Multi-wavelength semiconductor laser breeding device and irradiation breeding method

Through the design of multi-wavelength semiconductor laser breeding device, the short-wave and long-wave laser modules of interlaced arrays are used to form large-area rectangular spots, which solves the problems of low efficiency and high cost of existing laser breeding equipment, and achieves efficient lure of large-scale crop seeds Change breeding treatment improves breeding efficiency and quality.

CN119278856APending Publication Date: 2025-01-10CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202411763600.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-03
Publication Date
2025-01-10

AI Technical Summary

Technical Problem

The existing laser breeding equipment has problems such as few samples, low efficiency and high cost when processing staple food seeds, which cannot meet the needs of processing tons of seeds in a short time, and a single variety of lasers cannot meet the needs of large-throughput processing.

Method used

Design a multi-wavelength semiconductor laser breeding device, adopt a high-power semiconductor laser as the light source, and form a large-area rectangular spot through the interlaced array of short-wave and long-wave laser modules. Use laser coherence characteristics to activate the germ and nutrients of the seeds to promote seed mutation. Improve breeding efficiency.

Benefits of technology

It has achieved the improvement of seed germination rate, nutrient content in the germ and seed mutation rate, and met the efficient mutagenesis breeding treatment of large-scale crop seeds, reducing costs and improving breeding efficiency and quality.

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Abstract

The invention relates to the technical field of seed cultivation and planting, in particular to a multi-wavelength semiconductor laser breeding device and an irradiation breeding method. The device comprises a laser breeding light source module, a circuit controller and an equipment fixing bracket, a plurality of stand columns are arranged in the equipment fixing support, and a supporting table top is arranged at the top of the equipment fixing support. The side of the laser breeding light source module is fixedly connected with the stand column; the circuit controller is fixed on the supporting table top; the laser breeding light source module is at least provided with a short-wave laser module and a long-wave laser module; the short-wave laser module and the long-wave laser module emit rectangular light spots, and the rectangular light spots irradiate crop seeds in a staggered array manner; and the laser breeding light source module is in electrical control connection with the circuit controller through a cable. The method has the advantages that a high-power semiconductor laser is adopted as a light source, laser irradiates seeds, germs, nutrient substances and enzymes of the seeds are activated by utilizing laser coherence characteristics, the seed vigor is improved, and mutation of the seeds is promoted.
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Description

Technical Field

[0001] The invention relates to the technical field of seed cultivation and planting, and in particular to a multi-wavelength semiconductor laser breeding device and an irradiation breeding method. Background Art

[0002] Seeds are the "chips" of agriculture and the key to ensuring food security. In the context of the increasingly severe global food security situation, cultivating new varieties of crops with high resistance and high yield is the most urgent task for agricultural development.

[0003] At present, the use of lasers for breeding has been proven to be feasible. It has the advantages of high efficiency, stable traits, high selectivity, contemporary variation, no pollution, and low radiation damage, and occupies an important position in modern agricultural breeding technology. At present, reports on laser breeding are mainly concentrated on helium-neon lasers, carbon dioxide lasers, ruby ​​lasers, all-solid-state lasers, etc. Compared with the above lasers, semiconductor lasers have the advantages of direct electrical pumping, high electro-optical conversion efficiency, high output power, wide spectral spectrum, low power consumption, and small size. They are ideal light sources for breeding and seedling cultivation.

[0004] The Chinese invention patent with publication number CN108094195B, publication date April 16, 2021, and invention name “A method for efficient mutagenesis breeding of corn” discloses a technical solution for using helium-neon laser to treat corn pollen to achieve high-efficiency mutagenesis breeding. However, the mutagenesis efficiency of corn obtained in the laboratory is low and the scale is small. Another Chinese invention patent application with publication number CN117242936A, publication date December 19, 2023, and invention name “A method for accelerating breeding using laser irradiation” discloses a method for accelerating soybean breeding using semiconductor lasers. The seeds are placed on a positioning platform and irradiated with red and blue semiconductor lasers to promote radicle growth and increase seed germination rate; however, the power used is relatively low, which is not conducive to the production of specific mutations in seeds.

