Power diode wafer detection device, detection method thereof and test machine

Abstract

The invention relates to a power diode wafer detection device, a detection method thereof and a test machine, the power diode wafer detection device comprises a probe card which is coupled with a wafer in a detection state, a power diode is formed on the wafer, and the probe card comprises a test probe group which is used for transmitting a test signal for the power diode; the positioning probe group and the test probe group move in parallel, the positioning probe group comprises a plurality of positioning probes, and at least a part of the positioning probes move to a preset positioning area of the power diode on the wafer in the detection state; and the micro-processing unit is coupled with the wafer and is used for detecting a pattern formed by the positioning probes in the positioning area. The embodiment of the invention is beneficial to improving the detection efficiency of the power diode.

Description

Technical Field

[0001] The present invention relates to the technical field of power diode detection, and in particular to a power diode wafer detection device and a detection method thereof, and a testing machine. Background Art

[0002] Power diodes are indispensable semiconductor devices in the field of power electronics. They are specially designed to operate under high voltage and high current environments. These devices usually adopt a PN structure with high withstand voltage and low on-resistance to provide efficient power conversion and control. In devices such as power adapters, chargers, inverters and frequency converters, power diodes play a vital role. They can convert AC to DC or provide stable voltage and current in the circuit. Therefore, power diodes must be tested before leaving the factory.

[0003] However, the existing power diode wafer detection device has the problem of reduced detection efficiency during the detection process. Therefore, how to provide a technical solution to improve and optimize the power diode wafer detection device to improve the power diode detection efficiency has become an urgent problem to be solved by those skilled in the art. Summary of the invention

[0004] The technical problem solved by the present invention is to detect power diodes by providing a power diode wafer detection device and a detection method thereof, and a test machine, so as to improve the detection efficiency.

[0005] In order to solve the above problems, an embodiment of the present invention provides a power diode wafer detection device, including: a probe card, coupled to a wafer in a detection state, a power diode being formed on the wafer, the probe card including: a test probe group, used to transmit a test signal to the power diode; a positioning probe group, moving in parallel with the test probe group, the positioning probe group including a plurality of positioning probes, at least a part of the positioning probes move to a preset positioning area of ​​the power diode on the wafer in the detection state; a microprocessing unit, coupled to the wafer, and used to detect a pattern composed of the positioning probes in the positioning area.

[0006] Optionally, the test probe group includes a plurality of test probes;

[0007] Part of the positioning probes in the positioning probe group reuses the test probes.

[0008] Optionally, the power diode includes a preset test area, and projections of the test probes in the test probe group on the wafer are located within the test area of ​​the power diode.

[0009] Optionally, the number of the at least part of the positioning probes is 3 or more;

[0010] Any at least three positioning probes among the plurality of positioning probes form a graph, and the shapes and / or areas of the graphs are different;

[0011] Any at least three positioning probes among the plurality of positioning probes form a graph, and the shape and / or area of ​​each graph are different from the shape and / or area of ​​the graph formed by any at least three testing probes among the plurality of testing probes.

[0012] Optionally, the composition graphics of the test probes include: one or more of triangles, squares, trapezoids, rhombuses, and polygons, and the composition graphics of at least a portion of the positioning probes include: one or more of triangles, squares, trapezoids, rhombuses, and polygons.

[0013] Optionally, the power diode wafer detection device further includes:

[0014] An optical sensor, used for emitting a light beam to the wafer and forming a light spot on the wafer, wherein each light beam forms a light spot, the number of the light spots is the same as the number of the at least part of the positioning probes, and the light spots correspond to the positioning probes one by one;

[0015] The microprocessor is coupled to the optical sensor and is used to send the number and position of the light spots to be formed to the optical sensor, and to detect whether the pattern and position formed by the light spots are consistent with the pattern and position formed by at least a part of the positioning probe.

[0016] Optionally, the light spot formed by the light beam emitted by the optical sensor onto the wafer is located inside the power diode, so that the positioning probe group and the light spot are aligned inside the power diode.

[0017] Optionally, the light spot formed by the light beam emitted by the optical sensor onto the wafer is located outside the power diode, so that the alignment between the positioning probe group and the light spot is located outside the power diode.

[0018] Optionally, the power diode wafer detection device further includes:

[0019] A signal unit, located on the probe card, coupled to the test probe set, and used to receive a test signal from the microprocessor unit and transmit it to the test probe set;

[0020] The display unit is used to display the image after the positioning probe group and the power diode are positioned.

[0021] A testing machine, comprising: a power diode wafer detection device as described in any one of the above items;

[0022] Wherein, the probe card is located on the test machine and is detachably connected to the test machine.

[0023] Accordingly, the present invention provides a detection method, which is applied to the power diode wafer detection device described in any one of the above, and the detection method comprises: moving the wafer and / or the probe card so that at least a part of the positioning probes moves to a preset positioning area of ​​the power diode on the wafer in the detection state;

[0024] The microprocessing unit detects a pattern formed by the positioning probes in the positioning area.

