System and method for controlling precursor delivery

Abstract

Systems and methods for controlling precursor delivery. The systems and methods may include a precursor delivery vessel in fluid communication with a gas flow line. The precursor delivery container may include at least one tray containing a vaporizable precursor. An amount of thermal energy may be supplied to the at least one tray in an amount sufficient to vaporize the vaporizable precursor. The vaporized precursor may be dispensed from the precursor delivery container to the gas flow line. The thermal energy supplied to the at least one tray is adjustable sufficient to maintain the pressure of the vaporized precursor in the gas flow line within a pressure range.

Description

Technical Field

[0001] The present disclosure relates to systems and methods for controlling the delivery of precursors, such as, for example but not limited to, vapor precursors.

[0002] priority

[0003] Priority is claimed herein to U.S. Provisional Patent Application No. 63 / 322,195, filed on March 21, 2022. The priority document is incorporated herein by reference. Background Art

[0004] Conventional vapor delivery systems fail to meet the performance specifications of semiconductor processing tools and the like. Summary of the invention

[0005] Some embodiments relate to a method for controlling precursor delivery. In some embodiments, the method includes at least one of the following steps: obtaining a precursor delivery container containing a vaporizable precursor on at least one tray; supplying an amount of thermal energy sufficient to vaporize the vaporizable precursor to the at least one tray; dispensing the vaporized precursor from the precursor delivery container to a gas flow line; and adjusting the amount of thermal energy supplied to the at least one tray to be sufficient to maintain a pressure of the vaporized precursor in the gas flow line within a certain pressure range. In some embodiments, the at least one tray includes a thermal energy having a pressure greater than 15 W m -1 K -1 The thermal conductivity of the material.

[0006] In some embodiments, the vaporizable precursor includes at least one of a metal oxyhalide, a metal halide, or any combination thereof.

[0007] In some embodiments, the vaporizable precursor comprises MoO 2 Cl 2 、MoOCl 4 , WO 2 Cl 2 WOCl 4 or at least one of any combination thereof.

[0008] In some embodiments, the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

[0009] In some embodiments, the at least one tray comprises a 25W m -1 K -1 Up to 470W m -1 K -1 The thermal conductivity of the material.

[0010] In some embodiments, the pressure range includes pressures in the range of 100 Torr to 750 Torr.

[0011] In some embodiments, the pressure range includes a pressure tolerance within a range of ±1 Torr to ±5 Torr.

[0012] In some embodiments, the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

[0013] In some embodiments, the flow rate of the vaporized precursor in the gas flow line is in a range of 50 sccm to 600 sccm.

[0014] In some embodiments, the vaporized precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range.

[0015] Some embodiments are directed to a system for controlling precursor delivery. In some embodiments, the system includes a precursor delivery container containing a vaporizable precursor on at least one tray. In some embodiments, the at least one tray includes a vaporizable precursor having a flow rate greater than 15 W m -1 K -1 In some embodiments, the system includes a heater configured to supply an amount of thermal energy to the at least one tray to produce a vaporized precursor from the vaporizable precursor. The system includes a gas flow line configured to deliver the vaporized precursor from the precursor delivery container to a semiconductor processing tool. In some embodiments, the system includes a control device configured to adjust the amount of thermal energy supplied to the at least one tray to be sufficient to maintain a pressure of the vaporized precursor in the gas flow line within a certain pressure range.

[0016] In some embodiments, the vaporizable precursor includes at least one of a metal oxyhalide, a metal halide, or any combination thereof.

[0017] In some embodiments, the vaporizable precursor comprises MoO 2 Cl 2 、MoOCl 4 , WO 2 Cl 2 WOCl 4 or at least one of any combination thereof.

[0018] In some embodiments, the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

[0019] In some embodiments, the at least one tray comprises a 25W m -1 K -1to 470W W m -1 K -1 The thermal conductivity of the material.

[0020] In some embodiments, the pressure range includes pressures in the range of 100 Torr to 750 Torr.

[0021] In some embodiments, the pressure range includes a pressure tolerance within a range of ±1 Torr to ±5 Torr.

[0022] In some embodiments, the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

[0023] In some embodiments, the flow rate of the vaporized precursor in the gas flow line is in a range of 50 sccm to 600 sccm.

[0024] In some embodiments, the vaporized precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Some embodiments of the present disclosure are described herein with reference to the accompanying drawings by way of example only. With specific reference to the details of the drawings, it should be emphasized that the embodiments shown in the drawings are by way of example and for the purpose of illustrative discussion of the embodiments of the present disclosure. In this regard, the description in conjunction with the drawings enables a person skilled in the art to understand how the embodiments of the present disclosure can be practiced.

[0026] Figure 1 A flow chart showing a method for controlling precursor delivery according to some embodiments.

[0027] Figure 2 A schematic diagram of a system for controlling precursor delivery is shown according to some embodiments. DETAILED DESCRIPTION

[0028] Among those benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure that can be embodied in various forms. In addition, each of the examples given with respect to the various embodiments of the present disclosure is intended to be illustrative rather than restrictive.

[0029] Any prior patents and publications referenced herein are incorporated by reference in their entirety.

[0030] Throughout the specification and claims, unless the context clearly dictates otherwise, the following terms have the meanings explicitly associated herein. Although the phrases "in one embodiment," "in an embodiment," and "in some embodiments" as used herein may refer to the same embodiment, they do not necessarily refer to the same embodiment. In addition, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to different embodiments. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0031] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout the specification, the meanings of "a", "an", and "the" include plural references. The meaning of "in..." includes "in..." and "on...".

[0032] Figure 1 A flow chart showing a method for controlling precursor delivery according to some embodiments.

[0033] like Figure 1 As shown in , method 100 includes one or more of the following steps: step 102 of obtaining a precursor delivery container containing a vaporizable precursor on at least one tray; step 104 of supplying a certain amount of thermal energy to the at least one tray; step 106 of dispensing the vaporized precursor from the precursor delivery container to a gas flow line; and step 108 of adjusting the amount of thermal energy supplied to the at least one tray.

