Gallium Oxide Crystal Microscopic Defect and Doping Regulation System and Method

Abstract

The present invention discloses a system and method for regulating microdefects and doping in gallium oxide crystals, belonging to the technical field of gallium oxide crystal regulation and control. The method specifically includes: growing gallium oxide crystals using chemical vapor deposition or molecular beam epitaxy methods under specific temperature conditions to obtain gallium oxide crystals, performing mathematical modeling on the microdefects of the gallium oxide crystals, analyzing the microdefects in the gallium oxide crystals and conducting regulation, analyzing the doping concentration and distribution in the gallium oxide crystals, regulating the doping in the gallium oxide crystals, and verifying the optimization of the performance of the regulated gallium oxide crystals. Through growth control and subsequent processing techniques, the present invention effectively reduces microdefects such as dislocations and vacancies in gallium oxide crystals, realizes precise regulation of the microdefects and electrical properties of gallium oxide crystals, and can significantly improve the quality and performance based on gallium oxide.

Description

Technical Field

[0001] The present invention belongs to the technical field of gallium oxide crystal regulation and control, specifically a system and method for regulating microdefects and doping in gallium oxide crystals. Background Art

[0002] Gallium oxide (Ga2O3) is a semiconductor material with a wide bandgap (about 4.8 - 4.9 eV) and has attracted much attention due to its potential applications in high-power and high-frequency devices. However, various microdefects, such as dislocations, vacancies, clusters, etc., are easily formed during the growth of gallium oxide crystals, and these defects will significantly affect the electrical and optical properties of the material. In addition, common intrinsic defects in gallium oxide crystals, such as oxygen vacancies (V_O) and gallium vacancies (V_Ga), will cause changes in the conduction type and fluctuations in the carrier concentration. In order to improve the performance of gallium oxide crystals, doping is usually used to regulate their microdefect structure. However, traditional doping methods may introduce new defects or cannot effectively control the concentration and distribution of existing defects.

[0003] The growth of gallium oxide crystals usually adopts the melt growth method (such as the Bridgman method, the floating zone method) or the vapor growth method (such as chemical vapor deposition CVD, molecular beam epitaxy MBE). However, due to the high anisotropy and complex lattice structure of gallium oxide crystals, various microdefects are easily formed during the growth process. These defects include but are not limited to: dislocations, vacancies, and clusters.

[0004] There is a complex interaction between microdefects and dopants in gallium oxide crystals. Some doping elements may stabilize specific types of defects, while others may promote the generation of defects. For example, oxygen vacancies are the main source of n-type conduction in gallium oxide crystals, but they may also form complex defects with some dopants (such as gallium), thus changing the conduction type of the material.

[0005] Therefore, an accurate method for regulating microdefects and doping is needed. Summary of the Invention

[0006] Aiming at the deficiencies of the prior art, the present invention proposes a system and method for regulating microdefects and doping in gallium oxide crystals. By adjusting the thermodynamic conditions and chemical vapor environment during the crystal growth process, precise control of microdefects is achieved. At the same time, dynamic doping technology is adopted to optimize the spatial distribution of doping atoms, improving the electrical properties and stability of the crystal.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A method for regulating microdefects and doping in gallium oxide crystals, comprising:

[0009] Gallium oxide crystals are grown using chemical vapor deposition or molecular beam epitaxy methods under specific temperature conditions to obtain gallium oxide crystals;

[0010] Mathematical modeling is performed on the microdefects of the gallium oxide crystals, the microdefects in the gallium oxide crystals are analyzed, and regulation is carried out;

[0011] The doping concentration and distribution in the gallium oxide crystals are analyzed, and the doping in the gallium oxide crystals is regulated;

[0012] The optimization of the performance of the regulated gallium oxide crystals is verified.

