Heat dissipation system and heat dissipation method for high-heat-flux component

Abstract

The invention discloses a heat dissipation system and method for a high-heat-flux component. The heat dissipation system comprises a semiconductor chilling plate, a graphene heat sink, a radiator and a temperature control chip, and the semiconductor chilling plate comprises a cold end and a hot end; the graphene heat sink is in a quadrangular frustum pyramid shape with four trapezoidal side faces, square throttling channels used for enhancing passive heat exchange are arranged on the side faces of the graphene heat sink, the top face of the graphene heat sink is connected with the high-heat-flux electronic component, and the bottom face of the graphene heat sink is connected with the cold end of the semiconductor chilling plate. The temperature control chip surrounds the side face of the semiconductor chilling plate by a circle. And the area of the top surface of the graphene heat sink is the same as that of a heat source of the high-heat-flux electronic component. The quadrangular frustum pyramid type graphene heat sink is applied to an electronic component heat dissipation system with high integration level and high calorific value for the first time, and due to the fact that the heat sink is light and thin, the use amount of materials is reduced on the premise that the structural strength is guaranteed through the quadrangular frustum pyramid type design. In addition, the quadrangular frustum pyramid structure also improves the overall strength and stability of the material, and reduces deformation caused by thermal expansion.

Description

Technical Field

[0001] The invention relates to the field of heat dissipation systems, and in particular to a heat dissipation system and a heat dissipation method for components with high heat flux density. Background Art

[0002] With the continuous improvement of the integration and power density of electronic components, especially the application of lasers, radars and other equipment, the heat dissipation demand of these high heat flux density components is increasing. The long-term operation of miniaturized and highly integrated electronic components will cause the temperature to rise, and the heat concentration makes thermal management more complicated. Traditional heat dissipation methods are difficult to meet the heat dissipation needs of high heat flux density electronic devices. Therefore, it is urgent to find efficient cooling technology to ensure that components operate within a strict temperature range to improve energy efficiency and reliability.

[0003] There are three main existing solutions to the heat dissipation problem of high heat flux density electronic components.

[0004] The first method is mainly based on passive heat dissipation (such as heat sinks and heat pipes) and active heat dissipation (such as fans and liquid cooling systems), which effectively reduces the temperature by increasing the heat dissipation area and enhancing heat conduction. However, due to the space limitations of electronic components, this method still has problems such as insufficient heat dissipation efficiency, insufficient heat dissipation area due to space limitations, and difficulty in integrating the heat dissipation system with the device.

[0005] The second method: using semiconductor cooling sheets directly connected to high heat flux density electronic components. Due to the direct connection, uneven heat dissipation will occur. At the same time, the backplane temperature is too low, condensation will occur, which can easily cause damage to the internal circuit.

[0006] The third type: In order to cope with the high heat flux density, a larger radiator and cooling system are used, but this increases the overall volume and weight, which is not conducive to portable devices and lightweight design.

[0007] In view of the above-mentioned defects of the existing heat dissipation technology, the present invention proposes a high heat flux density component heat dissipation system and heat dissipation method for high heat flux density components. Summary of the invention

[0008] Based on the above description, the present invention provides a high heat flux density component heat dissipation system and heat dissipation method to solve the problems that the existing high heat flux density electronic component heat dissipation method is insufficient due to space limitations, and the integration of the heat dissipation system and the device is difficult; or because the semiconductor refrigeration plate is directly connected to the high heat flux density electronic component, the heat dissipation is uneven, and the back plate temperature is too low, condensation will occur; or the volume and weight are greatly increased, which is not conducive to portable devices and lightweight design.

