Exhaust distribution device, exhaust system and deposition and / or etching apparatus

Abstract

The invention relates to an exhaust gas distribution device (1) for guiding an exhaust gas flow of gases (7) to be exhausted in a deposition and / or etching chamber (6) of a deposition and / or etching apparatus (200), characterized in that the exhaust gas distribution device (1) has an exhaust gas distribution plate (2) and a shield (3), wherein the exhaust gas distribution plate (2) has a semi-enclosing shape and thus has a gap (16) and a plurality of exhaust gas openings (5) are provided on the exhaust gas distribution plate (2), wherein in a state in which the exhaust gas distribution device (1) is located in the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200), the shield (3) is configured to at least shield a portion of an exhaust gas outlet (8) of the deposition and / or etching chamber (6) which is located above the exhaust gas distribution plate (2). The invention also relates to an exhaust gas system (100) and a deposition and / or etching apparatus (200).

Description

TECHNICAL FIELD

[0001] The present application relates to an exhaust gas distribution device, an exhaust gas system having the exhaust gas distribution device, and a deposition and / or etching apparatus having the exhaust gas system. BACKGROUND

[0002] Silicon carbide (SiC) is a representative material of the third generation semiconductor material, which has excellent properties such as wide band gap, high critical breakdown electric field, high electron saturation drift velocity, and high thermal conductivity, and thus has attracted much attention in the field of power electronic devices. Silicon carbide trench metal oxide semiconductor field effect transistor (SiC Trench MOSFET) is one of the main power device types at present. Among them, the trench MOSFET has lower conduction loss, better switching performance, higher wafer density, and can avoid the generation of parasitic JFET effect compared with the traditional planar structure MOSFET, and has been concerned in recent years.

[0003] An important process for preparing the trench MOSFET is etching of the SiC wafer. Etching technology is a key supporting technology in the development of SiC devices. In the preparation process of SiC devices, etching precision, etching damage, and etching surface residues of the etching process all have an impact on the development and performance of SiC devices.

[0004] In the etching process of the SiC wafer, the reaction gas introduced into the deposition and / or etching apparatus is excited to generate plasma, and the plasma reacts with the SiC wafer to generate polymer while generating gas SiF4. The polymer is deposited on the upper surface of the SiC wafer and the peripheral wall of the etched trench. The polymer deposited on the upper surface of the SiC wafer is removed by high-energy particle bombardment. Therefore, the non-uniformity of the polymer deposition will cause the etching degree of the surface of the SiC wafer protected by the polymer to be different, thereby affecting the uniformity of the trench of the SiC Trench MOSFET.

[0005] Therefore, improving the non-uniformity of the polymer deposition is of great significance to the improvement of the uniformity of the trench of the SiC Trench MOSFET. Among them, the uniformity of the polymer deposition is affected by the exhaust method of the deposition and / or etching apparatus. The side extraction method in the prior art negatively affects the uniformity of the polymer deposition.

[0006] In addition, there are similar exhaust problems in etching other wafers (such as silicon wafers) or other deposition processes of wafers, so the above problems also need to be solved. SUMMARY

[0007] The object of the present application is to propose an exhaust gas distribution device, an exhaust system having an exhaust gas distribution device and a deposition and / or etching apparatus having an exhaust system, which at least one of the above-mentioned problems is solved.

[0008] To achieve the above object, the present application proposes an exhaust gas distribution device for guiding an exhaust gas flow of exhaust gases to be discharged in a deposition and / or etching chamber of a deposition and / or etching apparatus, characterized in that the exhaust gas distribution device has an exhaust gas distribution plate and a shield, wherein the exhaust gas distribution plate has a semi-encircling shape and thus has a gap, and a plurality of exhaust gas holes are provided on the exhaust gas distribution plate, wherein in a state in which the exhaust gas distribution device is located in the deposition and / or etching chamber of the deposition and / or etching apparatus, the shield is configured to at least shield a portion of an exhaust port of the deposition and / or etching chamber which is above the exhaust gas distribution plate.