[0013] Specifically, the mathematical modeling of the microdefects of the gallium oxide crystals, the analysis of the microdefects in the gallium oxide crystals, and the regulation include:

[0014] Calculate the defect density of the gallium oxide crystals, and the calculation formula is:

[0015] ,

[0016] where N d (T, P, F) represents the defect density of the gallium oxide crystals, T represents the growth temperature of the gallium oxide crystals, P represents the growth pressure of the gallium oxide crystals, V g represents the gas flow rate during the growth of the gallium oxide crystals, E a represents the activation energy, k B represents the Boltzmann constant, k and represents the proportionality constant, exp() represents the exponential function;

[0017] Establish a kinetic model for the formation of microdefects to describe the diffusion behavior of dopants in the crystal, and the specific formula is:

[0018] ,

[0019] where C(o, t) represents the dopant concentration at position point o at time t, and the coordinates of position point o are (x o , y o , z o ), D represents the diffusion coefficient of the dopant in the gallium oxide crystals, o represents the o position point in the gallium oxide crystals, t represents time, represents the partial derivative symbol;

[0020] The grown gallium oxide crystals are annealed, and by controlling the annealing temperature, time, and gas flow rate, the oxygen vacancies and grain boundary defects in the crystals are reduced, and the feedback regulation formula for the defect generation rate is:

[0021] ,

[0022] where Rd Indicates the feedback regulation of the defect generation rate, △T, △P, and △V g respectively represent the small adjustment amounts of temperature, pressure, and gas flow rate.

[0023] Specifically, the mathematical modeling of the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and performing regulation further include:

[0024] Calculating the defect density after repair, and the specific formula is:

[0025] ,

[0026] where N f represents the defect density of the gallium oxide crystal after repair, Q a represents the activation energy during the annealing process, t a represents the annealing time, T a represents the annealing temperature.

[0027] Specifically, the analysis of the doping concentration and distribution in the gallium oxide crystal, and the regulation of the doping in the gallium oxide crystal include:

[0028] Introducing electrons and holes by n-type doping and p-type doping respectively;

[0029] Performing dynamic regulation on the doping in the gallium oxide crystal, and the specific formula is:

[0030] ,

[0031] where represents the doping concentration in the gallium oxide crystal, C0 represents the peak doping concentration, (x0, y0, z0) represents the doping center position, represents the doping distribution width parameter.

[0032] Specifically, the verification of the optimization of the properties of the regulated gallium oxide crystal includes:

[0033] Evaluating the electrical properties of the regulated gallium oxide crystal through resistivity testing and Hall effect testing to ensure that it meets the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystal is:

[0034] ,

[0035] where represents the conductivity of the regulated gallium oxide crystal, q represents the electronic charge, n d represents the carrier concentration, represents the carrier mobility;

[0036] The crystal structure and the distribution of microdefects are characterized by using high-resolution transmission electron microscopy and X-ray diffraction.

[0037] Specifically, the specific temperature includes: a temperature range of 850K ~ to 1050K.

[0038] A gallium oxide crystal microdefect and doping regulation system for implementing the gallium oxide crystal microdefect and doping regulation method includes: a gallium oxide generation module, a defect regulation module, a doping regulation module, and an optimization verification module;

[0039] The gallium oxide generation module is used to grow gallium oxide crystals at a specific temperature condition by using chemical vapor deposition or molecular beam epitaxy method to obtain gallium oxide crystals;

[0040] The defect regulation module is used to perform mathematical modeling on the microdefects of gallium oxide crystals, analyze the microdefects in gallium oxide crystals, and perform regulation;

[0041] The doping regulation module is used to analyze the doping concentration and distribution in gallium oxide crystals and regulate the doping in gallium oxide crystals;

[0042] The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystals.

[0043] Specifically, the defect regulation module includes: a defect calculation unit, a defect analysis unit, and a defect processing unit;

[0044] The defect calculation unit is used to calculate the defect density of gallium oxide crystals;

[0045] The defect analysis unit is used to establish a kinetic model for the formation of microdefects and analyze the diffusion behavior of dopants in the crystal;

[0046] The defect processing unit is used to perform annealing treatment on the grown gallium oxide crystals, and by controlling the annealing temperature, time, and gas flow rate, reduce the oxygen vacancies and grain boundary defects in the crystals, and perform feedback regulation on the defect generation rate.

[0047] An electronic device includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the steps of the gallium oxide crystal microdefect and doping regulation method are implemented.

