A temperature compensation system and method for epitaxial equipment

Abstract

The present application relates to the technical field of epitaxial equipment, and specifically provides a temperature compensation system and method for epitaxial equipment, the system comprising: a first temperature acquisition component; a second temperature acquisition component; a pressure acquisition component; a flow acquisition component; a controller, which is used to obtain the free coefficient information of the component gas of each intake channel according to the component gas type information and the preset conversion relationship, and is also used to obtain the gas mole number per unit time of the component gas of each intake channel according to the intake pressure information, the intake flow information and the intake temperature information, and is also used to calculate the total heat gap according to the reaction chamber temperature information, the intake temperature information, all the free coefficient information and all the gas mole number per unit time information, and then adjust the power of the heating component based on the total heat gap; the system can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or it is difficult to reach the target temperature because the process gas introduced into the reaction chamber will take away the heat of the epitaxial wafer.

Description

Technical Field

[0001] The present application relates to the technical field of epitaxial equipment, and in particular to a temperature compensation system and method for epitaxial equipment. Background Art

[0002] The epitaxial growth process forms an epitaxial layer on the surface of the epitaxial layer by causing the process gas introduced into the reaction chamber to react chemically on the surface of the epitaxial wafer. In the epitaxial growth process, the reaction chamber needs to continuously introduce process gas, and the temperature of the process gas introduced into the reaction chamber is lower than the temperature of the epitaxial wafer. Therefore, the process gas introduced into the reaction chamber will take away the heat of the epitaxial wafer, causing the temperature of the epitaxial wafer to fluctuate or be difficult to reach the target temperature, thereby affecting the growth effect of the epitaxial layer.

[0003] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the invention

[0004] The purpose of the present application is to provide a temperature compensation system and method for epitaxial equipment, which can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or it is difficult to reach the target temperature because the process gas introduced into the reaction chamber takes away the heat of the epitaxial wafer.

[0005] In a first aspect, the present application provides a temperature compensation system for an epitaxial device, the epitaxial device comprising a reaction chamber, a heating assembly and a plurality of gas inlet channels, different gas inlet channels being used to transport different component gases, the temperature compensation system for the epitaxial device comprising:

[0006] A first temperature collection component is used to collect temperature information of the reaction chamber;

[0007] Each intake channel is provided with a second temperature acquisition component, a pressure acquisition component and a flow acquisition component. The second temperature acquisition component is used to acquire the intake temperature information of the component gas in the intake channel where it is located, the pressure acquisition component is used to acquire the intake pressure information of the component gas in the intake channel where it is located, and the flow acquisition component is used to acquire the intake flow information of the component gas in the intake channel where it is located;

[0008] A controller is used to obtain component gas type information corresponding to each intake channel, and obtain freedom coefficient information of the component gas in each intake channel based on the component gas type information and a preset conversion relationship, and is also used to obtain gas mole number per unit time information of the component gas in each intake channel based on intake pressure information, intake flow information and intake temperature information, and is also used to calculate a total heat gap based on reaction chamber temperature information, intake temperature information, all freedom coefficient information and all gas mole number per unit time information, and then adjust the power of the heating component based on the total heat gap.

[0009] The present application provides a temperature compensation system for epitaxial equipment, which can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component based on the total heat gap. That is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature. Therefore, the present application can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer.

[0010] Optionally, the process of acquiring information on the number of gas moles per unit time of the component gases in each intake channel according to the intake pressure information, the intake flow information and the intake temperature information includes:

[0011] The information on the number of gas moles per unit time of the component gases in each intake channel is obtained based on the ideal gas equation according to the intake pressure information, the intake flow information and the intake temperature information.

[0012] Optionally, the calculation formula of the gas mole number information per unit time is as shown in formula (1):

[0013] (1);

[0014] Among them, n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, P i represents the intake pressure information of the component gas in the i-th intake channel, q i represents the intake flow information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 进i Represents the intake temperature information of the component gas in the i-th intake passage.

