Structure and method for improving phase shift of radio frequency attenuator

Abstract

The invention provides a structure and method for improving phase shift of a radio frequency attenuator, and belongs to the technical field of signal transmission equipment, the structure comprises a plurality of attenuation modules connected in series, the attenuation modules are used for providing preset attenuation amount, and each attenuation module comprises a first transistor module and a second transistor module which are connected, when the first transistor module is turned on and the second transistor module is turned off, the attenuation module is in a reference state, when the first transistor module is turned off and the second transistor module is turned on, the attenuation module is in an attenuation state, the influence of the attenuation module on a signal is minimized in the reference state, and the attenuation module provides a preset attenuation amount in the attenuation state. An inductance module is connected between the first transistor module and the second transistor module, and the inductance module is used for compensating a circuit phase when the attenuation module is in an attenuation state. According to the radio frequency attenuator circuit structure, low additional phase shift can be kept, and meanwhile, signal insertion loss and attenuation are hardly influenced.

Description

Technical Field

[0001] The present invention relates to the technical field of signal transmission equipment, and in particular to a structure and method for improving phase shift of a radio frequency attenuator. Background Art

[0002] RF attenuators play a vital role in wireless communications, radar systems, test equipment, and other fields. Their main function is to adjust the power level of the signal. Traditional RF attenuators usually achieve the conversion between the reference state and the attenuated state by switching different signal transmission paths. These paths may include different resistors, capacitors, or inductors to achieve different degrees of signal attenuation.

[0003] However, the physical length and layout differences between different transmission paths will cause additional phase changes, namely additional phase shifts, when the signal switches between paths. This phase change will interfere with the phase integrity of the signal, thereby affecting the performance of the entire circuit system, especially in applications with extremely high phase accuracy requirements. For example, in high-speed data transmission or precision measurement systems, additional phase shifts may cause signal distortion, increased bit error rates and other problems. Summary of the invention

[0004] In view of the above problems, on the first aspect, an embodiment of the present invention provides a structure for improving the phase shift of a radio frequency attenuator, and the structure for improving the phase shift of a radio frequency attenuator includes: a plurality of attenuation modules connected in series, the attenuation module is used to provide a predetermined attenuation amount, the attenuation module includes a first transistor module and a second transistor module connected to each other, when the first transistor module is turned on and the second transistor module is turned off, the attenuation module is in a reference state, when the first transistor module is turned off and the second transistor module is turned on, the attenuation module is in an attenuation state, in the reference state, the influence of the attenuation module on the signal is minimized, and in the attenuation state, the attenuation module provides a predetermined attenuation amount, an inductance module is connected between the first transistor module and the second transistor module, and the inductance module is used to compensate for the circuit phase when the attenuation module is in the attenuation state.

[0005] In one embodiment, the structure for improving the phase shift of the RF attenuator also includes: a first transistor, a first resistor, a twentieth resistor and a first capacitor, the signal input end is connected to the drain of the first transistor; one end of the twentieth resistor is connected to the source of the first transistor, and the other end is connected to the ground; one end of the first resistor is connected to the gate of the first transistor, and the other end is used to connect a first control signal; one end of the first capacitor is connected to the source of the first transistor, and the other end is connected to the ground.

[0006] In one embodiment, the structure for improving the phase shift of the RF attenuator also includes: a second transistor, a second resistor, a twenty-first resistor and a second capacitor, the signal input end is connected to the drain of the second transistor; one end of the twenty-first resistor is connected to the source of the second transistor, and the other end is connected to the ground; one end of the second resistor is connected to the gate of the second transistor, and the other end is used to connect the second control signal; one end of the second capacitor is connected to the source of the second transistor, and the other end is connected to the ground.

[0007] In one embodiment, the attenuation module includes a first attenuation module, which includes: a third transistor, a fourth transistor, a fifth transistor, a third resistor, a fourth resistor, a fifth resistor, a twenty-second resistor, a twenty-third resistor, a twenty-fourth resistor and a first inductor, wherein the signal input end is connected to the drain of the third transistor; one end of the twenty-second resistor is connected to the drain of the third transistor, and the other end is connected to the drain of the fourth transistor; one end of the third resistor is connected to the gate of the third transistor, and the other end is used to connect the third control signal; one end of the first inductor is connected to the drain of the third transistor, and the other end is connected to one end of the twenty-third resistor, and the other end of the twenty-third resistor is connected to the source of the third transistor; one end of the twenty-fourth resistor is connected to the source of the third transistor, and the other end is connected to the drain of the fifth transistor; one end of the fourth resistor is connected to the gate of the fourth transistor, and the other end is used to connect the fourth control signal; the source of the fourth transistor is connected to the ground; one end of the fifth resistor is connected to the gate of the fifth transistor, and the other end is used to connect the fourth control signal; the source of the fifth transistor is connected to the ground.

[0008] In one embodiment, the attenuation module includes a second attenuation module, which includes: a sixth transistor, a seventh transistor, an eighth transistor, a sixth resistor, a seventh resistor, an eighth resistor, a twenty-fifth resistor, a twenty-sixth resistor, a twenty-seventh resistor and a second inductor, the drain of the sixth transistor is connected to the source of the third transistor; one end of the twenty-fifth resistor is connected to the drain of the sixth transistor, and the other end is connected to the drain of the seventh transistor; one end of the sixth resistor is connected to the gate of the sixth transistor, and the other end is used to connect the fifth control signal; one end of the second inductor is connected to the drain of the sixth transistor, and the other end is connected to one end of the twenty-sixth resistor, and the other end of the twenty-sixth resistor is connected to the source of the sixth transistor; one end of the twenty-seventh resistor is connected to the source of the sixth transistor, and the other end is connected to the drain of the eighth transistor; one end of the seventh resistor is connected to the gate of the seventh transistor, and the other end is used to connect the sixth control signal; the source of the seventh transistor is connected to ground; one end of the eighth resistor is connected to the gate of the eighth transistor, and the other end is used to connect the sixth control signal; the source of the eighth transistor is connected to ground.

[0009] In one embodiment, the attenuation module includes a third attenuation module, which includes: a ninth transistor, a tenth transistor, an eleventh transistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twenty-eighth resistor, a twenty-ninth resistor, a thirtieth resistor and a third inductor, the drain of the ninth transistor is connected to the source of the sixth transistor; one end of the twenty-eighth resistor is connected to the drain of the ninth transistor, and the other end is connected to the drain of the tenth transistor; one end of the ninth resistor is connected to the gate of the ninth transistor, and the other end is used to connect the seventh control signal; one end of the third inductor is connected to the drain of the ninth transistor, and the other end is connected to one end of the twenty-ninth resistor, and the other end of the twenty-ninth resistor is connected to the source of the ninth transistor; one end of the thirtieth resistor is connected to the source of the ninth transistor, and the other end is connected to the drain of the eleventh transistor; one end of the tenth resistor is connected to the gate of the tenth transistor, and the other end is used to connect the eighth control signal; the source of the tenth transistor is connected to the ground; one end of the eleventh resistor is connected to the gate of the eleventh transistor, and the other end is used to connect the eighth control signal; the source of the eleventh transistor is connected to the ground.

