Laser etching path determination method and device, electronic equipment and storage medium

Abstract

This application provides a laser etching path determination method, apparatus, electronic device, and storage medium, relating to the field of laser etching path planning technology. In this application, firstly, the region size information of the processing area, the data model of the surface to be etched, and the pattern size information of the elements to be etched are obtained; secondly, based on the region size information, the data model, and the pattern size information, multiple elements to be etched are clustered to obtain at least one corresponding cluster; then, based on the cluster center of each cluster in the at least one cluster, the target laser etching path is determined. Based on the above, the problem of low reliability in laser etching path determination in the prior art can be improved.

Description

Technical Field

[0001] This application relates to the field of laser etching path planning technology, and more specifically, to a laser etching path determination method and apparatus, electronic equipment and storage medium. Background Technology

[0002] Ultrafast laser etching is used to etch pattern arrays, such as circular or square arrays, onto the surface of parts to achieve hydrophobic effects. In the ultrafast laser precision etching process, the ultrafast laser is generated by a laser and controlled by a high-precision scanning system containing galvanometers and field lenses to etch the laser beam onto the part surface. The scanning system formed by the galvanometers and field lenses typically has a small processing area, usually considered as a cubic region, such as 40×40×1mm. Since individual patterns in the etching array are usually smaller than the processing area, and the area of ​​the part to be etched is often larger than the processing area of ​​the scanning system, the etching process requires the CNC machine tool's motion system to continuously move the scanning system to change the processing area. Because the machining accuracy achieved by galvanometers and field lenses is often far higher than the motion accuracy of CNC machine tools, to improve etching accuracy, during the etching process, the CNC machine tool moves to the designated machining area and then stops. The scanning system etches within that area. After the current etching area is completed, the scanning system stops, and the CNC system moves the scanning system to the next machining area and stops there. This process is repeated until the entire part is etched. In other words, the CNC machine tool motion system and the etching scanning system are independent of each other and do not operate simultaneously.

[0003] As can be seen from the above etching process, the planning of the ultrafast laser etching path involves planning the position coordinates of the CNC system during the scanning system's operation, as well as planning the pattern of the sub-arrays that the scanning system needs to etch at that position. The planning result has a significant impact on the etching effect and efficiency. Existing path planning methods are primarily based on experience, typically planning and etching only for one or a batch of parts. The planned path cannot be applied to the etching of other parts. Especially when etching a large number of sub-arrays, or etching three-dimensional curved surfaces, existing methods cannot accurately and efficiently obtain the CNC system's movement position and the corresponding pattern to be etched. In other words, existing technologies suffer from low reliability in determining the laser etching path. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a laser etching path determination method and apparatus, electronic device and storage medium to improve the problem of low reliability of laser etching path determination in the prior art.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] A method for determining a laser etching path includes:

[0007] The processing area is obtained, along with the data model of the surface to be etched and the pattern size information of the etching array. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one location. The data model is a three-dimensional model. The etching array refers to an area that needs to be etched, and the surface to be etched has multiple etching arrays.

[0008] Based on the region size information, the data model, and the pattern size information, multiple etchable elements are clustered to obtain at least one corresponding cluster, wherein each cluster includes at least one etchable element.

[0009] Based on the cluster center of each of the at least one cluster, a target laser etching path is determined, wherein the target laser etching system is used to sequentially perform laser etching processing on multiple etchable arrays along the target laser etching path to form corresponding etchable arrays.

[0010] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of clustering multiple etchable elements based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster includes:

[0011] Based on the etchable elements, a corresponding split cluster is formed, wherein, before the first splitting process, the split cluster includes all the etchable elements.

[0012] Based on at least some of the information in the region size information, the data model, and the pattern size information, the cluster to be split is split to form two corresponding sub-clusters, and a set of undetermined clusters is formed based on all the sub-clusters formed in each splitting process.

[0013] Based on at least some of the information in the region size information, the data model, and the pattern size information, determine whether further splitting processing is needed;

[0014] When further splitting is required, one splitting sub-cluster is selected from all the splitting sub-clusters included in the set of undetermined clusters and designated as the target splitting sub-cluster.

[0015] The target split sub-cluster is taken as a new cluster to be split, and the process of splitting the cluster to be split based on at least some of the information in the region size information, the data model and the pattern size information is repeated to form two corresponding split sub-clusters. Based on all the split sub-clusters formed in each split process, a set of undetermined clusters is formed until no further split processing is needed. Each split sub-cluster in the set of undetermined clusters is taken as a cluster.

[0016] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of splitting the cluster to be split based on at least some of the information in the region size information, the data model, and the pattern size information to form two corresponding sub-clusters, and forming a set of clusters to be determined based on all the sub-clusters formed in each splitting process, includes:

[0017] Two undetermined splitting centers were identified in the cluster to be split;

[0018] Based on the position coordinates of each element to be etched in the data model, each element to be etched in the cluster to be split is assigned to the set of elements to be split that is closest to the nearest set of elements to be split, so as to form two sets of elements to be split.

