Substrate processing system and substrate processing method using the same

Abstract

A substrate processing system and a substrate processing method are disclosed. The substrate processing method includes: performing an exposure process on a substrate; removing moisture on the substrate after the exposure process; performing a wetting process on the substrate from which the moisture is removed; and performing a drying process on the substrate after the wetting process. The step of removing moisture on the substrate includes measuring a weight of the substrate and heating the substrate whose weight is measured. The step of performing the drying process on the substrate includes placing the substrate in a drying chamber and supplying a supercritical fluid to the drying chamber to dry the fluid on the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0087156 filed on July 5, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a substrate processing system and a substrate processing method using the same, and more particularly, to a substrate processing system capable of removing moisture on a substrate before processing the substrate using a supercritical fluid and a substrate processing method using the same. Background Art

[0004] Semiconductor devices can be manufactured by various processes. For example, semiconductor devices can be manufactured by photolithography processes, etching processes, deposition processes, and electroplating processes. During the photolithography process for manufacturing semiconductor devices, a wetting process can be performed to apply a liquid such as a developer to a wafer. In addition, a drying process can be performed / performed to remove the liquid applied to the wafer. Various methods can be used to apply the liquid to the wafer or remove the liquid from the wafer. Summary of the invention

[0005] Some embodiments of the inventive concept provide a substrate processing system capable of removing moisture on a substrate to prevent contamination, and a substrate processing method using the substrate processing system.

[0006] Some embodiments of the inventive concept provide a substrate processing system capable of removing moisture on a substrate while reducing damage to the substrate, and a substrate processing method using the substrate processing system.

[0007] Some embodiments of the inventive concept provide a substrate processing system capable of improving a product yield and a substrate processing method using the substrate processing system.

[0008] The objects of the inventive concept are not limited to the above contents, and other objects not mentioned above will be clearly understood by those skilled in the art from the following description.

[0009] According to some embodiments of the present inventive concept, a substrate processing method may include: performing an exposure process on a substrate; after the exposure process, removing moisture on the substrate; performing a wetting process on the substrate from which the moisture has been removed; and after the wetting process, performing a drying process on the substrate. The step of removing moisture on the substrate may include: measuring the weight of the substrate; and heating the substrate from which the weight has been measured. The step of performing a drying process on the substrate may include: placing the substrate in a drying chamber; and supplying a supercritical fluid to the drying chamber to dry the fluid on the substrate.

[0010] According to some embodiments of the present inventive concept, a substrate processing method may include: performing a photolithography process on a substrate; after the photolithography process, transferring the substrate to a substrate drying system; and performing a cleaning process on the substrate using the substrate drying system. Performing the cleaning process may include: after transferring the substrate to the substrate drying system, removing moisture from the substrate; after removing the moisture, performing a wetting process on the substrate; and after completing the wetting process, performing a drying process on the substrate. The step of removing moisture from the substrate may include heating the substrate. The step of performing the drying process on the substrate may include supplying a supercritical fluid to the substrate to dry the fluid on the substrate.

[0011] According to some embodiments of the present invention, a substrate processing system may include a substrate drying system. The substrate drying system may include: a first substrate weight measuring device configured to measure the weight of a substrate; a heating device configured to heat a substrate taken out from the first substrate weight measuring device; a wetting device configured to spray a fluid onto the substrate taken out from the heating device; and a drying device configured to dry the substrate taken out from the wetting device. The first substrate weight measuring device may include: a measuring chamber providing a measuring space; a measuring table in the measuring chamber; and a weight detection sensor configured to detect the weight of a substrate disposed on the measuring table. The drying device may include: a drying chamber; and a drying fluid supply portion configured to supply a supercritical fluid to the drying chamber.

[0012] Details of other example embodiments are included in the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A simplified schematic diagram illustrating a substrate processing system according to some embodiments of the present inventive concepts is shown.

[0014] Figure 2 A cross-sectional view illustrating a wetting device according to some embodiments of the inventive concept is shown.

[0015] Figure 3 A cross-sectional view illustrating a substrate weight measuring device according to some embodiments of the inventive concept is shown.

[0016] Figure 4 A plan view illustrating a substrate weight measuring device according to some embodiments of the inventive concept is shown.

[0017] Figure 5 A cross-sectional view illustrating a drying device according to some embodiments of the present inventive concept is shown.

[0018] Figure 6 A simplified schematic diagram illustrating a dry fluid supply according to some embodiments of the present inventive concept is shown.

[0019] Figure 7 A flow chart illustrating a substrate processing method according to some embodiments of the inventive concept is shown.

[0020] Figures 8 to 16 Shows the Figure 7 FIG. 1 is a flow chart of a substrate processing method. DETAILED DESCRIPTION

[0021] Some embodiments of the inventive concept will be described below with reference to the accompanying drawings. Throughout the specification, the same reference numerals may indicate the same components.

[0022] Figure 1 A simplified schematic diagram illustrating a substrate processing system according to some embodiments of the present inventive concepts is shown.

[0023] Reference Figure 1 , a substrate processing system SPS may be provided. The substrate processing system SPS may be a device for processing a substrate in a semiconductor manufacturing process. For example, the substrate processing system SPS may be a device that allows a substrate to undergo an exposure process, a wetting process, and a drying process. For example, the substrate processing system SPS may perform an exposure process, a wetting process, and / or a drying process on a substrate. The substrate processing system SPS may be configured to radiate light to a substrate, provide a fluid to wet a substrate, and / or remove a fluid from a substrate to dry and clean the substrate. In this specification, the term "substrate" may refer to a semiconductor wafer. The wafer may include a silicon (Si) wafer or may be a silicon (Si) wafer, but the inventive concept is not limited thereto. The substrate processing system SPS may include a photolithography processing system PS and a substrate drying system DS or may be formed by a photolithography processing system PS and a substrate drying system DS.

[0024] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items and may be abbreviated as " / ".

[0025] The lithography processing system PS may perform a lithography process on a substrate. The lithography processing system PS may include an exposure device EC and a first heating device BCA. The exposure device EC may perform an exposure process on the substrate. For example, the exposure device EC may irradiate extreme ultraviolet (EUV) radiation onto the substrate. The first heating device BCA may heat the substrate. For example, the first heating device BCA may perform a baking process on the substrate. The first heating device BCA will be discussed in further detail below.

