Diamond wire hydrophilic modification method and device and application of diamond wire hydrophilic modification method and device

Abstract

The invention relates to the technical field of diamond wires, in particular to a hydrophilic modification method and device for a diamond wire and application of the hydrophilic modification method and device. The hydrophilic modification method for the diamond wire comprises the following steps: carrying out plasma treatment on the surface of the diamond wire to obtain the modified diamond wire with a water drop contact angle less than or equal to 50 degrees. Through hydrophilic modification on the surface of the diamond wire, the liquid carrying capacity of the diamond wire can be improved, then the slicing quality is improved, and the slicing cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of diamond wires, and in particular to a method and device for hydrophilic modification of diamond wires and applications thereof. Background Art

[0002] The ability of a solid surface to carry liquid is related to the properties of the solid surface and the liquid. The surface of the diamond wire has a super-hydrophobic nickel coating, which is not easily wetted by the cutting liquid system.

[0003] The existing method of improving the ability of diamond wire to carry cutting fluid is to improve the wetting ability of cutting fluid by using low surface tension wetting agents or increasing the concentration of wetting agents based on the characteristics of cutting fluid. Although this method can improve the carrying ability, there are the following problems: (1) Low surface tension wetting agents usually cause serious foaming problems. The foam generated by the cutting fluid under high-speed flow or shear conditions will reduce the carrying ability of diamond wire; (2) Increasing the concentration of wetting agents is limited by the solubility of wetting agents, and after exceeding a certain concentration, increasing the concentration of wetting agents will no longer significantly reduce the surface tension; (3) Using low surface tension wetting agents or increasing the concentration of wetting agents will significantly increase the cost of cutting fluid.

[0004] In view of this, the present invention is proposed. Summary of the invention

[0005] The first object of the present invention is to provide a method for hydrophilic modification of diamond wire, which can improve the liquid carrying capacity of diamond wire by hydrophilic modification of the surface of diamond wire, thereby improving the slice quality and reducing the slice cost, thereby avoiding the technical problems caused by using low surface tension wetting agents or increasing the concentration of wetting agents.

[0006] The second object of the present invention is to provide a device for hydrophilic modification of diamond wire, which can achieve hydrophilic modification of diamond wire.

[0007] The third object of the present invention is to provide the use of the above-mentioned method or device for hydrophilic modification of diamond wire in cutting silicon wafers.

[0008] In order to achieve the above-mentioned purpose of the present invention, the following technical solutions are particularly adopted:

[0009] The present invention firstly provides a method for hydrophilic modification of diamond wire, comprising the following steps: performing plasma treatment on the surface of the diamond wire to obtain a modified diamond wire with a water drop contact angle of ≤50°.

[0010] Furthermore, the temperature of the outer flame of the plasma treatment flame is 50-60°C.

[0011] Furthermore, the distance between the outer flame of the plasma treatment flame and the diamond wire is 0.01 to 0.05 cm.

[0012] Furthermore, the flame diameter of the plasma treatment is 0.5 to 1.5 cm.

[0013] Furthermore, the processing gas of the plasma treatment includes oxygen and / or air.

[0014] Furthermore, the gas flow rate of the plasma treatment is 10 to 26 sccm.

[0015] Furthermore, the plasma treatment time is 0.05 to 0.10 seconds per meter.

[0016] Furthermore, the power of the plasma treatment is 500-1000W.

[0017] Furthermore, the discharge frequency of the plasma treatment is 35-45 KHz.

[0018] Furthermore, the equipment used for the plasma treatment includes a plasma spray gun.

[0019] Furthermore, the power of the plasma treatment is 800-1000W.

[0020] The present invention further provides a device for hydrophilic modification of diamond wire, which is suitable for the method for hydrophilic modification of diamond wire, and the device for hydrophilic modification of diamond wire comprises a pay-off wheel, a first guide wheel, a second guide wheel, a cutting chamber and a wire taking-up chamber which are arranged in sequence; wherein the pay-off wheel is used to release the rewound diamond wire, and the first guide wheel moves along with the routing of the diamond wire on the pay-off wheel; the second guide wheel is fixedly arranged, and the second guide wheel is used to guide the diamond wire into the cutting chamber for wiring; the cutting chamber is used for wiring cutting, and the wire taking-up chamber is used for wire taking-up; a plasma treatment device is arranged below the second guide wheel, and the plasma treatment device is used to perform plasma surface treatment on the diamond wire introduced into the second guide wheel.

