Light-emitting device, preparation method of light-emitting device and electronic equipment

Abstract

The invention discloses a light-emitting device, a preparation method of the light-emitting device and electronic equipment, and the light-emitting device comprises a bottom electrode and a top electrode which are oppositely arranged, a light-emitting layer disposed between the bottom electrode and the top electrode, and an auxiliary layer disposed between the bottom electrode and the light-emitting layer. The auxiliary layer comprises a first auxiliary sub-layer and a second auxiliary sub-layer which are arranged in a stacked manner, the material of the first auxiliary sub-layer comprises one or more of Ag and Cu, and the material of the second auxiliary sub-layer comprises one or more of a first metal oxide and a first carbon material, so that the problem that the first auxiliary sub-layer is oxidized to form a bulge is effectively solved, and the reliability of the display device is improved. Therefore, the problem that leakage current is increased due to the fact that the protrusions are formed on the first auxiliary sub-layer is solved, the service life of the light-emitting device is prolonged, and the performance stability of the light-emitting device is improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting device, a method for preparing a light-emitting device, and an electronic device. Background Art

[0002] A light-emitting device refers to a type of device that emits light through the injection and recombination of carriers, including but not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED). A light-emitting device has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, holes are injected from the anode of the device into the light-emitting area, and electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, light-emitting devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings, such as the device life of light-emitting devices needs to be further improved. Therefore, how to further improve the device life of light-emitting devices is of great significance to the application and development of light-emitting devices. Summary of the invention

[0004] The present application provides a light-emitting device, a method for preparing the light-emitting device, and an electronic device to improve the device life of the light-emitting device.

[0005] In a first aspect, the present application provides a light emitting device, comprising:

[0006] A bottom electrode and a top electrode are arranged opposite to each other;

[0007] a light-emitting layer, disposed between the bottom electrode and the top electrode; and

[0008] An auxiliary layer, disposed between the bottom electrode and the light-emitting layer;

[0009] The auxiliary layer includes a first auxiliary sublayer and a second auxiliary sublayer which are stacked, the material of the first auxiliary sublayer includes one or more of Ag and Cu, and the material of the second auxiliary sublayer includes one or more of a first metal oxide and a first carbon material.

[0010] Optionally, the metal element in the first metal oxide is selected from one or more of Fe, Zn, Sn and Al; and / or

[0011] The first metal oxide is selected from one or more of Fe3O4, Fe2O3, ZnO, SnO, SnO2 and Al2O3; and / or

[0012] The first carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber; and / or

[0013] The thickness of the auxiliary layer is 20nm-200nm.

[0014] Optionally, a thickness ratio of the first auxiliary sublayer to the second auxiliary sublayer is 1:(0.1-0.5).

[0015] Optionally, the auxiliary layer further includes a third auxiliary sublayer, and the third auxiliary sublayer is arranged on a side of the second auxiliary sublayer away from the first auxiliary sublayer;

[0016] The material of one of the second auxiliary sublayer and the third auxiliary sublayer is selected from the first metal oxide, and the material of the other one is selected from the first carbon material.

[0017] Optionally, a thickness ratio of the first auxiliary sublayer, the second auxiliary sublayer and the third auxiliary sublayer is 1:(0.04-0.2):(0.04-0.2).

[0018] Optionally, the materials of the top electrode and the bottom electrode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide; and / or

[0019] The thickness of the bottom electrode is 40nm to 300nm; and / or

[0020] The thickness of the top electrode is 40nm to 300nm; and / or

[0021] The light emitting device is a top emission light emitting device, and the transmittance of the top electrode to visible light is not less than 90%.

[0022] Optionally, the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;

[0023] The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2 + Cr 2+ , Mn 2+ 、Co2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation; and / or

[0024] One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the light-emitting device also includes a hole functional layer disposed between the anode and the light-emitting layer, wherein the material of the hole functional layer includes poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), 4,4'-bis (9-carbazole) biphenyl, poly [bis (4 -phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-bis(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine 、4,4',4"-tris(carbazole-9-yl)triphenylamine、4,4',4'-tris(2-naphthylphenylamino)triphenylamine、N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine、N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine、N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine、N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine、N2,N7-di-1-naphthyl-N2,N One or more of 7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide; and / or

[0025] The light-emitting device also includes an electronic functional layer arranged between the cathode and the light-emitting layer, and the material of the electronic functional layer includes a third metal oxide, and the third metal oxide is selected from one or more of zinc oxide, titanium oxide, tin oxide, barium oxide, tantalum oxide, aluminum oxide, zirconium oxide, magnesium zinc oxide, calcium zinc oxide, zirconium oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide and lithium titanium oxide.

[0026] In a second aspect, the present application provides a method for preparing a light-emitting device, comprising the following steps:

[0027] providing a bottom electrode, and forming an auxiliary layer on one side of the bottom electrode;

[0028] forming a light emitting layer on a side of the auxiliary layer away from the bottom electrode; and

[0029] forming a top electrode on a side of the light-emitting layer away from the auxiliary layer;

[0030] The method for forming the auxiliary layer comprises the following steps:

[0031] forming a first auxiliary sublayer on one side of the bottom electrode, wherein a material of the first auxiliary sublayer comprises one or more of Ag and Cu; and

[0032] A second auxiliary sublayer is formed on a side of the first auxiliary sublayer away from the bottom electrode, and a material of the second auxiliary sublayer includes one or more of a first metal oxide and a first carbon material.

[0033] Optionally, after the step of forming the second auxiliary sublayer on the side of the first auxiliary sublayer away from the bottom electrode, the method for forming the auxiliary layer further comprises the steps of: forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer;

[0034] wherein the material of one of the second auxiliary sublayer and the third auxiliary sublayer is selected from the first metal oxide, and the material of the other one is selected from the first carbon material; and / or

[0035] When the first auxiliary sublayer has a protrusion on a side close to the second auxiliary sublayer, before the step of forming the second auxiliary sublayer on a side of the first auxiliary sublayer away from the bottom electrode, the method for forming the auxiliary layer further includes the step of removing the protrusion.