[0048] A computer-readable storage medium stores computer instructions, and when the computer instructions run, the steps of the gallium oxide crystal microdefect and doping regulation method are executed.

[0049] Compared with the prior art, the beneficial effects of the present invention are:

[0050] 1. The present invention provides a method for controlling microdefects and doping in gallium oxide crystals. Through growth control and subsequent processing techniques, microdefects such as dislocations and vacancies in gallium oxide crystals are effectively reduced, enabling precise control of the microdefects and electrical properties of gallium oxide crystals.

[0051] 2. The present invention provides a method for controlling microdefects and doping in gallium oxide crystals. By optimizing the doping process, uniform distribution of doping elements can be achieved, while the formation of unwanted defects is suppressed, thereby enhancing the doping efficiency and long-term stability of gallium oxide crystals.

[0052] 3. The present invention provides a method for controlling microdefects and doping in gallium oxide crystals, which can significantly improve the quality and performance of gallium oxide-based materials, such as higher switching frequencies, lower power consumption, and longer service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 is a flowchart of the method for controlling microdefects and doping in gallium oxide crystals provided by the present invention;

[0054] Figure 2 is a system architecture diagram of the method for controlling microdefects and doping in gallium oxide crystals provided by the present invention;

[0055] Figure 3 is a schematic diagram of an electronic device provided by the present invention;

[0056] Figure 4 is a schematic diagram of the structure of a computer-readable storage medium provided by the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0057] In order to make the technical means, creative features, achieved objectives, and functions of the present invention easy to understand, it should be noted that in the description of the present invention, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "No. 1", "No. 2", "No. 3" are only used for descriptive purposes and should not be construed as indicating or implying relative importance. The present invention will be further described below in conjunction with specific embodiments.

[0058] Example 1

[0059] Please refer to Figure 1 , an embodiment provided by the present invention: A method for controlling microdefects and doping in gallium oxide crystals, including the following specific steps:

[0060] Step S1: Grow gallium oxide crystals under high-temperature conditions using chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) methods to obtain high-quality gallium oxide crystals;

[0061] Control the growth temperature T within 850K ≤ T ≤ 1050K to ensure the integrity of the crystal. By adjusting the oxygen partial pressure pO2 in the atmosphere, control the oxygen defect concentration of the crystal. The control range of the oxygen partial pressure pO2 is 10 −6 Pa ≤ pO2 ≤ 10 −3 Pa;

[0062] For the chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) methods, the CVD method is a process of generating solid materials through chemical reactions in a gas phase environment. In this method, gaseous precursors decompose at high temperatures to produce the required materials that are deposited on the substrate, thereby forming high-quality thin films; the MBE method is a technique of depositing by directly spraying molecular or atomic beams on the substrate surface in an ultra-high vacuum environment. This method can precisely control the deposition rate and thickness, making the epitaxial layer have a high crystalline quality;

[0063] In this embodiment, the growth temperature has a direct impact on the crystal quality. Excessive temperature will lead to lattice mismatch and increased defects, while too low temperature may result in incomplete crystallization. Controlling the temperature within the range of 850K ≤ T ≤ 1050K can ensure the crystal grows under better conditions, reduce the formation of lattice defects, and thus ensure the integrity and uniformity of the crystal; oxygen defects are one of the main factors affecting the electrical properties of gallium oxide crystals. By controlling the oxygen partial pressure pO2, the oxygen defect concentration in the crystal can be precisely adjusted. Low oxygen partial pressure will lead to an increase in oxygen defects, resulting in n-type conductivity, while high oxygen partial pressure will reduce oxygen defects and may enhance the p-type conductivity of the crystal. By controlling pO2 within the range of 10 −6 Pa ≤ pO2 ≤ 10 −3 Pa, the conduction type and electrical properties of gallium oxide can be optimized to a certain extent;

[0064] Step S2: Conduct mathematical modeling on the micro-defects of gallium oxide crystals, analyze the micro-defects in gallium oxide crystals, and perform regulation;

[0065] The specific steps of step S2 are as follows:

