of this color are reserved, and the light-emitting layer and the cathode of the sub-pixels of other colors at the position of the sub-pixels of this color need to be removed. Then, the photoresist is exposed and developed, the light-emitting layer and the cathode of the sub-pixels of another color are continuously evaporated on the whole surface, only the light-emitting layer and the cathode at the position of the sub-pixels of this color are reserved, and the light-emitting layer and the cathode of the sub-pixels of other colors at the position of the sub-pixels of this color need to be removed. The above steps are repeated in sequence to evaporate the sub-pixels of other colors. In the process of removing the cathode, an etching liquid is used to react with the cathode to remove the cathode. However, in the process of removing the cathode, the etching liquid also reacts with the conductive part, causing the conductive part to be corroded and the width of the conductive part to be narrowed. In the case where the width of the conductive part is narrowed, it is not conducive to the overlap of the cathode and the conductive part in the subsequent film layer deposition process of the sub-pixels, thereby causing the overlap to be invalid, the electrical signal cannot be connected, and the light-emission of the sub-pixels is affected.

[0075] Please refer to FIG. 1 and FIG. 2 , FIG. 1 is a structure schematic diagram of an embodiment of the driving substrate provided by the present application, FIG. 2 is FIG. 1 a cross-sectional structure schematic diagram of A-A in

[0076] To solve the above technical problems, the present application provides a driving substrate 100. The driving substrate 100 comprises a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40 which are sequentially stacked. The isolation structure 40 is arranged to form a pixel groove 50. The isolation structure 40 comprises a conductive part 41 and a roof structure 42 which are sequentially stacked. The roof structure 42 extends out of the conductive part 41 in the direction close to the pixel groove 50. In the wall thickness direction of the isolation structure 40, the width of the roof structure 42 is equal. Among them, the width of the roof structure 42 exceeding the top of the conductive part 41 in the wall thickness direction of the isolation structure 40 is defined as the overhanging width, and the width of the roof structure 42 exceeding the bottom of the conductive part 41 is defined as the extension width. The pixel groove 50 comprises a first pixel groove 51 and a second pixel groove 52 which are sequentially formed. In the isolation structure 40 surrounding the first pixel groove 51, the overhanging width is defined as the first overhanging width d1, and the extension width is defined as the first extension width w1. In the isolation structure 40 surrounding the second pixel groove 52, the overhanging width is defined as the second overhanging width d2, and the extension width is defined as the second extension width w2. The difference between the first overhanging width d1 and the second overhanging width d2 is a preset fixed value, and the preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is a preset fixed value.

[0077] By differentiating the overhanging width of the isolation structure 40 surrounding the different pixel trenches 50, and differentiating the extension width, the etching condition of the conductive part 41 in the manufacturing process of the sub-pixel 60 (see FIG. 24 ) arranged in the pixel trench 50 is matched, so as to compensate the width of the etched conductive part 41, to ensure that the width of the conductive part 41 of each isolation structure 40 in the final product is the same; further, by making the difference between the first overhanging width d1 and the second overhanging width d2 the same as the difference between the first extension width w1 and the second extension width w2, the difference between the overhanging width and the extension width in a single isolation structure 40 is ensured to be unchanged, so as to further ensure the consistency of the evaporation angle of each sub-pixel 60 when the sub-pixel 60 is subsequently evaporated, and then the consistency of the lapping effect of the cathode 62 (see FIG. 24 ) of each sub-pixel 60 and the conductive part 41 is improved to improve the conductive lapping effect.

[0078] It should be noted that the driving substrate 100 in the embodiment of the present application is an intermediate product in the process of manufacturing the display panel, and the subsequent evaporation of the sub-pixel 60 in the display panel is performed on the basis of the driving substrate 100.

[0079] The driving layer 10 is electrically connected with the anode metal layer 20, and is used to drive the sub-pixel 60 in the display panel to emit light. The structure and material of the driving layer 10 are not limited here, and are selected according to actual needs.

[0080] The flat layer 11 is further included between the driving layer 10 and the anode metal layer 20, and the material of the flat layer 11 is not limited here, and is selected according to actual needs.

[0081] The anode metal layer 20 includes a plurality of anodes 21 arranged at intervals. The pixel trench 50 is arranged corresponding to the anode 21, and covers the area where the corresponding anode 21 is located. The anode 21 is an electrode of the sub-pixel 60.

[0082] The pixel trench 50 is arranged corresponding to the anode 21, and covers the area where the corresponding anode 21 is located. It can be understood that one pixel trench 50 corresponds to at least one anode 21, and the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel trench 50 corresponds to one anode 21, the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel trench 50 corresponds to a plurality of anodes 21, the orthographic projection of the pixel trench 50 on the driving layer 10 covers the orthographic projection of the corresponding plurality of anodes 21 on the driving layer 10.

[0083] In the embodiment, one pixel trench 50 corresponds to one anode 21.

[0084] The pixel definition layer 30 can be an inorganic material, such as a silicon oxide compound, a silicon nitride compound, or a silicon oxynitride compound. The thickness of the pixel definition layer 30 is 0.2 microns to 1 micron, and in an embodiment, the thickness of the pixel definition layer 30 is 0.4 microns to 0.6 microns.

[0085] In other embodiments, the pixel definition layer 30 can be other materials, and / or the thickness of the pixel definition layer 30 can be other values.

[0086] The isolation structure 40 surrounds to form the pixel groove 50, and it can be understood that the sidewall of the pixel groove 50 is the isolation structure 40. The isolation structure 40 is a ring structure.

[0087] In the outer sidewall 40B of the isolation structure 40 in the embodiment, the outer wall surface of the eave structure 42 and the outer wall surface of the conductive part 41 are arranged in alignment in a direction perpendicular to the pixel definition layer 30.