[0025] Optionally, the power diode wafer detection device further includes a light sensor;

[0026] The method further comprises:

[0027] The microprocessing unit sends the number and position of light spots to be formed to the light sensor;

[0028] Using a light sensor to emit a light beam to the wafer and form a light spot on the wafer, each light beam forms a light spot, the number of the light spots is the same as the number of the at least part of the positioning probes, and the light spots correspond to the positioning probes one by one;

[0029] The microprocessing unit detects whether the pattern and position formed by the light spot are consistent with the pattern and position formed by at least a part of the positioning probe.

[0030] Optionally, the detection method further includes:

[0031] In response to the pattern and position formed by the light spot being inconsistent with the pattern and position formed by at least a portion of the positioning probes, a warning message is issued.

[0032] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0033] First, by separately arranging the positioning probe and the test probe on the probe card, the probability of pattern recognition errors can be reduced in the process of identifying the pattern composed of the positioning probes, thereby improving the detection efficiency. Second, the positioning probe group includes a plurality of positioning probes, and the plurality of positioning probes can form a variety of different patterns, that is, the positioning probe composition pattern has diversity. In the process of identifying the pattern composed of the positioning probes, the probability of pattern recognition errors can be reduced, thereby improving the detection efficiency. Third, at least a portion of the positioning probes in the detection state are moved to the preset positioning area of ​​the power diode on the wafer, that is, a portion of the positioning probes are used for positioning. Compared with the prior art that uses one positioning probe for positioning, using a portion of the positioning probes for positioning can reduce the force acting on each positioning probe, delay the wear of the positioning probe, and increase the service life of the positioning probe. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0035] Figure 1 It is a partial schematic diagram of a power diode wafer inspection device;

[0036] Figure 2 It is a flow chart of a detection method corresponding to a power diode wafer detection device;

[0037] Figures 3 to 8 It is a structural schematic diagram of a power diode wafer detection device according to an embodiment of the present invention;

[0038] Fig. 9 It is a flow chart of a detection method corresponding to a power diode wafer detection device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0040] The existing power diode wafer inspection device has the problem of reduced inspection efficiency during the inspection process. Figure 1Taking a power diode that requires 5 test probes for detection as an example, the reasons for the reduced detection efficiency are analyzed.

[0041] like Figure 1 Shown is a partial schematic diagram of a power diode wafer detection device.

[0042] The power diode wafer detection device includes: a test board 10 , a test probe group located on the test board 10 , the test probe group including test probes 11 a to 11 e ; a wafer 20 , and a power diode 21 located on the wafer 20 .

[0043] like Figure 2 As shown, the testing method for the power diode 21 on the wafer 20 includes:

[0044] Step S1: Selecting an alignment probe.

[0045] Among the test probes, one test probe is randomly selected as a positioning probe to position the test probe on the test board 10 onto the power diode 21 to detect the power diode 21. Figure 1 As shown, for example, the test probe 11 a located on the test board 10 is selected as the positioning probe 11 a .

[0046] Step S2: Positioning the positioning probe on the power diode.

[0047] The positioning probe 11 a is positioned at a position A on the power diode 21 so that the test probe is positioned on the power diode for testing.

[0048] In the actual step S1 of testing the power diode, a test probe is arbitrarily selected as a positioning probe, such as Figure 1 As shown, the test probe 11a is used as a positioning probe to align with position A on the power diode, and there is the following problem: all the test probes 11a to 11e on the test board 10 have the same shape and size, and it is not easy to distinguish which test probe is used as the positioning probe. During the positioning process, for example, there is a possibility of selecting test probe 11c as the positioning probe, that is, aligning test probe 11c with position A on the power diode, causing test probes 11a and 11b to be offset outside the power diode 21, so that the detection signal transmitted to the power diode through the test probe is weakened, affecting the detection effect of the power diode and reducing the detection efficiency.

[0049] In order to solve the technical problem, an embodiment of the present invention provides a power diode wafer detection device, which includes: a probe card coupled to a wafer in a detection state, on which a power diode is formed, and the probe card includes: a test probe group for transmitting a test signal to the power diode; a positioning probe group moving in parallel with the test probe group, the positioning probe group including a plurality of positioning probes, and in the detection state at least a part of the positioning probes move to a preset positioning area of ​​the power diode on the wafer; and a microprocessor unit coupled to the wafer for detecting a pattern composed of the positioning probes in the positioning area.

[0050] The power diode wafer detection device of the embodiment of the present invention has the following beneficial effects: First, by respectively arranging the positioning probe and the test probe on the probe card, the probability of pattern recognition errors can be reduced in the process of identifying the pattern composed of the positioning probes, thereby improving the detection efficiency. Second, the positioning probe group includes a plurality of positioning probes, and the plurality of positioning probes can form a variety of different patterns, that is, the positioning probe composition pattern has diversity. In the process of identifying the pattern composed of the positioning probes, the probability of pattern recognition errors can be reduced, thereby improving the detection efficiency. Third, at least a portion of the positioning probes in the detection state are moved to the preset positioning area of ​​the power diode on the wafer, that is, a portion of the positioning probes are used for positioning. Compared with the prior art that uses one positioning probe for positioning, the use of a portion of the positioning probes for positioning can reduce the force acting on each positioning probe, delay the wear of the positioning probe, and increase the service life of the positioning probe.