[0010] In one embodiment, the attenuation module includes a fourth attenuation module, which includes: a twelfth transistor, a thirteenth transistor, a fourteenth transistor, a fifteenth transistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor and a fifteenth resistor, the drain of the twelfth transistor is connected to the source of the ninth transistor; one end of the twelfth resistor is connected to the gate of the twelfth transistor, and the other end is used to connect the ninth control signal; the drain of the fourteenth transistor is connected to the source of the twelfth transistor, and the source of the fourteenth transistor is connected to the ground; one end of the fourteenth resistor is connected to the gate of the fourteenth transistor, and the other end is used to connect the tenth control signal; the drain of the thirteenth transistor is connected to the source of the twelfth transistor; one end of the thirteenth resistor is connected to the gate of the thirteenth transistor, and the other end is used to connect the ninth control signal; the drain of the fifteenth transistor is connected to the drain of the thirteenth transistor, and the source of the fifteenth transistor is connected to the ground; one end of the fifteenth resistor is connected to the gate of the fifteenth transistor, and the other end is used to connect the tenth control signal; the source of the thirteenth transistor is connected to the signal output end.

[0011] In one embodiment, the fourth attenuation module further includes: a sixteenth transistor, a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a sixteenth resistor, a seventeenth resistor, an eighteenth resistor, a nineteenth resistor, a thirty-first resistor, a thirty-second resistor and a fourth inductor, wherein the signal input end is connected to the drain of the eighteenth transistor; one end of the eighteenth resistor is connected to the gate of the eighteenth transistor, and the other end is used to connect the tenth control signal; the source of the sixteenth transistor is connected to the source of the eighteenth transistor, and the source of the sixteenth transistor is connected to ground; one end of the sixteenth resistor is connected to the gate of the sixteenth transistor, and the other end is used to connect the ninth control signal; one end of the thirty-first resistor is connected to the drain of the eighteenth transistor The source of the first transistor is connected to the control signal of the first transistor, and the other end is connected to the ground; one end of the fourth inductor is connected to the source of the eighteenth transistor, and the other end is connected to one end of the thirty-second resistor, and the other end of the thirty-second resistor is connected to the drain of the nineteenth transistor; one end of the thirty-third resistor is connected to the drain of the nineteenth transistor, and the other end is connected to the ground; one end of the nineteenth resistor is connected to the gate of the nineteenth transistor, and the other end is used to connect the tenth control signal; the drain of the seventeenth transistor is connected to the drain of the nineteenth transistor, and the source of the seventeenth transistor is connected to the ground; one end of the seventeenth resistor is connected to the gate of the seventeenth transistor, and the other end is used to connect the ninth control signal; the source of the nineteenth transistor is connected to the signal output terminal.

[0012] In one embodiment, the third control signal and the fourth control signal keep one of them at a high level and the other at a low level at the same time; the fifth control signal and the sixth control signal keep one of them at a high level and the other at a low level at the same time; the seventh control signal and the eighth control signal keep one of them at a high level and the other at a low level at the same time; the ninth control signal and the tenth control signal keep one of them at a high level and the other at a low level at the same time.

[0013] A second aspect of the present application also provides a method for improving phase shift of a radio frequency attenuator, the method comprising: adding an inductor module between the first transistor module and the second transistor module; Wherein, the RF attenuator includes a plurality of attenuation modules connected in series, the attenuation module is used to provide a predetermined attenuation amount, the attenuation module includes the first transistor module and the second transistor module connected to each other, when the first transistor module is turned on and the second transistor module is turned off, the attenuation module is in a reference state, when the first transistor module is turned off and the second transistor module is turned on, the attenuation module is in an attenuation state, in the reference state, the influence of the attenuation module on the signal is minimized, in the attenuation state, the attenuation module provides a predetermined attenuation amount, and the inductance module is used to compensate for the circuit phase when the attenuation module is in the attenuation state.

[0014] The above one or more technical solutions in the embodiments of the present application have at least one or more of the following technical effects: The present invention proposes a structure for improving the phase shift of a radio frequency attenuator, which is intended to effectively reduce the additional phase shift generated when the signal switches between different attenuation states. The structure includes a plurality of attenuation modules connected in series, each of which includes a first and a second transistor module, and can switch between a reference state and an attenuation state. In the reference state, the first transistor module is turned on and the second transistor module is turned off, and the influence of the attenuation module on the signal is minimized; while in the attenuation state, the first transistor module is turned off and the second transistor module is turned on, thereby providing a predetermined attenuation amount. In order to solve the phase change caused by different transmission paths, an inductance module is also connected to the attenuation module, and the inductance module compensates for the phase of the circuit in the attenuation state. When the circuit is in the reference state, since the transistor behaves as a small resistor when it is turned on and behaves as a large capacitor when it is turned off, the inductor module has little effect on the phase of the reference state; on the contrary, in the attenuation state, the inductor module can effectively compensate for the additional phase shift, so that the phase change of the attenuation state is reduced. This design ensures that in the attenuation state, by subtracting the phase shift of the reference state, the influence of the additional phase shift is significantly reduced, thereby improving the phase integrity of the system without having a significant negative effect on the insertion loss and attenuation, thereby achieving efficient signal processing effects. Therefore, the present invention provides a radio frequency attenuator circuit structure that can maintain a low additional phase shift while hardly affecting the signal insertion loss and attenuation, and is suitable for application scenarios with extremely high requirements for phase accuracy.

[0015] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a schematic diagram of a circuit module of a structure for improving phase shift of a radio frequency attenuator in an embodiment of the present invention; Figure 2 It is a schematic diagram of the circuit principle of a structure for improving phase shift of a radio frequency attenuator in an embodiment of the present invention; Figure 3 An additional phase shift comparison diagram of a conventional RF attenuator and a structure for improving phase shift of a RF attenuator provided by the present application; Figure 4A comparison diagram of insertion loss between a conventional radio frequency attenuator and a structure for improving phase shift of a radio frequency attenuator provided in the present application; Figure 5 This is a comparison chart of the attenuation of a traditional RF attenuator and the structure for improving the phase shift of the RF attenuator provided in the present application.