[0034] At step 102, in some embodiments, a precursor delivery container containing a vaporizable precursor on at least one tray is obtained.

[0035] The vaporizable precursor may include a precursor that can be vaporized. In some embodiments, the precursor includes a precursor that can be vaporized by applying thermal energy (e.g., heat). In some embodiments, the precursor includes a precursor that can be vaporized by applying irradiation (e.g., light). In some embodiments, the precursor includes a precursor that can be vaporized by applying thermal energy and irradiation. The vaporizable precursor may be present on at least one tray as a solid, a liquid, or a solid and a liquid. For example, in some embodiments, the vaporizable precursor includes a vaporizable solid precursor. In some embodiments, the vaporizable precursor includes a vaporizable liquid precursor. In some embodiments, the vaporizable precursor includes a vaporizable solid precursor and a vaporizable liquid precursor. It should be understood that other types of vaporizable precursors may be used herein without departing from the scope of the present disclosure.

[0036] The vaporizable precursor may include, consist of, or consist essentially of at least one of an elemental metal, a metal halide, a metal oxyhalide, an organometallic compound, a metal-organic complex, or any combination thereof.

[0037] In some embodiments, the vaporizable precursor comprises, consists of, or consists essentially of at least one of the following materials: dimethylhydrazine, trimethylaluminum (TMA), hafnium chloride (HfCl 4 ), zirconium chloride (ZrCl 4 ), indium trichloride, indium monochloride, aluminum trichloride, titanium iodide, tungsten carbonyl, Ba(DPM) 2 、Sr(DPM) 2 )、TiO(DPM) 2 、Tetrakis-dipivaloyl zirconium formyl (Zr(DPM) 4 ), decaborane, octadecaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, precursors incorporating alkyl amidine ligands, organometallic precursors, zirconium tert-butylate (Zr(t-OBu) 4 ), Tetrakis(diethylamine)zirconium(Zr(Net 2 ) 4 ), tetra(diethylamine)hafnium(Hf(Net 2 ) 4 ), tetrakis(dimethylamine)titanium (TDMAT), tert-butyliminodimethyl(diethylamine)tantalum (TBTDET), penta(dimethylamine)tantalum (PDMAT), penta(ethylmethylamine)tantalum (PEMAT), tetrakis(dimethylamine)zirconium (Zr(NMe 2 ) 4 ), Hafnium tert-butylate (Hf(tOBu) 4 ), Xenon difluoride (XeF 2 ), xenon tetrafluoride (XeF 4 ), xenon hexafluoride (XeF 6 ) or any combination thereof.

[0038] In some embodiments, the vaporizable precursor includes, consists of, or consists essentially of at least one of the following materials: decaborane, hafnium tetrachloride, zirconium tetrachloride, indium trichloride, metal organic β-diketonate complex, tungsten hexafluoride, cyclopentadienylcycloheptatrienyl titanium (CpTiCht), aluminum trichloride, titanium iodide, cyclooctatetraenylcyclopentadienyl titanium, biscyclopentadienyltin dihydrazide, trimethylgallium, trimethylindium, alkylaluminum such as trimethylaluminum, triethylaluminum, trimethylaminoalanine, dimethylzinc, tetramethyltin, trimethylantimony, diethylcadmium, tungsten carbonyl, or any combination thereof.

[0039] In some embodiments, the vaporizable precursor includes, consists of, or consists essentially of at least one of the following materials: elemental boron, copper, phosphorus, decaborane, gallium halide, indium halide, antimony halide, arsenic halide, gallium halide, aluminum iodide, titanium iodide, MoO 2 Cl 2 、MoOCl 4 、MoCl5 、WCl 5 WOCl 4 、WCl 6 , cyclopentadienyl cycloheptatrienyl titanium (CpTiCht), cyclooctatetraene cyclopentadienyl titanium, biscyclopentadienyl titanium dihydrazide In(CH 3 ) 2 (hfac), dibromomethyl antimonide, carbonyl tungsten, metal organic β-diketone complex, metal organic alkoxide complex, metal organic carboxylate complex, metal organic aryl complex, metal organic amide complex, or any combination thereof. In some embodiments, the vaporizable precursor comprises, consists of, or consists essentially of MoO 2 Cl 2 、MoOCl 4 , WO 2 Cl 2 WOCl 4 At least one of or any combination thereof.

[0040] In some embodiments, the vaporizable precursor comprises, consists of, or consists essentially of at least one of any type of source material that can be liquefied by heating or dissolving in a solvent, including, for example, but not limited to, decaborane (B 10 H 14 ), pentaborane (B 5 H 9 ), octadecadiene (B 18 H 22 ), boric acid (H 3 BO 3 )、SbCl 3 、SbCl 5 Or at least one of any combination thereof. In some embodiments, the vaporizable precursor comprises, consists of, or consists essentially of at least one of the following materials: AsCl 3 , AsBr 3 , AsF 3 , AsF 5 , AsH 3 、As 4 O 6 、As 2 Se 3 As 2 S 2 、As 2 S 3 、As 2 S 5 、As 2 Te 3 , B 4 H 11 , B 4 H 10 , B3 H 6 N 3 、BBr 3 、BCl 3 、BF 3 、BF 3 .O(C 2 H 5 ) 2 、BF 3 .HIGH 3 、B 2 H 6 、F 2 、HF、GeBr 4 、GeCl 4 、GeF 4 、GeH 4 、H 2 、HCl、H 2 The、H 2 The、H 2 S、WF 6 、SiH 4 、SiH 2 Cl 2 、SiHCl 3 、SiCl 4 、SiH 3 Cl、NH 3 、NH 3 、Ar、Br 2 、HBr、BrF 5 、CO 2 、CO、COCl 2 、COF 2 、Cl 2 、ClF 3 、CF 4 、C 2 F 6 、C 3 F 8 、C 4 F 8 、C 5 F 8 、CHF 3 、CH 2 F 2 、CH 3 F、CH 4 、SiH 6 、He、HCN、Kr、Ne、Ni(CO) 4 、HNO 3 、NO、N 2 、NO 2 、NF 3 、N 2 O、C8 H 24 O 4 Si 4 , PH 3 POCl 3 、PCl 5 PF 3 , PFS, SbH 3 、SO 2 , SF 6 , SF 4 、Si(OC 2 H 5 ) 4 , C 4 H 16 Si 4 O 4 、Si(CH 3 ) 4 、SiH(CH 3 ) 3 、TiCl 4 、Xe、SiF 4 , WOF 4 、TaBr 5 、TaCl 5 、TaF 5 、Sb(C 2 H 5 ) 3 、Sb(CH 3 ) 3 、In(CH 3 ) 3 , PBr 5 , PBr 3 , RuF 5 or any combination thereof.