[0051] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. In the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0052] refer to Figures 3 to 8 , is a schematic diagram of the structure of a power diode wafer detection device according to an embodiment of the present invention.

[0053] The power diode wafer detection device includes: a probe card 200, which is coupled to a wafer 201 in a detection state, and a power diode 202 is formed on the wafer 201. The probe card 200 includes: a test probe group 203, which is used to transmit a test signal to the power diode 202; a positioning probe group 204, which moves in parallel with the test probe group 203, and the positioning probe group 204 includes a plurality of positioning probes. In the detection state, at least a part of the positioning probes moves to a preset positioning area 205 of the power diode 202 on the wafer 201; a microprocessor unit 206, which is coupled to the wafer 201 and is used to detect a pattern composed of the positioning probes in the positioning area 205.

[0054] It should be noted that Figure 4 is a partial structural schematic diagram of a probe card 200; Figure 5 2 is the projection of the test probe group 203 and the positioning probe group 204 in the probe card 200. Figure 5 As shown, in this embodiment, in the X direction, the spacing between the positioning probes in the positioning probe group 204 is a distance d1, and the spacing between the test probes in the test probe group 203 is a distance d2, and the distances d1 and d2 are equal. In the Y direction, the spacing between the positioning probes in the positioning probe group 204 is a distance d3, and the spacing between the test probes in the test probe group 203 is a distance d4, and the distances d3 and d4 are equal. The spacing d5 between the positioning probe group 204 and the test probe group 203 is equal to the distance d1. In other embodiments, the distances d1 to d5 can be designed according to actual needs.

[0055] It should be noted that the power diode wafer detection device according to the embodiment of the present invention is used to perform tests on the power diode, including but not limited to the following items: First, forward characteristic test, including: forward voltage test, that is, measuring the voltage of the power diode under a specified forward current; forward current test, that is, testing the current flowing through the power diode under a specified forward voltage. Second, reverse characteristic test, including: reverse saturation current test, that is, measuring the leakage current of the power diode under a specified reverse voltage; reverse voltage test, that is, measuring the voltage until the specified reverse current is reached. Third, reverse recovery time, that is, testing the time required for the power diode to go from the forward conduction state to the fully cut-off state; forward recovery time, that is, the time required from the cut-off state to the conduction state. Fourth, power loss test, that is, measuring the power loss of the power diode under specific conditions, including the conduction state and the switching state. Fifth, withstand voltage test, that is, measuring the maximum reverse voltage that the power diode can withstand without breakdown. Sixth, electrical stress test, that is, applying electrical stress exceeding its normal operating range to the power diode to test its reliability and life.

[0056] The purpose of using the power diode wafer detection device according to the embodiment of the present invention to test the power diode is to ensure that the power diode can work safely and stably under specified conditions and meet the design requirements.

[0057] It should be noted that the power diode wafer detection device described in the embodiment of the present invention can test only one power diode on the wafer 201 at a time, or can test multiple power diodes on the wafer 201 at a time to improve detection efficiency.

[0058] Continue to refer Figure 3 and Figure 4 In this embodiment, the power diode wafer detection device includes: a probe card 200. The probe card 200 is coupled to the wafer 201 in the detection state, and is used to transmit a test signal to the power diode 202 on the wafer 201 to detect the power diode 202. The detection state refers to the process of the power diode wafer detection device detecting the power diode 202.

[0059] The probe card 200 includes a front side 200a and a back side 200b opposite to the front side 200a. The front side 200a of the probe card 200 is mainly used to carry the test probe group 203 and the positioning probe group 204; the back side 200b of the probe card 200 is used to arrange components (not shown) and connecting wires (not shown), etc., and the components and connecting wires are coupled to the test probe group 203.

[0060] Continue to refer Figure 3 In this embodiment, the power diode wafer detection device includes: a signal unit 207; the signal unit 207 is located on the probe card 200, coupled to the test probe group 203, and is used to receive the test signal of the microprocessing unit 206 and transmit the test signal to the test probe group 203.

[0061] Continue to refer Figure 3 and Figure 4 In this embodiment, the power diode wafer detection device includes: a test probe group 203. The test probe group 203 is used to transmit a test signal to the power diode 202.

[0062] It should be noted that the test probe group 203 is used to transmit a test signal to the power diode. On the one hand, the test probe group 203 transmits the test signal provided by the signal unit 207 to the power diode 202 to detect the performance of the power diode 202; on the other hand, the test probe group 203 transmits the feedback signal output by the power diode 202 during the detection process to the microprocessor unit 206 to confirm whether the performance of the power diode 202 after the detection meets the design requirements.

