Wafer surface laser processing method and laser processing system

Abstract

The invention provides a method for laser processing of a wafer surface and a laser processing system. The wafer surface laser treatment method comprises the following steps: step A, providing a wafer; step B, scanning the upper surface of the wafer by using a scanner to obtain morphology height distribution of the upper surface of the wafer; and C, according to the morphology high-low distribution of the upper surface of the wafer, laser processing of energy density integral distribution is carried out on the wafer through the upper surface of the wafer, so that the wafer after laser processing is formed, and the energy density integral distribution is related to the morphology high-low distribution of the upper surface of the wafer. According to the invention, laser modification can be enhanced aiming at a place where the morphology height distribution of the wafer is relatively high, and laser modification can be weakened aiming at a place where the morphology height distribution of the wafer is relatively low, so that grinding treatment which is time-consuming, labor-consuming and consumes grinding consumables is improved, and meanwhile, the overall loss rate of the wafer can be reduced.

Description

Technical Field

[0001] The present invention relates to a method and system for laser processing a wafer surface, and more particularly to a system and method for laser processing a wafer surface for laser processing with energy density integral distribution based on the topographic height distribution obtained by scanning the upper surface of the wafer. Background Art

[0002] See also Fig.18A , which is a cross-sectional schematic diagram of the topographic distribution of the upper surface of a silicon carbide (SiC) wafer that has not been lapped after being cut in the prior art. In the prior art, when a silicon carbide crystal column is cut into a silicon carbide wafer 9, since silicon carbide is a very hard material, the cut surface (for example, the upper surface) of the silicon carbide wafer 9 is usually very uneven (for example, Fig.18A The upper surface 90 of the silicon carbide wafer 9 is shown in FIG. 1 ). The bottom of the silicon carbide wafer 9 is not actually Fig.18A The flat surface shown in FIG. 1 is usually also very uneven. Before being polished after cutting, the top surface 90 of the silicon carbide wafer 9 has some areas with high morphology distribution (for example, Fig.18A 95), some areas have very low morphological distribution (e.g. Fig.18A area 96). Therefore, the prior art usually requires lapping the upper surface 90 of the silicon carbide wafer 9 first. Lapping is a process of roughly grinding and flattening the upper surface 90 of the cut silicon carbide wafer 9. Since the upper surface 90 of the cut silicon carbide wafer 9 is very uneven and silicon carbide is very hard, after the lapping, the upper surface 90 of the silicon carbide wafer 9 needs to be polished more finely to make the upper surface 90 of the silicon carbide wafer 9 finely ground and polished for use in the wafer processing plant. However, since silicon carbide is very hard, the prior art usually takes a lot of time and a lot of grinding consumables when lapping the upper surface 90 of the silicon carbide wafer 9, which are huge costs. For example, it usually takes dozens of hours to lap the upper surface 90 of a cut silicon carbide wafer 9. Therefore, in addition to the high time cost, the production capacity of each lapping machine is also severely limited. The longer it takes, the higher the amount of grinding consumables used.

[0003] In addition, in the prior art, after the silicon carbide crystal column is cut into silicon carbide wafers, before the lapping process, the upper surface of the silicon carbide wafer is firstly subjected to comprehensive and uniform scanning processing by laser, so that the silicon carbide wafer adjacent to the upper surface of the silicon carbide wafer is modified and becomes less hard, and the modified portion of the silicon carbide wafer adjacent to the upper surface of the silicon carbide wafer forms a modified layer. Fig.18B , which is Fig.18A Schematic diagram of the cross-section of the upper surface of the silicon carbide wafer after a relatively shallow degree of laser modification. Fig.18A After the upper surface 90 of the silicon carbide wafer 9 is lightly laser-modified, the modified portion of the silicon carbide wafer 9 adjacent to the upper surface 90 of the silicon carbide wafer 9 forms a modified layer 91 (eg, Fig.18B As shown). In the process of modifying the silicon carbide wafer adjacent to the upper surface of the silicon carbide wafer by laser processing in the prior art, the height of the morphology distribution of the upper surface 90 of the silicon carbide wafer 9 is not taken into account. Therefore, the thickness of the modified layer 91 is approximately the same regardless of the area 95 with a high morphology distribution or the area 96 with a low morphology distribution. When the lapping process is initially performed, only the modified layer 91 near the area 95 with a high morphology distribution is lapped (other parts are not lapped because they are relatively low). And because the modified layer 91 is not as hard as the silicon carbide wafer 9, lapping the portion of the modified layer 91 is less time-consuming and labor-intensive than lapping the portion of the very hard silicon carbide wafer 9 (which has not been modified). Please also refer to Fig.18C , which is Fig.18B Schematic diagram of the cross section of the upper surface of the silicon carbide wafer after a short period of lapping (but not yet complete lapping). However, after a short period of lapping, the modified layer 91 near the area 95 is removed by the lapping, so that the unmodified silicon carbide wafer 9 near the area 95 is exposed from the lapping surface 92 (as shown in FIG. Fig.18C As shown). If the lapping process is continued, the unmodified silicon carbide wafer 9 will be lapping to be exposed from the lapping surface 92. The lapping process must be carried out at least until the modified layer 91 near the area 96 with a very low morphology distribution is removed by lapping, and the unmodified silicon carbide wafer 9 near the area 96 is exposed. During this lapping process (starting from the exposure of the unmodified silicon carbide wafer 9 near the area 95 from the lapping surface 92 to the exposure of the unmodified silicon carbide wafer 9 near the area 96), many unmodified parts of the silicon carbide wafer 9 (for example, the unmodified parts of the silicon carbide wafer 9 on the left and right sides of the area 96) will be lapping, so this lapping process is also very time-consuming and labor-intensive, and consumes a lot of grinding consumables.

[0004] See also Fig.18D , which is Fig.18A Schematic diagram of the cross section of the upper surface of the silicon carbide wafer after a deeper laser modification. When the conventional technology uses a laser to perform a comprehensive and uniform scanning process on the upper surface 90 of the silicon carbide wafer 9, if the laser processing is performed at a higher laser energy density, a thicker modified layer 93 (such as Fig.18D As shown in the modified layer 93, Fig.18D The thickness of the modified layer 93 is greater than Fig.18B The thickness of the modified layer 91 in the topography distribution is the same as the thickness of the modified layer 93 in the topography distribution area 95 or the topography distribution area 96. When the lapping process is first performed, only the modified layer 93 near the topography distribution area 95 will be lapped (other parts will not be lapped because they are relatively low). Then, the modified layer 93 near the left side of the area 96 will also begin to be lapped, while the modified layer 93 near the area 96 will not be lapped because it is relatively low. Since the modified layer 93 is not as hard as the silicon carbide wafer 9, lapping the modified layer 93 is less time-consuming and labor-intensive than lapping the very hard silicon carbide wafer 9 (unmodified) part. Please also refer to Fig.18E , which is Fig.18D Schematic diagram of the cross section of the upper surface of the silicon carbide wafer after a short period of lapping (but not yet complete lapping). However, after a short period of lapping, the modified layer 93 near the area 95 and the modified layer 93 near the left side of the area 96 are removed by lapping, so that the unmodified silicon carbide wafer 9 near the area 95 and the unmodified silicon carbide wafer 9 near the left side of the area 96 are exposed from the lapping surface 94 (as shown in FIG. Fig.18E As shown). If the lapping process is continued, the unmodified silicon carbide wafer 9 will be lapping to be exposed from the lapping surface 94. The lapping process should be carried out at least until the modified layer 93 near the area 96 with very low morphology distribution is removed by lapping, and the unmodified silicon carbide wafer 9 near the area 96 is exposed. During this lapping process (starting from the exposure of the unmodified silicon carbide wafer 9 near the area 95 from the lapping surface 94 to the exposure of the unmodified silicon carbide wafer 9 near the area 96), some unmodified parts of the silicon carbide wafer 9 will be lapping.

[0005] Compare Fig.18B and Fig.18C The examples in Fig.18D and Fig.18E The embodiments described above are related to the time-consuming and labor-intensive lapping process and the overall wear rate of the silicon carbide wafer 9. Fig.18B and Fig.18C The modified layer 91 of the embodiment is relatively thin. From the exposure of the unmodified silicon carbide wafer 9 near the region 95 by the self-polishing polishing surface 92, until the exposure of the unmodified silicon carbide wafer 9 near the region 96, the portion of the unmodified silicon carbide wafer 9 that is polished is relatively thick. Fig.18B and Fig.18C The overall loss rate of the silicon carbide wafer 9 in the embodiment is low, however Fig.18B and Fig.18C The polishing process of the embodiment in the embodiment is time-consuming and labor-intensive. Fig.18D and Fig.18E The modified layer 93 of the embodiment is thinner, and the unmodified silicon carbide wafer 9 is exposed from the polishing surface 94 near the region 95 until the unmodified silicon carbide wafer 9 is exposed near the region 96. The unmodified silicon carbide wafer 9 that is polished is thinner, so Fig.18D and Fig.18E The lapping process of the embodiment in the embodiment is less time-consuming and labor-intensive, however Fig.18D and Fig.18E The overall loss rate of the silicon carbide wafer 9 in the embodiment is high. Therefore, Fig.18B and Fig.18C The lapping process in the embodiment is more time-consuming and labor-intensive, and consumes more grinding consumables; Fig.18D and Fig.18E The proportion of silicon carbide wafer 9 consumed in the embodiment becomes higher, that is, when the silicon carbide crystal column is cut into silicon carbide wafers 9, it must be cut into thicker silicon carbide wafers 9. As a result, the number of silicon carbide wafers 9 that can be cut from the silicon carbide crystal column is reduced, and the cost is naturally greatly increased. Summary of the invention

[0006] The purpose of the present disclosure is to provide a wafer surface laser processing method that can enhance laser modification at locations where the wafer has a higher distribution of morphology heights and weaknesses, and weaken laser modification at locations where the wafer has a lower distribution of morphology heights and weaknesses, thereby improving the time-consuming, labor-intensive, and grinding material-consuming lapping process, and at the same time reducing the overall wafer loss rate.

[0007] Additional aspects and advantages of the disclosure will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosure.

[0008] According to one aspect of the present disclosure, a method for laser processing of a wafer surface is provided, comprising the following steps: step A: providing a wafer; step B: using a scanner to scan the topography height distribution of the upper surface of the wafer to obtain the topography height distribution of the upper surface of the wafer; and step C: based on the topography height distribution, laser processing the wafer with an energy density integral distribution is performed from the upper surface of the wafer to form a laser processed wafer, wherein the energy density integral distribution is related to the topography height distribution.

[0009] The present invention further provides a wafer surface laser processing system, including a driving device, a scanner, a laser and a carrying device. The carrying device is arranged on the driving device. The carrying device is used to carry the wafer. With the help of the driving device, at least one of the relative displacement and relative rotation between the scanner and the wafer is made, and the upper surface of the wafer is scanned for the topography height distribution with the help of the scanner to obtain the topography height distribution of the surface of the wafer. Then, with the help of the driving device, at least one of the relative displacement and relative rotation between the laser and the wafer is made, and with the help of the laser, the wafer is laser processed with the energy density integral distribution from the upper surface of the wafer according to the topography height distribution to form a wafer after laser processing. The energy density integral distribution is related to the topography height distribution.

[0010] In an exemplary embodiment of the present disclosure, the relationship between the energy density integral distribution and the morphology height distribution includes one selected from the following group:

[0011] (1) The higher the morphology height distribution, the higher the energy density integral distribution;

[0012] (2) The morphology height distribution has a maximum value and a minimum value. The difference between the maximum value and the minimum value is the height range of the morphology height distribution. The difference between the morphology height distribution and the minimum value is the normalized morphology height distribution. The ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, where the energy density integral distribution is approximately proportional to the morphology normalized proportion distribution.

[0013] (3) For a morphology with a height distribution less than or equal to a minimum height threshold, its energy density integral distribution is approximately the minimum energy density integral threshold, where the minimum energy density integral threshold is greater than or equal to zero;

[0014] (4) When the topography height distribution is less than or equal to a minimum height threshold, its energy density integral distribution is approximately equal to the minimum energy density integral threshold, wherein the minimum energy density integral threshold is greater than or equal to zero; when the topography height distribution is greater than the minimum height threshold, the topography with a higher topography height distribution has an energy density integral distribution that is approximately higher;

[0015] (5) For those with a higher morphology height distribution, the energy density integral distribution is slightly lower;

[0016] (6) The morphology height distribution has a maximum value and a minimum value. The difference between the maximum value and the minimum value is the height range of the morphology height distribution. The difference between the morphology height distribution and the minimum value is the normalized morphology height distribution. The ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, where the energy density integral distribution is approximately inversely proportional to the morphology normalized proportion distribution.

[0017] In an exemplary embodiment of the present disclosure, the driving device includes a scanning driving device and a processing driving device. The carrying device includes a scanning wafer carrier disposed on the scanning driving device and a processing wafer carrier disposed on the processing driving device. The scanning driving device is used to cause at least one of relative displacement and relative rotation between the scanner and the wafer carried by the scanning wafer carrier; and the processing driving device is used to cause at least one of relative displacement and relative rotation between the laser and the wafer carried by the processing wafer carrier.

[0018] In an exemplary embodiment of the present disclosure, a wafer surface laser processing method controls the energy density integral distribution by controlling at least one of the energy density of the laser and the integral distribution of the laser pulse.

[0019] In an exemplary embodiment of the present disclosure, the energy density of the laser is greater than a minimum energy density threshold.

[0020] In an exemplary embodiment of the present disclosure, the minimum energy density threshold is related to the wavelength of the laser and the material constituting the wafer.