[0015] Optionally, the process of calculating the total heat gap according to the reaction chamber temperature information, the inlet temperature information, all the free coefficient information and all the gas mole number information per unit time includes:

[0016] Calculating the heat gap of the component gas in each intake channel according to the reaction chamber temperature information, the intake temperature information, the free coefficient information and the gas mole number per unit time information;

[0017] The sum of all calorie deficits is taken as the total calorie deficit.

[0018] Optionally, the calculation formula for the total heat gap is as shown in formula (2):

[0019] (2);

[0020] Among them, Q 总 represents the total heat gap, m represents the total number of intake channels, Q i represents the heat gap of the component gas in the i-th intake channel;

[0021] The calculation formula of the heat gap of the component gas in the i-th intake channel is shown in formula (3):

[0022] (3);

[0023] n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, f i represents the free coefficient information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 反 Represents the temperature information of the reaction chamber, T 进i Represents the intake temperature information of the component gas in the i-th intake passage.

[0024] Optionally, the process of adjusting the power of the heating component based on the total heat deficit includes:

[0025] Calculate compensation power based on total heat deficit and preset compensation ratio;

[0026] The power of the heating component is adjusted according to the compensation power.

[0027] Optionally, the calculation formula of the compensation power is shown in formula (5):

[0028] (5);

[0029] Where P represents the compensation power, Q 总 represents the total heat gap, and a represents the preset compensation ratio.

[0030] Optionally, the process of obtaining component gas type information corresponding to each intake channel includes:

[0031] The component gas type information corresponding to each gas inlet channel is obtained according to the preset epitaxial process parameter information.

[0032] Optionally, the preset conversion relationship is a mapping relationship table of gas type and freedom coefficient information.

[0033] In a second aspect, the present application further provides a temperature compensation method for an epitaxial device, the temperature compensation method for an epitaxial device is applied in the temperature compensation system for an epitaxial device provided in the first aspect above, and the temperature compensation method for an epitaxial device comprises the following steps:

[0034] S1. Obtaining component gas type information corresponding to each air intake channel, and obtaining free coefficient information of the component gas in each air intake channel according to the component gas type information and a preset conversion relationship;

[0035] S2. acquiring information on the number of gas moles per unit time of the component gases in each intake channel according to the intake pressure information, the intake flow information and the intake temperature information;

[0036] S3. Calculate the total heat gap according to the reaction chamber temperature information, the inlet temperature information, all the free coefficient information and all the gas mole number information per unit time, and then adjust the power of the heating component based on the total heat gap.

[0037] The present application provides a temperature compensation method for epitaxial equipment, which can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component based on the total heat gap. That is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature. Therefore, the present application can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer.

[0038] From the above, it can be seen that the temperature compensation system and method for epitaxial equipment provided by the present application can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component based on the total heat gap. That is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature. Therefore, the present application can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic structural diagram of a temperature compensation system for epitaxial equipment provided in an embodiment of the present application.

[0040] Figure 2 A schematic diagram of the control relationship of a temperature compensation system for epitaxial equipment provided in an embodiment of the present application.

[0041] Figure 3 A flow chart of a temperature compensation method for epitaxial equipment provided in an embodiment of the present application.

[0042] Figure numerals: 1. first temperature acquisition component; 2. second temperature acquisition component; 3. pressure acquisition component; 4. flow acquisition component; 5. controller; 6. reaction chamber; 7. heating component; 8. air inlet channel. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0044] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0045] First, as Figure 1-Figure 2 As shown, the present application provides a temperature compensation system for epitaxial equipment, the epitaxial equipment includes a reaction chamber 6, a heating assembly 7 and a plurality of gas inlet channels 8, different gas inlet channels 8 are used to transport different component gases, and the temperature compensation system for epitaxial equipment includes:

[0046] The first temperature collection component 1 is used to collect the temperature information of the reaction chamber;