[0021] Furthermore, the plasma processing equipment includes a plasma spray gun.

[0022] Furthermore, the plasma spray gun includes a direct-injection plasma spray gun.

[0023] Furthermore, the linear operating speed of the cutting machine of the cutting chamber is 10 to 20 m / s.

[0024] The present invention also provides the use of the method for hydrophilic modification of diamond wire or the device for hydrophilic modification of diamond wire in cutting silicon wafers.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] (1) The method for hydrophilic modification of diamond wire provided by the present invention can achieve the purpose of improving the ability of diamond wire to carry liquid by hydrophilic modification of the surface of diamond wire, thereby solving the problems of excessive foam, high cost, and high lower limit of surface tension in the prior art of improving the ability of diamond wire to carry liquid by reducing the surface tension of cutting liquid.

[0027] (2) The method for hydrophilic modification of diamond wire provided by the present invention can more effectively improve the liquid carrying capacity of diamond wire, and more cutting liquid components can be retained near the surface of the diamond wire, thereby improving the quality of slicing.

[0028] (3) The method for hydrophilic modification of diamond wire provided by the present invention will not affect the foam properties of the cutting fluid and can avoid the negative impact of the foam on the fluid.

[0029] (4) The method for hydrophilic modification of diamond wire provided by the present invention has lower cost and does not require the use of a wetting agent with higher cost.

[0030] (5) The method for hydrophilic modification of diamond wire provided by the present invention can reduce the amount of cutting fluid used and reduce the cost of using the cutting fluid.

[0031] (6) The device for hydrophilic modification of diamond wire provided by the present invention has low cost, high efficiency and is easy to implement for hydrophilic modification of the surface of diamond wire. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0033] Figure 1 This is a schematic structural diagram of the device for hydrophilic modification of diamond wire provided by the present invention.

[0034] Reference numerals:

[0035] 1-pay-off wheel; 2-first guide wheel; 3-second guide wheel; 4-cutting chamber; 5-take-up chamber; 6-plasma treatment equipment. DETAILED DESCRIPTION

[0036] The technical scheme of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and specific embodiments, but it will be understood by those skilled in the art that the following described embodiments are part of embodiments of the present invention, rather than all embodiments, and are only used to illustrate the present invention, and should not be considered as limiting the scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of protection of the present invention. If specific conditions are not specified in the embodiments, they are carried out according to normal conditions or conditions recommended by the manufacturer. If the manufacturer is not specified in the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0037] If there is no special explanation, in the present invention, "the first aspect", "the second aspect", "the third aspect", "the fourth aspect", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or quantity, nor can they be understood as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "the first", "the second", "the third", "the fourth", etc. only serve the purpose of non-exhaustive enumeration and description, and it should be understood that they do not constitute a closed limitation on quantity.

[0038] If there is no special explanation, the "include" and "comprising" mentioned in the present invention represent open-ended or closed-ended expressions. For example, the "include" and "comprising" may represent that other components not listed may also be included or only the listed components may be included or only the listed components may be included.

[0039] If there is no special explanation, in the present invention, "one or more" or "at least one" refers to any one, any two or more of the listed items. Among them, "several" refers to any two or more of the listed items.

[0040] In a first aspect, the present invention provides a method for hydrophilic modification of diamond wire, which specifically comprises the following steps: performing plasma treatment on the surface of the diamond wire to obtain a modified diamond wire with a water drop contact angle of ≤50°, i.e., good wettability to water.

[0041] After plasma treatment, the water droplet contact angle of the modified diamond wire obtained is ≤50°, indicating that the modified diamond wire has good hydrophilicity, wherein the water droplet contact angle includes but is not limited to any point value of 50°, 45°, 40°, 35°, 30°, 25°, 20° or a range value between any two of them.

[0042] The prior art does not improve the liquid carrying capacity of diamond wire from the perspective of surface modification of diamond wire.

[0043] The method for hydrophilic modification of diamond wire provided by the present invention can improve the liquid carrying capacity of diamond wire by hydrophilic modification of the surface of diamond wire, thereby improving the slice quality and reducing the slice cost, thereby avoiding the technical problems caused by using low surface tension wetting agents or increasing the concentration of wetting agents.