[0021] In an exemplary embodiment of the present disclosure, a wafer surface laser processing method controls energy density by at least one of selecting a laser pulse repetition rate, controlling laser power, and adjusting a laser spot area.

[0022] In an exemplary embodiment of the present disclosure, a wafer surface laser processing method controls the integrated distribution of laser pulses by controlling at least one of the overlap rate in the processing path direction and the overlap rate in the processing path interval direction of a plurality of laser pulses generated by the laser.

[0023] In an exemplary embodiment of the present disclosure, the wafer surface laser processing system further includes a coating device, which includes a coated wafer carrier. The coating device is used to carry the wafer on the coated wafer carrier and coat an auxiliary modified layer on the upper surface of the wafer before the laser is used to process the wafer.

[0024] In an exemplary embodiment of the present disclosure, before step C of the wafer surface laser processing method, the wafer surface laser processing method further includes the following steps: coating an auxiliary modified layer on the upper surface of the wafer.

[0025] In an exemplary embodiment of the present disclosure, the material constituting the auxiliary modified layer includes at least one selected from the following group:

[0026] (1) a mixture of a solution containing metal ions, an oxidant and a buffer solution;

[0027] (2) containing alkaline solutions or colloids;

[0028] (3) At least one of a sol-gel containing a metal and a sol-gel containing the metal oxide.

[0029] In an exemplary embodiment of the present disclosure, the material constituting the auxiliary modified layer is a mixed solution of a solution containing metal ions, an oxidant, and a buffer solution;

[0030] The material constituting the solution containing metal ions includes at least one selected from the following groups: Ag 3+ Ion solution and Cu 2+ The ionic solution is composed of hydrogen peroxide as the oxidant and glacial acetic acid as the buffer.

[0031] In an exemplary embodiment of the present disclosure, the material constituting the auxiliary modified layer is an alkaline solution or colloid;

[0032] The material constituting the alkaline solution or colloid includes at least one selected from the following group: potassium hydroxide and ammonia water.

[0033] In an exemplary embodiment of the present disclosure, the material constituting the auxiliary modified layer is at least one of a sol-gel containing a metal and a sol-gel containing an oxide of the metal;

[0034] The material constituting the metal includes at least one selected from the following group: aluminum, boron, gallium and indium; the material constituting the metal oxide includes at least one selected from the following group: aluminum oxide, boron oxide, gallium oxide and indium oxide.

[0035] In an exemplary embodiment of the present disclosure, after step C of the wafer surface laser processing method, the wafer surface laser processing method further includes the following steps: polishing the upper surface of the wafer after laser processing.

[0036] In an exemplary embodiment of the present disclosure, in step C of the wafer surface laser processing method, at least a portion of the wafer adjacent to the upper surface of the wafer is removed.

[0037] In an exemplary embodiment of the present disclosure, at least a portion of the wafer that is removed has a higher profile of high and low profiles, so that the wafer is at least partially planarized.

[0038] In an exemplary embodiment of the present disclosure, in step C of the wafer surface laser processing method, a portion of the wafer adjacent to the upper surface of the wafer is removed to planarize the entire wafer.

[0039] In an exemplary embodiment of the present disclosure, the laser includes at least one selected from the following group: a diode-pumped solid-state laser, a gas laser, a semiconductor laser, and a fiber laser.

[0040] In an exemplary embodiment of the present disclosure, the material constituting the wafer includes at least one selected from the following group: silicon carbide, gallium oxide, sapphire, indium phosphide, gallium arsenide, diamond, gallium nitride, gallium phosphide, quartz, silicon, aluminum nitride, indium arsenide, silicon germanium, germanium, ceramic substrate

[0041] In an exemplary embodiment of the present disclosure, the scanner includes one selected from the following group: a line scanner, an area scanner, a height sensor, a distance sensor, and a 3D scanner.

[0042] The laser processing method and laser processing system disclosed in the present invention have the following beneficial effects:

[0043] The wafer surface laser processing method includes the following steps: step A: providing a wafer; step B: scanning the upper surface of the wafer with a scanner to obtain the topographic height distribution of the upper surface of the wafer; and step C: according to the topographic height distribution of the upper surface of the wafer, the laser performs laser processing of the wafer with energy density integral distribution from the upper surface of the wafer to form a laser processed wafer, wherein the energy density integral distribution is related to the topographic height distribution of the upper surface of the wafer. The laser modification can be enhanced for the places where the topographic height distribution of the wafer is higher, and the laser modification can be weakened for the places where the topographic height distribution of the wafer is lower, thereby improving the time-consuming, labor-intensive and grinding material-consuming lapping process, and at the same time reducing the overall loss rate of the wafer.

[0044] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0046] Figure 1 It is a three-dimensional schematic diagram of a specific embodiment of a wafer surface laser processing system of the present invention.

[0047] Figure 2 yes Figure 1 Schematic cross-sectional view of the topography scanning state of the wafer surface laser processing system.

[0048] Figure 3 for Figure 1 A schematic diagram of a specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0049] Figure 4 for Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0050] Figure 5 for Figure 1 Schematic cross-sectional view of the laser processing state of the wafer surface laser processing system.

[0051] Fig. 6A for Figure 1 A schematic diagram of a specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0052] Figure 6B for Fig. 6A The schematic cross-sectional view of the wafer along the A-A' section line is a schematic cross-sectional view of the top surface of the wafer obtained by scanning the top surface of the wafer with a scanner before laser processing.

[0053] Fig. 7A for Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0054] Figure 7B for Fig. 7A The schematic cross-sectional view of the wafer along the BB' section line is a schematic cross-sectional view of the top surface of the wafer obtained by scanning the top surface of the wafer with a scanner before laser processing.

[0055] Fig. 8A for Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0056] Figure 8B for Fig. 8A A schematic cross-sectional diagram of the topographical distribution obtained by scanning the upper surface of the wafer with a scanner before laser processing along the C-C' section line.

[0057] Fig.9A for Figure 1 A schematic diagram of yet another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0058] Fig. 9B for Fig.9A The schematic cross-sectional view of the topographical distribution obtained after scanning the upper surface of the wafer with a scanner before laser processing along the D-D' section line is shown.

[0059] Fig. 10A for Figure 1A schematic diagram of a specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0060] Fig. 10B for Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0061] Fig. 10C for Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0062] Fig.11 for Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system.

[0063] Fig. 12A for Figure 1 A schematic diagram of a specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0064] Fig. 12B for Figure 1 Schematic diagram of a specific embodiment of laser pulse integral distribution for laser processing in a wafer surface laser processing system

[0065] Fig.13 It is a cross-sectional schematic diagram of another specific embodiment of a wafer surface laser processing system of the present invention.

[0066] Fig.14 It is a three-dimensional schematic diagram of a coating device of a wafer surface laser processing system of the present invention.

[0067] Fig.15A for Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0068] Fig. 15B for Fig.15A The schematic cross-sectional view of the wafer along the E-E' section line is a schematic cross-sectional view of the top surface of the wafer obtained by scanning the top surface of the wafer with a scanner before laser processing.

[0069] Fig.16A The cross-sectional schematic diagram is a diagram of the topographic height distribution obtained after scanning the upper surface of a silicon carbide wafer that has not been subjected to a lapping treatment after cutting using a wafer surface laser processing method of the present invention.

[0070] Fig. 16B for Fig.16AThe cross-sectional schematic diagram of the silicon carbide wafer after the silicon carbide wafer is laser processed by a wafer surface laser processing method of the present invention.

[0071] Fig. 16C for Fig.16A A schematic cross-sectional view of a silicon carbide wafer that is locally flattened after being laser processed by a wafer surface laser processing method according to the present invention.

[0072] Fig.16D for Fig.16A The cross-sectional schematic diagram of the silicon carbide wafer in the figure is a schematic diagram of the silicon carbide wafer which is fully flattened after being laser processed by a wafer surface laser processing method of the present invention.

[0073] Fig.17 for Figure 1 A schematic diagram of another specific embodiment d of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system.

[0074] Fig.18A The cross-sectional schematic diagram is a diagram showing the topographic distribution of the upper surface of a silicon carbide wafer after cutting and before being polished according to the prior art.

[0075] Fig.18B for Fig.18A Schematic diagram of the cross-section of the upper surface of the silicon carbide wafer after a relatively shallow degree of laser modification.

[0076] Fig.18C for Fig.18B Schematic diagram of the cross section of the upper surface of the silicon carbide wafer after a short period of lapping (but not yet a complete lapping).

[0077] Fig.18D for Fig.18A Schematic diagram of the cross-section of the upper surface of the silicon carbide wafer after deep laser modification.

[0078] Fig.18E for Fig.18D Schematic diagram of the cross section of the upper surface of the silicon carbide wafer after a short period of lapping (but not yet a complete lapping).

[0079] The main markings in the figure are explained as follows:

[0080] 1. Wafer surface laser processing system;

[0081] 2. Driving device; 20. Scanning driving device; 21. Processing driving device;

[0082] 3. Scanner;

[0083] 4. Laser;

[0084] 5. Carrying device; 50. Scanning wafer carrier; 51. Processing wafer carrier;

[0085] 6. wafer; 60. upper surface of wafer; 61, 62, 63, 64, 65, 66, 67, 68. region; 69. modified layer;

[0086] 7. coating device; 70. auxiliary modified material; 71. rotating table; 72. nozzle; 73. coating wafer carrier; 74, 75, 76, 77, 78. area;

[0087] 81,82,83,84,85,area;

[0088] 9. Silicon carbide wafer; 90. Upper surface of silicon carbide wafer; 91, 93. Modified layer; 92, 94. Polished surface; 95, 96. Region;

[0089] The highest value of pH and morphological high and low distribution;

[0090] PL, the lowest value of the high and low distribution of morphology;

[0091] PR, the high and low range of the morphological distribution;

[0092] R1, first laser pulse;

[0093] S1, the first rectangle;

[0094] S2, the second rectangle;

[0095] SL, scan length;

[0096] SW, sweep width;

[0097] T1, the first rectangle;

[0098] T2, the second rectangle;

[0099] T3, the third rectangle;

[0100] TL, minimum height threshold. DETAILED DESCRIPTION

[0101] The embodiment of the present disclosure provides a wafer surface laser processing system 1, including a driving device 2, a scanner 3, a laser 4 and a carrying device 5. The carrying device 5 is arranged on the driving device 2. The carrying device 5 is used to carry a wafer 6. The material constituting the wafer 6 includes at least one selected from the following groups: silicon carbide (SiC), gallium oxide (Ga2O3), sapphire (Sapphire), indium phosphide (InP), gallium arsenide (GaAs), diamond, gallium nitride (GaN), gallium phosphide (GaP), quartz, silicon, aluminum nitride (AlN), indium arsenide (InAs), silicon germanium (SiGe), germanium, and a ceramic substrate. In this embodiment, the driving device 2 is an X, Y, and Z three-axis moving platform (where the directions of X, Y, and Z are as shown in the figure). Figure 1 ). The driving device 2 enables the wafer 6 carried by the carrying device 5 to move along the three axes of X, Y, and Z. With the help of the driving device 2, relative displacement in the directions of X, Y, and Z axes can be generated between the wafer 6 and the scanner 3; and relative displacement in the directions of X, Y, and Z axes can also be generated between the wafer 6 and the laser 4 with the help of the driving device 2. The scanner 3 includes at least one selected from the following groups: a line scanner, a surface scanner, a height sensor, a distance sensor, and a 3D scanner. The scanner 3 is combined with the driving device 2 to generate relative displacement in the directions of X, Y, and Z axes between the wafer 6 and the scanner 3, so that the scanner 3 can scan the topography height distribution of the upper surface 60 of the wafer 6 along the scanning path to obtain the topography height distribution of the upper surface 60 of the wafer 6, wherein the topography height distribution of the upper surface 60 of the wafer 6 refers to the distribution of the height fluctuations of the upper surface 60 of the wafer 6. The laser 4 includes at least one selected from the following groups: a diode pumped solid state laser, a gas laser, a semiconductor laser, and a fiber laser. The laser 4 is based on the topographical distribution of the upper surface 60 of the wafer 6, and cooperates with the driving device 2 to generate relative displacement between the wafer 6 and the laser 4 in the X, Y, and Z axis directions, and the laser 4 performs laser processing of the wafer 6 with an energy density integral distribution from the upper surface 60 of the wafer 6 to form a laser processed wafer, wherein the energy density integral distribution of the laser processing performed by the laser 4 is related to the topographical distribution of the upper surface 60 of the wafer 6.