[0009] The technical solution of the present invention to solve the above technical problems is as follows: A high heat flux density component heat dissipation system, the heat dissipation system comprises a semiconductor cooling plate, a graphene heat sink, a radiator, and a temperature control chip, wherein the semiconductor cooling plate comprises a cold end and a hot end; The graphene heat sink is a four-sided pyramid with four trapezoidal sides and rectangular top and bottom surfaces. The top surface with a smaller area is connected to the electronic components with high heat flux density, and the bottom surface with a larger area is connected to the cold end of the semiconductor refrigeration plate. The side surface is provided with a square throttling channel for enhancing passive heat exchange. The temperature control chip surrounds the side of the semiconductor refrigeration sheet, and the temperature sensing probe of the temperature control chip is connected to the bottom surface of the graphene heat sink; The top surface area of ​​the tetrahedral graphene heat sink is the same as the heat source area of ​​the electronic components with high heat flux density; This cooling system is targeted at components with high heat flux density.

[0010] Based on the above technical solution, the present invention can also be improved as follows.

[0011] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the heat sink includes a fin assembly and a fan, a receiving cavity is opened in the middle of the fin assembly, and the fan is connected to the receiving cavity.

[0012] Furthermore, in the above-mentioned high heat flux density component cooling system, the fin assembly includes connecting fins and multiple single fins, the hot end is connected to the connecting fins of the fin assembly, multiple single fins are connected in parallel and at intervals on the side of the connecting fin away from the hot end, a accommodating cavity is formed in the middle of the multiple single fins, a fan is connected in the accommodating cavity, a fin channel is formed between adjacent single fins arranged at intervals, and the fan is used to dissipate heat from the fin channel.

[0013] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the hot end of the semiconductor cooling plate is connected to the fin assembly, and the fin assembly is then cooled by the fan of the radiator.

[0014] Furthermore, in the above-mentioned high heat flux density component cooling system, the temperature control chip includes a temperature sensing probe, the temperature sensing probe is connected to the bottom surface of the tetrahedral graphene heat sink, and the output end of the temperature control chip is connected to the semiconductor cooling plate. By detecting and feeding back the temperature of the tetrahedral graphene heat sink, the working current of the semiconductor cooling plate is adjusted, thereby achieving the effect of intelligent temperature control.

[0015] Furthermore, in the above-mentioned high heat flux density component cooling system, the bottom surface area of ​​the quadrangular pyramid graphene heat sink is: 42×42mm, the top surface area is 10×10mm; the height is 5mm, the throttling channel is a square hole, and the side length of the square hole is 1mm.

[0016] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the size of the semiconductor cooling plate is 40×40×3.8 mm.

[0017] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, a throttling channel is opened in a circle near the top surface and a circle near the bottom surface of the graphene heat sink, and the throttling channel on the top surface is connected to the throttling channel on the bottom surface through a connecting channel opened inside the graphene heat sink.

[0018] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the connecting channel can be linear, or can be bent in an S-shape, Z-shape, spiral shape, etc.

[0019] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the number of throttling heat dissipation holes on the top surface is the same as the number of throttling heat dissipation holes on the bottom surface, and they are connected one by one through the same number of connecting channels.

[0020] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the semiconductor cooling plate is a TEC semiconductor cooling plate.

[0021] The present invention also provides a method for dissipating heat from components with high heat flux density. When the above-mentioned heat dissipation system is used and the semiconductor refrigeration plate is not used for active heat dissipation, the throttling channel on the side of the graphene heat sink can be used to increase the air convection heat exchange effect. The air temperature near the heat source rises, resulting in a decrease in density, thereby enhancing the flow of air near the heat source, generating a phenomenon of heat convection, and improving the passive heat dissipation capacity. When active temperature control is adopted, the temperature sensing probe monitors the temperature, and the control unit of the temperature control chip compares the current temperature with the set temperature. If the current temperature is higher than the set temperature, the control unit controls the semiconductor refrigeration plate to increase the working current and absorb heat, thereby controlling the temperature of the electronic components with high heat flux density. If the current temperature is lower than the set temperature, the control unit controls the semiconductor refrigeration plate to reduce the working current and reduce energy consumption, thereby controlling the temperature of the electronic components with high heat flux density. At the same time, when the temperature of the component is low, the throttling channel can be used to increase the heat dissipation area and enhance the heat convection heat exchange effect.