[0063] The test probe group 203 includes a plurality of test probes. The number of test probes in the test probe group 203 is selected according to the current and / or voltage value required when testing a power diode. For example, when the current required to test a single power diode 202 is 80 mA and the maximum current that each test probe can withstand is 10 mA, 8 test probes are selected to detect the power diode 202.

[0064] The material of the test probe includes: one or more of ruthenium, nickel, platinum, gold, tungsten, molybdenum and beryllium copper, and the appropriate probe material is selected according to different test environments. Because ruthenium has good wear resistance and conductivity, it is suitable for high-frequency testing. In this embodiment, the test probe material is ruthenium.

[0065] The shape of the test probe includes: a column and / or a cone. In this embodiment, the shape of the test probe is a cone, the tip of one end of the cone is opposite to the wafer surface, and the other end of the cone away from the tip is fixed on the probe card 200 .

[0066] The arrangement of the test probes in the test probe group 203 may be arranged in a regular pattern, such as a matrix arrangement, or may be arranged randomly. Figure 4 and Figure 5 As shown, in this embodiment, the test probes are arranged on the probe card 200 in a regular pattern of 2 rows in the X direction and 4 columns in the Y direction, which has the following beneficial effects: first, the design of the probe card 200 is simplified; second, when detecting the power diode, the force on each test probe is uniform, so as to better delay the wear of the test probe and extend the service life of the test probe.

[0067] Continue to refer Figure 3 and Figure 4 In this embodiment, the power diode wafer detection device includes: a positioning probe group 204. The positioning probe group 204 is used to position all the positioning probes of the test probe group 203 on the power diode 202 to be detected.

[0068] The positioning probe group 204 moves in parallel with the test probe group 203. The positioning probe group 204 includes multiple positioning probes. In the detection state, at least a part of the positioning probes move to the preset positioning area 205 of the power diode 202 on the wafer 201, that is, the positioning probes designated for positioning are moved to the preset positioning area 205 during each test, thereby improving the detection efficiency.

[0069] The positioning probe group 204 moves in parallel with the test probe group 203, that is, when the positioning probe group 204 moves, the test probe group 203 moves with the positioning probe group 204. Compared with other embodiments in which the test probe group 203 and the positioning probe group 204 do not move together, the detection efficiency is improved.

[0070] It should be pointed out that the positioning probe group 204 moves in parallel with the test probe group 203, which is used to describe the relative movement relationship between the positioning probe group 204 and the test probe group 203. However, within the positioning probe group 204, only some of the positioning probes can be moved, and within the test probe group 203, only some of the test probes can be moved.

[0071] The positioning probe group 204 includes multiple positioning probes, which has the following beneficial effects: first, the patterns formed between the positioning probes can be diversified, providing more choices for the patterns required for detecting the positioning of power diodes, and in the process of identifying the patterns formed by the positioning probes, the probability of pattern recognition errors can be reduced, thereby improving the detection efficiency; second, in the positioning process before the power diode 202 is detected, multiple positioning probes can be selected from the multiple positioning probes for positioning, which reduces the pressure on a single positioning probe, delays the wear of the positioning probe, and extends the service life of the positioning probe.

[0072] In the detection state, at least a part of the positioning probes moves to the preset positioning area 205 of the power diode 202 on the wafer 201, which means that the number of at least a part of the positioning probes in the detection state is 3 or more, and its beneficial effects can refer to the beneficial effects of the positioning probe group 204 including multiple positioning probes. The preset positioning area 205 of the power diode is used to specify the position range of the positioning probe during positioning.

[0073] The number of the positioning probes can be determined based on the detection efficiency, the service life of the positioning probes and the cost of the positioning probes. The detection efficiency includes: the pattern formed by the positioning probes can be easily and quickly recognized by the microprocessing unit 206 with a low recognition error rate.

[0074] refer to Figure 6 Some of the positioning probes in the positioning probe group 304 reuse the test probes, that is, some of the probes in the test probes are used as positioning probes, which has the following beneficial effects: first, it reduces the number of positioning probes and saves costs; second, it reduces the number of positioning probes and saves space on the probe card 200.

[0075] In this embodiment, three positioning probes are used in the positioning probe group 304 , and two positioning probes reuse the test probe 203 a and the test probe 203 b in the test probe group 203 .

[0076] The material of the positioning probe includes: one or more of ruthenium, nickel, platinum, gold, tungsten, molybdenum, beryllium copper, polycarbonate and polypropylene. The appropriate positioning probe material is selected according to different test environments and test costs.

[0077] The positioning probe may be in the shape of a cylinder and / or a cone. In this embodiment, the positioning probe is in the shape of a cone, the tip of one end of the cone is opposite to the wafer surface, and the other end of the cone away from the tip is fixed to the probe card 200 .

