Line width adjustment method and conductive material

Abstract

The application belongs to the technical field of semiconductor manufacturing, and relates to a line width adjusting method and conductive material. A first substrate is processed to obtain a first line pattern; the first line pattern is measured to obtain a first line width distribution diagram; the line width uniformity of the first line width distribution diagram is inspected; if the line width uniformity does not meet a preset range, a loop process is executed until a preset condition is met, the loop process includes regionally adjusting the height of a nozzle; the second substrate is processed according to the height of the adjusted nozzle to obtain a second line pattern; the second line pattern is measured to obtain a second line width distribution diagram; and the line width uniformity of the second line width distribution diagram is inspected. The etching effect of different regions is accurately controlled to make the line width of the line of the conductive material uniform and consistent, thereby being beneficial to the manufacturing of high-precision electronic devices.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, specifically relating to a linewidth adjustment method and a conductive material. Background Technology

[0002] In traditional photolithography's wet processing steps (such as circuit development or etching), a "pool effect" often occurs. This effect causes the linewidth of conductive material's edge lines to be narrower than that of the lines in the center, affecting the uniformity of linewidth across the entire sheet. This uneven linewidth distribution makes thicker lines appear darker, while thinner lines appear lighter, potentially resulting in color differences and shadows in the overall appearance, thus affecting the material's aesthetics. This problem is particularly pronounced in the fabrication of transparent electrodes, where linewidth inhomogeneity leads to differences in resistance values ​​across different areas of the material, adversely affecting the performance stability of the final device. Summary of the Invention

[0003] This application provides a linewidth adjustment method and a conductive material that can solve the problem of uneven linewidth caused by the pool effect in wet processing, so as to accurately adjust the etching degree of different areas.

[0004] In a first aspect, embodiments of this application provide a linewidth adjustment method applied to an etching machine, the etching machine including a nozzle. The method includes: processing a first substrate to obtain a first circuit pattern; measuring the first circuit pattern to obtain a first linewidth distribution map; performing a linewidth uniformity check on the first linewidth distribution map; if the linewidth uniformity does not meet a preset range, performing a cyclic process until a preset condition is met, the cyclic process including: regionally adjusting the height of the nozzle; processing a second substrate according to the adjusted nozzle height to obtain a second circuit pattern; performing the measurement process on the second circuit pattern to obtain a second linewidth distribution map; and performing the linewidth uniformity check on the second linewidth distribution map; wherein the preset condition is that the linewidth uniformity meets the preset range, and the first substrate and the second substrate are substrates of the same type.

[0005] In some embodiments, processing the first substrate to obtain the first circuit pattern includes: uniformly coating photoresist on the surface of the first substrate and stabilizing the photoresist on the surface of the first substrate by pre-drying; exposing the surface of the first substrate through a photomask to form a pattern; developing the exposed surface of the first substrate to reveal the pattern; and sequentially etching and stripping the developed surface of the first substrate to obtain the first circuit pattern.

[0006] In some embodiments, the measurement processing of the first line pattern to obtain a first line width distribution map includes: taking the edge and middle areas of the first line pattern as target measurement areas; performing multi-point measurements on the target measurement areas to obtain line width data for each point; and analyzing and processing the line width data for each point to obtain the first line width distribution map.

[0007] In some embodiments, the linewidth uniformity test of the first linewidth distribution map includes: calculating the range based on the first linewidth distribution map to obtain the range; calculating the average linewidth based on the first linewidth distribution map to obtain the average linewidth; calculating the standard deviation based on the average linewidth and the first linewidth distribution map to obtain the standard deviation; comparing the standard deviation and the range with the preset range to determine whether the standard deviation and the range meet the preset range.

[0008] In some embodiments, the preset range includes: the standard deviation being less than 5% to 10% of the preset line width, and the range being less than 10% to 15% of the preset line width.