[0026] The substrate drying system DS may be spaced apart from the photolithography processing system PS. A substrate that has passed through the photolithography processing system PS (e.g., processed by the photolithography processing system PS) may be transferred to the substrate drying system DS. For example, the first conveying unit TU1 may transfer a substrate released / taken out from the photolithography processing system PS to the substrate drying system DS. The substrate drying system DS may perform a wetting process and a drying process on the substrate. The substrate drying system DS may include a loading port LP, a conveying zone TZ, a wetting device B, a second conveying unit TU2, a substrate weight measuring device M, a drying device A, a second heating device BC, a cooling device CPC, and a controller C.

[0027] The loading port LP may be a port on which a substrate is loaded. For example, the loading port LP may load thereon a substrate that has undergone various semiconductor manufacturing processes (e.g., processed in various semiconductor manufacturing processes). A plurality of loading ports LP may be provided in the substrate drying system DS. A plurality of substrates may be loaded on the plurality of loading ports LP. For example, a corresponding substrate may be loaded on each loading port LP. Unless otherwise specifically stated, for ease of description, a single loading port LP will be discussed. For example, a single loading port LP may represent each loading port LP.

[0028] The transfer zone TZ may be a zone for transferring a substrate loaded on a load port LP. For example, the second transfer unit TU2 may transfer a substrate loaded on a load port LP to a wetting device B and / or a drying device A. The transfer zone TZ may cover a plurality of load ports LP. For example, the transfer zone TZ may be connected to a plurality of load ports LP so that the second transfer unit TU2 accesses a plurality of load ports LP.

[0029] The wetting device B may be an apparatus for performing a wetting process on a substrate. The wetting device B may include a wetting chamber WC and a fluid supply part FS.

[0030] The wetting chamber WC can provide a space in which a wetting process is performed. When a substrate is disposed in the wetting chamber WC, a liquid, such as various chemicals and / or isopropyl alcohol (IPA), can be coated on the substrate. Liquid coating can be achieved in various ways. For example, the liquid can be sprayed onto a rotating substrate, and the centrifugal force can evenly distribute the liquid on the substrate. Multiple wetting chambers WC can be disposed in the wetting device B. For example, two wetting chambers WC can be disposed in the wetting device B. The two wetting chambers WC can be arranged to face each other. For example, two wetting chambers WC can be arranged side by side. However, for ease of explanation, a single wetting chamber WC will be discussed below, and a single wetting chamber WC can represent each wetting chamber WC. The following will refer to Figure 2 The wetting chamber WC is discussed in further detail.

[0031] Fluid supply FS can supply fluid to wetting chamber WC. Fluid supply FS can include a fluid tank and a pump. Process fluid can be defined as the fluid that indicates fluid supply FS supplies to wetting chamber B. Process fluid can include various chemicals and / or water or be formed by various chemicals and / or water. For example, process fluid can include or can be developer or isopropyl alcohol (IPA).

[0032] The second conveying unit TU2 may convey the substrate. For example, the second conveying unit TU2 may convey the substrate loaded on the load port LP to the wetting device B through the conveying zone TZ. For example, the second conveying unit TU2 may convey the substrate from the load port LP to the wetting device B through the conveying zone TZ. In addition, the second conveying unit TU2 may unload the substrate from the wetting device B, and then may convey the unloaded substrate to the drying device A. The second conveying unit TU2 may include an actuator such as a motor. One second conveying unit TU2 may be provided, but the inventive concept is not limited thereto.

[0033] The substrate weight measuring device M may measure the weight of the substrate. For example, before the substrate passes through the wetting device B and / or the second heating device BC, the substrate weight measuring device M may measure the weight of the substrate. However, the inventive concept is not limited thereto, and the substrate weight measuring device M may measure the weight of the substrate that has passed through the wetting device B. The substrate weight measuring device M may include a measuring chamber 1, an air supply portion SP, and an exhaust portion EP.

[0034] The measuring chamber 1 can provide a space for performing weight measurement. When the measuring chamber 1 receives therein a substrate coated with a process fluid released / taken out from the wetting device B, the weight of the substrate and the weight of the fluid on the substrate are measured. For example, the weight of the substrate can be measured in a separate space, or the weight of the substrate can be measured in the measuring chamber 1. The measuring chamber 1 can be located near the wetting chamber WC. For example, the measuring chamber 1 can be positioned adjacent to the wetting chamber WC. For example, in one embodiment, there is no other chamber between the measuring chamber 1 and the wetting chamber WC. For example, the measuring chamber 1 and the wetting chamber WC can share a side wall placed between the measuring chamber 1 and the wetting chamber WC, or the side wall of the measuring chamber 1 can contact the side wall of the wetting chamber WC. The following will refer to Figure 3 and Figure 4 The measurement chamber 1 is discussed in further detail.

[0035] It should be understood that when an element is referred to as being "connected" or "coupled" to or "on" another element, it may be directly connected or coupled to or on another element, or there may be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to or "contacting" or "in contact with" another element, there are no intervening elements at the point of contact. Other words used to describe the relationship between elements should be interpreted in a similar manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," "combination" versus "direct combination," etc.).

[0036] The air supply part SP can supply air. For example, the air supply part SP can supply air to the measuring chamber 1. The air supply part SP can control the pressure, humidity and / or temperature of the measuring chamber 1. The air supply part SP may include various components capable of supplying air to the measuring chamber 1. For example, the air supply part SP may include a temperature humidity air controller (THC). Therefore, air with constant pressure, humidity and temperature can be supplied to the measuring chamber 1. However, the inventive concept is not limited thereto, and the air supply part SP may include a fan and / or a compressor. A detailed description thereof will be further discussed below.

[0037] The exhaust part EP may exhaust air from the measurement chamber 1. For example, the exhaust part EP may draw air away from the measurement chamber 1 to allow the measurement chamber 1 to maintain its pressure at a specific / predetermined level. For example, the exhaust part EP may control the air pressure in the measurement chamber 1 by controlling the air flowing out of the measurement chamber 1. The exhaust part EP may include various components for drawing out air. For example, the exhaust part EP may include a pump.

[0038] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items and may be abbreviated as " / ".

[0039] The drying device A may be an apparatus for drying a substrate. The drying device A may dry and / or clean a substrate that has passed through the wetting device B and / or the substrate weight measuring device M. For example, the drying device A may remove liquid from a substrate on which a liquid such as a developer and / or isopropyl alcohol (IPA) is applied in the wetting device B. The drying device A may include a drying chamber 9 and a drying fluid supply portion 3.