[0041] In some embodiments, the solvent is an organic solvent, an inorganic solvent, or any combination thereof. In some embodiments, the solvent contains arsenic, phosphorus, antimony, germanium, indium, tin, selenium, tellurium, fluorine, carbon, boron, aluminum, bromine, carbon, chlorine, nitrogen, silicon, tungsten, tantalum, ruthenium, selenium, nickel, sulfur, or any combination thereof. It should be understood that other vaporizable precursors may be used herein without departing from the present disclosure.

[0042] At least one tray may include or may consist of a material having a thermal conductivity above a threshold thermal conductivity. For example, in some embodiments, at least one tray includes, consists of, or consists essentially of a material having a thermal conductivity greater than 15 W m -1 K -1 In some embodiments, at least one tray comprises, consists of, or consists essentially of a material having a thermal conductivity of at least 16 W m -1 K -1 , at least 17W m -1 K-1 , at least 18W m -1 K -1 , at least 19W m -1 K -1 , at least 20W m -1 K -1 , at least 25W m -1 K -1 , at least 50W m -1 K -1 , at least 75W m -1 K -1 , at least 100W m -1 K -1 , at least 150W m -1 K -1 , at least 200W m -1 K -1 , at least 250W m -1 K -1 , at least 300Wm -1 K -1 , at least 350W m -1 K -1 , at least 400W m -1 K -1 , at least 450W m -1 K -1 , at least 500W m -1 K -1 , at least 550W m -1 K -1 or at least 600W m -1 K -1 In some embodiments, at least one tray comprises, consists of, or consists essentially of a material having a thermal conductivity of 16 W m -1 K -1 To 1000W m -1 K -1 For example, in some embodiments, at least one tray comprises a material having a thermal conductivity of 25 W m -1 K -1 Up to 750W m -1 K -1 , 25W m -1 K -1 Up to 470W m -1 K -1 , 25W m -1 K -1 Up to 500W m -1 K -1 , 100W m -1 K -1 Up to 500W m -1K -1 or 150W m -1 K -1 Up to 500W m -1 K -1 In some embodiments, the thermal conductivity of the material is the same as the thermal conductivity of the at least one tray, or at least similar to the thermal conductivity of the at least one tray (eg, within 0.1% to 5% of the thermal conductivity in the at least one tray).

[0043] In some embodiments, at least one tray may further include or may further consist of a material having a thermal conductivity below a threshold thermal conductivity. For example, in some of these embodiments, if the total thermal conductivity of the at least one tray is greater than a threshold thermal conductivity (e.g., greater than 15 W m -1 K -1 , or any of the thermal conductivity thresholds and ranges disclosed herein), then at least one tray may further include or may further consist of a material having a thermal conductivity below the threshold thermal conductivity. For example, in some embodiments, at least one tray includes a thermal conductivity greater than 15 W m -1 K -1 The thermal conductivity of the material is 15W m -1 K -1 or less thermal conductivity, wherein the total thermal conductivity of at least one tray is greater than 15Wm -1 K -1 (or any of the thermal conductivity thresholds and ranges disclosed herein). In some embodiments, the ratio or relative amount of each material can be varied to obtain a thermal conductivity greater than 15 W m -1 K -1 (or any of the thermal conductivity thresholds and ranges disclosed herein).

[0044] Non-limiting examples of materials for the at least one tray include, for example, but not limited to, at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof. In some embodiments, the at least one tray does not include at least one of the foregoing.

[0045] In some embodiments, for example, at least one tray comprises, consists of, or consists essentially of at least one of the following materials: silver, copper, aluminum, lead, nickel, gold, iron, zinc, rhodium, lithium, beryllium, sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, radium, scandium, titanium, vanadium, chromium, cobalt, gallium, germanium, arsenic, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, palladium, cadmium, indium, tin, antimony, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, thallium, neodymium, promethium, holmium, erbium, lutetium, thorium, protactinium, uranium, ytterbium, lutetium, oxides thereof, mixed oxides thereof, or any combination thereof (e.g., as mixtures thereof, alloys thereof, etc.). In some embodiments, at least one tray does not include at least one of the foregoing.

[0046] In some embodiments, at least one tray comprises, consists of, or consists essentially of at least one of silicon, boron, carbon, nitrogen, fluorine, oxygen, germanium, arsenic, antimony, chlorine, bromine, iodine, or any combination thereof. In some embodiments, at least one tray does not include at least one of the foregoing.

[0047] In some embodiments, at least one tray comprises, consists of, or consists essentially of at least one of a carbon material. In some embodiments, the carbon material comprises at least one of graphene, graphite, carbon nanoparticles (e.g., carbon nanotubes), or any combination thereof. In some embodiments, the graphene comprises at least one of the following materials: graphene having 1 to 3 layers (e.g., very few layer graphene (vFLG)), graphene having 2 to 5 layers (e.g., few layer graphene (FLG)), graphene having 2 to 10 layers (e.g., multilayer graphene (MLG)), graphene nanosheets (e.g., graphene sheet stacks (GNPs)), graphene oxide, reduced graphene oxide, graphene powder, graphene solution, graphene paste, graphene nanosheets (e.g., graphene sheets having a thickness of 1 to 3 nm and at least one lateral dimension of 100 nm to 100 μm), functionalized graphene, or any combination thereof. In some embodiments, at least one tray comprises at least one of graphite, crystalline graphite, amorphous graphite, aggregate graphite (e.g., block graphite or vein graphite), graphite fiber, brass, silicon carbide coated graphite, or any combination thereof. In some embodiments, at least one tray does not include at least one of the foregoing.