[0018] Explanation of the reference numerals: 100, attenuation module; 110, first transistor module; 120, second transistor module; 130, inductor module; 201, first transistor; 202, second transistor; 203, third transistor; 204, fourth transistor; 205, fifth transistor; 206, sixth transistor; 207, seventh transistor; 208, eighth transistor; 209, ninth transistor; 210, tenth transistor; 211, eleventh transistor; 212, twelfth transistor; 213, thirteenth transistor; 214, fourteenth transistor; 215, fifteenth transistor; 216, sixteenth transistor; 217, seventeenth transistor; 218, eighteenth transistor; 219, nineteenth transistor; 220, first resistor; 221, second resistor; 222, third resistor; 223, fourth resistor; 224, fifth resistor; 225, sixth resistor; 226, seventh resistor; 227, eighth transistor resistor; 228, the ninth resistor; 229, the tenth resistor; 230, the eleventh resistor; 231, the twelfth resistor; 232, the thirteenth resistor; 233, the fourteenth resistor; 234, the fifteenth resistor; 235, the sixteenth resistor; 236, the seventeenth resistor; 237, the eighteenth resistor; 238, the nineteenth resistor; 239, the twentieth resistor; 240, the twenty-first resistor; 241, the twenty-second resistor; 242, the twenty-third resistor; 243, The twenty-fourth resistor; 244, the twenty-fifth resistor; 245, the twenty-sixth resistor; 246, the twenty-seventh resistor; 247, the twenty-eighth resistor; 248, the twenty-ninth resistor; 249, the thirtieth resistor; 250, the thirty-first resistor; 251, the thirty-second resistor; 252, the thirty-third resistor; 253, the first capacitor; 254, the second capacitor; 255, the first inductor; 256, the second inductor; 257, the third inductor; 258, the fourth inductor. DETAILED DESCRIPTION

[0019] The overall idea of ​​the technical solution provided by the present invention is as follows: See also Figure 1The structure for improving the phase shift of the radio frequency attenuator includes: a plurality of attenuation modules 100 connected in series, the attenuation module 100 is used to provide a predetermined attenuation amount, the attenuation module 100 includes a first transistor module 110 and a second transistor module 120 connected to each other, when the first transistor module 110 is turned on and the second transistor module 120 is turned off, the attenuation module 100 is in a reference state, when the first transistor module 110 is turned off and the second transistor module 120 is turned on, the attenuation module 100 is in an attenuation state, in the reference state, the influence of the attenuation module 100 on the signal is minimized, in the attenuation state, the attenuation module 100 provides a predetermined attenuation amount, an inductance module 130 is connected between the first transistor module 110 and the second transistor module 120, and the inductance module 130 is used to compensate for the circuit phase when the attenuation module 100 is in the attenuation state.

[0020] Specifically, the attenuation module 100 is the core component of the RF attenuator, which is responsible for adjusting the strength of the signal passing through. The first transistor module 110 includes at least one transistor, whose main function is to turn on the signal in the reference state and cut off the signal in the attenuation state. The on and off states of the transistor are controlled by an external control signal, thereby achieving attenuation or non-attenuation of the signal. The second transistor module 120 is similar to the first transistor module 110. The second transistor module 120 also includes at least one transistor, but its working state is opposite to that of the first transistor module 110. In the reference state, the second transistor module 120 cuts off the signal and turns on the signal in the attenuation state. The inductor module 130 is located between the first transistor module 110 and the second transistor module 120. The main function of the inductor module 130 is to compensate the phase of the circuit in the attenuation state. Since the inductor has the characteristic of phase delay for the AC signal, it can adjust the phase of the signal to offset the phase change caused by the transistor switching.

[0021] When the attenuation module 100 is in the reference state, the first transistor module 110 is turned on, allowing the signal to pass through almost without attenuation, while the second transistor module 120 is turned off, preventing the signal from passing through. At this time, due to the conduction of the first transistor module 110, the circuit presents a low impedance state, and the signal passes through the attenuation module almost unaffected. In the attenuation state, the first transistor module 110 is turned off, preventing the signal from passing through, while the second transistor module 120 is turned on, and the signal is attenuated by the second transistor module 120. Due to the change in the signal path, additional phase changes may be introduced. In order to compensate for this phase change, the inductor module 130 intervenes in the attenuation state and uses its phase delay characteristics to phase compensate the signal.

[0022] The present application provides a structure for improving phase shift of a radio frequency attenuator, which includes a plurality of serially connected attenuation modules 100, each of which includes a first and a second transistor module 120, and is capable of switching between a reference state and an attenuation state. In the reference state, the first transistor module 110 is turned on and the second transistor module 120 is turned off, and the influence of the attenuation module 100 on the signal is minimized; while in the attenuation state, the first transistor module 110 is turned off and the second transistor module 120 is turned on, thereby providing a predetermined attenuation amount. In order to solve the phase change caused by different transmission paths, an inductance module 130 is also connected to the attenuation module 100, and the inductance module 130 compensates for the phase of the circuit in the attenuation state. When the circuit is in the reference state, since the transistor behaves as a small resistor when it is turned on and behaves as a large capacitor when it is turned off, the inductor module 130 has little effect on the phase of the reference state; on the contrary, in the attenuation state, the inductor module 130 can effectively compensate for the additional phase shift, so that the phase change of the attenuation state is reduced. This design ensures that in the attenuation state, by subtracting the phase shift of the reference state, the influence of the additional phase shift is significantly reduced, thereby improving the phase integrity of the system without having a significant negative effect on the insertion loss and attenuation, thereby achieving an efficient signal processing effect. Therefore, the present invention provides a radio frequency attenuator circuit structure that can maintain a low additional phase shift while hardly affecting the signal insertion loss and attenuation, and is suitable for application scenarios with extremely high requirements for phase accuracy.

[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] As can be understood, an RF attenuator is an electronic component used to reduce the power of RF signals. It plays an important role in many fields such as wireless communications, RF testing, radar systems, laboratory measurements, etc. The main function of an RF attenuator is to provide a known and controllable signal attenuation to facilitate accurate control and testing of signals. RF attenuators are mainly divided into the following fixed attenuators and variable attenuators. Fixed attenuators are attenuators that provide a fixed attenuation and are suitable for occasions where the attenuation does not need to be changed. Variable attenuators are attenuators whose attenuation can be adjusted within a certain range and are often used in occasions where signal power needs to be adjusted dynamically. Among them, a variable attenuator is usually composed of multiple attenuation modules, each module corresponds to a binary bit, and each attenuation module can provide a specific attenuation. For example, the simplest implementation method is that each unit provides an equal amount of attenuation, so that the first unit provides 1 / 2 attenuation, the second unit provides 1 / 4 attenuation, and so on. By combining these units, a continuous change from 0 to the maximum attenuation can be achieved.