[0066] Step S201: Calculate the defect density of gallium oxide crystals. The calculation formula is:

[0067] ,

[0068] where, N d(T, P, F) represents the defect density of gallium oxide crystals. T represents the growth temperature of gallium oxide crystals, that is, the temperature at which gallium oxide crystals form during chemical vapor deposition (CVD). Changes in temperature affect the nucleation and growth rate of crystals and further influence the generation of microdefects. High temperatures usually help reduce the formation of certain defects, but may also trigger other types of defects. P represents the growth pressure of gallium oxide crystals, that is, the gas pressure in the reaction chamber during crystal growth. Changes in pressure affect the fluidity of the gas and the concentration of reactants, thereby affecting crystal nucleation and defect formation. V g represents the gas flow rate during the growth of gallium oxide crystals, that is, the flow rate of reaction gases (such as oxygen, hydrogen, etc.) during crystal growth, which affects the uniformity of gas supply and the growth rate of crystals. E a represents the activation energy, that is, the minimum energy required for the formation of microdefects. The magnitude of the activation energy determines the ease of defect generation under specific conditions. A higher activation energy means that defects are more difficult to form. k B represents the Boltzmann constant, k and represents the proportionality constant, a constant obtained by fitting data in the experiment, used to adjust the formula to conform to experimental observations. exp() represents the exponential function;

[0069] The defect density of gallium oxide crystals is the number of microdefects present per unit volume in gallium oxide crystals under specific conditions (temperature, pressure, gas flow rate). Microdefects include dislocations, vacancies, impurity atoms, etc. These defects affect the electrical properties of the crystals;

[0070] The principle of the above formula: Based on the principles of thermodynamics and chemical reaction kinetics, it is used to describe the formation process of microdefects in gallium oxide crystals. According to the formula, the defect density N d (T, P, V g ) decreases with the increase of the growth temperature T because a higher temperature helps the atoms to arrange more orderly, thus reducing the formation of defects. At the same time, a higher pressure P and a lower gas flow rate V g will result in a higher defect density, indicating that under high-pressure and low-flow conditions, reactants may be more likely to deposit on the crystal surface to form defects. This formula combines multiple key parameters in the chemical vapor deposition process to describe the formation mechanism and density distribution of microdefects. By adjusting these parameters, the crystal growth conditions can be optimized, the defect density can be reduced, and thus the quality and electrical properties of gallium oxide crystals can be improved;

[0071] Step S202: Establish a kinetic model for the formation of microdefects and analyze the diffusion behavior of dopants in the crystal. The specific formula is:

[0072] ,

[0073] Among them, C(o,t) represents the dopant concentration at position point o at time t, and the coordinates of position point o are (x o , y o , z o ), which is used to describe the change of the dopant distribution in the gallium oxide crystal with time and position. D represents the diffusion coefficient of the dopant in the gallium oxide crystal, o represents the position point o in the gallium oxide crystal, t represents time, represents the symbol for partial derivative;

[0074] Principle of the kinetic model formula for microdefect formation: This formula indicates that the rate of change of the dopant concentration (the time derivative on the left side) is equal to the diffusion coefficient multiplied by the second spatial derivative of the concentration (the right side). This shows that the diffusion of the dopant in the crystal is driven by the concentration gradient. The diffusion coefficient D reflects the ability of the dopant to diffuse in the crystal. A larger D value indicates that the dopant diffuses more easily. The higher the temperature, the larger D is because the thermal motion of the dopant is more intense and the diffusion is faster. The gradient concentration represents the non-uniformity of the dopant distribution in space, driving the dopant to diffuse from the region of high concentration to the region of low concentration. This model is used to predict the diffusion behavior of the dopant during the growth of the gallium oxide crystal, thereby optimizing the dopant concentration distribution, reducing microdefects, and improving the electrical properties of the crystal;

[0075] Step S203: Anneal the grown gallium oxide crystal. By controlling the annealing temperature, time, and gas flow rate, reduce the oxygen vacancies and grain boundary defects in the crystal. The specific formula for the feedback regulation of the defect generation rate is:

[0076] ,

[0077] Among them, R d represents the feedback regulation of the defect generation rate, and △T, △P, and △V g respectively represent the small adjustment amounts of temperature, pressure, and gas flow rate;

[0078] Step S204: Calculate the defect density after repair. The specific formula is:

[0079] ,

[0080] Among them, N f represents the defect density of the gallium oxide crystal after repair, Q a represents the activation energy during the annealing process. The activation energy is usually related to the migration and rearrangement of atoms or ions in the crystal. The higher the activation energy, the slower the defect repair speed. Therefore, the repair efficiency is proportional to temperature and time. t a represents the annealing time, and T aDenote the annealing temperature. The higher the temperature, the greater the kinetic energy obtained by the atoms or ions in the crystal, resulting in a higher defect repair efficiency, which causes the defect density to decrease at a faster rate.

[0081] Principle of the defect repair formula: Based on thermodynamics and kinetics principles, it describes the exponential decrease of the defect density with time and temperature during annealing. When the annealing temperature increases, the term becomes smaller, leading to becoming larger, thereby causing N f to decrease significantly, indicating that high-temperature annealing is more effective in reducing the defect density. The activation energy Q a reflects the difficulty of defect repair. For defect types with high activation energy, sufficiently high temperature and long time must be provided to significantly reduce these defects.

[0082] Step S3: Analyze the doping concentration and distribution in the gallium oxide crystal and regulate the doping in the gallium oxide crystal;

[0083] The specific steps of Step S3 are as follows:

[0084] Step S301: Introduce electrons and holes by using n-type doping and p-type doping respectively;

[0085] n-type dopant: Select elements with low ionization energy, such as tin (Sn) or silicon (Si), which can effectively release free electrons in the gallium oxide crystal and increase the electron concentration n;

[0086] p-type dopant: Select elements suitable for compensating the electron concentration and increasing the hole concentration, such as magnesium (Mg) or zinc (Zn). The incorporation of these elements can form acceptor energy levels and increase the hole concentration p;

[0087] Step S302: Dynamically regulate the doping in the gallium oxide crystal. The specific formula is:

[0088] ,

[0089] where represents the doping concentration in the gallium oxide crystal, that is, the doping atom concentration at a specific position (x, y, z) in the crystal. The doping concentration describes the spatial distribution of the doping element in the crystal and is an important factor affecting the electrical properties of the material. C0 represents the peak doping concentration, which represents the maximum concentration of the doping element at a certain position in the crystal. This parameter is usually related to the supply amount of the doping source and doping conditions (such as temperature, air pressure, etc.) and is an important parameter determining the doping effect in the crystal. (x0, y0, z0) represents the doping center position, which is usually determined by the configuration of the doping device and process conditions. Represents the doping distribution width parameter, that is, the extent of the spatial distribution of doping atoms. The larger the value, the wider the doping concentration distribution; conversely, it is concentrated in a narrow area. This parameter is related to the diffusion mechanism during crystal growth and the spreading characteristics of the doping source.

[0090] In this example, the dynamic regulation formula is based on the Gaussian distribution model (or normal distribution), which describes the spatial distribution characteristics of doping atoms in the crystal. The characteristic of the Gaussian distribution is that the doping concentration reaches the maximum value at the center position and then gradually decreases with the increase of distance. The parameter controls the extent of the concentration distribution, while the parameter C0 controls the peak value of the concentration.

[0091] The doping center position (x0, y0, z0) is usually determined by the physical structure of the actual doping device and the doping conditions, while the distribution width is related to factors such as the diffusion rate and the temperature gradient of crystal growth. By adjusting these parameters, the distribution of doping atoms in the crystal can be precisely controlled, thereby realizing the regulation of material properties. By reasonably selecting the position (x0, y0, z0) of the doping source and adjusting the distribution width it is possible to achieve precise doping of specific regions in the crystal, improving the electrical properties, conductivity, optical characteristics, etc. of the material. For example, in semiconductor devices, by controlling the doping concentration distribution, key structures such as pn junctions and Schottky junctions can be formed.

[0092] This formula describes the spatial distribution of doping atoms in the crystal and realizes the optimization of material properties through parameter control. This method is different from the traditional uniform doping method and provides a more precise doping control means.