[0088] In the wall thickness direction of the isolation structure 40, the width of the eave structure 42 is equal, that is, in the embodiment, the width of the conductive part 41 is adjusted based on the condition that the width of each eave structure 42 is unchanged, so that the overhanging width and the extension width of the isolation structure 40 surrounding different pixel grooves 50 are different, thereby compensating for the width of the conductive part 41 that is corroded, so as to ensure that the width of the conductive part 41 of each isolation structure 40 in the final product is the same.

[0089] The eave structure 42 extends the conductive part 41 in the direction close to the pixel groove 50, so that the evaporation angle can be adjusted through the edge of the eave structure 42 when the sub-pixel 60 is subsequently evaporated in the pixel groove 50. It should be understood that in the wall thickness direction of the isolation structure 40, the greater the width of the conductive part 41 extended by the eave structure 42 in the direction close to the pixel groove 50, the less likely the cathode 62 of the evaporated sub-pixel 60 is to be overlapped with the conductive part 41.

[0090] In the wall thickness direction of the isolation structure 40, the width of the eave structure 42 beyond the top of the conductive part 41 is the overhanging width, and the width of the eave structure 42 beyond the bottom of the conductive part 41 is the extension width. That is, in the wall thickness direction of the isolation structure 40, the spacing between the inner edge of the lower surface of the eave structure 42 and the inner edge of the upper surface of the conductive part 41 is the overhanging width, and the spacing between the inner edge of the lower surface of the eave structure 42 and the inner edge of the lower surface of the conductive part 41 is the extension width.

[0091] It should be noted that the inner side and the outer side in the embodiment refer to the relative two sides in the wall thickness direction of the isolation structure 40.

[0092] The pixel groove 50 includes a first pixel groove 51 and a second pixel groove 52 formed in sequence, and it can be understood that the first pixel groove 51 is prepared before the second pixel groove 52. The pixel groove 50 can also include a plurality of pixel grooves 50 divided in the order of preparation, and here only two pixel grooves 50 are taken as an example for description.

[0093] The shape and size of the first pixel groove 51 and the second pixel groove 52 are not limited here, and can be selected according to actual needs.

[0094] In the isolation structure 40 surrounding the first pixel groove 51, the overhanging width is defined as the first overhanging width d1, and the extension width is defined as the first extension width w1, that is, the overhanging width of the isolation structure 40 surrounding the first pixel groove 51 is the first overhanging width d1, and the extension width of the isolation structure 40 surrounding the first pixel groove 51 is the first extension width w1.

[0095] The first overhanging width d1 is greater than or equal to 0.4 microns and less than or equal to 1 micron, and the deviation of the first overhanging width d1 satisfies 0≤d1≤0.2 microns, so as to better make the cathode 62 in the sub-pixel 60 overlap with the conductive part 41, and separate the light-emitting layer 61 (see FIG. 24 ) in the sub-pixel 60 of different colors.

[0096] In the isolation structure 40 surrounding the second pixel groove 52, the overhanging width is defined as the second overhanging width d2, and the extension width is defined as the second extension width w2, that is, the overhanging width of the isolation structure 40 surrounding the second pixel groove 52 is the second overhanging width d2, and the extension width of the isolation structure 40 surrounding the second pixel groove 52 is the second extension width w2.

[0097] The overhanging width of the isolation structure 40 surrounding the first pixel groove 51 is the first overhanging width d1, and the extension width of the isolation structure 40 surrounding the first pixel groove 51 is the second extension width w2.

[0098] The difference between the first overhanging width d1 and the second overhanging width d2 is a preset fixed value, and the preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is a preset fixed value. It can be understood that the difference between the first overhanging width d1 and the second overhanging width d2 is the first overhanging difference, and the difference between the first extension width w1 and the second extension width w2 is the first extension difference. The first overhanging difference is equal to the first extension difference.

[0099] The preset fixed value is less than or equal to 3 microns, so as to control the etching amount of the conductive part 41 in the subsequent process of evaporating the sub-pixel 60. It can be understood that the etching amount of the conductive part 41 is not infinite in the subsequent process of evaporating the sub-pixel 60, and selecting the preset fixed value in this range is helpful to compensate the conductive part 41 of different isolation structures 40 in a targeted and differential manner.

[0100] In a direction perpendicular to the pixel definition layer 30, the thickness of the eave structure 42 is 0.1 microns to 0.3 microns, and the thickness of the conductive part 41 is 0.6 microns to 1.5 microns. The eave structure 42 has conductivity, and the material of the eave structure 42 is different from that of the conductive part 41; or the eave structure 42 has insulation.

[0101] When the eave structure 42 has conductivity, the eave structure 42 can be a metal film layer, for example, aluminum, copper, nickel, silver, molybdenum, titanium, etc. The material of the eave structure 42 is different from that of the conductive part 41, and the chemical reaction rate is also different, so as to ensure that the eave structure 42 can extend out of the conductive part 41 when etching the conductive part 41 and the eave structure 42.

[0102] When the eave structure 42 has insulation, the eave structure 42 can be an inorganic film layer, for example, silicon oxide compound, silicon nitride compound, or silicon oxynitride compound. The eave structure 42 can also be an organic compound film layer, for example, soluble polytetrafluoroethylene (PFA), PI (Polyimide, polyimide), etc.

[0103] The present embodiment takes the eave structure 42 as an insulating material as an example for description.

[0104] The isolation structure 40 defining the first pixel groove 51 is defined as a first isolation structure 411, and the isolation structure 40 defining the second pixel groove 52 is defined as a second isolation structure 412. In the adjacent first pixel groove 51 and second pixel groove 52, the outer side wall 40B of the first isolation structure 411 is in contact with the outer side wall 40B of the second isolation structure 412, and is arranged in parallel to the pixel definition layer 30.

[0105] The first pixel groove 51 is prepared before the second pixel groove 52, so that the inner side wall 40A of the first isolation structure 411 is formed first, and the inner side wall 40A of the second isolation structure 412 is formed later.

[0106] It should be noted that in the subsequent process of evaporating the sub-pixel 60 on the driving substrate 100, the sub-pixel 60 is sequentially evaporated in the first pixel groove 51 and the second pixel groove 52 in order, and the colors of the sub-pixels 60 evaporated in the first pixel groove 51 and the second pixel groove 52 are different.