[0009] In some embodiments, the nozzles include a plurality of nozzles arranged in a square positional distribution. The regional adjustment of the height of the nozzles includes: fixing the middle nozzle of the nozzles and dividing the nozzles arranged in a square positional distribution into a plurality of regions based on the position of the middle nozzle; moving the nozzles in each region upward along the Z-axis direction by a first preset distance; or moving the nozzles in each region downward along the Z-axis direction by a second preset distance.

[0010] In some embodiments, the range corresponding to the first preset distance is: 5cm≤S1≤7cm; where S1 is the first preset distance.

[0011] In some embodiments, the range corresponding to the second preset distance is: 2cm≤S2≤4cm; where S2 is the second preset distance.

[0012] Secondly, embodiments of this application provide a conductive material, which is obtained by the linewidth adjustment method described in the first aspect above.

[0013] In this embodiment, a first circuit pattern is obtained by processing a first substrate; a first linewidth distribution map is obtained by measuring the first circuit pattern; the linewidth uniformity of the first linewidth distribution map is checked, and if the linewidth uniformity does not meet a preset range, a cyclic process is executed until the preset condition is met. The cyclic process includes: regionally adjusting the height of the nozzle; processing a second substrate according to the adjusted nozzle height to obtain a second circuit pattern; measuring the second circuit pattern to obtain a second linewidth distribution map; and checking the linewidth uniformity of the second linewidth distribution map. During the wet etching process, by repeatedly adjusting the height of the nozzles in different areas, the etching solution sprayed from the nozzles is uniformly distributed throughout the etching process, while ensuring that the etching effect in different areas is consistent with that in the central area. By precisely controlling the etching effect in different areas, the linewidth of the conductive material circuit is made uniform, which is beneficial for the fabrication of high-precision electronic devices. Attached Figure Description

[0014] Figure 1 This is a flowchart of a line width adjustment method provided in an embodiment of this application;

[0015] Figure 2 This is a flowchart of the processing provided in the embodiments of this application;

[0016] Figure 3 This is a flowchart of the measurement process provided in the embodiments of this application. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and thoroughly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0018] The technical features involved in the various embodiments of this application described below do not conflict with each other and can be combined with each other.

[0019] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and are not limited in number; for example, a first object can be one or more.

[0020] Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following related objects are in an "or" relationship.

[0021] Please see Figure 1 , Figure 1 This is a flowchart of a line width adjustment method provided in an embodiment of this application. Figure 1 As shown, the method is applied to an etching machine, which includes a nozzle, and the method includes steps S101-S103:

[0022] S101: Process the first substrate to obtain the first circuit pattern.

[0023] First, select the type of the first substrate, such as PET, PI, FR4, COP, CPI, glass, silicon substrate, etc., and ensure that its surface is clean and dust-free. The first substrate is usually coated with a conductive layer (such as copper, silver, gold, graphene, ITO, or an organic conductive layer).

[0024] Please see Figure 2 , Figure 2 This is a flowchart of the processing provided in the embodiments of this application. For example... Figure 2 As shown, the first substrate is processed to obtain the first circuit pattern, including steps S1011-S1014:

[0025] S1011: Photoresist is uniformly coated on the surface of the first substrate, and the photoresist is stabilized on the surface of the first substrate by pre-drying treatment.

[0026] When coating the surface of the first substrate, different coating methods can be chosen. Understandably, if liquid photoresist, such as photoresist (photosensitive adhesive), is used, it is uniformly coated onto the surface of the first substrate using a spin coating method. The spin coating speed and time need to be adjusted according to the viscosity of the photoresist and the target film thickness. If dry film photoresist, such as photosensitive film, is used, it is laminated onto the surface of the first substrate. The lamination temperature is typically controlled between 80-120℃ to ensure the photosensitive film adheres uniformly to the substrate without bubbles or defects.

[0027] The first substrate after coating is pre-dried to remove solvent from the photoresist and cure the film. The temperature is generally controlled between 80-120℃, and the specific time depends on the film thickness and material properties.