[0048] In some embodiments, at least one tray comprises, consists of, or consists essentially of at least one of the following materials: silver, silver alloy, copper, copper alloy, aluminum, aluminum alloy, lead, nickel, nickel plating, stainless steel, graphite, crystalline graphite, amorphous graphite, aggregated graphite (e.g., bulk graphite or vein graphite), pyrolytic carbon-coated graphite, graphite fiber, very few layer graphene (vFLG), few layer graphene (FLG), multilayer graphene (MLG), graphene nanosheets (GNPs), graphene oxide, reduced graphene oxide, graphene powder, graphene solution, graphene paste, graphene nanosheets, functionalized graphene, brass, silicon carbide coated graphite, glass ceramic, aluminum nitride , silicon carbide, aluminum oxide, silicon nitride, zirconium oxide, beryllium oxide, boron nitride, zinc oxide, aluminum nitride, copper oxide, carbon nanotubes, brass, diamond, gold, iron, zinc, zinc oxide, aluminum nitride, copper oxide, carbon nanotubes, rhodium, lithium, beryllium, sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, radium, scandium, titanium, vanadium, chromium, cobalt, gallium, germanium, arsenic, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, palladium, cadmium, indium, tin, antimony, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, thallium, boron, carbon, silicon, nitrogen, fluorine, oxygen, germanium, arsenic, antimony, chlorine, bromine, iodine, neodymium, promethium, holmium, erbium, lutetium, thorium, protactinium, uranium, ytterbium, lutetium, polymers, or any combination thereof (e.g., mixtures or alloys of two or more of the preceding materials). In some embodiments, at least one tray does not include at least one of the foregoing.

[0049] In some embodiments, the at least one tray or material of the at least one tray is inert or non-reactive to at least one of the vaporizable precursor, the vaporized precursor, the carrier gas, or any other material with which the at least one tray contacts or is brought into contact.

[0050] At step 104, in some embodiments, an amount of thermal energy is supplied to the at least one tray.

[0051] Thermal energy may be supplied to at least one tray in an amount sufficient to evaporate the vaporizable precursor. For different vaporizable precursors, the amount of thermal energy sufficient to evaporate the vaporizable precursor may vary depending on, for example, but not limited to, the vaporizable precursor, the phase in which the vaporizable precursor is present on the at least one tray, the conditions and parameters (e.g., temperature, pressure, etc.) under which the vaporization is performed, or any combination thereof. In some embodiments, for example, the amount of thermal energy sufficient to evaporate a vaporizable liquid precursor may depend on the heat of vaporization of the vaporizable liquid precursor. In some embodiments, the amount of thermal energy sufficient to evaporate a vaporizable solid precursor may depend on the heat of sublimation of the vaporizable solid precursor. In some embodiments, the amount of thermal energy required to evaporate a vaporizable precursor in solid or liquid form may depend on the specific vaporizable precursor being evaporated.

[0052] The thermal energy supplied to the at least one tray may be provided in the form of heat. In some embodiments, for example, supplying thermal energy to the at least one tray comprises heating the at least one tray to a temperature sufficient to evaporate the vaporizable precursor. In some embodiments, supplying thermal energy to the at least one tray comprises heating the at least one tray at a temperature sufficient to evaporate the vaporizable precursor. In some embodiments, supplying thermal energy to the at least one tray comprises heating the vaporizable precursor to a temperature sufficient to evaporate the vaporizable precursor. In some embodiments, supplying thermal energy to the at least one tray comprises heating the vaporizable precursor at a temperature sufficient to evaporate the vaporizable precursor.

[0053] The temperature sufficient to evaporate the vaporizable precursor may be a temperature in the range of 100° C. to 250° C. In some embodiments, for example, the temperature sufficient to evaporate the vaporizable precursor is a temperature in the range of 110° C. to 180° C., 120° C. to 170° C., 120° C. to 150° C., 120° C. to 140° C., 125° C. to 135° C., 130° C. to 190° C., 140° C. to 180° C., 150° C. to 170° C., 155° C. to 165° C., or any other sub-range between 100° C. to 250° C. In some embodiments, the vaporized precursor is produced at a temperature in the range of 100° C. to 250° C.

[0054] In step 106, in some embodiments, the vaporized precursor is dispensed from the precursor delivery container to a gas flow line.

[0055] The vaporized precursor may be dispensed from the precursor delivery container to a gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include discharging the vaporized precursor to the gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include releasing the vaporized precursor to the gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include flowing the vaporized precursor to the gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include supplying the vaporized precursor to the gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include delivering the vaporized precursor to the gas flow line. In some embodiments, dispensing the vaporized precursor from the precursor delivery container may include feeding the vaporized precursor to the gas flow line.

[0056] In some embodiments, the vaporized precursor is dispensed from a precursor delivery container along with a carrier gas. The carrier gas may include an inert or inert gas. In some embodiments, the carrier gas includes at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof.

[0057] The gas flow line may be in fluid communication with the tool. The tool may be located downstream of the precursor delivery container. The tool may include any process utilizing a vapor precursor. In some embodiments, for example, the tool may include a semiconductor manufacturing process. In some embodiments, the tool includes at least one of the following processes: ion implantation, epitaxial growth, plasma etching, reactive ion etching, metallization, physical vapor deposition, chemical vapor deposition, plasma deposition, photolithography, cleaning, doping, or any combination thereof. In some embodiments, these tools are part of a manufacturing process for semiconductor devices and products, microelectronic devices and products, photovoltaic devices and products, or flat display devices and products, etc. Other tools may be used herein without departing from the present disclosure.

[0058] At step 108 , in some embodiments, an amount of thermal energy supplied to the at least one tray is adjusted.