[0009] In some embodiments, in a state in which the exhaust gas distribution device is located in the deposition and / or etching chamber of the deposition and / or etching apparatus, the shield also partially shields a portion of the exhaust port of the deposition and / or etching chamber which is below the exhaust gas distribution plate.

[0010] In some embodiments, the exhaust gas distribution plate and the shield are connected to each other at an edge of the exhaust gas distribution plate by means of a form fit, a force lock and / or a material lock.

[0011] In some embodiments, the exhaust gas distribution plate and the shield are a one-piece component.

[0012] In some embodiments, the exhaust gas distribution plate has a ring shape with a gap, wherein the ring shape follows the shape of a circle except for the gap.

[0013] In some embodiments, the exhaust gas distribution plate has a U shape with a gap.

[0014] In some embodiments, at least a portion of the shield is arranged along an outer edge of the exhaust gas distribution plate, and / or the shape of the shield is adapted to the shape of a peripheral wall of the deposition and / or etching chamber in which the exhaust gas distribution device is located.

[0015] In some embodiments, the gap and the shield are located at opposite sides of the exhaust gas distribution device.

[0016] In some embodiments, the plurality of exhaust gas holes are uniformly distributed on the exhaust gas distribution plate, and / or the hole diameter of each exhaust gas hole is the same.

[0017] In some embodiments, the exhaust distribution plate has a plurality of sub-areas, the exhaust holes on the plurality of sub-areas differing in number, density, and / or aperture size of the exhaust holes.

[0018] In some embodiments, the exhaust distribution plate has a reinforcing rib.

[0019] In some embodiments, the exhaust distribution plate has a semi-enclosed shape with an accommodation space defined therein for accommodating a wafer.

[0020] In some embodiments, in a state in which the exhaust distribution device is located in a deposition and / or etching chamber of a deposition and / or etching apparatus, the cutout of the exhaust distribution plate is arranged to be through the wafer transfer port of the deposition and / or etching chamber and thus forms a wafer transfer passage.

[0021] In some embodiments, the exhaust distribution plate and / or the shield has a fastening device for detachably fastening in the deposition and / or etching chamber.

[0022] Furthermore, the present application proposes an exhaust system for a deposition and / or etching apparatus, characterized in that the exhaust system has an exhaust distribution device according to the present application, an exhaust channel downstream of the exhaust distribution device, and an exhaust pump, wherein the exhaust channel opens into a deposition and / or etching chamber of the deposition and / or etching apparatus via an exhaust port, and the shield is used to at least shield the portion of the exhaust port of the deposition and / or etching chamber that is above the exhaust distribution plate, so that, when the exhaust pump is operating, the gas to be exhausted can first be directed downward through the exhaust holes on the exhaust distribution device, and then be directed below the exhaust distribution plate to the portion of the exhaust port that is below the exhaust distribution plate, and further from the exhaust port into the exhaust channel.

[0023] In some embodiments, the shield is fastened at the edge of the exhaust port of the deposition and / or etching chamber in a form-fitting, force-locking, and / or material-locking manner.

[0024] In some embodiments, a seal is provided between the shield and the edge of the exhaust port of the deposition and / or etching chamber.

[0025] Furthermore, the present application proposes a deposition and / or etching apparatus, characterized in that the deposition and / or etching apparatus has an exhaust system for a deposition and / or etching apparatus according to the present application, wherein the deposition and / or etching apparatus has a process table, and the deposition and / or etching chamber of the deposition and / or etching apparatus has a wafer transfer port, wherein the exhaust distribution plate of the exhaust distribution device and the wafer to be etched are both arranged on the process table.

[0026] In some embodiments, the exhaust gas distribution plate of the exhaust gas distribution device is detachably mounted on a process table of the deposition and / or etching apparatus.

[0027] In some embodiments, the shield of the exhaust gas distribution device is detachably mounted on a peripheral wall of a deposition and / or etching chamber of the deposition and / or etching apparatus.

[0028] In some embodiments, the portion of the exhaust gas distribution plate provided with the exhaust gas holes at least partially protrudes beyond the process table.