[0019] For each of the undetermined sets, the center position coordinates of each etchable element in the undetermined set are determined based on the position coordinates of each etchable element in the undetermined set.

[0020] Based on the coordinates of the two center positions corresponding to the two undetermined sets and the two undetermined split centers, determine whether further allocation processing is needed.

[0021] When further allocation processing is required, the positions corresponding to the two center positions of the two undetermined sets are taken as two new undetermined split centers. The step of reversing the execution of the step of allocating each undetermined element in the undetermined cluster based on the position coordinates of each undetermined element in the data model, and allocating it to the undetermined set corresponding to the nearest undetermined split center, so as to form two corresponding undetermined sets.

[0022] When no further allocation processing is needed, the two undetermined sets formed by the last allocation process are taken as the two corresponding split subclusters, and the set of undetermined clusters is formed based on all the split subclusters formed by each split process.

[0023] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of determining whether further allocation processing is needed based on the coordinates of the two center positions corresponding to the two undetermined sets and the two undetermined splitting centers includes:

[0024] Determine whether the coordinates of the two center positions corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers;

[0025] When the coordinates of the two center positions corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers, it is determined that no further allocation processing is needed.

[0026] When the coordinates of the two center positions corresponding to the two undetermined sets are inconsistent with the coordinates of the two undetermined split centers, it is determined that further allocation processing is required.

[0027] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of determining whether further splitting processing is needed based on at least a portion of the information from the region size information, the data model, and the pattern size information includes:

[0028] For each split sub-cluster in the set of undetermined clusters, determine whether the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information. Matching the region size information and the pattern size information means that the etchable region determined by the etchable element based on the corresponding position coordinates and pattern size information is covered by the region determined based on the center position coordinates and region size information of the split sub-cluster. In the process of determining this region, the data model is rotated so that the normal vector of the center position of the split sub-cluster on the etchable surface is rotated to be parallel to the target coordinate axis of the data model to determine the region.

[0029] When each of the etchable elements in each of the split subclusters matches the region size information and the pattern size information, it is determined that no further splitting process is needed.

[0030] When each of the etchable elements in each of the split subclusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to continue.

[0031] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of determining a target sub-cluster from all the sub-clusters included in the set of undetermined clusters when further splitting processing is required includes:

[0032] When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, the splitting error parameter of the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model.

[0033] In each of the subclusters included in the set of undetermined clusters, a subcluster with the maximum value of the splitting error parameter is identified as the target subcluster.

[0034] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of determining the splitting error parameter of each splitting sub-cluster in the set of undetermined clusters, based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the splitting sub-cluster in the data model, when further splitting processing is required, includes:

[0035] When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, each etchable element in the split sub-cluster is classified based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model, to obtain the first type of etchable element and the second type of etchable element corresponding to the split sub-cluster.

[0036] For each split sub-cluster, the first error parameter corresponding to the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the first type of etchable elements corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model.

[0037] For each split sub-cluster, the second error parameter corresponding to the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the second type of etchable element corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model.

[0038] For each split sub-cluster, the splitting error parameters of the split sub-cluster are determined based on the first error parameter and the second error parameter corresponding to the split sub-cluster.

[0039] In a preferred embodiment of this application, in the above-described laser etching path determination method, the step of determining the splitting error parameters of each splitting sub-cluster based on the first error parameter and the second error parameter corresponding to that splitting sub-cluster includes:

[0040] A preset distance weighting coefficient is determined, wherein the distance weighting coefficient is greater than or equal to 1;

[0041] For each split sub-cluster, the second error parameter corresponding to the split sub-cluster is weighted based on the distance weighting coefficient, and the weighted result is summed with the first error parameter corresponding to the split sub-cluster to obtain the splitting error parameter of the split sub-cluster.

[0042] This application also provides a laser etching path determination device, including:

[0043] The etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the etch array. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position. The data model is a three-dimensional model. The etch array refers to an area that needs to be etched, and the surface to be etched has multiple etch arrays.

[0044] The etching array clustering module is used to perform clustering processing on multiple etching arrays based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster, wherein each cluster includes at least one etching array.

[0045] The etching path determination module is used to determine the target laser etching path based on the cluster center of each cluster in the at least one cluster, wherein the target laser etching system is used to sequentially perform laser etching processing on multiple etchable arrays along the target laser etching path to form corresponding etching arrays.

[0046] Based on the above, this application also provides an electronic device, including:

[0047] Memory, used to store computer programs;

[0048] A processor connected to the memory is used to execute the computer program stored in the memory to implement the laser etching path determination method described above.

[0049] Based on the above, this application also provides a computer-readable storage medium storing a computer program that, when executed, performs the various steps of the laser etching path determination method described above.

[0050] The laser etching path determination method, apparatus, electronic device, and storage medium provided in this application first acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the elements to be etched. Second, based on the area size information, data model, and pattern size information, multiple elements to be etched are clustered to obtain at least one corresponding cluster. Then, based on the cluster center of each cluster in the at least one cluster, the target laser etching path is determined. Based on the above, since multiple elements to be etched are clustered based on the area size information, data model, and pattern size information before path determination, the reliability of the clustering process is high. Therefore, the path determination based on the clustering results also has high reliability, making the determined target laser etching path more reliable. Thus, this improves the problem of low reliability in laser etching path determination in existing technologies. Attached Figure Description

[0051] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings.