[0040] The drying chamber 9 may provide a space in which a drying process is performed. The drying chamber 9 may be located near the measuring chamber 1. For example, the drying chamber 9 may be positioned adjacent to the measuring chamber 1. For example, there may be no other chamber between the measuring chamber 1 and the measuring chamber 1. For example, the measuring chamber 1 and the drying chamber 9 may share a side wall placed between the measuring chamber 1 and the drying chamber 9, or the side wall of the measuring chamber 1 may contact the side wall of the drying chamber 9. A plurality of drying chambers 9 may be provided in the drying device A. For example, two drying chambers 9 may be provided in the drying device A. The two drying chambers 9 may be arranged to face each other. For example, the two drying chambers 9 may be arranged on opposite sides of the conveying zone TZ. However, for ease of explanation, a single drying chamber A will be discussed below. A single drying chamber A may represent each drying chamber 9.

[0041] The drying fluid supply part 3 may supply fluid to the drying chamber 9. For example, the drying fluid supply part 3 may supply a drying fluid introduced into the drying chamber 9. The drying fluid supplied from the drying fluid supply part 3 may be carbon dioxide (CO 2 The carbon dioxide (CO ) introduced into the drying chamber 9 2 ) can be in a supercritical fluid (SCF) state. Figure 5 and Figure 6 The drying device A is discussed in further detail.

[0042] The second heating device BC can heat the substrate. For example, the second heating device BC can remove moisture from the substrate. The second heating device BC can include a chuck and a heater. The second heating device BC can have a structure that is the same, substantially the same, or similar to that of the first heating device BCA, but the inventive concept is not limited thereto. The second heating device BC will be discussed in further detail below.

[0043] As used herein, terms such as "same", "equal", "planar" or "coplanar" encompass the same or nearly the same, and nearly the same includes variations that may occur, for example, due to manufacturing processes. Unless the context or other statements indicate otherwise, the term "substantially" may be used herein to emphasize this meaning.

[0044] The cooling device CPC may cool the substrate. The cooling device CPC may reduce the temperature of the substrate. The cooling device CPC may include a cooling plate provided with cooling holes.

[0045] The controller C may control the wetting device B, the substrate weight measuring device M and the drying device A. The controller C may control the drying fluid supply part 3 to adjust the drying degree of the substrate. For example, the controller C may control the flow rate of the drying fluid supplied to the drying chamber 9. A detailed description thereof will be further discussed below.

[0046] Figure 2A cross-sectional view illustrating a wetting device according to some embodiments of the inventive concept is shown.

[0047] Reference Figure 2 The wetting device B may further include a wetting table WT, a wetting nozzle WN and a bowl BW.

[0048] The wetting table WT may be located in the wetting chamber WC. The wetting table WT may support a substrate. For example, a substrate inserted into the wetting chamber WC may be disposed on the wetting table WT. The wetting table WT may rotate the substrate. A detailed description thereof will be further discussed below.

[0049] The wetting nozzle WN may be spaced apart upward from the wetting table WT. The wetting nozzle WN may be connected to the fluid supply FS. The wetting nozzle WN may be supplied with the process fluid from the fluid supply FS and may spray the process fluid toward the wetting table WT.

[0050] For ease of description, spatially relative terms such as "below", "beneath", "down", "above", "upward", etc. may be used herein to describe the relationship of one element or feature to another element or feature as shown in the accompanying drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation shown in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the term "below" can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

[0051] A bowl BW may surround the wetting table WT. The bowl BW may collect process fluid pushed outwardly from the wetting table WT.

[0052] Figure 3 A cross-sectional view illustrating a substrate weight measuring device according to some embodiments of the inventive concept is shown.

[0053] In the present description, symbol D1 may indicate a first direction, symbol D2 may indicate a second direction crossing the first direction D1, and symbol D3 may indicate a third direction crossing each of the first direction D1 and the second direction D2. The first direction D1 may be a vertical direction. Each of the second direction D2 and the third direction D3 may be a horizontal direction.

[0054] Reference Figure 3The substrate weight measuring device M may include a measuring chamber 1, a measuring door DR, a measuring table 5, a separation plate 8, a weight detection sensor 7, a filter FT, an inlet damper DP1, an outlet damper DP2, a first differential pressure sensor PS1 and a second differential pressure sensor PS2.

[0055] The measuring chamber 1 may provide a measuring space 1h. The measuring chamber 1 may separate the measuring space 1h from an external space outside the measuring chamber 1. The external space may be a space outside the measuring chamber 1 (e.g., outside the measuring chamber 1). For example, the interior of the measuring chamber 1 may be isolated from the outside of the measuring chamber 1 when, for example, the weight of the substrate W is measured. The weight of the substrate may be measured in a state where the substrate is arranged in the measuring space 1h. The measuring chamber 1 may have a hexahedral appearance and / or a cylindrical appearance. The measuring chamber 1 may also provide an insertion hole 1dh, an air inlet 1ah, and an air outlet 1ae.

[0056] The insertion hole 1dh may penetrate one side of the measurement chamber 1. The insertion hole 1dh may connect the measurement space 1h to the external space. A substrate may be introduced into the measurement chamber 1 through the insertion hole 1dh. In addition, a substrate may be taken out of the measurement chamber 1 through the insertion hole 1dh. The insertion hole 1dh may be formed on a side surface of the measurement chamber 1 (e.g., in a side wall of the measurement chamber 1), but the inventive concept is not limited thereto. The measurement door DR may selectively open or close the insertion hole 1dh.

[0057] The air inlet 1ah may penetrate one side of the measuring chamber 1. The air inlet 1ah may connect the measuring space 1h to the external space. The air in the external space of the measuring chamber 1 may be introduced into the measuring space 1h through the air inlet 1ah. The air inlet 1ah may be spaced apart from the insertion hole 1dh. For example, the air inlet 1ah may be a hole that is separately provided / distinguished from the insertion hole 1dh. The air inlet 1ah may be formed on the side surface of the measuring chamber 1 (e.g., in the side wall of the measuring chamber 1), but the inventive concept is not limited thereto. The inlet damper DP1 may selectively open or close the air inlet 1ah. The air inlet 1ah may be connected to the air supply portion SP. The air supplied from the air supply portion SP may be moved to the measuring space 1h through the air inlet 1ah. A detailed description thereof will be further discussed below.