[0029] In some embodiments, the exhaust gas distribution plate of the exhaust gas distribution device at least partially surrounds and is spaced apart from the wafer to be etched, as viewed from above the wafer to be etched.

[0030] In some embodiments, the exhaust gas distribution plate of the exhaust gas distribution device is on the same level as the wafer to be etched.

[0031] In some embodiments, the wafer transfer port is on the same level as the exhaust gas distribution plate of the exhaust gas distribution device.

[0032] In some embodiments, the cutout of the exhaust gas distribution plate is arranged to be in line with the wafer transfer port of the deposition and / or etching chamber and thus forms a wafer transfer passage.

[0033] In some embodiments, the wafer transfer port and the exhaust port are arranged at opposite sides of the deposition and / or etching chamber. BRIEF DESCRIPTION OF DRAWINGS

[0034] The application is explained more fully with the help of embodiments and with reference to the drawings, but the application is not restricted to the embodiments described in the drawings and explained in detail below. The drawings are as follows:

[0035] Figure 1 is an exemplary side view of a deposition and / or etching apparatus.

[0036] Figure 2 is an exemplary side view of a deposition and / or etching apparatus according to the application.

[0037] Figure 3 is Figure 1 is an exemplary top view of the gas flow direction in a deposition and / or etching chamber of the deposition and / or etching apparatus of

[0038] Figure 4 is an exemplary side view of an exhaust gas distribution device according to the application.

[0039] Figure 5This is an exemplary top view of the airflow direction in the deposition and / or etching chamber of the deposition and / or etching apparatus according to the present invention.

[0040] Figure 6 It is to utilize Figure 1 A cross-sectional view of a wafer etched by a deposition and / or etching device.

[0041] Figure 7 It is to utilize Figure 1 A cross-sectional view of a wafer etched by a deposition and / or etching device. Detailed Implementation

[0042] The following describes illustrative embodiments of the exhaust distribution device 1, exhaust system 100, and deposition and / or etching apparatus 200 of the present invention. In this specification, various systems, structures, and devices are schematically depicted in the accompanying drawings for illustrative purposes only, and not all features of actual systems, structures, and devices are described. For example, well-known functions or structures are not described in detail to avoid unnecessary detail that could obscure the invention. It should be understood that in any practical application, many specific implementation decisions need to be made to achieve the specific goals of the developer or user, and system-related and industry-related limitations need to be followed. These specific goals may vary depending on the practical application. Furthermore, it should be understood that while such implementation decisions are complex and time-consuming, they are routine tasks for those skilled in the art who will benefit from the present invention.

[0043] The terms and phrases used herein should be understood and interpreted in accordance with the understanding of those skilled in the art. The consistent use of terms or phrases herein is not intended to imply a specific definition, i.e., a definition different from the common and conventional meaning understood by those skilled in the art. For terms or phrases intended to have a specific meaning, i.e., a meaning different from that understood by those skilled in the art, such specific definition will be explicitly listed in the specification, giving the specific definition of the term or phrase directly and unambiguously.

[0044] Unless otherwise required by the content, throughout the following description, the word “including” and its variations, such as “comprising” and “having”, will be interpreted in an open-ended, inclusive sense, that is, as “including but not limited to”.

[0045] Figure 1A prior deposition and / or etching apparatus 200' is shown. The deposition and / or etching apparatus 200' has a deposition and / or etching chamber 6'. The deposition and / or etching chamber 6' may, for example, have a substantially cylindrical peripheral wall. The deposition and / or etching apparatus 200' has a process stage 13' within the deposition and / or etching chamber 6', on which a wafer 15' to be deposited and / or etched, such as a silicon carbide wafer or a silicon wafer, can be transferred and placed. The process stage 13' may, for example, be an electrostatic chuck (ESC), which typically has an insulator and a base, wherein the wafer 15' to be deposited and / or etched can be transferred and placed on the insulator of the electrostatic chuck. An air inlet 17' may be provided on the upper part of the deposition and / or etching chamber 6', for example on the peripheral wall of the deposition and / or etching chamber 6', for introducing the reaction gas into the deposition and / or etching chamber 6'. The air inlet 17' may be, for example, an opening distributed around the peripheral wall of the deposition and / or etching chamber 6', for uniformly introducing the reaction gas into the deposition and / or etching chamber 6'.