[0078] The arrangement of the test probes in the positioning probe group 204 can be arranged in a regular pattern, such as a matrix arrangement, or in a random arrangement. In this embodiment, the positioning probes are arranged in a regular pattern on the probe card 200, which has the following beneficial effects: first, the design of the probe card 200 is simplified; second, when testing the power diode, the force on each positioning probe is uniform, so as to better delay the wear of the positioning probes and extend the service life of the test probes.

[0079] It should be noted that, in this embodiment, the material of the positioning probe is the same as the material of the test probe, and in other embodiments, the material of the positioning probe may be different from the material of the test probe.

[0080] At least three of the plurality of positioning probes form a graph, and the shapes and / or areas of the graphs are different, that is, the shapes and / or areas of the graphs formed by the positioning probes in the positioning probe group are different. This has the following beneficial effects: in the process of identifying the graph formed by the positioning probes, the probability of graph recognition errors can be reduced, thereby improving the detection efficiency.

[0081] In some specific embodiments, the positioning probe group has a total of 5 positioning probes. For example, 3 positioning probes are arbitrarily selected from the 5 positioning probes as positioning probes for power diode detection, and the shape formed by the 3 positioning probes selected each time has the same shape but different areas, or different shapes but the same areas, or different shapes but different areas. For another example, 4 positioning probes are arbitrarily selected from the 5 positioning probes as positioning probes for power diode detection, and the shape formed by the 4 positioning probes selected each time has the same shape but different areas, or different shapes but the same areas, or different shapes but different areas.

[0082] Any at least three positioning probes among the multiple positioning probes form a graph, and the shape and / or area of ​​each graph is different from the shape and / or area of ​​the graph formed by any at least three test probes among the multiple test probes, that is, the shape and / or area of ​​the graph formed by the positioning probes in the positioning probe group is different from the shape and / or area of ​​the graph formed by the test probes in the test probe group. This has the following beneficial effects: in the process of identifying the graph formed by the positioning probes, the probability of graph recognition errors can be reduced, thereby improving the detection efficiency.

[0083] In some specific embodiments, the positioning probe group has a total of 5 positioning probes, and the test probe group has a total of 8 test probes. For example, 3 of the 5 positioning probes are randomly selected as positioning probes for detecting power diodes, and 3 of the 8 test probes are randomly selected to form a graph. The graph composed of the 3 positioning probes selected each time and the graph composed of the 3 test probes selected each time have the same shape but different areas, or different shapes but the same areas, or different shapes but different areas. For another example, 4 of the 5 positioning probes are randomly selected as positioning probes for detecting power diodes, and 4 of the 8 test probes are randomly selected to form a graph. The graph composed of the 4 positioning probes selected each time and the graph composed of the 4 test probes selected each time have the same shape but different areas, or different shapes but the same areas, or different shapes but different areas.

[0084] The composition graphics of the test probe include: one or more of line segments, triangles, squares, trapezoids, rhombuses, and polygons; the composition graphics of at least a part of the positioning probes include: one or more of line segments, triangles, squares, trapezoids, rhombuses, and polygons.

[0085] Continue to refer Figure 3 and Figure 4 The power diode wafer detection device includes: a power diode 202. The power diode 202 is formed on a wafer 201 through a semiconductor manufacturing process.

[0086] The power diode 202 includes a preset test area 208 , and the projections of the test probes in the test probe group 203 on the wafer 201 are located within the test area 208 of the power diode.

[0087] The preset test area 208 is used to provide a test position range for the test probe group 203. The projections of the test probes in the test probe group 203 on the wafer 201 are located within the test area 208 of the power diode, so that during the process of detecting the power diode 202, the test probes of the test probe group 203 can all contact the test area 208 to provide the signals required for the detection.

[0088] Continue to refer Figure 3 In this embodiment, the power diode wafer detection device includes: a microprocessing unit 206. The microprocessing unit 206 is coupled to the wafer 201, and is used to detect the pattern and position of the positioning probes in the positioning area 205 on the one hand, and to analyze and process the detection signal fed back to the microprocessing unit 206 by the power diode 202 through the test probe group 203 on the other hand, so as to determine whether the performance of the detected power diode meets the design requirements.

[0089] Continue to refer Figure 3 and Figure 4 For the sake of simplicity of the drawings and convenience of description, in the embodiment of the present invention, the power diode wafer detection device only tests one power diode 202 at a time; the number of power diodes 202 on the wafer 201 is 1. The number of the test probe groups is 1, and the number of test probes in the 1 test probe group is 8, and the 8 test probes are arranged in 4 columns and 2 rows. The number of the positioning probe groups is 1, and the number of positioning probes in the 1 positioning probe group is 3, and the figure formed by the 3 positioning probes is a triangle. In other embodiments, the number of power diodes, test probe groups and test probes, and positioning probe groups and positioning probes are selected according to actual needs, and the present invention cannot be limited thereby.

[0090] Continue to refer Figure 3 , the power diode wafer detection device includes: a light sensor 209.

[0091] The optical sensor 209 is used to emit a light beam to the wafer 201 and form a light spot on the wafer 201. Each light beam forms a light spot, the number of the light spots is the same as the number of the at least part of the positioning probes, and the light spots correspond to the positioning probes one by one.

