Method and system for regulating and controlling capacitance sensitivity of monocrystalline silicon wafer based on irradiation property
By establishing a single crystal silicon model and regulating Young's modulus using irradiation treatment, the problem of sensitivity regulation of single crystal silicon capacitors is solved, and the performance of capacitors is accurately adjusted in the irradiation environment is achieved, with the advantages of low cost and high efficiency.
Patent Information
- Application Number
- CN202411312411.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-20
- Publication Date
- 2025-01-03
AI Technical Summary
The prior art cannot effectively regulate the sensitivity of single crystal silicon capacitors, especially in an irradiated environment, where vacancy defects caused by irradiation damage affect the mechanical properties but are difficult to control.
By establishing a single crystal silicon model, the model is irradiated by high-energy particles of different irradiation doses, the relationship curve between the number of defects and the irradiation dose is obtained, combined with the stress and strain curve, linear fitting is obtained to obtain the Young's modulus, and then the target defect is regulated. Number and irradiation dose, a single crystal silicon capacitor with a target Young's modulus was prepared.
The sensitivity adjustment of single crystal silicon capacitors is achieved, with low cost, high efficiency and sensitivity, and the capacitance output value can be accurately controlled.
Smart Images
Figure CN119249839A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of material radiation damage, and in particular to a method and system for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties. Background Art
[0002] Single crystal silicon is a material formed by silicon atoms in a specific arrangement. It has a high degree of order and purity and is an important component of semiconductor materials. At the same time, single crystal silicon is widely used in solar cells, integrated circuits, semiconductor devices, optical devices and biomedical fields due to its excellent properties such as electrical and thermal conductivity, radiation resistance, high temperature resistance, and high infrared transmittance and refractive index.
[0003] In the irradiation environment, there are a large number of high-energy particles, which can cause damage to semiconductor devices, including ionization damage and displacement damage. Among them, ionization damage is to break the energy band balance in the semiconductor material to produce electron and hole carriers; displacement damage is due to the high kinetic energy of high-energy particles. High-speed particles collide elastically or inelastically with semiconductor atoms. The collided semiconductor atoms are knocked away from their original crystal positions by high-energy particles and form a vacancy defect at the original position.
[0004] The vacancy defects generated after irradiation cause the mechanical properties of single-crystal silicon materials to change. At the same time, this change follows certain scientific laws, that is, as the irradiation dose changes, the vacancy defects generated in the single-crystal silicon material will change accordingly, and the mechanical properties of the single-crystal silicon material will also change accordingly.
[0005] Due to the importance of the mechanical properties of silicon single crystals, researchers have done a lot of work on the mechanical properties of single crystal silicon and the effects of impurities on the mechanical properties of single crystal silicon in the past few decades. However, existing technologies cannot effectively control the sensitivity of single crystal silicon capacitors. Summary of the invention
[0006] To this end, the present invention provides a method and system for regulating the sensitivity of single crystal silicon wafer capacitors based on radiation properties, which can regulate the Young's modulus of the capacitor by controlling the vacancy defect ratio generated after radiation, and regulate the capacitor output value by regulating the Young's modulus, thereby achieving sensitivity regulation of single crystal silicon capacitors.
[0007] In order to solve the above technical problems, the present invention provides a method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties, comprising:
[0008] Establish a single crystal silicon model;
[0009] The single crystal silicon model is irradiated by high-energy particles with different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose;
[0010] After stretching the irradiated single crystal silicon model, a stress-strain curve is obtained;
[0011] Performing linear fitting on the stress-strain curve to obtain the Young's modulus of the single crystal silicon;
[0012] Based on the Young's modulus of the single crystal silicon under different numbers of defects, a relationship curve between the number of defects and the Young's modulus of the single crystal silicon is obtained;
[0013] For a single crystal silicon slice having a target Young's modulus required for a single crystal silicon capacitor, based on a relationship curve between the number of defects and the Young's modulus of the single crystal silicon, obtaining a target number of defects in the single crystal silicon slice;
[0014] Determining a target irradiation dose for irradiating the single crystal silicon wafer based on a target defect number of the single crystal silicon wafer and a relationship curve between the defect number and the irradiation dose;
[0015] A single crystal silicon capacitor is prepared according to the target irradiation dose of the single crystal silicon slice.