[0025] See also Figure 2 , the structure for improving the phase shift of the RF attenuator also includes: a first transistor 201, a first resistor 220, a twentieth resistor 239 and a first capacitor 253, the signal input end is connected to the drain of the first transistor 201; one end of the twentieth resistor 239 is connected to the source of the first transistor 201, and the other end is connected to the ground; one end of the first resistor 220 is connected to the gate of the first transistor 201, and the other end is used to connect the first control signal; one end of the first capacitor 253 is connected to the source of the first transistor 201, and the other end is connected to the ground. Specifically, the first transistor 201 is used to control the on and off of the signal, the drain of the first transistor 201 is connected to the signal input end, the source is connected to the twentieth resistor 239 and the first capacitor 253, and the gate is connected to the first resistor 220 and is used to receive the first control signal; wherein the first resistor 220 is connected between the gate of the first transistor 201 and the first control signal, and is used to limit the current flowing to the gate, and protect the first transistor 201 from being affected by the excessive control signal. When the first control signal turns on the first transistor 201, the circuit is in an attenuation state. At this time, the signal is input from the input terminal, enters through the drain of the first transistor 201, and then outputs through the source. Since the first transistor 201 is turned on, it is equivalent to a low-impedance channel, and the signal can pass through the first transistor 201 more freely. When the first control signal turns off the first transistor 201, the circuit is in a reference state. At this time, the signal is input from the input terminal, but since the first transistor 201 is turned off, the signal will not flow through the first transistor, but directly enter the attenuator signal transmission loop. In the attenuation state, the signal passes through the first transistor 201 to achieve a predetermined attenuation effect, while in the reference state, the signal does not pass through the first transistor 201, thereby minimizing the impact on the signal.

[0026] Furthermore, the circuit structure formed by the first transistor 201, the first resistor 220, the twentieth resistor 239 and the first capacitor 253 can be used to achieve an attenuation of 0.5 dB.

[0027] Further, the structure for improving the phase shift of the RF attenuator also includes: a second transistor 202, a second resistor 221, a twenty-first resistor 240 and a second capacitor 254, the signal input end is connected to the drain of the second transistor 202; one end of the twenty-first resistor 240 is connected to the source of the second transistor 202, and the other end is connected to the ground; one end of the second resistor 221 is connected to the gate of the second transistor 202, and the other end is used to connect the second control signal; one end of the second capacitor 254 is connected to the source of the second transistor 202, and the other end is connected to the ground. Specifically, the second transistor 202 is used to control the on and off of the signal, the drain of the second transistor 202 is connected to the signal input end, the source is connected to the twenty-first resistor 240 and the second capacitor 254, and the gate is connected to the second resistor 221 and is used to receive the second control signal; wherein the second resistor 221 is connected between the gate of the second transistor 202 and the second control signal, and is used to limit the current flowing to the gate, and protect the second transistor 202 from being affected by the excessive control signal. When the second control signal turns on the second transistor 202, the circuit is in an attenuation state. At this time, the signal is input from the input terminal, enters through the drain of the second transistor 202, and then outputs through the source. Since the second transistor 202 is turned on, it is equivalent to a low-impedance channel, and the signal can pass through the second transistor 202 more freely. When the second control signal turns off the second transistor 202, the circuit is in a reference state. At this time, the signal is input from the input terminal, but since the second transistor 202 is turned off, the signal will not flow through the first transistor, but directly enter the attenuator signal transmission loop. In the attenuation state, the signal passes through the second transistor 202 to achieve a predetermined attenuation effect, while in the reference state, the signal does not pass through the second transistor 202, thereby minimizing the impact on the signal.

[0028] Furthermore, the circuit structure formed by the second transistor 202 , the second resistor 221 , the twenty-first resistor 240 , and the second capacitor 254 can be used to achieve an attenuation of 1 dB.

[0029] See also Figure 2The attenuation module 100 includes a first attenuation module, which includes: a third transistor 203, a fourth transistor 204, a fifth transistor 205, a third resistor 222, a fourth resistor 223, a fifth resistor 224, a twenty-second resistor 241, a twenty-third resistor 242, a twenty-fourth resistor 243 and a first inductor 255, wherein the signal input end is connected to the drain of the third transistor 203; one end of the twenty-second resistor 241 is connected to the drain of the third transistor 203, and the other end is connected to the drain of the fourth transistor 204; one end of the third resistor 222 is connected to the gate of the third transistor 203, and the other end is used to connect the third control signal; the first inductor One end of the resistor 255 is connected to the drain of the third transistor 203, and the other end is connected to one end of the twenty-third resistor 242, and the other end of the twenty-third resistor 242 is connected to the source of the third transistor 203; one end of the twenty-fourth resistor 243 is connected to the source of the third transistor 203, and the other end is connected to the drain of the fifth transistor 205; one end of the fourth resistor 223 is connected to the gate of the fourth transistor 204, and the other end is used to connect the fourth control signal; the source of the fourth transistor 204 is connected to the ground; one end of the fifth resistor 224 is connected to the gate of the fifth transistor 205, and the other end is used to connect the fourth control signal; the source of the fifth transistor 205 is connected to the ground. In this circuit, the third transistor 203 constitutes the above-mentioned first transistor module 110, the fourth transistor 204 and the fifth transistor 205 constitute the above-mentioned second transistor module 120, and the first inductor 255 constitutes the above-mentioned inductor module 130. Specifically, when the third control signal is at a high level and the fourth control signal is at a low level, the gate of the third transistor 203 is at a high potential, and the source and the drain are at a low potential, so the third transistor 203 is turned on, and the gates of the fourth transistor 204 and the fifth transistor 205 are at a low potential, and the source and the drain are at a high potential, so the fourth transistor 204 and the fifth transistor 205 are turned off. At this time, the circuit is in a reference state. In this state, the signal can pass through the third transistor 203 smoothly without being affected by the fourth transistor 204 and the fifth transistor 205. Since the transistor can be equivalent to a small resistor when it is turned on and can be equivalent to a large capacitor when it is turned off, the first inductor 255 has little effect on the phase of the reference state; when the third control signal is at a low level and the fourth control signal is at a high level, the gate of the third transistor 203 is at a low potential, and the source and the drain are at a high potential, so the third transistor 203 is turned off, and the gates of the fourth transistor 204 and the fifth transistor 205 are at a high potential, and the source and the drain are at a low potential, so the fourth transistor 204 and the fifth transistor 205 are turned on, and the circuit is in an attenuation state. In this state, the signal cannot pass through the third transistor 203, but is attenuated through the fourth transistor 204 and the fifth transistor 205.Since the transistor is equivalent to a large capacitor when it is turned off, the signal path changes, which may introduce additional phase changes. At this time, the first inductor 255 compensates for the circuit phase, which can reduce the phase change caused by transistor switching.

[0030] Furthermore, the first attenuation module can be used to achieve an attenuation of 2 dB.