[0102] In addition, the present invention further provides a wafer surface laser processing method, comprising the following steps: step A: providing a wafer 6, so that a carrying device 5 disposed on a driving device 2 carries the wafer 6; step B: scanning the upper surface 60 of the wafer 6 with a scanner 3 for a topographic height distribution, so as to obtain the topographic height distribution of the upper surface 60 of the wafer 6; and step C: performing laser processing of the wafer 6 with an energy density integral distribution from the upper surface 60 of the wafer 6 with a laser 4 according to the topographic height distribution of the upper surface 60 of the wafer 6, so as to form a laser processed wafer, wherein the energy density integral distribution of the laser processing performed by the laser 4 is related to the topographic height distribution of the upper surface 60 of the wafer 6. The wafer surface laser processing method of the present invention can select the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 according to different conditions and different requirements.The relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 can be selected from at least the following six relationships: (the first one): where the topography height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 received thereon is approximately higher; (the second one): the topography height distribution of the upper surface 60 of the wafer 6 has a maximum value and a minimum value, and the difference between the maximum value and the minimum value of the topography height distribution of the upper surface 60 of the wafer 6 is the height range of the topography height distribution of the upper surface 60 of the wafer 6, and the difference between the maximum value and the minimum value of the topography height distribution of the upper surface 60 of the wafer 6 is the height range of the topography height distribution of the upper surface 60 of the wafer 6 0 normalized morphology height distribution, the ratio of the normalized morphology height distribution of the upper surface 60 of the wafer 6 to the height range of the morphology height distribution of the upper surface 60 of the wafer 6 is the morphology normalized proportion distribution of the upper surface 60 of the wafer 6, wherein the energy density integral distribution of the laser processing performed by the laser 4 is approximately proportional to the morphology normalized proportion distribution of the upper surface 60 of the wafer 6, (third type): where the morphology height distribution of the upper surface 60 of the wafer 6 is less than or equal to a minimum height threshold, the energy density integral distribution of the laser processing performed by the laser 4 is approximately the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero, (fourth type): on the upper surface of the wafer 6 Where the height distribution of the topography of the surface 60 is less than or equal to the minimum height threshold, the energy density integral distribution of the laser processing performed by the laser 4 is approximately the minimum energy density integral threshold, wherein the minimum energy density integral threshold is greater than or equal to zero; and where the topography height distribution of the upper surface 60 of the wafer 6 is greater than the minimum height threshold, if the topography height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is approximately higher, (fifth type): where the topography height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is approximately lower, and (sixth type) : The morphology height distribution of the upper surface 60 of the wafer 6 has a maximum value and a minimum value, the difference between the maximum value and the minimum value of the morphology height distribution of the upper surface 60 of the wafer 6 is the height range of the morphology height distribution of the upper surface 60 of the wafer 6, the difference between the morphology height distribution and the minimum value of the upper surface 60 of the wafer 6 is the normalized morphology height distribution of the upper surface 60 of the wafer 6, the ratio of the normalized morphology height distribution of the upper surface 60 of the wafer 6 to the height range of the morphology height distribution of the upper surface 60 of the wafer 6 is the normalized proportion distribution of the morphology of the upper surface 60 of the wafer 6, wherein the integral distribution of energy density of laser processing performed by the laser 4 is approximately inversely proportional to the normalized proportion distribution of the morphology of the upper surface 60 of the wafer 6.

[0103] Step C of the wafer surface laser processing method of the present invention is to perform laser processing of the wafer 6 with an energy density integral distribution from the upper surface 60 of the wafer 6 using a laser 4 based on the height distribution of the morphology of the upper surface 60 of the wafer 6 to form a laser processed wafer, wherein the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the height distribution of the morphology of the upper surface 60 of the wafer 6 is not limited to the above six types. As long as the energy density integral distribution of the laser processing performed by the laser 4 is related to the height distribution of the morphology of the upper surface 60 of the wafer 6, the energy density integral distribution of the laser processing performed by the laser 4 can be based on the height distribution of the morphology of the upper surface 60 of the wafer 6.

[0104] See also Figure 2 , which is Figure 1 A cross-sectional schematic diagram of the morphology scanning state of the wafer surface laser processing system in FIG. 1 . In this embodiment, the scanner 3 is a line scanner. The wafer 6 carried by the carrying device 5 is moved along the X- and Y-axis directions with the help of the driving device 2, so that the wafer 6 is moved to the bottom of the scanner 3, and the wafer 6 carried by the carrying device 5 is moved along the Z-axis direction with the help of the driving device 2, so that the wafer 6 is moved to the height required for scanning by the scanner 3, and then the wafer 6 carried by the carrying device 5 is moved along the X- and Y-axis directions with the help of the driving device 2, so that the scanner 3 can perform a morphology (contour) height distribution scan on the upper surface 60 of the wafer 6 along a scanning path to obtain the morphology height distribution of the upper surface 60 of the wafer 6. Please also refer to Figure 3 , which is Figure 1 Schematic diagram of a specific embodiment of the scanning path of the wafer surface laser processing system for scanning the topography height distribution. In this embodiment, each time the scanner 3 (line scanner) performs a single topography (contour) height distribution scan, its scanning range is a rectangle of scanning length sL×scanning width SW (generally speaking, the scanning length SL of the line scanner is much larger than the scanning width SW). Figure 3 The scanning path in is applicable when the scanning length SL of the scanner 3 (line scanner) is smaller than the diameter of the wafer 6. Figure 3, multiple identical rectangles are displayed. The length of each rectangle is equal to the scanning length SL of the scanner 3 (line scanner), and the width of each rectangle is equal to the scanning width SW of the scanner 3 (line scanner). The wafer 6 carried by the carrier 5 is moved along the Z-axis direction with the aid of the driving device 2, so that the wafer 6 is moved to the height required for the scanner 3 to scan, and the wafer 6 carried by the carrier 5 is moved along the X-axis and Y-axis directions with the aid of the driving device 2, so that the geometric center of the first rectangle S1 is moved to the position directly below the scanning center of the scanner 3, so that the scanning range of the scanner 3 overlaps with the first rectangle S1, and the scanner 3 performs the first topography (contour) height distribution scan (single topography scan); then, the wafer 6 is moved along the X-axis and Y-axis directions with the aid of the driving device 2, so that the geometric center of the second rectangle S2 is moved to the position below the scanning center of the scanner 3, so that the scanning range of the scanner 3 overlaps with the second rectangle S2, and the scanner 3 performs the second topography height distribution scan (single topography scan). And so on, along the Figure 3 In the direction of the middle arrow, the scanner 3 is sequentially overlapped with each rectangle one by one, and a single topographic height distribution scan is performed one by one. After the scanner 3 completely scans the upper surface 60 of the wafer 6, the scanning result is integrated into the topographic height distribution of the upper surface 60 of the wafer 6.

[0105] See also Figure 4 , which is Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system. Figure 4 The scanning path in FIG. 1 is also applicable when the scanning length SL of the scanner 3 (line scanner) is smaller than the diameter of the wafer 6. Figure 4 As shown by the arrows in , the scanning path starts from the upper left to the lower left, and the scanner 3 is sequentially overlapped with each rectangle one by one to scan the height distribution of the morphology (contour) one by one; then, starting from the lower middle to the upper middle, the scanner 3 is sequentially overlapped with each rectangle one by one to scan the height distribution of the morphology (contour) one by one; then, starting from the upper right to the lower right, the scanner 3 is sequentially overlapped with each rectangle one by one to scan the height distribution of the morphology (contour) one by one. After the scanner 3 completely scans the upper surface 60 of the wafer 6, the scanning results are integrated into the height distribution of the upper surface 60 of the wafer 6.

[0106] See also Figure 5 , which is Figure 1A cross-sectional schematic diagram of the laser processing state of the wafer surface laser processing system in FIG. After the scanner 3 completely scans the upper surface 60 of the wafer 6, the topographic height distribution of the upper surface 60 of the wafer 6 is obtained. At this time, the wafer 6 carried by the carrying device 5 is moved along the X and Y axis directions with the help of the driving device 2, so that the wafer 6 is moved to the bottom of the laser 4, and the wafer 6 carried by the carrying device 5 is moved along the Z axis direction with the help of the driving device 2, so that the wafer 6 is moved to the height required for the laser 4 processing, and then the laser 4 performs a laser processing of the wafer 6 with an energy density integral distribution from the upper surface 60 of the wafer 6 according to the topographic height distribution of the upper surface 60 of the wafer 6, so as to form a wafer after laser processing; wherein the energy density integral distribution of the laser processing performed by the laser 4 is based on the topographic height distribution of the upper surface 60 of the wafer 6, that is, the energy density integral distribution of the laser processing performed by the laser 4 is related to the topographic height distribution of the upper surface 60 of the wafer 6. According to different conditions and different needs, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 can be selected from at least the above six relationships. The laser 4 performs laser processing of the wafer 6 with energy density integral distribution from the upper surface 60 of the wafer 6. The laser 4 can be controlled by many parameters during processing to achieve laser processing with energy density integral distribution. One of the control parameters is the energy density F (Fluence) of the laser 4. Here, the energy density F of the laser 4 is defined as the energy per unit spot area of ​​a single laser pulse of the laser 4 at its focus, where:

[0107]

[0108] Where P is the power of the laser 4; A is the spot area of ​​the pulse of the laser 4 at its focus; f (unit: Hz) is the pulse repetition rate of the laser 4. The energy density F of the laser 4 can be controlled by controlling the power P of the laser 4, the spot area A of the pulse of the laser 4 at its focus, and the pulse repetition rate f of the laser 4. The unit of the energy density F can be, for example, joule / cm 2 (J / cm 2). The energy density integral distribution of the laser processing performed by the laser 4 is defined as the laser pulse integral distribution of the laser pulses that the laser 4 hits on the wafer 6 from the upper surface 60 of the wafer 6 after the laser 4 completes the laser processing of the wafer 6 from the upper surface 60 of the wafer 6 × the energy density F of the laser 4; that is, the energy density integral distribution = laser pulse integral distribution × energy density F. When performing laser processing, the energy density F of the laser 4 must be greater than the minimum energy density threshold value, so that the laser 4 can effectively perform laser processing on the wafer 6 from the upper surface 60 of the wafer 6, so that the wafer 6 in the area processed by the laser 4 is modified and becomes softer in hardness. When the energy density F of laser 4 is lower than the minimum energy density threshold, laser 4 cannot perform effective laser processing on wafer 6 (i.e., the wafer 6 in the area processed by laser 4 cannot be modified); and the minimum energy density threshold is not only related to the power P of laser 4, the spot area A of the pulse of laser 4 at its focus, and the pulse repetition rate f of laser 4, but is also affected by at least the wavelength of laser 4 and the material constituting wafer 6.

[0109] In some embodiments, the wafer surface laser processing method of the present invention further includes the following steps after step C: polishing the upper surface of the laser processed wafer, wherein the laser processed wafer is formed after the laser processing in step C.

[0110] See also Fig. 6A , which is Figure 1 Schematic diagram of a specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system. Please also refer to Figure 6B , which is Fig. 6A Before laser processing, the top surface of the wafer is scanned by a scanner. The topographic distribution is along the Fig. 6A In this embodiment, a wafer surface laser processing method of the present invention comprises the following steps: Step A: providing a wafer 6, and allowing a carrying device 5 disposed on a driving device 2 to carry the wafer 6; Step B: using a scanner 3 to perform a topographic height distribution scan on the upper surface 60 of the wafer 6 to obtain the topographic height distribution of the upper surface 60 of the wafer 6 (the scanner 3 can completely scan the upper surface 60 of the wafer 6 to obtain the complete topographic height distribution of the upper surface 60 of the wafer 6; wherein Figure 6B Only the top surface 60 of the wafer 6 is shown along the Fig. 6A); and step C: according to the topographic height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing on the upper surface 60 of the wafer 6 with an energy density integral distribution to form a laser processed wafer. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 is selected as the first of the six aforementioned relationships: where the topographic height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is slightly higher. See Fig. 6A as well as Figure 6B In FIG. 6 , regions 61, 62, and 63 of the upper surface 60 of the wafer 6 are shown. Figure 6B , wherein the topography height of region 61 is substantially lower than that of region 62; and the topography height of region 62 is substantially lower than that of region 63. In this embodiment, when laser processing is performed, the energy density F of the laser 4 is selected to be maintained at a constant value. Since energy density integral distribution = laser pulse integral distribution × energy density F, when energy density F is maintained at a constant value, the laser pulse integral distribution of laser processing performed by laser 4 in region 61 can be controlled to be lower than the laser pulse integral distribution of laser processing performed by laser 4 in region 62, and the laser pulse integral distribution of laser processing performed by laser 4 in region 62 can be controlled to be lower than the laser pulse integral distribution of laser processing performed by laser 4 in region 63, so as to control the energy density integral distribution of laser processing performed by laser 4 in region 61 to be lower than the energy density integral distribution of laser processing performed by laser 4 in region 62, and the energy density integral distribution of laser processing performed by laser 4 in region 62 can be controlled to be lower than the energy density integral distribution of laser processing performed by laser 4 in region 63; therefore, when laser processing is performed, the energy density integral distribution of laser processing performed by laser 4 is slightly higher in the area where the topographic height distribution of the upper surface 60 of the wafer 6 is higher. See Fig. 6A, where each circle represents a single laser pulse of the laser 4 hitting the wafer 6 from the upper surface 60 of the wafer 6 (wherein the energy density F of the laser 4 is maintained at a constant value). In the region 61, the processing path of the laser 4 is from top to bottom or from bottom to top along the three dotted lines in the region 61; wherein the laser pulses along the processing path of the laser 4 (the three dotted lines in the region 61) have a processing path direction overlap rate; and the laser pulses along the processing path of the laser 4 (the three dotted lines in the region 61) have a processing path spacing direction overlap rate (that is, the laser pulses along the processing path of the left dotted line in the region 61 and the laser pulses along the processing path of the middle dotted line in the region 61 have a processing path spacing direction overlap rate, and the laser pulses along the processing path of the middle dotted line in the region 61 and the laser pulses along the processing path of the right dotted line in the region 61 have a processing path spacing direction overlap rate). In area 62, the processing path of laser 4 is from top to bottom or from bottom to top along the three dotted lines in area 62; wherein the laser pulses along the processing path of laser 4 (three dotted lines in area 62) have a processing path direction overlap rate; and the laser pulses along the processing path of laser 4 (three dotted lines in area 62) in the spacing direction have a processing path spacing direction overlap rate (that is, the laser pulses along the processing path of the left dotted line in area 62 and the laser pulses along the processing path of the middle dotted line in area 62 have a processing path spacing direction overlap rate, and the laser pulses along the processing path of the middle dotted line in area 62 and the laser pulses along the processing path of the right dotted line in area 62 have a processing path spacing direction overlap rate). In area 63, the processing path of laser 4 is from top to bottom or from bottom to top along the four dotted lines in area 63; wherein the laser pulses along the direction of the processing path of laser 4 (the four dotted lines in area 63) have a processing path direction overlap rate; and the laser pulses along the spacing direction of the processing path of laser 4 (the four dotted lines in area 63) have a processing path spacing direction overlap rate (that is, the laser pulses along the processing path of the first dotted line on the left in area 63 and the laser pulses along the processing path of the second dotted line on the left in area 63 have a processing path spacing direction overlap rate, the laser pulses along the processing path of the second dotted line on the left in area 63 and the laser pulses along the processing path of the second dotted line on the right in area 63 have a processing path spacing direction overlap rate, and the laser pulses along the processing path of the second dotted line on the right in area 63 and the laser pulses along the processing path of the first dotted line on the right in area 63 have a processing path spacing direction overlap rate).The overlap rate of the processing path direction of the laser pulses in the region 61 is less than the overlap rate of the processing path direction of the laser pulses in the region 62, and the overlap rate of the processing path spacing direction of the laser pulses in the region 61 is equal to the overlap rate of the processing path spacing direction of the laser pulses in the region 62; while the overlap rate of the processing path direction of the laser pulses in the region 62 is equal to the overlap rate of the processing path direction of the laser pulses in the region 63, and the overlap rate of the processing path spacing direction of the laser pulses in the region 62 is less than the overlap rate of the processing path spacing direction of the laser pulses in the region 63. That is, the integral distribution of the laser pulses in the region 61 is lower than the integral distribution of the laser pulses in the region 62; and the integral distribution of the laser pulses in the region 62 is lower than the integral distribution of the laser pulses in the region 63. Therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distribution of the laser pulses that are hit by the laser 4 from the upper surface 60 of the wafer 6 on the wafer 6 by controlling the overlap rate of the laser pulse processing path direction and the overlap rate of the laser pulse processing path interval direction (to control the laser pulse integral distribution in area 61 to be lower than the laser pulse integral distribution in area 62, and to control the laser pulse integral distribution in area 62 to be lower than the laser pulse integral distribution in area 63), and controls the energy density F of the laser 4 to be a constant value to control the energy density integral distribution of the laser processing performed by the laser 4 (to control the energy density integral distribution in area 61 to be lower than the energy density integral distribution in area 62, and to control the energy density integral distribution in area 62 to be lower than the energy density integral distribution in area 63); thereby achieving that during laser processing, the energy density integral distribution of the laser processing performed by the laser 4 is slightly higher at the place where the topography height distribution on the upper surface 60 of the wafer 6 is higher.