[0022] Compared with the prior art, the technical solution of the present invention has the following beneficial technical effects: For high heat flux density components, the present invention proposes a high heat flux density component heat dissipation system and heat dissipation method. The system introduces an active temperature control mechanism and excellent heat conduction materials, and can achieve efficient conduction of the temperature of high heat flux density electronic components through a tetrahedral graphene heat sink with high thermal conductivity. This tetrahedral graphene heat sink, with its excellent thermal conductivity, far exceeds the existing mainstream heat dissipation materials. Its thermal conductivity can reach 2000-5000 W / (m·K), which is significantly better than copper (about 400 W / (m·K)) and aluminum (about 200 W / (m·K)). At the same time, the design of the tetrahedral graphene heat sink improves the overall strength and stability of the material; reduces the amount of material used, thereby reducing the overall weight; and can increase the contact area with the heat source, improve the heat dissipation efficiency, prevent condensation water from appearing at the cold end of the TEC semiconductor refrigeration plate due to too low temperature, and avoid possible equipment damage caused by this. The side of the graphene heat sink is also equipped with a square throttling channel, which uses heat convection and air throttling to increase the air flow rate, which can enhance passive heat dissipation. When the semiconductor refrigeration plate is not working, it can also achieve a certain heat dissipation effect; when the semiconductor refrigeration plate is working, PID control technology is used to achieve intelligent temperature control using the chip. This heat dissipation solution not only improves the overall heat dissipation efficiency and effectively reduces the operating temperature of electronic components, but also increases its active temperature control capability, achieving precise temperature control and reducing energy consumption under different working conditions of electronic components.

[0023] The tetrahedral graphene heat sink used in the present invention is first applied to the heat dissipation system of high-integration and high-heat electronic components. Due to its light and thin characteristics, this material can reduce the amount of material used while ensuring the structural strength through the tetrahedral design with trapezoidal sides, thereby reducing the overall weight, effectively reducing the weight of the equipment, and improving the portability and flexibility of the equipment. In addition, the chemical stability and mechanical strength of graphene also make it an ideal heat dissipation material. The design of the tetrahedral structure also improves the overall strength and stability of the material from a structural perspective, reduces the deformation of the components caused by thermal expansion, and ensures the long-term performance stability of the heat sink. This design can increase the contact area with the heat source, and at the same time cooperate with the side throttling channel structure to further increase the system convection heat exchange, and use the phenomenon of heat convection caused by the increase in air temperature near the heat source to reduce density, thereby improving the heat dissipation efficiency. It fills the gap in the existing high-heat flux density electronic component heat dissipation technology in terms of efficient heat dissipation materials.

[0024] At the same time, PID control technology and TEC semiconductor refrigeration active temperature control cooling technology are used to continuously adjust the working state of the TEC semiconductor refrigeration piece by detecting the temperature of the graphene heat sink. Intelligent temperature control of heat flux density components is achieved to meet the heat dissipation requirements under different working conditions. The present invention can effectively enhance the heat transfer capacity, thereby improving the overall heat dissipation effect. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 The figure is a schematic diagram of the overall structure of a heat dissipation system for high heat flux density components of the present invention.

[0025] Figure 2 It is a schematic diagram of the connection structure of the temperature control chip, the semiconductor refrigeration sheet and the graphene heat sink of the present invention.

[0026] Figure 3 This is a schematic structural diagram from another perspective of the semiconductor refrigeration plate and the tetrahedral graphene heat sink when the temperature control chip is removed in the present invention.

[0027] Figure 4 It is a schematic diagram of the structure of the semiconductor refrigeration sheet and the temperature control chip of the present invention.

[0028] Figure 5 It is a schematic structural diagram of the tetrahedral graphene heat sink of the present invention.

[0029] Figure 6 It is a schematic diagram of the radiator of the present invention.

[0030] Figure 7 This is a flow chart of the intelligent temperature control of the present invention.