[0028] S1012: Expose the surface of the first substrate using a photomask to form a pattern.

[0029] The first substrate coated with a photosensitive film or photosensitive emulsion is placed on the exposure machine, and the photomask is aligned with the pattern on the first substrate. The exposure energy is set according to the selected photosensitive material, typically around 20 mJ / cm². 2 ~1000mj / cm 2 Within the range. During exposure, ultraviolet light shines through the transparent part of the photomask onto the photosensitive material on the first substrate, causing chemical changes in these areas.

[0030] After exposure, a post-baking process is performed. This step helps to further cure the photosensitive material, improving the resolution and stability of the pattern. The temperature and time also need to be adjusted according to the material.

[0031] S1013: The surface of the first substrate after exposure is developed to reveal the pattern.

[0032] The first substrate, after exposure, is placed in a developer solution, usually an alkaline solution (such as NaOH or KOH solution). The developer dissolves the unexposed or insufficiently cured photosensitive material. The development time is generally 5 seconds to 5 minutes, and the development temperature is controlled between 10℃ and 60℃. After development, only the exposed and cured pattern remains on the surface of the first substrate.

[0033] S1014: The surface of the first substrate after development is sequentially etched and stripped to obtain the first circuit pattern.

[0034] After development, the first substrate is immersed in the etching solution. The etching solution removes the conductive layer not protected by the photosensitive material, leaving the exposed pattern area. Commonly used etching solutions are acidic or alkaline, depending on the properties of the conductive material (first substrate). The etching time and temperature need to be controlled according to the selection of the conductive material and the etching solution.

[0035] After etching, the remaining photosensitive material is removed using a stripping agent or organic solvent. This process is typically carried out at a relatively low temperature (10°C to 60°C) for between 5 seconds and 5 minutes. After stripping, the final conductive pattern, i.e., the first circuit pattern, will be revealed on the substrate.

[0036] In addition, the first substrate is cleaned to remove residual chemicals and then dried. This ensures the surface of the first substrate is clean and ready for subsequent processing or application.

[0037] S102: The first line pattern is measured and processed to obtain the first line width distribution map.

[0038] Please see Figure 3 , Figure 3 This is a flowchart of the measurement process provided in an embodiment of this application. For example... Figure 3As shown, the first line pattern is measured and processed to obtain a first line width distribution map, including steps S1021-S1023:

[0039] S1021: The edge and middle areas of the first line pattern are taken as the target measurement area.

[0040] First, before performing the measurement process, select appropriate measurement equipment. For example, the measurement equipment can be an optical microscope: used for preliminary observation of the morphology of the circuit and rough measurement; a scanning electron microscope (SEM): used for high-resolution measurement, suitable for micron-level or even nanometer-level circuit measurement; a laser thickness gauge: used for non-contact measurement, suitable for large-area, high-precision linewidth measurement; and an automated optical inspection (AOI) instrument: which can automatically scan the entire material to detect the linewidth and uniformity of the circuit.

[0041] Secondly, to accurately assess the linewidth uniformity of the first circuit pattern, multiple measurement points need to be selected. These measurement points are typically distributed as follows: the material center: to understand the linewidth in the central area; the material edge: to assess linewidth variations in the edge areas; the four corners of the material: to check the linewidth in the corner areas and ensure no anomalies are found; and the middle area of ​​the material: these areas are transitional zones between the center and the edges, which can help understand the trend of linewidth variation. It should be noted that this application does not limit the selection of the target measurement area, as long as it conforms to the manufacturing process. Furthermore, depending on the size and complexity of the material, typically 10 to several dozen measurement points are selected to obtain statistically significant linewidth data.

[0042] S1022: Perform multi-point measurements on the target measurement area to obtain the line width data of each point.

[0043] First, use measuring equipment to precisely locate each measurement point and adjust the focus or parameters to obtain a clear image. Second, at each measurement point, use the measuring equipment's measurement function to directly measure the line width. Multiple measurements are typically taken and the average value is calculated to reduce random errors. Finally, record the line width data for each measurement point and carefully label the location of each point.