[0111] In some embodiments, the energy density F of the laser 4 is a constant value or a variable value. The wafer surface laser processing method of the present invention can control the energy density F of the laser 4 by controlling the power P of the laser 4, the spot area A of the pulse of the laser 4 at its focus, and the pulse repetition rate f of the laser 4; and by controlling the overlap rate of the processing path direction of the laser pulse and the overlap rate of the processing path interval direction of the laser pulse to control the laser pulse integral distribution of the laser pulse of the laser 4 hitting the wafer 6 from the upper surface 60 of the wafer 6; and by controlling the laser pulse integral distribution and controlling the energy density F of the laser 4, the energy density integral distribution of the laser processing performed by the laser 4 can be controlled.

[0112] See also Fig. 7A , which is Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system. Please also refer to Figure 7B , which is Fig. 7ABefore laser processing, the top surface of the wafer is scanned by a scanner. The topographic distribution is along the Fig. 7A In this embodiment, in the wafer surface laser processing method of the present invention, in step B, the scanner 3 can completely scan the upper surface 60 of the wafer 6 to obtain the complete topographical height distribution of the upper surface 60 of the wafer 6, and wherein Figure 7B Only the top surface 60 of the wafer 6 is shown along the Fig. 7A in step C, according to the topography height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing of the wafer 6 with an integrated energy density distribution from the upper surface 60 of the wafer 6 to form a laser processed wafer. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 is selected as the second of the six relationships mentioned above: the topography height distribution of the upper surface 60 of the wafer 6 has a maximum value and a minimum value, the difference between the maximum value and the minimum value of the topography height distribution of the upper surface 60 of the wafer 6 is the height range of the topography height distribution of the upper surface 60 of the wafer 6, the difference between the topography height distribution of the upper surface 60 of the wafer 6 and the minimum value is the normalized topography height distribution of the upper surface 60 of the wafer 6, the ratio of the normalized topography height distribution of the upper surface 60 of the wafer 6 to the height range of the topography height distribution of the upper surface 60 of the wafer 6 is the topography normalized proportion distribution of the upper surface 60 of the wafer 6, wherein the energy density integral distribution of the laser processing performed by the laser 4 is approximately proportional to the topography normalized proportion distribution of the upper surface 60 of the wafer 6. Please refer to Fig. 7A as well as Figure 7B , regions 64 and 65 of the upper surface 60 of the wafer 6. Figure 7B, the topography height distribution of the upper surface 60 of the wafer 6 has a maximum value PH and a minimum value PL. The difference between the maximum value PH and the minimum value PL is the height range PR of the topography height distribution of the upper surface 60 of the wafer 6. The difference between the topography height distribution of the upper surface 60 of the wafer 6 and the minimum value PL is the normalized topography height distribution of the upper surface 60 of the wafer 6. The ratio of the normalized topography height distribution to the height range PR of the upper surface 60 of the wafer 6 is the normalized proportion distribution of the topography of the upper surface 60 of the wafer 6. In the region 64, the difference between the topography height distribution and the minimum value PL (i.e., the normalized topography height distribution) is approximately equal to the height range PR / 3; therefore, in the region 64, the ratio of the normalized topography height distribution to the height range PR (i.e., the normalized proportion distribution of the topography) is approximately 1 / 3. In region 65, the difference between the topography height distribution and the lowest value PL (i.e., the normalized topography height distribution) is approximately equal to (2×topography range PR) / 3; therefore, in region 65, the ratio of the normalized topography height distribution to the topography range PR (i.e., the topography normalized proportion distribution) is approximately 2 / 3. Therefore, the topography normalized proportion distribution in region 65 is approximately twice the topography normalized proportion distribution in region 64. In this embodiment, when laser processing is performed, the energy density F of the laser 4 is selected to be maintained at a constant value. See Fig. 7A , the laser pulse integral distribution of the laser processing performed by the laser 4 in the region 64 is approximately twice the laser pulse integral distribution of the laser processing performed by the laser 4 in the region 65. Since the energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distribution of the laser processing performed by the laser 4 in the region 65 to be twice the laser pulse integral distribution of the laser processing performed by the laser 4 in the region 64 by controlling the overlap rate of the processing path direction of the laser pulse and the overlap rate of the processing path interval direction of the laser pulse, and controls the energy density F of the laser 4 to be a constant value to control the energy density integral distribution of the laser processing performed by the laser 4 in the region 65 to be twice the energy density integral distribution of the laser processing performed by the laser 4 in the region 64; thereby achieving that the energy density integral distribution of the laser processing performed by the laser 4 is approximately proportional to the normalized proportion distribution of the morphology of the upper surface 60 of the wafer 6.

[0113] See also Fig. 8A , which is Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system. Please also refer to Figure 8B , which is Fig. 8A Before laser processing, the top surface of the wafer is scanned by a scanner. The topographic distribution is along the Fig. 8AIn this embodiment, in the wafer surface laser processing method of the present invention, in step B, the scanner 3 completely scans the upper surface 60 of the wafer 6 to obtain the complete topographical height distribution of the upper surface 60 of the wafer 6, and wherein Figure 8B Only the top surface 60 of the wafer 6 is shown along the Fig. 8A Schematic cross-sectional view of the C-C' section line in the figure; in step C, based on the topography height distribution of the upper surface 60 of the wafer 6, the upper surface 60 of the wafer 6 is laser processed by the laser 4 with an integrated energy density distribution to form a laser processed wafer. In this embodiment, the relationship between the integrated energy density distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 is selected as the third of the six aforementioned relationships: where the topography height distribution of the upper surface 60 of the wafer 6 is less than or equal to the minimum height threshold, the integrated energy density distribution of the laser processing performed by the laser 4 is approximately the minimum energy density integrated threshold, wherein the minimum energy density integrated threshold is greater than or equal to zero. Figure 8B In the embodiment, when laser processing is performed, the energy density F of the laser 4 is maintained at a constant value. Fig. 8A The laser pulse integral distribution near the C-C' section line in the figure is approximately constant. Since the energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distribution to be approximately constant by controlling the overlap rate of the laser pulse processing path direction and the overlap rate of the laser pulse processing path interval direction, and controls the energy density F of the laser 4 to be constant, so that: laser pulse integral distribution (approximately constant) × energy density F (constant) =

[0114] Energy density integral distribution (approximately the minimum energy density integral threshold). That is, by controlling the laser pulse integral distribution near the C-C' section line to be approximately constant and controlling the energy density F of the laser 4 to be constant, the energy density integral distribution of the laser processing performed by the laser 4 near the C-C' section line is controlled to be approximately the minimum energy density integral threshold. Thus, in the place where the topography height distribution of the upper surface 60 of the wafer 6 is less than or equal to the minimum height threshold, the energy density integral distribution of the laser processing performed by the laser 4 is approximately the minimum energy density integral threshold (in this embodiment, the minimum energy density integral threshold is greater than zero).

[0115] See also Fig.9A , which is Figure 1 A schematic diagram of yet another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system. Please also refer to Fig. 9B, which is Fig.9A Before laser processing, the top surface of the wafer is scanned by a scanner. The topographic distribution is along the Fig.9A In this embodiment, in the wafer surface laser processing method of the present invention, in step B, the scanner 3 completely scans the upper surface 60 of the wafer 6 to obtain the complete topographical height distribution of the upper surface 60 of the wafer 6, and wherein Fig. 9B Only the top surface 60 of the wafer 6 is shown along the Fig.9A A cross-sectional schematic diagram of the D-D' section line; in step C, based on the topographic height distribution of the upper surface 60 of the wafer 6, the upper surface 60 of the wafer 6 is laser-processed by the laser 4 with an energy density integral distribution to form a laser-processed wafer. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 is selected as the fourth of the six aforementioned relationships: where the topographic height distribution of the upper surface 60 of the wafer 6 is less than or equal to the minimum height threshold, the energy density integral distribution of the laser processing performed by the laser 4 is approximately the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero; and where the topographic height distribution of the upper surface 60 of the wafer 6 is greater than the minimum height threshold, if the topographic height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is approximately higher. Please refer to Fig.9A as well as Fig. 9B In the figure, the upper surface 60 of the wafer 6 has regions 66, 67 and 68, wherein the region outside the regions 66 and 67 is the region 68. Fig. 9B , wherein the topography height distribution of region 68 is less than or equal to the minimum height threshold TL; the topography height distribution of region 66 is greater than the minimum height threshold TL; and the topography height distribution of region 67 is greater than the topography height distribution of region 66. In this embodiment, when laser processing is performed, the energy density F of the laser 4 is selected to be maintained at a constant value. See Fig.9A , in the region 68, the laser pulse integral distribution of the laser processing performed by the laser 4 is approximately constant; since the energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distribution of the laser processing performed by the laser 4 to be approximately constant by controlling the overlap rate of the laser pulse processing path direction and the overlap rate of the laser pulse processing path interval direction, and controls the energy density F of the laser 4 to be constant, so that: laser pulse integral distribution (approximately constant) × energy density F (constant) =

[0116] Energy density integral distribution (approximately the minimum energy density integral threshold). That is, by controlling the laser pulse integral distribution in the region 68 to be approximately constant and controlling the energy density F of the laser 4 to be constant, the energy density integral distribution of the laser processing performed by the laser 4 in the region 68 is controlled to be approximately the minimum energy density integral threshold. Thus, in the area where the topography height distribution of the upper surface 60 of the wafer 6 is less than or equal to the minimum height threshold, the energy density integral distribution of the laser processing performed by the laser 4 is approximately the minimum energy density integral threshold. See Fig.9A , the integral distribution of laser pulses for laser processing performed by laser 4 in region 66 is greater than the integral distribution of laser pulses for laser processing performed by laser 4 in region 68 (approximately a constant value); and the integral distribution of laser pulses for laser processing performed by laser 4 in region 67 is greater than the integral distribution of laser pulses for laser processing performed by laser 4 in region 66. Since energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distribution of laser processing performed by laser 4 in region 66 to be greater than the integral distribution of laser pulses for laser processing performed by laser 4 in region 68 (approximately a constant value); and the laser pulse integral distribution of laser processing performed by laser 4 in region 67 is greater than the integral distribution of laser pulses for laser processing performed by laser 4 in region 66; and controls the energy density F of laser 4 to be a constant value to control the integral distribution of laser pulses for laser processing performed by laser 4 in region 66. The integral distribution of energy density of laser processing performed by laser 4 in region 67 is greater than the integral distribution of energy density of laser processing performed by laser 4 in region 66; thereby achieving that during laser processing, if the height distribution of the morphology of the upper surface 60 of the wafer 6 is greater than the minimum height threshold, the integral distribution of energy density of laser processing performed by the laser 4 on the upper surface 60 of the wafer 6 is higher, then the integral distribution of energy density of laser processing performed by the laser 4 on the wafer 6 is approximately higher.

[0117] In some embodiments, when the topography height distribution of the upper surface 60 of the wafer 6 is less than or equal to the minimum height threshold TL in some areas, laser processing may not be performed in these areas; that is, the minimum integrated energy density threshold is equal to zero.