[0036] In a third aspect, the present application provides an electronic device, which includes a light-emitting device as described in any one of the first aspects, or the electronic device includes a light-emitting device manufactured by any one of the preparation methods described in the second aspect.

[0037] The present application provides a light-emitting device, a method for preparing a light-emitting device, and an electronic device, which have the following technical effects:

[0038] In the light-emitting device of the present application, by adding a second auxiliary sublayer on the side of the first auxiliary sublayer close to the light-emitting layer, the surface of the first auxiliary sublayer close to the light-emitting layer is covered by the dense and conductive second auxiliary sublayer, which effectively improves the problem of the first auxiliary sublayer being oxidized to form a bulge, thereby improving the problem of increased leakage current caused by the formation of a bulge in the first auxiliary sublayer, which is beneficial to improving the device life and performance stability of the light-emitting device. The preparation method of the light-emitting device in the present application has the advantages of simple preparation process and suitability for large-scale industrial production. The electronic device of the present application includes the light-emitting device or the light-emitting device prepared by the preparation method of the light-emitting device, which is beneficial to improving the service life and performance stability of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0040] Figure 1 A schematic diagram of the structure of a first light-emitting device provided in an embodiment of the present application;

[0041] Figure 2 A schematic diagram of the structure of a second light-emitting device provided in an embodiment of the present application;

[0042] Figure 3 A schematic diagram of the structure of a third light-emitting device provided in an embodiment of the present application;

[0043] Figure 4 A schematic diagram of the structure of a fourth light-emitting device provided in an embodiment of the present application;

[0044] Figure 5 A schematic diagram of the structure of a fifth light-emitting device provided in an embodiment of the present application;

[0045] Figure 6 This is a scanning electron microscope image of the second auxiliary sublayer whose material is Fe3O4;

[0046] Figure 7 This is a scanning electron microscope image of the second auxiliary sublayer made of ZnO;

[0047] Figure 8 This is a scanning electron microscope image of the second auxiliary sublayer made of ZnO;

[0048] Fig. 9 A schematic diagram of the structure of the sixth light-emitting device provided in an embodiment of the present application.

[0049] The reference numerals are as follows:

[0050] 1: light-emitting device, 10: substrate, 11: anode, 12: cathode, 13: light-emitting layer, 14: auxiliary layer, 15: hole functional layer, 16: electron functional layer, 141: first auxiliary sublayer, 142: second auxiliary sublayer, 143: third auxiliary sublayer, 151: hole injection layer, 152: hole transport layer. DETAILED DESCRIPTION

[0051] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0052] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0053] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0054] In the description of the present application, the term “including” means “including but not limited to”.

[0055] The term "at least one" means one or more, and "multiple" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or plural, respectively.

[0056] In the present application, the description of "layer A is formed on one side of layer B" or "layer A is formed on the side of layer B away from layer C" may mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B; it may also mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other film layers may be formed between layer A and layer B.

[0057] The selection scope of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the said any and all combinations include any combination of two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions of A, B and A+B. For another example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the combination of four items of A, B, C, and D (that is, the technical solution connected by "logical and").

[0058] The term "particle size" refers to the diameter of a nanoparticle.

[0059] The terms "multiple", "multi-layer" or similar expressions refer to two (layers) or more, for example, three (layers), four (layers), five (layers), eight (layers), ten (layers), twenty (layers), thirty (layers), forty (layers), one hundred (layers) or a value between any two of the foregoing.

[0060] The applicant has found that in order to improve the luminous efficiency of the light-emitting device, an auxiliary layer can be provided between the bottom electrode and the light-emitting layer of the light-emitting device, and the material of the auxiliary layer is a metal with good reflective properties, such as one or more of Ag and Cu. However, in actual application, the metal in the auxiliary layer will be oxidized to form an oxide (such as silver oxide), thereby forming a bulge on the side of the auxiliary layer close to the light-emitting layer, resulting in an increase in the leakage current of the light-emitting device, thereby having a negative impact on the device life and performance stability of the light-emitting device.

[0061] Based on this, the embodiment of the present application provides a light emitting device, such as Figure 1 As shown, the light-emitting device 1 includes a bottom electrode 11, a top electrode 12, a light-emitting layer 13 and an auxiliary layer 14, wherein the bottom electrode 11 and the top electrode 12 are arranged opposite to each other, the light-emitting layer 13 is arranged between the bottom electrode 11 and the top electrode 12, and the auxiliary layer 14 is arranged between the light-emitting layer 13 and the bottom electrode 11. The auxiliary layer 14 includes a first auxiliary sublayer 141 and a second auxiliary sublayer 142 which are stacked, the material of the first auxiliary sublayer 141 includes one or more of Ag and Cu, and the material of the second auxiliary sublayer 142 includes one or more of a first metal oxide and a first carbon material.

[0062] In the light-emitting device 1 of the embodiment of the present application, a second auxiliary sublayer 142 is added to the side of the first auxiliary sublayer 141 close to the light-emitting layer 13, so that the surface of the first auxiliary sublayer 141 close to the light-emitting layer 13 is covered by the dense and conductive second auxiliary sublayer 142, which effectively improves the problem of the first auxiliary sublayer 141 being oxidized to form a bulge, thereby improving the problem of increased leakage current caused by the formation of a bulge in the first auxiliary sublayer 141, which is beneficial to improving the device life and performance stability of the light-emitting device 1.