[0058] The air outlet 1ae may penetrate one side of the measuring chamber 1. The air outlet 1ae may connect the measuring space 1h to the external space. The air in the measuring space 1h of the measuring chamber 1 may be discharged to the external space (e.g., the exhaust section EP and / or the outside of the measuring chamber 1) through the air outlet 1ae. The air outlet 1ae may be spaced apart from the insertion hole 1dh and / or the air inlet 1ah. For example, the air outlet 1ae may be a hole that is separately arranged / distinguished from the insertion hole 1dh and / or the air inlet 1ah. The air outlet 1ae may be formed on the side surface of the measuring chamber 1 (e.g., in the side wall of the measuring chamber 1), but the inventive concept is not limited thereto. The outlet damper DP2 may selectively open or close the air outlet 1ae. The air outlet 1ae may be connected to the exhaust section EP. The air in the measuring space 1h may be moved to the exhaust section EP through the air outlet 1ae. A detailed description thereof will be further discussed below.

[0059] The measuring door DR can be combined with the measuring chamber 1 to selectively open or close the insertion hole 1dh. When the measuring door DR closes the insertion hole 1dh, the measuring space 1h can be sealed relative to the external space (for example, isolated from the external space). Therefore, when the measuring door DR closes the insertion hole 1dh, the fluid in the external space can be prevented from being introduced into the measuring space 1h through the insertion hole 1dh. In addition, when the measuring door DR closes the insertion hole 1dh, the fluid in the measuring space 1h can be prevented from being discharged into the external space through the insertion hole 1dh. The measuring door DR can be automatically opened and closed by a separate driving mechanism (not shown).

[0060] The measurement stage 5 may be located in the measurement chamber 1. The measurement stage 5 may support a substrate. The weight of a substrate introduced into the measurement space 1h may be measured in a state where the substrate is placed on the measurement stage 5. The measurement stage 5 may include pins 51 and a support plate 53.

[0061] The pins 51 may extend vertically (eg, longitudinally). The substrate may be disposed on the pins 51. For example, the pins 51 may support the substrate. Figure 4 Discuss pin 51 in detail.

[0062] The support plate 53 may support the pin 51. The support plate 53 may have a disk shape in a plan view, but the inventive concept is not limited thereto. The weight detecting sensor 7 may be located below the support plate 53.

[0063] The separation plate 8 may surround the measuring table 5. The separation plate 8 may provide a fluid moving hole 8h. The support plate 53 may be disposed in the fluid moving hole 8h. The separation plate 8 may be spaced outwardly from the support plate 53. Therefore, the fluid on the support plate 53 may move to the air outlet 1ae through the fluid moving hole 8h.

[0064] The weight detection sensor 7 can detect the weight of the substrate disposed on the measuring table 5. In some embodiments, the weight detection sensor 7 can be located below the measuring table 5. For example, the weight detection sensor 7 can support the measuring table 5. The weight detection sensor 7 can be connected to the controller C. The controller C can receive information about the weight of the substrate detected by the weight detection sensor 7. The weight detection sensor 7 may include various components for detecting weight. For example, the weight detection sensor 7 may include a load cell. However, the inventive concept is not limited thereto, and the weight detection sensor 7 may include different types of sensors.

[0065] The filter FT may be located below the air inlet 1ah. For example, the filter FT may be located between the air inlet 1ah and the measuring table 5. The air introduced into the measuring space 1h through the air inlet 1ah may be filtered by the filter FT and then may move onto the measuring table 5.

[0066] The inlet damper DP1 can selectively open or close the air inlet 1ah. The inlet damper DP1 can be directly combined with the measuring chamber 1. Alternatively, the inlet damper DP1 can be connected to an inlet duct (not shown) extending from the measuring chamber 1. For example, the inlet duct can be between the measuring chamber 1 and the inlet damper DP1.

[0067] The outlet damper DP2 can selectively open or close the air outlet 1ae. The outlet damper DP2 can be directly combined with the measurement chamber 1. Alternatively, the outlet damper DP2 can be connected to an outlet duct (not shown) extending from the measurement chamber 1. For example, the outlet duct can be between the measurement chamber 1 and the outlet damper DP2.

[0068] The first differential pressure sensor PS1 and the second differential pressure sensor PS2 can measure the pressure difference between the air inlet 1ah and the air outlet 1ae. The first differential pressure sensor PS1 can be arranged adjacent to the air inlet 1ah. Alternatively, as Figure 3 As shown, the first differential pressure sensor PS1 can be arranged in the air inlet 1ah. In addition, the second differential pressure sensor PS2 can be arranged adjacent to the air outlet 1ae. Alternatively, as Figure 3 As shown, the second differential pressure sensor PS2 may be disposed in the air outlet 1ae.

[0069] The first differential pressure sensor PS1 and the second differential pressure sensor PS2 may together constitute a differential pressure gauge. The differential pressure gauge may include various components capable of measuring pressure. For example, the first differential pressure sensor PS1 may include a manometer and / or a barometer or may be a manometer and / or a barometer. The second differential pressure sensor PS2 may include a Bourdon tube manometer or may be a Bourdon tube manometer. However, the inventive concept is not limited thereto, and the differential pressure gauge may include different types of manometers capable of measuring fluid pressure.

[0070] Figure 4 A plan view illustrating a substrate weight measuring device according to some embodiments of the inventive concept is shown.

[0071] Reference Figure 4 , the position of the pin 51 can be determined in consideration of the size of the substrate. The pin 51 can be arranged to support the substrate. For example, the pin 51 can be spaced apart from the center of the support plate 53 and can be arranged at a first distance x from the center of the support plate 53. The first distance x can be, for example, equal to or greater than about 100 mm. The pin 51 can be spaced apart from the perimeter of the support plate 53 and can be arranged at a second distance y from the perimeter of the support plate 53. The support plate 53 can have a diameter that is the same as or similar to the diameter of the substrate. For example, the support plate 53 can have a diameter of about 300 mm. The second distance y can be, for example, equal to or less than about 50 mm. However, the inventive concept is not limited thereto, and the position of the pin 51 can be changed based on the detailed design.

[0072] Terms such as "about" or "approximately" may reflect an amount, size, orientation, or arrangement that varies only in a small relative manner, and / or in a manner that does not significantly alter the operation, function, or structure of certain elements. For example, a range of "about 0.1 to about 1" may encompass ranges such as 0%-5% deviations around 0.1 and 0% to 5% deviations around 1, especially if such deviations maintain the same effect as the listed range.