[0107] It can be understood that, in the thickness direction of the isolation structure 40, by ensuring that the width of the eave structure 42 in each isolation structure 40 is unchanged, the width of the conductive part 41 in the sequentially formed isolation structure 40 is sequentially increased, so that the width of the eave structure 42 extending out of the conductive part 41 in the sequentially formed isolation structure 40 is sequentially reduced. Further, in the process of subsequently evaporating the sub-pixel 60, the evaporation sequence of sub-pixels 60 of different colors is consistent with the formation sequence of the pixel groove 50 in which the sub-pixel 60 of this color is located, so as to match the etching of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50, so as to compensate the width of the etched conductive part 41, so as to ensure that the width of the conductive part 41 of each isolation structure 40 is the same in the final product, and the lap effect of the cathode 62 of each sub-pixel 60 and the conductive part 41 is improved.

[0108] In the present embodiment, the pixel definition layer 30 is etched to expose the anode 21, so that the pixel definition layer 30 does not need to be etched again in the subsequent process of evaporating the sub-pixel 60, and the steps can be simplified. Specifically, the pixel definition layer 30 has a plurality of pixel openings 31 arranged at intervals. The pixel openings 31 are arranged one by one with the anodes 21. The pixel openings 31 at least partially expose the corresponding anodes 21. That is, the anodes 21 are exposed to the pixel definition layer 30 through the pixel openings 31.

[0109] In other embodiments, the pixel definition layer 30 can not be etched, and the pixel openings 31 can be etched before evaporating the sub-pixel 60.

[0110] The driving substrate 100 can further include a protective film (not shown in the figure) arranged on the side of the isolation structure 40 away from the driving layer 10. The protective film is used to protect the conductive part 41 from corrosion by the external environment during storage and transportation of the driving substrate 100. It should be understood that the protective film needs to be removed when the sub-pixel 60 is evaporated on the driving substrate 100.

[0111] Please refer to FIG. 1 to FIG. 4 , FIG. 3 is a structural schematic diagram of a second embodiment of the driving substrate provided by the present application, FIG. 4 is a schematic diagram of the arrangement structure of an embodiment of the pixel groove and the isolation structure provided by the present application.

[0112] The second embodiment of the driving substrate 100 provided by the present application is basically similar in structure to the first embodiment of the driving substrate 100 provided by the present application, and the difference lies in that the pixel groove 50 further includes a third pixel groove 53, and the second pixel groove 52 and the third pixel groove 53 are sequentially formed in order.

[0113] In the present embodiment, the pixel groove 50 further comprises a third pixel groove 53, and the second pixel groove 52 and the third pixel groove 53 are sequentially formed in order. That is, the pixel groove 50 comprises the first pixel groove 51, the second pixel groove 52 and the third pixel groove 53 sequentially formed in order.

[0114] In the isolation structure 40 surrounding the third pixel groove 53, the overhang width is defined as a third overhang width d3, and the extension width is defined as a third extension width w3. That is, the overhang width in the isolation structure 40 surrounding the third pixel groove 53 is the third overhang width d3, and the extension width in the isolation structure 40 surrounding the third pixel groove 53 is the third extension width w3.

[0115] The difference between the second overhang width d2 and the third overhang width d3 is a preset fixed value. The difference between the second extension width w2 and the third extension width w3 is a preset fixed value. That is, the difference between the second overhang width d2 and the third overhang width d3 is a second overhang difference, and the difference between the second extension width w2 and the third extension width w3 is a second extension difference. The second overhang difference is equal to the second extension difference, and is equal to the first overhang difference.

[0116] The present embodiment can also improve the lap joint effect of the cathode 62 of the sub-pixel 60 and the conductive part 41. Compared with the first embodiment of the driving substrate 100 provided by the present application, the driving substrate 100 of the present embodiment can evaporate more color types of sub-pixels 60 in the subsequent evaporation process of the sub-pixel 60.

[0117] In other embodiments, the pixel groove 50 can further comprise more than three pixel grooves 50 sequentially formed in order. In two pixel grooves 50 adjacent in formation order, the difference between the overhang width in the isolation structure 40 surrounding the first formed pixel groove 50 and the overhang width in the isolation structure 40 surrounding the second formed pixel groove 50 is a preset fixed value, and the difference between the extension width in the isolation structure 40 surrounding the first formed pixel groove 50 and the extension width in the isolation structure 40 surrounding the second formed pixel groove 50 is a preset fixed value. The same applies sequentially.

[0118] The arrangement of the pixel groove 50 is not limited here, and can be selected according to actual needs. For example, as shown in FIG. 1B, the first pixel groove 51 and the second pixel groove 52 are located on the same side of the third pixel groove 53. The first pixel groove 51, the second pixel groove 52 and the third pixel groove 53, and the isolation structure 40 surrounding the pixel groove 50, form a smallest repeating unit. The repeating unit is a rectangle. FIG. 4

[0119] Please refer to FIG. 2 , FIG. 5 and FIG. 6 , FIG. 5 ​is a flowchart of a first embodiment of a preparation method of a driving substrate provided in the present application, FIG. 6 is FIG. 5 is a structural diagram corresponding to step S100 in

[0120] The present application provides a preparation method of a driving substrate. The preparation method of the driving substrate is used to prepare the driving substrate described above.

[0121] In an embodiment, the preparation method of the driving substrate comprises:

[0122] S100: providing a driving layer, an anode metal layer, and a pixel definition layer which are sequentially and layerwisely arranged.

[0123] Specifically, a driving layer 10, an anode metal layer 20, and a pixel definition layer 30 which are sequentially and layerwisely arranged are provided.

[0124] The driving substrate 100 further comprises a planar layer 11 which is located between the driving layer 10 and the anode metal layer 20.