[0052] Figure 1 A structural block diagram of an electronic device provided in an embodiment of this application.

[0053] Figure 2 This is a flowchart illustrating the laser etching path determination method provided in an embodiment of this application.

[0054] Figure 3 This is a schematic diagram of the etched surface provided in an embodiment of this application.

[0055] Figure 4 This is a schematic diagram of a cluster provided in an embodiment of this application.

[0056] Figure 5 This is a block diagram of a laser etching path determination device provided in an embodiment of this application. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0058] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0059] like Figure 1 As shown, this application provides an electronic device. The electronic device may include a memory, a processor, and a laser etching path determination device.

[0060] In detail, the memory and the processor are electrically connected directly or indirectly to enable data transmission or interaction. For example, the memory and the processor can be electrically connected via one or more communication buses or signal lines. The laser etching path determination device includes at least one software functional module stored in the memory in the form of software or firmware. The processor is used to execute executable computer programs stored in the memory, such as the software functional modules and computer programs included in the laser etching path determination device, to implement the laser etching path determination method provided in the embodiments of this application.

[0061] Optionally, the memory may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc.

[0062] Furthermore, the processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), a system on chip (SoC), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0063] Understandable. Figure 1 The structure shown is for illustrative purposes only; the electronic device may also include components that are more advanced than those shown. Figure 1 The more or fewer components shown, or having the same Figure 1 The different configurations shown may include, for example, a communication unit for exchanging information with other devices.

[0064] Combination Figure 2 This application also provides a laser etching path determination method applicable to the aforementioned electronic device. The method steps defined in the process related to the laser etching path determination method can be implemented by the electronic device.

[0065] The following will be about Figure 2 The specific process shown will be explained in detail.

[0066] Step S110: Obtain the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched.

[0067] In this embodiment, the electronic device can acquire the area size information (e.g., length, width, and height) of the processing area, the data model of the surface to be etched, and the pattern size information (e.g., length and width) of the pattern to be etched. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one location; the data model is a three-dimensional model; the pattern to be etched refers to an area to be etched, and the surface to be etched has multiple patterns to be etched. For example, as... Figure 3 As shown, the plane to be etched can be composed of two planes with an included angle of 135 degrees, which can be specifically represented by the corresponding data model. Furthermore, the "plane to be etched" refers to the material in the corresponding region that needs to be etched away. Figure 3 In the middle, it could mean that the material inside the circle needs to be etched away.

[0068] Step S120: Based on the region size information, the data model, and the pattern size information, clustering is performed on the multiple etchable elements to obtain at least one corresponding cluster.

[0069] In this embodiment, the electronic device can cluster multiple etchable elements based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster. That is, similar etchable elements can be grouped together for etching. Each cluster includes at least one etchable element. For example, combined with... Figure 4 This can form 16 clusters. Each of the 12 clusters includes 4 elements to be etched, and each of the 4 clusters includes 2 elements to be etched.

[0070] Step S130: Determine the target laser etching path based on the cluster center of each cluster in the at least one cluster.

[0071] In this embodiment, the electronic device can determine a target laser etching path based on the cluster center of each of the at least one cluster. The target laser etching system is used to sequentially perform laser etching processing on multiple elements to be etched along the target laser etching path to form corresponding etching arrays. Figure 4 As shown, the target laser etching path formed can be cluster 1-cluster 2-cluster 3-cluster 4-cluster 1-cluster 6-cluster 7-cluster 8-cluster 9-cluster 10-cluster 11-cluster 12-cluster 13-cluster 14-cluster 15-cluster 16.

[0072] Based on the above, since multiple etchable elements are clustered based on region size information, data model, and pattern size information before path determination, the reliability of the clustering process is high. Therefore, the path determination based on the clustering results can also have high reliability, making the determined target laser etching path more reliable. Thus, it can improve the problem of low reliability in laser etching path determination in the prior art, thereby achieving better results when etching based on the laser etching path.

[0073] It should be noted that for step S120, the specific method of clustering the multiple arrays to be etched is not limited and can be selected according to actual needs.

[0074] For example, in an alternative implementation, in order to ensure the reliability of the clustering process, the above step S120 may further include steps S121, S122, S123, S124 and S125, the specific contents of each step are as follows.

[0075] Step S121: Based on the array to be etched, form the corresponding cluster to be split.

[0076] In this embodiment, a corresponding cluster to be split can be formed based on the elements to be etched. Before the first splitting process, the cluster to be split includes all the elements to be etched. That is, the first cluster to be split includes all the elements to be etched.

[0077] Step S122: Based on at least some of the information in the region size information, the data model, and the pattern size information, the cluster to be split is split to form two corresponding sub-clusters, and a set of undetermined clusters is formed based on all the sub-clusters formed in each splitting process.