[0059] The thermal energy supplied to at least one tray can be adjusted to an amount sufficient to maintain the pressure of the vaporized precursor in the gas flow line within a certain pressure range. In some embodiments, the amount of thermal energy supplied to at least one tray is increased (e.g., by heating to increase the temperature of at least one tray, the vaporizable precursor, or any combination thereof). In some embodiments, the amount of thermal energy supplied to at least one tray is decreased (e.g., by not heating (or actively cooling) to reduce the temperature of at least one tray, the vaporizable precursor, or any combination thereof). In some embodiments, in addition to the vaporized precursor, the gas flow line includes a carrier gas. In some of these embodiments, the adjustment of the thermal energy is sufficient to maintain the pressure of the vaporized precursor and the carrier gas in the gas flow line within a certain pressure range.

[0060] A change in the amount of thermal energy supplied to at least one tray results in a corresponding change in the pressure of the vaporized precursor in the gas flow line. The pressure of the vaporized precursor in the gas flow line may exhibit at least one of a linear response to the change in thermal energy, a nonlinear response to the change in thermal energy, or any combination thereof. In some embodiments, for example, the pressure of the vaporized precursor in the gas flow line may exhibit a linear response or a substantially linear response to the change in temperature. In some embodiments, the pressure of the vaporized precursor in the gas flow line may exhibit a nonlinear response or a substantially nonlinear response to the change in temperature. In some embodiments, the pressure of the vaporized precursor in the gas flow line may exhibit a linear response or a substantially linear response within a first temperature range, and a nonlinear response or a substantially nonlinear response within a second temperature range.

[0061] As used herein, the term "response ratio" of a vaporizable precursor may refer to a ratio of X:Y, where X is a change in thermal energy supplied to at least one tray (e.g., a change in temperature (°C)) and Y is a change in pressure of the vaporized precursor in the gas flow line (Torr). For example, a response ratio of 1:5 may refer to a vaporizable precursor that exhibits a 5 Torr increase or decrease in pressure in the gas flow line in response to a 1°C increase or decrease in temperature. The response ratio of the vaporizable precursor may be in the range of 1:0.1 to 1:500, or in any sub-range between 1:01 to 1:500. In some embodiments, for example, the response ratio of the vaporizable precursor may be in the range of 1:0.1 to 1:100, 1:1 to 1:100, 1:1 to 1:75, 1:1 to 1:50, 1:1 to 1:25, 1:1 to 1:20, 1:1 to 1:15, 1:1 to 1:10, or 1:1 to 1:5.

[0062] The pressure of the vaporized precursor in the gas flow line may be understood to exhibit a linear response or a substantially linear response to changes in temperature, wherein the vaporized precursor exhibits a constant response ratio across a given temperature range. The pressure of the vaporized precursor in the gas flow line may be understood to exhibit a non-linear response or a substantially non-linear response to changes in temperature, wherein the vaporized precursor exhibits two or more response ratios across a given temperature range.

[0063] A pressure range may include a pressure and a pressure tolerance. As used herein, the term "pressure tolerance" refers to an acceptable pressure variation relative to a set pressure. For example, for a pressure of 500 Torr and a pressure tolerance of ±5 Torr, a pressure range may be defined as 500 Torr ±5 Torr. That is, the pressure range may include pressures within a range of 495 Torr to 505 Torr.

[0064] The pressure range may include a pressure in the range of 100 Torr to 750 Torr. For example, in some embodiments, the pressure range may include a pressure in the range of 100 Torr to 750 Torr, 100 Torr to 700 Torr, 100 Torr to 650 Torr, 100 Torr to 600 Torr, 100 Torr to 550 Torr, 100 Torr to 500 Torr, 100 Torr to 450 Torr, 100 Torr to 400 Torr, 100 Torr to 350 Torr, 100 Torr to 300 Torr, 100 Torr to 250 Torr, 100 Torr to 200 Torr, 100 Torr to 150 Torr. , 150 Torr to 750 Torr, 200 Torr to 750 Torr, 250 Torr to 750 Torr, 300 Torr to 750 Torr, 350 Torr to 750 Torr, 400 Torr to 750 Torr, 450 Torr to 750 Torr, 500 Torr to 750 Torr, 550 Torr to 750 Torr, 600 Torr to 750 Torr, 650 Torr to 750 Torr, 700 Torr to 750 Torr, or any other sub-range between 100 Torr to 750 Torr.

[0065] The pressure range may include a pressure tolerance in the range of ±0.1 Torr to ±50 Torr. In some embodiments, the pressure range includes a pressure tolerance in the range of ±0.1 Torr to ±40 Torr, ±0.1 Torr to ±30 Torr, ±0.1 Torr to ±20 Torr, ±0.1 Torr to ±10 Torr, ±0.1 Torr to ±5 Torr, ±1 Torr to ±5 Torr, ±1 Torr to ±10 Torr, or ±1 Torr to ±20 Torr. In some embodiments, the pressure range includes a pressure tolerance of ±0.1 Torr, ±1 Torr, ±2 Torr, ±4 Torr, ±5 Torr, ±8 Torr, ±10 Torr, ±12 Torr, ±14 Torr, ±15 Torr, ±18 Torr, ±20 Torr, ±22 Torr, ±24 Torr, ±25 Torr, ±28 Torr, ±30 Torr, ±32 Torr, ±34 Torr, ±35 Torr, ±38 Torr, ±40 Torr, ±42 Torr, ±44 Torr, ±45 Torr, ±48 Torr, ±50 Torr, or any other pressure tolerance between ±1 Torr and ±50 Torr.

[0066] The amount of thermal energy supplied to the at least one tray may be adjusted to be sufficient to maintain a flow rate of the vaporized precursor in the gas flow line within a flow rate range.

[0067] The flow rate range may include a flow rate and a flow rate tolerance. As used herein, the term "flow rate tolerance" refers to an acceptable flow rate variation relative to a set flow rate. For example, for a flow rate of 500 sccm and a flow rate tolerance of ±5 sccm, the flow rate range may be defined as 500 sccm ±5 sccm. That is, the flow rate range may include a flow rate within a range of 495 sccm to 505 sccm.