[0047] Each intake channel 8 is provided with a second temperature acquisition component 2, a pressure acquisition component 3 and a flow acquisition component 4. The second temperature acquisition component 2 is used to acquire the intake temperature information of the component gas in the intake channel 8 where it is located, the pressure acquisition component 3 is used to acquire the intake pressure information of the component gas in the intake channel 8 where it is located, and the flow acquisition component 4 is used to acquire the intake flow information of the component gas in the intake channel 8 where it is located;

[0048] The controller 5 is used to obtain the component gas type information corresponding to each intake channel 8, and obtain the freedom coefficient information of the component gas in each intake channel 8 according to the component gas type information and the preset conversion relationship, and is also used to obtain the gas mole number per unit time of the component gas in each intake channel 8 according to the intake pressure information, the intake flow information and the intake temperature information, and is also used to calculate the total heat gap according to the reaction chamber temperature information, the intake temperature information, all the freedom coefficient information and all the gas mole number per unit time information, and then adjust the power of the heating component 7 based on the total heat gap.

[0049] The epitaxial device of this embodiment includes a reaction chamber 6, a heating component 7 and a plurality of air inlet channels 8. A placement table for placing epitaxial wafers is provided in the reaction chamber 6. The reaction chamber 6 has an air inlet and an air outlet. The air inlet channels 8 of this embodiment are used to transport component gases. Different air inlet channels 8 transport different component gases. The component gases entering the reaction chamber 6 will mix to form process gases. The process gases in the reaction chamber 6 can flow out of the reaction chamber 6 through the air outlet. The heating component 7 of this embodiment can be a component that can heat an object, such as an induction coil or a halogen lamp. Specifically, the heating component 7 of this embodiment is arranged outside the reaction chamber 6. Since the reaction chamber 6 can exchange heat with the epitaxial wafer placed therein, the heating component 7 of this embodiment can heat the epitaxial wafer by heating the reaction chamber 6, and the temperature of the epitaxial wafer can be increased or decreased by increasing or decreasing the power of the heating component 7. The first temperature acquisition component 1 of this embodiment is preferably an infrared pyrometer, which is arranged outside the reaction chamber 6. The first temperature acquisition component 1 is used to collect the temperature information of the reaction chamber, and the temperature information of the reaction chamber is the temperature in the reaction chamber 6. The second temperature acquisition component 2 of this embodiment can be a component capable of measuring temperature, such as a temperature sensor or a temperature measuring instrument. The second temperature acquisition component 2 is arranged on the intake passage 8, and the second temperature acquisition component 2 is used to collect the intake temperature information of the component gas in the intake passage 8 where it is located. The pressure acquisition component 3 of this embodiment can be a component capable of detecting pressure, such as a pressure gauge or a pressure gauge. The pressure acquisition component 3 is arranged on the intake passage 8, and the pressure acquisition component 3 is used to collect the intake pressure information of the component gas in the intake passage 8 where it is located. The flow acquisition component 4 of this embodiment is preferably a mass flow meter. The flow acquisition component 4 is arranged on the intake passage 8, and the flow acquisition component is used to collect the intake flow information of the component gas in the intake passage 8 where it is located.