[0044] Among them, plasma treatment technology can efficiently modify the surface of diamond wire to make it hydrophilic. It stimulates the effective components in the air to produce high-energy substances, such as charged particles, free radicals, surface atoms and molecules. These high-energy substances will play a role in corrosion, activation, cleaning, etc. on the surface of the material, thereby modifying the surface of the material and improving the hydrophilic properties, and it has good stability.

[0045] Specifically, the present invention performs hydrophilic modification on the surface of the diamond wire, which can more effectively improve the liquid carrying capacity of the diamond wire, and more cutting liquid components can be retained near the surface of the diamond wire, thereby improving the quality of the slices. In addition, the hydrophilic modification of the surface of the diamond wire by the present invention will not affect the foam properties of the cutting liquid, and can avoid the negative impact of foam on the liquid carrying. The method has a lower cost for hydrophilic modification of the surface of the diamond wire, and does not require the use of a more expensive wetting agent. In addition, the hydrophilic modification of the surface of the diamond wire can improve the liquid carrying capacity of the steel wire, thereby reducing the amount of cutting liquid used and reducing the cost of using the cutting liquid.

[0046] Therefore, the method for hydrophilic modification of diamond wire provided by the present invention solves the shortcomings of the prior art of improving the liquid carrying capacity of diamond wire by reducing the surface tension of cutting fluid, such as excessive foam, high cost, and high lower limit of surface tension.

[0047] In some specific embodiments, the temperature of the outer flame of the plasma treatment flame is 50-60°C, including but not limited to any point value of 50°C, 51°C, 52°C, 53°C, 54°C, 55°C, 56°C, 57°C, 58°C, 59°C, 60°C or a range value between any two of them.

[0048] In some specific embodiments, the distance between the outer flame of the plasma treatment flame and the diamond wire is 0.01-0.05 cm, including but not limited to any point value of 0.01 cm, 0.02 cm, 0.03 cm, 0.04 cm, 0.05 cm or a range value between any two of them.

[0049] In some specific embodiments, the flame diameter of the plasma treatment is 0.5-1.5 cm, including but not limited to any point value of 0.5 cm, 0.6 cm, 0.8 cm, 1 cm, 1.1 cm, 1.3 cm, 1.5 cm or a range value between any two of them.

[0050] In some specific embodiments, the working pressure of the plasma treatment is normal pressure.

[0051] In some specific embodiments, the process gas for the plasma treatment includes oxygen and / or air.

[0052] In some specific implementations, the flow rate of the processing gas for the plasma treatment is 10 to 26 sccm.

[0053] In some specific implementations, the plasma treatment time (or treatment speed) is 0.05 to 0.10 seconds per meter.

[0054] In some specific embodiments, the power of the plasma treatment is 500-1000 W, including but not limited to any one of 500 W, 600 W, 700 W, 800 W, 900 W, and 1000 W, or a range between any two of them.

[0055] In some specific embodiments, the discharge frequency of the plasma treatment is 35-45 KHz, for example 40 KHz.

[0056] In some specific embodiments, the equipment used for the plasma treatment includes a plasma spray gun, which has the advantages of easy operation, high efficiency, wide application range and stable process.

[0057] In some specific embodiments, the power of the plasma treatment is 800-1000W, including but not limited to any one of 800W, 850W, 900W, 950W, 1000W or a range between any two of them.

[0058] The use of the above plasma treatment parameters can improve the hydrophilic modification effect on the diamond wire and improve production efficiency.

[0059] In some specific implementations, the diamond wire includes a busbar and a nickel coating disposed on the surface of the busbar. The plasma treatment is mainly to modify the nickel coating.

[0060] In a second aspect, the present invention provides a device for hydrophilic modification of diamond wires, which is also a silicon wafer cutting manufacturing device, and is applicable to the above-mentioned method for hydrophilic modification of diamond wires. Figure 1 It is a schematic structural diagram of a device for hydrophilic modification of diamond wires, wherein the device for hydrophilic modification of diamond wires comprises a pay-off wheel 1, a first guide wheel 2, a second guide wheel 3, a cutting chamber 4 and a take-up chamber 5 which are arranged in sequence.

[0061] The pay-off wheel 1 is used to release the rewound diamond wire, and the first guide wheel 2 moves along with the routing of the diamond wire on the pay-off wheel 1. Therefore, it is not suitable to add the plasma treatment device 6 in this section.