[0016] In one embodiment of the present invention, the establishing of a single crystal silicon model comprises:
[0017] Using non-equilibrium molecular dynamics simulation and lammps software to perform modeling, the single crystal silicon model is obtained;
[0018] The size of the single crystal silicon model is set to Lattice constant
[0019] Periodic boundary conditions are set in all directions of the single-crystal silicon model to avoid flying or missing atoms.
[0020] In one embodiment of the present invention, the irradiation treatment of the single crystal silicon model by high-energy particles with different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose includes:
[0021] Use the create_atoms command in the lammps software to uniformly generate interstitial atoms and vacancy defects in the model by randomly adding atoms, thereby constructing a single crystal silicon model with different numbers of defects;
[0022] The irradiation dose is determined based on the initial kinetic energy of the high-energy particles to obtain a relationship curve between the number of defects and the irradiation dose.
[0023] In one embodiment of the present invention, the step of determining the irradiation dose based on the initial kinetic energy of the high-energy particles to obtain a curve of the relationship between the number of defects and the irradiation dose includes:
[0024] According to the NRT-DPA equation, the number of defects N is calculated d :
[0025]
[0026] Among them, the displacement efficiency k is 0.8, which is independent of the initial kinetic energy, target material and temperature; E d is the delocalization threshold energy of single crystal silicon material, which is 17 eV; N d is the number of defects; E is the initial kinetic energy;
[0027] By changing the initial kinetic energy E, different defect numbers N are obtained. d , thereby establishing the relationship between the number of defects and irradiation dose, and drawing the corresponding curve.
[0028] In one embodiment of the present invention, the step of obtaining a stress-strain curve after stretching the irradiated single crystal silicon model comprises:
[0029] Performing NVT relaxation on the single crystal silicon model;
[0030] Performing uniaxial stretching on the relaxed single crystal silicon model to obtain stress-strain data;
[0031] Repeat the above steps, perform outlier removal and averaging processing on the stress-strain data obtained multiple times, and obtain the stress-strain curve.
[0032] In one embodiment of the present invention, NVT relaxation of the single crystal silicon model includes: setting the time step to 0.001fs and running 15,000 steps to allow the single crystal silicon model to reach thermodynamic equilibrium at a constant particle number, volume and temperature.
[0033] In one embodiment of the present invention, the uniaxial stretching of the relaxed single crystal silicon model includes: setting the stretching direction to the x direction, setting the stretching rate to 0.00005s, maintaining the time step to 0.001fs, and running for 13000 steps.
[0034] In one embodiment of the present invention, the Young's modulus of the single crystal silicon under different numbers of defects is used to obtain a relationship curve between the number of defects and the Young's modulus of the single crystal silicon, including:
[0035] The stress-strain curve is linearly fitted to obtain the Young's modulus of the single crystal silicon, wherein the calculation formula of the Young's modulus is as follows:
[0036]
[0037] Where E represents Young's modulus, σ represents normal stress, and ε represents normal strain;
[0038] Repeatedly stretch single crystal silicon models with different numbers of defects and calculate the corresponding Young's modulus;
[0039] The Young's modulus under different defect numbers is plotted as a curve to obtain a relationship curve between the defect number and the Young's modulus of the single crystal silicon.
[0040] The present invention also provides a system for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties, comprising:
[0041] Modeling module, used to build single crystal silicon model;
[0042] A first relationship curve module is used to irradiate the single crystal silicon model with high-energy particles of different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose;
[0043] A stress-strain curve acquisition module, used for acquiring a stress-strain curve after performing a stretching process on the irradiated single crystal silicon model;
[0044] A Young's modulus acquisition module, used for performing linear fitting on the stress-strain curve to obtain the Young's modulus of the single crystal silicon;
[0045] A second relationship curve acquisition module, configured to obtain a relationship curve between the number of defects and the Young's modulus of the single crystal silicon based on the Young's modulus of the single crystal silicon under different numbers of defects;
[0046] A single crystal silicon slice defect number acquisition module, for obtaining a target defect number of the single crystal silicon slice of a target Young's modulus required for a single crystal silicon capacitor based on a relationship curve between the defect number and the Young's modulus of the single crystal silicon;
[0047] The irradiation dose determination module is used to determine the target irradiation dose of the single crystal silicon slice based on the target defect number of the single crystal silicon slice and the relationship curve between the defect number and the irradiation dose.