[0063] When the material of the second auxiliary sublayer 142 includes the first metal oxide, in order to further improve the problem of the first auxiliary sublayer 141 being oxidized to form a protrusion, in some embodiments of the present application, the metal element in the first metal oxide is selected from one or more of Fe, Zn, Sn and Al to improve the density of the second auxiliary sublayer 142. Correspondingly, as an example, the first metal oxide is selected from one or more of Fe3O4, Fe2O3, ZnO, SnO, SnO2 and Al2O3.

[0064] When the material of the second auxiliary sublayer 142 includes the first carbon material, in order to further improve the problem of the first auxiliary sublayer 141 being oxidized to form a protrusion, in some embodiments of the present application, the first carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber. It should be noted that the first carbon material is a non-metallic element that does not contain oxygen atoms, and the first carbon material will not supply oxygen atoms to the first auxiliary sublayer 141, thereby effectively preventing the first auxiliary sublayer 141 from being oxidized again.

[0065] In order to improve both the luminous efficiency and the device life of the light-emitting device 1, in some embodiments of the present application, the thickness ratio of the first auxiliary sublayer 141 to the second auxiliary sublayer 142 is 1:(0.1~0.5), for example, it can be 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5 and a value between any two of the aforementioned ratios.

[0066] In order to further improve the luminous efficiency and device life of the light emitting device 1, in some embodiments of the present application, Figure 2 As shown, the auxiliary layer 14 further includes a third auxiliary sublayer 143, which is disposed on a side of the second auxiliary sublayer 142 away from the first auxiliary sublayer 141. The material of one of the second auxiliary sublayer 142 and the second auxiliary sublayer 143 is selected from the first metal oxide, and the material of the other is selected from the first carbon material.

[0067] Further, in order to improve the comprehensive performance of the light-emitting device 1 and reduce the manufacturing cost of the light-emitting device 1, in some embodiments of the present application, the thickness ratio of the first auxiliary sublayer 141, the second auxiliary sublayer 142 and the third auxiliary sublayer 143 is 1:1:(0.04-0.2):(0.04-0.2). The thickness ratio of the first auxiliary sublayer 141 to the second auxiliary sublayer 142 can be, for example, 1:0.04, 1:0.08, 1:0.1, 1:0.13, 1:0.15, 1:0.2 and a value between any two of the above ratios, and the thickness ratio of the first auxiliary sublayer 141 to the third auxiliary sublayer 143 can be, for example, 1:0.04, 1:0.08, 1:0.1, 1:0.13, 1:0.15, 1:0.2 and a value between any two of the above ratios.

[0068] In the light-emitting device 1 of the embodiment of the present application, one of the bottom electrode 11 and the top electrode 12 is an anode, and the other is a cathode. In order to improve the comprehensive performance of the light-emitting device 1, in some embodiments of the present application, the materials of the bottom electrode 11 and the top electrode 12 are independently selected from one or more of a metal, a second carbon material, and a second metal oxide. Among them, the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg; the second carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fiber; the second metal oxide can be doped or undoped, including but not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO). The bottom electrode 11 or the top electrode 12 may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and bottom layers are respectively doped or undoped transparent metal oxides, and the material of the middle layer is a metal, for example, it may be one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2, and the thickness of the middle layer does not exceed 35nm. The thickness of the bottom electrode 11 and the top electrode 12 are, for example, independently selected from 20nm to 300nm.

[0069] It can be understood that when the light emitting device 1 is a top emission type, the transmittance of the top electrode 12 to visible light is not less than 90%, for example, not less than 91%, not less than 92%, not less than 93%, not less than 94%, not less than 95%, not less than 96%, not less than 97%, not less than 98%, not less than 99%, or not less than 100%. When the light emitting device 1 is a bottom emission type, the transmittance of the bottom electrode 11 to visible light is not less than 90%, for example, not less than 91%, not less than 92%, not less than 93%, not less than 94%, not less than 95%, not less than 96%, not less than 97%, not less than 98%, not less than 99%, or not less than 100%.

[0070] In the light emitting device 1 of the embodiment of the present application, the light emitting layer 13 may be, for example, two or more layers, and the thickness of the light emitting layer 13 may be, for example, 10 nm to 100 nm. In order to improve the comprehensive performance of the light emitting device 1, in some embodiments of the present application, the material of the light emitting layer 13 includes one or more of an organic light emitting material and a quantum dot.

[0071] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials. One or more.

[0072] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0073] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0074] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0075] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0076] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0077] In order to improve the solution processing performance of quantum dots and further improve the luminous efficiency of the light-emitting device 1, in some embodiments of the present application, the surface of the quantum dots is also connected with a ligand. The ligand can be a ligand commonly used in the art, including but not limited to ligands containing hydroxyl, amino, thiol, carboxyl, C1-C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0078] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0079] In order to further improve the photoelectric performance and device life of the light-emitting device 1, in some embodiments of the present application, the light-emitting device 1 further includes a hole functional layer 15 disposed between the anode and the light-emitting layer 13. It is understood that Figure 3 As shown, when the light emitting device 1 is a positive structure, the bottom electrode 11 is an anode and the top electrode 12 is a cathode, and the hole functional layer 15 is disposed between the bottom electrode 11 and the light emitting layer 13; Figure 4 As shown, when the light emitting device 1 is an inverted structure, the bottom electrode 11 is a cathode and the top electrode 12 is an anode, and the hole function layer 15 is disposed between the top electrode 12 and the light emitting layer 13 .

[0080] The hole functional layer 15 may be a single-layer structure or a multi-layer structure. The hole functional layer 15 may include, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 15 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole injection layer, the hole transport layer, and the electron blocking layer may be arranged in sequence, and the hole injection layer is closer to the anode than the electron blocking layer. As an example, continue to refer to Figure 5 and Fig. 9The hole function layer 15 includes a stacked hole injection layer 151 and a hole transport layer 152, and the hole injection layer 151 is closer to the anode than the hole transport layer 152. The thickness of the hole function layer 15 is, for example, 10 nm to 200 nm.