[0046] See Figure 1 Above and below the process stage 13', the deposition and / or etching apparatus 200' also has at least two radio frequency (RF) power supplies 18' and 19', wherein at least one RF power supply (Source RF) 18' is used to generate and maintain plasma in the deposition and / or etching chamber 6', while at least another RF power supply (Bias RF) 19' is used to control the bombardment intensity and / or direction of high-energy particles in the deposition and / or etching chamber 6'.

[0047] See Figure 1 On the peripheral wall of the deposition and / or etching cavity 6' (in Figure 1 The deposition and / or etching apparatus 200' (located on the left peripheral wall section) may have a wafer transfer port 14'. Advantageously, the wafer transfer port 14' may be configured to be substantially flush with or slightly higher than the upper surface of the process stage 13' for placing wafers, thereby enabling efficient transfer of wafers 15' into or from the deposition and / or etching chamber 6'. It should be understood that the positional relationship between the wafer transfer port 14' and the upper surface of the process stage 13' can be flexibly configured. In some embodiments, the wafer transfer port 14' may also be configured significantly higher or lower than the upper surface of the process stage 13'.

[0048] See Figure 1The deposition and / or etching apparatus 200' also includes an exhaust system 100'. After the wafer 15' is deposited and / or etched, gases 7' that need to be exhausted are generated in the deposition and / or etching chamber 6', which typically include polymers. A suitable and uniformly deposited amount of polymer is beneficial during the deposition and / or etching process, but excess polymer needs to be exhausted along with the post-reaction gases 7'. The exhaust system 100' is configured to exhaust the post-reaction gases 7' along with excess polymer from the deposition and / or etching apparatus 200'. The exhaust system 100' may have an exhaust port 8', an exhaust channel 10', and an exhaust pump 11'. The exhaust port 8' is located on the peripheral wall of the deposition and / or etching chamber 6' on the side opposite to the wafer feed port 14'. The exhaust channel 10' leads via the exhaust port 8' to the deposition and / or etching chamber 6' of the deposition and / or etching apparatus 200'. See also Figure 1 And a more detailed illustration of the exhaust path Figure 3 The gas to be discharged 7' moves from the left to the right along the surface of the deposited and / or etched wafer 15' and enters the exhaust channel 10' from the exhaust port 8' on the right, and is discharged by means of the exhaust pump 11'.

[0049] exist Figure 1 In the deposition and / or etching apparatus 200' shown, the closer to the exhaust port 8', the easier it is for the polymer-containing gas 7' to be exhausted by the exhaust system 100'. Therefore, the portion of wafer 15' near the exhaust port 8' will deposit less polymer, while the portion of wafer 15' located in the middle or far from the exhaust port 8' will deposit more polymer. The less polymer deposited, the less protection the surface of wafer 15' receives, and the easier it is to etch the surface of wafer 15' in subsequent etching stages, thus leading to an uneven etched morphology on the etched wafer 15'.

[0050] See Figure 6 This diagram shows exemplary cross-sectional views of trenches at different locations on a wafer 15' after etching. The left cross-sectional view shows the trench at the center of wafer 15', while the right cross-sectional view shows the trench near the vent 8'. It can be seen that the trench at the center of wafer 15' is etched shallower due to the deposition of more polymer, while the trench near the vent 8' is etched deeper due to the deposition of less polymer. In experiments, under identical etching conditions, the depth of the trench at the center of wafer 15' is approximately 10649 Å, while the depth of the trench near the vent 8' is approximately 11407 Å, a difference of 760 Å.

[0051] Next, combine Figure 2An exemplary description of a deposition and / or etching apparatus 200 according to some embodiments of the present invention. The deposition and / or etching apparatus 200 according to the present invention has an exhaust system 100 according to the present invention. The exhaust system 100 according to the present invention, in addition to... Figure 1 In addition to the components shown, there are also components that need to be added. Figure 4 The exhaust distribution device 1 is shown in more detail below.