[0125] S200: forming an isolation structure on a side of the pixel definition layer away from the driving layer; wherein the isolation structure encloses a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially and layerwisely arranged; the roof structure extends out of the conductive part in a direction close to the pixel slot; in a wall thickness direction of the isolation structure, the width of the roof structure is equal; wherein, in the wall thickness direction of the isolation structure, the width of the roof structure beyond the top of the conductive part is defined as a overhanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as an extension width; the pixel slot comprises a first pixel slot and a second pixel slot which are sequentially and layerwisely arranged; in the isolation structure enclosing the first pixel slot, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width; in the isolation structure enclosing the second pixel slot, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width; the difference between the first overhanging width and the second overhanging width is a preset fixed value, and the preset fixed value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value.

[0126] Here, the isolation structure 40 and the pixel slot 50 are not described in detail, and reference is made to the above description.

[0127] Please refer to FIG. 2 , FIG. 7 and FIG. 8 , FIG. 7 is FIG. 5 is a flowchart of an embodiment of step S200 in FIG. 8 is FIG. 7 is a structural diagram corresponding to step S10 in

[0128] In an embodiment, the step of forming the isolation structure on the side of the pixel definition layer away from the driving layer in step S200 comprises:

[0129] S10: sequentially forming a conductive layer and a roof layer on the side of the pixel definition layer away from the driving layer.

[0130] Specifically, the conductive layer 410 and the roof layer 420 are sequentially formed on the side of the pixel definition layer 30 away from the driving layer 10.

[0131] S20: etching the roof layer and the conductive layer to form a pixel slot; the sidewall of the pixel slot forms the isolation structure.

[0132] Specifically, the roof layer 420 and the conductive layer 410 are etched to form the pixel slot 50. The sidewall of the pixel slot 50 forms the isolation structure 40. The conductive layer 410 is etched to obtain the conductive part 41, and the roof layer 420 is etched to obtain the roof structure 42.

[0133] It should be noted that the isolation structure 40 surrounding the different pixel slots 50 is not obtained by the same process, but is obtained by multiple processes.

[0134] Please refer to FIG. 2 and FIG. 9 , FIG. 9 are FIG. 7 a flowchart of an embodiment of step S20 in

[0135] In a specific embodiment, step S20: etching the roof layer and the conductive layer to form a pixel slot; the sidewall of the pixel slot forms the isolation structure, comprises:

[0136] S211: determining a first to-be-etched region on the roof layer, and etching the roof layer and the conductive layer at the first to-be-etched region to form a first pixel slot in the pixel slot; wherein the concentration of the etching solution for etching the conductive layer at the first to-be-etched region is a first etching concentration, and the etching reaction time is a first reaction time.

[0137] Specifically, a first to-be-etched region 71 is determined on the roof layer 420 by exposure and development, and the roof layer 420 and the conductive layer 410 at the first to-be-etched region 71 are etched to form a first pixel slot 51 in the pixel slot 50; wherein the concentration of the etching solution for etching the conductive layer 410 at the first to-be-etched region 71 is a first etching concentration, and the etching reaction time is a first reaction time.

[0138] The first to-be-etched region is arranged one-to-one corresponding to the first pixel slot 51.

[0139] Here, the etching solution, the first etching concentration and the first reaction time are not limited, and are selected according to actual needs.

[0140] Please refer to FIG. 2 、 FIG. 10 and FIG. 11 , FIG. 10 is FIG. 9 a flowchart of an embodiment of step S211 in FIG. 11 is FIG. 10 a structural diagram corresponding to steps S2111-S2114 in

[0141] In an embodiment, the step of determining a first to-be-etched region on the eave layer in step S211, and etching the eave layer and the conductive layer at the first to-be-etched region to form a first pixel slot in the pixel slots comprises:

[0142] S2111: disposing a first photoresist layer on a side of the eave layer away from the conductive layer.

[0143] S2112: exposing and developing the first photoresist layer to determine the first to-be-etched region on the eave layer and remove the first photoresist layer at the first to-be-etched region.

[0144] S2113: etching to remove the eave layer at the first to-be-etched region.

[0145] Specifically, when the eave layer 420 is conductive, a wet etching method can be used to remove the eave layer 420 at the first to-be-etched region 71. When the eave layer 420 is insulating, a dry etching method can be used to remove the eave layer 420 at the first to-be-etched region 71.

[0146] In this embodiment, the eave layer 420 is insulating, and a dry etching method is used to remove the eave layer 420 at the first to-be-etched region 71.

[0147] In other embodiments, other methods can also be used to remove the eave layer 420 at the first to-be-etched region 71.

[0148] S2114: etching to remove the conductive layer at the first to-be-etched region to obtain a first pixel slot.

[0149] Specifically, a wet etching method is used to remove the conductive layer 410 at the first to-be-etched region 71 to obtain the first pixel slot 51.

[0150] S212: determining a second to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the second to-be-etched region to form a second pixel slot in the pixel slots; wherein the etching solution used to etch the conductive layer at the second to-be-etched region has a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0151] Specifically, the second to-be-etched region 72 is determined on the eave layer 420 by exposure and development, and the eave layer 420 and the conductive layer 410 at the second to-be-etched region 72 are etched to form the second pixel groove 52 in the pixel groove 50. The etching liquid for etching the conductive layer 410 at the second to-be-etched region 72 has a second etching concentration, and the etching reaction lasts for a second reaction time. The second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0152] The second to-be-etched region is arranged one-to-one with the second pixel groove 52.

[0153] The etching liquid for etching the conductive layer 410 at the second to-be-etched region 72 is the same as the etching liquid for etching the conductive layer 410 at the first to-be-etched region 71, so as to calculate a preset fixed value, thereby more accurately compensating the width of the conductive part 41.

[0154] The second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time, so that the width of the conductive part 41 etched at the second to-be-etched region 72 is less than the width of the conductive part 41 etched at the first to-be-etched region 71, thereby ensuring that the width of the conductive part 41 in the later-formed isolation structure 40 is greater than the width of the conductive part 41 in the earlier-formed isolation structure 40, so as to match the etching of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50 in the subsequent evaporation process of the sub-pixel 60, thereby compensating the width of the etched conductive part 41, so as to ensure that the widths of the conductive parts 41 of the isolation structures 40 in the final product are the same.