[0092] Continue to refer Figure 3 and Figure 4 In this embodiment, the optical sensor 209 emits three light beams to the wafer 201, namely, light beams 209a, 209b, and 209c, and forms three light spots on the wafer 201, namely, light spots 210a, 210b, and 210c; the number of at least a portion of the positioning probes is 3.

[0093] The light beam 209a corresponds to the light spot 210a, and the light spot 210a corresponds to the positioning probe 204a. The light beam 209b corresponds to the light spot 210b, and the light spot 210b corresponds to the positioning probe 204b. The light beam 209c corresponds to the light spot 210c, and the light spot 210c corresponds to the positioning probe 204c.

[0094] Continue to refer Figure 3 , combined with Figure 7 The microprocessor unit 206 is coupled to the optical sensor 209 and is used to send the number and position of the light spots to be formed to the optical sensor 209, and to detect whether the pattern and position formed by the light spots are consistent with the pattern and position formed by at least a part of the positioning probe.

[0095] In this embodiment, the microprocessor unit 206 controls the light sensor 209 to form three light spots in the preset positioning area 205 of the power diode 202, and the three light spots are light spots 210a, 210b, and 210c, respectively, and the figure formed by the three light spots is a triangle ABC; the number of at least a part of the positioning probes is three positioning probes, and the three positioning probes are 204a, 204b, and 204c, respectively, and the figure formed by the three positioning probes is a triangle DEF. The microprocessing unit 206 detects whether the shape and area of ​​the triangle ABC formed by the three light spots are the same as the triangle DEF formed by the three positioning probes, and the triangle vertex A and the triangle vertex D are in the same position in the positioning area 205, the triangle vertex B and the triangle vertex E are in the same position in the positioning area 205, and the triangle vertex C and the triangle vertex F are in the same position in the positioning area 205. That is, the microprocessing unit 206 detects whether the pattern and position formed by the three light spots are consistent with the pattern and position formed by the three positioning probes. If the pattern and position are consistent, the alignment is successful; if the pattern and / or position are inconsistent, the alignment fails.

[0096] Continue to refer Figure 3 In some embodiments, the light spot formed by the light beam emitted by the optical sensor 209 onto the wafer 201 is located inside the power diode 202 , so that the positioning probe group 204 and the light spot are aligned inside the power diode 202 .

[0097] That is to say, the optical sensor 209 emits a light beam into the preset positioning area 205 of the power diode 202 on the wafer 201 to form a light spot; the positioning probe group 204 is aligned with the light spot so that the positioning probe group 204 is positioned in the power diode 202 and in contact with the power diode.

[0098] refer to Figure 8 In other embodiments, the light spot formed by the light beam emitted by the optical sensor 209 onto the wafer 201 is located outside the power diode 202 , so that the positioning probe group 204 and the light spot are aligned outside the power diode 202 .

[0099] That is to say, the optical sensor 209 emits a light beam to the area 305 outside the power diode 202 on the wafer 201 to form a light spot; the positioning probe group 204 is aligned with the light spot so that the positioning probe group 204 and the light spot are aligned outside the power diode 202, that is, the positioning probe group 204 does not contact the power diode 202, thereby reducing the damage of the positioning probes in the positioning probe group 204 to the power diode 202 during the detection process.

[0100] It should be noted that, in other embodiments, the positioning probe group is first positioned within a predetermined positioning area of ​​the power diode or outside the power diode by a microprocessor unit, and then the optical sensor emits a light beam to form a light spot; the light spot is aligned with the positioning probe group, and the microprocessor unit analyzes and processes whether the pattern and position formed by the light spot on the wafer are consistent with the pattern and position formed by the positioning probes. Therefore, the power diode wafer detection device of the embodiment of the present invention can provide a variety of positioning methods and improve the detection efficiency.

[0101] Continue to refer Figure 3 The power diode wafer detection device includes: a display unit 211. The display unit 211 is used to display the image after the positioning probe group 204 and the power diode 202 are positioned, so as to facilitate the detection personnel to judge the positioning situation.

[0102] In this embodiment, the display unit 211 is coupled to the micro-processing unit 206 , and the image after the positioning probe set 204 and the power diode 202 are positioned is displayed on the display unit 211 after being processed by the micro-processing unit 206 .

[0103] The present invention further provides a testing machine (not shown) corresponding to the power diode wafer detection device described in any of the above embodiments.

[0104] The test machine comprises: a power diode wafer detection device applied to any of the above-mentioned embodiments; wherein the probe card is located on the test machine and is detachably connected to the test machine.

[0105] In order to solve the technical problem, the present invention also provides a detection method corresponding to a power diode wafer detection device.

[0106] refer to Fig. 9 , a flow chart of a detection method corresponding to a power diode wafer detection device according to an embodiment of the present invention.