[0062] The second guide wheel 3 is fixedly arranged, and the second guide wheel 3 is used to guide the diamond wire into the cutting chamber 4 for wiring. Therefore, the plasma processing device 6 is fixed at the bottom wiring position of the second guide wheel 3.

[0063] In some specific implementations, the second guide wheel 3 is fixedly disposed obliquely above the first guide wheel 2 .

[0064] like Figure 1 As shown, a plasma treatment device 6 is provided below the second guide wheel 3 , and the plasma treatment device 6 is used to perform plasma surface treatment on the diamond wire introduced into the second guide wheel 3 .

[0065] In some specific embodiments, the plasma processing equipment 6 is arranged between the introduction end of the second guide wheel 3 (i.e., the end for introducing the diamond wire) and the lead-out end of the first guide wheel 2 (i.e., the end for leading out the diamond wire), and the plasma processing equipment 6 is close to the second guide wheel 3 (away from the first guide wheel 2).

[0066] The cutting chamber 4 is used for wiring cutting, that is, cutting to obtain silicon wafers.

[0067] The plasma treatment equipment 6 is combined with a silicon wafer cutting machine, and the hydrophilic treated diamond wire enters the cutting chamber 4 through the second guide wheel 3 for wiring cutting, which can produce high-quality silicon wafers and reduce production costs.

[0068] The wire taking-up bin 5 is used for taking up the wire, that is, for taking up the diamond wire that has been cut after being hydrophilically modified.

[0069] The device for hydrophilic modification of diamond wire provided by the invention can realize hydrophilic modification of diamond wire, has low cost, high efficiency and is easy to realize.

[0070] Moreover, the device has a simple structure and is easy to be popularized and used.

[0071] Specifically, the present invention introduces and applies the plasma processing device 6 into the silicon wafer cutting manufacturing process, which can improve the diamond wire's ability to carry cutting fluid.

[0072] In some specific embodiments, the plasma processing device 6 includes a plasma spray gun.

[0073] The plasma spray gun is connected to a radio frequency power supply device. When working, the power supply device will generate electromagnetic oscillations to excite the inhaled etching gas into plasma, which is then discharged through the plasma spray gun.

[0074] The plasma spray gun has the advantages of easy operation, high efficiency, wide application range, and stable process.

[0075] In some specific embodiments, the plasma spray gun comprises a direct-injection plasma spray gun.

[0076] The direct-injection plasma spray gun has the advantages of fast modification speed, good effect, high efficiency, and easy operation, which can improve production efficiency.

[0077] In some specific embodiments, the wire running speed of the cutting machine of the cutting chamber 4 is 10-20 m / s, including but not limited to any point value of 10 m / s, 11 m / s, 12 m / s, 13 m / s, 14 m / s, 15 m / s, 16 m / s, 17 m / s, 18 m / s, 19 m / s, and 20 m / s or any range value between two of them. Therefore, the rate of plasma treatment of diamond wire is 0.05 s / m to 0.10 s / m. To ensure the effect of the treated diamond wire, the power should be set to 800W or more.

[0078] In a third aspect, the present invention provides the use of the above-mentioned method for hydrophilic modification of diamond wire or the above-mentioned device for hydrophilic modification of diamond wire in cutting silicon wafers.

[0079] The present invention applies plasma processing technology and plasma processing equipment 6 to the silicon wafer cutting manufacturing process, which can perform hydrophilic modification on the surface of the diamond wire and improve the diamond wire's ability to carry cutting fluid.

[0080] The embodiments of the present invention will be described in detail below in conjunction with the examples, but it will be appreciated by those skilled in the art that the following examples are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. If no specific conditions are specified in the examples, the conditions are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be obtained commercially.

[0081] Example 1

[0082] The method for hydrophilic modification of diamond wire provided in this embodiment comprises the following steps: taking a diamond wire having a nickel coating on the surface and a tungsten wire as a busbar, and subjecting it to plasma treatment using a direct-injection plasma spray gun to obtain a modified diamond wire. The flame diameter of the direct-injection plasma spray gun is 1.5 cm, the distance between the outer flame of the flame and the diamond wire is 0.01 cm, the power of the direct-injection plasma spray gun is 1000 W, the discharge frequency is 40 KHz, the working pressure is normal pressure, the temperature of the outer flame of the flame is 60° C., the processing gas of the direct-injection plasma spray gun is oxygen, the flow rate is 26 sccm, and the processing time of the direct-injection plasma spray gun is 0.10 seconds / meter.