[0093] Step S4: Verify the optimization of the properties of the regulated gallium oxide crystal.

[0094] The specific steps of step S4 are as follows:

[0095] Step S401: Through resistivity testing and Hall effect testing, evaluate the electrical properties of the regulated gallium oxide crystal to ensure that it meets the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystal is:

[0096] ,

[0097] Among them, represents the conductivity of the regulated gallium oxide crystal. Conductivity represents the strength of the conductive ability of the gallium oxide crystal under the action of an electric field, with the unit of Siemens per meter (S / m). The higher the conductivity, the better the conductivity of the gallium oxide crystal. It is an important electrical parameter of the gallium oxide crystal and directly affects the performance of the gallium oxide crystal in electronic devices. q represents the electronic charge, and nd Denotes the carrier concentration. In semiconductor materials, carriers can be electrons or holes. The higher the carrier concentration, the better the conductivity of the gallium oxide crystal. By doping, the carrier concentration of the semiconductor can be controlled, thereby adjusting its conductivity. Denotes the carrier mobility, which is a parameter describing the movement rate of carriers under the action of an electric field. The unit is square meters per volt second (m² / V·s). It reflects the ease with which carriers move in the gallium oxide crystal. The higher the mobility, the faster the carriers move under the electric field, thereby improving the conductivity of the material. The mobility is affected by factors such as the crystal structure, impurity concentration, and temperature of the gallium oxide crystal.

[0098] In this embodiment, this formula reflects the relationship between conductivity and the carrier concentration and mobility in the material, and is a basic formula in solid state physics and semiconductor physics. It shows that the conductivity of the material is jointly determined by the number of carriers (carrier concentration) and the movement ability of carriers under the action of an electric field (mobility).

[0099] Carrier concentration n d Function: In a semiconductor, the carrier concentration n d is determined by the inherent properties and doping conditions of the gallium oxide crystal. By introducing doping atoms, the number of free electrons or holes can be increased, thereby improving the conductivity of the gallium oxide crystal. At a given carrier mobility, the higher the carrier concentration, the higher the conductivity of the gallium oxide crystal; Carrier mobility Function: Mobility describes the rate at which carriers move in an electric field. High mobility means that carriers can respond to the electric field faster, thereby enhancing the conductivity of the gallium oxide crystal. The mobility is affected by factors such as the lattice structure, defects, impurities, and temperature of the gallium oxide crystal; Overall relationship: Conductivity is the product of the carrier concentration n d and the carrier mobility , multiplied by a constant q (electronic charge). This indicates that the conductivity of the material can be improved by increasing the number of carriers or increasing the carrier mobility. This formula is crucial in the design and optimization of semiconductor materials and devices. For example, when selecting the doping concentration and type, it is necessary to balance the carrier concentration and mobility to achieve the best conductivity.

[0100] Step S402: Use high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) to characterize the crystal structure and the distribution of microdefects.

[0101] Embodiment 2

[0102] Please refer to Figure 2, Another embodiment provided by the present invention: a gallium oxide crystal microdefect and doping regulation system, comprising: a gallium oxide generation module, a defect regulation module, a doping regulation module, and an optimization verification module;

[0103] The gallium oxide generation module is used to grow gallium oxide crystals under specific temperature conditions by chemical vapor deposition or molecular beam epitaxy methods to obtain gallium oxide crystals;

[0104] The defect regulation module is used to perform mathematical modeling on the microdefects of gallium oxide crystals, analyze the microdefects in gallium oxide crystals, and perform regulation;

[0105] The doping regulation module is used to analyze the doping concentration and distribution in gallium oxide crystals and regulate the doping in gallium oxide crystals;

[0106] The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystals.

[0107] The defect regulation module includes: a defect calculation unit, a defect analysis unit, and a defect processing unit;

[0108] The defect calculation unit is used to calculate the defect density of gallium oxide crystals;

[0109] The defect analysis unit is used to establish a kinetic model for the formation of microdefects and analyze the diffusion behavior of dopants in the crystal;

[0110] The defect processing unit is used to perform annealing treatment on the grown gallium oxide crystals. By controlling the annealing temperature, time, and gas flow rate, the oxygen vacancies and grain boundary defects in the crystals are reduced, and feedback regulation is performed on the defect generation rate.