[0081] The material of the hole functional layer 15 includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-di(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)phenyl)amine] )diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl -4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped oxide Vanadium sulfide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide. Among them, transition metal sulfide includes but is not limited to one or more of molybdenum sulfide, tungsten sulfide and copper sulfide; transition metal selenide includes but is not limited to one or more of molybdenum selenide and tungsten selenide; doped or undoped nickel oxide is exemplified by NiO, doped or undoped molybdenum oxide is exemplified by MoO3, doped or undoped tungsten oxide is exemplified by WO3, doped or undoped vanadium oxide is exemplified by V2O5, doped or undoped chromium oxide is exemplified by CrO3, doped or undoped copper oxide is exemplified by CuO and Cu2O.

[0082] In order to further improve the comprehensive performance of the light emitting device 1, in some embodiments of the present application, the light emitting device further includes an electronic functional layer 16, and the electronic functional layer 16 is arranged between the cathode and the light emitting layer 13. It can be understood that Figure 3 As shown, when the light emitting device 1 is a positive structure, the bottom electrode 11 is an anode and the top electrode 12 is a cathode, and the electronic functional layer 16 is arranged between the top electrode 12 and the light emitting layer 13; Figure 4 As shown, when the light emitting device 1 is an inverted structure, the bottom electrode 11 is a cathode and the top electrode 12 is an anode, and the electronic functional layer 16 is disposed between the bottom electrode 11 and the light emitting layer 13 .

[0083] The electronic functional layer 16 may be a single-layer structure or a multi-layer structure. The electronic functional layer 16 may include, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 16 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron injection layer, the electron transport layer, and the hole blocking layer may be arranged in sequence, and the electron injection layer is closer to the cathode than the hole blocking layer. The thickness of the electronic functional layer 16 may be, for example, 10 nm to 200 nm.

[0084] The material of the electronic functional layer 14 includes, but is not limited to, one or more of a third metal oxide, a II-VI semiconductor material, a III-V semiconductor material, a I-III-VI semiconductor material, 8-hydroxyquinoline lithium, cesium carbonate, cesium fluoride, cesium azide, lithium fluoride, organic phosphorus oxide, organic thiophosphine compound, and organic selenium phosphine compound. The third metal oxide may be doped or undoped, and the undoped third metal oxide may be, for example, one or more selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and the doped third metal oxide may be, for example, one or more selected from zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, exemplified by ZnO. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In(1-x) Sn x O and Ti (1-x) Li x O, wherein 0<x≤0.5. The II-VI semiconductor material is selected from one or more of ZnS, ZnSe and CdS. The III-V semiconductor material is selected from one or more of InP and GaP. The I-III-VI semiconductor material is selected from one or more of CuInS and CuGaS.

[0085] The embodiment of the present application also provides a method for preparing a light-emitting device, which can be used to prepare any of the light-emitting devices described above, comprising the following steps:

[0086] S1. providing a bottom electrode, and forming an auxiliary layer on one side of the bottom electrode;

[0087] S2, forming a light-emitting layer on a side of the auxiliary layer away from the bottom electrode;

[0088] S3. Form a top electrode on a side of the light-emitting layer away from the auxiliary layer.

[0089] The method for forming the auxiliary layer includes the following steps:

[0090] S11, forming a first auxiliary sublayer on one side of the bottom electrode, wherein a material of the first auxiliary sublayer includes one or more of Ag and Cu;

[0091] S12. Form a second auxiliary sublayer on a side of the first auxiliary sublayer away from the bottom electrode, wherein a material of the second auxiliary sublayer comprises one or more of a first metal oxide and a first carbon material.

[0092] It should be noted that the structural compositions of the bottom electrode, the top electrode, the light-emitting layer and the auxiliary layer are all described in the foregoing text, the first metal oxide and the first carbon material are also described in the foregoing text, and the thickness relationship between the first auxiliary sublayer and the second auxiliary sublayer is also described in the foregoing text. Among them, the formation methods of the first auxiliary sublayer and the second auxiliary sublayer include but are not limited to chemical methods and / or physical methods. The preparation method of the first auxiliary sublayer can be, for example, a physical coating method. When the material of the second auxiliary sublayer is the first metal oxide, the second auxiliary sublayer can also be prepared by a physical coating method. The physical coating method includes but is not limited to one or more of a thermal evaporation coating method, an electron beam evaporation coating method, a magnetron sputtering method, a multi-arc ion coating method, a physical vapor deposition method, an atomic layer deposition method and a pulsed laser deposition method. When the material of the second auxiliary sublayer is the first carbon material, the second auxiliary sublayer can be prepared by a solution method, and the solution method includes but is not limited to one or more of spin coating, printing, inkjet printing, scraping, printing, dip pulling, immersion, spraying, roll coating, casting, slit coating and strip coating.

[0093] In order to further improve the luminous efficiency and device life of the light-emitting device, in some embodiments of the present application, after step S12, the method for forming the auxiliary layer further includes the step of: forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer; wherein the material of one of the second auxiliary sublayer and the third auxiliary sublayer is selected from the first metal oxide, and the material of the other is selected from the first carbon material. The thickness relationship between the first auxiliary sublayer to the third auxiliary sublayer and the structural composition of each reflective sublayer are all described above.

[0094] In some embodiments of the present application, when the first auxiliary sublayer has a protrusion on one side close to the second auxiliary sublayer, the protrusion is, for example, an oxide formed by oxidation of the metal in the first auxiliary sublayer, and between step S11 and step S12, the method for forming the auxiliary layer further includes the step of removing the protrusion. The method for removing the protrusion includes, but is not limited to, one or more of a chemical microetching method, a heating reduction method (heating treatment in a hydrogen environment), a microwave controllable oscillation method, and a laser irradiation method.