[0083] Example 2

[0084] The method for hydrophilic modification of diamond wire provided in this embodiment comprises the following steps: taking the same diamond wire as in embodiment 1, and subjecting it to plasma treatment using a direct-injection plasma spray gun to obtain a modified diamond wire. The flame diameter of the direct-injection plasma spray gun is 1.0 cm, the distance between the outer flame of the flame and the diamond wire is 0.01 cm, the power of the direct-injection plasma spray gun is 900 W, the discharge frequency is 40 KHz, the working pressure is normal pressure, the temperature of the outer flame of the flame is 55° C., the processing gas of the direct-injection plasma spray gun is oxygen, the flow rate is 26 sccm, and the processing time of the direct-injection plasma spray gun is 0.10 sec / m.

[0085] Example 3

[0086] The method for hydrophilic modification of diamond wire provided in this embodiment comprises the following steps: taking the same diamond wire as in embodiment 1, and subjecting it to plasma treatment using a direct-injection plasma spray gun to obtain a modified diamond wire. The flame diameter of the direct-injection plasma spray gun is 0.5 cm, the distance between the outer flame of the flame and the diamond wire is 0.01 cm, the power of the direct-injection plasma spray gun is 800 W, the discharge frequency is 40 KHz, the working pressure is normal pressure, the temperature of the outer flame of the flame is 50° C., the processing gas of the direct-injection plasma spray gun is oxygen, the flow rate is 26 sccm, and the processing time of the direct-injection plasma spray gun is 0.10 sec / m.

[0087] Example 4

[0088] The method for hydrophilic modification of diamond wire provided in this embodiment is basically the same as that in embodiment 1, except that the diamond wire is different. In this embodiment, the diamond wire to be treated is a diamond wire having a nickel coating on the surface and a tungsten wire as the mother wire.

[0089] Example 5

[0090] The method for hydrophilic modification of diamond wire provided in this embodiment is basically the same as that in embodiment 1, except that the processing time of the direct-injection plasma spray gun is 0.05 seconds / meter.

[0091] Example 6

[0092] The method for hydrophilic modification of diamond wire provided in this embodiment is basically the same as that in embodiment 1, except that the distance between the outer flame of the flame and the diamond wire is 0.05 cm.

[0093] Example 7

[0094] The method for hydrophilic modification of diamond wire provided in this embodiment is basically the same as that in Embodiment 1, except that the processing gas of the direct-injection plasma spray gun is air.

[0095] Example 8

[0096] The method for hydrophilic modification of diamond wire provided in this embodiment is basically the same as that in embodiment 1, except that the gas flow rate is 10 sccm.

[0097] Comparative Example 1

[0098] In this comparative example, no hydrophilic modification was performed (ie, no plasma treatment was performed), but the same diamond wire as in Example 1 was directly used.

[0099] Comparative Example 2

[0100] The method for hydrophilic modification of diamond wire provided in this comparative example is basically the same as that in Example 1, except that the distance between the outer flame of the flame and the diamond wire is 0.10 cm.

[0101] Comparative Example 3

[0102] The method for hydrophilic modification of diamond wire provided in this comparative example is basically the same as that in Example 1, except that the power of the direct-injection plasma spray gun is 500 W and the flame diameter is 0.3 cm.

[0103] Comparative Example 4

[0104] The method for hydrophilic modification of diamond wire provided in this comparative example is basically the same as that in Example 1, except that the processing time of the direct-injection plasma spray gun is 0.03 seconds / meter.

[0105] Comparative Example 5

[0106] The method for hydrophilic modification of diamond wire provided in this comparative example is basically the same as that in Example 1, except that the gas flow rate is 8 sccm.

[0107] Experimental example

[0108] The water drop contact angles of the modified diamond wires after plasma treatment in each embodiment and each comparative example are shown in Table 1. The wire breakage rate and wire marks are shown in Table 1.

[0109] The test method of water drop contact angle refers to GBT 30693-2014. The wire breakage rate and wire mark data are obtained from the machine inspection data.