[0050] The controller 5 of this embodiment is electrically connected to the first temperature acquisition component 1, the second temperature acquisition component 2, the pressure acquisition component 3 and the flow acquisition component 4 respectively. Before starting the epitaxial growth process, relevant personnel will set the component gas to be input into each air inlet channel 8 during the epitaxial growth process according to the target epitaxial wafer parameters (the parameters of the epitaxial wafer to be obtained after the epitaxial growth process is completed), that is, the component gas type information corresponding to each air inlet channel 8 is a preset parameter. Therefore, this embodiment can directly obtain the component gas type information corresponding to each air inlet channel 8. The preset conversion relationship of this embodiment can convert the type of gas into free coefficient information. Since the component gas type information can reflect the type of component gas, this embodiment can obtain the free coefficient information of the component gas in each air inlet channel 8 according to the component gas type information and the preset conversion relationship. This embodiment can use the existing gas mole number per unit time calculation formula to obtain the gas mole number per unit time information of the component gas in each intake channel 8 according to the intake pressure information, intake flow information and intake temperature information. The gas mole number per unit time information is the mole number of the component gas input into the reaction chamber 6 per unit time. The specific process of this embodiment to calculate the total heat gap according to the reaction chamber temperature information, the intake temperature information, all free coefficient information and all gas mole number per unit time information can be: calculate the constant-pressure heat capacity of the component gas in each intake channel 8 based on the free coefficient information; calculate the heat gap of the component gas in each intake channel 8 based on the thermodynamic formula according to the constant-pressure heat capacity of the component gas in each intake channel 8, the reaction chamber temperature information, the intake temperature information and the corresponding gas mole number per unit time information; sum all heat gaps to obtain the total heat gap. Since the total heat gap of this embodiment is the heat required to adjust the temperature of the process gas entering the reaction chamber 6 to the temperature information of the reaction chamber per unit time, and the temperature of the reaction chamber 6 is similar to the temperature of the epitaxial wafer, that is, the total heat gap is equivalent to the heat taken away from the epitaxial wafer by the process gas entering the reaction chamber 6 per unit time, and this embodiment can compensate the temperature of the epitaxial wafer by adjusting the power of the heating component 7 based on the total heat gap, this embodiment can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or it is difficult to reach the target temperature (the temperature or ideal temperature required for the process gas to undergo a chemical reaction on the surface of the epitaxial wafer) due to the process gas entering the reaction chamber 6 taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer.

[0051] The present application provides a temperature compensation system for epitaxial equipment, which can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component 7 based on the total heat gap, that is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature, so the present application can effectively avoid the situation that the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber 6 taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer. In addition, since the heat absorption amount of different types of gases heated to the same temperature is different under the same other conditions, and this embodiment determines the total heat gap based on the type of each component gas introduced into the reaction chamber 6, the embodiment can effectively improve the calculation accuracy of the total heat gap, thereby effectively avoiding the situation that the temperature of the epitaxial wafer still fluctuates or is difficult to reach the target temperature due to the insufficient calculation accuracy of the total heat gap, and the calculated total heat gap is less than the heat actually taken away from the epitaxial wafer by the process gas.

[0052] In some preferred embodiments, the process of obtaining the gas mole number per unit time of the component gas in each intake channel 8 according to the intake pressure information, the intake flow information and the intake temperature information includes:

[0053] The information on the number of gas moles per unit time of the component gases in each intake passage 8 is obtained based on the ideal gas equation according to the intake pressure information, the intake flow information and the intake temperature information.

[0054] The intake pipe radius information of this embodiment is a pre-measured value. It can be seen from the existing ideal gas equation that the number of gas moles per unit time is related to the gas pressure, the gas volume per unit time, the gas temperature and the ideal gas constant. Since the intake temperature information, the intake pressure information and the ideal gas constant are all known values, and the intake flow information is equivalent to the volume of the component gas delivered per unit time, that is, the intake flow information is equivalent to the gas volume per unit time, this embodiment can obtain the gas mole number per unit time information of the component gas in each intake channel 8 based on the ideal gas equation according to the intake pressure information, the intake flow information and the intake temperature information.

[0055] In some preferred embodiments, the calculation formula of the gas mole number per unit time is as shown in formula (1):

[0056] (1);

[0057] Among them, n i represents the gas mole number per unit time of the component gas in the i-th intake channel 8, P i represents the intake pressure information of the component gas in the i-th intake channel 8, q irepresents the intake flow information of the component gas in the i-th intake channel 8, R represents the ideal gas constant, T 进i Indicates the intake temperature information of the component gas in the i-th intake passage 8.

[0058] In some preferred embodiments, the process of calculating the total heat gap according to the reaction chamber temperature information, the inlet temperature information, all the free coefficient information and all the gas mole number information per unit time includes:

[0059] Calculate the heat gap of the component gas in each intake channel 8 according to the reaction chamber temperature information, the intake temperature information, the free coefficient information and the gas mole number per unit time information;

[0060] The sum of all calorie deficits is taken as the total calorie deficit.