[0095] The chemical microetching method includes, for example, the steps of: immersing the prefabricated device including the first auxiliary sublayer (the first auxiliary sublayer is, for example, located at the outermost layer) in a hydrochloric acid aqueous solution with a concentration of 0.5 mol / L to 1 mol / L for 30 s to 1 min.

[0096] The heating reduction method, for example, includes the steps of placing a prefabricated device including a first auxiliary sublayer (the first auxiliary sublayer is, for example, located at the outermost layer) in a hydrogen atmosphere, and then heating the first auxiliary sublayer at 300-500°C.

[0097] The microwave controlled oscillation method, for example, includes the steps of placing a prefabricated device including a first auxiliary sublayer (the first auxiliary sublayer is, for example, located at the outermost layer) in an organic solvent, then subjecting it to ultrasonic treatment, and then sequentially performing cleaning and drying steps.

[0098] In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, the method for preparing the light-emitting device further includes the step of: forming a hole functional layer between the anode and the light-emitting layer. The structural composition of the hole functional layer refers to the above description. That is, when the light-emitting device is a positive structure, the bottom electrode is the anode and the top electrode is the cathode. Between step S1 and step S2, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on the side of the auxiliary layer away from the bottom electrode; the light-emitting layer is formed on the side of the hole functional layer away from the auxiliary layer. When the light-emitting device is an inverted structure, the bottom electrode is the cathode and the top electrode is the anode. Between step S2 and step S3, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on the side of the light-emitting layer away from the auxiliary layer; the top electrode is formed on the side of the hole functional layer away from the light-emitting layer.

[0099] In order to further improve the comprehensive performance of the light-emitting device, in some embodiments of the present application, the method for preparing the light-emitting device further includes the step of: forming an electronic functional layer between the cathode and the light-emitting layer. The structural composition of the electronic functional layer refers to the above description. That is, when the light-emitting device is a positive structure, the bottom electrode is an anode and the top electrode is a cathode. Between step S2 and step S3, the method for preparing the light-emitting device further includes the steps of: forming an electronic functional layer on the side of the light-emitting layer away from the auxiliary layer; the top electrode is formed on the side of the electronic functional layer away from the light-emitting layer. When the light-emitting device is an inverted structure, the bottom electrode is a cathode and the top electrode is an anode. Between step S1 and step S2, the method for preparing the light-emitting device further includes the steps of: forming an electronic functional layer on the side of the auxiliary layer away from the bottom electrode; the light-emitting layer is formed on the side of the electronic functional layer away from the auxiliary layer.

[0100] It should be noted that, in addition to the light-emitting layer, the preparation methods of other functional film layers in the light-emitting device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of the solution method includes but is not limited to spin coating, printing, inkjet printing, blade coating, printing, dip-pull method, immersion method, spraying, roll coating, casting, slit coating and strip coating. When a solution method is used to form a functional film layer, a drying process needs to be added to remove the solvent to form a cured film. The drying process includes but is not limited to heat treatment, vacuum drying, air drying, etc. Among them, for the functional film layer located above the light-emitting layer (the material is an inorganic compound, especially inorganic nanoparticles), after a cured film is formed by a low-temperature (temperature not higher than 80°C) drying process such as vacuum drying, air drying, etc., in order to further improve the film quality, the cured film can be further annealed by a process that can control the annealing depth, such as pulsed laser annealing, electron beam annealing, atomic annealing, infrared radiation annealing, etc.

[0101] After the preparation of each functional film layer of the light-emitting device is completed, a packaging process is required. The packaging process can be carried out by common machine packaging or manual packaging. In the packaging process environment, the oxygen content and water content are both lower than 0.1ppm to ensure the stability of the light-emitting device.

[0102] The embodiment of the present application also provides an electronic device, the electronic device includes any one of the light-emitting devices described in the embodiment of the present application, or the electronic device includes the light-emitting device prepared by any one of the preparation methods described in the embodiment of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0103] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0104] Example 1

[0105] This embodiment provides a light-emitting device and a method for preparing the same. The light-emitting device is a quantum dot light-emitting diode of a positive structure, and the light-emitting mode is a top emission mode, such as Figure 5 As shown, in the direction from bottom to top, the light-emitting device 1 includes a substrate 10, a bottom electrode 11, an auxiliary layer 14, a hole functional layer 15, a light-emitting layer 13, an electronic functional layer 16 and a top electrode 12 which are stacked in sequence, wherein the bottom electrode 11 is an anode and the top electrode 12 is a cathode. The auxiliary layer 14 is composed of a first auxiliary sublayer 141 and a second auxiliary sublayer 142 which are stacked, and the first auxiliary sublayer 141 is closer to the bottom electrode 11 than the second auxiliary sublayer 142. The hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 which are stacked, and the hole injection layer 151 is closer to the bottom electrode 11 than the hole transport layer 152. The electronic functional layer 16 is a single-layer structure.

[0106] The materials and thicknesses of the various layers in the light emitting device 1 are as follows:

[0107] The material of the substrate 10 is glass, and the thickness of the substrate 10 is 2 mm;

[0108] The material of the bottom electrode 11 is ITO, and the thickness of the bottom electrode 11 is 20 nm;

[0109] The material of the first auxiliary sublayer 141 is Ag, and the thickness of the first auxiliary sublayer 141 is 110 nm;

[0110] The material of the second auxiliary sublayer 142 is Fe3O4, and the thickness of the second auxiliary sublayer 142 is 20 nm;

[0111] The material of the light-emitting layer 13 is CdZnSe / ZnS quantum dots, the light-emitting color is green, and the thickness of the light-emitting layer 13 is 20 nm;

[0112] The material of the hole injection layer 151 is PEDOT:PSS, and the thickness of the hole injection layer 151 is 50 nm;

[0113] The material of the hole transport layer 152 is TFB (CAS No. 223569-31-1), and the thickness of the hole transport layer 152 is 30 nm;

[0114] The material of the electronic functional layer 16 is nano ZnO (average particle size is 5 nm), and the thickness of the electronic functional layer 16 is 50 nm;

[0115] The material of the top electrode 12 is Ag, and the thickness of the top electrode 12 is 35 nm.