[0031] See also Figure 2, the attenuation module 100 includes a second attenuation module, which includes: a sixth transistor 206, a seventh transistor 207, an eighth transistor 208, a sixth resistor 225, a seventh resistor 226, an eighth resistor 227, a twenty-fifth resistor 244, a twenty-sixth resistor 245, a twenty-seventh resistor 246 and a second inductor 256, the drain of the sixth transistor 206 is connected to the source of the third transistor 203; one end of the twenty-fifth resistor 244 is connected to the drain of the sixth transistor 206, and the other end is connected to the drain of the seventh transistor 207; one end of the sixth resistor 225 is connected to the gate of the sixth transistor 206, and the other end is used to connect the fifth control signal; the One end of the second inductor 256 is connected to the drain of the sixth transistor 206, and the other end is connected to one end of the twenty-sixth resistor 245, and the other end of the twenty-sixth resistor 245 is connected to the source of the sixth transistor 206; one end of the twenty-seventh resistor 246 is connected to the source of the sixth transistor 206, and the other end is connected to the drain of the eighth transistor 208; one end of the seventh resistor 226 is connected to the gate of the seventh transistor 207, and the other end is used to connect the sixth control signal; the source of the seventh transistor 207 is connected to the ground; one end of the eighth resistor 227 is connected to the gate of the eighth transistor 208, and the other end is used to connect the sixth control signal; the source of the eighth transistor 208 is connected to the ground. In this circuit, the sixth transistor 206 constitutes the first transistor module 110, the seventh transistor 207 and the eighth transistor 208 constitute the second transistor module 120, and the second inductor 256 constitutes the inductor module 130. Specifically, when the fifth control signal is at a high level and the sixth control signal is at a low level, the gate of the sixth transistor 206 is at a high potential, and the source and the drain are at a low potential, so the sixth transistor 206 is turned on, and the gates of the seventh transistor 207 and the eighth transistor 208 are at a low potential, and the source and the drain are at a high potential, so the seventh transistor 207 and the eighth transistor 208 are turned off. At this time, the circuit is in a reference state. In this state, the signal can pass through the sixth transistor 206 smoothly without being affected by the seventh transistor 207 and the eighth transistor 208. Since the transistor can be equivalent to a small resistor when it is turned on and can be equivalent to a large capacitor when it is turned off, the second inductor 256 has little effect on the phase of the reference state; when the fifth control signal is at a low level and the sixth control signal is at a high level, the gate of the sixth transistor 206 is at a low potential, and the source and the drain are at a high potential, so the sixth transistor 206 is turned off, and the gates of the seventh transistor 207 and the eighth transistor 208 are at a high potential, and the source and the drain are at a low potential, so the seventh transistor 207 and the eighth transistor 208 are turned on, and the circuit is in an attenuation state. In this state, the signal cannot pass through the sixth transistor 206, but is attenuated through the seventh transistor 207 and the eighth transistor 208.Since the transistor is equivalent to a large capacitor when it is turned off, the signal path changes, which may introduce additional phase changes. At this time, the second inductor 256 compensates for the circuit phase and can reduce the phase change caused by transistor switching.

[0032] Furthermore, the second attenuation module can be used to achieve an attenuation of 4 dB.

[0033] See also Figure 2The attenuation module 100 includes a third attenuation module, which includes: a ninth transistor 209, a tenth transistor 210, an eleventh transistor 211, a ninth resistor 228, a tenth resistor 229, an eleventh resistor 230, a twenty-eighth resistor 247, a twenty-ninth resistor 248, a thirtieth resistor 249 and a third inductor 257, the drain of the ninth transistor 209 is connected to the source of the sixth transistor 206; one end of the twenty-eighth resistor 247 is connected to the drain of the ninth transistor 209, and the other end is connected to the drain of the tenth transistor 210; one end of the ninth resistor 228 is connected to the gate of the ninth transistor 209, and the other end is used to connect the seventh control signal; the third One end of the inductor 257 is connected to the drain of the ninth transistor 209, and the other end is connected to one end of the twenty-ninth resistor 248, and the other end of the twenty-ninth resistor 248 is connected to the source of the ninth transistor 209; one end of the thirtieth resistor 249 is connected to the source of the ninth transistor 209, and the other end is connected to the drain of the eleventh transistor 211; one end of the tenth resistor 229 is connected to the gate of the tenth transistor 210, and the other end is used to connect the eighth control signal; the source of the tenth transistor 210 is connected to the ground; one end of the eleventh resistor 230 is connected to the gate of the eleventh transistor 211, and the other end is used to connect the eighth control signal; the source of the eleventh transistor 211 is connected to the ground. In this circuit, the ninth transistor 209 constitutes the first transistor module 110, the tenth transistor 210 and the eleventh transistor 211 constitute the second transistor module 120, and the third inductor 257 constitutes the inductor module 130. Specifically, when the seventh control signal is at a high level and the eighth control signal is at a low level, the gate of the ninth transistor 209 is at a high potential, and the source and the drain are at a low potential, so the ninth transistor 209 is turned on, and the gates of the tenth transistor 210 and the eleventh transistor 211 are at a low potential, and the source and the drain are at a high potential, so the tenth transistor 210 and the eleventh transistor 211 are turned off. At this time, the circuit is in a reference state. In this state, the signal can pass through the ninth transistor 209 smoothly without being affected by the tenth transistor 210 and the eleventh transistor 211. Since the transistor can be equivalent to a small resistor when it is turned on and can be equivalent to a large capacitor when it is turned off, the third inductor 257 has little effect on the phase of the reference state; when the seventh control signal is at a low level and the eighth control signal is at a high level, the gate of the ninth transistor 209 is at a low potential, and the source and the drain are at a high potential, so the ninth transistor 209 is turned off, and the gates of the tenth transistor 210 and the eleventh transistor 211 are at a high potential, and the source and the drain are at a low potential, so the tenth transistor 210 and the eleventh transistor 211 are turned on, and the circuit is in an attenuation state. In this state, the signal cannot pass through the ninth transistor 209, but is attenuated through the tenth transistor 210 and the eleventh transistor 211.Since the transistor is equivalent to a large capacitor when it is turned off, the signal path changes, which may introduce additional phase changes. At this time, the third inductor 257 compensates for the circuit phase, which can reduce the phase change caused by transistor switching.

[0034] Furthermore, the second attenuation module can be used to achieve an attenuation of 8 dB.