[0078] In this embodiment, after forming the cluster to be split, the cluster can be split based on at least some of the information in the region size information, the data model, and the pattern size information to form two corresponding sub-clusters. A set of undetermined clusters is then formed based on all the sub-clusters formed in each splitting process. In other words, unrelated etchable elements within the cluster to be split can be split into two different sub-clusters based on at least some of the information in the region size information, the data model, and the pattern size information.

[0079] Step S123: Based on at least some of the information in the region size information, the data model, and the pattern size information, determine whether further splitting processing is needed.

[0080] In this embodiment of the application, after splitting the cluster to be split into two sub-clusters, it can be determined whether further splitting is needed based on at least some of the information in the region size information, the data model, and the pattern size information.

[0081] Step S124: When it is necessary to continue the splitting process, determine one splitting sub-cluster from all the splitting sub-clusters included in the set of undetermined clusters, and use it as the target splitting sub-cluster.

[0082] In this embodiment of the application, when it is determined that further splitting is required, a splitting sub-cluster can be identified from all the splitting sub-clusters included in the set of undetermined clusters, and then this identified splitting sub-cluster can be used as the target splitting sub-cluster.

[0083] Step S125: The target split sub-cluster is taken as a new cluster to be split, and the process of splitting the cluster to be split based on at least some of the information in the region size information, the data model and the pattern size information is repeated to form two corresponding split sub-clusters. The process of forming a set of undetermined clusters based on all the split sub-clusters formed in each split process is repeated until no further split processing is required. Each split sub-cluster in the set of undetermined clusters is taken as a cluster.

[0084] In this embodiment, after determining the target split sub-cluster, the target split sub-cluster can be used as a new cluster to be split. The step of splitting the cluster to be split based on at least some of the information in the region size information, the data model, and the pattern size information to form two corresponding split sub-clusters, and forming a set of undetermined clusters based on all the split sub-clusters formed in each splitting process, continues until no further splitting is needed. Each split sub-cluster in the undetermined cluster set is then used as a cluster, i.e., step S122 is executed again. For example, firstly, all the etchable elements can be combined to form the first cluster to be split. Then, the etchable elements in the first cluster to be split can be split to form split sub-cluster 1 and split sub-cluster 2. Then, it is determined whether further splitting is needed. If not, split sub-cluster 1 and split sub-cluster 2 are used as clusters, resulting in two clusters. If necessary, a splitting subcluster is selected from splitting subcluster 1 and splitting subcluster 2. For example, splitting subcluster 1 is selected as the target splitting subcluster. Then, the target splitting subcluster is selected as the new cluster to be split (i.e., the second cluster to be split) for splitting, resulting in splitting subcluster 3 and splitting subcluster 4. Then, it is determined again whether further splitting is needed. If not, splitting subcluster 2, splitting subcluster 3, and splitting subcluster 4 are each selected as a cluster, resulting in three clusters. If necessary, a splitting subcluster is selected from splitting subcluster 2, splitting subcluster 3, and splitting subcluster 4. For example, splitting subcluster 2 is selected as the target splitting subcluster. Then, the target splitting subcluster is selected as the new cluster to be split (i.e., the third cluster to be split) for splitting, resulting in splitting subcluster 5 and splitting subcluster 6. Then, it is determined again whether further splitting is needed, and so on.

[0085] It is understood that in step S122 above, the specific method of splitting the clusters to be split and forming a set of clusters to be determined is not limited and can be selected according to actual needs.

[0086] For example, in an alternative implementation, in order to enable reliable etching paths to be determined based on the clusters formed by the split, the above step S122 may further include steps S122a, S122b, S122c, S122d, S122e, and S122f, the specific contents of each step of which are described below.

[0087] Step S122a: Two undetermined splitting centers are identified in the cluster to be split.

[0088] In this embodiment of the application, after forming the cluster to be split, two undetermined splitting centers can be determined within the cluster. Exemplarily, two elements to be etched can be randomly determined as the two undetermined splitting centers. It should be noted that the undetermined splitting center can refer to the center of an element to be etched, such as the center of a circular element to be etched. Exemplarily, the determined undetermined splitting center may not be the center of an element to be etched, but may be a region outside the element to be etched.

[0089] Step S122b: Based on the position coordinates of each element to be etched in the data model, each element in the cluster to be split is assigned to the nearest undetermined set corresponding to the undetermined splitting center, so as to form two corresponding undetermined sets.

[0090] In this embodiment, after forming two undetermined split centers, each undetermined element in the cluster to be split can be assigned to the undetermined set corresponding to the nearest undetermined split center based on its position coordinates in the data model, thus forming two corresponding undetermined sets. For example, if undetermined element 1 is closer to the first undetermined split center, then undetermined element 1 is assigned to the undetermined set corresponding to the first undetermined split center; if undetermined element 2 is closer to the second undetermined split center, then undetermined element 2 is assigned to the undetermined set corresponding to the second undetermined split center.

[0091] Step S122c: For each set of objects to be etched, determine the center coordinates of each object to be etched in the set of objects to be etched based on the position coordinates of each object to be etched in the set of objects to be etched.