[0052] See Figure 4 According to the present invention, the exhaust distribution device 1 may have an exhaust distribution plate 2 and a shielding member 3, wherein the exhaust distribution plate 2 may have a plurality of exhaust holes 5.

[0053] The exhaust distribution plate 2 may have a semi-enclosed shape and therefore a notch 16. The exhaust distribution plate 2 may, for example, have an annular shape with the notch 16, as shown. Advantageously, the annular shape follows a circular ring shape except for the notch 16, thereby achieving a more symmetrical and balanced distribution. Alternatively, the exhaust distribution plate 2 may also have a U-shaped shape with the notch 16.

[0054] The semi-enclosed shape defines a receiving space for accommodating the wafer 15. That is, the wafer 15 can be arranged within the receiving space defined by the semi-enclosed shape without interfering with the position of the exhaust distribution plate 2. Therefore, the exhaust distribution plate 2 of the exhaust distribution device 1 at least partially surrounds the wafer 15 to be etched and is spaced apart from the wafer 15.

[0055] In the installed state, the shielding member 3 can be disposed at least partially along the outer edge of the exhaust distribution plate 2. The shape of the shielding member 3 can be adapted to the shape of the peripheral wall of the deposition and / or etching cavity 6 and thus abut against the peripheral wall of the deposition and / or etching cavity 6. For example, the shielding member 3 can be configured as or have a plate-like arcuate contour structure, the outer contour of which can be adapted to the inner contour of the peripheral wall to be abutted. In some embodiments, the exhaust distribution plate 2 can have one or more reinforcing ribs 9 for improving the rigidity of the exhaust distribution plate 2.

[0056] Combination Figure 2 and 4 The exhaust distribution device 1 can be installed in the deposition and / or etching chamber 6 of the deposition and / or etching apparatus 200.

[0057] In some embodiments, the exhaust distribution plate 2 and the shielding member 3 can be configured as separate components, which can be respectively installed in the deposition and / or etching chamber 6 of the deposition and / or etching apparatus 200. For example, the exhaust distribution plate 2 can be detachably installed on the process stage 13 (e.g., by force-locking, such as bolt connection or form-fitting, such as convex-concave connection), while the shielding member 3 can be detachably installed on the peripheral wall of the deposition and / or etching chamber 6 (e.g., by force-locking, such as bolt connection or form-fitting, such as convex-concave connection). To partially shield the exhaust port 8 of the deposition and / or etching chamber 6, the shielding member 3 can be installed on the peripheral wall section of the deposition and / or etching chamber 6 near the exhaust port 8. Therefore, the exhaust distribution device 1 or one of the exhaust distribution plate 2 and the shielding member 3 can be replaced as needed.

[0058] In other embodiments, the exhaust distribution plate 2 and the shielding member 3 may also be fixedly disposed (by means of material locking, such as welding or bonding) in the deposition and / or etching cavity 6.

[0059] Alternatively, the exhaust distribution plate 2 and the shielding member 3 may be pre-assembled components, for example, they may be pre-connected to each other by means of form fit, force lock and / or material lock, and at least one of them may be installed in the deposition and / or etching chamber 6 of the deposition and / or etching apparatus 200 by means of form fit, force lock and / or material lock. For example, the exhaust distribution plate 2 may be mounted on the process stage 13 and / or the shielding member 3 may be mounted on the peripheral wall of the deposition and / or etching chamber 6.

[0060] Alternatively, the exhaust distribution plate 2 and the shielding member 3 can also be integral components, particularly integrally molded components, and at least one of them can be mounted in the deposition and / or etching chamber 6 of the deposition and / or etching apparatus 200 by means of form fitting, force locking, and / or material locking. For example, the exhaust distribution plate 2 can be mounted on the process stage 13 and / or the shielding member 3 can be mounted on the peripheral wall of the deposition and / or etching chamber 6.