[0061] The heat gap in this embodiment is the heat required to heat the component gas in the corresponding air inlet channel 8 to the reaction chamber temperature information per unit time.

[0062] In some preferred embodiments, the calculation formula of the total heat gap is as shown in formula (2):

[0063] (2);

[0064] Among them, Q 总 represents the total heat gap, m represents the total number of intake channels 8, Q i represents the heat gap of the component gas in the i-th intake channel 8;

[0065] The calculation formula of the heat gap of the component gas in the i-th intake channel 8 is shown in formula (3):

[0066] (3);

[0067] n i represents the gas mole information per unit time of the component gas in the i-th intake channel 8, f i represents the free coefficient information of the component gas in the i-th intake channel 8, R represents the ideal gas constant, T 反 Represents the temperature information of the reaction chamber, T 进i represents the intake temperature information of the component gas in the i-th intake passage 8. It should be understood that (f i ×R) / 2 is the constant pressure heat capacity mentioned in the above embodiment. It should also be understood that since 1 / R in formula (1) can be eliminated from R in formula (3), formula (3) can be simplified to formula (4):

[0068] (4).

[0069] In some preferred embodiments, the process of adjusting the power of the heating component 7 based on the total heat deficit includes:

[0070] Calculate compensation power based on total heat deficit and preset compensation ratio;

[0071] The power of the heating assembly 7 is adjusted according to the compensation power.

[0072] The preset compensation ratio of this embodiment is a preset value. Since the heating component 7 cannot convert all energy into heat, the preset compensation ratio of this embodiment is preferably greater than 1.

[0073] In some preferred implementations, the calculation formula for the compensation power is shown in formula (5):

[0074] (5);

[0075] Where P represents the compensation power, Q 总 represents the total heat gap, and a represents the preset compensation ratio.

[0076] In some preferred embodiments, the process of obtaining the component gas type information corresponding to each inlet channel 8 includes:

[0077] The component gas type information corresponding to each gas inlet channel 8 is obtained according to the preset epitaxial process parameter information.

[0078] The epitaxial process parameter information of this embodiment is a parameter designed by relevant personnel according to the target epitaxial wafer parameters before the epitaxial growth process. The epitaxial process parameter information includes parameters such as the composition of the process gas (equivalent to the component gas that needs to be input into each gas inlet channel 8), the duration of the process gas introduction, the temperature that the epitaxial wafer needs to reach, and the gas pressure in the reaction chamber 6.

[0079] In some preferred embodiments, the preset conversion relationship is a mapping relationship table about gas type and freedom coefficient information. The mapping relationship table of this embodiment can be a database or a mapping relationship. Specifically, the gas types include monatomic gas, diatomic gas and polyatomic gas (gas with more than 2 atoms in a single molecule), the freedom coefficient information corresponding to monatomic gas is 3, the freedom coefficient information corresponding to diatomic gas is 5, and the freedom coefficient information corresponding to polyatomic gas is 6. The monatomic gas of this embodiment can be argon, the diatomic gas of this embodiment can be nitrogen, hydrogen or oxygen, and the polyatomic gas of this embodiment can be ammonia.

[0080] In some preferred embodiments, the heating assembly 7 includes a plurality of heating units, and the arrangement direction of the plurality of heating units is parallel to the flow direction of the process gas in the reaction chamber 6. The controller 5 is further used to calculate the power to be increased of each heating unit according to the compensation power and the preset weight corresponding to each heating unit, and then increase the power of the heating unit by the corresponding power to be increased. The preset weight corresponding to the heating unit close to the air inlet of the reaction chamber 6 is greater than the preset weight corresponding to the heating unit far from the air inlet of the reaction chamber 6, and the sum of all the preset weights is 1. Since the process gas introduced into the reaction chamber 6 will be heated up continuously during the flow process, that is, the heat taken away from the epitaxial wafer region close to the air inlet of the reaction chamber 6 is greater than the heat taken away from the epitaxial wafer region far from the air inlet of the reaction chamber 6, and this embodiment is equivalent to making the power of the heating unit close to the air inlet of the reaction chamber 6 greater than the power of the heating unit far from the air inlet of the reaction chamber 6, so this embodiment can effectively improve the temperature uniformity of the epitaxial wafer, thereby effectively avoiding the situation that the temperature of different regions of the epitaxial wafer is different due to temperature compensation for different regions of the epitaxial wafer based on the same power, and the growth effect of the epitaxial layer is affected.