[0073] A plurality of pins 51 may be provided in the measuring table 5. For example, Figure 4 As shown, four pins 51 may be provided in the measuring table 5. A plurality of pins 51 may be provided to be spaced apart from each other in the horizontal direction. However, unless otherwise specifically stated, for ease of description, a single pin 51 will be discussed below. A single pin 51 may represent each pin 51.

[0074] Figure 5 A cross-sectional view illustrating a drying device according to some embodiments of the present inventive concept is shown.

[0075] Reference Figure 5, the drying device A can dry the substrate. For example, the drying device A can be configured to remove liquid on the substrate. The drying device A can include a drying chamber 9, a drying heater HT, a drying chuck 4, a baffle 2, a chamber drive mechanism MA, and an exhaust tank ET.

[0076] The drying chamber 9 may provide a drying space 9h. The drying chamber 9 may include a lower shell 91 and an upper shell 93. The lower shell 91 may be spaced downward from the upper shell 93. The drying space 9h may be disposed between the lower shell 91 and the upper shell 93. The lower shell 91 may be vertically movable. For example, the chamber drive mechanism MA may drive the lower shell 91 to move upward to combine the lower shell 91 with the upper shell 93. The lower shell 91 and the upper shell 93 may be combined to separate the drying space 9h from the external environment.

[0077] An upper inlet UI may be provided in the upper shell 93. The upper inlet UI may be connected to the dry fluid supply portion 3. The dry fluid may be supplied to the dry space 9h from the dry fluid supply portion 3 through the upper inlet UI. A lower inlet LI and a lower exhaust port LE may be provided in the lower shell 91. The lower inlet LI may be connected to the dry fluid supply portion 3. The dry fluid may be supplied to the dry space 9h from the dry fluid supply portion 3 through the lower inlet LI. The lower exhaust port LE may be connected to the exhaust tank ET. The dry fluid may be discharged to the outside through the lower exhaust port LE.

[0078] The drying heater HT may be coupled to the drying chamber 9. The drying heater HT may heat the drying space 9h. For example, the drying heater HT may heat the drying fluid in the drying space 9h. The heating of the drying fluid by the drying heater HT may allow the drying fluid introduced into the drying space 9h to maintain its supercritical state.

[0079] The drying chuck 4 may be connected to the upper housing 93. The drying chuck 4 may be spaced downward from the upper housing 93. For example, the drying chuck 4 may be positioned below the upper housing 93 by connecting the drying chuck 4 to a connector of the upper housing 93. The substrate may be disposed on the drying chuck 4. For example, the drying chuck 4 may support the substrate.

[0080] The baffle 2 may be connected to the lower housing 91, for example, by connecting the baffle 2 to a support portion of the lower housing 91. The baffle 2 may be spaced apart from the lower inlet LI and the lower discharge port LE by a specific / predetermined interval upward. The baffle 2 may block the flow of the fluid. For example, the baffle 2 may prevent the drying fluid introduced into the lower inlet L1 from being directly (e.g., in a straight manner) sprayed onto the substrate on the drying chuck 4. For example, the baffle 2 may allow the drying fluid introduced through the lower inlet L1 to have a tortuous path to contact the substrate disposed on the drying chuck 4 and / or to be first dispersed in the drying space 9h and then contact the substrate disposed on the drying chuck 4.

[0081] The chamber driving mechanism MA may be connected to the lower housing 91. The chamber driving mechanism MA may drive the lower housing 91 to move vertically. The chamber driving mechanism MA may combine the lower housing 91 with the upper housing 93, or may separate the lower housing 91 from the upper housing 93. The chamber driving mechanism MA may include an actuator such as a motor.

[0082] The drain tank ET may be connected to the lower drain port LE. The drain tank ET may receive the fluid exhausted from the drying chamber 9 through the lower drain port LE.

[0083] Figure 6 A simplified schematic diagram illustrating a dry fluid supply according to some embodiments of the present inventive concept is shown.

[0084] Reference Figure 6 The drying fluid supply part 3 may include a drying fluid source 31 , a drying fluid pipeline 37 , a supply filter 32 , a first valve 381 , a condenser 33 , a pump 34 , a second valve 382 , a tank 35 , a heater 36 and a third valve 383 .

[0085] The dry fluid source 31 may supply the dry fluid to, for example, the dry fluid pipeline 37. For example, the dry fluid source 31 may store and supply a gaseous fluid, and the gaseous fluid may become a supercritical fluid in a subsequent step. 2 When the supercritical fluid is used, the dry fluid source 31 can store gaseous CO 2 The gaseous CO supplied from the dry fluid source 31 2 The temperature may be about 10° C. to about 30° C. In addition, the gaseous CO supplied from the dry fluid source 31 2 The pressure may be about 4 MPa to about 6 MPa. The drying fluid supplied from the drying fluid source 31 may move along the drying fluid line 37 .

[0086] The drying fluid line 37 may provide a path along which the drying fluid supplied from the drying fluid source 31 is introduced into the drying chamber 9. The supply filter 32 may be located on the drying fluid line 37. The supply filter 32 may filter out foreign matter present in the drying fluid. The first valve 381 may open or close a flow path between the supply filter 32 and the condenser 33, thereby controlling the movement of the drying fluid.

[0087] The condenser 33 can cool the gaseous CO supplied from the dry fluid source 31. 2 Therefore, gaseous CO 2 It can be liquefied in the condenser 33. For example, CO liquefied in the condenser 33 2 The temperature may be about 0° C. to about 6° C. In addition, the CO liquefied in the condenser 33 2The pressure may be from about 4 MPa to about 6 MPa.

[0088] The pump 34 may increase the pressure of the drying fluid that is liquefied while passing through the condenser 33. For example, the pump 34 may increase the pressure of the drying fluid that is liquefied in the condenser 33. 2 Provide a pressure in the range of about 15 MPa to about 25 MPa. 2 When passing through the pump 34, the CO liquefied in the condenser 33 2 The temperature of may become about 15° C. to about 25° C. The second valve 382 may open or close a path between the pump 34 and the tank 35 , thereby controlling the movement of the drying fluid. The tank 35 may store the drying fluid compressed by the pump 34 .

[0089] The heater 36 may heat the drying fluid moving along the drying fluid line 37. For example, the heater 36 may heat the liquid CO compressed by the pump 34. 2 Therefore, liquid CO 2 The CO that is heated by the heater 36 and becomes supercritical 2 It can be in a high temperature and high pressure state. For example, CO becomes supercritical when passing through the heater 36. 2 The temperature may be about 60° C. to about 90° C. In addition, CO becomes supercritical when passing through the heater 36. 2 The third valve 383 may control the CO that becomes supercritical when passing through the heater 36. 2 The movement of supercritical CO 2 The liquid may be introduced into the drying chamber 9 after passing through the third valve 383 .