[0092] In this embodiment of the application, after forming two sets to be determined, for each set to be determined, the center position coordinates of each element to be etched in the set can be determined based on the position coordinates of each element to be etched in the set. The average position coordinates of the center of each element to be etched in the set can be calculated to obtain the center position coordinates of the set to be determined.

[0093] Step S122d: Based on the coordinates of the two center positions corresponding to the two undetermined sets and the two undetermined split centers, determine whether further allocation processing is needed.

[0094] In this embodiment of the application, after obtaining the center position coordinates corresponding to the two sets of undetermined objects, it can be determined whether further allocation processing is needed based on the two center position coordinates corresponding to the two sets of undetermined objects and the two undetermined split centers.

[0095] Step S122e: When further allocation processing is required, the positions corresponding to the two center coordinates of the two undetermined sets are taken as two new undetermined split centers. The step of reversing the execution of the step of allocating each undetermined element in the undetermined cluster based on the position coordinates of each undetermined element in the data model, and allocating it to the undetermined set corresponding to the nearest undetermined split center, so as to form two corresponding undetermined sets.

[0096] In this embodiment of the application, when it is determined that further splitting processing is required, the positions corresponding to the two center positions of the two undetermined sets can be used as two new undetermined splitting centers. The step of reversing the execution of the step S122b is performed by allocating each undetermined element in the undetermined cluster to the undetermined set corresponding to the nearest undetermined splitting center based on the position coordinates of each undetermined element in the data model.

[0097] In step S122f, when no further allocation processing is needed, the two undetermined sets formed by the last allocation processing are taken as the two corresponding split subclusters, and an undetermined cluster set is formed based on all the split subclusters formed by each split processing.

[0098] In this embodiment, when it is determined that no further allocation processing is needed, the two undetermined sets formed in the last allocation process are taken as the corresponding two split subclusters, and an undetermined cluster set is formed based on all the split subclusters formed in each split process. Exemplarily, in other embodiments, it can also be determined whether further split processing is needed by judging whether the newly formed undetermined set overlaps with the previously formed undetermined set. For example, if the newly formed undetermined set overlaps with the previously formed undetermined set (or the overlap is greater than a preset value), it can be determined that no further split processing is needed; conversely, if the newly formed undetermined set does not overlap with the previously formed undetermined set (or the overlap is less than a preset value), it can be determined that further split processing is needed.

[0099] It is understood that, in an alternative implementation, step S122d described above may further include the following specific implementation details:

[0100] First, it can be determined whether the coordinates of the two centers corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers;

[0101] Then, if the coordinates of the two center positions corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers, it can be determined that no further allocation processing is needed.

[0102] Finally, when the coordinates of the two centers corresponding to the two undetermined sets are inconsistent with the coordinates of the two undetermined split centers, it is determined that the allocation process needs to continue; that is, it can be iterated until the coordinates of the two centers corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers, and then the two corresponding split subclusters are formed.

[0103] It is understandable that in step S123 above, there are no restrictions on the specific method for determining whether further splitting is needed, and the choice can be made according to actual needs.

[0104] For example, in an alternative implementation, in order to ensure the reliability of the split subclusters formed by the split, the above step S123 may further include steps S123a, S123b and S123c, the specific contents of each step are as follows.

[0105] Step S123a: For each split sub-cluster in the set of undetermined clusters, determine whether the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information.

[0106] In this embodiment, for each sub-cluster in the set of undetermined clusters, the distance between the position coordinates of each element to be etched in the data model and the center position coordinates of the sub-cluster in the data model can be determined, and whether it matches the region size information and the pattern size information. For example, the edge points of the element to be etched can be determined based on the position coordinates of the element to be etched and the pattern size information. Then, the distance between each edge point and the center position coordinates of the sub-cluster is calculated, and the farthest edge point is determined based on this distance. Finally, if the edge point is located in the region determined by the center position coordinates and the region size information, it is considered a match. That is, it is necessary to ensure that each point of the element to be etched belongs to the processing region centered on the center position coordinates. Specifically, matching the region size information and the pattern size information means that the region to be etched, determined based on the corresponding position coordinates and pattern size information of the sub-cluster, is covered by the region determined based on the center position coordinates and region size information of the split sub-cluster. Furthermore, during the determination of this region, the data model is rotated so that the normal vector of the center position of the split sub-cluster on the surface to be etched is rotated to be parallel to the target coordinate axis of the data model to determine this region. In other words, the processing region of the split sub-cluster (i.e., the cluster center) can be determined in the following way: obtain the cluster center P. knormal vector Rotate the data model to P k Centered on rotation, rotation causes Rotate the model until it is parallel to the Z-axis. The XOY plane of the data model is a plane composed of the length and width of the surface to be etched. This allows us to obtain the processing area with the cluster center as the processing center. Furthermore, the cluster center P... k normal vector P can be taken k The normal vector to the nearest point on the surface to be etched can also be P. k The normal vector of the projection point of the surface to be etched along the Z-axis.