[0081] From the above, it can be seen that the temperature compensation method for epitaxial equipment provided by the present application can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component 7 based on the total heat gap. That is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature. Therefore, the present application can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber 6 taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer.

[0082] Second, as Figure 3 As shown, the present application also provides a temperature compensation method for an epitaxial device, the temperature compensation method for an epitaxial device is applied in the temperature compensation system for an epitaxial device provided in the first aspect above, and the temperature compensation method for an epitaxial device comprises the following steps:

[0083] S1. Obtaining component gas type information corresponding to each air intake channel 8, and obtaining free coefficient information of the component gas in each air intake channel 8 according to the component gas type information and a preset conversion relationship;

[0084] S2. Obtaining information on the number of gas moles per unit time of the component gases in each intake channel 8 according to the intake pressure information, the intake flow information and the intake temperature information;

[0085] S3. Calculate the total heat gap according to the reaction chamber temperature information, the inlet temperature information, all the free coefficient information and all the gas mole number information per unit time, and then adjust the power of the heating component 7 based on the total heat gap.

[0086] An embodiment of the present application provides a temperature compensation method for an epitaxial device, and the temperature compensation method for an epitaxial device is applied in the temperature compensation system for an epitaxial device provided in the first aspect. The principle of the temperature compensation method for an epitaxial device provided in this embodiment is the same as the principle of the temperature compensation system for an epitaxial device provided in the first aspect, and will not be discussed in detail here.

[0087] From the above, it can be seen that the temperature compensation system and method for epitaxial equipment provided by the present application can perform temperature compensation on the epitaxial wafer by first calculating the total heat gap and then adjusting the power of the heating component 7 based on the total heat gap. That is, the present application can stabilize the temperature of the epitaxial wafer at the target temperature. Therefore, the present application can effectively avoid the situation where the temperature of the epitaxial wafer fluctuates or is difficult to reach the target temperature due to the process gas introduced into the reaction chamber 6 taking away the heat of the epitaxial wafer, thereby effectively improving the growth effect of the epitaxial layer.

[0088] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the above-mentioned units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another robot, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interface, the indirect coupling or communication connection of the device or unit can be electrical, mechanical or other forms.

[0089] In addition, the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be raised to one place or distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0090] Furthermore, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

[0091] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0092] The above description is only an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of protection of the present application.