[0005] Existing laser breeding equipment is still in its infancy, mainly using a single type of laser to process seeds or tissues, which cannot meet the needs of high-throughput processing and has various problems. In the patent documents cited above, laser breeding devices are generally simple laser platforms or small instruments, which have the problems of small number of processed samples, low efficiency and high cost. The above problems seriously affect the application prospects of laser breeding equipment in large-scale processing of staple food seeds. Considering that tons of seeds need to be processed in a short period of time in staple food planting, a low-cost, high-throughput laser breeding equipment is needed to use lasers to stimulate seed vitality and promote seed mutations. Summary of the invention

[0006] In order to solve the above problems, the present invention provides a multi-wavelength semiconductor laser breeding device and an irradiation breeding method.

[0007] The first object of the present invention is to provide a multi-wavelength semiconductor laser breeding device, comprising: a laser breeding light source module, a circuit controller and an equipment fixing bracket; The equipment fixing bracket is provided with a plurality of columns, and a supporting table is provided on the top of the equipment fixing bracket; the circuit controller is placed on the supporting table; The laser breeding light source module is fixedly connected to the column; the laser breeding light source module is provided with a short-wave laser module and a long-wave laser module, the short-wave laser module and the long-wave laser module are used to emit rectangular light spots, and the rectangular light spots are irradiated on the crop seeds in a staggered array; The long-wave laser module and the short-wave laser module have the same structure, and both include a laser, a focusing lens and a lens array arranged in sequence from top to bottom, and the central axes of the focusing lens and the lens array are aligned with the light-emitting axis of the laser; The laser breeding light source module is electrically controlled and connected to the circuit controller via a cable.

[0008] Preferably, the emission laser wavelengths of the short-wave laser module and the long-wave laser module cover a range of 200-2000 nm.

[0009] Preferably, the laser energy of the rectangular spot staggered array is greater than 50 μmol / m 2 / s rectangular light field.

[0010] Preferably, the equipment fixing bracket is a frame structure, and at least four columns with the same structure are provided in the equipment fixing bracket, and each column is provided with an angle support component; the corners of the laser breeding light source module are provided with connecting fixing flanges, and the fixing flanges are fixed to the equipment fixing bracket through angle support components.

[0011] Preferably, the lower end surface of the laser breeding light source module is also provided with a high light transmittance panel.

[0012] Preferably, the circuit controller includes a controller housing, a touch screen, an emergency stop switch, a controller power inlet, and a controller switch; The touch display screen and the emergency stop switch are arranged at the front end of the controller housing; the controller power inlet and the controller switch are respectively arranged at the rear and side of the controller housing.

[0013] The second object of the present invention is to provide a multi-wavelength semiconductor laser irradiation breeding method, which uses the multi-wavelength semiconductor laser breeding device for irradiation, and comprises the following steps: S1. Spread the seeds on the loading platform and position the loading platform directly below the multi-wavelength semiconductor laser breeding device; S2. Turn on the laser breeding light source module of the multi-wavelength semiconductor laser breeding device to irradiate the seeds for 1-30 minutes.

[0014] Preferably, there is at least one multi-wavelength semiconductor laser breeding device.

[0015] Compared with the prior art, the present invention can achieve the following beneficial effects: The present invention proposes a laser breeding equipment based on semiconductor lasers, which adopts a high-power semiconductor laser as a light source, selects lasers of appropriate power density to irradiate seeds, and utilizes the coherent characteristics of the laser to activate the embryo, nutrients and enzymes of the seeds, thereby improving seed vitality and promoting its mutation, and improving the breeding efficiency of excellent crop varieties. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is an overall schematic diagram of a multi-wavelength semiconductor laser breeding device provided according to an embodiment of the present invention.

[0017] Figure 2 The figure is a bottom view of the laser front axis side of a multi-wavelength semiconductor laser breeding device provided according to an embodiment of the present invention.

[0018] Figure 3 It is a bottom view of a laser breeding light source module of a multi-wavelength semiconductor laser breeding device provided according to an embodiment of the present invention.

[0019] Figure 4 It is a schematic diagram of the laser optical path of a multi-wavelength semiconductor laser breeding device provided according to an embodiment of the present invention.

[0020] Figure 5 This is a physical picture of a multi-wavelength semiconductor laser breeding device provided according to an embodiment of the present invention.