[0118] See also Figures 10A to 10C , which is Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning in a wafer surface laser processing system. Figures 10A to 10CThe scanning path in is at least applicable when the scanning length SL of the scanner 3 (line scanner) is less than the diameter of the wafer 6 and greater than twice the diameter of the wafer 6. In this embodiment, the driving device 2 includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform is located on the moving platform of X, Y, and Z axes, and the carrying device 5 is located on the rotating platform. The rotating platform allows the wafer 6 carried by the carrying device 5 to rotate along the central Z axis passing through the rotating platform (or along the central axis passing through the wafer 6). The moving platform of X, Y, and Z axes and the rotating platform allow the wafer 6 and the scanner 3 or the wafer 6 and the laser 4 to be relatively displaced (linearly displaced) and relatively rotated. The wafer 6 carried by the carrier 5 is moved along the Z-axis direction by means of the driving device 2, so that the wafer 6 is moved to the height required for scanning by the scanner 3, and the wafer 6 carried by the carrier 5 is moved along the X-axis and Y-axis directions and rotated along the Z-axis of the rotating platform by means of the driving device 2, so that the geometric center of the first rectangle T1 is moved and rotated to just below the scanning center of the scanner 3, so that the scanning range of the scanner 3 coincides with the first rectangle T1, and the scanner 3 performs the first topography (contour) height distribution scan (such as Fig. 10A Then, the wafer 6 is rotated clockwise along the Z axis by an angle θ1 with the help of the rotating platform of the driving device 2, so that the geometric center of the second rectangle T2 is moved below the scanning center of the scanner 3, so that the scanning range of the scanner 3 coincides with the second rectangle T2, and the scanner 3 performs a second topography (contour) height distribution scan (as shown in FIG. Fig. 10B Then, the wafer 6 is rotated clockwise along the Z axis by an angle θ1 with the help of the rotating platform of the driving device 2, so that the geometric center of the third rectangle T3 is moved below the scanning center of the scanner 3, so that the scanning range of the scanner 3 coincides with the third rectangle T3, and the scanner 3 performs a third topography (contour) height distribution scan (as shown in FIG. Fig. 10C As shown). Similarly, the rotating platform of the driving device 2 is used to rotate the wafer 6 clockwise along the Z axis by an angle θ1, and the scanner 3 is used to perform a single topography (contour) height distribution scan. After the scanner 3 completely scans the upper surface 60 of the wafer 6, the scanning result is integrated into the topography height distribution of the upper surface 60 of the wafer 6.

[0119] See also Fig.11 , which is Figure 1 A schematic diagram of another specific embodiment of a scanning path for performing topography height distribution scanning by a wafer surface laser processing system. Fig.11A plurality of identical rectangles (U1-U8) are shown in FIG. The length of each rectangle is equal to the scanning length SL of the scanner 3 (line scanner), and the width of each rectangle is equal to the scanning width SW of the scanner 3 (line scanner). In this embodiment, the driving device 2 includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform is located on the moving platform of X, Y, and Z axes, and the carrying device 5 is located on the rotating platform. The rotating platform allows the wafer 6 carried by the carrying device 5 to rotate along the Z axis passing through the center of the rotating platform (or along the central Z axis passing through the wafer 6). The wafer 6 carried by the carrier 5 is moved along the Z-axis direction by means of the Z-axis moving platform of the driving device 2, so that the wafer 6 is moved to the height required for scanning by the scanner 3, and the wafer 6 carried by the carrier 5 is moved along the X-axis and Y-axis directions by means of the X-axis and Y-axis moving platforms of the driving device 2, and the wafer 6 carried by the carrier 5 is rotated along the Z-axis of the rotating platform by means of the rotating platform of the driving device 2, so that the geometric center of the rectangle U1 is moved to just below the scanning center of the scanner 3, so that the scanning range of the scanner 3 coincides with the rectangle U1, and the scanner 3 is used to scan the wafer 6 carried by the carrier 5 along the Z-axis of the rotating platform. A single topography (contour) height distribution scan is performed; then, the wafer 6 carried by the carrying device 5 is moved and rotated with the help of the driving device 2, and the geometric centers of the rectangles U2~U8 are moved one by one to just below the scanning center of the scanner 3, and the scanning range of the scanner 3 is overlapped with the rectangles U2~U8 one by one, and a single topography (contour) height distribution scan is performed one by one with the scanner 3; then, the scanning range of the scanner 3 is gradually retracted toward the center of the wafer 6 in sequence, so that the scanning path of the scanner 3 is similar to a spiral shape that gradually retracts toward the center of the wafer 6.

[0120] See also Figure 12A to Figure 12B , which is Figure 1 A schematic diagram of another specific embodiment of the integral distribution of laser pulses for laser processing by a wafer surface laser processing system in FIG. In this embodiment, the driving device 2 includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform is located on the moving platform of X, Y, and Z axes, and the carrying device 5 is located on the rotating platform. The rotating platform allows the wafer 6 carried by the carrying device 5 to rotate along the central Z axis passing through the rotating platform (or along the central Z axis passing through the wafer 6). The moving platform of X, Y, and Z axes and the rotating platform allow relative displacement (linear displacement) and relative rotation between the wafer 6 and the scanner 3 or between the wafer 6 and the laser 4. With the help of the driving device 2, the wafer 6 carried by the carrying device 5 is moved along the Z axis direction to the height required for laser 4 processing, and with the help of the driving device 2, the wafer 6 carried by the carrying device 5 is moved along the X and Y axis directions, and laser processing of the wafer 6 is started from the upper surface 60 of the wafer 6, and the first laser pulse R1 (such as Fig. 12AAs shown in FIG. 1 , the rotating platform of the driving device 2 starts to rotate the wafer 6 clockwise along the Z axis, and laser processing is performed while rotating (laser pulses are emitted while rotating), so that the laser 4 emits a laser pulse every time the wafer 6 rotates clockwise along the Z axis by an angle θ2. Therefore, when the wafer 6 rotates clockwise along the Z axis to an angle of 11×θ2, the integral distribution of the laser pulses of the laser processing performed by the laser 4 is as follows: Fig. 12B shown.

[0121] See also Fig.13 , which is a cross-sectional schematic diagram of another specific embodiment of a wafer surface laser processing system of the present invention. Fig.13 The main structure of the embodiment in Figure 1 The structures of the embodiments in are substantially the same, except that the driving device 2 includes a scanning driving device 20 and a processing driving device 21, and the carrying device 5 includes a scanning wafer carrier 50 disposed on the scanning driving device 20 and a processing wafer carrier 51 disposed on the processing driving device 21, wherein the scanning driving device 20 and the processing driving device 21 are independently disposed devices, and the scanning wafer carrier 50 and the processing wafer carrier 51 are respectively used to carry the wafer 6. In this embodiment, the scanning driving device 20 and the processing driving device 21 are respectively mobile platforms of the three axes of X, Y, and Z. In addition, the present invention further provides a wafer surface laser processing method, comprising the following steps: step A: providing a wafer 6, and allowing a scanning wafer carrier 50 (carrying device 5) disposed on a scanning drive device 20 (driving device 2) to carry the wafer 6; step B: using a scanner 3 to perform a topographic height distribution scan on an upper surface 60 of the wafer 6 to obtain a topographic height distribution of the upper surface 60 of the wafer 6, wherein the scanning drive device 20 is used to generate a relative displacement between the wafer 6 and the scanner 3 in the X, Y, and Z axis directions; step C0: The wafer 6 is moved from the scanning wafer carrier 50 to the processing wafer carrier 51 (carrying device 5) disposed on the processing drive device 21 (driving device 2), so that the processing wafer carrier 51 carries the wafer 6; and step C: according to the topographic height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing of the wafer 6 from the upper surface 60 of the wafer 6 with an energy density integral distribution, so as to form a laser processed wafer, wherein the energy density integral distribution of the laser processing performed by the laser 4 is related to the topographic height distribution of the upper surface 60 of the wafer 6. According to different conditions and different requirements, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 can be selected from at least the aforementioned six relationships, wherein the relative displacement between the wafer 6 and the laser 4 in the X, Y, and Z axis directions is generated by the processing drive device 21.

[0122] In some embodiments, Fig.13The scanning drive device 20 of the embodiment includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform is located on the moving platform of X, Y, and Z axes, and the scanning wafer carrier 50 is located on the rotating platform. The rotating platform allows the wafer 6 carried by the scanning wafer carrier 50 to rotate along the central Z axis passing through the rotating platform (or along the central Z axis passing through the wafer 6), wherein the moving platform of X, Y, and Z axes and the rotating platform allow the wafer 6 and the scanner 3 to be relatively displaced (linearly displaced) and relatively rotated. In other embodiments, Fig.13 The processing drive device 21 of the embodiment includes a mobile platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform is located on the mobile platform of X, Y, and Z axes, and the processing wafer carrier 51 is located on the rotating platform. The rotating platform allows the wafer 6 carried by the processing wafer carrier 51 to rotate along the Z axis passing through the center of the rotating platform (or along the Z axis passing through the center of the wafer 6), wherein the mobile platform of X, Y, and Z axes and the rotating platform allow the wafer 6 and the laser 4 to have relative displacement (linear displacement) and relative rotation. In some other embodiments, Fig.13 The scanning driving device 20 of the embodiment includes a moving platform of X, Y and Z axes and a rotating platform (not shown in the figure), and Fig.13 The processing drive device 21 of the embodiment includes a mobile platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the rotating platform of the scanning drive device 20 is located on the mobile platform of X, Y, and Z axes of the scanning drive device 20, and the scanning wafer carrier 50 is located on the rotating platform of the scanning drive device 20. The rotating platform of the scanning drive device 20 enables the wafer 6 carried by the scanning wafer carrier 50 to rotate along the Z axis passing through the center of the rotating platform of the scanning drive device 20 (or along the Z axis passing through the center of the wafer 6 carried by the scanning wafer carrier 50); wherein the rotating platform of the processing drive device 21 is located on the mobile platform of X, Y, and Z axes of the processing drive device 21, and the processing wafer carrier 51 is located on the rotating platform of the processing drive device 21. The rotating platform of the processing drive device 21 enables the wafer 6 carried by the processing wafer carrier 51 to rotate along the Z axis passing through the center of the rotating platform of the processing drive device 21 (or along the Z axis passing through the center of the wafer carried by the processing wafer carrier 51). The X, Y, and Z three-axis movable platforms and rotating platforms of the scanning drive device 20 enable relative displacement (linear displacement) and relative rotation between the wafer 6 and the scanner 3, and the X, Y, and Z three-axis movable platforms and rotating platforms of the processing drive device 21 enable relative displacement (linear displacement) and relative rotation between the wafer 6 and the laser 4.

[0123] See also Fig.14, which is a three-dimensional schematic diagram of a coating device of a wafer surface laser processing system of the present invention. The coating device 7 includes a coated wafer carrier 73, a rotating table 71 and a nozzle 72. The coated wafer carrier 73 is arranged on the rotating table 71. The coated wafer carrier 73 is used to carry the wafer 6. The nozzle 72 is used to supply the auxiliary modified material 70 on the upper surface 60 of the wafer 6. The rotating table 71 can rotate the coated wafer carrier 73 and the wafer 6 carried by the coated wafer carrier 73, so that the auxiliary modified material 70 is evenly coated on the upper surface 60 of the wafer 6 to form an auxiliary modified layer on the upper surface 60 of the wafer 6. In this embodiment, the wafer 6 can be a wafer that has been cut but not yet lapping (for example, a wafer that has been cut from a crystal column but has not yet been lapping), wherein the material constituting the wafer 6 is silicon carbide. A wafer surface laser processing method of the present invention further includes the following steps before performing step C (usually after step B and before step C): coating an auxiliary modified layer on the upper surface 60 of the wafer 6. Since silicon carbide is very hard, the auxiliary modified material 70 is first coated on the upper surface 60 of the wafer 6 to form an auxiliary modified layer, thereby changing the material properties of the wafer 6 adjacent to the upper surface 60 of the wafer 6, so that the wafer 6 adjacent to the upper surface 60 of the wafer 6 becomes softer in hardness, so as to improve the efficiency of the laser processing in the subsequent step C. After the auxiliary modified layer is coated on the upper surface 60 of the wafer 6, step C is performed, and according to the topographic height distribution of the upper surface 60 of the wafer 6 obtained by scanning in step B, the laser 4 is used to perform laser processing of the wafer 6 from the upper surface 60 of the wafer 6 with an energy density integral distribution, so as to form a laser processed wafer, wherein the energy density integral distribution of the laser processing performed by the laser 4 is related to the topographic height distribution of the upper surface 60 of the wafer 6. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 can be selected from at least the first, second, third and fourth types mentioned above.

[0124] In some embodiments, the material constituting the auxiliary modified material 70 (auxiliary modified layer) may be a mixture of a solution containing metal ions, an oxidant, and a buffer solution, wherein the solution containing metal ions includes at least one selected from the following groups: Ag3+ and Cu2+; wherein the oxidant may be hydrogen peroxide (H2O2); wherein the buffer solution may be glacial acetic acid (acetic acid: CH3COOH). In other embodiments, the material constituting the auxiliary modified material 70 (auxiliary modified layer) may be an alkaline solution or colloid, wherein the alkaline solution or colloid includes at least one selected from the following groups: potassium hydroxide (KOH) and ammonia (NH4OH). In still other embodiments, the material constituting the auxiliary modified material 70 (auxiliary modified layer) may be a sol-gel containing a metal or its oxide, wherein the metal includes at least one selected from the following groups: aluminum (Al), boron (B), gallium (Ga), and indium (In), wherein the oxide is an oxide of the aforementioned metal (aluminum, boron, gallium, or indium).