[0031] In the figure: 1-graphene heat sink, 1A-bottom surface, 1B-top surface, 1C-throttling channel, 2-semiconductor cooling plate, 2A-cold end, 2B-hot end, 3-fin assembly, 3A-single fin, 3B-connecting fins, 4-fan, 5-temperature control chip, 5A-temperature sensing probe. DETAILED DESCRIPTION

[0032] In order to facilitate understanding of the present application, the present application will be described more comprehensively below. The present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0034] In order to more clearly explain the purpose of the present invention, the specific technical implementation and its advantages, the following will be combined with the embodiments of the present invention and its related drawings for a detailed and complete description. It should be emphasized that the embodiments described here are only a part of the many possible implementations of the present invention, not all. Based on the core ideas and principles disclosed by the present invention, any other embodiments explored by ordinary technicians in this field without the need for creative work should be deemed to fall within the scope of protection of the present invention.

[0035] The present invention provides a high heat flux density component heat dissipation system, the heat dissipation system comprises a semiconductor refrigeration sheet 2, a graphene heat sink 1, a radiator, and a temperature control chip 5, wherein the semiconductor refrigeration sheet 2 comprises a cold end 2A and a hot end 2B; The graphene heat sink 1 is a four-sided pyramid with four trapezoidal sides and a rectangular top surface 1B and bottom surface 1A. The top surface 1B with a smaller area is connected to the electronic components with high heat flux density, and the bottom surface 1A with a larger area is connected to the cold end 2A of the semiconductor refrigeration sheet 2. There is also a square throttling channel 1C on the outside of the graphene heat sink, which increases the passive heat dissipation area and improves the convective heat transfer speed. The temperature control chip 5 surrounds the side of the semiconductor refrigeration sheet 2, and the temperature sensing probe of the temperature control chip is connected to the bottom surface 1A of the graphene heat sink 1; The area of ​​the top surface 1B of the tetrahedral graphene heat sink 1 is the same as the heat source area of ​​the electronic component with high heat flux density; This cooling system is targeted at components with high heat flux density.

[0036] Based on the above technical solution, the present invention can also be improved as follows.

[0037] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the heat sink includes a fin assembly 3 and a fan 4, a receiving cavity is opened in the middle of the fin assembly 3, and the fan 4 is connected to the receiving cavity.

[0038] Furthermore, in the above-mentioned high heat flux density component cooling system, the fin assembly includes a connecting fin 3B and a plurality of single fins 3A, the hot end 2B is connected to the connecting fin 3B of the fin assembly 3, the plurality of single fins 3A are connected in parallel and at intervals on a side of the connecting fin 3B away from the hot end 2B, a receiving cavity is formed in the middle of the plurality of single fins 3A, a fan 4 is connected in the receiving cavity, a fin channel is formed between adjacent single fins 3A arranged at intervals, and the fan 4 is used to dissipate heat from the fin channel.

[0039] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the hot end 2B of the semiconductor cooling plate 2 is connected to the fin assembly, and the fin assembly is then cooled by the fan 4 of the radiator.

[0040] Furthermore, in the above-mentioned high heat flux density component cooling system, the temperature sensing probe 5A of the temperature control chip 5 is connected to the bottom surface 1A of the tetrahedral graphene heat sink 1, and the output end of the temperature control chip 5 is connected to the semiconductor cooling sheet 2. By detecting and feeding back the temperature of the tetrahedral graphene heat sink 1, the working current of the semiconductor cooling sheet 2 is adjusted, thereby achieving the effect of intelligent temperature control.

[0041] Furthermore, in the above-mentioned high heat flux density component cooling system, the bottom surface 1A of the quadrangular pyramid graphene heat sink 1 has an area of ​​42×42 mm, the top surface 1B has an area of ​​10×10 mm, the height is 5 mm, and the side length of the square hole in the throttling channel 1C is 1 mm.

[0042] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the size of the semiconductor cooling plate 2 is 40×40×3.8 mm.

[0043] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, a throttling channel is opened in a circle near the top surface and a circle near the bottom surface of the graphene heat sink, and the throttling channel on the top surface is connected to the throttling channel on the bottom surface through a connecting channel opened inside the graphene heat sink.

[0044] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the connecting channel can be linear, or can be bent in an S-shape, Z-shape, spiral shape, etc.