[0061] Advantageously, a sealing element 12 may also be provided between the edge of the exhaust port 8 and the shielding element 3, thereby improving the shielding effect.

[0062] See Figure 2The wafer transfer port 14 and the exhaust port 8 of the deposition and / or etching chamber 6 can be located on opposite sides of the deposition and / or etching chamber 6. In some embodiments, for ease of transfer, the wafer transfer port 14, the exhaust distribution plate 2, and the upper surface of the process stage for placing the wafer 15 to be etched can be substantially on the same horizontal plane. It should be understood that the positional relationship between the wafer transfer port 14, the exhaust distribution plate 2, and the upper surface of the process stage for placing the wafer 15 to be etched can be flexibly configured. The notch 16 of the exhaust distribution plate 2 can be configured to communicate with the wafer transfer port 14 of the deposition and / or etching chamber 6, thus forming a wafer transfer path.

[0063] See Figure 2 In the installed state of the exhaust distribution device 1, the shielding member 3 can extend upward from the exhaust distribution plate 2 at least partially, especially extending upward substantially perpendicular to the exhaust distribution plate 2. The shielding member 3 can thus at least shield the portion of the exhaust port 8 located above the exhaust distribution plate 2. Therefore, due to the shielding of the shielding member 3, the gas 7 to be discharged can be largely guided downward first through the exhaust hole 5 on the exhaust distribution plate 2 of the exhaust distribution device 1, and then guided below the exhaust distribution plate 2 to the portion of the exhaust port 8 located below the exhaust distribution plate 2, and further guided from the exhaust port 8 into the exhaust passage 10.

[0064] In addition, alternatives are available in Figure 2 In the embodiment shown, the shielding member 3 can also partially shield the portion of the exhaust port 8 located below the exhaust distribution plate 2, as long as the gas 7 to be discharged can still be discharged from the exhaust port 8.

[0065] Advantageously, the portion of the exhaust distribution plate 2 with the exhaust port 5 can extend at least partially beyond the process table 13. Therefore, the gas 7 to be discharged can be guided downward from the exhaust port 5 of the exhaust distribution plate 2, and then guided along the outer circumference of the process table 13 to the exhaust port 8.

[0066] In some embodiments, see Figure 5 The exhaust distribution plate 2 has a plurality of exhaust holes 5 that can be evenly distributed on it. Alternatively or additionally, the diameter of each of the exhaust holes 5 can be the same. Therefore, the gas 7 to be discharged can be uniformly guided downward through the exhaust holes 5 on the exhaust distribution plate 2, and the polymer contained in the gas 7 to be discharged is thus uniformly deposited on the wafer 15.

[0067] See Figure 7The diagram shows cross-sectional views of trenches at different locations on a wafer 15 etched using the deposition and / or etching apparatus 200 according to the invention. Due to the uniformly deposited polymer, the surface of the wafer 15 is protected to a substantially equal degree, resulting in substantially equal etching at the center of the wafer 15 and near the exhaust port 8, thus leading to a uniform etched morphology on the etched wafer 15. In experiments, under identical etching conditions, the trench depth at the center of the wafer 15 was approximately 10110 Å, while the trench depth near the exhaust port 8 was approximately 10089 Å, a difference of 80 Å. Therefore, a significantly more uniform etched morphology on the wafer 15 is achieved compared to that fabricated using the prior deposition and / or etching apparatus 200'.

[0068] In some embodiments, the exhaust distribution plate 2 may have multiple sub-regions, and the number, density, and / or aperture size of the exhaust holes 5 on the multiple sub-regions may differ. Therefore, in such cases, the amount of polymer deposited in a specific region on the wafer 15 can be preset as needed, thereby allowing the trench etching depth at different local areas of the wafer 15 to be set as required. In some embodiments, the exhaust distribution plate 2 may have a first sub-region and a second sub-region, wherein the number, density, and / or aperture of the exhaust holes 5 on the first sub-region may be greater than that on the second sub-region. Thus, the trench etching depth of the first sub-region may be higher than that of the second sub-region. Therefore, the main technical effects that can be achieved by the exhaust distribution device 1, the exhaust system 100, and the deposition and / or etching equipment 200 according to different embodiments of the present invention include, but are not limited to, at least one of the following:

[0069] 1) The exhaust distribution device 1 can change the direction of the gas 7 to be discharged, so that the direction of the gas 7 to be discharged will not affect the uniformity of polymer deposition, and thus affect the uniformity of the depth of the etched trench.