[0090] Figure 7 A flow chart illustrating a substrate processing method according to some embodiments of the inventive concept is shown.

[0091] Reference Figure 7 , a substrate processing method SS can be provided. The substrate processing method SS can be by using reference Figures 1 to 6 The substrate processing system SPS discussed herein processes a substrate. The substrate processing method SS may include performing a photolithography process on a substrate (S1), transferring the substrate to a substrate drying system (S2), and performing a cleaning process on the substrate (S3).

[0092] The photolithography step S1 may include coating a photoresist on a substrate ( S11 ), exposing the substrate ( S12 ), and heating the substrate ( S13 ).

[0093] The cleaning step S3 may include removing moisture on the substrate ( S31 ), performing a wetting process on the substrate ( S32 ), and performing a drying process on the substrate ( S33 ).

[0094] The moisture removal step S31 may include measuring the weight of the substrate ( S311 ) and heating the substrate ( S312 ).

[0095] The following will refer to Figures 8 to 16 The substrate processing method SS is discussed in detail.

[0096] Figures 8 to 16 Shows the Figure 7 FIG. 1 is a flow chart of a substrate processing method.

[0097] Reference Figure 7 The photoresist coating step S11 may include coating photoresist on one surface of the substrate. For example, the photoresist may be coated on one surface of the substrate by a spin coating process.

[0098] Reference Figure 7 and Figure 8 The substrate exposure step S12 may include irradiating light onto the substrate W on which the photoresist is coated. For example, in the exposure device EC, an EUV radiation may be performed on the substrate W using a photomask. For example, the photoresist coated on the substrate W may be exposed to patterned EUV radiation formed by the EUV radiation-blocked portion of the photomask.

[0099] Still refer to Figure 7 and Figure 8 , the substrate heating step S13 may include allowing the first heating device BCA to heat the substrate W. For example, the substrate W that has passed through the exposure device EC may be heated in the first heating device BCA. The first heating device BCA may perform a baking process on the substrate W that has passed through the exposure device EC. For example, the photoresist coated on the substrate W may form a photoresist layer on the substrate W, and a baking process may be performed by heating the substrate W and the photoresist layer to bake the photoresist layer.

[0100] Refer again Figure 7 and Figure 8, the substrate transfer step S2 may include providing a substrate W including a photoresist layer formed in a photolithography process to a substrate drying system DS. For example, the first transfer unit TU1 may transfer the substrate W taken out from the photolithography processing system PS to the substrate drying system DS. Before the substrate W arrives at the substrate drying system DS, the substrate W may be maintained (e.g., may stay) for a certain time at a position outside the substrate drying system DS and outside the photolithography processing system PS. During this process, the substrate W may be exposed to the atmosphere (e.g., air or gas present outside the room). Moisture may be absorbed into the substrate W exposed to the atmosphere and / or adsorbed / attached to the substrate W exposed to the atmosphere. For example, moisture may be present on the substrate W / adsorbed on the substrate W.

[0101] Reference Figure 7 , Fig. 9 , Fig.10 and Fig.11 , the weight measurement S311 may include placing the substrate in a measurement chamber and measuring the weight of the substrate.

[0102] The step of placing the substrate in the measurement chamber may include allowing the second transport unit TU2 to insert the substrate W into the measurement chamber 1. For example, the second transport unit TU2 may transport the substrate W into the measurement chamber 1. For example, the substrate W may be introduced into the measurement space 1h through the insertion hole 1dh. At this stage, moisture FLW may be located / adsorbed on the substrate W.

[0103] The step of measuring the weight of the substrate may include supplying air AG to the measurement space 1h. For example, before the substrate W is placed on the measurement table 5, air AG may be supplied from the air supply portion SP to the measurement space 1h through the air inlet 1ah. The inlet damper DP1 may be opened to supply air AG to the measurement space 1h. The air AG supplied to the measurement space 1h may have a temperature of about 20°C to about 27°C. However, the inventive concept is not limited thereto, and based on a detailed design, the air AG may be set to have different temperatures.

[0104] The step of measuring the weight of the substrate may further include exhausting air AG from the measurement space 1h. For example, air AG may be exhausted from the measurement space 1h to the exhaust part EP through the air outlet 1ae before the substrate W is placed on the measurement stage 5. The outlet damper DP2 may be opened to exhaust the air AG.

[0105] When measuring the weight of the substrate, the measurement space 1h may maintain the pressure within a specific / predetermined range. The differential pressure gauge may measure the pressure. When the pressure of the measurement space 1h measured by the differential pressure gauge is greater than the specific / predetermined range, the exhaust portion EP may exhaust the air AG from the measurement space 1h. Alternatively, when the pressure of the measurement space 1h measured by the differential pressure gauge is less than the specific / predetermined range, the air supply portion SP may supply the air AG to the measurement space 1h.

[0106] In this way, the pressure of the measurement space 1h can be maintained within a specific / predetermined range. At this stage, the pressure of the measurement space 1h can be kept no higher than the pressure of the external space. Therefore, leakage of the fluid from the measurement space 1h to the external space can be prevented.

[0107] The step of measuring the weight of the substrate may further include closing the measurement door DR to seal / isolate the measurement space 1h from the external space. For example, the measurement door DR may close the insertion hole 1dh to seal / isolate the measurement space 1h.

[0108] The step of measuring the weight of the substrate may further include allowing the weight detection sensor to detect the weight of the substrate. The step of allowing the weight detection sensor to detect the weight of the substrate may include allowing the weight detection sensor 7 to detect the weight of the substrate W set on the measurement table 5. For example, when the substrate W is placed on the measurement table 5, the weight detection sensor 7 may detect the weight of the substrate W. The weight detection sensor 7 may detect the weight of the substrate W and the weight of the water FLW. For example, in some steps, the weight of the substrate W may be measured before the water FLW is adsorbed on the substrate W, and in some other steps, the weight of the substrate W may be measured after the water FLW is adsorbed on the substrate W, in which case the weight of the substrate W may include the weight of the water FLW. The controller C may receive information about the weight detected by the weight detection sensor 7.

[0109] The step of measuring the weight of the substrate may be performed twice. For example, the step of measuring the weight of the substrate may include performing a first measurement to measure the weight of the substrate.