[0111] Embodiment 3

[0112] Figure 3 is a schematic structural diagram of an electronic device provided by an embodiment of the present application. As Figure 3 shown, according to another aspect of the present application, an electronic device 500 is further provided. The electronic device 500 may include one or more processors and one or more memories. Among them, computer-readable code is stored in the memory, and when the computer-readable code is run by one or more processors, it can execute the method for regulating microdefects and doping of gallium oxide crystals.

[0113] The method or system according to the embodiment of the present application can also be implemented by means of Figure 3 the architecture of the electronic device shown. As Figure 3As shown, the electronic device 500 may include a bus 501, one or more CPUs 502, a ROM 503, a RAM 504, a communication port 505 connected to a network, an input / output component 506, a hard disk 507, etc. The storage devices in the electronic device 500, such as the ROM 503 or the hard disk 507, may store the method for regulating microscopic defects and doping of gallium oxide crystals provided in this application. The method for regulating microscopic defects and doping of gallium oxide crystals may, for example, include: growing gallium oxide crystals at a specific temperature condition using chemical vapor deposition or molecular beam epitaxy methods to obtain gallium oxide crystals, performing mathematical modeling on the microscopic defects of the gallium oxide crystals, analyzing the microscopic defects in the gallium oxide crystals, and performing regulation, analyzing the doping concentration and distribution in the gallium oxide crystals, regulating the doping in the gallium oxide crystals, and verifying the optimization of the performance of the regulated gallium oxide crystals. Further, the electronic device 500 may also include a user interface 508. Of course, Figure 3 The architecture shown is only exemplary. When implementing different devices, one or more components in the electronic device shown may be omitted according to actual needs. Figure 3 shown

[0114] Example 4

[0115] Figure 4 is a schematic diagram of the structure of a computer-readable storage medium provided by an embodiment of this application. As Figure 4 shown, it is a computer-readable storage medium 600 according to an embodiment of this application. Computer-readable instructions are stored on the computer-readable storage medium 600. When the computer-readable instructions are run by a processor, the method for regulating microscopic defects and doping of gallium oxide crystals according to the embodiment of this application described with reference to the above drawings can be executed. The storage medium 600 includes but is not limited to, for example, volatile memory and / or non-volatile memory. Volatile memory may, for example, include random access memory (RAM) and cache memory, etc. Non-volatile memory may, for example, include read-only memory (ROM), hard disk, flash memory, etc.

[0116] It should be understood that the methods, apparatuses, and devices of this application can be implemented in many ways. For example, the methods, apparatuses, and devices of this application can be implemented through software, hardware, firmware, or any combination of software, hardware, and firmware. The above order of the steps for the method is only for illustration. The steps of the method of this application are not limited to the above specific described order unless otherwise specifically stated. In addition, in some embodiments, this application can also be implemented as a program recorded in a recording medium, and these programs include machine-readable instructions for implementing the method according to this application. Therefore, this application also covers a recording medium storing a program for executing the method according to this application.

[0117] In addition, parts of the above technical solutions provided in the embodiments of the present application that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail to avoid excessive elaboration.