[0048] The above technical solution of the present invention has the following advantages compared with the prior art:
[0049] The method and system for regulating the sensitivity of the capacitor of a single-crystal silicon wafer based on the irradiation property described in the present invention irradiates the single-crystal silicon with high-energy particles, and utilizes a large number of high-energy particles contained in the irradiation environment to generate vacancy defects in the single-crystal silicon material, resulting in changes in mechanical properties such as Young's modulus. The Young's modulus change value is associated with the radiation dose parameter. By controlling the size of the irradiation dose, the ratio of vacancy defects generated after irradiation is controlled to regulate the Young's modulus of the capacitor. By regulating the Young's modulus modulus to regulate the output value of the capacitor, the sensitivity of the single-crystal silicon capacitor can be adjusted. Regulating the sensitivity of the single-crystal silicon capacitor by irradiation damage has the advantages of low cost, high efficiency, and high sensitivity. BRIEF DESCRIPTION OF THE DRAWINGS
[0050] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.
[0051] Figure 1 The present invention is a flow chart of a method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties.
[0052] Figure 2 This is a schematic diagram of the principle of a single crystal silicon differential capacitor.
[0053] Figure 3 To use lammps to model and generate a model diagram of single crystal silicon containing defects, the defect ratios are 0.01%, 0.1%, 1%, and 10% respectively.
[0054] Figure 4 This is a curve diagram showing the relationship between the number of defects and the irradiation dose.
[0055] Figure 5 This is a curve diagram showing the relationship between the number of defects and Young's modulus of single crystal silicon.
[0056] Figure 6 This is the stress deformation strain distribution diagram of the silicon membrane. DETAILED DESCRIPTION
[0057] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.
[0058] In the present invention, "several" means one or more, "multiple" means more than two, "greater than", "less than", "exceed" and the like are understood to exclude the number itself; "above", "below", "within" and the like are understood to include the number itself. In the description of the present invention, if there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.
[0059] Example 1
[0060] Reference Figure 1 As shown, a method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to an embodiment of the present invention includes:
[0061] S1. Establish a single crystal silicon model.
[0062] Specifically, non-equilibrium molecular dynamics simulation is adopted and lammps software is used for modeling to obtain the single crystal silicon model; by performing molecular dynamics simulation with lammps software, a model of single crystal silicon can be established at the atomic scale to simulate its real physical behavior.
[0063] The size of the single crystal silicon model is set to (Angstroms), the lattice constant of single crystal silicon
[0064] Periodic boundary conditions are set in all directions of the single crystal silicon model to avoid the problem of atoms flying out or missing atoms.
[0065] S2. The single crystal silicon model is irradiated by high-energy particles with different irradiation doses, so that the particles collide with the atoms in the single crystal silicon, causing the atoms in the lattice to be out of place, simulating the damage to the material caused by irradiation in reality, and obtaining the relationship curve between the number of defects and the irradiation dose. The irradiation dose determines the number of defects generated in the material by high-energy particles. In this embodiment, high-energy particles with an energy of 10kev are used to bombard the single crystal silicon model, and the simulation is repeated iteratively to obtain models with different irradiation doses. The temperature of the single crystal silicon model annealing treatment is set to 300K.
[0066] Specifically, the create_atoms command is used in the lammps software to uniformly generate interstitial atoms and vacancy defects in the model by randomly adding atoms, thereby constructing a single crystal silicon model with different numbers of defects; Figure 3 As shown, a model diagram of single crystal silicon containing defects is generated using lammps modeling, and the defect ratios are 0.01%, 0.1%, 1%, and 10% respectively.
[0067] The irradiation dose is determined based on the initial kinetic energy of the high-energy particles to obtain a relationship curve between the number of defects and the irradiation dose.