[0155] Please refer to FIG. 2 , FIG. 12 and FIG. 13 , FIG. 12 is FIG. 9 a flowchart of an embodiment of step S212 in FIG. 13 is FIG. 12 the corresponding structural diagram of steps S2121 to S2124 in

[0156] In an embodiment, the step of determining the second to-be-etched region on the eave layer and etching the eave layer and the conductive layer at the second to-be-etched region to form the second pixel groove in the pixel groove in step S212 includes:

[0157] S2121: removing the first photoresist layer and arranging a second photoresist layer on the side of the eave layer away from the conductive layer.

[0158] S2122: exposing and developing the second photoresist layer to determine the second to-be-etched region on the eave layer and remove the second photoresist layer at the second to-be-etched region.

[0159] S2123: etching to remove the eave layer at the second etching region.

[0160] Specifically, the eave layer 420 at the second etching region 72 is etched to be removed.

[0161] In this embodiment, the eave layer 420 is insulating, and the eave layer 420 at the second etching region 72 is removed by dry etching.

[0162] S2124: etching to remove the conductive layer at the second etching region to obtain a second pixel slot.

[0163] Specifically, the conductive layer 410 at the second etching region 72 is removed by wet etching to obtain the first pixel slot 51.

[0164] Please refer to FIG. 3 , FIG. 14 to FIG. 16 , FIG. 14 is a flowchart of another embodiment of step S20 in FIG. 7 is a structural diagram corresponding to step S221 in FIG. 15 is a structural diagram corresponding to step S222 in FIG. 14 is a structural diagram corresponding to step S222 in FIG. 16 is a structural diagram corresponding to step S222 in FIG. 14 is a structural diagram corresponding to step S222 in

[0165] In another specific embodiment, step S20: etching the eave layer and the conductive layer to form a pixel slot; the sidewall of the pixel slot forms an isolation structure, comprising:

[0166] S221: determining a first etching region on the eave layer, etching the eave layer and the conductive layer at the first etching region to form a first pixel slot in the pixel slot; wherein the concentration of the etching solution for etching the conductive layer at the first etching region is a first etching concentration, and the etching reaction time is a first reaction time.

[0167] For specific steps, please refer to step S211, which will not be repeated here.

[0168] S222: determining a second etching region on the eave layer, etching the eave layer and the conductive layer at the second etching region to form a second pixel slot in the pixel slot; wherein the concentration of the etching solution for etching the conductive layer at the second etching region is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0169] For specific steps, please refer to step S212, which will not be repeated here.

[0170] S223: determining a third to-be-etched region on the eave layer, and etching the eave layer and the conductive layer at the third to-be-etched region to form a third pixel slot in the pixel slot; wherein a concentration of an etching solution for etching the conductive layer at the third to-be-etched region is a third etching concentration, and an etching reaction duration is a third reaction duration; the third etching concentration is less than the second etching concentration, and / or the third reaction duration is less than the second reaction duration.

[0171] Specifically, a third to-be-etched region 73 is determined on the eave layer 420 by exposure and development, and the eave layer 420 and the conductive layer 410 at the third to-be-etched region 73 are etched to form a third pixel slot 53 in the pixel slot 50. Wherein the concentration of the etching solution for etching the conductive layer 410 at the third to-be-etched region 73 is a third etching concentration, and the etching reaction duration is a third reaction duration. The third etching concentration is less than the second etching concentration, and / or the third reaction duration is less than the second reaction duration.

[0172] The third etching region is arranged one by one corresponding to the third pixel slot 53.

[0173] The etching solution for etching the conductive layer 410 at the third to-be-etched region 73 is the same kind of etching solution as the etching solution for etching the conductive layer 410 at the first to-be-etched region 71.

[0174] The third etching concentration is less than the first etching concentration and less than the second etching concentration; and / or the third reaction duration is less than the first reaction duration and less than the second reaction duration, so as to ensure that the width of the conductive part 41 etched at the third to-be-etched region 73 is less than the width of the conductive part 41 etched at the second to-be-etched region 72. For specific effects, please refer to the above description, which will not be repeated here.

[0175] Please refer to FIG. 3 , FIG. 17 and FIG. 18 , FIG. 17 is FIG. 14 a flowchart corresponding to an embodiment of step S223 in FIG. 18 is FIG. 17 a structural schematic diagram corresponding to steps S2131 to S2134 in

[0176] In a specific embodiment, the step of determining a third to-be-etched region on the eave layer and etching the eave layer and the conductive layer at the third to-be-etched region to form a third pixel slot in the pixel slot in step S223 comprises:

[0177] S2131: removing the second photoresist layer, and arranging a third photoresist layer on the side of the eave layer away from the conductive layer.

[0178] S2132: Exposing and developing the third photoresist layer to determine a third to-be-etched region on the eave layer and remove the third photoresist layer at the third to-be-etched region.

[0179] S2133: Etching to remove the eave layer at the third to-be-etched region.

[0180] S2134: Etching to remove the conductive layer at the third to-be-etched region to obtain a third pixel slot.

[0181] Steps S2131 to S2134 are the same as steps S2111 to S2114, and specific steps refer to steps S2111 to S2114, which will not be described here.

[0182] Please refer to FIG. 3 and FIG. 19 , FIG. 19 is FIG. 5 the structural schematic diagram corresponding to step 300 in

[0183] After step S200, it further includes:

[0184] S300: Forming a pixel opening on the pixel definition layer, the pixel slot is arranged corresponding to the pixel opening and covers the corresponding pixel opening.

[0185] Specifically, the third photoresist layer 83 is removed, and a fourth photoresist layer 84 is arranged on the side of the eave layer 420 away from the pixel definition layer 30. The fourth photoresist layer 84 is exposed and developed to determine a fourth to-be-etched region 74 on the pixel definition layer 30. The pixel definition layer 30 at the fourth to-be-etched region 74 is removed to form a pixel opening 31.