[0118] As described above in the specific embodiments, the purpose, technical solutions, and beneficial effects of the present invention have been further described in detail. It should be understood that the above are only specific embodiments of the present invention and are not used to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for controlling microscopic defects and doping of gallium oxide crystals, characterized in that: include: Growing gallium oxide crystals under specific temperature conditions using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; Mathematically model the microscopic defects of gallium oxide crystals, analyze the microscopic defects in gallium oxide crystals, and regulate them; Analyze the doping concentration and distribution in gallium oxide crystals, and regulate the doping in gallium oxide crystals; Verify the optimization of the performance of the regulated gallium oxide crystals; The method of mathematically modeling the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and regulating the microscopic defects includes: Calculate the defect density of gallium oxide crystals using the following formula: ， Among them, N d (T, P, F) represents the defect density of the gallium oxide crystal, T represents the growth temperature of the gallium oxide crystal, P represents the growth pressure of the gallium oxide crystal, V g represents the gas flow rate during the growth of gallium oxide crystals, E a represents the activation energy, k B represents the Boltzmann constant, k and represents the proportional constant, exp() represents the exponential function; A kinetic model for the formation of microscopic defects is established to analyze the diffusion behavior of dopants in the crystal. The specific formula is: ， Where C(o,t) represents the dopant concentration at point o at time t, and the coordinates of point o are (x o ,y o ,z o ), D represents the diffusion coefficient of the dopant in the gallium oxide crystal, o represents the position o in the gallium oxide crystal, t represents the time, Indicates the symbol for partial derivative; The grown gallium oxide crystals are annealed to reduce oxygen vacancies and grain boundary defects in the crystals by controlling the annealing temperature, time and gas flow rate. The specific formula for feedback control of the defect generation rate is: ， Among them, R d Denotes the feedback control of defect generation rate, △T, △P and △V g Respectively represent small adjustments of temperature, pressure and gas flow rate; Calculate the defect density after repair. The specific formula is: ， Among them, N f represents the defect density of the gallium oxide crystal after repair, Q a represents the activation energy during annealing, t a represents the annealing time, T a represents the annealing temperature; The analyzing the doping concentration and distribution in the gallium oxide crystal and regulating the doping in the gallium oxide crystal include: n-type doping and p-type doping are used to introduce electrons and holes respectively; Dynamically control the doping in gallium oxide crystals. The specific formula is: ， in, represents the doping concentration in the gallium oxide crystal, C0 represents the peak doping concentration, (x0, y0, z0) represents the doping center position, Represents the doping distribution width parameter.

2. The gallium oxide crystal micro defect and doping control method according to claim 1, characterized in that: The verification of the optimization of the performance of the regulated gallium oxide crystal includes: The electrical properties of the regulated gallium oxide crystals are evaluated through resistivity tests and Hall effect tests to ensure that they meet the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystals is: ； in, represents the conductivity of the regulated gallium oxide crystal, q represents the electron charge, and n d represents the carrier concentration, represents the carrier mobility; High-resolution transmission electron microscopy and X-ray diffraction were used to characterize the crystal structure and the distribution of microscopic defects.

3. The gallium oxide crystal micro defect and doping control method according to claim 2, characterized in that: The specific temperature includes: the temperature range is 850K ~ 1050K.

4. A gallium oxide crystal micro defect and doping control system, used to implement the gallium oxide crystal micro defect and doping control method according to any one of claims 1 to 3, characterized in that: include: Gallium oxide generation module, defect control module, doping control module and optimization verification module; The gallium oxide production module is used to grow gallium oxide crystals under specific temperature conditions by using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; The defect control module is used to mathematically model the microscopic defects of the gallium oxide crystal, analyze the microscopic defects in the gallium oxide crystal, and control them; The doping control module is used to analyze the doping concentration and distribution in the gallium oxide crystal, and to control the doping in the gallium oxide crystal; The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystal.

5. The gallium oxide crystal micro defect and doping control system according to claim 4, characterized in that: The defect control module includes: a defect calculation unit, a defect analysis unit and a defect processing unit; The defect calculation unit is used to calculate the defect density of the gallium oxide crystal; The defect analysis unit is used to establish a kinetic model for the formation of microscopic defects and analyze the diffusion behavior of dopants in the crystal; The defect treatment unit is used to perform annealing treatment on the grown gallium oxide crystal, reduce oxygen vacancies and grain boundary defects in the crystal by controlling the annealing temperature, time and gas flow rate, and perform feedback control on the defect generation rate.

6. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method for controlling microscopic defects and doping of gallium oxide crystals according to any one of claims 1 to 3 are implemented.

7. A computer-readable storage medium, characterized in that: Computer instructions are stored thereon, and when the computer instructions are executed by a processor, the steps of the method for controlling microscopic defects and doping of gallium oxide crystals according to any one of claims 1 to 6 are executed.

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