[0070] 2) Existing deposition and / or etching equipment 200 can be modified using exhaust distribution device 1 to change the direction of the gas 7 to be discharged in deposition and / or etching equipment 200.

[0071] 3) The requirements for etching different wafers 15 can be adapted by replacing the exhaust distribution device 1.

[0072] 4) Cost-effective equipment improvements are achieved by adding / modifying existing equipment.

[0073] Finally, it should be noted that the above embodiments are merely for understanding and explaining the present invention, and do not constitute a limitation on the scope of protection of the present invention. Those skilled in the art can make modifications based on the above embodiments, and all such modifications do not depart from the scope of protection of the present invention.

Claims

1. An exhaust distribution device (1), said exhaust distribution device (1) being used to guide the exhaust direction of the gas (7) to be discharged in the deposition and / or etching chamber (6) of a deposition and / or etching apparatus (200), characterized in that, The exhaust distribution device (1) has an exhaust distribution plate (2) and a shielding member (3), wherein the exhaust distribution plate (2) has a semi-enclosed shape and therefore has a notch (16), and a plurality of exhaust holes (5) are provided on the exhaust distribution plate (2), wherein, when the exhaust distribution device (1) is located in the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200), the shielding member (3) is configured to at least shield the exhaust ports (8) of the deposition and / or etching chamber (6) above the exhaust distribution plate (2). In one part, the shield (3) of the exhaust distribution device (1) is detachably mounted on the peripheral wall section of the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200) near the exhaust port (8), such that the gas (7) to be discharged can first be guided downward through the exhaust hole (5) on the exhaust distribution device (1), and then guided below the exhaust distribution plate (2) to the portion of the exhaust port (8) located below the exhaust distribution plate (2), and further guided from the exhaust port (8) into the exhaust passage (10).

2. The exhaust distribution device (1) according to claim 1, characterized in that, When the exhaust distribution device (1) is located in the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200), the shielding member (3) also partially shields the portion of the exhaust port (8) of the deposition and / or etching chamber (6) located below the exhaust distribution plate (2).

3. The exhaust distribution device (1) according to claim 1, characterized in that, The exhaust distribution plate (2) and the shield (3) are connected to each other at the edge of the exhaust distribution plate (2) by means of shape fit, force lock and / or material lock.

4. The exhaust distribution device (1) according to claim 1, characterized in that, The exhaust distribution plate (2) and the shield (3) are one-piece components.

5. The exhaust distribution device (1) according to claim 1, characterized in that, The exhaust distribution plate (2) has an annular shape with a notch (16), wherein the annular shape follows the shape of a circle except for the notch (16).

6. The exhaust distribution device (1) according to claim 1, characterized in that, The exhaust distribution plate (2) has a U-shaped shape with a notch (16).

7. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, At least a portion of the shield (3) is disposed along the outer edge of the exhaust distribution plate (2), and / or the shape of the shield (3) is adapted to the shape of the peripheral wall of the deposition and / or etching cavity (6) in which it is located.

8. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The notch (16) and the shield (3) are located on opposite sides of the exhaust distribution device (1).

9. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The plurality of exhaust holes (5) are evenly distributed on the exhaust distribution plate (2), and / or the diameter of each exhaust hole (5) is the same.

10. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The exhaust distribution plate (2) has multiple sub-regions, and the exhaust holes (5) on the multiple sub-regions are different in terms of the number, density and / or aperture size of the exhaust holes (5).

11. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The exhaust distribution plate (2) has reinforcing ribs (9).

12. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The semi-enclosed shape of the exhaust distribution plate (2) defines a receiving space for accommodating the wafer (15).

13. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, When the exhaust distribution device (1) is located in the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200), the notch (16) of the exhaust distribution plate (2) is configured to communicate with the wafer transfer port (14) of the deposition and / or etching chamber (6) and thus form a wafer transfer path.

14. The exhaust distribution device (1) according to any one of claims 1 to 6, characterized in that, The exhaust distribution plate (2) and / or the shield (3) have fastening devices for removably securing them in the deposition and / or etching cavity (6).

15. An exhaust system (100) for a deposition and / or etching apparatus, characterized in that, The exhaust system (100) has an exhaust distribution device (1) according to any one of claims 1 to 14, an exhaust passage (10) downstream of the exhaust distribution device (1), and an exhaust pump (11), wherein the exhaust passage (10) is connected to the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200) through an exhaust port (8), and the shielding member (3) is used to at least shield the portion of the exhaust port (8) of the deposition and / or etching chamber (6) above the exhaust distribution plate (2), so that when the exhaust pump (11) is running, the gas (7) to be discharged can be first guided downward through the exhaust hole (5) on the exhaust distribution device (1), and then guided below the exhaust distribution plate (2) to the portion of the exhaust port (8) below the exhaust distribution plate (2), and further guided from the exhaust port (8) into the exhaust passage (10).

16. The venting system (100) for a deposition and / or etching apparatus according to claim 15, characterized in that, The shield (3) is fastened to the edge of the vent (8) of the deposition and / or etching cavity (6) by means of shape fit, force lock and / or material lock.

17. The venting system (100) for a deposition and / or etching apparatus according to claim 15 or 16, characterized in that, A seal (12) is provided between the shield (3) and the edge of the vent (8) of the deposition and / or etching cavity (6).

18. A deposition and / or etching apparatus (200), characterized in that, The deposition and / or etching apparatus (200) has an exhaust system (100) for the deposition and / or etching apparatus according to any one of claims 15 to 17, wherein the deposition and / or etching apparatus (200) has a process stage (13), and the deposition and / or etching chamber (6) of the deposition and / or etching apparatus (200) has a wafer transfer port (14), wherein the exhaust distribution plate (2) of the exhaust distribution device (1) and the wafer (15) to be etched are both disposed on the process stage (13).

19. The deposition and / or etching apparatus (200) according to claim 18, characterized in that, The exhaust distribution plate (2) of the exhaust distribution device (1) is detachably mounted on the process stage (13) of the deposition and / or etching equipment (200).

20. The deposition and / or etching apparatus (200) according to claim 18, characterized in that, The shield (3) of the exhaust distribution device (1) is detachably mounted on the peripheral wall of the deposition and / or etching chamber (6) of the deposition and / or etching equipment (200).

21. The deposition and / or etching apparatus (200) according to claim 18, characterized in that, The portion of the exhaust distribution plate (2) with exhaust holes (5) extends at least partially beyond the process table (13).

22. The deposition and / or etching apparatus (200) according to any one of claims 18 to 21, characterized in that, Viewed from above the wafer (15) to be etched, the exhaust distribution plate (2) of the exhaust distribution device (1) at least partially surrounds the wafer (15) to be etched and is spaced apart from the wafer (15).

23. The deposition and / or etching apparatus (200) according to any one of claims 18 to 21, characterized in that, The exhaust distribution plate (2) of the exhaust distribution device (1) is on the same horizontal plane as the wafer (15) to be etched.

24. The deposition and / or etching apparatus (200) according to claim 23, characterized in that, The wafer transfer port (14) and the exhaust distribution plate (2) of the exhaust distribution device (1) are on the same horizontal plane.

25. The deposition and / or etching apparatus (200) according to claim 24, characterized in that, The notch (16) of the exhaust distribution plate (2) is configured to communicate with the wafer transfer port (14) of the deposition and / or etching cavity (6) and thus form a wafer transfer path.

26. The deposition and / or etching apparatus (200) according to any one of claims 18 to 21, characterized in that, The wafer transfer port (14) and the exhaust port (8) are located on opposite sides of the deposition and / or etching cavity (6).

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