[0107] Step S123b: When each of the etchable elements in each of the split subclusters matches the region size information and the pattern size information, it is determined that no further splitting processing is needed.

[0108] In this embodiment of the application, after obtaining the corresponding matching comparison results, it can be determined that no further splitting processing is needed when each of the etchable elements in each of the split subclusters matches the region size information and the pattern size information.

[0109] Step S123c: When each of the etchable elements in each of the split subclusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to continue.

[0110] In this embodiment of the application, after obtaining the corresponding matching comparison results, it can be determined that further splitting processing is needed when each of the etchable elements in each of the split subclusters does not match the region size information and the pattern size information. Alternatively, it can be determined that further splitting processing is needed when at least one of the etchable elements in at least one of the split subclusters does not match the region size information and the pattern size information.

[0111] It is understandable that in step S124 above, the specific method for determining the target split subcluster is not restricted and can be selected according to actual needs.

[0112] For example, in an alternative implementation, in order to improve the efficiency and reliability of splitting and ensure the efficiency and reliability of clustering, the above step S124 may further include steps S124a and S124b, the specific contents of each step being as follows.

[0113] Step S124a: When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, the splitting error parameter of the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model.

[0114] In this embodiment of the application, when further splitting is required, for each split sub-cluster included in the set of undetermined clusters, the splitting error parameter of the split sub-cluster can be determined based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model. For example, the distance and the splitting error parameter can have a positive correlation.

[0115] Step S124b: In each of the splitting subclusters included in the set of undetermined clusters, determine a splitting subcluster with the maximum value of the splitting error parameter, and use it as the target splitting subcluster.

[0116] In this embodiment, after determining the splitting error parameters, a splitting subcluster with the maximum splitting error parameter can be identified from each splitting subcluster included in the set of undetermined clusters, and this subcluster can be selected as the target splitting subcluster. That is, when splitting is required, each time the splitting subcluster with the maximum splitting error parameter can be identified from all the current splitting subclusters, the splitting process can be performed again to reduce the corresponding splitting error parameter.

[0117] It is understandable that in step S124a above, the specific method for determining the splitting error parameters of the splitting subclusters is not limited and can be selected according to actual needs.

[0118] For example, in an alternative implementation, in order to speed up the splitting process and ensure that the etchable elements after splitting are located in the corresponding processing area, step S124a may further include steps a1, a2, a3, and a4, the specific contents of each step of which are described below.

[0119] Step a1: When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model, each etchable element in the split sub-cluster is classified to obtain the first type and the second type of etchable elements corresponding to the split sub-cluster.

[0120] In this embodiment, when further splitting is required, for each sub-cluster included in the set of undetermined clusters, each un-etched element in the sub-cluster can be classified based on the distance between the position coordinates of each un-etched element in the data model and the center position coordinates of the sub-cluster in the data model, resulting in a first type and a second type of un-etched elements corresponding to the sub-cluster. For example, un-etched elements already in the processing area centered on the center position coordinates can be assigned to the first type of un-etched elements, and un-etched elements not yet in the processing area centered on the center position coordinates can be assigned to the second type of un-etched elements.

[0121] Step a2: For each split sub-cluster, based on the distance between the position coordinates of each etchable element in the first type of etchable elements corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, the first error parameter corresponding to the split sub-cluster is determined.

[0122] In this embodiment, after obtaining the first type of etchable elements, for each split sub-cluster, a first error parameter corresponding to the split sub-cluster can be determined based on the distance between the position coordinates of each etchable element in the first type of etchable elements in the data model and the center position coordinates of the split sub-cluster in the data model. For example, the sum of the squares of each distance can be calculated as the first error parameter.

[0123] Step a3: For each split sub-cluster, based on the distance between the position coordinates of each etchable element in the second type of etchable elements corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine the second error parameter corresponding to the split sub-cluster.

[0124] In this embodiment, after obtaining the second type of etchable elements, for each split sub-cluster, a second error parameter corresponding to the split sub-cluster can be determined based on the distance between the position coordinates of each etchable element in the second type of etchable elements corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. For example, the sum of the squares of each distance can be calculated as the second error parameter.

[0125] Step a4: For each split sub-cluster, the splitting error parameter of the split sub-cluster is determined based on the first error parameter and the second error parameter corresponding to the split sub-cluster.

[0126] In this embodiment, after obtaining the corresponding first error parameter and second error parameter, for each split sub-cluster, the splitting error parameter of the split sub-cluster can be determined based on the first error parameter and second error parameter corresponding to the split sub-cluster. That is, the first error parameter and the second error parameter can be fused to obtain the splitting error parameter.

[0127] It is understood that the specific implementation of step a4 in the above embodiments is not limited. For example, in order to improve the reliability and efficiency of the splitting process, it may include:

[0128] First, a preset distance weighting coefficient is determined, wherein the distance weighting coefficient is greater than or equal to 1; for example, in a specific application, the distance weighting coefficient may be equal to 10.

[0129] Secondly, for each split sub-cluster, the second error parameter corresponding to the split sub-cluster is weighted (e.g., multiplied) based on the distance weighting coefficient, and the weighted result is summed with the first error parameter corresponding to the split sub-cluster to obtain the splitting error parameter of the split sub-cluster.