[0125] In some embodiments, Fig.14 The coating device 7 in the embodiment can be used with Figure 1 , Figure 2 as well as Figure 5 Used in conjunction with the wafer surface laser processing system 1, first Figure 1 and Figure 2 The scanner 3 in the apparatus scans the upper surface 60 of the wafer 6 carried on the carrier 5 to obtain the topographical height distribution of the upper surface 60 of the wafer 6; the wafer 6 is then moved to the coating wafer carrier 73 of the coating device 7 to coat the auxiliary modified material 70 (auxiliary modified layer) on the upper surface 60 of the wafer 6; the wafer 6 is then moved to the coating wafer carrier 73 of the coating device 7 to coat the auxiliary modified material 70 (auxiliary modified layer) on the upper surface 60 of the wafer 6; Figure 1 and Figure 3 On the carrier device 5, according to the topographical height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing on the wafer 6 from the upper surface 60 of the wafer 6 with an integrated energy density distribution to form a laser processed wafer.

[0126] In other embodiments, Fig.14 The coating device 7 in the embodiment can be used with Fig.13 The wafer surface laser processing system 1 is used with Fig.13 The scanner 3 in the apparatus scans the upper surface 60 of the wafer 6 carried on the scanning wafer carrier 50 to obtain the topographical height distribution of the upper surface 60 of the wafer 6; the wafer 6 is then moved to the coating wafer carrier 73 of the coating device 7 to coat the auxiliary modified material 70 (auxiliary modified layer) on the upper surface 60 of the wafer 6; the wafer 6 is then moved to the coating wafer carrier 73 of the coating device 7 to coat the auxiliary modified material 70 (auxiliary modified layer) on the upper surface 60 of the wafer 6; Fig.13 On the processing wafer carrier 51, according to the topographical height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing on the wafer 6 from the upper surface 60 of the wafer 6 with an integrated energy density distribution to form a laser processed wafer.

[0127] See also Fig.15A , which is Figure 1 A schematic diagram of another specific embodiment of the integrated distribution of laser pulses for laser processing in a wafer surface laser processing system. Please also refer to Fig. 15B , which is Fig.15A Before laser processing, the top surface of the wafer is scanned by a scanner. The topographic distribution is along the Fig.15A In this embodiment, in the wafer surface laser processing method of the present invention, in step B, the scanner 3 completely scans the upper surface 60 of the wafer 6 to obtain the complete topographic height distribution of the upper surface 60 of the wafer 6, and wherein Fig. 15B Only the top surface 60 of the wafer 6 is shown along the Fig.15A ; in step C, according to the topographic height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing on the upper surface 60 of the wafer 6 with an energy density integral distribution, so as to form a laser processed wafer. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 is selected as the fifth of the six relationships mentioned above: where the topographic height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is slightly lower. See Fig.15A as well as Fig. 15B In FIG. 6 , regions 81, 82, and 83 of the upper surface 60 of the wafer 6 are shown. Fig. 15B , wherein the topography of region 81 is substantially lower than that of region 82; and the topography of region 82 is substantially lower than that of region 83. In this embodiment, when laser processing is performed, the energy density F of the laser 4 is selected to be maintained at a constant value. Fig.15A, wherein the laser pulse integral distribution in region 81 is higher than the laser pulse integral distribution in region 82; and the laser pulse integral distribution in region 82 is higher than the laser pulse integral distribution in region 83. Since energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the overlap rate of the laser pulse processing path direction and the overlap rate of the laser pulse processing path interval direction to control the laser pulse integral distribution of the laser processing performed by the laser 4 in the area 81 to be higher than the laser pulse integral distribution of the laser processing performed by the laser 4 in the area 82, and controls the laser pulse integral distribution of the laser processing performed by the laser 4 in the area 82 to be higher than the laser pulse integral distribution of the laser processing performed by the laser 4 in the area 83, and controls the energy density F of the laser 4 to be a constant value to control the energy density integral distribution of the laser processing performed by the laser 4 in the area 81 to be higher than the energy density integral distribution of the laser processing performed by the laser 4 in the area 82, and controls the energy density integral distribution of the laser processing performed by the laser 4 in the area 82 to be higher than the energy density integral distribution of the laser processing performed by the laser 4 in the area 83; thereby achieving that during laser processing, according to the higher distribution of the topography height on the upper surface 60 of the wafer 6, the energy density integral distribution of the laser processing performed by the laser 4 is slightly lower.

[0128] In some embodiments, in step C of the wafer surface laser processing method of the present invention, based on the topography height distribution of the upper surface 60 of the wafer 6, the laser 4 is used to perform laser processing on the wafer 6 from the upper surface 60 of the wafer 6 with an energy density integral distribution to form a laser processed wafer, wherein the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the upper surface 60 of the wafer 6 is selected as the sixth of the six aforementioned relationships: the topography height distribution of the upper surface 60 of the wafer 6 has a maximum value and a minimum value, and the topography height distribution of the upper surface 60 of the wafer 6 is The difference between the highest value and the lowest value of the distribution is the high and low range of the morphology height distribution of the upper surface 60 of the wafer 6, the difference between the morphology height distribution and the lowest value of the upper surface 60 of the wafer 6 is the normalized morphology height distribution of the upper surface 60 of the wafer 6, the ratio of the normalized morphology height distribution of the upper surface 60 of the wafer 6 to the high and low range of the morphology height distribution of the upper surface 60 of the wafer 6 is the normalized proportion distribution of the morphology of the upper surface 60 of the wafer 6, wherein the integral distribution of energy density of the laser processing performed by the laser 4 is approximately inversely proportional to the normalized proportion distribution of the morphology of the upper surface 60 of the wafer 6.

[0129] See also Fig.16A , which is a cross-sectional schematic diagram of the topographic distribution of a silicon carbide wafer obtained by scanning the upper surface of the silicon carbide wafer using a wafer surface laser processing method of the present invention after cutting and not yet polishing. Fig.16A In the figure, there are regions 84 and 85 of the wafer 6, wherein the morphology of the upper surface 60 of the wafer 6 in region 85 is a higher region; and the morphology of the upper surface 60 in region 84 is a lower region. In this embodiment, the wafer 6 may be a wafer that has been cut but not yet lapped (for example, a wafer that has been cut from a crystal column but not yet lapped), wherein the material constituting the wafer 6 is silicon carbide (SiC). The bottom of the silicon carbide wafer 6 is not actually as Fig.16A The flat surface shown in is usually very uneven. Since silicon carbide is very hard, when the crystal column is cut into silicon carbide, the cut surface is usually very uneven (for example, the upper surface 60 of the wafer 6). Please also refer to Fig. 16B , which is Fig.16A A schematic cross-sectional view of a silicon carbide wafer after laser processing by a wafer surface laser processing method of the present invention. Fig.16A When the wafer 6 is laser processed, in step C, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 is the first of the six relationships mentioned above: where the topographic height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is slightly higher. After the wafer surface laser processing method of the present invention performs laser processing of the wafer 6 with the energy density integral distribution from the upper surface 60 of the wafer 6 by the laser 4, a modified layer 69 is formed adjacent to the upper surface 60 of the wafer 6. After the laser processing of the energy density integral distribution by the laser 4, the material properties of the silicon carbide of the wafer 6 originally at the modified layer 69 are changed, and a modified layer 69 with a softer hardness is formed. Since the energy density integral distribution of the laser processing performed by the laser 4 is adjusted according to the topographical distribution of the upper surface 60 of the wafer 6, the energy density integral distribution of the laser processing performed by the laser 4 is slightly higher at the location where the topographical distribution of the upper surface 60 of the wafer 6 is higher; therefore, Fig. 16BAs shown, after laser processing by the wafer surface laser processing method of the present invention, the thickness of the modified layer 69 is also related to the topographic distribution of the upper surface 60 of the wafer 6; that is, the thickness of the modified layer 69 is thicker where the topographic distribution of the upper surface 60 of the wafer 6 is higher. In this way, the bottom of the modified layer 69 can be maintained in a roughly horizontal state. Therefore, the modified layer 69 with a relatively soft hardness can be directly subjected to fine polishing to be finely ground and polished. Therefore, a wafer surface laser processing method of the present invention can indeed enhance laser modification at places where the topography height distribution of the upper surface 60 of the wafer 6 is higher (at places where the topography height distribution of the upper surface 60 of the wafer 6 is higher, the integral distribution of energy density of laser processing performed by the laser 4 is slightly higher), and weaken laser modification at places where the topography height distribution of the upper surface 60 of the wafer 6 is lower (at places where the topography height distribution of the upper surface 60 of the wafer 6 is lower, the integral distribution of energy density of laser processing performed by the laser 4 is slightly lower), thereby improving the time-consuming, labor-intensive and grinding material-consuming polishing process, and at the same time reducing the overall loss rate of the wafer 6.

[0130] In some embodiments, in step C of the wafer surface laser processing method of the present invention, during the laser processing, a portion of the wafer 6 adjacent to the upper surface 60 of the wafer 6 is removed due to the laser processing, so that the wafer 6 (the upper surface 60 of the wafer 6) is locally flattened. Fig. 16C , which is Fig.16A A schematic cross-sectional view of a silicon carbide wafer that has been locally flattened after being laser processed by a wafer surface laser processing method of the present invention. Fig.16A In the embodiment of FIG. 1 , the energy density integral distribution of the laser processing performed by the laser 4 in the region 85 is particularly high, which may result in that a portion of the wafer 6 adjacent to the upper surface 60 of the wafer 6 in the region 85 may be removed due to the laser processing (for example, Fig. 16C The height of the modified layer 69 in the region 85 is greater than that in Fig. 16C The height of the region 85 in FIG. 8 is low because a portion of the wafer 6 adjacent to the upper surface 60 of the wafer 6 is removed by laser processing. Fig. 16C The height of the modified layer 69 in the region 85 is lower), so that the wafer 6 (the upper surface 60 of the wafer 6) in the region 85 is locally planarized before the wafer 6 is polished.

[0131] exist Fig.9A and 9BIn the embodiment, the integral distribution of laser pulses of the laser processing performed by the laser 4 in the region 67 is particularly high, that is, the integral distribution of energy density of the laser processing performed by the laser 4 in the region 67 is particularly high, which may cause the portion of the wafer 6 adjacent to the upper surface 60 of the wafer 6 in the region 67 to be removed due to the laser processing, causing the wafer 6 (the upper surface 60 of the wafer 6) in the region 67 to be locally flattened before the wafer 6 is polished.

[0132] In some embodiments, the portion of the wafer 6 adjacent to the upper surface 60 of the wafer 6 that is removed due to laser processing occurs in an area where the energy density integral distribution of the laser processing performed by the laser 4 is higher; however, it is not necessarily the case that the portion that is removed due to laser processing and locally flattened will occur in a place where the energy density integral distribution of the laser processing performed by the laser 4 is higher.

[0133] In some embodiments, in step C of the wafer surface laser processing method of the present invention, during the laser processing, a large area of ​​the wafer 6 adjacent to the upper surface 60 of the wafer 6 is removed due to the laser processing, so that the wafer 6 (the upper surface 60 of the wafer 6) is flattened in the entire area. Fig.16D , which is Fig.16A A schematic cross-sectional view of a silicon carbide wafer that is fully flattened after being laser processed by a wafer surface laser processing method of the present invention. Fig.16A In the embodiment of the present invention, after the wafer 6 is laser processed by the laser 4 from the upper surface 60 of the wafer 6 with energy density integral distribution, the wafer 6 processed by the laser 4 is partially removed due to the laser processing, so that the wafer 6 (the upper surface 60 of the wafer 6) is flattened in the whole area (such as Fig.16D As shown), a thinner modified layer 69 is formed.

[0134] The wafer surface laser processing method of the present invention is very suitable for processing wafers that have been cut but not yet lapped. After the wafer surface laser processing method of the present invention is processed, it does not need to be lapped again, and can be directly polished to make the upper surface of the wafer finely ground and polished. Fig.16D In the embodiment, after the wafer surface laser processing method of the present invention uses the laser 4 to perform laser processing on the upper surface 60 of the wafer 6 with energy density integral distribution, the wafer 6 processed by the laser 4 is partially removed due to the laser processing, so that the wafer 6 (the upper surface 60 of the wafer 6) is flattened in the whole area, and a thin modified layer 69 is formed. At this time, polishing can be directly performed to make the upper surface of the wafer finely ground and polished. In addition, Fig. 16B and Fig. 16CIn the embodiment, after the wafer surface laser processing method of the present invention is used to perform laser processing on the upper surface 60 of the wafer 6 with the laser 4, the upper surface of the wafer 6 is directly polished to finely grind and polish the upper surface of the wafer. Fig.16D The embodiment of the present invention is the least time-consuming and labor-intensive to directly perform polishing. Fig. 16C The implementation example is followed by Fig. 16B The embodiment of is relatively time-consuming and labor-intensive.

[0135] A wafer surface laser processing method of the present invention is also suitable for wafer regeneration applications. A wafer surface laser processing method of the present invention comprises the following steps: step A: providing a wafer that needs to be regenerated; step B: scanning the topography height distribution of the upper surface of the wafer with a scanner 3 to obtain the topography height distribution of the upper surface of the wafer; and step C: based on the topography height distribution of the upper surface of the wafer, laser 4 is used to perform laser processing of the wafer from the upper surface of the wafer with an energy density integral distribution to form a laser processed wafer, wherein the energy density integral distribution of the laser processing performed by the laser 4 is related to the topography height distribution of the upper surface of the wafer that needs to be regenerated. In some embodiments, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topography height distribution of the surface of the wafer that needs to be regenerated can be selected from at least the first, second, third and fourth types mentioned above.