[0068] According to the NRT-DPA equation, the number of defects N is calculated d :
[0069]
[0070] Among them, the displacement efficiency k is 0.8, which is independent of the initial kinetic energy, target material and temperature; E d is the delocalization threshold energy of single crystal silicon material, which is 17 eV; N d is the number of defects; E is the initial kinetic energy;
[0071] By changing the initial kinetic energy E, different defect numbers N are obtained. d , thereby establishing the relationship between the number of defects and the irradiation dose, and drawing the corresponding curve. In this embodiment, the obtained curve of the relationship between the number of defects and the irradiation dose is referred to Figure 4 shown.
[0072] S3, after stretching the irradiated single crystal silicon model, obtaining a stress-strain curve. Specifically comprising:
[0073] NVT relaxation is performed on the single crystal silicon model; NVT relaxation is to achieve thermodynamic equilibrium of the model through molecular dynamics simulation under the conditions of fixed particle number (N), volume (V), and temperature (T). After relaxation, the atoms in the model are in a stable arrangement state, eliminating the unnatural effects in the initial conditions. By setting the time step to 0.001fs and running 15000 steps, the single crystal silicon model can reach thermodynamic equilibrium under constant particle number, volume and temperature;
[0074] The relaxed single crystal silicon model is subjected to uniaxial stretching to obtain stress-strain data. Uniaxial stretching is a commonly used method in simulation experiments to study the mechanical properties of materials. The stretching direction is set to the x direction, the stretching rate is set to 0.00005s, the time step is kept at 0.001fs, and 13000 steps are run;
[0075] Repeat the above steps, remove outliers and average the stress-strain data obtained multiple times to obtain the stress-strain curve. Outliers can be identified by statistical methods, such as calculating the mean and standard deviation, and stress values exceeding a certain standard deviation range are considered outliers. Use strain as the x-axis and the averaged stress value as the y-axis to draw the final stress-strain curve.
[0076] S4. Linearly fit the stress-strain curve to obtain the Young's modulus of the single crystal silicon. Young's modulus (E) is an important parameter to describe the elastic properties of the material, which reflects the ability of the material to resist deformation during the elastic deformation stage. In the elastic range, Young's modulus is equal to the ratio of stress to strain. The data of the selected linear elastic section are linearly regressed and fitted. During the fitting process, algorithms such as the least squares method can be used, and the slope obtained by fitting is the Young's modulus of the single crystal silicon.
[0077] S5. Based on the Young's modulus of the single crystal silicon under different numbers of defects, a relationship curve between the number of defects and the Young's modulus of the single crystal silicon is obtained.
[0078] Specifically include:
[0079] The stress-strain curve is linearly fitted to obtain the Young's modulus of the single crystal silicon, wherein the calculation formula of the Young's modulus is as follows:
[0080]
[0081] Where E represents Young's modulus, σ represents normal stress, and ε represents normal strain;
[0082] Repeatedly stretch single crystal silicon models with different numbers of defects and calculate the corresponding Young's modulus;
[0083] The Young's modulus under different defect numbers is plotted as a curve to obtain a relationship curve between the defect number and the Young's modulus of the single crystal silicon. Figure 5 As shown in Figure 2, it can be seen that the increase in the number of defects will reduce the Young's modulus. In the design of capacitors, the sensitivity of the capacitor is closely related to the Young's modulus of the single crystal silicon wafer. By controlling the Young's modulus of the wafer, the sensitivity of the capacitor can be adjusted to meet different application requirements.
[0084] S6. For a single crystal silicon slice having a Young's modulus required for a single crystal silicon capacitor (product), based on a relationship curve between the number of defects and the Young's modulus of the single crystal silicon, obtain a target number of defects for the single crystal silicon slice.
[0085] S7. Determine a target irradiation dose for irradiating the single crystal silicon wafer based on a target defect number of the single crystal silicon wafer and a relationship curve between the defect number and the irradiation dose.