[0186] The fourth to-be-etched region 74 is arranged corresponding to the pixel slot 50 and located in the pixel slot 50.

[0187] The structure of the pixel opening 31 will not be described here, and refer to the above description.

[0188] It should be understood that in other embodiments, step S300 can not be included.

[0189] Please refer to FIG. 2 , FIG. 20 and FIG. 21 , FIG. 20 is a flowchart of an embodiment of the method for manufacturing the display panel provided in the present application, FIG. 21 is FIG. 20 the structural schematic diagram corresponding to step S1 in

[0190] The application provides a display panel manufacturing method. The display panel 200 comprises a sub-pixel 60 and an etching protection layer 90 arranged on one side of the sub-pixel 60, and further comprises a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40. The sub-pixel 60 comprises an anode 21, a light-emitting layer 61 and a cathode 62 arranged in sequence.

[0191] The display panel manufacturing method comprises:

[0192] S1: providing a driving substrate.

[0193] Specifically, a driving substrate 100 is provided. The driving substrate 100 is the driving substrate 100 described above, and the structure of the driving substrate 100 is not described here, and reference is made to the description above.

[0194] S2: forming a sub-pixel in the pixel groove by evaporation, and making the cathode of the sub-pixel and the conductive part overlap; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in a first pixel groove, and the second sub-pixel is formed in a second pixel groove.

[0195] Please refer to FIG. 2 、 FIG. 22 to FIG. 24 , FIG. 22 is FIG. 20 the flowchart of an embodiment of step S2 in FIG. 23 is FIG. 22 the flowchart of an embodiment of step S201 in FIG. 24 is FIG. 22 the corresponding structural schematic diagram of steps S2011 and S2012 in

[0196] In an embodiment, the step of forming a sub-pixel in the pixel groove by evaporation and making the cathode of the sub-pixel and the conductive part overlap in step S2 comprises:

[0197] S201: evaporating a first sub-pixel in a first pixel groove.

[0198] Specifically, the light-emitting layer 61 and the cathode 62 of the first sub-pixel 60 are formed in the first pixel groove 51 by evaporation.

[0199] In an embodiment, step S201 specifically comprises:

[0200] S2011: forming a light-emitting material layer and a cathode material layer of the first sub-pixel and a first etching protection layer on the driving substrate in sequence.

[0201] Specifically, the light-emitting material layer 610 and the cathode material layer 620 of the first sub-pixel 60 are sequentially formed on the driving substrate 100 by evaporation, and the first etching protection layer 91 is formed.

[0202] S2012: A fifth photoresist layer is arranged on the side of the cathode material layer away from the driving substrate, and a fourth to-be-etched region is determined; the fifth photoresist layer, the first etching protection layer, the light-emitting material layer and the cathode material layer at the fourth to-be-etched region are sequentially etched to form the first sub-pixel in the region outside the fourth to-be-etched region.

[0203] Specifically, the fifth photoresist layer 85, the first etching protection layer 91, the light-emitting material layer 610 and the cathode material layer 620 at the fourth to-be-etched region 74 are sequentially etched to form the first sub-pixel 60 in the region outside the fourth to-be-etched region 74.

[0204] It should be noted that the cathode material layer 620 is etched by using a wet etching method. The first etching protection layer 91 located outside the fourth to-be-etched region 74 is not removed, that is, the first etching protection layer 91 is arranged on the side of the first sub-pixel 60 away from the driving substrate 100. The first etching protection layer 91 covers the first sub-pixel 60 and the inner wall surface of the isolation structure 40 surrounding the first pixel groove 51, so that the cathode 62 of the first sub-pixel 60 and the conductive part 41 in the isolation structure 40 will not be etched again in the subsequent evaporation process of the sub-pixels 60 of the remaining colors.

[0205] The first sub-pixel 60 is located in the first pixel groove 51.

[0206] It should be understood that when the cathode material layer 620 at the fourth to-be-etched region 74 is etched, the etching liquid for etching the cathode material layer 620 will corrode the side wall of the second pixel groove 52, so that the width of the conductive part 41 in the isolation structure 40 surrounding the second pixel groove 52 is narrowed, so that the overhanging width of the second isolation structure 412 is equal to the overhanging width of the first isolation structure 411, and the extension width of the second isolation structure 412 is equal to the extension width of the first isolation structure 411, thereby improving the consistency of the lap joint of the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0207] The preset fixed value is the etching width of the etching liquid for etching the cathode material layer 620 to the conductive part 41 when the cathode material layer 620 at the fourth to-be-etched region 74 is etched.

[0208] S202: Evaporate a second sub-pixel in the second pixel groove.

[0209] Specifically, the light-emitting layer 61 and the cathode 62 of the second sub-pixel 60 are formed in the second pixel groove 52 by evaporation.

[0210] Please refer to FIG. 2 、 FIG. 25 and 26 , FIG. 25 is FIG. 22 the flowchart of an embodiment of step S202 in FIG. 26 is FIG. 25 the structural diagram corresponding to steps S2021 and S2022 in

[0211] In an embodiment, step S202 specifically comprises:

[0212] S2021: removing the fifth photoresist layer, and sequentially forming the light-emitting material layer and the cathode material layer of the second sub-pixel, and the second etching protection layer on the driving substrate.

[0213] S2022: disposing the sixth photoresist layer on the side of the cathode material layer of the second sub-pixel away from the driving substrate, and determining the fifth etching area; sequentially etching the sixth photoresist layer, the second etching protection layer, the light-emitting material layer and the cathode material layer at the fifth etching area to form the second sub-pixel in the area outside the fifth etching area.

[0214] Steps S2021 to S2022 are similar to steps S2011 to S2012, and refer to the above description, which will not be repeated here.