[0116] The method for preparing the light emitting device in this embodiment includes the following steps:

[0117] S1.1. Provide a substrate, the substrate comprising a substrate, a bottom electrode and a first auxiliary sublayer stacked in sequence, the first auxiliary sublayer having a silver oxide protrusion on a side away from the bottom electrode, and immerse the substrate in a 0.5 mol / L hydrochloric acid aqueous solution for 1 min to remove the protrusion;

[0118] S1.2, forming a second auxiliary sublayer on the side of the first auxiliary sublayer away from the bottom electrode by vacuum evaporation, and then observing the surface morphology of the second auxiliary sublayer by scanning electron microscopy, such as Figure 6 As shown;

[0119] S1.3, in an air environment at room temperature and pressure, spin-coat a 2.8% by mass PEDOT:PSS aqueous solution on the side of the second auxiliary sublayer away from the first auxiliary sublayer, and then heat-treat at 150°C to solidify the film to obtain a hole injection layer;

[0120] S1.4, in a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the second auxiliary sublayer, and then heat-treat at 150° C. to solidify the film to obtain a hole transport layer;

[0121] S1.5. In a nitrogen environment at room temperature and pressure, a CdZnSe / ZnS green quantum dot-n-octane solution with a concentration of 20 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain a light-emitting layer;

[0122] S1.6. In a nitrogen environment at room temperature and pressure, a 30 mg / mL nano ZnO-ethanol solution is spin-coated on the side of the light-emitting layer away from the hole transport layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain an electronic functional layer;

[0123] S1.7, place the laminated structure after step S1.6 in a vacuum no higher than 3×10 -4 In the evaporation chamber of Pa, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask plate to obtain a top electrode, which is then packaged to obtain a light-emitting device.

[0124] Example 2

[0125] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the second auxiliary sublayer is replaced with "ZnO", and the surface morphology of the second auxiliary sublayer is observed using a scanning electron microscope. Figure 7 shown.

[0126] The preparation method of the light emitting device in this embodiment is carried out with reference to that in Embodiment 1.

[0127] Example 3

[0128] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the second auxiliary sublayer is replaced with "SnO2", and the surface morphology of the second auxiliary sublayer is observed using a scanning electron microscope. Figure 8 shown.

[0129] The preparation method of the light emitting device in this embodiment is carried out with reference to that in Embodiment 1.

[0130] Example 4

[0131] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the second auxiliary sublayer is replaced with "Fe2O3".

[0132] The preparation method of the light emitting device in this embodiment is carried out with reference to that in Embodiment 1.

[0133] Example 5

[0134] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the second auxiliary sublayer is replaced with "graphite".

[0135] The preparation method of the light emitting device in this embodiment is carried out with reference to that in Embodiment 1.

[0136] Example 6

[0137] This embodiment provides a light-emitting device and a method for manufacturing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the structure and composition of the auxiliary layer are different. Fig. 9 As shown, the auxiliary layer 14 is composed of a first auxiliary sublayer 141, a second auxiliary sublayer 142 and a third auxiliary sublayer 143 which are stacked in sequence, and the third auxiliary sublayer 143 is closer to the light-emitting layer 13 than the first auxiliary sublayer 141. The structure of the first auxiliary sublayer 141 is the same as that of Example 1; the material of the second auxiliary sublayer 142 is Fe3O4, and the thickness of the second auxiliary sublayer 142 is 15nm; the material of the third auxiliary sublayer 143 is graphite, and the thickness of the third auxiliary sublayer 143 is 5nm.

[0138] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the step of "forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer by vacuum evaporation" is added between step S1.2 and step S1.3.

[0139] Example 7

[0140] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the structure of the auxiliary layer is different. Figure 7 As shown, the auxiliary layer 14 is composed of a first auxiliary sublayer 141, a second auxiliary sublayer 142 and a third auxiliary sublayer 143 which are stacked in sequence, and the third auxiliary sublayer 143 is closer to the light-emitting layer 13 than the first auxiliary sublayer 141. The structure of the first auxiliary sublayer 141 is the same as that of Example 1; the material of the second auxiliary sublayer 142 is Fe3O4, and the thickness of the second auxiliary sublayer 142 is 10nm; the material of the third auxiliary sublayer 143 is graphite, and the thickness of the third auxiliary sublayer 143 is 10nm.

[0141] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the step of "forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer by vacuum evaporation" is added between step S1.2 and step S1.3.

[0142] Example 8

[0143] This embodiment provides a light-emitting device and a method for manufacturing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the structure and composition of the auxiliary layer are different. Figure 7As shown, the auxiliary layer 14 is composed of a first auxiliary sublayer 141, a second auxiliary sublayer 142 and a third auxiliary sublayer 143 which are stacked in sequence, and the third auxiliary sublayer 143 is closer to the light-emitting layer 13 than the first auxiliary sublayer 141. The structure of the first auxiliary sublayer 141 is the same as that of Example 1; the material of the second auxiliary sublayer 142 is Fe3O4, and the thickness of the second auxiliary sublayer 142 is 5nm; the material of the third auxiliary sublayer 143 is graphite, and the thickness of the third auxiliary sublayer 143 is 15nm.

[0144] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the step of "forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer by vacuum evaporation" is added between step S1.2 and step S1.3.