[0130] It should be noted that for step S130, the specific method for determining the target laser etching path is not limited and can be selected according to actual needs.

[0131] For example, in an alternative implementation, after obtaining the at least one cluster, the cluster centers of all clusters can be projected onto the XOY plane and then sorted from left to right and from bottom to top. Algorithms such as ant colony sorting can also be used to sort them, thereby forming the corresponding target laser etching path. Exemplarily, based on this, the position that the CNC system needs to move can be determined. In other implementations, the laser scanning path of the elements to be etched at that position can be further determined (specifically, this can be determined by considering the specific pattern shape of the elements, the distribution of the elements, etc.).

[0132] It should be noted that the laser etching process based on the above-mentioned target laser etching path is a three-axis, five-axis or higher CNC machining program, or a robot machining program.

[0133] Combination Figure 5 This application also provides a laser etching path determination device applicable to the aforementioned electronic device. The laser etching path determination device may include an etching information acquisition module, an etching array clustering module, and an etching path determination module.

[0134] The etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the etching array. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one location. The data model is a three-dimensional model. The etching array refers to an area to be etched, and the surface to be etched has multiple etching arrays. In this embodiment, the etching information acquisition module can be used to perform... Figure 2 For details regarding the etching information acquisition module in step S110, please refer to the preceding description of step S110.

[0135] The etching element clustering module is used to cluster multiple etching elements based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster. Each cluster includes at least one etching element, and the clustering process also includes the normal vector of the cluster center on the surface to be etched. In this embodiment, the etching element clustering module can be used to perform... Figure 2 The details of step S120, and the relevant content regarding the etching array clustering module, can be found in the previous description of step S120.

[0136] The etching path determination module is used to determine a target laser etching path based on the cluster center of each of the at least one cluster. The target laser etching system is used to sequentially perform laser etching on multiple elements to be etched along the target laser etching path to form corresponding etching arrays. In this embodiment, the etching path determination module can be used to execute... Figure 2 The details of step S130, including the etching path determination module, can be found in the preceding description of step S130.

[0137] In this embodiment of the application, corresponding to the laser etching path determination method applied to the electronic device described above, a computer-readable storage medium is also provided. This computer-readable storage medium stores a computer program, which executes the various steps of the laser etching path determination method when it runs. The steps executed by the aforementioned computer program are not described in detail here, but can be found in the preceding explanation of the laser etching path determination method.

[0138] In summary, the laser etching path determination method, apparatus, electronic device, and storage medium provided in this application first acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the elements to be etched. Second, based on the area size information, data model, and pattern size information, multiple elements to be etched are clustered to obtain at least one corresponding cluster. Then, based on the cluster center of each cluster in the at least one cluster, the target laser etching path is determined. Based on the above, since multiple elements to be etched are clustered based on the area size information, data model, and pattern size information before path determination, the reliability of the clustering process is high. Therefore, the path determination based on the clustering results also has high reliability, making the determined target laser etching path more reliable. This improves the problem of low reliability in laser etching path determination in the prior art, resulting in better etching performance based on this laser etching path.

[0139] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus and method embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0140] In addition, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0141] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, electronic device, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks. It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. In the absence of further restrictions, an element defined by the phrase "comprising a..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0142] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for determining a laser etching path, characterized in that, include: The processing area is obtained, along with the data model of the surface to be etched and the pattern size information of the etching array. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one location. The data model is a three-dimensional model. The etching array refers to an area that needs to be etched, and the surface to be etched has multiple etching arrays. Based on the region size information, the data model, and the pattern size information, multiple etchable elements are clustered to obtain at least one corresponding cluster, wherein each cluster includes at least one etchable element. Based on the cluster center of each cluster in the at least one cluster, a target laser etching path is determined, wherein the target laser etching system is used to sequentially perform laser etching on multiple etchable arrays along the target laser etching path to form corresponding etchable arrays; The step of clustering multiple etchable elements based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster includes: Based on the etchable elements, a corresponding split cluster is formed, wherein, before the first splitting process, the split cluster includes all the etchable elements. Based on at least some of the information in the region size information, the data model, and the pattern size information, the cluster to be split is split to form two corresponding sub-clusters. Based on all the sub-clusters formed in each splitting process, a set of undetermined clusters is formed, including: determining two undetermined splitting centers in the cluster to be split; assigning each undetermined element in the cluster to be split to the undetermined set corresponding to the nearest undetermined splitting center based on the position coordinates of each undetermined element in the data model, forming two corresponding undetermined sets; for each undetermined set, determining the center position coordinates of each undetermined element in the undetermined set based on the position coordinates of each undetermined element in the undetermined set; based on the two undetermined... The two center coordinates of the set and the two undetermined split centers are used to determine whether further allocation processing is needed. If further allocation processing is needed, the positions corresponding to the two center coordinates of the two undetermined sets are used as the two new undetermined split centers. The step of allocating each undetermined element in the undetermined cluster based on its position coordinates in the data model is then executed to assign it to the undetermined set corresponding to the nearest undetermined split center, thus forming two corresponding undetermined sets. If further allocation processing is not needed, the two undetermined sets formed by the last allocation process are used as the two corresponding split sub-clusters, and all the split sub-clusters formed by each split process are used to form the undetermined cluster set. Based on at least some of the information in the region size information, the data model, and the pattern size information, determine whether further splitting processing is needed; When further splitting is required, one splitting sub-cluster is selected from all the splitting sub-clusters included in the set of undetermined clusters and designated as the target splitting sub-cluster. The target split sub-cluster is taken as a new cluster to be split, and the process of splitting the cluster to be split based on at least some of the information in the region size information, the data model and the pattern size information is repeated to form two corresponding split sub-clusters. Based on all the split sub-clusters formed in each split process, a set of undetermined clusters is formed until no further split processing is needed. Each split sub-cluster in the set of undetermined clusters is taken as a cluster.