[0045] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the number of throttling heat dissipation holes on the top surface is the same as the number of throttling heat dissipation holes on the bottom surface, and they are connected one by one through the same number of connecting channels.

[0046] Furthermore, in the above-mentioned high heat flux density component heat dissipation system, the semiconductor cooling plate 2 is a TEC semiconductor cooling plate 2.

[0047] The temperature control chip 5 is placed on the bottom surface 1A of the tetrahedral graphene heat sink 1, the hot end 2B of the semiconductor cooling sheet 2 is connected to the radiator fin, and the radiator fan 4 dissipates heat from the fin assembly.

[0048] A method for cooling components with high heat flux density uses the above-mentioned heat dissipation system. The temperature sensing probe 5A monitors the temperature. The control unit of the temperature control chip compares the current temperature with the set temperature. If the current temperature is higher than the set temperature, the control unit controls the semiconductor cooling chip to increase the working current and absorb heat, thereby controlling the temperature of the electronic components with high heat flux density; if the current temperature is lower than the set temperature, the control unit controls the semiconductor cooling chip to reduce the working current and reduce energy consumption, thereby controlling the temperature of the electronic components with high heat flux density.

[0049] The existing technology uses semiconductor cooling sheets connected to high heat flux density electronic components, which will cause uneven heat dissipation. At the same time, the backplane temperature is too low, condensation occurs, and the internal circuit is damaged. Traditional materials such as copper and aluminum are prone to reduced heat dissipation performance in high temperature and high heat flux environments. The application of graphene effectively overcomes this shortcoming and provides a more stable heat dissipation performance.

[0050] Example 1 See also Figures 1 to 6 The present invention provides a heat dissipation system for components with high heat flux density. It includes a four-sided pyramidal graphene heat sink 1 with four trapezoidal sides and rectangular top surface 1B and bottom surface 1A, a TEC semiconductor refrigeration plate 2, a radiator, and a temperature control chip 5. The radiator includes a fin assembly 3 and a fan 4. A receiving cavity is provided in the middle of the fin assembly 3, and the fan 4 is connected to the receiving cavity. A throttling channel 1C for enhancing passive heat exchange is provided on the side of the graphene heat sink. A plurality of throttling heat dissipation holes connected to the air are spaced apart on the throttling channel 1C. The throttling channel 1C increases the heat convection heat exchange area and improves the convection heat exchange rate. The bottom surface 1A of the four-sided pyramidal graphene heat sink 1 has an area of ​​42×42mm; the top surface 1B has an area of ​​10×10mm; the height is 5mm; and the side length of the square hole in the throttling channel 1C is 1mm. The bottom surface 1A of the quadrangular pyramid-shaped graphene heat sink 1 is connected to the TEC semiconductor cooling sheet 2 , and the top surface 1B of the graphene heat sink 1 is connected to high heat flux density electronic components.

[0051] In this embodiment, further, the fin assembly includes a connecting fin 3B and a plurality of single fins 3A, the plurality of single fins 3A are connected in parallel and at intervals on a side of the connecting fin 3B away from the hot end 2B, a receiving cavity is formed in the middle of the plurality of single fins 3A, a fan 4 is connected in the receiving cavity, a fin channel is formed between adjacent single fins 3A arranged at intervals, and the fan 4 is used to dissipate heat from the fin channel.

[0052] In this embodiment, the high heat flux density electronic components may be K50 chips, LED light sources, laser modules, etc.

[0053] In this embodiment, the TEC semiconductor refrigeration sheet 2 is divided into a cold end 2A and a hot end 2B, with a size of 40×40×3.8 mm. The cold end 2A is connected to the bottom surface 1A of the tetrahedral graphene heat sink 1, and absorbs the temperature of the high heat flux density electronic components conducted from the bottom surface 1A of the tetrahedral graphene heat sink 1; the hot end 2B is connected to the connecting fin 3B of the fin assembly 3, and releases heat to the fin assembly 3.