[0136] In some embodiments, Figure 1 The driving device 2 of the embodiment includes a mobile platform of three axes, namely, X, Y, and Z, wherein the scanner 3 is arranged on the Z-axis mobile platform of the driving device 2 (not shown in the figure), and the carrying device 5 is arranged on the X- and Y-axis mobile platforms of the driving device 2 (not shown in the figure), wherein the X- and Y-axis mobile platforms of the driving device 2 can move the wafer 6 carried by the carrying device 5 along the X and Y axes, and the Z-axis mobile platform of the driving device 2 can move the scanner 3 along the Z axis. In other embodiments, Figure 1 The driving device 2 of the embodiment includes a mobile platform of three axes, namely, X, Y, and Z, wherein the laser 4 is arranged on the Z-axis mobile platform of the driving device 2 (not shown in the figure), and the carrying device 5 is arranged on the X- and Y-axis mobile platforms of the driving device 2 (not shown in the figure), wherein the X- and Y-axis mobile platforms of the driving device 2 can move the wafer 6 carried by the carrying device 5 along the X and Y axes, and the Z-axis mobile platform of the driving device 2 can move the laser 4 along the Z axis. In some other embodiments, Figure 1The driving device 2 of the embodiment includes an X-axis, Y-axis, and Z-axis moving platform, wherein the scanner 3 and the laser 4 are respectively arranged on the Z-axis moving platform of the driving device 2 (not shown in the figure), and the carrying device 5 is arranged on the X-axis and Y-axis moving platforms of the driving device 2 (not shown in the figure), wherein the X-axis and Y-axis moving platforms of the driving device 2 can move the wafer 6 carried by the carrying device 5 along the X-axis and Y-axis, and the Z-axis moving platform of the driving device 2 can move the scanner 3 and the laser 4 along the Z-axis respectively.

[0137] In some embodiments, Figure 1 The driving device 2 of the embodiment includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the scanner 3 is arranged on the Z-axis moving platform of the driving device 2 (not shown in the figure), the carrying device 5 is arranged on the rotating platform of the driving device 2, and the rotating platform is arranged on the X- and Y-axis moving platforms (not shown in the figure), wherein the X- and Y-axis moving platforms and the rotating platform of the driving device 2 can respectively move the wafer 6 carried by the carrying device 5 along the X- and Y-axes and rotate along the Z-axis passing through the center of the rotating platform (or along the Z-axis passing through the center of the wafer 6), and the Z-axis moving platform of the driving device 2 can move the scanner 3 along the Z-axis. In other embodiments, Figure 1 The driving device 2 of the embodiment includes a mobile platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the laser 4 is arranged on the Z-axis mobile platform of the driving device 2 (not shown in the figure), the carrying device 5 is arranged on the rotating platform of the driving device 2, and the rotating platform is arranged on the X- and Y-axis mobile platforms (not shown in the figure), wherein the X- and Y-axis mobile platforms and the rotating platform of the driving device 2 can respectively move the wafer 6 carried by the carrying device 5 along the X- and Y-axes and rotate along the Z-axis passing through the center of the rotating platform (or along the Z-axis passing through the center of the wafer 6), and the Z-axis mobile platform of the driving device 2 can move the laser 4 along the Z-axis. In some other embodiments, Figure 1 The driving device 2 of the embodiment includes an X-axis, Y-axis, and Z-axis moving platform and a rotating platform (not shown in the figure), wherein the scanner 3 and the laser 4 are respectively arranged on the Z-axis moving platform of the driving device 2 (not shown in the figure), the carrying device 5 is arranged on the rotating platform of the driving device 2, and the rotating platform is arranged on the X-axis and Y-axis moving platforms (not shown in the figure), wherein the X-axis and Y-axis moving platforms and the rotating platform of the driving device 2 can respectively move the wafer 6 carried by the carrying device 5 along the X-axis and Y-axis and rotate along the Z-axis passing through the center of the rotating platform (or along the Z-axis passing through the center of the wafer 6), and the Z-axis moving platform of the driving device 2 can respectively move the scanner 3 and the laser 4 along the Z-axis.

[0138] In some embodiments, Fig.13The scanning drive device 20 of the embodiment includes a moving platform of three axes, namely, X, Y, and Z, wherein the scanner 3 is arranged on the moving platform of the Z axis of the scanning drive device 20 (not shown in the figure), and the scanning wafer carrier 50 is arranged on the moving platform of the X and Y axes of the scanning drive device 20 (not shown in the figure), wherein the moving platform of the X and Y axes of the scanning drive device 20 can move the wafer 6 carried by the scanning wafer carrier 50 along the X and Y axes, and the moving platform of the Z axis of the scanning drive device 20 can move the scanner 3 along the Z axis. In other embodiments, Fig.13 In the embodiment of the processing drive device 21, the processing drive device 21 includes a mobile platform of three axes, namely, X, Y, and Z, wherein the laser 4 is arranged on the Z-axis mobile platform of the processing drive device 21 (not shown in the figure), and the processing wafer carrier 51 is arranged on the X- and Y-axis mobile platforms of the processing drive device 21 (not shown in the figure), wherein the X- and Y-axis mobile platforms of the processing drive device 21 can move the wafer 6 carried by the processing wafer carrier 51 along the X and Y axes, and the Z-axis mobile platform of the processing drive device 21 can move the laser 4 along the Z axis. In some other embodiments, Fig.13 The scanning driving device 20 of the embodiment includes a moving platform of three axes: X, Y and Z. Fig.13 The processing drive device 21 of the embodiment includes an X-axis, Y-axis, and Z-axis moving platform, wherein the scanner 3 is arranged on the Z-axis moving platform of the scanning drive device 20 (not shown in the figure), and the scanning wafer carrier 50 is arranged on the X-axis and Y-axis moving platforms of the scanning drive device 20 (not shown in the figure), wherein the laser 4 is arranged on the Z-axis moving platform of the processing drive device 21 (not shown in the figure), and the processing wafer carrier 51 is arranged on the X-axis and Y-axis moving platforms of the processing drive device 21 (not shown in the figure), wherein the X-axis and Y-axis moving platforms of the scanning drive device 20 can move the wafer 6 carried by the scanning wafer carrier 50 along the X-axis and Y-axis, and the Z-axis moving platform of the scanning drive device 20 can move the scanner 3 along the Z-axis, wherein the X-axis and Y-axis moving platforms of the processing drive device 21 can move the wafer 6 carried by the processing wafer carrier 51 along the X-axis and Y-axis, and the Z-axis moving platform of the processing drive device 21 can move the laser 4 along the Z-axis.

[0139] In some embodiments, Fig.13The scanning drive device 20 of the embodiment includes a moving platform of X, Y, and Z axes and a rotating platform (not shown in the figure), wherein the scanner 3 is arranged on the Z-axis moving platform of the scanning drive device 20 (not shown in the figure), the scanning wafer carrier 50 is arranged on the rotating platform of the scanning drive device 20, and the rotating platform is arranged on the X- and Y-axis moving platforms of the scanning drive device 20 (not shown in the figure), wherein the X- and Y-axis moving platforms of the scanning drive device 20 and the rotating platform of the scanning drive device 20 can respectively move the wafer 6 carried by the scanning wafer carrier 50 along the X- and Y-axes and rotate along the Z-axis passing through the center of the rotating platform of the scanning drive device 20 (or along the Z-axis passing through the center of the wafer 6), and the Z-axis moving platform of the scanning drive device 20 can move the scanner 3 along the Z-axis. In other embodiments, Fig.13 The processing drive device 21 of the embodiment includes an X-axis, Y-axis, and Z-axis moving platform and a rotating platform (not shown in the figure), wherein the laser 4 is arranged on the Z-axis moving platform (not shown in the figure) of the processing drive device 21, and the processing wafer carrier 51 is arranged on the rotating platform of the processing drive device 21, and the rotating platform is arranged on the X-axis and Y-axis moving platforms (not shown in the figure) of the processing drive device 21, wherein the X-axis and Y-axis moving platforms of the processing drive device 21 and the rotating platform of the processing drive device 21 can respectively move the wafer 6 carried by the processing wafer carrier 51 along the X-axis and Y-axis and rotate along the Z-axis passing through the center of the rotating platform of the processing drive device 21 (or along the Z-axis passing through the center of the wafer 6), and the Z-axis moving platform of the processing drive device 21 can move the laser 4 along the Z-axis. In some other embodiments, Fig.13 The scanning driving device 20 of the embodiment includes a moving platform of three axes, namely, X, Y, and Z, and a rotating platform (not shown in the figure). Fig.13The processing drive device 21 of the embodiment includes an X-axis, Y-axis, and Z-axis moving platform and a rotating platform (not shown in the figure), wherein the scanner 3 is arranged on the Z-axis moving platform of the scanning drive device 20 (not shown in the figure), the scanning wafer carrier 50 is arranged on the rotating platform of the scanning drive device 20, and the rotating platform is arranged on the X- and Y-axis moving platforms of the scanning drive device 20 (not shown in the figure), wherein the laser 4 is arranged on the Z-axis moving platform of the processing drive device 21 (not shown in the figure), the processing wafer carrier 51 is arranged on the rotating platform of the processing drive device 21, and the rotating platform is arranged on the X- and Y-axis moving platforms of the processing drive device 21 (not shown in the figure), wherein the X- and Y-axis moving platforms and The rotating platform of the scanning drive device 20 can respectively move the wafer 6 carried by the scanning wafer carrier 50 along the X and Y axes and rotate along the Z axis passing through the center of the rotating platform of the scanning drive device 20 (or along the Z axis passing through the center of the wafer 6), and the Z-axis moving platform of the scanning drive device 20 can move the scanner 3 along the Z axis, wherein the X and Y-axis moving platforms of the processing drive device 21 and the rotating platform of the processing drive device 21 can respectively move the wafer 6 carried by the processing wafer carrier 51 along the X and Y axes and rotate along the Z axis passing through the center of the rotating platform of the processing drive device 21 (or along the Z axis passing through the center of the wafer 6), and the Z-axis moving platform of the processing drive device 21 can move the laser 4 along the Z axis.

[0140] See also Fig.17 , which is Figure 1A schematic diagram of another specific embodiment of the integral distribution of laser pulses for laser processing by a wafer surface laser processing system. In this embodiment, the scanner 3 is a sensor, wherein the sensor may be a distance sensor or a height sensor. A wafer surface laser processing method of the present invention comprises the following steps: Step A: providing a wafer 6 so that a carrying device 5 disposed on a driving device 2 carries the wafer 6; Step B: scanning the upper surface 60 of the wafer 6 for a topographic height distribution with the scanner 3 to obtain a topographic height distribution of the upper surface 60 of the wafer 6; and Step C: performing laser processing of the wafer 6 with an energy density integral distribution from the upper surface 60 of the wafer 6 with the laser 4 according to the topographic height distribution of the upper surface 60 of the wafer 6 to form a laser processed wafer. In step B, the upper surface 60 of the wafer 6 is roughly divided into twenty-five areas (including area 74, area 75, area 76, area 77, area 78 and other unnumbered twenty areas) by dotted lines. When the scanner 3 performs a topography height distribution scan, the driving device 2 is used to make the wafer 6 carried by the carrying device 5 and the scanner 3 relatively displaced, and the test points of the twenty-five areas are respectively located directly below the scanner 3, and then the scanner 3 (sensor) is used to measure the topography height values ​​of the test points of the twenty-five areas, and twenty-five topography height values ​​are obtained (a topography height value is measured at the test point in each area), wherein the test point in each area can be located at the center point of the area, adjacent to the center point of the area, or a point in the area suitable for measurement; these twenty-five topography height values ​​are the topography height distribution of the upper surface 60 of the wafer 6. The topographic height values ​​measured by the scanner 3 at the points to be tested in area 74, the points to be tested in area 76, and the points to be tested in area 78 are approximately the same; the topographic height values ​​measured by the scanner 3 at the points to be tested in area 75 are greater than the topographic height values ​​measured by the scanner 3 at the points to be tested in area 74, the points to be tested in area 76, and the points to be tested in area 78; the topographic height values ​​measured by the scanner 3 at the points to be tested in area 77 are greater than the topographic height values ​​measured by the scanner 3 at the points to be tested in area 75. In this embodiment, the relationship between the energy density integral distribution of the laser processing performed by the laser 4 and the topographic height distribution of the upper surface 60 of the wafer 6 is selected as the first of the six relationships mentioned above: where the topographic height distribution of the upper surface 60 of the wafer 6 is higher, the energy density integral distribution of the laser processing performed by the laser 4 is approximately higher. In this embodiment, when performing laser processing, the energy density F of the laser 4 is selected to be maintained at a constant value. Please refer to Fig.17, wherein the laser pulse integral distributions in regions 74, 76, and 78 are approximately equal; the laser pulse integral distributions in regions 74, 76, and 78 are lower than the laser pulse integral distribution in region 75; and the laser pulse integral distribution in region 75 is lower than the laser pulse integral distribution in region 77. Since energy density integral distribution = laser pulse integral distribution × energy density F; therefore, in this embodiment, the wafer surface laser processing method of the present invention controls the laser pulse integral distributions of the laser processing performed by the laser 4 in regions 74, 76, and 78 to be approximately equal by controlling the overlap rate of the laser pulses in the processing path direction and the overlap rate of the laser pulses in the processing path interval direction, controls the laser pulse integral distributions of the laser processing performed by the laser 4 in regions 74, 76, and 78 to be lower than the laser pulse integral distribution of the laser processing performed by the laser 4 in region 75, and controls the laser pulse integral distribution of the laser processing performed by the laser 4 in region 75 to be lower than the laser pulse integral distribution of the laser processing performed by the laser 4 in region 77. , and by controlling the energy density F of the laser 4 to be a constant value, the energy density integral distribution of the laser processing performed by the laser 4 in the regions 74, 76 and 78 is controlled to be approximately equal, the energy density integral distribution of the laser processing performed by the laser 4 in the regions 74, 76 and 78 is controlled to be lower than the energy density integral distribution of the laser processing performed by the laser 4 in the region 75, and the energy density integral distribution of the laser processing performed by the laser 4 in the region 75 is controlled to be lower than the energy density integral distribution of the laser processing performed by the laser 4 in the region 77; thereby achieving that during laser processing, the energy density integral distribution of the laser processing performed by the laser 4 is approximately higher at the places where the topography height distribution on the upper surface 60 of the wafer 6 is higher. In this embodiment, the scanner 3 (sensor) only needs to measure the topography height values ​​of the points to be measured in twenty-five regions, so the scanning speed is very fast, which can save a lot of time cost.