[0035] See also Figure 2 , the attenuation module 100 includes a fourth attenuation module, the fourth attenuation module includes: a twelfth transistor 212, a thirteenth transistor 213, a fourteenth transistor 214, a fifteenth transistor 215, a twelfth resistor 231, a thirteenth resistor 232, a fourteenth resistor 233 and a fifteenth resistor 234, the drain of the twelfth transistor 212 is connected to the source of the ninth transistor 209; one end of the twelfth resistor 231 is connected to the gate of the twelfth transistor 212, and the other end is used to connect the ninth control signal; the drain of the fourteenth transistor 214 is connected to the source of the twelfth transistor 212, and the source of the fourteenth transistor 214 is connected to the ground; One end of the fourteenth resistor 233 is connected to the gate of the fourteenth transistor 214, and the other end is used to connect the tenth control signal; the drain of the thirteenth transistor 213 is connected to the source of the twelfth transistor 212; one end of the thirteenth resistor 232 is connected to the gate of the thirteenth transistor 213, and the other end is used to connect the ninth control signal; the drain of the fifteenth transistor 215 is connected to the drain of the thirteenth transistor 213, and the source of the fifteenth transistor 215 is connected to the ground; one end of the fifteenth resistor 234 is connected to the gate of the fifteenth transistor 215, and the other end is used to connect the tenth control signal; the source of the thirteenth transistor 213 is connected to the signal output end.

[0036] Further, the fourth attenuation module also includes: a sixteenth transistor 216, a seventeenth transistor 217, an eighteenth transistor 218, a nineteenth transistor 219, a sixteenth resistor 235, a seventeenth resistor 236, an eighteenth resistor 237, a nineteenth resistor 238, a thirty-first resistor 250, a thirty-second resistor 251 and a fourth inductor 258, wherein the signal input end is connected to the drain of the eighteenth transistor 218; one end of the eighteenth resistor 237 is connected to the gate of the eighteenth transistor 218, and the other end is used to connect the tenth control signal; the source of the sixteenth transistor 216 is connected to the source of the eighteenth transistor 218, and the source of the sixteenth transistor 216 is connected to the ground; one end of the sixteenth resistor 235 is connected to the gate of the sixteenth transistor 216, and the other end is used to connect the ninth control signal; one end of the thirty-first resistor 250 is connected to the gate of the sixteenth transistor 216, and the other end is used to connect the ninth control signal; One end of the fourth inductor 258 is connected to the source of the eighteenth transistor 218, and the other end is connected to the ground; one end of the fourth inductor 258 is connected to the source of the eighteenth transistor 218, and the other end is connected to one end of the thirty-second resistor 251, and the other end of the thirty-second resistor 251 is connected to the drain of the nineteenth transistor 219; one end of the thirty-third resistor 252 is connected to the drain of the nineteenth transistor 219, and the other end is connected to the ground; one end of the nineteenth resistor 238 is connected to the gate of the nineteenth transistor 219, and the other end is used to connect the tenth control signal; the drain of the seventeenth transistor 217 is connected to the drain of the nineteenth transistor 219, and the source of the seventeenth transistor 217 is connected to the ground; one end of the seventeenth resistor 236 is connected to the gate of the seventeenth transistor 217, and the other end is used to connect the ninth control signal; the source of the nineteenth transistor 219 is connected to the signal output terminal.

[0037] Specifically, when the ninth control signal is at a high level and the tenth control signal is at a low level, the gates of the twelfth transistor 212, the thirteenth transistor 213, the sixteenth transistor 216 and the seventeenth transistor 217 are at a high potential, and the source and the drain are at a low potential, so these four transistors are turned on, and the gates of the fourteenth transistor 214, the fifteenth transistor 215, the eighteenth transistor 218 and the nineteenth transistor 219 are at a low potential, and the source and the drain are at a high potential, so these four transistors are turned off. At this time, the circuit is in a reference state. In this state, the signal can pass smoothly through the turned-on twelfth transistor 212, the thirteenth transistor 213, the sixteenth transistor 216 and the seventeenth transistor 217 without being affected by the turned-off fourteenth transistor 214, the fifteenth transistor 215, the eighteenth transistor 218 and the nineteenth transistor 219. Since the on transistor is equivalent to a small resistor, the signal passes through almost without attenuation; the transistor can be equivalent to a small resistor when it is on, and can be equivalent to a large capacitor when it is off, so the fourth inductor 258 has little effect on the phase of the reference state; when the ninth control signal is at a low level and the tenth control signal is at a high level, the gates of the twelfth transistor 212, the thirteenth transistor 213, the sixteenth transistor 216 and the seventeenth transistor 217 are at a low potential, and the source and drain are at a high potential, so these four transistors are turned off, and the fourteenth transistor 21 4. The gates of the fifteenth transistor 215, the eighteenth transistor 218 and the nineteenth transistor 219 are at a high potential, and the source and the drain are at a low potential, so these four transistors are turned on, and the circuit is in an attenuation state. In this state, the signal cannot pass through the cut-off twelfth transistor 212, the thirteenth transistor 213, the sixteenth transistor 216 and the seventeenth transistor 217, but is attenuated through the turned-on fourteenth transistor 214, the fifteenth transistor 215, the eighteenth transistor 218 and the nineteenth transistor 219. Since the cut-off transistor is equivalent to a large capacitor, the signal path changes, which may introduce additional phase changes. At this time, the fourth inductor 258 compensates the circuit phase to reduce the phase change caused by transistor switching.

[0038] Furthermore, the fourth attenuation module can be used to achieve an attenuation of 16 dB.

[0039] Furthermore, the third control signal and the fourth control signal maintain one of them at a high level and the other at a low level at the same time; the fifth control signal and the sixth control signal maintain one of them at a high level and the other at a low level at the same time; the seventh control signal and the eighth control signal maintain one of them at a high level and the other at a low level at the same time; the ninth control signal and the tenth control signal maintain one of them at a high level and the other at a low level at the same time. The purpose of this control logic is to ensure that each attenuation module 100 can be accurately switched to a reference state or an attenuation state. Through this mutually exclusive control method, it is possible to avoid the situation where the transistors in the attenuation module 100 are turned on or off at the same time, which may cause abnormal circuit operation or damage.

[0040] See also Figure 3 , Figure 3 The additional phase shift comparison diagram of the conventional RF attenuator to achieve 2 / 4 / 8 / 16dB attenuation and the structure for improving the phase shift of the RF attenuator provided by the present application, in which the thick line is the additional phase shift of the present invention and the thin line is the additional phase shift of the conventional RF attenuator. It can be seen that the additional phase shift of the present invention is significantly smaller than that of the conventional RF attenuator. Figure 4 , Figure 4 The insertion loss comparison diagram of the conventional RF attenuator for achieving 2 / 4 / 8 / 16dB attenuation and the structure for improving phase shift of RF attenuator provided by the present application is shown in the figure. The thick line in the figure is the insertion loss of the present invention, and the thin line is the insertion loss of the conventional RF attenuator. It can be seen that the insertion loss of the present invention is basically consistent with the insertion loss of the conventional RF attenuator. Please refer to Figure 5 , Figure 5 The attenuation comparison diagram of the conventional RF attenuator for achieving 2 / 4 / 8 / 16dB attenuation and the structure for improving the phase shift of the RF attenuator provided in the present application is shown. The thick line in the figure is the attenuation of the present invention, and the thin line is the attenuation of the conventional RF attenuator. It can be seen that the insertion loss of the present invention is basically consistent with the attenuation of the conventional RF attenuator. It can be seen that this design ensures that in the attenuation state, by subtracting the phase shift of the reference state, the influence of the additional phase shift is significantly reduced, and there will be no obvious negative effect on the insertion loss and attenuation, thereby achieving an efficient signal processing effect.