[0054] In this embodiment, the temperature sensing probe 5A in the temperature control chip 5 is located on the bottom surface 1A of the quadrangular pyramid graphene heat sink 1, surrounding the semiconductor cooling sheet 2. By detecting and feeding back the temperature of the quadrangular pyramid graphene heat sink 1, the working current of the TEC semiconductor cooling sheet 2 is adjusted, thereby achieving the effect of intelligent temperature control. Since the area of ​​the bottom surface of the graphene heat sink is larger than the area of ​​the semiconductor cooling sheet 2, the temperature sensing probe can be connected to the bottom surface 1A of the quadrangular pyramid graphene heat sink 1 while ensuring that one side of the bottom surface of the graphene heat sink is connected to the cold end 2A of the semiconductor cooling sheet 2.

[0055] In this embodiment, throttling channels are provided in a circle near the top surface and a circle near the bottom surface of the graphene heat sink, and the throttling channel on the top surface is connected to the throttling channel on the bottom surface through a connecting channel provided inside the graphene heat sink.

[0056] In this embodiment, the connecting channel may be linear, or may be bent in an S-shape, a Z-shape, a spiral shape, etc.

[0057] In this embodiment, the number of the throttling heat dissipation holes is not limited, and can be densely or loosely arranged. For example, 10, 20, 25, etc. can be arranged, and the specific number depends on the needs.

[0058] In this embodiment, the number of throttling heat dissipation holes on the top surface may be the same as the number of throttling heat dissipation holes on the bottom surface, and they are connected one-to-one through the same number of connecting channels.

[0059] Combination Figure 1 and Figure 4 The size of the largest single fin is 45×27×1.29 mm. Fan 4 blows air into the fin channel to take away the heat from the fin assembly.

[0060] The TEC semiconductor cooling piece and the fan are both connected to a temperature control chip, and the temperature control chip controls the magnitude of the current of the TEC semiconductor cooling piece and controls the start or stop of the fan through the temperature feedback from the temperature sensing probe.

[0061] After the above structures are mechanically connected, electrical connections are made to the components, mainly the TEC semiconductor cooling sheet, the temperature control chip and the fan.

[0062] At present, passive heat dissipation materials used for electronic components are mainly copper or aluminum. The core component of the high heat flux density component heat dissipation system proposed in the present invention is a graphene heat sink. The thermal conductivity of this material is significantly better than that of copper and aluminum. The thermal conductivity can reach 2000-5000 W / (m·K), which is much higher than copper (about 400 W / (m·K)) and aluminum (about 200 W / (m·K)).

[0063] When in use, the temperature probe monitors the temperature, and the control unit of the temperature control chip compares the current temperature with the set temperature. If the current temperature is higher than the set temperature, the control unit controls the semiconductor cooling chip to increase the working current and absorb heat, thereby controlling the temperature of high heat flux density electronic components; if the current temperature is lower than the set temperature, the control unit controls the semiconductor cooling chip to reduce the working current and reduce energy consumption, thereby controlling the temperature of high heat flux density electronic components. The temperature of high heat flux density electronic components is also connected to the temperature probe to monitor the temperature of high heat flux density electronic components in a timely manner.

[0064] It will be appreciated that spatial relationship terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It will be appreciated that, in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0065] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through an intermediate element. The "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0066] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0067] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A high heat flux density component heat dissipation system, characterized in that: The heat dissipation system comprises a semiconductor cooling sheet (2), a graphene heat sink (1), a radiator, and a temperature control chip (5); the semiconductor cooling sheet (2) comprises a cold end (2A) and a hot end (2B); The graphene heat sink (1) is a four-sided pyramid with four trapezoidal side surfaces and a rectangular top surface (1B) and bottom surface (1A). A throttling channel (1C) for enhancing passive heat exchange is provided on the side surface. A plurality of throttling heat dissipation holes connected to the air are provided at intervals on the throttling channel (1C). The throttling channel (1C) increases the heat convection heat exchange area and improves the heat convection heat exchange rate. One side of the top surface (1B) with a smaller area is connected to an electronic component with a high heat flux density, and one side of the bottom surface (1A) with a larger area is connected to the cold end (2A) of the semiconductor cooling plate (2). The temperature control chip (5) surrounds the side of the semiconductor cooling sheet (2), and the temperature sensing probe of the temperature control chip is connected to the bottom surface (1A) of the graphene heat sink (1); The area of ​​the top surface (1B) of the tetrahedral graphene heat sink (1) is the same as the heat source area of ​​the electronic component with high heat flux density; This cooling system is targeted at components with high heat flux density.