[0044] S1023: Analyze and process the line width data of each point to obtain the first line width distribution map.

[0045] Based on the line width data obtained in step S1022, it is recorded in a table, with the measurement location (edge ​​or middle) and the corresponding line width value marked, thus obtaining the first line width distribution map. Multiple measurements are required to ensure the repeatability and reliability of the data.

[0046] S103: Perform a linewidth uniformity check on the first linewidth distribution map. If the linewidth uniformity does not meet the preset range, execute a loop process until the preset condition is met. The loop process includes: regionally adjusting the height of the nozzle; performing the processing on the second substrate according to the adjusted nozzle height to obtain a second circuit pattern; performing the measurement processing on the second circuit pattern to obtain a second linewidth distribution map; and performing the linewidth uniformity check on the second linewidth distribution map. The preset condition is that the linewidth uniformity meets the preset range, and the first substrate and the second substrate are of the same type.

[0047] First, the line width uniformity check of the first line width distribution map includes:

[0048] Based on the first line width distribution map, the range is calculated to obtain the range;

[0049] Based on the first line width distribution map, the average line width is calculated to obtain the average line width;

[0050] Based on the average line width and the first line width distribution map, the standard deviation is calculated to obtain the standard deviation;

[0051] The standard deviation and the range are compared with the preset range to determine whether the standard deviation and the range meet the preset range.

[0052] Understandably, the range is calculated based on the first linewidth distribution map. The range calculation formula is as follows:

[0053] R = W max -W min ;

[0054] The range R is the difference between the maximum and minimum line widths, representing the range of line width distribution. A smaller range R indicates that the line width does not vary much between measurement points, indicating good uniformity.

[0055] Based on the first line width distribution map, the average line width is calculated to obtain the average line width. The formula for calculating the average line width is as follows:

[0056]

[0057] in, It is the average line width, w i is the line width of the i-th measurement point, and N is the total number of measurement points.

[0058] Based on the average line width and the first line width distribution map, the standard deviation is calculated to obtain the standard deviation. The formula for calculating the standard deviation is as follows:

[0059]

[0060] The standard deviation σ reflects the dispersion of the line width; the smaller the value, the more uniform the line width.

[0061] The standard deviation and the range are compared with the preset range to determine whether the standard deviation and the range meet the preset range. The preset range includes: the standard deviation being less than 5% to 10% of the preset linewidth, and the range being less than 10% to 15% of the preset linewidth. It is understood that the preset linewidth, in the design phase of integrated circuits or microelectronic devices, refers to the width of the conductors or electrodes in the circuit pattern, which is the ideal size that the photolithography process aims to achieve. For example, if the preset linewidth is 1 μm, then the allowable standard deviation is typically between 0.05 μm and 0.1 μm. It should be noted that for higher precision applications, such as advanced integrated circuit manufacturing, the standard deviation requirement may be more stringent, generally requiring it to be less than the preset linewidth by 3% to 5%. For example, assuming the preset linewidth is 1 μm, then the range should typically be controlled within 0.1 μm to 0.15 μm. It should be noted that in some high-precision processes, the range may be required to be between 5% and 10%.

[0062] Secondly, the nozzles include multiple nozzles arranged in a square distribution. The regional adjustment of the nozzle height includes: fixing the middle nozzle and dividing the square-distributed nozzles into multiple regions based on the position of the middle nozzle; moving the nozzles in each region upward along the Z-axis by a first preset distance; or moving the nozzles in each region downward along the Z-axis by a second preset distance.