[0141] In some embodiments, the scanner 3 is a sensor, wherein the sensor may be a distance sensor or a height sensor, the upper surface 60 of the wafer 6 is divided into N areas, and the scanner 3 (sensor) is used to measure the morphological height values ​​of the points to be measured in the N areas, wherein N is greater than 25. In other embodiments, the scanner 3 is a sensor, wherein the sensor may be a distance sensor or a height sensor, the upper surface 60 of the wafer 6 is divided into N areas, and the scanner 3 (sensor) is used to measure the morphological height values ​​of the points to be measured in the N areas, wherein N is less than 25. The size of the above N depends on actual needs. The points to be measured in each of the above areas may be located at the center point of the area, adjacent to the center point of the area, or at a point in the area suitable for measurement.

[0142] In some embodiments, the scanner 3 is a sensor matrix, and the sensor matrix has N sensors, wherein the sensors may be distance sensors or height sensors, and the upper surface 60 of the wafer 6 is divided into N regions, wherein the relative positions of the N sensors of the sensor matrix correspond to the relative positions of the points to be measured in the N regions, and then the scanner 3 (N sensors of the sensor matrix) respectively measures the topographic height values ​​of the points to be measured in the N regions, wherein the points to be measured in each region may be located at the center point of the region, adjacent to the center point of the region, or at a point in the region suitable for measurement, wherein N may be greater than 25, equal to 25, or less than 25. Since the N sensors of the sensor matrix can perform measurements simultaneously, the scanning speed is faster, which can save a lot of time costs.

[0143] In some embodiments, in step B of a wafer surface laser processing method of the present invention, when the scanner 3 is used to scan the upper surface 60 of the wafer 6 for the topographic height distribution, the upper surface 60 of the wafer 6 is selected to be completely scanned. In other embodiments, in step B of a wafer surface laser processing method of the present invention, when the scanner 3 is used to scan the upper surface 60 of the wafer 6 for the topographic height distribution, the upper surface 60 of the wafer 6 is selected to be scanned partially. In still other embodiments, in step B of a wafer surface laser processing method of the present invention, when the scanner 3 is used to scan the upper surface 60 of the wafer 6 for the topographic height distribution, the upper surface 60 of the wafer 6 is selected to be scanned partially. Fig.17 The embodiment of the present invention is to scan roughly. Whether it is a complete or partial scan, or a fine or rough scan, it depends on the actual needs.

[0144] The above are specific embodiments of the present invention and the technical means used. According to the disclosure or teaching of this article, many changes and modifications can be derived and deduced, which can still be regarded as equivalent changes made to the concept of the present invention. The effects produced still do not exceed the essential spirit covered by the description and drawings, and should be regarded as within the technical scope of the present invention. It is stated in advance.

Claims

1. A wafer surface laser processing method, characterized in that: The following steps are involved: Step A: providing a wafer; Step B: scanning the topography height distribution of the upper surface of the wafer using a scanner to obtain the topography height distribution of the upper surface of the wafer; and Step C: Based on the topographic height distribution on the upper surface of the wafer, laser processes the wafer with an energy density integral distribution from the upper surface of the wafer to form a laser processed wafer, wherein the energy density integral distribution is related to the topographic height distribution.

2. The wafer surface laser processing method according to claim 1, characterized in that: The relationship between the energy density integral distribution and the topography height distribution includes one selected from the following groups: (1) The one with a higher morphology height distribution has a slightly higher energy density integrated distribution; (2) the morphology height distribution has a maximum value and a minimum value, the difference between the maximum value and the minimum value is the height range of the morphology height distribution, the difference between the morphology height distribution and the minimum value is the normalized morphology height distribution, the ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, wherein the energy density integral distribution is approximately proportional to the morphology normalized proportion distribution; (3) When the topography height distribution is less than or equal to the minimum height threshold, the energy density integral distribution is approximately equal to the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero; (4) When the topography height distribution is less than or equal to the minimum height threshold, the energy density integral distribution is approximately equal to the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero; when the topography height distribution is greater than the minimum height threshold, the energy density integral distribution is approximately higher for the topography height distribution that is higher; (5) The one with a higher morphology height distribution has a slightly lower energy density integrated distribution; (6) The morphology height distribution has a maximum value and a minimum value, the difference between the maximum value and the minimum value is the height range of the morphology height distribution, the difference between the morphology height distribution and the minimum value is the normalized morphology height distribution, the ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, wherein the energy density integral distribution is approximately inversely proportional to the morphology normalized proportion distribution.

3. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: The wafer surface laser processing method controls the energy density integral distribution by controlling at least one of the energy density of the laser and the laser pulse integral distribution.

4. The wafer surface laser processing method according to claim 3, characterized in that: The wafer surface laser processing method controls the laser pulse integral distribution by controlling at least one of the overlap rate in the processing path direction and the overlap rate in the processing path interval direction of the plurality of laser pulses generated by the laser.

5. The wafer surface laser processing method according to claim 3, characterized in that: The energy density of the laser is greater than a minimum energy density threshold.

6. The wafer surface laser processing method according to claim 5, characterized in that: The minimum energy density threshold is related to the wavelength of the laser and the material constituting the wafer.

7. The wafer surface laser processing method according to claim 3, characterized in that: The wafer surface laser processing method controls the energy density by selecting at least one of the pulse repetition rate of the laser, controlling the power of the laser, and adjusting the spot area of ​​the laser.

8. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: Before the step C, the wafer surface laser processing method further comprises the following steps: coating an auxiliary modified layer on the upper surface of the wafer.

9. The wafer surface laser processing method according to claim 8, characterized in that: The material constituting the auxiliary modified layer includes at least one selected from the following group: (1) a mixture of a solution containing metal ions, an oxidant and a buffer solution; (2) containing alkaline solutions or colloids; (3) At least one of a sol-gel containing a metal and a sol-gel containing an oxide of the metal.

10. The wafer surface laser processing method according to claim 9, characterized in that: The material constituting the auxiliary modified layer is a mixed solution of the metal ion-containing solution, the oxidant and the buffer solution; Wherein, the material constituting the solution containing metal ions includes Ag 3+ The solution of ions and Cu 2+ In at least one of the solutions containing ions, the material constituting the oxidant is hydrogen peroxide, and the material constituting the buffer is glacial acetic acid.

11. The wafer surface laser processing method according to claim 9, characterized in that: The material constituting the auxiliary modified layer is the alkaline solution or colloid; The material constituting the alkaline solution or colloid includes at least one of potassium hydroxide and ammonia water.

12. The wafer surface laser processing method according to claim 9, characterized in that: The material constituting the auxiliary modified layer is at least one of the metal-containing sol-gel and the metal oxide sol-gel; The material constituting the metal includes at least one of aluminum, boron, gallium and indium, and the material constituting the metal oxide includes at least one of aluminum oxide, boron oxide, gallium oxide and indium oxide.

13. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: After step C, the wafer surface laser processing method further includes the following steps: polishing the upper surface of the wafer after laser processing.

14. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: In the step C, at least a portion of the wafer adjacent to the upper surface of the wafer is removed.

15. The wafer surface laser processing method according to claim 14, characterized in that: At least a portion of the wafer that is removed has a higher distribution of topography, so that the wafer is at least partially flattened.

16. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: In the step C, a portion of the wafer adjacent to the upper surface of the wafer is removed to flatten the entire wafer.

17. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: The laser includes at least one selected from the following group: a diode-pumped solid-state laser, a gas laser, a semiconductor laser, and a fiber laser.

18. The wafer surface laser processing method according to any one of claims 1 or 2, characterized in that: The material constituting the wafer includes at least one selected from the following group: silicon carbide, gallium oxide, sapphire, indium phosphide, gallium arsenide, diamond, gallium nitride, gallium phosphide, quartz, silicon, aluminum nitride, indium arsenide, silicon germanium, germanium, and a ceramic substrate.

19. A wafer surface laser processing system, characterized in that: include: Drive equipment; A carrying device, disposed on the driving device, and used for carrying a wafer; A scanner, wherein the driving device is used to cause at least one of relative displacement and relative rotation between the scanner and the wafer, and the scanner is used to scan the topography height distribution of the upper surface of the surgical wafer to obtain the topography height distribution of the upper surface of the wafer; and Laser, wherein the driving device is used to make at least one of relative displacement and relative rotation between the laser and the wafer, and the laser is used to perform laser processing of the wafer with an integral energy density distribution from the upper surface of the wafer according to the topography height distribution, so as to form a laser-processed wafer, wherein the integral energy density distribution is related to the topography height distribution.

20. The wafer surface laser processing system according to claim 19, characterized in that: The relationship between the energy density integral distribution and the topography height distribution includes one selected from the following groups: (1) The one with a higher morphology height distribution has a slightly higher energy density integrated distribution; (2) the morphology height distribution has a maximum value and a minimum value, the difference between the maximum value and the minimum value is the height range of the morphology height distribution, the difference between the morphology height distribution and the minimum value is the normalized morphology height distribution, the ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, wherein the energy density integral distribution is approximately proportional to the morphology normalized proportion distribution; (3) When the topographic height distribution is less than or equal to the minimum height threshold, the energy density integral distribution is approximately equal to the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero; (4) When the topography height distribution is less than or equal to a minimum height threshold, the energy density integral distribution is approximately equal to the energy density integral minimum threshold, wherein the energy density integral minimum threshold is greater than or equal to zero; when the topography height distribution is greater than the minimum height threshold, the energy density integral distribution is approximately higher for the topography height distribution that is higher; (5) The one with a higher morphology height distribution has a slightly lower energy density integrated distribution; (6) The morphology height distribution has a maximum value and a minimum value, the difference between the maximum value and the minimum value is the height range of the morphology height distribution, the difference between the morphology height distribution and the minimum value is the normalized morphology height distribution, the ratio of the normalized morphology height distribution to the height range is the morphology normalized proportion distribution, wherein the energy density integral distribution is approximately inversely proportional to the morphology normalized proportion distribution.

21. The wafer surface laser processing system according to any one of claims 19 or 20, characterized in that: The driving device includes a scanning driving device and a processing driving device, and the carrying device includes a scanning wafer carrier arranged on the scanning driving device and a processing wafer carrier arranged on the processing driving device; The scanning drive device is used to enable at least one of relative displacement and relative rotation between the scanner and the wafer carried by the scanning wafer carrier; the processing drive device is used to enable at least one of relative displacement and relative rotation between the laser and the wafer carried by the processing wafer carrier.

22. The wafer surface laser processing system according to any one of claims 19 or 20, characterized in that: The wafer surface laser processing system further includes a coating device, which includes a coated wafer carrier. The coating device is used to carry the wafer with the coated wafer carrier and coat an auxiliary modified layer on the upper surface of the wafer before the laser performs laser processing on the wafer.

23. The wafer surface laser processing system according to claim 22, characterized in that: The material constituting the auxiliary modified layer includes at least one selected from the following group: (1) a mixture of a solution containing metal ions, an oxidant and a buffer solution; (2) containing alkaline solutions or colloids; (3) At least one of a sol-gel containing a metal and a sol-gel containing an oxide of the metal.

24. The wafer surface laser processing system according to claim 23, characterized in that: The material constituting the auxiliary modified layer is a mixed solution of the metal ion-containing solution, the oxidant and the buffer solution; Wherein, the material constituting the solution containing metal ions includes Ag 3+ Ion solution and Cu 2+ In at least one of the solutions containing ions, the material constituting the oxidant is hydrogen peroxide, and the material constituting the buffer is glacial acetic acid.

25. The wafer surface laser processing system according to claim 23, characterized in that: The material constituting the auxiliary modified layer is the alkaline solution or colloid; The material constituting the alkaline solution or colloid includes at least one selected from the following group: potassium hydroxide and ammonia water.

26. The wafer surface laser processing system according to claim 23, characterized in that: The material constituting the auxiliary modified layer is at least one of the metal-containing sol-gel and the metal oxide sol-gel; The material constituting the metal includes at least one selected from the following group: aluminum, boron, gallium and indium; the material constituting the metal oxide includes at least one selected from the following group: aluminum oxide, boron oxide, gallium oxide and indium oxide.

27. The wafer surface laser processing system according to any one of claims 19 or 20, characterized in that: The laser includes at least one selected from the following group: a diode-pumped solid-state laser, a gas laser, a semiconductor laser, and a fiber laser.

28. The wafer surface laser processing system according to any one of claims 19 or 20, characterized in that: The scanner includes one selected from the following group: a line scanner, an area scanner, a height sensor, a distance sensor, and a 3D scanner.

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