2. The laser etching path determination method according to claim 1, characterized in that, The step of determining whether further allocation processing is needed based on the coordinates of the two center positions corresponding to the two undetermined sets and the two undetermined split centers includes: Determine whether the coordinates of the two center positions corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers; When the coordinates of the two center positions corresponding to the two undetermined sets are consistent with the coordinates of the two undetermined split centers, it is determined that no further allocation processing is needed. When the coordinates of the two center positions corresponding to the two undetermined sets are inconsistent with the coordinates of the two undetermined split centers, it is determined that further allocation processing is required.

3. The laser etching path determination method according to claim 1, characterized in that, The step of determining whether further splitting processing is needed based on at least some of the information in the region size information, the data model, and the pattern size information includes: For each split sub-cluster in the set of undetermined clusters, determine whether the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information. Matching the region size information and the pattern size information means that the etchable region determined by the etchable element based on the corresponding position coordinates and pattern size information is covered by the region determined based on the center position coordinates and region size information of the split sub-cluster. In the process of determining this region, the data model is rotated so that the normal vector of the center position of the split sub-cluster on the etchable surface is rotated to be parallel to the target coordinate axis of the data model to determine the region. When each of the etchable elements in each of the split subclusters matches the region size information and the pattern size information, it is determined that no further splitting process is needed. When each of the etchable elements in each of the split subclusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to continue.

4. The laser etching path determination method according to claim 1, characterized in that, The step of determining a target sub-cluster from all the sub-clusters included in the set of undetermined clusters when further splitting is required includes: When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, the splitting error parameter of the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model. In each of the subclusters included in the set of undetermined clusters, a subcluster with the maximum value of the splitting error parameter is identified as the target subcluster.

5. The laser etching path determination method according to claim 4, characterized in that, When further splitting processing is required, the step of determining the splitting error parameters of each split sub-cluster in the set of undetermined clusters, based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model, includes: When further splitting is required, for each split sub-cluster included in the set of undetermined clusters, each etchable element in the split sub-cluster is classified based on the distance between the position coordinates of each etchable element in the data model and the center position coordinates of the split sub-cluster in the data model, to obtain the first type of etchable element and the second type of etchable element corresponding to the split sub-cluster. For each split sub-cluster, the first error parameter corresponding to the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the first type of etchable elements corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. For each split sub-cluster, the second error parameter corresponding to the split sub-cluster is determined based on the distance between the position coordinates of each etchable element in the second type of etchable element corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. For each split sub-cluster, the splitting error parameters of the split sub-cluster are determined based on the first error parameter and the second error parameter corresponding to the split sub-cluster.

6. The laser etching path determination method according to claim 5, characterized in that, The step of determining the splitting error parameters of each splitting sub-cluster based on the first error parameter and the second error parameter corresponding to that splitting sub-cluster includes: A preset distance weighting coefficient is determined, wherein the distance weighting coefficient is greater than or equal to 1; For each split sub-cluster, the second error parameter corresponding to the split sub-cluster is weighted based on the distance weighting coefficient, and the weighted result is summed with the first error parameter corresponding to the split sub-cluster to obtain the splitting error parameter of the split sub-cluster.

7. A laser etching path determination device, characterized in that, For performing the laser etching path determination method according to any one of claims 1-6, the laser etching path determination device comprises: The etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the etch array. The processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position. The data model is a three-dimensional model. The etch array refers to an area that needs to be etched, and the surface to be etched has multiple etch arrays. The etching array clustering module is used to perform clustering processing on multiple etching arrays based on the region size information, the data model, and the pattern size information to obtain at least one corresponding cluster, wherein each cluster includes at least one etching array. The etching path determination module is used to determine the target laser etching path based on the cluster center of each cluster in the at least one cluster, wherein the target laser etching system is used to sequentially perform laser etching processing on multiple etchable arrays along the target laser etching path to form corresponding etching arrays.

8. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor connected to the memory is used to execute the computer program stored in the memory to implement the laser etching path determination method according to any one of claims 1-6.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium contains a computer program that, when executed, performs the laser etching path determination method according to any one of claims 1-6.

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