[0086] It is understandable that by determining the target number of defects, the corresponding target irradiation dose can be found through the relationship curve between the number of defects and the irradiation dose. Then, according to the target irradiation dose of the single crystal silicon wafer, an irradiation test is performed to prepare a single crystal silicon capacitor that meets the mechanical property requirements.
[0087] Therefore, once the target irradiation dose is determined, this dose can be applied to a single crystal silicon wafer in an experiment where the wafer is irradiated with high energy particles to produce the expected number of defects in the single crystal silicon wafer.
[0088] Reference Figure 2As shown in the figure, the principle diagram of the single crystal silicon differential capacitor, when external pressure is applied to the single crystal silicon capacitor, the thin film will deform. This deformation will change the distance between the two electrodes of the capacitor, thereby changing the capacitance value, and the two capacitance values can be output through the deformation of the middle single crystal silicon pressure-sensitive film. That is, by controlling the Young's modulus of the single crystal silicon thin film, the output capacitance value of the capacitor can be accurately controlled, thereby achieving the adjustment of the sensitivity of the single crystal silicon capacitor.
[0089] Reference Figure 6 The figure shows the strain distribution diagram of the bending deformation of the silicon film (with four sides fixed). The output value of the single crystal silicon capacitor can be obtained by the following formula:
[0090]
[0091] Wherein, S is the cross-sectional area of the gap between the silicon diaphragm and the capacitance measuring electrode, and T is the thickness of the gap.
[0092] Through the above method, single crystal silicon can be irradiated with high-energy particles of different doses to control the vacancy defects generated after irradiation. These defects change the Young's modulus of single crystal silicon, thereby regulating the output value of the capacitor, and the capacitance sensitivity is directly related to the irradiation dose, achieving a precise control effect.
[0093] Example 2
[0094] Based on the same inventive concept, this embodiment provides a system for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties. The principle of solving the problem is similar to the method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties, and the repeated parts will not be repeated.
[0095] This embodiment provides a system for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties, including:
[0096] Modeling module, used to build single crystal silicon model;
[0097] A first relationship curve module is used to irradiate the single crystal silicon model with high-energy particles of different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose;
[0098] A stress-strain curve acquisition module, used for acquiring a stress-strain curve after performing a stretching process on the irradiated single crystal silicon model;
[0099] A Young's modulus acquisition module, used for performing linear fitting on the stress-strain curve to obtain the Young's modulus of the single crystal silicon;
[0100] A second relationship curve acquisition module, configured to obtain a relationship curve between the number of defects and the Young's modulus of the single crystal silicon based on the Young's modulus of the single crystal silicon under different numbers of defects;
[0101] A single crystal silicon slice defect number acquisition module, for obtaining a target defect number of the single crystal silicon slice of a target Young's modulus required for a single crystal silicon capacitor based on a relationship curve between the defect number and the Young's modulus of the single crystal silicon;
[0102] The irradiation dose determination module is used to determine the target irradiation dose of the single crystal silicon slice based on the target defect number of the single crystal silicon slice and the relationship curve between the defect number and the irradiation dose; and prepare a single crystal silicon capacitor according to the target irradiation dose of the single crystal silicon slice.
[0103] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.
[0104] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0105] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.
[0106] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.
[0107] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.
Claims
1. A method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties, characterized in that: include: Establish a single crystal silicon model; The single crystal silicon model is irradiated by high-energy particles with different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose; After stretching the irradiated single crystal silicon model, a stress-strain curve is obtained; Performing linear fitting on the stress-strain curve to obtain the Young's modulus of the single crystal silicon; Based on the Young's modulus of the single crystal silicon under different numbers of defects, a relationship curve between the number of defects and the Young's modulus of the single crystal silicon is obtained; For a single crystal silicon slice having a target Young's modulus required for a single crystal silicon capacitor, based on a relationship curve between the number of defects and the Young's modulus of the single crystal silicon, obtaining a target number of defects in the single crystal silicon slice; Based on the target number of defects of the single crystal silicon wafer and a relationship curve between the number of defects and the irradiation dose, a target irradiation dose of the single crystal silicon wafer is determined.
2. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 1, characterized in that: The method of establishing a single crystal silicon model comprises: Using non-equilibrium molecular dynamics simulation and lammps software to perform modeling, the single crystal silicon model is obtained; The size of the single crystal silicon model is set to Lattice constant Periodic boundary conditions are set in all directions of the single-crystal silicon model to avoid flying or missing atoms.
3. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 1, characterized in that: The single crystal silicon model is irradiated with high-energy particles of different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose, including: Use the create_atoms command in the lammps software to uniformly generate interstitial atoms and vacancy defects in the model by randomly adding atoms, thereby constructing a single crystal silicon model with different numbers of defects; The irradiation dose is determined based on the initial kinetic energy of the high-energy particles to obtain a relationship curve between the number of defects and the irradiation dose.
4. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 3, characterized in that: The step of determining the irradiation dose based on the initial kinetic energy of the high-energy particles to obtain a relationship curve between the number of defects and the irradiation dose includes: According to the NRT-DPA equation, the number of defects N is calculated d : Among them, the displacement efficiency k is 0.8, which is independent of the initial kinetic energy, target material and temperature; E d is the delocalization threshold energy of single crystal silicon material, which is 17eV; N d is the number of defects; E is the initial kinetic energy; By changing the initial kinetic energy E, different defect numbers N are obtained. d , thereby establishing the relationship between the number of defects and irradiation dose, and drawing the corresponding curve.
5. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 1, characterized in that: After the irradiated single crystal silicon model is stretched, a stress-strain curve is obtained, including: Performing NVT relaxation on the single crystal silicon model; Performing uniaxial stretching on the relaxed single crystal silicon model to obtain stress-strain data; Repeat the above steps, perform outlier removal and averaging processing on the stress-strain data obtained multiple times, and obtain the stress-strain curve.
6. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 5, characterized in that: The NVT relaxation of the single crystal silicon model includes: setting the time step to 0.001fs and running 15000 steps to make the single crystal silicon model reach thermodynamic equilibrium at a constant particle number, volume and temperature.
7. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 5, characterized in that: The uniaxial stretching of the relaxed single crystal silicon model includes: setting the stretching direction to the x direction, setting the stretching rate to 0.00005s, maintaining the time step to 0.001fs, and running for 13000 steps.
8. The method for regulating the capacitance sensitivity of a single crystal silicon wafer based on radiation properties according to claim 1, characterized in that: The Young's modulus of the single crystal silicon under different defect numbers is used to obtain a relationship curve between the number of defects and the Young's modulus of the single crystal silicon, including: The stress-strain curve is linearly fitted to obtain the Young's modulus of the single crystal silicon, wherein the calculation formula of the Young's modulus is as follows: Where E represents Young's modulus, σ represents normal stress, and ε represents normal strain; Repeatedly stretch single crystal silicon models with different numbers of defects and calculate the corresponding Young's modulus; The Young's modulus under different defect numbers is plotted as a curve to obtain a relationship curve between the defect number and the Young's modulus of the single crystal silicon.
9. A system for regulating the capacitance sensitivity of a single-crystal silicon wafer based on radiation properties, characterized in that: include: Modeling module, used to build single crystal silicon model; A first relationship curve module is used to irradiate the single crystal silicon model with high-energy particles of different irradiation doses to obtain a relationship curve between the number of defects and the irradiation dose; A stress-strain curve acquisition module, used for acquiring a stress-strain curve after performing a stretching process on the irradiated single crystal silicon model; A Young's modulus acquisition module, used for performing linear fitting on the stress-strain curve to obtain the Young's modulus of the single crystal silicon; A second relationship curve acquisition module, configured to obtain a relationship curve between the number of defects and the Young's modulus of the single crystal silicon based on the Young's modulus of the single crystal silicon under different numbers of defects; A single crystal silicon slice defect number acquisition module, for obtaining a target defect number of the single crystal silicon slice of a target Young's modulus required for a single crystal silicon capacitor based on a relationship curve between the defect number and the Young's modulus of the single crystal silicon; The irradiation dose determination module is used to determine the target irradiation dose of the single crystal silicon slice based on the target defect number of the single crystal silicon slice and the relationship curve between the defect number and the irradiation dose.