[0068] The flow rate of the evaporated precursor may be a flow rate in the range of 50 sccm to 750 sccm. For example, in some embodiments, the flow rate of the evaporated precursor may be a flow rate in the range of 50 sccm to 750 sccm, 50 sccm to 700 sccm, 50 sccm to 650 sccm, 50 sccm to 600 sccm, 50 sccm to 550 sccm, 50 sccm to 500 sccm, 50 sccm to 450 sccm, 50 sccm to 400 sccm, 50 sccm to 350 sccm, 50 sccm to 300 sccm, 50 sccm to 250 sccm, 50 sccm to 200 sccm, 50 sccm to 150 sccm, 50 sccm to 100 sccm, 100 sccm to 750 sccm, 150 sccm to 750 sccm, 150 sccm to 800 sccm, 100 sccm to 900 sccm, 100 sccm to 15 ... sccm, 500sccm to 750sccm, 550sccm to 750sccm, 500sccm to 700sccm, 550sccm to 700sccm, 600sccm to 700sccm, 500sccm to 650sccm, 500sccm to 600sccm, or any other sub-range between 50sccm and 750sccm.

[0069] The flow rate range may include a flow rate tolerance in the range of ±0.1 sccm to ±50 sccm. In some embodiments, the flow rate range includes a flow rate tolerance of ±0.1 sccm, ±1 sccm, ±2 sccm, ±4 sccm, ±5 sccm, ±8 sccm, ±10 sccm, ±12 sccm, ±14 sccm, ±15 sccm, ±18 sccm, ±20 sccm, ±22 sccm, ±24 sccm, ±25 sccm, ±28 sccm, ±30 sccm, ±32 sccm, ±34 sccm, ±35 sccm, ±38 sccm, ±40 sccm, ±42 sccm, ±44 sccm, ±45 sccm, ±48 sccm, ±50 sccm, or any other flow rate tolerance between ±1 sccm and ±50 sccm.

[0070] Figure 2 is a schematic diagram of a system 200 for controlling precursor delivery, according to some embodiments.

[0071] like Figure 2, the system 200 may include a precursor delivery container 202 disposed in the interior volume of the housing 204, which is optional. The precursor delivery container 202 may contain a vaporizable precursor on at least one tray. A thermal energy unit 206 may be in thermal communication with the precursor delivery container 202 for supplying an amount of thermal energy sufficient to vaporize the vaporizable precursor to the at least one tray. The vaporized precursor may be dispensed from the precursor delivery container 202 to a tool 208, such as, for example but not limited to, a semiconductor processing tool, via a gas flow line 210. A sensor 212 and a flow control device 214 may be fluidly disposed in the gas flow line 210 between the precursor delivery container 202 and the tool 208. It should be understood that other configurations may be employed without departing from the scope of the present disclosure.

[0072] The precursor delivery container 202 may include a vaporizable precursor on at least one tray disposed in the interior volume of the precursor delivery container 202. In some embodiments, the at least one tray includes a plurality of trays. In some embodiments, the plurality of trays are stacked in the interior volume of the precursor delivery container 202. In some embodiments, the plurality of trays are mounted in the interior volume of the precursor delivery container 202 (e.g., fixed, fastened, etc. to the interior surface of the precursor delivery container 202). In some embodiments, the plurality of trays are suspended in the interior volume of the precursor delivery container 202. In some embodiments, the plurality of trays are expandable such that one or more trays are wedged (e.g., by applying pressure or other force) against an interior surface in the interior volume of the precursor delivery container 202 in an expanded configuration.

[0073] It is understood that the precursor delivery vessel 202 may include additional elements, particularly such as, for example but not limited to, at least one of a carrier gas inlet for introducing a carrier gas, an inlet, an outlet, a control valve, a pressure regulator, or any combination thereof.

[0074] The thermal energy unit 206 can be configured to supply a certain amount of thermal energy (e.g., in the form of heat) sufficient to vaporize the vaporizable material to at least one tray of the precursor delivery container 202. The thermal energy unit 206 is not particularly limited, as long as the at least one tray is brought to a desired temperature level and maintained at this temperature level in an accurate and reliable manner. In some embodiments, the thermal energy unit 206 is a heat sleeve that encases the precursor delivery container 202. In some embodiments, the thermal energy unit 206 is a belt heater wrapped around the precursor delivery container 202. In some embodiments, the thermal energy unit 206 is a block heater having a shape that covers at least a portion (or a major portion) of the outer surface of the precursor delivery container 202. In some embodiments, the thermal energy unit 206 is a heat transfer fluid that is in fluid communication with the precursor delivery container 202 (e.g., via a heat exchanger unit).

[0075] The gas flow line 210 may fluidly connect the precursor delivery container 202 to the tool 208. The gas flow line 210 may include a tube, conduit, or other structure defining a lumen through which the vaporized precursor (and in some embodiments, the carrier gas) may flow. The sensor 212 and the flow control device 214 may be fluidly disposed in the gas flow line 210 between the precursor delivery container 202 and the tool 208. The sensor 212 may include any device capable of sensing (e.g., measuring) a property of the vaporized precursor in the gas flow line 210. For example, in some embodiments, the property includes at least one of a pressure of the vaporized precursor (e.g., and in some embodiments, the carrier gas), a flow rate of the vaporized precursor (e.g., and in some embodiments, the carrier gas), a temperature of the vaporized precursor (e.g., and in some embodiments, the carrier gas), or any combination thereof. In some embodiments, the flow control device 214 includes (among other flow control devices) a mass flow controller.

[0076] The system 200 may further include a control device 216. In some embodiments, the control device may be configured to receive a signal for monitoring a characteristic of the vaporized precursor in the gas flow line 210. In some embodiments, the control device may be configured to transmit a signal for controlling a characteristic of the vaporized precursor in the gas flow line 210. For example, in some embodiments, the control device 216 receives a signal from the sensor 212 on a continuous or intermittent basis over time. In some embodiments, the control device 216 transmits a signal to the thermal energy unit 206 in response to the signal received from the sensor 212. In some embodiments, the control device 216 may be configured to monitor and control a pressure, flow rate, or another characteristic of the vaporized precursor in the gas flow line by receiving a signal from the sensor 212 and transmitting the signal to the thermal energy unit 206.