[0021] Reference numerals: 1. Laser breeding light source module; 11. Light source power supply access port; 12. Short-wave laser module; 121. Laser; 122. Focusing lens; 123. Lens array; 13. Long-wave laser module; 14. High light transmittance panel; 2. Circuit controller; 21. Controller housing; 22. Touch screen; 23. Emergency stop switch; 24. Controller power inlet; 25. Controller switch; 26. Power indicator light; 3. Equipment fixing bracket; 31. Column; 32. Supporting table top; 33. Corner bracket component; 4. Loading platform; 5. Rectangular light field. DETAILED DESCRIPTION

[0022] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same modules are represented by the same reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, the detailed description thereof will not be repeated.

[0023] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0024] Example 1 See also Figures 1 to 5 As shown, this embodiment provides a multi-wavelength semiconductor laser breeding device, which includes: a laser breeding light source module 1, a circuit controller 2, and an equipment fixing bracket 3; The equipment fixing bracket 3 is provided with at least four columns 31 of the same structure, and each column 31 is provided with an angle support component 33; the top of the equipment fixing bracket 3 is provided with a supporting table 32, and the supporting table 32 and the columns 31 together form the frame structure of the equipment fixing bracket 3.

[0025] The laser breeding light source module 1 is provided with a connecting and fixing flange at the corner, and the connecting and fixing flange is fixed on the equipment fixing bracket 3 through the corner bracket component 33; the laser breeding light source module 1 and the circuit controller 2 are electrically controlled and connected through a cable; Specifically, the laser breeding light source module 1 is provided with a short-wave laser module 12 and a long-wave laser module 13; the emission light sources of the short-wave laser module 12 and the long-wave laser module 13 are located at the lower end surface of the laser breeding light source module 1; The short-wave laser module 12 comprises: a laser 121, a focusing lens 122, and a lens array 123; the laser 121, the focusing lens 122, and the lens array 123 are stacked in sequence, and the central axes of the focusing lens 122 and the lens array 123 are aligned with the light-emitting axis of the laser 121; The long-wave laser module 13 and the short-wave laser module 12 have the same structure; the short-wave laser module 12 and the long-wave laser module 13 are electrically controlled and connected to the circuit controller 2 via cables; The lower end surface of the laser breeding light source module 1 is also provided with a high light transmittance panel 14, which is used to achieve a high pass rate of the emitted light source and to prevent dust; the laser breeding light source module 1 is also provided with a light source power supply access port 11; The laser energy emitted by the short-wave laser module 12 and the long-wave laser module 13 exceeds 50 μmol / m 2 / s; the laser breeding light source module 1 is used as a laser output module, and the emitted laser is shaped into a rectangular spot after passing through the lens array 123 (that is, a large area spot is formed on the upper surface of the seed after the laser passes through the lens array).

[0026] The circuit controller 2 is fixed on the support table 32; the circuit controller 2 includes: a controller housing 21, a touch screen 22, an emergency stop switch 23, a controller power inlet 24, and a controller switch 25; The touch screen 22 and the emergency stop switch 23 are arranged at the front end of the controller housing 21; the controller power inlet 24 and the controller switch 25 are arranged at the rear and side of the controller housing 21; The touch screen 22 is used to set the parameters of the lasers of various wavelengths output by the laser breeding light source module 1, including but not limited to power, repetition frequency, pulse width and other parameters.

[0027] The front end surface of the circuit controller 2 is also provided with a power indicator light 26 .

[0028] Example 2 This embodiment provides a multi-wavelength semiconductor laser breeding device array, which is composed of at least two groups of multi-wavelength semiconductor laser breeding devices; the multi-wavelength semiconductor laser breeding device is a multi-wavelength semiconductor laser breeding device described in Example 1.

[0029] The laser emitted by the laser breeding light source module 1 is shaped into a rectangular spot after being shaped by the lens array 123; the uniformity of the laser light energy distribution is higher than 80%, and the laser energy formed at the carrier platform 4 is greater than 50μmol / m 2 / s rectangular light field 5.

[0030] The emission laser wavelength coverage range of the short-wave laser module 12 and the long-wave laser module 13 in the laser breeding light source module 1 is 200-2000nm; By using two wavelengths of laser light, the short-wave laser module 12 and the long-wave laser module 13, efficient mutagenesis of different crop seeds can be achieved; the short-wave laser module 12 and the long-wave laser module 13 arranged in an alternating array effectively superimpose laser fields of multiple wavelengths (2-9 wavelengths) to obtain laser fields with uniform energy density of multiple wavelengths, thereby achieving uniform mutagenesis of crop seeds and increasing the mutation probability and mutagenesis quality of seeds.