[0215] It should be noted that the second etching protection layer 92 outside the fifth etching area 75 is not removed, that is, the second etching protection layer 92 is also disposed on the side of the second sub-pixel 60 away from the driving substrate 100.

[0216] The second sub-pixel 60 is located in the second pixel groove 52.

[0217] It should be understood that, since the first etching protection layer 91 is disposed on the side of the first sub-pixel 60 away from the driving substrate 100, when etching the cathode material layer 620 at the fifth etching area 75, the etching liquid for etching the cathode material layer 620 will not corrode the sidewall of the first pixel groove 51 and the cathode 62 of the first sub-pixel 60.

[0218] Please refer to FIG. 3 、 FIG. 27 and FIG. 28 , FIG. 27 is FIG. 20 the flowchart of another embodiment of step S2 in FIG. 28 is FIG. 27 the structural diagram corresponding to steps S201 and S202 in

[0219] In another specific embodiment, the step of vapor depositing the sub-pixel in the pixel slot in step S2, and the step of making the cathode of the sub-pixel overlap with the conductive part, comprises:

[0220] S201: vapor depositing a first sub-pixel in a first pixel slot.

[0221] The specific steps are described above and will not be repeated here.

[0222] It should be understood that when etching the cathode material layer 620 at the fourth etching region 74 to be etched, the etching liquid for etching the cathode material layer 620 will corrode the sidewall of the second pixel slot 52 and the sidewall of the third pixel slot 53, so as to narrow the width of the conductive part 41 in the isolation structure 40 surrounding the second pixel slot 52 by a preset fixed value, and narrow the width of the conductive part 41 in the isolation structure 40 surrounding the third pixel slot 53 by a preset fixed value, so as to equalize the overhanging width of the second isolation structure 412 and the overhanging width of the first isolation structure 411, and equalize the extension width of the second isolation structure 412 and the extension width of the first isolation structure 411, thereby improving the consistency of the overlap between the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0223] The preset fixed value is the etching width of the etching liquid for etching the cathode material layer 620 on the conductive part 41 when etching the cathode material layer 620 at the fourth etching region 74 to be etched.

[0224] S202: vapor depositing a second sub-pixel in a second pixel slot.

[0225] The specific steps are described above and will not be repeated here.

[0226] It should be understood that when etching the cathode material layer 620 at the fifth etching region 75 to be etched, the etching liquid for etching the cathode material layer 620 will corrode the sidewall of the third pixel slot 53, so as to narrow the width of the conductive part 41 in the isolation structure 40 surrounding the third pixel slot 53 by a preset fixed value again, so as to equalize the overhanging width of the third isolation structure 41340 and the overhanging width of the first isolation structure 411, and equalize the extension width of the third isolation structure 41340 and the extension width of the first isolation structure 411, thereby improving the consistency of the overlap between the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0227] The preset fixed value is the etching width of the etching liquid for etching the cathode material layer 620 on the conductive part 41 when etching the cathode material layer 620 at the fifth etching region 75 to be etched.

[0228] That is, due to the evaporation process of the sub-pixel 60, the sidewall of the pixel groove 50 where the sub-pixel 60 is formed later will be etched by the etching liquid of the etching cathode 62 material at least once. By compensating the width of the sidewall of the pixel groove 50 where the sub-pixel 60 is formed later, the etching condition of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50 is matched, so as to ensure that the width of the conductive part 41 of each isolation structure 40 in the final product is the same, and then the lap consistency of the cathode 62 and the conductive part 41 of each sub-pixel 60 is improved, so as to achieve the purpose of improving the lap effect.

[0229] S203: Evaporating a third sub-pixel in a third pixel groove.

[0230] Specifically, the light-emitting layer 61 and the cathode 62 of the third sub-pixel 60 are formed in the third pixel groove 53 by evaporation.

[0231] Please refer to FIG. 3 , FIG. 29 and FIG. 30 , FIG. 29 is FIG. 27 the flowchart of an embodiment of step S203 in FIG. 30 is FIG. 29 the corresponding structural schematic diagram of steps S2031 and S2032 in

[0232] In an embodiment, step S203: evaporating a third sub-pixel in a third pixel groove, comprises:

[0233] S2031: removing the sixth photoresist layer, and forming a light-emitting material layer and a cathode material layer of the third sub-pixel and a third etching protection layer on the driving substrate in sequence.

[0234] Specifically, the sixth photoresist layer 86 is removed, and the light-emitting material layer 610 and the cathode material layer 620 of the third sub-pixel 60 and the third etching protection layer 9390 are formed on the driving substrate 100 in sequence. The third etching protection layer 9390 is used to protect the third sub-pixel 60 from etching when evaporating the sub-pixels 60 of the remaining colors.

[0235] S2032: setting a seventh photoresist layer on the side of the cathode material layer of the third sub-pixel away from the driving substrate, and determining a sixth etching area; etching the seventh photoresist layer, the third etching protection layer, the light-emitting material layer and the cathode material layer of the third sub-pixel in the sixth etching area in sequence to form the third sub-pixel in the area outside the sixth etching area.

[0236] Steps S2031 to S2032 are similar to steps S2021 to S2022, which will not be described here again, please refer to the above description.

[0237] The third sub-pixel 60 is located in the third pixel groove 53. The third sub-pixel 60C is formed by removing the seventh photoresist layer 87.

[0238] It should be noted that the first etching protection layer 91, the second etching protection layer 92 and the third etching protection layer 9390 in the embodiments of the present application are all etching protection layers 90, only the order of preparation is different, and the positions are different, but the functions are the same.

[0239] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0240] The above is only the implementation of the present application, and does not limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation using the content of the present application specification and drawings, or direct or indirect application in other related technical fields, is also included in the patent protection scope of the present application.