[0107] refer to Fig. 9 , combined with Figure 3, a detection method for a power diode wafer detection device, applied to the power diode wafer detection device as described in any one of the above, comprising: moving the wafer 201 and / or the probe card 200 so that at least a part of the positioning probes moves to a preset positioning area 205 of the power diode 202 on the wafer 201 in the detection state; the microprocessing unit 206 detects a pattern composed of the positioning probes in the positioning area 205.

[0108] In order to enable those skilled in the art to more clearly understand and implement the embodiments of the present invention, the following Figure 3 , Figure 4 , Figure 7 and Fig. 9 The detection method of the power diode wafer detection device is described in detail.

[0109] An embodiment of the present application provides a detection method for a power diode wafer detection device, which is applied to the power diode wafer detection device in any of the aforementioned embodiments, and includes: a light sensor 209 .

[0110] like Fig. 9 As shown, the detection method may include the following steps.

[0111] Step S21: The positioning probe forms a pattern required for positioning.

[0112] like Figure 3 and Figure 7 As shown, in this embodiment, the number of the positioning probes is 3; the 3 positioning probes form a triangle DEF, and the triangle DEF is the pattern used for positioning in the process of detecting the positioning of the power diode 202, and the shape and area of ​​the triangle pattern DEF formed by the positioning probes are transmitted to the microprocessor unit 206.

[0113] Step S22: presetting a positioning area on the power diode.

[0114] like Figure 3 As shown, in this embodiment, a positioning area 205 is preset on the power diode 202, which is used to limit the light spot formed by the light beam emitted by the optical sensor 209 and the position range of the three positioning probes on the wafer 201, and the preset positioning area 205 position range data is provided to the microprocessing unit 206, so that the microprocessing unit 206 can control the movement of the optical sensor 209 and the positioning probe group 204.

[0115] Step S23: the microprocessing unit sends the number and positions of the light spots to be formed to the light sensor.

[0116] like Figure 3 and Figure 7As shown, in this embodiment, the microprocessor unit 206 sends the number and position of the light spots to be formed to the light sensor 209 according to the position, shape and area of ​​the figure formed by the positioning probes. That is, the microprocessor unit 206 sends to the light sensor 209 that the number of light spots to be formed is 3, and the triangle ABC formed by the three light spots has the same shape and area as the triangle DEF formed by the three positioning probes, and the triangle vertex A and the triangle vertex D are in the same position in the positioning area 205, the triangle vertex B and the triangle vertex E are in the same position in the positioning area 205, and the triangle vertex C and the triangle vertex F are in the same position in the positioning area 205, that is, the figure and position formed by the three light spots and the figure and position formed by the three positioning probes are consistent in the positioning area 205.

[0117] Step S24: using a light sensor to emit a light beam to the wafer and form a light spot on the wafer, each light beam forms a corresponding light spot, the number of the light spots is the same as the number of at least a portion of the positioning probes, and the light spots correspond to the positioning probes one by one.

[0118] like Figure 3 As shown, in this embodiment, a light sensor 209 is used to emit three light beams to the wafer 201 and form three light spots on the wafer. Each light beam forms a light spot, and the three light spots are the same as the number of the three positioning probes. The three light spots are light spots 210a, 210b, and 210c, and the three positioning probes are 204a, 204b, and 204c, respectively. The light spot 210a corresponds to the positioning probe 204a, the light spot 210b corresponds to the positioning probe 204b, and the light spot 210c corresponds to the positioning probe 204c.

[0119] Step S25: moving the wafer and / or the probe card so that at least a portion of the positioning probes move to a preset positioning area of ​​the power diode on the wafer in a detection state.

[0120] like Figure 3 As shown, in this embodiment, the probe card 200 is moved so that the three positioning probes in the detection state are moved to the preset positioning area 205 of the power diode 202 on the wafer 201, that is, the three positioning probes are moved to the three light spots in the preset positioning area 205, that is, the positioning probe 204a is moved to the position of the light spot 210a, the positioning probe 204b is moved to the position of the light spot 210b, and the positioning probe 204c is moved to the position of the light spot 210c. In other implementations, the wafer can be moved so that at least a part of the positioning probes are moved to the preset positioning area of ​​the power diode on the wafer in the detection state.

[0121] Step S26: The microprocessor unit detects whether the pattern and position formed by the light spot are consistent with the pattern and position formed by at least a portion of the positioning probes. If yes, execute step S27; if not, execute step S28.

[0122] like Figure 3 and Figure 4 As shown, in this embodiment, after the three light spots and the three probes are aligned, the optical sensor 209 collects the positions of the three light spots in the preset positioning area 205, the composition of the graphic shape, and the positions of the three positioning probes in the preset positioning area 205, the composition of the graphic shape, and transmits the collected position and graphic shape information to the microprocessing unit 206, and the microprocessing unit 206 analyzes and compares whether the graphic shape and position formed by the three light spots are consistent with the graphic shape and position formed by the three positioning probes. At the same time, the optical sensor 209 also collects the positions of all the test probes in the test probe group 203, and transmits the collected position data to the microprocessing unit 206 to confirm whether all the test probes are located in the test area 208.