Claims

1. A temperature compensation system for epitaxial equipment, characterized in that: The epitaxial device includes a reaction chamber, a heating assembly and a plurality of gas inlet channels, wherein different gas inlet channels are used to transport different component gases. The temperature compensation system for the epitaxial device includes: A first temperature collection component is used to collect temperature information of the reaction chamber; Each intake channel is provided with a second temperature acquisition component, a pressure acquisition component and a flow acquisition component, wherein the second temperature acquisition component is used to acquire the intake temperature information of the component gas in the intake channel where it is located, the pressure acquisition component is used to acquire the intake pressure information of the component gas in the intake channel where it is located, and the flow acquisition component is used to acquire the intake flow information of the component gas in the intake channel where it is located; A controller, used for obtaining component gas type information corresponding to each of the intake channels, and obtaining free coefficient information of the component gas in each of the intake channels according to the component gas type information and a preset conversion relationship, wherein the preset conversion relationship is a mapping relationship table of gas type and free coefficient information, wherein the gas types include monatomic gas, diatomic gas and polyatomic gas, the free coefficient information corresponding to the monatomic gas is 3, the free coefficient information corresponding to the diatomic gas is 5, and the free coefficient information corresponding to the polyatomic gas is 6, and further used for obtaining gas mole number per unit time information of the component gas in each of the intake channels according to the intake pressure information, the intake flow information and the intake temperature information, and further used for calculating a total heat gap according to the reaction chamber temperature information, the intake temperature information, all the free coefficient information and all the gas mole number per unit time information, and then adjusting the power of the heating component based on the total heat gap; The calculation formula of the gas mole number per unit time is as follows: ； Among them, n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, P i represents the intake pressure information of the component gas in the i-th intake channel, q i represents the intake flow information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 进i represents the intake temperature information of the component gas in the i-th intake passage; The calculation formula of the total heat gap is as follows: ； Among them, Q 总 represents the total heat gap, m represents the total number of intake channels, Q i represents the heat gap of the component gas in the i-th intake channel; The calculation formula of the heat gap of the component gas in the i-th inlet channel is as follows: ； n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, f i represents the free coefficient information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 反 Represents the temperature information of the reaction chamber, T 进i Represents the intake temperature information of the component gas in the i-th intake passage.

2. The temperature compensation system for epitaxial equipment according to claim 1, characterized in that: The process of adjusting the power of the heating component based on the total heat deficit includes: Calculating the compensation power according to the total heat gap and the preset compensation ratio; The power of the heating component is adjusted according to the compensation power.

3. The temperature compensation system for epitaxial equipment according to claim 2, characterized in that: The calculation formula of the compensation power is shown in formula (5): （5）； Where P represents the compensation power, Q 总 represents the total heat gap, and a represents the preset compensation ratio.

4. The temperature compensation system for epitaxial equipment according to claim 1, characterized in that: The process of obtaining the component gas type information corresponding to each of the intake channels includes: The component gas type information corresponding to each of the gas inlet channels is obtained according to the preset epitaxial process parameter information.

5. A temperature compensation method for epitaxial equipment, characterized in that: The temperature compensation method for epitaxial equipment is applied in the temperature compensation system for epitaxial equipment according to any one of claims 1 to 4, and the temperature compensation method for epitaxial equipment comprises the following steps: S1, obtaining component gas type information corresponding to each of the intake channels, and obtaining free coefficient information of the component gas in each of the intake channels according to the component gas type information and a preset conversion relationship, wherein the preset conversion relationship is a mapping relationship table between gas type and free coefficient information, wherein the gas types include monatomic gas, diatomic gas and polyatomic gas, wherein the free coefficient information corresponding to the monatomic gas is 3, the free coefficient information corresponding to the diatomic gas is 5, and the free coefficient information corresponding to the polyatomic gas is 6; S2. According to the intake pressure information, the intake flow information and the intake temperature information, the gas mole number per unit time information of the component gas in each of the intake channels is obtained. The calculation formula of the gas mole number per unit time information is as follows: ； Among them, n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, P i represents the intake pressure information of the component gas in the i-th intake channel, q i represents the intake flow information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 进i represents the intake temperature information of the component gas in the i-th intake passage; S3, calculating the total heat gap according to the reaction chamber temperature information, the inlet temperature information, all the free coefficient information and all the gas mole number information per unit time, and then adjusting the power of the heating component based on the total heat gap. The calculation formula of the total heat gap is shown as follows: ； Among them, Q 总 represents the total heat gap, m represents the total number of intake channels, Q i represents the heat gap of the component gas in the i-th intake channel; The calculation formula of the heat gap of the component gas in the i-th inlet channel is as follows: ； n i Indicates the gas mole information per unit time of the component gas in the i-th intake channel, f i represents the free coefficient information of the component gas in the i-th intake channel, R represents the ideal gas constant, T 反 Represents the temperature information of the reaction chamber, T 进i Represents the intake temperature information of the component gas in the i-th intake passage.

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