Claims

1. A method for driving the production of a substrate, characterized by, The application relates to a display panel and a manufacturing method thereof. The display panel comprises a driving layer, an anode metal layer and a pixel definition layer which are sequentially stacked; An isolation structure is formed on the side of the pixel definition layer away from the driving layer; The isolation structure surrounds a pixel slot; the isolation structure comprises a conductive part and a roof structure which are sequentially stacked; the roof structure extends out of the conductive part in the direction close to the pixel slot; the width of the roof structure beyond the top of the conductive part in the wall thickness direction of the isolation structure is defined as a hanging width, and the width of the roof structure beyond the bottom of the conductive part is defined as an extension width; the pixel slot comprises a first pixel slot and a second pixel slot which are sequentially formed; in the isolation structure surrounding the first pixel slot, the hanging width is defined as a first hanging width, and the extension width is defined as a first extension width; in the isolation structure surrounding the second pixel slot, the hanging width is defined as a second hanging width, and the extension width is defined as a second extension width; the difference between the first hanging width and the second hanging width is a preset fixed value, and the preset fixed value is a positive number; the difference between the first extension width and the second extension width is the preset fixed value. The first pixel slot is used for forming a first sub-pixel; When the first sub-pixel is etched, and the cathode material layer located in the area outside the first sub-pixel is etched, the etching liquid for etching the cathode material layer has an etching width to the conductive part.

2. The production method of a driving substrate according to claim 1, wherein The isolation structure is formed on the side of the pixel definition layer away from the driving layer, comprising: A conductive layer and a roof layer are sequentially formed on the side of the pixel definition layer away from the driving layer; The roof layer and the conductive layer are etched to form a pixel slot; the side wall of the pixel slot forms the isolation structure.

3. The production method of a driving substrate according to claim 2, wherein The roof layer and the conductive layer are etched to form a pixel slot, comprising: A first etching area is determined on the roof layer, and the roof layer and the conductive layer at the first etching area are etched to form a first pixel slot in the pixel slot; wherein the concentration of the etching liquid for etching the conductive layer at the first etching area is a first etching concentration, and the etching reaction time is a first reaction time; A second etching area is determined on the roof layer, and the roof layer and the conductive layer at the second etching area are etched to form a second pixel slot in the pixel slot; wherein the concentration of the etching liquid for etching the conductive layer at the second etching area is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

4. The production method of a driving substrate according to claim 2, wherein The roof layer and the conductive layer are etched to form a pixel slot, comprising: A first etching area is determined on the roof layer, and the roof layer and the conductive layer at the first etching area are etched to form a first pixel slot in the pixel slot; wherein the concentration of the etching liquid for etching the conductive layer at the first etching area is a first etching concentration, and the etching reaction time is a first reaction time; A second to-be-etched region is determined on the eave layer, and the eave layer and the conductive layer at the second to-be-etched region are etched to form a second pixel groove in the pixel grooves; wherein the concentration of the etching liquid for etching the conductive layer at the second to-be-etched region is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time; A third to-be-etched region is determined on the eave layer, and the eave layer and the conductive layer at the third to-be-etched region are etched to form a third pixel groove in the pixel grooves; wherein the concentration of the etching liquid for etching the conductive layer at the third to-be-etched region is a third etching concentration, and the etching reaction time is a third reaction time; the third etching concentration is less than the second etching concentration, and / or the third reaction time is less than the second reaction time.

5. A drive substrate prepared by the method for preparing a drive substrate according to any one of claims 1 to 4; characterized by, The display panel comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are sequentially stacked; the isolation structure is arranged to form a pixel groove; the isolation structure comprises a conductive part and an eave structure which are sequentially stacked; the eave structure extends out of the conductive part in a direction close to the pixel groove; in a wall thickness direction of the isolation structure, the width of the eave structure is equal; wherein, in the wall thickness direction of the isolation structure, the width of the eave structure beyond the top of the conductive part is a overhanging width, and the width of the eave structure beyond the bottom of the conductive part is an extension width; The pixel groove comprises a first pixel groove and a second pixel groove which are sequentially formed; In the isolation structure surrounding the first pixel groove, the overhanging width is defined as a first overhanging width, and the extension width is defined as a first extension width; In the isolation structure surrounding the second pixel groove, the overhanging width is defined as a second overhanging width, and the extension width is defined as a second extension width; The difference between the first overhanging width and the second overhanging width is a preset fixed value, and the preset fixed value is a positive number; The difference between the first extension width and the second extension width is the preset fixed value.

6. The drive substrate according to claim 5, wherein The pixel groove further comprises a third pixel groove, and the second pixel groove and the third pixel groove are sequentially formed; in the isolation structure surrounding the third pixel groove, the overhanging width is defined as a third overhanging width, and the extension width is defined as a third extension width; the difference between the second overhanging width and the third overhanging width is the preset fixed value; the difference between the second extension width and the third extension width is the preset fixed value.

7. The drive substrate according to claim 5, wherein The preset fixed value is less than or equal to 3 microns.

8. The drive substrate according to claim 5, wherein In a direction perpendicular to the pixel definition layer, the thickness of the eave structure is 0.1 microns to 0.3 microns, and the thickness of the conductive part is 0.6 microns to 1.5 microns; The eave structure has conductivity, and the material of the eave structure is different from the material of the conductive part; or the eave structure has insulation.

9. The drive substrate according to claim 5, wherein The anode metal layer comprises a plurality of spaced anodes; the pixel groove is arranged corresponding to the anode and covers the area where the anode is located.

10. A method for manufacturing a display panel, characterized by, Comprising: providing a driving substrate; the driving substrate is the driving substrate of claim 5; forming sub-pixels in the pixel groove by evaporation, and making the cathode of the sub-pixel and the conductive part overlap; the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove; the overhanging width of each isolation structure is equal, and the extension width of each isolation structure is equal; wherein the sub-pixel comprises a first sub-pixel and a second sub-pixel formed in sequence includes: forming the light-emitting material layer and the cathode material layer of the first sub-pixel on the driving substrate by evaporation in sequence; etching to form the first sub-pixel; forming the light-emitting material layer and the cathode material layer of the second sub-pixel on the driving substrate by evaporation in sequence; etching to form the second sub-pixel.

Images