[0145] Example 9

[0146] This embodiment provides a light-emitting device and a method for manufacturing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the structure and composition of the auxiliary layer are different. Figure 7 As shown, the auxiliary layer 14 is composed of a first auxiliary sublayer 141, a second auxiliary sublayer 142 and a third auxiliary sublayer 143 which are stacked in sequence, and the third auxiliary sublayer 143 is closer to the light-emitting layer 13 than the first auxiliary sublayer 141. The structure of the first auxiliary sublayer 141 is the same as that of Example 1; the material of the second auxiliary sublayer 142 is graphite, and the thickness of the second auxiliary sublayer 142 is 5 nm; the material of the third auxiliary sublayer 143 is Fe3O4, and the thickness of the third auxiliary sublayer 143 is 15 nm.

[0147] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the step of "forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer by vacuum evaporation" is added between step S1.2 and step S1.3.

[0148] Comparative Example

[0149] This comparative example provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Example 1, the light-emitting device in this comparative example is different in that the second auxiliary sublayer is omitted, and the thickness of the first auxiliary sublayer is replaced with "130 nm".

[0150] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this comparative example is different in that step S1.2 is omitted.

[0151] Experimental example

[0152] The performance of the light-emitting devices of Examples 1 to 9 and the comparative example was tested, and the FPD optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various types of related connecting wires and data cards, efficiency test cassettes and data acquisition systems and other components were used to build an efficiency test system) to detect the start-up voltage, current, brightness, luminous spectrum and other parameters of each light-emitting device, and then calculate the key parameters such as external quantum efficiency and power efficiency, and use the life test equipment to test the service life of each of the above-mentioned light-emitting devices. The detection environment conditions are: ambient temperature 25°C, ambient humidity 50%.

[0153] The current efficiency test method is: set the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the light-emitting device in the range of 0V to 8V, the initial voltage value of the brightness collection is 3V, and the data is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions, and the current efficiency (CE@1Knit, cd / A) at a brightness value of 1000nit is obtained.

[0154] The device life test method is as follows: under the drive of a constant current (2mA), the electroluminescence lifetime analysis of each light-emitting device is performed using a lifetime test equipment, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) is recorded. The time required for the brightness of each single-hole device to decay from 100% to 95% at a brightness of 1000nit is calculated using a decay fitting formula (LT95@1Knit, h).

[0155] The performance test data of each light emitting device is detailed in Table 1 below:

[0156] Table 1 Summary of performance test data of light emitting devices in Examples 1 to 9 and Comparative Examples

[0157]

[0158] It can be seen from Table 2 that compared with the comprehensive performance of the light-emitting device in the comparative example, the comprehensive performance of the light-emitting device in Examples 1 to 9 is more advantageous, specifically, the light-emitting devices in Examples 1 to 9 have good luminous efficiency, and the device life of the light-emitting devices in Examples 1 to 9 is longer. Taking the light-emitting devices in Example 9 and the comparative example, the CE@1Knit of the light-emitting device in Example 9 is 1.7 times that of the CE@1Knit of the light-emitting device in the comparative example, and the T95 of the light-emitting device in Example 9 is 2.7 times that of the T95 of the light-emitting device in the comparative example, and the LT95@1Knit of the light-emitting device in Example 9 is 3.4 times that of the LT95@1Knit of the light-emitting device in the comparative example.

[0159] It can be seen that by adding at least one film layer on the side of the first auxiliary sublayer close to the light-emitting layer, the material of the film layer includes one or more of the first metal oxide and the first carbon material, so that the surface of the first auxiliary sublayer close to the light-emitting layer is covered with a dense and conductive film layer, which effectively improves the problem of the first auxiliary sublayer being oxidized to form a bulge, thereby improving the problem of increased leakage current caused by the formation of a bulge in the first auxiliary sublayer, thereby improving the device life and performance stability of the light-emitting device, and the light-emitting device has good luminous efficiency.

[0160] From the performance test data of the light emitting devices in Examples 1 to 3, it can be seen that the comprehensive performance of the light emitting device in Example 1 is better than that of the light emitting devices in Examples 2 and 3. The reason may be that: Figures 6 to 8 It can be seen that compared with ZnO or SnO2, Fe3O4 particles are smaller and arranged more closely. Therefore, for the second auxiliary sublayer of the same thickness, compared with the second auxiliary sublayer made of ZnO or SnO2, the second auxiliary sublayer made of Fe3O4 has a higher density, which can further improve the problem of oxidation of the first auxiliary sublayer and further enhance the device life and performance stability of the light-emitting device.

[0161] It can be seen from the performance test data of the light-emitting devices in Example 1 and Example 5 that the comprehensive performance of the light-emitting device in Example 1 is better than the comprehensive performance of the light-emitting device in Example 5. The reason may be that: graphite is used as the material of the second auxiliary sublayer. If the thickness of the second auxiliary sublayer is thick, it will cause a certain degree of negative impact on the luminous efficiency of the light-emitting device.

[0162] It can be seen from Examples 1 and 6 to 9 that the comprehensive performance of the light-emitting device in Example 9 is the best, followed by Example 6. This shows that the auxiliary layer is composed of the first auxiliary sublayer to the third auxiliary sublayer arranged in sequence, and the material of one of the second auxiliary sublayer and the third auxiliary sublayer is the first metal oxide, and the material of the other is the first carbon material. By adjusting the thickness of the second auxiliary sublayer and the third auxiliary sublayer, the comprehensive performance of the light-emitting device can be further improved.