[0063] Understandably, the central nozzle of the nozzle distribution is selected as the reference nozzle to ensure its position and height remain constant. This nozzle's height and position will serve as a reference point for adjusting the height of other nozzles. Based on the square distribution of the nozzles, the nozzle area is divided into multiple sub-regions. These sub-regions can be divided into square grids, with each sub-region containing one or more nozzles. This division allows for individual height adjustments for different regions to achieve the desired etching effect. For regions requiring reduced etching intensity (such as edge regions), the nozzles in these regions are moved upwards along the Z-axis by a first preset distance (S1), ranging from 5cm to 7cm. Moving the nozzles upwards increases the distance between the nozzles and the substrate, reducing the impact force of the liquid and thus reducing etching capacity. This prevents over-etching in edge regions and helps maintain linewidth uniformity. For regions requiring increased etching intensity (such as the middle region), the nozzles in these regions are moved downwards along the Z-axis by a second preset distance (S2), ranging from 2cm to 4cm. Here, Z represents the vertical movement of the nozzle in three-dimensional space. In a three-dimensional coordinate system, there are typically three axes: X-axis: the horizontal axis, usually representing the left-right direction; Y-axis: the horizontal axis perpendicular to the X-axis, usually representing the front-back direction; Z-axis: the axis perpendicular to both the X and Y axes, usually representing the up-down direction. Moving the nozzle downwards shortens the distance between the nozzle and the substrate, increasing the impact force of the liquid and thus increasing the etching capability. This ensures that the etching intensity in the central area remains consistent with that in the edge areas.

[0064] It should be noted that regarding the setting of the first preset distance, a larger nozzle height adjustment distance (5cm to 7cm) is mainly used to reduce the impact force of the nozzle on the substrate. This is because at a higher nozzle position, the flow rate and impact force of the developer or etchant are reduced, thereby reducing the etching effect on the substrate and helping to maintain the uniformity of line width, especially in the edge areas where over-etching is prone to occur. Additionally, it can reduce the etching depth, preventing the line width from becoming thinner in the edge areas, thus improving the overall quality of the final pattern. Regarding the setting of the second preset distance, a smaller nozzle height adjustment distance (2cm to 4cm) is mainly used to increase the impact force of the nozzle on the substrate. A smaller distance allows the developer or etchant to be sprayed more concentratedly onto the substrate, increasing the etching intensity and ensuring that the etching intensity in the middle area is consistent with that in the edge area, thus forming a uniform etching effect across the entire substrate. By controlling the nozzle height, the etching effect in the middle area can be precisely adjusted, ensuring the accuracy and consistency of the pattern. Finally, regarding the setting of fixing the middle nozzle as the reference, it is also possible to use nozzles in other areas as the reference; this is not limited here.

[0065] The working principle of the line width adjustment method provided in this application embodiment is as follows:

[0066] First, the first substrate is processed through coating, exposure, development, etching, and stripping operations to obtain a first circuit pattern. Second, after obtaining the first circuit pattern, it is measured to obtain a first linewidth distribution map. Third, based on the first linewidth distribution map, its linewidth uniformity is checked. If the linewidth uniformity meets a preset range, it indicates that no regional adjustment of the nozzles is needed, and mass production can proceed directly. If the linewidth uniformity does not meet the preset range, it indicates that regional adjustment of the nozzles is needed. The following cyclic process is then executed until the preset conditions are met. This cyclic process includes: regionally adjusting the height of the nozzles (see the above description of regional adjustment for details). It is understood that adjusting the nozzles at the corresponding positions in edge areas with linewidth differences results in finer edge linewidths, indicating stronger edge etching capability. Moving the nozzles at the edges upwards increases the distance between them and the material, reducing the impact of the etching solution on the material and thus reducing its etching capability. After adjustment, the second substrate is processed according to the adjusted nozzle height to obtain a second circuit pattern. It is understood that the first substrate and the second substrate are of the same type, i.e., the material remaining after the previous photosensitive film is applied and exposed is placed in a pre-adjusted wet processing equipment for development, etching, and film removal, with parameters consistent with the first test sample. Subsequently, the second circuit pattern is measured according to the aforementioned measurement process to obtain a second linewidth distribution map. Next, the linewidth uniformity of the second linewidth distribution map is checked to determine whether the linewidth uniformity meets the preset range. The preset range includes: the standard deviation being less than 5% to 10% of the preset linewidth, and the range being less than 10% to 15% of the preset linewidth. It is understood that after each processing step, a linewidth uniformity check is required after measuring the linewidth of the substrate. If the preset conditions are met, it indicates that no regional adjustment of the nozzles is needed, and mass production can proceed directly. If the linewidth uniformity does not meet the preset range, it indicates that regional adjustment of the nozzles is required, and the above cyclic process continues until the preset conditions are met.