[0110] The first measurement may be performed in the substrate weight measuring device M. After the first measurement, the substrate W may be transferred to the outside of the substrate weight measuring device M. Afterwards, the second measurement may be performed. The second measurement may be performed in the substrate weight measuring device M. For example, the first measurement and the second measurement may be performed at the same position. However, the inventive concept is not limited thereto, and the first measurement and the second measurement may be performed at different positions. For example, the first measurement may be performed outside the substrate drying system DS. The second measurement may be performed in the substrate weight measuring device M of the substrate drying system DS.

[0111] The first measurement and the second measurement may be performed at a certain time interval. For example, the second measurement may be performed at a predetermined time after the first measurement is performed. Between the first measurement and the second measurement, the substrate W may be kept at a specific / predetermined position for a specific / predetermined time. Alternatively, between the first measurement and the second measurement, the substrate W may be transferred from one place to another. For example, the first measurement may be performed immediately after the substrate exposure step S12. For example, the first measurement and the second measurement of weight may be performed for a plurality of substrates W, and the time interval between the first measurement and the second measurement of the substrate W may be different from the time interval between the corresponding first measurement and the second measurement of the weight of other substrates W. In some embodiments, the time interval between the first measurement and the second measurement of the substrate W may be the same or substantially the same as the time interval between the corresponding first measurement and the second measurement of the weight of other substrates W.

[0112] After the first measurement, the substrate W may be transferred to the substrate drying system DS. When the substrate W is transferred to the substrate drying system DS after the first measurement, the substrate W may be exposed to the atmosphere (e.g., outside the chamber). For example, before the second measurement and after the first measurement, the substrate W may be exposed to the atmosphere. Therefore, moisture in the atmosphere may be absorbed into the substrate W and / or adsorbed onto the substrate W. Therefore, the first measurement and the second measurement may produce different results / weights from each other. The result / weight of the second measurement may be greater than the result / weight of the first measurement. The difference in the result / weight between the first measurement and the second measurement may be the amount of moisture absorbed into the substrate W and / or adsorbed onto the substrate W.

[0113] Reference Figure 7 , the moisture removal step S31 may further include determining a heating condition of the substrate. For example, the weight of the substrate may be used to determine the heating condition of the substrate. The difference in the result / weight between the first measurement and the second measurement may be used to calculate the amount of moisture on the substrate. The calculated amount of moisture may be used to determine the heating condition of the substrate. The heating condition may be a heating time and / or a heating temperature, but the inventive concept is not limited thereto.

[0114] In some embodiments, information about the relationship between the heating conditions of the substrate and the time the substrate is exposed to the atmosphere (e.g., the period of time the substrate remains outside the chamber) can be collected. For example, data about the amount of moisture on the substrate can be collected based on the time the substrate is exposed to the atmosphere. By using data about the amount of moisture on the substrate based on / related to the time the substrate is exposed to the atmosphere, the heating conditions of the substrate can be easily determined.

[0115] For example, the first condition may be defined as referring to the heating condition of the substrate when the substrate is exposed to the atmosphere during a first time. The second condition may be defined as referring to the heating condition of the substrate when the substrate is exposed to the atmosphere during a second time. After repeatedly collecting data, the heating condition of the substrate may be determined without measuring the weight of the substrate. Thus, a fast process may be accomplished.

[0116] Reference Figure 7 and Fig.12 , the heating step S312 may include inserting the substrate W into the second heating device BC. The substrate W may be heated in the second heating device BC. For example, the substrate W may be heated in the second heating device BC under a heating condition. The second heating device BC may heat the substrate W in various ways. For example, the second heating device BC may heat the substrate W by providing heat to a hot wire disposed under the substrate W. For another example, the second heating device BC may heat the substrate W by radiating light to the substrate W. Therefore, moisture on the substrate W may be eliminated.

[0117] Reference Figure 7 and Fig.13 , the substrate wetting step S32 may include placing the substrate W in the wetting chamber WC. For example, the substrate W may be disposed on the wetting table WT. In a state where the substrate W is disposed on the wetting table WT, the fluid FL supplied from the fluid supply part FS may be sprayed onto the substrate W through the wetting nozzle WN. The wetting table WT may rotate the substrate W. When the substrate W is rotated while spraying the fluid FL, the fluid FL may be uniformly coated on the top surface of the substrate W. The fluid FL coated on the substrate W may include n-butyl acetate (nBA) or may be n-butyl acetate (nBA), but the inventive concept is not limited thereto.

[0118] Reference Figure 7 , Fig.14 , Fig.15 and Fig.16 , the substrate drying step S33 may include allowing the drying chamber 9 to receive therein the substrate W that has passed through the wetting device B. For example, after performing the wetting step S32, the substrate W may be transferred from the wetting device B to the drying chamber 9. The substrate W may be disposed on the drying chuck 4. The substrate drying step S33 may further include sealing the drying chamber 9. In a state where the substrate W is disposed on the drying chuck 4, the lower housing 91 and the upper housing 93 may be combined with each other to seal the drying space 9h. The substrate drying step S33 may further include supplying a supercritical fluid SCF to the drying chamber 9. The supercritical fluid SCF supplied from the drying fluid supply part 3 to the drying space 9h may remove the fluid coated on the top surface of the substrate W. Therefore, the substrate W may be dried and / or cleaned.

[0119] Although different figures illustrate variations of example embodiments and different embodiments disclose features that differ from one another, these figures and embodiments are not necessarily intended to exclude one another. Rather, when the related descriptions of the figures and embodiments are considered as a whole, features depicted in different figures and / or described above in different embodiments may be combined with other features from other figures / embodiments to result in additional variations of the embodiments. For example, components and / or features of the different embodiments described above may be interchangeably or additionally combined with components and / or features of other embodiments to form additional embodiments, unless the context clearly indicates otherwise, and the present disclosure includes additional embodiments.

[0120] According to the substrate processing system of some embodiments of the present invention and the substrate processing method using the substrate processing system, before performing a wetting process and / or a drying process on the substrate, the moisture on the substrate can be removed in advance. Therefore, in the drying process using a supercritical fluid, moisture can be prevented from remaining on the substrate. Moisture may be difficult to dissolve in a supercritical fluid. Therefore, when moisture remains on the substrate, even after the drying process using a supercritical fluid, moisture and foreign matter in the moisture may remain on the substrate. When the moisture on the substrate is removed in advance, foreign matter on the substrate can be prevented from remaining on the substrate together with the moisture on the substrate. Therefore, the substrate can be free from contamination.