2. A high heat flux density component heat dissipation system according to claim 1, characterized in that: The heat sink comprises a fin assembly (3) and a fan (4); a receiving cavity is provided in the middle of the fin assembly (3), and the fan (4) is connected to the receiving cavity.

3. A high heat flux density component heat dissipation system according to claim 2, characterized in that: The fin assembly comprises a connecting fin (3B) and a plurality of single fins (3A); the hot end (2B) is connected to the connecting fin (3B) of the fin assembly (3); the plurality of single fins (3A) are connected in parallel and at intervals on a side of the connecting fin (3B) away from the hot end (2B); a receiving cavity is formed in the middle of the plurality of single fins (3A); a fan (4) is connected in the receiving cavity; a fin channel is formed between adjacent single fins (3A) arranged at intervals; the fan (4) is used to dissipate heat from the fin channel.

4. A high heat flux density component heat dissipation system according to claim 2, characterized in that: The hot end (2B) of the semiconductor cooling sheet (2) is connected to the fin assembly (3), and the fin assembly (3) is then cooled by the fan (4) of the radiator.

5. The high heat flux density component heat dissipation system according to claim 1, characterized in that: The temperature control chip (5) comprises a temperature sensing probe (5A), the temperature sensing probe (5A) being connected to the bottom surface (1A) of the quadrangular pyramid-shaped graphene heat sink (1), and the output end of the temperature control chip (5) being connected to the semiconductor cooling sheet (2). By detecting and feeding back the temperature of the quadrangular pyramid-shaped graphene heat sink (1), the working current of the semiconductor cooling sheet (2) is adjusted, thereby achieving an intelligent temperature control effect.

6. A high heat flux density component heat dissipation system according to claim 1, characterized in that: The bottom surface (1A) of the tetrahedral graphene heat sink (1) has an area of ​​42×42 mm, the top surface (1B) has an area of ​​10×10 mm, and the height is 5 mm; the throttling channel (1C) is a square hole, and the side length of the square hole is 1 mm.

7. A high heat flux density component heat dissipation system according to claim 1, characterized in that: The size of the semiconductor cooling sheet (2) is 40×40×3.8 mm.

8. The high heat flux density component heat dissipation system according to claim 1, characterized in that: The semiconductor refrigeration sheet (2) is a TEC semiconductor refrigeration sheet (2).

9. The high heat flux density component heat dissipation system according to claim 1, characterized in that: The graphene heat sink (1) is provided with throttling channels in a circle near the top surface and in a circle near the bottom surface, and the throttling channels in the top surface are connected with the throttling channels in the bottom surface through a connecting channel provided inside the graphene heat sink.

10. A method for heat dissipation of high heat flux density components, characterized in that: When the heat dissipation system described in any one of claims 1 to 9 is used, when the semiconductor cooling plate is not used for active heat dissipation, the throttling channel (1C) on the side of the graphene heat sink can be used to increase the air convection heat exchange effect, and the air temperature near the heat source rises, resulting in a decrease in density, thereby strengthening the flow of air near the heat source, generating a phenomenon of heat convection, and improving the passive heat dissipation capacity; when active temperature control is performed, the temperature sensing probe (5A) monitors the temperature, and the control unit of the temperature control chip (5) compares the current temperature with the set temperature. If the current temperature is higher than the set temperature, the control unit controls the semiconductor cooling plate (2) to increase the working current and absorb heat, thereby controlling the temperature of the high heat flux density electronic components; if the current temperature is lower than the set temperature, the control unit controls the semiconductor cooling plate (2) to reduce the working current and reduce energy consumption, thereby controlling the temperature of the high heat flux density electronic components.

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