[0041] The present invention also provides a method for improving phase shift of a radio frequency attenuator, the method specifically comprising the following steps: An inductor module 130 is added between the first transistor module 110 and the second transistor module 120; Among them, the RF attenuator includes a plurality of attenuation modules 100 connected in series, the attenuation module 100 is used to provide a predetermined attenuation amount, the attenuation module 100 includes a first transistor module 110 and a second transistor module 120 connected to each other, when the first transistor module 110 is turned on and the second transistor module 120 is turned off, the attenuation module 100 is in a reference state, when the first transistor module 110 is turned off and the second transistor module 120 is turned on, the attenuation module 100 is in an attenuation state, in the reference state, the influence of the attenuation module 100 on the signal is minimized, in the attenuation state, the attenuation module 100 provides a predetermined attenuation amount, and the inductance module 130 is used to compensate for the circuit phase when the attenuation module 100 is in the attenuation state.

[0042] Specifically, the method for improving the phase shift of an RF attenuator provided in the present application reduces the additional phase shift in the attenuation state by adding an inductor module 130 between the first transistor module 110 and the second transistor module 120 in the attenuation module 100, thereby improving the phase integrity of the signal, which is an important technical advancement for applications requiring high-precision phase control.

[0043] It can be understood that the values ​​of the first control signal to the tenth control signal mentioned in the present invention, the component values ​​of all resistors and all capacitors, and the size values ​​of all transistors need to be designed according to the specific circumstances of the RF attenuator. Generally speaking, the twenty-second resistor 241, the twenty-third resistor 242, the twenty-fourth resistor 243, the twenty-fifth resistor 244, the twenty-sixth resistor 245, the twenty-seventh resistor 246, the twenty-eighth resistor 247, the twenty-ninth resistor 248, the thirtieth resistor 249, the thirty-first resistor 250, the thirty-second resistor 251 and the thirty-third resistor 252 can be small resistors ranging from tens to hundreds of ohms, and the remaining resistors can be large resistors of several thousand ohms, which is easy to understand for those skilled in the art.

[0044] In addition, in the present invention, the first transistor 201, the second transistor 202, the third transistor 203, the fourth transistor 204, the fifth transistor 205, the sixth transistor 206, the seventh transistor 207, the eighth transistor 208, the ninth transistor 209, the tenth transistor 210, the eleventh transistor 211, the twelfth transistor 212, the thirteenth transistor 213, the fourteenth transistor 214, the fifteenth transistor 215, the sixteenth transistor 216, the seventeenth transistor 217, the eighteenth transistor 218 and the nineteenth transistor 219 represent one transistor, but according to the size of the RF power that the RF attenuator needs to withstand, the first transistor 2 01, the second transistor 202, the third transistor 203, the fourth transistor 204, the fifth transistor 205, the sixth transistor 206, the seventh transistor 207, the eighth transistor 208, the ninth transistor 209, the tenth transistor 210, the eleventh transistor 211, the twelfth transistor 212, the thirteenth transistor 213, the fourteenth transistor 214, the fifteenth transistor 215, the sixteenth transistor 216, the seventeenth transistor 217, the eighteenth transistor 218 and the nineteenth transistor 219 can also be represented by a plurality of stacked transistors in series, and the specific number of stacked transistors needs to be determined according to the radio frequency power required to be borne in the specific application. This is also easy to understand for those skilled in the art.

[0045] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0046] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if these modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A structure for improving phase shift of a radio frequency attenuator, characterized in that: include: A plurality of attenuation modules connected in series, wherein the attenuation modules are used to provide a predetermined attenuation amount, and the attenuation modules include a first transistor module and a second transistor module connected to each other. When the first transistor module is turned on and the second transistor module is turned off, the attenuation module is in a reference state, and when the first transistor module is turned off and the second transistor module is turned on, the attenuation module is in an attenuation state. In the reference state, the influence of the attenuation module on the signal is minimized, and in the attenuation state, the attenuation module provides a predetermined attenuation amount. An inductance module is connected between the first transistor module and the second transistor module, and the inductance module is used to compensate for the circuit phase when the attenuation module is in the attenuation state.

2. The structure for improving phase shift of a radio frequency attenuator according to claim 1, characterized in that: Also includes: a first transistor, a first resistor, a twentieth resistor and a first capacitor, wherein the signal input terminal is connected to the drain of the first transistor; One end of the twentieth resistor is connected to the source of the first transistor, and the other end is connected to the ground; one end of the first resistor is connected to the gate of the first transistor, and the other end is used to connect a first control signal; one end of the first capacitor is connected to the source of the first transistor, and the other end is connected to the ground.

3. The structure for improving phase shift of a radio frequency attenuator according to claim 2, characterized in that: Also includes: a second transistor, a second resistor, a twenty-first resistor and a second capacitor, wherein the signal input terminal is connected to the drain of the second transistor; One end of the twenty-first resistor is connected to the source of the second transistor, and the other end is connected to the ground; one end of the second resistor is connected to the gate of the second transistor, and the other end is used to connect the second control signal; one end of the second capacitor is connected to the source of the second transistor, and the other end is connected to the ground.

4. The structure for improving phase shift of a radio frequency attenuator according to claim 1, characterized in that: The attenuation module includes a first attenuation module, which includes: a third transistor, a fourth transistor, a fifth transistor, a third resistor, a fourth resistor, a fifth resistor, a twenty-second resistor, a twenty-third resistor, a twenty-fourth resistor and a first inductor, wherein the signal input end is connected to the drain of the third transistor; one end of the twenty-second resistor is connected to the drain of the third transistor, and the other end is connected to the drain of the fourth transistor; one end of the third resistor is connected to the gate of the third transistor, and the other end is used to connect the third control signal; one end of the first inductor is connected to the drain of the third transistor, and the other end is connected to one end of the twenty-third resistor, and the other end of the twenty-third resistor is connected to the source of the third transistor; one end of the twenty-fourth resistor is connected to the source of the third transistor, and the other end is connected to the drain of the fifth transistor; one end of the fourth resistor is connected to the gate of the fourth transistor, and the other end is used to connect the fourth control signal; the source of the fourth transistor is connected to the ground; one end of the fifth resistor is connected to the gate of the fifth transistor, and the other end is used to connect the fourth control signal; the source of the fifth transistor is connected to the ground.