[0121] According to the substrate processing system of some embodiments of the present invention and the substrate processing method using the substrate processing system, the weight of the substrate can be measured to calculate the amount of moisture on the substrate. Therefore, the substrate can be accurately heated. For example, the heating conditions of the substrate can be determined to completely remove the moisture on the substrate without damaging the substrate. Therefore, the moisture on the substrate can be removed while reducing / preventing damage to the substrate.

[0122] According to the substrate processing system and the substrate processing method of the present inventive concept, moisture on the substrate can be removed to prevent contamination.

[0123] According to the substrate processing system and substrate processing method of the present inventive concept, moisture on the substrate can be removed while reducing damage to the substrate.

[0124] The substrate processing system and substrate processing method according to the present invention can improve the yield rate of the semiconductor device manufacturing process.

[0125] The effects / benefits of the present inventive concept are not limited to the above, and those skilled in the art will clearly understand other effects / benefits not mentioned above from the following description.

[0126] Although the present invention has been described in conjunction with some embodiments of the present invention shown in the accompanying drawings, it should be understood by those skilled in the art that various changes and modifications may be made without departing from the technical spirit and basic features of the present invention. Therefore, it should be understood that the above embodiments are merely illustrative and not restrictive in all aspects.

Claims

1. A substrate processing method, comprising: performing an exposure process on the substrate; After the exposure process, removing moisture from the substrate; performing a wetting process on the substrate from which moisture has been removed; as well as After the wetting process, a drying process is performed on the substrate, Wherein, removing moisture from the substrate comprises: measuring the weight of the substrate; and heating the substrate whose weight is measured, and Wherein, performing the drying process on the substrate comprises: placing the substrate into a drying chamber; and A supercritical fluid is supplied to the drying chamber to dry the fluid on the substrate.

2. The substrate processing method according to claim 1, wherein: Removing moisture from the substrate further includes calculating the amount of moisture based on the measured weight of the substrate to determine a heating condition for the substrate.

3. The substrate processing method according to claim 2, wherein: Measuring the weight of the substrate comprises: performing a first measurement using a substrate weight measuring device to measure the weight of the substrate; After the first measurement, transferring the substrate to the outside of the substrate weight measuring device; and After the substrate is transferred to the outside of the substrate weight measuring device, a second measurement is performed to measure the weight of the substrate.

4. The substrate processing method according to claim 3, wherein: Determining the heating condition of the substrate comprises: calculating the amount of moisture on the substrate using a weight difference between the first measurement and the second measurement; and Based on the calculated moisture amount, a heating time or a heating temperature of the substrate is determined.

5. The substrate processing method according to claim 3, wherein: The exposure process is performed on the substrate by an exposure device, and Performing the second measurement to measure the weight of the substrate, performing the wetting process on the substrate, and performing the drying process on the substrate are all achieved by a substrate drying system spaced apart from the exposure device.

6. The substrate processing method according to claim 5, wherein: The substrate drying system comprises the substrate weight measuring device, Wherein, performing the first measurement is achieved by the substrate drying system.

7. The substrate processing method according to claim 5, wherein: The substrate weight measuring device is spaced apart from the substrate drying system.

8. The substrate processing method according to claim 1, wherein: Performing the wetting process on the substrate includes coating n-butyl acetate (nBA) on the substrate.

9. A substrate processing method, comprising: performing a photolithography process on the substrate; After the photolithography process, transferring the substrate to a substrate drying system; as well as performing a cleaning process on the substrate using the substrate drying system, Wherein, performing the cleaning process includes: removing moisture from the substrate after the substrate is transferred to the substrate drying system; After removing the moisture, performing a wetting process on the substrate; and After the wetting process is completed, a drying process is performed on the substrate, wherein removing moisture on the substrate includes heating the substrate, and The performing of the drying process on the substrate includes: supplying a supercritical fluid to the substrate to dry the fluid on the substrate.

10. The substrate processing method according to claim 9, wherein: Performing the photolithography process on the substrate includes: coating a photoresist on the substrate; and After the photoresist is coated on the substrate, an exposure process is performed on the substrate using an exposure device.

11. The substrate processing method according to claim 10, wherein: Performing the photolithography process on the substrate includes heating the substrate after completing the exposure process.

12. The substrate processing method according to claim 9, wherein: Removing moisture from the substrate includes: measuring the weight of the substrate; and Based on the measured weight of the substrate, a heating condition of the substrate is determined.

13. The substrate processing method according to claim 12, wherein: Measuring the weight of the substrate comprises: performing a first measurement to measure the weight of the substrate; and performing a second measurement to measure the weight of the substrate, Wherein, determining the heating condition of the substrate comprises: calculating the amount of moisture adsorbed on the substrate using a weight difference between the first measurement and the second measurement; and Based on the calculated amount of moisture adsorbed on the substrate, a heating time or a heating temperature of the substrate is determined.

14. The substrate processing method according to claim 13, wherein: The second measurement is performed at a location different from the location where the first measurement was performed.

15. The substrate processing method according to claim 9, wherein: Performing the wetting process on the substrate includes coating n-butyl acetate (nBA) on the substrate.

16. A substrate processing system, comprising a substrate drying system, in, The substrate drying system comprises: a first substrate weight measuring device configured to measure the weight of the substrate; a heating device configured to heat the substrate taken out from the first substrate weight measuring device; a wetting device configured to spray a fluid onto the substrate taken out from the heating device; and a drying device configured to dry the substrate taken out from the wetting device, wherein the first substrate weight measuring device comprises: Measurement room, providing measurement space; a measurement station in the measurement chamber; and a weight detection sensor configured to detect the weight of the substrate disposed on the measurement table, and Wherein, the drying device comprises: Drying room; and The drying fluid supply unit is configured to supply supercritical fluid to the drying chamber.

17. The substrate processing system of claim 16, further comprising a photolithography processing system spaced apart from the substrate drying system.

18. The substrate processing system according to claim 17, wherein: The photolithography processing system comprises: an exposure device configured to perform an exposure process on the substrate; and The second substrate weight measuring device is configured to measure the weight of the substrate taken out from the exposure device.

19. The substrate processing system according to claim 16, wherein: The wetting device comprises: Wetting chamber; and The fluid supply unit is configured to supply fluid to the wetting chamber.

20. The substrate processing system according to claim 16, wherein: The drying device also includes a drying chuck in the drying chamber.

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