[0123] Step S27: Detect the performance of the power diode.

[0124] Step S28: In response to the fact that the pattern and position formed by the light spot are inconsistent with the pattern and position formed by at least a part of the positioning probes, a warning message is issued.

[0125] like Figure 3 As shown, the microprocessor unit 206 detects that the pattern and position formed by the three light spots are inconsistent with the pattern and / or position formed by the three positioning probes, and the microprocessor unit 206 issues a warning message, such as detecting personnel through an alarm bell trapezoid.

[0126] It should be noted that for other descriptions of the detection method corresponding to the power diode wafer detection device, please refer to the description in the power diode wafer detection device, which will not be repeated here.

[0127] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A power diode wafer detection device, characterized in that: include: A probe card is coupled to a wafer in a detection state, wherein a power diode is formed on the wafer, and the probe card comprises: A test probe set, used for transmitting a test signal to the power diode; A positioning probe group moves in parallel with the test probe group, the positioning probe group includes a plurality of positioning probes, and at least a part of the positioning probes moves to a preset positioning area of ​​the power diode on the wafer in the detection state; A microprocessing unit is coupled to the wafer and is used to detect a pattern formed by the positioning probes in the positioning area.

2. The power diode wafer detection device according to claim 1, characterized in that: The test probe set includes a plurality of test probes; Part of the positioning probes in the positioning probe group reuses the test probes.

3. The power diode wafer detection device as claimed in claim 2, characterized in that: The power diode includes a preset test area, and projections of the test probes in the test probe group on the wafer are located within the test area of ​​the power diode.

4. The power diode wafer detection device according to claim 1, characterized in that: The number of at least a portion of the positioning probes is 3 or more; Any at least three positioning probes among the plurality of positioning probes form a graph, and the shapes and / or areas of the graphs are different; Any at least three positioning probes among the plurality of positioning probes form a graph, and the shape and / or area of ​​each graph are different from the shape and / or area of ​​the graph formed by any at least three testing probes among the plurality of testing probes.

5. The power diode wafer detection device as claimed in claim 4, characterized in that: The test probes may be formed in a shape of one or more triangle, square, trapezoid, rhombus, or polygon. The at least a portion of the positioning probes may be formed in a shape of one or more triangle, square, trapezoid, rhombus, or polygon.

6. The power diode wafer detection device according to claim 1, characterized in that: Also includes: An optical sensor, used for emitting a light beam to the wafer and forming a light spot on the wafer, wherein each light beam forms a light spot, the number of the light spots is the same as the number of the at least part of the positioning probes, and the light spots correspond to the positioning probes one by one; The microprocessor is coupled to the optical sensor and is used to send the number and position of light spots to be formed to the optical sensor, and to detect whether the pattern and position formed by the light spots are consistent with the pattern and position formed by at least a part of the positioning probe.

7. The power diode wafer detection device according to claim 6, characterized in that: The light spot formed by the light beam emitted by the optical sensor onto the wafer is located inside the power diode, so that the alignment between the positioning probe group and the light spot is located inside the power diode.

8. The power diode wafer inspection device according to claim 6, characterized in that: The light spot formed by the light beam emitted by the optical sensor onto the wafer is located outside the power diode, so that the alignment between the positioning probe group and the light spot is located outside the power diode.

9. The power diode wafer inspection device according to claim 1, characterized in that: Also includes: A signal unit, located on the probe card, coupled to the test probe set, and used to receive a test signal from the microprocessor unit and transmit it to the test probe set; The display unit is used to display the image after the positioning probe group and the power diode are positioned.

10. A testing machine, characterized in that: include: The power diode wafer detection device according to any one of claims 1 to 9; Wherein, the probe card is located on the test machine and is detachably connected to the test machine.

11. A detection method for a power diode wafer detection device, applied to the power diode wafer detection device as claimed in any one of claims 1 to 9, It is characterized in that The method comprises: moving the wafer and / or the probe card so that at least a part of the positioning probes moves to a preset positioning area of ​​the power diode on the wafer in a detection state; The microprocessing unit detects the pattern formed by the positioning probes in the positioning area.

12. The detection method of the power diode wafer detection device according to claim 11, characterized in that: The power diode wafer detection device also includes a light sensor; The method further comprises: The microprocessing unit sends the number and position of light spots to be formed to the light sensor; Using a light sensor to emit a light beam to the wafer and form a light spot on the wafer, each light beam forms a light spot, the number of the light spots is the same as the number of the at least part of the positioning probes, and the light spots correspond to the positioning probes one by one; The microprocessing unit detects whether the pattern and position formed by the light spot are consistent with the pattern and position formed by at least a part of the positioning probe.

13. The detection method of the power diode wafer detection device according to claim 12, characterized in that: Also includes: In response to the pattern and position formed by the light spot being inconsistent with the pattern and position formed by at least a portion of the positioning probes, a warning message is issued.

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