5. The structure for improving phase shift of a radio frequency attenuator according to claim 4, characterized in that: The attenuation module includes a second attenuation module, which includes: a sixth transistor, a seventh transistor, an eighth transistor, a sixth resistor, a seventh resistor, an eighth resistor, a twenty-fifth resistor, a twenty-sixth resistor, a twenty-seventh resistor and a second inductor, the drain of the sixth transistor is connected to the source of the third transistor; one end of the twenty-fifth resistor is connected to the drain of the sixth transistor, and the other end is connected to the drain of the seventh transistor; one end of the sixth resistor is connected to the gate of the sixth transistor, and the other end is used to connect the fifth control signal; one end of the second inductor is connected to the drain of the sixth transistor, and the other end is connected to one end of the twenty-sixth resistor, and the other end of the twenty-sixth resistor is connected to the source of the sixth transistor; one end of the twenty-seventh resistor is connected to the source of the sixth transistor, and the other end is connected to the drain of the eighth transistor; one end of the seventh resistor is connected to the gate of the seventh transistor, and the other end is used to connect the sixth control signal; the source of the seventh transistor is connected to the ground; one end of the eighth resistor is connected to the gate of the eighth transistor, and the other end is used to connect the sixth control signal; the source of the eighth transistor is connected to the ground.

6. The structure for improving phase shift of a radio frequency attenuator according to claim 5, characterized in that: The attenuation module includes a third attenuation module, which includes: a ninth transistor, a tenth transistor, an eleventh transistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twenty-eighth resistor, a twenty-ninth resistor, a thirtieth resistor and a third inductor, the drain of the ninth transistor is connected to the source of the sixth transistor; one end of the twenty-eighth resistor is connected to the drain of the ninth transistor, and the other end is connected to the drain of the tenth transistor; one end of the ninth resistor is connected to the gate of the ninth transistor, and the other end is used to connect the seventh control signal; one end of the third inductor is connected to the drain of the ninth transistor, and the other end is connected to one end of the twenty-ninth resistor, and the other end of the twenty-ninth resistor is connected to the source of the ninth transistor; one end of the thirtieth resistor is connected to the source of the ninth transistor, and the other end is connected to the drain of the eleventh transistor; one end of the tenth resistor is connected to the gate of the tenth transistor, and the other end is used to connect the eighth control signal; the source of the tenth transistor is connected to the ground; one end of the eleventh resistor is connected to the gate of the eleventh transistor, and the other end is used to connect the eighth control signal; the source of the eleventh transistor is connected to the ground.

7. The structure for improving phase shift of a radio frequency attenuator according to claim 6, characterized in that: The attenuation module includes a fourth attenuation module, which includes: a twelfth transistor, a thirteenth transistor, a fourteenth transistor, a fifteenth transistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor and a fifteenth resistor, the drain of the twelfth transistor is connected to the source of the ninth transistor; one end of the twelfth resistor is connected to the gate of the twelfth transistor, and the other end is used to connect the ninth control signal; the drain of the fourteenth transistor is connected to the source of the twelfth transistor, and the source of the fourteenth transistor is connected to the ground; one end of the fourteenth resistor is connected to the gate of the fourteenth transistor, and the other end is used to connect the tenth control signal; the drain of the thirteenth transistor is connected to the source of the twelfth transistor; one end of the thirteenth resistor is connected to the gate of the thirteenth transistor, and the other end is used to connect the ninth control signal; the drain of the fifteenth transistor is connected to the drain of the thirteenth transistor, and the source of the fifteenth transistor is connected to the ground; one end of the fifteenth resistor is connected to the gate of the fifteenth transistor, and the other end is used to connect the tenth control signal; the source of the thirteenth transistor is connected to the signal output end.

8. The structure for improving phase shift of a radio frequency attenuator according to claim 7, characterized in that: The fourth attenuation module also includes: a sixteenth transistor, a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a sixteenth resistor, a seventeenth resistor, an eighteenth resistor, a nineteenth resistor, a thirty-first resistor, a thirty-second resistor and a fourth inductor, wherein the signal input end is connected to the drain of the eighteenth transistor; one end of the eighteenth resistor is connected to the gate of the eighteenth transistor, and the other end is used to connect the tenth control signal; the source of the sixteenth transistor is connected to the source of the eighteenth transistor, and the source of the sixteenth transistor is connected to ground; one end of the sixteenth resistor is connected to the gate of the sixteenth transistor, and the other end is used to connect the ninth control signal; one end of the thirty-first resistor is connected to the source of the eighteenth transistor, and the other end is used to connect the ninth control signal. One end of the fourth inductor is connected to the source of the eighteenth transistor, and the other end is connected to one end of the thirty-second resistor, and the other end of the thirty-second resistor is connected to the drain of the nineteenth transistor; one end of the thirty-third resistor is connected to the drain of the nineteenth transistor, and the other end is connected to ground; one end of the nineteenth resistor is connected to the gate of the nineteenth transistor, and the other end is used to connect the tenth control signal; the drain of the seventeenth transistor is connected to the drain of the nineteenth transistor, and the source of the seventeenth transistor is connected to ground; one end of the seventeenth resistor is connected to the gate of the seventeenth transistor, and the other end is used to connect the ninth control signal; the source of the nineteenth transistor is connected to the signal output terminal.

9. The structure for improving phase shift of a radio frequency attenuator according to claim 8, characterized in that: The third control signal and the fourth control signal keep one of them at a high level and the other at a low level at the same time; the fifth control signal and the sixth control signal keep one of them at a high level and the other at a low level at the same time; the seventh control signal and the eighth control signal keep one of them at a high level and the other at a low level at the same time; the ninth control signal and the tenth control signal keep one of them at a high level and the other at a low level at the same time.

10. A method for improving phase shift of a radio frequency attenuator, characterized in that: The method comprises: adding an inductor module between the first transistor module and the second transistor module; Wherein, the RF attenuator includes a plurality of attenuation modules connected in series, the attenuation module is used to provide a predetermined attenuation amount, the attenuation module includes the first transistor module and the second transistor module connected to each other, when the first transistor module is turned on and the second transistor module is turned off, the attenuation module is in a reference state, when the first transistor module is turned off and the second transistor module is turned on, the attenuation module is in an attenuation state, in the reference state, the influence of the attenuation module on the signal is minimized, in the attenuation state, the attenuation module provides a predetermined attenuation amount, and the inductance module is used to compensate for the circuit phase when the attenuation module is in the attenuation state.

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