[0110] Table 1 Performance test results of modified diamond wire

[0111]

[0112]

[0113] It can be seen from Table 1 that the water drop contact angle of the modified diamond wire after plasma treatment in each embodiment is less than 50°, which means that the modified diamond wire obtained in each embodiment has good wettability to water, which can improve the liquid carrying capacity of the diamond wire, thereby improving the slicing quality and reducing the slicing cost.

[0114] In contrast, the water drop contact angle of the diamond wire in Comparative Example 1 that has not been treated with plasma is 131.18°, which is significantly higher than that of the embodiments.

[0115] The processing parameters of Comparative Examples 2 to 5 are too high or too low, resulting in an increase in the water drop contact angle of the modified diamond wire and a decrease in the wettability to water, that is, a decrease in the liquid carrying capacity of the diamond wire.

[0116] In addition, compared with Comparative Example 1, the wire breakage rate and wire marks of each embodiment are lower, which indicates that the plasma processing equipment 6 can effectively process the hydrophobic diamond wire into a hydrophilic diamond wire, and the surface hydrophilic diamond wire can effectively bring the cutting liquid into the cutting, thereby alleviating the problem of high wire breakage rate and wire marks caused by high-speed cutting wear.

[0117] Although the present invention has been illustrated and described with specific embodiments, it should be appreciated that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Those skilled in the art should understand that the technical solutions described in the above embodiments may be modified, or some or all of the technical features thereof may be replaced by equivalents without departing from the spirit and scope of the present invention. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention. Therefore, this means that all such replacements and modifications within the scope of the present invention are included in the appended claims.

Claims

1. A method for hydrophilic modification of diamond wire, characterized in that: The steps include: The surface of the diamond wire is treated with plasma to obtain a modified diamond wire with a water drop contact angle of ≤50°.

2. The method for hydrophilic modification of diamond wire according to claim 1, characterized in that: At least one of the following conditions is met: (1) The temperature of the outer flame of the plasma treatment flame is 50-60°C; (2) The distance between the outer flame of the plasma treatment flame and the diamond wire is 0.01 to 0.05 cm; (3) The flame diameter of the plasma treatment is 0.5 to 1.5 cm.

3. The method for hydrophilic modification of diamond wire according to claim 1, characterized in that: At least one of the following conditions is met: (1) The processing gas for the plasma treatment includes oxygen and / or air; (2) The gas flow rate of the plasma treatment is 10 to 26 sccm; (3) The plasma treatment time is 0.05 to 0.10 seconds per meter.

4. The method for hydrophilic modification of diamond wire according to claim 1, characterized in that: At least one of the following conditions is met: (1) The power of the plasma treatment is 500 to 1000 W; (2) The discharge frequency of the plasma treatment is 35 to 45 kHz; (3) The equipment used for the plasma treatment includes a plasma spray gun.

5. The method for hydrophilic modification of diamond wire according to claim 1, characterized in that: The power of the plasma treatment is 800-1000W.

6. A device for hydrophilic modification of diamond wire, characterized in that: The method for hydrophilic modification of diamond wire according to any one of claims 1 to 5, wherein the device for hydrophilic modification of diamond wire comprises a pay-off wheel, a first guide wheel, a second guide wheel, a cutting chamber and a take-up chamber which are arranged in sequence; Wherein, the pay-off wheel is used to release the rewound diamond wire, and the first guide wheel moves along with the routing of the diamond wire on the pay-off wheel; The second guide wheel is fixedly arranged, and the second guide wheel is used to guide the diamond wire into the cutting chamber for wiring; the cutting chamber is used for wiring cutting, and the wire collection chamber is used for wire collection; A plasma processing device is disposed below the second guide wheel, and the plasma processing device is used to perform plasma surface treatment on the diamond wire introduced into the second guide wheel.

7. The device for hydrophilic modification of diamond wire according to claim 6, characterized in that: The plasma processing equipment includes a plasma spray gun.

8. The device for hydrophilic modification of diamond wire according to claim 7, characterized in that: The plasma spray gun comprises a direct-injection plasma spray gun.

9. The device for hydrophilic modification of diamond wire according to claim 6, characterized in that: The linear running speed of the cutting machine of the cutting chamber is 10 to 20 m / s.

10. Use of the method for hydrophilic modification of diamond wire according to any one of claims 1 to 5 or the device for hydrophilic modification of diamond wire according to any one of claims 6 to 9 in cutting silicon wafers.

Images