[0031] Example 3 This embodiment provides a multi-wavelength semiconductor laser irradiation breeding method, which uses at least one multi-wavelength semiconductor laser breeding device for irradiation, and includes the following steps: S1. Spread the seeds on the carrier platform 4 and position the carrier platform 4 directly below the multi-wavelength semiconductor laser breeding device; S2. Turn on the laser breeding light source module 1 of the multi-wavelength semiconductor laser breeding device to irradiate the seeds for 1-30 minutes.

[0032] After irradiation, the indicators were measured; the results showed that the seed germination rate increased by 5-10%, the amino acid content in the germ increased by 5-15%, the amylopectin content increased by 4-16%, the soluble protein content increased by 20-100%, and the reducing sugar content increased by 50%. After the autumn harvest, the average yield per mu increased by 5-10%.

[0033] The purpose of the present invention is to solve the problems of small number of processed samples, low efficiency and high cost of laser breeding devices in the agricultural field. By adopting a laser breeding light source based on a lens array, the laser beam is shaped into a rectangular light spot by using a lens array, etc., to improve the energy uniformity of the beam, and at the same time, by reasonably arranging the positions of multiple wavelength laser modules, a large-area rectangular laser field with uniform energy distribution and multiple wavelength energy superposition is formed, so as to realize the mutagenesis breeding treatment of large quantities of crop seeds, improve the efficiency and quality of breeding, and meet the great demand for large-scale crop seed treatment in the agricultural field.

[0034] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0035] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A multi-wavelength semiconductor laser breeding device, characterized in that: include: Laser breeding light source module, circuit controller and equipment fixing bracket; The equipment fixing bracket is provided with a plurality of columns, and a supporting table is provided on the top of the equipment fixing bracket; the circuit controller is placed on the supporting table; The laser breeding light source module is fixedly connected to the column; the laser breeding light source module is provided with a short-wave laser module and a long-wave laser module, the short-wave laser module and the long-wave laser module are used to emit rectangular light spots, and the rectangular light spots are irradiated on the crop seeds in a staggered array; The long-wave laser module and the short-wave laser module have the same structure, and both include a laser, a focusing lens and a lens array arranged in sequence from top to bottom, and the central axes of the focusing lens and the lens array are aligned with the light-emitting axis of the laser; The laser breeding light source module is electrically controlled and connected to the circuit controller via a cable.

2. A multi-wavelength semiconductor laser breeding device according to claim 1, characterized in that: The emission laser wavelengths of the short-wave laser module and the long-wave laser module cover a range of 200-2000 nm.

3. The multi-wavelength semiconductor laser breeding device according to claim 1, characterized in that: The laser energy of the rectangular spot staggered array is greater than 50 μmol / m 2 / s rectangular light field.

4. The multi-wavelength semiconductor laser breeding device according to claim 1, characterized in that: The equipment fixing bracket is a frame structure, and is provided with at least four columns with the same structure, and each column is provided with an angle support component; the corners of the laser breeding light source module are provided with connecting fixing flanges, and the fixing flanges are fixed to the equipment fixing bracket through the angle support components.

5. The multi-wavelength semiconductor laser breeding device according to claim 1, characterized in that: The lower end surface of the laser breeding light source module is also provided with a high light transmittance panel.

6. The multi-wavelength semiconductor laser breeding device according to claim 1, characterized in that: The circuit controller includes a controller housing, a touch screen, an emergency stop switch, a controller power inlet, and a controller switch; The touch display screen and the emergency stop switch are arranged at the front end of the controller housing; The controller power inlet and the controller switch are respectively arranged at the rear and side of the controller housing.

7. A multi-wavelength semiconductor laser irradiation breeding method, using a multi-wavelength semiconductor laser breeding device according to any one of claims 1 to 6 for irradiation, characterized in that: The steps include: S1. Spread the seeds on the loading platform and position the loading platform directly below the multi-wavelength semiconductor laser breeding device; S2. Turn on the laser breeding light source module of the multi-wavelength semiconductor laser breeding device to irradiate the seeds for 1-30 minutes.

8. The multi-wavelength semiconductor laser irradiation breeding method according to claim 7, characterized in that: There is at least one multi-wavelength semiconductor laser breeding device.

Citation Information

Patent Citations

  • A Highly Efficient Mutation Breeding Method for Maize

    CN108094195B

  • Method for accelerating breeding by adopting laser irradiation

    CN117242936A