[0163] In addition, the light emitting devices of Examples 1 to 9 and the comparative example were subjected to leakage rate tests to detect the leakage rate of each light emitting device under constant current (2 mA) driving. The test results are detailed in Table 2 below:

[0164] Table 2 List of leakage rates of light emitting devices in Examples 1 to 9 and Comparative Examples

[0165]

[0166]

[0167] It can be seen from Table 2 that compared with the leakage rate of the light-emitting device in the comparative example, the leakage rate of the light-emitting device in Examples 1 to 9 is lower, which shows that: by adding at least one film layer on the side of the first auxiliary sublayer close to the light-emitting layer, the material of the film layer includes one or more of the first metal oxide and the first carbon material, so that the surface of the first auxiliary sublayer close to the light-emitting layer is covered with a dense and conductive film layer, which improves the problem of the first auxiliary sublayer being oxidized to form a protrusion, thereby improving the problem of increased leakage current caused by the formation of a protrusion in the first auxiliary sublayer, and effectively reducing the leakage rate of the light-emitting device, which is beneficial to improving the device life and performance stability of the light-emitting device.

[0168] The above is a detailed introduction to a light-emitting device, a method for preparing a light-emitting device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting device, characterized in that: include: A bottom electrode and a top electrode are arranged opposite to each other; A light-emitting layer is disposed between the bottom electrode and the top electrode; as well as An auxiliary layer, disposed between the bottom electrode and the light-emitting layer; The auxiliary layer includes a first auxiliary sublayer and a second auxiliary sublayer which are stacked, the material of the first auxiliary sublayer includes one or more of Ag and Cu, and the material of the second auxiliary sublayer includes one or more of a first metal oxide and a first carbon material.

2. The light emitting device according to claim 1, characterized in that: The metal element in the first metal oxide is selected from one or more of Fe, Zn, Sn and Al; and / or The first metal oxide is selected from one or more of Fe3O4, Fe2O3, ZnO, SnO, SnO2 and Al2O3; and / or The first carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber; and / or The thickness of the auxiliary layer is 20nm-200nm.

3. The light emitting device according to claim 1, characterized in that: The thickness ratio of the first auxiliary sublayer to the second auxiliary sublayer is 1:(0.1-0.5).

4. The light emitting device according to any one of claims 1 to 3, characterized in that: The auxiliary layer further includes a third auxiliary sublayer, and the third auxiliary sublayer is arranged on a side of the second auxiliary sublayer away from the first auxiliary sublayer; The material of one of the second auxiliary sublayer and the third auxiliary sublayer is selected from the first metal oxide, and the material of the other one is selected from the first carbon material.

5. The light emitting device according to claim 4, characterized in that: The thickness ratio of the first auxiliary sublayer, the second auxiliary sublayer and the third auxiliary sublayer is 1:(0.04-0.2):(0.04-0.2).

6. The light emitting device according to claim 1, characterized in that: The materials of the top electrode and the bottom electrode are independently selected from one or more of a metal, a second carbon material and a second metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the second carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide; and / or The thickness of the bottom electrode is 40nm to 300nm; and / or The thickness of the top electrode is 40nm to 300nm; and / or The light emitting device is a top emission light emitting device, and the transmittance of the top electrode to visible light is not less than 90%.

7. The light emitting device according to claim 1, characterized in that: The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound, or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeT e, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InA s, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAl NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPS b, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2 + , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation; and / or One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the light-emitting device also includes a hole functional layer disposed between the anode and the light-emitting layer, wherein the material of the hole functional layer includes poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), 4,4'-bis (9-carbazole) biphenyl, poly [bis (4 -phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-bis(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine 、4,4',4"-tris(carbazole-9-yl)triphenylamine、4,4',4'-tris(2-naphthylphenylamino)triphenylamine、N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine、N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine、N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine、N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine、N2,N7-di-1-naphthyl-N2,N One or more of 7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, doped or undoped graphene, C60, doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped P-type gallium nitride, doped or undoped chromium oxide, doped or undoped copper oxide, transition metal sulfide and transition metal selenide; and / or The light-emitting device also includes an electronic functional layer arranged between the cathode and the light-emitting layer, and the material of the electronic functional layer includes a third metal oxide, and the third metal oxide is selected from one or more of zinc oxide, titanium oxide, tin oxide, barium oxide, tantalum oxide, aluminum oxide, zirconium oxide, magnesium zinc oxide, calcium zinc oxide, zirconium oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide and lithium titanium oxide.

8. A method for preparing a light emitting device, characterized in that: The steps include: providing a bottom electrode, and forming an auxiliary layer on one side of the bottom electrode; forming a light emitting layer on a side of the auxiliary layer away from the bottom electrode; and forming a top electrode on a side of the light-emitting layer away from the auxiliary layer; The method for forming the auxiliary layer comprises the following steps: forming a first auxiliary sublayer on one side of the bottom electrode, wherein a material of the first auxiliary sublayer comprises one or more of Ag and Cu; and A second auxiliary sublayer is formed on a side of the first auxiliary sublayer away from the bottom electrode, and a material of the second auxiliary sublayer includes one or more of a first metal oxide and a first carbon material.

9. The preparation method according to claim 8, characterized in that: After the step of forming the second auxiliary sublayer on the side of the first auxiliary sublayer away from the bottom electrode, the method for forming the auxiliary layer further comprises the steps of: forming a third auxiliary sublayer on the side of the second auxiliary sublayer away from the first auxiliary sublayer; wherein the material of one of the second auxiliary sublayer and the third auxiliary sublayer is selected from the first metal oxide, and the material of the other one is selected from the first carbon material; and / or When the first auxiliary sublayer has a protrusion on a side close to the second auxiliary sublayer, before the step of forming the second auxiliary sublayer on a side of the first auxiliary sublayer away from the bottom electrode, the method for forming the auxiliary layer further includes the step of removing the protrusion.

10. An electronic device, characterized in that: The electronic device comprises the light-emitting device as claimed in any one of claims 1 to 7, or the electronic device comprises the light-emitting device manufactured by the manufacturing method as claimed in claim 8 or 9.

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