[0067] This application embodiment adjusts the etching capability of different areas by precisely adjusting the height of the nozzles in different areas, thereby reducing the impact of uneven linewidth caused by the pool effect. It can precisely adjust the etching capability of different areas, which is beneficial to industrial manufacturing.

[0068] This application also provides a conductive material, which is obtained by the linewidth adjustment method described above.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; under the concept of the present invention, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the present invention as described above, which are not provided in detail for the sake of brevity; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A line width adjustment method applied to an etching machine, the etching machine comprising a nozzle, characterized in that, The method comprises: processing a first substrate to obtain a first circuit pattern; measuring the first circuit pattern to obtain a first line width distribution map; performing line width uniformity inspection on the first line width distribution map, and if the line width uniformity does not meet a preset range, performing a loop process until a preset condition is met, the loop process comprising: regionally adjusting the height of the nozzle; processing a second substrate according to the adjusted height of the nozzle to obtain a second circuit pattern; measuring the second circuit pattern to obtain a second line width distribution map; performing line width uniformity inspection on the second line width distribution map; wherein the preset condition is that the line width uniformity meets the preset range, and the first substrate and the second substrate are substrates of the same type; wherein the line width uniformity inspection on the first line width distribution map comprises: performing range calculation according to the first line width distribution map to obtain a range; performing average line width calculation according to the first line width distribution map to obtain an average line width; performing standard deviation calculation according to the average line width and the first line width distribution map to obtain a standard deviation; comparing the standard deviation, the range and the preset range to determine whether the standard deviation and the range meet the preset range; wherein the preset range comprises that the standard deviation is less than 5% to 10% of a preset line width, and the range is less than 10% to 15% of the preset line width.

2. The line width adjustment method according to claim 1, wherein The processing of the first substrate to obtain the first circuit pattern comprises: uniformly applying a photoresist on the surface of the first substrate, and stabilizing the photoresist on the surface of the first substrate through pre-baking treatment; exposing the surface of the first substrate through a photomask to form a pattern; developing the surface of the first substrate after exposure to visualize the pattern; sequentially performing etching treatment and film stripping treatment on the surface of the first substrate after development to obtain the first circuit pattern.

3. The line width adjustment method according to claim 1, wherein The measurement of the first circuit pattern to obtain the first line width distribution map comprises: taking the edge and the middle region of the first circuit pattern as a target measurement region; performing multi-point measurement on the target measurement region to obtain line width data of each point; analyzing and processing the line width data of each point to obtain the first line width distribution map.

4. The line width adjustment method according to claim 1, wherein The nozzle comprises a plurality of nozzles arranged in a square position distribution, and the regionally adjusting the height of the nozzle comprises: fixing a middle nozzle of the nozzles, and dividing the nozzles arranged in the square position distribution into multiple regions based on the position of the middle nozzle; moving the nozzles in each region upward by a first preset distance along the Z-axis direction; or moving the nozzles in each region downward by a second preset distance along the Z-axis direction.

5. The line width adjustment method according to claim 4, wherein The range corresponding to the first preset distance is: ; The first preset distance is the distance between the first point and the second point. is the first preset distance.

6. The line width adjustment method according to claim 4, wherein The range corresponding to the second preset distance is: ; The second preset distance is the distance between the first preset distance and the third preset distance. is the second preset distance.

7. An electrically conductive material, characterized by The conductive material is obtained by the line width adjustment method according to any one of claims 1 to 6.

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