[0077] In some embodiments, for example, the control device 216 is configured to maintain the pressure in the gas flow line 210 within a certain pressure range. If the pressure of the vaporized precursor in the gas flow line 210 is measured to be outside the pressure range, the control device 216 can be configured to adjust the amount of thermal energy supplied to the at least one tray to an amount sufficient to maintain the pressure of the vaporized precursor (and in some embodiments, the carrier gas) in the gas flow line 210 within the certain pressure range. For example, the control device 216 can be configured to increase the thermal energy supplied to the at least one tray in response to the measured pressure being less than the lower limit of the pressure range. The control device 216 can be configured to decrease the amount of thermal energy supplied to the at least one tray (or stop supplying the thermal energy) in response to the measured pressure being greater than the upper limit of the pressure range.

[0078] In some embodiments, the control device 216 may be configured to monitor and control other parameters, such as, for example but not limited to, the flow rate of the vaporized precursor (and in some embodiments, the carrier gas) in the gas flow line. For example, in some embodiments, the control device is configured to maintain the flow rate of the vaporized precursor (and in some embodiments, the carrier gas) in the gas flow line within a flow rate range. If the flow rate of the vaporized precursor in the gas flow line 210 is measured to be outside the flow rate range, the control device 216 may be configured to adjust the amount of thermal energy supplied to the at least one tray. For example, the control device 216 may be configured to increase the amount of thermal energy supplied to the at least one tray in response to measuring a flow rate that is less than a lower limit of the flow rate range. The control device 216 may be configured to decrease the amount of thermal energy supplied to the at least one tray in response to measuring a flow rate that is greater than an upper limit of the flow rate range.

[0079] In some embodiments, the control device 216 is a special-purpose computer device (e.g., the control device 216 is not a general-purpose computer) that includes at least one of a processor, a memory, a program, or any combination thereof. In some embodiments, the program includes an adaptive or intelligent program configured to adjust the supply of thermal energy without human intervention.

[0080] The tool 208 may include any process that utilizes a vapor precursor. In some embodiments, for example, the tool 208 may include a semiconductor manufacturing process. In some embodiments, the tool 208 includes at least one of the following processes: ion implantation, epitaxial growth, plasma etching, reactive ion etching, metallization, physical vapor deposition, chemical vapor deposition, plasma deposition, photolithography, cleaning, doping, or any combination thereof. In some embodiments, these tools are part of a manufacturing process for semiconductor devices and products, microelectronic devices and products, photovoltaic devices and products, or flat display devices and products, etc. Other tools may be used herein without departing from the present disclosure.

[0081] The system 200 and components of the system 200 may be provided in other arrangements and configurations, with additional elements (or fewer elements). The additional elements may include additional flow lines and flow circuit system components, such as, for example but not limited to, flow path selectors; flow control valves; mass flow controllers; pressure regulators; flow restriction orifice elements; thermocouples; monitoring and control devices (e.g., such as process gas monitoring instruments for monitoring process conditions (e.g., for example but not limited to pressure, temperature, flow rate, concentration, etc.) of gaseous precursors dispensed from the precursor delivery containers); leak detection devices; automatic cleaning equipment and associated actuators for cleaning the system, the precursor delivery container, or any component thereof when a leak from one or more of the precursor delivery container and the system is detected; additional heaters for inputting thermal energy to the precursor delivery container and its contents; at least one of additional heaters for maintaining temperatures in the exhaust line and the delivery line; or any combination thereof.

[0082] aspect

[0083] Various aspects are described below. It should be understood that any one or more of the features listed in the following aspects can be combined with any one or more other aspects.

[0084] Aspect 1. A method comprising:

[0085] obtaining a precursor delivery container containing a vaporizable precursor on at least one tray,

[0086] wherein the at least one tray comprises a -1 K -1 The thermal conductivity of the material;

[0087] supplying an amount of thermal energy to the at least one tray sufficient to vaporize the vaporizable precursor;

[0088] dispensing the vaporized precursor from the precursor delivery container to a gas flow line; and

[0089] An amount of thermal energy supplied to the at least one tray is adjusted to be sufficient to maintain a pressure of the vaporized precursor in the gas flow line within a pressure range.

[0090] Aspect 2. The method according to aspect 1, wherein the vaporizable precursor comprises at least one of a metal oxyhalide, a metal halide, or any combination thereof.

[0091] Aspect 3. The method according to any one of aspects 1 to 2, wherein the vaporizable precursor comprises MoO 2 Cl 2 、MoOCl 4 , WO 2 Cl 2WOCl 4 or at least one of any combination thereof.

[0092] Aspect 4. The method according to any one of aspects 1 to 3, wherein the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

[0093] Aspect 5. The method according to any one of aspects 1 to 4, wherein the at least one tray comprises a 25W m -1 K -1 Up to 470W m -1 K -1 The thermal conductivity of the material.

[0094] Aspect 6. The method according to any one of aspects 1 to 5, wherein the pressure range includes a pressure in the range of 100 Torr to 750 Torr.

[0095] Aspect 7. The method according to any one of aspects 1 to 6, wherein the pressure range includes a pressure tolerance in the range of ±1 Torr to ±5 Torr.

[0096] Aspect 8. The method according to any one of aspects 1 to 7, wherein the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

[0097] Aspect 9. The method according to any one of aspects 1 to 8, wherein the flow rate of the vaporized precursor in the gas flow line is in the range of 50 sccm to 600 sccm.

[0098] Aspect 10. The method of any one of aspects 1 to 9, wherein the vaporized precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range.

[0099] Aspect 11. A system comprising:

[0100] a precursor delivery container containing a vaporizable precursor on at least one tray,

[0101] wherein the at least one tray comprises a -1 K -1 The thermal conductivity of the material;

[0102] a heater configured to supply an amount of thermal energy to the at least one tray to produce a vaporized precursor from the vaporizable precursor;

[0103] a gas flow line configured to deliver the vaporized precursor from the precursor delivery container to a semiconductor processing tool; and

[0104] A control device is configured to adjust the amount of thermal energy supplied to the at least one tray to be sufficient to maintain the pressure of the vaporized precursor in the gas flow line within a certain pressure range.

[0105] Aspect 12. The system of aspect 11, wherein the vaporizable precursor comprises at least one of a metal oxyhalide, a metal halide, or any combination thereof.

[0106] Aspect 13. The system according to any one of aspects 11 to 12, wherein the vaporizable precursor comprises MoO 2 Cl 2 、MoOCl 4 , WO 2 Cl 2 WOCl 4 or at least one of any combination thereof.

[0107] Aspect 14. The system according to any one of aspects 11 to 13, wherein the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

[0108] Aspect 15. The system according to any one of aspects 11 to 14, wherein the at least one tray comprises a 25W m -1 K -1 Up to 470W m -1 K -1 The thermal conductivity of the material.

[0109] Aspect 16. The system of any one of aspects 11 to 15, wherein the pressure range includes a pressure in the range of 100 Torr to 750 Torr.

[0110] Aspect 17. The system of any one of aspects 11 to 16, wherein the pressure range includes a pressure tolerance within a range of ±1 Torr to ±5 Torr.

[0111] Aspect 18. The system according to any one of aspects 11 to 17, wherein the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

[0112] Aspect 19. The system according to any one of aspects 11 to 18, wherein the flow rate of the vaporized precursor in the gas flow line is in the range of 50 sccm to 600 sccm.

[0113] Aspect 20. The system of any one of aspects 11 to 19, wherein the vaporized precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range.

[0114] It is to be understood that changes in detail, especially in the materials of construction employed and the shapes, sizes and arrangements of parts may be made without departing from the scope of the present disclosure.This specification and described embodiments are examples, with the true scope and spirit of the disclosure being indicated by the following claims.

[0115] Example 1

[0116] A precursor delivery container is obtained that is fluidly coupled to a gas flow line. The gas flow line includes a pressure sensor for measuring the pressure of a vaporized precursor flowing through the gas flow line. The gas flow line also includes a flow meter for measuring the flow rate of the vaporized precursor flowing through the gas flow line. The tray of the precursor delivery container is loaded with MoO as a vaporizable precursor. 2 Cl 2 The tray is heated to a temperature sufficient to evaporate the vaporizable precursor. The pressure of the vaporized precursor is monitored for 30 minutes while adjusting the heat supplied to the tray. We have found that by adjusting the heat supplied to the tray, the flow rate and the pressure of the vaporized precursor in the gas flow line are maintained above 600 seem and 500 Torr, respectively.

Claims

1. A method comprising: obtaining a precursor delivery container containing a vaporizable precursor on at least one tray, wherein the at least one tray comprises a -1 K -1 The thermal conductivity of the material; supplying an amount of thermal energy to the at least one tray sufficient to vaporize the vaporizable precursor; dispensing the vaporized precursor from the precursor delivery container to a gas flow line; and An amount of thermal energy supplied to the at least one tray is adjusted to be sufficient to maintain a pressure of the vaporized precursor in the gas flow line within a pressure range. 2 . The method of claim 1 , wherein the vaporizable precursor comprises at least one of a metal oxyhalide, a metal halide, or any combination thereof.

3. The method of claim 1 or 2, wherein the vaporizable precursor comprises at least one of MoO2Cl2, MoOCl4, WO2Cl2, WOCl4, or any combination thereof.

4. The method of any one of claims 1 to 3, wherein the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

5. The method according to any one of claims 1 to 4, wherein the at least one tray comprises a -1 K -1 Up to 470W m -1 K -1 The thermal conductivity of the material.

6. The method of any one of claims 1 to 5, wherein the pressure range comprises pressures in the range of ±100 Torr to ±750 Torr.

7. The method of any one of claims 1 to 6, wherein the pressure range includes a pressure tolerance in the range of ±1 Torr to ±5 Torr.

8. The method of any one of claims 1 to 7, wherein the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

9. The method of any one of claims 1 to 8, wherein a flow rate of the vaporized precursor in the gas flow line is in the range of 50 seem to 600 seem.

10. The method of any one of claims 1 to 9, wherein the evaporated precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range.

11. A system comprising: a precursor delivery container containing a vaporizable precursor on at least one tray, wherein the at least one tray comprises a -1 K -1 The thermal conductivity of the material; a heater configured to supply an amount of thermal energy to the at least one tray to produce a vaporized precursor from the vaporizable precursor; a gas flow line configured to deliver the vaporized precursor from the precursor delivery container to a semiconductor processing tool; and A control device is configured to adjust the amount of thermal energy supplied to the at least one tray to be sufficient to maintain the pressure of the vaporized precursor in the gas flow line within a certain pressure range.

12. The system of claim 11, wherein the vaporizable precursor comprises at least one of a metal oxyhalide, a metal halide, or any combination thereof.

13. The system of claim 11 or 12, wherein the vaporizable precursor comprises at least one of MoO2Cl2, MoOCl4, WO2Cl2, WOCl4, or any combination thereof.

14. The system of any one of claims 11 to 13, wherein the at least one tray comprises at least one of a ceramic material, a polymeric material, a metallic material, or any combination thereof.

15. The system of any one of claims 11 to 14, wherein the at least one tray comprises a 25 W m -1 K -1 Up to 470W m -1 K -1 The thermal conductivity of the material.

16. The system of any one of claims 11 to 15, the pressure range comprising pressures within a range of ±100 Torr to ±750 Torr.

17. The system of any one of claims 11 to 16, wherein the pressure range includes a pressure tolerance in the range of ±1 Torr to ±5 Torr.

18. The system of any one of claims 11 to 17, wherein the evaporated precursor is produced at a temperature in the range of 100°C to 250°C.

19. The system of any one of claims 11 to 18, wherein a flow rate of the vaporized precursor in the gas flow line is in the range of 50 seem to 600 seem.

20. The system of any one of claims 11-19, wherein the vaporized precursor exhibits a non-linear response to temperature changes when having a pressure within the pressure range.

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